IRF840PBF中文资料
IRF840中文资料_数据手册_参数
tf
Turn-off fall time
VDD = 250 V; RD = 30 Ω; RG = 9.1 Ω
Ld
Internal drain inductance Measured from tab to centre of die
Ld
Internal drain inductance Measured from drain lead to centre of die
CONDITIONS in free air
MIN. TYP. MAX. UNIT
-
- 0.85 K/W
- 60 - K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER
CONDITIONS
SYMBOL PARAMETER
CONDITIONS
EAS EAR IAS, IAR
Non-repetitive avalanche energy
Unclamped inductive load, IAS = 7.4 A; tp = 0.22 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:17
MIN.
- 55
MAX.
500 500 ± 30 8.5 5.4 34 147 150
UNIT
V V V A A A W ˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
IRF840B参数
Power MOSFETIRF840, SiHF840Vishay SiliconixFEATURES•Dynamic dV/dt Rating •Repetitive Avalanche Rated •Fast Switching •Ease of Paralleling •Simple Drive Requirements •Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 50 V, starting T J = 25 °C, L = 14 mH, R G = 25 Ω, I AS = 8.0 A (see fig. 12).c.I SD ≤ 8.0 A, dI/dt ≤ 100 A/µs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from case.PRODUCT SUMMARYV DS (V)500R DS(on) (Ω)V GS = 10 V0.85Q g (Max.) (nC)63Q gs (nC)9.3Q gd (nC)32ConfigurationSingleTO-220GDSORDERING INFORMATIONPackage TO-220Lead (Pb)-free IRF840PbF SiHF840-E3 SnPbIRF840SiHF840ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS500VGate-Source Voltage V GS ± 20 V Continuous Drain Current V GS at 10 VT C = 25 °C I D8.0A T C = 100 °C5.1Pulsed Drain Current a I DM 32Linear Derating Factor1.0W/°C Single Pulse Avalanche Energy b E AS 510mJ Repetitive Avalanche Current a I AR 8.0 A Repetitive Avalanche Energy a E AR 13mJ Maximum Power Dissipation T C = 25 °CP D 125WPeak Diode Recovery dV/dt cdV/dt 3.5V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 150°C Soldering Recommendations (Peak Temperature)for 10 s 300d Mounting Torque6-32 or M3 screw10 lbf · in 1.1N · m * Pb containing terminations are not RoHS compliant, exemptions may applyIRF840, SiHF840Vishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSARAMETER SYMBOL TY.MAX.UNITMaximum Junction-to-Ambient R thJA -62°C/W Case-to-Sink, Flat, Greased Surface R thCS 0.50-Maximum Junction-to-Case (Drain)R thJC- 1.0IRF840, SiHF840Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise notedFig. 1 - Typical Output Characteristics, T C = 25 °C Fig. 2 - Typical Output Characteristics, T C = 150 °CFig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. TemperatureIRF840, SiHF840 Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating AreaIRF840, SiHF840Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsIRF840, SiHF840Vishay SiliconixFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test CircuitIRF840, SiHF840Vishay Siliconix Array Fig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see /ppg?91070.Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.。
IRF840A中文资料
100
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
10us
10
TJ = 150 ° C
I D , Drain Current (A)
10 100us
1ms 1 10ms
1
TJ = 25 ° C
0.1 0.2
7/7/99
元器件交易网
IRF840A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Drain-to-Source Breakdown Voltage 500 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– VGS(th) Gate Threshold Voltage 2.0 ––– IDSS Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– IGSS Gate-to-Source Reverse Leakage ––– V(BR)DSS Typ. ––– 0.58 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.85 Ω VGS = 10V, ID = 4.8A 4.0 V VDS = VGS, ID = 250µA 25 VDS = 500V, VGS = 0V µA 250 VDS = 400V, VGS = 0V, TJ = 125°C 100 VGS = 30V nA -100 VGS = -30V
IRF840A说明书
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
510 8.0 13
2
IRF840A
100
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
2.5
10
TJ = 150 ° C
2.0
TJ = 25 ° C
1
1.5
1.0
0.5
0.1 4.0
V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
Typ.
––– 0.50
Max.
1.0 ––– 62
Units
°C/W
Diode Characteristics
Min. Typ. Max. Units IS
I SM
VSD t rr Q rr ton
Conditions D MOSFET symbol ––– ––– 8.0 showing the A G integral reverse ––– ––– 32 S p-n junction diode. ––– ––– 2.0 V TJ = 25°C, IS = 8.0A, VGS = 0V ––– 422 633 ns TJ = 25°C, IF = 8.0A ––– 2.0 3.0 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
场效应管参数表2
