LMV321IDCKRG4中文资料

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Control4 IC Realtime 快速启动指南说明书

[ This note applies to all integration approved IC Realtimeequipment including recorders and cameras][ 2-Dec-16]ContentsMaterials needed (1)Overview (1)C4 Composer & IC Realtime Setup (2)Troubleshooting (5)Materials neededIC RealtimeDVR / NVR / IPC / IP PTZ Cat5/6 cable Laptop w/ a RJ-45 NIC port VGA/HDMI monitor OverviewThis aim of this guide is to cover the integration of IC Realtime equipment into the Control4 automated home using the Composer software. For general integration settings and troubleshooting techniques, please refer to theQsG_General-Integration-Guide.pdf.C4 Composer & IC Realtime SetupStep 1: First the home automation system requirements need to be considered. Either H.264 or MJPG are available from the IC Realtime equipment. As of this writing, Control4 is capable of utilizing either theH.264 or MJPG streams depending on the C4 hardware.With that in mind, the IC Realtime equipment will need to be setup first. The 2nd stream (or extra stream)is configured to use the preferred settings per format (H.264(~2Mb) or MJPG(D1, 5fps, ~2Mb)).For a more detailed setup on configuring the IC Realtime equipment and troubleshooting tips, please seethe QsG_General-Integration-Guide.pdfStep 2: Launch Composer. To add the IC Realtime driver set to the Composer library, select “Driver”then “Add or Update Driver …”. Navigate to the IC Realtime Control4 driver set and add each .c4i file (6 total).The Different Drivers:IC Realtime IP Camera (Fixed) – Video & snapshots for fixed IC Realtime IPCsIC Realtime IP Camera (PTZ) – Video, snapshot, and control for IC Realtime IPC PTZsIC Realtime Camera LED Switch – IR LED control for any IC Realtime cameraIC Realtime NVR Navigator – Control over an IC Realtime recorderIC Realtime NVR (Fixed) - Video & snapshots for fixed IC Realtime analog camerasIC Realtime NVR (PTZ) - Video, snapshot, and control for IC Realtime analog PTZ camerasStep 3: To confirm that the drivers are loaded, in the top right corner click on search. In the search box, type IC and hit enter. Right click on the driver and select info to find the version and date information.Step 4: Next, select the driver that corresponds to the IC Realtime equipment and drag it to the desired location in the “System Design” pane. You will be prompted to name the new driver instance.Then fill in the fields under the “Camera Properties” tab. We suggest setting the username / passwordfirst and the IP field last. After each field, you must click on the corresponding “Set” button.Step 5: Once the fields are set, click on the “Camera Test” tab. T he snapshot, MJPG, and H.264 URLs / streams are listed and testable.Step 6: The “Advanced Properties” section contains a collection of settings pulled from the camera/recorder with only a few exceptions. The PTZ speed/timing are locally storage and used to construct thecommand strings. Generally, we would suggest settings the different options in the camera’s /recorder’s interface.Notable fields include:“Load Optimized Defaults” –select “Load” and the cameras extra stream settings will be loaded withthe recommended settings for MJPG integration (D1 5fps 2Mb & optimized for MJPG).“H.264 Stream Selector” –Choose between “Main” or “Extra” for the H.264 Stream source.Troubleshooting∙To test the command strings (or variations), under the “Advanced Properties” section, set the “Debug” field to “Yes” and click “Set”. Now cli ck on the “Lua” tab. From here you can see the commands being sent and sen d commands to test.∙Ensure that the IP address, port #s, and username/password fields are correctly filled in with accurate information.∙Ensure that the Composer Software & drivers are up-to-date.∙If the main stream changes, ensure that the IC Realtime equipment meets the minimum firmware requirements for integration.∙If failing to get an image or getting a poor image, ensure that the IC Realtime ENCODE settings are correctly set.∙If experiencing control issues, ensure controls are functional at the IC Realtime device.For a more detailed setup on configuring the IC Realtime equipment and troubleshooting tips, please see theQsG_General-Integration-Guide.pdfIC Realtime LLC3050 N Andrews Avenue Extension | Pompano Beach, FL 33064 | (866) 997-9009Designs and specifications subject to change without notice. Copyright © 2015 IC Realtime, LLC. All rights reserved.。

TLE2144IDWRG4中文资料

0°C to 70°C −40°C to 105°C −55°C to 125°C
† The D packages are available taped and reeled. Add R suffix tCDR). TLE2142 AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C 750 µV 1200 µV 750 µV 1200 µV 750 µV SMALL OUTLINE† (D) TLE2142ACD TLE2142CD TLE2142AID TLE2142ID TLE2142AMD CHIP CARRIER (FK) — — — — TLE2142AMFK CERAMIC DIP (JG) — — — — TLE2142AMJG PLASTIC DIP (P) TLE2142ACP TLE2142CP TLC2142AIP TLC2142IP — TSSOP‡ (PW) — TLE2142CPWLE — — — CERAMIC FLAT PACK (U) — — — — TLE2142AMU TLE2142MU
TLE214x, TLE214xA EXCALIBUR LOW NOISE HIGH SPEED PRECISION OPERATIONAL AMPLIFIERS
TLE2141 AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C 500 µV 900 µV 500 µV 900 µV 500 µV 900 µV SMALL OUTLINE† (D) TLE2141ACD TLE2141CD TLE2141AID TLE2141ID — TLE2141MD CERAMIC DIP (JG) — — TLE2141AMJG TLE2141MJG PLASTIC DIP (P) TLE2141ACP TLE2141CP TLE2141AIP TLE2141IP — —

LM2904DR,LM2904DR,LM2904DR,LM2904DGKR,LM2904DGKR,LM2904DGKR,LM258DR,LM258DR, 规格书,Datasheet 资料

