FORMATION OF ELECTRODE PATTERN
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专利名称：FORMATION OF ELECTRODE PATTERN 发明人：GOTO TAKASHI
申请号：JP9730488
申请日：19880420
公开号：JPH01268135A
公开日：
19891025
专利内容由知识产权出版社提供
摘要：PURPOSE:To make it possible to perform a lift-off perfectly, by exposing mask patterns once to a plasma etching a atmosphere before a wet etching or the lift-off. CONSTITUTION:A masking material film 4 for a lift-off is attached onto a substrate 1. The masking material film 4 is exposed to light with a concentrated ion beam device for the formation of specific patterns. Next, a mask pattern 5 for a lift-off is formed by removing the unexposed part of the masking material through oxygen plasma etching. Then, electrode material 6 made of gold is coated onto the substrate 1 including the mask pattern 5 through resistance heating evaporation, and the mask pattern 5 is exposed to an oxygen plasma etching atmosphere. When the whole substrate 1 including the mask pattern 5 is dipped in acetone, and wet-etched with an ultrasonic wave introduced, the mask pattern 5 is removed, and the electrode material coats are lifted off. As the result, the lift-off is performed perfectly without producing any imperfect part.
申请人：SANYO ELECTRIC CO LTD
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