BUK762R0-40C,118;中文规格书,Datasheet资料

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B0540WS-7;中文规格书,Datasheet资料

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERFeatures• Low Forward Voltage Drop• Guard Ring Construction for Transient Protection • High Conductance• Lead Free By Design/RoHS Compliant (Note 3) • "Green" Device (Note 4)Mechanical Data• Case: SOD-323• Case Material: Molded Plastic, "Green" Molding Compound.UL Flammability Rating Classification 94V-0• Moisture Sensitivity: Level 1 per J-STD-020D• Polarity: Cathode Band• Terminals: Finish - Matte Tin Annealed Over Alloy 42leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 2• Ordering Information: See Page 2• Weight: 0.004 grams (approximate)Top ViewMaximum Ratings@T A = 25°C unless otherwise specifiedSingle phase, half wave, 60Hz, resistive or inductive load.For capacitance load, derate current by 20%.Characteristic Symbol Value UnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWMV R40 VRMS Reverse Voltage V R(RMS)28 V Average Rectified Output Current I O0.5 ANon-Repetitive Peak Forward Surge Current8.3ms single half sine-wave superimposed on rated load I FSM3 A Thermal CharacteristicsCharacteristic Symbol Value Unit Power Dissipation (Note 1) P D235 mW Typical Thermal Resistance Junction to Ambient (Note 1) RθJA426 °C/W Operating and Storage Temperature Range T J, T STG-40 to +125 °CElectrical Characteristics@T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 2) V(BR)R40 ⎯⎯V I R = 1mAForward Voltage V F⎯285480300550mVI F = 10mAI F = 500mAReverse Current (Note 2) I R ⎯⎯1.02.035μAμAV R = 10VV R = 30VTotal Capacitance C T ⎯⎯12520⎯⎯pFpFV R = 0V, f = 1.0MHzV R = 10V, f = 1.0MHzNotes: 1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at /datasheets/ap02001.pdf.2. Short duration pulse test used to minimize self-heating effect.3. No purposefully added Lead.4. Diodes Inc.'s "Green" policy can be found on our website at /products/lead_free/index.php.Please click here to visit our online spice models database.10100V, INSTANTANEOUS REVERSE VOLTAGE (V)Fig. 2 Typical Reverse CharacteristicsRI,INSTANTANEOUSFORWARDCURRENT(mA)FV, INSTANTANEOUS FORWARD VOLTAGE (V)Fig. 1 Typical Forward CharacteristicsF100C,TOTALCAPACITANCE(pF)TV, DC REVERSE VOLTAGE (V)Fig. 3 Total Capacitance vs. Reverse VoltageR0.250.50050100I,AVE150RAGEFORWARDCURRENT(A)F(AV)T, TERMINAL TEMPERATURE (C)Fig. 4 Forward Current Derating CurveT°0.751.02575125Ordering Information(Note 5)Part Number Case PackagingB0540WS-7 SOD-323 3000/Tape & ReelNotes: 5. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationSF SF = Product Type Marking CodePackage Outline DimensionsSuggested Pad LayoutIMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.SOD-323 Dim Min Max A 0.25 0.35 B 1.20 1.40 C 2.30 2.70 H 1.60 1.80 J 0.00 0.10 K 1.0 1.1 L0.20 0.40 M 0.10 0.15α0° 8°All Dimensions in mmDimensions Value (in mm)Z 3.75 G 1.05 X 0.65 Y 1.35 C 2.40分销商库存信息: DIODESB0540WS-7。

ATSTK520;中文规格书,Datasheet资料

STK520 .............................................................................................. User GuideSTK520 User Guide 3Table of ContentsSection 1Introduction............................................................................................1-2Section 2Using the STK520 Top Module.............................................................2-42.1Connecting the STK520 to the STK500 Starter Kit..................................2-42.1.1Placing an AT90PWM3 on the STK520.............................................2-42.1.2Placing an AT90PWM2 on the STK520.............................................2-52.2Programming the AVR..............................................................................2-72.2.1In-System Programming....................................................................2-72.2.2High-voltage Programming................................................................2-82.3JTAGICE mkII Connector.........................................................................2-92.4STK520 Jumpers, Leds & Test Points....................................................2-112.5DALI Interface.........................................................................................2-122.6Potentiometer.........................................................................................2-13Section 3Troubleshooting Guide........................................................................3-14Section 4Technical Specifications......................................................................4-16Section 5Technical Support ...............................................................................5-17Section 6Complete Schematics .........................................................................6-20IntroductionSection 1IntroductionThe STK520 board is a top module designed to add AT90PWM family support to theSTK500 development board from Atmel Corporation.The STK520 includes connectors and hardware allowing full utilization of the new fea-tures of the AT90PWM, while the Zero Insertion Force (ZIF) socket allows easy to use ofSO24 & SO32 packages for prototyping.This user guide acts as a general getting started guide as well as a complete technicalreference for advanced users.Notice that in this guide, the word AVR is used to refer to the target component(AT90PWM2, AT90PWM3...)Figure 1-1. STK520 Top Module for STK500Introduction1.1Features STK520 is a New Member of the Successful STK500 Starter Kit Family.Supports the AT90PWM2 & AT90PWM3.DALI Hardware Interface.Supported by AVR Studio® 4.Zero Insertion Force Socket for SO24 & SO32 Packages.High Voltage Parallell Programming.Serial Programming.DALI Peripherals can be Disconnected from the Device.6 Pin Connector for On-chip Debugging using JTAG MKII Emulator.Potentiometer for the Demo Application.Quick Reference to all Switches and Jumpers in the Silk-Screen of the PCB.Using the STK520 Top Module Section 2Using the STK520 Top Module2.1Connecting the STK520 to theSTK500 Starter Kit Connect the STK520 to the STK500 expansion header 0 and 1. It is important that the top module is connected in the correct orientation as shown in Figure 2-1. The EXPAND0 written on the STK520 top module should match the EXPAND0 written beside the expansion header on the STK500 board.Figure 2-1. Connecting STK520 to the STK500 BoardNote:Connecting the STK520 with wrong orientation may damage the board.2.1.1Placing anAT90PWM3 on theSTK520The STK520 contains both a ZIF socket for a SO32 package. Care should be taken so that the device is mounted with the correct orientation. Figure 2-2 shows the location of pin1 for the ZIF socket.Using the STK520 Top ModuleFigure 2-2. Pin1 on ZIF SocketCaution: Do not mount an AT90PWM3 on the STK520 at the same time as an AVR ismounted on the STK500 board or at the same time as an AT90PWM2 is mounted on theSTK520 board. None of the devices might work as intended.2.1.2Placing anAT90PWM2 on theSTK520The STK520 contains both a ZIF socket for a SO24 package. Care should be taken so that the device is mounted with the correct orientation. Figure 2-2 shows the location of pin1 for the ZIF socket.Figure 2-3. Pin1 on ZIF SocketPIN1PIN1Using the STK520 Top Module Caution: Do not mount an AT90PWM2 on the STK520 at the same time as an AVR is mounted on the STK500 board or at the same time as an AT90PWM3 is mounted on the STK520 board. None of the devices might work as intended.Using the STK520 Top Module2.2Programming theAVR The AVR (AT90PWM2, AT90PWM3...) can be programmed using both SPI and High-voltage Parallel Programming. This section will explain how to connect the programming cables to successfully use one of these two modes. The AVR Studio STK500 software is used in the same way as for other AVR partsNote:The AT90PWM3 also support Self Programming, See AVR109 application note for more information on this topic.2.2.1In-SystemProgramming Figure 2-4. In-System ProgrammingTo program the AT90PWM3 using ISP Programming mode, connect the 6-wire cable between the ISP6PIN connector on the STK500 board and the ISP connector on the STK520 board as shown in Figure 2-4. The device can be programmed using the Serial Programming mode in the AVR Studio4 STK500 software.Note:See STK500 User Guide for information on how to use the STK500 front-end software for ISP Programming.Using the STK520 Top Module2.2.2High-voltageProgramming Figure 2-5. High-voltage (Parallel) ProgrammingTo program the AVR using High-voltage (Parallel) Programming, connect the PROGC-TRL to PORTD and PROGDATA to PORTB on the STK500 as shown in Figure 2-5. Make sure that the TOSC-switch is placed in the XTAL position.As described in the STK500 User Guide (jumper settings), mount the BSEL2 jumper in order to High-voltage Program the ATmega devices. This setting also applies to High-voltage Programming of the AVR.The device can now be programmed using the High-voltage Programming mode in AVR Studio STK500 software.Note:See the STK500 User Guide for information on how to use the STK500 front-end software in High-voltage Programming mode.Note:For the High-voltage Programming mode to function correctly, the target voltage must be higher than 4.5V.Using the STK520 Top Module2.3JTAGICE mkIIConnector See the following document :“JTAGICE mkII Quick Start Guide” which purpose is “Connecting to a target board with the AVR JTAGICE mkII”.This note explains which signals are required for ISP and which signals are required for debugWIRE.Figure 2-6 shows how to connect the JTAGICE mkII probe on the STK520 board. Figure 2-6. Connecting JTAG ICE to the STK520The ISP connector is used for the AT90PWM3 built-in debugWire interface. The pin out of the connector is shown in Table 2-1 and is compliant with the pin out of the JTAG ICE available from Atmel. Connecting a JTAG ICE to this connector allows On-chip Debug-ging of the AT90PWM3.More information about the JTAG ICE and On-chip Debugging can be found in the AVR JTAG ICE User Guide, which is available at the Atmel web site, .分销商库存信息: ATMELATSTK520。

