2SA1943_04中文资料

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2SA2004中文资料

Collector-emitter cutoff current (Base open) Forward current transfer ratio
vi
si
VCE = −2V, IC = − 0.1 A VCE = −2 V, IC = −5 V IC = −5 A, IB = − 0.25 A IC = −5 A, IB = − 0.25 A IC = −4 A
at io n.
Max −100 −100 230 −1.2 −1.7 0.5 0.15 1.0
Unit V µA µA V V µs µs µs
Publication date: January 2003
SJD00009CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
• High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV • High−speed switching
at io n.
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.

2SK系列三极管

2SA系列三极管参数2SA1006B SI-P 250V 1.5A 25W 80MHz2SA1009 SI-P 350V 2A 15W |2SA1011 SI-P 160V 1.5A 25W 120MHz2SA1013 SI-P 160V 1A 0.9W 50MHz |2SA1015 SI-P 50V 0.15A 0.4W 80MHz2SA1016 SI-P 100V 0.05A 0.4W 110MHz |2SA1017 SI-P 120V 50mA 0.5W 110MHz2SA1018 SI-P 250V 70mA 0.75W >50MHz |2SA1020 SI-P 50V 2A 0.9W 100MHz2SA1027 SI-P 50V 0.2A 0.25W 100MHz |2SA1029 SI-P 30V 0.1A 0.2W 280MHz2SA1034 SI-P 35V 50mA 0.2W 200MHz |2SA1037 SI-P 50V 0.4A 140MHz FR2SA1048 SI-P 50V 0.15A 0.2W 80MHz |2SA1049 SI-P 120V 0.1A 0.2W 100MHz2SA1061 SI-P 100V 6A 70W 15MHz |2SA1062 SI-N 120V 7A 80W 15MHz2SA1065 SI-P 150V 10A 120W 50MHz |2SA1084 SI-P 90V 0.1A 0.4W 90MHz2SA1103 SI-P 100V 7A 70W 20MHz |2SA1106 SI-P 140V 10A 100W 20MHz2SA1110 SI-P 120V 0.5A 5W 250MHz |2SA1111 SI-P 150V 1A 20W 200MHz2SA1112 SI-P 180V 1A 20W 200MHz |2SA1115 SI-P 50V 0.2A 200MHz UNI2SA1120 SI-P 35V 5A 170MHz |2SA1123 SI-P 150V 50mA 0.75W 200MHz2SA1124 SI-P 150V 50mA 1W 200MHz |2SA1127 SI-P 60V 0.1A 0.4W 200MHz2SA1141 SI-P 115V 10A 100W 90MHz |2SA1142 SI-P 180V 0.1A 8W 180MHz2SA1145 SI-P 150V 50mA 0.8W 200MHz |2SA1150 SI-P 35V 0.8A 0.3W 120MHz2SA1156 SI-P 400V 0.5A 10W POWER |2SA1160 SI-P 20V 2A 0.9W 150MHz2SA1163 SI-P 120V 0.1A 100MHz |2SA1170 SI-P 200V 17A 200W 20MHz2SA1185 SI-P 50V 7A 60W 100MHz |2SA1186 SI-P 150V 10A 100W2SA1200 SI-P 150V 50mA 0.5W 120MHz |2SA1201 SI-P 120V 0.8A 0.5W 120MHz2SA1206 SI-P 15V 0.05A 0.6W |2SA1208 SI-P 180V 0.07A 0.9W |2SA1209 SI-P 180V 0.14A 10W2SA1210 SI-P 200V 0.14A 10W |2SA1213 SI-P 50V 2A 0.5W 120MHz2SA1215 SI-P 160V 15A 150W 50MHz | 2SA1216 SI-P 180V 17A 200W 40MHz2SA1220A SI-P 120V 1.2A 20W 160MHz | 2SA1221 SI-P 160V 0.5A 1W 45MHz2SA1225 SI-P 160V 1.5A 15W 100MHz | 2SA1227A SI-P 140V 12A 120W 60MHz2SA1232 SI-P 130V 10A 100W 60MHz | 2SA1241 SI-P 50V 2A 10W 100MHz2SA1242 SI-P 35V 5A 1W 170MHz |2SA1244 SI-P 60V 5A 20W 60MHz2SA1249 SI-P 180V 1.5A 10W 120MHz | 2SA1261 SI-P 100V 10A 60W POWER2SA1262 SI-P 60V 4A 30W 15MHz |2SA1264N SI-P 120V 8A 80W 30MHz2SA1265N SI-P 140V 10A 100W 30MHz | 2SA1266 SI-P 50V 0.15A 0.4W POWER2SA1268 SI-N 120V 0.1A 0.3W 100MHz | 2SA1270 SI-P 35V 0.5A 0.5W 200MHz2SA1271 SI-P 30V 0.8A 0.6W 120MHz | 2SA1275 SI-P 160V 1A 0.9W 20MHz2SA1282 SI-P 20V 2A 0.9W 80MHz |2SA1283 SI-P 60V 1A 0.9W 85MHz2SA1286 SI-P 30V 1.5A 0.9W 90MHz | 2SA1287 SI-P 50V 1A 0.9W 90MHz2SA1292 SI-P 80V 15A 70W 100MHz | 2SA1293 SI-P 100V 5A 30W 0.2us2SA1294 SI-P 230V 15A 130W |2SA1295 SI-P 230V 17A 200W 35MHz2SA1296 SI-P 20V 2A 0.75W 120MHz | 2SA1298 SI-P 30V 0.8A 0.2W 120MHz2SA1300 SI-P 10V 2A 0.75W 140MHz | 2SA1302 SI-P 200V 15A 150W 25MHz2SA1303 SI-P 150V 14A 125W 50MHz | 2SA1306 SI-P 160V 1.5A 20W2SA1306A SI-P 180V 1.5A 20W 100MHz | 2SA1307 SI-P 60V 5A 20W 0.1us2SA1309 SI-P 30V 0.1A 0.3W 80MHz | 2SA1310 SI-P 60V 0.1A 0.3W 200MHz2SA1315 SI-P 80V 2A 0.9W 0.2us |2SA1317 SI-P 60V 0.2A 0.3W 200MHz | 2SA1318 SI-P 60V 0.2A 0.5W 200MHz2SA1319 SI-P 180V 0.7A 0.7W 120MHz | 2SA1321 SI-P 250V 50mA 0.9W 100MHz2SA1328 SI-P 60V 12A 40W 0.3us |2SA1329 SI-P 80V 12A 40W 0.3us2SA1345 SI-N 50V 0.1A 0.3W 250MHz | 2SA1346 SI-P 50V 0.1A 200MHz2SA1348 SI-P 50V 0.1A 200MHz |2SA1349 P-ARRAY 80V 0.1A 0.4W 1702SA1352 SI-P 200V 0.1A 5W 70MHz | 2SA1357 SI-P 35V 5A 10W 170MHz2SA1358 SI-P 120V 1A 10W 120MHz | 2SA1359 SI-P 40V 3A 10W 100MHz2SA1360 SI-P 150V 50mA 5W 200MHz | 2SA1361 SI-P 250V 50mA 80MHz2SA1370 SI-P 200V 0.1A 1W 150MHz | 2SA1371E SI-P 300V 0.1A 1W 150MHz2SA1376 SI-P 200V 0.1A 0.75W 120MHz | 2SA1380 SI-P 200V 0.1A 1.2W2SA1381 SI-P 300V 0.1A 150MHz |2SA1382 SI-P 120V 2A 0.9W 0.2us2SA1383 SI-P 180V 0.1A 10W 180MHz | 2SA1386 SI-P 160V 15A 130W 40MHz2SA1387 SI-P 60V 5A 25W 80MHz | 2SA1392 SI-P 60V 0.2A 0.4W 200MHz2SA1396 SI-P 100V 10A 30W |2SA1399 SI-P 55V 0.4A 0.9W 150MHz2SA1400 SI-P 400V 0.5A 10W |2SA1403 SI-P 80V 0.5A 10W 800MHz2SA1405 SI-P 120V 0.3A 8W 500MHz | 2SA1406 SI-P 200V 0.1A 7W 400MHz2SA1407 SI-P 150V 0.1A 7W 400MHz | 2SA1413 SI-P 600V 1A 10W 26MHz2SA1428 SI-P 50V 2A 1W 100MHz | 2SA1431 SI-P 35V 5A 1W 170MHz2SA1441 SI-P 100V 5A 25W <300ns |2SA1443 SI-P 100V 10A 30W2SA1450 SI-P 100V 0.5A 0.6W 120MHz | 2SA1451 SI-P 60V 12A 30W 70MHz2SA1460 SI-P 60V 1A 1W <40NS |2SA1470 SI-P 80V 7A 25W 100MHz2SA1475 SI-P 120V 0.4A 15W 500MHz |2SA1477 SI-P 180V 0.14A 10W 150MHz |2SA1488 SI-P 60V 4A 25W 15MHz2SA1489 SI-P 80V 6A 60W 20MHz |2SA1490 SI-P 120V 8A 80W 20MHz2SA1491 SI-P 140V 10A 100W 20MHz |2SA1494 SI-P 200V 17A 200W 20MHz2SA1507 SI-P 180V 1.5A 10W 120MHz |2SA1515 SI-P 40V 1A 0.3W 150MHz2SA1516 SI-P 180V 12A 130W 25MHz |2SA1519 SI-P 50V 0.5A 0.3W 200MHz2SA1535A SI-P 180V 1A 40W 200MHz |2SA1538 SI-P 120V 0.2A 8W 400MHz2SA1539 SI-P 120V 0.3A 8W 400MHz |2SA1540 SI-P 200V 0.1A 7W 300MHz2SA1541 SI-P 200V 0.2A 7W 300MHz |2SA1553 SI-P 230V 15A 150W 25MHz2SA1566 SI-N 120V 0.1A 0.15W 130MHz |2SA1567 SI-P 50V 12A 35W 40MHz2SA1568 SI-P 60V 12A 40W | 2SA1577 SI-P 32V 0.5A 0.2W 200MHz2SA1593 SI-P 120V 2A 15W 120MHz |2SA1601 SI-P 60V 15A 45W2SA1606 SI-P 180V 1.5A 15W 100MHz | 2SA1615 SI-P 30V 10A 15W 180MHz 2SA1624 SI-P 300V 0.1A 0.5W 70MHz | 2SA1625 SI-P 400V 0.5A 0.75W2SA1626 SI-P 400V 2A 1W 0.5/2.7us |2SA1633 SI-P 150V 10A 100W 20MHz2SA1643 SI-P 50V 7A 25W 75MHz |2SA1667 SI-P 150V 2A 25W 20MHz2SA1668 SI-P 200V 2A 25W 20MHz |2SA1670 SI-P 80V 6A 60W 20MHz2SA1671 SI-P 120/120V 8A 75W 20MHz |2SA1672 SI-P 140V 10A 80W 20MHz2SA1673 SI-P 180V 15A 85W 20MHz |2SA1680 SI-P 60V 2A 0.9W 100/400ns2SA1684 SI-P 120V 1.5A 20W 150MHz |2SA1694 SI-P 120/120V 8A 80W 20MHz2SA1695 SI-P 140V 10A 80W 20MHz |2SA1703 SI-P 30V 1.5A 1W 180MHz2SA1706 SI-P 60V 2A 1W |2SA1708 SI-P 120V 1A 1W 120MHz2SA1726 SI-P 80V 6A 50W 20MHz |2SA1776 SI-P 400V 1A 1W2SA1803 SI-P 80V 6A 55W 30MHz |2SA1837 SI-P 230V 1A 20W 70MHz2SA1962 SI-P 230V 15A 130W 25MHz2SA329 GE-P 15V 10mA 0.05W |2SA467 SI-P 40V 0,4A 0,3W2SA473 SI-P 30V 3A 10W 100MHz | 2SA483 SI-P 150V 1A 20W 9MHz2SA493 SI-P 50V 0.05A 0.2W 80MHz | 2SA495 SI-P 35V 0.1A 0.2W 200MHz2SA562 SI-P 30V 0.5A 0.5W 200MHz | 2SA566 SI-P 100V 0.7A 10W 100MHz2SA608 SI-N 40V 0.1A 0.1W 180MHz | 2SA614 SI-P 80V 1A 15W 30MHz2SA620 SI-P 30V 0.05A 0.2W 120MHz | 2SA626 SI-P 80V 5A 60W 15MHz2SA628 SI-P 30V 0.1A 100MHz |2SA639 SI-P 180V 50mA 0,25W2SA642 SI-P 30V 0.2A 0.25W 200MHz | 2SA643 SI-P 40V 0.5A 0.5W 180MHz2SA653 SI-P 150V 1A 15W 5MHz | 2SA684 SI-P 60V 1A 1W 200MHz2SA699 SI-P 40V 2A 10W 150MHz | 2SA708A SI-P 100V 0.7A 0.8W 50MHz2SA720 SI-P 60V 0.5A 0.6W 200MHz | 2SA725 SI-P 35V 0.1A 0.15W 100MHz2SA733 SI-P 60V 0.15A 0.25W 50MHz | 2SA738 SI-P 25V 1.5A 8W 160MHz2SA747 SI-P 120V 10A 100W 15MHz | 2SA756 SI-P 100V 6A 50W 20MHz2SA762 SI-P 110V 2A 23W 80MHz | 2SA765 SI-P 80V 6A 40W 10MHz2SA768 SI-P 60V 4A 30W 10MHz | 2SA769 SI-P 80V 4A 30W 10MHz2SA770 SI-P 60V 6A 40W 10MHz | 2SA771 SI-P 80V 6A 40W 2MHz2SA777 SI-P 80V 0.5A 0.75W 120MHz | 2SA778A SI-P 180V 0.05A 0.2W 60MHz2SA781 SI-P 20V 0.2A 0.2W <80/16 |2SA794 SI-P 100V 0.5A 5W 120MHz2SA794A SI-P 120V 0.5A 5W 120MHz | 2SA812 SI-P 50V 0.1A 0.15W2SA814 SI-P 120V 1A 15W 30MHz | 2SA816 SI-P 80V 0.75A 1.5W 100MHz2SA817 SI-P 80V 0.3A 0.6W 100MHz | 2SA817A SI-P 80V 0.4A 0.8W 100MHz2SA838 SI-P 30V 30mA 0.25W 300MHz2SA839 SI-P 150V 1.5A 25W 6MHz |2SA841 SI-P 60V 0.05A 0.2W 140MHz2SA858 SI-P 150V 50mA 0.5W 100MHz |2SA872 SI-P 90V 0.05A 0.2W 120MHz2SA872A SI-P 120V 50mA 0.3W 120MHz |2SA884 SI-P 65V 0.2A 0.27W 140MHz2SA885 SI-P 45V 1A 5W 200MHz |2SA886 SI-P 50V 1.5A 1.2W2SA893 SI-P 90V 50mA 0.3W | 2SA900 SI-P 18V 1A 1.2W2SA914 SI-P 150V 0.05A 200MHz |2SA915 SI-P 120V 0.05A 0.8W 80MHz2SA916 SI-P 160V 0.05A 1W 80MHz |2SA921 SI-P 120V 20mA 0.25W 200MHz2SA933 SI-P 50V 0.1A 0.3W | 2SA934 SI-P 40V 0.7A 0.75W2SA935 SI-P 80V 0.7A 0.75W 150MHz |2SA937 SI-P 50V 0.1A 0.3W 140MHz2SA940 SI-P 150V 1.5A 25W 4MHz |2SA941 SI-P 120V 0.05A 0.3W 150MHz2SA949 SI-P 150V 50mA 0.8W 120MHz |2SA965 SI-P 120V 0.8A 0.9W 120MHz2SA966 SI-P 30V 1.5A 0.9W 120MHz |2SA968 SI-P 160V 1.5A 25W 100MHz2SA970 SI-P 120V 0.1A 100MHz |2SA982 SI-P 140V 8A 80W 20MHz2SA984 SI-P 60V 0.5A 0.5W 120MHz |2SA985 SI-P 120V 1.5A 25W 180MHz2SA988 SI-P 120V 0.05A 0.5W |2SA991 SI-P 60V 0.1A 0.5W 90MHz2SA992 SI-P 100V 0.05A 0.2W |2SA995 SI-P 100V 0.05A 0.4W 100MHz2SB系列三极管参数2SB1009 SI-P 40V 2A 10W 100MHz | 2SB1010 SI-P 40V 2A 0.75W 100MHz2SB1012K P-DARL 120V 1.5A 8W | 2SB1013 SI-P 20V 2A 0.7W2SB1015 SI-P 60V 3A 25W 0.4us | 2SB1016 SI-P 100V 5A 30W 5MHz2SB1017 SI-P 80V 4A 25W 9MHz | 2SB1018 SI-P 100V 7A 30W 0.4us2SB1020 P-DARL+D 100V 7A 30W 0.8us | 2SB1023 P-DARL+D 60V 3A 20W B=5K 2SB1035 SI-P 30V 1A 0.9W 100MHz | 2SB1039 SI-P 100V 4A 40W 20MHz2SB1050 SI-P 30V 5A 1W 120MHz | 2SB1055 SI-P 120V 6A 70W 20MHz2SB1065 SI-P 60V 3A 10W | 2SB1066 SI-P 50V 3A 1W 70MHz2SB1077 P-DARL 60V 4A 40W B>1K | 2SB1086 SI-P 160V 1.5A 20W 50MHz2SB1098 P-DARL+D 100V 5A 20W B=80 | 2SB1099 P-DARL+D 100V 8A 25W B=6K 2SB1100 P-DARL+D 100V 10A 30W B=6 | 2SB1109 SI-P 160V 0.1A 1.25W2SB1109S SI-P 160V 0.1A 1.25W | 2SB1117 SI-P 30V 3A 1W 280MHz2SB1120 SI-P 20V 2.5A 0.5W 250MHz | 2SB1121T SI-P 30V 2A 150MHz2SB1123 SI-P 60V 2A 0.5W 150MHz | 2SB1132 SI-P 40V 1A 0.5W 150MHz2SB1133 SI-P 60V 3A 25W 40MHz | 2SB1134 SI-P 60V 5A 25W 30W2SB1135 SI-P 60V 7A 30W 10MHz | 2SB1136 SI-P 60V 12A 30W 10MHz2SB1140 SI-P 25V 5A 10W 320MHz | 2SB1141 SI-P 20V 1.2A 10W 150MHz2SB1143 SI-P 60V 4A 10W 140MHz | 2SB1146 P-DARL 120V 6A 25W2SB1149 P-DARL 100V 3A 15W B=10K | 2SB1151 SI-P 60V 5A 20W2SB1154 SI-P 130V 10A 70W 30MHz | 2SB1156 SI-P 130V 20A 100W2SB1162 SI-P 160V 12A 120W | 2SB1163 SI-P 170V 15A 150W2SB1166 SI-P 60V 8A 20W 130MHz | 2SB1168 SI-P 120V 4A 20W 130MHz2SB1182 SI-P 40V 2A 10W 100MHz | 2SB1184 SI-P 60V 3A 15W 70MHz2SB1185 SI-P 50V 3A 25W 70MHz | 2SB1186 SI-P 120V 1.5A 20W 50MHz2SB1187 SI-P 80V 3A 35W | 2SB1188 SI-P 40V 2A 100MHz2SB1202 SI-P 60V 3A 15W 150MHz | 2SB1203 SI-P 60V 5A 20W 130MHz2SB1204 SI-P 60V 8A 20W 130MHz | 2SB1205 SI-P 25V 5A 10W 320MHz2SB1212 SI-P 160V 1.5A 0.9W 50MHz | 2SB1223 P-DARL+D 70V 4A 20W 20MHz2SB1236 SI-P 120V 1.5A 1W 50MHz | 2SB1237 SI-P 40V 1A 1W 150MHz2SB1238 SI-P 80V 0.7A 1W 100MHz | 2SB1240 SI-P 40V 2A 1W 100MHz2SB1243 SI-P 60V 3A 1W | 2SB1254 P-DARL 160V 7A 70W2SB1255 P-DARL 160V 8A 100W B>5K | 2SB1258 P-DARL+D 100V 6A 30W B>1K 2SB1274 SI-P 60V 3A 30W 100MHz | 2SB1282 P-DARL+D 100V 4A 25W 50MHz 2SB1292 SI-P 80V 5A 30W | 2SB1302 SI-P 25V 5A 320MHz2SB1318 P-DARL+D 100V 3A 1W B>200 | 2SB1326 SI-P 30V 5A 0.3W 120MHz2SB1329 SI-P 40V 1A 1.2W 150MHz | 2SB1330 SI-P 32V 0.7A 1.2W 100MHz2SB1331 SI-P 32V 2A 1.2W 100MHz | 2SB1353E SI-P 120V 1.5A 1.8W 50MHz2SB1361 SI-P 150V 9A 100W 15MHz | 2SB1370 SI-P 60V 3A 30W 15MHz2SB1373 SI-P 160V 12A 2.5W 15MHz | 2SB1375 SI-P 60V 3A 25W 9MHz2SB1382 P-DARL+D 120V 16A 75W B>2 | 2SB1393 SI-P 30V 3A 2W 30MHz2SB1420 SI-P 120V 16A 80W 50MHz | 2SB1425 SI-P 20V 2A 1W 90MHz2SB1429 SI-P 180V 15A 150W 10MHz | 2SB1434 SI-P 50V 2A 1W 110MHz2SB1468 SI-P 60/30V 12A 25W | 2SB1470 P-DARL 160V 8A 150W B>5K2SB1490 P-DARL 160V 7A 90W B>5K | 2SB1493 P-DARL 160/140V 7A 70W 202SB1503 P-DARL 160V 8A 120W B>5K | 2SB1556 P-DARL 140V 8A 120W B>5K2SB1557 P-DARL 140V 7A 100W B>5K | 2SB1559 P-DARL 160V 8A 80W B>5K2SB1560 P-DARL 160V 10A 100W 50MHz | 2SB1565 SI-P 80V 3A 25W 15MHz2SB1587 P-DARL+D 160V 8A 70W B>5K | 2SB1624 P-DARL 110V 6A 60W B>5K2SB206 GE-P 80V 30A 80W | 2SB324 GE-P 32V 1A 0.25W2SB337 GE-P 50V 7A 30W LF-POWER | 2SB407 GE-P 30V 7A 30W2SB481 GE-P 32V 1A 6W 15KHz | 2SB492 GE-P 25V 2A 6W2SB527 SI-P 110V 0.8A 10W 70MHz | 2SB531 SI-P 90V 6A 50W 8MHz2SB536 SI-P 130V 1.5A 20W 40MHz | 2SB537 SI-P 130V 1.5A 20W 60MHz2SB541 SI-P 110V 8A 80W 9MHz | 2SB544 SI-P 25V 1A 0.9W 180MHz2SB546A SI-P 200V 2A 25W 5MHz | 2SB549 SI-P 120V 0.8A 10W 80MHz2SB557 SI-P 120V 8A 80W | 2SB560 SI-P 100V 0.7A 0.9W 100MHz2SB561 SI-P 25V 0.7A 0.5W | 2SB564 SI-P 30V 1A 0.8W2SB598 SI-P 25V 1A 0.5W 180MHz | 2SB600 SI-P 200V 15A 200W 4MHz2SB601 P-DARL 100V 5A 30W | 2SB605 SI-P 60V 0.7A 0.8W 120MHz2SB621 SI-N 25V 1.5A 0.6W 200MHz | 2SB621A SI-N 50V 1A 0.75W 200MHz2SB631 SI-P 100V 1A 8W | 2SB632 SI-P 25V 2A 10W 100MHz2SB633 SI-P 100V 6A 40W 15MHz | 2SB637 SI-P 50V 0.1A 0.3W 200MHz2SB641 SI-P 30V 0.1A 120MHz | 2SB647 SI-P 120V 1A 0.9W 140MHz2SB649A SI-P 160V 1.5A 1W 140MHz | 2SB656 SI-P 160V 12A 125W 20MHz2SB673 P-DARL+D 100V 7A 40W 0.8us | 2SB676 P-DARL 100V 4A 30W 0.15us2SB681 SI-N 150V 12A 100W 13MHz | 2SB688 SI-P 120V 8A 80W 10MHz2SB700 SI-P 160V 12A 100W | 2SB703 SI-P 100V 4A 40W 18MHz2SB705 SI-P 140V 10A 120W 17MHz | 2SB707 SI-P 80V 7A 40W POWER2SB709 SI-P 45V 0.1A 0.2W 80MHz | 2SB716 SI-P 120V 0.05A 0.75W2SB720 SI-P 200V 2A 25W 100MHz | 2SB727 P-DARL+D 120V 6A 50W B>1K2SB731 SI-P 60V 1A 10W 75MHz | 2SB733 SI-P 20V 2A 1W >50MHz2SB734 SI-P 60V 1A 1W 80MHz | 2SB739 SI-P 20/16V 2A 0.9W 80MHz2SB740 SI-P 70V 1A 0.9W | 2SB744 SI-P 70V 3A 10W 45MHz2SB750 P-DARL+D 60V 2A 35W B>100 | 2SB753 SI-P 100V 7A 40W 0.4us2SB764 SI-P 60V 1A 0.9A 150MHz | 2SB765 P-DARL+D 120V 3A 30W B>1K2SB766 SI-P 30V 1A 200MHz | 2SB772 SI-P 40V 3A 10W 80MHz2SB774 SI-P 30V 0.1A 0.4W 150MHz | 2SB775 SI-P 100V 6A 60W 13MHz2SB776 SI-P 120V 7A 70W 15MHz | 2SB788 SI-P 120V 0.02A 0.4W 150MHz2SB791 P-DARL+D 120V 8A 40W B>10 | 2SB794 P-DARL+D 