JAN1N5526中文资料

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JAN2N6546中文资料

元器件交易网
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/525 Devices 2N6546 2N6547 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
ELECTRICAL CHARACTERISTICS (con’t)
Characteristห้องสมุดไป่ตู้cs Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio IC = 1 Adc; VCE = 2 Vdc IC = 5 Adc; VCE = 2 Vdc IC = 10 Adc; VCE = 2 Vdc Base-Emitter Saturated Voltage IB = 2.0 Adc; IC = 10 Adc Collector-Emitter Saturated Voltage IB = 2.0 Adc; IC = 10 Adc IB = 3.0 Adc; IC = 15 Adc hFE 15 12 6
0
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 600 Vdc; VBE = 1.5 Vdc VCE = 850 Vdc; VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 8 Vdc 2N6546 2N6547 2N6546 2N6547 V(BR)CEO 300 400 1.0 1.0 1.0 Vdc

JANKCA1N4148中文资料

MIL-PRF-19500/116L 8 June 2001SUPERSEDINGMIL-PRF-19500/116K 28 February 1997PERFORMANCE SPECIFICATIONSEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHINGTYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA,1N4148UBCC, 1N4148UBCD, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKCJANS1N4148-1 (see 6.4). Device types 1N914and 1N4531 are inactive for new design.This specification is approved for use by all Departments and Agencies of the Department of Defense.1. SCOPE1.1 Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device.1.2 Physical dimensions. See figures 1 (similar to DO-35), 2, 3, 4, and 5.1.3 Maximum ratings.TypeV (BR)V RWMI oT A = 25q CI FSM t p =1/120 s T STGT opZ 6JXR 6JLR 6JCV dcV (pk)mA A (pk)q C q C q C/W q C/W q C/W 1N914, UR 1007575 (1)1-65 to +200-65 to +17570N/A 1N4531, UR 10075125 (2)1-65 to +200-65 to +17570250N/A 1N4148-1, UR-110075200 (3)2-65 to +200-65 to +20070(leaded)N/A 1N4148UB,1N4148UB2,1N4148UB2R,1N4148UBCA,1N4148UBCC ,1N4148UBCD,10075200 (3)2-65 to +200-65 to +20070100(UR)150(1) Derate at 0.5 mA/G C above T A = 25G C.(2) Derate at 0.83 mA/G C above T A = 25G C.(3) Derate at 1.14 mA/G C above T A = 25G C.Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.AMSC N/AFSC 5961DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.INCH POUND The documentation and process conversion measures necessary to comply with thisrevision shall be completed by 8 September 2001.1.4 Primary electrical characteristics at T A = +25G C, unless otherwise indicated.Type (1)V F1V F2I R1 atV R= 20 V dcI R2 atV R = 75 V dc1N9141N4148-1 1N4531I F mA dc101010V dc0.80.80.8I F mA dc50100100V dc1.21.21.2nA dc2525252A dc0.50.50.5Type (1)I R3 atV R = 20 V dcT A = 150G CI R4 atV R = 75 V dcT A = 150G Ct fr atV fr = 5.0 V dc (pk) andI F = 50 mA dct rr1N9141N4148-1 1N45312A dc3535352A dc757575ns202020ns555(1) Electrical characteristics for surface mount devices are equivalent to the corresponding non-surface mountdevices unless otherwise noted.2. APPLICABLE DOCUMENTS2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed.2.2 Government documents.2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2).SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-19500-Semiconductor Devices, General Specification for.STANDARDDEPARTMENT OF DEFENSEMIL-STD-750-Test Methods for Semiconductor Devices.(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)2Types Dimensions Notes1, 2Ltr Inches MillimetersMin Max Min Max1N4148-1BL.140.180 3.56 4.5731N914BD.056.075 1.42 1.904LL 1.000 1.50025.4038.10LD.018.0220.460.5651N4531BL.080.120 2.03 3.05BD.050.075 1.27 1.904LL 1.000 1.50025.4038.10LD.018.0220.460.565NOTES:1. Dimensions are in inches.2. Metric equivalents are given for general information only.3. Ferrule is optional on types 1N4148-1 and 1N4531 for dimension BL.4. The minimum dimension of BD shall apply over at least .075 (1.90 mm) of dimension BL.5. The specified lead diameter applies in the zone between .050 (1.27 mm) for 1N914, and 1N4148-1,and .010 (0.25mm) for 1N4531 from the diode body to the end of the lead. Outside of this zone the lead shall not exceed BD.FIGURE 1. Semiconductor device, diode, types 1N914, 1N4148-1, and 1N4531.3Symbol DimensionsInches MillimetersMin Max Min MaxBD.063.067 1.60 1.70ECT.016.0220.410.55BL.130.146 3.30 3.70S.001 min0.03 minNOTES:1. Dimensions are in inches.2. Metric equivalents are given for general information only.FIGURE 2. Physical dimensions 1N914UR, 1N4148UR-1, AND 1N4531UR.41321N4148UBCA11N4148UB231131N4148UBD31N4148UBCC 22DimensionsSymbol Inches Millimeters Symbol Inches Millimeters Min Max Min Max Min Max Min Max A0.0460.0560.97 1.42D10.0710.078 1.81 2.01 A10.0170.0230.430.58D2B10.0160.0240.410.61D3B20.0160.0240.410.61E0.1150.125 2.82 3.18 B30.0160.0240.410.61E3- - -- - -D0.0850.105 2.41 2.67L10.0220.0380.560.96L20.0240.0360.610.81 NOTES:1. Dimensions are in inches.2. Metric equivalents are given for general information only.3. Ceramic package only.FIGURE 3. Physical dimensions, surface mount (UB versions).5DimensionsSymbol Inches Millimeters NoteMin Max Min MaxA0.0460.0560.97 1.42A10.0170.0350.430.89B10.0160.0240.410.61TypB20.0160.0240.410.61TypR20.0120.3TypD0.0850.108 