US1A 快速恢复二极管原厂DCY品牌推荐
防反二极管十大品牌
防反二极管十大品牌1、ABBABB集团（阿西布朗勃法瑞）于1988年由瑞典ASEA 公司和瑞士BBC Brown Boveri公司合并而成，是一个业务遍及全球的电气工程集团，ABB是电力和自动化技术领域的全球领先公司，致力于为工业和电力行业客户提供解决方案，以帮助客户提高业绩，同时降低对环境的不良影响。
ABB集团的业务遍布全球100多个国家，拥有107,000名员工。
为全球100多个国家的顾客提供服务。
ABB集团超过一半的营业额来自欧洲市场；近四分之一来自亚洲、中东和非洲；五分之一强来自南北美洲市场。
2、IR国际整流器ＩＲ公司是ＩｎｔｅｒｎａｔｉｏｎａｌＲｅｃｔｉｆｉｅｒ（国际整流器公司）的缩写。
ＩＲ公司成立于１９４７年，是世界上具有悠久历史的半导体公司。
该公司从生产整流器开始而得名并逐步闻名世界，目前是世界上最主要的功率半导体器件公司。
该公司目前年销售额６～７亿美元3、赛米控SEMIKRON INTERNATIONAL GmbH由FritzMartin博士创建于1951年，是一过3000名员工，是财政独立的家族式企业。
赛米控在全球共有37家子公司，在德国、巴西、中国、法国、印度、意大利、韩国、斯洛伐克、南非和美国分别设4、西整所西安电力电子技术研究所, 原隶属于国家机械工业部，成立于1999年，是我国在电力电子行业领域的技术归口研究所，是本行业的全国学会、协会、国家重要核心期刊、国际IEC T42专委会和全国电力电子学标准化技术委员会秘书处所在地，国家电力电子产品质量监督检验中心挂靠单位。
是我国唯一一所从事电力半导体器件工艺技术、变流技术研究的专业研究所。
研究所目前主要致力于5000A/8500V 及以下电力半导体分立器件、电力电子变流装置及电力半导体器件测试技术和设备的设计、开发生产和服务。
研究所以超（特）大功率电力电子器件以及新型电力电子器件的工艺技术及电力电子变流应用技术研究为未来的发展核心。
防反二极管十大厂商
防反二极管十大国际品牌1、IR国际整流器国际整流器公司(简称IR) 是全世界功率半导体和治理方案领导厂商。
IR 的模拟及混合信号集成电路、先进电路器件、集成功率系统和器件普遍应用于驱动高性能运算设备及降低电机的能耗(电机乃全世界最大之耗能设备) ，是众多国际知名厂商开发下一代运算机、节能电器、照明设备、汽车、卫星系统及宇航系统的电源治理基准。
国际整流器在中国多个城市有分支机构，IR代理商遍及热点城市。
如在深圳有艾睿，安富利，南皇电子等代理商，在苏州，上海，天津和北京有设计中心。
并在天津有较大规模的工厂，要紧从事封装和测试等。
主营产品：1．HEXFET功率MOSFETS 2．功率IC 3．IGBT 4．肖特基二极管5．FETKY 6．微电子继电器7．智能功率开关8．快恢复二极管9．输入二极管10．可控硅产品11．HEXFRED产品2、ABBABB集团位列全世界500强企业，集团总部位于瑞士苏黎世。
ABB 由两个历史100连年的国际性企业瑞典的阿西亚公司（ASEA）和瑞士的布朗勃法瑞公司（BBC Brown Boveri）在1988年归并而成。
两公司别离成立于1883年和1891年。
ABB是电力和自动化技术领域的领导厂商。
ABB的技术能够帮忙电力、公共事业和工业客户提高业绩，同时降低对环境的不良阻碍。
ABB集团业务遍及全世界100多个国家，拥有13万名员工，2020年销售额高达320亿美元。
3、赛米控佛山市赛米控电子科技将环境爱惜放在第一名，强调了绿色能源的功能性和有效性，实施以质量为核心的IS09001质量保证体系、QS工业生产许可认证、CE认证，强化体系营销，尽力营造具有特殊代表性的技术效劳系统，推出的产品严格依照德国标准全自动生产，由德国工程师进行品质治理。
4、台基公司自2004年成立以来，一直专注于大功率二极管及模块的研发、制造、销售及相关效劳。
目前，公司已形成年产280万只大功率晶闸管及模块的生产能力，是我国销量最大的大功率半导体器件供给商之一。
DC1234推荐LDO原厂DCY品牌
Output Voltage : 50mV increments A
e.g. ②=1,③=5,④=A 1.55V
Active 'High'
①
B
(no pull-down resistor built in)
Package Type
⑤
M
SOT-23-5L
C
Active 'Low' (pull-up resistor built in)
■ Features
Output Voltage Range: 0.85V to 1.8V (selectable in 50mV steps)
Highly Accurate : ±2%（less than 1.5V is ±30mV) Dropout Voltage : 300mV @ 100mA (1.5V type) High Ripple Rejection: 60dB (10kHz) Low Power Consumption: 50μA (TYP.) Maximum Output Current : 300mA（VIN≥2.5V） Standby Current : less than 0.1μA Internal protector: current limiter and short protector Small packages: SOT-23-5,SOT-353 and other
■ Applications
Mobile phones Cordless phones Modem Portable games
Portable AV equipment Reference voltage Battery powered equipment PCMCIA cards
US1D 快速恢复二极管原厂DCY品牌推荐
20
100
AMBIENT TEMPERATURE / ℃
NUMBER OF CYCLES AT 60HZ
FIG. 5 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50Ω N.1. 10Ω N.1. (-) PULSE GENERATOR ( NOTE 2 ) 1Ω N.1. OSCILLOSCOPE ( NOTE ) (+) 1.0A 0.5A
trr
(+) 50 Vdc (APPROX) (-) NOTES:
D.U.T
0
0.25A
1. RISE TIME = 7n SEC MAX. INPUT IMPEDANCE = 1 MEGOHM. 22PF 2. RISE TIME = 10n SEC MAX. SOURCE IMPEDANCE = 50 OHM. SET TIME BASE FOR 15 ns / cm
CURRENT AMPERES
Single Phase Half Wave 60HZ Resistive or Inductive Load
1.0
Tj = 125 ℃ 8.3 ms Single Half Sing -Wave
15 10 5 0 1.0 2.0 10
0.5 0 0 25 50 75 100 125 150 175 200
inch ( mm )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ℃ ambient temperature unless otherwise specified. Single phase. half wave. 60HZ. resistive or inductive load. For capacitive load. derate current by 20 ％ SYMBOL US1A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL = 110℃ Peak Forward Surge Current 8.3ms Single half-sine-wave superimposed on rated Tj = 125℃ Maximum Forward Voltage at 1.0A DC Maximum Reverse Current TA = 25℃ at Rated DC Blocking Voltage T A = 100℃ Maximum reverse recovery time（Note 1） Typical Junction Capacitance ( Note ２ ) Typical Thermal Resistance ( Note ３ ) Operating Junction Temperature Range Storage Temperature Range NOTE: VF IR trr Cj RQJA Tj TSTG 50 17 60 55 to 150 55 to 150 1.0 10.0 50 75 1.7 V μA ns pF ℃/W ℃ ℃ IFSM 30 A VRRM VRMS VDC I(AV) 50 35 50 US1B 100 70 100 US1D 200 140 200 US1G 400 280 400 1.0 US1J 600 420 600 US1K 800 560 800 US1M 1000 700 1000 UNITS V V V A