Low Input Bias and Offset Parameters:− Input Offset Voltage ...3mV TypA Versions ...2mV Typ− Input Offset Current ...2 nA Typ − Input Bias Current ...20 nA TypA Versions ...15 nA TypD Differential Input Voltage Range Equal to Maximum-Rated Supply Voltage ...32V (26 V for LM2904)D Open-Loop Differential Voltage Amplification ...100 V/mV Typ DInternal Frequency Compensationdescription/ordering information These devices consist of two independent,high-gain frequency-compensated operational amplifiers designed to operate from a singlesupply over a wide range of voltages. Operation from split supplies also is possible if the difference between the two supplies is 3 V to 32 V (3 V to 26 V for the LM2904), and V CC is at least 1.5 V more positive than the input common-mode voltage. The low supply-current drain is independent of the magnitude of the supplyvoltage.Applications include transducer amplifiers, dc amplification blocks, and all the conventional operational amplifier circuits that now can be implemented more easily in single-supply-voltage systems. For example,these devices can be operated directly from the standard 5-V supply used in digital systems and easily can provide the required interface electronics without additional ±5-V supplies.Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.PRODUCTION DATA information is current as of publication d ate.Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.3212019910111213456781817161514NC 2OUT NC 2IN−NCNC 1IN−NC 1IN+NCLM158, LM158A ...FK PACKAGE(TOP VIEW)N C 1O U T N C N CN CN C G N D N C C C +V 2I N +NC − No internal connectionOn products compliant to MIL-PRF-38535, all parameters are tested unless otherwise noted . On all other prod ucts, prod uction processing does not necessarily include testing of all parameters.ORDERING INFORMATION {T AV IO max AT 25°CMAX TESTED V CCPACKAGE }ORDERABLEPART NUMBER TOP-SIDE MARKING PDIP (P)Tube of 50LM358P LM358P Tube of 75LM358D Reel of 2500LM358DR SOIC (D)Reel of 2500LM358DRG3LM358SOP (PS)Reel of 2000LM358PSR L3587 mV30 VTube of 150LM358PW Reel of 2000LM358PWR °°CTSSOP (PW)Reel of 2000LM358PWRG3L3580C to 70MSOP/VSSOP (DGK)Reel of 2500LM358DGKR M5_§PDIP (P)Tube of 50LM358AP LM358AP SOIC (D)Tube of 75LM358AD 3mV 30V SOIC (D)Reel of 2500LM358ADR LM358A 3 mV30 VTSSOP (PW)Tube of 150LM358APW TSSOP (PW)Reel of 2000LM358APWR L358A MSOP/VSSOP (DGK)Reel of 2500LM358ADGKR M6_§PDIP (P)Tube of 50LM258P LM258P Tube of 75LM258D Reel of 2500LM258DR 5 mV30 VSOIC (D)Reel of 2500LM258DRG3LM258−25°°MSOP/VSSOP (DGK)Reel of 2500LM258DGKR M2_§25C to 85CPDIP (P)Tube of 50LM258AP LM258AP 3mV 30V SOIC (D)Tube of 75LM258AD 3 mV30 VSOIC (D)Reel of 2500LM258ADR LM258A MSOP/VSSOP (DGK)Reel of 2500LM258ADGKR M3_§PDIP (P)Tube of 50LM2904P LM2904P Tube of 75LM2904D Reel of 2500LM2904DR SOIC (D)Reel of 2500LM2904DRG3LM2904SOP (PS)Reel of 2000LM2904PSR L29047 mV26 VTube of 150LM2904PW −40°°Reel of 2000LM2904PWR 40C to 125CTSSOP (PW)Reel of 2000LM2904PWRG3L2904MSOP/VSSOP (DGK)Reel of 2500LM2904DGKR MB_§7mV 32V SOIC (D)Reel of 2500LM2904VQDR L2904V 7 mV 32 V TSSOP (PW)Reel of 2000LM2904VQPWR L2904V 2mV 32V SOIC (D)Reel of 2500LM2904AVQDR L2904AV 2 mV 32 V TSSOP (PW)Reel of 2000LM2904AVQPWR L2904AV 5mV 30V CDIP (JG)Tube of 50LM158JG LM158JG 55°C to 125°C5 mV30 V LCCC (FK)Tube of 55LM158FK LM158FK −55C to 1252mV 30V CDIP (JG)Tube of 50LM158AJG LM158AJG 2 mV30 VLCCC (FK)Tube of 55LM158AFKLM158AFK†For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at .‡Package drawings, thermal data, and symbolization are available at /packaging.§The actual top-side marking has one additional character that designates the wafer fab/assembly site.symbol (each amplifier)IN+IN−OUTschematic (each amplifier)V CC+OUTGND (or V CC−)IN−IN+Epi-FET Diodes Resistors Transistors CapacitorsCOMPONENT COUNT 127512absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†LM158, LM158ALM258, LM258ALM358, LM358ALM2904VLM2904UNITSupply voltage, V CC (see Note 1)±16 or 32±13 or 26V Differential input voltage, V ID (see Note 2)±32±26V Input voltage, V I (either input)−0.3 to 32−0.3 to 26V Duration of output short circuit (one amplifier) to groundat (or below) 25°C free-air temperature (V CC≤ 15 V) (see Note 3)Unlimited UnlimitedD package9797DGK package172172q P package8585°C/W Package thermal impedance, JA (see Notes 4 and 5)PS package9595PW package149149Package thermal impedance q(see Notes6and7)FK package 5.61C/WPackage thermal impedance, JC (see Notes 6 and 7)JG package14.5°LM158, LM158A−55 to 125Operating free air temperature range T LM258, LM258A−25 to 85Operating free-air temperature range, T ALM358, LM358A0 to 70°CLM2904−40 to 125−40 to 125 Operating virtual junction temperature, T J150150°C Case temperature for 60 seconds FK package260°C Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds JG package300300°C Storage temperature range, T stg−65 to 150−65 to 150°C†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.NOTES: 1.All voltage values, except differential voltages and V CC specified for measurement of I OS, are with respect to the network ground terminal.2.Differential voltages are at IN+ with respect to IN−.3.Short circuits from outputs to V CC can cause excessive heating and eventual destruction.4.Maximum power dissipation is a function of T J(max), q JA, and T A. The maximum allowable power dissipation at any allowableambient temperature is P D = (T J(max) − T A)/q JA. Operating at the absolute maximum T J of 150°C can affect reliability.5.The package thermal impedance is calculated in accordance with JESD 51-7.6.Maximum power dissipation is a function of T J(max), q JC, and T C. The maximum allowable power dissipation at any allowable casetemperature is P D = (T J(max) − T C)/q JC. Operating at the absolute maximum T J of 150°C can affect reliability.7.The package thermal impedance is calculated in accordance with MIL-STD-883.electrical characteristics at specified free-air temperature, V CC = 5 V (unless otherwise noted)†‡LM158LM258LM358PARAMETERTEST CONDITIONS T A MINTYP §MAXMINTYP §MAXUNITInput offset voltage V CC = 5 V to MAX,V 25°C 3537V IOInput offset voltage V IC = V ICR(min),V O = 1.4 VFull range 79mV a V IOAverage temperature coefficient ofinput offset voltage Full range 77µV/°CInput offset current =14V25°C 230250I IO Input offset current V O = 1.4 V Full range 100150nA a I IOAverage temperature coefficient ofinput offset current Full range 1010pA/°CInput bias current =14V 25°C −20−150−20−250I IBInput bias currentV O = 1.4 V Full range −300−500nACCommon-mode=5V to MAX 25°C0 to V CC − 1.50 to V CC − 1.5V ICR Common mode input voltage rangeV CC = 5 V to MAXFull range0 to V CC − 20 to V CC − 2VR L ≥ 2 k Ω25°C V CC − 1.5V CC − 1.5High-levelR L ≥ 10 k Ω25°C V OHHigh level output voltage =MAX R L = 2 k ΩFull range 2626Vp g V CC = MAX R L ≥ 10 k ΩFull range 27282728V OL Low-leveloutput voltage R L ≤ 10 k ΩFull range 520520mVLarge-signal V CC = 15 V, 1V to 11V 25°C 5010025100A VD differentialvoltage amplification V O = 1 V to 11 V,R L ≥2 k ΩFull range 2515V/mV CMRR Common-mode rejection ratio V CC = 5 V to MAX,V IC = V ICR(min)25°C 70806580dB k SVR Supply-voltage rejection ratio (∆V DD /∆V IO )V CC = 5 V to MAX 25°C 6510065100dB V O1/V O2Crosstalk attenuationf = 1 kHz to 20 kHz 25°C 120120dBV CC = 15 V,1V 25°C −20−30−20−30Output current V ID = 1 V,V O = 0Source Full range −10−10I OOutput currentV CC = 15 V,1V25°C 10201020mAV ID = −1 V,V O = 15 VSink Full range 55I O Output current V ID = −1 V, V O = 200 mV 25°C 12301230µA I OS Short-circuit output current V CC at 5 V, GND at −5 V,V O = 025°C ±40±60±40±60mASupply current V O = 2.5 V, No load Full range 0.7 1.20.7 1.2I CCSupply current (two amplifiers)V CC = MAX, V O = 0.5 V,No loadFull range1212mA All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified. MAX V CC for testing purposes is 26 V for the LM2904 and 30 V for others.‡Full range is −55°C to 125°C for LM158, −25°C to 85°C for LM258, 0°C to 70°C for LM358, and −40°C to 125°C for LM2904.§All typical values are at T A= 25°C.electrical characteristics at specified free-air temperature, V CC = 5 V (unless otherwise noted)TEST CONDITIONS LM2904PARAMETERTEST CONDITIONS †T A ‡MINTYP §MAXUNITNon A devices 25°C 37Input offset voltage V CC = 5 V to MAX,V Non-A devices Full range 10V IOInput offset voltageV IC = V ICR(min), A suffix devices 25°C 12mVV O = 1.4 VA-suffix devicesFull range 4a VIOAverage temperature coefficient of input offset voltageFull range7µV/°CNon V device 25°C 250Input offset current 14VNon-V deviceFull range 300I IOInput offset currentV O = 1.4 V V suffix device 25°C 250nAV-suffix deviceFull range 150a IIOAverage temperature coefficientof input offset current Full range 10pA/°C Input bias current 14V 25°C −20−250I IBInput bias currentV O = 1.4 VFull range −500nACommon-mode input voltage 5V to MAX 25°C0 to V CC − 1.5V ICRCommon mode input voltage rangeV CC = 5 V to MAXFull range0 to V CC − 2VR L ≥ 10 k Ω25°CV CC − 1.5V R L = 2 k ΩFull range 22V High-level output voltage CC = MAX,Non-V device R L ≥ 10 k ΩFull range 2324VOHHigh level output voltageV R L = 2 k ΩFull range 26CC = MAX,V-suffix deviceR L ≥ 10 k ΩFull range 2728V OL Low-level output voltage R L ≤ 10 k ΩFull range 520mV Large-signal differential V 25°C 25100A VD Large signal differential voltage amplificationCC = 15 V, V O = 1 V to 11 V,R L ≥2 k ΩFull range 15V/mV Common mode rejection ratio Non-V device 25°C 5080CMRR Common-mode rejection ratio V CC = 5 V to MAX,V IC = V ICR(min)V-suffix device25°C 6580dB k SVR Supply-voltage rejection ratio (∆V DD /∆V IO )V CC = 5 V to MAX 25°C 65100dB V O1/V O2Crosstalk attenuationf = 1 kHz to 20 kHz 25°C120dB 25°C −20−30mA V CC = 15 V,V ID = 1 V, V O = 0SourceFull range −10mA Output current V CC = 15 V,1V 25°C1020mA I OOutput currentV ID = −1 V,V O = 15 V SinkFull range 5mA V = −1 V,Non-V device 25°C 30ID = 1 V,V O = 200 mVV-suffix device25°C 1240µA I OS Short-circuit output current V CC at 5 V, GND at −5 V, V O = 025°C ±40±60mA Supply current (two amplifiers)V O = 2.5 V, No loadFull range 0.7 1.2I CCSupply current (two amplifiers)V CC = MAX, V O = 0.5 V, No loadFull range12mA†All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified. MAX V CC fortesting purposes is 26 V for the LM2904, 32 V for the LM2904V, and 30 V for others.‡Full range is −55°C to 125°C for LM158, −25°C to 85°C for LM258, 0°C to 70°C for LM358, and −40°C to 125°C for LM2904.§All typical values are at T A= 25°C.electrical characteristics at specified free-air temperature, V CC = 5 V (unless otherwise noted)TEST CONDITIONS LM158A LM258APARAMETER TEST CONDITIONS†T A‡MIN TYP§MAX MIN TYP§MAXUNITInput offset voltage V CC = 5 V to 30 V,V25°C223V IO Input offset voltage V IC = V ICR(min),V O = 1.4 V Full range44mVa VIO Averagetemperaturecoefficient ofinput offset voltageFull range715*715µV/°C Input offset current=14V25°C210215I IO Input offset current V O = 1.4 VFull range3030nAa IIO Averagetemperaturecoefficient ofinput offset currentFull range1020010200pA/°C Input bias current=14V25°C−15−50−15−80I IB Input bias current V O = 1.4 VFull range−100−100nAC Common-mode=30V25°C0 toV CC − 1.50 toV CC − 1.5V ICR Common modeinput voltage rangeV CC = 30 VFull range0 toV CC − 20 toV CC − 2V High levelR L≥ 2 kΩ25°C V CC − 1.5V CC − 1.5High-leveloutput voltage V=30VR L= 2 kΩFull range2626V OH output voltageCC = 30 V RL≥ 10 kΩFull range27282728VV OL Low-leveloutput voltageR L≤ 10 kΩFull range520520mV Large-signal V CC = 15 V,1V to11V25°C5010050100A VD differentialvoltage amplification V O = 1 V to 11 V,R L≥2 kΩFull range2525V/mVCMRR Common-moderejection ratio25°C70807080dBk SVR Supply-voltagerejection ratio(∆V DD/∆V IO)25°C6510065100dBV O1/V O2Crosstalkattenuationf = 1 kHz to 20 kHz25°C120120dBV CC = 15 V,1V25°C−20−30−60−20−30−60V ID = 1 V,V O = 0SourceFull range−10−10I O Output current V CC = 15 V,1V 25°C10201020mAV ID = −1 V, V O = 15SinkFull range55V ID = −1 V, V O = 200 mV25°C12301230µAI OS Short-circuit outputcurrentV CC at 5 V, GND at −5 V,V O = 025°C±40±60±40±60mA Supply current(twoV O = 2.5 V, No load Full range0.7 1.20.7 1.2I CC Supply current (twoamplifiers)V CC = MAX, V O = 0.5 V,No loadFull range1212mA*On products compliant to MIL-PRF-38535, this parameter is not production tested.†All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified. MAX V CC for testing purposes is 26 V for LM2904 and 30 V for others.‡Full range is −55°C to 125°C for LM158A, −25°C to 85°C for LM258A, and 0°C to 70°C for LM358A.§All typical values are at T A = 25°C.electrical characteristics at specified free-air temperature, V CC = 5 V (unless otherwise noted)TEST CONDITIONS LM358A PARAMETERTEST CONDITIONS †T A ‡MINTYP §MAXUNIT Input offset voltage V 25°C 23V IO Input offset voltageCC = 5 V to 30 V,V IC = V ICR(min), V O = 1.4 VFull range 5mV a V IOAverage temperature coefficient of input offset voltage Full range720µV/°C Input offset current 14V25°C 230I IO Input offset currentV O = 1.4 V Full range 75nA a IIO Average temperature coefficient of input offset current Full range10300pA/°C Input bias current 14V25°C −15−100I IB Input bias currentV O = 1.4 V Full range −200nACommon mode input voltage range V 30V25°C0 to V CC − 1.5V ICRCommon-mode input voltage rangeCC = 30 V Full range0 to V CC − 2VR L ≥ 2 k Ω25°CV CC − 1.5High-level output voltage 30V R L = 2 k ΩFull range 26V OH High level output voltage V CC = 30 V R L ≥ 10 k ΩFull range 2728V V OL Low-level output voltage R L ≤ 10 k ΩFull range 520mV Large-signal differential V 25°C 25100A VD Large signal differential voltage amplificationCC = 15 V, V O = 1 V to 11 V,R L ≥2 k ΩFull range 15V/mV CMRR Common-mode rejection ratio 25°C 6580dB k SVR Supply-voltage rejection ratio (∆V DD /∆V IO )25°C65100dB V O1/V O2Crosstalk attenuationf = 1 kHz to 20 kHz 25°C 120dBV CC = 15 V,1V 25°C −20−30−60V ID = 1 V,V O = 0SourceFull range −10I OOutput currentV CC = 15 V,1V 25°C1020mAV ID = −1 V,V O = 15 VSinkFull range 5V ID = −1 V, V O = 200 mV25°C 30µA I OS Short-circuit output current V CC at 5 V, GND at −5 V, V O = 025°C ±40±60mA Supply current (two amplifiers)V O = 2.5 V, No loadFull range 0.7 1.2I CCSupply current (two amplifiers)V CC = MAX, V O = 0.5 V, No loadFull range12mA†All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified. MAX V CC fortesting purposes is 26 V for LM2904 and 30 V for others.‡Full range is −55°C to 125°C for LM158A, −25°C to 85°C for LM258A, and 0°C to 70°C for LM358A.§All typical values are at T A= 25°C.operating conditions, V CC = ±15 V, T A = 25°CPARAMETER TEST CONDITIONS TYP UNITSR Slew rate at unity gain R L= 1 MΩ, C L= 30 pF, V I= ±10 V(see Figure 1)0.3V/µs B1Unity-gain bandwidth R L= 1 MΩ, C L= 20 pF (see Figure 1)0.7MHz V n Equivalent input noise voltageR S= 100 Ω, V I= 0 V, f = 1 kHz(see Figure 2)40nV/√HzV OFigure 1. Unity-Gain AmplifierV O900 ΩFigure 2. Noise-Test Circuit23-May-2012 PACKAGING INFORMATIONOrderable Device Status (1)Package Type PackageDrawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)Samples(Requires Login)5962-87710012A ACTIVE LCCC FK201TBD Call TI Call TI5962-8771001PA ACTIVE CDIP JG81TBD Call TI Call TI5962-87710022A ACTIVE LCCC FK201TBD Call TI Call TI5962-8771002PA ACTIVE CDIP JG81TBD Call TI Call TILM158AFKB ACTIVE LCCC FK201TBD POST-PLATE N / A for Pkg Type LM158AJG ACTIVE CDIP JG81TBD A42N / A for Pkg Type LM158AJGB ACTIVE CDIP JG81TBD A42N / A for Pkg Type LM158FKB ACTIVE LCCC FK201TBD POST-PLATE N / A for Pkg Type LM158JG ACTIVE CDIP JG81TBD A42N / A for Pkg Type LM158JGB ACTIVE CDIP JG81TBD A42N / A for Pkg Type LM258AD ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258ADE4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258ADG4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258ADGKR ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258ADGKRG4ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258ADR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258ADRE4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258ADRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM258AP ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM258APE4ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM258D ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258DE4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM23-May-2012Orderable Device Status (1)Package Type PackageDrawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)Samples(Requires Login)LM258DG4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258DGKR ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258DGKRG4ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258DR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258DRE4ACTIVE SOIC D8Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM258DRG3ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU SN Level-1-260C-UNLIMLM258DRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM258P ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM258PE4ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM2904AVQDR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904AVQDRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904AVQPWR ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904AVQPWRG4ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904D ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904DE4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904DG4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904DGKR ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904DGKRG4ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904DR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM23-May-2012Orderable Device Status (1)Package Type PackageDrawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)Samples(Requires Login)LM2904DRE4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904DRG3ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU SN Level-1-260C-UNLIMLM2904DRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2904P ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM2904PE4ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM2904PSR ACTIVE SO PS82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904PSRE4ACTIVE SO PS82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904PSRG4ACTIVE SO PS82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904PW ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904PWE4ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904PWG4ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2904PWLE OBSOLETE TSSOP PW8TBD Call TI Call TILM2904PWR ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904PWRG3ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU SN Level-1-260C-UNLIM LM2904QD OBSOLETE SOIC D8TBD Call TI Call TILM2904QDR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904QDRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2904QP OBSOLETE PDIP P8TBD Call TI Call TILM2904VQDR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904VQDRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM23-May-2012Orderable Device Status (1)Package Type PackageDrawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)Samples(Requires Login)LM2904VQPWR ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM2904VQPWRG4ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358AD ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358ADE4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358ADG4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358ADGKR ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358ADGKRG4ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358ADR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358ADRE4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358ADRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM358AP ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM358APE4ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM358APW ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358APWE4ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358APWG4ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358APWR ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358APWRE4ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358APWRG4ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358D ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM23-May-2012Orderable Device Status (1)Package Type PackageDrawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)Samples(Requires Login)LM358DE4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358DG4ACTIVE SOIC D875Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358DGKR ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358DGKRG4ACTIVE MSOP DGK82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358DR ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358DRE4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358DRG3ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU SN Level-1-260C-UNLIMLM358DRG4ACTIVE SOIC D82500Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM358P ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM358PE3ACTIVE PDIP P850Pb-Free (RoHS)CU SN N / A for Pkg Type LM358PE4ACTIVE PDIP P850Pb-Free (RoHS)CU NIPDAU N / A for Pkg Type LM358PSLE OBSOLETE SO PS8TBD Call TI Call TILM358PSR ACTIVE SO PS82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358PSRE4ACTIVE SO PS82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358PSRG4ACTIVE SO PS82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358PW ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358PWE4ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358PWG4ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM358PWLE OBSOLETE TSSOP PW8TBD Call TI Call TILM358PWR ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM23-May-2012Orderable Device Status (1)Package Type PackageDrawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)Samples(Requires Login)LM358PWRE4ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM358PWRG3ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU SN Level-1-260C-UNLIMLM358PWRG4ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C-UNLIM(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check /productcontent for the latest availability information and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.OTHER QUALIFIED VERSIONS OF LM258A, LM2904 :•Automotive: LM2904-Q1•Enhanced Product: LM258A-EP。

