2SK2372
2SK3152中文资料
—
100
resistance
RDS(on)
—
130
Forward transfer admittance
|yfs|
5.5 9.5
Input capacitance
Ciss —
580
Output capacitance
Coss —
240
Reverse transfer capacitance
Crss —
Rg > 50 Ω
6
4
2
0 25 50 75 100 125 150
Channel Temperature Tch (°C)
Vin 15 V
Avalanche Test Circuit
Avalanche Waveform
V DS Monitor
Rg
50 Ω
L
I AP Monitor
D. U. T
VDD
VDSS VGSS ID I Note1
D(pulse)
I DR I Note3
AP
E Note3 AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Switching Characteristics 500
300
t d(off)
100 tf
30
10
tr t d(on)
3
1 0.1 0.3
2SK系列三极管
2SA系列三极管参数2SA1006B SI-P 250V 1.5A 25W 80MHz2SA1009 SI-P 350V 2A 15W |2SA1011 SI-P 160V 1.5A 25W 120MHz2SA1013 SI-P 160V 1A 0.9W 50MHz |2SA1015 SI-P 50V 0.15A 0.4W 80MHz2SA1016 SI-P 100V 0.05A 0.4W 110MHz |2SA1017 SI-P 120V 50mA 0.5W 110MHz2SA1018 SI-P 250V 70mA 0.75W >50MHz |2SA1020 SI-P 50V 2A 0.9W 100MHz2SA1027 SI-P 50V 0.2A 0.25W 100MHz |2SA1029 SI-P 30V 0.1A 0.2W 280MHz2SA1034 SI-P 35V 50mA 0.2W 200MHz |2SA1037 SI-P 50V 0.4A 140MHz FR2SA1048 SI-P 50V 0.15A 0.2W 80MHz |2SA1049 SI-P 120V 0.1A 0.2W 100MHz2SA1061 SI-P 100V 6A 70W 15MHz |2SA1062 SI-N 120V 7A 80W 15MHz2SA1065 SI-P 150V 10A 120W 50MHz |2SA1084 SI-P 90V 0.1A 0.4W 90MHz2SA1103 SI-P 100V 7A 70W 20MHz |2SA1106 SI-P 140V 10A 100W 20MHz2SA1110 SI-P 120V 0.5A 5W 250MHz |2SA1111 SI-P 150V 1A 20W 200MHz2SA1112 SI-P 180V 1A 20W 200MHz |2SA1115 SI-P 50V 0.2A 200MHz UNI2SA1120 SI-P 35V 5A 170MHz |2SA1123 SI-P 150V 50mA 0.75W 200MHz2SA1124 SI-P 150V 50mA 1W 200MHz |2SA1127 SI-P 60V 0.1A 0.4W 200MHz2SA1141 SI-P 115V 10A 100W 90MHz |2SA1142 SI-P 180V 0.1A 8W 180MHz2SA1145 SI-P 150V 50mA 0.8W 200MHz |2SA1150 SI-P 35V 0.8A 0.3W 120MHz2SA1156 SI-P 400V 0.5A 10W POWER |2SA1160 SI-P 20V 2A 0.9W 150MHz2SA1163 SI-P 120V 0.1A 100MHz |2SA1170 SI-P 200V 17A 200W 20MHz2SA1185 SI-P 50V 7A 60W 100MHz |2SA1186 SI-P 150V 10A 100W2SA1200 SI-P 150V 50mA 0.5W 120MHz |2SA1201 SI-P 120V 0.8A 0.5W 120MHz2SA1206 SI-P 15V 0.05A 0.6W |2SA1208 SI-P 180V 0.07A 0.9W |2SA1209 SI-P 180V 0.14A 10W2SA1210 SI-P 200V 0.14A 10W |2SA1213 SI-P 50V 2A 0.5W 120MHz2SA1215 SI-P 160V 15A 150W 50MHz | 2SA1216 SI-P 180V 17A 200W 40MHz2SA1220A SI-P 120V 1.2A 20W 160MHz | 2SA1221 SI-P 160V 0.5A 1W 45MHz2SA1225 SI-P 160V 1.5A 15W 100MHz | 2SA1227A SI-P 140V 12A 120W 60MHz2SA1232 SI-P 130V 10A 100W 60MHz | 2SA1241 SI-P 50V 2A 10W 100MHz2SA1242 SI-P 35V 5A 1W 170MHz |2SA1244 SI-P 60V 5A 20W 60MHz2SA1249 SI-P 180V 1.5A 10W 120MHz | 2SA1261 SI-P 100V 10A 60W POWER2SA1262 SI-P 60V 4A 30W 15MHz |2SA1264N SI-P 120V 8A 80W 30MHz2SA1265N SI-P 140V 10A 100W 30MHz | 2SA1266 SI-P 50V 0.15A 0.4W POWER2SA1268 SI-N 120V 0.1A 0.3W 100MHz | 2SA1270 SI-P 35V 0.5A 0.5W 200MHz2SA1271 SI-P 30V 0.8A 0.6W 120MHz | 2SA1275 SI-P 160V 1A 0.9W 20MHz2SA1282 SI-P 20V 2A 0.9W 80MHz |2SA1283 SI-P 60V 1A 0.9W 85MHz2SA1286 SI-P 30V 1.5A 0.9W 90MHz | 2SA1287 SI-P 50V 1A 0.9W 90MHz2SA1292 SI-P 80V 15A 70W 100MHz | 2SA1293 SI-P 100V 5A 30W 0.2us2SA1294 SI-P 230V 15A 130W |2SA1295 SI-P 230V 17A 200W 35MHz2SA1296 SI-P 20V 2A 0.75W 120MHz | 2SA1298 SI-P 30V 0.8A 0.2W 120MHz2SA1300 SI-P 10V 2A 0.75W 140MHz | 2SA1302 SI-P 200V 15A 150W 25MHz2SA1303 SI-P 150V 14A 125W 50MHz | 2SA1306 SI-P 160V 1.5A 20W2SA1306A SI-P 180V 1.5A 20W 100MHz | 2SA1307 SI-P 60V 5A 20W 0.1us2SA1309 SI-P 30V 0.1A 0.3W 80MHz | 2SA1310 SI-P 60V 0.1A 0.3W 200MHz2SA1315 SI-P 80V 2A 0.9W 0.2us |2SA1317 SI-P 60V 0.2A 0.3W 200MHz | 2SA1318 SI-P 60V 0.2A 0.5W 200MHz2SA1319 SI-P 180V 0.7A 0.7W 120MHz | 2SA1321 SI-P 250V 50mA 0.9W 100MHz2SA1328 SI-P 60V 12A 40W 0.3us |2SA1329 SI-P 80V 12A 40W 0.3us2SA1345 SI-N 50V 0.1A 0.3W 250MHz | 2SA1346 SI-P 50V 0.1A 200MHz2SA1348 SI-P 50V 0.1A 200MHz |2SA1349 P-ARRAY 80V 0.1A 0.4W 1702SA1352 SI-P 200V 0.1A 5W 70MHz | 2SA1357 SI-P 35V 5A 10W 170MHz2SA1358 SI-P 120V 1A 10W 120MHz | 2SA1359 SI-P 40V 3A 10W 100MHz2SA1360 SI-P 150V 50mA 5W 200MHz | 2SA1361 SI-P 250V 50mA 80MHz2SA1370 SI-P 200V 0.1A 1W 150MHz | 2SA1371E SI-P 300V 0.1A 1W 150MHz2SA1376 SI-P 200V 0.1A 0.75W 120MHz | 2SA1380 SI-P 200V 0.1A 1.2W2SA1381 SI-P 300V 0.1A 150MHz |2SA1382 SI-P 120V 2A 0.9W 0.2us2SA1383 SI-P 180V 0.1A 10W 180MHz | 2SA1386 SI-P 160V 15A 130W 40MHz2SA1387 SI-P 60V 5A 25W 80MHz | 2SA1392 SI-P 60V 0.2A 0.4W 200MHz2SA1396 SI-P 100V 10A 30W |2SA1399 SI-P 55V 0.4A 0.9W 150MHz2SA1400 SI-P 400V 0.5A 10W |2SA1403 SI-P 80V 0.5A 10W 800MHz2SA1405 SI-P 120V 0.3A 8W 500MHz | 2SA1406 SI-P 200V 0.1A 7W 400MHz2SA1407 SI-P 150V 0.1A 7W 400MHz | 2SA1413 SI-P 600V 1A 10W 26MHz2SA1428 SI-P 50V 2A 1W 100MHz | 2SA1431 SI-P 35V 5A 1W 170MHz2SA1441 SI-P 100V 5A 25W <300ns |2SA1443 SI-P 100V 10A 30W2SA1450 SI-P 100V 0.5A 0.6W 120MHz | 2SA1451 SI-P 60V 12A 30W 70MHz2SA1460 SI-P 60V 1A 1W <40NS |2SA1470 SI-P 80V 7A 25W 100MHz2SA1475 SI-P 120V 0.4A 15W 500MHz |2SA1477 SI-P 180V 0.14A 10W 150MHz |2SA1488 SI-P 60V 4A 25W 15MHz2SA1489 SI-P 80V 6A 60W 20MHz |2SA1490 SI-P 120V 8A 80W 20MHz2SA1491 SI-P 140V 10A 100W 20MHz |2SA1494 SI-P 200V 17A 200W 20MHz2SA1507 SI-P 180V 1.5A 10W 120MHz |2SA1515 SI-P 40V 1A 0.3W 150MHz2SA1516 SI-P 180V 12A 130W 25MHz |2SA1519 SI-P 50V 0.5A 0.3W 200MHz2SA1535A SI-P 180V 1A 40W 200MHz |2SA1538 SI-P 120V 0.2A 8W 400MHz2SA1539 SI-P 120V 0.3A 8W 400MHz |2SA1540 SI-P 200V 0.1A 7W 300MHz2SA1541 SI-P 200V 0.2A 7W 300MHz |2SA1553 SI-P 230V 15A 150W 25MHz2SA1566 SI-N 120V 0.1A 0.15W 130MHz |2SA1567 SI-P 50V 12A 35W 40MHz2SA1568 SI-P 60V 12A 40W | 2SA1577 SI-P 32V 0.5A 0.2W 200MHz2SA1593 SI-P 120V 2A 15W 120MHz |2SA1601 SI-P 60V 15A 45W2SA1606 SI-P 180V 1.5A 15W 100MHz | 2SA1615 SI-P 30V 10A 15W 180MHz 2SA1624 SI-P 300V 0.1A 0.5W 70MHz | 2SA1625 SI-P 400V 0.5A 0.75W2SA1626 SI-P 400V 2A 1W 0.5/2.7us |2SA1633 SI-P 150V 10A 100W 20MHz2SA1643 SI-P 50V 7A 25W 75MHz |2SA1667 SI-P 150V 2A 25W 20MHz2SA1668 SI-P 200V 2A 25W 20MHz |2SA1670 SI-P 80V 6A 60W 20MHz2SA1671 SI-P 120/120V 8A 75W 20MHz |2SA1672 SI-P 140V 10A 80W 20MHz2SA1673 SI-P 180V 15A 85W 20MHz |2SA1680 SI-P 60V 2A 0.9W 100/400ns2SA1684 SI-P 120V 1.5A 20W 150MHz |2SA1694 SI-P 120/120V 8A 80W 20MHz2SA1695 SI-P 140V 10A 80W 20MHz |2SA1703 SI-P 30V 1.5A 1W 180MHz2SA1706 SI-P 60V 2A 1W |2SA1708 SI-P 120V 1A 1W 120MHz2SA1726 SI-P 80V 6A 50W 20MHz |2SA1776 SI-P 400V 1A 1W2SA1803 SI-P 80V 6A 55W 30MHz |2SA1837 SI-P 230V 1A 20W 70MHz2SA1962 SI-P 230V 15A 130W 25MHz2SA329 GE-P 15V 10mA 0.05W |2SA467 SI-P 40V 0,4A 0,3W2SA473 SI-P 30V 3A 10W 100MHz | 2SA483 SI-P 150V 1A 20W 9MHz2SA493 SI-P 50V 0.05A 0.2W 80MHz | 2SA495 SI-P 35V 0.1A 0.2W 200MHz2SA562 SI-P 30V 0.5A 0.5W 200MHz | 2SA566 SI-P 100V 0.7A 10W 100MHz2SA608 SI-N 40V 0.1A 0.1W 180MHz | 2SA614 SI-P 80V 1A 15W 30MHz2SA620 SI-P 30V 0.05A 0.2W 120MHz | 2SA626 SI-P 80V 5A 60W 15MHz2SA628 SI-P 30V 0.1A 100MHz |2SA639 SI-P 180V 50mA 0,25W2SA642 SI-P 30V 0.2A 0.25W 200MHz | 2SA643 SI-P 40V 0.5A 0.5W 180MHz2SA653 SI-P 150V 1A 15W 5MHz | 2SA684 SI-P 60V 1A 1W 200MHz2SA699 SI-P 40V 2A 10W 150MHz | 2SA708A SI-P 100V 0.7A 0.8W 50MHz2SA720 SI-P 60V 0.5A 0.6W 200MHz | 2SA725 SI-P 35V 0.1A 0.15W 100MHz2SA733 SI-P 60V 0.15A 0.25W 50MHz | 2SA738 SI-P 25V 1.5A 8W 160MHz2SA747 SI-P 120V 10A 100W 15MHz | 2SA756 SI-P 100V 6A 50W 20MHz2SA762 SI-P 110V 2A 23W 80MHz | 2SA765 SI-P 80V 6A 40W 10MHz2SA768 SI-P 60V 4A 30W 10MHz | 2SA769 SI-P 80V 4A 30W 10MHz2SA770 SI-P 60V 6A 40W 10MHz | 2SA771 SI-P 80V 6A 40W 2MHz2SA777 SI-P 80V 0.5A 0.75W 120MHz | 2SA778A SI-P 180V 0.05A 0.2W 60MHz2SA781 SI-P 20V 0.2A 0.2W <80/16 |2SA794 SI-P 100V 0.5A 5W 120MHz2SA794A SI-P 120V 0.5A 5W 120MHz | 2SA812 SI-P 50V 0.1A 0.15W2SA814 SI-P 120V 1A 15W 30MHz | 2SA816 SI-P 80V 0.75A 1.5W 100MHz2SA817 SI-P 80V 0.3A 0.6W 100MHz | 2SA817A SI-P 80V 0.4A 0.8W 100MHz2SA838 SI-P 30V 30mA 0.25W 300MHz2SA839 SI-P 150V 1.5A 25W 6MHz |2SA841 SI-P 60V 0.05A 0.2W 140MHz2SA858 SI-P 150V 50mA 0.5W 100MHz |2SA872 SI-P 90V 0.05A 0.2W 120MHz2SA872A SI-P 120V 50mA 0.3W 120MHz |2SA884 SI-P 65V 0.2A 0.27W 140MHz2SA885 SI-P 45V 1A 5W 200MHz |2SA886 SI-P 50V 1.5A 1.2W2SA893 SI-P 90V 50mA 0.3W | 2SA900 SI-P 18V 1A 1.2W2SA914 SI-P 150V 0.05A 200MHz |2SA915 SI-P 120V 0.05A 0.8W 80MHz2SA916 SI-P 160V 0.05A 1W 80MHz |2SA921 SI-P 120V 20mA 0.25W 200MHz2SA933 SI-P 50V 0.1A 0.3W | 2SA934 SI-P 40V 0.7A 0.75W2SA935 SI-P 80V 0.7A 0.75W 150MHz |2SA937 SI-P 50V 0.1A 0.3W 140MHz2SA940 SI-P 150V 1.5A 25W 4MHz |2SA941 SI-P 120V 0.05A 0.3W 150MHz2SA949 SI-P 150V 50mA 0.8W 120MHz |2SA965 SI-P 120V 0.8A 0.9W 120MHz2SA966 SI-P 30V 1.5A 0.9W 120MHz |2SA968 SI-P 160V 1.5A 25W 100MHz2SA970 SI-P 120V 0.1A 100MHz |2SA982 SI-P 140V 8A 80W 20MHz2SA984 SI-P 60V 0.5A 0.5W 120MHz |2SA985 SI-P 120V 1.5A 25W 180MHz2SA988 SI-P 120V 0.05A 0.5W |2SA991 SI-P 60V 0.1A 0.5W 90MHz2SA992 SI-P 100V 0.05A 0.2W |2SA995 SI-P 100V 0.05A 0.4W 100MHz2SB系列三极管参数2SB1009 SI-P 40V 2A 10W 100MHz | 2SB1010 SI-P 40V 2A 0.75W 100MHz2SB1012K P-DARL 120V 1.5A 8W | 2SB1013 SI-P 20V 2A 0.7W2SB1015 SI-P 60V 3A 25W 0.4us | 2SB1016 SI-P 100V 5A 30W 5MHz2SB1017 SI-P 80V 4A 25W 9MHz | 2SB1018 SI-P 100V 7A 30W 0.4us2SB1020 P-DARL+D 100V 7A 30W 0.8us | 2SB1023 P-DARL+D 60V 3A 20W B=5K 2SB1035 SI-P 30V 1A 0.9W 100MHz | 2SB1039 SI-P 100V 4A 40W 20MHz2SB1050 SI-P 30V 5A 1W 120MHz | 2SB1055 SI-P 120V 6A 70W 20MHz2SB1065 SI-P 60V 3A 10W | 2SB1066 SI-P 50V 3A 1W 70MHz2SB1077 P-DARL 60V 4A 40W B>1K | 2SB1086 SI-P 160V 1.5A 20W 50MHz2SB1098 P-DARL+D 100V 5A 20W B=80 | 2SB1099 P-DARL+D 100V 8A 25W B=6K 2SB1100 P-DARL+D 100V 10A 30W B=6 | 2SB1109 SI-P 160V 0.1A 1.25W2SB1109S SI-P 160V 0.1A 1.25W | 2SB1117 SI-P 30V 3A 1W 280MHz2SB1120 SI-P 20V 2.5A 0.5W 250MHz | 2SB1121T SI-P 30V 2A 150MHz2SB1123 SI-P 60V 2A 0.5W 150MHz | 2SB1132 SI-P 40V 1A 0.5W 150MHz2SB1133 SI-P 60V 3A 25W 40MHz | 2SB1134 SI-P 60V 5A 25W 30W2SB1135 SI-P 60V 7A 30W 10MHz | 2SB1136 SI-P 60V 12A 30W 10MHz2SB1140 SI-P 25V 5A 10W 320MHz | 2SB1141 SI-P 20V 1.2A 10W 150MHz2SB1143 SI-P 60V 4A 10W 140MHz | 2SB1146 P-DARL 120V 6A 25W2SB1149 P-DARL 100V 3A 15W B=10K | 2SB1151 SI-P 60V 5A 20W2SB1154 SI-P 130V 10A 70W 30MHz | 2SB1156 SI-P 130V 20A 100W2SB1162 SI-P 160V 12A 120W | 2SB1163 SI-P 170V 15A 150W2SB1166 SI-P 60V 8A 20W 130MHz | 2SB1168 SI-P 120V 4A 20W 130MHz2SB1182 SI-P 40V 2A 10W 100MHz | 2SB1184 SI-P 60V 3A 15W 70MHz2SB1185 SI-P 50V 3A 25W 70MHz | 2SB1186 SI-P 120V 1.5A 20W 50MHz2SB1187 SI-P 80V 3A 35W | 2SB1188 SI-P 40V 2A 100MHz2SB1202 SI-P 60V 3A 15W 150MHz | 2SB1203 SI-P 60V 5A 20W 130MHz2SB1204 SI-P 60V 8A 20W 130MHz | 2SB1205 SI-P 25V 5A 10W 320MHz2SB1212 SI-P 160V 1.5A 0.9W 50MHz | 2SB1223 P-DARL+D 70V 4A 20W 20MHz2SB1236 SI-P 120V 1.5A 1W 50MHz | 2SB1237 SI-P 40V 1A 1W 150MHz2SB1238 SI-P 80V 0.7A 1W 100MHz | 2SB1240 SI-P 40V 2A 1W 100MHz2SB1243 SI-P 60V 3A 1W | 2SB1254 P-DARL 160V 7A 70W2SB1255 P-DARL 160V 8A 100W B>5K | 2SB1258 P-DARL+D 100V 6A 30W B>1K 2SB1274 SI-P 60V 3A 30W 100MHz | 2SB1282 P-DARL+D 100V 4A 25W 50MHz 2SB1292 SI-P 80V 5A 30W | 2SB1302 SI-P 25V 5A 320MHz2SB1318 P-DARL+D 100V 3A 1W B>200 | 2SB1326 SI-P 30V 5A 0.3W 120MHz2SB1329 SI-P 40V 1A 1.2W 150MHz | 2SB1330 SI-P 32V 0.7A 1.2W 100MHz2SB1331 SI-P 32V 2A 1.2W 100MHz | 