60V 1.5A 10W B=7 2SB795 P-DARL+D 80V 1.5A 10W B<3 | 2SB808 SI-P 20V 0.7A 0.25W 250MHz2SB810 SI-P 30V 0.7A 0.35W 160MHz | 2SB815 SI-P 20V 0.7A 0.25W 250MHz2SB816 SI-P 150V 8A 80W 15MHz | 2SB817 SI-P 160V 12A 100W2SB817F SI-P 160V 12A 90W 15MHz | 2SB819 SI-P 50V 1.5A 1W 150MHz2SB822 SI-P 40V 2A 0.75W 100MHz | 2SB824 SI-P 60V 5A 30W 30 MHz2SB825 SI-P 60V 7A 40W 10MHz | 2SB826 SI-P 60V 12A 40W 10MHz2SB827 SI-P 60V 7A 80W 10MHz | 2SB828 SI-P 60V 12A 80W 10MHz2SB829 SI-P 60V 15A 90W 20MHz | 2SB857 SI-P 50V 4A 40W NF/S-L2SB861 SI-P 200V 2A 30W | 2SB863 SI-P 140V 10A 100W 15MHz2SB865 P-DARL 80V 1.5A 0.9W | 2SB873 SI-P 30V 5A 1W 120MHz2SB882 P-DARL+D 70V 10A 40W B>5K | 2SB883 P-DARL+D 70V 15A 70W B=5K 2SB884 P-DARL 110V 3A 30W B=4K | 2SB885 P-DARL+D 110V 3A 35W B=4K 2SB891 SI-P 40V 2A 5W 100MHz | 2SB892 SI-P 60V 2A 1W2SB895A P-DARL 60V 1A B=8000 | 2SB897 P-DARL+D 100V 10A 80W B>12SB908 P-DARL+D 80V 4A 15W 0.15us | 2SB909 SI-P 40V 1A 1W 150MHz2SB922 SI-P 120V 12A 80W 20MHz | 2SB926 SI-P 30V 2A 0.75W2SB938A P-DARL+D 60V 4A 40W B>1K | 2SB940 SI-P 200V 2A 35W 30MHz2SB941 SI-P 60V 3A 35W POWER | 2SB945 SI-P 130V 5A 40W 30MHz2SB946 SI-P 130V 7A 40W 30MHz | 2SB950A P-DARL+D 80V 4A 40W B>1K 2SB953A SI-P 50V 7A 30W 150MHz | 2SB955 P-DARL+D 120V 10A 50W B=4 2SB975 P-DARL+D 100V 8A 40W B>6K | 2SB976 SI-P 27V 5A 0.75W 120MHz 2SB985 SI-P 60V 3A 1W 150MHz | 2SB986 SI-P 60V 4A 10W 150MHz2SB988 SI-P 60V 3A 30W <400/22002SC系列三极管参数2SC1000 SI-N 55V 0.1A 0.2W 80MHz2SC1008 SI-N 80V 0.7A 0.8W 75MHz | 2SC1012A SI-N 250V 60mA 0.75W >80MHz 2SC1014 SI-N 50V 1.5A 7W | 2SC1017 SI-N 75V 1A 60mW 120MHz2SC1030 SI-N 150V 6A 50W | 2SC1046 SI-N 1000V 3A 25W2SC1047 SI-N 30V 20mA 0.4W 650MHz | 2SC1050 SI-N 300V 1A 40W2SC1051 SI-N 150V 7A 60W 8MHz | 2SC1061 SI-N 50V 3A 25W 8MHz=H1062SC1070 SI-N 30V 20mA 900MHz | 2SC1080 SI-N 110V 12A 100W 4MHz2SC109 SI-N 50V 0.6A 0.6W | 2SC1096 SI-N 40V 3A 10W 60MHz2SC1106 SI-N 350V 2A 80W | 2SC1114 SI-N 300V 4A 100W 10MHz2SC1115 SI-N 140V 10A 100W 10MHz | 2SC1116 SI-N 180V 10A 100W 10MHz2SC1161 SI-P 160V 12A 120W | 2SC1162 SI-N 35V 1.5A 10W 180MHz2SC1172 SI-N 1500V 5A 50W | 2SC1195 SI-N 200V 2.5A 100W2SC1213C SI-N 50V 0.5A 0.4W UNI | 2SC1214 SI-N 50V 0.5A 0.6W 50MHz2SC1215 SI-N 30V 50mA 0.4W 1.2GHZ | 2SC1216 SI-N 40V 0.2A 0.3W <20/402SC1226 SI-N 40/50V 2A 10W 150MHz | 2SC1238 SI-N 35V 0.15A 5W 1.7GHz2SC1247A SI-N 50V 0.5A 0.4W 60MHz | 2SC1308 SI-N 1500V 7A 50W2SC1312 SI-N 35V 0.1A 0.15W 100MHz | 2SC1318 SI-N 60V 0.5A 0.6W 200MHz2SC1343 SI-N 150V 10A 100W 14MHz | 2SC1345 SI-N 55V 0.1A 0.1W 230MHz2SC1359 SI-N 30V 30mA 0.4W 250MHz | 2SC1360 SI-N 50V 0.05A 1W >300MHz 2SC1362 SI-N 50V 0.2A 0.25W 140MHz | 2SC1368 SI-N 25V 1.5A 8W 180MHz2SC1382 SI-N 80V 0.75A 5W 100MHz | 2SC1384 SI-N 60V 1A 1W 200MHz2SC1393 SI-N 30V 20mA 250 mW 700MHz | 2SC1398 SI-N 70V 2A 15W2SC1413A SI-N 1200V 5A 50W | 2SC1419 SI-N 50V 2A 20W 5MHz2SC1426 SI-N 35V 0.2A 2.7GHz | 2SC1431 SI-N 110V 2A 23W 80MHz2SC1432 N-DARL 30V 0.3A 0.3W B=40 | 2SC1439 SI-N 150V 50mA 0.5W 130MHz 2SC1445 SI-N 100V 6A 40W 10MHz | 2SC1446 SI-N 300V 0.1A 10W 55MHz2SC1447 SI-N 300V 0.15A 20W 80MHz | 2SC1448 SI-N 150V 1.5A 25W 3MHz2SC1449 SI-N 40V 2A 5W 60MHz | 2SC1450 SI-N 150V 0.4A 20W2SC1454 SI-N 300V 4A 50W 10MHz | 2SC1474-4 SI-N 20V 2A 0.75W 80MHz2SC1501 SI-N 300V 0.1A 10W 55MHz | 2SC1505 SI-N 300V 0.2A 15W2SC1507 SI-N 300V 0.2A 15W 80MHz | 2SC1509 SI-N 80V 0.5A 1W 120MHz2SC1515 SI-N 200V 0.05A 0.2W 110MHz | 2SC1520 SI-N 300V 0.2A 12,5W2SC1545 N-DARL 40V 0.3A 0.3W B=1K | 2SC1567 SI-N 100V 0.5A 5W 120MHz2SC1570 SI-N 55V 0.1A 0.2W 100MHz | 2SC1571 SI-N 40V 0.1A 0.2W 100MHz2SC1573 SI-N 200V 0.1A 1W 80MHz | 2SC1577 SI-N 500V 8A 80W 7MHz2SC1583 SI-N 50V 0.1A 0.4W 100MHz | 2SC1619 SI-N 100V 6A 50W 10MHz2SC1623 SI-N 60V 0.1A 0.2W 250MHz | 2SC1624 SI-N 120V 1A 15W 30MHz2SC1627 SI-N 80V 0.4A 0.8W 100MHz | 2SC1674 SI-N 30V .02A 600MC RF/IF2SC1675 SI-N 50V .03A 0.25W | 2SC1678 SI-N 65V 3A 3W2SC1685 SI-N 60V 0.1A 150MC UNI | 2SC1688 SI-N 50V 30mA 0.4W 550MHz2SC1708A SI-N 120V 50mA 0.2W 150MHz | 2SC1729 SI-N 35V 3.5A 16W 500MHz 2SC1730 SI-N 30V 0.05A 1.1GHz UHF | 2SC1740 SI-N 40V 100mA 0.3W2SC1741 SI-N 40V 0.5A 0.3W 250MHz | 2SC1756 SI-N 300V 0.2A >50MHz2SC1760 SI-N 100V 1A 7.9W 80MHz | 2SC1775A SI-N 120V 0.05A 0.2W UNI2SC1781 SI-N 50V 0.5A 0.35W | 2SC1815 SI-N 50V 0.15A 0.4W 80MHz2SC1815BL SI-N 60V 0.15A 0.4W B>350 | 2SC1815GR SI-N 60V 0.15A 0.4W B>200 2SC1815Y SI-N 60V 0.15A 0.4W B>120 | 2SC1827 SI-N 100V 4A 30W 10MHz2SC1832 N-DARL 500V 15A 150W B>10 | 2SC1841 SI-N 120V 0.05A 0.5W2SC1844 SI-N 60V 0.1A 0.5W 100MHz | 2SC1845 SI-N 120V 0.05A 0.5W2SC1846 SI-N 120V 0.05A 0.5W | 2SC1847 SI-N 50V 1.5A 1.2W2SC1855 SI-N 20V 20mA 0.25W 550MHz | 2SC1871 SI-N 450V 15A 150W <1/3us2SC1879 N-DARL+D 120V 2A 0.8W B>1 | 2SC1890 SI-N 90V 0.05A 0.3W 200MHz 2SC1895 SI-N 1500V 6A 50W 2MHz | 2SC1906 SI-N 19V 0.05A 0.3W2SC1907 SI-N 30V 0.05A 1100MHz | 2SC1913 SI-N 150V 1A 15W 120MHz2SC1914 SI-N 90V 50mA 0.2W 150MHz | 2SC1921 SI-N 250V 0.05A 0.6W2SC1922 SI-N 1500V 2.5A 50W | 2SC1923 SI-N 30V 20mA 10mW 550MHz2SC1929 SI-N 300V 0.4A 25W 80MHz | 2SC1941 SI-N 160V 50mA 0.8W2SC1944 SI-N 80V 6A PQ=16W | 2SC1945 SI-N 80V 6A 20W2SC1946A SI-N 35V 7A 50W | 2SC1947 SI-N 35V 1A 4W/175MHz2SC1953 SI-N 150V 0.05A 1.2W 70MHz | 2SC1957 SI-N 40V 1A 1.8W/27MHz2SC1959 SI-N 30V 0.5A 0.5W 200MHz | 2SC1967 SI-N 35V 2A 8W 470MHz2SC1968 SI-N 35V 5A 3W 470MHz | 2SC1969 SI-N 60V 6A 20W2SC1970 SI-N 40V 0.6A 5W | 2SC1971 SI-N 35V 2A 12.5W2SC1972 SI-N 35V 3.5A 25W | 2SC1975 SI-N 120V 2A 3.8W 50MHz2SC1980 SI-N 120V 20mA 0.25W 200MHz | 2SC1984 SI-N 100V 3A 30W B=7002SC1985 SI-N 80V 6A 40W 10MHz | 2SC2023 SI-N 300V 2A 40W 10MHz2SC2026 SI-N 30V 0.05A 0.25W | 2SC2027 SI-N 1500/800V 5A 50W2SC2036 SI-N 80V 1A PQ=1..4W | 2SC2053 SI-N 40V 0.3A 0.6W 500MHz2SC2055 SI-N 18V 0,3A 0,5W | 2SC2058 SI-N 40V 0.05A 0.25W2SC2060 SI-N 40V 0.7A 0.75W 150MHz | 2SC2061 SI-N 80V 1A 0.75W 120MHz2SC2068 SI-N 300V 0.05A 95MHz | 2SC2073 SI-N 150V 1.5A 25W 4MHz2SC2078 SI-N 80V 3A 10W 150MHz | 2SC2086 SI-N 75V 1A 0.45W/27MHz2SC2092 SI-N 75V 3A 5W 27MHz | 2SC2094 SI-N 40V 3.5A PQ>15W 175MHz 2SC2097 SI-N 50V 15A PQ=85W | 2SC2120 SI-N 30V 0.8A 0.6W 120MHz2SC2122 SI-N 800V 10A 50W | 2SC2166 SI-N 75V 4A 12.5W RFPOWER2SC2168 SI-N 200V 2A 30W 10MHz | 2SC2200 SI-N 500V 7A 40W 1US2SC2209 SI-N 50V 1.5A 10W 150MHz | 2SC2216 SI-N 45V 50mA 0.3W 300MHz2SC2243日本富士通公司Si-NPN 450V 5A<1MHZ 或者未知工作频率BU326 BU526 BU626ABUW71 BUX44 BUX45 TIP57A TIP58A 3DK308B2SC2244日本富士通公司Si-NPN450V8A<1MHZ 或者未知工作频率BU526 BU626A BUW72 BUX15 BUX44 TIP57A TIP58A 3DK308B2SC2245日本富士通公司Si-NPN450V10A<1MHZ 或者未知工作频率BU526 BU626A BUW24 BUX25 BUW26 BUW34 BUW35 BUW36 BUW72 3DK308B BU415 BU626A BUV25 BUW44 BUX25 2SD396 2SD641 3DK308B BUT56(A)BUX64 MJE53T2SC1865 2SC22002SC2248日本富士通公司Si-NPN450V8A<1MHZ或者未知工作频率BUT56(A)BUX64BUY65MJE130063DK306B 2SC2249日本富士通公司Si-NPN250V30A<1MHZ或者未知工作频率2SC13012SC18732SC22042SC22202SC24422SC24452SD6433DK210E 2SC225日本富士通公司Si-NPN80V1A150MHZBD139BD169BD179BD237BD4412SC1253DK30C2SC2250日本富士通公司Si-NPN450V30A<1MHZ或者未知工作频率2SC13002SC14702SC18742SC22042SC22202SC24423DK210F 2SC2251日本富士通公司Si-NPN45V0.5A900MHZBLX973DA392SC2253日本富士通公司Si-NPN45V2A900MHZ3DA23B2SC2254日本富士通公司Si-NPN45V4A900MHZ3DA100B 2SC2255日本富士通公司Si-NPN45V6A900MHZ2SC20443DA6B2SC2256日本三肯公司Si-NPN200V15A10MHZBDW16BUX11BUX412SC2019 2SD552 2SD583 3DK209D2SC2257未知生产厂家Si-NPN180V0.05A80MHZBF415BF458BF459BF469BF4712SC2257A日本松下公司Si-NPN220V0.05A80MHZBF415BF458BF459BF469BF4713DA87CBF415BF417BF458BF459BF460BF469BF7572SC34173DA87C3DA151DBF417BF459BF8502SC34172SC34182SC2228 SI-N 160V 0.05A 0.75W >50 | 2SC2229 SI-N 200V 50mA 0.8W 120MHz2SC2230 SI-N 200V 0.1A 0.8W 50MHz | 2SC2233 SI-N 200V 4A 40W 8MHz2SC2235 SI-N 120V 0.8A 0.9W 120MHz | 2SC2236 SI-N 30V 1.5A 0.9W 120MHz2SC2237 SI-N 35V 2A PQ>7.5W 175MHz | 2SC2238 SI-N 160V 1.5A 25W 100MHz2SC2240 SI-N 120V 50mA .3W 100MHz | 2SC2261 SI-N 180V 8A 80W 15MHz2SC2267 SI-N 400/360V 0.1A 0.4W | 2SC2270 SI-N 50V 5A 10W 100MHz2SC2271 SI-N 300V 0.1A 0.9W 50MHz | 2SC2275 SI-N 120V 1.5A 25W 200MHz2SC2283 SI-N 38V 0.75A 2.8W(500MHz | 2SC2287 SI-N 38V 1.5A 7.1W 175MHz2SC2295 SI-N 30V 0.03A 0.2W 250MHz | 2SC2307 SI-N 500V 12A 100W 18MHz2SC2308 SI-N 55V 0.1A 0.2W 230MHz | 2SC2310 SI-N 55V 0.1A 0.2W 230MHz2SC2312 SI-N 60V 6A 18.5W/27MHz | 2SC2314 SI-N 45V 1A 5W2SC2320 SI-N 50V 0,2A 0,3W | 2SC2329 SI-N 38V 0.75A 2W 175MHz2SC2331 SI-N 150V 2A 15W POWER | 2SC2333 SI-N 500/400V 2A 40W2SC2334 SI-N 150V 7A 40W POWER | 2SC2335 SI-N 500V 7A 40W POWER2SC2336B SI-N 250V 1.5A 25W 95MHz | 2SC2344 SI-N 180V 1.5A 25W 120MHz2SC2347 SI-N 15V 50mA 250mW 650MHz | 2SC2362 SI-N 120V 50mA 0.4W 130MHz 2SC2363 SI-N 120V 50mA 0.5W 130MHz | 2SC2365 SI-N 600V 6A 50W POWER2SC2369 SI-N 25V 70mA 0.25W 4.5GHz | 2SC2383 SI-N 160V 1A 0.9W 100MHz2SC2389 SI-N 120V 50mA 0.3W 140MHz | 2SC2407 SI-N 35V 0.15A 0.16W 500MHz 2SC2412 SI-N 50V 0.1A 180MHz | 2SC2433 SI-N 120V 30A 150W 80MHz2SC2440 SI-N 450V 5A 40W | 2SC2458 SI-N 50V 0.15A 0.2W 80MHz2SC2466 SI-N 30V 0.05A 2.2GHz | 2SC2482 SI-N 300V 0.1A 0.9W 50MHz2SC2485 SI-N 100V 6A 70W 15MHz | 2SC2486 SI-N 120V 7A 80W 15MHz2SC2491 SI-N 100V 6A 40W 15MHz | 2SC2497 SI-N 70V 1.5A 5W 150MHz2SC2498 SI-N 30V 0.05A 0.3W 3.5GHz | 2SC2508 SI-N 40V 6A 50W 175MHz2SC2510 SI-N 55V 20A 250W(28MHz) | 2SC2512 SI-N 30V 50mA 900MHz TUNE2SC2516 SI-N 150V 5A 30W <0.5/2us | 2SC2517 SI-N 150V 5A 30W <0.5/2us2SC2538 SI-N 40V 0.4A 0.7W | 2SC2539 SI-N 35V 4A 17W 175MHz2SC2542 SI-N 450V 5A 40W | 2SC2547 SI-N 120V 0.1A 0.4W2SC2551 SI-N 300V 0.1A 0.4W 80MHz | 2SC2552 SI-N 500V 2A 20W2SC2553 SI-N 500V 5A 40W 1us | 2SC2562 SI-N 60V 5A 25W 0.1us2SC2563 SI-N 120V 8A 80W 90MHz | 2SC2570A SI-N 25V 70mA 0.6W2SC2579 SI-N 160V 8A 80W 20MHz | 2SC2581 SI-N 200V 10A 100W2SC2590 SI-N 120V 0.5A 5W 250MHz | 2SC2592 SI-N 180V 1A 20W 250MHz2SC2603 SI-N 50V 0.2A 0.3W | 2SC2610 SI-N 300V 0.1A 0.8W 80MHz2SC2611 SI-N 300V 0.1A 0.8W 80MHz | 2SC2621E SI-N 300V 0.2A 10W >50MHz2SC2625 SI-N 450V 10A 80W | 2SC2630 SI-N 35V 14A 100W2SC2631 SI-N 150V 50mA 0,75W 160MHz | 2SC2632 SI-N 150V 50mA 1W 160MHz 2SC2634 SI-N 60V 0.1A 0.4W 200MHz | 2SC2653 SI-N 350V 0.2A 15W >50MHz2SC2654 SI-N 40V 7A 40W | 2SC2655 SI-N 50V 2A 0.9W 0.1us2SC2656 SI-N 450V 7A 80W <1.5/4.5 | 2SC2660 SI-N 200V 2A 30W 30MHz2SC2668 SI-N 30V 20mA 0.1W 550MHz | 2SC2671 SI-N 15V 80mA 0.6W 5.5GHz2SC2682 SI-N 180V 0.1A 8W 180MHz | 2SC2690 SI-N 120V 1.2A 20W 160MHz2SC2694 SI-N 35V 20A 140W | 2SC2705 SI-N 150V 50mA 0.8W 200MHz2SC2706 SI-N 140V 10A 100W 90MHz | 2SC2712 SI-N 50V 0.15A 0.15W 80MHz2SC2714 SI-N 30V 20mA 0.1W 550MHz | 2SC2717 SI-N 30V 50mA 0.3W 300MHz2SC2724 SI-N 30V 30mA 200MHz | 2SC2749 SI-N 500V 10A 100W 50MHz2SC2750 SI-N 150V 15A 100W POWER | 2SC2751 SI-N 500V 15A 120W 50MHz2SC2752 SI-N 500V 0.5A 10W <1/3.5 | 2SC2753 SI-N 17V 0.07A 0.3W 5GHz2SC2759 SI-N 30V 50mA 0.2W 2.3GHz | 2SC2786 SI-N 20V 20mA 600MHz2SC2792 SI-N 850V 2A 80W | 2SC2793 SI-N 900V 5A 100W2SC2802 SI-N 300V 0.2A 10W 80MHz | 2SC2808 SI-N 100V 50mA 0.5W 140MHz2SC2810 SI-N 500V 7A 50W 18MHz | 2SC2812 SI-N 55V 0.15A 0.2W 100MHz2SC2814 SI-N 30V 0.03A 320MHz F | 2SC2825 SI-N 80V 6A 70W B>5002SC2837 SI-N 150V 10A 100W 70MHz | 2SC2839 SI-N 20V 30mA 0.15W 320MHz 2SC2851 SI-N 36V 0.3A 1W 1.5GHz | 2SC2873 SI-N 50V 2A 0.5W 120MHz2SC2878 SI-N 20V 0.3A 0.4W 30MHz | 2SC2879 SI-N 45V 25A PEP=100W 28MHz 2SC2882 SI-N 90V 0.4A 0.5W 100MHz | 2SC288A SI-N 35V 20mA 0.15W2SC2898 SI-N 500V 8A 50W | 2SC2901 SI-N 40V 0.2A 0.6W <12/182SC2908 SI-N 200V 5A 50W 50MHz | 2SC2910 SI-N 160V 70mA 0.9W 150MHz2SC2911 SI-N 180V 140mA 10W 150MHz | 2SC2912 SI-N 200V 140mA 10W 150MHz 2SC2922 SI-N 180V 17A 200W 50MHz | 2SC2923 SI-N 300V 0.1A 140MHz2SC2928 SI-N 1500V 5A 50W | 2SC2939 SI-N 500V 10A 100W 2.5us2SC2958 SI-N 160V 0.5A 1W | 2SC2979 SI-N 800V 3A 40W2SC2987 SI-N 140V 12A 120W 60MHz | 2SC2988 SI-N 36V 0.5A 175MHz2SC2999 SI-N 20V 30mA 750MHz | 2SC3001 SI-N 20V 3A PQ=7W(175MHz)2SC3019 SI-N 35V 0.4A 0.6W 520MHz | 2SC3020 SI-N 35V 1A 10W2SC3022 SI-N 35V 7A 50W | 2SC3026 SI-N 1700V 5A 50W POWER2SC3030 N-DARL 900V 7A 80W | 2SC3039 SI-N 500V 7A 52W2SC3042 SI-N 500/400V 12A 100W | 2SC3052F SI-N 50V 0.2A 0.15W 200MHz2SC3063 SI-N 300V 0.1A 1.2W 140MHz | 2SC3067 2xSI-N 130V 50mA 0.5W 1602SC3068 SI-N 30V 0.3A Ueb=15V B>8 | 2SC3071 SI-N 120V 0.2A Ueb=15V B>2SC3073 SI-N 30V 3A 15W 100MHz | 2SC3074 SI-N 60V 5A 20W 120MHz2SC3075 SI-N 500V 0.8A 10W 1/1.5us | 2SC3089 SI-N 800V 7A 80W2SC3101 SI-N 250V 30A 200W 25MHz | 2SC3102 SI-N 35V 18A 170W 520MHz2SC3112 SI-N 50V 0.15A 0.4W 100MHz | 2SC3116 SI-N 180V 0.7A 10W 120MHz2SC3117 SI-N 180V 1.5A 10W 120MHz | 2SC3133 SI-N 60V 6A 1.5W 27MHz2SC3148 SI-N 900V 3A 40W 1us | 2SC3150 SI-N 900V 3A 50W 15MHz2SC3153 SI-N 900V 6A 100W | 2SC3157 SI-N 150V 10A 60W2SC3158 SI-N 500V 7A 60W | 2SC3164 SI-N 500V 10A 100W2SC3169 SI-N 500V 2A 25W >8MHz | 2SC3175 SI-N 400V 7A 50W 40MHz2SC3178 SI-N 1200V 2A 60W | 2SC3179 SI-N 60V 4A 30W 15MHz2SC3180N SI-N 80V 6A 60W 30MHz | 2SC3181N SI-N 120V 8A 80W 30MHz2SC3182N SI-N 140V 10A 100W 30MHz | 2SC3195 SI-N 30V 20mA 0.1W 550MHz 2SC3199 SI-N 60V 0.15A 0.2W 130MHz | 2SC3200 SI-N 120V 0.1A 0.3W 100MHz2SC3202 SI-N 35V 0.5A 0.5W 300MHz | 2SC3203 SI-N 35V 0.8A 0.6W 120MHz2SC3205 SI-N 30V 2A 1W 120MHz | 2SC3206 SI-N 150V 0.5A 0.8W 120MHz2SC3210 SI-N 500V 10A 100W 1us | 2SC3211 SI-N 800V 5A 70W >3MHz2SC3212 SI-N 800V 7A 3W 3.5MHz | 2SC3225 SI-N 40V 2A 0.9W 1us2SC3231 SI-N 200V 4A 40W 8MHz | 2SC3240 SI-N 50V 25A 110W 30MHz2SC3242 SI-N 20V 2A 0.9W 80MHz | 2SC3244E SI-N 100V 0.5A 0.9W 130MHz2SC3245A SI-N 150V 0.1A 0.9W 200MHz | 2SC3246 SI-N 30V 1.5A 0.9W 130MHz2SC3247 SI-N 50V 1A .9W 130MHz B> | 2SC3257 SI-N 250V 10A 40W 1/3.5us2SC3258 SI-N 100V 5A 30W 120MHz | 2SC3260 N-DARL 800V 3A 50W B>10。