LM124DRG4资料

PACKAGING INFORMATIONOrderableDevice Status (1)Package Type Package DrawingPins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)5962-7704301VCAACTIVE CDIP J 141TBD A42SNPB N /A for Pkg Type 77043012A ACTIVE LCCC FK 201TBD POST-PLATE N /A for Pkg Type7704301CA ACTIVE CDIP J 141TBD A42SNPB N /A for Pkg Type 7704301DA ACTIVE CFP W 141TBD A42SNPB N /A for Pkg Type 77043022A ACTIVE LCCC FK 201TBD POST-PLATE N /A for Pkg Type7704302CA ACTIVE CDIP J 141TBD A42SNPB N /A for Pkg Type JM38510/11005BCAACTIVE CDIP J 141TBD A42SNPB N /A for Pkg Type LM124ADR OBSOLETE SOIC D 14TBD Call TI Call TILM124AFKB ACTIVE LCCC FK 201TBD POST-PLATE N /A for Pkg TypeLM124AJ ACTIVE CDIP J 141TBD A42SNPB N /A for Pkg Type LM124AJB ACTIVE CDIP J 141TBD A42SNPB N /A for Pkg Type LM124D ACTIVE SOIC D 1450TBD CU NIPDAU Level-3-245C-168HR LM124DG4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM124DR ACTIVE SOIC D 142500TBDCU NIPDAU Level-3-245C-168HR LM124DRG4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIMLM124FKB ACTIVE LCCC FK 201TBD POST-PLATE N /A for Pkg Type LM124J ACTIVE CDIP J 141TBD A42SNPB N /A for Pkg Type LM124JB ACTIVE CDIP J 141TBD A42SNPB N /A for Pkg Type LM124N OBSOLETE PDIP N 14TBD Call TI Call TILM124W ACTIVE CFP W 141TBD A42SNPB N /A for Pkg Type LM124WB ACTIVE CFP W 141TBD A42SNPB N /A for Pkg Type LM224AD ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224ADE4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224ADG4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224ADR ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224ADRE4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224ADRG4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224AN ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type LM224ANE4ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type LM224D ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224DE4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224DG4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224DRACTIVESOICD142500Green (RoHS &CU NIPDAULevel-1-260C-UNLIMPACKAGE OPTION ADDENDUM9-Oct-2007Addendum-Page 1OrderableDeviceStatus (1)Package Type Package DrawingPins Package QtyEco Plan (2)Lead/Ball FinishMSL Peak Temp (3)no Sb/Br)LM224DRE4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224DRG4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224KAD ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224KADE4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224KADG4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224KADR ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224KADRE4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224KADRG4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224KAN ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type LM224KANE4ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type LM224KD ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224KDE4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224KDG4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224KDR ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224KDRE4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224KDRG4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM224KN ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type LM224KNE4ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type LM224N ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type LM224NE4ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type LM2902D ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902DE4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902DG4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902DR ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902DRE4ACTIVESOICD142500Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIM9-Oct-2007OrderableDevice Status (1)Package Type Package DrawingPins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)LM2902DRG4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KAVQDR NRND SOIC D 142500Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM LM2902KAVQDRG4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KAVQPWR ACTIVE TSSOP PW 142000TBDCU NIPDAU Level-1-250C-UNLIM LM2902KAVQPWRG4ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KD ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KDB ACTIVE SSOP DB 1480Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KDBE4ACTIVE SSOP DB 1480Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KDBG4ACTIVE SSOP DB 1480Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KDBR ACTIVE SSOP DB 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KDBRE4ACTIVE SSOP DB 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KDBRG4ACTIVE SSOP DB 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KDE4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KDG4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KDR ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KDRE4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KDRG4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KN ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type LM2902KNE4ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type LM2902KNSR ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KNSRE4ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KNSRG4ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KPW ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KPWE4ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KPWG4ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KPWRACTIVETSSOPPW142000Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIM9-Oct-2007OrderableDevice Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)LM2902KPWRE4ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KPWRG4ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KVQDR NRND SOIC D 142500Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM LM2902KVQDRG4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902KVQPWR ACTIVE TSSOP PW 142000TBDCU NIPDAU Level-1-250C-UNLIM LM2902KVQPWRG4ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902N ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type LM2902NE4ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type LM2902NSR ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902NSRG4ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902PW ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902PWE4ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902PWG4ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902PWLE OBSOLETE TSSOP PW 14TBDCall TI Call TILM2902PWR ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902PWRE4ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902PWRG4ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM2902QN OBSOLETE PDIP N 14TBD Call TI Call TILM324AD ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324ADBLE OBSOLETE SSOP DB 14TBDCall TI Call TILM324ADBR ACTIVE SSOP DB 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324ADBRE4ACTIVE SSOP DB 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324ADBRG4ACTIVE SSOP DB 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324ADE4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324ADG4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324ADR ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324ADRE4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324ADRG4ACTIVESOICD142500Green (RoHS &CU NIPDAULevel-1-260C-UNLIM9-Oct-2007Orderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)no Sb/Br)LM324AN ACTIVE PDIP N1425Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeLM324ANE4ACTIVE PDIP N1425Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeLM324ANSR ACTIVE SO NS142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324ANSRE4ACTIVE SO NS142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324ANSRG4ACTIVE SO NS142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324APW ACTIVE TSSOP PW1490Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324APWE4ACTIVE TSSOP PW1490Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324APWG4ACTIVE TSSOP PW1490Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324APWLE OBSOLETE TSSOP PW14TBD Call TI Call TILM324APWR ACTIVE TSSOP PW142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324APWRE4ACTIVE TSSOP PW142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324APWRG4ACTIVE TSSOP PW142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324D ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324DE4ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324DG4ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324DR ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324DRE4ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324DRG4ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324KAD ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324KADE4ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324KADG4ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324KADR ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324KADRE4ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324KADRG4ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324KAN ACTIVE PDIP N1425Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeLM324KANE4ACTIVE PDIP N1425Pb-Free CU NIPDAU N/A for Pkg Type 9-Oct-2007OrderableDeviceStatus (1)Package Type Package Drawing Pins Package QtyEco Plan (2)Lead/Ball FinishMSL Peak Temp (3)(RoHS)LM324KANS PREVIEW SO NS 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KANSR ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KANSRE4ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KANSRG4ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KAPW ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KAPWE4ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KAPWG4ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KAPWR ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KAPWRE4ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KAPWRG4ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KD ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KDE4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KDG4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KDR ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KDRE4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KDRG4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KN ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type LM324KNE4ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type LM324KNS PREVIEW SO NS 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KNSR ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KNSRE4ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KNSRG4ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KPW ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KPWE4ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324KPWG4ACTIVETSSOPPW1490Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIM9-Oct-2007Orderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)LM324KPWR ACTIVE TSSOP PW142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324KPWRE4ACTIVE TSSOP PW142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324KPWRG4ACTIVE TSSOP PW142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324N ACTIVE PDIP N1425Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeLM324NE4ACTIVE PDIP N1425Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeLM324NSR ACTIVE SO NS142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324NSRE4ACTIVE SO NS142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324NSRG4ACTIVE SO NS142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324PW ACTIVE TSSOP PW1490Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324PWE4ACTIVE TSSOP PW1490Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324PWG4ACTIVE TSSOP PW1490Green(RoHS&no Sb/Br)CU NIPDAULevel-1-260C-UNLIMLM324PWLE OBSOLETE TSSOP PW14TBD Call TI Call TILM324PWR ACTIVE TSSOP PW142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324PWRE4ACTIVE TSSOP PW142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLM324PWRG4ACTIVE TSSOP PW142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LM324Y OBSOLETE DIESALE Y0TBD Call TI Call TI(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-The planned eco-friendly classification:Pb-Free(RoHS),Pb-Free(RoHS Exempt),or Green(RoHS&no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all6substances,including the requirement that lead not exceed0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free(RoHS Exempt):This component has a RoHS exemption for either1)lead-based flip-chip solder bumps used between the die and package,or2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free(RoHS compatible)as defined above.Green(RoHS&no Sb/Br):TI defines"Green"to mean Pb-Free(RoHS compatible),and free of Bromine(Br)and Antimony(Sb)based flame retardants(Br or Sb do not exceed0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.9-Oct-2007Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annualbasis.9-Oct-2007TAPE AND REEL BOXINFORMATIONDevicePackage Pins SiteReel Diameter (mm)Reel Width (mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant LM224ADR D 14SITE 4133016 6.59.0 2.1816Q1LM224DR D 14SITE 4133016 6.59.0 2.1816Q1LM224KADR D 14SITE 4133016 6.59.0 2.1816Q1LM224KDR D 14SITE 4133016 6.59.0 2.1816Q1LM2902DR D 14SITE 2733016 6.59.0 2.1816Q1LM2902DR D 14SITE 4133016 6.59.0 2.1816Q1LM2902KDBR DB 14SITE 41330168.2 6.6 2.51216Q1LM2902KDR D 14SITE 4133016 6.59.0 2.1816Q1LM2902KNSR NS 14SITE 41330168.210.5 2.51216Q1LM2902KPWR PW 14SITE 41330127.0 5.6 1.6812Q1LM2902NSR NS 14SITE 41330168.210.5 2.51216Q1LM2902PWR PW 14SITE 41330127.0 5.6 1.6812Q1LM324ADBR DB 14SITE 41330168.2 6.6 2.51216Q1LM324ADR D 14SITE 4133016 6.59.0 2.1816Q1LM324ANSR NS 14SITE 41330168.210.5 2.51216Q1LM324APWR PW 14SITE 41330127.0 5.6 1.6812Q1LM324DR D 14SITE 2733016 6.59.0 2.1816Q1LM324DR D 14SITE 4133016 6.59.0 2.1816Q1LM324KADRD14SITE 41330166.59.02.1816Q14-Oct-2007DevicePackage Pins SiteReel Diameter (mm)Reel Width (mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant LM324KANSR NS 14SITE 41330168.210.5 2.51216Q1LM324KAPWR PW 14SITE 41330127.0 5.6 1.6812Q1LM324KDR D 14SITE 4133016 6.59.0 2.1816Q1LM324KNSR NS 14SITE 41330168.210.5 2.51216Q1LM324KPWR PW 14SITE 41330127.0 5.6 1.6812Q1LM324NSR NS 14SITE 41330168.210.52.51216Q1LM324PWRPW14SITE 41330127.05.61.6812Q1Device PackagePins Site Length (mm)Width (mm)Height (mm)LM224ADR D 14SITE 41346.0346.033.0LM224DR D 14SITE 41346.0346.033.0LM224KADR D 14SITE 41346.0346.033.0LM224KDR D 14SITE 41346.0346.033.0LM2902DR D 14SITE 27342.9336.628.58LM2902DR D 14SITE 41346.0346.033.0LM2902KDBR DB 14SITE 41346.0346.033.0LM2902KDR D 14SITE 41346.0346.033.0LM2902KNSR NS 14SITE 41346.0346.033.0LM2902KPWRPW14SITE 41346.0346.029.04-Oct-2007DevicePackage Pins Site Length (mm)Width (mm)Height (mm)LM2902NSR NS 14SITE 41346.0346.033.0LM2902PWR PW 14SITE 41346.0346.029.0LM324ADBR DB 14SITE 41346.0346.033.0LM324ADR D 14SITE 41346.0346.033.0LM324ANSR NS 14SITE 41346.0346.033.0LM324APWR PW 14SITE 41346.0346.029.0LM324DR D 14SITE 27342.9336.628.58LM324DR D 14SITE 41346.0346.033.0LM324KADR D 14SITE 41346.0346.033.0LM324KANSR NS 14SITE 41346.0346.033.0LM324KAPWR PW 14SITE 41346.0346.029.0LM324KDR D 14SITE 41346.0346.033.0LM324KNSR NS 14SITE 41346.0346.033.0LM324KPWR PW 14SITE 41346.0346.029.0LM324NSR NS 14SITE 41346.0346.033.0LM324PWRPW14SITE 41346.0346.029.04-Oct-2007IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries(TI)reserve the right to make corrections,modifications,enhancements, improvements,and other changes to its products and services at any time and to discontinue any product or service without notice. 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模拟器件lc2mos精密四路单刀双掷开关adg411 adg412 adg413说明书