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IR TO-24707+无铅原装正品，墨西哥产地IRFP9240PBF IR TO-24707+无铅原装正品，墨西哥产地IRFP90N20DPBF IR TO-24707+无铅原装正品，墨西哥产地IRFPC50PBF IR TO-24707+无铅原装正品，墨西哥产地IRFPC60PBF IR TO-24707+无铅原装正品，墨西哥产地IRFPE40PBF IR TO-24707+无铅原装正品，墨西哥产地IRFPE50PBF IR TO-24707+无铅原装正品，墨西哥产地IRFPF50PBF IR TO-24707+无铅原装正品，墨西哥产地IRFPG50PBF IR TO-24707+无铅原装正品，墨西哥产地IRFPS37N50APBF IR TO-24707+无铅原装正品，墨西哥产地IRG4PC30FPBF IR TO-24707+无铅原装正品，墨西哥产地IRG4PC40S IR TO-24705+有铅原装正品，墨西哥产地IRG4BC20UDPBF IR TO-22007+无铅原装正品，墨西哥产地IRG4BC30KDPBF IR TO-22007+无铅原装正品，墨西哥产地IRG4BC40U IR TO-22005+有铅原装正品，墨西哥产地IRG4BC40W IR TO-22005+有铅原装正品，墨西哥产地IRG4PF50WPBF IR TO-24707+无铅原装正品，墨西哥产地40TPS12APBF IR TO-24707+无铅原装正品，中国产地IR2101IR DIP-806+有铅原装正品，马来西亚产地IR2101STR IR SOP-805+有铅原装正品，马来西亚产地IR2103IR DIP-806+有铅原装正品，马来西亚产地IR2103PBF IR DIP-806+无铅原装正品，马来西亚产地IR2103STRPBF IR SOP-807+无铅原装正品，马来西亚产地IR2104STRPBF IR SOP-807+无铅原装正品，马来西亚产地IR2108IR DIP-806+有铅原装正品，马来西亚产地IR2110PBF IR DIP-1407+无铅原装正品，马来西亚产地IR2110STRPBF IR SOP-1407+无铅原装正品，马来西亚产地IR2111IR DIP-805+有铅原装正品，马来西亚产地IR2111STR IR SOP-805+有铅原装正品，马来西亚产地IR2111STRPBF IR SOP-807+无铅原装正品，马来西亚产地IR2112IR DIP-805+有铅原装正品，马来西亚产地IR2112STR IR SOP-806+有铅原装正品，马来西亚产地IR2112STRPBF IR SOP-807+无铅原装正品，马来西亚产地IR2113IR DIP-805+有铅原装正品，马来西亚产地IR2113S IR SOP-806+有铅原装正品，马来西亚产地IR2117IR DIP-805+有铅原装正品，马来西亚产地IR2117S IR SOP-806+有铅原装正品，马来西亚产地IR2151IR DIP-805+有铅原装正品，马来西亚产地IR2130S IR SOP-2805+有铅原装正品，马来西亚产地IR2132STR IR SOP-2805+有铅原装正品，马来西亚产地IR2153PBF IR DIP-806+无铅原装正品，马来西亚产地IR2520D IR DIP-806+有铅原装正品，马来西亚产地IR2520DPBF IR DIP-807+无铅原装正品，马来西亚产地IR2520DSTR IR SOP-806+有铅原装正品，马来西亚产地IRLZ24NPBF IR TO-22004+有铅原装正品，墨西哥产地型号品牌封装年份产地IR2153IR DIP-806+有铅原装正品，马来西亚产地IR2153STR IR SOP-805+有铅原装正品，马来西亚产地IR2153STRPBF IR SOP-807+无铅原装正品，马来西亚产地IR2155IR DIP-805+有铅原装正品，马来西亚产地IR2156PBF IR DIP-1406+无铅原装正品，马来西亚产地IR2156STRPBF IR SOP-1407+无铅原装正品，马来西亚产地IR2166IR DIP-1605+有铅原装正品，马来西亚产地IR2166S IR SOP-1606+无铅原装正品，马来西亚产地IR2184STRPBF IR SOP-807+无铅原装正品，马来西亚产地IRFD110PBF IR DIP06+无铅原装正品，马来西亚产地IRFD120PBF IR DIP07+无铅原装正品，马来西亚产地IRFD220IR DIP05+有铅原装正品，马来西亚产地IRFD9110IR DIP05+有铅原装正品，马来西亚产地IRFD9120PBF IR DIP07+无铅原装正品，马来西亚产地IRFD9220IR DIP05+有铅原装正品，马来西亚产地IRFR120NTRPBF IR SOT-25207+无铅原装正品，马来西亚产地IRFR024NTR IR SOT-25205+有铅原装正品，马来西亚产地IRFR024NTRPBF IR SOT-25207+无铅原装正品，马来西亚产地IRFR220NPBF IR SOT-25207+无铅原装正品，马来西亚产地IRFR420TR IR SOT-25206+有铅原装正品，马来西亚产地IRFR420TRPBF IR SOT-25207+无铅原装正品，马来西亚产地IRFR9024NTRPBF IR SOT-25207+无铅原装正品，马来西亚产地IRFR9120NTRPBF IR SOT-25207+无铅原装正品，马来西亚产地IRFU120NPBF IR TO-25107+无铅原装正品，墨西哥产地IRFU220NPBF IR TO-25107+无铅原装正品，墨西哥产地IRFU430A IR TO-25104+有铅原装正品，墨西哥产地IRFU9120NPBF IR TO-25107+无铅原装正品，墨西哥产地IRF7413TR IR SOP-806+有铅原装正品，马来西亚产地IRF7314TRPBF IR SOP-807+无铅原装正品，马来西亚产地IRFL9110TRPBF IR SOP-806+无铅原装正品，马来西亚产地IRL2203NPBF IR TO-22007+无铅原装正品，墨西哥产地IRL2703PBF IR TO-22007+无铅原装正品，墨西哥产地IRL3103PBF IR TO-22007+无铅原装正品，中国产地IRL3705N IR TO-22005+有铅原装正品，墨西哥产地IRL3803PBF IR TO-22007+无铅原装正品，墨西哥产地IRLML2402TRPBF IR SOT-2307+无铅原装正品，马来西亚产地IRLML2502TRPBF IR SOT-2307+无铅原装正品，马来西亚产地IRLML2803TRPBF IR SOT-2307+无铅原装正品，马来西亚产地IRLML5103TRPBF IR SOT-2307+无铅原装正品，马来西亚产地IRLML5203TRPBF IR SOT-2307+无铅原装正品，马来西亚产地IRLML6302TRPBF IR SOT-2307+无铅原装正品，马来西亚产地IRLML6401TRPBF IR SOT-2307+无铅原装正品，马来西亚产地IRLML6402TRPBF IR SOT-2307+无铅原装正品，马来西亚产地30CPQ060PBF IR TO-24707+无铅原装正品，中国产地30CPQ100PBF IR TO-24707+无铅原装正品，中国产地40CPQ045PBF IR TO-24707+无铅原装正品，中国产地40CPQ060PBF IR TO-24707+无铅原装正品，中国产地40CPQ100IR TO-24705+有铅原装正品，中国产地40CPQ100PBF IR TO-24707+无铅原装正品，中国产地MBR20100CTKPBF IR TO-22007+无铅原装正品，中国产地MBR6045WTPBF IR TO-24707+无铅原装正品，中国产地MUR420RLG ON DO-20107+无铅原装正品，菲律宾产地MUR460RLG ON DO-20107+无铅原装正品，菲律宾产地MUR860G ON TO-22007+无铅原装正品，菲律宾产地MUR8100EG ON TO-22007+无铅原装正品，菲律宾产地MUR1560G ON TO-22007+无铅原装正品，菲律宾产地MUR1620CTG ON TO-22007+无铅原装正品，菲律宾产地MUR1660CTG ON TO-22007+无铅原装正品，菲律宾产地MUR3020PTG ON TO-3P07+无铅原装正品，菲律宾产地MUR3040PTG ON TO-3P07+无铅原装正品，菲律宾产地MUR3060PTG ON TO-3P07+无铅原装正品，菲律宾产地MBR1545CTG ON TO-22007+无铅原装正品，菲律宾产地MBR2045CTG ON TO-22007+无铅原装正品，菲律宾产地MBR2545CTG ON TO-22007+无铅原装正品，菲律宾产地MBR20100CTG ON TO-22007+无铅原装正品，菲律宾产地MBR20200CTG ON TO-22006+无铅原装正品，菲律宾产地FQPF2N60C Fairchild TO-22007+无铅原装正品，韩国产地FQPF5N60C Fairchild TO-22007+无铅原装正品，韩国产地FQP5N60C Fairchild TO-22007+无铅原装正品，韩国产地FQPF8N60C Fairchild TO-22007+无铅原装正品，韩国产地FQP8N60C Fairchild TO-22007+无铅原装正品，韩国产地FQPF10N60C Fairchild TO-22007+无铅原装正品，韩国产地FQPF12N60C Fairchild TO-22007+无铅原装正品，韩国产地FQP50N06Fairchild TO-22007+无铅原装正品，韩国产地IRF630A Fairchild TO-22003+有铅原装正品，韩国产地IRF630B Fairchild TO-22006+无铅原装正品，韩国产地IRF634B Fairchild TO-22006+无铅原装正品，韩国产地IRF640B Fairchild TO-22005+有铅原装正品，韩国产地FGA25N120ANTDTU Fairchild TO-3P07+无铅原装正品，韩国产地STP19NB20FP ST TO-220F04+有铅原装正品，摩洛哥产地STW60N10ST TO-3P05+有铅原装正品，摩洛哥产地STTH1602CT