2SA系列（PNP型）三极管参数表

2SA系列（PNP型）三极管参数表2SA系列(PNP型)三极管参数表型号⼚商特性⽤途集电极最⼤直流耗散功率Pcm(W)集电极最⼤允许直流电流Icm(A)集电极-基极击穿电压BVcbo(V)集电极-发射极击穿电压BVceo(V)特征频率ft(Hz)放⼤倍数国内外代换型号2SA0683PANASONIC 硅PNP三极管,低频功率放⼤和驱动，配对管2SC13831 -1.5 -30 -25 200M 50-340 CK77A2SA0684PANASONIC 硅PNP三极管,低频功率放⼤和驱动，配对管2SC13841 -1.5 -60 -50 200M 50-340 CK77A2SA0794PANASONIC 硅PNP三极管,低频功率放⼤和驱动，配对管2SC15671.2 -500m -100 -100 120M 50-220 CA77A2SA0794A PANASONIC 硅PNP三极管,低频功率放⼤和驱动，配对管2SC1567A1.2 -500m -120 -120 120M 50-220 CA77A2SA0885PANASONIC 硅PNP三极管,低频功率放⼤，配对管2SC18465 -1 -45 -35 200M 50-340 3CK10B2SA0886PANASONIC 硅PNP三极管,低频功率放⼤，配对管2SC18471.2 -1.5 -50 -40 150M 80-220 3CK10B2SA100锗PNP三极管,⾼频射频放⼤60m -10m -40 10M 80-300 3AG95A 2SA1001硅PNP三极管80 130 3CD10E 2SA1002硅PNP三极管120 120 3CD15D 2SA1003硅PNP三极管120 150 3CD15E 2SA1004硅PNP三极管310m -100m -40 3CG121C 2SA1006NEC 硅PNP三极管,功率放⼤，配对管2SC233625 -1.5 -180 -180 80M 30-320 3CA10F2SA1006A NEC 硅PNP三极管,功率放⼤，配对管2SC2336A25 -1.5 -200 -200 80M 30-320 3CA10F2SA1006B NEC 硅PNP三极管,功率放⼤，配对管2SC2336B25 -1.5 -250 -250 80M 30-320 3CA10F2SA1007硅PNP三极管100 -150 3CD8E 2SA1007A硅PNP三极管,功率开关100 -10 -150 3CD8E2SA1008NEC 硅PNP三极管,⾼速开关，DC-DC转换，⾼频功率放⼤，配对管2SC233115 -2 -100 -100 40-200 3CA5F2SA1009NEC 硅PNP三极管,⾼速开关，DC-DC转换，⾼频功率放⼤15 -2 -350 -350 102SA1009A NEC 硅PNP三极管,⾼速开关，DC-DC转换，⾼频功率放⼤15 -2 -400 -400 102SA101锗PNP三极管60m -10m -40 15M 3AG95A2SA1010NEC 硅PNP三极管,⾼压⾼速开关，DC-DC转换，⾼频功率放⼤，配对管2SC233440 -7 -100 -100 20-200 3CA10F2SA1011MOSPEC 硅PNP三极管,功率放⼤，场输出，配对管2SC234425 -1.5 -180 -160 120M 60-200 3CA10F2SA1011S SANYO 硅PNP三极管,功率放⼤，场输出，配对管2SC234425 -1.5 -180 -160 120M 60-200 3CA10F2SA1011W WS 硅PNP三极管,功率放⼤，场输出，配对管2SC234425 -1.5 -180 -160 120M 60-200 3CA10F2SA1012长电硅PNP三极管,TO-92，放⼤25 -5 -60 -50 60M 70-240 3CA10D 2SA1012M MOSPEC 硅PNP三极管,功率管25 -5 -60 -50 60M 70-240 3CA10D 2SA1012T TOSHIBA 硅PNP三极管,功率管25 -5 -60 -50 60M 70-240 3CA10D 2SA1013长电硅PNP三极管,TO-92，放⼤900m -1 -160 -160 20M 40-310 3CA3F2SA1013H TOSHIBA 硅PNP三极管,TO-92，⾳频放⼤,彩⾊电视机场输出，配对管2SC2383900m -1 -160 -160 15M 60-200 3CA3F2SA1013T TOSHIBA 硅PNP三极管,TO-92，放⼤900m -1 -160 -160 15M 40-310 3CA3F 2SA1014TOSHIBA 停产，⽤2SA1408/1013代替,10 -1 -160 20M 3CA5F2SA1015TOSHIBA 硅PNP三极管,放⼤,低噪声放⼤，配对管2SC1815400m -150m -50 -50 80M 25-400 3CG130C2SA1015L TOSHIBA 硅PNP三极管,放⼤,低噪声放⼤，配对管2SC1815400m -50m -50 -50 80M 25-400 3CG130C2SA1015M MICRO 硅PNP三极管,放⼤,低噪声放⼤，配对管2SC1815400m -50m -50 -50 80M 25-400 3CG130C2SA1016MICRO 硅PNP三极管,电压低噪声放⼤，配对管2SC2362400m -50m -120 -100 110M 160-960 3CG170D2SA1016K MICRO 400m -50m -150 -100 110M 160-960 3CG170D 2SA1017长电500m -50m -120 -100 110M 100-5603CG170C 2SA1017E PANASONIC 500m -50m -120 -100 110M 100-560 3CG170C 2SA1018PANASONIC 750m -70m -250 -250 50M 60-220 3CG180D 2SA1019750m -50m -150 110M 3CG180G 2SA10260m -10m -40 25M 12-250 3AG95A2SA1020TOSHIBA 900m -2 -50 -50 100M 40-240 CK77B 2SA1020A TRANSYS 900m -2 -50 -50 100M 70-240 CK77B2SA1020P PANASONIC 900m -2 -50 -50 100M 40-240 CK77B 2SA1020T UTC 900m -2 -50 -50 100M 40-240 CK77B2SA1021TOSHIBA 20 -1.5 -150 20M 3CA10F 2SA1022PANASONIC 200m -30m -30 -20 150M 70-220 3CG111B2SA1023250m -100m -70 180M 3CK14H 2SA1024400m -100m -400 3CK1E 2SA1025HITACHI400m -100m -60 -60 90M 250-800 3CG130E 2SA1026250m -200m -50 3CG120C 2SA1027250m -200m -50 3CG120C 2SA102895 -100 3CD8E2SA1029HITACHI300m -100m -30 -30 200M 100-500 3CG120A 2SA1029B HITACHI300m -100m -30 -30 200M 100-5003CK14F 2SA10360m -10m -40 35M 25-250 3AG95A 2SA1030HITACHI300m -100m -55 -50 200M 100-320 3CG120B2SA1030B HITACHI300m -100m -55 -50 200M 100-320 3CK14H 2SA1030C HITACHI300m -100m -55 -50 200M 100-320 3CK14H 2SA1031HITACHI300m -100m -30 -30 200M 100-500 3CG120A 2SA1031C HITACHI300m -100m -30 -30 200M 100-500 3CK14F 2SA1031D HITACHI300m -100m -30 -30 200M 100-500 3CK14F 2SA1032HITACHI300m -100m -55 -50200M 100-320 3CG120B 2SA1032B HITACHI300m -100m -55 -50 200M 100-320 3CK14H 2SA1032C HITACHI300m -100m -55 -50 200M 100-320 3CK14H 2SA1033-100m -30 280M 3CG120A 2SA1034PANASONIC 200m -50m -35 -35 200M 180-700 3CG110C 2SA1035PANASONIC 200m -50m -55 -55 200M 180-700 3CG170A 2SA1036K ROHM 200m -500m -40 -32 200M 82-3902SA1037AK ROHM 200m -150m -60 -50 140M 120-5602SA1037B LRC 200m -150m -60 -50 140M 120-5602SA1037K ROHM 200m -100m -50 -40 140M 120-5602SA1038S ROHM 300m -50m -120 -120 140M 180-560 3CG170C 2SA1039硅PNP三极管300m -50m -80 140 8203CG170C 2SA104硅PNP三极管,⾼频射频放⼤60m -10m -40 50M 30-250 3AG95A 2SA1040硅PNP三极管100 -120 60M2SA1041硅PNP三极管100 -120 60M2SA1042硅PNP三极管100 -70 60M2SA1044硅PNP三极管150 -70 60M2SA1045硅PNP三极管100 -1002SA1046硅PNP三极管100 -1002SA1047硅PNP三极管 1 -80m -160 130M 3CA3F 2SA1048TOSHIBA 硅PNP三极管,低噪声⾳频放⼤，配对管2SC2458200m -150m -50 -50 80M 70-400 3CK14H 2SA1048L TOSHIBA 硅PNP三极管,低噪声⾳频放⼤，配对管2SC2458200m -150m -50 -50 80M 70-400 3CK14H 2SA1049TOSHIBA 硅PNP三极管,放⼤，配对管2SC2459200m -100m -120 -120 100M 200-700 3CG180F 2SA105锗PNP三极管35m -10m -6 75M 3AG53C 2SA1050TOSHIBA 停产，⽤2SA1942代替100 1402SA1050A TOSHIBA 停产，⽤2SA1942代替120 1402SA1051TOSHIBA 停产，⽤2SA1943代替150 1502SA1051A TOSHIBA 停产，⽤2SA1943代替150 1602SA1052HITACHI硅PNP三极管,低频放⼤150 -100m -30 -30 100-500 3CG120A 2SA1052B HITACHI硅PNP三极管,低频放⼤150 -100m -30 -30 100-200 3CK14F 2SA1052C HITACHI硅PNP三极管,低频放⼤150 -100m -30 -30 180-320 3CK14F2SA1052D HITACHI硅PNP三极管,低频放⼤150 -100m -30 -30 250-500 3CK14F 2SA1053硅PNP三极管-200m -40 403CK3F 2SA1054硅PNP三极管-600m -60 3CK9D 2SA1055硅PNP三极管-200m -25 3CK3B 2SA1056硅PNP三极管-600m -40 3CK9C 2SA1059硅PNP三极管,对称孪⽣三极管250m -30m 202SA106锗PNP三极管35m -10m -6 30M 3AG53A 2SA1060硅PNP三极管60 -802SA1061PANASONIC 硅PNP三极管,功率⾳频放⼤，配对管2SC248570 -6 -100 -100 20M 20-2202SA1062PANASONIC 硅PNP三极管,功率⾳频放⼤，配对管2SC248680 -7 -120 -120 20M 20-2202SA1063硅PNP三极管80 -1502SA1064PANASONIC 硅PNP三极管,功率⾳频放⼤，配对管2SC2488100 -8 -150 -150 50M 20-2802SA1065PANASONIC 硅PNP三极管,功率⾳频放⼤，配对管2SC2489120 -10 -150 -150 50M 30-2802SA1066硅PNP三极管500m -200m -70 120M 3CG20C 2SA1067硅PNP三极管100 -120 402SA1068硅PNP三极管100 -150 402SA1069NEC 硅PNP三极管,功率管30 -5 -80 -60 40-200 3CA8D 2SA1069A NEC 硅PNP三极管,功率管30 -5 -80 -80 40-200 3CA8D 2SA107锗PNP三极管35m -10m -6 20M 3AG53A2SA1072FUJI 硅PNP三极管,功率放⼤，开关调整，DC-DC转换，配对管2SC2522120 -12 -120 -120 45M 40-2002SA1073FUJI 硅PNP三极管,功率放⼤，开关调整，DC-DC转换，配对管2SC2523120 -12 -160 -160 45M 40-2002SA1074硅NPN三极管150 -1602SA1075FUJI 硅PNP三极管,功率放⼤，开关调整，DC-DC转换，配对管2SC2525120 -12 -120 -120 45M 40-2002SA1076FUJI 硅PNP三极管,功率放⼤，开关调整，DC-DC转换，配对管2SC2526120 -12 -160 -160 45M 40-2002SA1077FUJI 硅PNP三极管,功率放⼤，开关调整，DC-DC转换，配对管2SC252760 -10 -120 -120 30M 40-2002SA1078FUJI 硅PNP三极管,功率放⼤，开关调整，DC-DC转换，配对管2SC252825 -2 -120 -120 140M 50-350 3CA10F2SA1079硅PNP三极管25 -160 3CA10F 2SA108锗PNP三极管80m -10m -20 45M 3AG54B 2SA1080FUJI硅PNP三极管,⾼速功率管，配对管2SC253020 -500m -40 -40 30M 100-350 CA73-2B 2SA1081HITACHI硅PNP三极管,低频放⼤，配对管2SC2543400m -100m -90 -90 90M 250-800 3CG170B 2SA1081D HITACHI硅PNP三极管,低频放⼤，配对管2SC2543400m -100m -90 -90 90M 250-800 3CG180E 2SA1081E HITACHI硅PNP三极管,低频放⼤，配对管2SC2543400m -100m -90 -90 90M 250-800 3CG180E 2SA1082HITACHI硅PNP三极管,低频放⼤，配对管2SC2544400m -100m -120 -120 90M 250-800 3CG170C 2SA1082D HITACHI硅PNP三极管,低频放⼤，配对管2SC2544400m -100m -120 -120 90M 250-800 3CG180E2SA1082E HITACHI硅PNP三极管,低频放⼤，配对管2SC2544400m -100m -120 -120 90M 250-800 3CG180E2SA1083HITACHI硅PNP三极管,⾼频低噪声放⼤，配对管2SC2545400m -100m -60 -60 90M 250-800 3CG120B 2SA1083D HITACHI硅PNP三极管,⾼频低噪声放⼤，配对管2SC2545400m -100m -60 -60 90M 250-800 3CG180E 2SA1083E HITACHI 硅PNP三极管,⾼频低噪声放⼤，配对管2SC2545400m -100m -60 -60 90M 250-800 3CG180E 2SA1084HITACHI硅PNP三极管,⾼频低噪声放⼤，配对管2SC2546400m -100m -90 -90 90M 250-800 3CG170B 2SA1084D HITACHI硅PNP三极管,⾼频低噪声放⼤，配对管2SC2546400m -100m -90 -90 90M 250-800 3CG180E 2SA1084E HITACHI硅PNP三极管,⾼频低噪声放⼤，配对管2SC2546400m -100m -90 -90 90M 250-800 3CG180E 2SA1085HITACHI硅PNP三极管,⾼频低噪声放⼤，配对管2SC2547400m -100m -120 -120 90M 250-800 3CG170C 2SA1085D HITACHI硅PNP三极管,⾼频低噪声放⼤，配对管2SC2547400m -100m -120 -120 90M 250-800 3CG180F 2SA1085E HITACHI硅PNP三极管,⾼频低噪声放⼤，配对管2SC2547400m -100m -120 -120 90M 250-800 3CG180F2SA109锗PNP三极管80m -10m -20 30M 3AG54A 2SA1090TOSHIBA 停产300m -200m -60 150M 3CG180E2SA1091TOSHIBA 硅PNP三极管,电压控制，配对管2SC2561400m -100m -300 -300 40M 20-150 3CG180H 2SA1092硅PNP三极管250m -50m -60 3CG160A2SA1093TOSHIBA 停产，⽤2SA1941代替,硅PNP,电压控制，配对管2SC256380 -8 -120 -120 90M 30-240 3CA4C2SA1094TOSHIBA 停产，⽤2SA1942代替,硅PNP,放⼤，配对管2SC2564120 -12 -140 -140 90M 30-2402SA1095TOSHIBA 停产，⽤2SA1943代替,硅PNP,放⼤，配对管2SC2565150 -15 -160 -160 60M 40-2402SA1096PANASONIC 硅PNP三极管,低频功率放⼤，配对管2SC2497 5 -1.5 -70 -50 150M 80-2202SA1096A PANASONIC 硅PNP三极管,低频功率放⼤，配对管2SC2497A 5 -1.5 -70 -60 150M 80-2202SA110锗PNP三极管80m -10m -20 30M 3AG54A 2SA1100硅PNP三极管300m -200m -50 200M 3CK14F 2SA1100L硅PNP 三极管300m -200m -50 200M 3CK14F 2SA1102WS 硅PNP三极管,放⼤，DC-DC转换，配对管2SC257780 -8 -160 -12020M 50-1602SA1103WS 硅PNP三极管,放⼤，DC-DC转换，配对管2SC257870 -7 -100 -100 20M 80-1602SA1104WS 硅PNP三极管,放⼤80 -8 -120 -120 20M 50-2502SA1105WS 硅PNP三极管,放⼤，DC-DC转换，配对管2SC257790 -9 -160 -120 20M 50-1602SA1106WS 硅PNP三极管,放⼤，DC-DC转换，配对管2SC2581100 -10 -200 -140 20M 50-1602SA1109硅NPN三极管2002SA111锗PNP三极管80m -10m -20 20M 3AG54A 2SA1110PANASONIC 硅PNP三极管,低频功率放⼤，配对管2SC2590 1.2 -500m -120 -120 200M 50-330 3CA3F 2SA1111硅PNP三极管20 -1 -150 200M 3CA10E 2SA1112硅PNP三极管20 -1 -180 200M 3CA10F 2SA1114硅PNP三极管500m -200m -70 -70 150M 1200 3CG130C 2SA1114A硅PNP三极管300m -200m -70 150M 3CK10C 2SA1115MIS 硅PNP三极管,低频功率放⼤300m -200m -50 -50 200M 50-800 3CK9D 2SA1116MIS 硅PNP三极管,低频功率放⼤,配对管2SC2607150 -15 -200 -200 20M 30 3CA1C 2SA1116A MIS 硅PNP三极管,低频功率放⼤,配对管2SC2607750m -1 -80 120M 3CA1C 2SA1117硅PNP三极管200 -200 20M2SA1119长电硅PNP三极管,宽⽚带放⼤管500m -1 -25 -25 180M 40-5602SA112锗PNP三极管80m -10m -20 20M 3AG54A 2SA1120TOSHIBA 停产，⽤2SA1357代替 1 -5 -35 170M 3CK10C2SA1121HITACHI硅PNP三极管,低频放⼤，配对管2SC2618150m -500m -35 -35 10-320 3CA1B 2SA1121SB HITACHI硅PNP三极管,低频放⼤，配对管2SC2618150m -500m -35 -35 10-320 3CK9C 2SA1121SC HITACHI硅PNP三极管,低频放⼤，配对管2SC2618150m -500m -35 -35 10-320 3CK9C 2SA1121SD HITACHI硅PNP三极管,低频放⼤，配对管2SC2618150m -500m -35 -35 10-320 3CK9C 2SA1122HITACHI硅PNP三极管,低频放⼤150m -100m -55 -55 160-8003CG120B 2SA1122CC HITACHI硅PNP三极管,低频放⼤150m -100m -55 -55 160-800 3CK9D 2SA1122CD HITACHI硅PNP 三极管,低频放⼤150m -100m -55 -55 160-800 3CK9D 2SA1122CE HITACHI硅PNP三极管,低频放⼤150m -100m -55 -55 160-800 3CK9D 2SA1123PANASONIC 硅PNP三极管,⾼频⾼击穿电压放⼤，配对管2SC2631750m -50m -150 -150 200M 130-450 3CG180G 2SA1124PANASONIC 硅PNP三极管,⾼频⾼击穿电压放⼤，配对管2SC2632 1 -50m -150 -150 200M 130-450 3CG180G 2SA1125硅PNP三极管 1.5 -50m -150 200M 3CG180G 2SA1126硅PNP三极管750m -100m -650 15M3CG180 2SA1126H硅PNP三极管750m -100m -650 15M 3CG180 2SA1127PANASONIC 硅PNP三极管,⾼频和低噪声放⼤，配对管2SC2634400m -100m -60 -55 200M 180-700 3CG120B 2SA1127NC PANASONIC 硅PNP三极管,⾼频和低噪声放⼤，配对管2SC2634400m -100m -60 -55 200M 180-700 3CK9D 2SA1128PANASONIC 硅PNP三极管,低频放⼤600m -0.5 -25 -20 150M 25-220 3CK9B 2SA113锗PNP三极管50m -10m -34 20M 3AG95A 2SA1131硅PNP三极管150m -150m -5080M 3CG160A 2SA1132长电硅PNP三极管150m -100m -120 100M 3CG160C 2SA1133硅PNP三极管30 -2 -200 3CA10F2SA1134硅PNP三极管500m -2 -30 140M 3CK10A2SA1135MSI 硅PNP三极管,放⼤，配对管2SC266555 -4 -80 -80 10M 40 3CD6C 2SA1138硅PNP三极管600m -10m -80 -80 50M 200 3CG120C 2SA114锗PNP三极管50m -10m -34 20M 3AG95A 2SA1141MSI 硅PNP三极管,功率放⼤，配对管2SC2681100 -10 -115 -115 180M 40-2002SA1142NEC 硅PNP三极管,功率放⼤，配对管2SC268210 -100m -180 -180 180M 90-320 3CA5F 2SA1144TOSHIBA 停产，⽤2SA1360代替10 -50m -150 200M 3CA5F 2SA1145TOSHIBA 硅PNP三极管,放⼤，配对管2SC2705800m -50m -150 -150 200M 80-2402SA1146TOSHIBA 停产，⽤2SA1941代替100 -140 70M2SA1148硅PNP三极管95 -15 -602SA115锗PNP三极管50m -10m -34 20M 3AG95A 2SA1150TOSHIBA 硅PNP三极管,低频放⼤，配对管2SC2710300m -800m -35 -30 120M 35-320 3CK9C 2SA1151NEC 硅PNP,达林顿管250m -100m 180M 3CK9C 2SA1152NEC 硅PNP,达林顿管600m -300m 100M 3CK9C 2SA1153NEC 硅PNP三极管,⼀般放⼤和⾼速开关600m -500m -60 -40 150M 20-300 3CG122C 2SA1154NEC 硅PNP三极管,⼀般放⼤和⾼速开关800m -700m -60 -40 120M 20-300 3CK9D2SA1156NEC 硅PNP三极管,功率⾼电压开关，DC-DC转换，配对管2SC275210 -1 -400 -400 150M 30-2002SA1158TOSHIBA 停产，⽤2SA970代替400m -100m -80 100M 3CG180A 2SA116锗PNP三极管50m -10m -30 120M3AG53D 2SA1160长电硅PNP三极管,TO-92，放⼤900m -2 -20 140M 3CK10A 2SA1160N TOSHIBA 硅PNP三极管,功率放⼤900m -2 -20 -10 140M 60-600 3CK10A 2SA1162硅PNP三极管150m -150m -50 80M 3CK14F 2SA1163TOSHIBA 硅PNP 三极管,⼀般⾳频放⼤，配对管2SC2713150m -100m -120 -120 100M 200-700 3CG170A 2SA1164TOSHIBA 停产200m -100m -35 400M 3CG122C 2SA1169A硅PNP三极管 1.3 -1 -80 40M 3CA3 2SA117锗PNP三极管50m -10m -30 110M3AG53D 2SA1170Q ETC 硅PNP三极管,功率放⼤,配对管2SC2774200 -17 -200 -200 20M 20 3CA3 2SA1170R ETC 硅PNP 三极管,功率放⼤,配对管2SC2774200 -17 -200 -200 20M 20 3CA3 2SA1171HITACHI硅PNP三极管,⾼频⼩信号放⼤150m -50m -90 -90 200m 250-800 3CA3 2SA1171A HITACHI硅PNP三极管,⾼频⼩信号放⼤150m -50m -90 -90 200m 250-8003CA3 2SA1171AP HITACHI硅PNP三极管,⾼频⼩信号放⼤150m -50m -90 -90 200m 250-800 3CA3 2SA1171PD HITACHI 硅PNP三极管,⾼频⼩信号放⼤150m -50m -90 -90 200m 250-800 3CG160B 2SA1171PE HITACHI硅PNP三极管,⾼频⼩信号放⼤150m -50m -90 -90 200m 250-800 3CG160B 2SA1173硅PNP三极管 2 -50 -140 80M 3CA3E。

2SK439中文资料

2SK439Silicon N-Channel MOS FETApplicationVHF amplifierOutline2SK4392Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Drain to source voltage V DS 20V Gate to source voltage V GSS ±5V Drain current I D 30mA Gate currentI G ±1mA Channel power dissipation Pch 300mW Channel temperature Tch 150°C Storage temperatureTstg–55 to +150°CElectrical Characteristics (Ta = 25°C)ItemSymbol Min Typ Max Unit Test conditions Drain to source breakdown voltageV (BR)DSX 20——V I D = 100 µA, V GS = –4 V Gate cutoff current I GSS ——±20nA V GS = ±5 V, V DS = 0Drain currentI DSS *14—12mA V DS = 10 V, V GS = 0Gate to source cutoff voltage V0—–2.0V V = 10 V, I = 10 µA Input capacitanceCiss — 2.5—pF V DS = 10 V, V GS = 0, f = 1 MHzReverse transfer capacitance Crss —0.03—pF Output capacitance Coss — 1.8—pF V DS = 5 V, V GS = 0, f = 1 MHz Power gain PG —30—dB V DS = 10 V, V GS = 0,f = 100 MHz Noise figure NF— 2.0—dBNote: 1.The 2SK439 is grouped by I DSS as follows.Grade D E F I DSS4 to 86 to 108 to 12See characteristic curves of 2SK359.2SK4393Unit: mmCautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。

si9424dy 硅功率晶体管--数据表说明书

Gate Charge 5
VDS = 6 V
4
ID = 7.7 A
3
2
1
C – Capacitance (pF)
12
6
0 0
7000 6000 5000 4000 3000 2000 1000
0 0
TC = 125_C 25_C
–55_C
0.5
1.0
1.5
2.0
2.5
VGS – Gate-to-Source Voltage (V)
VDS = –6 V, VGS = –4.5 V, ID = –7.7 A VDD = –6 V, RL = 6 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W IF = –2.3 A, di/dt = 100 A/ms
MIN TYPA MAX UNIT
–0.6
V
"100
nA
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70164.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S
Qg Qgs Qgd td(on)
tr td(off)
tf trr
Notes A. Guaranteed by design, not subject to production testing.