FUNCTIONAL BLOCK DIAGRAMSIN1IN2IN3IN4S1D1S2D2S3D3S4D4ADG411IN1IN2IN3IN4S1D1S2D2S3D3S4D4ADG412IN1IN2IN3IN4S1D1S2D2S3D3S4D4ADG413SWITCHES SHOWN FOR A LOGIC "1" INPUTREV.AInformation furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication oraLC 2MOSPrecision Quad SPST Switches ADG411/ADG412/ADG413One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.Tel: 781/329-4700World Wide Web Site: FEATURES44 V Supply Maximum Ratings ؎15 V Analog Signal Range Low On Resistance (<35 ⍀)Ultralow Power Dissipation (35 ␮W)Fast Switching Times t ON <175 ns t OFF <145 nsTTL/CMOS CompatiblePlug-In Replacement for DG411/DG412/DG413APPLICATIONSAudio and Video Switching Automatic Test Equipment Precision Data Acquisition Battery Powered Systems Sample Hold Systems Communication SystemsPRODUCT HIGHLIGHTS1.Extended Signal RangeThe ADG411, ADG412 and ADG413 are fabricated on an enhanced LC 2MOS, giving an increased signal range which extends fully to the supply rails.2.Ultralow Power Dissipation 3.Low R ON4.Break-Before-Make SwitchingThis prevents channel shorting when the switches are configured as a multiplexer.5.Single Supply OperationFor applications where the analog signal is unipolar, the ADG411, ADG412 and ADG413 can be operated from a single rail power supply. The parts are fully specified with a single +12 V power supply and will remain functional with single supplies as low as +5 V.GENERAL DESCRIPTIONThe ADG411, ADG412 and ADG413 are monolithic CMOS devices comprising four independently selectable switches. They are designed on an enhanced LC 2MOS process which provides low power dissipation yet gives high switching speed and low on resistance.The on resistance profile is very flat over the full analog input range ensuring excellent linearity and low distortion whenswitching audio signals. Fast switching speed coupled with high signal bandwidth also make the parts suitable for video signal switching. CMOS construction ensures ultralow power dissipa-tion making the parts ideally suited for portable and battery powered instruments.The ADG411, ADG412 and ADG413 contain four indepen-dent SPST switches. The ADG411 and ADG412 differ only in that the digital control logic is inverted. The ADG411 switches are turned on with a logic low on the appropriate control input,while a logic high is required for the ADG412. The ADG413has two switches with digital control logic similar to that of the ADG411 while the logic is inverted on the other two switches.Each switch conducts equally well in both directions when ON and each has an input signal range that extends to the supplies.In the OFF condition, signal levels up to the supplies are blocked. All switches exhibit break-before-make switching ac-tion for use in multiplexer applications. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.查询ADG411供应商捷多邦，专业PCB打样工厂，24小时加急出货ADG411/ADG412/ADG413–SPECIFICATIONS1Dual Supply(V DD = +15 V ؎ 10%, V SS = –15 V ؎ 10%, V L = +5 V ؎ 10%, GND = 0 V, unless otherwise noted)B Version T Version–40؇C to–55؇C toParameter+25؇C+85؇C+25؇C+125؇C Units Test Conditions/Comments ANALOG SWITCHAnalog Signal Range V DD to V SS V DD to V SS VR ON2525Ω typ V D = ±8.5 V, I S = –10 mA;35453545Ω max V DD = +13.5 V, V SS = –13.5 V LEAKAGE CURRENTS V DD = +16.5 V, V SS = –16.5 V Source OFF Leakage I S (OFF)±0.1±0.1nA typ V D = ±15.5 V, V S = ϯ15.5 V;±0.25±5±0.25±20nA max Test Circuit 2Drain OFF Leakage I D (OFF)±0.1±0.1nA typ V D = ±15.5 V, V S = ϯ15.5 V;±0.25±5±0.25±20nA max Test Circuit 2Channel ON Leakage I D, I S (ON)±0.1±0.1nA typ V D = V S = ±15.5 V;±0.4±10±0.4±40nA max Test Circuit 3DIGITAL INPUTSInput High Voltage, V INH 2.4 2.4V minInput Low Voltage, V INL0.80.8V maxInput CurrentI INL or I INH0.0050.005µA typ V IN = V INL or V INH±0.5±0.5µA maxDYNAMIC CHARACTERISTICS2t ON110110ns typ R L = 300 Ω, C L = 35 pF;175175ns max V S = ±10 V; Test Circuit 4t OFF100100ns typ R L = 300 Ω, C L = 35 pF;145145ns max V S = ±10 V; Test Circuit 4 Break-Before-Make Time Delay, t D2525ns typ R L = 300 Ω, C L = 35 pF;(ADG413 Only)V S1 = V S2 = +10 V;Test Circuit 5Charge Injection55pC typ V S = 0 V, R S = 0 Ω, C L = 10 nF;Test Circuit 6OFF Isolation6868dB typ R L = 50 Ω, C L = 5 pF, f = 1 MHz;Test Circuit 7Channel-to-Channel Crosstalk8585dB typ R L = 50 Ω, C L = 5 pF, f = 1 MHz;Test Circuit 8C S (OFF)99pF typ f = 1 MHzC D (OFF)99pF typ f = 1 MHzC D, C S (ON)3535pF typ f = 1 MHzPOWER REQUIREMENTS V DD = +16.5 V, V SS = –16.5 VDigital Inputs = 0 V or 5 VI DD0.00010.0001µA typ1515µA maxI SS0.00010.0001µA typ1515µA maxI L0.00010.0001µA typ1515µA maxNOTES1Temperature ranges are as follows: B Versions: –40°C to +85°C; T Versions: –55°C to +125°C.2Guaranteed by design, not subject to production test.Specifications subject to change without notice.Truth Table (ADG411/ADG412)ADG411 In ADG412 In Switch Condition 01ON10OFF ADG411/ADG412/ADG413Single SupplyB Version T Version–40؇C to–55؇C toParameter+25؇C+85؇C+25؇C+125؇C Units Test Conditions/Comments ANALOG SIGNAL RANGE0 V to V DD0 V to V DD VR ON4040Ω typ0 < V D = 8.5 V, I S = –10 mA;8010080100Ω max V DD = +10.8 VLEAKAGE CURRENTS V DD = +13.2 VSource OFF Leakage I S (OFF)±0.1±0.1nA typ V D = 12.2/1 V, V S = 1/12.2 V;±0.25±5±0.25±20nA max Test Circuit 2Drain OFF Leakage I D (OFF)±0.1±0.1nA typ V D = 12.2/1 V, V S = 1/12.2 V;±0.25±5±0.25±20nA max Test Circuit 2Channel ON Leakage I D, I S (ON)±0.1±0.1nA typ V D = V S = +12.2 V/+1 V;±0.4±10±0.4±40nA max Test Circuit 3DIGITAL INPUTSInput High Voltage, V INH 2.4 2.4V minInput Low Voltage, V INL0.80.8V maxInput CurrentI INL or I INH0.0050.005µA typ V IN = V INL or V INH±0.5±0.5µA maxDYNAMIC CHARACTERISTICS2t ON175175ns typ R L = 300 Ω, C L = 35 pF;250250ns max V S = +8 V; Test Circuit 4t OFF9595ns typ R L = 300 Ω, C L = 35 pF;125125ns max V S = +8 V; Test Circuit 4Break-Before-Make Time Delay, t D2525ns typ R L = 300 Ω, C L = 35 pF;(ADG413 Only)V S1 = V S2 = +10 V;Test Circuit 5Charge Injection2525pC typ V S = 0 V, R S = 0 Ω, C L = 10 nF;Test Circuit 6OFF Isolation6868dB typ R L = 50 Ω, C L = 5 pF, f = 1 MHz;Test Circuit 7Channel-to-Channel Crosstalk8585dB typ R L = 50 Ω, C L = 5 pF, f = 1 MHz;Test Circuit 8C S (OFF)99pF typ f = 1 MHzC D (OFF)99pF typ f = 1 MHzC D, C S (ON)3535pF typ f = 1 MHzPOWER REQUIREMENTS V DD = +13.2 VDigital Inputs = 0 V or 5 VI DD0.00010.0001µA typ1515µA maxI L0.00010.0001µA typ1515µA max V L = +5.25 VNOTES1Temperature ranges are as follows: B Versions: –40°C to +85°C; T Versions: –55°C to +125°C.2Guaranteed by design, not subject to production test.Specifications subject to change without notice.(V DD = +12 V ؎ 10%, V SS = 0 V, V L = +5 V ؎ 10%, GND = 0 V, unless otherwise noted)Truth Table (ADG413)Logic Switch 1, 4Switch 2, 30OFF ON1ON OFFADG411/ADG412/ADG413ORDERING GUIDEModellTemperature Range Package Option 2ADG411BN –40°C to +85°C N-16ADG411BR –40°C to +85°C R-16A ADG411TQ –55°C to +125°C Q-16ADG411BRU –40°C to +85°C RU-16ADG412BN –40°C to +85°C N-16ADG412BR –40°C to +85°C R-16A ADG412TQ –55°C to +125°C Q-16ADG413BN –40°C to +85°C N-16ADG413BR–40°C to +85°CR-16ANOTES 1To order MIL-STD-883, Class B processed parts, add /883B to T grade part numbers.2N = Plastic DIP; R = 0.15" Small Outline IC (SOIC); RU= Thin Shrink Small Outline (TSSOP); Q = Cerdip.ABSOLUTE MAXIMUM RATINGS 1(T A = +25°C unless otherwise noted)V DD to V SS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V V DD to GND . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +25 V V SS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .+0.3 V to –25 V V L to GND . . . . . . . . . . . . . . . . . . . . . .–0.3 V to V DD + 0.3 V Analog, Digital Inputs 2 . . . . . . . . . . .V SS –2 V to V DD +2 V or30 mA, Whichever Occurs FirstContinuous Current, S or D . . . . . . . . . . . . . . . . . . . . .30 mA Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA (Pulsed at 1 ms, 10% Duty Cycle max)Operating Temperature RangeIndustrial (B Version) . . . . . . . . . . . . . . . . .–40°C to +85°C Extended (T Version) . . . . . . . . . . . . . . . .–55°C to +125°CStorage Temperature Range . . . . . . . . . . . . .–65°C to +150°C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+150°C Cerdip Package, Power Dissipation . . . . . . . . . . . . . . .900 mW θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . .76°C/W Lead Temperature, Soldering (10 sec) . . . . . . . . . . .+300°C Plastic Package, Power Dissipation . . . . . . . . . . . . . . .470 mW θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . .117°C/W Lead Temperature, Soldering (10 sec) . . . . . . . . . . .+260°C SOIC Package, Power Dissipation . . . . . . . . . . . . . . . .600 mW θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . .77°C/W TSSOP Package, Power Dissipation . . . . . . . . . . . . . .450 mW θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . .115°C/W θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . .35°C/W Lead Temperature, SolderingVapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . .+215°C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . .+220°CNOTES 1Stresses above those listed under Absolute Maximum Ratings may cause perma-nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given.TERMINOLOGYV DD Most positive power supply potential.V SSMost negative power supply potential in dual supplies. In single supply applications, it may be connected to GND.V L Logic power supply (+5 V).GND Ground (0 V) reference.S Source terminal. May be an input or output.D Drain terminal. May be an input or output.IN Logic control input.R ONOhmic resistance between D and S.I S (OFF)Source leakage current with the switch “OFF.”I D (OFF)Drain leakage current with the switch “OFF.”I D , I S (ON)Channel leakage current with the switch “ON.”V D (V S )Analog voltage on terminals D, S.C S (OFF)“OFF” switch source capacitance.C D (OFF)“OFF” switch drain capacitance.C D , C S (ON)“ON” switch capacitance.t ON Delay between applying the digital control input and the output switching on.t OFF Delay between applying the digital control input and the output switching off.t D“OFF” time or “ON” time measured between the 90% points of both switches, when switching from one address state to another.CrosstalkA measure of unwanted signal which is coupled through from one channel to another as a result of parasitic capacitance.Off Isolation A measure of unwanted signal coupling through an “OFF” switch.Charge A measure of the glitch impulse transferred Injectionfrom the digital input to the analog output during switching.PIN CONFIGURATION(DIP/SOIC)CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily accumulate on the human body and test equipment and can discharge without detection.Although the ADG411/ADG412/ADG413 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.ADG411/ADG412/ADG413Typical Performance GraphsFigure 1.On Resistance as a Function of V D (V S ) Dual Supplies Figure 2.On Resistance as a Function of V D (V S ) for Different TemperaturesFigure 3.Leakage Currents as a Function of TemperatureFigure 4.On Resistance as a Function of V D (V S ) Single SupplyFigure 5.Supply Current vs. Input Switching FrequencyFigure 6.Leakage Currents as a Function of V D (V S )ADG411/ADG412/ADG413Figure 7.Off Isolation vs. Frequency Figure 8.Crosstalk vs. Frequency APPLICATIONFigure 9 illustrates a precise, fast, sample-and-hold circuit. An AD845 is used as the input buffer while the output operational amplifier is an AD711. During the track mode, SW1 is closed and the output V OUT follows the input signal V IN. In the hold mode, SW1 is opened and the signal is held by the hold capaci-tor C H.Due to switch and capacitor leakage, the voltage on the hold capacitor will decrease with time. The ADG411/ADG412/ADG413 minimizes this droop due to its low leakage specifica-tions. The droop rate is further minimized by the use of a poly-styrene hold capacitor. The droop rate for the circuit shown is typically 30 µV/µs.A second switch, SW2, which operates in parallel with SW1, is included in this circuit to reduce pedestal error. Since both switches will be at the same potential, they will have a differen-tial effect on the op amp AD711, which will minimize charge injection effects. Pedestal error is also reduced by the compensa-tion network R C and C C. This compensation network also re-duces the hold time glitch while optimizing the acquisition time. Using the illustrated op amps and component values, the pedes-tal error has a maximum value of 5 mV over the ±10 V input range. Both the acquisition and settling times are 850 ns.Figure 9.Fast, Accurate Sample-and-HoldADG411/ADG412/ADG413Test Circuit 1.On ResistanceTest Circuit 3.On LeakageTest CircuitsTest Circuit 2.Off LeakageTest Circuit 4.Switching TimesTest Circuit 5.Break-Before-Make Time DelayTest Circuit 6.Charge InjectionADG411/ADG412/ADG413C 1748a –3–2/98Test Circuit 8.Channel-to-Channel CrosstalkTest Circuit 7.Off Isolation P R I N T E D I N U .S .A .16-Lead Cerdip(Q-16)16-Lead Plastic DIP (Narrow)(N-16)MECHANICAL INFORMATIONDimensions are shown in inches and (mm).16-Lead SOIC (R-16A)16-Lead TSSOP(RU-16)。

TETRIX 421.521 ACDC comfort

保证，在说明书规定的合理使用范围内，我们为您提供一年期限的质保期。全程质量控制体系！从每个部件的生产到最终成品，我们全程质量控制，从每个细节让产品的质量得
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待我们的每一个产品，从原材料的选择，加工到装配，我们每个焊接都做到无可挑剔。本操作手册内容包括：机器调试、安全操作规定、维护和保养、技术参数以及质保方面的相关规
焊机可以在符合IEC 60974，EN 60974， VDE0544 防触电附加标准环境下使用。
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Dated: 20.04.07
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LMV321IDBVT中文资料

