2SJ449中文资料

VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
–1.0
–10
–100
–1000
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
–100
Pulsed
ID - Drain Current - A
ID - Drain Current - A
–10
TA= –25 ˚C
25 ˚C
–10
–15
–20
VDS - Drain to Source Voltage - V
3
|yfs| - Forward Transfer Admittance - S
2SJ449
1 000 100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-a) = 62.5 ˚C/W
1.5
Pulsed
1.0 VGS = –10 V –20 V
0.5
0
–1.0
–10
–100
ID - Drain Current - A
VGS(off) - Gate to Source Cutoff Voltage - V
0
–5
–10
–15
VGS - Gate to Source Voltage - V
30 25
20 15
10 5
0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
Pulsed –20
–16
VGS= –20 V
–10 V
–12
–8 –4
0
–5
–3 A
–1.2 A
0.5
RDS(on) - Drain to Source On-State Resistance - Ω
0.1 –0.1
–1.0
–10
ID - Drain Current - A
–100
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
3 ±0.1
PACKAGE DIMENSIONS (in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
13.5 MIN. 12.0 ±0.2
15.0 ±0.3
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
signed for high voltage switching applications.
FEATURES • Low On-Resistance
RDS(on) = 0.8 Ω MAX. (@ VGS = –10 V, ID = –3.0 A)
• Low Ciss Ciss = 1040 pF TYP. • High Avalanche Capability Ratings • Isolated TO-220 Package
SYMBOL RDS(on) VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
MIN.
–4.0 2.0
TYP. 0.55 –4.8 3.5
1040 360 70 24 16 47 14 23.1 7.1 12.9 0.92 155 930
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
dT - Percentage of Rated Power - %
100 80 60 40 20
0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
RG = 25 Ω
L
PG
50 Ω
VDD
VGS = –20 → 0 V
ID VDD
IAS BVDSS VDS
Test Circuit 3 Gate Charge
D.U.T. IG = –2 mA
VDSS
–250
V
Gate to Source Voltage
VGSS
m30
V
Drain Current (DC)
ID(DC)
m6.0
A
Drain Current (pulse)*
ID(pulse)
m24
A
Total Power Dissipation (Tc = 25 ˚C) PT1
35
W
Total Power Dissipation (TA = 25 ˚C) PT2
Gate
Body Diode
Source
Document No. D10030EJ1V0DS00 Date Published May 1995 P Printed in Japan
©
1995
2SJ449
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
rth(t) - Transient Thermal Resistance - ˚C/W
10 Rth(ch-c) = 3.57 ˚C/W
1
0.1
0.01
0.001
10 µ
100 µ
1m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10
100 1 000
FORWARD TRANSFER ADMITTANCE vs.
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = –20 V → 0
4 ±0.2
0.7 ±0.1 2.54
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 0.65 ±0.1 2.54
1 23
1. Gate 2. Drain 3. Source
MP-45F(ISOLATED TO-220) Drain
10 –1.0
Crss
–10
–100
VDS - Drain to Source Voltage - V
–1 000
REVERSE RECOVERY TIME vs. DRAIN CURRENT
1000
di/dt = 50 A/µs VGS = 0
100
10
1.0
0.1
1.0
10
100
ID - Drain Current - A
MAX. 0.8 –5.5
–100 m100
UNIT Ω V S µA nA pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CONDITIONS VGS = –10 V, ID = –3.0 A VDS = –10 V, ID = –1 mA VDS = –10 V, ID = –3.0 A VDS = –250 V, VGS = 0 VGS = m30 V, VDS = 0 VDS = –10 V VGS = 0 f = 1 MHz ID = –3.0 A VGS(on) = –10 V VDD = –125 V RG = 10 Ω, RL = 42 Ω ID = –6.0 A VDD = –200 V VGS = –10 V IF = –6.0 A, VGS = 0 IF = –6.0 A, VGS = 0 di/dt = 50 A/µs
FORWARD BIAS SAFE OPERATING AREA –100
–10 –1.0
TCR(=DaSt(oV2nG)5SLi=˚mC–it2e0dPVIoD)w(DeCr)DissipaIDDt1iC(o0p0nu1ls0mLeims)ms1itemPdWs = 100µs
–0.1 Single Pulse
DRAIN CURRENT
100
VDS = –10 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
1.5 Pulsed