2SK3934中文资料

1: Gate 2: Drain 3: Source
Unit V V V
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
20
400
60
VDS VDD = 100 V 400V
16
300
12
40
200V 200 VGS 100 COMMON SOURCE ID = 15 A Tc = 25°C PULSE TEST 0 0 20 40 60 80 0 100 4 8
20
0 0
40
80
120
1பைடு நூலகம்0
CASE TEMPERATURE Tc ( °C)
Marking
K3934
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2004-12-03
元器件交易网
2SK3934
TOTAL GATE CHARGE Q g (nC)
4
2004-12-03
元器件交易网
2SK3934
r th – tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
Tc = 25°C
30 Tc = 100°C 20 Tc = − 55°C

2SA系列三极管参数

FJL4215OTU;2SA1943OTU;2SA1943RTU;中文规格书,Datasheet资料

2SA1943/FJL4215 — PNP Epitaxial Silicon TransistorJanuary 20092SA1943/FJL4215PNP Epitaxial Silicon TransistorApplications•High-Fidelity Audio Output Amplifier •General Purpose Power AmplifierFeatures•High Current Capability: I C = -17A.•High Power Dissipation : 150watts.•High Frequency : 30MHz.•High Voltage : V CEO = -250V•Wide S.O.A for reliable operation.•Excellent Gain Linearity for low THD.•Complement to 2SC5200/FJL4315.•Full thermal and electrical Spice models are available.•Same transistor is also available in:-- TO3P package, 2SA1962/FJA4213 : 130 watts -- TO220 package, FJP1943 : 80 watts -- TO220F package, FJPF1943 : 50 wattsAbsolute Maximum Ratings* T a= 25°C unless otherwise noted* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.Thermal Characteristics* T a=25°C unless otherwise noted* Device mounted on minimum pad sizeh FE ClassificationSymbolParameter RatingsUnitsBV CBO Collector-Base Voltage -250V BV CEO Collector-Emitter Voltage -250V BV EBO Emitter-Base Voltage -5V I C Collector Current -17A I B Base Current-1.5A P D Total Device Dissipation(T C =25°C)Derate above 25°C1501.04W W/°C T J , T STGJunction and Storage Temperature- 50 ~ +150°CSymbolParameterMax.UnitsR θJCThermal Resistance, Junction to Case0.83°C/WClassificationROh FE155 ~ 11080 ~ 1601.Base2.Collector3.Emitter1TO-2642SA1943/FJL4215 — PNP Epitaxial Silicon TransistorElectrical Characteristics* T a=25°C unless otherwise noted* Pulse Test: Pulse Width=20µs, Duty Cycle ≤2%Ordering InformationSymbolParameterTest ConditionMin.Typ.Max.UnitsBV CBO Collector-Base Breakdown Voltage I C =-5mA, I E =0-250V BV CEO Collector-Emitter Breakdown Voltage I C =-10mA, R BE =∞-250V BV EBO Emitter-Base Breakdown Voltage I E =-5mA, I C =0-5VI CBO Collector Cut-off Current V CB =-230V, I E =0-5.0µA I EBO Emitter Cut-off Current V EB =-5V, I C =0-5.0µAh FE1DC Current Gain V CE =-5V, I C =-1A 55160h FE2DC Current GainV CE =-5V, I C =-7A 3560V CE (sat)Collector-Emitter Saturation Voltage I C =-8A, I B =-0.8A -0.4-3.0V V BE (on)Base-Emitter On Voltage V CE =-5V, I C =-7A -1.0-1.5V f T Current Gain Bandwidth Product V CE =-5V, I C =-1A 30MHz C obOutput CapacitanceV CB =-10V, f=1MHz360pFPart NumberMarkingPackagePacking MethodRemarks2SA1943RTU A1943R TO-264TUBE hFE1 R grade 2SA1943OTU A1943O TO-264TUBE hFE1 O grade FJL4215RTU J4215R TO-264TUBE hFE1 R grade FJL4215OTUJ4215OTO-264TUBEhFE1 O grade2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor2SA1943/FJL4215 PNP Epitaxial Silicon Transistor2SA1943/FJL4215分销商库存信息:FAIRCHILDFJL4215OTU2SA1943OTU2SA1943RTU。

