Effect of tool pin profile on microstructure and tensile properties of friction stir weld
capaNCDT 6200 系列传感器快速手册说明书
DT6220 DT6222 DT6228 DT6230 DT6238MICRO-EPSILON MESSTECHNIKGmbH & Co. KG Koenigbacher Str. 1594496 Ortenburg / Germany Tel. +49 (0) 8542 / 168-0Fax +49 (0) 8542 / 168-90**************************** You can find further information about the measurement system in the operat-ing instructions. They are available at:/download/manuals/man--capaNCDT-6200--en.pdf /download/manuals/man--capaNCDT-6222--en.pdf www.micro-epsilon.de/download/manuals/man--capaNCDT-6228-6238--en.pdfContentsGeneral (3)Symbols Used (3)Warnings (3)Intended Use (4)Proper Environment (5)Setup, Connection Options (6)Ground Connection, Grounding (7)Synchronization (8)Assembly (9)Sensor (9)Controller (10)Inserting Demodulator Module (11)Commissioning (13)LEDs .................................................................................13Commissioning, IP Address (16)Channel Information, Measuring Range (17)Math Function (17)Positioning the Target (18)Distance Measurements (18)Operation and Maintenance (19)Disclaimer ....................................................................19GeneralGeneralSymbols UsedThe following symbols are used in this document:Indicates a hazardous situation which, if not avoided, may result in minor ormoderate injury.Indicates a situation that may result in property damage if not avoided.Indicates a user action.i Indicates a tip for users.Measure Indicates hardware or a software button/menu.Sensor measurement directionWarningsDisconnect the power supply before touching the sensor surface.>Risk of injury, static dischargeConnect the power supply and the display/output device according to the safety regulations forelectrical equipment.>Risk of injury, damage to or destruction of the sensor and/or the controllerAvoid shocks and impacts to the sensor and the controller.>Damage to or destruction of the sensor and/or the controllerThe supply voltage must not exceed the specified limits.>Damage to or destruction of the sensor and/or the controllerProtect the sensor cable against damage.>Destruction of the sensor, failure of the measurement system.General Intended Use-The system is designed for use in an industrial environment. It is used formeasuring displacement, distance, movement and thickness,measuring the position of parts or machine components.-The measuring system must only be operated within the limits specified in the technical data.-The measuring system must be used in such a way that no persons are endangered or machines and other materi-al goods are damaged in the event of malfunction or total failure of the measuring system.-Take additional precautions for safety and damage prevention in case of safety-related applications.GeneralProper EnvironmentT emperature range controllerOperation Storage+10 ... +60 °C (+50 ... +140 °F)-10 ... +75 °C (+14 ... +167 °F)Temperature range sensor Operation Storage CS005, CS02, CS05, CS08,CS1, CS2, CS3, CS5, CS10-50 ... +200 °C (-58 ... +392 °F)-50 ... +200 °C (-58 ... +392 °F)CSH02, CSH05, CSH1, CSH1.2, CSH2CSH02FL, CSH05FL, CSH1FL,CSH1.2FL, CSH2FL, CSH3FLCSE01, CSE05, CSE025, CSE1, CSE2CS1HPCSG0.50, CSG1.00-50 ... +100 °C (-58 ... +212 °F)-50 ... +100 °C (-58 ... +212 °F)CSE-x/HT/CA-1,0Sensor with cable: -50 … +800 °C(-58... +1472 °F)-50 … +200 °C(-58 ... +392 °F) Plug: -50 … +200 °C(-58 ... +392 °F)Humidity 5 ... 95 % (non-condensing)Ambient pressure Atmospheric pressureThe space between sensor surface and target must have an unchanging dielectric constant.GeneralSetup, Connection OptionsPower supply and signal output are provided via plug con-nectors on the front of the controller.S C A C x /4LAN cableRJ-45 connectorsControllerSensor PS 2020P C 6200-3/4Ammeter/VoltmeterGeneralGround Connection, GroundingEnsure sufficient grounding of the target, for example, by connecting it to the sensor or the power supply ground.If necessary, use the grounding connection on the housing cover. The grounding connection is included in the conversion kit supplied in the scope of delivery.Non-contact target groundingGrounding the target is very difficult or even impossible in many applications. Unlike common systems, the target does not need to be grounded if two DL62xx demodulators are synchronized.The schematic diagram below shows two synchronized capaNCDT sensors that measure against a roll. Since the sen-sors are connected by MICRO-EPSILON’s unique synchronization technology, grounding of the target is not required in most cases.sync.Position and imbalance measurement with two measure-Grounding connection on the housing cover (1)ment systemsTarget grounding is not required with synchronized capaNCDT sensors by Micro-Epsilon.General SynchronizationAll sensors are synchronized with each other within one controller. Several capaNCDT 6230 and 6238 series control-lers can be operated simultaneously as a multi-channel system. Synchronizing the controllers prevents interference of the sensors with each other.controller, 5-pin femaleconnectorPlug the SC6000-x synchronization cable into theSYNC OUT port (output) on Controller 1.Plug the connector of the SC6000-x into the SYNCIN port (input) on Controller 2.i Automatic synchronization, each controller can bethe master.Synchronization of a second DT6230 controllerAssemblyAssemblyNo sharp or heavy objects should be allowed to affect the cable sheath.iA damaged cable cannot be repaired. Tension on the cable is not permitted!SensorFlushinstallation ProtrudinginstallationRecessedinstallation, not for sensors in the CSE seriesDuring installation, take care that thesensor front face is not scratched.Clamping Around Circumference, Cylindrical SensorsClamping around circumference, assembly with clamp-ing collet-High reliability-Flat clamping across cylindrical housing-Recommended assembly for e.g., machines, produc-tion facilities, etc.Radial Spot Clamping with Grub Screw, CylindricalSensorsRadial spot clamping with grub screw (1)-Simple mounting option-Recommended assembly only for installation loca-tionsthat are free of impact or vibration-The grub screw must be made of plastic Do not use metal grub screws! >Risk of damage to the sensorFlat SensorsScrewed connection from top Screwed connection from bottomAssembly ControllerDimensional drawing of base module and demodulatormoduleDimensional drawing of housing coverAssemblyInserting Demodulator ModuleLoosen the sleeve nuts (4b) on the right side of the controller, remove the right housing cover (3).Pull out a sleeve nut (4a), including the threaded rod (1).Replace the threaded rod (1) with the next-longest threaded rod in the conversion kit supplied. Push the new threaded rod, including sleeve nut (4a), through the modules.Replace the remaining 3 threaded rods in the same manner.Attach the additional demodulator module.Number ofdemodulator modulesLength ofthreaded rod M4159 mm284 mm3109 mm4134 mm Controller mechanical partsi Only touch the demodulator modules on thehousing, not on the electronics. This avoids elec-trostatic discharges onto the electronics.AssemblyConnect both flat strip connections (5) of the previ-ous demodulator module to the new demodulatormodule (6).556Wiring of demodulator modules5 Wiring of previous demodulator module6 Wiring of next demodulator module Attach the right housing cover (3).Screw the sleeve nuts (4b) onto the threaded rods on the right side of the controller and tighten the sleeve nuts.Wiring to the previous demodulator module (5) can be released by using the supplied unplugging tool – see Accessories – as follows:1. Push the unplugging tool with the cutout side-ways onto the plug (5).2. Remove the plug with a lever movement.3. Release the other side of the plug in the same manner.1.2.3.Use of the unplugging tool for wiring of the demodulator elementsCommissioningCommissioning1) LP Filter can only be switched via Ethernet.CommissioningPin Assignment of Analog OutputPin Wire colorSCACx/4Description1Brown VOUT, (Load min. 10 kOhm)2Yellow IOUT, (Load max. 500 Ohm)3Gray GND, analog ground4White GND, analog groundShieldAnalog grounds are connected internally. SCA-Cx/4 is a 4-wire output cable that is 3 m long. Itis supplied as an optional accessory.View: soldering pin side,4-pin male cable connectorSignal output on controller,4-pin portCommissioningEthernet/EtherCAT Switching DT6230Switch for changing between Ethernet and EtherCAT You can change between Ethernet and EtherCAT by using the hardware switch on the DT6230 resp. DT6238 base module or in the software.If the switch is in the EN (Ethernet) position, the Ethernet interface is always active irrespective of the software setting. If the switch is in the EN/EC(Ethernet/EtherCAT) position, the interface set by the software is active. Any change to the interface only takes effect after restarting the controller.Commissioning, IP AddressCommissioning, IP AddressThe controller is shipped with the factory-set IP address 169.254.168.150.You can query the IP addresses of the controllers that are connected to a PC or network by using the sensorTOOL program. This program is available online at https:// /download/software/ sensorTOOL.exe.Start the sensorTOOL program andclick the button.Select the correct controller from the list.Click the Open Website button to con-nect the sensor to your default browser. OR: If DHCP is active and the DHCP server is linked to the DNS server, access is also pos-sible by using e.g., DT6200_SN01234567 (where “01234567” is the serial number of your controller).Start a web browser on your PC. EnterDT6200_Serial_number in the ad-dress bar of your browser.The controller supports UPnP. If you have an operating system where the UPnP service is enabled, e.g. by default in Windows 7, the controller is automatically listed in Explorer under network devic-es and can be accessed from there, e.g. if you have forgotten its IPaddress.First interactive web page after calling the IP addressAdditional help functions (e.g. Settings) are available in the top navigation bar. All settings on the web page are implemented in the controller immediately.Parallel operation with web browser and Telnet commands is possi-ble; the last setting applies.The appearance of the web pages can change depending on the functions and the peripherals. Each page contains parameter de-scriptions and thus tips for configuring the controller.Commissioning, IP AddressChannel Information, Measuring RangeThe measuring ranges of the connected sensors must be specified manually. After replacing a sensor, don’t forget to specify its new measuring range.Go to the Settings > Channel n >Channel information menu.Specify the measuring range of the sensor.Value range between 0 and 1000000 µm Value range between 0 and 1000000 µm Math FunctionThis function permits scaling of a measuring channel and mathematical linking of individual measuring chan-nels.Formula: Data channel = Offset + Factor Measuring channel 1 + Factor Measuring channel 2 + Factor Mea-suring channel 3 + Factor Measuring channel 4.Data channel = digital valuesMeasuring channel = analog value of a demodulator moduleGo to the Settings > Channel n >Math function menu.Specify the values for Offset and Factor.Value range for Offset: max. ±8 times MRValue range for Factor: measuring channel between -9.9 and +9.9Distance MeasurementsDistance MeasurementsSwitch to the Measurement menu. Click the Start measuringbutton.Positioning the T argetPosition the target within the sensor mea-suring range.SMR Start of measuring range MMR Mid of measuring range EMR End of measuring rangeOperation and MaintenanceOperation and MaintenancePlease note for operation and maintenance:Ensure that the sensor surface is always clean.Before cleaning, turn off the supply voltage.Clean with a damp cloth and then rub the sensorsurface dry.If the target has been changed or operating periods are very long, minor losses in operating quality are possible. You can correct these long-term errors by recalibrating.Disconnect the power supply before touching thesensor surface.>Static discharge, danger of injuryIf the cause of a fault cannot be clearly determined, al-ways send the complete measurement system. In case of a defect in the controller, the sensor or the sensor cable, send the affected parts for repair or exchange. MICRO-EPSILON MESSTECHNIKGmbH & Co. KGKoenigbacher Str. 1594496 Ortenburg / GermanyTel. +49 (0) 8542 / 168-0 / Fax +49 (0) 8542 / 168-90**********************/ DisclaimerAll components of the device have been checked and tested for functionality in the factory. However, should any defects occur despite careful quality control, these shall be reported immediately to MICRO-EPSILON or to your distributor / retailer.MICRO-EPSILON undertakes no liability whatsoever for damage, loss or costs caused by or related in any way to the product, in particular consequential damage,e.g., due to-non-observance of these instructions/this manual,-improper use or improper handling (in particular due to improper installation, commissioning, operation and maintenance) of the product,-repairs or modifications by third parties,-the use of force or other handling by unqualified persons.This limitation of liability also applies to defects resulting from normal wear and tear (e.g., to wearing parts) and in the event of non-compliance with the specified mainte-nance intervals (if applicable).MICRO-EPSILON is exclusively responsible for repairs. It is not permitted to make unauthorized structural and / or technical modifications or alterations to the product. In the interest of further development, MICRO-EPSILON reserves the right to modify the design.In addition, the General Terms of Business of MI-CRO-EPSILON shall apply, which can be accessed un-der Legal details | Micro-Epsilon https:///impressum/.For translations into other languages, the German ver-sion shall prevail.MICRO-EPSILON MESSTECHNIK GmbH & Co. KGKoenigbacher Str. 15 · 94496 Ortenburg / GermanyT el. +49 (0) 8542 / 168-0 · Fax +49 (0) 8542 / 168-90X9691298-B012033DT a **********************·Your local contact: /contact/worldwide/。
模具设计与制造专业英语第2版
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FullProf 详细使用教程
New facilities concerning symmetry in FullProf
⇒ The symmetry used within FullProf is totally based in the Crystallographic Fortran 95 Modules Library (CrysFML) (Tuesday 26 ⇒ FA3-MS5, Meeting Room 11B) ⇒ These modules provide better crystallographic information to the user of the program. In particular automatic calculation of the multiplicity of each site is now performed after reading the atoms as well as the calculation of the appropriate coefficients for automatic quantitative analysis of mixture of phases. ⇒ New output files with full information of crystallographic symmetry are produced (extension: sym)
Durban, August 24, 2003
ECM-21 Software Workshop
Last minute changes in FullProf Documented in “fp2k.inf”
IEC-61854架空线.隔离层的要求和检验
NORMEINTERNATIONALECEI IEC INTERNATIONALSTANDARD 61854Première éditionFirst edition1998-09Lignes aériennes –Exigences et essais applicables aux entretoisesOverhead lines –Requirements and tests for spacersCommission Electrotechnique InternationaleInternational Electrotechnical Commission Pour prix, voir catalogue en vigueurFor price, see current catalogue© IEC 1998 Droits de reproduction réservés Copyright - all rights reservedAucune partie de cette publication ne peut être reproduite niutilisée sous quelque forme que ce soit et par aucunprocédé, électronique ou mécanique, y compris la photo-copie et les microfilms, sans l'accord écrit de l'éditeur.No part of this publication may be reproduced or utilized in any form or by any means, electronic or mechanical,including photocopying and microfilm, without permission in writing from the publisher.International Electrotechnical Commission 3, rue de Varembé Geneva, SwitzerlandTelefax: +41 22 919 0300e-mail: inmail@iec.ch IEC web site http: //www.iec.chCODE PRIX PRICE CODE X– 2 –61854 © CEI:1998SOMMAIREPages AVANT-PROPOS (6)Articles1Domaine d'application (8)2Références normatives (8)3Définitions (12)4Exigences générales (12)4.1Conception (12)4.2Matériaux (14)4.2.1Généralités (14)4.2.2Matériaux non métalliques (14)4.3Masse, dimensions et tolérances (14)4.4Protection contre la corrosion (14)4.5Aspect et finition de fabrication (14)4.6Marquage (14)4.7Consignes d'installation (14)5Assurance de la qualité (16)6Classification des essais (16)6.1Essais de type (16)6.1.1Généralités (16)6.1.2Application (16)6.2Essais sur échantillon (16)6.2.1Généralités (16)6.2.2Application (16)6.2.3Echantillonnage et critères de réception (18)6.3Essais individuels de série (18)6.3.1Généralités (18)6.3.2Application et critères de réception (18)6.4Tableau des essais à effectuer (18)7Méthodes d'essai (22)7.1Contrôle visuel (22)7.2Vérification des dimensions, des matériaux et de la masse (22)7.3Essai de protection contre la corrosion (22)7.3.1Composants revêtus par galvanisation à chaud (autres queles fils d'acier galvanisés toronnés) (22)7.3.2Produits en fer protégés contre la corrosion par des méthodes autresque la galvanisation à chaud (24)7.3.3Fils d'acier galvanisé toronnés (24)7.3.4Corrosion causée par des composants non métalliques (24)7.4Essais non destructifs (24)61854 © IEC:1998– 3 –CONTENTSPage FOREWORD (7)Clause1Scope (9)2Normative references (9)3Definitions (13)4General requirements (13)4.1Design (13)4.2Materials (15)4.2.1General (15)4.2.2Non-metallic materials (15)4.3Mass, dimensions and tolerances (15)4.4Protection against corrosion (15)4.5Manufacturing appearance and finish (15)4.6Marking (15)4.7Installation instructions (15)5Quality assurance (17)6Classification of tests (17)6.1Type tests (17)6.1.1General (17)6.1.2Application (17)6.2Sample tests (17)6.2.1General (17)6.2.2Application (17)6.2.3Sampling and acceptance criteria (19)6.3Routine tests (19)6.3.1General (19)6.3.2Application and acceptance criteria (19)6.4Table of tests to be applied (19)7Test methods (23)7.1Visual examination (23)7.2Verification of dimensions, materials and mass (23)7.3Corrosion protection test (23)7.3.1Hot dip galvanized components (other than stranded galvanizedsteel wires) (23)7.3.2Ferrous components protected from corrosion by methods other thanhot dip galvanizing (25)7.3.3Stranded galvanized steel wires (25)7.3.4Corrosion caused by non-metallic components (25)7.4Non-destructive tests (25)– 4 –61854 © CEI:1998 Articles Pages7.5Essais mécaniques (26)7.5.1Essais de glissement des pinces (26)7.5.1.1Essai de glissement longitudinal (26)7.5.1.2Essai de glissement en torsion (28)7.5.2Essai de boulon fusible (28)7.5.3Essai de serrage des boulons de pince (30)7.5.4Essais de courant de court-circuit simulé et essais de compressionet de traction (30)7.5.4.1Essai de courant de court-circuit simulé (30)7.5.4.2Essai de compression et de traction (32)7.5.5Caractérisation des propriétés élastiques et d'amortissement (32)7.5.6Essais de flexibilité (38)7.5.7Essais de fatigue (38)7.5.7.1Généralités (38)7.5.7.2Oscillation de sous-portée (40)7.5.7.3Vibrations éoliennes (40)7.6Essais de caractérisation des élastomères (42)7.6.1Généralités (42)7.6.2Essais (42)7.6.3Essai de résistance à l'ozone (46)7.7Essais électriques (46)7.7.1Essais d'effet couronne et de tension de perturbations radioélectriques..467.7.2Essai de résistance électrique (46)7.8Vérification du comportement vibratoire du système faisceau/entretoise (48)Annexe A (normative) Informations techniques minimales à convenirentre acheteur et fournisseur (64)Annexe B (informative) Forces de compression dans l'essai de courantde court-circuit simulé (66)Annexe C (informative) Caractérisation des propriétés élastiques et d'amortissementMéthode de détermination de la rigidité et de l'amortissement (70)Annexe D (informative) Contrôle du comportement vibratoire du systèmefaisceau/entretoise (74)Bibliographie (80)Figures (50)Tableau 1 – Essais sur les entretoises (20)Tableau 2 – Essais sur les élastomères (44)61854 © IEC:1998– 5 –Clause Page7.5Mechanical tests (27)7.5.1Clamp slip tests (27)7.5.1.1Longitudinal slip test (27)7.5.1.2Torsional slip test (29)7.5.2Breakaway bolt test (29)7.5.3Clamp bolt tightening test (31)7.5.4Simulated short-circuit current test and compression and tension tests (31)7.5.4.1Simulated short-circuit current test (31)7.5.4.2Compression and tension test (33)7.5.5Characterisation of the elastic and damping properties (33)7.5.6Flexibility tests (39)7.5.7Fatigue tests (39)7.5.7.1General (39)7.5.7.2Subspan oscillation (41)7.5.7.3Aeolian vibration (41)7.6Tests to characterise elastomers (43)7.6.1General (43)7.6.2Tests (43)7.6.3Ozone resistance test (47)7.7Electrical tests (47)7.7.1Corona and radio interference voltage (RIV) tests (47)7.7.2Electrical resistance test (47)7.8Verification of vibration behaviour of the bundle-spacer system (49)Annex A (normative) Minimum technical details to be agreed betweenpurchaser and supplier (65)Annex B (informative) Compressive forces in the simulated short-circuit current test (67)Annex C (informative) Characterisation of the elastic and damping propertiesStiffness-Damping Method (71)Annex D (informative) Verification of vibration behaviour of the bundle/spacer system (75)Bibliography (81)Figures (51)Table 1 – Tests on spacers (21)Table 2 – Tests on elastomers (45)– 6 –61854 © CEI:1998 COMMISSION ÉLECTROTECHNIQUE INTERNATIONALE––––––––––LIGNES AÉRIENNES –EXIGENCES ET ESSAIS APPLICABLES AUX ENTRETOISESAVANT-PROPOS1)La CEI (Commission Electrotechnique Internationale) est une organisation mondiale de normalisation composéede l'ensemble des comités électrotechniques nationaux (Comités nationaux de la CEI). La CEI a pour objet de favoriser la coopération internationale pour toutes les questions de normalisation dans les domaines de l'électricité et de l'électronique. A cet effet, la CEI, entre autres activités, publie des Normes internationales.Leur élaboration est confiée à des comités d'études, aux travaux desquels tout Comité national intéressé par le sujet traité peut participer. Les organisations internationales, gouvernementales et non gouvernementales, en liaison avec la CEI, participent également aux travaux. La CEI collabore étroitement avec l'Organisation Internationale de Normalisation (ISO), selon des conditions fixées par accord entre les deux organisations.2)Les décisions ou accords officiels de la CEI concernant les questions techniques représentent, dans la mesuredu possible un accord international sur les sujets étudiés, étant donné que les Comités nationaux intéressés sont représentés dans chaque comité d’études.3)Les documents produits se présentent sous la forme de recommandations internationales. Ils sont publiéscomme normes, rapports techniques ou guides et agréés comme tels par les Comités nationaux.4)Dans le but d'encourager l'unification internationale, les Comités nationaux de la CEI s'engagent à appliquer defaçon transparente, dans toute la mesure possible, les Normes internationales de la CEI dans leurs normes nationales et régionales. Toute divergence entre la norme de la CEI et la norme nationale ou régionale correspondante doit être indiquée en termes clairs dans cette dernière.5)La CEI n’a fixé aucune procédure concernant le marquage comme indication d’approbation et sa responsabilitén’est pas engagée quand un matériel est déclaré conforme à l’une de ses normes.6) L’attention est attirée sur le fait que certains des éléments de la présente Norme internationale peuvent fairel’objet de droits de propriété intellectuelle ou de droits analogues. La CEI ne saurait être tenue pour responsable de ne pas avoir identifié de tels droits de propriété et de ne pas avoir signalé leur existence.La Norme internationale CEI 61854 a été établie par le comité d'études 11 de la CEI: Lignes aériennes.Le texte de cette norme est issu des documents suivants:FDIS Rapport de vote11/141/FDIS11/143/RVDLe rapport de vote indiqué dans le tableau ci-dessus donne toute information sur le vote ayant abouti à l'approbation de cette norme.L’annexe A fait partie intégrante de cette norme.Les annexes B, C et D sont données uniquement à titre d’information.61854 © IEC:1998– 7 –INTERNATIONAL ELECTROTECHNICAL COMMISSION––––––––––OVERHEAD LINES –REQUIREMENTS AND TESTS FOR SPACERSFOREWORD1)The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprisingall national electrotechnical committees (IEC National Committees). The object of the IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, the IEC publishes International Standards. Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. The IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.2)The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, aninternational consensus of opinion on the relevant subjects since each technical committee has representation from all interested National Committees.3)The documents produced have the form of recommendations for international use and are published in the formof standards, technical reports or guides and they are accepted by the National Committees in that sense.4)In order to promote international unification, IEC National Committees undertake to apply IEC InternationalStandards transparently to the maximum extent possible in their national and regional standards. Any divergence between the IEC Standard and the corresponding national or regional standard shall be clearly indicated in the latter.5)The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for anyequipment declared to be in conformity with one of its standards.6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subjectof patent rights. The IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 61854 has been prepared by IEC technical committee 11: Overhead lines.The text of this standard is based on the following documents:FDIS Report on voting11/141/FDIS11/143/RVDFull information on the voting for the approval of this standard can be found in the report on voting indicated in the above table.Annex A forms an integral part of this standard.Annexes B, C and D are for information only.– 8 –61854 © CEI:1998LIGNES AÉRIENNES –EXIGENCES ET ESSAIS APPLICABLES AUX ENTRETOISES1 Domaine d'applicationLa présente Norme internationale s'applique aux entretoises destinées aux faisceaux de conducteurs de lignes aériennes. Elle recouvre les entretoises rigides, les entretoises flexibles et les entretoises amortissantes.Elle ne s'applique pas aux espaceurs, aux écarteurs à anneaux et aux entretoises de mise à la terre.NOTE – La présente norme est applicable aux pratiques de conception de lignes et aux entretoises les plus couramment utilisées au moment de sa rédaction. Il peut exister d'autres entretoises auxquelles les essais spécifiques décrits dans la présente norme ne s'appliquent pas.Dans de nombreux cas, les procédures d'essai et les valeurs d'essai sont convenues entre l'acheteur et le fournisseur et sont énoncées dans le contrat d'approvisionnement. L'acheteur est le mieux à même d'évaluer les conditions de service prévues, qu'il convient d'utiliser comme base à la définition de la sévérité des essais.La liste des informations techniques minimales à convenir entre acheteur et fournisseur est fournie en annexe A.2 Références normativesLes documents normatifs suivants contiennent des dispositions qui, par suite de la référence qui y est faite, constituent des dispositions valables pour la présente Norme internationale. Au moment de la publication, les éditions indiquées étaient en vigueur. Tout document normatif est sujet à révision et les parties prenantes aux accords fondés sur la présente Norme internationale sont invitées à rechercher la possibilité d'appliquer les éditions les plus récentes des documents normatifs indiqués ci-après. Les membres de la CEI et de l'ISO possèdent le registre des Normes internationales en vigueur.CEI 60050(466):1990, Vocabulaire Electrotechnique International (VEI) – Chapitre 466: Lignes aériennesCEI 61284:1997, Lignes aériennes – Exigences et essais pour le matériel d'équipementCEI 60888:1987, Fils en acier zingué pour conducteurs câblésISO 34-1:1994, Caoutchouc vulcanisé ou thermoplastique – Détermination de la résistance au déchirement – Partie 1: Eprouvettes pantalon, angulaire et croissantISO 34-2:1996, Caoutchouc vulcanisé ou thermoplastique – Détermination de la résistance au déchirement – Partie 2: Petites éprouvettes (éprouvettes de Delft)ISO 37:1994, Caoutchouc vulcanisé ou thermoplastique – Détermination des caractéristiques de contrainte-déformation en traction61854 © IEC:1998– 9 –OVERHEAD LINES –REQUIREMENTS AND TESTS FOR SPACERS1 ScopeThis International Standard applies to spacers for conductor bundles of overhead lines. It covers rigid spacers, flexible spacers and spacer dampers.It does not apply to interphase spacers, hoop spacers and bonding spacers.NOTE – This standard is written to cover the line design practices and spacers most commonly used at the time of writing. There may be other spacers available for which the specific tests reported in this standard may not be applicable.In many cases, test procedures and test values are left to agreement between purchaser and supplier and are stated in the procurement contract. The purchaser is best able to evaluate the intended service conditions, which should be the basis for establishing the test severity.In annex A, the minimum technical details to be agreed between purchaser and supplier are listed.2 Normative referencesThe following normative documents contain provisions which, through reference in this text, constitute provisions of this International Standard. At the time of publication of this standard, the editions indicated were valid. All normative documents are subject to revision, and parties to agreements based on this International Standard are encouraged to investigate the possibility of applying the most recent editions of the normative documents indicated below. Members of IEC and ISO maintain registers of currently valid International Standards.IEC 60050(466):1990, International Electrotechnical vocabulary (IEV) – Chapter 466: Overhead linesIEC 61284:1997, Overhead lines – Requirements and tests for fittingsIEC 60888:1987, Zinc-coated steel wires for stranded conductorsISO 34-1:1994, Rubber, vulcanized or thermoplastic – Determination of tear strength – Part 1: Trouser, angle and crescent test piecesISO 34-2:1996, Rubber, vulcanized or thermoplastic – Determination of tear strength – Part 2: Small (Delft) test piecesISO 37:1994, Rubber, vulcanized or thermoplastic – Determination of tensile stress-strain properties– 10 –61854 © CEI:1998 ISO 188:1982, Caoutchouc vulcanisé – Essais de résistance au vieillissement accéléré ou à la chaleurISO 812:1991, Caoutchouc vulcanisé – Détermination de la fragilité à basse températureISO 815:1991, Caoutchouc vulcanisé ou thermoplastique – Détermination de la déformation rémanente après compression aux températures ambiantes, élevées ou bassesISO 868:1985, Plastiques et ébonite – Détermination de la dureté par pénétration au moyen d'un duromètre (dureté Shore)ISO 1183:1987, Plastiques – Méthodes pour déterminer la masse volumique et la densitérelative des plastiques non alvéolairesISO 1431-1:1989, Caoutchouc vulcanisé ou thermoplastique – Résistance au craquelage par l'ozone – Partie 1: Essai sous allongement statiqueISO 1461,— Revêtements de galvanisation à chaud sur produits finis ferreux – Spécifications1) ISO 1817:1985, Caoutchouc vulcanisé – Détermination de l'action des liquidesISO 2781:1988, Caoutchouc vulcanisé – Détermination de la masse volumiqueISO 2859-1:1989, Règles d'échantillonnage pour les contrôles par attributs – Partie 1: Plans d'échantillonnage pour les contrôles lot par lot, indexés d'après le niveau de qualité acceptable (NQA)ISO 2859-2:1985, Règles d'échantillonnage pour les contrôles par attributs – Partie 2: Plans d'échantillonnage pour les contrôles de lots isolés, indexés d'après la qualité limite (QL)ISO 2921:1982, Caoutchouc vulcanisé – Détermination des caractéristiques à basse température – Méthode température-retrait (essai TR)ISO 3417:1991, Caoutchouc – Détermination des caractéristiques de vulcanisation à l'aide du rhéomètre à disque oscillantISO 3951:1989, Règles et tables d'échantillonnage pour les contrôles par mesures des pourcentages de non conformesISO 4649:1985, Caoutchouc – Détermination de la résistance à l'abrasion à l'aide d'un dispositif à tambour tournantISO 4662:1986, Caoutchouc – Détermination de la résilience de rebondissement des vulcanisats––––––––––1) A publierThis is a preview - click here to buy the full publication61854 © IEC:1998– 11 –ISO 188:1982, Rubber, vulcanized – Accelerated ageing or heat-resistance testsISO 812:1991, Rubber, vulcanized – Determination of low temperature brittlenessISO 815:1991, Rubber, vulcanized or thermoplastic – Determination of compression set at ambient, elevated or low temperaturesISO 868:1985, Plastics and ebonite – Determination of indentation hardness by means of a durometer (Shore hardness)ISO 1183:1987, Plastics – Methods for determining the density and relative density of non-cellular plasticsISO 1431-1:1989, Rubber, vulcanized or thermoplastic – Resistance to ozone cracking –Part 1: static strain testISO 1461, — Hot dip galvanized coatings on fabricated ferrous products – Specifications1)ISO 1817:1985, Rubber, vulcanized – Determination of the effect of liquidsISO 2781:1988, Rubber, vulcanized – Determination of densityISO 2859-1:1989, Sampling procedures for inspection by attributes – Part 1: Sampling plans indexed by acceptable quality level (AQL) for lot-by-lot inspectionISO 2859-2:1985, Sampling procedures for inspection by attributes – Part 2: Sampling plans indexed by limiting quality level (LQ) for isolated lot inspectionISO 2921:1982, Rubber, vulcanized – Determination of low temperature characteristics –Temperature-retraction procedure (TR test)ISO 3417:1991, Rubber – Measurement of vulcanization characteristics with the oscillating disc curemeterISO 3951:1989, Sampling procedures and charts for inspection by variables for percent nonconformingISO 4649:1985, Rubber – Determination of abrasion resistance using a rotating cylindrical drum deviceISO 4662:1986, Rubber – Determination of rebound resilience of vulcanizates–––––––––1) To be published.。
ambertools windows 编译
ambertools windows 编译
Energy Refinement) 软件包的一部分，用于分子动力学模拟。
为了在Windows 上编译AmberTools，你需要遵循一些步骤。
但是，需要注意的是，AMBER 主要是为UNIX/Linux 系统设计的，因此在Windows 上的支持可能是有限的。
以下是在Windows 上编译AmberTools的大致步骤：1.获取源代码：首先，你需要从AMBER 的官方网站或
相关资源下载AmberTools的源代码。
2.安装编译工具：为了在Windows 上编译，你可能需
要安装如Cygwin 或MinGW 这样的工具，它们为
Windows 提供了类似UNIX 的环境和编译工具。
确
保你已经安装了适当的编译器和工具链。
3.配置：使用配置文件或命令行选项指定编译选项和依
赖项。
这可能包括指定编译器、库的位置以及其他选
项。
4.编译：在命令行中运行编译命令。
这通常是make命
令，但在Windows 上，你可能需要使用Cygwin 或
MinGW 提供的make工具或类似工具。
5.安装：编译完成后，你可能需要运行安装命令将编译
好的程序安装到指定位置。
6.测试：完成安装后，运行一些测试以确
保AmberTools正确工作。
请注意，这些步骤可能会因AmberTools的版本和你的具体环境而有所不同。
因此，强烈建议查阅AmberTools的官方文档或相关资源以获取详细的、针对你当前版本的编译和安装指南。
如果你遇到任何问题或困难，AMBER 社区论坛或邮件列表是寻求帮助的好地方。
STM32MP1 系列密钥生成器软件说明说明书
引言STM32CubeProgrammer(STM32CubeProg )已经内置STM32MP1系列密钥生成器软件（本文档中称其为STM32MP1-KeyGen)。
STM32MP1-KeyGen 可生成二进制映像签名所需的ECC 密钥对。
STM32签名工具在签名时会使用已生成的密钥。
STM32MP1-KeyGen 可生成公钥文件、私钥文件和哈希公钥文件。
公钥文件包含已生成的PEM 格式ECC 公钥。
私钥文件包含PEM 格式加密ECC 私钥。
加密操作可使用aes 128 cbc 或aes 256 cbc 密码算法。
利用--prvkey-enc 选项可选择密码算法。
哈希公钥文件包含二进制格式公钥SHA-256哈希值。
该SHA-256哈希值是基于公钥计算得出的、无任何编码格式的数值。
公钥的第一个字节仅用于指示该公钥的格式是压缩格式还是非压缩格式。
由于仅支持非压缩格式，因此可删除该字节。
STM32MP1系列密钥生成器软件说明UM2542User manual安装STM32MP1-KeyGen 1安装STM32MP1-KeyGen此工具随STM32CubeProgrammer软件包（STM32CubeProg）一同安装。
有关配置规程的详细信息，请参见用户手册STM32CubeProgrammer软件说明中的第1.2章（UM2237）。
此软件适用于基于Arm®的STM32MP1系列MPU。
提示Arm是Arm Limited（或其子公司）在美国和/或其他地区的注册商标。
STM32MP1-KeyGen命令行接口2STM32MP1-KeyGen命令行接口以下各节介绍如何由命令行来使用STM32MP1-KeyGen。
2.1指令以下列出了可供使用的命令：•--private-key (-prvk)–说明：私钥文件路径（扩展名.pem）–语法：-prvk <private_key_file_path>–示例：-prvk ../privateKey.pem•--public-key (-pubk)–说明：公钥文件路径（扩展名.pem）–语法：-pubk <public_key_file_path>–示例：-pubk C:\publicKey.pem•--public-key-hash (-hash)–说明：哈希映像文件路径（扩展名.bin）–语法：-hash <hash_file_path>•--absolute-path (-abs)–说明：输出文件的绝对路径–语法：-abs <absolue_path_folder_path>–示例：-abs C:\KeyFolder\•--password (-pwd)–说明：私钥密码（此密码必须至少包含四个字符）–示例：-pwd azerty•--prvkey-enc (-pe)–说明：加密私钥算法（aes128/aes256）（aes256算法为默认算法）–语法：-pe aes128•--ecc-algo (-ecc)–说明：ECC密钥生成算法（prime256v1/brainpoolP256t1）（prime256v1为默认算法）–语法：-ecc prime256v1•--help (-h and -?)–说明：显示帮助。
PROEprotoolmaker
NuTool - 针对NuMicro微控制器的PinConfigure设置手册说明书
NuTool – PinConfigure Revision HistoryNuTool – PinConfigureRevision HistoryThe information described in this document is the exclusive intellectual property ofNuvoton Technology Corporation and shall not be reproduced without permission from Nuvoton.Nuvoton is providing this document only for reference purposes of NuMicro ® micro controller based systemdesign. Nuvoton assumes no responsibility for errors or omissions.All data and specifications are subject to change without notice.For additional information or questions, please contact: Nuvoton Technology Corporation .NuTool – PinConfigure Revision History TABLE OF CONTENTS1REVISION HISTORY (3)2SUPPORTED MIRCO CONTROLLER (6)3RESOURCES (10)NuTool – PinConfigure Revision History1 REVISION HISTORY Version Release Date Description1.24 2022/3/30 • Added supported micro controller:– NuMicro M7 Family: KM1M7BF Series.– NuMicro M4 Family: M460 Series.• Added supported micro processor:– NuMicro A35 Family: MA35D1 Series.1.23 2021/6/30 • Added supported micro controller:– NuMicro M7 Family: KM1M7AF Series.– NuMicro M23 Family: M256D and M258G Series.1.22 2021/3/19 • Added supported micro controller:– NuMicro M0 Family: M031G Series.– NuMicro M23 Family: NUC1262 Series.1.21 2020/11/20 • Added supported micro controller:– NuMicro M0 Family: M071 Series.– NuMicro M4 Family: M471 Series.– NuMicro M23 Family: M253, M258 and M2354 Series.1.20 2020/4/30 • Added supported micro controller:– NuMicro M0 Family: M0A21 and M030G Series.1.19 2020/3/6 • Added supported micro controller:– NuMicro M0 Family: NUC029MDE.– NuMicro M4 Family: M487KMCAN.– NuMicro 8051 1T Family: ML56 Series.1.18 2020/1/31 • Added supported micro controller:– NuMicro M0 Family: M031BT series.– NuMicro M4 Family: M479 series.1.17 2019/11/1 • Added supported micro controller:– NuMicro M0 Family: NUC029ZAN.• Updated supported micro controller:– NuMicro M0 Family: M031 Series.– NuMicro M4 Family: M480 Series– NuMicro 8051 1T Family: MS51 Series1.16 2019/9/6 • Added supported micro controller:– NuMicro M0 Family: M031(G/I/Keyboard/Mouse) and NUC1311 Series.– NuMicro M23 Family: M2353SIAAE Series.NuTool – PinConfigure Revision History–NuMicro 8051 1T Family: MS51(8K/32K) Series.•Updated supported micro controller:–NuMicro M0 Family: NANO100BN Series.–NuMicro M4 Family: M480LD Series1.15 2019/4/29•Added supported micro controller:–NuMicro M0 Family: NUC1261, M05641, NUC029xDE,NUC029xEE, NUC029xGE and M031 Series.–NuMicro M23 Family: M261 Series.–NuMicro M4 Family: M4521 Series.–NuMicro 8051 1T Family: MS51 Series.1.14 2018/12/28•Added supported micro controller:–NuMicro M0 Family: NUC2201 Series.–NuMicro M23 Family: M251 Series.–NuMicro 8051 1T Family: ML51 Series.•Updated supported micro controller:–NuMicro M0 Family: NANO103 Series.1.13 2018/7/29•Added supported micro controller:–NuMicro M0 Family: Mini57, NDA102 and NM1120 Series.1.12 2018/6/29•Updated supported micro controller:–NuMicro M23 Family: M2351 Series.–NuMicro M4 Family: M480 Series.1.11 2017/10/20•Added supported micro controller:–NuMicro M23 Family: M2351 Series.•Supported the adjustment of conflicts.1.10 2017/8/1•Added supported micro controller:–NuMicro M0 Family: NUC121, NUC125, NUC126 and M0564Series.–NuMicro M4 Family: M480 Series.1.09 2016/7/22 •Supported NuCAD for Protel library.1.08 2016/2/29•Added supported micro controller:–NuMicro M0 Family: NANO103 Series.1.07 2015/12/1 •Supported the Generate Report of Pin Description feature.1.06 2015/11/1 •Supported the NuCAD feature.1.05 2015/7/1•Added supported micro controller:–NuMicro M0 Family: Mini58 and M0519 Series.•Supported the Tooltip feature.NuTool – PinConfigure Revision History 1.04 2014/11/28 • Supported IE11.• Added supported micro controller:– NuMicro M0 Family: NUC100, NUC200, NUC029, M051, M0518, Mini51, Nano100 and NM1500 Series.– NuMicro M4 Family: NUC505 Series.1.03 2014/1/24 • Added supported micro controller:– NuMicro M4 Family: M451 Series.• Enhanced stability.1.02 2014/1/3 • Supported IE10.• Improved performance and GUI.• Supported the Search feature.• Supported the Print Report feature.1.01 2013/11/8 • Supported IE9.• Supported Simplified Chinese and Traditional Chinese. 1.00 2013/10/18 • Release primary version.NuTool – PinConfigure Revision History 2SUPPORTED MIRCO CONTROLLERProduct Line Series Part NumberNuMicro®8051 FamilyMS51MS51BA9AE, MS51DA9AE, MS51EB0AE, MS51EC0AE, MS51FB9AE, MS51FC0AE,MS51PC0AE, MS51TC0AE, MS51XB9AE, MS51XB9BE, MS51XC0BEML51ML51BB9AE, ML51DB9AE, ML51EB9AE, ML51EC0AE, ML51FB9AE, ML51LD1AE,ML51OB9AE, ML51PB9AE, ML51PC0AE, ML51SD1AE, ML51TB9AE, ML51TC0AE,ML51TD1AE, ML51UB9AE, ML51UC0AE, ML51XB9AEML56ML54LD1AE, ML54MD1AE, ML54SD1AE, ML56LD1AE, ML56MD1AE,ML56SD1AENuMicro®M0 FamilyM0A21M0A21EB1AC, M0A21EC1AC, M0A21OB1AC, M0A21OC1AC, M0A23EC1AC,M0A23OC1ACM030GM030GGC0AE, M030GGC1AE, M030GGD1AE, M030GTC0AE, M030GTC1AE,M030GTD1AE, M031GGC1AE, M031GGC2AE, M031GGD2AE, M031GTC1AE,M031GTC2AE, M031GTD2AEM031M030FD2AE, M030LD2AE, M030TD2AE, M031BTYD2AN, M031BTYE3AN,M031EB0AE, M031EC1AE, M031FB0AE, M031FC1AE, M031KG6AE,M031KG8AE, M031KIAAE, M031LC2AE, M031LD2AE, M031LE3AE, M031LG6AE,M031LG8AE, M031SC2AE, M031SD2AE, M031SE3AE, M031SG6AE, M031SG8AE,M031SIAAE, M031TB0AE, M031TC1AE, M031TD2AE, M031TE3AE,M032BTAG8AN, M032BTAIAAN, M032EC1AE, M032FC1AE, M032KG6AE,M032KG8AE, M032KIAAE, M032LC2AE, M032LD2AE, M032LE3AE, M032LG6AE,M032LG8AE, M032SE3AE, M032SG6AE, M032SG8AE, M032SIAAE, M032TC1AE,M032TD2AEM071M071MC2AE, M071MD2AE, M071QE4AE, M071QG4AE, M071R1D3AE,M071R1E3AE, M071SD3AE, M071SE3AE, M071VG4AEM051DNM0516LDN, M0516ZDN, M052LDN, M052ZDN, M054LDN, M054ZDN,M058LDN, M058ZDNM051DEM0515LDE, M0516LDE, M0516ZDE, M052LDE, M052ZDE, M054LDE, M054ZDE,M058LDE, M058ZDEM0518AE M0518LC2AE, M0518LD2AE, M0518SC2AE, M0518SD2AEM0519AE M0519LD3AE, M0519LE3AE, M0519SD3AE, M0519SE3AE, M0519VE3AEM0564M0564LE4AE, M0564LG4AE, M0564SE4AE, M0564SG4AE, M0564VG4AEM05641M05641LG4AE, M05641LE4AE, M05641SG4AE, M05641SE4AEM058SAN M058SFAN, M058SLAN, M058SSAN, M058SZANMINI51DEMINI51FDE, MINI51LDE, MINI51TDE, MINI51ZDE, MINI52FDE, MINI52LDE,MINI52TDE, MINI52ZDE, MINI54FDE, MINI54LDE, MINI54TDE, MINI54ZDE MINI55MINI55LDE, MINI55ZDEMINI57MINI57TDE, MINI57EDE, MINI57FDENuTool – PinConfigure Revision History MINI58 MINI58FDE, MINI58LDE, MINI58TDE, MINI58ZDENANO100AN NANO100LC2AN, NANO100LD2AN, NANO100LD3AN, NANO100SC2AN,NANO100SD2AN, NANO100SD3AN, NANO100VD2AN, NANO100VD3AN,NANO100ZC2AN, NANO100ZD2AN, NANO100ZD3AN, NANO120LC2AN,NANO120LD2AN, NANO120LD3AN, NANO120SC2AN, NANO120SD2AN,NANO120SD3AN, NANO120VD2AN, NANO120VD3AN, NANO120ZC2AN,NANO120ZD2AN, NANO120ZD3ANNANO100BN NANO100KD3BN, NANO100KE3BN, NANO100LC2BN, NANO100LD2BN,NANO100LD3BN, NANO100LE3BN, NANO100NC2BN, NANO100ND2BN,NANO100ND3BN, NANO100NE3BN, NANO100SC2BN, NANO100SD2BN,NANO100SD3BN, NANO100SE3BN, NANO110KC2BN, NANO110KD2BN,NANO110KD3BN, NANO110KE3BN, NANO110RC2BN, NANO110RD2BN,NANO110RD3BN, NANO110RE3BN, NANO110SC2BN, NANO110SD2BN,NANO110SD3BN, NANO110SE3BN, NANO120KD3BN, NANO120KE3BN,NANO120LC2BN, NANO120LD2BN, NANO120LD3BN, NANO120LE3BN,NANO120SC2BN, NANO120SD2BN, NANO120SD3BN, NANO120SE3BN,NANO130KC2BN, NANO130KD2BN, NANO130KD3BN, NANO130KE3BN,NANO130SC2BN, NANO130SD2BN, NANO130SD3BN, NANO130SE3BNNANO103 NANO103SD3AE, NANO103LD3AE, NANO103ZD3AENANO102/112AN NANO102LB1AN, NANO102LC2AN, NANO102SC2AN, NANO102ZB1AN,NANO102ZC2AN, NANO112LB1AN, NANO112LC2AN, NANO112RB1AN,NANO112RC2AN, NANO112SB1AN, NANO112SC2AN, NANO112VC2ANNUC029AN NUC029LAN, NUC029NAN, NUC029TANNUC029AE NUC029FAE, NUC029TAENUC029xDE NUC029LDE, NUC029SDENUC029xEE NUC029LEE, NUC029SEENUC029xGE NUC029KGE, NUC029LGE, NUC029SGENUC029MDE NUC029MDENUC029ZAN NUC029ZANNUC130/140CN NUC130LC1CN, NUC130LD2CN, NUC130LE3CN, NUC130RC1CN, NUC130RD2CN,NUC130RE3CN, NUC130VE3CN, NUC140LC1CN, NUC140LD2CN, NUC140LE3CN,NUC140RC1CN, NUC140RD2CN, NUC140RE3CN, NUC140VE3CNNUC100/120DN NUC100LC1DN, NUC100LD2DN, NUC100LE3DN, NUC100RC1DN,NUC100RD1DN, NUC100RD2DN, NUC100RE3DN, NUC100VE3DN,NUC120LC1DN, NUC120LD2DN, NUC120LE3DN, NUC120RC1DN,NUC120RD2DN, NUC120RE3DN, NUC120VE3DNNUC121 NUC121SC2AE, NUC121LC2AE, NUC121ZC2AE, NUC125SC2AE, NUC125LC2AE,NUC125ZC2AENUC123AN NUC123LC2AN1, NUC123LD4AN0, NUC123SC2AN1, NUC123SD4AN0,NUC123ZC2AN1, NUC123ZD4AN0NUC123AE NUC123LC2AE1, NUC123LD4AE0, NUC123SC2AE1, NUC123SD4AE0,NuTool – PinConfigure Revision HistoryNUC123ZC2AE1, NUC123ZD4AE0NUC126NUC126LE4AE, NUC126LG4AE, NUC126NE4AE, NUC126SE4AE, NUC126SG4AE,NUC126VG4AENUC1261NUC1261LG4AE, NUC1261LE4AE, NUC1261NE4AE, NUC1261SG4AE,NUC1261SE4AENUC131AENUC131LC2AE, NUC131LC2AEU, NUC131LD2AE, NUC131LD2AEU,NUC131SC2AE, NUC131SC2AEU, NUC131SD2AE, NUC131SD2AEUNUC1311NUC1311LD2AENUC200/220ANNUC200LC2AN, NUC200LD2AN, NUC200LE3AN, NUC200SC2AN, NUC200SD2AN,NUC200SE3AN, NUC200VE3AN, NUC220LC2AN, NUC220LD2AN, NUC220LE3AN,NUC220SC2AN, NUC220SD2AN, NUC220SE3AN, NUC220VE3ANNUC230/240AENUC230LC2AE, NUC230LD2AE, NUC230LE3AE, NUC230SC2AE, NUC230SD2AE,NUC230SE3AE, NUC230VE3AE, NUC240LC2AE, NUC240LD2AE, NUC240LE3AE,NUC240SC2AE, NUC240SD2AE, NUC240SE3AE, NUC240VE3AENUC2201NUC2201LE3AE, NUC2201SE3AENDA102NDA102EC1, NDA102FC1, NDA102SD2NuMicro®M23 FamilyM251M251EB2AE, M251EC2AE, M251FB2AE, M251FC2AE, M251KE3AE, M251KG6AE,M251LC2AE, M251LD2AE, M251LE3AE, M251LG6AE, M251SC2AE, M251SD2AE,M251SE3AE, M251SG6AE, M251ZB2AE, M251ZC2AE, M251ZD2AE, M252EC2AE,M252FC2AE, 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Effect of cerium addition on microstructure and texture of aluminum foil for electrolytic capaci