2.41 2.74D10.0710.078 1.81 2.01D20.0350.0390.890.99D30.0850.108 2.41 2.74E0.1150.128 2.82 3.25E3- - -0.128- - - 3.25L10.0220.0380.560.96R30.008R0.2RR10.022R0.55RNOTES:1. Dimensions are in inches.2. Metric equivalents are given for general information only.FIGURE 4. Physical dimensions, surface mount (2 pin UB version).67DimensionsLtrInchesMillimeters MinMax MinMax A .0059.0061.150.155B.0130.0170.330.430NOTES:1.Dimensions are in inches.2.Metric equivalents are given for general information only.3.Element evaluation accomplished utilizing TO-5 package.4.The physical characteristics of the die are:Metallization:Top (anode): Al. Back (cathode): Au.Al thickness: 25,000 Å minimum. Gold thickness: 4,000 Å minimum.Chip thickness: .010 inches (.25 mm) H .002 inches (.05 mm).FIGURE 5. Physical dimensions, JANHCA and JANKCA die.2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.3. REQUIREMENTS3.1 General. The requirements for acquiring the product described herein shall consist of this document andMIL-PRF-19500.3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see4.2 and 6.3).3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows.VForward recovery voltage. Specified maximum forward voltage used to determine forward recovery frtime.LS Lead spacing distance between device body and electrical/mechanical contact on lead.UB Hermetic unleaded 3 terminal (LCC, Leadless Chip Carrier) package type.UR Unleaded round package type designation.3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified inMIL-PRF-19500, and on figures 1, 2, 3, 4, and 5 herein.3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).3.4.2 Diode construction. All devices (except UB version) shall be metallurgically bonded double plug construction in accordance with the requirements of category I, II, or III (see MIL-PRF-19500). The UB package shall be wire bonded, eutectically mounted devices.3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I.3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in4.4.2 and4.4.3 herein.3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container.3.7.1 UR devices. "UR" devices shall be marked with a cathode band only. Initial container package marking shall be in accordance with MIL-PRF-19500.3.7.2 UB devices. The part number may be reduced to J4148, JX4148, or JV4148. Manufacturers identification and date code shall be marked on the devices.3.7.3 UBR devices. The part number may be reduced to J4148, JX4148, or JV4148. Manufacturers identification and date code shall be marked on the devices.3.8 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. No color coding will be permitted. UB packages do not require polarity marking.3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance.894. VERIFICATION4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:a. Qualification inspection (see 4.2).b. Screening (see 4.3).c. Conformance inspection (see 4.4).4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein.4.2.1 Group E inspection. Group E inspection shall be in accordance with MIL-PRF-19500 and table II herein.4.3 Screening (JAN, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV ofMIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.Screen (see table IV Measurementof MIL-PRF-19500)JAN levelJANTX and JANTXV levels 3a Temperature cycling in accordance with MIL-PRF-19500 TX level.Temperature cycling3c (1)Thermal impedance (see 4.5.5)Thermal impedance (see 4.5.5)9Not applicable Not applicable10 (2)Not applicable Method 1038, condition A, t = 48 hours 11Not applicable I R1 and V F112Not applicable See 4.3.1, t = 48 hours13Not applicable(3) Subgroup 2 of table I herein;'I R1 = 100 percent of initial reading or 15 nA, whichever is greater; 'V F1 = 25 mV dc.PDA = 10 percent(1)Thermal impedance shall be performed any time after sealing provided temperature cycling is performed inaccordance with MIL-PRF-19500, screen 3 prior to this thermal test.(2)Test within 24 hours after removal from test.(3)When thermal impedance is performed prior to screen 13, it is not required to be repeated in screen 13.4.3.1 Burn-in test conditions. Burn-in conditions are as follows:Type T A +30q C r 5q C V RWM = 75 V (pk)f = 50 - 60 Hz T A = +30q C r 5q C1N914, 1N914UR I O = 75 mA I F =150 mA min 1N4531, 1N4531URI O = 125 mA I F = 175 mA min 1N4148-1, 1N4148UR-1, 1N4148UB,1N4148UB2, 1N4148UBR2I O = 200 mAI F = 200 mA min104.