ST TO-22007+无铅原装正品，摩洛哥产地STP55NF06ST TO-22007+无铅原装正品，中国产地STP60NF06ST TO-22007+无铅原装正品，摩洛哥产地STP75NF75ST TO-22007+无铅原装正品，中国产地L6561ST DIP-807+无铅原装正品，中国产地L6562ST DIP-807+无铅原装正品，中国产地L6562DTR ST SOP-807+无铅原装正品，中国产地2SC3320SC FUJI TO-3P07+无铅原装正品，菲律宾产地2SC2625-34SC FUJI TO-3P07+无铅原装正品，菲律宾产地ESAD92-02FUJI TO-3P07+无铅原装正品，菲律宾产地2SK2645FUJI TO-220F07+无铅原装正品，菲律宾产地 型 号品牌封装 年份产地IRFS630B FAIRchild TO-220F07+有铅原装正品，韩国产地IRFS640A FAIRchild TO-220F04+有铅原装正品，韩国产地IRF644B FAIRchild TO-22007+无铅原装正品，韩国产地IRF730FAIRchild TO-22004+有铅原装正品，韩国产地IRF740FAIRchild TO-22003+有铅原装正品，韩国产地IRF830FAIRchild TO-22003+有铅原装正品，韩国产地IRF840FAIRchild TO-22003+有铅原装正品，韩国产地MUR2020IR TO-22002+有铅原装正品，墨西哥产地STPS3045CP ST TO-24702+有铅原装正品，摩洛哥产地STPS30L40CW ST TO-24702+有铅原装正品，摩洛哥产地STPS40L40CW ST TO-24702+有铅原装正品，摩洛哥产地STPS40L45CW ST TO-24702+有铅原装正品，摩洛哥产地STPS4045ST TO-24702+有铅原装正品，摩洛哥产地SSS4N60B FAIRchild TO-220F05+无铅原装正品，韩国产地STP4NE60FP ST TO-220F03+有铅原装正品，摩洛哥产地BTA06-600B ST TO-22007+无铅原装正品，摩洛哥产地 BTA08-600B ST TO-22007+无铅原装正品，摩洛哥产地BTA12-600B ST TO-22007+无铅原装正品，摩洛哥产地BTA16-600B ST TO-22007+无铅原装正品，摩洛哥产地BTA26-600B ST TO-22007+无铅原装正品，菲律宾产地BTA41-600B ST TO-22007+无铅原装正品，菲律宾产地STTH5R60D ST TO-22004+有铅原装正品，摩洛哥产地BUK474-200A PHILIPS TO-220F02+有铅原装正品，菲律宾产地BYV74W-400PHILIPS TO-3P05+无铅原装正品，菲律宾产地TIP110ST TO-22005+无铅原装正品，摩洛哥产地BYV34-500PHILIPS TO-220F04+有铅原装正品，菲律宾产地PSMN009-100P PHILIPS TO-22004+有铅原装正品，菲律宾产地F20JC10新电元TO-220F05+无铅原装正品，日本产地ER1002FCT PEC TO-220F04+有铅原装正品，台湾产地F5KQ60新电元TO-220F03+有铅原装正品，日本产地K2611TOS TO-3P07+无铅原装正品，泰国产地K2837TOS TO-3P07+无铅原装正品，泰国产地K2698TOS TO-3P07+无铅原装正品，泰国产地K2699TOS TO-3P07+无铅原装正品，泰国产地K2645-01MR FUJI TO-220F07+无铅原装正品，菲律宾产地K2761-01MR FUJI TO-220F07+无铅原装正品，菲律宾产地K787NEC TO-3P05+无铅原装正品，日本产地K790TOS TO-3P05+无铅原装正品，泰国产地K791TOS TO-22005+无铅原装正品，泰国产地K793TOS TO-3P05+无铅原装正品，泰国产地K727-01FUJI TO-3P07+无铅原装正品，菲律宾产地K792TOS TO-220F07+无铅原装正品，泰国产地K851TOS TO-3P07+无铅原装正品，泰国产地K962FUJI TO-3P07+无铅原装正品，日本产地K956FUJI TO-3P07+无铅原装正品，日本产地K955FUJI TO-3P07+无铅原装正品，菲律宾产地K1018FUJI TO-3P07+无铅原装正品，菲律宾产地K1020FUJI TO-3PL07+无铅原装正品，菲律宾产地K1058HIT TO-3P07+无铅J162HIT TO-3P07+无铅K1081-01FUJI TO-3P07+无铅原装正品，菲律宾产地K1082FUJI TO-220F07+无铅原装正品，菲律宾产地K1117TOS TO-220F07+无铅原装正品，泰国产地K1118TOS TO-220F07+无铅原装正品，泰国产地K1119TOS TO-220F07+无铅原装正品，泰国产地K1120TOS TO-3P07+无铅原装正品，泰国产地K1180SAK TO-3P07+无铅K1358TOS TO-3P07+无铅原装正品，泰国产地K1507-01MR FUJI TO-220F07+无铅原装正品，菲律宾产地K1522HIT TO-3PL07+无铅K2545TOS TO-220F07+无铅原装正品，泰国产地K2662TOS TO-220F07+无铅原装正品，泰国产地K2750TOS TO-220F07+无铅原装正品，泰国产地K2746TOS TO-3P07+无铅原装正品，泰国产地K30-GR TOS TO-9207+无铅原装正品，泰国产地K1794HIT TO-3P07+无铅原装正品，菲律宾产地K1940-01FUJI TO-3P07+无铅原装正品，菲律宾产地BT169D PHILIPS TO-9208+无铅原装正品，中国产地BT136-600E PHILIPS TO-22008+无铅原装正品，中国产地BT137-600E PHILIPS TO-22008+无铅原装正品，中国产地BT138-600E PHILIPS TO-22008+无铅原装正品，中国产地BT139-600E PHILIPS TO-22008+无铅原装正品，中国产地BT151-500R PHILIPS TO-22008+无铅原装正品，中国产地BT152-600R PHILIPS TO-22008+无铅原装正品，中国产地BT131-600PHILIPS TO-9208+无铅原装正品，中国产地BT134-600E PHILIPS T0-25108+无铅原装正品，中国产地参数IRF510:100V,540mO,5.6A,43W IRF520N:100V,200mO,9.7A,48W IRF530N:100V,90mO,17A,79W IRF530:100V,160mO,14A,88W IRF540N:100V,44mO,33A,140W IRF540NS:100V,44mO,33A,130WIRL54N:100V,44mO,30A,94W IRF610:200V,1500mO,3.3A,36W IRF620:200V,800mO,5.2A,50W IRF630N:200V,300mO,9.5A,82WIRF630:200V,400mO,9A,74W IRF634:250V,450mO,8.1A,74W IRF640N:200V,150mO,18A,150W IRF640N:200V,150mO,18A,150W IRF640NS:200V,150mO,18A,150W IRF640:200V,180mO,18A,125W IRF644:250V,280mO,14A,125W IRF710:400V,3600mO,2A,36W IRF720:400V,1800mO,3.3A,50W IRF730:400V,1000mO,5.5A,74W IRF730:400V,1000mO,5.5A,74W IRF740:400V,550mO,10A,125W IRF820:500V,3KmO,2.5A,50W IRF830:500V,1500mO,4.5A,74W IRF840:500V,850mO,8A,125W IRF1010E:60V,12mO,81A,170W IRF1310N:100V,36mO,42A,160W IRF1404:40V,4mO,162A,200W IRF1405:55V,5.3mO,160A,310W IRF1405S:55V,5.3mO,131A,200W IRF1407:75V,7.8mO,130A,330W IRF2807:75V,13mO,82A,200W IRF2807S:75V,13mO,82A,230WIRF3205:55V,8mO,98A,150W IRF3315:150V,82mO,21A,94W IRF3415:150V,42mO,43A,200W IRF3710:100V,23mO,57A,200W IRF4905:-55V,20mO,-74A,200W IRF4905S:-55V,20mO,-64A,150W IRF4905:-55V,20mO,-74A,200W IRF5210:-100V,60mO,-40A,200W IRF5210S:-100V,60mO,-40A,200WIRF5305:-55V,60mO,-30A,110W IRFR5305:-55V,65mO,-31A,110W IRF5305S:-55V,60mO,-31A,110WIRF9510:-100V,1200mO,-4A,43W IRF9520:-100V,600mO,-6.8A,60W IRF9530:-100V,300mO,-12A,88W IRF9530N:-100V,200mO,-14A,79W IRF9540:-100V,200mO,-19A,150W IRF9540N:-100V,117mO,-23A,140W IRF9610:-200V,3000mO,-1.8A,20W IRF9630:-200V,800mO,-6.5A.74W IRF9640:-200V,500mO,-11A,125W