2S系列晶体管资料速查

2SC2166三菱μA)001002SC2640东芝0022SC2941日电μA)000.52SC3147东芝10002SC3629三菱μA)002002SC4013罗姆μA)000.52SC4253东芝μA)000.12SC4526三菱0032SC4856三洋μA)0012SC5006日电μA)0012SC941TM东芝μA)000.1Vebo(V)00Vce=10V, Ic=ft(MHz)Vebo(V)00Vce=10V, Ic=ft(MHz) Veb=4V, Ic=0Vcb=25V, Ie=Vebo(V)00.5Veb=3V, Ic=0hfeVeb=10V, Ie=Vebo(V)0300Vce=5V, Ic=1hfe比*Vebo(V)80200Vce=10V, Ic=hfe比* Veb=2V, Ic=0ft(MHz) Vcb=-10V, Ie Vebo(V)0500Vce=-10V, Ic=Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vce=10V, Ic=Vebo(V)5500Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)5500Vce=10V, Ic=Cre(pF) Vcb=-12V Vebo(V)250560Vce=-2V, Ic=ft(MHz) Vce=10V, Ic=Vebo(V)10Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 1.10Vce=10V, Ic=Cob(pF) Vce=6V, Ic=1Vebo(V)5500Vce=6V, Ic=1Cre(pF) Veb=2V, Ic=0Vebo(V)0300Vce=5V, Ic=1hfe比*Vebo(V)0300Vce=5V, Ic=1hfe比* Veb=2V, Ic=0Veb=2V, Ic=0Vebo(V)80200Vce=10V, Ic=hfe比*Vebo(V)80200Vce=10V, Ic=hfe比* Veb=2V, Ic=0Vcb=30V, Ie=Vebo(V)0100Veb=4V, Ic=0hfeVcb=25V, Ie=Vebo(V)01Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)01Veb=3V, Ic=0hfehfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0Vcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfehfeVcb=15V, Ie=Vebo(V)0100Veb=2.5V, Ic=Vcb=15V, Ie=Vebo(V)0200Veb=2V, Ic=0hfeVcb=15V, Ie=Vebo(V)0400Veb=2V, Ic=0hfeVcb=15V, Ie=Vebo(V)0400Veb=2V, Ic=0hfehfeVcb=30V, Ie=Vebo(V)0100Veb=4V, Ic=0Vcb=25V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVce=10V, Ic=Vebo(V) 2.20Vce=10V, Ic=Cob(pF) Vcb=15V, Ie=Vebo(V)020Veb=3V, Ic=0hfehfeVcb=10V, Ie=Vebo(V)030Veb=3V, Ic=0Vcb=10V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeVcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=40V, Ie=Vebo(V)0200Vce=5V, Ic=0ft(MHz) Vcb=35V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)50180Vce=10V, Ic=IMD(dB)hfeVcb=25V, Ie=Vebo(V)04Veb=2V, Ic=0Vce=5V, Ic=5Vebo(V)1000Vce=5V, Ic=0Cob(pF)hfeVcb=25V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeVcb=35V, Ie=Vebo(V)01Veb=3V, Ic=0Vcb=35V, Ie=Vebo(V)02Veb=3V, Ic=0hfeVce=10V, Ic=Vebo(V)30Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cob(pF) Vce=8V, Ic=1Vebo(V)60Vce=8V, Ic=1Cob(pF) Vcb=30V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeft(MHz) Vcb=20V, Ie=Ic(A)60200Vce=7V, Ic=0Cob(pF)hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0Vcb=5V, Ic=1Vebo(V)0500Vcb=12V, Ie=PG(dB) Vcb=10V, Ie=Vebo(V)0220Vcb=10V, Ie=ft(MHz) Vcb=40V, Ie=Vebo(V)0320Vce=5V, Ic=5ft(MHz) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=10V, Ie=Vebo(V)100200Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Vebo(V)00Vce=3V, Ic=8ft(MHz) Vcb=10V, Ic=Vebo(V)6500Vce=10V, Ic=Cre(pF) Vcb=15V, Ie=Vebo(V)00Vce=3V, Ic=2ft(MHz) Vce=10V, Ic=Vebo(V) 4.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)8500Vce=10V, Ie=Cre(pF) Vcb=10V, Ie=Vebo(V) 1.1 1.4Ie=-3mA, f=2Cob(pF) Vce=8V, Ic=2Vebo(V)80Vce=8V, Ic=2Cob(pF) Vce=20V, Ib=Vebo(V)0260Vcb=6V, Ie=-ft(MHz) Vce=5V, Ic=1Vebo(V)2000Vce=5V, Ic=1Cob(pF) Vcb=6V, Ie=-Vebo(V)6500Ie=-1mA, f=1Cre(pF) Vcb=20V, Ie=Vebo(V)00.5Veb=2V, Ic=0hfeVcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz) Vcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vce=10V, Ic=Vebo(V)9000Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)5500Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 2.20Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)9000Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)00Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)00Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)20Vce=10V, Ic=Cob(pF) Vcb=10V, Ie=Vebo(V) 1.2 1.6Ie=-15mA, f=Cre(pF) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)40Vce=10V, Ic=Cob(pF) Vce=5V, Ic=1Vebo(V)450600Vcb=28V, Ie=PG(dB) Vce=10V, Ic=Vebo(V)9000Vce=10V, Ic=Cc．rbb' Vcb=15V, Ie=Vebo(V)0200Veb=3V, Ic=0hfehfeVcb=25V, Ie=Vebo(V)01000Veb=3V, Ic=0hfeVcb=15V, Ie=Vebo(V)02Veb=3V, Ic=0Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=10V, Ie=Vebo(V)0200Vce=10V, Ic=ft(GHz) Veb=1V, Ic=0Vebo(V)150300Vce=8V, Ic=7ft(GHz)Vebo(V)60200Vce=10V, Ic=Cob(pF) Veb=2V, Ie=0Vcb=35V, Ie=Vebo(V)04Veb=3V, Ic=0hfeVce=12V, Ic=Vebo(V)2300Vce=12V, Ic=Cob(pF) Vce=6V, Ic=1Vebo(V)9400Vce=6V, Ic=5Cob(pF)hfeVcb=25V, Ie=Vebo(V)01Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)02Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)03Veb=3V, Ic=0Vcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0hfeVcb=10V, Ie=Vebo(V) 1.2 1.6Ie=-15mA, f=Cre(pF) Vcb=15V, Ie=Vebo(V)00Vcb=5V, Ic=1Cob(pF) Vcb=15V, Ie=Vebo(V)00Vcb=5V, Ic=1Cob(pF)Vcb=15V, Ie=Vebo(V)00Vcb=5V, Ic=5Cob(pF)Vcb=15V, Ie=Vebo(V)00Vce=5V, Ic=1Cob(pF)Vcb=15V, Ie=Vebo(V)00Vce=5V, Ic=3Cob(pF)Vce=5V, Ic=5Vebo(V)40Vce=10V, Ic=Cob(pF)Vcb=10V, Ie=Vebo(V)2300Ie=-1mA, f=2Cre(pF)Vce=5V, Ic=1Vebo(V)3000Vcb=50V, Ie=PG(dB)Vce=6V, Ic=1Vebo(V)5500Vce=6V, Ic=1Cre(pF)Vcb=35V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Vcb=35V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Vce=8V, Ic=4Vebo(V) 5.50Ic=40mA, f=8Cob(pF)Vce=10V, Ic=Vebo(V) 4.50Ie=-20mA, f=Cob(pF)Vcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0hfeVcb=15V, Ie=Vebo(V)03Veb=3V, Ic=0hfeVce=6V, Ic=1Vebo(V)5500Vce=6V, Ic=1Cre(pF)Vcb=35V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Vcb=35V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Vcb=30V, Ie=Vebo(V)0240Vce=12.5V, Icft(MHz)Vcb=30V, Ie=Vebo(V)0300Vce=6V, Ic=1ft(MHz)Vce=4V, Ic=2Vebo(V)00Vce=4V, Ic=2Cre(pF)Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V)10Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V)10Vce=10V, Ic=Cre(pF)Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V) 1.20Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V) 2.20Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V)8500Ic=10V, Ie=-5Cre(pF)Vce=10V, Ic=Vebo(V) 1.10Vce=10V, Ie=Cob(pF)Vce=10V, Ic=Vebo(V)10Vce=10V,Ie=Cob(pF)Vce=10V, Ic=Vebo(V)20Vce=10V, Ie=Cob(pF)Vcb=20V, Ie=Ic(A)00.1Veb=2V, Ic=0hfeVce=6V, Ic=1Vebo(V)3200Vce=6V, Ic=1Cob(pF)Vcb=10V, Ie=Vebo(V)2300Ie=-1mA, f=2Cre(pF)Vce=5V, Ic=1Vebo(V)0320Vcb=12V, Ie=Vce=5V, Ic=5Vebo(V)110150Vcb=12V, Ie=Vce=6V, Ic=1Vebo(V)6000Vce=6V, Ie=-Cob(pF)Vce=6V, Ic=1Vebo(V)2500Vce=6V, Ie=-Cob(pF)Vcb=25V, Ie=Vebo(V)0200Veb=3V, Ic=0hfehfeVcb=25V, Ie=Vebo(V)0400Veb=3V, Ic=0Vcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfehfeVcb=25V, Ie=Vebo(V)01Veb=3V, Ic=0Vebo(V)150300Vce=8V, Ic=2ft(GHz) Veb=2V, Ic=0Ic(A)60250Vce=10V, Ic=ft(GHz) Veb=2V, Ic=0Vce=6V, Ic=1Vebo(V)3200Vce=6V, Ic=1Cre(pF)Vce=6V, Ic=1Vebo(V)3200Vce=6V, Ic=1Cre(pF)Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF)Vcb=20V, Ie=Vebo(V)50Vce=13.5V, Icft(GHz)Vcb=5V, Ic=1Vebo(V)7000Vcb=12V, Ie=PG(dB)Vcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0hfehfeVcb=15V, Ie=Vebo(V)03Veb=3V, Ic=0Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz)Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz)hfeVcb=15V, Ie=Vebo(V)02Veb=2V, Ic=0hfeVcb=15V, Ie=Vebo(V)03Veb=2V, Ic=0Vcb=15V, Ie=Ic(mA)0200Vce=8V, Ic=1ft(GHz)ft(GHz) Vcb=20V, Ie=Vebo(V)500Vce=13.5V, IcVcb=30V,Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vce=6V, Ic=1Vebo(V)3500Vce=6V, Ic=1Cre(pF) Vce=6V, Ic=1Vebo(V)3500Vce=6V, Ic=1Cre(pF) Vce=6V, Ic=1Vebo(V)7500Vce=6V, Ic=1Cre(pF) Vce=6V, Ic=1Vebo(V)3200Vce=6V, Ic=1Cre(pF)hfeVcb=10V, Ie=Vebo(V)0500Veb=2V, Ic=0Vcb=15V, Ie=Vebo(V)00Vce=5V, Ic=0Cob(pF) Vce=5V, Ic=1Vebo(V) 6.50Vce=5V, Ic=1Cob(pF) Vce=4V, Ic=5Vebo(V) 1.450Vce=4V, Ic=5Cob(pF)hfeVcb=10V, Ie=Vebo(V)0200Veb=2V, Ic=0Vcb=10V, Ie=Vebo(V)0300Veb=2V, Ic=0hfeVcb=15V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=15V, Ie=Vebo(V)0300Veb=3V, Ic=0hfehfeVcb=15V, Ie=Vebo(V)0500Veb=3V, Ic=0Vcb=15V, Ie=Vebo(V)03Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=10V, Ie=Vebo(V) 1.1 1.4Ie=-3mA,f=20Cob(pF) Vcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Ic(mA)0200Vce=8V, Ic=5ft(GHz) Vcb=15V, Ie=Ic(mA)0200Vce=8V, Ic=1ft(GHz) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)40Vce=10V, Ic=Cob(pF) Vcb=15V, Ie=Vebo(V)0300Veb=2V, Ic=0hfehfeVcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0hfeVcb=10V, Ie=Vebo(V)0300Veb=2V, Ic=0hfeVcb=10V, Ie=Vebo(V)0500Veb=2V, Ic=0Vcb=15V, Ie=Vebo(V)05Veb=2V, Ic=0hfeVce=10V, Ic=Vebo(V) 4.50Ic=10mA, f=8Cob(pF) Vebo(V) 2.40Vce=10V, Ic=Cre(pF) Vce=10V,Ic=5Vcb=15V, Ie=Vebo(V)150320Vce=3V, Ic=8ft(GHz) Vce=10V, Ic=Vebo(V)6500Vce=10V, Ic=Cre(pF)ft(GHz) Vcb=25V, Ie=Vebo(V)150300Vce=10V,Ic=5Vcb=15V, Ie=Vebo(V)100200Vce=3V,Ic=8mft(GHz) Vcb=30V, Ie=Vebo(V)70200Vce=10V, Ic=ft(MHz) Vce=5V, Ic=2Vebo(V) 4.50Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V) 4.50Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V) 4.50Vce=2V, Ic=2Cob(pF) Vce=4V, Ic=5Vebo(V) 1.9 2.5Ie=-5mA, f=2Cob(pF) Vcb=30V, Ie=Vebo(V)50150Vce=12V, Ic=PG(dB) Vcb=25V, Ie=Vebo(V)150300Vce=10V, Ic=ft(GHz) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vce=6V, Ic=1Vebo(V)7500Vce=6V, Ic=4Cre(pF)Vce=5V, Ic=5Vebo(V)0330Vcb=12V, Ie=hfeVcb=15V, Ie=Vebo(V)05Veb=2V, Ic=0hfeVcb=25V, Ie=Vebo(V)04Veb=2V, Ic=0Vce=10V, Ic=Ic(mA)50Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)50200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)50200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60150Vce=10V, Ic=Cre(pF) Vce=10V, Ie=Vebo(V)2500Ie=-1mA, f=2Cre(pF) Vce=10V, Ic=Vebo(V)3000Ie=-1mA, f=2Cre(pF) Vcb=6V, Ie=-Vebo(V)6500Ie=-1mA, f=2Cre(pF) Vce=5V,Ic=50Vebo(V) 4.40Vce=5V, Ic=5Cob(pF)Vebo(V) 4.50Vce=5V, Ic=2Cob(pF) Vce=5V,Ic=20Vcb=10V, Ie=Vebo(V) 1.2 1.6Ie=-15mA, f=Cre(pF) Vce=10V, Ic=Vebo(V) 6.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 6.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)5500Vce=10V, Ic=Cre(pF)hfeVcb=10V, Ie=Vebo(V)0300Veb=2V, Ic=0Vcb=18V, Ie=Vebo(V)0320Vce=12V,Ic=2ft(MHz) Vce=6V, Ic=1Vebo(V)9400Vce=6V, Ic=5Cob(pF) Vcb=10V, Ie=Vebo(V)0200Veb=2V, Ic=0hfeVcb=20V, Ie=Ic(A)0200Vce=10V, Ic=Cob(pF) Vcb=18V, Ie=Vebo(V)0500Vce=12V, Ic=ft(MHz) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cob(pF) Vce=4V, Ic=2Vebo(V)00Vce=4V, Ic=2Cre(pF) Vce=12V, Ic=Vebo(V)2300Vce=12V, Ic=Cob(pF) Veb=2V, Ic=0Vebo(V)60200Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF) Vce=5V, Ic=2Vebo(V) 4.50Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V)60Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V)60Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V)60Vce=5V, Ic=2Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)20Vce=10V, Ie=Cre(pF) Vce=10V, Ic=Vebo(V)20Ic=10V, Ie=-5Cre(pF) Vcb=10V, Ie=Vebo(V)0130Vce=10V, Ic=ft(GHz) Vcb=10V, Ie=Vebo(V)0300Vce=10V, Ic=ft(GHz) Vcb=10V, Ie=Vebo(V)100250Vce=8V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0250Vce=8V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)100250Vce=6V, Ic=1ft(GHz) Vce=6V, Ic=1Vebo(V)100Vce=6V, Ic=1Cre(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cre(pF) Vce=8V, Ic=2Vebo(V)80Vce=8V, Ic=2Cre(pF) Vce=10V, Ic=Vebo(V) 6.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Ic(mA) 6.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cob(pF)hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=10V, Ie=Vebo(V)0200Veb=2V, Ic=0hfeVce=5V, Ic=5Vebo(V) 1.20Vce=5V, Ic=1Cob(pF) Vcb=30V, Ie=Ic(A)60100Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60100Vce=10V, Ic=Cob(pF) Vebo(V)40Vce=1V, Ic=1|S21e| * Vce=1V, Ic=2μAVce=8V, Ic=2Vebo(V)60Ic=20mA, f=8Cob(pF) Vce=1V, Ic=1Vebo(V)40Ic=1mA, f=80Cob(pF) Vce=5V, Ic=1Vebo(V) 6.50Vce=5V, Ic=1Cob(pF) Vce=10V, Ic=Vebo(V) 1.20Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 2.20Vce=10V,Ic=5Cre(pF) Vce=10V, Ic=Vebo(V)30Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)30Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)0.8 1.1Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 2.90Vce=10V, Ic=Cob(pF) Vcb=25V Vebo(V)0270Vce=10V,Ic=4ft(GHz) Vcb=25V Vebo(V)0270Vce=10V, Ic=ft(GHz)hfeVcb=15V, Ie=Vebo(V)05Veb=2V, Ic=0Veb=1V, Ic=0Vebo(V)0250Vce=10V, Ic=hfe比* Vcb=35V,Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz) Veb=1V, Ic=0Vebo(V)100250Vce=8V, Ic=2hfe比* Vcb=30V, Ie=Ic(A)60100Vce=10V, Ic=Cob(pF) Vcb=15V, Ie=Ic(A)60200Vce=7V, Ic=0Cob(pF) Vcb=15V, Ie=Ic(A)60200Vce=7V, Ic=0Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 1.10Vce=10V, Ic=Crb(pF) Vce=8V, Ic=2Vebo(V)60Ic=20mA, f=8Cob(pF) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vce=12.5V,Ic Vebo(V)00Vce=12.5V, IcCob(pF) Vce=10V, Ic=Vebo(V)40Vce=10V, Ie=Cob(pF) Vcb=30V, Ie=Vebo(V)100200Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 3.80Vce=10V, Ic=Cob(pF) Vce=12.5V, IcVebo(V)00Vce=12.5V,Ic Cob(pF) Vce=8V, Ic=2Vebo(V)8.50Ic=20mA, f=1Cob(pF)hfeVcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0Vce=10V, Ic=Vebo(V)01Vce=10V,Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0220Vcb=10V, Ie=ft(MHz) Vcb=6V, Ie=-Vebo(V)6500Ie=-1mA, f=2Cre(pF) Vcb=10V, Ie=Vebo(V)0 1.6Ie=-15mA, f=Cre(pF) Vcb=10V, Idd Vebo(V) 1.1 1.4Ie=-3mA, f=2Cob(pF)Cob(pF) Vce=10V, Ic=Vebo(V) 4.50Ie=-10mA,f=8Vce=4V, Ic=5Vebo(V) 1.9 2.5Ie=-5mA, f=2Cob(pF) Vce=10V, Ic=Vebo(V)2300Ie=1mA, f=20Cre(pF) Vce=8V, Ic=2Vebo(V)60Ic=20mA, f=8Cob(pF) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz)Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz)ft(MHz) Vcb=24V