300mm AP52 gap analysis-BOM_ATK updated
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No
Does AWW has experience in using TOK CR4000 as RDL template?
Low
Low Low
Middle
Primary concern is SC40 (Copper sulfate based) plated Cu is smooth with smaller gain size compared with MSA100. ATC is wondering if the smooth RDL surface will impact the adhesion to PI2 or not. Does AWW has experience in RDL Cu plated by copper sulfate with smooth surface?
NICKEL SULFAMATE
No
TS140
Low
NPS5300
No
NA
Low
H2SO4/H3PO4 base solution
Low
H2O2 base solution
Low
CF4 descum
No
Fluxless Reflow
No
-
Low
-
No
-
Risk Assess
ment No Low No No No No No No No No
Low
No
No No No No
Remark
No
Low Low Low Low
No
No
No No No No No No No No No Low No No No No No No
Low
Low Low
Low
Middle Middle
No
ATK5 apply CF4 dAeTsKc5umusaeftFelruxeltecshs reflow. It applied
TS140
HD4100 UV
KD870 -
O2 desucm DI water
Ti / Cu target DI water
TOK CR4000 NA UV Yes
TMAH O2 desucm NICKEL SULFAMATE
TS140
PR strip
Acetone / IPA
ST-120
pre-ETCH Descum Cu etch
Low
No
Ti etch
post-ETCH Descum Flux & reflow Flux clean
Post reflow descum FQC
O2 descum 3M(H2SO4/H3PO4 base)
solution BOE(HF/H2O2 base) solution
NA 5R Mesitylene CF4/H2N2 -
TMAH O2 desucm
RDL Cu plating
Cu plating solution(Enthone
Cu plating
MSA100)
solution(Enthone SC40)
PR strip
Acetone / IPA
ST-120
pre-ETCH Descum Cu etch Ti etch
Low No Low Low
Middle
No
NPS5300
H2SO4/H3PO4 base solution
Learnt from T1, apply O2 only descum post RDL seed etching. Would like to know the AWW strategic for the descum post seed etching? Any recommendation or anticipated risk?
PEB UBM PR Develop UBM PR Descum
Ni plating LF plating
HD4100 UV
KD870 -
O2 descum DI water
Ti / Cu target DI water AZ4620 Yes UV NA KD860
O2 descum NICKEL SULFAMATE
ATK Flow and Material for Maxim
O2 descum DI water DI water HD4100 UV KD870 -
O2 descum DI water
Ti / Cu target -
AZ4620 UV NA
KD860 O2 descum
Cu plating solution(Enthone MSA100)
Flow
Incoming descum Incoming clean
SRD incoming clean PI1 Coat
PI1 Exposure PI1 Develop
PI1 Cure Post PI1 Cure Descum Post descum SRD clean
RDL Dep SRD SPT
H2O2 base solution CF4/O2 descum Acetic acid
No
HD4100
No
UV
No
KD870
No
No
O2 descum
No
DI water
No
Ti / Cu target
No
-
Low
AZ4620
Low
NA
No
UV
Low
NA
Low
KD860
No
O2 descum
No
AZ4620 UV NA
KD860 O2 descum
12" AP52 in Plan
Material O2 descum
DI water DI water HD4100
UV KD870
O2 desucm
DI water Ti / Cu target
DI water
TOK CR4000 UV Yes
PR Coat PR Exposure
PEB PR Develop RDL PR Descum
8"AP52 production
Material O2 descum Acetone+IPA
DI water HD4100
UV KD870
O2 descum
DI water Ti / Cu target
DI water
O2 descum (Proposed)
Acetic acid
Acetic acid
Acetic acid
PI2 Coat PI2 Exposure PI2 Develop
PI2 Cure Post PI2 Cure Descum Post descum SRD clean
UBM Dep SRD SPT UBM PR Coat UBM PR Oven/Bake PR Exposure
O2 desucm Cu30(H3PO4 base)
solution TS899(H2O2 base)
solution
N2 descum
5R
Mesitylene
NA
-
Risk Assessment (initial)
Remark
No
Low
No No No No No No No No
No Middle
O2 descum 3M(H2SO4/H3PO4 base)
solution
BOE(HF/H2O2 base) solution
O2 desucm
Cu30(H3PO4 base) solution
TS899(H2O2 base) solution
post-ETCH Descum
CF4/O2 descum
Does AWW has experience in using TOK CR4000 as RDL template?