IRF9640S:-200V,500mO,-11A,125W IRFZ24N:60V,70mO,17A,60WIRLZ24N:60V,60mO,17A,60WIRFZ34N:55V,40mO,26A,56W IRFZ44N:55V,17.5mO,41A,83WIRFZ44R:60V,28mO,50A,150W IRFZ44V:60V,16.5mO,55A,115W IRFZ44Z:55V,13.9mO,51A,90WIRLZ44N:60V,39mO,50A,150W IRFZ46N:55V,16.5mO,46A,88W IRFZ46N:55V,16.5mO,46A,88W IRFZ46Z:55V,13.6mO,51A,82WIRFZ48V:60V,12mO,72A,150WIRFZ48N:55V,14mO,64A,94W IRF9Z24N:-55V,175mO,-12A,45W IRF9Z34N:-55V,100mO,-17A,56W IRFBC30:600V,2200mO,3.6A,74W IRFBC40:600V,1200mO,6.2A,125W IRFBC40:600V,1200mO,6.2A,125W25IRFBE30:800V,3000mO,4.1A,125W IRFBG20:1000V,11000mO,1.4A,54W IRFBG30:1000V,5KmO,3.1A,125W IRFBG30:1000V,5KmO,3.1A,125W参数HFA08TB60:600V,8A,55ns8ETH06:600V,8A,30nsIRFB3207:75V,3.6mO,180A,330W IRFB4212:100V,72.5mO,18A,60W IRFB4310:100V,5.6mO,140A,330WIRFB4410:100V,8mO,96A,250W IRFB4710:100V,14mO,75A,200W IRFB11N50A:500V,520mO,11A,170W IRFB18N50K:500V,260mO,17A,220W IRFB31N20D:200V,82mO,31A,200W IRFB38N20D:200V,54mO,44A,320W IRFB260N:200V,40mO,56A,380WIRFP054N:55V,12mO,72A,130WIRFP064N:55V,8mO,98A,150WIRFP140N:100V,52mO,27A,94WIRFP150:100V,55mO,41A,140W IRFP150N:100V,36mO,39A,140W IRFP240:200V,180mO,20A,150W IRFP250N:200V,75mO,30A,214W IRFP254N:250V,125mO,23A,220W IRFP260N:200V,40mO,49A,300W IRFP260N:200V,40mO,49A,300WIRFP264:250V,75mO,38A,280W IRFP264N:250V,60mO,44A,380W IRFP350:400V,400mO,16A,190W IRFP360:400V,200mO,23A,280W IRFP448:500V,600mO,11A,180W IRFP450:500V,400mO,14A,190W IRFP450:500V,400mO,14A,190W IRFP450LC:500V,400mO,14A,190W IRFP460LC:500V,270mO,20A,280W IRFP460A:500V,270mO,20A,280W IRFP460A:500V,270mO,20A,280W IRFP460:500V,270mO,20A,280W IRFP2907:75V,4.5mO,177A,330W IRFP3710:100V,250mO,51A,180W IRFP9140N:-100V,117mO,-21A,120W IRFP9240:-200V,500mO,-12A,150W IRFP90N20D:200V,23mO,94A,580W IRFPC50:600V,600mO,11A,180W IRFPC60:600V,400mO,16A,280W IRFPE40:800V,2000mO,5.4A,150W IRFPE50:800V,1200mO,7.8A,190W IRFPF50:900V,1600mO,6.7A,190W IRFPG50:1000V,2000mO,6.1A,190W IRFPS37N50A:500V,130mO,36A,446W IRG4PC30F:600V,31A,100WIRG4PC40S:600V,60A,160WIRG4PC40W:600V,40A,160W IRG4BC20UD:600V,13A,60W IRG4BC30KD:600V,28A,100W IRG4BC40U:600V,40A,160W IRG4BC40W:600V,40A,160W IRG4PF50W:900V,51A,200W 40TPS12A:1200V,55AIRLZ24N:60V,60mO,17A,60W参数IRFD110:100V,540mO,1A,1.3WIRFD120:100V,270mO,1.3A,1.3WIRFD220:200V,800mO,0.8A,1.3W IRFD9110:-100V,1200mO,-0.7A,1.3W IRFD9120:-100V,600mO,-1A,1.3W IRFD9220:-200V,1500mO,-0.56A,1.3W IRFR120N:100V,210mO,9.1A,48WIRFR024N:55V,75mO,16A,38WIRFR024N:55V,75mO,16A,38WIRFR220N:200V,600mO,5A,43WIRFR420:500V,3000mO,2.4A,42WIRFR420:500V,3000mO,2.4A,42W IRFR9024N:-55V,0.175mO,-11A,38W IRFR9120N:-100V,480mO,6.6A,40WIRFU120N:100V,210mO,9.1A,48WIRFU220N:200V,600mO,5A,43WIRFU430A:500V,1700mO,5A,110W IRFU9120N:-100V,480mO,-6.5A,39WIRL2203N:30V,7mO,116A,180WIRL2703:30V,40mO,24A,45WIRL3103:30V,12mO,64A,94WIRL3705N:55V,10mO,89A,170WIRL3803:30V,9mO,120A,150W IRLML2402:20V,350mO,1.2A,0.54WIRLML2502:20V,80mO,4.2A,1.3W IRLML2803:30V,400mO,1.2A,0.54W IRLML5103:-30V,1KmO,-0.61A,0.54W IRLML5203:-30V,165mO,-3A,1.25W IRLML6302:-20V,900mO,-0.62A,0.54W IRLML6401:-12V,125mO,-4.3A,1.3W IRLML6402:-20V,135mO,-3.7A,1.3W30CPQ060:60V,30A30CPQ100:100V,30A40CPQ045:45V,40A40CPQ060:60V,40A40CPQ100:100V,40A40CPQ100:100V,40AMBR20100CTK:100V,20AMBR6045WT:45V,60AMUR420:200V,4AMUR460:600V,4AMUR860:600V,8AMUR8100E:1000V,8AMUR1560:600V,15AMUR1620CT:200V,16AMUR1660CT:600V,16AMUR3020PT:200V,30AMUR3040PT:400V,30AMUR3060PT:600V,30AMBR1545CT:45V,15AMBR2045CT:45V,20AMBR2545CT:45V,25AMBR20100CT:100V,20AMBR20200CT:200V,20A FQPF2N60C:600V,4700mO,2A,23W FQPF5N60C:600V,2500mO,4.5A,33W FQP5N60C:600V,2500mO,4.5A,100W FQPF8N60C:600V,1200mO,7.5A,48W FQP8N60C:600V,1200mO,7.5A,147W FQPF10N60C:600V,730mO,9.5A,50W FQPF12N60C:600V,650mO,12A,51WFQP50N06:60V,22mO,50A,120WIRF630A:200V,400mO,9A,72WIRF630B:200V,400mO,9A,72W IRF634B:250V,450mO,8.1A,74W IRF640B:200V,180mO,18A,139WFGA25N120AN:1200V,25A,125W STP19NB20FP:200V,150mO,10A,125W STW60N10:100V,25mO,60A,200WSTTH1602CT:200V,16ASTP55NF06:60V,17mO,50A,110W STP60NF06:60V,14mO,60A,110W STP75NF75:75V,11mO,80A,300W2SC3320:500V,15A,80W2SC2625:450V,10A,80WESAD92-02:200V,20A2SK2645:600V,1200mO,9A,50W参数IRFS630B:200V,400mO,9A.72WIRFS640A:200V,180mO,18A139WIRF644B:250V,280mO,14A,125WIRF730:400V,1000mO,5.5A,74WIRF740:400V,550mO,10A,125WIRF830:500V,1500mO,4.5A,74WIRF840:500V,850mO,8A,125WMUR2020：20A，200VSTPS3045：30A，45VSTPS30L40：30A，40VSTPS40L40：40A，40VSTPS40L45：40A，45VSTPS4045：40A，45VSSS4N60B:4A,600V，2.5Ω，33W STP4NE60FP：4A。
