IRLR120NTRL中文资料
GREAmerica PSR-120 中文说明书
一旦你理解了本手册中使用的一些简单的术语，熟悉扫描仪的功能， 你可以把扫描仪为你工作。您只需确定你想要的类型的通信 接收，然后将扫描仪进行扫描。
的频率是接收信号的位置（kHz 或 MHz）。找到活动的频率，你可以使用 搜索或调整功能。
当你找到一个频率，你可以把它存储到一个可编程存储器单元称为一个通道，这 是 与其他信道进行分组一个通道存储银行中。然后，您可以扫描通道存储银行 存储在那里的频率是否有活动。每次扫描仪找到一个活动的频率，它停留在 该通道，直到发送结束。这种扫描仪具有独立的通道扫描仪模式之间的位置 （共 300 个通道）和 FM 收音机模式（共 20 个通道）。
3。 装入三节 AA 电池，匹配的极性符号（+， - ）标记内。
4。 更换的电池仓盖。 设置的 ALK 如果您使用碱性 batteriesSet 如果您使用的镍氢（Ni-MH）充电 镍氢（Ni-MH）电池
警告：切勿安装碱性电池，镍氢（Ni-MH）电池类型选择开关设置。碱性 电池会变热，或爆炸，如果您尝试充电。
交通安全
驾驶机动车或骑自行车时不要戴耳机或耳机与您的扫描仪 或附近的交通。这样做可能会造成交通事故的危险，并在某些领域可能是非法的。
如果您在使用耳机或耳机与您的扫描仪，而骑自行车时，要非常小心。不要听 一个连续的广播。尽管一些耳机和耳机让你听到一些外界的声音， 当你听到他们在正常水平，还可以出现的交通危险。
警告：为避免触电，请勿使用 AC 适配器的极化插头的扩展名 电源线，插座或其它电源插座，除非你能完全插入，以防止刀片的刀片 曝光。
充电电池
本机的充电方法是最简单的充电方法。
，而他们在你的扫描仪可充电镍金属氢化物（镍氢）充电电池（不提供） 扫描仪。确保安装了镍氢（Ni-MH）电池和镍氢（Ni-MH）电池类型选择开关设 置为。对 为充电电池进行充电，则需要使用附带的 AC 适配器。
IRL540N中文资料
IRL540N®PD - 91495A5/13/98ParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS @ 10V 36I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 26A I DMPulsed Drain Current 120P D @T C = 25°C Power Dissipation 140W Linear Derating Factor 0.91W/°C V GS Gate-to-Source Voltage± 16V E AS Single Pulse Avalanche Energy 310mJ I AR Avalanche Current18A E AR Repetitive Avalanche Energy 14mJ dv/dt Peak Diode Recovery dv/dt 5.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds 300 (1.6mm from case )°CMounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m)Absolute Maximum RatingsParameterTyp.Max.UnitsR θJC Junction-to-Case––– 1.1R θCS Case-to-Sink, Flat, Greased Surface 0.50–––°C/WR θJAJunction-to-Ambient–––62Thermal ResistanceDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220contribute to its wide acceptance throughout the industry.l Logic-Level Gate Drivel Advanced Process Technology l Dynamic dv/dt Ratingl 175°C Operating Temperature l Fast SwitchinglFully Avalanche RatedIRL540NIRL540NIRL540NIRL540NIRL540NIRL540NIRL540NNote: For the most current drawings please refer to the IR website at:/package/。
IRLR120N中文资料
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
10
100
A
100
V D S , D rain-to-S ource V oltage (V )
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994
IRLZ24N中文资料
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
18 72
MOSFET symbol A showing the
TOP BOTTOM
VGS
15V 12V 10V
8.0V 6.0V
4.0V
3.0V 2.5V
1
0.1 0.1
2.5V
20µs PULSE WIDTH
TJ = 25°C A
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
VGS = 5.0V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
7.1
VDD = 28V
tr td(off) tf
Rise Time Turn-Off Delay Time Fall Time
74 ns ID = 11A
20
nA
VGS = 16V VGS = -16V
Qg
Total Gate Charge
15
ID = 11A
Qgs
Gate-to-Source Charge
3.7 nC VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
场效应管资料
标题:IRC场效应管参数作者:日期:2009-02-14 19:34:37内容:IRC系列N-CHANNELPOWER MOSFET 功率场效应管型号参数查询及代换型号厂家方式漏源极电压(V)区分漏极电流(A)最大功耗(W)封装形式IRC150IRN10030(TO-204AE)IRC250IRN20029(TO-204AE)IRC254IRN25022.2(TO-204AE)IRC350IRN40014.5(TO-204AA)IRC450IRN50012.2(TO-204AA)IRC530IRN1001475(TO-220)IRC531IRN801479TO-220IRC533IRN601275TO-220IRC540IRN10028150TO-220IRC630IRN200974TO-204AAIRC634IRN2508.774TO-220IRC640IRN20018125TO-220IRC644IRN25014125TO-220IRC730IRN4005.574TO-204AAIRC740IRN40010125TO-204AAIRC830IRN5004.574TO-204AAIRC832IRN5004.074TO-220IRC833IRN4503.875TO-220IRC840IRN5008125TO-220IRCP054IRN6070230TO-247ACIRCZ24IRN601760TO-204AAIRCZ34IRN603088TO-204AAIRCZ44IRN6050150TO-204AA标题:IRFB系列场效应管参数代换作者:日期:2009-02-14 19:50:52内容:IRFB系列POWER MOSFET N沟道功率场效应管型号参数查询及代换型号Drain-to-Source Voltage漏极到源极电压Static Drain-SourceOn-State Resistance静态漏源通态电阻Continuous Drain Current漏极连续电流(TC=25℃)PD Total Power Dissipation 总功率耗散(TC=25℃）Package封装Toshiba Replacement 替换东芝型号Vender 供应商VDSSRDS(ON)IDPD(V)(ohm)欧姆(A)(W)IRFBC10LC600101.236TO-220AB2SK3067IRIRFBC206004.42.250TO-220AB2SK3067IRIRFBC20L6004.42.250TO-2622SK2865IRIRFBC20S6004.42.250D2PAK2SK2865IRIRFBC306002.23.674TO-220AB2SK3085IRIRFBC30L6002.23.674TO-2622SK2777IRIRFBC30S6002.23.674D2PAK2SK2777IRIRFBC406001.26.2125TO-220AB2SK2544IRIRFBC40L6001.26.2130TO-2622SK2777IRIRFBC40LC6001.26.2125TO-220AB2SK2544IRIRFBC40S6001.26.2130D2PAK2SK2777IRIRFBC42R6001.65.4TO-220AB2SK2544HarrisIRFBE208006.51.854TO-220AB2SK2603IRIRFBE3080034.1125TO-220AB2SK2603IRIRFBF2090081.754TO-220AB2SK2733IRIRFBF20L90081.754TO-2622SK2845IRIRFBF20S90081.754D2PAKIRIRFBF309003.73.6125TO-220AB2SK2608IRIRFBG201000111.454TO-220AB2SK1119IRIRFBG30100053.1125TO-220AB2SK1119IR标题:IRFD系列场效应管参数及代换作者:日期:2009-02-14 19:40:53内容:IRFD系列POWER MOSFET P沟道及N沟道功率场效应管型号参数查询及代换带有"-"号的参数为P沟道场效应管,没注明的均为N沟道场效应管.型号Drain-to-Source Voltage漏极到源极电压Static Drain-SourceOn-State Resistance静态漏源通态电阻Continuous Drain Current漏极连续电流(TC=25℃)PD Total Power Dissipation 总功率耗散(TC=25℃）Package封装Toshiba Replacement 替换东芝型号Vender 供应商VDSSRDS(ON)IDPD(V)(ohm)欧姆(A)(W)IRFD014600.21.71.3DIPIRIRFD014600.21.71.3HEXDIPIR IRFD024600.12.51.3DIPIRIRFD024600.12.51.3HEXDIPIR IRFD1101000.5411.3DIPIR IRFD1101000.5411.3HEXDIPIR IRFD111(R)800.61DIPHarris IRFD112(R)1000.80.8DIPHarris IRFD113(R)800.80.8DIPHarris IRFD1201000.271.31.3DIPIR IRFD1201000.271.31.3HEXDIPIR IRFD121(R)800.31.3DIPHarris IRFD122(R)1000.41.1DIPHarris IRFD123(R)800.41.1DIPHarris IRFD1Z01002.40.51.3DIPIR IRFD1Z1602.40.5DIPHarris IRFD1Z21003.20.4DIPHarris IRFD1Z3603.20.4DIPHarris IRFD2102001.50.61.3DIPIR IRFD2102001.50.61.3HEXDIPIR IRFD211(R)1501.50.6DIPHarrisIRFD213(R)1502.40.45DIPHarris IRFD21425020.571.3DIPIR IRFD21425020.571.3HEXDIPIR IRFD2202000.80.81DIPIRIRFD2202000.80.81.3HEXDIPIR IRFD221(R)1500.80.8DIPHarris IRFD222(R)2001.20.7DIPHarris IRFD223(R)1501.20.7DIPHarris IRFD2242501.10.761.3DIPIR IRFD2242501.10.761.3HEXDIPIR IRFD2Z020050.32DIPHarris IRFD2Z115050.32DIPHarris IRFD2Z22006.50.3DIPHarris IRFD2Z31506.50.3DIPHarris IRFD3104003.60.421.3DIPIR IRFD3104003.60.421.3HEXDIPIR IRFD311(R)3503.60.4DIPHarris IRFD312(R)40050.3DIPHarris IRFD313(R)35050.3DIPHarris IRFD3204001.80.61.3DIPIR IRFD3204001.80.61.3HEXDIPIRIRFD322(R)4002.50.4DIPHarrisIRFD323(R)3502.50.4DIPHarrisIRFD42050030.461.3DIPIRIRFD42050030.461.3HEXDIPIRIRFD6206004.40.321.3DIPIRIRFD9014-600.51.11.3DIP2SJ360IRIRFD9024-600.281.61.3DIP2SJ377IRIRFD9110-1001.20.71.3DIPIRIRFD9113-601.60.6DIPHarrisIRFD9120-1000.611.3DIPIRIRFD9123-600.80.8DIPHarrisIRFD9210-20030.41DIPIRIRFD9220-2001.50.561DIPIRIRFD9223-1502.40.45DIPHarrisIRFDC10LC600100.251.3DIPIRIRFDC206004.40.321.3HEXDIPIR标题:IRFI系列场效应管参数代换作者:日期:2009-02-14 20:47:25内容:IRFI系列POWER MOSFET 功率场效应管型号参数查询及代换带有"-"号的参数为P沟道场效应管,没注明的均为N沟道场效应管.型号Drain-to-Source Voltage漏极到源极电压Static Drain-SourceOn-State Resistance静态漏源通态电阻Continuous Drain Current漏极连续电流(TC=25℃)PD Total Power Dissipation 总功率耗散(TC=25℃）Package封装Toshiba Replacement 替换东芝型号Vender 供应商VDSSRDS(ON)IDPD(V)(ohm)欧姆(A)(W)IRFI1010G550.144350TO-220ISIRIRFI1010N550.0124447TO-220ISIRIRFI1310G1000.042150TO-220IS2SK2466IRIRFI1310N1000.0362245TO-220ISIRIRFI3205550.0085648TO-220IS2SK2985IRIRFI37101000.0252848TO-220ISIRIRFI4905-550.02-4163TO-220ISIRIRFI510A1000.45.633I2-PAK2SK2399SamsungIRFI510G1000.544.527TO-220IS2SK2399IRIRFI510G1000.544.527TO-220ISIRIRFI520A1000.29.245I2-PAK2SK2399SamsungIRFI520G1000.274.237TO-220IS2SK2399IRIRFI520N1000.27.227TO-220IS2SK2399IRIRFI5210-1000.06-2048TO-220ISIRIRFI530A1000.111455I2-PAK2SK2789SamsungIRFI530G1000.169.742TO-220IS2SK2391IRIRFI530N1000.111133TO-220IS2SK2391IRIRFI540A1000.05228107I2-PAK2SK2466Samsung IRFI540G1000.0771748TO-220IS2SK2391IR IRFI540N1000.0521842TO-220IS2SK2466IR IRFI550A1000.0440167I2-PAK2SK2466Samsung IRFI610A2001.53.338I2-PAK2SK2920Samsung IRFI614A25022.840I2-PAKSamsungIRFI614G25022.123TO-220IS2SK2840IRIRFI620A2000.8547I2-PAK2SK2920Samsung IRFI620G2000.84.130TO-220IS2SK2381IRIRFI624A2501.14.149I2-PAKSamsungIRFI624G2501.13.430TO-220IS2SK2840IRIRFI630A2000.4972I2-PAK2SK2401Samsung IRFI630G2000.45.935TO-220IS2SK2350IRIRFI634A2500.458.174I2-PAK2SK2598Samsung IRFI634G2500.455.635TO-220IS2SK2417IRIRFI640A2000.1818139I2-PAK2SK2401Samsung