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein.4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with Table I, group A, subgroup 2 herein.4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIb (JANTX and JANTXV) of MIL-PRF-19500 and as specified herein. Electricalmeasurements (end-points) shall be in accordance with Table I, group A, subgroup 2 herein except for the thermal impedance test.4.4.2.1 Group B inspection, table VIb (JANTX, JANTXV) of MIL-PRF-19500.Subgroup Method ConditionsB22005I F = 100 mA, axial tensile stress = 8 lbs, T A = +150G C; (not applicable to UR or UB package). (This test shall be performed as the first test of subgroup 2).B3 1027T A = +30G C H 5G C, V RWM = 75 V(pk), f = 50-60 Hz (see 4.5.1); 1N914: I O = 5 mA,1N4531: I O = 125 mA, 1N4148-1: I O = 200 mA.B4 2075See 4.5.4 herein.B53101R 6JL = 250G C/W, .375 inch (9.52 mm) lead length (non-surface mount). or 4081R 6JL 100G C/W (UR), R 6JC = 150G C/W (UB).4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with Table I, group A, subgroup 2 herein except for the thermal impedance test.Subgroup Method Conditions C2 1056100 cycles.C22036Tension: Test condition A, t = 15 seconds, weight = 10 pounds. Lead fatigue:Test condition E. Terminal strength and lead fatigue not applicable to UB or UR devices.C6 1026T A = +30G C H 5G C, V RWM = 75 V(pk), f = 50-60 Hz (see 4.5.1), for:1N914I O = 75 mA.1N4531I O = 125 mA.1N4148-1I O = 200 mA.4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.4.5.1 Pulse measurements. Conditions for pulse measurements shall be specified in section 4 of MIL-STD-750.4.5.2 Life tests. AC tests shall be conducted with a half-sine wave of the peak voltage specified herein impressed across the diode in the reverse direction, followed by a half-sine waveform of the average rectified current specified herein. The forward conduction angle of the rectified current shall be not greater than 180 degree nor less than 150 degree.114.5.3 Forward recovery voltage and time. Forward recovery time shall be measured as the time interval between zero time and the point where the pulse has decreased to 110 percent of the steady-state value of V F when I F = 50 mA dc. The maximum rise time of the response detector shall be 1 ns.4.5.4 Decap internal visual scribe and break (not applicable to UB package). Scratch glass at cavity area with diamond scribe. Carefully snap open. Using 30X magnification examine the area where die was in contact with the plugs, verify footprint for minimum of 15 percent metallurgical bonding area. In addition, a cross sectional view may be used to verify consistency of construction. A cross sectional view shall be used exclusively for construction verification and shall not be used to verify bond integrity. The UB package shall employ the manufacturers’ normal delidding procedures.4.5.5 Thermal impedance (Z 6JX measurements). Thermal impedance measurements shall be in accordance method 3101 MIL-STD-750, and as follows.a.I H = 300 mA to 500 mA.b.t H = 10 ms.c.I M = 1 mA to 10 mA.d.t MD = 70 2s maximum.The maximum limit for Z 6JX under these test conditions is Z6JX= 70G C/W.4.5.5.1 For initial qualification or requalification. Read and record data (Z 6JX ) shall be supplied to the qualifying activity on one lot (random sample of 500 devices minimum) prior to shipment. Twenty two samples shall be serialized and provided to the qualifying activity for test correlation.4.5.6 Thermal resistance. Thermal resistance measurement shall be in accordance with method 3101MIL-STD-750, or method 4081 of MIL-STD-750. Forced moving air or draft shall not be permitted across the device during test. The maximum limit for R 6JL under these test conditions shall be as shown in group B of 4.4.2.1 and group E of table II. The following conditions shall apply when using method 3101:a.I H - - - - - - - - - - - - - - - - - - - - - - - - - - - 75 mA to 300 mA.b.t H - - - - - - - - - - - - - - - - - - - - - - - - - - - 25 seconds minimum.c.I M - - - - - - - - - - - - - - - - - - - - - - - - - - - 1 mA to 10 mA.d.t MD - - - - - - - - - - - - - - - - - - - - - - - - - - 70 2s maximum.4.5.6.1 Lead spacing for leaded devices:LS = Lead spacing = .375 inch (9.53 mm) as defined on figure 6.FIGURE 6. Mounting conditions.4.5.6.2 Temperature reference (T r) unleaded devices (UB, UR suffix). The temperature reference point shall be the hottest portion of the external surface. As an alternate, the temperature of a stream of liquid used to cool the device during the test may be used as the temperature reference point.12TABLE I. Group A inspection.MIL-STD-750LimitsInspection 1/Method Conditions Symbol Min Max Unit Subgroup 1Visual and mechanicalinspection2071Subgroup 2Thermal impedance3101See 4.5.5Z6JX70q C/WForward voltage4011IF = 10 mA dc V F10.8V dcBreakdown voltage4021IR = 100 P A dc V BR1100V dcReverse current 1N9141N45311N4148-14016DC methodV R = 20 V dcI R1252525nA dcnA dcnA dcReverse current4016DC methodV R = 75 V dcI R2500nA dcForward voltage4011I F = 50 mA dcI F = 100 mA dcI F = 100 mA dc V F21.21.21.2V dcV dcV dcSubgroup 3High temperatureoperation:T A = +150q CReverse current 1N9141N45311N4148-14016DC methodV R = 20 V dcI R335P A dcReverse current 1N9141N45311N4148-14016DC methodV R = 75 V dcI R4757575P A dcP A dcP A dcForward voltage 1N9141N45311N4148-14011IF = 10 mA dc V F30.80.80.8V dcV dcV dcSee footnote at end of table.13TABLE I. Group A inspection - Continued.MIL-STD-750LimitsInspection 1/Method Conditions Symbol Min Max Unit Subgroup 3 -ContinuedLow temperatureoperation:T A = -55q CForward voltage4011V