2SB1353E SI-P 120V 1.5A 1.8W 50MHz2SB1361 SI-P 150V 9A 100W 15MHz | 2SB1370 SI-P 60V 3A 30W 15MHz2SB1373 SI-P 160V 12A 2.5W 15MHz | 2SB1375 SI-P 60V 3A 25W 9MHz2SB1382 P-DARL+D 120V 16A 75W B>2 | 2SB1393 SI-P 30V 3A 2W 30MHz2SB1420 SI-P 120V 16A 80W 50MHz | 2SB1425 SI-P 20V 2A 1W 90MHz2SB1429 SI-P 180V 15A 150W 10MHz | 2SB1434 SI-P 50V 2A 1W 110MHz2SB1468 SI-P 60/30V 12A 25W | 2SB1470 P-DARL 160V 8A 150W B>5K2SB1490 P-DARL 160V 7A 90W B>5K | 2SB1493 P-DARL 160/140V 7A 70W 202SB1503 P-DARL 160V 8A 120W B>5K | 2SB1556 P-DARL 140V 8A 120W B>5K2SB1557 P-DARL 140V 7A 100W B>5K | 2SB1559 P-DARL 160V 8A 80W B>5K2SB1560 P-DARL 160V 10A 100W 50MHz | 2SB1565 SI-P 80V 3A 25W 15MHz2SB1587 P-DARL+D 160V 8A 70W B>5K | 2SB1624 P-DARL 110V 6A 60W B>5K2SB206 GE-P 80V 30A 80W | 2SB324 GE-P 32V 1A 0.25W2SB337 GE-P 50V 7A 30W LF-POWER | 2SB407 GE-P 30V 7A 30W2SB481 GE-P 32V 1A 6W 15KHz | 2SB492 GE-P 25V 2A 6W2SB527 SI-P 110V 0.8A 10W 70MHz | 2SB531 SI-P 90V 6A 50W 8MHz2SB536 SI-P 130V 1.5A 20W 40MHz | 2SB537 SI-P 130V 1.5A 20W 60MHz2SB541 SI-P 110V 8A 80W 9MHz | 2SB544 SI-P 25V 1A 0.9W 180MHz2SB546A SI-P 200V 2A 25W 5MHz | 2SB549 SI-P 120V 0.8A 10W 80MHz2SB557 SI-P 120V 8A 80W | 2SB560 SI-P 100V 0.7A 0.9W 100MHz2SB561 SI-P 25V 0.7A 0.5W | 2SB564 SI-P 30V 1A 0.8W2SB598 SI-P 25V 1A 0.5W 180MHz | 2SB600 SI-P 200V 15A 200W 4MHz2SB601 P-DARL 100V 5A 30W | 2SB605 SI-P 60V 0.7A 0.8W 120MHz2SB621 SI-N 25V 1.5A 0.6W 200MHz | 2SB621A SI-N 50V 1A 0.75W 200MHz2SB631 SI-P 100V 1A 8W | 2SB632 SI-P 25V 2A 10W 100MHz2SB633 SI-P 100V 6A 40W 15MHz | 2SB637 SI-P 50V 0.1A 0.3W 200MHz2SB641 SI-P 30V 0.1A 120MHz | 2SB647 SI-P 120V 1A 0.9W 140MHz2SB649A SI-P 160V 1.5A 1W 140MHz | 2SB656 SI-P 160V 12A 125W 20MHz2SB673 P-DARL+D 100V 7A 40W 0.8us | 2SB676 P-DARL 100V 4A 30W 0.15us2SB681 SI-N 150V 12A 100W 13MHz | 2SB688 SI-P 120V 8A 80W 10MHz2SB700 SI-P 160V 12A 100W | 2SB703 SI-P 100V 4A 40W 18MHz2SB705 SI-P 140V 10A 120W 17MHz | 2SB707 SI-P 80V 7A 40W POWER2SB709 SI-P 45V 0.1A 0.2W 80MHz | 2SB716 SI-P 120V 0.05A 0.75W2SB720 SI-P 200V 2A 25W 100MHz | 2SB727 P-DARL+D 120V 6A 50W B>1K2SB731 SI-P 60V 1A 10W 75MHz | 2SB733 SI-P 20V 2A 1W >50MHz2SB734 SI-P 60V 1A 1W 80MHz | 2SB739 SI-P 20/16V 2A 0.9W 80MHz2SB740 SI-P 70V 1A 0.9W | 2SB744 SI-P 70V 3A 10W 45MHz2SB750 P-DARL+D 60V 2A 35W B>100 | 2SB753 SI-P 100V 7A 40W 0.4us2SB764 SI-P 60V 1A 0.9A 150MHz | 2SB765 P-DARL+D 120V 3A 30W B>1K2SB766 SI-P 30V 1A 200MHz | 2SB772 SI-P 40V 3A 10W 80MHz2SB774 SI-P 30V 0.1A 0.4W 150MHz | 2SB775 SI-P 100V 6A 60W 13MHz2SB776 SI-P 120V 7A 70W 15MHz | 2SB788 SI-P 120V 0.02A 0.4W 150MHz2SB791 P-DARL+D 120V 8A 40W B>10 | 2SB794 P-DARL+D 60V 1.5A 10W B=7 2SB795 P-DARL+D 80V 1.5A 10W B<3 | 2SB808 SI-P 20V 0.7A 0.25W 250MHz2SB810 SI-P 30V 0.7A 0.35W 160MHz | 2SB815 SI-P 20V 0.7A 0.25W 250MHz2SB816 SI-P 150V 8A 80W 15MHz | 2SB817 SI-P 160V 12A 100W2SB817F SI-P 160V 12A 90W 15MHz | 2SB819 SI-P 50V 1.5A 1W 150MHz2SB822 SI-P 40V 2A 0.75W 100MHz | 2SB824 SI-P 60V 5A 30W 30 MHz2SB825 SI-P 60V 7A 40W 10MHz | 2SB826 SI-P 60V 12A 40W 10MHz2SB827 SI-P 60V 7A 80W 10MHz | 2SB828 SI-P 60V 12A 80W 10MHz2SB829 SI-P 60V 15A 90W 20MHz | 2SB857 SI-P 50V 4A 40W NF/S-L2SB861 SI-P 200V 2A 30W | 2SB863 SI-P 140V 10A 100W 15MHz2SB865 P-DARL 80V 1.5A 0.9W | 2SB873 SI-P 30V 5A 1W 120MHz2SB882 P-DARL+D 70V 10A 40W B>5K | 2SB883 P-DARL+D 70V 15A 70W B=5K 2SB884 P-DARL 110V 3A 30W B=4K | 2SB885 P-DARL+D 110V 3A 35W B=4K 2SB891 SI-P 40V 2A 5W 100MHz | 2SB892 SI-P 60V 2A 1W2SB895A P-DARL 60V 1A B=8000 | 2SB897 P-DARL+D 100V 10A 80W B>12SB908 P-DARL+D 80V 4A 15W 0.15us | 2SB909 SI-P 40V 1A 1W 150MHz2SB922 SI-P 120V 12A 80W 20MHz | 2SB926 SI-P 30V 2A 0.75W2SB938A P-DARL+D 60V 4A 40W B>1K | 2SB940 SI-P 200V 2A 35W 30MHz2SB941 SI-P 60V 3A 35W POWER | 2SB945 SI-P 130V 5A 40W 30MHz2SB946 SI-P 130V 7A 40W 30MHz | 2SB950A P-DARL+D 80V 4A 40W B>1K 2SB953A SI-P 50V 7A 30W 150MHz | 2SB955 P-DARL+D 120V 10A 50W B=4 2SB975 P-DARL+D 100V 8A 40W B>6K | 2SB976 SI-P 27V 5A 0.75W 120MHz 2SB985 SI-P 60V 3A 1W 150MHz | 2SB986 SI-P 60V 4A 10W 150MHz2SB988 SI-P 60V 3A 30W <400/22002SC系列三极管参数2SC1000 SI-N 55V 0.1A 0.2W 80MHz2SC1008 SI-N 80V 0.7A 0.8W 75MHz | 2SC1012A SI-N 250V 60mA 0.75W >80MHz 2SC1014 SI-N 50V 1.5A 7W | 2SC1017 SI-N 75V 1A 60mW 120MHz2SC1030 SI-N 150V 6A 50W | 2SC1046 SI-N 1000V 3A 25W2SC1047 SI-N 30V 20mA 0.4W 650MHz | 2SC1050 SI-N 300V 1A 40W2SC1051 SI-N 150V 7A 60W 8MHz | 2SC1061 SI-N 50V 3A 25W 8MHz=H1062SC1070 SI-N 30V 20mA 900MHz | 2SC1080 SI-N 110V 12A 100W 4MHz2SC109 SI-N 50V 0.6A 0.6W | 2SC1096 SI-N 40V 3A 10W 60MHz2SC1106 SI-N 350V 2A 80W | 2SC1114 SI-N 300V 4A 100W 10MHz2SC1115 SI-N 140V 10A 100W 10MHz | 2SC1116 SI-N 180V 10A 100W 10MHz2SC1161 SI-P 160V 12A 120W | 2SC1162 SI-N 35V 1.5A 10W 180MHz2SC1172 SI-N 1500V 5A 50W | 2SC1195 SI-N 200V 2.5A 100W2SC1213C SI-N 50V 0.5A 0.4W UNI | 2SC1214 SI-N 50V 0.5A 0.6W 50MHz2SC1215 SI-N 30V 50mA 0.4W 1.2GHZ | 2SC1216 SI-N 40V 0.2A 0.3W <20/402SC1226 SI-N 40/50V 2A 10W 150MHz | 2SC1238 SI-N 35V 0.15A 5W 1.7GHz2SC1247A SI-N 50V 0.5A 0.4W 60MHz | 2SC1308 SI-N 1500V 7A 50W2SC1312 SI-N 35V 0.1A 0.15W 100MHz | 2SC1318 SI-N 60V 0.5A 0.6W 200MHz2SC1343 SI-N 150V 10A 100W 14MHz | 2SC1345 SI-N 55V 0.1A 0.1W 230MHz2SC1359 SI-N 30V 30mA 0.4W 250MHz | 2SC1360 SI-N 50V 0.05A 1W >300MHz 2SC1362 SI-N 50V 0.2A 0.25W 140MHz | 2SC1368 SI-N 25V 1.5A 8W 180MHz2SC1382 SI-N 80V 0.75A 5W 100MHz | 2SC1384 SI-N 60V 1A 1W 200MHz2SC1393 SI-N 30V 20mA 250 mW 700MHz | 2SC1398 SI-N 70V 2A 15W2SC1413A SI-N 1200V 5A 50W | 2SC1419 SI-N 50V 2A 20W 5MHz2SC1426 SI-N 35V 0.2A 2.7GHz | 2SC1431 SI-N 110V 2A 23W 80MHz2SC1432 N-DARL 30V 0.3A 0.3W B=40 | 2SC1439 SI-N 150V 50mA 0.5W 130MHz 2SC1445 SI-N 100V 6A 40W 10MHz | 2SC1446 SI-N 300V 0.1A 10W 55MHz2SC1447 SI-N 300V 0.15A 20W 80MHz | 2SC1448 SI-N 150V 1.5A 25W 3MHz2SC1449 SI-N 40V 2A 5W 60MHz | 2SC1450 SI-N 150V 0.4A 20W2SC1454 SI-N 300V 4A 50W 10MHz | 2SC1474-4 SI-N 20V 2A 0.75W 80MHz2SC1501 SI-N 300V 0.1A 10W 55MHz | 2SC1505 SI-N 300V 0.2A 15W2SC1507 SI-N 300V 0.2A 15W 80MHz | 2SC1509 SI-N 80V 0.5A 1W 120MHz2SC1515 SI-N 200V 0.05A 0.2W 110MHz | 2SC1520 SI-N 300V 0.2A 12,5W2SC1545 N-DARL 40V 0.3A 0.3W B=1K | 2SC1567 SI-N 100V 0.5A 5W 120MHz2SC1570 SI-N 55V 0.1A 0.2W 100MHz | 2SC1571 SI-N 40V 0.1A 0.2W 100MHz2SC1573 SI-N 200V 0.1A 1W 80MHz | 2SC1577 SI-N 500V 8A 80W 7MHz2SC1583 SI-N 50V 0.1A 0.4W 100MHz | 2SC1619 SI-N 100V 6A 50W 10MHz2SC1623 SI-N 60V 0.1A 0.2W 250MHz | 2SC1624 SI-N 120V 1A 15W 30MHz2SC1627 SI-N 80V 0.4A 0.8W 100MHz | 2SC1674 SI-N 30V .02A 600MC RF/IF2SC1675 SI-N 50V .03A 0.25W | 2SC1678 SI-N 65V 3A 3W2SC1685 SI-N 60V 0.1A 150MC UNI | 2SC1688 SI-N 50V 30mA 0.4W 550MHz2SC1708A SI-N 120V 50mA 0.2W 150MHz | 2SC1729 SI-N 35V 3.5A 16W 500MHz 2SC1730 SI-N 30V 0.05A 1.1GHz UHF | 2SC1740 SI-N 40V 100mA 0.3W2SC1741 SI-N 40V 0.5A 0.3W 250MHz | 2SC1756 SI-N 300V 0.2A >50MHz2SC1760 SI-N 100V 1A 7.9W 80MHz | 2SC1775A SI-N 120V 0.05A 0.2W UNI2SC1781 SI-N 50V 0.5A 0.35W | 2SC1815 SI-N 50V 0.15A 0.4W 80MHz2SC1815BL SI-N 60V 0.15A 0.4W B>350 | 2SC1815GR SI-N 60V 0.15A 0.4W B>200 2SC1815Y SI-N 60V 0.15A 0.4W B>120 | 2SC1827 SI-N 100V 4A 30W 10MHz2SC1832 N-DARL 500V 15A 150W B>10 | 2SC1841 SI-N 120V 0.05A 0.5W2SC1844 SI-N 60V 0.1A 0.5W 100MHz | 2SC1845 SI-N 120V 0.05A 0.5W2SC1846 SI-N 120V 0.05A 0.5W | 2SC1847 SI-N 50V 1.5A 1.2W2SC1855 SI-N 20V 20mA 0.25W 550MHz | 2SC1871 SI-N 450V 15A 150W <1/3us2SC1879 N-DARL+D 120V 2A 0.8W B>1 | 2SC1890 SI-N 90V 0.05A 0.3W 200MHz 2SC1895 SI-N 1500V 6A 50W 2MHz | 2SC1906 SI-N 19V 0.05A 0.3W2SC1907 SI-N 30V 0.05A 1100MHz | 2SC1913 SI-N 150V 1A 15W 120MHz2SC1914 SI-N 90V 50mA 0.2W 150MHz | 2SC1921 SI-N 250V 0.05A 0.6W2SC1922 SI-N 1500V 2.5A 50W | 2SC1923 SI-N 30V 20mA 10mW 550MHz2SC1929 SI-N 300V 0.4A 25W 80MHz | 2SC1941 SI-N 160V 50mA 0.8W2SC1944 SI-N 80V 6A PQ=16W | 2SC1945 SI-N 80V 6A 20W2SC1946A SI-N 35V 7A 50W | 2SC1947 SI-N 35V 1A 4W/175MHz2SC1953 SI-N 150V 0.05A 1.2W 70MHz | 2SC1957 SI-N 40V 1A 1.8W/27MHz2SC1959 SI-N 30V 0.5A 0.5W 200MHz | 2SC1967 SI-N 35V 2A 8W 470MHz2SC1968 SI-N 35V 5A 3W 470MHz | 2SC1969 SI-N 60V 6A 20W2SC1970 SI-N 40V 0.6A 5W | 2SC1971 SI-N 35V 2A 12.5W2SC1972 SI-N 35V 3.5A 25W | 2SC1975 SI-N 120V 2A 3.8W 50MHz2SC1980 SI-N 120V 20mA 0.25W 200MHz | 2SC1984 SI-N 100V 3A 30W B=7002SC1985 SI-N 80V 6A 40W 10MHz | 2SC2023 SI-N 300V 2A 40W 10MHz2SC2026 SI-N 30V 0.05A 0.25W | 2SC2027 SI-N 1500/800V 5A 50W2SC2036 SI-N 80V 1A PQ=1..4W | 2SC2053 SI-N 40V 0.3A 0.6W 500MHz2SC2055 SI-N 18V 0,3A 0,5W | 2SC2058 SI-N 40V 0.05A 0.25W2SC2060 SI-N 40V 0.7A 0.75W 150MHz | 2SC2061 SI-N 80V 1A 0.75W 120MHz2SC2068 SI-N 300V 0.05A 95MHz | 2SC2073 SI-N 150V 1.5A 25W 4MHz2SC2078 SI-N 80V 3A 10W 150MHz | 2SC2086 SI-N 75V 1A 0.45W/27MHz2SC2092 SI-N 75V 3A 5W 27MHz | 2SC2094 SI-N 40V 3.5A PQ>15W 175MHz 2SC2097 SI-N 50V 15A PQ=85W | 2SC2120 SI-N 30V 0.8A 0.6W 120MHz2SC2122 SI-N 800V 10A 50W | 2SC2166 SI-N 75V 4A 12.5W RFPOWER2SC2168 SI-N 200V 2A 30W 10MHz | 2SC2200 SI-N 500V 7A 40W 1US2SC2209 SI-N 50V 1.5A 10W 150MHz | 2SC2216 SI-N 45V 50mA 0.3W 300MHz2SC2243日本富士通公司Si-NPN 450V 5A<1MHZ 或者未知工作频率BU326 BU526 BU626ABUW71 BUX44 BUX45 TIP57A TIP58A 3DK308B2SC2244日本富士通公司Si-NPN450V8A<1MHZ 或者未知工作频率BU526 BU626A BUW72 BUX15 BUX44 TIP57A TIP58A 3DK308B2SC2245日本富士通公司Si-NPN450V10A<1MHZ 或者未知工作频率BU526 BU626A BUW24 BUX25 BUW26 BUW34 BUW35 BUW36 BUW72 3DK308B BU415 BU626A BUV25 BUW44 BUX25 2SD396 2SD641 3DK308B BUT56(A)BUX64 MJE53T2SC1865 2SC22002SC2248日本富士通公司Si-NPN450V8A<1MHZ或者未知工作频率BUT56(A)BUX64BUY65MJE130063DK306B 2SC2249日本富士通公司Si-NPN250V30A<1MHZ或者未知工作频率2SC13012SC18732SC22042SC22202SC24422SC24452SD6433DK210E 2SC225日本富士通公司Si-NPN80V1A150MHZBD139BD169BD179BD237BD4412SC1253DK30C2SC2250日本富士通公司Si-NPN450V30A<1MHZ或者未知工作频率2SC13002SC14702SC18742SC22042SC22202SC24423DK210F 2SC2251日本富士通公司Si-NPN45V0.5A900MHZBLX973DA392SC2253日本富士通公司Si-NPN45V2A900MHZ3DA23B2SC2254日本富士通公司Si-NPN45V4A900MHZ3DA100B 2SC2255日本富士通公司Si-NPN45V6A900MHZ2SC20443DA6B2SC2256日本三肯公司Si-NPN200V15A10MHZBDW16BUX11BUX412SC2019 2SD552 2SD583 3DK209D2SC2257未知生产厂家Si-NPN180V0.05A80MHZBF415BF458BF459BF469BF4712SC2257A日本松下公司Si-NPN220V0.05A80MHZBF415BF458BF459BF469BF4713DA87CBF415BF417BF458BF459BF460BF469BF7572SC34173DA87C3DA151DBF417BF459BF8502SC34172SC34182SC2228 SI-N 160V 0.05A 0.75W >50 | 2SC2229 SI-N 200V 50mA 0.8W 120MHz2SC2230 SI-N 200V 0.1A 0.8W 50MHz | 2SC2233 SI-N 200V 4A 40W 8MHz2SC2235 SI-N 120V 0.8A 0.9W 120MHz | 2SC2236 SI-N 30V 1.5A 0.9W 120MHz2SC2237 SI-N 35V 2A PQ>7.5W 175MHz | 2SC2238 SI-N 160V 1.5A 25W 100MHz2SC2240 SI-N 120V 50mA .3W 100MHz | 2SC2261 SI-N 180V 8A 80W 15MHz2SC2267 SI-N 400/360V 0.1A 0.4W | 2SC2270 SI-N 50V 5A 10W 100MHz2SC2271 SI-N 300V 0.1A 0.9W 50MHz | 2SC2275 SI-N 120V 1.5A 25W 200MHz2SC2283 SI-N 38V 0.75A 2.8W(500MHz | 2SC2287 SI-N 38V 1.5A 7.1W 175MHz2SC2295 SI-N 30V 0.03A 0.2W 250MHz | 2SC2307 SI-N 500V 12A 100W 18MHz2SC2308 SI-N 55V 0.1A 0.2W 230MHz | 2SC2310 SI-N 55V 0.1A 0.2W 230MHz2SC2312 SI-N 60V 6A 18.5W/27MHz | 2SC2314 SI-N 45V 1A 5W2SC2320 SI-N 50V 0,2A 0,3W | 2SC2329 SI-N 38V 0.75A 