R3AF--R3MF整流快速恢复二极管原厂DCY品牌推荐
R3MF R3KF R3JF R3GF R3DF R3BF R3AF R3AF THRU R3MFSURFACE MOUNT FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 AmpereNote:1.Reverse recovery condition I F =0.5A,I R =1.0A,Irr=0.25A2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areasMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSVOLTS VOLTS VOLTS SYMBOLS UNITS AmpAmps Volts V RRM V RMS V DC I (AV)I FSM V F 3.0100.01.3Operating junction and storage temperature rangeMaximum repetitive peak reverse voltage Maximum RMS voltageMaximum DC blocking voltageMaximum average forward rectified current at T L =90 CPeak forward surge current8.3ms single half sine-wave superimposed on rated load (JEDEC Method)Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =125 C I R 5.0200.0R θJA C J T J ,T STG20.060.0-50 to +150pF CA µTypical thermal resistance (NOTE 3)C/W Typical junction capacitance (NOTE 2)Maximum reverse recovery time (NOTE 1)t rr 150250500ns Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.5035501007010020014020040028040060042060080056080010007001000NumberRATINGS AND CHARACTERISTIC CURVES R3AF THRU R3MF0.61.21.82.43.03.50.0255075100125150175Fig.1 Forward Current Derating CurveA v e r a g e F o r w a r d C u r r e n t (A )Ambient Temperature (°C)204060800010100Fig.5 Maximum Non-Repetitive Peak Forward Surage CurrentP e a k A )F o r w a r d S u r a g e C u r r e n t (Number of Cycles1Fig.3 Typical Instaneous Forward CharacteristicsI n s t a n e o u s F o r w a r d C u r r e n t (A )0.51.01.52.02.50.00.010.11.010Instaneous Forward Voltage (V)Fig.2 Typical Reverse Characteristics0.11.0101002040608010012000140percent of Rated Peak Voltage (%)Reverse I n s t a n e o u s C u r r e n t （A ）R e v e r s e μFig.4 Typical Junction CapacitanceJ u n c t i o n C a p a c it a n c e ( p F )1.0101000.1Reverse Voltage (V)10The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!。
ES1J超快整流SOD-123二极管厂家DCY品牌推荐
DES1J DES1GDES1EDES1D DES1C DES1B DES1A DCY Catalog DES1A THRU DES1JSURFACE MOUNT SUPER FAST RECTIFIERMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSSYMBOLSUNITS 10070100400280400150105150600420600VOLTS VOLTS VOLTS AmpAmps Volts V RRM V RMS V DC I (AV)I FSM V F 1.025.01.25Maximum repetitive peak reverse voltage Maximum RMS voltageMaximum DC blocking voltageMaximum average forward rectified current Peak forward surge current8.3ms single half sine-wave superimposed on rated load (JEDEC Method)Maximum instantaneous forward voltage at1.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =100 C I R 5.0100.0A µRatings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.E1B E1C E1D E1E E1JE1G Maximum reverse recovery time (NOTE 1)Typical junction capacitance (NOTE 2)C J pF Operating junction and storage temperature rangeNote:R θJA T J ,T STG8510-55 to +150CTypical thermal resistance (NOTE 3)°C/W 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.1.Measured with IF=0.5A, IR=1A, Irr=0.25A.3.PCB mounted on 0.2*0.2" (5.0*5.0mm) coppeer pad area.35ns 503550E1A trr 2001402003002103000.951.7Numberat Ta=65°CRATINGS AND CHARACTERISTIC CURVES DES1A THRU DES1J1.00.80.60.40.20 25 50 75 100 125 150 1750.01 0.1 1 10 1001001010.1REVERSE VOLTAGE,VOLTSt,PULSE DURATION,sec.FIG. 5-TYPICAL JUNCTION CAPACITANCEFIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCEFIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARDSURGE CURRENTFIG. 