BUK130-50DL,118;中文规格书,Datasheet资料

Philips Semiconductors Product specificationLogic level TOPFETBUK130-50DLSMD version of BUK119-50DLDESCRIPTIONQUICK REFERENCE DATAMonolithic temperature andSYMBOL PARAMETERMAX.UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source voltage 50V assembled in a 3 pin surface mount I D Continuous drain current 20A plastic package.P D Total power dissipation90W T jContinuous junction temperature 150˚C APPLICATIONSR DS(ON)Drain-source on-state resistance 28m ΩI ISLInput supply currentV IS = 5 V650µAlamps motors solenoids heatersapplications.FEATURESTrenchMOS output stage Current limitingOverload protectionOvertemperature protectionProtection latched reset by input 5 V logic compatible input level Control of output stage and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controllerESD protection on all pins Overvoltage clamping for turn off of inductive loadsPINNING - SOT404PIN CONFIGURATIONSYMBOLPhilips Semiconductors Product specification Logic level TOPFET BUK130-50DL SMD version of BUK119-50DLLIMITING VALUESLimiting values in accordance with the Absolute Maximum Rating System (IEC 134)SYMBOL PARAMETER CONDITIONS MIN.MAX.UNITVDSContinuous drain source voltage1-50VI D Continuous drain current VIS= 5 V; Tmb=25˚C-self -AlimitedI D Continuous drain current VIS= 5 V; Tmb ≤121˚C-20AIIContinuous input current-55mAIIRMRepetitive peak input currentδ≤ 0.1, tp = 300 µs-5050mAPD Total power dissipation Tmb≤ 25˚C-90WTstgStorage temperature-55175˚CTjContinuous junction temperature2normal operation-150˚CTsoldCase temperature during soldering-260˚C ESD LIMITING VALUESYMBOL PARAMETER CONDITIONS MIN.MAX.UNITVCElectrostatic discharge capacitor Human body model;-2kVvoltage C = 250 pF; R = 1.5 kΩOVERVOLTAGE CLAMPING LIMITING VALUESAt a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN.MAX.UNITInductive load turn-off IDM = 20 A; VDD≤ 20 VEDSM Non-repetitive clamping energy Tmb≤ 25˚C-350mJEDRM Repetitive clamping energy Tmb≤ 95˚C; f = 250 Hz-45mJOVERLOAD PROTECTION LIMITING VALUEWith an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload - overtemperature and short circuit load.SYMBOL PARAMETER REQUIRED CONDITION MIN.MAX.UNITVDS Drain source voltage3 4 V ≤ VIS≤ 5.5 V035VTHERMAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITThermal resistanceRth j-mbJunction to mounting base-- 1.25 1.39K/WRth j-aJunction to ambient minimum footprint FR4 PCB-50-K/W 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO)the over temperature trip operates to protect the switch.3 All control logic and protection functions are disabled during conduction of the source drain diode.Philips Semiconductors Product specification Logic level TOPFET BUK130-50DL SMD version of BUK119-50DLOUTPUT CHARACTERISTICSLimits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb= 25˚C unless otherwise specifiedSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT Off-state VIS= 0 VV(CL)DSS Drain-source clamping voltage ID= 10 mA50--VIDM= 4 A; tp≤ 300 µs; δ≤ 0.01506070VI DSS Drain source leakage current VDS= 40 V--100µATmb= 25˚C-0.110µAOn-state VIS≥ 4.4 V; tp≤ 300 µs; δ≤ 0.01RDS(ON)Drain-source resistance IDM= 10 A--52mΩTmb= 25˚C-2228mΩOVERLOAD CHARACTERISTICSVIS = 5 V; Tmb= 25˚C unless otherwise specified.SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT Short circuit loadI D Drain current limiting VDS= 13 V28.54357A4.4 V ≤ VIS≤ 5.5 V;21-65A-40˚C ≤ Tmb≤ 150˚COverload protectionPD(TO)Overload power threshold device trips if PD> PD(TO)75185250WTDSCCharacteristic time which determines trip time1200380600µsOvertemperature protectionTj(TO)Threshold junction150170-˚C temperature21 Trip time td sc varies with overload dissipation PDaccording to the formula td sc≈ TDSC/ ln[ PD/ PD(TO)].2 This is independent of the dV/dt of input voltage VIS.Philips Semiconductors Product specification Logic level TOPFET BUK130-50DL SMD version of BUK119-50DLINPUT CHARACTERISTICSThe supply for the logic and overload protection is taken from the input.Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb= 25˚C unless otherwise specifiedSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITVIS(TO)Input threshold voltage VDS= 5 V; ID= 1 mA0.6- 2.4VTmb= 25˚C 1.1 1.6 2.1VI IS Input supply current normal operation; VIS= 5 V100220400µAVIS= 4 V80195330µAI ISL Input supply current protection latched; VIS= 5 V200400650µAVIS= 3 V130250430µAVISR Protection reset voltage1reset time tr≥ 100 µs 1.52 2.9Vt lr Latch reset time VIS1= 5 V, VIS2< 1 V1040100µsV(CL)IS Input clamping voltage II= 1.5 mA 5.5-8.5VRIG Input series resistance2Tmb= 25˚C-33-kΩto gate of power MOSFETSWITCHING CHARACTERISTICST mb = 25˚C; VDD= 13 V; resistive load RL= 4 Ω. Refer to waveform figure and test circuit.SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITtd on Turn-on delay time VIS= 5 V-2550µstrRise time-50100µstd off Turn-off delay time VIS= 0 V-60120µstfFall time-50100µs1 The input voltage below which the overload protection circuits will be reset.2 Not directly measureable from device terminals.Philips Semiconductors Product specificationLogic level TOPFETBUK130-50DLSMD version of BUK119-50DLMECHANICAL DATA1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.4 gFor soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.Philips Semiconductors Product specification Logic level TOPFET BUK130-50DL SMD version of BUK119-50DLDEFINITIONSDATA SHEET STATUSDATA SHEET PRODUCT DEFINITIONSSTATUS1STATUS2Objective data Development This data sheet contains data from the objective specification forproduct development. Philips Semiconductors reserves the right tochange the specification in any manner without noticePreliminary data Qualification This data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification withoutnotice, in ordere to improve the design and supply the best possibleproductProduct data Production This data sheet contains data from the product specification. PhilipsSemiconductors reserves the right to make changes at any time inorder to improve the design, manufacturing and supply. Changes willbe communicated according to the Customer Product/ProcessChange Notification (CPCN) procedure SNW-SQ-650ALimiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.Philips Electronics N.V. 2001All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.1 Please consult the most recently issued datasheet before initiating or completing a design.2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information isavailable on the Internet at URL .分销商库存信息: NXPBUK130-50DL,118。

PMEG4020ER,115;中文规格书,Datasheet资料

PMEG4020ER_1
Product data sheet
/
Rev. 01 — 22 October 2009
© NXP B.V. 2009. All rights reserved.
4 of 13
NXP Semiconductors
PMEG4020ER
2 A low VF MEGA Schottky barrier rectiﬁer
7. Characteristics
Table 7. Characteristics Tj = 25 °C unless otherwise speciﬁed.
Symbol Parameter
Conditions
VF
forward voltage
IF = 0.1 A
IF = 1 A
IF = 2 A
IR
Version SOD123W
4. Marking
Table 4. Marking codes Type number PMEG4020ER
Marking code BE
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
2 A low VF MEGA Schottky barrier rectiﬁer
2. Pinning information
Table 2. Pin 1 2
Pinning Description cathode anode
[1] The marking bar indicates the cathode.