2W 175MHz2SC2331 SI-N 150V 2A 15W POWER | 2SC2333 SI-N 500/400V 2A 40W2SC2334 SI-N 150V 7A 40W POWER | 2SC2335 SI-N 500V 7A 40W POWER2SC2336B SI-N 250V 1.5A 25W 95MHz | 2SC2344 SI-N 180V 1.5A 25W 120MHz2SC2347 SI-N 15V 50mA 250mW 650MHz | 2SC2362 SI-N 120V 50mA 0.4W 130MHz 2SC2363 SI-N 120V 50mA 0.5W 130MHz | 2SC2365 SI-N 600V 6A 50W POWER2SC2369 SI-N 25V 70mA 0.25W 4.5GHz | 2SC2383 SI-N 160V 1A 0.9W 100MHz2SC2389 SI-N 120V 50mA 0.3W 140MHz | 2SC2407 SI-N 35V 0.15A 0.16W 500MHz 2SC2412 SI-N 50V 0.1A 180MHz | 2SC2433 SI-N 120V 30A 150W 80MHz2SC2440 SI-N 450V 5A 40W | 2SC2458 SI-N 50V 0.15A 0.2W 80MHz2SC2466 SI-N 30V 0.05A 2.2GHz | 2SC2482 SI-N 300V 0.1A 0.9W 50MHz2SC2485 SI-N 100V 6A 70W 15MHz | 2SC2486 SI-N 120V 7A 80W 15MHz2SC2491 SI-N 100V 6A 40W 15MHz | 2SC2497 SI-N 70V 1.5A 5W 150MHz2SC2498 SI-N 30V 0.05A 0.3W 3.5GHz | 2SC2508 SI-N 40V 6A 50W 175MHz2SC2510 SI-N 55V 20A 250W(28MHz) | 2SC2512 SI-N 30V 50mA 900MHz TUNE2SC2516 SI-N 150V 5A 30W <0.5/2us | 2SC2517 SI-N 150V 5A 30W <0.5/2us2SC2538 SI-N 40V 0.4A 0.7W | 2SC2539 SI-N 35V 4A 17W 175MHz2SC2542 SI-N 450V 5A 40W | 2SC2547 SI-N 120V 0.1A 0.4W2SC2551 SI-N 300V 0.1A 0.4W 80MHz | 2SC2552 SI-N 500V 2A 20W2SC2553 SI-N 500V 5A 40W 1us | 2SC2562 SI-N 60V 5A 25W 0.1us2SC2563 SI-N 120V 8A 80W 90MHz | 2SC2570A SI-N 25V 70mA 0.6W2SC2579 SI-N 160V 8A 80W 20MHz | 2SC2581 SI-N 200V 10A 100W2SC2590 SI-N 120V 0.5A 5W 250MHz | 2SC2592 SI-N 180V 1A 20W 250MHz2SC2603 SI-N 50V 0.2A 0.3W | 2SC2610 SI-N 300V 0.1A 0.8W 80MHz2SC2611 SI-N 300V 0.1A 0.8W 80MHz | 2SC2621E SI-N 300V 0.2A 10W >50MHz2SC2625 SI-N 450V 10A 80W | 2SC2630 SI-N 35V 14A 100W2SC2631 SI-N 150V 50mA 0,75W 160MHz | 2SC2632 SI-N 150V 50mA 1W 160MHz 2SC2634 SI-N 60V 0.1A 0.4W 200MHz | 2SC2653 SI-N 350V 0.2A 15W >50MHz2SC2654 SI-N 40V 7A 40W | 2SC2655 SI-N 50V 2A 0.9W 0.1us2SC2656 SI-N 450V 7A 80W <1.5/4.5 | 2SC2660 SI-N 200V 2A 30W 30MHz2SC2668 SI-N 30V 20mA 0.1W 550MHz | 2SC2671 SI-N 15V 80mA 0.6W 5.5GHz2SC2682 SI-N 180V 0.1A 8W 180MHz | 2SC2690 SI-N 120V 1.2A 20W 160MHz2SC2694 SI-N 35V 20A 140W | 2SC2705 SI-N 150V 50mA 0.8W 200MHz2SC2706 SI-N 140V 10A 100W 90MHz | 2SC2712 SI-N 50V 0.15A 0.15W 80MHz2SC2714 SI-N 30V 20mA 0.1W 550MHz | 2SC2717 SI-N 30V 50mA 0.3W 300MHz2SC2724 SI-N 30V 30mA 200MHz | 2SC2749 SI-N 500V 10A 100W 50MHz2SC2750 SI-N 150V 15A 100W POWER | 2SC2751 SI-N 500V 15A 120W 50MHz2SC2752 SI-N 500V 0.5A 10W <1/3.5 | 2SC2753 SI-N 17V 0.07A 0.3W 5GHz2SC2759 SI-N 30V 50mA 0.2W 2.3GHz | 2SC2786 SI-N 20V 20mA 600MHz2SC2792 SI-N 850V 2A 80W | 2SC2793 SI-N 900V 5A 100W2SC2802 SI-N 300V 0.2A 10W 80MHz | 2SC2808 SI-N 100V 50mA 0.5W 140MHz2SC2810 SI-N 500V 7A 50W 18MHz | 2SC2812 SI-N 55V 0.15A 0.2W 100MHz2SC2814 SI-N 30V 0.03A 320MHz F | 2SC2825 SI-N 80V 6A 70W B>5002SC2837 SI-N 150V 10A 100W 70MHz | 2SC2839 SI-N 20V 30mA 0.15W 320MHz 2SC2851 SI-N 36V 0.3A 1W 1.5GHz | 2SC2873 SI-N 50V 2A 0.5W 120MHz2SC2878 SI-N 20V 0.3A 0.4W 30MHz | 2SC2879 SI-N 45V 25A PEP=100W 28MHz 2SC2882 SI-N 90V 0.4A 0.5W 100MHz | 2SC288A SI-N 35V 20mA 0.15W2SC2898 SI-N 500V 8A 50W | 2SC2901 SI-N 40V 0.2A 0.6W <12/182SC2908 SI-N 200V 5A 50W 50MHz | 2SC2910 SI-N 160V 70mA 0.9W 150MHz2SC2911 SI-N 180V 140mA 10W 150MHz | 2SC2912 SI-N 200V 140mA 10W 150MHz 2SC2922 SI-N 180V 17A 200W 50MHz | 2SC2923 SI-N 300V 0.1A 140MHz2SC2928 SI-N 1500V 5A 50W | 2SC2939 SI-N 500V 10A 100W 2.5us2SC2958 SI-N 160V 0.5A 1W | 2SC2979 SI-N 800V 3A 40W2SC2987 SI-N 140V 12A 120W 60MHz | 2SC2988 SI-N 36V 0.5A 175MHz2SC2999 SI-N 20V 30mA 750MHz | 2SC3001 SI-N 20V 3A PQ=7W(175MHz)2SC3019 SI-N 35V 0.4A 0.6W 520MHz | 2SC3020 SI-N 35V 1A 10W2SC3022 SI-N 35V 7A 50W | 2SC3026 SI-N 1700V 5A 50W POWER2SC3030 N-DARL 900V 7A 80W | 2SC3039 SI-N 500V 7A 52W2SC3042 SI-N 500/400V 12A 100W | 2SC3052F SI-N 50V 0.2A 0.15W 200MHz2SC3063 SI-N 300V 0.1A 1.2W 140MHz | 2SC3067 2xSI-N 130V 50mA 0.5W 1602SC3068 SI-N 30V 0.3A Ueb=15V B>8 | 2SC3071 SI-N 120V 0.2A Ueb=15V B>2SC3073 SI-N 30V 3A 15W 100MHz | 2SC3074 SI-N 60V 5A 20W 120MHz2SC3075 SI-N 500V 0.8A 10W 1/1.5us | 2SC3089 SI-N 800V 7A 80W2SC3101 SI-N 250V 30A 200W 25MHz | 2SC3102 SI-N 35V 18A 170W 520MHz2SC3112 SI-N 50V 0.15A 0.4W 100MHz | 2SC3116 SI-N 180V 0.7A 10W 120MHz2SC3117 SI-N 180V 1.5A 10W 120MHz | 2SC3133 SI-N 60V 6A 1.5W 27MHz2SC3148 SI-N 900V 3A 40W 1us | 2SC3150 SI-N 900V 3A 50W 15MHz2SC3153 SI-N 900V 6A 100W | 2SC3157 SI-N 150V 10A 60W2SC3158 SI-N 500V 7A 60W | 2SC3164 SI-N 500V 10A 100W2SC3169 SI-N 500V 2A 25W >8MHz | 2SC3175 SI-N 400V 7A 50W 40MHz2SC3178 SI-N 1200V 2A 60W | 2SC3179 SI-N 60V 4A 30W 15MHz2SC3180N SI-N 80V 6A 60W 30MHz | 2SC3181N SI-N 120V 8A 80W 30MHz2SC3182N SI-N 140V 10A 100W 30MHz | 2SC3195 SI-N 30V 20mA 0.1W 550MHz 2SC3199 SI-N 60V 0.15A 0.2W 130MHz | 2SC3200 SI-N 120V 0.1A 0.3W 100MHz2SC3202 SI-N 35V 0.5A 0.5W 300MHz | 2SC3203 SI-N 35V 0.8A 0.6W 120MHz2SC3205 SI-N 30V 2A 1W 120MHz | 2SC3206 SI-N 150V 0.5A 0.8W 120MHz2SC3210 SI-N 500V 10A 100W 1us | 2SC3211 SI-N 800V 5A 70W >3MHz2SC3212 SI-N 800V 7A 3W 3.5MHz | 2SC3225 SI-N 40V 2A 0.9W 1us2SC3231 SI-N 200V 4A 40W 8MHz | 2SC3240 SI-N 50V 25A 110W 30MHz2SC3242 SI-N 20V 2A 0.9W 80MHz | 2SC3244E SI-N 100V 0.5A 0.9W 130MHz2SC3245A SI-N 150V 0.1A 0.9W 200MHz | 2SC3246 SI-N 30V 1.5A 0.9W 130MHz2SC3247 SI-N 50V 1A .9W 130MHz B> | 2SC3257 SI-N 250V 10A 40W 1/3.5us2SC3258 SI-N 100V 5A 30W 120MHz | 2SC3260 N-DARL 800V 3A 50W B>10。
2SK3078A资料
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type2SK3078AVHF/UHF Band Amplifier Applications· Output power: P o ≥ 28.0dBmW · Gain: G p ≥ 8.0dB· Drain Efficiency: ηD ≥ 50%Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitDrain-source voltage V DSS10 VGate-source voltage V GSS 5 V Drain current I D 0.5 A Power dissipation P D (Note 1)3WChannel temperature T ch 150 °C Storage temperature rangeT stg−45~150 °CNote 1: Tc = 25°CMarkingElectrical Characteristics (Ta = 25°C)Characteristics Symbol Test Condition Min Typ. Max UnitOutput power P O 28.0 ¾ ¾ dBmW Drain efficiency ηD 50 ¾ ¾ % Power gain G p V DS = 4.5 V, Iidle = 50 mA(V GS = adjust)f = 470 MHz, P i = 20dBmWZ G = Z L == 50 Ω 8.0 ¾ ¾ dB Threshold voltage V th V DS = 4.8 V, I D = 0.5 mA 0.20 ¾ 1.20VDrain cut-off current I DSS V DS = 10 V, V GS = 0 V ¾ ¾ 10 µA Gate-source leakage currentI GSSV GS = 5 V, V DS = 0 V¾¾ 5 µALoad mismatch (Note 2)¾V DS = 6.5 V, f = 470 MHz, P i = 20dBmW,P o = 28.0dBmW (V GS = adjust) VSWR LOAD 10:1 all phaseNo degradation ¾Caution: This transistor is the electrostatic sensitive device. Please handle with caution. Note 2: When the RF output power test fixture is usedUnit: mmJEDEC―JEITA SC-62 TOSHIBA 2-5K1DU WPF Output Power Test FixtureGS DSL1: f 0.6, 5.5ID, 5T L2: f 0.6, 5.5ID, 7TLine: 2 mmP i – P o , G p , EffIidle – G p , EffP i – P oP i – IddVdd – G p , EffP i – P oP i (dBmW)Iidle (mA)P i (dBmW)P i (dBmW)Vdd (V)P i (dBmW)G p (d B m W )P o (d B m W )D r a i n c u r r e n t (m A )P o (d B m W )E f f (%) P o (d B m W )G p (d B )E f f (%)10050Idd (%)255 15 20 10 03020100 302010 082 46Eff3020Vdd Vdd Vdd VddCaution: These are typical curves and devices are not necessarily guaranteed at these curves.P i – IddP i (dBmW)I d d (m A )301020· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice.000707EAARESTRICTIONS ON PRODUCT USE。
常用三极管参数大全
玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理。
2SK系列场管参数
1mA 大管
10mA 80mW通用型场效应管
10A 100W
15A 120W
20A 130W
10mA 200mW
5A
150W
5A
150W
10mA 200mW
20A 150W
20A 150W
15A 150W
0.5- 0.25W场效应音频/高频放
1.5mA 大管
1-3mA
0.25W场效应音频/高频放 大管
拆N沟 600V 6A
600V 6A
45W
1000V 4A
100W
30V 10mA 1000V 8A 50V 25A 100V 40A 60V 40A 60V 45A 50V 10mA 50V 3-9mA
200mW 150W 45W 100W 100W 125W 250mW 0.25W
2SK112-RN沟
10mA 150mW低频放大场效应管
0.51.5mA
0.3W场效应音频(低频)管
1-3mA 0.3W场效应音频(低频)管
2-6mA 0.3W场效应音频(低频)管
4-12mA 0.3W场效应音频(低频)管
300mW
低频放
大场效
应管
50mA 150mW低频放大场效应管
2.75.5mA
0.25W
3A
45W
500V 15A 100W
450V 20A 147/290ns
拆N沟 50V 10mA
500V 20A 120W
800V 4A
80W
900V 3.5A 80W
2SK1173N沟 2SK1177N沟
50V 500V
2SK1178N沟 500V
2SK1179N沟 500V 2SK117-BLN沟 50V 2SK117-GRN沟 50V 2SK117N沟 50V 2SK117-ON沟 50V
K.2系列产品用户手册说明书
K.2 Series®User ManualK8.2 – 105° 2000 W active 8” (200 mm) 2-way loudspeaker systemK10.2 – 90° 2000 W active 10” (250 mm) 2-way loudspeaker systemK12.2 – 75° 2000 W active 12” (300 mm) 2-way loudspeaker systemTD-000523-01-E*TD-000523-01*EXPLANATION OF SYMBOLSThe term “WARNING!” indicates instructions regarding personal safety. If the instructions are not followed the result may be bodily injury or death.The term “CAUTION!” indicates instructions regarding possible damage to physical equipment. If these instructions are not followed, it may result in damage to the equipment that may not be covered under the warranty.The term “IMPORTANT!” indicates instructions or information that are vital to the successful completion of the procedure. The term “NOTE” is used to indicate additional useful information.NOTE: The intent of the lightning flash with arrowhead symbol in a triangle is to alert the user to the presence of un-insulated “dangerous” voltage within the product’s enclosure that may be of sufficient magnitude toconstitute a risk of electric shock to humans.NOTE: The intent of the exclamation point within an equilateral triangle is to alert the user to the presence of important safety, and operating and maintenance instructions in this manual.IMPORTANT SAFETY INSTRUCTIONSWARNING!: TO PREVENT FIRE OR ELECTRIC SHOCK, DO NOT EXPOSE THIS EQUIPMENT TO RAIN OR MOISTURE. DO NOT USE THIS APPARATUS NEAR WATER.1. Read these instructions.2. Keep these instructions.3. Heed all warnings.4. Follow all instructions.5. Do not use this apparatus near water.6. Clean only with a dry cloth.7. Do not block any ventilation opening. Install in accordance with the manufacturer’s instructions.8. Do not install near any heat sources such as radiators, heat registers, stoves, or other apparatus (including amplifiers)that produce heat.9. Do not defeat the safety purpose of the polarized or grounding-type plug. A polarized plug has two blades with onewider than the other. A grounding type plug has two blades and a third grounding prong. The wide blade or the third prong are provided for your safety. If the provided plug does not fit into your outlet, consult an electrician for replacement of the obsolete outlet.10. Protect the power cord from being walked on or pinched particularly at plugs, convenience receptacles, and the pointwhere they exit from the apparatus.11. Only use attachments/accessories specified by the manufacturer.12. Unplug this apparatus during lightning storms or when unused for long periods of time.13. Refer all servicing to qualified service personnel. Servicing is required when the apparatus has been damaged in anyway, such as power-supply cord or plug is damaged, liquid has been spilled or objects have fallen into the apparatus, the apparatus has been exposed to rain or moisture, does not operate normally, or has been dropped.14. The appliance coupler, or the AC Mains