1- FORWARD CURRENT DERATING CURVEA V E R A G E F O R W A R D R E C T I F I E D C U R R E N T ,A M P E R E SJ U N C T I O N C A P A C I T A N C E , p FP E A K F O R W A R D S U R G E C U R R E N T ,A M P E R ES1001010.10.01PERCENT OF PEAK REVERSE VOLTAGE,%FIG. 4-TYPICAL REVERSE CHARACTERISTICSI N S T A N T A N E O U S R E V E R S E C U R R E N T ,M I C R O A M P E R E ST R A N S I E N T T H E R M A L I M P E D A N C E ,C /WAMBIENT TEMPERATURE, CFIG. 3-TYPICAL INSTANTANEOUS FORWARDCHARACTERISTICSI N S T A N T A N E O U S F O R W A R D C U R R E N T ,A M P E R E SINSTANTANEOUS FORWARD VOLTAGE,VOLTS0 0.4 0.8 1.2 1.6 1.8NUMBER OF CYCLES AT 60 HzThe cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!。
DMZ0615E厂家MOS管推荐DCY品牌
DMZ0615EUltrahigh Threshold Voltage Depletion-Mode Power MOSFETGeneral FeaturesESD improved CapabilityDepletion Mode (Normally On)Proprietary Advanced Planar TechnologyProprietary Advanced Ultrahigh Vth Technology RoHS CompliantHalogen-free availableApplicationsQuick Charger Current Source Voltage SourceNormally-on SwitchesGeneral DescriptionThis novel depletion mode MOSFET, developed and manufactured by ARK proprietary ultrahigh threshold voltage technology. By using the sub threshold characteristics, the depletion mode MOSFET can provide stably power to the load, and the voltage can be clamped to protect the load without Zener diode, and the circuit consumption is reduced.DrainGateSourceSOT-23NOTE：[1] T J=+25℃to +150℃[2] Repetitive rating, pulse width limited by maximum junction temperature.[3] Pulse width≤380µs; duty cycle≤2%.Rev. 1.2 Feb. 2017Rev. 1.2 Feb. 2017Depletion mode MOSFET has the function of providing power for IC in circuit, as shown in Figure 3.Figure 3The parameters of the depletion mode MOSFET and the resistance (R L) of the IC are jointly determined the voltage(V out) and current(I D) supplied to the IC.I D = I DSS(1+I D R L/V GS(OFF))2V out = -V GS = I D R LFigure 4By this way, the depletion mode MOSFET operate in sub-threshold region, the gate voltage(V GS) is always at or below threshold voltage(V GS(OFF)), even when the input voltage(V in) is increased or the peak voltage occurs also so. Therefore, in addition to provide power for IC, the device can clamp voltage, the IC is protected. The V out and V in have the following formula:If V in ＜∣V GS(OFF)∣, then V out ≈V inIf V in ≥∣V GS(OFF)∣, then V out ≤V GS(OFF)The Ultrahigh Threshold Voltage Depletion-Mode Power MOSFET--DMZ0615E, was developed by ARK Microelectronics using proprietary technology. The threshold voltage of DMZ0615E exceeds -16V, can provide sufficient voltage for IC.Rev. 1.2 Feb. 2017In the QC2.0/3.0 and Type-C charger circuits, using the depletion mode MOSFET can make the PWM IC power supply circuit more simplified, as shown below:In Figure 5, the transistor Q3 is used to provide power, and the zener diode ZD is used to clamp voltage, the power supply circuit of IC is composed of several components.PWM ICFigure 5In figure 6, providing power and clamp voltage use only one device-DMZ0615E, the circuit is simplified.PWM ICFigure 6Rev. 1.2 Feb. 2017Rev. 1.2 Feb. 2017。
SMF(SOD123FL)系列TVS管厂家DCY品牌推荐
Reverse Leakage @VRWM
IR(uA)
400 400 250 100 50 25 10 5.0 2.5 2.5 2.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
IT (mA)
10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
Reverse Stand-Off Voltage
VRWM (V)
5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170