BU406TU;BU406;BU408;中文规格书,Datasheet资料

(3.00) (3.70) 15.90 ±0.20 18.95MAX.
9.20 ±0.20 (1.46)
10.08 ±0.30
13.08 ±0.20 (1.00)
1.27 ±0.10
2.54TYP [2.54 ±0.20]
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20]
0.50
+0.10 –0.05
2.40 ±0.20
10.00 ±0.20
© 2012 Fairchild Semiconductor Corporation
BU406/406H/408 Rev. B0
3
/
Dimensions in Millimeters
Min. 10
Max.
5 100
1
1
Units
mA μA mA
mA
1
V
1
V
1
V
1.2
V
1.2
V
1.5
V
MHz
0.75
μs
0.4
μs
0.4
μs
© 2012 Fairchild Semiconductor Corporation
BU406/406H/408 Rev. B0
1
/
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

NSV40201LT1G;中文规格书,Datasheet资料

Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector − Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.200 A) Base − Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 10 mA) Base − Emitter Turn−on Voltage (Note 3) (IC = 1.0 A, VCE = 2.0 V) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. td tr ts tf − − − − − − − − 100 100 750 110 ns ns ns ns hFE 200 200 180 180 − − − − − − 150 − − − 370 − − 0.006 0.044 0.085 0.082 0.760 0.760 − − − − − − − 0.011 0.060 0.115 0.115 0.900 0.900 − 450 45 V V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 40 6.0 − − − − − − − − − − 0.1 0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Typ Max Unit

博布里克洗手间设备产品技术数据表说明书

The illustrations and descriptions herein are applicable to production as of the date of this T echnical Data Sheet. Revised 9/07 Printed in U.S.A. The manufacturer reserves the right to, and does from time to time, make changes and improvements in designs and dimensions. © 2007 by Bobrick Washroom Equipment, Inc.The illustrations and descriptions herein are applicable to production as of the date of this T echnical Data Sheet.1040 Revised 9/07 Printed in U.S.A.The manufacturer reserves the right to, and does from time to time, make changes and improvements in designs and dimensions.© 2007 by Bobrick Washroom Equipment, Inc.maTerialS:Stiles — 1'' (25mm) finished thickness: 3-ply, 45-lb (20.4-kg) density, resin-impregnated particle board is bonded to each side of 11-gauge (3.2mm) sheet steel that serves as reinforcing core; surfaces and edges are .050'' (1.3mm) thick, high-pressure plastic laminate with colored face sheets and matte finish. Leveling device: 3/8'' x 7/8'' (10 x 22mm) steel bar is welded to sheet-steel core of stile, forming a single structural unit; furnished with 3/8'' (10mm) diameter threaded rods, hex nuts, lock washers, flat washers, expansion shields, and shoe retainers. Shoe: 18-8 S, type-304, 22-gauge (0.8mm) stainless steel with satin finish; 4'' (102mm) high.Panels and doors — 1'' (25mm) finished thickness: 3-ply, 45-lb (20.4-kg) density, resin-impregnated particle board; surfaces and edges are .050'' (1.3mm) thick, high-pressure plastic laminate with colored face sheets and matte finish.Posts (for 1043 Series screens only) — 1-1/4'' (32mm) square tubing; 18-8 S, type-304, 18-gauge (1.2mm) stainless steel with satin finish. Floor and ceiling connections are constructed of 18-8 S, type-304, heavy-gauge stainless steel. Furnished in 10-ft (305-cm) lengths; to be cut in field to job specifications.Headrail (for 1042 Series only) — Extruded anodized aluminum with satin finish. Enclosed construction with sloping top. Face has raised grip-resistant edge.Designer's Notes: Headrails with integral curtain tracks and hooks are available for compartments without doors. Vinyl curtains are available as an optional ac-cessory. Benches are available as an optional accessory for dressing compartments: 1'' (25mm) thick laminated plastic, 10'' (25cm) deep, 18'' or 24'' (46 or 61cm) wide; furnished with two stainless steel support brackets.Wall Posts — 1" x 1-1/2" (25 x 38mm) tubing. 18-8 S, type-304, 16-gauge (1.6mm) stainless steel with satin finish. 58" (147cm) high, pre-drilled for door hard-ware.Commercial Hardware (standard) — Hinges, door latches, door keepers, clothes hooks, and mounting brackets are constructed of 18-8 S, type-304, heavy-gauge stainless steel with satin finish. Threaded inserts are factory installed for securing hinges on inswing doors and furnished for outswing doors. T-nuts are factory installed for securing door latch. Theft-resistant, stainless steel pin-head, torx screws are furnished for door hardware and all mounting brackets. Black rubber bumper on the door latch serves as door bumper for inswing door. Balanced hinge is adjustable to hold door of unoccupied toilet compartment partially open or fully closed. Toilet compartment door is locked from inside by sliding door latch into keeper. A locked compartment may be opened from outside by lifting door to disengage latch from keeper. Track of door latch prevents inswing door from swinging out beyond stile; on outswing door, the door keeper prevents it from swinging in beyond stile.Continuous Hardware (.65 option) — Hinges, door latches, door keepers, clothes hook, U-channels, door stop plates and angle brackets are constructed of 18-8 S, type-304, heavy-gauge stainless steel with satin finish; one-piece, full-height hinge is 16 gauge (1.6mm); one-piece door keepers shall be is 11 gauge (3.2mm); one-piece full-height U-channels and angle brackets are 18 gauge (1.2mm). U-channels secure panels to stiles, and angle brackets secure panels and stiles to walls. Door latch slides on a shock-resistant nylon track. A locked compartment may be opened from outside by lifting door to disengage latch from keeper. Two doorstops prevent door from being kicked out by vandals. Theft-resistant, stainless steel pin-head, torx screws are furnished for door hardware, U-channels, and angle brackets. Doors are equipped with a self-closing hinge. Threaded inserts are factory installed to secure door hinge, latch, and doorstops. To specify continuous hardware, add suffix .65 to series number. Example: specify 1042.65 for overhead-braced partitions furnished with continuous hardware, including factory-installed threaded inserts for door hardware attachment.inSTallaTion:Bobrick installation instructions are packed with each shipment and are available also in advance on request.notes:1. Where water from showers or hose-down cleaning comes in contact with partitions, Bobrick 1080 Series water-resistant, solid phenolic partitions are recom-mended.2. Ceiling-hung partitions require structural members (not furnished by Bobrick) in ceiling. For suggested types of ceiling support systems, see Bobrick Advisory Bulletin TB-32.3. Wall backing is required to secure the mounting brackets of panels, stiles, and wall posts. For suggested wall backing, see Bobrick Advisory Bulletin TB-46.4. Floor-anchored stiles are furnished with expansion anchors and threaded rods. The expansion anchors require minimum 2" (50mm) penetration into minimum 3" (75mm) thick structural concrete.5. Bobrick stainless steel partition-mounted washroom accessories are available for mounting in panels between two compartments. See current Bobrick Catalog for description of accessories. Cutouts in panels can be pre-cut for Bobrick models at factory if location and size of all cutouts and Bobrick model numbers are furnished at time of order.guaranTee: Bobrick toilet partitions are guaranteed to be free from defects in material and workmanship for a period of one year from date of purchase. Any products returned to Bobrick under this guarantee will be repaired or replaced at no charge. SpeciFicaTion:Laminated plastic ____________________ (insert one: toilet partitions, dressing compartments, urinal screens, entrance screens) shall be _______________ (insert one: floor-anchored, overhead-braced, ceiling-hung, wall-hung, post-to-ceiling). Stiles, panels and doors shall have a finished thickness of 1'' (25mm). Core of panels and doors shall be 3-ply, 45-lb (20.4-kg) density, resin-impregnated particle board. Stiles shall have 3-ply, 45-lb (20.4-kg) density, resin-impregnated particle board bonded to each side of 11-gauge (3.2mm) sheet steel that serves as reinforcing core. Stiles shall have leveling device that is welded to the sheet-steel core and concealed by a one-piece, type-304, satin-finish stainless steel shoe that is 4'' (102mm) high. Surfaces and edges shall be .050'' (1.3mm) thick, high-pressure plastic laminate with colored face sheets and matte finish; bonding shall be done using adhesives especially formulated to prevent delamination from moisture and heat normally existing in public washrooms. Stiles, panels and doors shall be __________ (insert color name and number from current Bobrick Catalog). Headrails for overhead-braced compartments shall be anodized aluminum with satin finish. c All door hardware and mounting brackets shall be type-304 stainless steel with satin finish. No door hardware or mounting brackets shall be exposed on exterior of compartments, except on outswing doors. Threaded inserts shall be factory installed for securing hinges on inswing doors and furnished for outswing doors. T-nuts shall be factory installed for securing door latches. Theft-resistant, stainless steel pin-head, torx screws shall be furnished for door hardware and all mounting brackets. A coat hook shall be furnished for each door. Hinges shall be adjustable to hold doors of unoccupied compartments partially open or fully closed, and shall allow a locked compartment to be opened from outside by lifting door to disengage latch from keeper.c To specify continuous hardware, replace end of specifications paragraph with: .65 option All door hardware, U-channels, and angle brackets shall be type-304 stainless steel with satin finish: one-piece, full-height hinges shall be 16 gauge (1.6mm); one-piece door keepers shall be 11 gauge (3.2mm); one-piece, full- height U-channels and single brackets shall be 18 gauge (1.2mm). U-channels shall be furnished to secure panels to stiles, and angle brackets furnished to secure panels and stiles to walls. Two doorstops shall be furnished for each door to prevent it from being kicked out by vandals. Theft-resistant, stainless steel pin-head, torx screws shall be furnished for door hardware, U-channels, and angle brackets. Hinges shall allow locked compartment to be opened in emergency from outside by lifting door to disengage latch from keeper. Doors shall be equipped with a self-closing hinge. Threaded inserts shall be factory installed to secure all door hinges, latches, and doorstops. Manufacturer's service and parts manual shall be provided to the building owner/manager upon request.______________________ (insert one: toilet Partitions, dressing Compartments, Urinal Screens, entrance Screens) shall be _______________ Series (insert series number) of Bobrick Washroom equipment, inc., Clifton Park, new York; Jackson, tennessee; Los Angeles, California; Bobrick Washroom equipment Company, Scarborough, ontario; Bobrick Washroom equipment Pty. Ltd., Australia; and Bobrick Washroom equipment Limited, United Kingdom.。