plug, is the AC mains disconnect device and shall remain readily operableafter installation.15. Adhere to all applicable, local codes.16. To prevent electrical shock, the power cord shall be connected to a mains socket outlet with a protective earthing connection.17. Consult a licensed, professional engineer when any doubt or questions arise regarding a physical equipment installation.18. Do not use any aerosol spray, cleaner, disinfectant or fumigant on, near or into the apparatus. Clean only with a dry cloth.19. Do not unplug the unit by pulling on the cord, use the plug.20. Do not submerge the apparatus in water or liquids.21. Keep ventilation opening free of dust or other matter.WarrantyFor a copy of the QSC Limited Warranty, visit the QSC website at Maintenance and RepairWARNING!: Advanced technology, e.g., the use of modern materials and powerful electronics, requires speciallyadapted maintenance and repair methods. To avoid a danger of subsequent damage to the apparatus, injuries to personsand/or the creation of additional safety hazards, all maintenance or repair work on the apparatus should be performed only by a QSC authorized service station or an authorized QSC International Distributor. QSC is not responsible for any injury,harm or related damages arising from any failure of the customer, owner or user of the apparatus to facilitate those repairs. Life Cycle: 10 years, Storage Temperature range: -20C to +70C, Relative Humidity range: 5 - 85% RHFCC StatementNOTE: This equipment has been tested and found to comply with the limits for a Class B digital device,pursuant to Part 15 of the FCC Rules.These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipment generates, uses and can radiate radio frequency energy and, if not installed and used in accordance with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which can be determined by turning the equipment off and on, the user is encouraged to try to correct the interference by one or more of the following measures:• Reorient or relocate the receiving antenna.• Increase the separation between the equipment and receiver.• Connect the equipment into an outlet on a circuit different from that to which the receiver is connected.• Consult the dealer or an experienced radio/TV technician for help.RoHS StatementsThese products are in compliance with European Directive 2011/65/EU – Restriction of Hazardous Substances (RoHS). These products are in compliance with “China RoHS” directives per GB/T26572. The following table is provided for product use in China and its territories:These products 这些产品部件名称(Part Name)有害物质(Hazardous Substances)铅(Pb)汞(Hg)镉(Cd)六价铬(Cr(vi))多溴联苯(PBB)多溴二苯醚(PBDE)电路板组件(PCB Assemblies)X O O O O O机壳装配件(Chassis Assemblies)X O O O O O本表格依据 SJ/T 11364 的规定编制。
2SK2380资料
3
(0.44) 0.88+0.05 – 0.03
I Features
0.12+0.05 – 0.02
1 2
3°
Unit µA nA V V mS pF pF pF
Silicon Junction FETs (Small Signal)
PD Ta
150 240 Ta=25˚C 125 200 200 VGS=0.4V
unit: mm
M Di ain sc te on na tin nc ue e/ d
1.60±0.05 (0.80)
(0.44)
(0.51)
0.28±0.05 (0.51)
(0.80) (0.80) 1.60+0.05 – 0.03
0.60+0.05 – 0.03
I Absolute Maximum Ratings (Ta = 25°C)
Silicon Junction FETs (Small Signal)
2SK2380
Silicon N-Channel Junction FET
For impedance conversion in low frequency For infrared sensor
0.28±0.05
0.80±0.05
Parameter Symbol Gate to Drain voltage VGDO VGSO ID IG
3°
Ratings −40 −40 ±1 10
Unit V V
Gate to Source voltage Drain current Gate current
mA
Allowable power dissipation Channel temperature Storage temperature
三极管 场效应管 快恢复二极管 肖特基二极管等查询
2SA1295 2SC3264 2SA1302 2SC3281
场效应管
2SK1400 2SK1913 2SK1627 2SK2028
三极管
2SA1494 2SC3858 2SA1265 2SC3182
场效应管
2SK1402 2SK1924 2SK1637 2SK2043
三极管
22A1492 2SC3856 2SB688 2SD718
场效应管
FS10SM-16 FS10SM-12 FS20SM-10 FS20SM-12
三极管
2SA1396 2SA1261 2SA1012 2SA1451
场效应管
FS14SM-16 FS14SM-18 FS10SM-18 FS10SM-10
三极管
2SB434 2SB435 2SB1016 2SB1019
场效应管
MTH8N60 FQA10N80 59N20 59N25
三极管
2SB546 2SB556 2SB1094 2SB1051
场效应管
SSH6N80 SSH11N80 SSH7N90 SSH8N90
三极管
2SB553 2SB601 2SB1095 2SB1185
场效应管
SSH5N90 SSH6N90 SSH9N90 SSH11N90
三极管
2SC4596 2SC4024 2SC5130 2SC2336
场效应管
2SK1358,2SK1649 2SK2847 2SK2843
三极管
2SC4153 2SC4054 2SC5706 2SC5707
场效应管
2SK1512,2SK1049 2SK724 2SK725
三极管
2SC3851 2SC3852 2SC4020 2SC4024
三极管 场效应管 快恢复二极管 肖特基二极管等查询
2SK399 2SJ113
三极管
2SD1237 2SD1499 2SD1437 2SD1985
场效应管
2SK320 2SK762 2SK894 2SK1101
三极管
2SD1271 2SD1274 2SD1442 2SD1990
场效应管
2SK420 2SK775 2SK903 2SK1117
三极管
2SD1308 2SD1309 2SD1390 2SD1088
场效应管
2SK513 2SK786 2SK904 2SK1118
三极管
2SD1415 2SD1416 2SD1585 2SD2061
场效应管
2SK530 2SK791 2SK949 2SK1119
三极管
2SD1832 2SD1833 2SD1474 ST26A
场效应管
2SK2077,2SK2078 2SK1294 2SK2194
三极管
2SC3568 2SC3540 2SC4073 2SC4907
场效应管
2SK789,2SK790 2SK1011 2SK2995
三极管
2SC4062 2SC4063 2SC4106 2SC5027
场效应管
2SK793,2SK794 2SK2837 2SK2057
场效应管
W9NB90 W9NK90Z W12NK90Z W12N60
三极管
2SB940 2SB945 2SB566 2SB1225
场效应管
W26N60 W16N60 W12N60 W16N50
三极管
2SB941 2SB942 2SB1186 2SB753
场效应管
24N60C3 20N60C3 20N60S5 47N60C3
2S系列晶体管资料速查
2SC2166三菱μA)001002SC2640东芝0022SC2941日电μA)000.52SC3147东芝10002SC3629三菱μA)002002SC4013罗姆μA)000.52SC4253东芝μA)000.12SC4526三菱0032SC4856三洋μA)0012SC5006日电μA)0012SC941TM东芝μA)000.1Vebo(V)00Vce=10V, Ic=ft(MHz)Vebo(V)00Vce=10V, Ic=ft(MHz) Veb=4V, Ic=0Vcb=25V, Ie=Vebo(V)00.5Veb=3V, Ic=0hfeVeb=10V, Ie=Vebo(V)0300Vce=5V, Ic=1hfe比*Vebo(V)80200Vce=10V, Ic=hfe比* Veb=2V, Ic=0ft(MHz) Vcb=-10V, Ie Vebo(V)0500Vce=-10V, Ic=Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vce=10V, Ic=Vebo(V)5500Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)5500Vce=10V, Ic=Cre(pF) Vcb=-12V Vebo(V)250560Vce=-2V, Ic=ft(MHz) Vce=10V, Ic=Vebo(V)10Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 1.10Vce=10V, Ic=Cob(pF) Vce=6V, Ic=1Vebo(V)5500Vce=6V, Ic=1Cre(pF) Veb=2V, Ic=0Vebo(V)0300Vce=5V, Ic=1hfe比*Vebo(V)0300Vce=5V, Ic=1hfe比* Veb=2V, Ic=0Veb=2V, Ic=0Vebo(V)80200Vce=10V, Ic=hfe比*Vebo(V)80200Vce=10V, Ic=hfe比* Veb=2V, Ic=0Vcb=30V, Ie=Vebo(V)0100Veb=4V, Ic=0hfeVcb=25V, Ie=Vebo(V)01Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)01Veb=3V, Ic=0hfehfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0Vcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfehfeVcb=15V, Ie=Vebo(V)0100Veb=2.5V, Ic=Vcb=15V, Ie=Vebo(V)0200Veb=2V, Ic=0hfeVcb=15V, Ie=Vebo(V)0400Veb=2V, Ic=0hfeVcb=15V, Ie=Vebo(V)0400Veb=2V, Ic=0hfehfeVcb=30V, Ie=Vebo(V)0100Veb=4V, Ic=0Vcb=25V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVce=10V, Ic=Vebo(V) 2.20Vce=10V, Ic=Cob(pF) Vcb=15V, Ie=Vebo(V)020Veb=3V, Ic=0hfehfeVcb=10V, Ie=Vebo(V)030Veb=3V, Ic=0Vcb=10V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeVcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=40V, Ie=Vebo(V)0200Vce=5V, Ic=0ft(MHz) Vcb=35V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)50180Vce=10V, Ic=IMD(dB)hfeVcb=25V, Ie=Vebo(V)04Veb=2V, Ic=0Vce=5V, Ic=5Vebo(V)1000Vce=5V, Ic=0Cob(pF)hfeVcb=25V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeVcb=35V, Ie=Vebo(V)01Veb=3V, Ic=0Vcb=35V, Ie=Vebo(V)02Veb=3V, Ic=0hfeVce=10V, Ic=Vebo(V)30Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cob(pF) Vce=8V, Ic=1Vebo(V)60Vce=8V, Ic=1Cob(pF) Vcb=30V, Ie=Vebo(V)0100Veb=3V, Ic=0hfeft(MHz) Vcb=20V, Ie=Ic(A)60200Vce=7V, Ic=0Cob(pF)hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0Vcb=5V, Ic=1Vebo(V)0500Vcb=12V, Ie=PG(dB) Vcb=10V, Ie=Vebo(V)0220Vcb=10V, Ie=ft(MHz) Vcb=40V, Ie=Vebo(V)0320Vce=5V, Ic=5ft(MHz) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=10V, Ie=Vebo(V)100200Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Vebo(V)00Vce=3V, Ic=8ft(MHz) Vcb=10V, Ic=Vebo(V)6500Vce=10V, Ic=Cre(pF) Vcb=15V, Ie=Vebo(V)00Vce=3V, Ic=2ft(MHz) Vce=10V, Ic=Vebo(V) 4.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)8500Vce=10V, Ie=Cre(pF) Vcb=10V, Ie=Vebo(V) 1.1 1.4Ie=-3mA, f=2Cob(pF) Vce=8V, Ic=2Vebo(V)80Vce=8V, Ic=2Cob(pF) Vce=20V, Ib=Vebo(V)0260Vcb=6V, Ie=-ft(MHz) Vce=5V, Ic=1Vebo(V)2000Vce=5V, Ic=1Cob(pF) Vcb=6V, Ie=-Vebo(V)6500Ie=-1mA, f=1Cre(pF) Vcb=20V, Ie=Vebo(V)00.5Veb=2V, Ic=0hfeVcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz) Vcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vce=10V, Ic=Vebo(V)9000Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)5500Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 2.20Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)9000Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)00Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)00Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)20Vce=10V, Ic=Cob(pF) Vcb=10V, Ie=Vebo(V) 1.2 1.6Ie=-15mA, f=Cre(pF) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)40Vce=10V, Ic=Cob(pF) Vce=5V, Ic=1Vebo(V)450600Vcb=28V, Ie=PG(dB) Vce=10V, Ic=Vebo(V)9000Vce=10V, Ic=Cc．rbb' Vcb=15V, Ie=Vebo(V)0200Veb=3V, Ic=0hfehfeVcb=25V, Ie=Vebo(V)01000Veb=3V, Ic=0hfeVcb=15V, Ie=Vebo(V)02Veb=3V, Ic=0Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=10V, Ie=Vebo(V)0200Vce=10V, Ic=ft(GHz) Veb=1V, Ic=0Vebo(V)150300Vce=8V, Ic=7ft(GHz)Vebo(V)60200Vce=10V, Ic=Cob(pF) Veb=2V, Ie=0Vcb=35V, Ie=Vebo(V)04Veb=3V, Ic=0hfeVce=12V, Ic=Vebo(V)2300Vce=12V, Ic=Cob(pF) Vce=6V, Ic=1Vebo(V)9400Vce=6V, Ic=5Cob(pF)hfeVcb=25V, Ie=Vebo(V)01Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)02Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)03Veb=3V, Ic=0Vcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0hfeVcb=10V, Ie=Vebo(V) 1.2 1.6Ie=-15mA, f=Cre(pF) Vcb=15V, Ie=Vebo(V)00Vcb=5V, Ic=1Cob(pF) Vcb=15V, Ie=Vebo(V)00Vcb=5V, Ic=1Cob(pF)Vcb=15V, Ie=Vebo(V)00Vcb=5V, Ic=5Cob(pF)Vcb=15V, Ie=Vebo(V)00Vce=5V, Ic=1Cob(pF)Vcb=15V, Ie=Vebo(V)00Vce=5V, Ic=3Cob(pF)Vce=5V, Ic=5Vebo(V)40Vce=10V, Ic=Cob(pF)Vcb=10V, Ie=Vebo(V)2300Ie=-1mA, f=2Cre(pF)Vce=5V, Ic=1Vebo(V)3000Vcb=50V, Ie=PG(dB)Vce=6V, Ic=1Vebo(V)5500Vce=6V, Ic=1Cre(pF)Vcb=35V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Vcb=35V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Vce=8V, Ic=4Vebo(V) 5.50Ic=40mA, f=8Cob(pF)Vce=10V, Ic=Vebo(V) 4.50Ie=-20mA, f=Cob(pF)Vcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0hfeVcb=15V, Ie=Vebo(V)03Veb=3V, Ic=0hfeVce=6V, Ic=1Vebo(V)5500Vce=6V, Ic=1Cre(pF)Vcb=35V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Vcb=35V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Vcb=30V, Ie=Vebo(V)0240Vce=12.5V, Icft(MHz)Vcb=30V, Ie=Vebo(V)0300Vce=6V, Ic=1ft(MHz)Vce=4V, Ic=2Vebo(V)00Vce=4V, Ic=2Cre(pF)Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V)10Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V)10Vce=10V, Ic=Cre(pF)Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V) 1.20Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V) 2.20Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cob(pF)Vce=10V, Ic=Vebo(V)8500Ic=10V, Ie=-5Cre(pF)Vce=10V, Ic=Vebo(V) 