SS520A肖特基二极管DCY品牌厂家推荐
YTZV
YTZV
YTZV
09 42!& 100 06 ! 215 `
&35%'(2)391 201463 422
0*1 3* 8149
6 8 0123!4"#$%
Unit：inch（mm）
特征 Features
·大电流承受能力。High Current Capability ·正向压降低。Low Forward Voltage Drop ·高温焊接保证 High temperature soldering guaranteed:
250℃/10 秒, 0.375" (9.5mm)引线长度。 250℃/10 seconds, 0.375" (9.5mm) lead length, ·引线可承受5 磅 (2.3kg) 拉力。 5 lbs. (2.3kg) tension
YTZV
3333QQ3333 0 06 ! 215 ! 26
201463 422
90b*,1 3* 8149
346214214 *!3 6310* 00 66 9 00 42
2 10 &!0,11*08 60 065 9 00 42
480
9 : 46
: 5
6
4 604 0
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FOSAN富信电子 二极管 US1A-US1M-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.US1A-US1MSMA Super Fast Recovery Diode特快恢复二极管■Features 特点High current capability 高电流能力Low forward voltage drop 低正向压降Super Fast Recovery time 特快恢复时间Surface mount device 表面贴装器件Case 封装:SMA■Maximum Rating 最大额定值(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号US 1A US 1B US 1D US 1G US 1J US 1K US 1M Unit 单位Repetitive Peak Reverse Voltage 重复峰值反向电压V RRM 501002004006008001000V DC Reverse Voltage 直流反向电压V R 501002004006008001000V RMS Reverse Voltage 反向电压均方根值V R(RMS)3570140280420560700V Forward Rectified Current 正向整流电流I F 1A Peak Surge Current 峰值浪涌电流I FSM 30AThermal Resistance J-A 结到环境热阻R θJA 50℃/WJunction/Storage Temperature 结温/储藏温度T J,T stg-50to+150℃℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号US1A-US1DUS1G US1J-US1MUnit 单位Condition 条件Forward Voltage 正向电压V F 1.01.3 1.65V I F =1A Reverse Current 反向电流I R 5(T A =25℃)100(T A =125℃)µA V R =V RRM Reverse Recovery Time 反向恢复时间Trr 5075nS I F =0.5A,I R =1A Irr=0.25A Junction Capacitance 结电容C J15pFV R =4V,f=1MHz安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.US1A-US1M ■Typical Characteristic Curve典型特性曲线■Dimension外形封装尺寸。
US1K快恢复二极管
Dimensions in inches and (illimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%)
o
75 10
C/W o C
TECHNICAL SPECIFICATION
SMA/DO-214AC
B A C D F G
A B MAX. .110(2.79) .177(4.50) MIN. .100(2.54) .157(3.99) E F MAX. .208(5.28) .090(2.29) MIN. .194(4.93) .078(1.98)
H
C D .058(1.47) .012(0.305) .052(1.32) .006(0.152) G H .008(0.203) .060(1.52) .004(0.102) .030(0.76)
MECHANICAL DATA
• Terminal: Plated leads solderable per MIL-STD 202E, method 208C • Case: Molded with UL-94 Class V-O recognized flame retardant epoxy • Polarity: Color band denotes cathode
US 1A 50 35 50
US 1B 100 70 100
适用于高频和低频的二极管的型号
适用于高频和低频的二极管的型号在电子元件中，二极管是一种基础的元件，它具有单向导电性，可以将电流只允许在一个方向通过。
二极管常用于电源、整流、信号检测等电路中。
在选择二极管时，需要考虑其特性参数，如最大反向电压、最大正向电流等，以及适用于高频和低频的不同型号。
一、适用于高频的二极管高频电路中，二极管往往需要具有快速的开关速度和低的反向电容，以确保信号传输的准确性和稳定性。
以下是几种适用于高频的二极管型号：1. 快速恢复二极管（FRD）快速恢复二极管是一种具有快速恢复时间的二极管，其反向恢复时间一般在50纳秒以下。
它通常用于高频整流电路和高速开关电路中。
由于其恢复时间短，可以减少反向失真和电磁干扰。
2. 高速开关二极管（HSD）高速开关二极管是一种具有快速开关速度的二极管，其开关速度一般在10纳秒以下。
它通常用于高频开关电路和脉冲电路中。
由于其开关速度快，可以减少开关损耗和电磁干扰。
3. 双向二极管（TVS）双向二极管是一种具有双向保护功能的二极管，可以在正向和反向电压下进行保护。
它通常用于高频电路中，可以有效地保护电路免受电压浪涌和静电放电的影响。
二、适用于低频的二极管低频电路中，二极管往往需要具有较高的正向电导和较低的反向电流，以确保电路的稳定性和低噪声。
以下是几种适用于低频的二极管型号：1. 硅整流二极管（SBD）硅整流二极管是一种具有高正向电导和低反向电流的二极管，通常用于低频整流电路和功率控制电路中。
由于其正向电导高，可以减少电路损耗和发热。
2. 碳化硅二极管（SiC）碳化硅二极管是一种具有高温、高电压和高频特性的二极管，通常用于高功率、高频率和高温度的电路中。
由于其具有较低的反向电流和较高的开关速度，可以提高电路的效率和稳定性。
3. 低噪声放大器二极管（LNA）低噪声放大器二极管是一种具有低噪声系数和高增益的二极管，通常用于低噪声放大器和射频前端电路中。
由于其具有较低的噪声系数和较高的增益，可以提高电路的灵敏度和信噪比。
US1B超快恢复整流SMA(DO-214AC)二极管规格书