Perkadox PF-MT40商品说明书

Product Data SheetPerkadox PF-MT40tert-Butyl monoperoxymaleate, 40% in dibutyl maleatePerkadox® PF-MT40 is a 40% suspension which is used for room temperature curing of acrylic solid surface without yellow discoloration. It is used in combination with Accelerator CTAS for room temperature cure.CAS number1931-62-0EINECS/ELINCS No.217-691-1TSCA statuslisted on inventoryMolecular weight188.2Active oxygen contentperoxide8.5%Concentration3.23-3.57%SpecificationsAppearance PasteAssay38.0 - 42.0 %CharacteristicsDensity, 25 °C0.850 g/cm³Viscosity, 25 °C25000-50000 mPa.sApplicationsPerkadox® PF-MT40 can be used as for the ambient temperature curing of MMA resins. Without the addition of an accelerator, the cure of the acrylate resin starts only above the activation temperature of 90°C. For the cure at ambient temperature, Perkadox® PF-MT40 must be accelerated with a combination of special accelerators. Together with the Accelerators R-913 and Ca(OH)2, a reasonable geltime is obtained with a fast cure at ambient temperatures. The most important advantage of a cure system based on Perkadox® PF-MT 40 is the absence of yellow discoloration and a lower residual monomer content compared to results obtained with a BPO/amine curing system.Thermal stabilityOrganic peroxides are thermally unstable substances, which may undergo self-accelerating decomposition. The lowest temperature at which self-accelerating decomposition of a substance in the original packaging may occur is the Self-Accelerating Decomposition Temperature (SADT). The SADT is determined on the basis of the Heat Accumulation Storage Test.SADT50°C (122°F)Method The Heat Accumulation Storage Test is a recognized test method for thedetermination of the SADT of organic peroxides (see Recommendations on theTransport of Dangerous Goods, Manual of Tests and Criteria - United Nations, NewYork and Geneva).StorageDue to the relatively unstable nature of organic peroxides a loss of quality can be detected over a period of time. To minimize the loss of quality, Nouryon recommends a maximum storage temperature (Ts max. ) for each organic peroxide product.Ts Max.25°C (77°F)Note When stored under the recommended storage conditions, Perkadox® PF-MT40will remain within the Nouryon specifications for a period of at least 3 months afterdelivery.Packaging and transportIn North America Perkadox® PF-MT40 is packed in non-returnable, 5 gallon polyethylene containers of 39.7 lb net weight. In other regions the standard packaging is plastic pails for 14 kg peroxide. Both packaging and transport meet the international regulations. For the availability of other packed quantities contact your Nouryon representative.Perkadox®PF-MT40 is classified as Organic peroxide type E; solid, Division 5.2; UN 3108; PG I.Safety and handlingKeep containers tightly closed. Store and handle Perkadox® PF-MT40 in a dry well-ventilated place away from sources of heat or ignition and direct sunlight. Never weigh out in the storage room.Avoid contact with reducing agents (e.g. amines), acids, alkalis and heavy metal compounds (e.g. accelerators, driers and metal soaps). Please refer to the Safety Data Sheet (SDS) for further information on the safe storage, use and handling of Perkadox® PF-MT40. This information should be thoroughly reviewed prior to acceptance of this product.The SDS is available at /sds-search.All information concerning this product and/or suggestions for handling and use contained herein are offered in good faith and are believed to be reliable.Nouryon, however, makes no warranty as to accuracy and/or sufficiency of such information and/or suggestions, as to the product's merchantability or fitness for any particular purpose, or that any suggested use will not infringe any patent. Nouryon does not accept any liability whatsoever arising out of the use of or reliance on this information, or out of the use or the performance of the product. Nothing contained herein shall be construed as granting or extending any license under any patent. Customer must determine for himself, by preliminary tests or otherwise, the suitability of this product for his purposes.The information contained herein supersedes all previously issued information on the subject matter covered. The customer may forward, distribute, and/or photocopy this document only if unaltered and complete, including all of its headers and footers, and should refrain from any unauthorized use. Don’t copythis document to a website.Perkadox® is a registered trademark of Nouryon Functional Chemicals B.V. or affiliates in one or more territories.Contact UsPolymer Specialties Americas************************Polymer Specialties Europe, Middle East, India and Africa*************************Polymer Specialties Asia Pacific************************2022-6-30© 2022Thermoset composites Perkadox PF-MT40。

VLF4012AT-4R7M1R1;VLF4012AT-100MR79;VLF4012AT-3R3M1R3;VLF4012AT-2R2M1R5;中文规格书,Datasheet资料

Inductance tolerance(%) ±30 ±20 ±20 ±20 ±20 ±20 ±20
Test frequency (kHz) 100 100 100 100 100 100 100
DC resistance( ) max. 0.054 0.1 0.15 0.2 0.31 0.46 1.20 typ. 0.047 0.091 0.13 0.1R7
2.8±0.2
1.4max. Dimensions in mm
RECOMMENDED PC BOARD PATTERN
1.2 2.1 3.4 Dimensions in mm
Inductance [at 1/2 Idc1]3 (µH) 1 2.2 3.3 4.7 6.8 10 22
• All specifications are subject to change without notice.
/
001-04 / 20120310 / e531_vlf
(3/17)
Inductors for Power Circuits Wound/STD • Magnetic Shielded
Part No. VLF3014AT-1R0N1R7 VLF3014AT-2R2M1R2 VLF3014AT-3R3M1R0 VLF3014AT-4R7MR90 VLF3014AT-6R8MR72 VLF3014AT-100MR59 VLF3014AT-220MR37
1
SHAPES AND DIMENSIONS
VLF-MT Series VLF302510MT
With the VLF302510MT Series, a DC to DC converter with topclass voltage conversion efficiency for similar size products was achieved by optimizing the magnetic material and configuration. These products are optimal for use as choke coils in switching power supplies such as those in mobile devices requiring spacesaving design. FEATURES • Miniature size Mount area: 3.02.5mm Low profile: 1.0mm max. height • Generic use for portable DC to DC converter line. • High magnetic shield construction should actualize high resolution for EMC protection. • The products contain no lead and also support lead-free soldering. • The products is halogen-free. • It is a product conforming to RoHS directive. APPLICATIONS Smartphones, cellular phones, DSCs, DVCs, HDDs, LCD displays, compact power supply modules, etc. SHAPES AND DIMENSIONS