1.10Vce=10V, Ie=Cob(pF)Vce=10V, Ic=Vebo(V)10Vce=10V,Ie=Cob(pF)Vce=10V, Ic=Vebo(V)20Vce=10V, Ie=Cob(pF)Vcb=20V, Ie=Ic(A)00.1Veb=2V, Ic=0hfeVce=6V, Ic=1Vebo(V)3200Vce=6V, Ic=1Cob(pF)Vcb=10V, Ie=Vebo(V)2300Ie=-1mA, f=2Cre(pF)Vce=5V, Ic=1Vebo(V)0320Vcb=12V, Ie=Vce=5V, Ic=5Vebo(V)110150Vcb=12V, Ie=Vce=6V, Ic=1Vebo(V)6000Vce=6V, Ie=-Cob(pF)Vce=6V, Ic=1Vebo(V)2500Vce=6V, Ie=-Cob(pF)Vcb=25V, Ie=Vebo(V)0200Veb=3V, Ic=0hfehfeVcb=25V, Ie=Vebo(V)0400Veb=3V, Ic=0Vcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfehfeVcb=25V, Ie=Vebo(V)01Veb=3V, Ic=0Vebo(V)150300Vce=8V, Ic=2ft(GHz) Veb=2V, Ic=0Ic(A)60250Vce=10V, Ic=ft(GHz) Veb=2V, Ic=0Vce=6V, Ic=1Vebo(V)3200Vce=6V, Ic=1Cre(pF)Vce=6V, Ic=1Vebo(V)3200Vce=6V, Ic=1Cre(pF)Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF)Vcb=20V, Ie=Vebo(V)50Vce=13.5V, Icft(GHz)Vcb=5V, Ic=1Vebo(V)7000Vcb=12V, Ie=PG(dB)Vcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0hfehfeVcb=15V, Ie=Vebo(V)03Veb=3V, Ic=0Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz)Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz)hfeVcb=15V, Ie=Vebo(V)02Veb=2V, Ic=0hfeVcb=15V, Ie=Vebo(V)03Veb=2V, Ic=0Vcb=15V, Ie=Ic(mA)0200Vce=8V, Ic=1ft(GHz)ft(GHz) Vcb=20V, Ie=Vebo(V)500Vce=13.5V, IcVcb=30V,Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vce=6V, Ic=1Vebo(V)3500Vce=6V, Ic=1Cre(pF) Vce=6V, Ic=1Vebo(V)3500Vce=6V, Ic=1Cre(pF) Vce=6V, Ic=1Vebo(V)7500Vce=6V, Ic=1Cre(pF) Vce=6V, Ic=1Vebo(V)3200Vce=6V, Ic=1Cre(pF)hfeVcb=10V, Ie=Vebo(V)0500Veb=2V, Ic=0Vcb=15V, Ie=Vebo(V)00Vce=5V, Ic=0Cob(pF) Vce=5V, Ic=1Vebo(V) 6.50Vce=5V, Ic=1Cob(pF) Vce=4V, Ic=5Vebo(V) 1.450Vce=4V, Ic=5Cob(pF)hfeVcb=10V, Ie=Vebo(V)0200Veb=2V, Ic=0Vcb=10V, Ie=Vebo(V)0300Veb=2V, Ic=0hfeVcb=15V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=15V, Ie=Vebo(V)0300Veb=3V, Ic=0hfehfeVcb=15V, Ie=Vebo(V)0500Veb=3V, Ic=0Vcb=15V, Ie=Vebo(V)03Veb=3V, Ic=0hfeVcb=25V, Ie=Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=10V, Ie=Vebo(V) 1.1 1.4Ie=-3mA,f=20Cob(pF) Vcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Ic(mA)0200Vce=8V, Ic=5ft(GHz) Vcb=15V, Ie=Ic(mA)0200Vce=8V, Ic=1ft(GHz) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)40Vce=10V, Ic=Cob(pF) Vcb=15V, Ie=Vebo(V)0300Veb=2V, Ic=0hfehfeVcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0hfeVcb=10V, Ie=Vebo(V)0300Veb=2V, Ic=0hfeVcb=10V, Ie=Vebo(V)0500Veb=2V, Ic=0Vcb=15V, Ie=Vebo(V)05Veb=2V, Ic=0hfeVce=10V, Ic=Vebo(V) 4.50Ic=10mA, f=8Cob(pF) Vebo(V) 2.40Vce=10V, Ic=Cre(pF) Vce=10V,Ic=5Vcb=15V, Ie=Vebo(V)150320Vce=3V, Ic=8ft(GHz) Vce=10V, Ic=Vebo(V)6500Vce=10V, Ic=Cre(pF)ft(GHz) Vcb=25V, Ie=Vebo(V)150300Vce=10V,Ic=5Vcb=15V, Ie=Vebo(V)100200Vce=3V,Ic=8mft(GHz) Vcb=30V, Ie=Vebo(V)70200Vce=10V, Ic=ft(MHz) Vce=5V, Ic=2Vebo(V) 4.50Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V) 4.50Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V) 4.50Vce=2V, Ic=2Cob(pF) Vce=4V, Ic=5Vebo(V) 1.9 2.5Ie=-5mA, f=2Cob(pF) Vcb=30V, Ie=Vebo(V)50150Vce=12V, Ic=PG(dB) Vcb=25V, Ie=Vebo(V)150300Vce=10V, Ic=ft(GHz) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vce=6V, Ic=1Vebo(V)7500Vce=6V, Ic=4Cre(pF)Vce=5V, Ic=5Vebo(V)0330Vcb=12V, Ie=hfeVcb=15V, Ie=Vebo(V)05Veb=2V, Ic=0hfeVcb=25V, Ie=Vebo(V)04Veb=2V, Ic=0Vce=10V, Ic=Ic(mA)50Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)50200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)50200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60150Vce=10V, Ic=Cre(pF) Vce=10V, Ie=Vebo(V)2500Ie=-1mA, f=2Cre(pF) Vce=10V, Ic=Vebo(V)3000Ie=-1mA, f=2Cre(pF) Vcb=6V, Ie=-Vebo(V)6500Ie=-1mA, f=2Cre(pF) Vce=5V,Ic=50Vebo(V) 4.40Vce=5V, Ic=5Cob(pF)Vebo(V) 4.50Vce=5V, Ic=2Cob(pF) Vce=5V,Ic=20Vcb=10V, Ie=Vebo(V) 1.2 1.6Ie=-15mA, f=Cre(pF) Vce=10V, Ic=Vebo(V) 6.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 6.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)5500Vce=10V, Ic=Cre(pF)hfeVcb=10V, Ie=Vebo(V)0300Veb=2V, Ic=0Vcb=18V, Ie=Vebo(V)0320Vce=12V,Ic=2ft(MHz) Vce=6V, Ic=1Vebo(V)9400Vce=6V, Ic=5Cob(pF) Vcb=10V, Ie=Vebo(V)0200Veb=2V, Ic=0hfeVcb=20V, Ie=Ic(A)0200Vce=10V, Ic=Cob(pF) Vcb=18V, Ie=Vebo(V)0500Vce=12V, Ic=ft(MHz) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cob(pF) Vce=4V, Ic=2Vebo(V)00Vce=4V, Ic=2Cre(pF) Vce=12V, Ic=Vebo(V)2300Vce=12V, Ic=Cob(pF) Veb=2V, Ic=0Vebo(V)60200Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cob(pF) Vce=5V, Ic=2Vebo(V) 4.50Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V)60Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V)60Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=2Vebo(V)60Vce=5V, Ic=2Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)20Vce=10V, Ie=Cre(pF) Vce=10V, Ic=Vebo(V)20Ic=10V, Ie=-5Cre(pF) Vcb=10V, Ie=Vebo(V)0130Vce=10V, Ic=ft(GHz) Vcb=10V, Ie=Vebo(V)0300Vce=10V, Ic=ft(GHz) Vcb=10V, Ie=Vebo(V)100250Vce=8V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0250Vce=8V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)100250Vce=6V, Ic=1ft(GHz) Vce=6V, Ic=1Vebo(V)100Vce=6V, Ic=1Cre(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cre(pF) Vce=8V, Ic=2Vebo(V)80Vce=8V, Ic=2Cre(pF) Vce=10V, Ic=Vebo(V) 6.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Ic(mA) 6.50Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V)70Vce=10V, Ic=Cob(pF)hfeVcb=25V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=10V, Ie=Vebo(V)0200Veb=2V, Ic=0hfeVce=5V, Ic=5Vebo(V) 1.20Vce=5V, Ic=1Cob(pF) Vcb=30V, Ie=Ic(A)60100Vce=10V, Ic=Cob(pF) Vcb=30V, Ie=Ic(A)60100Vce=10V, Ic=Cob(pF) Vebo(V)40Vce=1V, Ic=1|S21e| * Vce=1V, Ic=2μAVce=8V, Ic=2Vebo(V)60Ic=20mA, f=8Cob(pF) Vce=1V, Ic=1Vebo(V)40Ic=1mA, f=80Cob(pF) Vce=5V, Ic=1Vebo(V) 6.50Vce=5V, Ic=1Cob(pF) Vce=10V, Ic=Vebo(V) 1.20Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 2.20Vce=10V,Ic=5Cre(pF) Vce=10V, Ic=Vebo(V)30Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)30Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 3.50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)0.8 1.1Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V)50Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 2.90Vce=10V, Ic=Cob(pF) Vcb=25V Vebo(V)0270Vce=10V,Ic=4ft(GHz) Vcb=25V Vebo(V)0270Vce=10V, Ic=ft(GHz)hfeVcb=15V, Ie=Vebo(V)05Veb=2V, Ic=0Veb=1V, Ic=0Vebo(V)0250Vce=10V, Ic=hfe比* Vcb=35V,Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz) Veb=1V, Ic=0Vebo(V)100250Vce=8V, Ic=2hfe比* Vcb=30V, Ie=Ic(A)60100Vce=10V, Ic=Cob(pF) Vcb=15V, Ie=Ic(A)60200Vce=7V, Ic=0Cob(pF) Vcb=15V, Ie=Ic(A)60200Vce=7V, Ic=0Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vcb=20V, Ie=Ic(A)60200Vce=10V, Ic=Cob(pF) Vce=10V, Ic=Vebo(V) 1.10Vce=10V, Ic=Crb(pF) Vce=8V, Ic=2Vebo(V)60Ic=20mA, f=8Cob(pF) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vce=12.5V,Ic Vebo(V)00Vce=12.5V, IcCob(pF) Vce=10V, Ic=Vebo(V)40Vce=10V, Ie=Cob(pF) Vcb=30V, Ie=Vebo(V)100200Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 3.80Vce=10V, Ic=Cob(pF) Vce=12.5V, IcVebo(V)00Vce=12.5V,Ic Cob(pF) Vce=8V, Ic=2Vebo(V)8.50Ic=20mA, f=1Cob(pF)hfeVcb=15V, Ie=Vebo(V)05Veb=3V, Ic=0Vce=10V, Ic=Vebo(V)01Vce=10V,Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0220Vcb=10V, Ie=ft(MHz) Vcb=6V, Ie=-Vebo(V)6500Ie=-1mA, f=2Cre(pF) Vcb=10V, Ie=Vebo(V)0 1.6Ie=-15mA, f=Cre(pF) Vcb=10V, Idd Vebo(V) 1.1 1.4Ie=-3mA, f=2Cob(pF)Cob(pF) Vce=10V, Ic=Vebo(V) 4.50Ie=-10mA,f=8Vce=4V, Ic=5Vebo(V) 1.9 2.5Ie=-5mA, f=2Cob(pF) Vce=10V, Ic=Vebo(V)2300Ie=1mA, f=20Cre(pF) Vce=8V, Ic=2Vebo(V)60Ic=20mA, f=8Cob(pF) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz)Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz)ft(MHz) Vcb=24V Vebo(V)0180Vce=6V,Ic=2mVcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0180Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V,Ic=5ft(GHz) Vce=3.4V, Ic=Vebo(V) 1.50Ic=1.8mA, f=8Cob(pF) Vce=10V, Ic=Vebo(V)01Vce=10V, Ic=ft(GHz) Vce=10V, Ic=Vebo(V)01Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vce=10V, Ic=Vebo(V)60Vce=10V, Ic=Cre(pF) Vce=10V, Ic=Vebo(V) 6.50Vce=10V, Ic=Cre(pF) Vce=8V, Ic=2Vebo(V)90Vce=8V, Ic=2Cre(pF) Vce=6V, Ic=1Vebo(V)100Vce=6V, Ic=1Cre(pF) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=25V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vce=5V, Ic=2Vebo(V)60Vce=5V, Ic=2Cob(pF) Vcb=24V Vebo(V)0180Vce=6V, Ic=2ft(MHz) Vcb=15V, Ie=Vebo(V)0500Veb=3V, Ic=0hfeVcb=30V, Ie=Vebo(V)90180Vce=6V, Ic=1ft(MHz) Vcb=50V, Ie=Vebo(V)90180Vce=6V, Ic=1ft(MHz) Vcb=20V, Ie=Vebo(V)0220Vce=3V, Ic=5ft(GHz) Vcb=25V, Ie=Vebo(V)100240Vce=5V, Ic=2ft(GHz) Vcb=25V,Ie=Vebo(V)100200Vce=3V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)100180Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Vebo(V)0200Vce=10V, Ic=ft(GHz)ft(GHz) Veb=1V, Ic=0Vebo(V)100250Vce=1V, Ic=2μA Vce=5V, Ic=5Vebo(V) 2.40Vce=5V, Ic=2Cob(pF) Vce=5V, Ic=5Vebo(V) 3.80Vce=5V, Ic=2Cob(pF) Vce=3V, Ic=1Vebo(V)8500Vce=3V, Ic=1Crb(pF) Vce=6V, Ic=1Vebo(V)5500Vce=6V, Ic=1Cre(pF) Veb=2V, Ic=0ft(GHz) Vebo(V)0200Vce=3V,Ic=20Vebo(V)110250Vce=3V, Ic=7ft(GHz) Veb=1V, Ic=0Vebo(V)0240Vce=3V, Ic=7ft(GHz) Veb=1V, Ic=0Vebo(V)100250Vce=3V, Ic=5ft(GHz) Veb=1V, Ic=0Vce=5V, Ic=2Vebo(V)10Vce=5V, Ic=2Cob(pF) Vce=10V, Ic=Vebo(V) 1.3 1.9Ie=-15mA, f=Cob(pF) Vce=4V, Ic=5Vebo(V)20Ie=-5mA, f=2Cob(pF) Vcb=10V, Ie=Vebo(V)0500Veb=2V, Ic=0hfeVce=3V, Ic=1Vebo(V)8500Vce=3V, Ic=1Crb(pF) Vce=10V, Ic=Vebo(V) 2.40Vce=10V, Ic=Cre(pF) Vcb=10V, Ie=Vebo(V)150320Vce=3V, Ic=8ft(GHz) Vcb=10V, Ie=Vebo(V)0130Vce=10V, Ic=ft(GHz) Vcb=10V, Ie=Vebo(V)0300Vce=10V, Ic=ft(GHz) Vce=10V, Ic=Vebo(V)6500Vce=10V, Ic=Cre(pF) Vcb=25V, Ie=Vebo(V)150300Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Vebo(V)100200Vce=3V, Ic=8ft(GHz) Vcb=20V, Ie=Vebo(V)100250Vce=10V, Ic=ft(GHz)Vcb=30V, Ie=Vebo(V)70200Vce=10V, Ic=ft(MHz)Vcb=25V, Ie=Vebo(V)50180Vce=5V, Ic=6PG(dB)Cob(pF) Vce=5V, Ic=1Vebo(V)3000Ie=-10mA, f=ft2(MHz) Vcb=15V, Ie=Vebo(V)100200Vce=5V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)100200Vce=5V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)100200Vce=5V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)100200Vce=5V, Ic=5ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz)Cob(pF) Vce=12V, Ic=Vebo(V)2300Vce=12V,Ic=2Vce=12V, Ic=Vebo(V)2300Vce=12V, Ic=Cob(pF) Vcb=24V Vebo(V)0270Vce=6V, Ic=1ft(MHz) Vcb=20V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vcb=15V, Ie=Vebo(V)05000Veb=2V, Ic=0hfeVcb=10V, Ie=Vebo(V)0220Vce=10V, Ie=ft(MHz)Ie=10μA, Ic=0Vebo(V)0260Vcb=6V, Ie=-ft(MHz) Vcb=15V, Ie=Vebo(V)0320Vce=10V, Ic=ft(MHz) Vcb=20V Vebo(V)0180Vce=6V, Ic=1ft(MHz) Vce=10V, Ic=Vebo(V)2300Vcb=10V, Ie=Cre(pF) Vcb=10V, Ie=Vebo(V)120250Vce=8V, Ic=1ft(GHz) Vebo(V)0350Vce=10V, Ic=ft(GHz) Vbe=2V, Ic=0Vbe=2V, Ic=0Vebo(V)0200Vce=10V, Ic=ft(GHz) Vcb=12V, Ie=Vebo(V)2500Vce=5V, Ic=5Vce(sat) Vcb=25V, Ie=Vebo(V)0200Vce=5V, Ic=5ft(GHz) Vcb=20V, Ie=Vebo(V)0250Vce=5V, Ic=5ft(GHz) Vcb=10V Vebo(V)0180Vce=10V, Ic=ft(GHz) Vcb=10V Vebo(V)0270Vce=10V, Ic=ft(GHz) Vebo(V)0320Vce=5V, Ic=5Cob(pF) Veb=4V, Ic=0ft(MHz) Vcb=60V, Ie=Vebo(V)0700Vce=6V, Ib=2Vcb=30V Vebo(V)80180Vce=10V, Ic=ft(MHz) Vcb=30V Vebo(V)82180Vce=10V, Ic=ft(MHz) Vcb=10V