Vebo(V)0180Vce=6V,Ic=2mVcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0180Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V,Ic=5ft(GHz) Vce=3.4V, Ic=Vebo(V) 1.50Ic=1.8mA, f=8Cob(pF) Vce=10V, Ic=Vebo(V)01Vce=10V, Ic=ft(GHz) Vce=10V, Ic=Vebo(V)01Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vce=10V, Ic=Vebo(V)60Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 6.50Vce=10V, Ic=Cre(pF) Vce=8V, Ic=2Vebo(V)90Vce=8V, Ic=2Cre(pF) Vce=6V, Ic=1Vebo(V)100Vce=6V, Ic=1Cre(pF) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=25V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vce=5V, Ic=2Vebo(V)60Vce=5V, Ic=2Cob(pF) Vcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz) Vcb=15V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=30V, Ie=Vebo(V)90180Vce=6V, Ic=1ft(MHz) Vcb=50V, Ie=Vebo(V)90180Vce=6V, Ic=1ft(MHz) Vcb=20V, Ie=Vebo(V)0220Vce=3V, Ic=5ft(GHz) Vcb=25V, Ie=Vebo(V)100240Vce=5V, Ic=2ft(GHz) Vcb=25V,Ie=Vebo(V)100200Vce=3V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)100180Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Vebo(V)0200Vce=10V, Ic=ft(GHz)ft(GHz) Veb=1V, Ic=0Vebo(V)100250Vce=1V, Ic=2μA Vce=5V, Ic=5Vebo(V) 2.40Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=5Vebo(V) 3.80Vce=5V, Ic=2Cob(pF) Vce=3V, Ic=1Vebo(V)8500Vce=3V, Ic=1Crb(pF) Vce=6V, Ic=1Vebo(V)5500Vce=6V, Ic=1Cre(pF) Veb=2V, Ic=0ft(GHz) Vebo(V)0200Vce=3V,Ic=20Vebo(V)110250Vce=3V, Ic=7ft(GHz) Veb=1V, Ic=0Vebo(V)0240Vce=3V, Ic=7ft(GHz) Veb=1V, Ic=0Vebo(V)100250Vce=3V, Ic=5ft(GHz) Veb=1V, Ic=0Vce=5V, Ic=2Vebo(V)10Vce=5V, Ic=2Cob(pF) Vce=10V, Ic=Vebo(V) 1.3 1.9Ie=-15mA, f=Cob(pF) Vce=4V, Ic=5Vebo(V)20Ie=-5mA, f=2Cob(pF) Vcb=10V, Ie=Vebo(V)0500Veb=2V, Ic=0hfeVce=3V, Ic=1Vebo(V)8500Vce=3V, Ic=1Crb(pF) Vce=10V, Ic=Vebo(V) 2.40Vce=10V, Ic=Cre(pF) Vcb=10V, Ie=Vebo(V)150320Vce=3V, Ic=8ft(GHz) Vcb=10V, Ie=Vebo(V)0130Vce=10V, Ic=ft(GHz) Vcb=10V, Ie=Vebo(V)0300Vce=10V, Ic=ft(GHz) Vce=10V, Ic=Vebo(V)6500Vce=10V, Ic=Cre(pF) Vcb=25V, Ie=Vebo(V)150300Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Vebo(V)100200Vce=3V, Ic=8ft(GHz) Vcb=20V, Ie=Vebo(V)100250Vce=10V, Ic=ft(GHz)Vcb=30V, Ie=Vebo(V)70200Vce=10V, Ic=ft(MHz)Vcb=25V, Ie=Vebo(V)50180Vce=5V, Ic=6PG(dB)Cob(pF) Vce=5V, Ic=1Vebo(V)3000Ie=-10mA, f=ft2(MHz) Vcb=15V, Ie=Vebo(V)100200Vce=5V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)100200Vce=5V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)100200Vce=5V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)100200Vce=5V, Ic=5ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz)Cob(pF) Vce=12V, Ic=Vebo(V)2300Vce=12V,Ic=2Vce=12V, Ic=Vebo(V)2300Vce=12V, Ic=Cob(pF) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Vebo(V)05000Veb=2V, Ic=0hfeVcb=10V, Ie=Vebo(V)0220Vce=10V, Ie=ft(MHz)Ie=10μA, Ic=0Vebo(V)0260Vcb=6V, Ie=-ft(MHz) Vcb=15V, Ie=Vebo(V)0320Vce=10V, Ic=ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vce=10V, Ic=Vebo(V)2300Vcb=10V, Ie=Cre(pF) Vcb=10V, Ie=Vebo(V)120250Vce=8V, Ic=1ft(GHz) Vebo(V)0350Vce=10V, Ic=ft(GHz) Vbe=2V, Ic=0Vbe=2V, Ic=0Vebo(V)0200Vce=10V, Ic=ft(GHz) Vcb=12V, Ie=Vebo(V)2500Vce=5V, Ic=5Vce(sat) Vcb=25V, Ie=Vebo(V)0200Vce=5V, Ic=5ft(GHz) Vcb=20V, Ie=Vebo(V)0250Vce=5V, Ic=5ft(GHz) Vcb=10V Vebo(V)0180Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vebo(V)0320Vce=5V, Ic=5Cob(pF) Veb=4V, Ic=0ft(MHz) Vcb=60V, Ie=Vebo(V)0700Vce=6V, Ib=2Vcb=30V Vebo(V)80180Vce=10V, Ic=ft(MHz) Vcb=30V Vebo(V)82180Vce=10V, Ic=ft(MHz) Vcb=10V Vebo(V)0560Vce=5V, Ic=5ft(MHz) Vebo(V)0200Vce=10V, Ic=ft(GHz) Veb=2V, Ic=0Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Veb=1V, Ic=0Vebo(V)120300Vce=8V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)150300Vce=8V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0400Vce=4V, Ic=5ft(GHz) Vcb=80V, Ie=Vebo(V)0200Vce=10V, Ic=ft(GHz) Vebo(V)150300Vce=8V, Ic=2ft(GHz) Veb=2V, Ic=0Vcb=25V, Ie=Vebo(V)50180Vce=5V, Ic=1Vbe=1V, Ic=0Vebo(V)0250Vce=10V, Ic=ft(GHz) Vbe=1V, Ic=0Vebo(V)0250Vce=8V, Ic=2ft(GHz) Vbe=1V, Ic=0Vebo(V)0250Vce=6V, Ic=7ft(GHz)Vebo(V)0250Vce=10V, Ic=ft(GHz) Vbe=1V, Ic=0Vebo(V)0250Vce=8V, Ic=2ft(GHz) Vbe=1V, Ic=0Vbe=1V, Ic=0Vebo(V)0250Vce=6V, Ic=7ft(GHz) Vce=1V, Ic=1Vebo(V)50Vce=1V, Ic=1Cob(pF) Vce=1V, Ic=1Vebo(V)50Vce=1V, Ic=1Cob(pF) Vce=1V, Ic=1Vebo(V)50Vce=1V, Ic=1Cob(pF)ft(GHz)Vcb=10V, Ie=Vebo(V)0270Vce=5V,Ic=20ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V,Ic=5m Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=5ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=4ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=4ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=4ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V,Ic=20ft(GHz)ft(GHz) Vebo(V)0150Vce=5V,Ic=5m Veb=2V, Ic=0Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=20V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=20V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Veb=2V, Ic=0Vebo(V)0200Vce=10V, Ic=Cob(pF) Vcb=40V, Ie=Vebo(V)0200Vce=6V, Ic=1ft(MHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vebo(V)0175Vce=3V, Ic=5ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=1ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=5ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=1ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=5ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=1ft(GHz) Vcb=5V, Ie=0Vebo(V)250600Vce=5V, Ic=5Cob(pF) Vcb=8V, Rbe∞Vcb=10V, Ie=Vebo(V)250600Vce=5V, Ic=5Cob(pF) Vcb=10V, Ie=Vebo(V)250600Vce=5V, Ic=5Cob(pF) Vcb=10V, Ie=Vebo(V)250600Vce=5V, Ic=5Cob(pF) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V Vebo(V)160270Vce=2V, Ic=5ft(MHz) Vcb=12V Vebo(V)160270Vce=2V, Ic=5ft(MHz) Vcb=15V, Ie=Vebo(V)0120Vce=5V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)0120Vce=5V, Ic=5ft(GHz)Vcb=10V, Ie=Vebo(V)0160Vce=3V, Ic=7ft(GHz)Vebo(V)0175Vce=3V, Ic=5ft(GHz)Vebo(V)0175Vce=3V, Ic=1Cob(pF) Vcb=5V, Ie=0Vcb=10V, Ie=Vebo(V)120250Vce=3V, Ic=7ft(GHz) Vcb=10V, Ie=Vebo(V)100250Vce=8V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)100250Vce=6V, Ic=1ft(GHz) Vebo(V)0175Vce=3V, Ic=5ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=1Cob(pF) Vcb=5V, Ie=0Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0240Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0240Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0240Vce=5V, Ic=1ft(GHz) Vcb=12V, Ie=Vebo(V)90160Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)90160Vce=5V, Ic=2ft(GHz) Vce=6V, Ic=1Vebo(V)9400Vce=6V, Ic=5Cob(pF) Vebo(V)4000Vce=10V, Ic=Cob(pF) Vce=0.5V, Ic=Vcb=25V, Ie=Vebo(V)0300Vce=6V, Ic=1ft(MHz) Vcb=15V, Ie=Vebo(V)0100Veb=2.5V, Ic=hfeft(MHz) Vcb=12V, Ie=Vebo(V)0180Vce=6V,Ic=1m Vcb=15V, Ie=Vebo(V)01Veb=3V, Ic=0hfeVce=6V, Ic=1Vebo(V)4700Ie=-1mA, f=1Cob(pF) Vce=10V, Ic=Vebo(V)2300Ic=1mA, f=20Cre(pF)hfeVcb=15V, Ie=Vebo(V)0100Veb=3V, Ic=0Vcb=15V, Ie=Vebo(V)50180Vce=10V, Ic=Vcb=20V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Pc(mW)200Cre(pF)0 1.2 1503000Ie=1mA, f=2001 1.5Ie=0, f=1MHz Pt(mW)300|S21e| *81000.950Vcb=-5V, Ie=Pc(mW)200Cre(pF)00.750 1.1 1.7Vcb=-6V, f=1Pc(mW)150Cc．rbb'01101 1.5Ie=0, f=1MHz Pt(mW)250|s21e| *8100 2.14Ie=0, f=1MHz Pt(mW)800td(ns)0 3.5 2504000Vce=-10V, Ie Pt(mW)200Cob(pF)0 1.101 1.5Ie=0, f=1MHz Pt(mW)3000000.750Vcb=-5V, Ie=Pc(mW)150Cre(pF)00.6Pc(mW)400Vce(sat)0-0.1 1503000Ie=1mA, f=200 1.1 1.7Vcb=-6V, f=1Pc(mW)150Cc．rbb'011Pc(mW)300Cre(pF)0 1.2 1503000Ie=2mA, f=20Pc(mW)300Cob(pF)00 02000Vce=-12V, Ic=02000Vce=-12V, Ic=Pc(mW)300Cob(pF)00Pt(mW)250Cob(pF)0 1.5 340Vce=-10V, Ic=Pc(W)1Cob(pF)0 2.7 05000Ie=10mA, f=2Pc(mW)150NF(dB)0 2.8 1503000Ie=1mA, f=20Pc(mW)250|S21e| *500 1.53Vce=-10V, Ic=1502300Vce=-6V, Ic=Pc(mW)150Cre(pF)0 1.1 500Vce=-5V, Ic=Pc(W)*1ft(GHz)0 1.5 2004000Vce=-10V, Ie Pc(mW)200Cob(pF)00.85Pc(mW)250Cre(pF)00.75 0.6 1.20Vce=-10V, Ic=Pc(mW)125NF(dB)0 2.8 1503000Vcb=-10V,Ie=2004000Vce=-10V, Ie Pc(mW)150Cob(pF)00.85Pc(W)1Cob(pF)05 2003000Vce=-20V, Ic=0 1.2 1.6Vcb=-10V, f=Pc(mW)250Cre(pF)00.9 2004000Vce=-10V, Ie Pc(mW)*150Cob(pF)00.850 1.2 1.6Vcb=-10V, f=Pc(mW)150Cre(pF)00.9 3006500Vce=-5V, Ie=Pc(mW)150Cob(pF)0 1.2 05500Vce=-1V, Ic=Pc(mW)2000000.9 1.1Ie=0, f=1MHz Pc(mW)250|S21e| *50Pc(mW)400Cre(pF)0 1.2 1503000Ie=1mA, f=201502500Vce=6V, Ie=-Pt(mW)200Cob(pF)0 1.9 0.810Vce=6V, Ie=-Pc(mW)250Cob(pF)00.6 4506500Ie=-1mA, f=2Pc(mW)400PG(dB)200 0.6 1.2 1.6Ie=-15mA, f=Pc(mW)400PG(dB)0200.810Vce=6V, Ie=-Pt(mW)250Cob(pF)00.61.520Vce=6V, Ie=-Pc(mW)250Cob(pF)00.50 1.1 1.5Vcb=10V, Ie=Pc(mW)250|S21e| *56 2070180Vce=15V, Ic=Pc(W)0PG(dB)9100 1.1 1.5Vcb=10V, Ie=Pc(mW)100Cre(pF)00.9 1502500Ie=-1mA, f=2Pc(mW)400NF(dB)0 2.8 30000Ie=-10mA, f=Pc(W)1PG(dB)220 30000Ie=-10mA, f=Pc(W)1PG(dB)220 1.200Vce=15V, Ie=Pt(W)*5ft2(GHz) 1.4 1.7048Ie=-1mA, f=1Pc(mW)800Re(hie)*040 91216Ie=-30mA, f=Pt(W)*3Cob(pF)04 2504000Vce=10V,Ie=Pt(mW)800Cob(pF)040 1.1 1.5Vcb=10V, Ie=Pc(mW)250PG(dB)13152 2.70Vce=10V, Ic=Pt(W)3Cob(pF)01 150200Vce=10V, Ic=Pt(W)*4ft(GHz) 1.62 0.601Vce=3V, Ic=1Pt(mW)300△Vbe(V)00 0.601Vce=5V, Ic=3Pt(mW)400△Vbe(V)0001 1.3Ie=0, f=1MHz Pt(mW)250Cc．rbb'*0120 1.9 2.2Ie=0, f=1MHz Pt(mW)250Cc．rbb' *010 360550820Ie=-5mA, f=1Pc(W)400PG(dB)2125 360550820Ie=-5mA, f=1Pc(W)400PG(dB)2125 1050180Vce=10V, Ic=Pc(W)2PG(dB)100 0.801Vce=5V, Ic=1Pt(mW)300△Vbe(V)00 0.801Vce=10V, Ic=Pt(mW)300△Vbe(V)0002500Vcb=-10V, Ie Pc(mW)125Cob(pF)0 1.5 3005000Vce=6V, Ie=-Pc(mW)150Cob(pF)0 1.4 3005000Vce=6V, Ie=-Pc(mW)150Cob(pF)0 1.400.350.45Vcb=12V, Ie=Pc(mW)250PG(dB)252800.350.45Vcb=12V, Ie=Pc(mW)250PG(dB)1822 3006500Vce=-5V, Ie=Pc(mW)200Cob(pF)0 1.2 012Vcb=10V, Ie=Pc(mW)300Cc．rbb'010 012Vcb=10V, Ie=Pc(mW)300Cc．rbb'010Pc(mW)100Cc．rbb'0000.70Vce=6V, f=1M0.801Vce=5V, Ic=1Pt(mW)300△Vbe(V)00 0.801Vce=5V, Ic=1Pt(mW)300△Vbe(V)00 0.801Vce=10V, Ic=Pt(mW)300△Vbe(V)00 0.801Vce=10V, Ic=Pt(mW)300△Vbe(V)00 1050180Vce=10V, Ic=Pc(W)1PG(dB)14.50 1050180Vce=10V, Ic=Pc(W)3PG(dB) 6.70 1050180Vce=10V, Ic=Pc(W)3PG(dB)100 1050180Vce=10V, Ic=Pc(W)1PG(dB)10.70 1050180Vce=10V, Ic=Pc(W)1PG(dB)100 1050180Vce=10V, Ic=Pc(W)*15PG(dB)100 1050180Vce=10V, Ic=Pc(W)*10PG(dB)7.80 1050180Vce=10V, Ic=Pc(W)*20PG(dB) 6.70 1050180Vce=10V, Ic=Pc(W)3PG(dB) 3.70 1050180Vce=10V, Ic=Pc(W)3PG(dB) 5.40Pc(W)1PG(dB)120 1050180Vce=12V,Ic=11050180Vce=10V, Ic=Pc(W)1PG(dB)9.20 1050180Vce=10V, Ic=Pc(W)1PG(dB)100 1050180Vce=10V, Ic=Pc(W)1PG(dB)7.5000.75 1.1Ie=0, f=1MHz Pt(mW)250PG(dB)1315 1050180Vce=10V, Ic=Pc(W)0PG(dB)15.70 1050180Vce=7V, Ic=5Pc(W)0PG(dB)130 1050180Vce=7V, Ic=0Pc(W)0PG(dB)90 1503000Vce=6V, Ie=-Pc(mW)250Cob(pF)0 1.6 1503000Vce=6V, Ie=-Pc(mW)250Cob(pF)0 1.6 3005000Vce=6V, Ie=-Pc(mW)150Cob(pF)0 1.2 1503000Vce=6V, Ie=-Pc(mW)250Cob(pF)0 1.6Pc(mW)250Cob(pF)0 1.6 1503000Vce=6V, Ie=11001500Vce=10V, Ic=Pc(W)1Cob(pF)045 3570300Vce=10V, Ic=Pc(W)0PG(dB)130Pc(W)2PG(dB)8.80 0-300Po=15W(PEP1050180Vce=10V, Ic=Pc(W)7PG(dB)12.30 00250Vcb=12V, Ie=Pc(W)*60PG(dB)120 1050180Vce=10V, Ic=Pc(W)0PG(dB) 6.70 2050110Vce=25V, Ic=Pc(W)3PG(dB)8.20 2050110Vce=25V, Ic=Pc(W)4PG(dB)7000.550Vcb=10V, Ie=Pt(mW)*250|S21e| *7.59.300.60Vcb=10V, Ie=Pt(mW)290|S21e| *5 6.700.350Vcb=8V, Ie=0Pt(mW)*250|S21e| * 1.5 2.7 3570180Vce=10V, Ic=Pc(W)1PG(dB)13.80000.5(V), Ic=20mA Pc(mW)600ft(MHz)30050000.10(V), Ic=10mA Pc(mW)400NF(dB)0 2.8Pc(mW)300Cob(pF)0.80 30000Vce=12.5V, IcRth(j-c)**20ηc(%)6070 0710Vcb=10V, f=11050180Vce=10V, Ic=Pc(W)2PG(dB)13.80 12.200Pc(W)*175IMD(dB)00 1503000Ie=-1mA, f=2Pc(mW)200NF(dB)0 2.8 1802500Vce=10V, Ic=Pc(mW)750Cob(pF)015Rth(j-c)**20ηc(%)5565 0710Vcb=10V, f=10 6.50Vce=14V, Ic=Pt(W)*6Cob(pF)00.9 65000Vce=10V, Ic=Pc(mW)250Cob(pF)0 1.200.30.4Vcb=10V, Ie=Pc(mW)250PG(dB)2024 60000Vce=10V, Ic=Pc(mW)250Cob(pF)0 1.200.751Ie=0, f=1MHz Pt(mW)250|S21e| *91000.370.7Ie=0, f=1MHz Pt(mW)250CG(dB)152300.70.9Vcb=10V, Ie=Pc(mW)200PG(dB)1417Pt(mW)580|S21e| *8900.40Vcb=8V, f=1M4506500Ie=-1mA, f=1Pc(mW)400PG(dB)2024 00150Vcb=12V, Ie=Pc(W)*40PG(dB)17000.81Ic=1mA, f=10Pc(mW)150PG(dB)024 *******Vce=10V, Ic=Pt(mW)*600Cob(pF)01 02300Vce=12V, Ie=Pc(mW)250Cob(pF)0 1.8 02300Vce=12V, Ie=Pc(mW)250Cob(pF)0 1.8 1503000Vce=6V, Ie=-Pc(mW)200Cob(pF)0 1.300.550.8Vcb=10V, Ie=Pc(mW)200PG(dB)141600.230.45Vcb=12V, Ie=Pc(mW)200PG(dB)182300.71Vcb=10V, Ie=Pc(mW)200PG(dB)141800.270.45Vcb=10V, Ie=Pc(mW)200CG(dB)162300 1.5Vcb=10V, Ie=Pc(mW)2000000 1.5Vcb=10V, Ie=Pc(mW)2000000.9 1.5Vcb=10V, Ie=Pc(mW)310Cc．rbb'012010Ic=1mA, f=10Pc(mW)150PG(dB)0200 1.150Vcb=10V, Ie=Pc(mW)300Cre(pF)00.7500.90Vcb=10V, Ie=Pc(mW)300Cre(pF)00.6 12.200Pc(W)*250IMD(dB)000020(ps), Ic=5mA,Pc(mW)300CG(dB)1620 1080300Vce=10V, Ic=Pc(W)0PG(dB)100 1050180Vce=10V, Ic=Pc(W)2PG(dB)14.50 1060180Vce=10V, Ic=Pc(W)4PG(dB)8.200 2.3 3.5Vcb=10V, Ie=Rth(j-c)**21ηc(%)50550710Vcb=10V, Ie=Rth(j-c)**10ηc(%)5560 050Vce=10V, Ic=Pt(mW)600Cob(pF)00.788.50Vce=8V, Ic=7Pt(mW)400Cob(pF)00.20 2.54Vcb=10V, Ie=Pt(W)*700 2050110Vce=25V, Ic=Pc(W)*170PG(dB)6000 3.5Vcb=10V, Ie=Pc(mW)150NF(dB)0500.90Vcb=10V, Ie=Pc(mW)10000 1080180Vce=10V, Ic=Pc(W)2PG(dB)130 1030180Vce=10V, Ic=Pc(W)4PG(dB)11.80 1040180Vce=10V, Ic=Pc(W)3PG(dB)9.30 1040180Vce=10V, Ic=Pc(W)5PG(dB)7000 1.5Ic=1mA, f=10Pc(mW)400Crb(pF)00.80025Vcb=10V, Ie=Pc(W)*15PG(dB)10.80 0080Vcb=10V, Ie=Pc(W)*3500 0110160Vcb=10V, Ie=Pc(W)*7000。