AZ762中文资料

POWER RELAYFEATURES •Dielectric strength 5000 Vrms •Low cost•Epoxy sealed version available •16 Amp switching•Isolation spacing greater than 10 mm•Reinforced insulation, EN 60730-1 (VDE 0631, part 1),EN 60335-1 (VDE 0700, part 1)•UL, CUR file E44211•VDE 40006031ZET TLERelectronics GmbHFax +49 89 800 97 200 office@ 0 97 800 89 +49 Tel. GermanyPuchheim, D-82178 Junkersstrasse 3, 2004-09-27GENERAL DATALife ExpectancyMinimum operations Mechanical 1 x 107Electrical 1 x 105at 16 A 250 VAC Res.Operate Time (typical)7 ms at nominal coil voltage Release Time (typical)3 ms at nominal coil voltage (with no coil suppression)Dielectric Strength 5000 Vrms coil to contact(at sea level for 1 min.)1000 Vrms between open contacts Insulation 1000 megohms min. at 20°C Resistance 500 VDC 50% RH InsulationC250(according to Overvoltage category: III DIN VDE 0110, Pollution degree: 3IEC 60664-1)Nominal voltage: 250 VACDropoutGreater than 10% of nominal coil voltage Ambient TemperatureAt nominal coil voltageOperating -40°C (-40°F) to 85°C (185°F)Storage -40°C (-40°F) to 105°C (221°F)Vibration 0.062" (1.5 mm) DA at 10–55 Hz Shock10 gEnclosure P .B.T. polyesterTerminalsTinned copper alloy, P.C.Max. Solder Temp.270°C (518°F)Max. Solder Time 5 seconds Max. Solvent Temp.80°C (176°F)Max. Immersion Time 30 Seconds Weight14 gramsPacking unit in pcs20 per plastic tube / 1000 per carton boxCONTACTSArrangement SPDT (1 Form C)SPST (1 Form A, 1 Form B)RatingsResistive load:Max. switched power:480 W or 4432 VA Max. switched current:16 AMax. switched voltage:150 VDC* or 440 VAC* Note: If switching voltage is greater than 30VDC,special precautions must be taken.Please contact the factory.Rated Load UL, CUR16 A at 277 VAC resistive, 100k cycles [3]16 A at 277 VAC resistive, 50k cycles [1]1 HP at 250 VAC (1 Form A) [1]1/2HP at 125 VAC (1 Form A) [1]TV-5 at 125 VAC (1 Form A) [1]16 A at 277 VAC resistive, 75k cycles [2]B300 Pilot Duty [2]R300 Pilot Duty [2]VDE 16 A at 250 VAC resistive, [1] [2] and [3]9 A at 250 VAC, inductive (Form A) [1] [2] and [3]Material Silver cadmium oxide [1] or silver tin oxide [2]or silver nickel [3]. Gold plating available Resistance< 50 milliohms initiallyCOILPowerAt Pickup Voltage 196 mW(typical)Max. Continuous 1.7 W at 20°C (68°F) ambient Dissipation Temperature Rise 26°C (47°F) at nominal coil voltage Max. Temperature130°C (266°F)NOTES1.All values at 20°C (68°F).2.Relay may pull in with less than “Must Operate” value.3.Specifications subject to change without notice.2004-09-27ZET TLERelectronics GmbHFax +49 89 800 97 200 office@ 0 97 800 89 +49 Tel.GermanyPuchheim, D-82178 Junkersstrasse 3,RELAY ORDERING DATACOIL SPECIFICATIONS – DC COILORDER NUMBER*Nominal CoilMust OperateMax. ContinuousCoil Resistance1 Form C 1 Form AVDC VDC VDC Ohm ± 10%53.510.262 AZ762–1A–5DAZ762–1C–5D 6 4.212.390AZ762–1A–6D AZ762–1C–6D 9 6.318.3200AZ762–1A–9D AZ762–1C–9D 128.424.7360 AZ762–1A–12D AZ762–1C–12D 1812.637.0810AZ762–1A–18D AZ762–1C–18D 2416.849.41,440 AZ762–1A–24DAZ762–1C–24D 4833.698.05,760AZ762–1A–48D AZ762–1C–48D 6042.0112.97,500AZ762–1A–60D AZ762–1C–60D 11077.0206.925,200AZ762–1A–110DAZ762–1C–110D* “1A” or “1C” denote silver cadmium oxide contacts.Substitute “1B” in place of “1A” for 1 Form B contact.Add suffix “E” to “1A” or “1B” or “1C” for silver tin oxide contacts. Add suffix “B” to “1A” or “1B” or “1C” for silver nickel contacts. Add suffix “E” at the end of order number for sealed version.Add suffix “A” at the end of order number for gold plated contacts.。

BUK9675-55A中文资料

TrenchMOS™ logic level FET
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-a)
thermal resistance from junction to ambient
120
Pder (%) 100
03na19
80
60
40
20
0 0 25 50 75 100 125 150 175 200 Tmb (oC)
Pder
=
-------P----t--o--t------P
×
100
%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
tp
t
T
10-1 tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07831
Product speciﬁcation
Rev. 01 — 9 February 2001
vertical in still air; SOT78 package
mounted on printed circuit board; minimum footprint; SOT404 package
Rth(j-mb)

APHBM2012QBDSURKC,APHBM2012QBDSURKC,APHBM2012QBDSURKC, 规格书,Datasheet 资料

2.0x1.25mm SMD CHIP LED LAMP
Part Number: APHBM2012QBDSURKC
ATTENTION
OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES
Blue Hyper Red
Description
The Blue source color devices are made with InGaN Light Emitting Diode. The Hyper Red source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. Static electricity and surge damage the LEDS. It is recommended to use a wrist band or anti-electrostatic glove when handling the LEDs. All devices, equipment and machinery must be electrically grounded.
REV NO: V.3 CHECKED: Allen Liu
DATE: APR/19/2011 DRAWN: J.Yu
PAGE: 3 OF 6 ERP: 1203010215
芯天下--/
Hyper Red
SPEC NO: DSAJ8666 APPROVED: WYNEC
Part No. Dice Lens Type Iv (mcd) [2] @ 20mA Min. Blue (InGaN) APHBM2012QBDSURKC Hyper Red (AlGaInP)

FM25640B-GTR;FM25640B-G;中文规格书,Datasheet资料

Pin Configuration
CS SO WP VSS
1 2 3 4
8 7 6 5
VDD HOLD SCK SI
Pin Names /CS /HOLD /WP SCK SI SO VDD VSS
Function Chip Select Hold Write Protect Serial Clock Serial Data Input Serial Data Output 5V Ground
Description
The FM25640B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25640B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. The FM25640B is capable of supporting up to 1012 read/write cycles, or a million times more write cycles than EEPROM. These capabilities make the FM25640B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The FM25640B provides substantial benefits to users of serial EEPROM, in a hardware drop-in replacement. The FM25640B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The specifications are guaranteed over an industrial temperature range of -40°C to +85°C.

ISP762T中文资料

Page 1
2006-03-09
元器件交易网
ISP 762 T
Block Diagram
+ V bb
Voltage source V Logic
Overvoltage protection
Current limit
Gate protection
Charge pump Level shifter Rectifier
IN
Limit for unclamped ind. loads
OUT
Temperature sensor Load
ESD
Logic
GND
miniPROFET

Signal GND
Load GND
Pin 1 2 3 4 5 6 7 8
Symbol GND IN OUT NC Vbb Vbb Vbb Vbb
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
• Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection with external resistor • CMOS compatible input • Loss of GND and loss of Vbb protection • Very low standby current

BUK9640中文资料

Product specification
BUK9540-100A BUK9640-100A
AVALANCHE LIMITING VALUE
SYMBOL WDSS1
PARAMETER
Drain-source non-repetitive unclamped inductive turn-off energy
VDD = 30 V; Rload =1.2Ω; VGS = 5 V; RG = 10 Ω
Measured from drain lead 6 mm from package to centre of die Measured from contact screw on tab to centre of die(TO220AB) Measured from upper edge of drain tab to centre of die(SOT404) Measured from source lead to source bond pad
-
-
37
A
-
- 149 A
- 0.85 1.2 V
-
1.1
-
V
-
60
-
ns
- 0.24 -
µC
December 1999
2
Rev 1.000
元器件交易网
Philips Semiconductors
TrenchMOS™ transistor Logic level FET
1ms
DC 10ms
100ms
1 1
10
VDS/V
100
1000
Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp

BUK138-50DLC1,118;中文规格书,Datasheet资料

MIN. -
MAX. 50
self limited
8 5 10 40 175 150 260
MAX. 2
UNIT V A
A mA mA W ˚C ˚C ˚C
UNIT kV
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
The supply for the logic and overload protection is taken from the input. Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified
FUNCTIONAL BLOCK DIAGRAM
INPUT
O/V CLAMP
RIG
LOGIC AND PROTECTION
MAX.
50 8 40 150 100
650
UNIT
V A W ˚C mΩ
µA
DRAIN
POWER MOSFET
PINNING - SOT428
PIN
DESCRIPTION
1 input
50
IDM = 1 A; tp ≤ 300 µs; δ ≤ 0.01
50
IDSS
Drain source leakage current VDS = 40 V
-
Tmb = 25 ˚C
-

