BTA208S-600E中文资料

BTA208S-600E中文资料

Philips Semiconductors Objective specification

Three quadrant triacs BTA208S series D, E and F

guaranteed commutation

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated guaranteed commutation SYMBOL

PARAMETER

MAX.MAX.UNIT

triacs in a plastic envelope suitable for surface mounting,intended for use in BTA208S-600D -motor control circuits or with other highly BTA208S-600E 800E inductive loads.These devices balance BTA208S-600F 800F the requirements of commutation V DRM Repetitive peak off-state 600800V performance and gate sensitivity.The voltages "sensitive gate"E series and "logic level"I T(RMS)RMS on-state current

88A D series are intended for interfacing with I TSM

Non-repetitive peak on-state 65

65

A

low power drivers,including micro current

controllers.

PINNING - SOT428

PIN CONFIGURATION

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER

MIN.MAX.

UNIT -600-800V DRM Repetitive peak off-state -6001

800

V voltages

I T(RMS)RMS on-state current full sine wave;-8A

T mb ≤ 102 ?C I TSM

Non-repetitive peak full sine wave;on-state current

T j = 25 ?C prior to surge t = 20 ms -65A t = 16.7 ms -72A I 2t I 2t for fusing

t = 10 ms

-

21A 2s dI T /dt Repetitive rate of rise of I TM = 12 A; I G =

0.2 A;100A/μs on-state current after dI G /dt = 0.2 A/μs triggering

I GM Peak gate current -2A V GM Peak gate voltage -5V P GM Peak gate power -5W P G(AV)Average gate power over any 20 ms -0.5W period

T stg Storage temperature -40150?C T j

Operating junction -

125

C

temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/μs.

Philips Semiconductors Objective specification

Three quadrant triacs BTA208S series D, E and F

guaranteed commutation

THERMAL RESISTANCES

SYMBOL PARAMETER

MIN.TYP.MAX.UNIT R th j-mb Thermal resistance full cycle -- 2.0K/W junction to mounting base half cycle -- 2.4K/W R th j-a

Thermal resistance pcb (FR4) mounted; footprint as in Fig.14-

75

-

K/W

junction to ambient

STATIC CHARACTERISTICS

T j = 25 ?C unless otherwise stated SYMBOL PARAMETER CONDITIONS

MIN.

TYP.

MAX.UNIT

BTA208S-...D ...E ...F I GT

Gate trigger current 2

V D = 12 V; I T = 0.1 A T2+ G+--51025mA T2+ G---51025mA T2- G---51025mA I L

Latching current

V D = 12 V; I GT = 0.1 A T2+ G+--152025mA T2+ G---253040mA T2- G---253040mA I H Holding current V D = 12 V; I GT = 0.1 A --15

2530

mA V T On-state voltage I T = 10 A

- 1.3 1.65V V GT Gate trigger voltage V D = 12 V; I T = 0.1 A -0.7 1.5V V D = 400 V; I T = 0.1 A;0.250.4-V T j = 125 ?C I D Off-state leakage current

V D = V DRM(max);-0.1

0.5

mA T j = 125 ?C