FSS145中文资料

G
FSS145 P.G 50Ω
1.5 1.8 MAX
S
0.595
1.27
0.1
--6.0 V
V
--8 --7 --6 --5 --4 --3 --2 --1 0 0
ID -- VDS
--3.3
--3 . 0V
--12
ID -- VGS
VDS= --10V
--2.8V
--10
Drain Current, ID -- A
Ciss
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
3 2
Ciss, Coss, Crss -- pF
3 2
tf
100 7 5
1000 7 5 3 2
td(on)
3 2
tr
Coss
Crss
10 --0.1
100 7 2 3 5 7 --1.0 2 3 5 7 --10 2 3 0 --5 --10 --15 --20 --25 --30 --35 --40 --45
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0V VDS=-45V, VGS=0V VGS=± 16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=--8A ID=--8A, VGS=-10V ID=--4A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --45 --1 ± 10 --1.2 10 17 18 28 3490 370 290 35 65 270 125 24 40 --2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns
Drain Current, ID -- A
--10 --9
IT10751 --100 7 5 3 2
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
IT10752
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --24V ID= --8A Drain Current, ID -- A
Marking : S145
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
Package Dimensions unit : mm 7005-002
8 5
0.3
Switching Time Test Circuit
VIN 0V --10V VIN
VDD= --24V
ID= --8A RL=3Ω
4.4
6.0
PW=10µs D.C.≤1%
D
VOUT
1
4
0.43 0.2
5.0
1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8
元器件交易网
FSS145
5
yfs -- ID
VDS= --10V
C 25°
Forward Transfer Admittance, yfs -- S
3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
70 60 50 40 30 20 10 0 --1
50
40
ID= --4A --8A
30
-I D=
= --4 VGS 4A,
.0V
20
8A, VG I D= --
--10 S=
.0V
10
IS -- VSD
VGS=0V
Tc= 75
25°C
--0.6
0.01 --0.001 2 3 5 7--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain Current, ID -- A IT10749 7 5
--0.01 7 5 3 2 --0.001 --0.2
元器件交易网
Ordering number : ENA0341
FSS145
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
FSS145
Features
• • •
General-Purposs
--2
--3
--4
--5
--6
--7
--8
--9
--10
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT10747
Ambient Temperature, Ta -- °C
IT10748
No. A0341-2/4
--0.4
--25°
--0.8
= Tc
°C
--2
C 5°
C
75
°C
Source Current, IS -- A
--1.0
--1.2 IT10750
SW Time -- ID
td(off)
VDD= --24V VGS= --10V
10000 7 5
Ciss, Coss, Crss -- VDS
f=1MHz
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--24V, VGS=--10V, ID=-8A VDS=--24V, VGS=--10V, ID=-8A VDS=--24V, VGS=--10V, ID=-8A IS=--8A, VGS=0V Ratings min typ 63 9 12 --0.81 --1.5 max Unit nC nC nC V