decomposition is equipped with a InGaAs (P) quantu

专利名称：decomposition is equipped with a InGaAs (P) quantum well with indium InGaP barrier
layer was reduced laser
发明人：ジョンソン、ラルフ エイチ．,ウェイド、ジェローム ケイ．
申请号：JP2013558236
申请日：20120319
公开号：JP5802768B2
公开日：
20151104
专利内容由知识产权出版社提供
摘要： A method of preparing a VCSEL, this method, the active region on the opposite side of the step of growing the conductive area of t he first mirror on the first region, and the mirror region of the first conductive region of the first A step of growing the with the process of growing the quantum well barrier having In Ga P a (As), one or more of the GaAs (b) GaP, or GaAsP, Another is a process of growing the the process of growing the quantum well layer with a In Ga z As and one or more of the GaAs (d) GaP, or GaAsP, a quantum well barrier with In Ga P (As) is a process of growing a transition layer, and the process repeats over multiple cycles of the process up to (d) (e) (a) to It is possible to use MBE for, growing a conductive region of the second opposite side step including a process of growing, to the conducting region of the first over the active region. However, in the range of 0.77 to 0.50 to x, in the range from 1 0.7 to y, in the range of 0.7 to 0.99 to z.
申请人：フィニサー コーポレイション
地址：アメリカ合衆国 カリフォルニア州 ９４０８９ サニーベイル モフェット パーク ドライブ
１３８９
国籍：US
代理人：恩田 誠,恩田 博宣,本田 淳更多信息请下载全文后查看。