JOURNAL OF RARE EARTHS,Vol.28,No.1,Feb.2010,p.134F j y I M I S &T y j ()I M T y R &D j W NG y (f 6@63)DOI 6S ()666Effect of cerium addition on microstr ucture and texture of aluminum foil for electr olytic capacitor sWANG Haiy an (王海燕)1,2,L I Wenx ue (李文学)1,REN Hu iping(任慧平)1,HUANG L iy in g (黄丽颖)1,WAN G Xia ngy ang(王向阳)1(1.School of Material and Metall urgy Engineering,Inner Mongolia University of Science and Technology,Baotou 014010,China;2School of Materials S cience and En-gineering,University of Science and Technology B eijing,Beijing 100083,China)Received 23October 2008;revised 27August 2009Abstract:Anode foil of aluminum electrolytic capacitor,which requires large surface area for high capacitance,were prepared by rolling,an-nealing and electrochemical etching.Effects of cerium addition on the capacitance of aluminum electrolytic capacitors were investigated.Mi-crostructure of the aluminum foil surface was observed by optical microscopy (OM)and scanning electron microscopy (SEM).Electron back scattered diffraction (EBSD)was also employed to reveal texture evolvement of cold-rolled aluminum foil after annealed.The results showed that addition of cerium contributed to higher <100>texture and higher etch pit density as well.Moreover,the distribution of etch tunnels was more uniformcompared with that without cerium addition.Perfect specificsurface area was obtained with 0.0074%addition of cerium.Keywords:electrolytic capacitor;aluminum foil;rare earthsAluminum electrolytic capacitors are widely used in all types of electronic equipments.High voltage electrolytic ca-pacitors consist of an electrolyte put on an anode made from a 40–100μm thin high-purity aluminum foil with an oxide layer serving as dielectric [1].The capacitance of dielectrics depends on the dielectric constant,the thickness,and the surface area.Among those factors,especially for aluminum electrolytic capacitors,the enlargement of the surface area is most effective from the practical viewpoint because of the trend toward capacitor size miniaturization [2,3].The effective surface can be greatly increased through an etching process that forms narrow channels along the crystallographic <001>directions into the foils.Thus,with regard to the cube-tex-ture in the aluminum foils for electrolytic capacitors,produc-tion has to be optimized so as to provide maximum number of cube-nuclei as well as good growth prospect of the cube-orientation [1,4].A strongly textured material consisting of grains with <001>direction parallel to the sheet normal is favorable.In practical application this is achieved by pro-ducing sheets with a strong cube-texture {001}<100>.To increase the surface area,investigation of pit formation seems very important.Many studies have discussed the pits using high-purity aluminum foils during DC etching in HCl solutions,including the shape,morphology of pitting corro-sion,the tunnel pit growth and the effect of impurities on etching behavior [5].In addition,since the thickness of these foils is only 100–110μm,the tunnel length must be con-trolled to less than 50μm,in order to form a non-piercing layer after etching on double surfaces of Al foil [6].Thus,it is necessary to study the principle of tunnel growth to controltunnel length of pits and maintain a non-piercing layer.It has been recognized that the solution composition in-duces certain mechanical,physical and chemical changes,which can lead to activation of chemical and electrochemical reactions,thus result in accelerated material removal and corrosion [7].In general,hydrochloric acid is used for the etching solution,but the size and distribution of etch pits are not uniform with low density as a result of high corrosive-ness.However,effect of solution composition,especially for rare earth element on pitting corrosion,has not been exten-sively or systematically studied,it can be expected that addi-tion of rare earth during electrochemical etching of alumi-num may induce optimum etch structure,and produces high surface of aluminum foil.Therefore,to increase the specific internal area by reducing the rate of dissolution concentrated on local area and producing dense etch pits,studies of rare earth addition was carried out in this work.1ExperimentalHigh-purity (>99.9972%)aluminum foils with different cerium additions of 0.006wt.%,0.0074wt.%,and 0.012wt.%were used.The impurities in the aluminum are as follows (wt.%):Fe 0.00071,Si 0.00070,Cu 0.00125,Zn 0.00014,and Ti 0.00005.The thickness of aluminum ingot was 18mm,after homogenized treatment,reheating,hot rolling and reversibly cold rolling with a thickness reduction of as much as 98%to a final thickness of 0.11mm.Finally,all speci-mens were isothermally annealed for various times in salt bath furnace.For DC electrolytic etching test,specimensound at ion it em:P ro e ct supported b the nne r ongolia mporta nt cie nc e e chnolog Pro ec t 20071911a nd nner ongolia e chnolog ese arch evelopment Pro ec tCorre sponding a uthor :A H ai an E-ma il:w ind :10.101/1002-07210900-1WANG Haiyan et al.,Effect of cerium addition on microstructure and texture of aluminum foil for electrolytic capacitors 135were cut into 10mm ×55mm,and exposed with an area of 1cm 2to the etching solution.The rest of the specimen was masked with polyester tape.All the specimens were pre-treated in HCl+H 2SO 4(3:1)solution and then rinsed with deionized water before electrolytic etching test.Surface morphology of the recrystallized foils and etch tunnels were observed by means of optical microscopy and scanning electron microscopy (SEM).The evolution of cube-texture during isothermal annealing of the cold rolled foils was tracked by crystallographic texture using electron back scattered diffraction (EBSD)micro texture analysis [8].2Results and discussionFig.1(a –d)show the shape and distribution of the etch pit formed in the solutions with cerium additions of 0wt.%,0.006wt.%,0.0074wt.%,and 0.012wt.%respectively.It is found that there are noticeable differences in the morpholo-gies of etch pits,depending on the additive.The intensity of the cube-orientation {001}<100>changed with the increas-ing of cerium content.As shown in Fig.1(a),when cerium is not applied,about 20%of the tunnels observed at 15μm become alive in the process of tunnel growth,while more tunnels are observed with cerium addition and the survival rate increases in Fig.1(b),(c)and (d).Compared with those with additives,the density of etch pits is low in pure alumi-num foil.The length,widths and depths of individual pits weremeasured for each specimen.As shown in Fig.1,under the conditions without additive and with 0.006wt.%Ce,0.0074wt.%Ce,and 0.012wt.%Ce,the density of etch pit is 0.9×105,3.2×105,4.3×105and 6.1×105pits/cm 2,and the av-erage size is 14.0,12.2,9.0and 8.6μm,respectively.The number of etch pits generated in the etching solutions with rare earth additives is about twice as much as that formed without additive as shown in Fig.1(a).This system is typical of the Al-RE (rare earth)series.Ce-rium exists as stable intermetallic compounds in aluminum,and with a negative enthalpy of mixing in the liquid phase [9].There are some kinds of micro impurity,such as Fe,Si,Mn in aluminum,Ce will form compound of CeFe 2Al 10,CeSi 2A13,CeMn 4Al 8,Ce 2Mn 7Al 10,(CeMg)Al 2,etc.[10]These com-pounds can purify the matrix and eliminate the obstruction of impurity,especially the effect of Fe on nucleation and growth of cube orientation grains during annealing process,and thus increase the cube orientation of aluminum foil,which agrees with the etch pits measurement shown in Fig.1.Fig.2shows the texture evolution of samples with differ-ent rare earth contents cold-rolled and annealed at 530°C for 600s.In Fig.2(a),some minor intensities of cube-orienta-tion {001}<100>are observed.By contrast,with cerium addition,the texture has changed in Fig.2(b).The ODF (ΔΦ=5°)is characterized by very sharp cube-orientation dominating over the rolled texture,for the aluminum foil with 0.0074wt.%pare to the Fig.2(b),the 0.019wt.%Ce addition showed weaker cube-orientationtextureFig.1Recrystallized microstructureof aluminumfoil without Ce (a),with 0.006wt.%Ce (b),with 0.0074wt.%Ce(c)and with 0.012wt.%Ce(d)F T x f f 53f 6(),%()%()ig.2e tureevolution o the samples a terannealed at 0o C or 00s without Ce a with 0.0074wt.Ce b and with 0.012wt.Ce c136JOURNAL OF RARE EARTHS,Vol.28,No.1,Feb.2010(Fig.2(c)).To sum up,annealed samples with cerium addi-tion have higher intensity of cube-orientation {001}<100>and the cube texture reaches the maximum with 0.0074wt.%Ce.With further addition of Ce,cube texture density weak-ens.In order to develop greater understanding of texture evolvement,{111}pole figures,determined from EBSP,for the above specimens with different rare earth contents cold-rolled and annealed at 530°C,are shown in Fig.3,where separate measurements were made on small and large grains.The sample of cold rolled and annealed high purity alu-minum had a random texture with few grains exhibiting cube,S and Cu orientations (see Fig.3(a)),while addition of 0.0074wt.%cerium resulted in sharp cube texture,i.e.,more than 90%{100}<001>orientations with little other texture component are observed in Fig.3(b).With more Ce addi-tions,Fig.3(c)indicates that the orientations are similar to those of the grains shown in Fig.3(b),i.e.,cube texture with minor other texture components.However,the cube texture is less sharp,the contour line tend to sparse,with other ori-entations starting to be presented.It is known that addition of rare earth can refine crys-tal [11,12],and induce boundary corrosion,since higher bound-ary density reduces segregation of impurity atoms and dis-tribution inhomogeneity of current density.Therefore,it is possible to increase the specific electric capacity through de-creasing the grain size under special corrosion conditions [4].With increasing rare earth content,higher defect density and corresponding local concentration of corrosion current den-sity around grain boundaries induce preferred corrosion of rge corrosion holes or channels will appear frequently along the grain boundaries,which lead to the in-homogeneity of corroded structure.Taking the microstructure and texture evolution into ac-count,we conclude that control of cerium addition produces different recrystallization textures during annealing of cold-rolled aluminum,from which the favorite corrosion orienta-tion can be found.When aluminum is electrochemically etched,cubic pits are initially formed and turned into tunnels as the pits grow up.The SEM images of the aluminum etched pit shown in Fig.4corroborate the microstructural evolvement.Fig.4(a)shows that the tunnel length is approximately 20μm.Fig.4(b)indicates that many dark and small tunnels distribute along the tunnel depth in the etched aluminum foils with 0.0074wt.%Ce addition.It is easy to verify that cerium additive induces higher density of small etch pits and contributes their further growth into tunnels by enhancing the mass transport inside one-dimensional tunnel structure.Uniform tunnel length distribution increases the surface area which favors capacitance.It should be noted,however,that large etch pit forms in Fig.4(c)which is rooted in the connections of many small pits ，thus the tunnel wall along its depth will pare to the smaller pits,the surface of tunnel will decrease,as a result of blocking of small pits or tunnels by oxides with the increasing of cerium.The specific capaci-tance obtained by using alternating current impedance [13]shows that the capacitance at first increases,and then de-creases with increasing rare earth addition,it means that the content of rare earth should be controlled to certain extent,and the highest specific surface area was obtained from the specimen with 0.0074wt.%Ce.The effect of cerium on the corrosion of aluminum has been investigated by incorporating cerium into aluminum substrates and observing the subsequent anodic oxidation behavior of the alloys [14].The corrosion resistance of alumi-Fig.3{111}pole figures for sample after annealed at 530°C for600s without Ce (a),with 0.0074wt.%Ce (b)and with 0.012wt.%Ce(c)F S M f f (),%()%()ig.4E images o the aluminum oil without Ce a with 0.0074wt.Ce b and with 0.012wt.Ce cWANG Haiyan et al.,Effect of cerium addition on microstructure and texture of aluminum foil for electrolytic capacitors137num in aqueous media can be attributed to rapid formation of surface oxide film[15].Hydrochloric acid is used as etching solution,and Cl–plays an important role in spot corrosion and development,which has great effect on the oxide scale dissolution of the aluminum foil surface.Cl–is adsorbed on the special location of oxide surface,dissolves the oxide scales and formed Al(OH)2Cl,Al(OH)Cl2,AlCl2+,AlCl3, Al(OH)Cl+,finally produces etch pits on the surface of Al. Cerium and aluminium are oxidized at the alloy/film inter-face and incorporated into the anode film.In general,the oxide layer spread over the macroscopic surface,improves active hole forming[16],thus increases the specific internal area.However,when the content of cerium keeps increasing, the distribution inhomogeneity induces the substantial in-crease of chemistry activity,and results in large number of etching pits,which generates film breakdown over alumi-num surface.During the growth of tunnel,metal dissolution occurs from its surface,while the tunnel sidewalls are cov-ered with oxide film which restrain corrosion,which results in inferior capacitance[17].As mentioned above,we can estimate that the introduction of cerium reduces the thickness of oxide film on aluminum metal and induces the nucleation of etch pits.Therefore,ad-dition of rare earth has certain potential to be used for the application of aluminum electrolytic capacitors,and the in-volved researches are still underway to be carried out.3ConclusionsCerium was introduced to control the etch pits and tunnel length distribution on aluminum foil for electrolytic capaci-tors.The dissolution of cerium during electrochemical etch-ing might induce the optimum etch structure,produce high surface area and finally increase the capacitance,since addi-tion of cerium prohibited initial oxide film formation during etching but favors the formation of corrosion pits.In this work,the most perfect surface area was obtained when the addition of Ce reached0.0074wt.%.References:[1]Engler O,Huh M Y.Evolution of the cube texture in high pu-rity aluminum capacitor foils by continuous recrystallization and subsequent grain growth.Mater.Sci.Eng.A,1999,271(1): 371.[2]Scherer J,Magnussen O M,Ebel T,Behm R J.Initial stages ofthe anodic etching of aluminum foils studied by atomic force microscopy.Corros.Sci.,1999,41(1):35.[3]Oh H J,Lee J H,Ahn H J,Jeong Y S,Park N J,Kim S S,ChiC S.Etching characteristics of high-purity aluminum in hy-drochloric acid solutions.Mater.Sci.Eng.A,2007,449-451(25):348.[4]Mao Weimin,Chen Lei,Sa Liman,Yu Yongning,Li Yunfeng.Influence of grain boundaries on corrosion structure of low voltage aluminum foil.T he Chinese Journal of Nonferrous Metals(in Chin.),2004,14(1):1.[5]Osawa N,Fukuoka K.Pit nucleation behavior of aluminiumfoil for electrolytic capacitors during early stage of DC etching.Corros.Sci.,2000,42(3):585.[6]Wang Mei,He Yedong.Growth and passivation of aluminumetch tunnels at on-off controlling direct current in6wt.%HCl solution.Rare Metals,2008,27(2):205.[7]Liu Guili,Zhang Guoying,Li Rongde.Electronic theoreticalstudy of the interaction between rare earth elements and impu-rities at grain boundaries in steel.J.Rare Earths,2003,21(3): 372.[8]Baker I,Li J.An EBSP study of isothermally-annealed cold-rolled nickel.Microscopy Research and T echnique,2004,63: 289.[9]Kang Y B,Peltona A D,Chartranda P,Fuerst C D.Criticalevaluation and thermodynamic optimization of the Al-Ce,Al-Y, Al-Sc and Mg-Sc binary put.Coupling Phase Diagrams Thermochem.,2008,32:413.[10]Deng Yunlai,Zhang Xinmin,Liu Chunming,Chen Zhiyong,Zhou Zhuoping.The effect of trace RE on the evolution of tex-tures in high voltage aluminum capacitor foils.Functional Material,2002,33(1):60.[11]Li Chunlong,Wang Yunsheng,Chen Jianjun,Liu Chengjun,Jiang Maofa.Effects of rare earth on structure and mechanical properties of clean BNbRE steel.J.Rare Earths,2005,23(4): 470.[12]Lin Qin,Guo Feng,Zhu Xingyuan.Behaviors oflanthanum and ce-rium on grain boundaries in carbon manganese clean steel.J.Rare Earths,2007,25(4):485.[13]Wang Xiangyang.Study of the Electrolytic Etching of Ce Alumi-num Foil for Gigh Voltage Anode of Electrolytic Capacitor.Inner mongolia:InnerMongoliaUniv.Sci.&Tech.,2008.5.[14]Tomcsany L,V arga K,Bartik Ietal.Study of the interaction ofCl–with A passive film on Al and initiation of pitting corrosion.Electrochim.A cta,1989,34(5):855.[15]Mishra A K,Balasubramaniam R.Corrosion inhibition of alu-minium by rare earth chlorides.Mater.Chem.Phy s.,2007, 103(2-3):385.[16]Crossland A C,Thompson G E,Skeldon P,Wood G C,SmithC J E,Habazaki H,Shimizu K.Anodic oxidation of Al-Ce Al-loys and inhibitive behavior of Cerium species.Corros.Sci., 1998,40(6):871.[17]Kang J W,Shin Y H,Tak Y S.Growth of etch pits formedduring sonoelectrochemical etching of aluminum.Electro-chimica A cta,2005,51(5):1012.。
jstd035声学扫描