IRFU120NPBF中文资料
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE AS SEMBLY LINE "A" Note: "P" in ass embly line pos ition indicates "Lead-F ree" PART NUMBER INT ERNAT IONAL RECT IF IER LOGO
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
ASS EMBLY LOT CODE
8
元器件交易网
IRFR/U120NPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
IRFU120 12 916A 34
AS SEMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A
OR
PART NUMBER INT ERNAT IONAL RECT IF IER LOGO
IRF9640PBF中文资料
Power MOSFETIRF9640, SiHF9640Vishay SiliconixFEATURES•Dynamic dV/dt Rating•Repetitive Avalanche Rated •P-Channel •Fast Switching •Ease of Paralleling•Simple Drive Requirements •Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = - 50 V, starting T J = 25 °C, L = 8.7 mH, R G = 25 Ω, I AS = - 11 A (see fig. 12).c.I SD ≤ - 11 A, dI/dt ≤ 150 A/µs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from case.PRODUCT SUMMARYV DS (V)- 200R DS(on) (Ω)V GS = - 10 V0.50Q g (Max.) (nC)44Q gs (nC)7.1Q gd (nC)27ConfigurationSingleTO-220GDSORDERING INFORMATIONPackage TO-220Lead (Pb)-free IRF9640PbF SiHF9640-E3 SnPbIRF9640SiHF9640ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS- 200VGate-Source Voltage V GS ± 20 V Continuous Drain Current V GS at - 10 VT C = 25 °C I D- 11A T C = 100 °C- 6.8Pulsed Drain Current a I DM - 44Linear Derating Factor1.0W/°C Single Pulse Avalanche Energy b E AS 700mJ Repetitive Avalanche Current a I AR - 11 A Repetitive Avalanche Energy a E AR 13mJ Maximum Power Dissipation T C = 25 °CP D 125WPeak Diode Recovery dV/dt cdV/dt - 5.0V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 150°C Soldering Recommendations (Peak Temperature)for 10 s 300d Mounting Torque6-32 or M3 screw10 lbf · in1.1N · m* Pb containing terminations are not RoHS compliant, exemptions may applyIRF9640, SiHF9640Vishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSARAMETER SYMBOL TY.MAX.UNIT Maximum Junction-to-Ambient R thJA -62°C/WCase-to-Sink, Flat, Greased Surface R thCS 0.50-Maximum Junction-to-Case (Drain)R thJC- 1.0IRF9640, SiHF9640Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise notedFig. 1 - Typical Output Characteristics, T C = 25 °C Fig. 2 - Typical Output Characteristics, T C = 150 °C Fig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. TemperatureIRF9640, SiHF9640 Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating AreaIRF9640, SiHF9640Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time WaveformsFig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive WaveformsIRF9640, SiHF9640Vishay SiliconixFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test CircuitIRF9640, SiHF9640Vishay Siliconix Array Fig. 14 - For P-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see /ppg?91086.Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。
常用近500个三极管(MOSFET)中文资料
9011,9012,9013,9014,8050,8550三极管的区别9011 NPN 30V 30mA 400mW 150MHz 放大倍数20-809012 PNP 50V 500mA 600mW 低频管放大倍数30-909013 NPN 20V 625mA 500mW 低频管放大倍数40-1109014 NPN 45V 100mA 450mW 150MHz 放大倍数20-908050 NPN 25V 700mA 200mW 150MHz 放大倍数30-1008550 PNP 40V 1500mA 1000mW 200MHz 放大倍数40-140详情如下：90系列三极管参数90系列三极管大多是以90字为开头的，但也有以ST90、C或A90、S90、SS90、UTC90开头的，它们的特性及管脚排列都是一样的。
9011 结构：NPN集电极-发射极电压30V集电极-基电压50V射极-基极电压5V集电极电流0.03A耗散功率0.4W结温150℃特怔频率平均370MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-1989012 结构：PNP集电极-发射极电压-30V集电极-基电压-40V射极-基极电压-5V集电极电流0.5A耗散功率0.625W结温150℃特怔频率最小150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009013 结构：NPN集电极-发射极电压25V集电极-基电压45V射极-基极电压5V集电极电流0.5A耗散功率0.625W结温150℃特怔频率最小150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009014 结构：NPN集电极-发射极电压45V集电极-基电压50V射极-基极电压5V集电极电流0.1A耗散功率0.4W结温150℃特怔频率最小150MHZ放大倍数：A60-150 B100-300 C200-600 D400-10009015 结构：PNP集电极-发射极电压-45V集电极-基电压-50V射极-基极电压-5V集电极电流0.1A耗散功率0.45W结温150℃特怔频率平均300MHZ放大倍数：A60-150 B100-300 C200-600 D400-10009016 结构：NPN集电极-发射极电压20V集电极-基电压30V射极-基极电压5V集电极电流0.025A耗散功率0.4W结温150℃特怔频率平均620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-1989018 结构：NPN集电极-发射极电压15V集电极-基电压30V射极-基极电压5V集电极电流0.05A耗散功率0.4W结温150℃特怔频率平均620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-198三极管85508550是一种常用的普通三极管。
IRFU014PBF中文资料
3
元器件交易网
IRFR/U014PbF
4
元器件交易网
IRFR/U014PbF
5
元器件交易网
IRFR/U014PbF
6
元器件交易网
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS dt
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