F41N9141N4531 1N4148-1I F = 50 mA dcI F = 100 mA dcI F = 100 mA dc1.31.31.3V dcV dcV dcSubgroup 4Junction capacitance4001VR = 0 V dc, f = 1 MHz,V sig = 50 mV p-p maximumC11N9141N4531 1N4148-14.04.04.0pFpFpFJunction capacitance4001VR = 1.5 V dc, f = 1 MHz,V sig = 50 mV p-p maximumC2 2.8pFReverse recovery time4031Condition AC > 1 nF, I F = I R = 10 mA dc, R L = 100:r5%I R(REC) = 1.0 mA dc, R t 1000:.t rr5ns1N9141N45311N4148-1Subgroup 5Not applicableSee footnote at end of table.14TABLE I. Group A inspection - Continued.MIL-STD-750LimitsInspection 1/Method Conditions Symbol Min Max Unit Subgroup 6Surge current4066Condition A (sine wave)i f(surge) = 1 A (pk) for 1N914 and 1N4531i f(surge) = 2 A (pk) for 1N4148-1, UR and1N4148UB, I O = maximum rateddc current = 0V RM = 010 surges, 8.3 ms width each,one surge per minute, T A = +25q CorCondition B (square wave)I F(surge) = 0.704 A (pk) for1N914, 1N4531, and 1N4148UBI F(surge) = 1.41 A (pk) for1N4148-1t p = 8.3 msn = 10d.f. = 0.0055%T A = 25q CElectrical measurements See table I, subgroup 2Subgroup 7Forward recovery voltage and time 4026IF = 50 mA dc(see 4.5.2)V frt fr5.020V (pk)ns1/ For sampling plan, see MIL-PRF-19500.15TABLE II. Group E inspection (all quality levels) for qualification only.MIL-STD-750Inspection 1/Method Conditions Sampling plan Subgroup 145 devices c = 0 Thermal shockglass strain)10561,000 cyclesElectrical measurements See table I, subgroup 2Subgroup 245 devices c = 0Intermittentoperating lifeElectrical measurements 103710,000 cyclesSee table I, subgroup 2Subgroup 3Not applicableSubgroup 422 devices c = 0Thermal resistance surface mount 3101or4081R"JEC = 100q C/W (maximum) at zero lead length(for UR),R"JEC= 150q C/W (maximum) for UB.(see 4.5.6), +25q C d T R d +35q CThermal resistance leaded devices 3101or4081R"JEC = 250q C/W (maximum)+25q C d T R d +35q C, (see 4.5.6)t H t 25s in still air.Subgroup 522 devices c = 0 Monitored missiontemperature cycling1055Not required for UB suffix devices.Electrical measurements See table I, subgroup 2165. PACKAGING5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point’s packaging activity within the Military Department or Defense Agency, or within the Military Department’s System Command. Packaging data retrieval is available from the managing Military Department’s or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity.6. NOTES(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.6.2 Acquisition requirements. Acquisition documents must specify the following:a.Title, number, and date of this specification.b.Issue of DoDISS to be cited in the solicitation and, if required, the specific issue of individual documentsreferenced (see 2.2.1).c.Packaging requirements (see 5.1).d.Lead finish (see 3.4.1).e.Type designation and product assurance level.6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.6.4 Cross reference substitution information. The JANS version of 1N6638, 1N6642, or 1N6643(MIL-S-19500/578) is preferred in lieu of the JANS1N4148-1. The JANS 1N6638 or 1N6642 is substitutable for the JANS 1N4148-1 and shall be used in lieu of the JANS1N4148-1. A PIN for PIN replacement table follows, and these devices are directly interchangeable.JANS Non-preferredPINJANS supersededPIN1N4148-11N66381N6642176.5 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA1N4148) will be identified on the QPL.JANC ordering informationPIN Manufacturer558011N4148-1 1N4148-1JANHCA1N4148 JANKCA1N41486.6 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes.Custodians:Preparing activity Army - CR DLA - CCNavy - NWAir Force - 11DLA - CC(Project 5961-2422) Review activities:Army - AR, MI, SMNavy - AS, CG, MCAir Force - 19, 9918STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSALINSTRUCTIONS1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revisionletter should be given.2. The submitter of this form must complete blocks 4, 5, 6, and 7.3. The preparing activity must provide a reply within 30 days from receipt of the form.NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements.I RECOMMEND A CHANGE:1. DOCUMENT NUMBERMIL-PRF-19500/116K2. DOCUMENT DATE13 July 20013. DOCUMENT TITLE SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N914, 1N914UR, 1N4148-1,1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UBR2, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)5. REASON FOR RECOMMENDATION6. SUBMITTERa. NAME (Last, First, Middle initial)b. ORGANIZATIONc. ADDRESS (Include Zip Code)d. TELEPHONE (Include Area Code)COMMERCIALDSNFAXEMAIL7. DATE SUBMITTED8. PREPARING ACTIVITYa. Point of Contact Alan Baroneb. TELEPHONECommercial DSN FAX EMAIL614-692-0510 850-0510 614-692-6939 alan.barone@c. ADDRESSDefense Supply Center, Columbus ATTN: DSCC-VACP.O. Box 3990Columbus, OH 43216-5000IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM)8725 John J. Kingman, Suite 2533Fort Belvoir, VA 22060-6221Telephone (703) 767-6888 DSN 427-6888DD Form 1426, Feb 1999 (EG) Previous editions are obsolete WHS/DIOR, Feb 99。