PACKAGING INFORMATIONOrderableDevice Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)LMV321IDBVR ACTIVE SOT-23DBV 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV321IDBVT ACTIVE SOT-23DBV 5250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV321IDCKR ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV321IDCKT ACTIVE SC70DCK 5250Pb-Free (RoHS)CU NIPDAU Level-1-260C-UNLIM LMV324ID ACTIVE SOIC D 1450Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV324IDR ACTIVE SOIC D 142500Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV324IPWR ACTIVE TSSOP PW 142000Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LMV324QD ACTIVE SOIC D 1450Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV324QDR ACTIVE SOIC D 142500Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV324QPW ACTIVE TSSOP PW 1490Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LMV324QPWR ACTIVE TSSOP PW 142000Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LMV324SID ACTIVE SOIC D 1640Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV324SIDR ACTIVE SOIC D 162500Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV324SIPWR ACTIVE TSSOP PW 162000Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LMV358ID ACTIVE SOIC D 875Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV358IDDUR ACTIVE VSSOP DDU 83000Pb-Free (RoHS)CU NIPDAU Level-1-260C-UNLIM LMV358IDGKR ACTIVE MSOP DGK 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR LMV358IDR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV358IPW ACTIVE TSSOP PW 8150Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LMV358IPWR ACTIVE TSSOP PW 82000Pb-Free (RoHS)CU NIPDAU Level-1-250C-UNLIM LMV358QD ACTIVE SOIC D 875Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV358QDDUR ACTIVE VSSOP DDU 83000Pb-Free (RoHS)CU NIPDAU Level-1-260C-UNLIM LMV358QDGKR ACTIVE MSOP DGK 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR LMV358QDR ACTIVE SOIC D 82500Pb-Free (RoHS)CU NIPDAU Level-2-260C-1YEAR/Level-1-235C-UNLIM LMV358QPWACTIVETSSOPPW8150Pb-Free (RoHS)CU NIPDAULevel-1-250C-UNLIM4-Mar-2005Orderable Device Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)LMV358QPWRACTIVETSSOPPW82000Pb-Free (RoHS)CU NIPDAULevel-1-250C-UNLIM(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -May not be currently available -please check /productcontent for the latest availability information and additional product content details.None:Not yet available Lead (Pb-Free).Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green (RoHS &no Sb/Br):TI defines "Green"to mean "Pb-Free"and in addition,uses package materials that do not contain halogens,including bromine (Br)or antimony (Sb)above 0.1%of total product weight.(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,andthus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.4-Mar-2005元器件交易网IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,enhancements, improvements, and other changes to its products and services at any time and to discontinueany product or service without notice. Customers should obtain the latest relevant information before placingorders and should verify that such information is current and complete. All products are sold subject to TI’s termsand conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. T esting and other quality control techniques are used to the extent TIdeems necessary to support this warranty. Except where mandated by government requirements, testing of allparameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsible fortheir products and applications using TI components. T o minimize the risks associated with customer productsand applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right,copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or processin which TI products or services are used. Information published by TI regarding third-party products or servicesdoes not constitute a license from TI to use such products or services or a warranty or endorsement thereof.Use of such information may require a license from a third party under the patents or other intellectual propertyof the third party, or a license from TI under the patents or other intellectual property of TI.Reproduction of information in TI data books or data sheets is permissible only if reproduction is withoutalteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproductionof this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable forsuch altered documentation.Resale of TI products or services with statements different from or beyond the parameters stated by TI for thatproduct or service voids all express and any implied warranties for the associated TI product or service andis an unfair and deceptive business practice. TI is not responsible or liable for any such statements.Following are URLs where you can obtain information on other Texas Instruments products and applicationsolutions:Products ApplicationsAmplifiers Audio /audioData Converters Automotive /automotiveDSP Broadband /broadbandInterface Digital Control /digitalcontrolLogic Military /militaryPower Mgmt Optical Networking /opticalnetworkMicrocontrollers Security /securityTelephony /telephonyVideo & Imaging /videoWireless /wirelessMailing Address:Texas InstrumentsPost Office Box 655303 Dallas, Texas 75265Copyright 2005, Texas Instruments Incorporated。

低功耗霍尔开关资料

低功耗霍尔开关资料Allegro 推出微功率霍爾開關IC A3212美國Allegro MicroSystem最近推出推出微功率霍爾開關IC A3212. A3212是一顆超高感度, 雙磁極性, 且具有栓鎖輸出的霍爾開關IC. 可直接取代傳統的磁簧開關, 啟動點只要40高斯, 釋放點30高斯. 特別適用於使用電池電源的手持型電子產品, 如行動電話, 無線電話, 筆記型電腦, PDA等. 操作電壓介於2.5V至3.5V之間, 特殊的時脈運作使得平均消耗功率只需15uW.A3212具有雙磁極性, 亦即只要磁北極或磁南極靠近即可啟動. 磁極離開後磁場消失, 輸出便關閉. 與其他一般霍爾IC不同的是並不要特定南極或北極才可動作, 減少組裝時分辨磁極的困擾. 並且內含切割型穩定電路, 可達到動態抵補消除, 減少霍爾原件中常因溫度或物理壓力而引起的抵補電壓, 提高動作的穩定性.A3212的特點如下:微操作功率磁北極或磁南極皆可啟動2.5V至3.5V的電池操作電壓切割式穩定電路, 具有優良的溫度穩定度, 低切換點的飄移, 及低物理壓力敏感度. 超小型包裝, 無磁極性限制, 生產組裝容易.高可靠度固態原件., 概述美国,,,,,,, ,,;,,,,,,,,,公司生产有各种类型的磁敏感(霍尔)器件，其中,,,,,系列是一组微功耗霍尔开关型传感器。

该系列有,,,,,、,,,,,、,,,,,等三种器件，它们的共同特点为工作电压和功耗极低、不依赖于磁极，即任何磁极都能使其动作(开关导通)、超敏感、数字锁存输出等。

特别适用于电池供电的手持设备。

,,,,,系列的,(,,,,(,,低工作电压和内部定时工作结构降低了器件的平均功耗。

,,,,,的功耗为,,,μ,、,,,,,为,,μ,、,,,,,为,,μ,。

该系列中各型号产品除了平均工作电流、磁灵敏性、工作时间和休眠时间比(以下称忙闲比)有差异外，其它特性几乎一样。

该产品通过斩波调零(动态消除失调)技术来改善其稳定性，从而使残余失调电压得以降低。

MVL-321GD中文资料

MVL-321GD MVL-321YD MVL-321HRD MVL-321DRD MVL-321URD04/30/2002DescriptionPackage DimensionsApplicationsl Popular T-1 (φll General purpose leads l Reliable and ruggedAbsolute Maximum TatingsGREEN YELLOWHRDR/URPower DissipationPad 10060100100mW Peak Forward Current (1/10 Duty Cycle 0.1ms pulse width)Ipf 12080120120A Continuous Forward Current Iaf 30203040mA/oC Derating Linear From 25o C 0.40.250.40.5mA Reverse VoltageV R 5555VOperating Temperature Range Topr Storage Temperature RangeTstgLead Soldering Temperature (1.6mm from body) for 3 seconds at 260oCThe MVL-321xxD series double flange color diffused Hi-EFF red (HR)and yellow Gallium Arsenide Phosphide The green LED chip is made Gallium Phosphide diode.The Aluminum Gallium Arsenide The red (UR)chip is made -55oC to + 100o CParameterSymbol Maximum Rating-55o C to + 100oC Unit Unity Opto Technology Co., Ltd.NOTES :1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.2. Protruded resin under flange is 1.5 mm (.059'') max.3. Lead spacing is measured where the leads emerge from the package.Optical -Electrical CharacteristicsPart No. : MVL-321GD@T A =25o C Symbol Min .Typ .Max .Unit .Luminous Intensity I V 6.022-mcd Forward Voltage V F - 2.1 2.8V Reverse Current I R --100µA Wavelengthλp -565-nm Spectral Line Half Width ∆λ-30-nm Viewing Angle2θ1/2-60-degPart No. : MVL-321YD@T A =25oC Symbol Min .Typ .Max .Unit .Luminous Intensity I V 4.013-mcd Forward Voltage V F - 2.1 2.8V Reverse Current I R --100µA Wavelengthλp -585-nm Spectral Line Half Width ∆λ-35-nm Viewing Angle2θ1/2-60-deg Part No. : MVL-321HRD@T A =25oC Symbol Min .Typ .Max .Unit .Luminous Intensity I V 7.020-mcd Forward Voltage V F - 2.0 2.8V Reverse Current I R --100µA Wavelengthλp -640-nm Spectral Line Half Width ∆λ-40-nm Viewing Angle2θ1/2-60-degPart No. : MVL-321DRD@T A =25oC Symbol Min .Typ .Max .Unit .Luminous Intensity I V 1040-mcd Forward Voltage V F - 1.8 2.4V Reverse Current I R --100µA Wavelengthλp -660-nm Spectral Line Half Width ∆λ-20-nm Viewing Angle2θ1/2-60-deg Part No. : MVL-321URD@T A =25o C Symbol Min .Typ .Max .Unit .Luminous Intensity I V 2080-mcd Forward Voltage V F - 1.8 2.4V Reverse Current I R --100µA Wavelengthλp -660-nm Spectral Line Half Width ∆λ-20-nm Viewing Angle2θ1/2-60-degV R =5V I F =20mA I F =20mA I F =20mAParameterTest ConditionsI F =20mA I F =20mA V R =5V I F =20mA I F =20mA I F =20mAParameterTest ConditionsI F =20mA I F =20mA V R =5V I F =20mA I F =20mA I F =20mAParameterTest ConditionsI F =10mA I F =20mA I F =20mA I F =20mATest ConditionsParameterI F =10mA I F =20mA V R =5V I F =20mA ParameterTest ConditionsI F =10mA I F =20mA V R =5V I F =20mA I F =20mA I F =20mATypical Optical-Electrical Characteristic Curves0.01.02.03.04.05.01020304050R e l a t i v e L u m i n o u s I n t e n s i t yForward Current I F (mA)Fig 4. RELATIVE LUMINOUS INTENSITYVS. FORWARD CURRENTR e l a t i v e L u m i n o u s I n t e n s i t yF o r w a r d C u r r e n t I F (m A )Forward Voltage (V)Fig 2. FORWARD CURRENT VS. FORWARD VOLTAGE010********0.81.21.62.02.42.8DR/URHR YG0.1110-30-20-10010203040506070Ambient Temperature (o C )Fig 5. RELATIVE LUMINOUS INTENSITYVS. AMBIENT TEMPERATURER e l a t i v e L u m i n o u s I n t e n s i t y0.51500550600650700750R e l a t i v e L u m i n o u s I n t e n s i t yWavelength (nm)Fig 1. RELATIVE LUMINOUS INTENSITYVS. WAVELENGTH G HRDR/URYAmbient Temperature (o C )Fig 3. FORWARD CURRENT VS. AMBIENT TEMPERATUREF o r w a r d C u r r e n t I F (m A )010*********20406080100G/HR DR/UR Y。

N32G4FRxC xE 数据手册说明书

N32G4FRxC/xE数据手册N32G4FR系列采用32 bit ARM Cortex-M4F内核，最高工作主频144MHz，支持浮点运算和DSP指令，集成多达512KB Flash，可用于安全存储指纹信息，144KB SRAM，2x12bit 5Msps ADC，2x1Msps 12bit DAC，集成多路U(S)ART、I2C、SPI、QSPI、USB、CAN通信接口，1xSDIO接口，数字摄像头（DVP）接口，支持主流的半导体指纹及光学传指纹感器，内置密码算法硬件加速引擎关键特性●内核CPU―32位ARM Cortex-M4 内核+ FPU，单周期硬件乘除法指令，支持DSP指令和MPU―内置8KB 指令Cache缓存，支持Flash加速单元执行程序0 等待―最高主频144MHz，180DMIPS●加密存储器―高达512KByte片内Flash，支持加密存储、多用户分区管理及数据保护，支持硬件ECC校验，10万次擦写次数，10年数据保持―144KByte片内SRAM（包含16KByte Retention RAM），Retention RAM支持硬件奇偶校验●时钟―HSE：4MHz~32MHz外部高速晶体―LSE：32.768KHz外部低速晶体―HSI：内部高速RC OSC 8MHz―LSI：内部低速RC OSC 40KHz―内置高速PLL―支持1路时钟输出，可配置系统时钟、HSE、HSI或PLL后分频输出●复位―支持上电/掉电/欠压/外部引脚复位―支持看门狗复位，软件复位●通信接口―7个U(S)ART接口, 最高速率达4.5 Mbps，其中3个USART接口（支持ISO7816，IrDA，LIN），4个UART接口―3个SPI接口，速率高达36 MHz，其中2个支持I2S―1个QSPI接口，速率高达144 Mbps―4个I2C接口，速率高达1 MHz，主从模式可配，从机模式下支持双地址响应―1个USB2.0 Full Speed Device接口―2个CAN 2.0A/B总线接口―1个SDIO接口，支持SD/MMC格式―1个DVP （Digital Video Port）接口●高性能模拟接口―2个12bit 5Msps高速ADC，可配置为12/10/8/6bit模式，6bit 模式下采样率高达9Msps，多达16路外部单端输入通道，支持差分模式―2个12bit DAC，采样率1Msps―支持外部输入独立参考电压源―所有模拟接口支持1.8~3.6V全电压工作●最大支持65个支持复用功能的GPIOs，大多数GPIO支持5V耐压.●2个高速DMA控制器，每个控制器支持8通道，通道源地址及目的地址任意可配●RTC实时时钟，支持闰年万年历，闹钟事件，周期性唤醒，支持内外部时钟校准●定时计数器― 2 个16bit高级定时计数器，支持输入捕获、输出比较、PWM输出以及正交编码输入等功能，最高控制精度6.9ns。

LMV324IPWRG4中文资料

PACKAGING INFORMATIONOrderableDevice Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)LMV321IDBVR ACTIVE SOT-23DBV 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV321IDBVT ACTIVE SOT-23DBV 5250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV321IDBVTE4ACTIVE SOT-23DBV 5250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV321IDCKR ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV321IDCKRG4ACTIVE SC70DCK 53000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV321IDCKT ACTIVE SC70DCK 5250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV321IDCKTE4ACTIVE SC70DCK 5250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324ID ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324IDR ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324IPWR ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324IPWRG4ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324QD ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324QDR ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324QPW ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324QPWE4ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324QPWR ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324SID ACTIVE SOIC D 1640Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324SIDE4ACTIVE SOIC D 1640Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324SIDR ACTIVE SOIC D 162500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324SIDRE4ACTIVE SOIC D 162500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324SIPWR ACTIVE TSSOP PW 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV324SIPWRE4ACTIVE TSSOP PW 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV358ID ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV358IDDUR ACTIVE VSSOP DDU 83000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM LMV358IDDURE4ACTIVEVSSOPDDU83000Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIM6-Dec-2006Orderable Device Status(1)PackageType PackageDrawing Pins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)LMV358IDE4ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358IDG4ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358IDGKR ACTIVE MSOP DGK82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358IDGKRG4ACTIVE MSOP DGK82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358IDR ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358IDRE4ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358IDRG4ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358IPW ACTIVE TSSOP PW8150Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358IPWE4ACTIVE TSSOP PW8150Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358IPWG4ACTIVE TSSOP PW8150Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358IPWR ACTIVE TSSOP PW82000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358IPWRE4ACTIVE TSSOP PW82000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358IPWRG4ACTIVE TSSOP PW82000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358QD ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358QDDUR ACTIVE VSSOP DDU83000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358QDDURE4ACTIVE VSSOP DDU83000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358QDE4ACTIVE SOIC D875Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358QDGKR ACTIVE MSOP DGK82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358QDGKRG4ACTIVE MSOP DGK82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358QDR ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358QDRE4ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358QPW ACTIVE TSSOP PW8150Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358QPWE4ACTIVE TSSOP PW8150Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358QPWR ACTIVE TSSOP PW82000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMLMV358QPWRE4ACTIVE TSSOP PW82000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM (1)The marketing status values are defined as follows:6-Dec-2006ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS),Pb-Free (RoHS Exempt),or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1)lead-based flip-chip solder bumps used between the die and package,or 2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free (RoHS compatible)as defined above.Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annualbasis.6-Dec-2006IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and todiscontinue any product or service without notice. Customers should obtain the latest relevant informationbefore placing orders and should verify that such information is current and complete. All products are soldsubject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. Testing and other quality control techniques are used to the extentTI deems necessary to support this warranty. Except where mandated by government requirements, testingof all parameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsiblefor their products and applications using TI components. To minimize the risks associated with customerproducts and applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patentright, copyright, mask work right, or other TI intellectual property right relating to any combination, machine,or process in which TI products or services are used. Information published by TI regarding third-partyproducts or services does not constitute a license from TI to use such products or services or a warranty orendorsement thereof. Use of such information may require a license from a third party under the patents orother intellectual property of the third party, or a license from TI under the patents or other intellectualproperty of TI.Reproduction of information in TI data books or data sheets is permissible only if reproduction is withoutalteration and is accompanied by all associated warranties, conditions, limitations, and notices.Reproduction of this information with alteration is an unfair and deceptive business practice. TI is notresponsible or liable for such altered documentation.Resale of TI products or services with statements different from or beyond the parameters stated by TI forthat product or service voids all express and any implied warranties for the associated TI product or serviceand is an unfair and deceptive business practice. TI is not responsible or liable for any such statements.Following are URLs where you can obtain information on other Texas Instruments products and applicationsolutions:Products ApplicationsAmplifiers Audio /audioData Converters Automotive /automotive/broadbandBroadbandDSP DigitalControl /digitalcontrol Interface Military /military Logic Power Mgmt Optical Networking /opticalnetworkSecurity /security Microcontrollers Low Power Wireless /lpw Telephony /telephonyVideo & Imaging /video/wirelessWirelessMailing Address: Texas InstrumentsPost Office Box 655303 Dallas, Texas 75265Copyright © 2007, Texas Instruments Incorporated。