元器件交易网
IRFR014PbF IRFU014PbF
PD-95065A
•
Lead-Free
1
12/10/04
元器件交易网
IRFR/U014PbF
2
元器件交易网
IRFR/U014PbF
+ +
-
• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test
IRF840AL规格书
Min. Typ. Max. Units
Conditions D MOSFET symbol ––– ––– 8.0 showing the A G integral reverse ––– ––– 32 S p-n junction diode. ––– ––– 2.0 V TJ = 25°C, IS = 8.0A, VGS = 0V ––– 422 633 ns TJ = 25°C, IF = 8.0A ––– 2.0 3.0 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
3
IRF840AS/L
100000
20
VGS , Gate-to-Source Voltage (V)
Min. 500 ––– ––– 2.0 ––– ––– ––– ––– Min. 3.7 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.58 ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 11 23 26 19 1018 155 8.0 1490 42 56
Max.
8.0 5.1 32 125 3.1 1.0 ± 30 5.0 -55 to + 150 300 (1.6mm from case )
irf840工作原理
irf840工作原理
IRF840是一种功率MOSFET晶体管，其工作原理是基于功率MOSFET的原理。
MOSFET（金属-氧化物-半导体场效应晶体管）是一种基于场效应原理的三极管。
在MOSFET中，有三个电极：栅极（G），漏极（D）和源极（S）。
源极和漏极之间的电流由栅极-源极电压（VGS）控制。
当栅极-源极电压大于MOSFET 的阈值电压时，MOSFET通导，形成一个导通的通道，电流从漏极流过。
当栅极-源极电压小于阈值电压时，MOSFET处于截止状态，没有电流通过。
IRF840是一种N沟道MOSFET，意味着通道中的载流子是n 型电子。
它具有较低的导通电阻和较高的功率处理能力。
IRF840的工作电压范围很广，通常在10V到500V之间。
它的漏极电流（ID）和漏极-源极电压（VDS）之间的关系是线性关系。
IRF840晶体管主要用于功率放大器、开关电源、变频器等高电压、高功率应用。
WFP840中文资料
Drain Current Pulsed
Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
2.0 VGS = 20V
1.5
1.0
※ Note : TJ = 25℃
0.5
0
5
10
15
20
25
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
2500 2000 1500
-- 150 195
pF
--
15
20
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
IRF840B_NL中文资料
--
--
8.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
32
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.0 A
--
--
1.4
V
trr
Reverse Recovery Time
©2005 Fairchild Semiconductor Corporation
Rev. B, February 2005
元器件交易网
IRF840B/IRFS840B
Typical Characteristics
ID, Drain Current [A]
Drain-SouRrDcS(eON)O[n-ΩR],esistance
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
10 100 100 -100
V
V/°C
µA µA nA nA
On Characteristics
VGS(th) Gate Threshold Voltage
3.0
2.5 VGS = 10V
2.0 VGS = 20V
1.5
1.0
※ Note : TJ = 25℃
0.5
0
5
10
15
20
25
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
常用近500个三极管(MOSFET)中文资料
9011,9012,9013,9014,8050,8550三极管的区别9011 NPN 30V 30mA 400mW 150MHz 放大倍数20-809012 PNP 50V 500mA 600mW 低频管放大倍数30-909013 NPN 20V 625mA 500mW 低频管放大倍数40-1109014 NPN 45V 100mA 450mW 150MHz 放大倍数20-908050 NPN 25V 700mA 200mW 150MHz 放大倍数30-1008550 PNP 40V 1500mA 1000mW 200MHz 放大倍数40-140详情如下：90系列三极管参数90系列三极管大多是以90字为开头的，但也有以ST90、C或A90、S90、SS90、UTC90开头的，它们的特性及管脚排列都是一样的。
9011 结构：NPN集电极-发射极电压30V集电极-基电压50V射极-基极电压5V集电极电流0.03A耗散功率0.4W结温150℃特怔频率平均370MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-1989012 结构：PNP集电极-发射极电压-30V集电极-基电压-40V射极-基极电压-5V集电极电流0.5A耗散功率0.625W结温150℃特怔频率最小150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009013 结构：NPN集电极-发射极电压25V集电极-基电压45V射极-基极电压5V集电极电流0.5A耗散功率0.625W结温150℃特怔频率最小150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009014 结构：NPN集电极-发射极电压45V集电极-基电压50V射极-基极电压5V集电极电流0.1A耗散功率0.4W结温150℃特怔频率最小150MHZ放大倍数：A60-150 B100-300 C200-600 D400-10009015 结构：PNP集电极-发射极电压-45V集电极-基电压-50V射极-基极电压-5V集电极电流0.1A耗散功率0.45W结温150℃特怔频率平均300MHZ放大倍数：A60-150 B100-300 C200-600 D400-10009016 结构：NPN集电极-发射极电压20V集电极-基电压30V射极-基极电压5V集电极电流0.025A耗散功率0.4W结温150℃特怔频率平均620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-1989018 结构：NPN集电极-发射极电压15V集电极-基电压30V射极-基极电压5V集电极电流0.05A耗散功率0.4W结温150℃特怔频率平均620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-198三极管85508550是一种常用的普通三极管。
IRFB4110PBF中文资料
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Coss
Output Capacitance
––– 670 –––
Crss
Reverse Transfer Capacitance
––– 250 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related)i ––– 820 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 950 –––
Max. 180c 130c 670 370
2.5 ± 20 5.3 -55 to + 175
300
10lbxin (1.1Nxm)
210 75 37
Typ. ––– 0.50 –––
Max. 0.402 –––
62
Units A
W W/°C
V V/ns °C
mJ A mJ Units °C/W
1
11/3/05
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value.
mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C.
IRF840中文特性
１）V DS :最大工作电压５００v
.２）V DG(20KΩ)耐压５００Ｖ。
３）Ｖ GS 栅源电压正负２０Ｖ
４）ＩＤ２５度时８Ａ,１ＯＯ度时５．１Ａ
５）ＩＤＭ最大工作电流３２Ａ
６）Ｐtot 温度２５度时峰值功率１２５Ｗ
７）Ｄv/Ｄt 二极管恢复电压峰值斜率3.5v/ns
８）工作温度范围－６５－－－－１５０度
要使增强型N沟道MOSFET工作，要在G、S之间加正电压VGS及在D、S之间加正电压VDS，则产生正向工作电流ID。
改变VGS的电压可控制工作电流ID
MOSFET全称功率场效应晶体管。
它的三个极分别是源极(S)、漏极(D)和栅极(G)。
主要优点：热稳定性好、安全工作区大。
缺点：击穿电压低，工作电流小。