IRFI640G2000.189.840TO-220IS2SK2382IRIRFI644A2500.2814139I2-PAK2SK2598Samsung IRFI644G2500.287.940TO-220IS2SK2508IRIRFI710A4003.6236I2-PAK2SK2838Samsung IRFI720A4001.83.346I2-PAK2SK2838Samsung IRFI720G4001.82.630TO-220IS2SK2679IRIRFI730A40015.573I2-PAK2SK2838Samsung IRFI730G40013.735TO-220IS2SK2679IRIRFI734G4501.23.435TO-220IS2SK2543IRIRFI740A4000.5510134I2-PAK2SK2949Samsung IRFI740G4000.555.440TO-220IS2SK2952IR IRFI740GLC4000.55640TO-220IS2SK2952IR IRFI744G4500.634.940TO-220IS2SK2952IR IRFI820A50032.549I2-PAKSamsungIRFI820G50032.130TO-220IS2SK2862IRIRFI830A5001.54.573I2-PAK2SK2991Samsung IRFI830G5001.53.135TO-220IS2SK2662IRIRFI840A5000.858134I2-PAK2SK2776Samsung IRFI840G5000.854.640TO-220IS2SK2543IR IRFI840GLC5000.854.840TO-220IS2SK2543IR IRFI9520G-1000.65.237TO-220ISIRIRFI9530G-1000.37.742TO-220IS2SJ380IRIRFI9540G-1000.21148TO-220IS2SJ380IRIRFI9620G-2001.5330TO-220IS2SJ407IRIRFI9630G-2000.84.335TO-220IS2SJ407IRIRFI9634G-2501-4.135TO-220IS2SJ512IRIRFI9640G-2000.56.140TO-220IS2SJ513IRIRFI9Z14G-600.55.327TO-220IS2SJ438IRIRFI9Z24G-600.288.537TO-220IS2SJ438IR IRFI9Z24N-550.175-9.529TO-220IS2SJ438IR IRFI9Z34G-600.141242TO-220IS2SJ304IR IRFI9Z34N-550.1-1437TO-220ISIRIRFIBC20G6004.41.730TO-220IS2SK3067IR IRFIBC30G6002.22.535TO-220IS2SK2750IR IRFIBC40G6001.23.540TO-220IS2SK2545IR IRFIBC40GLC6001.2440TO-220IS2SK2545IR IRFIBE20G8006.51.430TO-220IS2SK2603IR IRFIBE30G80032.135TO-220IS2SK2603IR IRFIBF20G90081.230TO-220IS2SK2733IR IRFIBF30G9003.71.935TO-220IS2SK2700IR IRFIP044600.02843100TO-247IS2SK2233IR IRFIP054600.01464120TO-247IS2SK2313IR IRFIP1401000.07723100TO-247IS2SK2391IR IRFIP1501000.05531120TO-247IS2SK2466IR IRFIP2402000.181483TO-247IS2SK2382IR IRFIP2442500.281183TO-247IS2SK2508IR IRFIP2502000.0852296TO-247IS2SK2995IR IRFIP2542500.141796TO-247IS2SK2995IR IRFIP3404000.55883TO-247IS2SK2952IR IRFIP3504000.31196TO-247IS2SK2917IRIRFIP4405000.856.483TO-247IS2SK2600IRIRFIP4485000.67.489TO-247IS2SK2600IRIRFIP4505000.41096TO-247IS2SK2916IRIRFIP9140-1000.215100TO-247IS2SJ412IRIRFIP9240-2000.58.983TO-247IS2SJ513IRIRFIZ14A600.141030I2-PAK2SK2231SamsungIRFIZ14G600.2827TO-220IS2SK2231IRIRFIZ24A600.071744I2-PAK2SK2311SamsungIRFIZ24E600.0711429TO-220IS2SK2232IRIRFIZ24G600.11437TO-220IS2SK2232IRIRFIZ24N550.071326TO-220IS2SK2232IR经典三极管参数52008-12-15 11:57【CMOS管资料大全】晶体管型号Vds Id Pd 类型IRF120 100V 8A 40W NMOS场效应IRF121 60V 8A 40W NMOS场效应IRF122 100V 7A 40W NMOS场效应IRF123 60V 7A 40W NMOS场效应IRF130 100V 14A 75W NMOS场效应IRF131 60V 14A 75W NMOS场效应IRF132 100V 12A 75W NMOS场效应IRF133 60V 12A 75W NMOS场效应IRF140 100V 27A 125W NMOS场效应IRF141 60V 27A 125W NMOS场效应IRF142 100V 24A 125W NMOS场效应IRF143 60V 22A 125W NMOS场效应IRF150 100V 40A 150W NMOS场效应IRF151 60V 40A 150W NMOS场效应IRF152 100V 33A 150W NMOS场效应IRF153 60V 33A 150W NMOS场效应IRF220 200V 5A 40W NMOS场效应IRF221 150V 5A 40W NMOS场效应IRF222 200V 4A 40W NMOS场效应IRF223 150V 4A 40W NMOS场效应IRF230 200V 9A 75W NMOS场效应IRF231 150V 9A 75W NMOS场效应IRF232 200V 8A 75W NMOS场效应IRF233 150V 8A 75W NMOS场效应IRF240 200V 18A 125W NMOS场效应IRF241 150V 18A 125W NMOS场效应IRF242 200V 16A 125W NMOS场效应IRF243 150V 16A 125W NMOS场效应IRF250 200V 19A 150W NMOS场效应低导通电阻IRF251 150V 19A 150W NMOS场效应低导通电阻IRF252 200V 16A 150W NMOS场效应低导通电阻IRF253 150V 16A 150W NMOS场效应低导通电阻IRF330 400V 5.5A 75W NMOS效应IRF331 350V 5.5A 75W NMOS场效应IRF332 400V 4.5A 75W NMOS场效应IRF333 350V 4.5A 75W NMOS场效应标题:IRFS系列N沟道功率场效应管型号参数查询代换作者:日期:2009-02-14 20:15:47内容:N-CHANNELPOWER MOSFET N沟道功率场效应管型号参数查询及代换型号Drain-to-Source Voltage漏极到源极电压Static Drain-SourceOn-State Resistance静态漏源通态电阻Continuous Drain Current连续漏电流(TC=25℃)PD Total Power Dissipation 总功率耗散(TC=25℃）Package封装Toshiba Replacement代换东芝型号Note 注意Vender 供应商VDSSRDS(ON)IDPD(V)(ohm)欧姆(A)(W)IRFS140A1000.0522372TO-3PIS2SK2466BSamsung IRFS150A1000.0431100TO-3PIS2SK2466BSamsung IRFS1Z01002.40.823.6SOT-892SK2963AIRIRFS240A2000.1812.873TO-3PIS2SK2382BSamsung IRFS244A2500.2810.273TO-3PIS2SK2508BSamsung IRFS250A2000.08521.390TO-3PIS2SK2995ASamsung IRFS254A2500.141690TO-3PIS2SK2995ASamsung IRFS340A4000.55885TO-3PIS2SK2952BSamsung IRFS350A4000.311.592TO-3PIS2SK2917ASamsung IRFS440A5000.856.285TO-3PIS2SK2600ASamsung IRFS450A5000.49.696TO-3PIS2SK2916ASamsung IRFS510A1000.44.521TO-220IS2SK2399BSamsung IRFS520A1000.27.228TO-220IS2SK2399BSamsung IRFS530A1000.1110.732TO-220IS2SK2391ASamsung IRFS540A1000.0521739TO-220IS2SK2466ASamsung IRFS550A1000.042146TO-220IS2SK2466ASamsung IRFS610A2001.52.522TO-220IS2SK2381ASamsung IRFS614A25022.122TO-220IS2SK2840ASamsung IRFS620A2000.84.132TO-220IS2SK2381ASamsung IRFS624A2501.13.434TO-220IS2SK2840ASamsung IRFS630A2000.46.538TO-220IS2SK2350ASamsungIRFS634A2500.455.838TO-220IS2SK2417ASamsungIRFS640A2000.189.843TO-220ISYTAF630ASamsung IRFS644A2500.287.943TO-220IS2SK2508ASamsung IRFS650A2000.08515.850TO-220ISSamsungIRFS654A2500.141250TO-220ISSamsungIRFS710A4003.61.623TO-220IS2SK2862BSamsung IRFS720A4001.82.833TO-220IS2SK2679ASamsung IRFS730A40013.938TO-220IS2SK2679ASamsung IRFS740A4000.555.744TO-220IS2SK2952ASamsung IRFS750A4000.38.449TO-220ISSamsungIRFS820A50032.133TO-220IS2SK2862ASamsung IRFS830A5001.53.138TO-220IS2SK2662ASamsung IRFS840A5000.854.644TO-220IS2SK2662ASamsung IRFSZ14A600.14819TO-220IS2SK2231BSamsung IRFSZ24A600.071430TO-220IS2SK2232ASamsung IRFSZ34A600.042034TO-220IS2SK2385ASamsungIRFSZ44A600.0243045TO-220IS2SK2312ASamsung 常用功率场效应管速查表型号规格IRFP254 23A 250V 200WIRFP260 46A 200V 280WIRFP264 38A 250V 280WIRFP340 10A 400V 180WIRFP250 33A 200V 190WIRFP350 16A 400V 180WIRFP360 23A 400V 280WIRFP450 14A 500V 180WIRFP460 20A 500V 280WIRFP3710IRFu120IRFu9120IRFD110IRFD912050N06 50A 60V60N06 60A 60V70N06 70A 60V75N06 75A 60V75N75 75A 75V80N06 80A60VSSP3N90 3A 900V 25WSSP4N60 4A 600VSSP4N90 4A 900V 140WSSP5N90 5A 900V 150W6N60 6A 600V 125W7N90 7A 900V 150WIXFH12N90 12A 900V 300W IXFH12N100 12A 1000V 300W IXFH13N80 13A 800V 280W W20N50 20A 500V 180W IXFH20N60 20A 600V 300W MTW24N40 24A 400V 250W IXFH24N50 24A 500V 250W IXFH26N50 26A 500V 300W IXFH32N50 32A 500V 300W IXFH40N30 40A 300V 300W IRF510 5.6A 100V 20WIRF520 8A 100V 40WIRF530 14A 100V 79WIRF540 28A 100V 150WIRF620 5A 200V 40WIRF630 9A 200V 75WIRF834 8.1A 250V 75WIRF640 18A 200V 125WIRF644 14A 250V 125WIRF730 5.5A 400V 75WIRF740 10A 400V 75WIRF830 4.5A 500V 75WIRF840 8A 500V 125WIRF1010 75A 55V 150WIRF2807 71A 75V 150WIRF3205 98A 55V 150WIRF3710 46A 100V 150WIRF9530 12A 100V 88WIRF9540 18A 100V 150WIRF9610 1.8A 200V 20WIRF9620 3.5A 200V 40WIRF9630 6.5A 200V 75WIRF9640 11A 200V 125W IRFBC30 6.2A 600V 74W IRFBC40 6.2A 600V 125W IRFBE30 4.1A 800V 125W IRFBE40 5A 800V 125W IRFPC50 11A 600V 180W IRFPC60 16A 600V 280W IRFPG50IRFPF30 3.6A 900V 125W IRFPF40 47A 900V 150W IRFPF50IRFPE50IRFZ20 15A 50V 40WIRFZ40 51A 60V 150WIRFZ44 50A 60V 190WIRFZ46 33A 55V 45WIRFZ48 40A 55V 45WIRF40N10 40A 100V 100W IXFK48N50 48A 500V 220W IXFH50N20 50A 200V 300W IXFH58N20 58A 200V 300W IXFH74N20 74A 200V 300W IXFH75N10 75A 100V 300W IXFH80N10 80A 100V 300W IXFH80N20 80A 200V 300W IXFK100N10 100A 100V 450W IXFK170N10 170A 100V 450W K413 8A 140V 100WK534 5A 800V 100WK559 15A 450V 100WK560 15A 500V 100W型号规格K622 20A 150V 20WK623 20A 250V 120WK719 5A 900V 120WK724 15A 500V 100WK725 15A 500V 125WK727 5A 900V 125WK791 3A 850V 100W K792 3A 900V 100W K793 5A 850V 150W K794 5A 900V 125W K790 15A 500V 150W K822 22A 250V 90W K833 5A 900V 150W K850 40A 100V 125W K851 30A 200V 150W K899 18A 500V 125W K902 20A 250V 150W K940 0.8A 60V 0.9W K956 9A 800V 150W K962 8A 900V 150W K1010 6A 500V 80W K1016 15A 500V 125W K1020 30A 500V 125W K1081 7A 800V 125W K1082 6A 900V 125W K1117 6A 600V 45W K1118 6A 600V 45W K1119 4A 1000V 100W K1120 8A 1000V 150W K1217 8A 900V 100W K1271 5A 1400V 240W K1227 30A 250V 150W K1341 6A 900V 100W K1342 8A 900V 100W K1357 5A 900V 150W K1358 9A 900V 150W K1413 2A 1500V 3W K1414 6A 1500V 3.5W K1457 5A 900V 70W K1507 9A 600V 70W K1512 10A 900V 150W K1520 30A 500V 200W K1521 50A 450V 250W K1522 50A 450V 250W K1527 40A 500V 250W K1544 25A 500V 200W K1723 12A 600V 150W K1745 18A 600V 150W K1796 10A 900V 150WK1941 12A 600V 125WK2038 5A 800V 125WK2039 5A 900V 150WK2082 9A 900V 150WK2333 6A 700V 50WK2485 6A 900V 150WK2608 3A 900V 100WK2610 5A 900V 125WK2611 9A 900V 150WK2648 9A 800V 150WK2677 10A 900V 65WK2700 3A 900V 40WK2761 10A 600V 50WK2765 7A 800V 125WK2850 6A 900V 150WK2488 10A 900V 150WGT8Q101 8A 1200V 180W GT15J101 15A 600V 180W GT15Q101 15A 1200V 200W' GT25H101 25A 600V 200W GT25Q101 25A 1200V 200W G40N1500 40A 1500V 250W G20N60 20A 600V 250WG30N60 30A 600V 220WG30N120 30A 1200V 250W IRFP064N 110A 55V 200W IXGH17N100 17A 1000V 280W IXGH24N60 24A 600V 250W IXGH32N60 32A 600V 250W IRFP054N 81A 55V 170W IXFPG4BC100DIRGPC50UIRGPH50UIRGPH40UIRFP054 70A 60V 230W78455 代IRFP054IRFP064 70A 60V 300WIRFP150 40A 100V 200W标题:IRF系列场效应管参数代换作者:日期:2009-02-14 19:37:02内容:IRF系列POWER MOSFET 功率场效应管型号参数查询及代换带有"-"号的参数为P沟道场效应管,带有/的参数的为P沟道,N沟道双管封装在一起的场效应管,没注明的均为N沟道场效应管.