1Surface Mount Ultrafast RectifierUS1A thru US1M FEATURES•Low profile package•Ideal for automated placement •Glass passivated chip junction •Ultrafast reverse recovery time •Low switching losses, high efficiency •High forward surge capability•Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C•Compliant to RoH S Directive 2002/95/EC and in accordance to WEEE 2002/96/EC•Halogen-free according to IEC 61249-2-21 definitionTYPICAL APPLICATIONSFor use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication.MECHANICAL DATACase: DO-214AC (SMA)Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoH S compliant, and commercial gradeTerminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode endPRIMARY CHARACTERISTICSIF(AV) 1.0 A V RRM 50 V to 1000 VI FSM 30 A t rr 50 ns, 75 ns V F 1.0 V, 1.7 V T J max.150 °CDO-214AC (S MA)MAXIMUM RATINGS (T A = 25°C unless otherwise noted)PARAMETERSYMBOLUS1AUS1BUS1DUS1GUS1JUS1KUS1MUNITMaximum repetitive peak reverse voltage V RRM 501002004006008001000V Maximum RMS voltage V RMS 3570140280420560700V Maximum DC blocking voltageV DC 501002004006008001000V Maximum average forward rectified current at T L = 110 °C I F(AV) 1.0A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated loadI FSM 30A Operating and storage temperature rangeT J , T STG- 55 to + 150°C2Note(1)Pulse test: 300 μs pulse width, 1 % duty cycleNote(1)PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areaRATINGS AND CHARACTERSITICS CURVES(T A = 25 °C unless otherwise noted)Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge CurrentELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETERTEST CONDITIONS SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT Maximum instantaneous forward voltage1.0 AV F (1) 1.01.7V Maximum DC reverse current at rated DC blocking voltage T A = 25 °C I R 10μAT A = 100 °C50Maximum reverse recovery timeI F = 0.5 A, I R = 1.0 A,I rr = 0.25 A t rr 5075ns Typical junction capacitance4.0 V, 1 MHzC J1510pFTHERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETERSYMBOL US1AUS1BUS1DUS1G US1JUS1KUS1MUNIT Maximum thermal resistanceR θJA (1)75°C/WR θJL (1)27ORDERING INFORMATION (Example)PREFERRED P/N UNIT WEIGHT (g)PREFERRED PACKAGE CODEBASE QUANTITYDELIVERY MODEUS1J-M3/61T 0.06461T 18007" diameter plastic tape and reel US1J-M3/5AT0.0645AT750013" diameter plastic tape and reelFig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage CharacteristicsFig. 5 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Reverse Leakage Characteristics Fig. 7 - Typical Junction CapacitanceFig. 8 - Typical Transient Thermal Impedance3PACKAGE OUTLINE DIMENSIONS in inches (millimeters)4。
us1d二极管参数
us1d二极管参数US1D二极管参数US1D是一种常用的二极管，具有以下参数：1. 最大正向工作电压（VRRM）：US1D二极管的最大正向工作电压为1000伏特。
这意味着当二极管正向导通时，其正向电压不应超过1000V，否则可能会导致损坏。
2. 最大正向平均整流电流（IO）：US1D二极管的最大正向平均整流电流为1安培。
这表示在正向导通状态下，二极管的电流应小于或等于1A，以保证其正常工作和可靠性。
3. 最大反向漏电流（IR）：US1D二极管的最大反向漏电流为5微安。
这意味着当二极管处于反向偏置状态时，其反向漏电流应小于或等于5μA，以避免不必要的功耗和电路不稳定。
4. 正向压降（VF）：US1D二极管的正向压降范围为0.85V至1.1V。
这表示当二极管正向导通时，其正向压降应在0.85V至1.1V之间，以确保电路中其他元件得到适当的电压供应。
5. 最大反向恢复时间（trr）：US1D二极管的最大反向恢复时间为50纳秒。
这意味着当二极管从正向导通状态切换到反向截止状态时，其反向恢复时间应小于或等于50ns，以确保电路的快速响应和稳定性。
6. 封装类型：US1D二极管通常采用DO-214AC（SMA）封装，这是一种表面贴装封装，方便在PCB上进行焊接和安装。
7. 工作温度范围：US1D二极管的工作温度范围为-55℃至+150℃。
这意味着二极管可以在相对较宽的温度范围内正常工作，适用于各种环境条件。
8. 应用领域：由于US1D二极管具有较高的正向工作电压和较小的封装尺寸，因此广泛应用于电源管理、开关电源、逆变器和照明等领域。
它可以用作整流器、保护二极管和电压稳定器等元件，以提供可靠的电路保护和稳定的电源输出。
总结起来，US1D二极管是一种具有较高正向工作电压、较小封装尺寸和快速反向恢复时间的二极管。
其最大正向工作电压为1000V，最大正向平均整流电流为1A，最大反向漏电流为5μA。
它适用于各种环境温度下的电源管理、开关电源和照明等领域。
ZMM160稳压二极管原厂DCY品牌推荐
Reverse Leakage Current
Ta =25oC Ta = 125oC
μA
μA
IR at VR V
Temp coefficient of Zener Voltage
TKvz %/K
ZMM 13)
0.75
5
0.7...0.8
<8
<50
1
--
--
--
-0.26...-0.23
ZMM 2V0
2.7
5
2.5...2.9
<85
<600
1
<10
<50
1
-0.09...-0.06
ZMM 3V0
3.0
5
2.8...3.2
<85
<600
1
<4
<40
1
-0.08...-0.05
ZMM 3V3
3.3
5
3.1...3.5
<85
<600
1
<2
<40
1
-0.08...-0.05
ZMM 3V6
3.6
5
3.4...3.8
These diodes are also available in DO-35 case with the type designation BZX55C...
