SB30H150CT-1中文资料

0.055 (1.40) 0.047 (1.20)
0.067 (1.70) TYP.
0.118 (3.00) TYP.
0.398 (10.10) 0.382 (9.70) 0.343 (8.70)
TYP.
0.331 (8.40) TYP. PIN
123
TO-220AB
0.150 (3.80) 0.139 (3.54)
Maximum average forward rectified current
total device per diode
VRRM VRWM VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
TO-220AB
ITO-220AB
123
MBR30H150CT
123
MBRF30H150CT
TO-262AA
FEATURES • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
123
SB30H150CT-1
PIN 1 PIN 3
PIN 2 CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF TJ
2 x 15 A 150 V 260 A 0.75 V 175 °C
TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling and polarity protection applications.
Revision: 18-Apr-08
元器件交易网www.cecb2b.com
MBR30H150CT, MBRF30H150CT & SB30H150CT-1
Vishay General Semiconductor
Instantaneous Forward Current (A)
100 TJ = 175 °C
Revision: 18-Apr-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com 1
元器件交易网www.cecb2b.com
MBR30H150CT, MBRF30H150CT & SB30H150CT-1
Figure 4. Typical Reverse Characteristics Per Diode
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
10 0Байду номын сангаас0
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
RθJC
1.7
4.0
MBRB 1.7
UNIT V µA mA
UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
MBR30H150CT-E3/45
2.06
ITO-220AB
MBRF30H150CT-E3/45
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
IF = 15 A
TC = 25 °C
0.90
Maximum instantaneous forward voltage per diode (1)
DIA.
0.114 (2.90) 0.106 (2.70)
0.154 (3.90) 0.138 (3.50)
0.634 (16.10) 0.618 (15.70)
1.161 (29.48) 1.106 (28.08)
0.370 (9.40) 0.354 (9.00)
0.523 (13.28) 0.507 (12.88)
10 TJ = 125 °C
1
TJ = 75 °C TJ = 25 °C
0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 88865
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
0.035 (0.90) 0.028 (0.70)
0.100 (2.54) TYP.
0.064 (1.62) 0.056 (1.42)
MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Mounting Torque: 10 in-lbs maximum Polarity: As marked
IR
5.0 1.0
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
Typical thermal resistance per diode
280
TJ = TJ Max.
240
8.3 ms Single Half Sine-Wave
200
160
120
80
40
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage
IRRM ERSM EAS dV/dt TJ, TSTG VAC
MBR30H150CT 150 150 150 30 15
260
1.0 10 20 10 000 - 65 to + 175 1500
UNIT V V V
A
A
A mJ mJ V/µs °C V
Document Number: 88865 For technical questions within your region, please contact one of the following:
Instantaneous Reverse Current (µA)
10 000 1000 100
TJ = 175 °C TJ = 125 °C
10 TJ = 75 °C
1
0.1
TJ = 25 °C
0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%)
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MBR30H150CT, MBRF30H150CT & SB30H150CT-1
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
IF = 15 A IF = 30 A
TC = 125 °C TC = 25 °C
VF
0.75 0.99
IF = 30 A
TC = 125 °C
0.86
Maximum reverse current per diode at working peak reverse voltage (1)
TJ = 25 °C TJ = 125 °C
IFSM
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz Peak non-repetitive reverse surge energy per diode (8/20 µs waveform) Non-repetitive avalanche energy per diode at 25 °C, IAS = 2.0 A, L = 10 mH Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
元器件交易网www.cecb2b.com
MBR30H150CT, MBRF30H150CT & SB30H150CT-1
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 µA
Document Number: 88865 For technical questions within your region, please contact one of the following:
Revision: 18-Apr-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Figure 5. Typical Junction Capacitance Per Diode
100
10 MBRF
1
MBR, MBRB
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
2.20
TO-262AA
SB30H150CT-1E3/45
1.58
PACKAGE CODE 45 45 45
BASE QUANTITY 50/tube 50/tube 50/tube
DELIVERY MODE Tube Tube Tube
Average Forward Current (A) Peak Forward Surge Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
40
35 MBR, MBRB
30 MBRF
25
20
15
10
5
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 1. Forward Derating Curve (Total)