JOINT INDUSTRY STANDARDAcoustic Microscopy for Non-HermeticEncapsulatedElectronicComponents IPC/JEDEC J-STD-035APRIL1999Supersedes IPC-SM-786 Supersedes IPC-TM-650,2.6.22Notice EIA/JEDEC and IPC Standards and Publications are designed to serve thepublic interest through eliminating misunderstandings between manufacturersand purchasers,facilitating interchangeability and improvement of products,and assisting the purchaser in selecting and obtaining with minimum delaythe proper product for his particular need.Existence of such Standards andPublications shall not in any respect preclude any member or nonmember ofEIA/JEDEC or IPC from manufacturing or selling products not conformingto such Standards and Publications,nor shall the existence of such Standardsand Publications preclude their voluntary use by those other than EIA/JEDECand IPC members,whether the standard is to be used either domestically orinternationally.Recommended Standards and Publications are adopted by EIA/JEDEC andIPC without regard to whether their adoption may involve patents on articles,materials,or processes.By such action,EIA/JEDEC and IPC do not assumeany liability to any patent owner,nor do they assume any obligation whateverto parties adopting the Recommended Standard or ers are alsowholly responsible for protecting themselves against all claims of liabilities forpatent infringement.The material in this joint standard was developed by the EIA/JEDEC JC-14.1Committee on Reliability Test Methods for Packaged Devices and the IPCPlastic Chip Carrier Cracking Task Group(B-10a)The J-STD-035supersedes IPC-TM-650,Test Method2.6.22.For Technical Information Contact:Electronic Industries Alliance/ JEDEC(Joint Electron Device Engineering Council)2500Wilson Boulevard Arlington,V A22201Phone(703)907-7560Fax(703)907-7501IPC2215Sanders Road Northbrook,IL60062-6135 Phone(847)509-9700Fax(847)509-9798Please use the Standard Improvement Form shown at the end of thisdocument.©Copyright1999.The Electronic Industries Alliance,Arlington,Virginia,and IPC,Northbrook,Illinois.All rights reserved under both international and Pan-American copyright conventions.Any copying,scanning or other reproduction of these materials without the prior written consent of the copyright holder is strictly prohibited and constitutes infringement under the Copyright Law of the United States.IPC/JEDEC J-STD-035Acoustic Microscopyfor Non-Hermetic EncapsulatedElectronicComponentsA joint standard developed by the EIA/JEDEC JC-14.1Committee on Reliability Test Methods for Packaged Devices and the B-10a Plastic Chip Carrier Cracking Task Group of IPCUsers of this standard are encouraged to participate in the development of future revisions.Contact:EIA/JEDEC Engineering Department 2500Wilson Boulevard Arlington,V A22201 Phone(703)907-7500 Fax(703)907-7501IPC2215Sanders Road Northbrook,IL60062-6135 Phone(847)509-9700Fax(847)509-9798ASSOCIATION CONNECTINGELECTRONICS INDUSTRIESAcknowledgmentMembers of the Joint IPC-EIA/JEDEC Moisture Classification Task Group have worked to develop this document.We would like to thank them for their dedication to this effort.Any Standard involving a complex technology draws material from a vast number of sources.While the principal members of the Joint Moisture Classification Working Group are shown below,it is not possible to include all of those who assisted in the evolution of this Standard.To each of them,the mem-bers of the EIA/JEDEC and IPC extend their gratitude.IPC Packaged Electronic Components Committee ChairmanMartin FreedmanAMP,Inc.IPC Plastic Chip Carrier Cracking Task Group,B-10a ChairmanSteven MartellSonoscan,Inc.EIA/JEDEC JC14.1CommitteeChairmanJack McCullenIntel Corp.EIA/JEDEC JC14ChairmanNick LycoudesMotorolaJoint Working Group MembersCharlie Baker,TIChristopher Brigham,Hi/FnRalph Carbone,Hewlett Packard Co. Don Denton,TIMatt Dotty,AmkorMichele J.DiFranza,The Mitre Corp. Leo Feinstein,Allegro Microsystems Inc.Barry Fernelius,Hewlett Packard Co. Chris Fortunko,National Institute of StandardsRobert J.Gregory,CAE Electronics, Inc.Curtis Grosskopf,IBM Corp.Bill Guthrie,IBM Corp.Phil Johnson,Philips Semiconductors Nick Lycoudes,MotorolaSteven R.Martell,Sonoscan Inc. Jack McCullen,Intel Corp.Tom Moore,TIDavid Nicol,Lucent Technologies Inc.Pramod Patel,Advanced Micro Devices Inc.Ramon R.Reglos,XilinxCorazon Reglos,AdaptecGerald Servais,Delphi Delco Electronics SystemsRichard Shook,Lucent Technologies Inc.E.Lon Smith,Lucent Technologies Inc.Randy Walberg,NationalSemiconductor Corp.Charlie Wu,AdaptecEdward Masami Aoki,HewlettPackard LaboratoriesFonda B.Wu,Raytheon Systems Co.Richard W.Boerdner,EJE ResearchVictor J.Brzozowski,NorthropGrumman ES&SDMacushla Chen,Wus Printed CircuitCo.Ltd.Jeffrey C.Colish,Northrop GrummanCorp.Samuel J.Croce,Litton AeroProducts DivisionDerek D-Andrade,Surface MountTechnology CentreRao B.Dayaneni,Hewlett PackardLaboratoriesRodney Dehne,OEM WorldwideJames F.Maguire,Boeing Defense&Space GroupKim Finch,Boeing Defense&SpaceGroupAlelie Funcell,Xilinx Inc.Constantino J.Gonzalez,ACMEMunir Haq,Advanced Micro DevicesInc.Larry A.Hargreaves,DC.ScientificInc.John T.Hoback,Amoco ChemicalCo.Terence Kern,Axiom Electronics Inc.Connie M.Korth,K-Byte/HibbingManufacturingGabriele Marcantonio,NORTELCharles Martin,Hewlett PackardLaboratoriesRichard W.Max,Alcatel NetworkSystems Inc.Patrick McCluskey,University ofMarylandJames H.Moffitt,Moffitt ConsultingServicesRobert Mulligan,Motorola Inc.James E.Mumby,CibaJohn Northrup,Lockheed MartinCorp.Dominique K.Numakura,LitchfieldPrecision ComponentsNitin B.Parekh,Unisys Corp.Bella Poborets,Lucent TechnologiesInc.D.Elaine Pope,Intel Corp.Ray Prasad,Ray Prasad ConsultancyGroupAlbert Puah,Adaptec Inc.William Sepp,Technic Inc.Ralph W.Taylor,Lockheed MartinCorp.Ed R.Tidwell,DSC CommunicationsCorp.Nick Virmani,Naval Research LabKen Warren,Corlund ElectronicsCorp.Yulia B.Zaks,Lucent TechnologiesInc.IPC/JEDEC J-STD-035April1999 iiTable of Contents1SCOPE (1)2DEFINITIONS (1)2.1A-mode (1)2.2B-mode (1)2.3Back-Side Substrate View Area (1)2.4C-mode (1)2.5Through Transmission Mode (2)2.6Die Attach View Area (2)2.7Die Surface View Area (2)2.8Focal Length(FL) (2)2.9Focus Plane (2)2.10Leadframe(L/F)View Area (2)2.11Reflective Acoustic Microscope (2)2.12Through Transmission Acoustic Microscope (2)2.13Time-of-Flight(TOF) (3)2.14Top-Side Die Attach Substrate View Area (3)3APPARATUS (3)3.1Reflective Acoustic Microscope System (3)3.2Through Transmission AcousticMicroscope System (4)4PROCEDURE (4)4.1Equipment Setup (4)4.2Perform Acoustic Scans..........................................4Appendix A Acoustic Microscopy Defect CheckSheet (6)Appendix B Potential Image Pitfalls (9)Appendix C Some Limitations of AcousticMicroscopy (10)Appendix D Reference Procedure for PresentingApplicable Scanned Data (11)FiguresFigure1Example of A-mode Display (1)Figure2Example of B-mode Display (1)Figure3Example of C-mode Display (2)Figure4Example of Through Transmission Display (2)Figure5Diagram of a Reflective Acoustic MicroscopeSystem (3)Figure6Diagram of a Through Transmission AcousticMicroscope System (3)April1999IPC/JEDEC J-STD-035iiiIPC/JEDEC J-STD-035April1999This Page Intentionally Left BlankivApril1999IPC/JEDEC J-STD-035 Acoustic Microscopy for Non-Hermetic EncapsulatedElectronic Components1SCOPEThis test method defines the procedures for performing acoustic microscopy on non-hermetic encapsulated electronic com-ponents.This method provides users with an acoustic microscopy processflow for detecting defects non-destructively in plastic packages while achieving reproducibility.2DEFINITIONS2.1A-mode Acoustic data collected at the smallest X-Y-Z region defined by the limitations of the given acoustic micro-scope.An A-mode display contains amplitude and phase/polarity information as a function of time offlight at a single point in the X-Y plane.See Figure1-Example of A-mode Display.IPC-035-1 Figure1Example of A-mode Display2.2B-mode Acoustic data collected along an X-Z or Y-Z plane versus depth using a reflective acoustic microscope.A B-mode scan contains amplitude and phase/polarity information as a function of time offlight at each point along the scan line.A B-mode scan furnishes a two-dimensional(cross-sectional)description along a scan line(X or Y).See Figure2-Example of B-mode Display.IPC-035-2 Figure2Example of B-mode Display(bottom half of picture on left)2.3Back-Side Substrate View Area(Refer to Appendix A,Type IV)The interface between the encapsulant and the back of the substrate within the outer edges of the substrate surface.2.4C-mode Acoustic data collected in an X-Y plane at depth(Z)using a reflective acoustic microscope.A C-mode scan contains amplitude and phase/polarity information at each point in the scan plane.A C-mode scan furnishes a two-dimensional(area)image of echoes arising from reflections at a particular depth(Z).See Figure3-Example of C-mode Display.1IPC/JEDEC J-STD-035April1999IPC-035-3 Figure3Example of C-mode Display2.5Through Transmission Mode Acoustic data collected in an X-Y plane throughout the depth(Z)using a through trans-mission acoustic microscope.A Through Transmission mode scan contains only amplitude information at each point in the scan plane.A Through Transmission scan furnishes a two-dimensional(area)image of transmitted ultrasound through the complete thickness/depth(Z)of the sample/component.See Figure4-Example of Through Transmission Display.IPC-035-4 Figure4Example of Through Transmission Display2.6Die Attach View Area(Refer to Appendix A,Type II)The interface between the die and the die attach adhesive and/or the die attach adhesive and the die attach substrate.2.7Die Surface View Area(Refer to Appendix A,Type I)The interface between the encapsulant and the active side of the die.2.8Focal Length(FL)The distance in water at which a transducer’s spot size is at a minimum.2.9Focus Plane The X-Y plane at a depth(Z),which the amplitude of the acoustic signal is maximized.2.10Leadframe(L/F)View Area(Refer to Appendix A,Type V)The imaged area which extends from the outer L/F edges of the package to the L/F‘‘tips’’(wedge bond/stitch bond region of the innermost portion of the L/F.)2.11Reflective Acoustic Microscope An acoustic microscope that uses one transducer as both the pulser and receiver. (This is also known as a pulse/echo system.)See Figure5-Diagram of a Reflective Acoustic Microscope System.2.12Through Transmission Acoustic Microscope An acoustic microscope that transmits ultrasound completely through the sample from a sending transducer to a receiver on the opposite side.See Figure6-Diagram of a Through Transmis-sion Acoustic Microscope System.2April1999IPC/JEDEC J-STD-0353IPC/JEDEC J-STD-035April1999 3.1.6A broad band acoustic transducer with a center frequency in the range of10to200MHz for subsurface imaging.3.2Through Transmission Acoustic Microscope System(see Figure6)comprised of:3.2.1Items3.1.1to3.1.6above3.2.2Ultrasonic pulser(can be a pulser/receiver as in3.1.1)3.2.3Separate receiving transducer or ultrasonic detection system3.3Reference packages or standards,including packages with delamination and packages without delamination,for use during equipment setup.3.4Sample holder for pre-positioning samples.The holder should keep the samples from moving during the scan and maintain planarity.4PROCEDUREThis procedure is generic to all acoustic microscopes.For operational details related to this procedure that apply to a spe-cific model of acoustic microscope,consult the manufacturer’s operational manual.4.1Equipment Setup4.1.1Select the transducer with the highest useable ultrasonic frequency,subject to the limitations imposed by the media thickness and acoustic characteristics,package configuration,and transducer availability,to analyze the interfaces of inter-est.The transducer selected should have a low enough frequency to provide a clear signal from the interface of interest.The transducer should have a high enough frequency to delineate the interface of interest.Note:Through transmission mode may require a lower frequency and/or longer focal length than reflective mode.Through transmission is effective for the initial inspection of components to determine if defects are present.4.1.2Verify setup with the reference packages or standards(see3.3above)and settings that are appropriate for the trans-ducer chosen in4.1.1to ensure that the critical parameters at the interface of interest correlate to the reference standard uti-lized.4.1.3Place units in the sample holder in the coupling medium such that the upper surface of each unit is parallel with the scanning plane of the acoustic transducer.Sweep air bubbles away from the unit surface and from the bottom of the trans-ducer head.4.1.4At afixed distance(Z),align the transducer and/or stage for the maximum reflected amplitude from the top surface of the sample.The transducer must be perpendicular to the sample surface.4.1.5Focus by maximizing the amplitude,in the A-mode display,of the reflection from the interface designated for imag-ing.This is done by adjusting the Z-axis distance between the transducer and the sample.4.2Perform Acoustic Scans4.2.1Inspect the acoustic image(s)for any anomalies,verify that the anomaly is a package defect or an artifact of the imaging process,and record the results.(See Appendix A for an example of a check sheet that may be used.)To determine if an anomaly is a package defect or an artifact of the imaging process it is recommended to analyze the A-mode display at the location of the anomaly.4.2.2Consider potential pitfalls in image interpretation listed in,but not limited to,Appendix B and some of the limita-tions of acoustic microscopy listed in,but not limited to,Appendix C.If necessary,make adjustments to the equipment setup to optimize the results and rescan.4April1999IPC/JEDEC J-STD-035 4.2.3Evaluate the acoustic images using the failure criteria specified in other appropriate documents,such as J-STD-020.4.2.4Record the images and thefinal instrument setup parameters for documentation purposes.An example checklist is shown in Appendix D.5IPC/JEDEC J-STD-035April19996April1999IPC/JEDEC J-STD-035Appendix AAcoustic Microscopy Defect Check Sheet(continued)CIRCUIT SIDE SCANImage File Name/PathDelamination(Type I)Die Circuit Surface/Encapsulant Number Affected:Average%Location:Corner Edge Center (Type II)Die/Die Attach Number Affected:Average%Location:Corner Edge Center (Type III)Encapsulant/Substrate Number Affected:Average%Location:Corner Edge Center (Type V)Interconnect tip Number Affected:Average%Interconnect Number Affected:Max.%Length(Type VI)Intra-Laminate Number Affected:Average%Location:Corner Edge Center Comments:CracksAre cracks present:Yes NoIf yes:Do any cracks intersect:bond wire ball bond wedge bond tab bump tab leadDoes crack extend from leadfinger to any other internal feature:Yes NoDoes crack extend more than two-thirds the distance from any internal feature to the external surfaceof the package:Yes NoAdditional verification required:Yes NoComments:Mold Compound VoidsAre voids present:Yes NoIf yes:Approx.size Location(if multiple voids,use comment section)Do any voids intersect:bond wire ball bond wedge bond tab bump tab lead Additional verification required:Yes NoComments:7IPC/JEDEC J-STD-035April1999Appendix AAcoustic Microscopy Defect Check Sheet(continued)NON-CIRCUIT SIDE SCANImage File Name/PathDelamination(Type IV)Encapsulant/Substrate Number Affected:Average%Location:Corner Edge Center (Type II)Substrate/Die Attach Number Affected:Average%Location:Corner Edge Center (Type V)Interconnect Number Affected:Max.%LengthLocation:Corner Edge Center (Type VI)Intra-Laminate Number Affected:Average%Location:Corner Edge Center (Type VII)Heat Spreader Number Affected:Average%Location:Corner Edge Center Additional verification required:Yes NoComments:CracksAre cracks present:Yes NoIf yes:Does crack extend more than two-thirds the distance from any internal feature to the external surfaceof the package:Yes NoAdditional verification required:Yes NoComments:Mold Compound VoidsAre voids present:Yes NoIf yes:Approx.size Location(if multiple voids,use comment section)Additional verification required:Yes NoComments:8Appendix BPotential Image PitfallsOBSERV ATIONS CAUSES/COMMENTSUnexplained loss of front surface signal Gain setting too lowSymbolization on package surfaceEjector pin knockoutsPin1and other mold marksDust,air bubbles,fingerprints,residueScratches,scribe marks,pencil marksCambered package edgeUnexplained loss of subsurface signal Gain setting too lowTransducer frequency too highAcoustically absorbent(rubbery)fillerLarge mold compound voidsPorosity/high concentration of small voidsAngled cracks in package‘‘Dark line boundary’’(phase cancellation)Burned molding compound(ESD/EOS damage)False or spotty indication of delamination Low acoustic impedance coating(polyimide,gel)Focus errorIncorrect delamination gate setupMultilayer interference effectsFalse indication of adhesion Gain set too high(saturation)Incorrect delamination gate setupFocus errorOverlap of front surface and subsurface echoes(transducerfrequency too low)Fluidfilling delamination areasApparent voiding around die edge Reflection from wire loopsIncorrect setting of void gateGraded intensity Die tilt or lead frame deformation Sample tiltApril1999IPC/JEDEC J-STD-0359Appendix CSome Limitations of Acoustic MicroscopyAcoustic microscopy is an analytical technique that provides a non-destructive method for examining plastic encapsulated components for the existence of delaminations,cracks,and voids.This technique has limitations that include the following: LIMITATION REASONAcoustic microscopy has difficulty infinding small defects if the package is too thick.The ultrasonic signal becomes more attenuated as a function of two factors:the depth into the package and the transducer fre-quency.The greater the depth,the greater the attenuation.Simi-larly,the higher the transducer frequency,the greater the attenu-ation as a function of depth.There are limitations on the Z-axis(axial)resolu-tion.This is a function of the transducer frequency.The higher the transducer frequency,the better the resolution.However,the higher frequency signal becomes attenuated more quickly as a function of depth.There are limitations on the X-Y(lateral)resolu-tion.The X-Y(lateral)resolution is a function of a number of differ-ent variables including:•Transducer characteristics,including frequency,element diam-eter,and focal length•Absorption and scattering of acoustic waves as a function of the sample material•Electromechanical properties of the X-Y stageIrregularly shaped packages are difficult to analyze.The technique requires some kind offlat reference surface.Typically,the upper surface of the package or the die surfacecan be used as references.In some packages,cambered packageedges can cause difficulty in analyzing defects near the edgesand below their surfaces.Edge Effect The edges cause difficulty in analyzing defects near the edge ofany internal features.IPC/JEDEC J-STD-035April1999 10April1999IPC/JEDEC J-STD-035Appendix DReference Procedure for Presenting Applicable Scanned DataMost of the settings described may be captured as a default for the particular supplier/product with specific changes recorded on a sample or lot basis.Setup Configuration(Digital Setup File Name and Contents)Calibration Procedure and Calibration/Reference Standards usedTransducerManufacturerModelCenter frequencySerial numberElement diameterFocal length in waterScan SetupScan area(X-Y dimensions)Scan step sizeHorizontalVerticalDisplayed resolutionHorizontalVerticalScan speedPulser/Receiver SettingsGainBandwidthPulseEnergyRepetition rateReceiver attenuationDampingFilterEcho amplitudePulse Analyzer SettingsFront surface gate delay relative to trigger pulseSubsurface gate(if used)High passfilterDetection threshold for positive oscillation,negative oscillationA/D settingsSampling rateOffset settingPer Sample SettingsSample orientation(top or bottom(flipped)view and location of pin1or some other distinguishing characteristic) Focus(point,depth,interface)Reference planeNon-default parametersSample identification information to uniquely distinguish it from others in the same group11IPC/JEDEC J-STD-035April1999Appendix DReference Procedure for Presenting Applicable Scanned Data(continued) Reference Procedure for Presenting Scanned DataImagefile types and namesGray scale and color image legend definitionsSignificance of colorsIndications or definition of delaminationImage dimensionsDepth scale of TOFDeviation from true aspect ratioImage type:A-mode,B-mode,C-mode,TOF,Through TransmissionA-mode waveforms should be provided for points of interest,such as delaminated areas.In addition,an A-mode image should be provided for a bonded area as a control.12Standard Improvement FormIPC/JEDEC J-STD-035The purpose of this form is to provide the Technical Committee of IPC with input from the industry regarding usage of the subject standard.Individuals or companies are invited to submit comments to IPC.All comments will be collected and dispersed to the appropriate committee(s).If you can provide input,please complete this form and return to:IPC2215Sanders RoadNorthbrook,IL 60062-6135Fax 847509.97981.I recommend changes to the following:Requirement,paragraph number Test Method number,paragraph numberThe referenced paragraph number has proven to be:Unclear Too RigidInErrorOther2.Recommendations forcorrection:3.Other suggestions for document improvement:Submitted by:Name Telephone Company E-mailAddress City/State/ZipDate ASSOCIATION CONNECTING ELECTRONICS INDUSTRIESASSOCIATION CONNECTINGELECTRONICS INDUSTRIESISBN#1-580982-28-X2215 Sanders Road, Northbrook, IL 60062-6135Tel. 847.509.9700 Fax 847.509.9798。
Effect of La_2O_3 on microstructure and high-temperature wear property of hot-press sintering Fe