Low
Low Low
Middle
Primary concern is SC40 (Copper sulfate based) plated Cu is smooth with smaller gain size compared with MSA100. ATC is wondering if the smooth RDL surface will impact the adhesion to PI2 or not. Does AWW has experience in RDL Cu plated by copper sulfate with smooth surface?
NICKEL SULFAMATE
No
TS140
Low
NPS5300
No
NA
Low
H2SO4/H3PO4 base solution
Low
H2O2 base solution
Low
CF4 descum
No
Fluxless Reflow
No
-
Low
-
No
-
Risk Assess
ment No Low No No No No No No No No
Low
No
No No No No
Remark
No
Low Low Low Low
No
No
No No No No No No No No No Low No No No No No No
Low
Low Low
Low
Middle Middle
No
ATK5 apply CF4 dAeTsKc5umusaeftFelruxeltecshs reflow. It applied
TS140
HD4100 UV
KD870 -
O2 desucm DI water
Ti / Cu target DI water
TOK CR4000 NA UV Yes
TMAH O2 desucm NICKEL SULFAMATE
TS140
PR strip
Acetone / IPA
ST-120
pre-ETCH Descum Cu etch
Low
No
Ti etch
post-ETCH Descum Flux & reflow Flux clean
Post reflow descum FQC
O2 descum 3M(H2SO4/H3PO4 base)
solution BOE(HF/H2O2 base) solution
NA 5R Mesitylene CF4/H2N2 -
TMAH O2 desucm
RDL Cu plating
Cu plating solution(Enthone
Cu plating
MSA100)
solution(Enthone SC40)
PR strip
Acetone / IPA
ST-120
pre-ETCH Descum Cu etch Ti etch
Low No Low Low
Middle
No
NPS5300
H2SO4/H3PO4 base solution
Learnt from T1, apply O2 only descum post RDL seed etching. Would like to know the AWW strategic for the descum post seed etching? Any recommendation or anticipated risk?
PEB UBM PR Develop UBM PR Descum
Ni plating LF plating
HD4100 UV
KD870 -
O2 descum DI water
Ti / Cu target DI water AZ4620 Yes UV NA KD860
O2 descum NICKEL SULFAMATE
ATK Flow and Material for Maxim
O2 descum DI water DI water HD4100 UV KD870 -
O2 descum DI water
Ti / Cu target -
AZ4620 UV NA
KD860 O2 descum
Cu plating solution(Enthone MSA100)
Flow
Incoming descum Incoming clean
SRD incoming clean PI1 Coat
PI1 Exposure PI1 Develop
PI1 Cure Post PI1 Cure Descum Post descum SRD clean
RDL Dep SRD SPT
H2O2 base solution CF4/O2 descum Acetic acid
No
HD4100
No
UV
No
KD870
No
No
O2 descum
No
DI water
No
Ti / Cu target
No
-
Low
AZ4620
Low
NA
No
UV
Low
NA
Low
KD860
No
O2 descum
No
AZ4620 UV NA
KD860 O2 descum
12" AP52 in Plan
Material O2 descum
DI water DI water HD4100
UV KD870
O2 desucm
DI water Ti / Cu target
DI water
TOK CR4000 UV Yes
PR Coat PR Exposure
PEB PR Develop RDL PR Descum
8"AP52 production
Material O2 descum Acetone+IPA
DI water HD4100
UV KD870
O2 descum
DI water Ti / Cu target
DI water
O2 descum (Proposed)
Acetic acid
Acetic acid
Acetic acid
PI2 Coat PI2 Exposure PI2 Develop
PI2 Cure Post PI2 Cure Descum Post descum SRD clean
UBM Dep SRD SPT UBM PR Coat UBM PR Oven/Bake PR Exposure
O2 desucm Cu30(H3PO4 base)
solution TS899(H2O2 base)
solution
N2 descum
5R
Mesitylene
NA
-
Risk Assessment (initial)
Remark
No
Low
No No No No No No No No
No Middle
O2 descum 3M(H2SO4/H3PO4 base)
solution
BOE(HF/H2O2 base) solution
O2 desucm
Cu30(H3PO4 base) solution
TS899(H2O2 base) solution
post-ETCH Descum
CF4/O2 descum