【MOS管】MDF9N50(韩国美格纳MagnaChip)
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Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(1) (1)
Symbol
RθJA RθJC
Rating
62.5 3.3
Unit
o
C/W
Oct 2008. Version 0.0
Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
MDF9N50 N-channel MOSFET 500V
Worldwide Sales Support Locations
U.S.A Sunnyvale Office 787 N. Mary Ave. Sunnyvale CA 94085 U.S.A Tel : 1-408-636-5200 Fax : 1-408-213-2450 E-Mail : americasales@ Chicago Office 2300 Barrington Road, Suite 330 Hoffman Estates, IL 60195 U.S.A Tel : 1-847-882-0951 Fax :1-847-882-0998 U.K Knyvett House The Causeway, Staines Middx, TW18 3BA,U.K. Tel : +44 (0) 1784-898-8000 Fax : +44 (0) 1784-895-115 E-Mail : europesales@ Japan Tokyo Office Shinbashi 2-chome MT bldg 4F 2-5-5 Shinbashi, Minato-ku Tokyo, 105-0004 Japan Tel : 81-3-3595-0632 Fax : 81-3-3595-0671 E-Mail : japansales@ Osaka Office 3F, Shin-Osaka MT-2 Bldg 3-5-36 Miyahara Yodogawa-Ku Osaka, 532-0003 Japan Tel : 81-6-6394-8224 Fax : 81-6-6394-8282 E-Mail : osakasales@ Taiwan R.O.C 2F, No.61, Chowize Street, Nei Hu Taipei,114 Taiwan R.O.C Tel : 886-2-2657-7898 Fax : 886-2-2657-8751 E-Mail : taiwansales@ China Hong Kong Office Office 03, 42/F, Office Tower Convention Plaza 1 Harbour Road, Wanchai, Hong Kong Tel : 852-2828-9700 Fax : 852-2802-8183 E-Mail : chinasales@ Shenzhen Office Room 1803, 18/F International Chamber of Commerce Tower Fuhua 3Road, Futian District ShenZhen, China Tel : 86-755-8831-5561 Fax : 86-755-8831-5565 Shanghai Office Ste 1902, 1 Huaihai Rd. (C) 20021 Shanghai, China Tel : 86-21-6373-5181 Fax : 86-21-6373-6640 Korea 891, Daechi-Dong, Kangnam-Gu Seoul, 135-738 Korea Tel : 82-2-6903-3451 Fax : 82-2-6903-3668 ~9 Email : koreasales@
500 3.0 -
0.72
5.0 1 100 0.85 -
V µA nA
-
S
Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf VGS = 10V, VDS = 250V, ID = 9.0A, RG = 25 (3) VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 400V, ID = 9.0A, VGS = 10V(3)
1
MagnaChip Semiconductor Ltd.
Preliminary – Subject to change without notice
MDF9N50 N-channel MOSFET 500V
Ordering Information
Part Number MDF9N50 Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free
Oct 2008. Version 0.0
2
MagnaChip Semiconductor Ltd.
Preliminary – Subject to change without notice
MDF9N50 N-channel MOSFET 500V
Physical Dimension 3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Oct 2008. Version 0.0
3
MagnaChip Semiconductor Ltd.
Preliminary – Subject to change without notice
-
8.0 2.5 3.0 800 4.0 90 25 30 20 40
nC
pF
ns
IS VSD trr Qrr IS = 9.0A, VGS = 0V IF = 9.0A, dl/dt = 100A/µs(3)
-
9.0
1.4
A V ns µC
160 1.0
VDD=50V, Rg =25
, Starting TJ=25°C
Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤9.0A, di/dt≤200A/us, VDD=50V, Rg =25 , Starting TJ=25°C 4. L=5.1mH, IAS=9.0A,
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25 C Derate above 25 C
DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller.
Preliminary – Subject to change without notice
MDF9N50 N-channel MOSFET 500V
MDF9N50
N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description
The MDF9N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N50 is suitable device for SMPS, high Speed switching and general purpose applications.