JOURNAL OF RARE EARTHS,Vol.27,No.6,Dec.2009,p.1031Fou ndation it em:Project supported by t he National Natural Science Foundati on of China (50575034)Cor respondin g aut hor:JIN Zhuji (E-mail:ki msg@;Tel.:+86-411-84706519)DOI 6S ()633XEffect of La 2O 3on microstr uctur e and high-temperature wear proper ty of hot-press sinter ing FeAl intermetallic compoundMA Xingwei (马兴伟)1,JIN Zhuji (金洙吉)1,YAN Shi (闫石)1,XU Jiujun (徐久军)2(1.Key Laboratory for Precis ion and Non-Traditional Machini ng Technology of Mini stry of Education,Dalian University of Technol ogy,Dalian 116024,China;2.Elec-tromechanics and Material Engineering College,Dali an Maritime University,Dali an 116026,China)Received 9April 2009;revi sed 10October 2009Abstract:FeAl intermetallic compound with different contents of rare earth oxide La 2O 3addition was prepared by hot pressing the me-chanically alloyed powders.Effect of La 2O 3on microstructure and high-temperature wear property of the sintered FeAl samples was investi-gated in this paper.The results showed that 1wt.%La 2O 3addition could refine the microstructure and increase the density of the FeAl inter-metallic compound,and correspondingly improved the high-temperature wear resistance.SEM and EDS analyses of the worn surface indi-cated that micro-ploughing and local melting combined with oxidation were the dominant wear mechanisms.Keywords:FeAl;La 2O 3;hot-press sintering;high-temperature wear resistance;local melting combined with oxidation;rare earthsIntermetallic compound B2-FeAl has attracted much at-tention as potential high-temperature structural and antifric-tion material due to its excellent combined properties from room to high temperature,such as low density and cost,high strength and hardness,excellent oxidation and sulfuration resistance.Whereas its low plasticity and poor machinability at room-temperature limit its application in the fields men-tioned above [1–4].Many attempts have been done to improvethe properties of FeAl intermetallic alloys [5–8],and additionof rare earths has become an effective method [9].Rare earths (RE)are widely used in metallurgical fields [10,11],due to im-proved performance of sintering,heat-machining,mechanics,oxidation/corrosion and wear resistance by means of puri-fying,transformation and alloying processes.Wang K L et al.[12]reported effects of rare earth oxides on microstructure and corrosion resistance of laser clad nickel-based alloys and Wang Y et al.[9]presented influence of CeO 2on corro-sion and wear resistance of FeAl thermal-spraying coating,indicating that addition of CeO 2can improve coating quality,lessen cracks,increase coating hardness,and consequently enhance wear resistance.However,previous researches on RE addition to FeAl intermetallic alloys were focused mainly on coatings,but bulk materials were rarely referred so far.In this article,La 2O 3addition on FeAl bulk material was prepared by hot-pressing the mechanically alloyed (MAed)Fe-Al powders,and the influence of RE oxide La 2O 3on structure and high-temperature wear performanceof FeAl compound was investigated.The wear mechanism was also analyzed.1Experimental1.1Preparation of the samplesCommercial powders of iron (purity 99.5%,200mesh)and aluminum (purity 99.5%,200mesh)were blended with nominal composition of Fe-40at.% 2O 3powder (purity 99.9%,2m)was added to the Fe-Al mixture with the amount of 0wt.%，1wt.%,3wt.%and 5wt.%,respectively.The four mixtures with symbols 0E,1E,3E,5E were ball milled for 50h in a high energy planetary ball-mill (QM-1SP2,Nanjing University)followed by sintering in a vacuum hot-press (ZRYS,Shenyang Weitai).Four samples underwent the same ball-milling and hot-pressing process.To avoid adhesion of particles to the ball and inner wall of the jar during mechanical alloying process,some organic solvent was added to the blended powders before milling.The weight ratio of the ball-to-powder was 10:1,and the ro-tation speed was set to 480r/min.Fig.1shows the sintering parameters of the four MAed powders.1.2Performance t estingThe sintered samples were cut with a diamond saw into different size of specimens for testing.The density was meas-:10.101/1002-07210808-1032J OURNAL OF RARE EARTHS,Vol.27,No.6,Dec.2009Fig.1Hot-press sintering parameters of the four MAed powders ured by Archimedes’method,and compared with theoretical density of FeAl alloy(5.56g/cm3)to get the relative density. Hardness was examined by Vickers hardness tester (HV-50A,China)under a load of98N for20s,and the av-erage hardness was obtained from5measurements for each specimen.The phase composition of the specimens was de-termined by X-ray diffractometer(XRD-6000,Shimadzu, Japan)using Cu Kαradiation.Element concentration distri-butions was detected by X-ray fluorescence spectrometer (XRF-1800,Shimadzu,Japan)and electron probe micro-analysis(EPMA-1600,Shimadzu,Japan)with a voltage of 15kV and a current of50nA;more detailed microstructural characteristics were observed by scanning electron micros-copy with X-ray energy disperse spectroscopy(SEM-EDS, JSM-5600LV,Jeol,Japan).And the worn surface mor-phologies were analyzed by optical microscope(OM, Olympus2000,Japan),SEM and EDS.1.3Wear testWear experiment was carried out on a self-designed pin on disk-high temperature friction machine shown in Fig.2. The sintered FeAl sample with a dimension ofΦ65mm×5mm was driven to rotate by a motor underneath,and the rotation speed was200r/min.The coupled material was a commer-cial available DC-Arc-Plasma-Jet chemical vapor deposition (CVD)diamond films with a surface roughness of Ra16.9m on the growth surface(Hebei Institute of Laser,China), which was fixed by the clamp and pressed against the sin-tered FeAl sample under load p.The distance r between two axis lines was invariable.The FeAl sample and diamond film were surrounded by the heating setups and heated to 600°C.Friction f between diamond and FeAl sample was meas-ured real time by piezoelectric force sensor.So friction co-efficient was obtained by=f/p(1) where f is the friction in N and p is the load in N.The wornmassm of the samples were evaluated by electric-balance(resolution0.01mg),and the average wear rate R W was cal-culated by the equationR W=m/(ρt)(2)where R W is the average wear rate in mm3/h,m is the wornmass in mg,ρis the measured Archimedes’density ing/cm3and t is the friction time in h.2Results and discussion2.1Str ucture and phase compositionFig.3shows XRD patterns of ball-milled powders for50h,which indicated that the four kinds of powders all trans-formed totally into single phase powders-α-Fe(Al)solid so-lution,which accorded with the Ref.[13].And due to thetiny amount,La2O3was not detected in Fe(Al)XRD pat-terns.The microstructure of the four kinds of powders isshown in Fig.4.During50h of ball-milling processes,theoriginal particles were exposed to repeated extruding,plasticdeformation,cold welding,fracturing,and rewelding[14],andfinally formed uniform and fine lamellar structure with grainsize of20m.No obvious change is found in the ball-milled powders with different contents of La2O3but someparticles gather in5E sample.Therefore rear earth La2O3hasno distinct influence on mechanical alloying procedure.Fig.2Schematic illustration of the friction and weartestFig.3XRD patterns of the ball-milled powdersMA Xingwei et al.,Effect of La 2O 3on microstructure and high-temperature wear property of hot-press sintering FeAl …1033Fig.4Microstructure of ball-milled powders(a)0E;(b)1E;(c)3E;(d)5ETable 1shows XRF results of sintered samples,indicating that sintered samples had the same element percent content with the starting powders.XRD patterns of sintered samples in Fig.5show that four samples are all made up of B2-FeAl phase,and have narrow peaks compared with the broadened Fe(Al)peaks of the MAed powders,which indicated that after 3h of sintering,the MAed α-Fe(Al)solid solution has totally transformed into FeAl intermetallic compound.Fig.6shows SEM images of sintered samples,which ob-viously indicates that samples 1E and 3E have the most compacted microstructure.Sample 1E has finer grains and sample 3E has more compact microstructure but has some bigger pits,sample 5E has the coarsest grains followed byTable 1XRF analysis results of sintered samplesSamples w Fe /wt.%w A l /wt.%w La /wt.%Impurity *Poss ible composition 0E 68.9529.800Bal.FeAl1E 69.3029.590.78Bal.FeAl-1%La 2O 33E69.7527.272.30Bal.FeAl-3%La 2O 35E 68.4027.55 3.94Bal.FeAl-5%La 2O 3*Because of the tiny amount in the alloys and its small atom weight,oxygen ele-ment was class ified into impurityFig.5XRD patterns of sintered samples0E sample.The results are consistent with the density values of the alloys measured with Archimedes principle (Fig.7).Because of the large ion radii and extremely low solid solu-bility in the alloy,the RE are dispersed between Fe(Al)par-ticles during mechanical alloying,with the Fe(Al)particles refined,the fine La 2O 3is sandwiched within the Fe(Al)la-mellae.When hot-pressing is applied to fine MAed particles,intense diffusion is carried on between iron and aluminum atoms and long-term ordered B2-FeAl lattice formed,but with the presence of the La 2O 3with high melting-point (up to 2250°C)and low solid solubility in the alloy,growth of the FeAl grains is inhibited,leading to finer microstruc-ture [12,15,16].With the effect of grain refinement and sintering activity,proper La 2O 3can enhance sintering activity and diffusion process during sintering,thus increased the relative density of the alloy [15,17].Fig.8shows lanthanum element face distribution images of sintered samples 1E and 5E,it is obvious that proper ad-dition of La 2O 3(Fig.81E)brings about even and dispersed distribution of RE,which blocks grain boundaries and re-sults grains refinement (Fig.6(b))[17].On the contrary,ex-cessive La 2O 3(Fig.85E)will lead to gathering of RE at grain boundaries,baffling the diffusion process,and wors-ening sintering characteristics of alloy powders,resulting in uneven microstructure with lots of porosities and pits (Fig.6(d)).2.2Har dnessFig.7shows hardness of the sintered FeAl alloy with dif-ferent contents of La 2O 3.It can be seen that proper amount of La 2O 3addition does not decrease FeAl alloy ’s hardness,or even slightly increase its hardness.However,excessive amount of La 2O 3addition would cause drop and nonuni-formity of hardness greatly.Due to small solid solubilityofFig.6SEM images of sintered samples();();()3;()5a 0E b 1E c E d E1034J OURNAL OF RARE EARTHS,Vol.27,No.6,Dec.2009Fig.7Hardness and relative density of sintered samples against REcontentFig.8Lanthanum element face distribution images of sinteredsamples 1E (a)and 5E (b)rare earth in FeAl alloys,La 2O 3mainly existed at grain boundaries.When suitable amount of La 2O 3is added,grain boundary is strengthened and toughened [17].On the contrary,too much accumulation of rare earth La 2O 3at grain bounda-ries will result in insufficient sintering and the appearance of porosities in FeAl matrix,which is closely related to the de-crease of density and hardness.2.3Wear char acter isticsFig.9shows variation of friction coefficient against slid-ing time of sintered FeAl alloys at 600°C.It can be easilyseen that the friction coefficients keep stable and smooth against sliding time,and gradually reduce with the increase of La 2O 3content.0E sample has the highest friction coeffi-cient and 5E sample possesses the lowest.The wear rate of the four samples is shown in Fig.10,which obviously indicates that samples 1E and 3E have the best wear resistance,which is only about 1/6of the wear rate of sample 0E.However,the wear rate of sample 5E is 1.4times of sample 0E,so sample 5E has the worst wear resis-tance.Fig.11shows wear morphology of the four samples.It can be easily found that samples 1E and 3E have uniform and smooth worn surface,while samples 0E and 5E have relatively rough surface with many holes and scratches.So a conclusion can be drawn based on the analyses of density,hardness,friction coefficient,worn mass and worn surface topography,that wear resistance of the alloys is connected closely with densification,and has little relationship with hardness,which is consistent with researches of Wang et al.[9]When the sintered alloy is dense,the bonding of the materials is strong and tough,and there are little porosities in the alloy matrix (Fig.6(b)and (c)),so the alloy has per-fect wear resistance (Fig.101E and 3E).On the other hand,when the alloy with incompact structure is exposed to the abrading of coupled diamond film with a roughness of RaFig.9Variation of friction coefficient against friction time(1)0E;(2)1E;(3)3E;(4)5EFig.10Wear rate of four samplesMA Xingwei et al.,Effect of La 2O 3on microstructure and high-temperature wear property of hot-press sintering FeAl …1035Fig.11Optical morphology of the worn surface(a)0E;(b)1E;(c)3E;(d)5EFig.12(a)Typical SEM topography with (b)local magnified image and (c)EDS images of the worn surface (1E)16.9m and extremely high hardness,the contact part of the alloy is easily scratched out and leaves a rough worn surface with many holes and furrows (Fig.11(a)and (d)),which correspond with a bad wear resistance (Fig.105E).As for friction coefficient,it has close relationship with RE content,more RE content accounts for lower friction coefficient,but it does not mean better wear resistance,though it is common that lower friction coefficient implies better wear resistance.So it can be concluded that the wear resistance of FeAl based alloy to diamond at high temperature is closely related to its density rather than hardness,as compared with ex-tremely hard counterpart diamond,the hardness change of the FeAl based alloy is not sensitive.Fig.12shows typical morphologies and EDS images of the worn surface (1E),it is easily observed that sample 1E presents uniform and smooth worn surface and exhibits a melting-flow pattern (Fig.12(b)),which can be attributed to local melting of the surface layer material caused by the combination of high temperature and friction heat.However,alloy without RE addition shows rough worn surface with many micro-furrows and scales (Fig.11).EDS spectrum (Fig.12(c))indicates that the worn surface is composed of O,Fe and Al elements.From Figs.11and 12,conclusion can be drawn that the main wear mechanisms are micro-ploughing and local melting combined with oxidation.3Conclusions(1)With 1wt.%–3wt.%of rare earth oxide La 2O 3addi-tion,the microstructure of FeAl intermetallic compound was f y ,y the high-temperature wear resistance.(2)The refinement of microstructure was attributed to dis-persed distribution of fine La 2O 3particles at FeAl grain boundaries,which inhibited grain growth during hot-press-ing process and led to fine microstructure.(3)The friction coefficient decreased with the increasing of RE content,and 1wt.%–3wt.%RE addition remarkably improved the wear resistance of the alloy though the hard-ness had little increase.The wear resistance of FeAl based alloy to diamond at high temperature was closely related to the density rather than the hardness,as compared with ex-tremely hard counterpart diamond,the hardness change of the FeAl based alloy was not sensitive.(4)The main wear mechanisms were micro-ploughing and local melting combined with oxidation.References:[1]Liu C T,George E P,Maziasz P J,Schneibel J H.Recent ad-vances in B2iron aluminide alloys:deformation,fracture and alloy design.Materials Science and Engineering,1998,A258:84.[2]Alman D E,Hawk J A,Tylczak J H,D gan C P,Wilson R D.Wear of iron-aluminide intermetallic-based alloys and com-posites by hard particles.Wear,2001,251:875.[3]Deevi S C,Sikka V K.Nickel and iron aluminides:an over-view on properties,processing and applications.Intermetallics,1996,4:357.[4]David G.Morris,Maria A.Munoz-Morris,Jesus Chao.De-velopment of high strength,high ductility and high creep re-sistant iron aluminide.Intermetallics,2004,12:821.[5]R ,B R G,S D S ff f re ined and its densit increased correspondingl improvedadhakrishna A aligidad arma .E ect o carbon1036J OURNAL OF RARE EARTHS,Vol.27,No.6,Dec.2009on structure and properties of FaAl based intermetallic alloy.Scripta Materialia,2001,45:1077.[6]Stoloff N S,Liu C T.Environmental embrittlement of ironaluminides.Intermetallics,1994,2:75.[7]Morris M A,Morris D G.Dispersoid additions and their effecton high temperature deformation of Fe-Al.Acta Metallurgica et Materialia,1990,38:551.[8]Zhang W J,Sundar R S,Deevi S C.Improvement of the creepresistance of FeAl-based alloys.Intermetallics,2004,12:893.[9]Wang Y,Yan M.The effect of CeO2on the erosion and abra-sive wear of thermal sprayed FeAl intermetallic alloy coatings.Wear,2006,261:1201.[10]Cui Xianghong,Wang Shuqi,Jiang Qichuan,Chen Kangmin.Research on thermal wear of cast hot forging die steel modi-fied by rare earths.Journal ofRare Earths,2007,25:88. [11]Yang C T,Koo C H.Improving the microstructure and hightemperature properties of the Ti-40Al-16Nb alloy by the addi-tion of a minor Sc or La-rich Misch metal.Intermetallics, 2004,12:235.[12]Wang K L,Zhang Q B,Sun M L,Wei X G,Zhu Y M.Micro-structure and corrosion resistance of laser clad coatings with rare earth elements.Corrosion Science,2001,43:255. [13]Krasnowski M,Witek A,Kulik T.The FeAl-30%TiC nano-composite produced by mechanical alloying and hot-pressing consolidation.Intermetallics,2002,10:371.[14]Suryanarayana C,Ivanov E,Boldyrev V V.The science andtechnology of mechanical alloying.Materials Science and En-gineering,2001,A304-306:151.[15]Guo J T,Huai K W,Gao Q,Ren W L,Li G S.Effects of rareearth elements on the microstructure and mechanical proper-ties of NiAl-based eutectic alloy.Intermetallics,2007,15: 727.[16]Liu Xiubo,Yu Rongli.Effects of La2O3on microstructure andwear properties of laser cladγ/Cr7C3/TiC composite coatings on TiAl intermetallic alloy.Materials Chemistry and Physics, 2007,101:448.[17]Mu Baichun,Sun Xudong.Effect of rare earths on sinteringtemperature,microstructure and mechanical properties of Al2O3ceramics.Journal ofthe Chinese Rare Earth Society(in Chin.),2002,20:104.。
Infineon TLI4971高精度无核电流传感器说明书
TLI4971 high precision coreless current sensor for industrial applications in 8x8mm SMD packageFeatures & Benefits∙ Integrated current rail with typical 220µΩ insertion resistance enables ultra-low power loss∙ Smallest form factor, 8x8mm SMD, for easy integration and board area saving∙ High accurate, scalable, DC & AC current sensing ∙ Bandwidth typical 240kHz enables wide range of applications∙ Very low sensitivity error over temperature (< 2.5%) ∙ Galvanic functional isolation up to 1150V peak V IORM ∙ V ISO 3500V RMS agency type-tested for 60 seconds per UL1577∙ Differential sensor principle ensures superior magnetic stray field suppression∙ Two independent fast Over-Current Detection (OCD)outputssCoreless current sensor in PG-TISON-8 packageDescriptionTLI4971 is a high precision miniature coreless magnetic current sensor for AC and DC measurements with analog interface and two fast over-current detection outputs.Infineon's well-established and robust monolithic Hall technology enables accurate and highly linear measurement of currents with a full scale up to ±120A. All negative effects (saturation, hysteresis) commonly known from open loop sensors using flux concentration techniques are avoided. The sensor is equipped with internal self-diagnostic feature.Typical applications are electrical drives and general purpose inverters.The differential measurement principle allows great stray field suppression for operation in harsh environments.Two separate interface pins (OCD) provide a fast output signal in case a current exceeds a pre-set threshold.The sensor is shipped as a fully calibrated product without requiring any customer end-of-line calibration.All user-programmable parameters such as OCD thresholds, blanking times and output configuration modes are stored in an embedded EEPROM memory.2) Semi-differential mode, non-ratiometric output sensitivityPin ConfigurationFigure 1 Pin layout PG-TISON-8-5The current I PN is measured as a positive value when it flows from pin 8 (+) to pin 7 (-) through the integrated current rail.Pin configurationTarget ApplicationsThe TLI4971 is suitable for AC as well as DC current measurement applications: ∙ Electrical drives∙ General purpose inverters ∙ Chargers∙ Current monitoring∙ Overload and over-current detection ∙ etc.Due to its implemented magnetic interference suppression, it is extremely robust when exposed to external magnetic fields. The device is suitable for fast over-current detection with a configurable threshold level. This allows the control unit to switch off and protect the affected system from damage, independently from the main measurement path.1 2 3 456 78+- I PNGeneral DescriptionThe current flowing through the current rail on the primary side induces a magnetic field that is differentially measured by two Hall probes. The differential measurement principle of the magnetic field combined with the current rail design provides superior suppression of any ambient magnetic stray fields. A high performance amplifier combines the signal resulting from the differential field and the internal compensation information provided by the temperature and stress compensation unit. Finally the amplifier output signal is fed into a differential output amplifier which is able to drive the analog output of the sensor.Depending on the selected programming option, the analog output signal can be provided either as: ∙Single-ended∙Fully-differential∙Semi-differentialIn single-ended mode, the pin VREF is used as a reference voltage input. The analog output signal is provided on pin AOUT. In fully-differential mode, both AOUT (positive polarity) and VREF (negative polarity) are used as signal outputs whereas VDD is used as reference voltage input. Compared to the single-ended mode, the fully-differential mode enables doubling of the output voltage swing.In semi-differential mode a chip-internal reference voltage is used and provided on VREF (output). The current sensing information is provided in a single-ended way on AOUT.For fast over-current detection, the raw analog signal provided by the Hall probes is fed into comparators with programmable switching thresholds.A user-programmable deglitch filter is implemented to enable the suppression of fast switching transients. The open-drain outputs of the OCD pins are active “low” and they can be directly combined into a wired-AND configuration on board level to have a general over-current detection signal.All user-programmable parameters such as OCD thresholds, deglitching filter settings and output configuration mode are stored in an embedded EEPROM memory.Programming of the memory can be performed in the application through a Serial Inspection and Configuration Interface (SICI). The interface is descripded in detail in the programming guide which can be found on the Infineon webside. Please contact your local Infineon sales office for further documentation. Standard Product Configuration∙The pre-configured full scale range is either set to ±120A, ±75A, ±50A or ±25A depending on the choosen product variant.