ZMM 1...ZMM200
Absolute Maximum Ratings (Ta = 25oC)
Symbol
Value
Unit
Power Dissipation
3) The ZMM1 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be “F” instead of “Z”. Connect
AO3401(MOS场效应管)原厂DCY品牌推荐
SOT-23場效應晶體管(SOT-23Field EffectTransistors)P -Channel Enhancement-Mode MOS FETs P 沟道增强型MOS 场效应管■MAXIMUMRATINGS最大額定值Characteristic 特性參數Symbol 符號Max 最大值Unit 單位Drain-Source V oltage 漏極-源極電壓BV DSS -30V Gate-Source Voltage 栅極-源極電壓V GS +12V Drain Current (continuous)漏極電流-連續I D -3.8A Drain Current (pulsed)漏極電流-脉冲I DM -15A Total Device Dissipation 總耗散功率T A =25℃環境溫度爲25℃P D 1250mW Junction 結溫T J 150℃Solder Temperature/Solder Time 焊接溫度/焊接時間T/t 260/10℃/S Storage Temperature 儲存溫度T stg-55to+150℃AO3401■ELECTRICAL CHARACTERISTICS 電特性(T A =25℃unless otherwise noted 如無特殊說明，溫度爲25℃)Characteristic 特性參數Symbol 符號Min 最小值Typ 典型值Max 最大值Unit 單位Drain-Source Breakdown Voltage漏極-源極擊穿電壓(I D =-250uA,V GS =0V)BV DSS -30——V Gate Threshold Voltage栅極開启電壓(I D =-250uA,V GS =V DS )V GS(th)-0.6—-2V Diode Forward Voltage Drop内附二極管正向壓降(I S =-1A,V GS =0V)V SD——-1VZero Gate Voltage Drain Current零栅壓漏極電流(V GS =0V,V DS =-24V)(V GS =0V,V DS =-24V ,T A =55℃)I DSS ——-1-5u AGate Body Leakage栅極漏電流(V GS =+12V,V DS =0V)I GSS ——+100n A Static Drain-Source On-State Resistance 静态漏源導通電阻(I D =-3.8A,V GS =-10V)R DS(ON)—5060mΩStatic Drain-Source On-State Resistance 静态漏源導通電阻(I D =-2A,V GS =-4.5V)R DS(ON)—6080mΩStatic Drain-Source On-State Resistance 静态漏源導通電阻(I D =-1A,V GS =-2.5V)R DS(ON)—75100mΩInput Capacitance 輸入電容(V GS =0V,V DS =-15V,f=1MHz)C ISS —954—pF Output Capacitance 輸出電容(V GS =0V,V DS =-15V,f=1MHz)C OSS —115—pF Turn-ON Time 开启時間(V DS =-15V,V GS =-10V,R GEN =6Ω)t (on)— 6.3—ns Turn-OFF Time 关断時間(V DS =-15V,V GS =-10V,R GEN =6Ω)t (off)—38.2—nsPulse Width<300μs;Duty Cycle<2.0%AO3401■DIMENSION 外形封裝尺寸單位(UNIT)：mmAO3401。
MM5Z全系列SOD-523稳压二极管原厂DCY品牌推荐
Zener Voltage Regulators150mW SOD–523Surface MountWe declare that the material of product compliance with RoHS requirements.ORDERING INFORMATIONDevice Package Shipping MM5ZXXXT1GSOD-5233000/Tape&ReelThis series of Zener diodes is packaged in a SOD–523surface mount package that has a power dissipation of 100mW.They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium.They are well suited for applications such as cellular phones,hand held portables,and high density PC boards.Specification Features:•Standard Zener Breakdown Voltage Range –2.4V to 75V •Steady State Power Rating of 200mW•Small Body Outline Dimensions:0.047"x 0.032"(1.20mm x 0.80mm)•Low Body Height:0.028"(0.7mm)•ESD Rating of Class 3(>16kV)per Human Body ModelMechanical Characteristics:CASE:Void-free,transfer-molded,thermosetting plastic Epoxy Meets UL 94V-0LEAD FINISH:100%Matte Sn (Tin)QUALIFIED MAX REFLOW TEMPERATURE:260°C Device Meets MSL 1Requirements MOUNTING POSITION:AnyMAXIMUM RATINGSRatingSymbol Max Unit Total Device Dissipation FR−5Board,P D150mW@T A =25︒C Junction and Storage T J,Tstg−65to ︒CTemperature Range+150Maximum ratings are those values beyond which devicedamage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions)and are not valid simultaneously.If these limits are exceeded,device functional operation is not implied,damage may occur and reliability may be affected.MM5Z2V4T1G SERIES12CATHODE ANODEMARKING DIAGRAMxx dxx=Specific Device Code d =Date CodeSOD–523MM5Z2V4T1G SERIES ELECTRICAL CHARACTERISTICS I(T A=25︒C unless otherwise noted,I FV F=0.9V Max.