SAE-J434-2004(标准参考)翻译

SAE-J434-2004(标准参考)翻译1 范围该SAE标准涵盖了应用于汽车球墨铸铁铸件和相关的行业的铸铁试件的金相组织和最低机械性能要求。

铸件需详细说明是铸态或热处理状态。

如果铸件需热处理，需获得客户的批准。

本附录提供了在化学成分，显微组织和力学性能，铸造性能等方面面信息以及为特定条件服务的其他信息。

在此标准的SI单位是磅2.2参考文献2.1 相关出版物The following publications form a part of the specification to the extent specified herein. Unless otherwise indicated, the latest revision of SAE publications shall apply2.1.1 ASTM 国际出版物Available from ASTM INTERNATIONAL, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959ASTM E10 –-Standard Test Method for Brinell Hardness of Metallic MaterialsASTM E23—Standard Test Methods forNotched Bar Impact Testing of Metallic MaterialsASTM E111—Standard Test Method for Young's Modulus, Tangent Modulus and Chord ModulusASTM A247—Standard Test Method for Evaluation the Microstructure of Graphite in Iron CastingsASTM A536—Standard Specification for Ductile Iron CastingsSTP-455—Gray, Ductile, and Malleable Iron Castings Current Capabilities (out-of-print)2.1.2其他出版物Metals Handbook, Vol. 1, 2, and 5, 8th Edition, American Society for Metals, Metals Park, OH Gray and Ductile Iron Castings Handbook, Gray and Ductile Iron Founder Society, Cleveland, OH H. D. Angus, Physical Engineering Properties of Cast Iron, British Cast Iron Research Association, Birmingham, England3.3 牌号机械性能和冶金描述如表1所示。