∙The pre-configured output mode is set to semi-differential mode.∙The quiescent voltage is set to 1.65V.∙The OCD threshold of channel 1 is set to the factor 1.25 of the full scale range.∙The OCD threshold of channel 2 is set to the factor 0.82 of the full scale range.∙The pre-defined setting of the OCD deglitching filter time is set to 0µs.∙The sensor is pre-configured to work in the non-ratiometric mode.∙The sensitivity and the derived measurement range (full scale) can be reprogrammed by user according to the sensitivity ranges listed in Table 4.∙The sensor can be reprogrammed into single-ended operating mode or fully-differential mode by user without any recalibration of the device.∙The OCD thresholds and filter settings can be reprogrammed by the user according to the values listed in Table 6 and Table 7.∙For semi-differential uni-directional mode or ratiometric output sensitivity, please contact your local Infineon sales office.Block DiagramThe current flowing through the current rail on the primary side induces a magnetic field, which is measured by two Hall probes differentially. The differential measurement principle provides superior suppression of any ambient magnetic stray fields. A high performance amplifier combines the signal resulting from the differential field and the compensation information, provided by the temperature and stress compensation unit. Finally the amplifier output signal is fed into a differential output amplifier, which is able to drive the analog output of the sensor.Absolute Maximum RatingsTable 1 Absolute Maximum RatingsThermal equilibrium reached after 2 min.2)Tested with primary nominal rated current of 70A rms on Infineon reference PCB at High Frequency (HF).Thermal equilibrium reached after 2 min.3)Human Body Model (HBM), according to standard AEC-Q 100-0024)Accor ding to standard IEC 61000−4−2 e lectrostatic discharge immunity testStress above the limit values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings. Exceeding only one of these values may cause irreversible damage to the integrated circuit.Product Characteristics Table 2 Operating RangesTable 3 Operating ParametersFunctional Output DescriptionThe analog output signal depends on the selected output mode:∙Single-ended∙Fully-differential∙Semi-differentialSingle-Ended Output ModeIn single-ended mode VREF is used as an input pin to provide the analog reference voltage, V REF. The voltage on AOUT, V AOUT, is proportional to the measured current I PN at the current rail:V AOUT(I PN)=V OQ+S∙I PNThe quiescent voltage V OQ is the value of V AOUT when I PN=0. V OQ tracks the voltage on VREFV OQ(V REF)=V REFThe reference voltage can be set to different values which allow either bidirectional or uniderictional current sensing. The possible values of V REFNOM are indicated in Table 2.The sensitivity is by default non ratiometric to V REF. If ratiometricity is activated the sensitivity becomes as follows:S(V REF)=S(V REFNOM)∙V REF V REFNOMFully-Differential Output ModeIn fully-differential output mode, both VREF and AOUT are analog outputs to achieve double voltage swing: AOUT is the non-inverting output, while VREF is the inverting output:V AOUT(I PN)=V QAOUT+S∙I PNV REF(I PN)=V QREF−S∙I PNThe quiescent voltage is derived from the supply pins VDD and GND and has the same value on both AOUT and VREF:V QAOUT(V DD)=V QREF(V DD)=V DD2The sensitivity in the fully-differential mode can begenerally expressed as:S(V DD)diff=S(3.3V)diff∙V DD3.3VIn this mode, the quiescent voltages and thesensitivity are both ratiometric with respect to V DDif ratiometricity is enabled.Semi-Differential Output ModeIn semi-differential output mode, the sensor isusing a chip-internal reference voltage to generatethe quiescent voltage that is available on pin VREF(used as output).The analog measurement result is available assingle-ended output signal on AOUT. Thedependence of sensitivity and output offset onreference voltage is the same as described in single-ended output mode.The quiescent voltage is programmable at 3different values, V OQbid_1and V OQbid_2forbidirectional current and V OQuni for unidirectionalcurrent (see Table 4).Total error distributionFigure 3 shows the total output error at 0h (E TOTT)and over lifetime (E TOTL) over the full scale range forsensitivity range S1 (10mV/A).Table 4 Analog Output Characteristics2) Can be programmed by user.3) Values refer to semi-differential mode or single-ended mode, with VREF =1.65 V. In fully-differential mode the sensitivity value is doubled.4) Not subject to production test. Verified by design and characterization.5) Typical value in fully-differential mode, sensitivity range S66) Noise Density=RMS√ π2 ∗ BW[Hz]1Sensitivity[VA]Table 4 Analog Output Characteristics (cont’d)Fast Over-Current Detection (OCD)The Over-Current Detection (OCD) function allows fast detection of over-current events. The raw analog output of the Hall probes is fed directly into comparators with programmable switching thresholds. A user programmable deglitch filter is implemented to enable the suppression of fast switching transients. The two different open-drain OCD pins are active low and can be directly combined into a wired-AND configuration on board level to have a general over-current detection signal. TLI4971 supports two independent programmable OCD outputs, suited for different application needs.The OCD pins are providing a very fast response, thanks to independence from the main signal path. They can be used as a trap functionality to quickly shut down the current source as well as for precise detection of soft overload conditions.OCD pins external connectionThe OCD pins can be connected to a logic input pin of the microcontroller and/or the gate-driver to quickly react to over-current events. They are designed as open-drain outputs to easily setup a wired-AND configuration and allow monitoring of several current sensors outputs via only one microcontroller pin. OCD thresholdsThe symmetric threshold level of the OCD outputs is adjustable and triggers an over-current event in case of a positive or negative over-current. The possible threshold levels are listed in Table 6 and Table 7. The instruction for the settings is documented in the TLI4971 programming guide. OCD outputs timing behaviorBoth output pins feature a deglitch filter to avoid false triggers by noise spikes on the current rail. Deglitch filter settings can be programmed according to application needs. Available options are listed in Table 6 and Table 7.Figure 4 shows the OCD output pin typical behavior during an over-current event.Over-current Pulse 1: duration exceeds the over-current response time t D_OCDx + response time jitter Δt D_OCDx + deglitch filter time t deglitch. The OCD output voltage is set low until the current value drops below the OCD threshold.Over-current Pulse 2: duration does not exceed the over-current response time t D_OCDx and therefore no OCD event is generated.Over-current Pulse 3: duration exceeds the response time t D_OCDx + response time jitter Δt D_OCDx, but does not exceed the glitch filter time t deglitch and no OCD event is generated.Fast Over-Current Detection (OCD) Output ParametersTable 5 Common OCD Parameters2) Can be programmed by user.3) Pre-configured threshold level4) Time between primary current exceeding current threshold and falling edge of OCD1-pin at 50%.5) Not subject to production test. Verified by design and characterization.6) The specified deglitching timing is valid when input current step overtakes the threshold of at least 10%.2) Can be programmed by user.3) Pre-configured threshold level.4) Time between primary current exceeding current threshold and falling edge of OCD2-pin at 50%.5) Not subject to production test. Verified by design and characterization.6) The specified deglitching timing is valid when input current step overtakes the threshold of at least 10%.Undervoltage / Overvoltage detectionTLI4971 is able to detect undervoltage or overvoltage condition of its own power supply (V DD). When an undervoltage (V DD<U VLOH) or overvoltage (V DD>O VLOH) condition is detected both OCD pins are pulled down in order to signal such a condition to the user.The undervoltage detection on OCD pins is performed only if V DD > V DD,OCD.Both OCD pins are pulled down at start up. When V DD exceeds the undervoltage threshold U VLOH_R and the power on delay time t POR has been reached, the sensor indicates the correct functionality and high accuracy by releasing the OCD pins.Isolation CharacteristicsTLI4971 conforms functional isolation.2) After stress test according to qualification plan.3) Not subject to production test. Verified by design and characterization.4) Agency type tested for 60 seconds by UL according to UL 1577 standard.System integrationFor bandwidth limitation an external filter is recommended as shown in the above application circuits.Typical Performance CharacteristicsFigure 8 Typical error in sensitivity over temperature Figure 9 Typical offset drift over temperaturePackageThe TLI4971 is packaged in a RoHS compliant, halogen-free leadless package (QFN-like). PG-TISON-8 Package OutlineRevision HistoryMajor changes since the last revisionPublished byInfineon Technologies AG 81726 München, Germany © 2021 Infineon Technologies AG. All Rights Reserved.Do you have a question about this document?Email: ********************Document reference IMPORTANT NOTICEThe information given in this document shall in no event be regarded as a guarantee of conditions or chara cteristics (“Beschaffenheitsgarantie”) .With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document withFor further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( ).WARNINGSDue to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.Edition 12-02-2021----Trademarks of Infineon Technologies AGµHVIC™, µIPM™, µPFC™, AU -ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI -POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my -d ™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO -SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners.。
美国国家自然科学基金
IPC-7351B & PCBL Land Pattern Naming Convention
I P C-7351B N a m i n g C o n v e n t i o n f o r S t a n d a r d S M T L a n d P a t t e r n sSurface Mount Land PatternsComponent, Category Land Pattern Name Ball Grid Array’s...............................BGA + Pin Qty + C or N + Pitch P + Ball Columns X Ball Rows _ Body Length X Body Width X Height BGA w/Dual Pitch.BGA + Pin Qty + C or N + Col Pitch X Row Pitch P + Ball Columns X Ball Rows _ Body Length X Body Width X Height BGA w/Staggered Pins..................BGAS + Pin Qty + C or N + Pitch P + Ball Columns X Ball Rows _ Body Length X Body Width X Height BGA Note: The C or N = Collapsing or Non-collapsing BallsCapacitors, Chip, Array, Concave..........................................................CAPCAV + Pitch P + Body Length X Body Width X Height - Pin Qty Capacitors, Chip, Array, Flat..................................................................CAPCAF + Pitch P + Body Length X Body Width X Height - Pin Qty Capacitors, Chip, Non-polarized.................................................................................................CAPC + Body Length + Body Width X Height Capacitors, Chip, Polarized.....................................................................................................CAPCP + Body Length + Body Width X Height Capacitors, Chip, Wire Rectangle........................................................................................CAPCWR + Body Length + Body Width X Height Capacitors, Molded, Non-polarized...........................................................................................CAPM + Body Length + Body Width X Height Capacitors, Molded, Polarized.................................................................................................CAPMP + Body Length + Body Width X Height Capacitors, Aluminum Electrolytic ............................................................................................................CAPAE + Base Body Size X Height Ceramic Flat Packages.....................................................................................................CFP127P + Lead Span Nominal X Height - Pin Qty Column Grid Array’s.....................................................CGA + Pitch P + Number of Pin Columns X Number of Pin Rows X Height - Pin Qty Crystals (2 leads)........................................................................................................................XTAL + Body Length X Body Width X Height Dual Flat No-lead..........................................................................................................DFN + Body Length X Body Width X Height – Pin Qty Diodes, Chip................................................................................................................................DIOC + Body Length + Body Width X Height Diodes, Molded...........................................................................................................................DIOM + Body Length + Body Width X Height Diodes, MELF................................................................................................................................DIOMELF + Body Length + Body Diameter Fuses, Molded............................................................................................................................FUSM + Body Length + Body Width X Height Inductors, Chip.............................................................................................................................INDC + Body Length + Body Width X Height Inductors, Molded........................................................................................................................INDM + Body Length + Body Width X Height Inductors, Precision Wire Wound................................................................................................INDP + Body Length + Body Width X Height Inductors, Chip, Array, Concave..............................................................INDCAV + Pitch P + Body Length X Body Width X Height - Pin Qty Inductors, Chip, Array, Flat......................................................................INDCAF + Pitch P + Body Length X Body Width X Height - Pin Qty Land Grid Array, Round Lead............................LGA + Pin Qty - Pitch P + Pin Columns X Pin Rows _ Body Length X Body Width X Height Land Grid Array, Square Lead........................LGAS + Pin Qty - Pitch P + Pin Columns X Pin Rows _ Body Length X Body Width X Height LED’s, Molded............................................................................................................................LEDM + Body Length + Body Width X Height Oscillators, Side Concave........................................................................OSCSC + Pitch P + Body Length X Body Width X Height - Pin Qty Oscillators, J-Lead.......................................................................................OSCJ + Pitch P + Body Length X Body Width X Height - Pin Qty Oscillators, L-Bend Lead.............................................................................OSCL + Pitch P + Body Length X Body Width X Height - Pin Qty Oscillators, Corner Concave....................................................................................................OSCCC + Body Length X Body Width X Height Plastic Leaded Chip Carriers..................................................PLCC + Pitch P + Lead Span L1 X Lead Span L2 Nominal X Height - Pin Qty Plastic Leaded Chip Carrier Sockets Square.......................PLCCS + Pitch P + Lead Span L1 X Lead Span L2 Nominal X Height - Pin Qty Quad Flat Packages..................................................................QFP + Pitch P + Lead Span L1 X Lead Span L2 Nominal X Height - Pin Qty Ceramic Quad Flat Packages.................................................CQFP + Pitch P + Lead Span L1 X Lead Span L2 Nominal X Height - Pin Qty Quad Flat No-lead................................................................QFN + Pitch P + Body Width X Body Length X Height - Pin Qty + Thermal Pad Pull-back Quad Flat No-lead..............................................PQFN + Pitch P + Body Width X Body Length X Height - Pin Qty + Thermal Pad Quad Leadless Ceramic Chip Carriers..........................................................LCC + Pitch P + Body Width X Body Length X Height - Pin Qty Quad Leadless Ceramic Chip Carriers (Pin 1 on Side)...............................LCCS + Pitch P + Body Width X Body Length X Height - Pin Qty Resistors, Chip...........................................................................................................................RESC + Body Length + Body Width X Height Resistors, Molded......................................................................................................................RESM + Body Length + Body Width X Height Resistors, MELF...........................................................................................................................RESMELF + Body Length + Body Diameter Resistors, Chip, Array, Concave............................................................RESCAV + Pitch P + Body Length X Body Width X Height - Pin Qty Resistors, Chip, Array, Convex, E-Version (Even Pin Size)...............RESCAXE + Pitch P + Body Length X Body Width X Height - Pin Qty Resistors, Chip, Array, Convex, S-Version (Side Pins Diff)................RESCAXS + Pitch P + Body Length X Body Width X Height - Pin Qty Resistors, Chip, Array, Flat.....................................................................RESCAF + Pitch P + Body Length X Body Width X Height - Pin Qty Small Outline Diodes, Flat Lead...................................................................................SODFL + Lead Span Nominal + Body Width X Height Small Outline IC, J-Leaded........................................................................................SOJ + Pitch P +Lead Span Nominal X Height - Pin Qty Small Outline Integrated Circuit, (50 mil Pitch SOIC)......................................................SOIC127P +Lead Span Nominal X Height - Pin Qty Small Outline Packages............................................................................................SOP + Pitch P +Lead Span Nominal X Height - Pin Qty Small Outline No-lead...........................................................SON + Pitch P + Body Width X Body Length X Height - Pin Qty + Thermal Pad Pull-back Small Outline No-lead.........................................PSON + Pitch P + Body Width X Body Length X Height - Pin Qty + Thermal Pad Small Outline Transistors, Flat Lead....................................................................SOTFL + Pitch P + Lead Span Nominal X Height - Pin Qty SOD (Example: SOD3717X135 = JEDEC SOD123)........................................................SOD + Lead Span Nominal + Body Width X Height SOT89 (JEDEC Standard Package).......................................................................................................................................................SOT89 SOT143 & SOT343 (JEDEC Standard Package)..............................................................................................................SOT143 & SOT343 SOT143 & SOT343 Reverse (JEDEC Standard Package)...........................................................................................SOT143R & SOT343R SOT23 & SOT223 Packages (Example: SOT230P700X180-4)...............................SOT + Pitch P + Lead Span Nominal X Height - Pin Qty TO (Generic DPAK - Example: TO228P970X238-3).................................................................TO + Pitch P + Lead Span X Height - Pin QtyI P C-7351B L a n d P a t t e r n N a m i n g C o n v e n t i o n N o t e s•All dimensions are in Metric Units•All Lead Span and Height numbers go two places past the decimal point and “include” trailing Zeros•All Lead Span and Body Sizes go two place before the decimal point and “remove” leading Zeros•All Chip Component Body Sizes are one place to each side of the decimal point•Pitch Values are two places to the right & left of decimal point with no leading Zeros but include trailing zeros N a m i n g C o n v e n t i o n S p e c i a l C h a r a c t e r U s e f o r L a n d P a t t e r n sThe _ (underscore) is the separator between pin Qty in Hidden & Deleted pin componentsThe – (dash) is used to separate the pin qty.The X (capital letter X) is used instead of the word “by” to separate two numbers such as height X width like “Quad Packages”.P C B L i b r a r i e s S u f f i x N a m i n g C o n v e n t i o n f o r L a n d P a t t e r n sCommon SMT Land Pattern to Describe Environment Use (This is the last character in every name)Note: This excludes the BGA component family as they only come in the Nominal Environment Condition •M.................Most Material Condition (Level A)•N..................Nominal Material Condition (Level B)•L.................Least Material Condition (Level C)Alternate Components that do not follow the JEDEC, EIA or IEC Standard•A..................Alternate Component (used primarily for SOP & QFP when Component Tolerance or Height is different) •B..................Second Alternate ComponentReverse Pin Order•-20RN..........20 pin part, Reverse Pin Order, Nominal EnvironmentHidden Pins•-20_24N......20 pin part in a 24 pin package. The pins are numbered 1 – 24 the hidden pins are skipped. The schematic symbol displays up to 24 pins.Deleted