型号Drain-to-Source Voltage漏极到源极电压Static Drain-SourceOn-State Resistance静态漏源通态电阻Continuous Drain Current漏极连续电流(TC=25℃)PD Total Power Dissipation 总功率耗散(TC=25℃）Package 封装Toshiba Replacement 替换东芝型号Vender 供应商VDSSRDS(ON)IDPD(V)(ohm)欧姆(A)(W)IRF4860-50190TO-220AB-IRIRF02460-1760TO-204AA-IRIRF03460-3090TO-204AE-IRIRF03560-2590TO-204AE-IRIRF04460-30150TO-204AE-IRIRF04560-30150TO-204AE-IRIRF05460-30180TO-204AA-IRIRF120100-8.040TO-3-IRIRF12160-8.040TO-3-IRIRF122100-7.040TO-3-IRIRF12360-7.040TO-3-IRIRF130100-1475TO-3-IRIRF13160-1475TO-3-IRIRF132100-1275TO-3-IRIRF13360-1275TO-3-IRIRF140100-27125TO-204AE-IR IRF14160-27125TO-204AE-IR IRF142100-24125TO-204AE-IR IRF14360-24125TO-204AE-IR IRF150100-40150TO-204AE-IR IRF15160-40150TO-204AE-IR IRF152100-33150TO-204AE-IR IRF15360-33150TO-204AE-IR IRF220200-5.040TO-3-IRIRF221150-5.040TO-3-IRIRF222200-4.04.0TO-3-IRIRF223150-4.040TO-3-IRIRF224250-3.840TO-204AA-IR IRF225250-3.340TO-204AA-IR IRF230200-9.075TO-3-IRIRF231150-9.075TO-3-IRIRF232200-8.075TO-3-IRIRF233150-8.075TO-3-IRIRF234250-8.175TO-204AA-IRIRF235250-6.575TO-204AA-IR IRF240200-18125TO-204AE-IR IRF241150-18125TO-204AE-IR IRF242200-16125TO-204AE-IR IRF243150-16125TO-204AE-IR IRF244250-14125TO-204AA-IR IRF245250-13125TO-204AA-IR IRF250200-30150TO-204AE-IR IRF251150-30150TO-204AE-IR IRF252200-25150TO-204AE-IR IRF253150-25150TO-204AE-IR IRF254250-22150TO-204AE-IR IRF255250-20150TO-204AE-IR IRF320400-3.040TO-3-IRIRF321350-3.040TO-3-IRIRF322400-2.540TO-3-IRIRF323350-2.540TO-3-IRIRF330400-5.575TO-3-IRIRF331350-5.575TO-3-IRIRF332400-4.575TO-3-IRIRF333350-4.575TO-3-IRIRF340400-10125TO-3-IRIRF341350-10125TO-3-IRIRF342400-8.0125TO-3-IRIRF343350-8.0125TO-3-IRIRF350400-15150TO-3-IRIRF351350-15150TO-3-IRIRF352400-13150TO-3-IRIRF353350-13150TO-3-IRIRF360400-25300TO-204AE-IR IRF362400-22300TO-204AE-IR IRF420500-2.550TO-3-IRIRF421450-2.550TO-3-IRIRF422500-2.050TO-3-IRIRF423450-2.050TO-3-IRIRF430500-4.575TO-3-IRIRF431450-4.575TO-3-IRIRF432500-4.075TO-3-IRIRF433450-4.075TO-3-IRIRF440500-8.0125TO-3-IRIRF441450-8.0125TO-3-IRIRF442500-7.0125TO-3-IRIRF443450-7.0125TO-3-IRIRF448500-9.6130TO-204AA-IRIRF449500-8.6130TO-204AA-IRIRF450500-13150TO-3-IRIRF451450-13150TO-3-IRIRF452500-12150TO-3-IRIRF453450-12150TO-3-IRIRF460500-21300TO-204AE-IRIRF462500-19300TO-204AE-IRIRF1010550.01475150TO-220AB2SK2312IR IRF1010E600.01281170TO-220AB2SK2985IR IRF1010EL600.01283170TO-2622SK2986IR IRF1010ES600.01283170D2PAK2SK2986IR IRF1010N550.01272130TO-220AB-IRIRF1010NL550.01184170TO-262-IRIRF1010NS550.011843.8D2PAK-IRIRF1010S550.01475150D2PAK2SK2376IR IRF13101000.0443150TO-220AB2SK2466IR IRF1310N1000.03636120TO-220AB-IRIRF1310NS1000.03636120D2PAK-IRIRF1310S1000.0443150D2PAK2SK2466IR IRF2807750.01371150TO-220AB-IRIRF2807L750.01371150TO-262-IRIRF2807S750.01371150D2PAK-IRIRF3205L550.008110200TO-2622SK2986IRIRF3205S550.008110200D2PAK2SK2986IRIRF33151500.0822194TO-220AB-IRIRF3315L1500.0822194TO-262-IRIRF3315S1500.0822194D2PAK-IRIRF34151500.04237150TO-220AB-IRIRF3415S1500.04237150D2PAK-IRIRF37101000.02846150TO-220AB-IRIRF3710S1000.02846150D2PAK-IRIRF4905-550.0264150TO-220AB-IRIRF4905L-550.02-74200TO-262-IRIRF4905S-550.02-743.8D2PAK-IR功率场效应管替带-替代IRF系列POWER MOSFET 功率场效应管型号参数查询及代换带有"-"号的参数为P沟道场效应管,带有/的参数的为P沟道,N沟道双管封装在一起的场效应管,没注明的均为N沟道场效应管.型号Drain-to-Source Voltage漏极到源极电压Static Drain-SourceOn-State Resistance静态漏源通态电阻Continuous Drain Current漏极连续电流(TC=25℃)PD Total Power Dissipation 总功率耗散(TC=25℃）Package封装Toshiba Replacement 替换东芝型号Vender 供应商VDSSRDS(ON)IDPD(V)(ohm)欧姆(A)(W)IRF510A1000.45.633TO-220AB2SK2399Samsung IRF510S1000.545.643D2PAK2SK2399IRIRF511(R)800.545.6-TO-220AB2SK2399Harris IRF512(R)1000.744.9-TO-220AB2SK2399Harris IRF513(R)800.744.9-TO-220AB2SK2399Harris IRF5201000.279.260TO-220AB2SK2399IRIRF5201000.2710-TO-220AB2SK2399STIRF520A1000.29.245TO-220AB2SK2399Samsung IRF520FI1000.277-TO-220FP2SK2399STIRF520N1000.29.547TO-220AB2SK2399IRIRF520NS1000.29.547D2PAK2SK2399IRIRF520S1000.279.260D2PAK2SK2399IRIRF521(R)800.279.2-TO-220AB2SK2399Harris IRF5210-1000.06-35150TO-220AB-IRIRF5210S-1000.06-35150D2PAK-IRIRF522(R)1000.368-TO-220AB-HarrisIRF523(R)800.368-TO-220AB2SK2399Harris IRF5301000.161488TO-220AB2SK2314IRIRF5301000.1616-TO-220AB2SK2314STIRF5305-550.06-31110TO-220AB2SJ349IRIRF5305L-550.06-31110TO-2622SJ401IRIRF530A1000.111455TO-220AB2SK2314Samsung IRF530FI1000.1610-TO-220FP2SK2391STIRF530N1000.111560TO-220AB2SK2314IRIRF530NS1000.111563D2PAK2SK2789IRIRF530S1000.161488D2PAK2SK2789IRIRF531(R)800.1614-TO-220AB2SK2314HarrisIRF532(R)1000.2312-TO-220AB2SK2399HarrisIRF533(R)800.2312-TO-220AB2SK2314HarrisIRF5401000.07728150TO-220AB2SK2314IRIRF5401000.07730-TO-220AB2SK2314STIRF540A1000.05228107TO-220AB2SK2466Samsung IRF540FI1000.07716-TO-220FP2SK2391STIRF540N1000.0522794TO-220AB2SK2466IRIRF540NS1000.05227110D2PAK2SK2466IRIRF540S1000.07728150D2PAK2SK2789IRIRF541(R)800.07728-TO-220AB2SK2314HarrisIRF542(R)1000.125-TO-220AB2SK2314HarrisIRF543(R)800.125-TO-220AB2SK2314HarrisIRF550A1000.0440167TO-220AB2SK2466Samsung IRF6102001.53.336TO-220AB2SK2381IRIRF610A2001.53.338TO-220AB2SK2381SamsungIRF611(R)1501.53.3-TO-220AB2SK2381Harris IRF612(R)2002.42.6-TO-220AB2SK2381Harris IRF613(R)1502.42.6-TO-220AB2SK2381Harris IRF61425022.736TO-220AB2SK2840IRIRF614A25022.840TO-220AB2SK2840Samsung IRF614S25022.736D2PAK-IRIRF6202000.85.250TO-220AB2SK2381IRIRF6202000.87-TO-220AB2SK2381STIRF620A2000.8547TO-220AB2SK2381Samsung IRF620FI2000.84.3-TO-220FP2SK2381STIRF620S2000.85.250D2PAK2SK2920IRIRF621(R)1500.85-TO-220AB2SK2381Harris IRF6215-1500.29-1183TO-220AB-IRIRF622(R)2001.24-TO-220AB2SK2381Harris IRF623(R)1501.24-TO-220AB2SK2381Harris IRF6242501.14.450TO-220AB2SK2840IRIRF624A2501.14.149TO-220AB2SK2840Samsung IRF624S2501.14.450D2PAK-IRIRF6252501.13.8-TO-220AB2SK2840HarrisIRF6262750.686.5-TO-220AB-HarrisIRF6272751.13.8-TO-220AB-HarrisIRF6302000.4974TO-220ABYTA630IRIRF630A2000.4972TO-220ABYTA630Samsung IRF630S2000.4974D2PAK2SK2401IRIRF631(R)1500.49-TO-220AB2SK2350HarrisIRF632(R)2000.49-TO-220ABYTA630HarrisIRF633(R)1500.68-TO-220AB2SK2350HarrisIRF6342500.458.174TO-220AB2SK2914IRIRF634A2500.458.174TO-220AB2SK2914Samsung IRF634S2500.458.174D2PAK2SK2598IRIRF6352500.458.1-TO-220AB2SK2914HarrisIRF6362750.3413-TO-220AB-HarrisIRF6372750.458.1-TO-220AB-HarrisIRF6402000.1818125TO-220ABYTA640IRIRF640A2000.1818139TO-220ABYTA640Samsung IRF640S2000.1818125D2PAK2SK2401IRIRF641(R)1500.1818-TO-220AB2SK2382Harris IRF642(R)2000.1818-TO-220AB2SK2382Harris IRF643(R)1500.2216-TO-220AB2SK2382Harris IRF6442500.2814125TO-220AB2SK2508IRIRF644A2500.2814139TO-220AB2SK2508Samsung IRF644S2500.2814125D2PAK2SK2598IRIRF6452500.2814-TO-220AB2SK2508HarrisIRF6462750.2815-TO-220AB-HarrisIRF6472750.2814-TO-220AB-HarrisIRF650A2000.08528156TO-220AB-SamsungIRF654A2500.1421156TO-220AB-Samsung功率场效应管替带-替代IRF系列POWER MOSFET 功率场效应管型号参数查询及代换带有"-"号的参数为P沟道场效应管,带有/的参数的为P沟道,N沟道双管封装在一起的场效应管,没注明的均为N沟道场效应管.