BUK765R2-40B,118;中文规格书,Datasheet资料

1.Product profile1.1General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2Features and benefits⏹Q101 compliant⏹Suitable for standard level gate drive sources⏹Suitable for thermally demanding environments due to 175 °C rating1.3Applications⏹12 V loads⏹Automotive systems⏹General purpose power switching ⏹Motors, lamps and solenoids1.4Quick reference data[1]Continuous current is limited by package.BUK765R2-40BN-channel TrenchMOS standard level FETRev. 3 — 22 November 2011Product data sheetTable 1.Quick reference data Symbol ParameterConditionsMin Typ Max Unit V DS drain-source voltage T j ≥25°C; T j ≤175°C--40V I D drain currentV GS =10V;T mb =25°C;see Figure 1; see Figure 3[1]--75A P tot total power dissipation T mb =25°C;see Figure 2--203W Static characteristicsR DSondrain-source on-state resistance V GS =10V;I D =25A;T j =25°C; see Figure 11; see Figure 12-4.45.2m ΩDynamic characteristics Q GDgate-drain chargeV GS =10V;I D =25A;V DS =32V; T j =25°C; see Figure 13-16-nCAvalanche ruggedness E DS(AL)Snon-repetitive drain-source avalanche energyI D =75A;V sup ≤40V; R GS =50Ω; V GS =10V;T j(init)=25°C; unclamped--494mJ2.Pinning information[1]It is not possible to make a connection to pin 2.3.Ordering informationTable 2.Pinning information Pin Symbol Description Simplified outline Graphic symbol1G gate SOT404 (D2PAK)2D drain [1]3S sourcembDmounting base; connected to drainmb132Table 3.Ordering informationType numberPackage NameDescriptionVersionBUK765R2-40BD2PAKplastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)SOT4044.Limiting values[1]Current is limited by power dissipation chip rating.[2]Continuous current is limited by package.Table 4.Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditionsMin Max Unit V DS drain-source voltage T j ≥25°C; T j ≤175°C -40V V DGR drain-gate voltage R GS =20k Ω-40V V GS gate-source voltage -2020V I Ddrain currentT mb =25°C;V GS =10V;see Figure 1; see Figure 3[1]-143A [2]-75A T mb =100°C; V GS =10V; see Figure 1[2]-75A I DM peak drain current T mb =25°C; pulsed; t p ≤10µs; see Figure 3-573A P tot total power dissipation T mb =25°C;see Figure 2-203W T stg storage temperature -55175°C T j junction temperature -55175°C Source-drain diodeI S source current T mb =25°C[1]-143A [2]-75A I SM peak source current pulsed; t p ≤10µs; T mb =25°C-573A Avalanche ruggednessE DS(AL)Snon-repetitive drain-source avalanche energyI D =75A;V sup ≤40V; R GS =50Ω; V GS =10V; T j(init)=25°C; unclamped-494mJ5.Thermal characteristicsTable 5.Thermal characteristics Symbol ParameterConditions Min Typ Max Unit R th(j-mb)thermal resistance from junction to mounting basesee Figure 4--0.74K/W R th(j-a)thermal resistance from junction to ambientminimum footprint ; mounted on a printed-circuit board-50-K/W6.CharacteristicsTable 6.CharacteristicsSymbol Parameter Conditions Min Typ Max Unit Static characteristicsV(BR)DSS drain-source breakdownvoltage I D=0.25mA; V GS=0V; T j=25°C40--V I D=0.25mA; V GS=0V; T j=-55°C36--VV GS(th)gate-source threshold voltage I D=1mA; V DS=V GS; T j=25°C;see Figure 10234VI D=1mA; V DS=V GS; T j=-55°C;see Figure 10-- 4.4VI D=1mA; V DS=V GS; T j=175°C;see Figure 101--V I DSS drain leakage current V DS=40V; V GS=0V; T j=25°C-0.021µAV DS=40V; V GS=0V; T j=175°C--500µA I GSS gate leakage current V GS=20V;V DS=0V; T j=25°C-2100nAV GS=-20V; V DS=0V; T j=25°C-2100nAR DSon drain-source on-stateresistance V GS=10V;I D=25A;T j=175°C;see Figure 11; see Figure 12--9.9mΩV GS=10V;I D=25A;T j=25°C;see Figure 11; see Figure 12- 4.4 5.2mΩDynamic characteristicsQ G(tot)total gate charge I D=25A;V DS=32V; V GS=10V;T j=25°C; see Figure 13-52-nCQ GS gate-source charge-12-nC Q GD gate-drain charge-16-nCC iss input capacitance V GS=0V; V DS=25V; f=1MHz;T j=25°C; see Figure 14-28423789pFC oss output capacitance-711853pF C rss reverse transfer capacitance-296406pFt d(on)turn-on delay time V DS=30V; R L=1.2Ω; V GS=10V;R G(ext)=10Ω; T j=25°C -15-nst r rise time-51-ns t d(off)turn-off delay time-81-ns t f fall time-56-ns L D internal drain inductance from drain lead 6 mm from packageto centre of die; T j=25°C- 4.5-nHfrom upper edge of drain mountingbase to centre of die; T j=25°C- 2.5-nHL S internal source inductance from source lead to source bondpad; T j=25°C-7.5-nH Source-drain diodeV SD source-drain voltage I S=25A; V GS=0V; T j=25°C;see Figure 15-0.85 1.2Vt rr reverse recovery time I S=20A; dI S/dt=-100A/µs;V GS=-10V; V DS=20V; T j=25°C -54-nsQ r recovered charge-38-nC7.Package outlinePlastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)SOT404Fig 16.Package outline SOT404 (D2PAK)分销商库存信息: NXPBUK765R2-40B,118。

BUK9608-55B,118;BUK9508-55B,127;中文规格书,Datasheet资料

BUK9508-55BN-channel TrenchMOS logic level FETRev. 03 — 15 June 2010Product data sheet 1.Product profile1.1General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.1.2Features and benefits⏹Low conduction losses due to lowon-state resistance⏹Q101 compliant ⏹Suitable for logic level gate drivesources⏹Suitable for thermally demandingenvironments due to 175 °C rating1.3Applications⏹12 V and 24 V loads ⏹Automotive systems ⏹General purpose power switching ⏹Motors, lamps and solenoids1.4Quick reference dataTable 1.Quick reference dataSymbol Parameter Conditions Min Typ Max Unit V DS drain-sourcevoltageT j≥25°C; T j≤175°C--55VI D drain current V GS=5V;T mb=25°C;see Figure 1; see Figure 3[1]--75AP tot total powerdissipationT mb=25°C; see Figure 2--203W Static characteristicsR DSon drain-sourceon-stateresistance V GS=10V; I D=25A;T j=25°C- 6.27mΩV GS=5V;I D=25A;T j=25°C;see Figure 11; see Figure 12-7.18.4mΩ[1]Continuous current is limited by package.2.Pinning information3.Ordering informationAvalanche ruggednessE DS(AL)Snon-repetitive drain-source avalanche energy I D =75A; V sup ≤55V; R GS =50Ω; V GS =5V; T j(init)=25°C; unclamped --352mJDynamic characteristics Q GDgate-drain charge V GS =5V;I D =25A;V DS =44V;T j =25°C;see Figure 13-16-nCTable 1.Quick reference data …continued Symbol ParameterConditionsMin Typ MaxUnit Table 2.Pinning information Pin Symbol Description Simplified outline Graphic symbol1G gate SOT78 (TO-220AB)2D drain 3S sourcembDmounting base; connected to drain12mb3Table 3.Ordering informationType numberPackage NameDescriptionVersion BUK9508-55BTO-220ABplastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220ABSOT784.Limiting values[1]Continuous current is limited by package.[2]Current is limited by power dissipation chip rating.Table 4.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditionsMin Typ Max Unit V DS drain-source voltage T j ≥25°C; T j ≤175°C --55V V DGR drain-gate voltage R GS =20k Ω--55V V GS gate-source voltage -15-15V I Ddrain currentT mb =100°C; V GS =5V; see Figure 1[1]--75A T mb =25°C; V GS =5V;see Figure 1; see Figure 3[2]--110A [1]--75A I DM peak drain current T mb =25°C; t p ≤10µs; pulsed;see Figure 3--439A P tot total power dissipation T mb =25°C; see Figure 2--203W T stg storage temperature -55-175°C T j junction temperature -55-175°C Source-drain diodeI S source current T mb =25°C[2]--110A [1]--75A I SM peak source current t p ≤10µs; pulsed; T mb =25°C --439A Avalanche ruggednessE DS(AL)Snon-repetitive drain-sourceavalanche energyI D =75A; V sup ≤55V; R GS =50Ω; V GS =5V;T j(init)=25°C; unclamped--352mJ5.Thermal characteristicsTable 5.Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit R th(j-mb)thermal resistance from junction to mounting base see Figure 4--0.74K/WR th(j-a)thermal resistance from junction to ambientvertical in still air -60-K/W6.CharacteristicsTable 6.CharacteristicsSymbol Parameter Conditions Min Typ Max Unit Static characteristicsV(BR)DSS drain-sourcebreakdown voltage I D=0.25mA;V GS=0V; T j=25°C55--V I D=0.25mA;V GS=0V; T j=-55°C50--VV GS(th)gate-source thresholdvoltage I D=1mA; V DS=V GS; T j=25°C;see Figure 101.1 1.52VI D=1mA; V DS=V GS; T j=-55°C;see Figure 10-- 2.3VI D=1mA; V DS=V GS; T j=175°C;see Figure 100.5--VI DSS drain leakage current V DS=55V;V GS=0V; T j=175°C--500µAV DS=55V;V GS=0V; T j=25°C-0.021µA I GSS gate leakage current V DS=0V; V GS=15V; T j=25°C-2100nAV DS=0V; V GS=-15V; T j=25°C-2100nAR DSon drain-source on-stateresistance V GS=4.5V;I D=25A;T j=25°C--9.3mΩV GS=5V;I D=25A;T j=175°C;see Figure 11; see Figure 12--16.8mΩV GS=10V; I D=25A; T j=25°C- 6.27mΩV GS=5V;I D=25A;T j=25°C;see Figure 11; see Figure 12-7.18.4mΩDynamic characteristicsQ G(tot)total gate charge I D=25A; V DS=44V;V GS=5V;T j=25°C;see Figure 13-45-nCQ GS gate-source charge-9-nC Q GD gate-drain charge-16-nCC iss input capacitance V GS=0V;V DS=25V; f=1MHz;T j=25°C;see Figure 14-39605280pFC oss output capacitance-517620pF C rss reverse transfercapacitance-206282pFt d(on)turn-on delay time V DS=30V;R L=1.2Ω; V GS=5V;R G(ext)=10Ω; T j=25°C -29-nst r rise time-123-ns t d(off)turn-off delay time-131-ns t f fall time-86-nsL D internal draininductance from drain lead 6 mm from package tocenter of die; T j=25°C- 4.5-nHfrom contact screw on mounting base tocenter of die; T j=25°C- 3.5-nHL S internal sourceinductance from source lead to source bond pad;T j=25°C-7.5-nHSource-drain diodeV SD source-drain voltage I S =25A;V GS =0V; T j =25°C;see Figure 15-0.85 1.2V t rr reverse recovery time I S =20A;dI S /dt =-100A/µs;V GS =-10V;V DS =30V; T j =25°C-69-ns Q rrecovered charge-72-nCTable 6.Characteristics …continuedSymbol ParameterConditionsMin Typ Max Unit7.Package outlineFig 16.Package outline SOT78 (TO-220AB)分销商库存信息:NXPBUK9608-55B,118BUK9508-55B,127。