IGBT全称绝缘栅双极晶体管，是MOSFET和GTR(功率晶管)相结合的产物。
它的三个极分别是集电极(C)、发射极(E)和栅极(G)。
特点：击穿电压可达1200V，集电极最大饱和电流已超过1500A。
由IGBT作为逆变器件的变频器的容量达250kVA以上，工作频率可达20kHz。
IRF840资料
1/8May 2002IRF840N-CHANNEL 500V - 0.75Ω - 8A TO-220PowerMesh™II MOSFETs TYPICAL R DS (on) = 0.75 Ωs EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTEDs NEW HIGH VOLTAGE BENCHMARK sGATE CHARGE MINIMIZEDDESCRIPTIONThe PowerMESH ™II is the evolution of the first generation of MESH OVERLAY ™. The layout re-finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing edge for what concerns switching speed, gate charge and ruggedness.APPLICATIONSs HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS)s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVESABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating areaTYPE V DSS R DS(on)I D IRF840500 V< 0.85 Ω8 ASymbol ParameterValue UnitV DS Drain-source Voltage (V GS = 0)500V V DGR Drain-gate Voltage (R GS = 20 k Ω)500V V GS Gate- source Voltage± 20V I D Drain Current (continuos) at T C = 25°C 8A I D Drain Current (continuos) at T C = 100°C 5.1A I DM (l )Drain Current (pulsed)32A P TOTTotal Dissipation at T C = 25°C 125W Derating Factor1.0W/°C dv/dt (1)Peak Diode Recovery voltage slope 3.5V/ns T stg Storage Temperature–65 to 150°C T jMax. Operating Junction Temperature150°CSD DD (BR)DSS j JMAX.IRF8402/8THERMAL DATAAVALANCHE CHARACTERISTICSELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFON (1)DYNAMICRthj-case Thermal Resistance Junction-case Max 1°C/W Rthj-ambThermal Resistance Junction-ambient Max62.5°C/W T lMaximum Lead Temperature For Soldering Purpose300°CSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)8A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)520mJSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 0500V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max Rating1µA V DS = Max Rating, T C = 125 °C 50µA I GSSGate-body Leakage Current (V DS = 0)V GS = ± 20V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250µA 234V R DS(on)Static Drain-source On ResistanceV GS = 10V, I D = 3.5 A0.750.85ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS > I D(on) x R DS(on)max, I D =3.5A6.4S C iss Input Capacitance V DS = 25V, f = 1 MHz, V GS = 0832pF C oss Output Capacitance 131pF C rssReverse Transfer Capacitance17pF3/8IRF840ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODENote: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2.Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise Time V DD = 250 V, I D = 3.5 A R G =4.7Ω V GS = 10 V (see test circuit, Figure 3)1021ns ns Q g Total Gate Charge V DD = 400V, I D = 7 A,V GS = 10V29.639nC Q gs Gate-Source Charge 4.9nC Q gdGate-Drain Charge13.9nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t r(Voff)Off-voltage Rise TimeV DD = 400V, I D = 7 A, R G =4.7Ω, V GS = 10V (see test circuit, Figure 5)9ns t f Fall Time 9ns t cCross-over Time19nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD Source-drain Current 8A I SDM (2)Source-drain Current (pulsed)32A V SD (1)Forward On Voltage I SD = 8 A, V GS = 0 1.6V t rr Reverse Recovery Time I SD = 7 A, di/dt = 100A/µs V DD = 100V, T j = 150°C (see test circuit, Figure 5)384ns Q rr Reverse Recovery Charge 2.2µC I RRMReverse Recovery Current11.8ASafe Operating Area Thermal ImpedenceIRF8404/8IRF8405/8IRF8406/8Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery TimesFig. 4: Gate Charge test CircuitFig. 2: Unclamped Inductive WaveformFig. 1:Unclamped Inductive Load Test CircuitFig. 3: Switching Times Test Circuit ForResistive LoadIRF8407/8IRF8408/8Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2002 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.© 。
VISHAY IRF840B D Series Power MOSFET Owner’s Manua