Vebo(V)0560Vce=5V, Ic=5ft(MHz) Vebo(V)0200Vce=10V, Ic=ft(GHz) Veb=2V, Ic=0Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Veb=1V, Ic=0Vebo(V)120300Vce=8V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)150300Vce=8V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0400Vce=4V, Ic=5ft(GHz) Vcb=80V, Ie=Vebo(V)0200Vce=10V, Ic=ft(GHz) Vebo(V)150300Vce=8V, Ic=2ft(GHz) Veb=2V, Ic=0Vcb=25V, Ie=Vebo(V)50180Vce=5V, Ic=1Vbe=1V, Ic=0Vebo(V)0250Vce=10V, Ic=ft(GHz) Vbe=1V, Ic=0Vebo(V)0250Vce=8V, Ic=2ft(GHz) Vbe=1V, Ic=0Vebo(V)0250Vce=6V, Ic=7ft(GHz)Vebo(V)0250Vce=10V, Ic=ft(GHz) Vbe=1V, Ic=0Vebo(V)0250Vce=8V, Ic=2ft(GHz) Vbe=1V, Ic=0Vbe=1V, Ic=0Vebo(V)0250Vce=6V, Ic=7ft(GHz) Vce=1V, Ic=1Vebo(V)50Vce=1V, Ic=1Cob(pF) Vce=1V, Ic=1Vebo(V)50Vce=1V, Ic=1Cob(pF) Vce=1V, Ic=1Vebo(V)50Vce=1V, Ic=1Cob(pF)ft(GHz)Vcb=10V, Ie=Vebo(V)0270Vce=5V,Ic=20ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V,Ic=5m Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=5ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=4ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=4ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=4ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V,Ic=20ft(GHz)ft(GHz) Vebo(V)0150Vce=5V,Ic=5m Veb=2V, Ic=0Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=20V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=20V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Veb=2V, Ic=0Vebo(V)0200Vce=10V, Ic=Cob(pF) Vcb=40V, Ie=Vebo(V)0200Vce=6V, Ic=1ft(MHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0270Vce=5V, Ic=1ft(GHz) Vebo(V)0175Vce=3V, Ic=5ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=1ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=5ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=1ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=5ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=1ft(GHz) Vcb=5V, Ie=0Vebo(V)250600Vce=5V, Ic=5Cob(pF) Vcb=8V, Rbe∞Vcb=10V, Ie=Vebo(V)250600Vce=5V, Ic=5Cob(pF) Vcb=10V, Ie=Vebo(V)250600Vce=5V, Ic=5Cob(pF) Vcb=10V, Ie=Vebo(V)250600Vce=5V, Ic=5Cob(pF) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V Vebo(V)160270Vce=2V, Ic=5ft(MHz) Vcb=12V Vebo(V)160270Vce=2V, Ic=5ft(MHz) Vcb=15V, Ie=Vebo(V)0120Vce=5V, Ic=5ft(GHz) Vcb=15V, Ie=Vebo(V)0120Vce=5V, Ic=5ft(GHz)Vcb=10V, Ie=Vebo(V)0160Vce=3V, Ic=7ft(GHz)Vebo(V)0175Vce=3V, Ic=5ft(GHz)Vebo(V)0175Vce=3V, Ic=1Cob(pF) Vcb=5V, Ie=0Vcb=10V, Ie=Vebo(V)120250Vce=3V, Ic=7ft(GHz) Vcb=10V, Ie=Vebo(V)100250Vce=8V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)100250Vce=6V, Ic=1ft(GHz) Vebo(V)0175Vce=3V, Ic=5ft(GHz) Vcb=5V, Ie=0Vebo(V)0175Vce=3V, Ic=1Cob(pF) Vcb=5V, Ie=0Vcb=15V, Ie=Vebo(V)120250Vce=5V, Ic=1ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)120250Vce=5V, Ic=2ft(GHz) Vcb=10V, Ie=Vebo(V)0240Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0240Vce=5V, Ic=1ft(GHz) Vcb=10V, Ie=Vebo(V)0240Vce=5V, Ic=1ft(GHz) Vcb=12V, Ie=Vebo(V)90160Vce=5V, Ic=2ft(GHz) Vcb=12V, Ie=Vebo(V)90160Vce=5V, Ic=2ft(GHz) Vce=6V, Ic=1Vebo(V)9400Vce=6V, Ic=5Cob(pF) Vebo(V)4000Vce=10V, Ic=Cob(pF) Vce=0.5V, Ic=Vcb=25V, Ie=Vebo(V)0300Vce=6V, Ic=1ft(MHz) Vcb=15V, Ie=Vebo(V)0100Veb=2.5V, Ic=hfeft(MHz) Vcb=12V, Ie=Vebo(V)0180Vce=6V,Ic=1m Vcb=15V, Ie=Vebo(V)01Veb=3V, Ic=0hfeVce=6V, Ic=1Vebo(V)4700Ie=-1mA, f=1Cob(pF) Vce=10V, Ic=Vebo(V)2300Ic=1mA, f=20Cre(pF)hfeVcb=15V, Ie=Vebo(V)0100Veb=3V, Ic=0Vcb=15V, Ie=Vebo(V)50180Vce=10V, Ic=Vcb=20V, Ie=Vebo(V)0240Vce=12V, Ic=ft(MHz)Pc(mW)200Cre(pF)0 1.2 1503000Ie=1mA, f=2001 1.5Ie=0, f=1MHz Pt(mW)300|S21e| *81000.950Vcb=-5V, Ie=Pc(mW)200Cre(pF)00.750 1.1 1.7Vcb=-6V, f=1Pc(mW)150Cc．rbb'01101 1.5Ie=0, f=1MHz Pt(mW)250|s21e| *8100 2.14Ie=0, f=1MHz Pt(mW)800td(ns)0 3.5 2504000Vce=-10V, Ie Pt(mW)200Cob(pF)0 1.101 1.5Ie=0, f=1MHz Pt(mW)3000000.750Vcb=-5V, Ie=Pc(mW)150Cre(pF)00.6Pc(mW)400Vce(sat)0-0.1 1503000Ie=1mA, f=200 1.1 1.7Vcb=-6V, f=1Pc(mW)150Cc．rbb'011Pc(mW)300Cre(pF)0 1.2 1503000Ie=2mA, f=20Pc(mW)300Cob(pF)00 02000Vce=-12V, Ic=02000Vce=-12V, Ic=Pc(mW)300Cob(pF)00Pt(mW)250Cob(pF)0 1.5 340Vce=-10V, Ic=Pc(W)1Cob(pF)0 2.7 05000Ie=10mA, f=2Pc(mW)150NF(dB)0 2.8 1503000Ie=1mA, f=20Pc(mW)250|S21e| *500 1.53Vce=-10V, Ic=1502300Vce=-6V, Ic=Pc(mW)150Cre(pF)0 1.1 500Vce=-5V, Ic=Pc(W)*1ft(GHz)0 1.5 2004000Vce=-10V, Ie Pc(mW)200Cob(pF)00.85Pc(mW)250Cre(pF)00.75 0.6 1.20Vce=-10V, Ic=Pc(mW)125NF(dB)0 2.8 1503000Vcb=-10V,Ie=2004000Vce=-10V, Ie Pc(mW)150Cob(pF)00.85Pc(W)1Cob(pF)05 2003000Vce=-20V, Ic=0 1.2 1.6Vcb=-10V, f=Pc(mW)250Cre(pF)00.9 2004000Vce=-10V, Ie Pc(mW)*150Cob(pF)00.850 1.2 1.6Vcb=-10V, f=Pc(mW)150Cre(pF)00.9 3006500Vce=-5V, Ie=Pc(mW)150Cob(pF)0 1.2 05500Vce=-1V, Ic=Pc(mW)2000000.9 1.1Ie=0, f=1MHz Pc(mW)250|S21e| *50Pc(mW)400Cre(pF)0 1.2 1503000Ie=1mA, f=201502500Vce=6V, Ie=-Pt(mW)200Cob(pF)0 1.9 0.810Vce=6V, Ie=-Pc(mW)250Cob(pF)00.6 4506500Ie=-1mA, f=2Pc(mW)400PG(dB)200 0.6 1.2 1.6Ie=-15mA, f=Pc(mW)400PG(dB)0200.810Vce=6V, Ie=-Pt(mW)250Cob(pF)00.61.520Vce=6V, Ie=-Pc(mW)250Cob(pF)00.50 1.1 1.5Vcb=10V, Ie=Pc(mW)250|S21e| *56 2070180Vce=15V, Ic=Pc(W)0PG(dB)9100 1.1 1.5Vcb=10V, Ie=Pc(mW)100Cre(pF)00.9 1502500Ie=-1mA, f=2Pc(mW)400NF(dB)0 2.8 30000Ie=-10mA, f=Pc(W)1PG(dB)220 30000Ie=-10mA, f=Pc(W)1PG(dB)220 1.200Vce=15V, Ie=Pt(W)*5ft2(GHz) 1.4 1.7048Ie=-1mA, f=1Pc(mW)800Re(hie)*040 91216Ie=-30mA, f=Pt(W)*3Cob(pF)04 2504000Vce=10V,Ie=Pt(mW)800Cob(pF)040 1.1 1.5Vcb=10V, Ie=Pc(mW)250PG(dB)13152 2.70Vce=10V, Ic=Pt(W)3Cob(pF)01 150200Vce=10V, Ic=Pt(W)*4ft(GHz) 1.62 0.601Vce=3V, Ic=1Pt(mW)300△Vbe(V)00 0.601Vce=5V, Ic=3Pt(mW)400△Vbe(V)0001 1.3Ie=0, f=1MHz Pt(mW)250Cc．rbb'*0120 1.9 2.2Ie=0, f=1MHz Pt(mW)250Cc．rbb' *010 360550820Ie=-5mA, f=1Pc(W)400PG(dB)2125 360550820Ie=-5mA, f=1Pc(W)400PG(dB)2125 1050180Vce=10V, Ic=Pc(W)2PG(dB)100 0.801Vce=5V, Ic=1Pt(mW)300△Vbe(V)00 0.801Vce=10V, Ic=Pt(mW)300△Vbe(V)0002500Vcb=-10V, Ie Pc(mW)125Cob(pF)0 1.5 3005000Vce=6V, Ie=-Pc(mW)150Cob(pF)0 1.4 3005000Vce=6V, Ie=-Pc(mW)150Cob(pF)0 1.400.350.45Vcb=12V, Ie=Pc(mW)250PG(dB)252800.350.45Vcb=12V, Ie=Pc(mW)250PG(dB)1822 3006500Vce=-5V, Ie=Pc(mW)200Cob(pF)0 1.2 012Vcb=10V, Ie=Pc(mW)300Cc．rbb'010 012Vcb=10V, Ie=Pc(mW)300Cc．rbb'010Pc(mW)100Cc．rbb'0000.70Vce=6V, f=1M0.801Vce=5V, Ic=1Pt(mW)300△Vbe(V)00 0.801Vce=5V, Ic=1Pt(mW)300△Vbe(V)00 0.801Vce=10V, Ic=Pt(mW)300△Vbe(V)00 0.801Vce=10V, Ic=Pt(mW)300△Vbe(V)00 1050180Vce=10V, Ic=Pc(W)1PG(dB)14.50 1050180Vce=10V, Ic=Pc(W)3PG(dB) 6.70 1050180Vce=10V, Ic=Pc(W)3PG(dB)100 1050180Vce=10V, Ic=Pc(W)1PG(dB)10.70 1050180Vce=10V, Ic=Pc(W)1PG(dB)100 1050180Vce=10V, Ic=Pc(W)*15PG(dB)100 1050180Vce=10V, Ic=Pc(W)*10PG(dB)7.80 1050180Vce=10V, Ic=Pc(W)*20PG(dB) 6.70 1050180Vce=10V, Ic=Pc(W)3PG(dB) 3.70 1050180Vce=10V, Ic=Pc(W)3PG(dB) 5.40Pc(W)1PG(dB)120 1050180Vce=12V,Ic=11050180Vce=10V, Ic=Pc(W)1PG(dB)9.20 1050180Vce=10V, Ic=Pc(W)1PG(dB)100 1050180Vce=10V, Ic=Pc(W)1PG(dB)7.5000.75 1.1Ie=0, f=1MHz Pt(mW)250PG(dB)1315 1050180Vce=10V, Ic=Pc(W)0PG(dB)15.70 1050180Vce=7V, Ic=5Pc(W)0PG(dB)130 1050180Vce=7V, Ic=0Pc(W)0PG(dB)90 1503000Vce=6V, Ie=-Pc(mW)250Cob(pF)0 1.6 1503000Vce=6V, Ie=-Pc(mW)250Cob(pF)0 1.6 3005000Vce=6V, Ie=-Pc(mW)150Cob(pF)0 1.2 1503000Vce=6V, Ie=-Pc(mW)250Cob(pF)0 1.6Pc(mW)250Cob(pF)0 1.6 1503000Vce=6V, Ie=11001500Vce=10V, Ic=Pc(W)1Cob(pF)045 3570300Vce=10V, Ic=Pc(W)0PG(dB)130Pc(W)2PG(dB)8.80 0-300Po=15W(PEP1050180Vce=10V, Ic=Pc(W)7PG(dB)12.30 00250Vcb=12V, Ie=Pc(W)*60PG(dB)120 1050180Vce=10V, Ic=Pc(W)0PG(dB) 6.70 2050110Vce=25V, Ic=Pc(W)3PG(dB)8.20 2050110Vce=25V, Ic=Pc(W)4PG(dB)7000.550Vcb=10V, Ie=Pt(mW)*250|S21e| *7.59.300.60Vcb=10V, Ie=Pt(mW)290|S21e| *5 6.700.350Vcb=8V, Ie=0Pt(mW)*250|S21e| * 1.5 2.7 3570180Vce=10V, Ic=Pc(W)1PG(dB)13.80000.5(V), Ic=20mA Pc(mW)600ft(MHz)30050000.10(V), Ic=10mA Pc(mW)400NF(dB)0 2.8Pc(mW)300Cob(pF)0.80 30000Vce=12.5V, IcRth(j-c)**20ηc(%)6070 0710Vcb=10V, f=11050180Vce=10V, Ic=Pc(W)2PG(dB)13.80 12.200Pc(W)*175IMD(dB)00 1503000Ie=-1mA, f=2Pc(mW)200NF(dB)0 2.8 1802500Vce=10V, Ic=Pc(mW)750Cob(pF)015Rth(j-c)**20ηc(%)5565 0710Vcb=10V, f=10 6.50Vce=14V, Ic=Pt(W)*6Cob(pF)00.9 65000Vce=10V, Ic=Pc(mW)250Cob(pF)0 1.200.30.4Vcb=10V, Ie=Pc(mW)250PG(dB)2024 60000Vce=10V, Ic=Pc(mW)250Cob(pF)0 1.200.751Ie=0, f=1MHz Pt(mW)250|S21e| *91000.370.7Ie=0, f=1MHz Pt(mW)250CG(dB)152300.70.9Vcb=10V, Ie=Pc(mW)200PG(dB)1417Pt(mW)580|S21e| *8900.40Vcb=8V, f=1M4506500Ie=-1mA, f=1Pc(mW)400PG(dB)2024 00150Vcb=12V, Ie=Pc(W)*40PG(dB)17000.81Ic=1mA, f=10Pc(mW)150PG(dB)024 *******Vce=10V, Ic=Pt(mW)*600Cob(pF)01 02300Vce=12V, Ie=Pc(mW)250Cob(pF)0 1.8 02300Vce=12V, Ie=Pc(mW)250Cob(pF)0 1.8 1503000Vce=6V, Ie=-Pc(mW)200Cob(pF)0 1.300.550.8Vcb=10V, Ie=Pc(mW)200PG(dB)141600.230.45Vcb=12V, Ie=Pc(mW)200PG(dB)182300.71Vcb=10V, Ie=Pc(mW)200PG(dB)141800.270.45Vcb=10V, Ie=Pc(mW)200CG(dB)162300 1.5Vcb=10V, Ie=Pc(mW)2000000 1.5Vcb=10V, Ie=Pc(mW)2000000.9 1.5Vcb=10V, Ie=Pc(mW)310Cc．rbb'012010Ic=1mA, f=10Pc(mW)150PG(dB)0200 1.150Vcb=10V, Ie=Pc(mW)300Cre(pF)00.7500.90Vcb=10V, Ie=Pc(mW)300Cre(pF)00.6 12.200Pc(W)*250IMD(dB)000020(ps), Ic=5mA,Pc(mW)300CG(dB)1620 1080300Vce=10V, Ic=Pc(W)0PG(dB)100 1050180Vce=10V, Ic=Pc(W)2PG(dB)14.50 1060180Vce=10V, Ic=Pc(W)4PG(dB)8.200 2.3 3.5Vcb=10V, Ie=Rth(j-c)**21ηc(%)50550710Vcb=10V, Ie=Rth(j-c)**10ηc(%)5560 050Vce=10V, Ic=Pt(mW)600Cob(pF)00.788.50Vce=8V, Ic=7Pt(mW)400Cob(pF)00.20 2.54Vcb=10V, Ie=Pt(W)*700 2050110Vce=25V, Ic=Pc(W)*170PG(dB)6000 3.5Vcb=10V, Ie=Pc(mW)150NF(dB)0500.90Vcb=10V, Ie=Pc(mW)10000 1080180Vce=10V, Ic=Pc(W)2PG(dB)130 1030180Vce=10V, Ic=Pc(W)4PG(dB)11.80 1040180Vce=10V, Ic=Pc(W)3PG(dB)9.30 1040180Vce=10V, Ic=Pc(W)5PG(dB)7000 1.5Ic=1mA, f=10Pc(mW)400Crb(pF)00.80025Vcb=10V, Ie=Pc(W)*15PG(dB)10.80 0080Vcb=10V, Ie=Pc(W)*3500 0110160Vcb=10V, Ie=Pc(W)*7000。
2SK系列场效应管参数（18）