Pins•-24_20N......20 pin part in a 24 pin package. The pins are numbered 1 – 20. The schematic symbol displays 20 pins. JEDEC and EIA Standard parts that have several alternate packages•AA, AB, AC.JEDEC or EIA Component IdentifierGENERAL SUFFIXES_HS.........................HS = Land Pattern with Heat Sink attachment requiring additional holes or padsExample: TO254P1055X160_HS-6N_BEC......................BEC = Base, Emitter and Collector (Pin assignments used for three pin Transistors)Example: SOT95P280X160_BEC-3N_SGD......................SGD = Source, Gate and Drain (Pin assignments used for three pin Transistors)Example: SOT95P280X160_SGD-3N_213........................213 = Alternate pin assignments used for three pin TransistorsExample: SOT95P280X160_213-3NP C B L i b r a r i e s N a m i n g C o n v e n t i o n f o r N o n-S t a n d a r d S M T L a n d P a t t e r n s Surface Mount Land PatternsComponent, Category Land Pattern Name Amplifiers....................................................................................................................................................AMP_ Mfr.’s Part Number Batteries......................................................................................................................................................BAT_ Mfr.’s Part Number Capacitors, Variable..................................................................................................................................CAPV_Mfr.’s Part Number Capacitors, Chip, Array, Concave (Pins on 2 or 4 sides)..............................................................CAPCAV_Mfr Series No. - Pin Qty Capacitors, Chip, Array, Flat (Pins on 2 sides)..............................................................................CAPCAF_Mfr Series No. - Pin Qty Capacitors, Miscellaneous............................................................................................................................CAP_Mfr.’s Part Number Crystals......................................................................................................................................................XTAL_Mfr.’s Part Number Diodes, Miscellaneous...................................................................................................................................DIO_Mfr.’s Part Number Diodes, Bridge Rectifiers............................................................................................................................DIOB_Mfr.’s Part Number Ferrite Beads..................................................................................................................................................FB_Mfr.’s Part Number Fiducials......................................................................................................................................FID + Pad Size X Solder Mask Size Filters..............................................................................................................................................................FIL_Mfr.’s Part Number Fuses..........................................................................................................................................................FUSE_Mfr.’s Part Number Fuse, Resettable.....................................................................................................................................FUSER_Mfr.’s Part Number Inductors, Miscellaneous...............................................................................................................................IND_Mfr.’s Part Number Inductors, Chip, Array, Concave (Pins on 2 or 4 sides)..................................................................INDCAV_Mfr Series No. - Pin Qty Inductors, Chip, Array, Flat (Pins on 2 sides).................................................................................INDCAF_Mfr Series No. - Pin Qty Keypad.................................................................................................................................................KEYPAD_Mfr.’s Part Number LEDS............................................................................................................................................................LED_Mfr.’s Part Number LEDS, Chip...................................................................................................................................................LED_Mfr.’s Part Number Liquid Crystal Display...................................................................................................................................LCD_Mfr.’s Part Number Microphones..................................................................................................................................................MIC_Mfr.’s Part Number Opto Isolators............................................................................................................................................OPTO_Mfr.’s Part Number Oscillators......................................................................................................................................OSC_Mfr.’s Part Number - Pin Qty Quad Flat Packages w/Bumper Corners, Pin 1 Side.............BQFP + Pitch P + Lead Span L1 X Lead Span L2 Nominal X Height - Pin Qty Quad Flat Packages w/Bumper Corners, 1 Center..............BQFPC + Pitch P + Lead Span L1 X Lead Span L2 Nominal X Height - Pin Qty Resistors, Chip, Array, Concave (Pins on 2 or 4 sides).................................................................RESCAV_Mfr Series No. - Pin Qty Resistors, Chip, Array, Convex Type E (Pins on 2 sides)...........................................................RESCAXE_Mfr Series No. - Pin Qty Resistors, Chip, Array, Convex Type S (Pins on 2 sides)...........................................................RESCAXS_Mfr Series No. - Pin Qty Resistors, Chip, Array, Flat (Pins on 2 sides)................................................................................RESCAF_Mfr Series No. - Pin Qty Relays.....................................................................................................................................................RELAY_Mfr.’s Part Number Speakers....................................................................................................................................................SPKR_Mfr’s Part Number Switches........................................................................................................................................................SW_Mfr.’s Part Number Test Points, Round......................TP + Pad Size (1 place left of decimal and 2 places right of decimal, Example TP100 = 1.00mm) Test Points, Square...............................................................TPS + Pad Size (1 place left of decimal and 2 places right of decimal) Test Points, Rectangle....................................TP + Pad Length X Pad Width (1 place left of decimal and 2 places right of decimal) Thermistors.............................................................................................................................................THERM_Mfr.’s Part Number Transceivers.............................................................................................................................................XCVR_ Mfr.’s Part Number Transducers (IRDA’s)................................................................................................................................XDCR_Mfr.’s Part Number Transient Voltage S_Mfr.’s Part Number Transient Voltage Suppressors, SP_Mfr.’s Part Number Transistor Outlines, Custom....................................................................................................................TRANS_Mfr.’s Part Number Transformers.............................................................................................................................................XFMR_Mfr.’s Part Number Trimmers & Potentiometers........................................................................................................................TRIM_Mfr.’s Part Number Tuners.....................................................................................................................................................TUNER_Mfr.’s Part Number Varistors.......................................................................................................................................................VAR_Mfr.’s Part Number Voltage Controlled Oscillators.....................................................................................................................VCO_Mfr.’s Part Number Voltage Regulators, Custom......................................................................................................................VREG_Mfr.’s Part NumberI P C-7251N a m i n g C o n v e n t i o n f o r T h r o u g h-H o l e L a n d P a t t e r n sThe land pattern naming convention uses component dimensions to derive the land pattern name.The first 3 – 6 characters in the land pattern name describe the component family.The first number in the land pattern name refers to the Lead Spacing or hole to hole location to insert the component lead.All numbers that follow the Lead Spacing are component dimensions.These characters are used as component body identifiers that precede the value and this is the priority order of the component body identifiers –P = Pitch for components with more than two leadsW = Maximum Lead Width (or Component Lead Diameter)L = Body Length for horizontal mountingD = Body Diameter for round component bodyT = Body Thickness for rectangular component bodyH = Height for vertically mounted componentsQ = Pin Quantity for components with more than two leadsR = Number of Rows for connectorsA, B & C = the fabrication complexity level as defined in the IPC-2221 and IPC-2222Notes:All component body values are in millimeters and go two places to the right of the decimal point and no leading zeros.All Complexity Levels used in the examples are “B”.Component, Category Land Pattern Name Capacitors, Non Polarized Axial Diameter Horizontal Mounting.........CAPAD + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: CAPAD800W52L600D150BCapacitors, Non Polarized Axial Diameter; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Capacitors, Non Polarized Axial Rectangular.........CAPAR + Lead Spacing + W Lead Width + L Body Length + T Body thickness + H Body Height Example: CAPAR800W52L600T50H70BCapacitors, Non Polarized Axial; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Thickness 0.50; Body Height 0.70Capacitors, Non Polarized Axial Diameter Vertical Mounting .........CAPADV + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: CAPADV300W52L600D150BCapacitors, Non Polarized Axial; Lead Spacing 3.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50mmCapacitors, Non Polarized Axial Rect. Vert. Mtg.CAPARV + Lead Spacing + W Lead Width + L Body Length + T Body Thickness + H Body Height Example: CAPARV300W52L600T50H70BCapacitors, Non Polarized Axial Rect. Vertical; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Thickness 0.50; Body Height 0.70 Capacitors, Non Polarized Radial Diameter.......................................CAPRD + Lead Spacing + W Lead Width + D Body Diameter + H Body Height Example: CAPRD200W52D300H550BCapacitors, Non Polarized Radial Diameter; lead spacing 2.00; lead width 0.52; Body Diameter 3.00; Height 5.50Capacitors, Non Polarized Radial Rectangular.......CAPRR + Lead Spacing + W Lead Width + L Body Length + T Body thickness + H Body Height Example: CAPRR200W52L50T70H550BCapacitors, Non Polarized Radial Rectangular; lead spacing 2.00; lead width 0.52; Body Length 0.50; Body thickness 0.70; Height 5.50 Capacitors, Non Polarized Radial Disk Button........CAPRB + Lead Spacing + W Lead Width + L Body Length + T Body thickness + H Body Height Example: CAPRB200W52L50T70H550BCapacitors, Non Polarized Radial Rectangular; lead spacing 2.00; lead width 0.52; Body Length 0.50; Body thickness 0.70; Height 5.50 Capacitors, Polarized Axial Diameter Horizontal Mounting................CAPPA + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: CAPPAD800W52L600D150BCapacitors, Polarized Axial Diameter; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Capacitor, Polarized Radial Diameter.................................................CAPPR + Lead Spacing + W Lead Width + D Body Diameter + H Body Height Example: CAPPRD200W52D300H550BCapacitors, Polarized Radial Diameter; lead spacing 2.00; lead width 0.52; Body Diameter 3.00; Height 5.50Diodes, Axial Diameter Horizontal Mounting.......................................DIOAD + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: DIOAD800W52L600D150BCapacitors, Non Polarized Axial Diameter; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Diodes, Axial Diameter Vertical Mounting .........................................DIOADV + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: DIOADV300W52L600D150BCapacitors, Non Polarized Axial; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Dual-In-Line Packages...................................DIP + Lead Span + W Lead Width + P Pin Pitch + L Body Length + H Component Height + Q Pin Qty Example: DIP762W52P254L1905H508Q14BDual-In-Line Package: Lead Span 7.62; Lead Width 0.52; Pin Pitch 2.54; Body Length 19.05; Body Height 5.08; Pin Qty 14Component, Category Land Pattern Name Dual-In-Line Sockets....................................DIPS + Lead Span + W Lead Width + P Pin Pitch + L Body Length + H Component Height + Q Pin Qty Example: DIPS762W52P254L1905H508Q14BDual-In-Line Package Socket: Lead Span 7.62; Lead Width 0.52; Pin Pitch 2.54; Body Length 19.05; Body Height 5.08; Pin Qty 14Headers, Vertical....... HDRV + Lead Span + W Lead Width + P Pin Pitch + R Pins per Row + L Body Length + T Body Thickness + H Component HeightExample: HDRV200W52P200R2L4400T400H900BHeader, Vertical: Lead Span 2.00; Lead Width 0.52; Pin Pitch 2.00; 2 Rows; Body Length 44.00; Body Thickness 4.00; Body Height 9.00 Headers, Right Angle...............HDRRA + Lead Span + W Lead Width + P Pin Pitch + R Pins per Row + L Body Length + T Body Thickness + H Component HeightExample: HDRRA200W52P200R2L4400T400H900BHeader, Vertical: Lead Span 2.00; Lead Width 0.52; Pin Pitch 2.00; 2 Rows; Body Length 44.00; Body Thickness 4.00; Body Height 9.00 Inductors, Axial Diameter Horizontal Mounting....................................INDAD + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: INDAD800W52L600D150BInductors, Axial Diameter; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Inductors, Axial Diameter Vertical Mounting .....................................INDADV + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: INDADV300W52L600D150BInductors, Axial Diameter Vertical Mounting; Lead Spacing 3.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Jumpers, Wire...................................................................................................................................................JUMP + Lead Spacing + W Lead Width Example: JUMP500W52BJumper; Lead Spacing 5.00; Lead Width 0.52Mounting Holes Plated With Support Pad..........................................................................MTGP + Pad Size + H Hole Size + Z Inner Layer Pad Size Example: MTGP700H400Z520This is a Mounting hole for a #6-32 screw using a circular 7.00 land on the primary and secondary side of the board, a 4.00 diameter hole with the internal lands are smaller that the external and are also circular 5.20 in diameter.Mounting Holes Non-Plated With Support Pad................................................................MTGNP + Pad Size + H Hole Size + Z Inner Layer Pad Size Example: MTGNP700H400Z520This is a Mounting hole for a #6-32 screw using a circular 7.00 land on the primary and secondary side of the board, a 4.00 diameter hole with the internal lands are smaller that the external and are also circular 5.20 in diameter.Mounting Holes Non-Plated Without Support Pad.....................MTGNP + Pad Size + H Hole Size + Z Inner Layer Pad Size + K Keep-out Diameter Example: MTGNP100H400Z520K700This is a Mounting hole for a #6-32 screw using a circular 1mm land on the primary and secondary side of the board, a 4.00 diameter hole with the internal lands are smaller that the external and are also circular 5.20 in diameter and a 7.00 diameter keep-out.Mounting Holes Plated with 8 Vias .....................................................................MTGP + Pad Size + H Hole Size + Z Inner Layer Pad Size + 8 Vias Example: MTGP700H400Z520V8This is a Mounting hole for a #6-32 screw using a circular 7mm land on the primary and secondary side of the board, a 4mm diameter hole with the internal lands are smaller that the external and are also circular 5.2mm in diameter, with 8 vias.Pin Grid Array’s.............................PGA + Pin Qty + P Pitch + C Pin Columns + R Pin Rows + L Body Length X Body Width + H Component Height Example: PGA84P254C10R10L2500X2500H300BPin Grid Array: Pin Qty 84; Pin Pitch 2.54; Columns 10; Rows 10; Body Length 25.00 X 25.00; Component Height 3.00Resistors, Axial Diameter Horizontal Mounting...................................RESAD + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: RESAD800W52L600D150BResistors, Axial Diameter; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Resistors, Axial Diameter Vertical Mounting ....................................RESADV + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: RESADV300W52L600D150BResistors, Axial Diameter Vertical Mounting; Lead Spacing 3.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Resistors, Axial Rectangular Horizontal Mounting...RESAR + Lead Spacing + W Lead Width + L Body Length + T Body thickness + H Body Height Example: RESAR800W52L600T50H70BResistors, Axial Rectangular; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Thickness 0.50; Body Height 0.70Test Points, Round Land......................................................................................................................................................................TP + Lead Width Example: TP52Test Points, Square Land..................................................................................................................................................................TPS + Lead Width Example: TPS52Test Points, Top Land Round & Bottom Land Square.....................................................................................................................TPRS + Lead Width Example: TPRS52 Wire....................................................................................................................................................................................................PAD + Wire Width Example: PAD52。
流光5.0破解密码教程
流光5.0破解密码教程流光5.0的使用方法1：流光概述流光，这款工具可以让一个只会点击鼠标的人成为专业的黑客，这样说一点也不夸张。
它可以探测POP3，FTP，HTTP，PROXY，FROM，SQL，SMTP，IPC，等各种漏洞。
并针对个中漏洞设计不同的破解方案。
2：流光使用：步骤1：打开高级扫描向导设置扫描参数“文件”--}“高级扫描向导”--}在“起始”/“结束”位置填入，你要扫描的IP段。
--}在“ 目标系统”中选择你要检测的操作系统。
--}在“获取主机名”、“PING检查”前面打勾--}在“检测项目”中选择“全选”--}然后单击“下一步”选择“标准端口扫描”说明：“标准断口”只对常见的断口进行扫描。
“自定义”可以自己定义进行扫描。
--}然后单击“下一步” 设置好所有检测项目后点击“下一步”--}在选择主机界面选择“本地主机”使用本地主机进任务扫描。
步骤2：单击“开始”扫描过程中要想停止选择“取消”不过要等一段时间。
步骤3：查看扫描报告。
扫描结束之后给出“HTLM”格式的报告方法二：一、POP3/FTP/…探测二、IPC探测三、SQL探测四、高级扫描五、其它…因为开发时间的原因，上面的探测模式略有不同，所以分成了四个部分，本教程说的是第一个部分的探测。
后面的探测模式应该属于流光的高级应用了：)流光的IPC探测：一、目的和任务：1、用流光的IPC探测获得一台NT主机的管理权限，并将这台主机做成一个跳板/代理。
2、学习IPC探测的相关知识。
二、探测流程：1、你得有流光，我这里试验用的是流光2001.FOR Win2000 中文版。
FOR Win98的不可以。
因为IPC连接功能是NT/ 2000提供的功能。
而且流光FOR 2K 要求你的操作系统得是NT/2000，否则流光启动会失败!什么是IPC：IPC是指"InterProcess Communications",准确的说是ipc$，是默认的在系统启动时的admin共享。
CloneStampTool