Manuals+— User Manuals Simplified.VISHAY IRF840B D Series Power MOSFET Owner’s Manual Home » VISHAY » VISHAY IRF840B D Series Power MOSFET Owner’s ManualVISHAY IRF840B D Series Power MOSFETContents1 D Series Power MOSFET1.1 FEATURES1.2 APPLICATIONS2 TYPICAL CHARACTERISTICS2.1 Peak Diode Recovery dV/dt TestCircuit3 TO-220-14 Disclaimer5 Documents / Resources5.1 References6 Related PostsD Series Power MOSFETPRODUCT SUMMARYV (V) at T max.550R max. (Ù) at 25 °C V = 10 V 0.85Q max. (nC)30Q (nC)4Q (nC)7Configuration SingleFEATURESOptimal design– Low area specific on-resistance– Low input capacitance (Ciss)– Reduced capacitive switching losses– High body diode ruggedness– Avalanche energy rated (UIS)Optimal efficiency and operation– Low cost– Simple gate drive circuitry– Low figure-of-merit (FOM): Ron x Qg– Fast switchingMaterial categorization: for definitions of compliance please see /doc99912Note* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information /tables in this datasheet for detailsAPPLICATIONSConsumer electronics– Displays (LCD or plasma TV)Server and telecom power suppliesDS J DS(on)GS g gs gd– SMPSIndustrial– Welding– Induction heating– Motor drivesBattery chargersORDERING INFORMATIONPackage TO-220ABLead (Pb)-free IRF840BPbFLead (Pb)-free and halogen-free IRF840BPbF-BE3ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 500V Gate-source VoltageVGS± 30Gate-source voltage AC (f > 1 Hz)30Continuous drain current (T = 150 °C)V at 10VT = 25 °CI 8.7 AT = 100°C 5.5Pulsed drain current a IDM 18Linear derating factor 1.25W/°C C J GS C D CSingle pulse avalanche energy b EAS 56mJ Maximum power dissipation P 156WOperating junction and storage temperature range TJ, Tstg -55 to +150°CDrain-source voltage slope T = 125 °CdV/dt 24V/nsReverse diode dV/dt d0.37Soldering recommendations (peak tem perature) c For 10 s 300°CNotesa . Repetitive rating; pulse width limited by maximum junction temperatureb. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 Ω, IAS = 7 Ac. 1.6 mm from cased. ISD ≤ ID, starting TJ = 25 °CTHERMAL RESISTANCE RATINGSPARAMETER SYMBOL TYP.MAX.UNITMaximum junction-to-ambient RthJA –62°C/WMaximum junction-to-case (drain)RthJC –0.8SPECIFICATIONS (T = 25 °C, unless otherwise noted)D J JPARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNI TStaticDrain-source breakdown voltage VDS V = 0 V, I = 250 μA 500––V V temperature coefficient ÄV /T Reference to 25 °C, I = 250 μA –0.58–V/°C Gate-source threshold voltage (N)VGS(th)V = V , I = 250 μA 3–5V Gate-source leakage IGSS V = ± 30 V ––± 100nAZero gate boltage drain current IDSS V = 500 V, V = 0 V––1μAV = 400 V, V = 0 V, T = 125°C ––10Drain-source on-state resistance RDS(on)V = 10V I = 4 A –0.700.85ÙForward transconductance a gfs V = 20 V, I = 4 A –3–S DynamicInput capacitance Ciss V = 0 V, V = 100 V, f = 1 MHz –527–Output capacitance Coss–52–GS D DS DS J D DS GS D GS DS GS DS GS J GS D DS D GS DSReverse transfer capacitance Crss –8–pFEffective output capacitance, energy related b Co(er)V = 0 V to 400 V, V = 0 V–46–Effective output capacitance, time related c Co(tr)–64–Total gate charge Q V = 10VI = 4 A, V = 400V –1530 nCGate-source charge Qgs –4–Gate-drain charge Qgd –7–Turn-on delay time td(on)V = 400 V, I = 4 A R = 9.1 Ù,V = 10 V –1326ns Rise time t –1632Turn-off delay time td(off)–1734Fall time t –1122Gate input resistance R f = 1 MHz, open drain – 1.8–ÙDrain-Source Body Diode CharacteristicsContinuous source-drain diodecurrent I MOSFET symbols owing the integral reverse p – n junction diode––8ADS GS gGS D DS DD D g GS r f g SPulsed diode forward current ISM ––32Diode forward voltage VSD T = 25 °C, I = 4 A, V = 0 V –– 1.2V Reverse recovery time trrT = 25 °C, I = I = 4 A,dI/dt = 100 A/μs, V = 20 V –308–nsReverse recovery charge Qrr – 1.8–μCReverse recovery current IRRM –11–A Notesa. Repetitive rating; pulse width limited by maximum junction temperatureb. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSSc. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 %VDSSTYPICAL CHARACTERISTICS(25 °C, unless otherwise noted)J S GS J F S RPeak Diode Recovery dV/dt Test CircuitVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents suchTO-220-1DIM.MILLIMETERSINCHES MIN.MAX.MIN.MAX.A 4.24 4.650.1670.183b 0.69 1.020.0270.040b(1) 1.14 1.780.0450.070c0.360.610.0140.024D14.3315.850.5640.624E9.9610.520.3920.414e 2.41 2.670.0950.105e(1) 4.88 5.280.1920.208F 1.14 1.400.0450.055H(1) 6.10 6.710.2400.264 J(1) 2.41 2.920.0950.115L13.3614.400.5260.567 L(1) 3.33 4.040.1310.159Ø P 3.53 3.940.1390.155Q 2.54 3.000.1000.118ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031NoteM* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVMDisclaimerALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Documents / ResourcesVISHAY IRF840B D Series Power MOSFET [pdf] Owner's ManualIRF840B D Series Power MOSFET, IRF840B, D Series Power MOSFET, Power MOSFET, MOSFETReferencesapplications.no/doc?91000IRF840B D Series Power MOSFET | VishayManuals+,。