CD5526B中文资料

REGULATION FACTOR ∆VZ VOLTS (Note 3) 0.90 0.90 0.90 0.75 0.60 0.65 0.30 0.20 0.10 0.05 0.05 0.05 0.10 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.25 0.30 0.35 0.40 0.45 0.50
元器件交易网
• 1N5518B THRU 1N5546B AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/437 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N5518B THRU 1N5546B • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW
1 .1 .2 .3 .4 .5 1 2 5 10 20 OPERATING CURRENT lZT (mA) 30 40 50 100
FIGURE 3
ZENER IMPEDANCE VS. OPERATING CURRENT
23 MILS
元器件交易网
CD5518B
thru
CD5546B
1000
500 400 300 200 ZENER IMPEDANCE ZZT (OHMS)
3. 3

1N5542B中文资料

26 24 22 18 22 26 30 30 30 35 40 45 60 80 90 90 100 100 100 100 100 100 100 100 100 100 100 100 100
0.90 0.90 0.90 1.0 1.5 2.0 3.0 4.5 5.5 6.0 6.5 7.0 8.0 9.0 9.5 10.5 11.5 12.5 13.0 14.0 15.0 16.0 17.0 18.0 20.0 21.0 23.0 24.0 28.0
NOTE 2 NOTE 3 NOTE 4 NOTE 5
Reverse leakage currents are measured at VR as shown on the table. ∆VZ is the maximum difference between VZ at lZT and VZ at lZL measured with the device junction in thermal equilibrium at the ambient temperature of +25°C +3°C.
CASE: Hermetically sealed glass case. DO – 35 outline. LEAD MATERIAL: Copper clad steel. LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 250 ˚C/W maximum at L = .375 inch THERMAL IMPEDANCE: (ZOJX): 35 ˚C/W maximum POLARITY: Diode to be operated with the banded (cathode) end positive. MOUNTING POSITION: Any.

JANTXV1N5711UR-1中文资料

VR – REVERSE VOLTAGE (V) (PULSED) Figure 2. CDLL2810 and CDLL5712 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (978) 689-0803 WEBSITE:
145
元器件交易网
1N5711UR-1, 1N5712UR-1, 1N6857UR-1, 1N6858UR-1, CDLL5711, CDLL5712, CDLL2810, CDLL6263, CDLL6857 and CDLL6858
VR – REVERSE VOLTAGE (V) (PULSED) Figure 4. CDLL5711 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures.
IF – FORWARD CURRENT (mA) (PULSED) Figure 5. Typical Dynamic Resistance (RD) vs. Forward Current (IF).
50 IF – FORWARD CURRENT (mA) IR – REVERSE CURRENT (nA)
100,000 1000 RD – DYNAMIC RESISTANCE (!!) 0 10 20 30 40 50 60
10 5
10,000