型号Drain-to-Source Voltage漏极到源极电压Static Drain-SourceOn-State Resistance静态漏源通态电阻Continuous Drain Current漏极连续电流(TC=25℃)PD Total Power Dissipation 总功率耗散(TC=25℃）Package封装Toshiba Replacement 替换东芝型号Vender 供应商VDSSRDS(ON)IDPD(V)(ohm)欧姆(A)(W)IRF7104003.6236TO-220AB2SK2862IRIRF7101200.13.52SOP-8(Dual)TPC8202IRIRF7102500.322SOP-8(Dual)TPC8205IRIRF7103500.1332SOP-8(Dual)TPC8205IRIRF7104-200.252.32SOP-8(Dual)TPC8302IRIRF7105250.1/0.253.5/-2.32SOP-8(P&N)-IRIRF7106200.125/0.253/-2.52SOP-8(P&N)-IRIRF7107200.125/0.163/-2.82SOP-8(P&N)-IRIRF710A4003.6236TO-220AB2SK2679SamsungIRF710S4003.6236D2PAK-IRIRF711(R)3503.62-TO-220AB2SK2862HarrisIRF712(R)40051.7-TO-220AB2SK2862HarrisIRF713(R)35051.7-TO-220AB2SK2862HarrisIRF7204001.83.350TO-220AB2SK2679IRIRF7201300.0372.5SOP-8(Single)TPC8001IRIRF7202-200.252.52.5SOP-8(Single)TPC8102IR IRF7203-200.14.32.5SOP-8(Single)TPC8102IR IRF7204-200.065.32.5SOP-8(Single)TPC8102IR IRF7205-300.07-4.62.5SOP-8(Single)TPC8102IR IRF7205-300.075.32.5SOP-8(Single)TPC8104-HIR IRF720A4001.83.346TO-220AB2SK2679Samsung IRF720S4001.83.350D2PAK2SK2838IRIRF721(R)3501.83.3-TO-220AB2SK2679Harris IRF722(R)4002.52.8-TO-220AB2SK2862Harris IRF723(R)3502.52.8-TO-220AB2SK2862Harris IRF73040015.574TO-220AB2SK2679IRIRF7301200.054.31.4SOP-8(Dual)TPC8202IR IRF7303300.0541.4SOP-8(Dual)TPC8201IRIRF7304-200.093.61.4SOP-8(Dual)TPC8302IR IRF7306-300.131.4SOP-8(Dual)TPC8301IRIRF730720/-200.05/0.094.3/3.61.4SOP-8(P&N)-IRIRF730930/-300.05/0.14.0/3.01.4SOP-8(P&N)TPC8401IR IRF730A40015.573TO-220AB2SK2679SamsungIRF730S40015.574D2PAK2SK2838IRIRF731(R)35015.5-TO-220AB2SK2679HarrisIRF7311200.0296.62SOP-8(Dual)TPC8204IRIRF7313300.0296.52SOP-8(Dual)TPC8203IRIRF7314-200.058-5.32SOP-8(Dual)TPC8302IRIRF7316-300.058-4.92SOP-8(Dual)TPC8303IRIRF731720/-200.029/0.0586.6/-5.32SOP-8(P&N)-IRIRF731930/-300.029/0.0586.5/-4.92SOP-8(P&N)-IRIRF732(R)4001.54.5-TO-220AB2SK2679HarrisIRF733(R)3501.54.5-TO-220AB2SK2679HarrisIRF7333300.1/0.053.5/4.92SOP-8(Dual)-IRIRF7344501.24.974TO-220AB2SK2542IRIRF734355/-550.06/0.1054.7/3.4-SOP-8(P&N)-IRIRF737LC3000.756.174TO-220AB-IRIRF738930/-300.029/0.0587.3/-5.3-SOP-8(P&N)TPC8401IR IRF7404000.5510125TO-220AB2SK2841IRIRF7401200.0228.72.5SOP-8(Single)TPC8001IRIRF7403300.0228.52.5SOP-8(Single)TPC8001IRIRF7404-200.04-6.72.5SOP-8(Single)TPC8102IRIRF7406-300.0454.71.6SOP-8(Single)TPC8105-HIRIRF740A4000.5510134TO-220AB2SK2841Samsung IRF740LC4000.5510125TO-220AB2SK2841IRIRF740S4000.5510125D2PAK2SK2949IRIRF741(R)3500.5510-TO-220AB2SK2841HarrisIRF7413300.011132.5SOP-8(Single)TPC8003IRIRF7413A300.0135122.5SOP-8(Single)TPC8005-HIR IRF7416-300.028.81SOP-8(Single)TPC8106-HIR IRF742(R)4000.88-TO-220AB2SK2841HarrisIRF7421D1300.0356.4-SOP-8(N&SBD)-IRIRF7422D2-200.09-4.6-SOP-8(P&SBD)-IRIRF743(R)3500.88-TO-220AB2SK2542HarrisIRF7444500.638.8125TO-220AB2SK2542IRIRF7501200.1351.70.63Micro-8-IRIRF7503300.1351.70.63Micro-8-IRIRF7504-200.271.20.63Micro-8SSM8J01FUIRIRF7506-300.271.20.63Micro-8-IRIRF750720/-200.135/0.271.7/1.30.63Micro-8-IRIRF750930/-300.135/0.271.7/1.20.63Micro-8-IRIRF750A4000.315156TO-220AB-SamsungIRF7601200.0353.80.78Micro-8-IRIRF7603300.0353.70.78Micro-8-IRIRF7604-200.092.40.78Micro-8-IRIRF7606-300.092.40.78Micro-8-IRIRF7805300.01113-SOP-8(Single)TPC8007-HIR IRF7807300.0258.3-SOP-8(Single)TPC8001IR IRF82050032.550TO-220AB2SK2862IRIRF820A50032.549TO-220AB2SK2661Samsung IRF820S50032.550D2PAK-IRIRF821(R)45032.5-TO-220AB2SK2862Harris IRF82250042.875TO-220AB2SK2862STIRF822(R)50042.2-TO-220AB2SK2862Harris IRF822FI50041.935TO-220IS2SK2862STIRF823(R)45042.2-TO-220AB2SK2862Harris IRF8305001.54.574TO-220AB2SK2661IRIRF830A5001.54.573TO-220AB2SK2661Samsung IRF830S5001.54.574D2PAK2SK2991IRIRF8314501.54.5100TO-220AB2SK2661STIRF831(R)4501.54.5-TO-220AB2SK2661Harris IRF831FI4501.5335TO-220IS2SK2662STIRF832(R)50024-TO-220AB2SK2661HarrisIRF833(R)45024-TO-220AB2SK2661HarrisIRF8405000.858125TO-220AB2SK2542IRIRF840A5000.858134TO-220ABYTA840Samsung IRF840LC5000.858125TO-220AB2SK2542IRIRF840S5000.858125D2PAK2SK2776IRIRF8414500.858125TO-220AB2SK2542STIRF841(R)4500.858-TO-220AB2SK2542HarrisIRF841FI4500.854.540TO-220IS2SK2543STIRF842(R)5001.17-TO-220AB2SK2542HarrisIRF843(R)4501.17-TO-220AB2SK2542HarrisIRF9410300.0372.5SOP-8(Single)TPC8001IRIRF9510-1001.2443TO-220AB-IRIRF9510S-1001.2443D2PAK-IRIRF9511-601.23-TO-220AB2SJ438HarrisIRF9512-1001.23-TO-220AB-HarrisIRF9513-601.92.5-TO-220AB2SJ438HarrisIRF9520-1000.66.860TO-220AB-IRIRF9520NL-1000.48-6.747TO-262-IRIRF9520NS-1000.48-6.747D2PAK-IRIRF9520S-1000.66.860D2PAK-IR功率场效应管替带-替代IRF系列POWER MOSFET 功率场效应管型号参数查询及代换带有"-"号的参数为P沟道场效应管,带有/的参数的为P沟道,N沟道双管封装在一起的场效应管,没注明的均为N沟道场效应管.型号Drain-to-Source Voltage漏极到源极电压Static Drain-SourceOn-State Resistance静态漏源通态电阻Continuous Drain Current漏极连续电流(TC=25℃)PD Total Power Dissipation 总功率耗散(TC=25℃）Package 封装Toshiba Replacement 替换东芝型号Vender 供应商VDSSRDS(ON)IDPD(V)(ohm)欧姆(A)(W)IRF9521-600.66-TO-220AB2SJ438HarrisIRF9522-1000.85-TO-220AB-HarrisIRF9523-600.85-TO-220AB2SJ438HarrisIRF9530-1000.31288TO-220AB2SJ380IRIRF9530N-1000.2-1375TO-220AB2SJ380IRIRF9530NL-1000.2-1475TO-2622SJ380IRIRF9530NS-1000.2-1475D2PAK-IRIRF9530S-1000.31288D2PAK2SJ412IRIRF9531-600.312-TO-220AB2SJ304HarrisIRF9532-1000.410-TO-220AB2SJ380HarrisIRF9533-600.410-TO-220AB2SJ304HarrisIRF9540-1000.219150TO-220AB2SJ380IRIRF9540N-1000.117-1994TO-220AB2SJ464IRIRF9540NS-1000.117-1994D2PAK-IRIRF9540S-1000.219150D2PAK2SJ412IRIRF9541-600.219-TO-220AB2SJ349HarrisIRF9542-1000.315-TO-220AB2SJ380HarrisIRF9543-600.315-TO-220AB2SJ304HarrisIRF9610-20031.820TO-220AB2SJ407IR。
IRFR220资料
DRAIN (FLANGE)
DRAIN
SOURCE
4-389
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
or 407-727-9207 | Copyright © Intersil Corporation 1999
D
-
Source Lead, 6.0mm
LD
(0.25in) From Package to
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE
DRAIN (FLANGE)
JEDEC TO-252AA
GATE
-
tr
VGS = 10V
-
MOSFET Switching Times are Essentially Indepen-
td(OFF) dent of Operating Temperature
-
tf
-
Qg(TOT) VGS = 10V, ID = 4.6A, VDS = 0.8 x Rated BVDSS, -
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
电子元器件zvnl120a中文资料_数据手册_IC数据表
ZVN2535A
TYPICAL CHARACTERISTICS
800
VGS=
10V
700
6V
600
500
400
4V
300
200 3V
100
0 0 10 20 30 40 50 60 70 80 90 100
VDS - Drain Source Voltage (Volts)
Output Characteristics
Gate-Body Leakage
Zero Gate Voltage Drain Current
IGSS IDSS
20
nA VGS=± 20V, VDS=0V
10
µA VDS=350V, VGS=0
400 µA VDS=280V, VGS=0V,
T=125°C(2)
On-State Drain Current(1)
Input Capacitance (2)
Common Source Output Capacitance (2)
gfs-Transconductance (mS)
250 200 150 100
50
0
0
100
200
300
400
500
ID- Drain Current (mA)
Transconductance v drain current
3-373
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94 FEATURES * 350 Volt VDS
RDS(on)=35Ω
ZVN2535A
APT15DQ120KG 1200V 15A 超快软恢复直流恢复矩阵体芯片数据手册说明书
Product OverviewThe APT15DQ120KG is a1200V,15A Ultrafast Soft Recovery Rectifier Si Diode in a TO-220package.FeaturesThe following are key features of the APT15DQ120KG device:•Ultrafast recovery times•Soft recovery characteristics•Low forward voltage•Low leakage current•Avalanche-energy rated•RoHS compliant•AEC-Q101qualifiedBenefitsThe following are benefits of the APT15DQ120KG device:•High switching frequency•Low switching losses•Low noise(EMI)switching•Higher reliability systems•Increased system power densityApplicationsThe APT15DQ120KG device is designed for the following applications:•Power factor correction(PFC)•Anti-parallel diode◦Switch-mode power supply◦Inverters/converters◦Motor controllers•Freewheeling diode◦Switch-mode power supply◦Inverters/converters•Snubber/clamp diodeThis section shows the specifications of the APT15DQ120KG device.Absolute Maximum RatingsThe following table shows the absolute maximum ratings of the APT15DQ120KG device.T C=25°C,unless otherwise specified.Table1•Absolute Maximum RatingsSymbolRatingParameterUnit V R1200V Maximum DC reverse voltageV RRMMaximum peak repetitive reverse voltageMaximum working peak reverse voltageV RWMI F(AV)15Maximum average forward current(T C=127°C,duty cycle=0.5)AI FSMNon-repetitive forward surge current(T