l321中文资料

Converter - Brake - Inverter Module(CBI2)Symbol Conditions Maximum Ratings VRRM1600VI FAV TC= 80°C; sine 180°19AI DAVM TC= 80°C; rectangular; d = 1/318AI FSM TVJ= 25°C; t = 10 ms; sine 50 Hz160APtot TC= 25°C85WSymbol Conditions Characteristic Values(TVJ = 25°C, unless otherwise specified)min.typ.max.VF IF= 10 A; TVJ= 25°C 1.3 1.6VTVJ= 125°C 1.3VI R VR= VRRM;TVJ= 25°C0.1mATVJ= 125°C1mAt rr VR= 100 V;IF= 10 A; di/dt = -10 A/µs1µsRthJC (per diode) 1.47K/WThree Phase Brake Chopper Three Phase Rectifier InverterVRRM = 1600V VCES= 1200 V VCES= 1200 VI DAVM = 26 A IC25= 20 A IC25= 20 AI FSM = 160 A VCE(sat)= 2.3 V VCE(sat)= 2.3 V15IXYS reserves the right to change limits, test conditions and dimensions.89Application: AC motor drives withq Input from single or three phase gridq Three phase synchronous orasynchronous motorq electric braking operationFeaturesq High level of integration - only one powersemiconductor module required for thewhole driveq Fast rectifier diodes for enhanced EMCbehaviourq NPT IGBT technology with lowsaturation voltage, low switchinglosses, high RBSOA and short circuitruggednessq Epitaxial free wheeling diodes withHiperfast and soft reverse recoveryq Industry standard package with insulatedcopper base plate and soldering pins forPCB mountingq Temperature sense includedSymbol Conditions Maximum RatingsVCES TVJ= 25°C to 150°C1200VVGESContinuous± 20VVGEMTransient± 30VIC25TC= 25°C20AIC80TC= 80°C15ARBSOA VGE = ±15 V; RG= 82 Ω; TVJ= 125°C ICM= 20AClamped inductive load; L = 100 µH VCEK ≤ VCESt SC VCE= 720 V; VGE= ±15 V; RG= 82 Ω; TVJ= 125°C10µs(SCSOA)non-repetitivePtot TC= 25°C105WSymbol Conditions Characteristic Values(TVJ = 25°C, unless otherwise specified)min.typ.max.Symbol Conditions Maximum RatingsIF25TC= 25°C17AIF80TC= 80°C11AEquivalent Circuits for SimulationConductionD11 - D16Rectifier Diode (typ. at TJ= 125°C)V= 1.11 V; R= 19 mΩT1 - T6 / D1 - D6IGBT (typ. at VGE= 15 V; TJ= 125°C)V= 1.32V; R= 131 mΩFree Wheeling Diode (typ. at TJ= 125°C)V= 1.39 V; R= 56 mΩT7 / D7IGBT (typ. at VGE= 15 V; TJ= 125°C)V= 1.32 V; R= 131 mΩFree Wheeling Diode (typ. at TJ= 125°C)V= 1.39 V; R= 56 mΩThermal ResponseD11 - D16Rectifier Diode (typ.)Cth1= 0.093 J/K; Rth1= 1.212 K/WCth2= 0.778 J/K; Rth2= 0.258K/WT1 - T6 / D1 - D6IGBT (typ.)Cth1= 0.09 J/K; Rth1= 0.954 K/WCth2= 0.809J/K; Rth2= 0.246 K/WFree Wheeling Diode (typ.)Cth1= 0.043 J/K; Rth1= 2.738 K/WCth2= 0.54 J/K; Rth2= 0.462 K/WT7 / D7IGBT (typ.)Cth1= 0.09 J/K; Rth1= 0.954 K/WCth2= 0.809 J/K; Rth2= 0.246 K/WFree Wheeling Diode (typ.)Cth1= 0.043 J/K; Rth1= 2.738 K/WCth2= 0.54 J/K; Rth2= 0.462 K/WSymbol Conditions Maximum RatingsV CES T VJ = 25°C to 150°C 1200V V GES Continuous ± 20V V GEM Transient ± 30V I C25T C = 25°C 20A I C80T C = 80°C15A RBSOA V GE = ±15 V; R G = 82 Ω; T VJ = 125°C I CM = 20A Clamped inductive load; L = 100 µHV CEK ≤ V CESt SCV CE = 720 V; V GE = ±15 V; R G = 82 Ω; T VJ = 125°C 10µs (SCSOA)non-repetitive P tot T C = 25°C 105WSymbolConditionsCharacteristic ValuesSymbol Conditions Maximum RatingsV RRM T VJ = 25°C to 150°C 1200V I F25T C = 25°C 17A I F80T C = 80°C 11ASymbol Conditions Characteristic ValuesDimensions in mm (1 mm = 0.0394")0102030405001002003004005000.00.40.81.21.6I FA P tot W K/W Z thJCFig. 41Fig. 6Fig. 112345670123456751015202530V CEV V CEA V G-di/dt46810121416V V GEI 01234V V FI FFig. 7Typ. output characteristics Fig. 8Typ. output characteristicsFig. 9Typ. transfer characteristicsFig. 10Typ. forward characteristics offree wheeling diodeFig. 11Typ. turn on gate chargeFig. 12Typ. turn off characteristics offree wheeling diodeFig. 17Reverse biased safe operating areaFig. 18Typ. transient thermal impedanceRBSOA0.000010.00010.0010.010.1110200400600800100012001400V CEts VFig. 19Typ. output characteristicsFig. 20Typ. forward characteristics offree wheeling diodeFig. 23Typ. transient thermal impedanceFig. 24Typ. thermistorresistance versustemperature123456V V CEI 0123451015202530VV FI FA 0.00.51.01.52.02.5E off mJ t0.000010.00010.0010.010.11100.00010.0010.010.1110ts Z thJC255075100125150T°C。

12864中文字库说明书.pdf

FYD12864液晶中文显示模块(一) (一)概述 (3)(二)(二)外形尺寸1 方框图 (3)2 外型尺寸图 (4)(三)(三)模块的接口 (4)(四)(四)硬件说明 (5)(五) 指令说明 (7)(五)(五)读写操作时序 (8)(六)(六)交流参数 (11)(七)(七)软件初始化过程 (12)(八)(八)应用举例 (13)(九)(九)附录1半宽字符表 (20)2 汉字字符表 (21)一、概述FYD12864-0402B是一种具有4位/8位并行、2线或3线串行多种接口方式，内部含有国标一级、二级简体中文字库的点阵图形液晶显示模块；其显示分辨率为128×64, 内置8192个16*16点汉字，和128个16*8点ASCII字符集.利用该模块灵活的接口方式和简单、方便的操作指令，可构成全中文人机交互图形界面。

可以显示8×4行16×16点阵的汉字. 也可完成图形显示.低电压低功耗是其又一显著特点。

由该模块构成的液晶显示方案与同类型的图形点阵液晶显示模块相比，不论硬件电路结构或显示程序都要简洁得多，且该模块的价格也略低于相同点阵的图形液晶模块。

基本特性:●●低电源电压（VDD:+3.0--+5.5V）●●显示分辨率:128×64点●●内置汉字字库，提供8192个16×16点阵汉字(简繁体可选)●●内置 128个16×8点阵字符●●2MHZ时钟频率●●显示方式：STN、半透、正显●●驱动方式：1/32DUTY，1/5BIAS●●视角方向：6点●●背光方式：侧部高亮白色LED，功耗仅为普通LED的1/5—1/10 ●●通讯方式：串行、并口可选●●内置DC-DC转换电路，无需外加负压●●无需片选信号，简化软件设计●●工作温度: 0℃ - +55℃ ,存储温度: -20℃ - +60℃二、方框图3、外形尺寸图三、模块接口说明*注释1：如在实际应用中仅使用串口通讯模式，可将PSB接固定低电平，也可以将模块上的J8和“GND”用焊锡短接。

LMV321IDBVR中文资料

元器件交易网IMPORTANT NOTICETexas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinueany product or service without notice, and advise customers to obtain the latest version of relevant informationto verify, before placing orders, that information being relied on is current and complete. All products are soldsubject to the terms and conditions of sale supplied at the time of order acknowledgement, including thosepertaining to warranty, patent infringement, and limitation of liability.TI warrants performance of its semiconductor products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extentTI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarilyperformed, except those mandated by government requirements.CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OFDEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICALAPPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, ORWARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TOBE FULLY AT THE CUSTOMER’S RISK.In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards must be provided by the customer to minimize inherent or procedural hazards.TI assumes no liability for applications assistance or customer product design. TI does not warrant or representthat any license, either express or implied, is granted under any patent right, copyright, mask work right, or otherintellectual property right of TI covering or relating to any combination, machine, or process in which suchsemiconductor products or services might be or are used. TI’s publication of information regarding any thirdparty’s products or services does not constitute TI’s approval, warranty or endorsement thereof.Copyright © 2000, Texas Instruments Incorporated。

BM321系列说明书

BM321 系列
电阻、电容的推荐值如下：器件标号 R1、R6
R2、R3、R4、R5 R7、R8、R9、R10
R11、R12、R13 R14、R15、R16 R17、R18、R19 R20、R21、R22 R23、R24、R25 R26、R27、R28 R29、R30、R31 R32、R33、R34
2/32
BYD Microelectronics Co., Ltd.
产品选择产品名说明第一个 X 代表过充检测阈值电压（Vdet1）第二个 X 代表过放检测阈值电压（Vdet2）第三个 X 代表过流 1 检测阈值电压（Vdet3）第四个 X 代表版本的其他信息
R35 R36 R37 R_Exa R_Exs R38 R39 R40、R41、R42、R43、 R47、R48、R49、R50 R44、R45、R46、R51、 R52、R53 R54 C1、C2、C3、 C4、C5、C6 C7、C8、C9、 C10、C11、C12
B8+
R32
R33
R54
2Bal4
R34
Q8
R47 R48 R49 R50 R51 R52 R53
R39
8 芯电池包含过热保护及低温加热功能应用电路图（QFN5*5-32L 封装）
说明书
ES-BYD-WDZCE01D-057 Rev.A/1
8/32
BYD Microelectronics Co., Ltd.
BM321 系列
产品名
Vdet1
Vdet2
Vdet3
Vbal1
Vbal2
封装形式
BM321MCFA 3.850±0.050V 2.000±0.100V (Vcc-0.20)±0.030V 3.580±0.100V 2.460±0.100V QFN5*5-32L