AS 1443-2004

AS 1443—2004Australian Standard™Carbon and carbon-manganese steel—Cold finished barsAS 1443This Australian Standard was prepared by Committee MT-001, Iron and Steel. It was approved on behalf of the Council of Standards Australia on 28 November 2003 and published on 18 February 2004.The following are represented on Committee MT-001:Australasian Railway AssociationAustralian Building Codes BoardAustralian Foundry InstituteAustralian Steel InstituteBureau of Steel Manufacturers of AustraliaInstitute of Materials Engineering AustraliaKeeping Standards up-to-dateStandards are living documents which reflect progress in science, technology and systems. To maintain their currency, all Standards are periodically reviewed, and new editions are published. Between editions, amendments may be issued. Standards may also be withdrawn. It is important that readers assure themselves they are using a current Standard, which should include any amendments which may have been published since the Standard was purchased.Detailed information about Standards can be found by visiting the Standards Web Shop at .au and looking up the relevant Standard in the on-line catalogue.Alternatively, the printed Catalogue provides information current at 1 January each year, and the monthly magazine, The Global Standard, has a full listing of revisions and amendments published each month.Australian Standards TM and other products and services developed by Standards Australia are published and distributed under contract by SAI Global, which operates the Standards Web Shop.We also welcome suggestions for improvement in our Standards, and especially encourage readers to notify us immediately of any apparent inaccuracies or ambiguities. Contact us via email at mail@.au, or write to the Chief Executive, Standards Australia International Ltd, GPO Box 5420, Sydney, NSW 2001.This Standard was issued in draft form for comment as DR 03311.AS 1443—2004Australian Standard™Carbon and carbon-manganese steel—Cold finished barsOriginated as AS G17—1966.Previous edition AS 1443—1994.Fifth edition 2004.COPYRIGHT© Standards Australia InternationalAll rights are reserved. No part of this work may be reproduced or copied in any form or by any means, electronic or mechanical, including photocopying, without the written permission of the publisher.Published by Standards Australia International LtdGPO Box 5420, Sydney, NSW 2001, AustraliaISBN 0 7337 5729 4AS 1443—2004 2PREFACEThis Standard was prepared by the Australian members of the Joint Standards Australia/Standards New Zealand Committee MT-001, Iron and Steel, to supersede AS 1443―1994, Carbon steels and carbon-manganese steels―Cold-finished bars. After consultation with stakeholders in both countries, Standards Australia and Standards New Zealand decided to develop this Standard as an Australian rather than an Australian/New Zealand Standard.The objective of this Standard is to specify requirements for cold-finished carbon steel and carbon-manganese steel bars, manufactured from hot-rolled bars and semifinished products, for general engineering purposes.The objective of this revision is to revise the specifications and quality requirements for suppliers and purchasers of carbon and carbon manganese steels that are manufactured as cold finished bars.To reflect changes in steel-making technology and to meet industry requirements, the steel grades have been revised and grade prefix letters ‘M’ and ‘U’ introduced to indicate steel quality.Steel grades with specified mechanical properties have been revised so that they align with other grades in this Standard. A table of mechanical properties of steels in the machined condition has been added.Dimensional tolerances have been completely revised so that they align more closely with overseas Standards and industry practice.The terms ‘normative’ and ‘informative’ have been used in this Standard to define the application of the appendix to which they apply. A ‘normative’ appendix is an integral part of a Standard, whereas an ‘informative’ appendix is only for information and guidance.AS 1443—20043CONTENTSPage1 SCOPE (4)DOCUMENTS (4)2 REFERENCED3 DEFINITIONS (5)4 DESIGNATION (6)5 CONDITION OF STEEL ON DELIVERY (7)6 MATERIALS (8)DEFECTS (8)FROM7 FREEDOMTOLERANCES (9)8 DIMENSIONAL (9)9 TENSILETEST10 ROUNDING OF TEST RESULT VALUES (10)11 MARKING (11)APPENDICESA PURCHASING GUIDELINES (19)B MEANS FOR DEMONSTRATING COMPLIANCE WITH THIS STANDARD (21)C REQUIREMENTS FOR MAXIMUM SURFACE IMPERFECTION DEPTHAND RECOMMENDED MACHINING ALLOWANCES (23)AS 1443—2004 4STANDARDS AUSTRALIAAustralian StandardCarbon and carbon-manganese steel—Cold finished bars1 SCOPEThis Standard specifies requirements for cold-finished carbon steel and carbon-manganesesteel bars manufactured from hot-rolled bars and semifinished products (see AS 1442), forgeneral engineering purposes. The Standard applies to steel supplied to specified chemicalcomposition only or to specified chemical composition and mechanical properties. Itpermits the addition of elements, such as boron, and micro-alloying elements for theachievement of special properties.NOTES:1 Advice and recommendations on information that should be supplied by the purchaser at thetime of enquiry and order are given in Appendix A.2 Alternative means for determining compliance with this Standard are given in Appendix B.2 REFERENCED DOCUMENTSThe following documents are referred to in this Standard.AS1171 Non-destructive testing—Magnetic particle testing of ferromagnetic products, components and structures1199 Sampling procedures and tables for inspection by attributes1199.0 Part 0: Introduction to the ISO 2859 attributes sampling system1199.1 Part 1: Sampling schemes indexed by acceptance quality limit (AQL) forlot-by-lot inspection.1391 Method for tensile testing of metals1442 Carbon steels and carbon-manganese steels―Hot-rolled and semifinished products1654 ISO system of limits and fits1654.1 Part 1: Bases of tolerances, deviations and fits1654.2 Part 2: Tables of standard tolerances grades and limit deviations for holesand shafts1733 Methods for the determination of grain size in metals2062 Non-destructive testing—Penetrant testing of products and components2338 Preferred dimensions of wrought metal products2706 Numerical values—Rounding and interpretation of limiting values4177 Caravan and light trailer towing components4177.2 Part 2: 50 mm towballsAS/NZS1050 Methods for analysis of iron and steel1050.1 Part 1: Sampling of iron and steel for chemical analysisStandards Australia .au5 AS 1443—2004.au Standards Australia AS/NZS ISO9001 Quality management systems—Requirements9004Quality management systems—Guidelines for performance improvements HB 18Guidelines for third-party certification and accreditation HB 18.28 Guide 28: General rules for a model third-party certification scheme forproductsISO2566 Steel ―Conversion of elongation values2566-1 Part 1: Carbon and low alloy steels3 DEFINITIONSFor the purpose of this Standard, the definitions below apply.3.1 BarFinished product of solid section which may be rectangular, square, round or hexagonal incross-section.3.2 Bar conditions3.2.1 Bright barsBars produced by cold drawing, cold rolling, turning and polishing or precision grinding,and which have a smooth surface free from scale and harmful imperfections.3.2.2 Cold-sized barsBars which are sized by cold drawing or cold rolling to provide closer dimensionaltolerances than occur for hot-rolled bars, but which may contain some surfaceimperfections.3.2.3 Peeled barsBars which are finished by rough machining.3.3 Bar shapes3.3.1 Flat bars (flats)Bars of rectangular cross-section, 1.5 mm or greater in thickness and less than 600 mm inwidth, supplied in straight lengths or coils and having edges of controlled contour.3.3.2 Hexagonal bars (hexagons)Bars of regular hexagonal cross-section supplied in straight lengths or coils.3.3.3 Round bars (rounds)Bars of circular cross-section supplied in straight lengths or coils.3.3.4 Square bars (squares)Bars of square cross-section supplied in straight lengths or coils.3.4 Fully killed steelSteel deoxidized with a strong deoxidizing agent such as silicon or aluminium in order toreduce the oxygen content to prevent a reaction between carbon and oxygen duringsolidification.AS 1443—2004 63.5 Merchant quality steelProduct having wider carbon and manganese ranges than those of specified carbon steels(see Table 2). It is not subject to product analysis tolerances, grain size requirements ormodification with special additions.3.6 Test batchFinished steel of the same size, produced from the same cast and from the same heat-treatment batch.3.7 Test pieceA prepared piece for testing, made from a test specimen.3.8 Test sampleA portion of material or product, or a group of items selected from a test batch by asampling procedure.3.9 Test specimenA portion or a single item taken from the test sample for the purpose of applying aparticular test.4 DESIGNATION4.1 GeneralThe steel designation shall comprise the number of this Australian Standard, i.e. AS 1443,followed by a diagonal slash and additional characters in accordance with Clauses 4.2 and4.3. Additional designations for austenitic grain size are given in Clause 4.4.4.2 Steels supplied to chemical composition onlyThe designation of steel supplied to a specified chemical composition shall be in accordance with the following designations:(a) A prefix letter, if applicable, as follows:(i) M: Merchant quality steel.(ii) U: Unspecified deoxidation.(iii) X: Major deviation in chemical composition of any grade from the corresponding AISI-SAE grade.NOTE: Information on AISI-SAE grades is given in the relevant steel products manual of theIron and Steel Society of AIME which is located at 410 Commonwealth Drive, Warrendale,PA 15086-7512, USA.(b) A four-digit series designation, as follows, wherein the first two digits of the numberindicate the type of steel and the last two digits indicate the approximate mean of thespecified carbon range:(i) 10XX: Plain carbon steels.(ii) 11XX: Sulfurized free-cutting carbon steels.(iii) 12XX: Phosphorized and sulfurized free-cutting carbon steels.(iv) 13XX: Carbon-manganese steels.NOTE: The double ‘X’ has no significance other than to indicate the position for digits to beadded.Standards Australia .au7 AS 1443—2004.au Standards Australia Modification symbols should be added to the series designation as follows:(i) For lead-bearing steels, the letter ‘L’ is used to indicate that the steel contains lead,and is placed between the second and third characters of the four-digit seriesdesignation.(ii) For aluminium-killed steels, the letter ‘A’ is placed between the second and thirdcharacters of the four-digit series designation.(iii) For boron-treated steels, the letter ‘B’ is placed between the second and thirdcharacters of the four-digit series designation.(iv) For micro-alloyed steels, the letter ‘M’ is placed between the second and thirdcharacters of the four-digit series designation.Examples of designation: AS 1443/12L14, AS 1443/10A10, AS 1443/10B22, AS 1443/10M40, AS 1443/X1038.4.3 Steels supplied to chemical composition and mechanical propertiesThe designation of steels supplied to chemical composition and mechanical properties shallconsist of the following:(a)The prefix letters ‘D’ or ‘T’, if applicable. NOTE: These designations normally apply to drawn or turned products, respectively. (b) The number 3, 4, 5, 6, 11, 12, 13 or 14, to indicate the steel grade.Examples of designation: AS 1443/D3, AS 1443/T5.4.4 Austenitic grain sizeThe following designations consisting of suffix letters ‘CG’ or ‘FG’ indicate the austeniticgrain size of the steel as defined in AS 1733:(a) CG: Coarse.(b) FG: Fine.Example of designation: AS 1443/1030FG.NOTE: The absence of these suffix letters indicates that the steel may be coarse-grained or fine-grained at the supplier’s option.5 CONDITION OF STEEL ON DELIVERY5.1 GeneralSteel shall be supplied in one of the following conditions:(a) Bright barsCold-drawn, cold-rolled, turned and polished, cold-drawn and precision ground orturned and precision ground.(b) Cold-sized barsCold-drawn or cold-rolled.(c) Peeled barsRough machined.In addition, stress relieving or normalizing heat treatments may be specified.5.2 Steel supplied to chemical compositionSteel supplied to chemical composition shall comply with the requirements of Tables 1, 2, 3or 4.AS 1443—2004 85.3 Steels supplied to chemical composition and mechanical propertiesSteels supplied in either the cold-drawn or cold-rolled condition and which have notreceived a subsequent heat treatment shall comply with the chemical composition andmechanical properties specified in Table 5 and Table 6. Steels in all other conditions shallcomply with the chemical composition and mechanical properties specified in Table 7.6 MATERIALS6.1 Chemical composition6.1.1 GeneralThe method of sampling for chemical analysis shall be in accordance with AS/NZS 1050.1.Chemical composition shall be determined by any procedures which are not less accuratethan those given in AS/NZS 1050.1.6.1.2 Cast analysisWherever possible a chemical analysis of the steel from each cast shall be made todetermine the proportions of the specified elements. In cases where it is impracticable toobtain samples from liquid steel, analysis of test samples taken in accordance with therequirements of AS/NZS 1050.1 may be reported as cast analysis.The reported cast analysis of the steel shall conform to the requirements of Tables 1, 2, 3and 4 for the appropriate grade.6.1.3 Residual elementsFor steels complying with this Standard, residual elements are acceptable to the followinglimits:(a) Chromium: 0.30% max.(b) Copper: 0.35% max.(c) Molybdenum: 0.10% max.(d) Nickel: 0.35% max.NOTE: The amount of residual elements may affect subsequent processes, especially thoseinvolving cold working, welding and heat treatment.6.1.4 Product analysisFor grades of steel excluding those designated ‘U’ or ‘M’, with prior hot-rolled cross-sectional areas up to and including 0.06 m2, the results of individual determinations carriedout on the product shall be within the product analysis tolerance limits specified in Table 5.Where several determinations of a single element, excluding lead, are carried out onproducts from any one cast, the spread of individual results shall not extend both above andbelow the range specified in Tables 1, 3 and 4.6.2 Tensile test requirementsWhen tested in accordance with Clause 9, steels requiring tensile testing shall meet therelevant requirements of Tables 6 and 7.7 FREEDOM FROM DEFECTS7.1 GeneralThe steel shall be free from internal and surface defects that would render it unsuitable forits particular application.Standards Australia .auIf, after acceptance of the steel and provided it has been properly treated after delivery, subsequent processing reveals that it contains defects found to be detrimental, the steel shall be deemed not to comply with this Standard.7.2 Bright bars7.2.1 Cold-drawn and cold-rolled barsThe maximum permissible depth of surface imperfections shall be in accordance with the requirements for surface condition designation B (see Appendix C).7.2.2 Turned and polished or precision ground barsThe surface shall be free from imperfections of hot-rolled origin.7.3 Cold-sized or peeled barsThe maximum permissible depth of surface imperfections shall be in accordance with the requirements for surface conditions designated ‘commercial’ for cold-sized bars, or those designated F for peeled bars (see Appendix C).8 DIMENSIONAL TOLERANCESSteel bars shall meet the following dimensional tolerance requirements:(a) Tolerances for cross-sectional dimensionsThe tolerances for cross-sectional dimensions of round, square, hexagonal and flat bars shall be graded in accordance with Table 8 and shall conform to the limits given in Table 9.(b) Tolerances for lengthWith the exception of coils, the length of all bars shall be between 3 m and 7 m. They shall conform to the requirements of the mill length or the set length categories of Table 10.NOTE: Bars may be in the cropped, saw-cut or chamfered form.(c) Tolerances for straightnessWith the exception of coils, the maximum allowable deviation from straightness shall be as follows:(i) ForapplicationscommercialThe straightness requirements for commercial applications shall be inaccordance with Table 11.(ii) For critical applicationsThe straightness requirements for critical applications applies to round bars lessthan 25 mm diameter and shall be less than 0.1 mm deviation from a straightline in 300 mm (1:3000).NOTES:1 All straightness measurements are taken at least 50 mm from the end of theproduct.2 Examples of critical applications are spindles for small electric motors.9 TENSILE TEST9.1 Condition of test samplesTest samples shall be tested in the as-supplied condition.9.2 SamplingWhen mechanical test certificates are required, test sampling shall be taken from each batch at a frequency to be agreed between purchaser and the supplier.NOTE: As a guideline, sampling frequencies of one sample for a batch of steel up to 25 t and two samples for a batch of steel exceeding 25 t are recommended.9.3 Location and preparation of test piecesTest pieces shall be located and prepared as follows (see also AS 1391):(a) Bars up to 40 mm diameter or major cross-sectional dimension shall be tested axially,either in full section or by using a proportional test piece.(b) Bars with nominal cross-sectional dimensions greater than 40 mm shall have the axisof the test specimen parallel to the axis of the bar and as near as practicable to a point one-sixth of the distance between diagonally (or diametrically) opposite surfaces. A proportional test piece shall be used.(c) Rectangular bars of width greater than 40 mm and thickness not greater than 40 mmshall be tested either in full thickness or by using a proportional test piece with its axis parallel to the axis of the product, and as near as practicable to a position one quarter of the width and one half of the thickness from adjacent surfaces of the bar. (d) Rectangular products of thickness greater than 40 mm shall be tested using aproportional test piece with its axis parallel to the axis of the product, and as near as practicable to a point one-sixth of the distance from a surface of the bar between opposite surfaces.9.4 Method of testThe yield strength (0.2% proof stress), tensile strength and percentage elongation shall be determined in accordance with AS 1391.The rate of straining when approaching the yield point shall conform to the limits of the standard strain rate given in AS 1391.The elongation results shall be reported on a gauge length of Lo = 5.65√So, where So is the cross-sectional area of the test piece before testing. If necessary, conversion of results froma non-proportional gauge length shall be in accordance with ISO 2566-1.9.5 RetestingShould any tensile test piece first selected fail to comply with the requirements of Clause6.2, one or more of the following procedures shall be adopted:(a) For each failed test select two further test samples and test them in accordance withClause 9. Should the test results from these samples comply with the requirements of Clause 6.2, the steel is deemed to comply with this Standard.(b) Select test samples from each bar or coil and test in accordance with Clause 9. Thesteel is deemed to comply with this Standard if all test results comply with the requirements of Clause 6.2.(c) Reprocess the unit, which failed, and repeat the tests in accordance with Clause 9.The unit is deemed to comply with Clause 6.2.10 ROUNDING OF TEST RESULT VALUES10.1 GeneralWith the exception of tensile test results, the observed or calculated values shall be rounded to the same number of figures as in the specified values and then compared with the specified values. For example, for specified maximum or minimum values of 2.5, 2.50 and2.500, the observed or calculated value would be rounded respectively to the nearest 0.1, 0.01 and 0.001 (see also AS 2706).10.2 Tensile test resultsThe determined value of tensile strength shall be rounded to the nearest 10 MPa and the determined value of yield strength shall be rounded to the nearest 5 MPa.11 MARKINGSteel as supplied by the manufacturer shall be legibly and durably marked or tagged (for bundles) as follows:(a) To identify the manufacturer.(b) To enable it to be traced to the ladle of steel from which it was made.(c) To indicate the grade of steel.(d) To enable it to be identified with this Standard.(e) To indicate nominal size and shape, length and condition, e.g. ‘25 mm RND 3.0 mBRIGHT BAR COLD-DRAWN’.(f) To identify the quality plan, if applicable.(g) To indicate the number of pieces or total mass.NOTE: Manufacturers making a statement of compliance with this Australian Standard on a product, or on packaging or promotional material related to that product, are advised to ensure that such compliance is capable of being verified.TABLE 1CHEMICAL COMPOSITION REQUIREMENTS FOR CARBON STEELSChemical composition (cast analysis), percentCarbon Silicon (see Notes 2 and 3) Manganese Phosphorus SulfurGradedesignation AS 1443/ (see Note 1) Min. Max. Min. Max. Min. Max. Max. Max. 1004 (Note 4) 1010 1016 1020 1022 1030 1035 X1038 1040 1045 1050 1055 1058 — 0.08 0.13 0.18 0.18 0.28 0.32 0.35 0.37 0.43 0.48 0.50 0.560.06 0.13 0.18 0.23 0.23 0.34 0.38 0.42 0.44 0.50 0.55 0.60 0.630.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.100.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.350.25 0.30 0.60 0.30 0.70 0.60 0.60 0.70 0.60 0.60 0.60 0.60 0.300.50 0.60 0.90 0.60 1.00 0.90 0.90 1.00 0.90 0.90 0.90 0.90 0.550.040 0.040 0.040 0.040 0.040 0.040 0.040 0.040 0.040 0.040 0.040 0.040 0.0400.040 0.040 0.040 0.040 0.040 0.040 0.040 0.040 0.040 0.040 0.040 0.040 0.040NOTES: 1 Steel grades may be treated with micro-alloying elements such as niobium, vanadium and titanium (for the designation requirements see Clause 4.2).2 For aluminium-killed steels, the maximum silicon content is 0.10%.3 For steel grades with a ‘U’ prefix, e.g. U1040 (see Clause 4.2(a)), the minimum silicon content does not apply and the material is not subject to product analysis or grain size requirements. 4This grade is not included in AS 1442.TABLE 2CHEMICAL COMPOSITION REQUIREMENTS FORMERCHANT QUALITY STEELSChemical composition (cast analysis), percentCarbon Silicon Manganese Phosphorus Sulfur Gradedesignation AS 1443/Min. Max. Max. Min. Max. Max. Max. M1020 M1030 M10400.15 0.25 0.350.25 0.35 0.450.35 0.35 0.350.30 0.30 0.400.90 0.90 0.900.050 0.050 0.0500.050 0.050 0.050NOTE: These grades are not subject to product analysis or grain size requirements.TABLE 3CHEMICAL COMPOSITION REQUIREMENTS FORFREE-CUTTING STEELSChemical composition (cast analysis), percentCarbon Silicon Manganese Phosphorus Sulfur Gradedesignation AS 1443/ Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. X1112 1137 1144 1146 X1147 1214 12L14*0.08 0.32 0.40 0.42 0.40 — —0.15 0.39 0.48 0.49 0.47 0.15 0.15— 0.10 — 0.10 0.10 — —0.10 0.35 0.35 0.35 0.35 0.10 0.101.10 1.35 1.35 0.70 1.60 0.80 0.801.40 1.65 1.65 1.00 1.90 1.20 1.20— — — — — 0.04 0.040.040 0.040 0.040 0.040 0.040 0.09 0.090.20 0.08 0.24 0.08 0.07 0.25 0.250.30 0.13 0.33 0.13 0.12 0.35 0.35* For lead-bearing steels, the lead content is 0.15% to 0.35%.TABLE 4CHEMICAL COMPOSITION REQUIREMENTS FORCARBON-MANGANESE STEELSChemical composition (cast analysis), percent (see Note 1)Carbon Silicon (See Note 2)Manganese Phosphorus SulfurGradedesignation AS 1443/Min. Max. Min. Max. Min. Max. Max. Max. X1320 X1340 0.18 0.380.23 0.430.10 0.100.35 0.351.40 1.401.70 1.700.040 0.0400.040 0.040NOTES: 1 The steels may be treated with micro-alloying elements such as niobium, vanadium and titanium (see Clause 4.2).2For aluminium-killed steels, the maximum silicon content is 0.10%.TABLE 5PRODUCT ANALYSIS TOLERANCES FOR STEELS OF CROSS-SECTIONAL AREA UP TO AND INCLUDING 0.06 m2 EXCEPT FOR SULFUR IN SULFURIZED GRADES (applicable to steels supplied to chemical composition only)Element Limit or maximum ofspecified rangepercent Tolerances over maximum limit or under minimum limitpercentCarbon ≤0.25>0.25 ≤0.55>0.55 0.02 0.03 0.04Manganese ≤0.90>0.90 ≤1.90 0.03 0.06Phosphorus ≤0.040 0.008* Sulfur ≤0.040 0.008* Silicon ≤0.35 0.02 Lead ≥0.15 ≤0.35 0.03*Over maximum only.TABLE 6REQUIREMENTS FOR STEELS WITH SPECIFIED MECHANICALPROPERTIES DEVELOPED BY COLD DRAWING OR COLD ROLLINGMechanical propertiesSpecified size*(dia. orminor sectional dimension)mmGrade designation AS 1443/Chemical composition designations (see Tables 2 and 3) Greater than Less than or equal toYield strength†MPaMin.Tensile strength MPa Min. Elongation on 5.65√So percent Min. D3 D4 D5 D6 D11 D12 D13 D14‡M1020M1030M10401045 X1112 1214 12L14 1137— 16 38 — 16 38 — 16 38 — 16 38 — 16 38 — 16 38 — 16 38 — 16 3816 38 63 16 38 63 16 38 63 16 38 63 16 38 63 16 38 63 16 38 63 16 38 63380 370 340 440 430 410 510 480 460 540 510 500 350 330 290 350 330 290 350 330 290 510 480 460480 460 430 560 540 520 650 610 600 690 650 640 480 430 400 480 430 400 480 430 400 660 640 62012 12 13 10 11 12 8 9 10 8 8 9 8 12 12 7 8 9 7 8 9 7 7 8* Applicable for rounds up to 61 mm diameter, hexagons up to 63 mm across flats and squares up to 51 mm across flats.† When yielding does not occur, calculate 0.2% proof stress.‡ This steel is used for ball couplings for automotive purposes (see AS 4177.2).TABLE 7REQUIREMENTS FOR STEELS WITH SPECIFIED MECHANICALPROPERTIES DEVELOPED BY PROCESSES* OTHERTHAN COLD DRAWING OR COLD ROLLINGMechanical propertiesSpecified diametermmGrade designation AS 1443/Chemical compositiondesignations (see Tables 2 and 3)Greater than Less than orequal toYield strength†MPa Min. Tensile strength MPa Min. Elongation on 5.65√So percent Min. T3 T4 T5 T6 T11 T12 T13 T14M1020M1030 M1040 1045 X1112 1214 12L14 1137— 50 — — — — — — —50 250 260 260 260 260 260 260 260250 230 250 270 300 230 230 230 300410 410 500 540 600 370 370 370 60022 22 20 16 14 17 17 17 14* The mechanical property requirements in the Table are similar to those for hot-rolled products in the machined, turned or ground condition.† When yielding does not occur, calculate 0.2% proof stressTABLE 8TOLERANCE GRADES FOR COLD-FINISHED BARSForm and conditionBright barsRoundsPrecision groundCold drawnTurned and polishedSquare HexagonalFlat(see Note 4)Cold-sized Peeledh8 h10 h11 h11 h11 h11 h11 k12NOTES:1 Out-of-round, out-of-hexagon and out-of-square in bars have tolerances equal to one-half of thetolerance band. 2 The cross-sectional dimensions are measured at a distance of at least 150 mm from the end of theproduct. 3 Cross-sectional dimensions may be checked using instruments such as limit gap gauges, micrometer callipers and three-point measuring devices. Measurement is carried out at room temperature. 4Width tolerances are generally not applied to flats up to 7 mm thick.5 Tolerance grade h7 may be specified for precision ground bars for applications requiring greaterprecision. 6 Tolerance grade h9 may be specified for cold-drawn bright bars for applications requiring greaterprecision. 7 Tolerance grade h10 may be specified for turned and polished bars for applications requiring greater precision.8The tolerance grades have been derived from AS 1654.。

2SA系列(PNP型)三极管参数表

3CG180F
2SA105
锗PNP三极管
900m
-2
-50
-50
100M
40-240
CK77B
2SA1020T
UTC
硅PNP三极管,功率放大，功率开关，配对管2SC2655
900m
-2
-50
-50
100M
40-240
CK77B
2SA1021
TOSHIBA
停产，用2SA1408代替
20
-1.5
-150
20M
3CA10F
2SA1022
PANASONIC
-55
-50
200M
100-320
3CK14H
2SA1032C
HITACHI
硅PNP三极管,高频低噪声放大，配对管2SC458/2SC2310
300m
-100m
-55
-50
200M
100-320
3CK14H
2SA1033
硅PNP三极管
-100m
-30
280M
3CG120A
2SA1034
PANASONIC
-25
200M
50-340
CK77A
2SA0684
PANASONIC
硅PNP三极管,低频功率放大和驱动，配对管2SC1384
1
-1.5
-60
-50
200M
50-340
CK77A
2SA0794
PANASONIC
硅PNP三极管,低频功率放大和驱动，配对管2SC1567
1.2
-500m
-100
-100
120M
2SA1030

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−16
−80−200
−150
−8
−100
IB = −10 mA −50
−40
−4
−30
−20
0
0
−2
−4
−6
−8
−10
Collector-emitter voltage VCE (V)
−3 −1 −0.3 −0.1
−0.001 −0.01
VCE (sat) – IC
―
V
55
― 160
35
60
―
― −1.5 −3.0
V
― −1.0 −1.5
V
―
30
― MHz
― 360 ―
pF
1
2004-07-07
元器件交易网
Marking
TOSHIBA 2SA1943
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2SA1943
2
2004-07-07
元器件交易网
Collector current IC (A)
IC – VCE
−20
Common emitter Tc = 25°C
• Recommended for 100-W high-fidelity audio frequency amplifier output stage.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
Unit
−230
V
−230
V
−5
V
−15
A
−1.5
A
150
W
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
10
1
Infinite heat sink
0.1
0.01
0.001
0.01
Curves should be applied in thermal limited area. (single nonrepetitive pulse)
0.1
1
10
Pulse width tw (s)
100
1000
4
2004-07-07
2SA1943
IC – VBE
−20
Common emitter VCE = −5 V −16
−12
−8
25
−4
Tc = 100°C
−25
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Base-emitter voltage VBE (V)
hFE – IC
300 Tc = 100°C
100 25
30
−25
1 ms*
10 ms*
−10
100 ms* −5
−3
DC operation
Tc = 25°C −1
−0.5
−0.3
*: Single nonrepetitive pulse
Tc = 25°C
−0.1 Curves must be derated
linearly with increase in −0.05 temperature.
V (BR) CEO IC = −50 mA, IB = 0
hFE (1) VCE = −5 V, IC = −1 A
(Note)
hFE (2) VCE (sat)
VCE = −5 V, IC = −7 A IC = −8 A, IB = −0.8 A
VBE
VCE = −5 V, IC = −7 A
fT
VCE = −5 V, IC = −1 A
Cob
VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Min Typ. Max Unit
―
― −5.0 µA
―
― −5.0 µA
−230 ―
10 Common emitter VCE = −5 V
3
−0.01
−0.1
−1
−10
Collector current IC (A)
−100
Collector current IC (A)
Safe Operating Area
−50 −30 IC max (pulsed)*
IC max (continuous)
−0.03 −2
−10
−30
−100
VCEO max −300 −1000
Collector-emitter voltage VCE (V)
3
2004-07-07
元器件交易网
2SA1943
Transient thermal resistance rth (°C/W)
rth – tw
元器件交易网
2SA1943
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
Tc = 100°C
−25 25
−0.1
Common emitter IC/IB = 10
−1
−10
−100
Collector current IC (A)
Collector-emitter saturation voltage VCE (sat) (V)
DC current gain hFE
Collector current IC (A)
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.