J=45°C,8.3ms)110E AVLAvalanche-energy(1A,40mH)mJ20The following table shows the thermal and mechanical characteristics of the APT15DQ120KG device. Table2•Thermal and Mechanical CharacteristicsUnitMaxSymbolCharacteristicTypMinRθJCJunction-to-case thermal resistance1.18°C/WT J,T STGOperating and storage temperature range−55°C175T L300Lead temperature for10secondsWtPackage weight0.07oz1.9glbf•m Mounting torque,6-32or M3screw101.1N•mElectrical PerformanceThe following table shows the static characteristics of the APT15DQ120KG device.T J =25°C,unless otherwise specified.Table 3•Static CharacteristicsUnit Max Typ MinTest Conditions Characteristic Symbol V3.32.8I F =15A Forward voltageV F3.4I F =30A2.5I F =15A,T J =125°CµA100V R =1200VMaximum reverse leakage currentI RM500V R =1200V,T J =125°CpF 17V R =200VJunction capacitanceC JThe following table shows the dynamic characteristics of the APT15DQ120KG device.Table 4•Dynamic CharacteristicsUnit MaxTyp MinTest ConditionsCharacteristic Symbol ns21I F =1A;di F /dt =–100A/µs V R =30VReverse recovery timet rrns240I F =15A;di F /dt =–200A/µs V R =800VReverse recovery time t rr nC 260Reverse recovery chargeQ rr A 3Maximum reverse recovery current I RRM ns290I F =15A;di F /dt =–200A/µs V R =800V;T J =125°CReverse recovery time t rr nC 960Reverse recovery chargeQ rr A 6Maximum reverse recovery current I RRM ns130I F =15A;di F /dt =–1000A/µs V R =800V;T J =125°CReverse recovery time t rr nC 1340Reverse recovery chargeQ rr A19Maximum reverse recovery currentI RRMTypical Performance CurvesThis section shows the typical performance curves of the APT15DQ120KG device.Figure 1•Maximum Transient Thermal ImpedanceFigure 3•Reverse Recovery Time vs.Current Rate of ChangeFigure 2•Forward Current vs.Forward VoltageFigure 5 • Reverse Recovery Current vs. Current Rate of ChangeFigure 4 • Reverse Recovery Charge vs. Current Rate of ChangeFigure 7•Maximum Average Forward Current vs.Case TemperatureFigure 6 • Dynamic Parameters vs. Junction Temperature Figure 8•Junction Capacitance vs.Reverse VoltageThe following figure illustrates the diode test circuit of the APT15DQ120KG device.Figure9•Diode Test CircuitThe following figure illustrates the diode reverse recovery waveform and definitions of the APT15DQ120KGdevice.Figure10•Diode Reverse Recovery Waveform and Definitions1.I F—Forward conduction current.2.di F/dt—Rate of diode current change through zero crossing.3.I RRM—Maximum reverse recovery current.4.t rr—Reverse recovery time,measured from zero crossing where diode current goes from positive tonegative,to the point at which the straight line through I RRM and0.25•I RRM passes through zero.5.Q rr—Area under the curve defined by I RRM and t rr.This section shows the package specification of the APT15DQ120KG device. Package Outline DrawingThe following figure illustrates the TO-220package outline of the APT15DQ120KG device.Figure11•Package Outline DrawingThe following table shows the TO-220dimensions and should be used in conjunction with the package outline drawing.Table5•TO-220DimensionsMINSYMBOLMINMAXMAX[mm][mm][INCH][INCH]A4.320.1804.570.170B1.141.400.0550.0452.50C2.740.1080.098D0.360.0210.0140.53E2.650.1203.050.104F3.600.1563.960.14214.50G15.600.5710.614H2.390.1443.650.094I6.006.800.2680.2368.40J9.000.3540.33113.00K14.000.5510.512L1.231.390.0480.055M0.690.880.0350.027N10.0010.360.4080.394O7.570.3117.900.298P12.200.48013.100.516Q2.54BSC0.100BSCTERMINAL1CATHODEANODETERMINAL2CATHODETERMINAL3Microsemi's product warranty is set forth in Microsemi's Sales Order Terms and rmation contained in this publication is provided for the sole purpose of designing with and using Microsemi rmation regarding device applications and the like is provided only for your convenience and may be superseded by updates.Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi.It is your responsibility to ensure that your application meets with your specifications.THIS INFORMATION IS PROVIDED "AS IS."MICROSEMI MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,WRITTEN OR ORAL,STATUTORY OR OTHERWISE,RELATED TO THE INFORMATION,INCLUDING BUT NOT LIMITED TO ITS CONDITION,QUALITY ,PERFORMANCE,NON-INFRINGEMENT,MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE.IN NO EVENT WILL MICROSEMI BE LIABLE FOR ANY INDIRECT,SPECIAL,PUNITIVE,INCIDENTAL OR CONSEQUENTIAL LOSS,DAMAGE,COST OR EXPENSE WHATSOEVER RELATED TO THIS INFORMATION OR ITS USE,HOWEVER CAUSED,EVEN IF MICROSEMI HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE.TO THE FULLEST EXTENT ALLOWED BY LAW,MICROSEMI’S TOTAL LIABILITY ON ALL CLAIMS IN RELATED TO THIS INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES,IF ANY ,YOU PAID DIRECTLY TO MICROSEMI FOR THIS e of Microsemi devices in life support,mission-critical equipment or applications,and/or safety applications is entirely at the buyer’s risk,and the buyer agrees to defend and indemnify Microsemi from any and all damages,claims,suits,or expenses resulting from such use.No licenses are conveyed,implicitly or otherwise,under any Microsemi intellectual property rights unless otherwisestated.Microsemi2355W.Chandler Blvd.Chandler,AZ 85224USAWithin the USA:+1(480)792-7200Fax:+1(480)792-7277 ©2020Microsemi and its corporate affiliates.All rights reserved.Microsemi and the Microsemi logo are trademarks of Microsemi Corporation and its corporate affiliates.All other trademarks and service marks are the property of their respective owners.Microsemi Corporation,a subsidiary of Microchip Technology Inc.(Nasdaq:MCHP),and its corporate affiliates are leading providers of smart,connected and secure embedded control solutions.Their easy-to-use development tools and comprehensive product portfolio enable customers to create optimal designs which reduce risk while lowering total system cost and time to market.These solutions serve more than 120,000customers across the industrial,automotive,consumer,aerospace and defense,communications and computing markets.Headquartered in Chandler,Arizona,the company offers outstanding technical support along with dependable delivery and quality.Learn more at .053-4222|April 2020|ReleasedLegal。
世界各国和地区英文简写
世界各国和地区英文简写世界各国和地区英文简写序号缩写中文英文1 AE 阿联酋 United Arab Emirates2 AF 阿富汗 Afghanistan3 AL 阿尔巴尼亚 Albania4 AO 安哥拉 Angola5 AR 阿根廷 Argentina6 AT 奥地利 Austria7 AU 澳大利亚 Australia8 AZ 亚塞拜然 Azerbaijan9 BD 孟加拉 Bangladesh10 BE 比利时 Belgium11 BG 保加利亚 Bulgaria12 BH 巴林 Bahrain13 BI 蒲隆地 Burundi14 BJ 贝南 Benin15 BM 百慕大 Bermuda16 BN 汶莱 Brunei17 BO 玻利维亚 Bolivia18 BR 巴西 Brazil19 BS 巴哈马 Bahamas20 BT 不丹 Bhutan21 BW 波札那 Botswana22 CA 加拿大 Canada23 CF 中非共和国 Central Africa24 CG 刚果 Congo25 CH 瑞士 Switzerland26 CK 库克群岛 Cook Is.27 CL 智利 Chile28 CM 喀麦隆 Cameroon29 CN 中国 China30 CO 哥伦比亚 Colombia31 CR 哥斯大黎加 Costa Rica32 CU 古巴 Cuba33 CV 维德角群岛 Cape Verde Is.34 CY 塞普勒斯 Cyprus35 CZ 捷克共和国 Czech36 DE 德国 Germany37 DK 丹麦 Denmark38 DZ 阿尔及利亚 Algeria39 EC 厄瓜多 Ecuador40 EE 爱沙尼亚 Estonia41 EG 埃及 Egypt42 ES 西班牙 Spain43 ET 衣索比亚 Ethiopia44 FI 芬兰 Finland45 FJ 斐济 Fiji46 FR 法国 France47 GA 加彭 Gabon48 GB 英国 Great Britain49 GD 格瑞那达 Grenada50 GH 迦纳 Ghana51 GM 甘比亚 Gambia52 GN 几内亚 Guinea-Bissau53 GQ 赤道几内亚 Equatorial Guinea54 GR 希腊 Greece55 GT 瓜地马拉 Guatemala56 GU 关岛 Guam57 GY 盖亚那 Guyana58 HK 香港 Hong kong59 HN 宏都拉斯 Honduras60 HR 克罗埃西亚 Croatia61 HT 海地 Haiti62 HU 匈牙利 Hungary63 ID 印度尼西亚 Indonesia64 IE 爱尔兰 Ireland65 IL 以色列 Israel66 IN 印度 India67 IQ 伊拉克 Iraq68 IR 伊朗 Iran69 IS 冰岛 Iceland70 IT 义大利 Italy71 JM 牙买加 Jamaica72 JO 约旦 Jordan73 JP 日本 Japan74 KE 肯亚 Kenya75 KH 柬埔寨 Cambodia76 KP 韩国 R.O.Korea77 KR 北朝鲜 D.P.R.Korea78 KW 科威特 Kuwait79 KZ 哈萨克 Kazakhstan80 LA 寮国 Laos81 LB 黎巴嫩 Lebanon82 LT 立陶宛 Lithuania83 LU 卢森堡 Luxembourg84 LV 拉托维亚 Latvia85 LY 利比亚 Libya86 MA 摩洛哥 Moroo87 MC 摩纳哥 Monaco88 MD 摩尔多瓦 Moldova89 MG 马达加斯加 Madagascar90 ML 马里 Mali91 MN 蒙古 Mongolia92 MO 澳门 Macao93 MR 茅利塔尼亚 Mauritania94 MT 马耳他 Malta95 MU 模里西斯 Mauritius96 