@I F=10mA for all types)Symbol ParameterVZ Reverse Zener Voltage@I ZT IZT Reverse Current VZVRVZ ZT Maximum Zener Impedance@I I R VFZT IZTIZK Reverse CurrentZZK Maximum Zener Impedance@I ZKIR Reverse Leakage Current@V RV R Reverse VoltageI F Forward Current Zener Voltage Regulator V F Forward Voltage@I FQV Z Maximum Temperature Coefficient of V ZC Max.Capacitance@V R=0and f=1MHz100(%)80DISS IP ATI ON 60 40POWER20255075100125150TEMPERATURE(︒C)Figure1.Steady State Power Derating MM5Z2V4T1G SERIESELECTRICAL CHARACTERISTICS (T A =25︒C unless otherwise noted,V F =0.9V Max.@I F =10mA for all types)Zener Voltage (Note 1)Zener Impedance Leakage CurrentQ V Z C ZZT(mV/k)@V =0V(Volts)@I@I ZT Z@II @VRZZKR@IZTf =1MHzDevice ZTZKRDevice Marking Min Nom Max mA W W mA m A Volts Min Max pF MM5Z2V4T1G 00 2.2 2.4 2.651001000 1.050 1.0−3.50450MM5Z2V7T1G 01 2.5 2.7 2.951001000 1.020 1.0−3.50450MM5Z3V0T1G 02 2.8 3.0 3.251001000 1.010 1.0−3.50450MM5Z3V3T1G 05 3.1 3.3 3.55951000 1.05 1.0−3.50450MM5Z3V6T1G 06 3.4 3.6 3.85901000 1.05 1.0−3.50450MM5Z3V9T1G 07 3.7 3.9 4.15901000 1.03 1.0−3.5−2.5450MM5Z4V3T1G 08 4.0 4.3 4.65901000 1.03 1.0−3.50450MM5Z4V7T1G 09 4.4 4.7 5.0580800 1.03 2.0−3.50.2260MM5Z5V1T1G 0A 4.8 5.1 5.4560500 1.02 2.0−2.7 1.2225MM5Z5V6T1G 0C 5.2 5.6 6.0540400 1.01 2.0−2.0 2.5200MM5Z6V2T1G 0E 5.8 6.2 6.6510100 1.03 4.00.4 3.7185MM5Z6V8T1G 0F 6.4 6.87.2515160 1.02 4.0 1.2 4.5155MM5Z7V5T1G 0G 7.07.57.9515160 1.01 5.0 2.5 5.3140MM5Z8V2T1G 0H 7.78.28.7515160 1.00.7 5.0 3.2 6.2135MM5Z9V1T1G 0K 8.59.19.6515160 1.00.27.0 3.87.0130MM5Z10VT1G 0L 9.41010.6520160 1.00.18.0 4.58.0130MM5Z11VT1G 0M 10.41111.6520160 1.00.18.0 5.49.0130MM5Z12VT1G 0N 11.41212.752580 1.00.18.0 6.010130MM5Z13VT1G 0P 12.413.2514.153080 1.00.18.07.011120MM5Z15VT1G 0T 14.31515.8530200 1.00.0510.59.213110MM5Z16VT1G 0U 15.316.217.1240200 1.00.0511.210.414105MM5Z18VT1G 0W 16.81819.1245225 1.00.0512.612.416100MM5Z20VT1G 0Z 18.82021.2255225 1.00.0514.014.41885MM5Z22VT1G 1020.82223.3255250 1.00.0515.416.42085MM5Z24VT1G 1122.824.225.6270120 1.00.0516.818.42280MM5Z27VT1G 1225.12728.9280300 1.00.0518.921.425.370MM5Z30VT1G 14283032280300 1.00.0521.024.429.470MM5Z33VT1G 18313335280300 1.00.0523.227.433.470MM5Z36VT1G 19343638290500 1.00.0525.230.437.470MM5Z39VT1G 203739412130500 1.00.0527.333.441.245MM5Z43VT1G 214043461150500 1.00.0530.137.646.640MM5Z47VT1G 1A 4447501170500 1.00.0532.942.051.840MM5Z51VT1G 1C 4851541180500 1.00.0535.746.657.240MM5Z56VT1G 1D 5256601200500 1.00.0539.252.263.840MM5Z62VT1G 1E 5862661215500 1.00.0543.458.871.635MM5Z68VT1G 1F 6468721240500 1.00.0547.665.679.835MM5Z75VT1G1G70757912555001.00.0552.573.488.6351.Zener voltage is measured with a pulse test current I Z at an ambient temperature of 25︒C.MM5Z2V4T1G SERIESSC-79/SOD-523DIMENSIONS (mm are the original dimensions)UNIT A b p c D E H E V m m0.70.350.2 1.30.9 1.70.150.50.250.11.10.71.5Note1.The marking bar indicates the cathode.OUTLINE REFERENCES EUROPEAN ISSUE DATEVERSION IECJEDECEIAJ PROJECTIONSOD523SC-7998-11-25。
在开关电源中使用慢恢复二极管
在开关电源中使用慢恢复二极管慢恢复二极管（Slow Recovery Diode）也被称为超快恢复二极管（Ultra-Fast Recovery Diode），是一种特殊的二极管。
在一些特殊的应用场合，如开关电源，慢恢复二极管可以发挥更好的性能。
开关电源是一种将交流电转换为直流电的电源，广泛应用于各种电子设备中。
开关电源的工作原理是通过快速开关进行周期性的开关操作，将输入的交流电转换为稳定的直流电输出。
在开关电源中，慢恢复二极管主要用于整流电路，起到将交流电转换为直流电的作用。
慢恢复二极管相较于普通二极管来说，具有更快的恢复时间和更低的反向漏电流。
恢复时间是指二极管从关断状态恢复到导通状态所需的时间。
这是由于慢恢复二极管的PN结采用特殊的材料和工艺制造而成，使得其结能够在更短的时间内恢复到正常导通状态。
1.快速开关速度：由于慢恢复二极管恢复时间较短，可以更快地切断开关管的失去导通电流，从而减小了能量的损耗和热量产生，提高了整个开关电源的效率。