JAN1N5610中文资料

• 1500 Watts for 1 ms Pulse Power Capability • Small Physical Size• Designed for MIL-STD-704A ApplicationsDescriptionZener diodes with a high surge capability qualified to MIL-S-19500/434Absolute Maximum Ratings ( @ 25°C unless noted )1N5610 1N5611 1N5612 1N5613Forward Surge Current, 200 A 200 A 200 A 200 A Zener Surge Current, @ 25C 32.0 A 24.0 A 19.0 A 5.7 A Zener Surge Current @ 150C 5.5 A 4.8 A 3.2 A 1.0 A Storage and Operating Temperature -65C to + 175CZener Voltage See Electrical Characteristics Surge Power See GraphsElectrical Characteristics (T = 25°C unless otherwise noted)Min. Zener Voltage δVz @ 1Ma Max. Zener Voltage λVz @ Is MAX.Reverse LeakageCurrent I R @ V RMAX.Forward V ξ@ 100 ATypical Temp.Coefficient DEVICE TYPEVolts Volts Amps µAVolts Volts % / °C 1N5610*33.047.532.0 5.030.5 4.8.0931N5611*43.763.524.0 5.040.3 4.8.0941N5612*54.078.519.0 5.049.0 4.8.0961N5613*1912655.75.01754.8.100NOTES: * Available as JAN, JANTX and JANTXVδ Duration of applied current ≤300 ms, Duty cycle ≤2%.λ Use a pulse which decays exponentially to 50 % of peak value during 1 ms. (See “ Pulse Waveform “ graph). ξ Peak Sinusoidal surge current of 8.3 ms duration, non repetitivePOWER ZENER RECTIFIERJAN, JANTX, JANTXVApplicationsVoltage transients can be suppressed with series elements, shunt elements or a combination of both. These elements may be passive or active. For low & medium power applications, a series resistor & zener clamp offer several attractive features:1. Simplicity of design.2. High reliability.3. Fast response time.The 1N5610 series will suppress the following transients (defined by MIL-S-704A) without using any series limiting resistance; (except as noted in line #3 below)1. All 600 V transients (category 1 in chart below).2. All 80 V transients except those generated by the main voltage regulator (category 2 in chart below).3. Over-voltage transients from the main voltage regulator (category 3 in chart below) will be suppressed if:a. A 20 ohm series limiting resistor is used, or-b. No series resistance is used & the zener is protected within 500 µs, using (for example) an SCR crowbar.The above statements are based on the source impedances & dv/dt characteristics as given in ARINC* spec# 413; entitled “Guidance for Aircraft Electrical Power Utilization & Transient Protection. This report further defines MIL-STD-704A in regard to large aircraft electrical systems.These surge suppressors are useful in a varierty of other applications where semiconductor devices must function in an environment subject to extremely high, but short term surges.* ARINC stands for Aeronautical Radio Incorporated; Annapolis, Maryland 21401DEVICE OUTLINEDIE OUTLINEFIGURE 1FIGURE 2FIGURE 3。

JANTX1N6642U中文资料

1000
and
IN6643U&US
100 IF - Forward Current - (mA)
10
0ºC 15
100
ºC
0.1 .2 .3 .4 .5 .6 .7 .8 .9 VF - Forward Voltage (V) FIGURE 2 Typical Forward Current vs Forward Voltage 1.0 1.1 1.2
158
1N6638U & US 1N6642U & US 1N6643U & US
35 25 50
0.5 0.5 0.5
50 50 75
100 100 160
2.5 5.0 5.0
2.0 2.8 2.8
MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately + 4PPM / °C. The COE of the Mounting Surface System should be selected to provide a suitable match with this device.
1000
100
150ºC
IR - Reverse Current - (µA)
10
100º
1
C
0.1
25ºC
.01
-65ºC
-65ºC
12Βιβλιοθήκη ºCNOTE :All temperatures shown on graphs are junction temperatures

JANTX1N4568AUR-1中文资料

CDI TYPE NUMBER ZENER TEST CURRENT l ZT EFFECTIVE TEMPERATURE COEFFICIENT VOLTAGE TEMPERATURE STABILITY ³VZT MAX -55° to + 100° (Note 1) mV 48 100 24 50 10 20 5 10 2.5 5 48 100 24 50 10 20 5 10 2.5 5 48 100 24 50 10 20 5 10 2.5 5 48 100 24 50 10 20 5 10 2.5 5 TEMPERATURE RANGE MAX.DYNAMIC ZENER IMPEDANCE ZZT (Note 2) °C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C 0 to + 75°C -55 to + 100°C OHMS 200 200 200 200 200 200 200 200 200 200 100 100 100 100 100 100 100 100 100 100 50 50 50 50 50 50 50 50 50 50 25 25 25 25 25 25 25 25 25 25