MV 马尔地夫 Maldives97 MX 墨西哥 Mexico98 MY 马来西亚 Malaysia99 MZ 莫三比克 Mozambique100 NA 奈米比亚 Namibia101 NE 尼日 Niger102 NG 奈及利亚 Nigeria103 NI 尼加拉瓜 Nicaragua104 NL 荷兰 Netherlands105 NO 挪威 Norway106 NP 尼泊尔 Nepal107 NZ 纽西兰 New Zealand108 OM 阿曼 Oman109 PA 巴拿马 Panama110 PE 祕鲁 Peru111 PG 巴布亚纽几内亚 Papua New Guinea 112 PH 菲律宾 Philippines113 PK 巴基斯坦 Pakistan114 PL 波兰 Poland115 PT 葡萄牙 Portugal116 PY 巴拉圭 Paraguay117 QA 卡达 Qatar118 RO 罗马尼亚 Romania119 RU 俄罗斯 Russia120 RW 卢安达 Rwanda121 SA 沙乌地阿拉伯 Saudi Arabia 122 SD 苏丹 Sudan123 SE 瑞典 Sweden124 SG 新加坡 Singapore125 SK 斯洛伐克 Slovakia126 SM 圣马利诺 San Marino 127 SN 塞内加尔 Senegal128 SO 索马利亚 Somalia129 SY 叙利亚 Syria130 TH 泰国 Thailand131 TJ 塔吉克 Tadzhikistan132 TM 土库曼 Turkmenistan 133 TN 突尼西亚 Tunisia134 TO 汤加 Tonga135 TW 台湾 Taiwan136 TZ 坦尚尼亚 Tanzania137 UA 乌克兰 Ukraine138 UG 乌干达 Uganda139 UK 英国 United Kingdom 140 US 美国 United States141 UY 乌拉圭 Uruguay142 UZ 乌兹别克 Uzbekistan143 VA 梵蒂冈 Vatican City144 VE 委内瑞拉 Venezuela145 VN 越南 Viet Nam146 YE 叶门 Yemen147 YU 南斯拉夫 Yugoslavia148 ZA 南非 South Africa149 ZM 尚比亚 Zambia150 ZR 扎伊尔 Zaire151 ZW 辛巴威 Zimbabwe世界各国英文简称阿尔巴尼亚Albania Lek ALL阿尔及利亚第纳尔 DZD安道尔法郎 FRF亚美尼亚 AMD安第列斯群岛盾 ANG安哥拉 AON阿根廷比索 ARP奥地利先令 ATS澳大利亚元 AUD安圭拉东加勒比海元 XCD阿鲁巴岛弗罗林 AWF安地卡及巴布达岛东加勒比海元 XCD亚塞拜然 AZM波斯尼亚和黑塞哥维那 BAK巴贝多元 BBD比利时法郎 BEF保加利亚列弗 BGL蒲隆地法郎 BIF巴哈马群岛元 BSD汶莱元 BND玻利维亚 BOB巴西 BRL不丹卢比 BTR波札那 BWP宏都拉斯元 BZD 加拿大元 CAD贝南法郎 XAF刚果法郎 CDF瑞士法郎 CHF智利比索 CLP中国人民币 CNY 哥伦比亚比索 COP 哥斯大黎加 CRC 捷克克郎 CZK古巴比索 CUP维德角 CVE塞普路斯镑 CYP 英镑 GBP德国马克 DEM丹麦克郎 DKK多美尼加比索 DOP 布吉纳法索 XAF 厄瓜多 ECS缅甸元 MMK爱沙尼亚 EEK埃及镑 EGP厄利垂亚 ERN西班牙彼萨塔 ESP 柬埔寨 KHR衣索比亚 ETB喀麦隆 XAF欧元 EUR芬兰 FIM斐济元 FJD法国法郎 FRF中非共和国 XAF 查德 XAF乔治亚 GEL迦纳塞第 GHC直布罗陀 GIP甘比亚 GMD几内亚法郎 GNF 希腊 GRD瓜地马拉 GTQ盖亚那 GYD港币 HKD纽西兰元 NZD克罗埃西亚 HRK 海地 HTG匈牙利福林 HUF 印尼卢比 IDR爱尔兰 IEP以色列 ILS印度卢比 INR伊拉克第纳尔 IQD 伊朗里亚尔 IRR 冰岛克郎 ISK荷兰盾 NLG义大利里拉 ITL牙买加元 JMD约旦第纳尔 JOD 日圆 JPY肯亚先令 KES萨尔瓦多El SVC朝鲜 KPW赤道几内亚 XAF韩国 KRW衣索比亚 ETB科威特第纳尔 KWD 哈萨克 KZT寮国 LAK黎巴嫩镑 LBP斯里兰卡卢比 LKR 赖比瑞亚元 LRD赖索托 LSL立陶宛 LTL卢森堡法郎 LUF拉托维亚 LVL利比亚第纳尔 LYD 摩洛哥迪拉姆 MAD 摩尔多瓦 MDL马达加斯加 MGF 马其顿第纳尔 MKD 加彭 XAF甘比亚 GMD蒙古 MNT澳门 MOP茅利塔尼亚 MRO 马耳他 MTL模里西斯卢比 MUR 马尔地夫 MVR希腊德拉玛 GRD 墨西哥比索 MXP 格陵兰 DKK马来西亚 MYR莫三比克 MZM奈米比亚 NAD奈及利亚奈拉 NGN 尼加拉瓜 NIO瓜地马拉 GTQ挪威克郎 NOK几内亚 GNF尼泊尔卢比 NPR 纽西兰 NZD阿曼 OMR巴拿马 PAB祕鲁 PEN菲律宾比索 PHP 巴基斯坦卢比 PKR 波兰 PLZ巴拉圭 PYG卡达 QAR罗马尼亚 ROL俄罗斯卢布 RUR 卢安达法郎 RWF 沙乌地阿拉伯 SAR 苏丹 SDD瑞典克郎 SEK新加坡 SGD斯洛维尼亚 SIT斯洛伐克 SKK塞拉里昂 SLL约旦 JOD索马利亚 SOS叙利亚 SYP史瓦济兰 SZL泰铢 THB塔吉克 TJR土库曼 TMM突尼西亚 TND拉托维亚 LVL汤加 TOP土耳其 TRL台湾 TWD坦尚尼亚 TZS乌克兰 UAH乌干达 UGX乌拉圭 UYU美圆 USD乌兹别克 UZS委内瑞拉 VEB越南 VND万那杜 VUV叶门 YER南斯拉夫 YUN世界各国家英文简称中国 china谁能给我世界各国和地区的英文名AF Afghanistan 阿富汗AL Albania 阿尔巴尼亚AD Andorra 安道尔AO Angola 安哥拉AI Angola 安圭拉AQ Antarctica 南极洲AG Ntigua and Barbuda 安地卡及巴布达AR Argentina 阿根廷AM Armenia 亚美尼亚AW Aruba 阿鲁巴AU Australia 澳大利亚AT Austria 奥地利AZ Azerbaijan 亚塞拜然AN Netherlands AntillesAE United Arab Emirates 阿联酋BS Bahamas 巴哈马BH Bahrain 巴林BD Bangladesh 孟加拉BB Barbados 巴贝多BY White Russia 白俄罗斯BZ Belize 贝里斯BE Belgium 比利时BJ Benin 贝南BM Bermuda 百慕大BT Bhutan 不丹BO Bolivia 玻利维亚BA Bosnia Hercegovina 波黑BW Botswana 波札那BV Bouvet Island 布维岛BR Brazil 巴西BN Brunei Darussalam 汶莱BG Bulgaria 保加利亚BF Burkina Faso 布其纳法索BI Burundi 蒲隆地BY Byelorussian SSR 白俄罗斯CM Cameroon 喀麦隆CA Canada 加拿大CV Cape Verde,Republic of 维德角CF The Central African Republic 中非共和国CL Chile 智利CN China 中国CX Christmas Island 圣诞岛CC COCOS Islands 可可岛CO Colombia 哥伦比亚CH Switzerland 瑞士CG Congo 刚果CK Cook Island 库克群岛CR Costa rica 哥斯大黎加CI Lvory Coast 象牙海岸CU Cuba 古巴CY Cyprus 塞普勒斯CZ Czech Republic 捷克共和国DK Denmark 丹麦DJ Djibouti 吉布提DM Gominica 多明哥DE Grmany 德国DO Dominica 多明尼加DZ Algeria 阿尔及利亚EC Ecuador 厄瓜多EC Ecuador 厄瓜多EG Egypt 埃及EH West Sahara 西撒哈拉ES Spain 西班牙EE Estonia 爱沙尼亚ET Ethiopia 衣索比亚FJ Fiji 斐济FK Falkland Islands 福克兰群岛FO Faroe IslandsFI Finland 芬兰FR France 法国FM Micronesia 密克罗尼西亚GA Gabon 加彭GQ Equatorial Guinea 赤道几内亚GF French Guiana 法属盖亚那GM Gambia 甘比亚GE Geia 乔治亚GH Ghana 迦纳GI Gibraltar 直布罗陀GR Greece 希腊GL Greenland 格陵兰GB United Kingdom 英国GD Grenada 格瑞那达GP Guadeloupe 瓜德罗普GU Guam 关岛GT Guatemala 瓜地马拉GN Guinea 几内亚GW Guinea-Bissau 几内亚比索GY Guyana 盖亚那HR Croatia 克罗埃西亚HT Haiti 海地HM Heard and McDonald Islands HN Honduras 宏都拉斯HK Hong Kong 中国香港HU Hungary 匈牙利IS Iceland 冰岛IN India 印度ID Indonesia 印度尼西亚IR Iran 伊朗IQ Iraq 伊拉克IO British Indian Ocean Territory 英联邦的印度洋领域IE Ireland 爱尔兰IL Israel 以色列IT Italy 义大利JM Jamaica 牙买加JP Japan 日本JO Jordan 约旦KZ Kazakstan 哈萨克KE Kenya 肯亚KI Kiribati 吉里巴斯KP North Korea 朝鲜KR Korea 韩国KH Cambodia 柬埔寨KM Comoros 葛摩KW kuwait 科威特KG Kyrgyzstan 吉尔吉斯斯坦KY Cayman Islands 开曼群岛KN St. Kitts and NevisLA Laos 寮国LK Sri Lanka 斯里兰卡LV Latvia 拉托维亚LB Lebanon 黎巴嫩LS Lesotho 赖索托LR Liberia 赖比瑞亚LY Libya 利比亚LI Liechtenstein 列支敦斯登LT Lithuania 立陶宛LU Luxembourg 卢森堡LC St. Lucia 圣露西亚MO Macao 中国澳门MG Malagasy 马达加斯加MW Malawi 马拉维MY Malaysia 马来西亚MV Maldives 马尔地夫ML Mali 马里MT Malta 马尔他MH Marshall Islands 马绍尔群岛MQ MauritaniaMR Mauritania 茅利塔尼亚MU Mauritius 模里西斯MX Mexico 墨西哥MD Moldova,Republic of 摩尔多瓦MC Monaco 摩纳哥MN Mongolia 蒙古MS MontserratMA Moroo 摩洛哥MZ Mozambique 莫三比克MM Burma 缅甸MP Northern Nariana Islands NA Namibia 奈米比亚NR Naura 诺鲁NP Nepal 尼泊尔NL Netherlands 荷兰NT Neutral ZoneNC New Caledonia 新喀里多尼亚NZ New Zealand 纽西兰NI Nicaragua 尼加拉瓜NE Niger 尼日NG Nigeria 奈及利亚NU Niue 纽埃NF Norfolk IslandNO Norway 挪威OM Oman 阿曼PK Pakistan 巴基斯坦PF French Polynesia 法属玻里尼西亚PW Palau 帛琉PA Panama 巴拿马PG Papua,Territory of 巴布亚纽几内亚PY Paraguay 巴拉圭PE Peru 祕鲁PH Philippines 菲律宾PN Pitcairn Islands 皮特开恩群岛PL Poland 波兰PT Portugal 葡萄牙PR Puerto Rico 波多黎各（美）PM St.Pierre and MiquelonQA Qatar 卡达RE Reunion IslandRO Romania 罗马尼亚RU Russia 俄罗斯联邦RW Rwanda 卢安达SV El Salvador 萨尔瓦多SH St.Helena 圣赫勒那SM San Marino 圣马利诺ST Sao Tome and Principe 圣多美与普林西比SA Saudi Arabia 沙乌地阿拉伯SN Senegal 塞内加尔SC Seychelles 塞席尔SL Sierra leone 狮子山SG Singapore 新加坡SK Slovakia 斯洛伐克SI Slovene 斯洛维尼亚SB Solomon Islands 索罗门群岛SO Somali 索马利亚SD Sudan 苏丹SR Surinam 苏利南SJ Svalbard and Jan Mayen IslandsSZ Swaziland 史瓦济兰SE Sweden 瑞典SY Syria 叙利亚SU USSR(formerly) 苏联(前)TD Chad 查德TF French Southern Territoties 法属南方领土TW Taiwan 中国台湾TJ Tsjikistan 塔吉克TZ Tanzania 坦尚尼亚TH Thailand 泰国TG Togo 多哥TK Tokela 托克劳TO Tonga 汤加TT Trinidad and T obago 千里达及托巴哥TN Tunisia 突尼西亚TR Turkey 土尔其TP East Timor 东帝TM Turkomanstan 土库曼TC Turks and Caicos IslandsTV Tuvalu 吐瓦鲁UG Uganda 乌干达UA Ukiain 乌克兰UK England 英国（正式程式码为GB）US America 美国UM 美国边远小岛UY uruguay 乌拉圭UZ Uzbekstan 乌兹别克VA Vatican 梵蒂冈（罗马教庭）VE Venezuela 委内瑞拉VN Vietnam 越南VG Virgin Islands(British) 不列颠岛(英) VI Vigin Islands(U.S.) 不列颠岛(美)VC St. Vincent and the GrenadinesWS Western Samoa 西萨摩亚WF Wallis and Furtuna IslandsYE Yemen 叶门YU Yugoslavia 南斯拉夫ZA South Africa 南非ZR Zaire 扎伊尔ZM Zambia 尚比亚ZW Zimbabwe 辛巴威急求世界各国国名的英文（三个字母）简写？CHN, AUS, CAN, FRA,GB,RUS世界舞台的英文，和英文简写world arenaWA求世界各国（地区）国花亚洲中国--国花蕙芷、牡丹（未定）台湾--区花梅花香港--区花紫荆花澳门--区花莲花朝鲜--国花朝鲜杜鹃（金达莱）韩国--国花木槿日本--国花樱花、菊花寮国--国花鸡蛋花缅甸--国花龙船花泰国--国花素馨、睡莲马来西亚--国花扶桑印度尼西亚--国花毛茉莉新加坡--国花万带兰菲律宾--国花毛茉莉印度--国花荷花、菩提树尼泊尔--国花杜鹃花不丹--国花蓝花绿绒蒿孟加拉--国花睡莲斯里兰卡--国花睡莲阿富汗--国花郁金香巴基斯坦--国花素馨伊朗--国花大马士革月季伊拉克--国花月季（红）阿拉伯联合大公国--国花孔雀、百日草叶门--国花咖啡叙利亚--国花月季黎巴嫩--国花雪松以色列国--国花银莲花、油橄榄土耳其--国花郁金香欧洲挪威--国花欧石楠瑞典--国花欧洲白蜡芬兰--国花铃兰丹麦--国花冬青冰岛--国花三色堇俄罗斯--国花向日葵波兰--国花三色堇捷克--椴树斯洛伐克--国花石竹、玫瑰德国--国花矢车菊塞尔维亚--国花桃花克罗埃西亚--国花天竺葵马其顿--国花矢车菊匈牙利--国花郁金香罗马尼亚--国花狗蔷薇保加利亚--国花玫瑰、突厥蔷薇英国--国花玫瑰爱尔兰--国花白车轴草法国--国花鸢尾荷兰--国花郁金香比利时--国花虞美人、杜鹃花卢森堡--国花月季摩纳哥--国花石竹西班牙--国花香石竹葡萄牙--国花雁来红、薰衣草瑞士--国花火绒草奥地利--国花火绒草义大利--国花雏菊、月季圣马利诺--国花仙客来马耳他--国花矢车菊希腊--国花油橄榄、老鼠?北美洲加拿大--国花糖槭美国--国花玫瑰墨西哥--国花大丽花、仙人掌瓜地马拉--国花爪哇木棉萨尔瓦多--国花丝兰宏都拉斯--国花香石竹尼加拉瓜--国花百合（姜黄色）哥斯大黎加--国花卡特兰古巴--国花姜花、百合牙买加--国花愈疮木海地--国花刺葵多明尼加共和国--国花桃花心木南美洲哥伦比亚--国花卡特兰、咖啡厄瓜多--国花白兰花祕鲁--国花金鸡纳树、向日葵玻利维亚--国花向日葵巴西--国花卡特兰、毛蟹爪莲智利--国花野百合阿根延--国花刺桐乌拉圭--国花商陆、山楂大洋洲澳大利亚--国花金合欢、桉树纽西兰--国花桫椤、四翅槐斐济--国花扶桑非洲埃及--国花睡莲利比亚--国花石榴突尼西亚--国花素馨阿尔及利亚--国花夹竹桃、鸢尾摩洛哥--国花月季、香石竹塞内加尔--国花猴面包树赖比瑞亚--国花胡椒迦纳--国花海枣苏丹--国花扶桑坦尚尼亚--国花丁香、月季加彭--国花火焰树尚比亚--国花叶子花马达加斯加--国花凤凰木、旅人蕉塞席尔--国花凤尾兰辛巴威--国花嘉兰，梅花也是国花之一。
IT120资料
P-DIP
0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C
0.016 0.019 DIM. A 0.016 0.021 DIM. B 0.029 0.045
IT122 45 MIN. 45 6.2 60 80 100 0.5 1 1 2 2 10 180 3 MIN. MIN. MIN. MIN. MIN. MAX. MAX. MAX. MAX. MAX. MAX. MIN. MAX.
