METHOD FOR DEPOSITING POLYSILICON THIN FILM WITH
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申请人：KIM, Hai Won,WOO, Sang Ho,CHO, Sung Gil,PARK, Song Hwan,JUNG, Kyung Soo
地址：KR,KR,KR,KR,KR,KR 国籍：KR,KR,KR,KR,KR,KR 代理人：KIM, Inhan 更多信息请下载全文后查看
专利内容由知识产权出版社提供
专利名称：METHOD FOR DEPOSITING POLYSILICON THIN FILM WITH ULTRA-FINE CRYSTAL GRAINS
发明人：KIM, Hai Won,WOO, Sang Ho,CHO, Sung Gil,PARK, Song Hwan,JUNG百度文库 Kyung Soo
申请号：KR2009002266 申请日：200904 29 公开号：WO09/134 080P 1 公开日：20091105
摘要：Disclosed is a method for depositing a polysilicon thin film with ultra-fine crystal grains. According to the present invention, the polysilicon thin film is deposited on a substrate by supplying source gases inside a chamber in which the substrate is loaded, wherein the source gases include a silicon-based gas and an oxygen-based gas. The mixing ratio of the oxygen-based gas to the silicon-based gas may be 0.15 or less (excluding 0). The oxygen within the thin film may be 20 atomic% (atomic percentage) or less (excluding 0).
地址：KR,KR,KR,KR,KR,KR 国籍：KR,KR,KR,KR,KR,KR 代理人：KIM, Inhan 更多信息请下载全文后查看
专利内容由知识产权出版社提供
专利名称：METHOD FOR DEPOSITING POLYSILICON THIN FILM WITH ULTRA-FINE CRYSTAL GRAINS
发明人：KIM, Hai Won,WOO, Sang Ho,CHO, Sung Gil,PARK, Song Hwan,JUNG百度文库 Kyung Soo
申请号：KR2009002266 申请日：200904 29 公开号：WO09/134 080P 1 公开日：20091105
摘要：Disclosed is a method for depositing a polysilicon thin film with ultra-fine crystal grains. According to the present invention, the polysilicon thin film is deposited on a substrate by supplying source gases inside a chamber in which the substrate is loaded, wherein the source gases include a silicon-based gas and an oxygen-based gas. The mixing ratio of the oxygen-based gas to the silicon-based gas may be 0.15 or less (excluding 0). The oxygen within the thin film may be 20 atomic% (atomic percentage) or less (excluding 0).