D2220UK中文资料

D2220UK
P D
Power Dissipation
BV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage I D(sat)Drain Current
T stg Storage Temperature
T j
Maximum Operating Junction Temperature
17.5W 40V ±20V 4A
–65 to 150°C
200°C
MECHANICAL DATA
12
34
8
765
M
N
B
C
A
E F
G
D
H
K
L
J
P
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS RF FET 5W – 12.5V – 1GHz SINGLE ENDED
FEATURES
•SIMPLIFIED AMPLIFIER DESIGN
•SUITABLE FOR BROAD BAND APPLICATIONS
•VERY LOW C rss
•SIMPLE BIAS CIRCUITS •LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
SO8 PACKAGE
PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE
PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE
ABSOLUTE MAXIMUM RATINGS (T case = 25°C unless otherwise stated)
APPLICATIONS
•HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz
Dim.A B C D E F G H J K L M N P
mm Tol.Inches Tol.4.06±0.080.160±0.0035.08±0.080.200±0.0031.27±0.080.050±0.0030.51±0.080.020±0.0033.56±0.080.140±0.0034.06±0.080.160±0.0031.65±0.080.065±0.003+0.25+0.0100.760.030-0.00-0.0000.51Min.0.020Min.1.02Max.0.040Max.45°Max.45°Max.0°Min.0°Min.7°Max.7°Max.0.20±0.080.008±0.0032.18Max.0.086Max.4.57±0.08
0.180±0.003
METAL GATE RF SILICON FET
TetraFET
D2220UK
Parameter Test Conditions Min.
Typ.Max.Unit
Drain–Source BV DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current I GSS Gate Leakage Current V GS(th)Gate Threshold Voltage*
g fs Forward Transconductance*G PS Common Source Power Gain ηDrain Efficiency VSWR Load Mismatch Tolerance
C iss Input Capacitance C oss Output Capacitance
C rss
Reverse Transfer Capacitance
V GS = 0I D = 10mA V DS = 12.5V V GS = 0V GS = 20V V DS = 0I D = 10mA V DS = V GS V DS = 10V I D = 0.2A
P O = 5W V DS = 12.5V I DQ = 0.2A f = 1GHz V DS = 0V
V GS = –5V f = 1MHz
V DS = 12.5V V GS = 0 f = 1MHz V DS = 12.5V V GS = 0
f = 1MHz
V
mA µA V S dB %—
pF pF pF
ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise stated)
40
210.57
0.36104020:124202
R THj–case
Thermal Resistance Junction – Case
Max. 6°C / W
THERMAL DATA
* Pulse Test:Pulse Duration = 300 µs , Duty Cycle ≤2%。