UNITS CONDITIONS V IC = 10µA IE = 0 V V V IC = 10µA IE = 10µA IC = 10µA IC = 10µA V nA nA pF pF nA MHz dB IB = 0 IC = 0 IE = 0 VCE = 5V NOTE 2
C1 B1 E1 N/C
1 2 3 4
8 7 6 5
C2 B2 E2 N/C
0.228 (5.79) 0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
-65°C to +200°C -55°C to +150°C B1 ONE SIDE 250mW 2.3mW/°C BOTH SIDES 500mW 4.3mW/°C E1 E2 B2
TLP120资料
-3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4
0.1
ΔVF / ΔＴa – IF
0.3 0.5 1
3 5 10
Forward current IF (mA)
30 50
Pulse forward current IFP (mA)
1000 500 300
100 50 30
IF(RMS) ∆IF / °C
IFP Tj VCEO VECO IC PC
∆PC / °C
50 -0.7 (Ta ≥ 53°C) 1 (100µs pulse, 100pps)
125 80 7 50 150
-1.5
mA mA / °C
A °C V V mA mW
mW / °C
Detector
Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Total package power dissipation Total package power dissipation derating (Ta ≥25°C)
IFP - VFP
10
5
Pulse width ≤ 10µs
Repetitive
3
Frequency = 100Hz
Ta = 25°C 1
0.6
1.0
1.4
1.8
2.2
2.6
3.0
Pulse forward voltage VFP (V)
5
2002-09-25
ΔVF /ΔＴa（mＶ/ ℃）
PM100RLA120中文资料
INSULATED PACKAGEINSULATED PACKAGE2.32.43.52.50.81.03.01.2110Min.Typ.Max.Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current–I C = 100A, V D = 15V, V CIN = 15V (Fig. 2)T j = 25°C T j = 125°CELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)INVERTER PARTParameterSymbol ConditionV CE(sat)I CESV EC t on t rr t c(on)t off t c(off)Limits ———0.5——————1.81.92.51.00.50.42.00.7——T j = 25°C T j = 125°CFWDi Forward VoltageSwitching TimeV D = 15V, V CIN = 0V ↔15V V CC = 600V, I C = 100A T j = 125°C Inductive Load (Fig. 3, 4)V CE = V CES , V CIN = 15V(Fig. 5)V D = 15V, I C = 100A V CIN = 0V (Fig. 1)V mAVµsUnit Bottom viewYX* If you use this value, R th(f-a) should be measured just under the chips.(Note-1) Tc (under the chip) measurement point is below.armaxisX YUnit : mm UPIGBT 23.756.7VPWPUNWNFWDi 23.043.4IGBT 57.256.7FWDi 56.543.4IGBT 87.756.7FWDi 86.543.4IGBT 37.728.7FWDi 38.042.0IGBT 100.728.7FWDi 101.542.0VNIGBT 70.228.7FWDi 71.542.0Br IGBT10.826.9FWDi 7.260.60.16*0.26*0.26*0.40*0.023°C/WR th(j-c)Q R th(j-c)F R th(j-c)Q R th(j-c)F R th(c-f)Inverter IGBT (per 1 element) (Note-1)Inverter FWDi (per 1 element) (Note-1)Brake IGBT (Note-1)Brake FWDi(Note-1)Case to fin, (per 1 module)Thermal grease applied(Note-1)Symbol ConditionUnitMin.——————————Junction to case Thermal ResistancesTHERMAL RESISTANCESContact Thermal ResistanceParameterLimits Typ.Max.ParameterSymbolSupply Voltage Protected bySCSupply Voltage (Surge)Storage Temperature Isolation Voltage ConditionV CC(surge)T stgV iso Ratings V CC(PROT)8001000–40 ~ +1252500Unit V °C V rmsV V D = 13.5 ~ 16.5V, Inverter Part,T j = +125°C StartApplied between : P-N, Surge value60Hz, Sinusoidal, Charged part to Base, AC 1 min.TOTAL SYSTEMINSULATED PACKAGE3.53.5————Main terminal screw : M5Mounting partscrew : M5—Symbol ParameterMounting torque Mounting torque WeightConditionUnit N • m N • m gLimits Min.Typ.Max.2.52.5—3.03.0800MECHANICAL RATINGS AND CHARACTERISTICS—————V CE(sat)I CESV FM V mAMin.Typ.Max.V Collector-Emitter Saturation Voltage FWDi Forward Voltage Collector-Emitter Cutoff CurrentI F = 50A(Fig. 2)T j = 25°C T j = 125°CUnit ParameterSymbol ConditionLimits 2.32.43.51101.81.92.5——T j = 25°C T j = 125°CBRAKE PARTV D = 15V, I C = 50A V CIN = 0V (Fig. 1)V CE = V CES , V CIN = 15V(Fig. 5)V D = 15V, V CIN = 15VApplied between :U P -V UPC , V P -V VPC , W P -V WPCU N • V N • W N • B r -V NCI D °C V mA ms34121.82.3—————12.5—0.0115—mA Circuit CurrentInput ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay TimeOver Temperature Protection Supply Circuit Under-Voltage ProtectionFault Output Current Minimum Fault Output Pulse WidthV th(ON)V th(OFF)SC t off(SC)OT OT r UV UV r I FO(H)I FO(L)t FOTrip level Reset level Trip level Reset levelCONTROL PART——1.21.7200100—135—11.5———1.0ParameterSymbol ConditionMax.Min.Typ.Unit Limits 2461.52.0——0.214512512.012.5—101.8(Note-2)Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate toprotect it.V D = 15VDetect T j of IGBT chip –20 ≤ T j ≤ 125°C V D = 15V, V FO = 15V (Note-2)V D = 15V(Note-2)V µs V N1-V NC V *P1-V *PCInverter partBrake part A –20 ≤ T j ≤ 125°C, V D = 15V (Fig. 3,6)V D = 15V(Fig. 3,6)RECOMMENDED CONDITIONS FOR USERecommended valueUnit ConditionSymbol ParameterV Applied across P-N terminalsApplied between :V UP1-V UPC , V VP1-V VPCV WP1-V WPC , V N1-V NC (Note-3)Applied between :U P -V UPC , V P -V VPC , W P -V WPCU N • V N • W N • B r -V NCUsing Application Circuit of Fig. 8For IPM ’s each input signals(Fig. 7)Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time≤ 80015±1.5≤ 0.8≥ 9.0≤ 20≥ 2.5V CC V CIN(ON)V CIN(OFF)f PWM t deadV D V kHz µsV (Note-3)With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peakINSULATED PACKAGEINSULATED PACKAGEINSULATED PACKAGEINSULATED PACKAGEINSULATED PACKAGE。
IRL520N中文资料
IRL520NHEXFET ® Power MOSFETPD - 91494Al Logic-Level Gate Drivel Advanced Process Technology l Dynamic dv/dt Ratingl 175°C Operating Temperature l Fast SwitchinglFully Avalanche RatedFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220contribute to its wide acceptance throughout the industry.Description5/13/98ParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS @ 10V 10I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 7.1A I DMPulsed Drain Current 35P D @T C = 25°C Power Dissipation 48W Linear Derating Factor 0.32W/°C V GS Gate-to-Source Voltage± 16V E AS Single Pulse Avalanche Energy 85mJ I AR Avalanche Current6.0A E AR Repetitive Avalanche Energy 4.8mJ dv/dt Peak Diode Recovery dv/dt 5.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds 300 (1.6mm from case )°CMounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m)Absolute Maximum RatingsParameterTyp.Max.UnitsR θJC Junction-to-Case––– 3.1R θCS Case-to-Sink, Flat, Greased Surface 0.50–––°C/WR θJAJunction-to-Ambient–––62Thermal ResistanceIRL520NIRL520NIRL520NIRL520NIRL520NIRL520NIRL520N。
LAA120LSTR;LAA120PLTR;LAA120;中文规格书,Datasheet资料
LAA120LLAA120L is a 250V, 170mA, 20Ω2-Form-A relay. It features enhanced peak load current handling capability and improved on-resistance. Current limiting version is available (“L” suffix, see specification for variations in per-formance).•Telecommunications •Telecom Switching•Tip/Ring Circuits•Modem Switching (Laptop, Notebook, Pocket Size)•Hookswitch •Dial Pulsing •Ground Start •Ringer Injection •Instrumentation •Multiplexers •Data Acquisition •Electronic Switching •I/O Subsystems•Meters (Watt-Hour, Water, Gas)•Medical Equipment-Patient/Equipment Isolation •Security •Aerospace•Industrial Controls•UL Recognized: File Number E76270•CSA Certified: File Number LR 43639-10•BSI Certified to:•BS EN 60950:1992 (BS7002:1992)Certificate #: 7344•BS EN 41003:1993Certificate #: 7344•Small 8 Pin DIP Package•Low Drive Power Requirements (TTL/CMOS Compatible)•No Moving Parts •High Reliability•Arc-Free With No Snubbing Circuits •3750V RMS Input/Output Isolation •FCC Compatible •VDE Compatible•No EMI/RFI Generation•Machine Insertable, Wave Solderable•Current Limiting,Surface Mount and Tape & Reel Versions AvailableApplicationsFeaturesDescriptionApprovalsDUAL POLE OptoMOS ®RelayOrdering InformationPin ConfigurationSwitching Characteristics of Normally Open (Form A) Devices––Load - Switch #1Load - Switch #1Load - Switch #2Load - Switch #2AC/DC Configuration LAA120L PinoutLAA120LAbsolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this data sheet is not implied.Exposure of the device to the absolute maximum ratings for an extended period may degrade the device and effect its reliability.Absolute Maximum Ratings (@ 25˚ C)1Derate Linearly 1.33 mw/˚C 2Derate Linearly 6.67 mw/˚CElectrical CharacteristicsLAA120LPERFORMANCE DATA*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department.LAA120LTypical LED Forward Voltage Drop (N=50 Ambient Temperature = 25°C)I= 5mADC 353025201510501.171.191.211.231.25LED Forward Voltage Drop (V)D e v i c e C o u n t (N )LAA120LTypical On-Resistance Distribution (N=50 Ambient Temperature = 25°C)(Load Current = 170mADC)353025201510514.014.815.614.415.2On-Resistance (Ω)D e v i c e C o u n t (N )LAA120LTypical Blocking Voltage Distribution (N=50 Ambient Temperature = 25°C)35302520151050380388396384392400Blocking Voltage (V)D e v i c e C o u n t (N )LAA120LTypical I F for Switch Dropout (N=50 Ambient Temperature = 25°C)(Load Current = 170mADC)LED Current (mA)D e v i c e C o u n t (N )2520151050LAA120LTypical I F for Switch Operation (N=50 Ambient Temperature = 25°C)(Load Current = 170mADC 40353025201510500.81.21.60.61.01.41.8LED Current (mA)D e v i c e C o u n t (N ))LAA120LTypical Turn-On Time(N=50 Ambient Temperature = 25°C)(Load Current = 170mADC; I= 5mADC)Turn-On(ms)D e v i c e C o u n t (N )302520151050LAA120LTypical Turn-Off Time(N=50 Ambient Temperature = 25°C)(Load Current = 170mADC; I= 5mADC)Turn-Off (ms)D e v i c e C o u n t (N )35302520151050LAA120LTypical Load Current vs. TemperatureTemperature (°C)L o a d C u r r e n t (m A )250200150100500LAA120LTypical Leakage vs. Temperature (Measured across Pins 5 & 6 or 7 & 8)Temperature (°C)L e a k a g e (µA )0.180.160.140.120.100.080.06LAA120LTypical Blocking Voltagevs. TemperatureTemperature (°C)B l o c k i n g V o l t a g e (V R M S )400395390385380375LAA120LTypical Turn-On vs. Temperature (Load Current = 170mADC)Temperature (°C)T u r n -O n (m s )0.60.50.40.30.20.10LAA120LTypical Turn-Off vs. Temperature (Load Current = 170mADC)Temperature (°C)T u r n -O f f (m s )0.300.250.200.150.100.05LAA120LPERFORMANCE DATA**The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department.LAA120LTypical LED Forward Voltagevs. TemperatureTemperature (°C)L E D F o r w a r d V o l t a g e (V )1.81.61.41.21.00.8LAA120LTypical Turn-On vs. LED Forward Current(Load Current = 170mADC)T u r n -O n (m s )LED Forward Current (mA)0.400.350.300.250.200.150.10LAA120LTypical Turn-Off vs. LED Forward Current(Load Current = 170mADC)LED Forward Current (mA)T u r n -O f f (m s)0.1600.1500.1400.1300.1200.1100.100LAA120LTypical On-Resistance vs. Temperature (Load Current = 170mADC; I= 5mADC)Temperature (°C)O n -R e s i s t a n c e (Ω)6050403020100LAA120LTypical IF for Switch Operationvs. Temperature(Load Current = 170mADC)Temperature (°C)L E D C u r r e n t (m A )3.0002.5002.0001.5001.0000.500LAA120LTypical I Ffor Switch Dropoutvs. Temperature(Load Current = 170mADC)Temperature (°C)L E D C u r r e n t (m A )3.0002.5002.0001.5001.0000.500LAA120LTypical Load Current vs. Load Voltage(Ambient Temperature = 25°C)I= 5mADCLoad Voltage (V)L o a d C u r r e n t (m A )200150100500-50-100-150-200LAA120LEnergy Rating CurveTimeL o a d C u r r e n t (A )1.21.00.80.60.40.2LAA120LTypical Current Limiting vs. TemperatureI = 5mADCTemperature (°C)C u r r e n t (m A )400350300250200150100500LAA120LDimensionsmm (inches)Mechanical DimensionsPC Board Pattern (Top View)2.540 ± .127(.300 ± .005)9.652 ± .3818 Pin DIP Through Hole (Standard)PC Board Pattern (Top View)2.540 ± .127 .1271.193(.031)(.318 ±.005)PC Board Pattern (Top View)2.540 ± .127.1271.905 ±(.075 ±(.059 ± .005)4.445 ±(.175 ±8 Pin DIP Surface Mount (“S ” Suffix)9.652 ± .381LAA120LMechanical DimensionsTape and Reel Packaging for 8 Pin Flatpack PackageTape and Reel Packaging for 8 Pin Surface Mount PackageDimensionsmm(inches)For additional information please visit our website at: Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare’s Standard Terms and Conditions of Sale, Clare, Inc. assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to sup-port or sustain life, or where malfunction of Clare’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. Clare, Inc. reserves the right to discontinue or make changes to its products at any time without notice.Specification: DS-LAA120L-R4.0©Copyright 2002, Clare, Inc.All rights reserved. Printed in USA.6/25/02分销商库存信息:IXYSLAA120LSTR LAA120PLTR LAA120。