2SK系列场效应管参数（18）发布时间：2009-02-14 15:20:31 来源：资料室作者：WHGUY LOIU 更新20181224 210303 2SK N-CHANNELPOWER MOSFET N沟道功率场效应管型号参数查询及代换型号Drain-to-SourceVoltage漏极到源极电压StaticDrain-SourceOn-StateResistance静态漏源通态电阻ContinuousDrainCurrent连续漏电流(TC=25℃)PD TotalPowerDissipation总功率耗散(TC=25℃）Package封装ToshibaReplacement替换东芝型号Note注意Vender供应商VDSS RDS(ON)ID PD(V)(ohm)欧姆(A)(W)2SK2700900 4.33TO-220IS2SK2700A Toshiba 2SK2717900 2.55TO-220IS2SK2717A Toshiba 2SK2718900 6.4 2.5TO-220IS2SK2718A Toshiba 2SK2719900 4.33TO-3P(N)2SK2719A Toshiba 2SK273390091TO-220AB2SK2733A Toshiba 2SK2741600.165SP2SK2741A Toshiba 2SK27421000.353SP2SK2742A Toshiba 2SK2744500.0245TO-3P(N)2SK2744A Toshiba 2SK2745500.009550TO-3P(N)2SK2745A Toshiba 2SK2746800 1.77TO-3P(N)2SK2746A Toshiba 2SK274990027TO-3P(N)2SK2749A Toshiba 2SK2750600 2.2 3.5TO-220IS2SK2750A Toshiba 2SK27765000.858TO-220FL/SM2SK2776A Toshiba 2SK2777600 1.256TO-220FL/SM2SK2777A Toshiba 2SK2782600.05520DP2SK2782A Toshiba 2SK27891000.08527TO-220FL/SM2SK2789A Toshiba 2SK28352000.85TPS2SK2835A Toshiba 2SK283660091SP2SK2836A Toshiba 2SK28375000.2720TO-3P(N)2SK2837A Toshiba 2SK2838400 1.2 5.5TO-220FL/SM2SK2838A Toshiba 2SK2839300.0410SP2SK2839A Toshiba 2SK28402501 4.5TO-220IS2SK2840A Toshiba 2SK28414000.5510TO-220AB2SK2841A Toshiba 2SK28425000.5212TO-220IS2SK2842A Toshiba 2SK28436000.7510TO-220IS2SK2843A Toshiba 2SK2844300.0235TO-220AB2SK2844A Toshiba 2SK284590091DP2SK2845A Toshiba 2SK284660052TPS2SK2846A Toshiba 2SK2847900 1.48TO-3P(N)IS2SK2847A Toshiba 2SK28591000.42SOP-8(Single)Sanyo 2SK286250032TO-220IS2SK2862A Toshiba2SK286560052POWER2SK2865A Toshiba2SK2883800 3.63TO-220FL/SM2SK2883A Toshiba 2SK2884800 2.25TO-220FL/SM2SK2884A Toshiba 2SK2886500.0245TO-220IS2SK2886A Toshiba 2SK28896000.7510TO-220FL/SM2SK2889A Toshiba 2SK29142500.58.5TO-220AB2SK2914A Toshiba 2SK29156000.416TO-3P(N)2SK2915A Toshiba 2SK29165000.414TO-3P(N)IS2SK2916A Toshiba 2SK29175000.2718TO-3P(N)IS2SK2917A Toshiba2SK29202000.85POWERMOLD2SK2920A Toshiba2SK29494000.5510TO-220FL/SM2SK2949A Toshiba 2SK29524000.558.5TO-220IS2SK2952A Toshiba 2SK29536000.415TO-3P(N)IS2SK2953A Toshiba 2SK2961600.272TO-92MOD2SK2961A Toshiba 2SK29621000.71TO-92MOD2SK2962A Toshiba 2SK29631000.71POWER-MINI2SK2963A Toshiba 2SK2964300.172POWER-MINI2SK2964A Toshiba 2SK29652000.2611TO-220IS2SK2965A Toshiba 2SK29662500.3210TO-220IS2SK2966A Toshiba 2SK29672500.0730TO-3P(N)2SK2967A Toshiba 2SK2968900 1.2510TO-3P(N)2SK2968A Toshiba 2SK2985600.005845TO-220IS2SK2985A Toshiba 2SK2986600.005845TO-220FL/SM2SK2986A Toshiba 2SK2987600.005870TO-3P(N)2SK2987A Toshiba 2SK2989500.155TO-92MOD2SK2989A Toshiba 2SK2991500 1.55TO-220FL/SM2SK2991A Toshiba 2SK2992200 3.51POWER-MINI2SK2992A Toshiba 2SK29932500.1120TO-220FL/SM2SK2993A Toshiba 2SK29952500.0730TO-3P(N)IS2SK2995A Toshiba 2SK2996600110TO-220IS2SK2996A Toshiba 2SK29978008 1.5DP2SK2997A Toshiba 2SK2998500180.5TO-92MOD2SK2998A Toshiba 2SK3017900 1.258TO-3P(N)IS2SK3017A Toshiba 2SK3051600.0345TO-220FL/SM2SK2266A Toshiba 2SK306760052TO-220IS2SK3067A Toshiba 2SK30685000.5212TO-220FL/SM2SK3068A Toshiba 2SK3085600 2.2 3.5TO-220AB2SK3085A Toshiba 2SK3088900 4.33TO-220FL/SM2SK3088A Toshiba 2SK3089300.0340TO-220FL/SM2SK3089A Toshiba 2SK3090300.0245TO-220FL/SM2SK3090A Toshiba 2SK31175000.2720TO-3P(SM)2SK3117A Toshiba 2SK3125300.00760TO-3P(SM)2SK3125A Toshiba 2SK31264500.6510TO-220IS2SK3126A Toshiba 2SK3127300.01145TO-220FL/SM2SK3127A Toshiba 2SK3128300.01160TO-3P(N)2SK3128A Toshiba 2SK31762000.05230TO-3P(N)2SK3176A Toshiba105来顶⼀下返回⾸页18/18⾸页2SK N-CHANNELPOWER MOSFET N沟道功率场效应管型号参数查询及代换型号Drain-to-Source Voltage漏极到源极电压 Static Drain-SourceOn-State Resistance静态漏源通态电阻Continuous Drain Current连续漏电流(TC=25℃)PD Total Power Dissipation 总功率耗散(TC=25℃）Package封装Toshiba Replacement 替换东芝型号 Note 注意Vender 供应商VDSS RDS(ON) ID PD (V) (ohm)欧姆(A) (W)2SK11191000 3.8 4TO-220AB 2SK1119 AToshiba2SK11201000 1.8 8TO-3P(N) 2SK1120 AToshiba2SK13591000 3.8 5TO-3P(N) 2SK1359 AToshiba2SK13651000 1.8 7TO-3P(N)IS 2SK1365 AToshiba2SK14891000 1 12TO-3P(L) 2SK1489 AToshiba2SK19301000 3.8 42SK217360 0.017 50TO-3P(N) 2SK2173 AToshiba 2SK2200100 0.35 3TPS 2SK2200 AToshiba 2SK2201100 0.35 3POWER MOLD 2SK2201 AToshiba 2SK222960 0.16 5TPS 2SK2229 AToshiba 2SK223160 0.16 5POWER MOLD 2SK2231 AToshiba 2SK223260 0.046 25TO-220IS 2SK2232 AToshiba 2SK223360 0.03 45TO-3P(N) 2SK2233 AToshibaTO-220FL/SM 2SK2266 AToshiba 2SK226760 0.011 60TO-3P(L) 2SK2267 AToshiba 2SK2274700 1.7 5TO-220IS 2SK2274 AToshiba 2SK231160 0.046 25TO-220FL/SM 2SK2311 AToshiba 2SK231260 0.017 45TO-220IS 2SK2312 AToshiba 2SK231360 0.011 60TO-3P(N) 2SK2313 AToshiba 2SK2314100 0.085 27TO-220AB 2SK2314 AToshiba 2SK2350200 0.4 8.5 TO-220IS 2SK2350 A Toshiba200 0.18 15 TO-220IS 2SK2382 A Toshiba2SK238560 0.03 36 TO-220IS 2SK2385 A Toshiba2SK2389700 1.7 5 TO-220AB 2SK2389 A Toshiba2SK2391100 0.085 20 TO-220IS 2SK2391 A Toshiba2SK239860 0.03 45 TO-3P(N) 2SK2233 A Toshiba2SK2399100 0.23 5 POWER MOLD 2SK2399 A Toshiba 2SK2400100 0.23 5 TPS 2SK2400 A Toshiba2SK2401200 0.18 15 TO-220FL/SM 2SK2401 A Toshiba 2SK2417250 0.5 7.5 TO-220IS 2SK2417 A Toshiba2SK244020 0.038 6 SOP-8(Single) TPC8008 A Sanyo 2SK244120 0.032 7 SOP-8(Single) TPC8008 A Sanyo 2SK244230 0.029 7 SOP-8(Single) TPC8006-H A Sanyo 2SK244560 0.018 50 TO-3P(N) 2SK2445 A Toshiba2SK2466100 0.046 30 TO-220IS 2SK2466 A Toshiba2SK249316 0.1 5 POWER MOLD 2SK2493 A Toshiba 2SK250750 0.046 25 TO-220IS 2SK2507 A Toshiba500 0.85 8 TO-220IS 2SK2543 A Toshiba2SK2544600 1.25 6 TO-220AB 2SK2544 A Toshiba2SK2545600 1.25 6 TO-220IS 2SK2545 A Toshiba2SK254916 0.29 2 POWER-MINI 2SK2549 A Toshiba 2SK255050 0.03 45 TO-3P(N) 2SK2550 A Toshiba2SK255150 0.011 50 TO-3P(N) 2SK2551 A Toshiba2SK255630 0.04 6 SOP-8(Single) TPC8006-H A Sanyo 2SK255730 0.037 7 SOP-8(Single) TPC8006-H A Sanyo 2SK2598250 0.25 13 TO-220FL/SM 2SK2598 A Toshiba 2SK2599500 3 2 TPS 2SK2599 A Toshiba2SK2600500 0.85 8 TO-3P(N)IS 2SK2600 A Toshiba2SK2601500 1 10 TO-3P(N) 2SK2601 A Toshiba2SK2602600 1.25 6 TO-3P(N) 2SK2602 A Toshiba2SK2603800 3.6 3 TO-220AB 2SK2603 A Toshiba2SK2604800 2.2 5 TO-3P(N) 2SK2604 A Toshiba2SK2605800 2.2 5 TO-220IS 2SK2605 A Toshiba900 4.3 3 TO-220AB 2SK2608 A Toshiba2SK2610900 2.5 5 TO-3P(N) 2SK2610 A Toshiba2SK2611900 1.4 9 TO-3P(N) 2SK2611 A Toshiba2SK26131000 1.7 8 TO-3P(N) 2SK2613 A Toshiba2SK261450 0.046 20 DP 2SK2614 A Toshiba2SK261560 0.37 2 POWER-MINI 2SK2615 A Toshiba2SK263720 0.025 8 SOP-8(Single) TPC8008 A Sanyo2SK2661500 1.5 5 TO-220AB 2SK2661 A Toshiba2SK2662500 1.5 5 TO-220IS 2SK2662 A Toshiba2SK2679400 1.2 5.5 TO-220IS 2SK2679 A Toshiba2SK2698500 0.4 15 TO-3P(N) 2SK2698 A Toshiba2SK2699600 0.65 12 TO-3P(N) 2SK2699 A Toshiba' href='/diode/863_17.htm'>上⼀页2SK POWER MOSFET功率场效应管型号参数替换型号⼚家⽤途构造沟道漏源极电压(V)漏极电流(A)最⼤功耗(W)封装形式 2SK2251-01 富⼠电机 SW-Reg, UPS, DDC, A MOS N 250 2 20 4-234 2SK2252-01L, S 富⼠电机 SW-Reg, UPS, DDC, A MOS N 250 8 50 4-389 2SK2253-01M 富⼠电机 SW-Reg, UPS, DDC, A MOS N 250 8 20 4-390 2SK2254-01L, S 富⼠电机 SW-Reg, UPS, DDC, A MOS N 250 18 80 4-3892SK2255-01M 富⼠电机 SW-Reg, UPS, DDC, A MOS N 250 18 50 4-390 2SK2256-01 富⼠电机 SW-Reg, UPS, DDC, A MOS N 250 18 80 4-234 2SK2257-01 富⼠电机 SW-Reg, UPS, DDC, A MOS N 500 17 150 4-186 2SK2258-01 富⼠电机 SW-Reg, UPS, DDC, A MOS N 1000 4 100 4-186 2SK2259-01M 富⼠电机 - MOS N 60 40 40 4-390 2SK2264 ⽇⽴ LF/RF A, HS SW MOS N 350 5 100 4-149 2SK2265 ⽇⽴ LF/RF A, HS SW MOS N 400 5 100 4-149 2SK2266东芝 HS SW, DDC MOS N 60 45 65 4-341 2SK2267 东芝 HS SW, DDC MOS N 60 60 150 4-元 HS SW MOS N 60 10 15 4-290 2SK2282 新电元 HS SW MOS N 60 10 30 4-383 2SK2283新电元 HS SW MOS N 60 10 20 4-304 2SK2284 新电元 HS SW MOS N 60 15 40 4-3832SK2285 新电元 HS SW MOS N 60 15 25 4-304 2SK2286 新电元 HS SW MOS N 60 20 50 4-383 2SK2287 新电元 HS SW MOS N 60 20 30 4-304 2SK2288 新电元 HS SW MOS N 60 30 60 4-383 2SK2289 新电元 HS SW MOS N 60 30 40 4-304 2SK2290 新电元 HS SW MOS N 60 45 60 4-383 2SK2291 新电元 HS SW MOS N 60 45 50 4-304 2SK2311 东芝 HS SW, SW-Reg, DDC MOS N 60 25 40 4-341 2SK2312 东芝 HS SW, DDC MOS N 60 45 45 4-335 2SK2313 东芝 HS SW, DDC MOS N 60 60 150 4-184 2SK2315 ⽇⽴ HS PSW MOS N 60 ±2 1 4-2952SK2316 三洋 - MOS N 20 2 3.5 4-252 2SK2317 三洋 - MOS N 20 4 20 - 2SK2318 三洋 - MOS N 20 12 30 - 2SK2319 东芝 HS SW, SW-Reg, DDC MOS N 800 7 90 4-388 2SK2320 东芝 HS SW, SW-Reg, DDC MOS N 800 8.5 90 4-388 2SK2322(L)(S) ⽇⽴ HS PSW MOS N 60 15 50 4-294 2SK2328 ⽇⽴ HS PSW MOS N 650 7 75 4-116B 2SK2329(L)(S) ⽇⽴ HS PSW MOS N 30 10 20 4-377, 378 2SK2330(L)(S) ⽇⽴ HS PSW MOS N 500 15 100 4-379, 380 2SK2333 新电元 HS SW MOS N 700 6 50 4-304 2SK2334(L)(S) ⽇⽴ HS PSW MOS N 60 20 30 4-377, 378 2SK2341 NEC - MOS N 250 ±11 35 4-304 2SK2344 三洋 HS SW MOS N 20 7 2 4-3862SK2345 ⽇⽴ HS PSW MOS N 350 6 35 4-292 2SK2346 ⽇⽴ HS PSW MOS N 60 20 25 4-292 2SK2353 NEC - MOS N 450 ±4.5 30 4-304 2SK2354 NEC - MOS N 500 ±4.5 30 4-3042SK2355 NEC - MOS N 450 ±5 50 4-287 2SK2356 NEC - MOS N 500 ±5 50 4-287 2SK2357 NEC - MOS N 450 ±6 35 4-304 2SK2358 NEC - MOS N 500 ±6 35 4-304 2SK2359 NEC -MOS N 450 ±7 75 4-287 2SK2360 NEC - MOS N 500 ±7 75 4-287 2SK2361 NEC - MOS N 450 ±10 100 4-253 2SK2362 NEC - MOS N 500 ±10 100 4-253 2SK2363 NEC - MOS N 450±10 35 4-304 2SK2364 NEC - MOS N 500 ±10 35 4-304 2SK2365 NEC - MOS N 450 ±12 75 4-287 2SK2366 NEC - MOS N 500 ±12 75 4-287 2SK2367 NEC - MOS N 450 ±15 120 4-253 2SK2368 NEC - MOS N 500 ±15 120 4-253 2SK2369 NEC - MOS N 450 ±20 120 4-2532SK2370 NEC - MOS N 500 ±20 120 4-253 2SK2371 NEC - MOS N 450 ±25 160 4-2532SK2372 NEC - MOS N 500 ±25 160 4-253 2SK2373 ⽇⽴ HS PSW MOS N 30 0.2 0.15 4-185B 2SK2376 东芝 HS SW, DDC MOS N 60 45 100 4-341 2SK2390 ⽇⽴ HS PSW MOS N 60 12 20 4-376 2SK2393 ⽇⽴ HS PSW MOS N 1500 8 200 4-296 2SK2394 三洋 RF LN A J N 15 10m 200m 4-126A 2SK2395 三洋 RF LN A J N 15 10m 300m 4-157A 2SK2408 ⽇⽴ HS PSW MOS N 500 7 60 4-116B 2SK2418(L)(S) ⽇⽴ HS PSW MOS N 20 7 20 4-377, 3782SK2423 ⽇⽴ HS PSW MOS N 450 7 35 4-376 2SK2424 ⽇⽴ HS PSW MOS N 450 8 35 4-376 2SK2425 ⽇⽴ HS PSW MOS N 250 7 30 4-376 2SK2426 ⽇⽴ HS PSW MOS N 250 12 35 4-376 2SK2431 ⽇⽴ HS PSW MOS N 450 3 25 4-376 2SK2441 三洋 HS SW MOS N 20 7 2 4-385 2SK254 NEC CATV Tuner MOS N 18 25m 130m 4-352' href='/diode/863_16.htm'>162SK N-CHANNELPOWER MOSFET N沟道功率场效应管型号参数查询及代换型号Drain-to-Source Voltage漏极到源极电压 Static Drain-SourceOn-State Resistance静态漏源通态电阻Continuous Drain Current连续漏电流(TC=25℃)PD Total Power Dissipation 总功率耗散(TC=25℃）Package封装Toshiba Replacement 替换东芝型号 Note 注意Vender 供应商VDSS RDS(ON) ID PD (V) (ohm)欧姆(A) (W)2SK11191000 3.8 4TO-220AB 2SK1119 AToshiba2SK11201000 1.8 8TO-3P(N) 2SK1120 A1000 3.8 5TO-3P(N) 2SK1359 AToshiba 2SK13651000 1.8 7TO-3P(N)IS 2SK1365 AToshiba 2SK14891000 1 12TO-3P(L) 2SK1489 AToshiba 2SK19301000 3.8 4TO-220FL/SM 2SK1930 AToshiba 2SK217360 0.017 50TO-3P(N) 2SK2173 AToshiba 2SK2200100 0.35 3TPS 2SK2200 AToshiba 2SK2201100 0.35 3POWER MOLD 2SK2201 AToshiba 2SK2229TPS 2SK2229 AToshiba 2SK223160 0.16 5POWER MOLD 2SK2231 AToshiba 2SK223260 0.046 25TO-220IS 2SK2232 AToshiba 2SK223360 0.03 45TO-3P(N) 2SK2233 AToshiba 2SK226660 0.03 45TO-220FL/SM 2SK2266 AToshiba 2SK226760 0.011 60TO-3P(L) 2SK2267 AToshiba 2SK2274700 1.7 5TO-220IS 2SK2274 AToshiba 2SK231160 0.046 25TO-220FL/SM 2SK2311 AToshiba60 0.017 45TO-220IS 2SK2312 AToshiba 2SK231360 0.011 60TO-3P(N) 2SK2313 AToshiba 2SK2314100 0.085 27TO-220AB 2SK2314 AToshiba 2SK2350200 0.4 8.5 TO-220IS 2SK2350 A Toshiba2SK237660 0.017 45 TO-220FL/SM 2SK2376 A Toshiba2SK2381200 0.8 5 TO-220IS 2SK2381 A Toshiba2SK2382200 0.18 15 TO-220IS 2SK2382 A Toshiba2SK238560 0.03 36 TO-220IS 2SK2385 A Toshiba2SK2389700 1.7 5 TO-220AB 2SK2389 A Toshiba2SK2391100 0.085 20 TO-220IS 2SK2391 A Toshiba2SK239860 0.03 45 TO-3P(N) 2SK2233 A Toshiba2SK2399100 0.23 5 POWER MOLD 2SK2399 A Toshiba2SK2400100 0.23 5 TPS 2SK2400 A Toshiba2SK2401200 0.18 15 TO-220FL/SM 2SK2401 A Toshiba250 0.5 7.5 TO-220IS 2SK2417 A Toshiba2SK244020 0.038 6 SOP-8(Single) TPC8008 A Sanyo 2SK244120 0.032 7 SOP-8(Single) TPC8008 A Sanyo 2SK244230 0.029 7 SOP-8(Single) TPC8006-H A Sanyo 2SK244560 0.018 50 TO-3P(N) 2SK2445 A Toshiba2SK2466100 0.046 30 TO-220IS 2SK2466 A Toshiba2SK249316 0.1 5 POWER MOLD 2SK2493 A Toshiba 2SK250750 0.046 25 TO-220IS 2SK2507 A Toshiba2SK2508250 0.25 13 TO-220IS 2SK2508 A Toshiba2SK2542500 0.85 8 TO-220AB 2SK2542 A Toshiba2SK2543500 0.85 8 TO-220IS 2SK2543 A Toshiba2SK2544600 1.25 6 TO-220AB 2SK2544 A Toshiba2SK2545600 1.25 6 TO-220IS 2SK2545 A Toshiba2SK254916 0.29 2 POWER-MINI 2SK2549 A Toshiba 2SK255050 0.03 45 TO-3P(N) 2SK2550 A Toshiba2SK255150 0.011 50 TO-3P(N) 2SK2551 A Toshiba2SK255630 0.04 6 SOP-8(Single) TPC8006-H A Sanyo 2SK255730 0.037 7 SOP-8(Single) TPC8006-H A Sanyo250 0.25 13 TO-220FL/SM 2SK2598 A Toshiba 2SK2599500 3 2 TPS 2SK2599 A Toshiba2SK2600500 0.85 8 TO-3P(N)IS 2SK2600 A Toshiba2SK2601500 1 10 TO-3P(N) 2SK2601 A Toshiba2SK2602600 1.25 6 TO-3P(N) 2SK2602 A Toshiba2SK2603800 3.6 3 TO-220AB 2SK2603 A Toshiba2SK2604800 2.2 5 TO-3P(N) 2SK2604 A Toshiba2SK2605800 2.2 5 TO-220IS 2SK2605 A Toshiba2SK2606800 1.2 8.5 TO-3P(N)IS 2SK2606 A Toshiba2SK2607800 1.2 9 TO-3P(N) 2SK2607 A Toshiba2SK2608900 4.3 3 TO-220AB 2SK2608 A Toshiba2SK2610900 2.5 5 TO-3P(N) 2SK2610 A Toshiba2SK2611900 1.4 9 TO-3P(N) 2SK2611 A Toshiba2SK26131000 1.7 8 TO-3P(N) 2SK2613 A Toshiba2SK261450 0.046 20 DP 2SK2614 A Toshiba2SK261560 0.37 2 POWER-MINI 2SK2615 A Toshiba 2SK263720 0.025 8 SOP-8(Single) TPC8008 A Sanyo 2SK2661500 1.5 5 TO-220AB 2SK2661 A Toshiba500 1.5 5 TO-220IS 2SK2662 A Toshiba 2SK2679400 1.2 5.5 TO-220IS 2SK2679 A Toshiba 2SK2698500 0.4 15 TO-3P(N) 2SK2698 A Toshiba 2SK2699600 0.65 12 TO-3P(N) 2SK2699 A Toshiba。
