5STP 16F2801中文资料

V DRM=2800VI T(AV)M=1512AI T(RMS)=2375AI TSM=23.6×103AV(T0)=1.02Vr T=0.265mΩPhase Control Thyristor5STP 16F2801Doc. No. 5SYA1064-01 July 03•Low on-state and switching losses•Designed for traction, energy and industrial applications•Optimum power handling capabilityBlockingMaximum rated values 1)Symbol Conditions5STP 16F28015STP 16F26015STP 16F2401 V DRM, V RRM f = 50 Hz, t p = 10 ms2800 V2600 V2400 VdV/dt crit Exp. to 0.67 x V DRM, T vj = 125°C1000 V/µsCharacteristic valuesParameter Symbol Conditions min typ max UnitForward leakage current I DRM V DRM, T vj = 125°C150mA Reverse leakage current I RRM V RRM, T vj = 125°C150mAMechanical dataMaximum rated values 1)Parameter Symbol Conditions min typ max UnitMounting force F M202224kN Acceleration a Device unclamped50m/s2 Acceleration a Device clamped100m/s2 Characteristic valuesParameter Symbol Conditions min typ max UnitWeight m0.48kg Surface creepage distance D S25mm Air strike distance D a13mm1) Maximum rated values indicate limits beyond which damage to the device may occur元器件交易网ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.On-stateMaximum rated values1)ParameterSymbol Conditions min typ max Unit Average on-state current I T(AV)M Half sine wave, T c = 70°C 1512A RMS on-state current I T(RMS)2375A Peak non-repetitive surge currentI TSM 23.60×103A Limiting load integral I 2t tp = 10 ms, T vj = 125 °C,V D = V R = 0 V2.79×106A 2s Peak non-repetitive surge currentI TSM 25.20×103A Limiting load integralI 2ttp = 8.3 ms, T vj = 125 °C,V D = V R = 0 V2.64×106A 2s Characteristic valuesParameter Symbol Conditions mintypmaxUnit On-state voltage V T I T = 2000 A, T vj = 125 °C 1.55V Threshold voltage V (T0) 1.02V Slope resistance r T I T = 1900 A - 5800 A, T vj = 125 °C0.265m ΩHolding current I H T vj = 25 °C 170mA T vj = 125 °C 90mA Latching currentI LT vj = 25 °C 450mA T vj = 125 °C350mASwitchingMaximum rated values1)ParameterSymbol Conditions min typ maxUnit Critical rate of rise of on-state currentdi/dt crit Cont.f = 50 Hz 200A/µs Critical rate of rise of on-state currentdi/dt critT vj = 125 °C,I T = I T(AV),V D ≤ 0.67 V DRM ,I FG = 2 A, t r = 0.3 µsCont.f = 1 Hz1000A/µs Circuit-commutated turn-off timet q T vj = 125°C, I TRM = 2000 A,V R = 200 V, di T /dt = -12.5 A/µs,V D ≤ 0.67⋅V DRM , dv D /dt = 50V/µs200µsCharacteristic valuesParameter Symbol Conditions mintyp max Unit Recovery chargeQ rrT vj = 125°C, I TRM = 2000 A,V R = 200 V,di T /dt = -12.5 A/µs2600µAsGate turn-on delay time t gd V D = 0.4⋅V RM , I FG = 2 A, t r = 0.3 µs, T vj = 25 °C2µsTriggeringMaximum rated values1)ParameterSymbol Conditions min typ max Unit Peak forward gate voltage V FGM 12V Peak forward gate current I FGM 10A Peak reverse gate voltage V RGM 10V Mean forward gate powerP G(AV)3W Characteristic valuesParameter Symbol Conditions min typ maxUnit Gate-trigger voltageV GTT vj = -40 °C T vj = 25 °C T vj = 125 °C0.25432VGate-trigger current I GT T vj = -40 °C T vj = 25 °C T vj = 125 °C10500250150mAThermalMaximum rated values1)Parameter Symbol Conditions min typ max Unit Operating junction temperature rangeT vj-40125°C Storage temperature range T stg -40125°C Characteristic valuesParameterSymbol Conditionsmintyp max Unit Thermal resistance junction to caseR th(j-c)Double-side cooled 16K/kW R th(j-c)A Anode-side cooled 25K/kW R th(j-c)CCathode-side cooled 45K/kW Thermal resistance case to heatsinkR th(c-h)Double-side cooled 4K/kW R th(c-h)Single-side cooled8K/kWAnalytical function for transient thermalimpedance:)e -(1R = (t)Z n1i t/-i c)-th(j i å=τi 1234R i (K/kW) 5.5007.240 2.000 1.340τi (s)0.46530.15330.03750.0034Fig. 1 Transient thermal impedance junction-to case.Fig. 2Max. on-state voltage characteristics Fig. 3Surge forward current vs. pulse length. Halfsine wave, single pulse, V R = 0 VFig. 4Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f Fig. 5Forward power loss vs. average forward current, square waveform, f = 50 Hz, T = 1/fFig. 6Max. case temperature vs.average forward current, sine waveform, f = 50Hz, T = 1/f Fig. 7Max. case temperature vs.average forward current, square waveform, f = 50Hz, T = 1/fABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.ABB Switzerland Ltd Doc. No. 5SYA1064-01 July 03Semiconductors Fabrikstrasse 3CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419Fax +41 (0)58 586 1306RED WHITEFig. 8Device Outline Drawing.。