JAN2N5662资料

ICBO
ON CHARACTERISTICS (5)
2N5660, 2N5662 2N5661, 2N5663 2N5660, 2N5662 2N5661, 2N5663 All Types All Types
hFE
40 25 40 25 15 5.0
120 75
VCE(sat)
0.4 0.8 1.2 1.5
SWITCHING CHARACTERISTICS
Turn-On Time VCC = 100 Vdc; IC = 0.5 Adc; IB1 = 15 Adc 2N5660, 2N5662 VCC = 100 Vdc; IC = 0.5 Adc; IB1 = 25 Adc 2N5661, 2N5663 Turn-Off Time VCC = 100 Vdc; IC = 0.5 Adc; IB1 = -IB2 = 15 Adc 2N5660, 2N5662 VCC = 100 Vdc; IC = 0.5 Adc; IB1 = -IB2 = 25 Adc 2N5661, 2N5663
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
Symbol
Unit
Vdc Vdc Vdc Vdc Adc Adc
TO-66* (TO-213AA) 2N5660, 2N5661
W W 0 C
THERMAL CHARACTERISTICS Characteristics

JANTXV1N5712UR-1中文资料

MILLIMETERS INCHES
DIM MIN MAX MIN MAX
D 1.60 1.70 0.063 0.067
F 0.41 0.55 0.016 0.022
G 3.30 3.70 .130 .146
G1 2.54 REF. .100 REF.
S
0.03 MIN. .001 MIN.
FIGURE 1
1000
100
10
1.0 0 5.0 10 15 20 25 30 VR – REVERSE VOLTAGE (V) (PULSED) Figure 2. CDLL2810 and CDLL5712 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures.
100,000
10,000
1000
1
10
1 0 10 20 30 40 50 60 VR – REVERSE VOLTAGE (V) (PULSED) Figure 4. CDLL5711 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures.
DESIGN DATA
CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC): 100 °C/W maximum at L = 0 inch THERMAL IMPEDANCE: (ZOJX): 40 °C/W maximum

JANTX1N4099中文资料

DIM D F G G1 S
MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.70 0.063 0.067 0.41 0.55 0.016 0.022 3.30 3.70 .130 .146 2.54 REF. .100 REF. 0.03 MIN. .001 MIN.
1N4099UR-1 thru 1N4135UR-1 and CDLL4099 thru CDLL4135
• DOU-
µA
250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250
Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 500mW @ TEC = +125°C Power Derating: 10mW/ °C above TEC = +125°C Forward Derating @ 200 mA: 1.1 Volts maximum ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
元器件交易网
• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND
JANS
PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED MAXIMUM RATINGS

JANTXV1N5525中文资料

YPE NUMBER
NOMINAL ZENER ZENER TEST VOLTAGE CURRENT VZ@ 1ZT (NOTE 2) VOLTS 1ZT
MAX. ZENER IMPEDANCE B-C-D SUFFIX ZZT @ 1ZT (NOTE 3) OHMS
thru
FIGURE 2
CDLL5546D
Pd, Rated Power Dissipation (mW)
500 400 300 200 100 0 0 25 50 75 100 125 150 175
TEC , End cap temperature (C°)
POWER DERATING CURVE
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34) LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 100 °C/W maximum at L = 0 inch THERMAL IMPEDANCE: (ZOJX): 35 °C/W maximum POLARITY: Diode to be operated with the banded (cathode) end positive.
26 24 22 18 22 26 30 30 30 35 40 45 60 80 90 90 100 100 100 100 100 100 100 100 100 100 100 100 100
0.90 0.90 0.90 1.0 1.5 2.0 3.0 4.5 5.5 6.0 6.5 7.0 8.0 9.0 9.5 10.5 11.5 12.5 13.0 14.0 15.0 16.0 17.0 18.0 20.0 21.0 23.0 24.0 28.0

1N4626-1中文资料

FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass case. DO – 35 outline. LEAD MATERIAL: Copper clad steel. LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 250 ˚C/W maximum at L = .375 inch THERMAL IMPEDANCE: (ZOJX): 35 ˚C/W maximum POLARITY: Diode to be operated with the banded (cathode) end positive. MOUNTING POSITION: ANY.
元器件交易网
• 1N4614-1THRU 1N4627-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LOW CURRENT OPERATION AT 250 µA • LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED
元器件交易网
thru 1N4627 INCLUDING -1 VERSIONS
400
1N4614
0JL, Junction to Lead Thermal Resistance (°C/W)
300
200
100
0
0.2
0.4
0.6
0.8
1.0
L, lead Length to Heat Sink (iNCHES)