K2837(2SK2837)产品参数
S il ili i c o n N-ChCha a n n el M OSOSF F ET Features■24A,500V,RDS(on)(Max0.19Ω)@V GS=10V■Ultra-low Gate charge(Typical90nC)■Fast Switching Capability■100%Avalanche Tested■Maximum Junction Temperature Range(150℃)General DescriptionThis N-Channel enhancement mode power field effect transistorsare produced using Winsemi's proprietary,planar stripe,DMOStechnology.This advanced technology has been especially tailoredto minimize on-state resistance,provide superior switchingperformance,and withstand high energy pulse in the avalanche andcommutation mode.These devices are well suited for highefficiency switch mode power supplies.Absolute Maximum RatingsSymbol Parameter Value Units V DSS Drain Source Voltage500VI D Continuous Drain Current(@Tc=25℃)24A Continuous Drain Current(@Tc=100℃)15.2AI DM Drain Current Pulsed(Note1)96A V GS Gate to Source Voltage±30V E AS Single Pulsed Avalanche Energy(Note2)1100mJ E AR Repetitive Avalanche Energy(Note1)29mJ dv/dt Peak Diode Recovery dv/dt(Note3) 4.5V/nsP D Total Power Dissipation(@Tc=25℃)271W Derating Factor above25℃ 2.22W/℃T J,T stg Junction and Storage Temperature-55~150℃T L Channel Temperature300℃Thermal CharacteristicsSymbol ParameterValueUnits Min Typ MaxR QJC Thermal Resistance,Junction-to-Case--0.46℃/W R QJA Thermal Resistance,Junction-to-Ambient--40℃/WCharacteristicsSymbolTest ConditionMinTypeMaxUnitGate leakage currentI GSS V GS =±25V,V DS =0V --±100nA Gate-source breakdown voltage V (BR)GSSI G =±10µA,V DS =0V ±30--V Drain cut -off currentI DSS V DS=500V,V GS =0V --1µAV DS =400V,Tc=125℃10Drain -source breakdown voltage V (BR)DSS I D =10mA,V GS =0V 500--V Breakdown voltage Temperature coefficient△BV DSS /△T J I D =250µA,Referenced to 25℃-0.53-V/℃Gate threshold voltage V GS(th)V DS =10V,I D =1mA 3.0- 5.0V Drain -source ON resistance R DS(ON)V GS =10V,I D =9A -0.160.19ΩForward Transconductance gfs V DS =40V,I D =9A -22-SInput capacitanceC iss V DS =25V,V GS =0V,f=1MHz -35004500pFReverse transfer capacitance C rss -5570Output capacitanceC oss -520670Switching timeRise timetr V DD =250V,I D =18A R G =25Ω(Note4,5)-250500nsTurn-on time ton -80170Fall time tf -155320Turn-off timetoff -200400Total gate charge(gate-source plus gate-drain)Qg V DD =400V,V GS =10V,I D =18A(Note4,5)-90120nCGate-source charge Qgs -23-Gate-drain("miller")ChargeQgd-44-CharacteristicsSymbolTest ConditionMinTypeMaxUnitContinuous drain reverse current I DR ---24A Pulse drain reverse current I DRP ---96A Forward voltage(diode)V DSF I DR =24A,V GS =0V -- 1.4V Reverse recovery time trr I DR =24A,V GS =0V,dI DR /dt =100A /µs-400-ns Reverse recovery chargeQrr-4.3-µCElectrical Characteristics(Tc=25℃)Source-Drain Ratings and Characteristics(Ta=25℃)Note 1.Repeativity rating :pulse width limited by junction temperature2.L=3.4mH I AS =24A,V DD =50V,R G =25Ω,Starting T J =25℃3.I SD ≤24A,di/dt≤200A/us,V DD <BV DSS ,STARTING T J =25℃4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%5.Essentially independent of operating temperature.This transistor is an electrostatic sensitive device Please handle with cautionFig.1O n St Sta a te Ch Cha a r ac act t e r i s ti ticc s Fig.2T r a n s f e r Curr Curre e n t Ch Cha a r ac act t e r i s ti ticc sFig.3O n-R n-Res es esii s t a n c e V a r i a tion v s Dr Dra a i n Curr Curre e n t a n d g a te v olt oltaa ge Fig.4Body Diode For Forw w a rd V ol oltt a ge V a r i a tion w i th Sour Sourc c e Curr Curre e n t a n d T em empp e r a tureFig.5C a p ac aci i t a n c e Ch Cha a r ac act t e ri riss t i c s Fig.6G a te Ch Cha a r g e Ch Cha a r ac act t e r i s ti ticc sFig.7Br Break eak eakd d o w n V ol oltt a ge V a r i a tion Fig.8O n-R n-Res es esii s t a n c e V a r i a tion v s .T em empp e r a tureFig.9Max Maxii m um S a fe O p e r a t i on A r e a Fig.Fig.110Max Maxi i m um Dr Dra a i n Curr Curre e n t v s C as ase e T em empp e r a tureFig Fig..11T r a n s i e nt Th The e r ma mal l R es esp p on ons s e Cur Curvv eCirc c u it&W a v e formest t CirFig.112G a te T esFig.esi i s ti tiv v e S w i t c hing T esCirc c u it&W a v e formest t CirFig.Fig.113R esInduc c ti tiv v e S w i t c hing T esest t CirCirc c u it& Unc c l amFig.Fig.114Unamp p e d Induest t CirCirc c u it&W a v e formeco o v e r y d v/dt T eseak k Diode R ecFig.115P eaFig.ckag g e DimDime e n s ionT O-2-2447P a ckaUnit:mm。
航空航天原材料明细表
航空航天原材料明细表的钢棒，锻件和环件 退火的含0.95Cr-0.20Mo(0.38-0.43)(SAE4140)(组成类似UNS G41400)1范围1.1组成本规范包括飞机质量，以低合金钢形式存在的棒材，锻件，闪光焊接和为铸件或闪光焊接环的存货。
1.2应用：这些产品已用于一般零件0.50英寸（12.7mm）和在热处理时低于标准的切片厚度，需要通过硬化钢的发展为50HRC高硬度能力当适当的热处理和零件厚度较大但比例较低的硬度要求，但用法并不限于这些应用。
1.2.1一定的设计和加工程序，在热处理后可能导致这些产品易受应力腐蚀开裂；建议采用ARP1110措施，以尽量减少这种情况。
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2.1汽车工程师协会的出版物：可从汽车工程师协会400英联邦驱动器，每年15096-0001AMS2251公差，低合金钢棒材Mam2251公差，度量，低合金钢棒材AMS2259化学检验分析界限，造成低合金和碳钢AMS2301洁净钢，飞机质量磁粉检验程序，公制（SI）计量AMS2370质量保证取样和测试，碳钢和低合金钢，铸造和锻造用坯AMS2372质量保证取样和测试，碳钢和低合金钢锻件AMS2806鉴定，棒材，线材，机械管材及型材，碳钢，合金钢和耐腐蚀和耐热钢和合金 AMS7496环，闪速焊接，碳钢和低合金钢AS1182标准机械加工余量，飞机质量和高档的飞机质量优质钢棒材和机械管材APR1110铸造钢和耐腐蚀钢和合金形式尽量减少应力腐蚀裂纹2.2美国试验与材料学会出版物可从美国ASTM，100巴尔海港建设，西康舍霍肯，pa19428 – 2959ASTM A255指定钢淬透性ASTM A370 钢产品的力学试验ASTM E112指定平均晶粒尺寸ASTM E 350碳钢，低合金钢，铁心硅钢，铁锭和熟铁ASTM E381 宏观浸蚀试验钢棒材，钢坯，钢锭，锻件ASTM E 384微压痕硬度材料AMS6382M 汽车工程师协会 AMS6382M3. 技术要求3.1组成：应符合表1所显示的百分比重，湿化学方法测定按照与ASTM350, 通过光谱化学方法或买方接受的其他分析方法：表1-组成元素 min max炭 0.38 0.43锰 0.75 1.00硅 0.15 0.35磷 -- 0.025硫 -- 0.025铬 0.80 1.10钼 0.15 0.25镍 -- 0.25铜 -- 0.353.1.1检查分析：成分的变化，应当符合AMS2259的适用要求3.2条件：该产品应提供在后续条件 ；硬度和拉伸强度应按照确定的ASTMA370:3.2.1棒材：英寸（12.70mm）棒材和根据公称直径或至少平行双方之间的距离：3.2.1.1 0.500退火和冷处理后拉伸强度不高于125 KSI（862MPa）或同等硬度（见8.2）3.2.1.2 公称直径超过0.500英寸（12.70mm）的棒材或至少平行双方之间的距离：热退火完成，除非另有命令，具有硬度不大于229HB，或等同（见8.3）。
柯达 全色光学声底片 2374 (聚酯片基) 数据手册
柯达全色光学声底片 2374 (聚酯片基)说明柯达全色光学声底片 2374 是为录制各种区域声轨而设计的一种高反差，全色黑白声带片，使用钨丝灯光源，和/或制作数码声轨底片。
由该底片制作的模拟声底生成高银-, 高品红-, 和纯青色- 声轨。
经过优化，它可生成全部三种类型数码声轨底片：DTS (数码影院系统)，DOLBY 数码，和 SONY SDDS (SONY 动态数码声)。
当曝光和冲洗后,将声轨印制到以下任何一种正片时，都具有出色的效果：柯达 VISION 彩色正片 / 2383.柯达 VISION Premier 彩色正片 / 2393.柯达 VISION 彩色电视用正片 / 2395 (35 mm) 和 3395 (16 mm).柯达黑白正片 / SO-302.伊士曼幼细颗粒发行拷贝的正片胶片 5302 (35 mm) 和 7302 (16 mm).特性好处• 冲洗后依然保留的防静电层。
• 干净的高质量拷贝数量的增加，意味着洗印厂生产率的提高。
• 数码声轨在影院尘土聚积而转到模拟声之前，可以更持久运转• 增加了锐利度。
• 增强的模拟声底宽容度使得交叉调幅补偿补偿更方便。
• 信噪比 (SNR) 增加。
• 高频率响应获得提升。
• 如果 DOLBY DQI 和 SONY SDDS-QC 值更大，数码轨道中的比特清晰度增加。
• 模拟和数码轨道中的声音质量都获提高。
• 数码轨道在发行拷贝上更持久。
• 显影敏感度时间 (TOD)的增加。
• 声音转录室和洗印厂在冲洗声底片时有更大自由度，以达到需要的补偿补偿密度来产生优秀的模拟表现。
[1]• 合成了抗刮划T-层。
• 减少底片刮划的可能，从而提高洗印厂高速印片操作的生产率。
照相冲洗药品的偏差而有所改变。
片基柯达全色光学声底片 2374 涂有 4.7 密耳灰色聚酯安全片基，它有冲洗后依然保留的防静电层。
暗房建议不能使用安全灯。
应在全黑环境下处理未曝光胶片。
储存未曝光的底片应储存于 13°C (55°F) 或以下温度。
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1 3.0 ± 0.2
2
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (2SK2371/2SK2372) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (TC = 25 °C) Total Power Dissipation (Ta = 25 °C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy**
VGS - Gate to Source Voltage - (V) GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 4.0 3.5 3.0 2.5 2.0 1.5 1.0
1.0
0.5 VGS = 10 V
0
1.0
10
100
Pulsed 1000
2.2 ± 0.2 5.45
1.0 ± 0.2 5.45
4.5 ± 0.2
2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A)
6.0
0.6 ± 0.1
2.8 ± 0.1
VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS
MP-88
1. Gate 2. Drain 3. Source 4. Fin (Drain)
Drain
Gate
Body Diode
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
VGS (off) - Gate to Source Cutoff Voltage - V
–50
0
50
100
150
ID - Drain Current - (A)
Tch - Channel Temperature - (°C)
4
2SK2371/2SK2372
CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS(on) MIN. TYP. 0.2 0.22 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) yfs IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 3600 700 50 40 70 160 60 95 20 40 1.0 500 4.5 2.5 8.0 100 ± 100 MAX. 0.25 0.27 3.5 V S UNIT Ω TEST CONDITION VGS = 10 V ID = 13 A 2SK2371 2SK2372
2
2SK2371/2SK2372
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 100 PT - Total Power Dissipation - (W) 210 180 150 120 90 60 30 0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
yfs - Forward Transfer Admittance - (S)
1.0 ID = 25 A 13 A 6A
1.0
0.5
0.1
VDS = 10 V Pulsed 1.0 10 100 1000
0
5
10
15
20
ID - Drain Current - (A) RDS (on) - Drain to Source On-State Resistance - (Ω) DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.5
PW - Pulse Width - (s) RDS (on) - Drain to Source On-State Resistance - (Ω) FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 Tch = –25 °C 25 °C 75 °C 125°C 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.5 Pulsed
TA = 25 °C Single Pulse ID (pulse) P W =1 10 0µ 0µ s s 1m s 10 ms
ID - Drain Current - (A)
100 ID (DC) 10
ID (DC)
Po
we
10
rD
iss
ipa
1.0
tio
nL
im
5
itd
5V
0.1 1
10
2SK2371 2SK2372 100
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-Resistance
20.0 ± 0.2 1.0
15.7 MAX. 4
3.2 ± 0.2
4.7 MAX. 1.5 7.0
2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A) • Low Ciss Ciss = 3600 pF TYP. • High Avalanche Capability Ratings
1 000
0
5
10
15
VDS - Drain to Source Voltage - (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 100
VDS - Drain to Source Voltage - (V)
ID - Drain Current - (A)
ID Wave Form
Starting Tch
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50 Ω
RL VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
80
60
40
20020源自406080100 120 140 160
TC - Case Temperature - (°C) FORWARD BIAS SAFE OPERATING AREA 1 000
ed imit ) n) L (o S RD S = 10 V ( VG
TC - Case Temperature - (°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 VGS = 10 V ID - Drain Current - (A) 15 8V 6V Pulsed
RL VDD
VGS Wave Form
VGS
0 10 % VGS (on) 90 %
ID
90 % 90 % ID 0 10 % td (on) ton tr td (off) toff 10 % tf
BVDSS IAS ID VDD VDS
VGS 0 t t = 1US Duty Cycle ≤ 1%
VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 13 A VDS = VDSS, VGS = 0 VGS = ± 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 13 A VGS = 10 V VDD = 150 V RG = 10 Ω RL = 11.5 Ω ID = 25 A VDD = 400 V VGS = 10 V IF = 25 A, VGS = 0 IF = 25 A, VGS = 0 di/dt = 50 A/µS