FORMING METHOD FOR PLASMA CVD FILM

专利名称：FORMING METHOD FOR PLASMA CVD FILM 发明人：TAKAHASHI SHIGERU,FUKUDA

TAKUYA,MOCHIZUKI YASUHIRO,MONMA

NAOHIRO,SONOBE TADASHI

申请号：JP9984087

申请日：19870424

公开号：JPS63266829A

公开日：

19881102

专利内容由知识产权出版社提供

摘要：PURPOSE:To form a homogeneous and flat CVD film at a high speed even on a surface to be treated with uneven steps on its surface by associating depositing and etching conditions corresponding to the width and the height of uneven stepwise pattern on the surface to be treated, and repeating those processes. CONSTITUTION:A microwave plasma CVD film 4 is deposited in a predetermined thickness on a stepwise surface formed of first wiring layer 3, such as, made of aluminum or the like formed on a first insulating film 2 on a substrate 1 made of a silicon plate or the like, and a high frequency electric field is applied into a gas having large sputtering efficiency, such as Ar or the like, and a sputter etching is conducted. In this case, the layer 3 and the wiring layer shoulders are etched more. Again, the film 4 is deposited to be superposed, and the sputter etching is repeated, thereby forming the film 4 having a flat surface. The narrower the width of the layer 3 is, the narrower the interval of both the shoulders becomes, thereby early flattening the surface. Accordingly, the depositing velocity can be improved by controlling the sputter etching amount in response to the stepwise pattern width mixed on the same substrate.

申请人：HITACHI LTD 更多信息请下载全文后查看