2.减小电磁干扰：慢恢复二极管在开关操作时具有较低的开关电压峰值，减小了电磁干扰问题。
3.降低二次谐波：在开关电源的整流电路中，慢恢复二极管能够减小二次谐波的产生，改善了输出波形的质量。
4.降低开关噪声：慢恢复二极管的快速恢复时间减小了二极管导通时的开关噪声，提升了整个开关电源的工作稳定性。
然而，在使用慢恢复二极管时也需要考虑一些问题：1.成本较高：相较于普通二极管，慢恢复二极管的制造工艺和材料成本较高，从而增加了开关电源的成本。
2.散热要求高：由于慢恢复二极管的恢复速度较快，容易产生较大的功率损耗，需要有较好的散热措施。
3.选型困难：慢恢复二极管有着多种规格和参数，需要根据具体的开关电源设计需求选择合适的型号。
综上所述，慢恢复二极管在开关电源中的应用可以提升整个电路的效率、稳定性和工作质量。
然而，它的使用也需要考虑成本、散热和选型方面的问题。
在实际应用中，需要综合考虑各个方面的因素，选择合适的二极管类型和参数，以满足开关电源的性能需求。
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trr
(+) 50 Vdc (APPROX) (-) NOTES:
D.U.T
0
0.25A
1. RISE TIME = 7n SEC MAX. INPUT IMPEDANCE = 1 MEGOHM. 22PF 2. RISE TIME = 10n SEC MAX. SOURCE IMPEDANCE = 50 OHM. SET TIME BASE FOR 15 ns / cm
30 Tj = 25 ℃
AMPERES
0.4
CAPACITANCE. PF
1.8
10
0.1 0.04 0 0.4 0.6 0.8 1.0 Pulse Width = 300μS 1 % Duly Cycle 1.2 1.4 1.6
3.0
1.0 1.0 4.0 10 100
INSTANTANEOUS FORWARD VOLTAGE / VOLTS
CURRENT AMPERES
Single Phase Half Wave 60HZ Resistive or Inductive Load
1.0
Tj = 125 ℃ 8.3 ms Single Halቤተ መጻሕፍቲ ባይዱ Sing -Wave
15 10 5 0 1.0 2.0 10
0.5 0 0 25 50 75 100 125 150 175 200
1. Reverse revovery condition IF=0.5A IR=1.0A Irr=0.25A. 2. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC. 3. Thermal Resistance Junction to Ambient.
inch ( mm )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ℃ ambient temperature unless otherwise specified. Single phase. half wave. 60HZ. resistive or inductive load. For capacitive load. derate current by 20 ％ SYMBOL US1A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL = 110℃ Peak Forward Surge Current 8.3ms Single half-sine-wave superimposed on rated Tj = 125℃ Maximum Forward Voltage at 1.0A DC Maximum Reverse Current TA = 25℃ at Rated DC Blocking Voltage T A = 100℃ Maximum reverse recovery time（Note 1） Typical Junction Capacitance ( Note ２ ) Typical Thermal Resistance ( Note ３ ) Operating Junction Temperature Range Storage Temperature Range NOTE: VF IR trr Cj RQJA Tj TSTG 50 17 60 55 to 150 55 to 150 1.0 10.0 50 75 1.7 V μA ns pF ℃/W ℃ ℃ IFSM 30 A VRRM VRMS VDC I(AV) 50 35 50 US1B 100 70 100 US1D 200 140 200 US1G 400 280 400 1.0 US1J 600 420 600 US1K 800 560 800 US1M 1000 700 1000 UNITS V V V A
20
100
AMBIENT TEMPERATURE / ℃
NUMBER OF CYCLES AT 60HZ
FIG. 5 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50Ω N.1. 10Ω N.1. (-) PULSE GENERATOR ( NOTE 2 ) 1Ω N.1. OSCILLOSCOPE ( NOTE ) (+) 1.0A 0.5A
MECHANICAL DATA
. Case: JEDEC DO - 214AC. molded plastic body . Terminals: Solder plated. Solderable per MIL - STD - 750. Method 2026 . Polarity: Color band denotes cathode . Weight: 0.075 grams . Mounting position: Any
REVERSE VOLTAGE / VOLTS
FIG. 3 -- FORWARD CURRENT DERATING CURVE 30 AVERAGE FORWARD RECTIFIED PEAK FORWARD SURGE CURRENT AMPERES
1.5 25 20
FIG. 4 -- PEAK FORWARD SURGE CURRENT
US1A THRU US1M
FIG. 1 -- TYPICAL FORWARD CHARACTERISTIC
10
FIG. 2 -- TYPICAL JUNCTION CAPACITANCE
100
INSTANTANEOUS FORWARD CURRENT /
3.0 1.0 Pulse width=300us 1% duly cycle
US1A THRU US1M
1.0AMP ULTRA FAST SURFACE MOUNT RECTIFIERS
REVERSE VOLTAGE 50 TO 1000 VOLTS
FEATURES
. Low cost . Diffused junction . Low Leakage . Low forward voltage drop . High current capability . Easily cleaned with Freon. Alcohol. Lsopropanol and similar solvents . The plastic material carries U/L recognition 94V-O
DO - 214AC(SMA)
0.071(1.80) 0.055(1.40) 0.177(4.20) 0.157(3.90)
0.106(2.70) 0.098(2.50)
0.012(0.305) 0.006(0.152) 0.087(2.22) 0.078(1.98) 0.060(1.52) 0.030(0.76) 0.008(0.203)MAX 0.222(5.65) 0.196(4.98)