IRLZ24NL中文资料
IRLZ24NS/LHEXFET ® Power MOSFETPD - 91358El Advanced Process Technology l Surface Mount (IRLZ24NS)l Low-profile through-hole (IRLZ24NL)l 175°C Operating Temperature l Fast Switchingl Fully Avalanche Rated ParameterTyp.Max.UnitsR θJC Junction-to-Case––– 3.3R θJAJunction-to-Ambient ( PCB Mounted,steady-state)**–––40Thermal Resistance°C/WParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS @ 10V 18I D @ T C = 100°C Continuous Drain Current, V GS@ 10V 13A I DMPulsed Drain Current 72P D @T A = 25°C Power Dissipation 3.8W P D @T C = 25°C Power Dissipation 45W Linear Derating Factor 0.30W/°C V GS Gate-to-Source Voltage±16V E AS Single Pulse Avalanche Energy 68mJ I AR Avalanche Current11A E AR Repetitive Avalanche Energy 4.5mJ dv/dt Peak Diode Recovery dv/dt 5.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds300 (1.6mm from case )°CAbsolute Maximum RatingsFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D 2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRLZ24NL) is available for low-profile applications.Description2 D PakT O -2625/12/98lLogic-Level Gate DriveIRLZ24NS/LIRLZ24NS/LIRLZ24NS/LIRLZ24NS/LIRLZ24NS/LIRLZ24NS/LIRLZ24NS/LIRLZ24NS/LIRLZ24NS/L。
ERA中文资料（minicircuits）中文数据手册「EasyDatasheet-矽搜」
ERA中文资料（minicircuits）中文数据手册「EasyDatasheet-矽搜」ERAERA-SM50?低电量,高达+13.5 dBm 范围内输出JFREQ.GHzMODEL u NO.ERA-1ERA-2ERA-3ERA-1SM ERA-21SM ERA-2SM ERA-33SM ERA-3SM ERA-8SMf L - f U DC-8DC-6DC-3DC-8DC-8DC-6DC-3DC-3DC-20.11over frequency, GHz 234688.2——8.28.9————Min.@2 GHz91316911.213151617所有规格在25℃MAXIMUM DYNAMIC POWER (dBm)RANGE at 2 GHz*at 2 GHz*Output Input (1 dB (no Comp.)Typ. Min. dmg)12.0 10.013.0 11.012.5 9.012.0 10.012.6 10.613.0 11.013.5 11.512.5 9.012.5 —151513151515131313GAIN , dB T ypicalVSWR (:1)T yp.In OutNF IP3Device 3-f U** DC-3 3-f U ** I (dB) (dBm) DC-3P Current Volt.Typ. Typ. GHz GHz GHz GHz (mA ) (mW) (mA ) Typ Min Max4.3 264.0 263.5 254.3 264.7 264.0 26 1.5 1.81.3 1.41.5 —1.5 1.81.1 1.41.3 1.4 1.5 1.91.2 1.61.4 —1.5 1.91.3 1.91.2 1.61.25 —1.4 —1.82.275 33075 33075 33075 33075 33075 33075 33075 33065 2504040354040404035363.4 3.04.13.4 3.0 4.13.2 3.0 4.13.4 3.0 4.13.5 3.0 4.13.4 3.0 4.14.3 3.8 4.83.2 3.0 4.13.7 3.2 4.2ABSO-LUT E MAX.RAT ING 3DC OPERAT ING POWER 4at Pin 3T HERMAL CASE RESIS- ST YLE T ANCE θjcTyp.°C/W178155154183194160140159140Note BC O N N E C T I O NPRICE $Qty.(30)12.3 12.1 11.8 10.9 9.7 7.916.2 15.8 15.2 14.4 13.1 11.222.1 21.0 18.7 16.8 ——12.3 12.1 11.8 10.9 9.7 7.914.2 13.9 13.2 12.2 10.8 8.716.2 15.8 15.2 14.4 13.1 11.219.3 18.7 17.4 15.9 —22.1 21.0 18.7 16.8 —31.5 25.0 19.0 15.0 12.0———VV105 cb 1.37VV105 cb 1.52VV105 cb 1.67WW107 cb 1.42WW107 cb 1.57WW107 cb 1.57WW107 cb 1.72WW107 cb 1.72WW107 cb 1.223.9 28.5 1.6 —3.5 25 1.5 —3.1 25 1.4 1.8特征l l l l低热阻小型微波放大器频率范围,直流到8GHz,可用到10GHz高达18.4 dBm 的典型. （16.5 dBm 的分钟）输出功率模型识别M odelERA-1, ERA-1SM ERA-2, ERA-2SM ERA-21SM ERA-3, ERA-3SM ERA-33SM ERA-4,-4SM ERA-4X SM ERA-5, ERA-5SM ERA-50SM ERA-51SM ERA-5X SM ERA-6, ERA-6SM ERA-8SM 记号(s ee note below)122133344X 550515X 6E8绝对最大额定值工作温度：-45°C 至85°C 储存温度：-65℃至150℃Note: Prefix letter (optional) designates assembly———location. Suffix letters (optional) are for w aferidentification.prefix letter number注意：Aqueous was hable at 1 GHz for ERA-4,5,6, 4SM,4XSM ,5SM,5XSM, 50SM, 51SM, 6SM, 8SM.f u is the upper frequency limit for each model as s hown in the table;for ERA-8SM VSW R (In & Out) is s pecified at DC-1GHz & 1-4 GHz.*** Gain and VSW R are s pecified at 1.5 GHz.J Low frequency cutoff determined by external coupling capacitors .A. Environmental s pecifications and re-flow s oldering information available inGeneral Information Section.B. Units are non-hermetic unles s otherwis e noted. For details on cas edimens ions & finis hes s ee “Cas e Styles & Outline Drawings ”.C. Prices and Specifications s ubject to change without notice.D. For Quality Control Procedures s ee Table of Contents , Section 0,"Mini-Circuits Guarantees Quality" article. For Environmental Specifications s ee Amplifier Selection Guide.1. Model number des ignated by alphanumeric code mark ing.2. ERA-SM models available on tape and reel.3. Permanent damage may occur if any of thes e limits are exceeded. Thes eratings are not intended for continuous normal operation.4. Supply voltage mus t be connected to pin 3 through a bias res is tor in orderapplication.html. Reliability predictions are applicable at s pecified current & normal operating conditions .u ***suffix letterMTTF vs. Junction Temp.(For all ERA Models except ERA -5, ERA -5SM)1,000,000100,000平均无故障时间（年）10,0001,00010010180100120140160180 200Junction Temp. (?C)040618插入式及表面贴装ERAERA-SM中等功率,高达18.4 dBm 的输出JFREQ.GHzMODEL u NO.ERA-6ERA-4ERA-5ERA-6SM ERA-4SM NEW ERA-4X SM NEW ERA-5X SM f L - f UDC-4DC-4DC-4DC-4DC-4DC-4DC-40.11over frequency, GHz 234Min.@2 GHz10.5111610.5111216141616所有规格在25℃MAXIMUM DYNAMIC POWER (dBm)RANGE at 2 GHz*at 2 GHz*Output Input (1 dB (no Comp.)Typ. Min. dmg)17.9 1617.3 1518.4 16.517.9 1617.3 1517.0 15.017.8 16.518.1 16.518.4 16.517.2 16.020201320202013131313GAIN , dB T ypicalVSWR (:1)T yp.In OutNF IP3Device (dB) (dBm) DC-3 3-fU ** DC-3 3-f U ** I P Current Volt.Typ. Typ. GHz GHz GHz GHz (mA ) (mW) (mA ) Typ Min Max4.5 36 1.3 1.24.2 34 1.2 1.24.3 32.5 1.3 1.34.54.24.23.536343533 1.31.21.21.2 1.21.21.21.3 1.6 1.81.3 1.81.2 1.31.61.31.21.21.81.81.41.4120 650120 650120 650120120100120650650650650706565706565656565605.0 4.6 5.64.5 4.2 5.54.9 4.2 5.55.04.54.54.94.64.24.24.25.65.55.55.5ABSO-LUT E MAX.RAT ING 3DC OPERAT INGPOWER 4at Pin 3T HERMAL CASE RESIS- ST YLE T ANCE θjcTyp.°C/W170163278175168196133154283177Note BC O N N E C T I O NPRICE $Qty.(30)12.6 12.5 12.2 11.7 11.314.3 14.0 13.4 12.7 11.820.2 19.5 18.5 16.714.312.614.314.720.512.514.014.219.512.213.413.517.611.712.71 2.015.511.311.811.813.7VV105 cb 3.85VV105 cb 3.85VV105 cb 3.85WW107WW107WW107WW107cb 3.90cb 3.90cb 1.69cb 1.69ERA-51SM DC-4 18.0 17.4 16.1 14.8 12.5ERA-5SM DC-4 20.2 19.5 17.6 15.6 14.0ERA-50SM *** DC-1.5 20.7 19.4 18.3 ——4.1 33 1.1 1.24.3 32.5 1.3 1.33.5 32.5 1.3 — 1.2 1.91.2 1.31.2 —120 650120 650120 650 4.5 4.25.54.9 4.2 5.54.4 4.0 4.9WW107 cb 3.90WW107 cb 3.90WW107 cb 2.95查看建议的PCB 布局PL-075的时代车型R BIAS"1%" Resistor Values (ohms) for Optimum Biasing of ERA ModelsVccERA -1ERA -1SM 90.9113137162187215237261287309332357383412ERA -2ERA -2SM 88.7113137162187215237261287309332365392412ERA -21SM 88.7113137162187215237261287316340365392412ERA -3ERA -3SM 107133162191221249280309340365392422453475ERA -33SM 69.893.1115140165191215243267287316340365392ERA -4,4SM,4XSM38.352.366.580.695.3110127143158174187205221237ERA -5,5SM33.248.763.478.795.3110124140158174187205221232ERA -50SM,ERA -6,-51SM,5XSM ERA -6SM40.230.153.643.268.156.282.569.897.684.511397.612711314 3127158140174154191169205182221196237210ERA -8SM88.7118143174200226255280309340365392422453典型偏置配置7891011121314151617181920MTTF 与结温. （E RA-5,E RA-5SM ）1,000NSN 指南MCL NO.NSN5962-01-459-90755996-01-516-54385962-01-459-74105962-01-459-9314ERA-1SM ERA-3SM ERA-4SM ERA-5SM引脚连接PORT RF IN RF OUT DCCASE GND NOT USED DEM O BOARDcb 1332,4—ERA-T B平均无故障时间（年）100101140160180结温. （C ）( C)200220可用的设计师套装KIT NO.Model TypeNo. of Units in KitDes criptionPrice $per k itK1-ERA K2-ERA K1-ERA SM K2-ERA SM K3-ERA SM ERA ERA ERA -SM ERA -SM ERA -SM 302030203010每1,2,310每4,5 10每撒上,撒下,3SM 的10每4SM ,5SM 的10每4SM ,5SM ,6SM 的49.9569.9549.9569.9599.95040618。
SmartPower 120上的LSR应用
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SmartPower 120/350 LS R的注射过程：嵌入印刷电路板两腔模具SmartPower 120/350 LSR的注射过程：将部件放到输送带上并送入包装工作站
S martPower 120/350 LS R注射机配备Servomix X200计量单元从左到右：Drinky饮料管理器成品，配有电池的PCB
窗口中维持上下控制极限的能力。
重要的是要注意，注射机侧使用粉碎料容易产生工作环境整洁的问题。
一定数量的物料粉尘和粉碎机的保养对注射机上使用粉碎料的效果会产生直接的影响。
在封闭的粉碎区域粉碎废料有助于保持成型车间的整洁。
加工的人员进行广泛的培训，也是材料再加工获得成功的关键。
回收加工的第一步是完全消除生产车间的废料。
当需要使用粉碎料时，请确保你的工厂已经针对废料的再加工制定了相应计划，以保证最终能够充分利用生产过程中丢失的材料。
废料再利用虽
初始料和再加工的混合物应具有单独的经过验证的工艺过程，以确保过程控制在注射机上重新引入粉碎料，应先通过一台掺混机进行处理，以确保粉碎料与初始料的比例保持一致
SmartPower 120/350 LSR注射机。
LSCR中文资料
KLC 1 KLC 2 KLC 3 KLC 4 KLC 5 KLC 6 KLC 7 KLC 8 KLC 10 KLC 12 KLC 15 KLC 171⁄2 KLC 20 KLC 25 KLC 30 KLC 35 KLC 40 KLC 45 KLC 50 KLC 60 KLC 70 KLC 80 KLC 90 KLC 100 KLC 110 KLC 125 KLC 150 KLC 175 KLC 200 KLC 225 KLC 250 KLC 300 KLC 350 KLC 400 KLC 450 KLC 500 KLC 600 KLC 700 KLC 800 L70S 10 L70S 15 L70S 20 L70S 25 L70S 30 L70S 35 L70S 40 L70S 50 L70S 60 L70S 70 L70S 80 L70S 90 L70S 100 L70S 125 L70S 150 L70S 175 L70S 200 L70S 225 L70S 250 L70S 300 L70S 350 L70S 400 L70S 450 L70S 500 L70S 600 L70S 700 L70S 800
SAFETY
s
200,000 A.I.R. — Reliable interruption of all overcurrents up to 200,000 amperes . . . meets present and future system requirements. (Note: L15S series has 100,000 A.I.R.) Extremely Current Limiting — Low I2t and peak let-through currents meet most semiconductor requirements. UL Recognized — Littelfuse semiconductor fuses are recognized under the components program of Underwriters Laboratories, Inc., and carry the mark. UL Recognized semiconductor fuses may be used to provide supplementary protection in UL listed equipment.
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IRLR/U120N
HEXFET ®
Power MOSFET
Description
5/11/98
Parameter
Max.
Units
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 10I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 7.0A I DM
Pulsed Drain Current 35P D @T C = 25°C Power Dissipation 48W Linear Derating Factor 0.32W/°C V GS Gate-to-Source Voltage
± 16V E AS Single Pulse Avalanche Energy 85mJ I AR Avalanche Current
6.0A E AR Repetitive Avalanche Energy 4.8mJ dv/dt Peak Diode Recovery dv/dt 5.0
V/ns T J Operating Junction and
-55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R θJC Junction-to-Case
––– 3.1R θJA Junction-to-Ambient (PCB mount) **–––50°C/W
R θJA
Junction-to-Ambient
–––
110
Thermal Resistance
D -P AK T O -252A A I-P A K TO -251AA
l Surface Mount (IRLR120N)l Straight Lead (IRLU120N)
l Advanced Process Technology l Fast Switching
l
Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
PD - 91541B
1
IRLR/U120N
IRLR/U120N
IRLR/U120N
IRLR/U120N
IRLR/U120N
IRLR/U120N
IRLR/U120N
IRLR/U120N
IRLR/U120N
元器件交易网
Note: For the most current drawings please refer to the IR website at:
/package/。