A3212中文规格书-Datasheet资料

DFN (EH)Micropower, UltrasensitiveHall-Ef f ect SwitchesA3211 and A3212 DFN (EL)This device includes on a single silicon chip a Hall-voltage gen-erator, small-signal amplifier, chopper sta b i l i z a t ion, a latch, and a MOSFET output. Advanced CMOS processing is used to take advantage of low-voltage and low-power requirements, compo-nent matching, very low input-offset errors, and small component geometries.Four package styles provide magnetically op t i m ized solutions for most ap p li c a t ions. Miniature low-profile surface-mount package types EH and EL (0.75 and 0.50 mm nominal height) are leadless, LH is a 3-pin low-profile SMD, and UA is a three-pin SIP for through-hole mount i ng. Packages are lead (Pb) free (suffix, –T )with 100% matte tin plated leadframes.Description (continued)Absolute Maximum RatingsCharacteristicSymbol NotesRating Units Supply Voltage V DD 5V Magnetic Flux Density B UnlimitedG Output Off Voltage V OUT 5V Output CurrentI OUT 1mA Operating Ambient Temperature T A Range E –40 to 85ºC Range L–40 to 150ºC Maximum Junction Temperature T J (max)165ºC Storage TemperatureT stg–65 to 170ºCSelection GuidePart Number Packing 1PackageAmbient TemperatureT A (°C)State in Magnetic FieldA3211EEHLT–T 23000 pieces per reel 2 mm x 3 mm, 0.75 mm nominal height DFN –40 to 85OffA3211EELLT–T 23000 pieces per reel 2 mm x 2 mm, 0.50 mm nominal height DFN A3211ELHLT–T 3000 pieces per reel 3-pin surface mount SOT23WA3212EEHLT–T 23000 pieces per reel 2 mm x 3 mm, 0.75 mm nominal height DFN –40 to 85OnA3212EELLT–T 23000 pieces per reel 2 mm x 2 mm, 0.50 mm nominal height DFN A3212ELHLT–T 3000 pieces per reel 3-pin surface mount SOT23W A3212EUA–T 500 pieces per bulk bag SIP-3 through holeA3212LLHLT–T 3000 pieces per reel 3-pin surface mount SOT23W –40 to 150A3212LUA–T500 pieces per bulk bagSIP-3 through hole1Contact Allegro for additional packaging and handling options.2Allegro products sold in DFN package types are not intended for automotive applications.Package Suffix ‘UA’ Pinning(SIP)Package Suffix ‘LH’ Pinning(SOT23W)Dwg. PH-016-1S U P P L YG R O U N DO U T P U TELECTRICAL CHARACTERISTICS over operating voltage and temperature range (unless otherwise specified).Characteristic Symbol Test ConditionsLimitsMin.Typ.*Max.UnitsSupply Voltage Range V DD Operating 2.5 2.75 3.5V Output Leakage Current I OFF V OUT = 3.5 V, Output off–<1.0 1.0μA Output On Voltage V OUT I OUT = 1 mA, V DD = 2.75 V–100300mV Awake Time t awake–4590μs Period t period–4590ms Duty Cycle d.c.–0.1–% Chopping Frequency f C–340–kHzSupply Current I DD(EN)Chip awake (enabled)–– 2.0mA I DD(DIS)Chip asleep (disabled)––8.0μAI DD(AVG)V DD = 2.75 V– 5.110μAV DD = 3.5 V– 6.710μA* Typical data is at T A = 25°C and V DD = 2.75 V, and is for design information only.A3211 MAGNETIC CHARACTERISTICS over operating voltage range (unless otherwise specified)Characteristic Symbol Test ConditionsLimitsMin.Typ.Max.UnitsOver Temperature Range E: T A = –40°C to 85°COperate Points B OPS South pole to branded side; B > B OP, V OUT = High (Output Off)–3755G B OPN North pole to branded side; B > B OP, V OUT = High (Output Off)–55–40–GRelease Points B RPS South pole to branded side; B < B RP, V OUT = Low (Output On)1031–G B RPN North pole to branded side; B < B RP, V OUT = Low (Output On)––34–10GHysteresis B HYS|B OPx - B RPx|– 5.9–G NOTES: 1. Negative flux densities are defined as less than zero (algebraic convention), i.e., -50 G is less than +10 G.2.B OPx = operate point (output turns off); B RPx = release point (output turns on).3. Typical Data is at T A = +25°C and V DD = 2.75 V and is for design information only.4. 1 gauss (G) is exactly equal to 0.1 millitesla (mT).Characteristic Symbol Test ConditionsLimitsMin.Typ.Max.UnitsOver Temperature Range E: T A = –40°C to 85°COperate Points B OPS South pole to branded side; B > B OP, V OUT = Low (Output On)–3755G B OPN North pole to branded side; B > B OP, V OUT = Low (Output On)–55–40–GRelease Points B RPS South pole to branded side; B < B RP, V OUT = High (Output Off)1031–G B RPN North pole to branded side; B < B RP, V OUT = High (Output Off)––34–10GHysteresis B HYS|B OPx - B RPx|– 5.9–G Over Temperature Range L: T A = –40°C to 150°COperate Points B OPS South pole to branded side; B > B OP, V OUT = Low (Output On)–3765G B OPN North pole to branded side; B > B OP, V OUT = Low (Output On)–65–40–GRelease Points B RPS South pole to branded side; B < B RP, V OUT = High (Output Off)1031–G B RPN North pole to branded side; B < B RP, V OUT = High (Output Off)––34–10GHysteresis B HYS|B OPx - B RPx|– 5.9–G NOTES: 1. Negative flux densities are defined as less than zero (algebraic convention), i.e., -50 G is less than +10 G.2.B OPx = operate point (output turns on); B RPx = release point (output turns off).3. Typical Data is at T A = +25°C and V DD = 2.75 V and is for design information only.4. 1 gauss (G) is exactly equal to 0.1 millitesla (mT).A3212 MAGNETIC CHARACTERISTICS over operating voltage range (unless otherwise specified)SUPPLY CURRENTFUNCTIONAL DESCRIPTIONChopper-Stabilized Technique. The Hall element can be considered as a resistor array similar to a Wheatstone bridge. A large portion of the offset is a result of the mismatching of these resistors. These devices use a proprietary dynamic offset cancel-lation technique, with an internal high-frequency clock to reduce the residual offset voltage of the Hall element that is normally caused by device overmolding, temperature de p en d en c ies, and thermal stress. The chopper-stabilizing technique cancels the mismatching of the resistor circuit by changing the direction of the current flowing through the Hall plate using CMOS switches and Hall voltage measurement taps, while maintaing the Hall-voltage signal that is induced by the external magnetic flux. The signal is then captured by a sample-and-hold circuit and further processed using low-offset bipolar circuitry. This technique produces devices that have an extremely stable quiescent Hall output voltage, are immune to thermal stress, and have precise recoverability after temperature cycling. A relatively high sam-pling frequency is used for faster signal processing capability can be processed.More detailed descriptions of the circuit operation can be found in: Technical Paper STP 97-10, Monolithic Magnetic Hall Sensing Using Dynamic Quadrature Offset Cancellation and Technical Paper STP 99-1, Chopper-Stabilized Amplifiers With AOperation. The output of the A3212 switches low (turns on)the operate point B OPS (or is less than B OPN output is capable of sinking up to 1 mA and the output voltage is V OUT(ON). When the magnetic field is reduced below the release point B RPS (or increased above B RPN switches high (turns off). The dif f er e and release points is the hysteresis (B hys ) of the device. This built-in hysteresis allows clean switching of the output even in the presence of external mechanical vibration and electrical to the right.As used here, negative flux densities are defined as less than zero (algebraic convention), i.e., -50 G is less than +10 G.Applications. Allegro's pole-independent processing tech-nique allows for operation with either a north pole or south pole magnet orientation, enhancing the manufacturability of the device. The state-of-the-art technology provides the same output polarity for either pole face.It is strongly recommended that an external bypass ca p ac i t or be con n ect e d (in close proximity to the Hall element) between the supply and ground of the device to reduce both external noise and noise generated by the chopper-sta b i l i z a t ion tech n ique. This is especially true due to the relatively high im p ed a nce of battery supplies.The sim p lest form of magnet that will op e r a te these devices is a bar magnet with either pole near the branded surface of the device. Many oth e r meth o ds of operation are possible. Ex t en- s ive applications information for Hall-effect devices is available in:• Hall-Effect IC Applications Guide , Application Note 27701;• Hall-Effect Devices: Soldering, Gluing, Potting, En c ap s ul at-i ng, and Lead Forming , Application Note 27703.1;• Soldering of Through-Hole Hall-Sensing Dervices , Application Note 27703; and• Soldering of Surface-Mount Hall-Sensing Devices , Application Note 27703.2. All are provided atFUNCTIONAL DESCRIPTION (cont'd)0+B0-B5 V MAXO U T P U T V O L T A G EMAGNETIC FLUXPackage EH, 6-Contact DFNA Terminal #1 mark areaB Exposed thermal pad (reference only, terminal #1 identifier appearance at supplier discretion)For Reference Only, not for tooling use (reference DWG-2861;reference JEDEC MO-229WCED, Type 1)Dimensions in millimetersExact case and lead configuration at supplier discretion within limits shown CReference land pattern layout;All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary to meet application process requirements and PCB layout tolerances; when mounting on a multilayer PCB, thermal vias at the exposed thermal pad land can improve thermal dissipation (reference EIA/JEDEC Standard JESD51-5)Hall Element (not to scale); U.S. customary dimensions controlling Branding scale and appearance at supplier discretionEF Active Area Depth, 0.32 mm NOMGG 1.042+0.100–0.150DCoplanarity includes exposed thermal pad and terminals Standard Branding Reference View Y = Last two digits of year of manufacture W = Week of manufacture L = Lot numberN = Last two digits of device part numberYWW LLL NN1Package EL, 3-Contact DFN–0.15A Terminal #1 mark areaB Exposed thermal pad (reference only, terminal #1 identifier appearance at supplier discretion)For Reference Only, not for tooling use (reference DWG-2865; reference JEDEC MO-229UCCD)Dimensions in millimetersExact case and lead configuration at supplier discretion within limits shown C Reference land pattern layout (reference IPC7351);All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary to meet application process requirements and PCB layout tolerances; when mounting on a multilayer PCB, thermal vias at the exposed thermal pad land can improve thermal dissipation (reference EIA/JEDEC Standard JESD51-5)Hall Element (not to scale)D Coplanarity includes exposed thermal pad and terminalsBranding scale and appearance at supplier discretionEF GActive Area Depth, 0.18 mm NOM分销商库存信息:ALLEGROA3212EELLT-T A3212ELHLT-T A3211EELLT-T A3211EEHLT-T A3211ELHLT-T A3212EUA-T A3212EEHLT-T A3212LLHLT-T A3212LUA-T A3212EEHLT A3212LLHLT A3212LUAA3211EUA-T。

2012海力士产品手册

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图像传感器用于各种便携式消费性电子设备产品，例如，手机与手持游戏设备。

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ADC10321CIVT;ADC10321CIVTNOPB;中文规格书,Datasheet资料