Korenix JetWave 4020工业级双频无线接入点数据手册 V2.0 9 5 2019说明

Industrial Wireless Access PointJetWave 4020JetWave 4020 Industrial Dual Band Dual Radio 802.11ac Wireless AP- Industry leading 802.11ac WIFI performance - Dual Band Dual Radios, 2.4G 802.11n + 5.8G 802.11ac Wave 1, 3rd Radio by option - Up to 1.16Gbps concurrent performance- Internal Dual band 9/10dBi 4T4R MIMO Antenna for both Ceiling/Wall-mounting installation - N-Type Connector for external antenna (4020E) - Dual M12 Gigabit Ethernet Bridging or NAT Routing - Controller-based AP management and 100ms Super Roaming, SNMPv1/v2c/v3, Trap, LLDP for NMS - WPA/WPA2 Security & VPN/IPSec Connectivity - IP67 Water-proof, -40~70℃ operating temperature,EN50121-4 EMC protection - M12 24V Power Input- M12 USB for configuration restoringThe JetWave 4020 equips the internal Dual band 9dBi 4T4R MIMO Antenna, the outstanding antenna design supports both ceiling and Wall-mountinginstallation, you don’t need to worry about how to select the external antenna any more.5630 IWLAN controller and supports 100ms Fast Roaming speed. The product supports M12 Ethernet, USB and 24V Power Input, IP67 waterproof, EN50121-4 EMC protection and -40~70℃ wide operating temperature.M12 Eth/USBAppearanceDimensionUSB +ConsoleEthernet GT1 -WAN (GigabitX-coding M12)2x DC Input 24VGroundEthernet GT2-LAN (GigabitX-coding M12) JetWave 4020: EmbeddedWall/Ceiling-mount Antenna Inside (2.4G 2T2R 9dBi + 5G 2T2R 10dBi) JetWave 4020E: No Antenna.4x N-Type External Antenna Sockets(JetWave 4020E Only)KorenixIndustry Leading 802.11acDual Band Dual Radio ConcurrentWide Range Coverage embedded antennaController and SNMP based Super Roaming and ManagementThe product equips with two 2.4G 9dBi and two 5G 10dBi antenna pattern for two streams 2T2R MIMO transmission. The embedded antenna which provides 180∘width, above 300m length sector coverage. With this embedded antenna, the product can be installed on the ceiling of high buildings or wall-mounting on wall. It provides flexible installation type and very useful for field applications.The product supports dual independent radios, the first radio is 802.11n 2.4G frequency, which is used to the access from the client mobile devices. The second radio is 802.11ac 5G frequency, which is used to higher bandwidth applications. The two radios can work as dual band dual radio concurrent mode in one unit.The product supports the industry-leading 802.11ac standard, which provides triple times HW speed than 802.11n. The 802.11ac 2T2R design reaches 866Mbps hardware data rate, prior to the 802.11n is just 300Mbps.The product supports remote network management features to complete wire and wireless management. -Controller based management by the IWLANController. The product can be auto discovered, provision and supports server based Fast Roaming to reach 100ms handover time.-NMS Management: The product supports SNMPv1/v2c/v3, function-based MIB table and SNMPTrap. It also supports Link Layer Discovery Protocolfor auto topology.Rugged EN50121-4, M12 & IP67 WaterproofDual Gigabit Ethernet Routing & Robust Security24V InputM12 USBThe product equips with additional A-code M12 connector to support USB and Diagnostic console. With the M12 USB disk, user can upgrade firmware, backup and restore the configuration file. This is a very convenient design for field maintenance.The product is equipped with one M12 24V power input socket. While installing the product within the factory, cabinet, vehicle…, etc. The 24V power is popular and M12 connectors helps secure the construction. The Gigabit port 1 (WAN) also supports passive PoE design, users can deliver power and data through the same cable.There are two high speed Gigabit M12 Ethernet ports. With the two Ethernet port design, the product can support Routing mode to separate them to different IP subnet, and perform NAT Routing between the LAN, WLAN to WAN port. The product also implements secure IPSec VPN, Firewall, Port forwarding features for WAN interface.The anti-vibration, anti-shock and waterproof housing and M12 connectors secure the link reliability for outdoor installation, factory automation or any of the moving vehicles. The EN50121-4 Trackside EMC protection, IP67 waterproof and -40~70℃ operating temperature allows you to install the product on harshenvironment safely.Embedded 2.4G Antenna Radiation Pattern (JetWave 4020)Embedded 5G Antenna Radiation Pattern (JetWave 4020)External Antenna (JetWave 4020E)M12 Connector Pin AssignmentM12 A Code USB + ConsoleConnector PlacementLighting Protection Arrestor - JWA-Arrestor-5803RF CablingExampleM12 X Code Gigabit EthernetM12 A Code Power InputA B C DPlacementSpecificationJetWave 4020E JetWave 4020E Industrial Dual Band Dual Radio 802.11ac Wireless AP, External N-TypeAnt., 24V inputIncludes Product UnitQuick Installation GuideWall Mounting Kit, Wall Mount PlateAntenna: Embedded 2.4G+5G 9dbi Antennas inside the body (JetWave 4020) No Antenna, N-Type Female Antenna Socket (JetWave 4020E) Please download user manual from Korenix Web SiteOptional Accessory:JetWave 25m RJ-45 to X-code M12 Cable25m RJ-45 to X-code M12 Cable JWA-Arrestor-5803pls contact our sales representative。