Clone Stamp ToolThe clone stamp tool is probably the most tedious tool in Photoshop, but at the same time may be one of the most important tools. When restoring old photos it is indispensable. It is used for copying (or “cloning”) one part of a picture to another. The clone tool is useful for the following purposes:•Fixing defects in photographs (dust, scratches, tears, stains, vignetting, etc.)•Removing unwanted items from a picture (phone wires, trash, mother-in-law)•Artistic effectsThe clone tool is selected from the tool bar with the symbol shown below. To use the clone tool a source and destination point are selected. The source is defined by typing ALT and clicking with the mouse. Once the source has been defined, the image is copied by clicking with the mouse.Three Methods For CloningThere are at least three methods used for cloning:•Cloning directly on the background layer•Making a duplicate layer and cloning on that layer•Cloning on a separate empty layerThe first method is most often used by beginners because it isthe most obvious. It is also the most dangerous because anychanges are permanent and can’t be undone once saved.Therefore, this method should NEVER be used. The secondmethod is better because no changes are made to thebackground layer. However, it is more difficult to unduemistakes. It also makes the image take up more storage spacesince there are now two copies of the image. Therefore, thisisn’t the best method either.In practice, the third method offers many advantages and inmost cases is the only one that should ever be used. If amistake is made it can simply be erased from the image usingthe erase tool. It takes up less space on the disk, and it is easyto toggle the changes by simply clicking the visibility icon.Note that there can be multiple clone layers which can beuseful for keeping organized. The figure to left shows abackground layer with two clone layers.Clone Tool OptionsOn the options bar there six setup options available:•Brush•Mode•Opacity•Flow•Aligned•Sample All LayersOf these, mode, aligned and “sample all layers” and sometimes brush are most important for photography. The opacity and flow should be set to 100%.Brush Size and HardnessThe brush option allows the user to define the brush size and the hardness (or amount of feathering) of the brush. However, rather than select a brush it is much easier just to use the shortcut keys:•Left bracket ( [ ) Decreases the size of the brush•Right bracket ( ] ) Increases the size of the brush•Shift left bracket (shift [ ) Decrease the amount of feathering•Shift right bracket (shift ] ) Increases the amount of featheringThe left and right brackets decrease and increase the size of the brush with each key press. The increment size depends on the size of the brush:Brush Size Increment/Decrement Size1•1-9•10-100 10•>100 25The hardness of the brush can be controlled by using the shift left bracket to make the brush softer, or shift right bracket to increase the hardness. There are five degrees of hardness and each click changes it by 20%, which gives you 100%, 80%, 60%, 40% and 20% as shown in the figure below.There is a trade-off when cloning between harshness and softness of the clone. A harder brush gives a more pure clone but can be very harsh and abrupt. On the other side, a soft brush is less harsh but by definition is less sharp. Ideally you want to use the hardest brush you can with without making the clone obvious. For most cases, unlessyou are cloning something very uniform like sky, the two hardest brushes will produce too sharp a transition in theimage. Usually 40% or 60% will be ideal.If for some reason none of these default brushes are suitable, a user defined brush can be defined under the brush option with any hardness from 1-100%. Note that these work the same for any of the brush tools (clone tool, paint brush or erase tool).AlignedThe aligned option determines how the source and destination of the clone tool align with each other. If aligned is on, then the source follows along as the tool is moved so they are always the same relative distance from each other. This will probably be the option you want 99% of the time.If the aligned option is turned off, then the source returns to the samepoint each time the mouse is clicked. Note that as long as the mouse isdown the source follows along just as if it was turned on. So why wouldyou want to do this? Maybe you have something like a bird or a graphicthat you want to replicate several times. Or you want to clone any areawhere there is only a small source to choose from (perhaps a patch ofblue sky on a gray day).On the picture at the left the bottom squares represent the source and thetwo rows of circles were cloned. In both cases the green square was theoriginal source, and both were cloned identically except that the bottomrow had alignment turned on, and the top row had it turned off.In the case where alignment was turned on the source followed the destination and there are three different circles. When the alignmentwas turned off, the same green circle was repeated three times.Sample All LayersThe Sample All Layers option determineshow Photoshop determines the sourceimage when it is empty or turned off. If“Sample All Layers” is turned off, thenPhotoshop will only sample from theoriginal layer defined as the source. If thatlayer is empty then nothing is cloned. If“Sample All Layers” is turned on, thenPhotoshop will sample from the first layerwhere an image is defined and is alsoACTIVE. The majority of the time thisoptions should be left on.In the example on the left the three squares again represent the source, but in this caseeach square was in a different layer as shown in the layers view. The bottom row of circles is with sample option turned on and the top row is with it turned off. In both cases the bottom layers with the red square was the source. Note that in the first case with “Sample All” turned on, all three circles are displayed because Photoshop sampled from the first layer it found that was defined. In the second case since "Sample All” was turned off, it only cloned from the one layer.Cloning from Multiple ImagesThere is nothing saying that the source and destination have to be from the same image. For example, if you have a bird in one picture that you want to copy into a second picture, simply bring both pictures into Photoshop and set one as the source and one as the destination.Cloning With Adjustment LayersThere are two important considerations when using adjustment layers. The first is that adjustment layers should always be on top of your clone layers. If you put the clone layer on top of the adjustment layer, and then later modify the adjustment layer, the changes won’t be updated in the clone layer.At the same time, if you have both a clone layer and adjustment layer and need to make further changes to the clone layer, always turn off ALL adjustment layers first. Otherwise the adjustment layers will affect the clone twice - once when you select the source (since the adjustment layer has modified the source) and a second time when you do the cloning (since the adjustment layer will affect the destination). Since adjustments were made twice to the image you won’t get the expected results.Cloning with Blending ModeYou may have noticed when scanning either slides or prints that dust spots are always black. On the other hand, when scanning negatives dust spots are always white since it is the inverse. However, when cloning out dust you are always modifying more than you really need to because the brush is always larger than the dirt, and because the dirt is usually irregular in size. Therefore, it would be nice if there was a way to ONLY change the dirt spot and modify as little of the image as necessary. Well, fortunately, there is - at least to an extent.As mentioned above, when scanning slides and prints the dust spots are always black. This implies that when cloning you will always want the change to lighten the image and not darken it. When working with negatives, since the dust is white you always want to darken the image and not lighten it. Therefore, if you set your blending mode to “Lighten” or “Darken”, respectively you help insure that as little of the image will be modified as possible. For example, in the case of a slide if your source is slightly darker than the destination then only the dust spot will be modified and nothing else, leaving the area around the spot intact. Of course if the source is lighter it will still modify it as before, but at least now there is a better chance of modifying only the dust. And in the case of a negative, if you set the blending mode to “Darken”, if your source is slightly lighter than the destination, again only the dust will be cloned.Note that this must be done on the layers palette and not in the options menu. The options menu will do the same thing, but only works if you are cloning into the same layer. If you are using a separate clone layer this option will not work.。
PROXKey Tool 用户手册说明书
PROXKey Tool User ManualTable of Contents1 Introduction (4)2 PROXKey Product (5)2.1 PROXKey Tool (5)2.2 PROXKey function modules (6)2.3 PROXKey using environment (7)3 PROXKey Tool Installation (8)3.1 PROXKey Tool Installation (8)4 PROXKey Tool (10)4.1 Launching PROXKey Tool (10)4.2 PROXKey Tool Overview (11)Change PIN (13)Change Token Name (14)Certificate (15)Device Information (16)About (21)Help (18)5 Support (22)Where we are (22)Follow us at (22)Table of FiguresFigure 1 Installation (8)Figure 2 Installation (9)Figure 3 PROXKey Token Tool Main Menu (10)Figure 4 Running Label of PROXKey Tool (11)Figure 5 Setting up User PIN (12)Figure 6 Set PIN Successful and Warning (12)Figure 7 Change PIN (13)Figure 8 Change USER PIN fail (14)Figure 9 Change Token name (14)Figure 10 Certificate (15)Figure 11 Device Information (16)Figure 12 Update (17)Figure 13 Diagnostic Tool (18)Figure 14 Help Menu (18)Figure 15 Ticket (19)Figure 16 Remote Access (19)Figure 17 System Setting (20)Figure 18 Java Configuration (20)Figure 19 About (21)1IntroductionWith the development of Internet and fast development of network technology a clear majority of people communicate with each other online,instead of traditional methods of face to face meeting. Due to this security authentication becomes vital for the network security, also the bank transactions and fund transfer becoming online it is very important to protect data.The USB tokens provide a secure way to store the Digital Signature Certificate.The PROXKey USB Token is a hardware cryptographic module with a USB form factor for two-factor authentication which has been validated against the FIPS 140-2 at security level3. The public and private user’s key is generated and is stored on the chip embedded inside the token; the key pairs are stored in EEPROM. Private Key is secured and cannot be exported.2PROXKey ProductIn internet applications, like e-business, e-government, network communication and e-transaction, it is very important to ensure the informationsecurity.PROXKey Product is developed as a solution of this security problem. It provides a convenient and reliable secure environment for customers.2.1PROXKey ToolHigh in security1.Supporting 2048 bits RSA asymmetric cryptographic algorithms and SHA2.2.Supporting password and hardware authentication.3.Hardware device provide secure memory space which can be used to store password,private key and other secret data. The secret data is not exportable;the hardware device is not replicable.4.Secure and reliable.All encryptions and decryptions are operated inside thePROXKeydevice.Uniformity specification1.Following the worldwide universal standards: PKCS#11 v2.1 specification and MicrosoftCSP 2.0 specification.pletely realized the security communication functions supported by SSL andS/MIME. The specification covers application and storage of digital certificate, digital signature and verification, encryption/decryption, etc.ing standard interface to connect with browsers, the communications is strictly abidingbrowser’s secure communication operating regulations.4.Supporting certificate’s interoperability between CSP and PKCS#11.5.Supporting certificate application and secure email exchange in the environment ofIE/Outlook, Foxmail, NetScape, Mozilla and Firefox/Thunderbird.6.Supporting X. 509 v3 certificate storage.Excellent compatibility1.No need to install special PROXKey driver, the driver integrated inside the WindowsOperating System is used there by eliminating the driver installation.2.The hardware is a kind of USB device which is following USB1.1/USB 2.0specification. Itcan be used conveniently in every USB supported facilities.4.Uniform interfaces is used for UDK devices. One suite can supports both HID and UDKdevices.5.The UI is supported in Windows/ME/2000/2003/XP/Vista/Windows7/Windows 8 andWindows 8.1/Linux Operating Systems are all supporting.Flexible designing modularized design to meet customer’s dedicated requirements.2.A convenient platform for user’s certificates management is provided.3.UI (User Interface) is designed up to customer’s requirements.4.Secondary development interface is provided.2.2PROXKey function modulesPROXKey network security suite includes the following 5 modules:CSP module:1.It is a basic interface module based on Microsoft CSP2.0 specification.2. It is configured at registry.3.It can be used in IE browser, Outlook and Foxmail for certificate application, securitywebsite visitation and security email service, etc.PKCS#11 Module:1. Supporting PKCS#11 v2.1 interface.2. It is applicable in NetScape/Mozilla browser and ThunderBird email server. Administrator’s tool:It provides functions of key initialization, certificate operation and PIN operation, etc. User’s tool:It provides not only PIN operations of verification and modification, but also certificate operations of checking and installation/uninstall.Background:At the time of PROXKey plug in and out, certificate registration/revocation will be automatically done, and application programs will automatically start and end.2.3PROXKey using environmentThe supporting operating systems are shown as below:WIN 2000/2003/2008ServerWINDOWS 7, 8, 8.1, 10Mac OS, Linux and UbuntuThe supporting software includes:IE/Mozilla/Netscape/browsers.Outlook/Foxmail/ThunderBird email clients.3PROXKey Tool InstallationThe PROXKey comes with the Autorun supported ND (No Driver) feature. User can install the PROXKey tool just by plugging the token into the USB slot, the installation and details of the PROXKey tool is explained in detail below.3.1PROXKey Tool InstallationTo begin with the installation just plug in the token into the USB slot of the Laptop or PC, the Autorun supported product will automatically install PROXKey tool on the system1.Once the token is plugged into the USB slot the Autorun features asks for the installation of thetoken management tool as shown in the Figure 1, just click the install button to proceed with the installation of the software.Figure1Installation2.The token management software installs as shown in the Figure 2,clickfinish button to complete theinstallation.Figure2Installation4PROXKey Tool4.1Launching PROXKey ToolThe PROXKey tool can be launched using the short cut icon created on the desktop during installation, or can be found by clicking Start menu on windows and then finding the WD PROXKey Tool.The User Interface of PROX Key Token tool is easy and elegant as shown in Figure 3.All the functionalities are represented by icons which are easy to access with just a click of mouse button.Figure3PROXKey Token Tool Main MenuDuring PROXKey administrator’s tool running, the label of the tool will display in the right-handbottom corner as shown in Figure 4.Figure4Running Label of PROXKey Tool4.2PROXKey Tool OverviewAfter the installation of the software and when the token is plugged in, the user will be advised to set the PIN as shown in Figure 5. The user should enter the appropriate PIN length between 6-32 characters and set the user PIN.Each new token must be set with a user defined PIN.The length of the PIN should be between 6-32 (Alpha Numeric)characters.This PIN can be reset by the user later if needed.Figure 5shows the Set User PIN prompt and Figure 6(a) shows the successful PIN set.If the PIN is entered exceed the range of 6 to 32 characters, a warning window like Figure 6(b) will pop out to tell you PIN for the token requirements.Figure5Setting up User PINOnce the proper PIN is set the dialog as shown in Figure 6 (a) is prompted and in case of invalid length of PIN setting a dialog as shown in Figure 6 (b) is prompted.(a)Figure6Set PIN Successful and Warning(b)Figure3shows the basic functionalities of the PROXKey token tool.1.Change User PIN2.Change Token Name3.Certificate4.Device Information5.Options6.Help7.AboutChange PINIf the user wants to change the PIN which was set earlier this option helps to set a new PIN.The user needs to remember his earlier set PIN which he needs to enter first and then set a new PIN as shown in Figure 7. There is an added option of even using the softkeyboard to enter the PIN.Figure7Change PINHowever,when the user tries to change the USER PIN he needs to enter the old USER PIN and confirm the old USER PIN and then enter the new USER PIN the maximum User PIN error counter is set by default to 15so the user cannot try to update the password more than15 times.As shown in Figure 8 user gets 15attempts by default in case he wants to reset the USER PIN. If the user has forgotten the USER PIN, please contact the support for help.Figure8Change USER PIN failChange Token NameChange Label provides administrators with the interface of change the label of user’s device.It is shown in Figure9Figure9Change Token nameCertificateThe PROXKey Token tool automatically registers the CA, CCA and also the user certificate which is imported in the token, the user need not worry about registering each certificate which he dwnloads.Figure10CertificateShow CertificateThis function shows the certificate details such as the issuer information, issued toinformation and validity information.Delete CertificateThis feature enables to delete the unwanted certificates, the user PIN is needed todelete the certificates which are not needed.Import CertificateImport Certificate feature enables the user to import the certificates into the token, the user PIN is needed to import the certificates in the token.Device InformationDevice inforamtion provides the token information and the system environment asshown in the figure. Such as the Winodos version, IE version,Figure11Device InformationOptionsCache User PINThis is used to cache the USER PIN of the token so that when the token is used for multiple signing the token do not prompt to enter the USER PIN again and again. This is valid until the token is plugged out from the system. Once the token is plugged this feature must be again selected to cache the password.Figure 12 shows all the submenus whenFigure12Update✓UpdateThe PROXKey tokens have automatic update feature, where in when the new software is released for the tokens it will be uploaded in the FTP.When the “Update” is clicked with the proper internet connection the token software automatically updates itself providing ease of use for the user. Figure 12 shows the update process✓Diagnostic ToolDiagnostic tool can be used to understand the user system configurations; this basically helps to understand the technical issues or compatibility issue. This tool helps the support team to get the end use system details. The diagnostic tool also creates a log file which will be helpful for thesupport team to resolve issues. Figure13shows the Diagnostic Tool workingFigure13Diagnostic ToolHelpThis will help the end user for the support related help Remote for support helps in using team viewer support and support website Figure 14 shows the help menuFigure14Help Menu✓TicketThis feature is useful for the user to report the issues to the support team, when the user is facing any issues he/she can raise the ticket. The support team will analyse the issue and close the ticket at the earliest, this is the unique feature provided in PROXKey for user convinence. Figure14 shows the ticket raising procedure whichFigure15Ticket✓Remote AccessFigure16Remote Access✓System SettingThis is used to resolve the sytem configuration related issues, if the user faces any compatablity issue the user just need to click this button and file downloads and installs which shall resolve all the system configuration related issues. Figure 16 shows the System SettingFigure17System SettingJava ConfigurationsThis button resolves the java related issues,the user just need to click this button and a file downloads and installs which will resolve all the java related issues. Figure 17 shows the java configurationFigure18Java ConfigurationAboutThis shows the version and copyright information of the company and the version name of the software the user is usingFigure19About5SupportFor any assistance and support about the PROXKey token or the PROXKey Tool please find the help icon on the left hand top corner, click the Help>About(A) icon and you can find the link for the PROXKey Tool and PROXKey token support as shown in the Figure 13and the website where the contact details can be found is as shwon in Figure 13Where we areHead OfficeCrypto Planet(A Venture of Pagaria Advisory Private Limited) F-15, 1st Floor, Haware Centurion,Plot: 88-91, Sector–19A,Nerul–East, Navi Mumbai, Maharashtra, India–400706.Follow us atContact InfoIVR:+91 86551 86552Landline:*********************** E Mail:******************************************************Web Address:www.cryptoplanet.in。
micropython pin函数 -回复
micropython pin函数-回复MicroPython是Python语言的一种实现，特别适用于嵌入式系统和物联网设备。
在MicroPython中，pin功能是其中一个重要的模块之一。
本文将介绍MicroPython中pin函数的基本概念、用法以及一些常见的应用案例。
# 第一部分：pin函数的基本概念和用法1.1 pin函数的作用及用途在MicroPython中，pin函数用于控制和操作设备的引脚（pin）。
引脚是用于与外部硬件连接的端口，通过pin函数可以读取和写入引脚的状态、配置引脚的模式和电平等。
1.2 引脚的编号和标识在使用pin函数之前，我们需要了解设备引脚的编号和标识方式。
一般而言，设备上的引脚会有一个固定的编号（如P0、P1）或者名称（如GPIO0、GPIO1）来标识。
在使用pin函数时，我们需要根据设备的引脚编号或名称来确定要操作的引脚。
1.3 pin函数的基本语法pin函数的基本语法如下所示：pin(pin_number, mode, [value])其中：- `pin_number`：要操作的引脚的编号或名称。
- `mode`：引脚的模式，可以是输入（'in'）或输出（'out'）。
- `value`（可选）：当引脚模式为输出时，可以指定引脚的初始电平状态，可以是高电平（'1'）或低电平（'0'）。
1.4 pin函数的返回值pin函数的返回值为一个`Pin`对象，可以通过该对象继续操作引脚。
# 第二部分：pin函数的应用案例2.1 控制LED灯一个常见的应用案例是使用pin函数来控制LED灯的亮灭。
假设我们将LED灯连接到设备的引脚P1上，按下按钮时，LED灯亮起，松开按钮时，LED灯熄灭。
以下是实现这个案例的代码：pythonfrom machine import Pinbutton_pin = Pin(P0, Pin.IN)led_pin = Pin(P1, Pin.OUT)while True:if button_pin.value() == 1:led_pin.value(1)else:led_pin.value(0)在上述代码中，我们首先定义了两个引脚对象：`button_pin`和`led_pin`，分别用于按钮输入和LED灯输出。
scfrutool描述 -回复
scfrutool描述-回复科技对我们日常生活的影响科技是当代社会的一个重要组成部分，无论我们走到哪里，都可以看到它的身影。
从智能手机到互联网，从人工智能到物联网，科技已经渗透到我们的生活的方方面面。
它不仅改变了我们的工作方式，也对我们的日常生活产生了深远的影响。
在这篇文章中，我将从不同的角度来探讨科技对我们日常生活的影响。
首先，科技对我们的交流方式产生了革命性的影响。
以前，人们只能通过写信或者面对面的交流方式来与亲友保持联系。
然而，随着智能手机和互联网的普及，我们可以通过电话、短信、社交媒体等方式随时与他人分享我们的想法和感受。
这大大提高了我们的交流效率，丰富了我们的沟通方式。
不管我们身处何地，只要有网络连接，我们都能轻松地与世界各地的人进行交流。
其次，科技也对我们的工作方式造成了深刻的影响。
过去，许多工作需要手动完成，需要花费大量的时间和精力。
然而，现在的办公室里充斥着各种智能设备，如电脑、打印机、数码相机等，这些设备大大提高了我们的工作效率和生产力。
我们可以通过电子邮件发送文件，通过视频会议与同事合作，并使用各种软件来完成繁琐的任务。
科技的进步使得工作更加高效和便捷，为我们提供了更多的工作机会。
此外，科技还在医疗领域带来了巨大的改变。
医疗技术的不断发展和创新，使得医生们能够利用先进的设备和技术更好地诊断和治疗疾病。
例如，通过核磁共振成像（MRI）等高科技设备，医生可以更准确地观察人体内部的情况，从而更好地了解病情并制定治疗方案。
此外，移动应用程序和健康监测设备的普及，使得我们能够更好地关注个人健康。
我们可以使用智能手表或者手持设备来跟踪运动情况、监测心率和血压等数据，更好地掌握自己的身体状况。
另外一个科技对我们日常生活的重要影响是在交通领域。
交通问题一直是城市中的一个挑战，然而科技的发展为我们提供了解决方案。
例如，出租车应用程序和共享单车等新兴交通工具的出现，使得我们能够更方便地出行，减少了我们在交通堵塞中浪费的时间。