ADC1032110-Bit,20MSPS,98mW A/D Converter with Internal Sample and HoldGeneral DescriptionThe ADC10321is a low power,high performance CMOS analog-to-digital converter that digitizes signals to 10bits resolution at sampling rates up to 25Msps while consuming a typical 98mW from a single 5V supply.Reference force and sense pins allow the user to connect an external refer-ence buffer amplifier to ensure optimal accuracy.No missing codes is guaranteed over the full operating temperature range.The unique two stage architecture achieves 9.2Ef-fective Bits with a 10MHz input signal and a 20MHz clock frequency.Output formatting is straight binary coding.To ease interfacing to 3V systems,the digital I/O power pins of the ADC10321can be tied to a 3V power source,making the outputs 3V compatible.When not converting,power consumption can be reduced by pulling the PD (Power Down)pin high,placing the converter into a low power standby state,where it typically consumes less than 4mW.The ADC10321’s speed,resolution and single supply opera-tion makes it well suited for a variety of applications in video,imaging,communications,multimedia and high speed data acquisition.Low power,single supply operation ideally suit the ADC10321for high speed portable applications,and its speed and resolution are ideal for charge coupled device (CCD)input systems.The ADC10321comes in a space saving 32-pin TQFP and operates over the industrial (−40˚C ≤T A ≤+85˚C)tempera-ture range.Featuresn Internal Sample-and-Hold n Single +5V Operationn Low Power Standby Moden Guaranteed No Missing Codes n Tri-State Outputsn TTL/CMOS or 3V Logic Input/Output CompatibleKey Specificationsn Resolution10Bits n Conversion Rate20Msps n ENOB @10MHz Input 9.2Bits (typ)n DNL0.35LSB (typ)n Conversion Latency 2Clock Cyclesn PSRR56dB n Power Consumption98mW (typ)nLow Power Standby Mode<4mW (typ)Applicationsn Digital Video n Communications n Document Scanners n Medical Imaging n Electro-Opticsn Plain Paper Copiers nCCD ImagingJanuary 2003ADC1032110-Bit,20MSPS,98mW A/D Converter with Internal Sample and Hold©2003National Semiconductor Corporation Connection Diagram10089701Ordering InformationCommercial(−40˚C ≤T A ≤+85˚C)NS PackageADC10321CIVTTQFPBlock Diagram10089702A D C 10321 2Pin Descriptions and Equivalent CircuitsPin No.SymbolEquivalent CircuitDescriptionAnalog I/O30V INAnalog Input signal to be converted.Conversion range is V REF +S to V REF −S.31V REF +FAnalog input that goes to the high side of the reference ladder of the ADC.This voltage should force V REF +S to be in the range of 2.3V to 4.0V.32V REF +SAnalog output used to sense the voltage near the top of the ADC reference ladder.2V REF −FAnalog input that goes to the low side of thereference ladder of the ADC.This voltage should force V REF−S to be in the range of 1.3V to 3.0V.1V REF−SAnalog output used to sense the voltage near the bottom of the ADC reference ladder.9CLKConverter digital clock input.V IN is sampled on the falling edge of CLK input.8PDPower Down input.When this pin is high,theconverter is in the Power Down mode and the data output pins are in a high impedance state.26OEOutput Enable pin.When this pin and the PD pin are low,the output data pins are active.When this pin or the PD pin is high,the output data pins are in a high impedance state.14thru 19and 22thru 25D0-D9Digital Output pins providing the 10bit conversion results.D0is the LSB,D9is the MSB.Valid data is present just after the falling edge of the CLK input.3,7,28V APositive analog supply pins.These pins should be connected to a clean,quiet voltage source of +5V.V A and V D should have a common supply and beseparately bypassed with 10µF to 50µF capacitors in parallel with 0.1µF capacitors.ADC103213Pin Descriptions and Equivalent Circuits(Continued)Pin No.SymbolEquivalent CircuitDescription5,10V DPositive digital supply pins.These pins should beconnected to a clean,quiet voltage source of +5V.V A and V D should have a common supply and beseparately bypassed with 10µF to 50µF capacitors in parallel with 0.1µF capacitors.12,21V D I/OPositive supply pins for the digital output drivers.These pins should be connected to a clean,quiet voltage source of +3V to +5V and be separately bypassed with 10µF capacitors.4,27,29AGNDThe ground return for the analog supply.AGND and DGND should be connected together close to the ADC10321package.6,11DGND The ground return for the digital supply.AGND and DGND should be connected together close to the ADC10321pacjage.13,20DGND I/OThe ground return of the digital output drivers.A D C 10321 4Absolute Maximum Ratings(Notes1, 2)If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.Positive Supply Voltage(V=V A=V D) 6.5V Voltage on Any I/O Pin−0.3V to(V A or V D)+0.3V) Input Current at Any Pin(Note3)±25mA Package Input Current(Note3)±50mA Package Dissipation at T A=25˚CSee(Note4) ESD Susceptibility(Note5)Human Body Model1500VMachine Model200V Soldering Temp.,Infrared,10sec.(Note6)235˚C Storage Temperature−65˚C to+150˚COperating Ratings(Notes1,2)Operating Temperature−40˚C≤T A≤+85˚C V A,V D Supply Voltage+4.5V to+5.5V V D I/O Supply Voltage+2.7V to5.5V V IN Voltage Range 1.3V to(V A-1.0V) V REF+Voltage Range 2.3V to(V A-1.0V) V REF−Voltage Range 1.3V to3.0V PD,CLK,OE Voltage−0.3V to+5.5VConverter Electrical CharacteristicsThe following specifications apply for V A=+5.0V DC,V D=5.0V DC,V D I/O=5.0V DC,V REF+=+3.5V DC,V REF−=+1.5V DC, C L=20pF,f CLK=20MHz,R S=25Ω.Boldface limits apply for T A=T MIN to T MAX:all other limits T A=25˚C(Note7)Symbol Parameter Conditions Typical(Note8)Limits(Note9)UnitsStatic Converter CharacteristicsINL Integral Non-Linearity±0.45±1.0LSB(max) DNL Differential-Non Linearity±0.35±0.85LSB(max) Resolution with No MissingCodes10Bits Zero Scale Offset Error−6mV(max)Full-Scale Error−6mV(max) Dynamic Converter CharacteristicsENOB Effective Number of Bits f IN=1.0MHzf IN=4.43MHzf IN=10MHz9.59.59.29.0BitsBits(min)BitsS/(N+D)Signal-to-Noise PlusDistortion Ratiof IN=1.0MHzf IN=4.43MHzf IN=10MHz59595756dBdB(min)dBSNR Signal-to-Noise Ratio f IN=1.0MHzf IN=4.43MHzf IN=10MHz60605858dBdB(min)dBTHD Total Harmonic Distortion f IN=1.0MHzf IN=4.43MHzf IN=10MHz−71−70−66−59dBdB(min)dBSFDR Spurious Free DynamicRangef IN=1.0MHzf IN=4.43MHzf IN=10MHz74726860dBdBdBDG Differential Gain Error f IN=4.43MHz,f CLK=17.72MHz0.5%(max) DP Differential Phase Error f IN=4.43MHz,f CLK=17.72MHz0.5deg(max) Overrange Output Code V IN>V REF+1023Underrange Output Code V IN<V REF−0BW Full Power Bandwidth150MHzPSRR Power Supply RejectionRatioChange in Full Scale with4.5V to5.5VSupply Change56dBReference and Analog Input CharacteristicsV IN Analog Input Range1.34.0V(min)V(max)ADC103215Converter Electrical Characteristics(Continued)The following specifications apply for V A =+5.0V DC ,V D =5.0V DC ,V D I/O =5.0V DC ,V REF +=+3.5V DC ,V REF −=+1.5V DC ,C L =20pF,f CLK =20MHz,R S =25Ω.Boldface limits apply for T A =T MIN to T MAX :all other limits T A =25˚C(Note 7)Symbol ParameterConditionsTypical (Note 8)Limits (Note 9)Units C IN Analog V IN Input Capacitance5pF I IN Input Leakage Current 10µA R REF Reference Ladder Resistance10008501150Ω(min)Ω(max)V REF +Positive Reference Voltage 3.5 4.0V(max)V REF −Negative Reference Voltage 1.5 1.3V(min)(V REF +)−(V REF −)Total Reference Voltage2.01.02.7V(min)V(max)DC and Logic Electrical CharacteristicsThe following specifications apply for V A =+5.0V DC ,V D =+5.0V DC ,V D I/O =5.0V DC ,V REF +=+3.5V DC ,V REF −=+1.5V DC ,C L =20pF,f CLK =20MHz,R S =25Ω.Boldface limits apply for T A =T MIN to T MAX :all other limits T A =25˚C(Note 7)SymbolParameterConditionsTypical (Note 8)Limits (Note 9)UnitsCLK,OE,PD,Digital Input Characteristics V IH Logical "1"Input Voltage V D =5.5V 2.0V(min)V IL Logical "0"Input Voltage V D =4.5V 1.0V(max)I IH Logical "1"Input Current V IH =V D 10µA I ILLogical "0"Input Current V IL =DGND−10µA D00-D13Digital Output Characteristics V OH Logical "1"Output VoltageV D I/O =+4.5V,I OUT =−0.5mA V D I/O =+2.7V,I OUT =−0.5mA 4.02.4V(min)V(min)V OL Logical "0"Output VoltageV D I/O =+4.5V,I OUT =−1.6mA V D I/O =+2.7V,I OUT =−1.6mA 0.40.4V(max)V(max)I OZ TRI-STATE Output CurrentV OUT =DGND V OUT =V D −1010µA µA I OSOutput Short Circuit CurrentV D I/O =3V ±12mA V D I/O =5V±25mAPower Supply Characteristics I AAnalog Supply Current PD =LOW,Ref not included PD =HIGH,Ref not included 14.50.516mA(max)I D +I D I/O Digital Supply Current PD =LOW,Ref not included PD =HIGH,Ref not included50.26mA(max)P DPower Consumption98110mW (max)AC Electrical CharacteristicsThe following specifications apply for V A =+5.0V DC ,V D I/O =5.0V DC ,V REF +=+3.5V DC ,V REF −=+1.5V DC ,f CLK =20MHz,t rc =t fc =5ns,R S =25Ω.C L (data bus loading)=20pF,Boldface limits apply for T A =T MIN to T MAX :all other limits T A =25˚C(Note 7)Symbol ParameterConditionsTypical (Note 8)Limits (Note 9)Units (Limits)f CLK1Maximum Clock Frequency 2520MHz(min)f CLK2Minimum Clock Frequency 1MHz(max)t CH Clock High Time 23ns(min t CLClock Low Time 23ns(min)Duty Cycle504555%(min)%(max)A D C 10321 6AC Electrical Characteristics(Continued)The following specifications apply for V A=+5.0V DC,V D I/O=5.0V DC,V REF+=+3.5V DC,V REF−=+1.5V DC,f CLK=20MHz,t rc =t fc=5ns,R S=25Ω.C L(data bus loading)=20pF,Boldface limits apply for T A=T MIN to T MAX:all other limits T A=25˚C(Note7)Symbol Parameter Conditions Typical(Note8)Limits(Note9)Units(Limits)Pipeliine Delay(Latency) 2.0Clock Cycles t rc,t fc Clock Input Rise and Fall Time5ns(max)t r,t f Output Rise and Fall Times10nst OD Fall of CLK to data valid2025ns(max)t OH Output Data Hold Time12nst DIS Rising edge of OE to valid data From output High,2Kto Ground25ns From output Low,2Kto V D I/O18nst EN Falling edge of OE to valid data1K to V CC25nst VALID Data valid time40nst AD Apeture Delay4nst AJ Aperture Jitter<30ps Full Scale Step Response t r=10ns1conversionOverrange Recovery Time V IN step from(V REF++100mV)to(V REF−)1conversiont WU PD low to1/2LSB accurateconversion(Wake-Up time)700nsNote1:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Operating Ratings indicate conditions for which the device is functional,but do not guarantee specific performance limits.For guaranteed specifications and test conditions,see the Electrical Characteristics.The guaranteed specifications apply only for the test conditions listed.Some performance characteristics may degrade when the device is not operated under the listed test conditions.Note2:All voltages are measured with respect to GND=AGND=DGND=0V,unless otherwise specified.Note3:When the input voltage at any pin exceeds the power supplies(V IN<AGND or V IN>V A or V D),the current at that pin should be limited to25mA.The50mA maximum package input current rating limits the number of pins that can safely exceed the power supplies with an input current of25mA to two.Note4:The absolute maximum junction temperature(T J max)for this device is150˚C.The maximum allowable power dissipation is dictated by TJmax,thejunction-to-ambient thermal resistance(θJA),and the ambient temperature(T A),and can be calculated using the formula P D MAX=(T J max-T A)/θJA.In the32-pinTQFP,θJA is69˚C/W,so P D MAX=1,811mW at25˚C and942mW at the maximum operating ambient temperature of85˚C.Note that the power dissipation of thisdevice under normal operation will typically be about110mW(98mW quiescent power+2mW reference ladder power+10mW due to10TTL load on each digital output).The values for maximum power dissipation listed above will be reached only when the ADC10321is operated in a severe fault condition(e.g.when inputor output pins are driven beyond the power supply voltages,or the power supply polarity is reversed).Obviously,such conditions should always be avoided.Note5:Human body model is100pF capacitor discharged through a1.5kΩresistor.Machine model is220pF discharged through ZEROΩ.Note6:The235˚C reflow temperature refers to infared reflow.For Vapor Phase Reflow(VPR),the following conditions apply:Maintain the temperature at the topof the package body above183˚C for a minimum60seconds.The temperature measured on the package body must not exceed220˚C.Only one excursion above183˚C is allowed per reflow cycle.Note7:The inputs are protected as shown below.Input voltage magnitudes up to500mV beyond the supply rails will not damage this device.However,errors inthe A/D conversion can occur if the input goes above V A or below AGND by more than300mV.ADC103217AC Electrical Characteristics(Continued)100897111008971210089724Note 8:Typical figures are at T A =T J =25˚C,and represent most likely parametric norms.Note 9:Tested limits are guaranteed to Nationsl’s AOQL (Average Outgoing Quality Level).Note 10:When the input signal is between V REF +and (V A +300mV),the output code will be 3FFh,or all 1s.When the input signal is between −300mV and V REF −,the output code will be 000h,or all 0s.Typical Performance CharacteristicsV A =V D =V D I/O =5V,f CLK =20MHz,unless otherwisespecified.Typical INLINL vs f CLKINL vs V A100897251008972610089727INL vs Clock Duty Cycle Typical DNLDNL vs f CLK100897381008973910089728DNL vs V ADNL vs Clock Duty CycleSINAD &ENOB vs Temperature and f IN100897291008974010089730A D C 10321 8Typical Performance Characteristics V A =V D =V D I/O =5V,f CLK =20MHz,unless otherwisespecified.(Continued)SINAD &ENOB vs V A SINAD &ENOB vsf CLK and f INI A +I D vs.Temperature100897311008973210089737Spectral Response at 20MSPs10089735ADC103219Specification DefinitionsAPERTURE JITTER is the variation in aperture delay from sample to sample.Aperture jitter shows up as input noise.APERTURE DELAY See Sampling Delay.DIFFERENTIAL GAIN ERROR is the percentage difference between the output amplitudes of a given amplitude small signal,high frequency sine wave input at two different dc input levels.DIFFERENTIAL PHASE ERROR is the difference in the output phase of a small signal sine wave input at two differ-ent dc input levels.DIFFERENTIAL NON-LINEARITY (DNL)is the measure of the maximum deviation from the ideal step size of 1LSB.EFFECTIVE NUMBER OF BITS (ENOB,or EFFECTIVE BITS)is another method of specifying Signal-to-Noise and Distortion Ratio (S/N+D or SINAD).ENOB is defined as (SINAD −1.76)/6.02.FULL POWER BANDWIDTH is a measure of the frequency at which the reconstructed output fundamental drops 3dB below its 1MHz value for a full scale input.The test is performed with f IN equal to 100kHz plus integral multiples of f CLK .The input frequency at which the output is −3dB relative to the1MHz input signal is the full power bandwidth.FULL SCALE (FS)INPUT RANGE of the ADC is the input range of voltages over which the ADC will digitize that input.For V REF +=3.50V and V REF −=1.50V,FS =(V REF +)−(V REF −)=2.00V.FULL SCALE OFFSET ERROR is a measure of how far the last code transition is from the ideal 11⁄2LSB below V REF +and is defined as V 1023−1.5LSB −V REF +,where V 1023is the voltage at which the transitions from code 1022to 1023occurs.FULL SCALE STEP RESPONSE is defined as the time required after V IN goes from V REF −to V REF +,or V REF +to V REF −,and settles sufficiently for the converter to recover and make a conversion with its rated accuracy.INTEGRAL NON-LINEARITY (INL)is a measure of the deviation of each individual code from a line drawn from negative full scale (1⁄2LSB below the first code transition)through positive full scale (11⁄2LSB above the last code transition).The deviation of any given code from this straight line is measured from the center of that code value.OUTPUT DELAY is the time delay after the fall of the input clock before the data update is present at the output pins.OUTPUT HOLD TIME is the length of time that the output data is valid after the fall of the input clock.OVER RANGE RECOVERY TIME is the time required after V IN goes from AGND to V REF +or V IN goes from V A to V REF −for the converter to recover and make a conversion with its rated accuracy.PIPELINE DELAY (LATENCY)is the number of clock cycles between initiation of conversion and when that data is pre-sented to the output driver stage.Data for any given sample is available by the Pipeline Delay plus the Output Delay after that sample is taken.New data is available at every clock cycle,but the data lags the conversion by the pipeline delay.PSRR (POWER SUPPLY REJECTION RATIO)is the ratio of the change in dc power supply voltage to the resulting change in Full Scale Error,expressed in dB.SAMPLING (APERTURE)DELAY or APERTURE TIME is that time required after the fall of the clock input for the sampling switch to open.The sample is effectively taken this amount of time after the fall of the clock input.SIGNAL TO NOISE RATIO (SNR)is the ratio,expressed in dB,of the rms value of the input signal to the rms value of the sum of all other spectral components below one-half the sampling frequency,not including harmonics or dc.SIGNAL TO NOISE PLUS DISTORTION (S/(N+D)or SI-NAD)is the ratio,expressed in dB,of the RMS value of the input signal to the RMS value of all of the other spectral components below half the clock frequency,including har-monics but excluding dc.SPURIOUS FREE DYNAMIC RANGE (SFDR)is the differ-ence,expressed in dB or dBc,between the RMS values of the input signal and the peak spurious signal,where a spurious signal is any signal present in the output spectrum that is not present at the input.TOTAL HARMONIC DISTORTION (THD)is the ratio,ex-pressed in dB,of the rms total of the first six harmonic components,to the rms value of the input signal.ZERO SCALE OFFSET ERROR is the difference between the ideal input voltage (1⁄2LSB)and the actual input voltage that just causes a transition from an output code of zero to an output code of one.A D C 10321 10分销商库存信息:NATIONAL-SEMICONDUCTORADC10321CIVT ADC10321CIVT/NOPB。