mt7612u双频wifi模块

Product SpecificationRevision V1.0Date2016-10-24Module Name BL-M7612NU2Product Name IEEE802.11a/b/g/n/acWiFi2T2R USB2.0BilianApprove FieldEngineer QC SalesMR.PENG MR.PENG TONY WU138********Customer Approve FieldEngineer QC Manufactory PurchasingShenzhen Bilian Electronic Co.，LtdAddress:No268,Fuqian Rd.,JuTang Community,Guanlan Town,Baoan District,Shenzhen,518110,PRCHomepage:Table of ContentsRevision History (1)1.Introduction (1)1.1General Description (1)1.2Features (1)1.3Applications (1)2.Functional Block Diagram (2)3.Product Technical Specifications (2)3.1General Specifications (2)3.2DC Power Consumption (3)3.3RF Specifications (4)4.Pin Assignments (6)5.Application Information (7)5.1Supported Platform (7)5.2Typical Application Circuit (7)6.Mechanical Specifications (8)7.Others (9)7.1Package Information (9)7.2Storage Temperature and Humidity (9)7.3Recommended Reflow Profile (9)Revision HistoryDate DocumentRevision ProductRevision Description2016/10/24 1.0V1.0BL-M7612NU2First Release1.Introduction1.1General DescriptionThe MT7612U is a highly integrated single chip which has built in a2*2dual-band wireless LAN radio.It supports IEEE802.11ac draft standard and provides the highest PHY rate up to867Mbps,offering feature-rich wireless connectivity and reliable throughput from an extended distance.Figure1Top View Figure2Bottom View1.2Features●IEEE802.11a/b/g/n and802.11ac draft compliant●Dual-band2T2R mode with data rate up to867Mbps●Fully Compliance with USB v2.0specification●Supports drivers for WIN7/WIN8/WIN8.1/WIN10/XP,LINUX2.4/2.6~3.10,Android4.2/4.4/5.0●Security:WFA WPA/WPA2personal,WPS2.0,WAPI1.3Applications●Digital TV●Tablet/MID●USB dongle●Blu-ray Disc Player2.Functional BlockDiagramFigure 3BL-M7612NU2block diagram3.Product Technical Specifications3.1General SpecificationsItem Description Product Name BL-M7612NU2Main Chip MT7612U Host Interface USB2.0IEEE Standards IEEE 802.11b/a/g/n/acOperating Frequencies2.4GHz~2.4835GHz;5.12GHz~5.825GHz Modulation802.11b:CCK,DQPSK,DBPSK802.11a:64-QAM,16-QAM,QPSK,BPSK802.11g:64-QAM,16-QAM,QPSK,BPSK 802.11n:64-QAM,16-QAM,QPSK,BPSK802.11ac:256-QAM,64-QAM,16-QAM,QPSK,BPSKWorking ModeInfrastructure,Ad-Hoc Wireless Data Rate802.11b:1,2,5.5,11Mbps802.11g:6,9,12,18,24,36,48,54Mbps802.11a:6,9,12,18,24,36,48,54Mbps802.11n:MCS0~15,HT20reach up to144.4Mbps,HT40reach up to300Mbps 802.11ac:MCS0~9,VHT80reach up to 867MbpsRx Sensitivity -92dBm (Min)TX Power18dBm (Max)Antenna Type Connect to the external antenna through the IPEX connectorDimension(L*W*H)17.7*27.0*1.0mm(L*W*H)，Tolerance:±0.15mmPower Supply 3.3V±0.2VPower Consumption Standby170mA@3.3V(Max)TX mode790mA@3.3V(Max)Clock Source40MHzWorking Temperature-10°C to+60°CStorage Temperature-40°C to+85°CESD CAUTION:Although this module is designed to be as robust as possible,Electrostatic Discharge (ESD)can damage this module.It must be protected from ESD at all times and handled under the protection of ESD.3.2DC Power ConsumptionVcc=3.3V，Ta=25°C，unit:mASupply current Typ.MaxStandby(RF disabled)94106802.11b1Mbps11MbpsSupply current Typ.Max.Typ.Max.TX mode544556544564Rx mode198208210220 802.11g6Mbps54MbpsSupply current Typ.Max.Typ.Max.TX mode432440432460Rx mode218228208228 802.11a6Mbps54MbpsSupply current Typ.Max.Typ.Max.TX mode588604492516Rx mode184196190210 802.11n HT20(2.4G)MCS0MCS7Supply current Typ.Max.Typ.Max.TX mode504520420444Rx mode178192182198 802.11n HT40(2.4G)MCS0MCS7Supply current Typ.Max.Typ.Max.TX mode548564444472 Rx mode216232214232 802.11n HT20(5G)MCS0MCS7 Supply current Typ.Max.Typ.Max. TX mode612624508532 Rx mode190196188192 802.11n HT40(5G)MCS0MCS7 Supply current Typ.Max.Typ.Max. TX mode588608504528 Rx mode214226208224 802.11ac VHT80(5G)MCS0MCS9 Supply current Typ.Max.Typ.Max. TX mode624644520540 Rx mode2202312132233.3RFSpecificationsTX Power 11b11Mbps:18±1.5dBm11g54Mbps:15±1.5dBm11a54Mbps:14±1.5dBm11n-HT40-MCS7-2.4G:14.5±1.5dBm 11n-HT40-MCS7-5G:13.5±1.5dBm 11acMCS9:12.5±1.5dBmTX Constellation Error(EVM)802.11b:<-22dB@11Mbps802.11a/g:<-28dB@54Mbps802.11n-HT20-2.4G/5G:<-28dB@MCS7 802.11n-HT40-2.4G/5G:<-28dB@MCS7 802.11ac-VHT80-2.4G/5G:<-32dB@MCS9Receiver Minimum Input Sensitivity@PER 11b11Mbps:-85dBm@PER<8%;11g54Mbps:-70dBm@PER<10%;11a54Mbps:-68dBm@PER<10%;11n-HT40-MCS7-2.4G:-65dBm@PER<10%; 11n-HT40-MCS7-5G:-63dBm@PER<10%; 11ac MCS9:-55dBm@PER<10%;RF Test Report-ANT0Mode Rate(Mbps)Power(dBm)EVM(dB)Sensitivity(dBm) CH1CH7CH13CH1CH7CH13CH1CH7CH1311b117.3917.4817.04-28.70-28.92-29.64-92-92-921117.5117.2517.83-29.62-28.40-28.72-86-86-8711g 917.3717.0417.35-23.49-24.36-20.52-89-91-88 5415.4115.9315.49-35.56-32.32-32.55-72-72-74Mode Rate(Mbps)Power(dBm)EVM(dB)Sensitivity(dBm) CH3CH7CH11CH3CH7CH11CH3CH7CH1111nHT40 (2.4G)MCS017.5218.0617.90-22.94-19.67-20.11-84-85-85 MCS715.9715.8215.19-32.27-30.27-27.16-68.5-68-68.5Mode Rate(Mbps)Power(dBm)EVM(dB)Sensitivity(dBm) CH36CH100CH161CH36CH100CH161CH36CH100CH16111a 917.2417.4516.60-22.60-23.00-20.75-89-88-91 5415.3014.9314.17-31.16-33.35-29.50-72-72-72Mode Rate(Mbps)Power(dBm)EVM(dB)Sensitivity(dBm) CH38CH104CH159CH38CH104CH159CH38CH104CH15911nHT40 (5G)MCS016.8417.1516.28-24.69-24.90-23.55-89-89.5-88 MCS715.0315.5814.41-33.99-33.10-32.15-69-70-68.5Mode Rate(Mbps)Power(dBm)EVM(dB)Sensitivity(dBm) CH42CH106CH155CH42CH106CH155CH42CH106CH15511ac HT80MCS017.3117.2516.51-24.07-24.61-23.45-85.5-86-83.5 MCS913.8214.0413.75-38.69-37.31-36.56-59-59-58RF Test Report-ANT1Mode Rate(Mbps)Power(dBm)EVM(dB)Sensitivity(dBm) CH1CH7CH13CH1CH7CH13CH1CH7CH1311b 116.8116.7716.80-28.57-29.08-29.59-92-92-92 1116.7417.0516.92-28.43-28.57-28.39-86-86-8711g 916.9316.5216.53-21.58-21.44-21.44-88-88-88 5415.5015.1015.08-32.01-32.39-30.08-73-73-79Mode Rate(Mbps)Power(dBm)EVM(dB)Sensitivity(dBm) CH3CH7CH11CH3CH7CH11CH3CH7CH1111nHT40 (2.4G)MCS016.8916.8717.42-22.43-20.82-18.45-82.5-83-83 MCS715.0515.0015.53-31.20-32.24-29.89-67.5-67.5-68Mode Rate(Mbps)Power(dBm)EVM(dB)Sensitivity(dBm) CH36CH100CH161CH36CH100CH161CH36CH100CH16111a 917.2916.9216.62-25.82-24.25-24.24-88-86-88 5414.8414.7414.22-31.64-34.94-31.06-70-72-72Mode Rate(Mbps)Power(dBm)EVM(dB)Sensitivity(dBm) CH38CH102CH159CH38CH102CH159CH38CH102CH15911nHT40MCS017.3117.0116.63-21.81-24.05-23.14-87.5-87-86.5(5G)MCS715.1315.0114.73-32.08-32.17-29.95-69-70-69Mode Rate(Mbps)Power(dBm)EVM(dB)Sensitivity(dBm) CH42CH106CH155CH42CH106CH155CH42CH106CH15511ac HT80MCS017.4817.0116.22-22.09-23.04-22.14-84-84.5-82.5 MCS913.8013.3613.36-37.05-37.15-34.07-57.5-58-584.Pin AssignmentsFigure4Pin No：Pin Name Type Description1PND I System reset,active low2VDD33I 3.3V V oltage input3DM-I/O WLAN USB data-4DP+I/O WLAN USB data+5GND--Ground connections6LED O Programmable open-drain LED controller 7GND--Ground connections8NC--No connection(floating)9GND--Ground connections10GND--Ground connections11NC--No connection(floating)12GND--Ground connections5.Application Information5.1Supported PlatformOperating System CPU Framework DriverWIN7/WIN8/WIN8.1/WIN10/XP X86Platform EnableLINUX2.4/2.6~3.10ARM,MIPSII EnableAndroid4.2/4.4/5.0ARM,MIPSII Enable5.2Typical Application Circuit1.RF reference circuitFigure5NOTE：B differential pair need to keep90ohm impedance.b.Please pull low the PIN named PND if need to reset system.Otherwise host need to drive this pin high for normaloperation.c.WiFi RF use IPEX,if need to use the PIN of module please change the place of resistor near the IPEX.6.Mechanical SpecificationsFigure6Top ViewModule dimension:Typical(L*W*H):17.7*27.0*1.0mm Tolerance:+/-0.15mmFigure7Side ViewFigure8Bottom View97.Others7.1PackageInformationFigure9Package Information7.2Storage Temperature and Humidity1.Storage Condition:Moisture barrier bag must be stored under 30℃,humidity under 85%RH.The calculated shelf life for the dry packed product shall be a 12months from the bag seal date.Humidity indicator cards must be blue,<30%.2.Products require baking before mounting if humidity indicator cards reads >30%temp <30℃,humidity <70%RH,over 96hours.Baking condition:125℃,12hours.Baking times:1time.7.3Recommended Reflow ProfileReflow soldering shall be done according to the solder reflow profile.Typical Solder Reflow Profile is illustrated in Figures 15.The peak temperature is 245℃.Figure 10Typical Solder Reflow Profile。