Symbol
Test Condition
Min
Typ
MS(th) IDSS IGSS RDS(ON) gfs
ID = 250µA, VGS = 0V VDS = VGS, ID = 250µA VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 4.5A VDS = 30V, ID = 4.5A
o o
Symbol
VDSS VGSS TC=25 C TC=100 C
o o
Rating
500 ±30 9.0 5.5 36 38 0.3 4.5 230 -55~150
Unit
V V A A A W W/ oC V/ns mJ
o
ID IDM PD Dv/dt EAS TJ, Tstg
C
Thermal Characteristics
Features
VDS = 500V ID = 9.0 RDS(ON) < 0.85 @ VGS = 10V @ VGS = 10V
Applications
Power Supply HID Lighting
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(1) (1)
Symbol
RθJA RθJC
Rating
62.5 3.3
Unit
o
C/W
Oct 2008. Version 0.0
Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
MDF9N50 N-channel MOSFET 500V
Worldwide Sales Support Locations
U.S.A Sunnyvale Office 787 N. Mary Ave. Sunnyvale CA 94085 U.S.A Tel : 1-408-636-5200 Fax : 1-408-213-2450 E-Mail : americasales@ Chicago Office 2300 Barrington Road, Suite 330 Hoffman Estates, IL 60195 U.S.A Tel : 1-847-882-0951 Fax :1-847-882-0998 U.K Knyvett House The Causeway, Staines Middx, TW18 3BA,U.K. Tel : +44 (0) 1784-898-8000 Fax : +44 (0) 1784-895-115 E-Mail : europesales@ Japan Tokyo Office Shinbashi 2-chome MT bldg 4F 2-5-5 Shinbashi, Minato-ku Tokyo, 105-0004 Japan Tel : 81-3-3595-0632 Fax : 81-3-3595-0671 E-Mail : japansales@ Osaka Office 3F, Shin-Osaka MT-2 Bldg 3-5-36 Miyahara Yodogawa-Ku Osaka, 532-0003 Japan Tel : 81-6-6394-8224 Fax : 81-6-6394-8282 E-Mail : osakasales@ Taiwan R.O.C 2F, No.61, Chowize Street, Nei Hu Taipei,114 Taiwan R.O.C Tel : 886-2-2657-7898 Fax : 886-2-2657-8751 E-Mail : taiwansales@ China Hong Kong Office Office 03, 42/F, Office Tower Convention Plaza 1 Harbour Road, Wanchai, Hong Kong Tel : 852-2828-9700 Fax : 852-2802-8183 E-Mail : chinasales@ Shenzhen Office Room 1803, 18/F International Chamber of Commerce Tower Fuhua 3Road, Futian District ShenZhen, China Tel : 86-755-8831-5561 Fax : 86-755-8831-5565 Shanghai Office Ste 1902, 1 Huaihai Rd. (C) 20021 Shanghai, China Tel : 86-21-6373-5181 Fax : 86-21-6373-6640 Korea 891, Daechi-Dong, Kangnam-Gu Seoul, 135-738 Korea Tel : 82-2-6903-3451 Fax : 82-2-6903-3668 ~9 Email : koreasales@
500 3.0 -
0.72
5.0 1 100 0.85 -
V µA nA
-
S
Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf VGS = 10V, VDS = 250V, ID = 9.0A, RG = 25 (3) VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 400V, ID = 9.0A, VGS = 10V(3)
1
MagnaChip Semiconductor Ltd.
Preliminary – Subject to change without notice
MDF9N50 N-channel MOSFET 500V
Ordering Information
Part Number MDF9N50 Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free
Oct 2008. Version 0.0
2
MagnaChip Semiconductor Ltd.
Preliminary – Subject to change without notice
MDF9N50 N-channel MOSFET 500V
Physical Dimension 3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Oct 2008. Version 0.0
3
MagnaChip Semiconductor Ltd.
Preliminary – Subject to change without notice
-
8.0 2.5 3.0 800 4.0 90 25 30 20 40
nC
pF
ns
IS VSD trr Qrr IS = 9.0A, VGS = 0V IF = 9.0A, dl/dt = 100A/µs(3)
-
9.0
1.4
A V ns µC
160 1.0
VDD=50V, Rg =25
, Starting TJ=25°C
Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤9.0A, di/dt≤200A/us, VDD=50V, Rg =25 , Starting TJ=25°C 4. L=5.1mH, IAS=9.0A,
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25 C Derate above 25 C
DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller.
Preliminary – Subject to change without notice
MDF9N50 N-channel MOSFET 500V
MDF9N50
N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description
The MDF9N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N50 is suitable device for SMPS, high Speed switching and general purpose applications.
Symbol
Test Condition
Min
Typ
MS(th) IDSS IGSS RDS(ON) gfs
ID = 250µA, VGS = 0V VDS = VGS, ID = 250µA VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 4.5A VDS = 30V, ID = 4.5A
o o
Symbol
VDSS VGSS TC=25 C TC=100 C
o o
Rating
500 ±30 9.0 5.5 36 38 0.3 4.5 230 -55~150
Unit
V V A A A W W/ oC V/ns mJ
o
ID IDM PD Dv/dt EAS TJ, Tstg
C
Thermal Characteristics
Features
VDS = 500V ID = 9.0 RDS(ON) < 0.85 @ VGS = 10V @ VGS = 10V
Applications
Power Supply HID Lighting
Absolute Maximum Ratings (Ta = 25oC)
Characteristics