JAN4N24A中文资料

3 - 10
元器件交易网 4N22A, 4N23A, and 4N24A
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
*ELECTRICAL CHARACTERISTICS INPUT LED TA = 25°C Unless otherwise specified
4N22A
1
4N23A
IC(ON)
2.5
4N24A
4
On State Collector Current +100°C
4N22A
1
4N23A
IC(ON)
2.5
4N24A
4
Off State Collector Current Off State Collector Current
+25°C +100°C
V(BR)CBO
35
V(BR)CEO
35
V(BR)EBO
4
MAX
UNITS
V V V
TEST CONDITIONS
IC = 100µA, IB = 0, IF = 0 IC = 1mA, IB = 0, IF = 0 IC = 0, IE = 100µA, IF = 0
NOTE
*COUPLED CHARACTERISTICS TA = 25°C Unless otherwise specified
*ABSOLUTE MAXIMUM RATINGS Input to Output Voltage.............................................................................................................................................................±1kV Emitter-Collector Voltage..............................................................................................................................................................4V Collector-Emitter Voltage............................................................................................................................................................35V Collector-Base Voltage ...............................................................................................................................................................35V Reverse Input Voltage .................................................................................................................................................................2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ....................................... 40mA Peak Forward Input Current (Value applies for tw < 1µs, PRR < 300 pps) .................................................................................1A Continuous Collector Current ................................................................................................................................................. 50mA Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................... 300mW Storage Temperature............................................................................................................................................. -65°C to +125°C Operating Free-Air Temperature Range ............................................................................................................... -55°C to +125°C Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ..................................................................................240°C

JANTX1N4614UR-1中文资料

FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34) LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 100 °C/W maximum at L = 0 inch THERMAL IMPEDANCE: (ZJX): 35 °C/W maximum POLARITY: Diode to be operated with the banded (cathode) end positive. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/°C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device.
NOTE 1
The CDI type numbers shown above have a Zener voltage tolerance of +5.0%. Nominal Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25°C + 3°C. "C" suffix denotes a + 2% tolerance and "D" suffix denotes a + 1% tolerance. Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal to 10% of IZT.

1N5226中文资料

max. .150 (3.8)
max. ∅.020 (0.52)
MECHANICAL DATA
Dimensions are in inches and (millimeters)
Case: DO-35 Glass Case Weight: approx. 0.13 g
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
元器件交易网
RATINGS AND CHARACTERISTIC CURVES 1N5225 THRU 1N5267
SYMBOL
MIN.
TYP.
MAX.
UNIT
Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 200 mA
RΘJA VF
– –
– –
300(1) 1.1
°C/W Volts
NOTES: Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
元器件交易网
1N5225 THRU 1N5267
ZENER DIODES

DO-35
min. 1.083 (27.5)
♦ Silicon Planar Power Zener Diodes ♦ Standard Zener voltage tolerance is ± 5% with a “B” suffix. Other tolerances are available upon request.

JAN2N5665中文资料

120101 Page 2 of 2
V(BR)EBO 2N5664, 2N5666, S 2N5665, 2N5667, S ICES
Vdc µAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 1 of 2
VCEO VCBO VEBO IB IC 200 250 6.0 1.0 5.0 2N5664 2N5666, S 2N5665 2N5667, S 2.5 (1) 1.2 (2) (3) 30 15 (4) -65 to +200 300 400 Vdc Vdc Vdc Adc Adc
TO-66* (TO-213AA) 2N5664, 2N5665
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Emitter Cutoff Current VCE = 200 Vdc VCE = 300 Vdc 2N5664, 2N5666, S 2N5665, 2N5667, S V(BR)CER 250 400 6.0 0.2 0.2 Vdc
hfe
Cobo
2.0
7.0 120 pF
SWITCHING CHARACTERISTICS
Turn-On Time VCC = 100 Vdc; IC = 1.0 Adc; IB1 = 30 mAdc Turn-Off Time VCC = 30 Vdc; IC = 1.0 Adc; IB1 = -IB2 = 50 mAdc 2N5664, 2N5666, S 2N5665, 2N5667, S

JANTXV1N5543资料

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (978) 689-0803 WEBSITE:
143
元器件交易网
CDLL5518
JANTX AND JANTXV
1N5518BUR-1 thru 1N5546BUR-1 and CDLL5518 thru CDLL5546D
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +125°C DC Power Dissipation: 500 mW @ TEC = +125°C Power Derating: 10 mW / °C above TEC = +125°C Forward Voltage @ 200mA: 1.1 volts maximum ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
mA
µ Adc
5.0 3.0 1.0 3.0 2.0 2.0 2.0 1.0 1.0 0.5 0.5 0.1 0.05 0.05 0.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01
mA
mA
CDLL5518B CDLL5519B CDLL5520B CDLL5521B CDLL5522B CDLL5523B CDLL5524B CDLL5525B CDLL5526B CDLL5527B CDLL5528B CDLL5529B CDLL5530B CDLL5531B CDLL5532B CDLL5533B CDLL5534B CDLL5535B CDLL5536B CDLL5537B CDLL5538B CDLL5539B CDLL5540B CDLL5541B CDLL5542B CDLL5543B CDLL5544B CDLL5545B CDLL5546B