SGH20N60RUF中文资料
茨浮变频器
◆可选配GPRS远程通讯模块实现远程控制与操作，便于工程商、代理商、最终用户的使用和维护。
该系列产品根据用途可分为通用型和多种专用型产品。
内置多项自主专有技术的模组，具有节能负载跟踪能力，可在50HZ的频率下实现节能运行。采用美国TI公司 32BIT DSP控制,驱动电路采用美国高可靠专用驱动保护模块、双重光电隔离、光纤传输、内置智能PID调节器、 内置485串行通讯接口,及标准modbus工业现场总线协议；SC总线协议。设有风机自动控制电路，根据环境温度和 散热片温度自动控制风机的启动停止和速度，从而延长了风机的寿命。该产品还具有参数拷贝功能，可以通过键 盘或远程拷贝或设置功能参数。可选配GPRS远程通讯模块。实现变频器的远程控制和参数设置。可实现油田抽油 机的监控和电流工图传输和显示。可靠性高、EMI低,使用寿命长,结构紧凑合理、体积小、便于安装、可柜内安 装。
(High Voltage Inverters)
是带能量回馈的四象限运行的三电平直接转矩控制的中压变频器（690V~10kV，100~1000kHP），带有PWM整 流，可使输入功率因数接近于1。机械特性硬度高。零速可达150%的转矩。适用于中压起重机械、牵引、轧制机 械等对速度、转矩有高精度要求的场合。
·PWM整流单元
·PWM回馈单元
·APFC模块
·直流制动单元
·GPRS通讯模块
·输入电抗器
·输入EMI滤波器
(High Voltage Inverter)
是完美无谐波中压变频器（2.3~13.8kV，300~10000KW）可提供无与伦比的高可靠性及效率。该产品采用我 所自主研发的MASTDRIVE作为控制器。控制器功能齐全，算法独特，运算精确，波形质量高。在节能方面更是独 树一帜。完美无谐波变频器在电压和电流谐波方面能够满足要求最为严格的IEEE519标准。选择完美无谐波中压 变频器，无论是何种工业、何种应用都意味着保持高产量的同时降低维护成本，改进节能工艺的同时降低运营成 本。为了验证和测试控制波形的正确性，我们研制成功了在线单元串联高压变频器计算机仿真系统平台，在这个 平台上可以验证各种控制算法的正确性和控制性能。
G20N60资料
SGH80N60UFD中文资料
Electrical Characteristics of DIODE TC = 25°C unless otherwise notedCES CE CES GEI GES G-E Leakage Current V GE = V GES, V CE = 0V ----± 100nAOn CharacteristicsV GE(th)G-E Threshold Voltage I C = 40mA, V CE = V GE 3.5 4.5 6.5VV CE(sat)Collector to EmitterSaturation VoltageI C = 40A, V GE = 15V-- 2.1 2.6VI C = 80A, V GE = 15V-- 2.6--VDynamic CharacteristicsC ies Input CapacitanceV CE = 30V, V GE = 0V,f = 1MHz --2790--pFC oes Output Capacitance--350--pF C res Reverse Transfer Capacitance--100--pFSwitching Characteristicst d(on)Turn-On Delay TimeV CC = 300 V, I C = 40A,R G = 5Ω, V GE = 15V,Inductive Load, T C = 25°C --23--nst r Rise Time--50--ns t d(off)Turn-Off Delay Time--90130ns t f Fall Time--50150ns E on Turn-On Switching Loss--570--uJ E off Turn-Off Switching Loss--590--uJ E ts TotalSwitchingLoss--11601500uJt d(on)Turn-On Delay TimeV CC = 300 V, I C = 40A,R G = 5Ω, V GE = 15V,Inductive Load, T C = 125°C --30--nst r Rise Time--55--ns t d(off)Turn-Off Delay Time--150200ns t f Fall Time--160250ns E on Turn-On Switching Loss--630--uJ E off Turn-Off Switching Loss--940--uJ E ts TotalSwitchingLoss--15802000uJQ g Total Gate ChargeV CE = 300 V, I C = 40A,V GE = 15V --175250nCQ ge Gate-Emitter Charge--2540nC Q gc Gate-Collector Charge--6090nC L e Internal Emitter Inductance Measured 5mm from PKG--14--nHSymbol Parameter Test Conditions Min.Typ.Max.UnitsV FM Diode Forward Voltage I F = 25A T C = 25°C-- 1.4 1.7V T C = 100°C-- 1.3--t rr Diode Reverse Recovery TimeI F = 25A,di/dt = 200A/us T C = 25°C--5095ns T C = 100°C--105--I rr Diode Peak Reverse RecoveryCurrentT C = 25°C-- 4.510AT C = 100°C--8.5--Q rr Diode Reverse Recovery Charge T C = 25°C--112375nC T C = 100°C--420--DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In Design First ProductionFull ProductionNot In ProductionImpliedDisconnect ISOPLANARLittleFETMicroFETMicroPakMICROWIREMSXMSXProOCXOCXProOPTOLOGIC âOPTOPLANARFACT FACT Quiet Series FAST âFASTr FRFET GlobalOptoisolator GTO HiSeCI 2CRev. I1ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E 2CMOS TM EnSigna TMPACMANPOP Power247 PowerTrench âQFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER âSMART START SPMStealthSuperSOT -3SuperSOT -6SuperSOT -8SyncFET TinyLogic TruTranslation UHC UltraFET âVCXAcross the board. Around the world. The Power FranchiseProgrammable Active Droop。
IXGH40N60中文资料
© 1996 IXYS All rights reservedTO-247 AD (IXGH)V CESI C25V CE(sat)Low V CE(sat) IGBT IXGH/IXGM 40 N60600 V 75 A 2.5 V High speed IGBTIXGH/IXGM 40 N60A600 V75 A3.0 VGCESymbol Test Conditions Maximum RatingsV CES T J = 25°C to 150°C600V V CGR T J = 25°C to 150°C; R GE = 1 M Ω600V V GES Continuous ±20V V GEM Transient±30V I C25T C = 25°C, limited by leads 75A I C90T C = 90°C 40A I CMT C = 25°C, 1 ms150A SSOA V GE = 15 V, T VJ = 125°C, R G = 22 Ω I CM = 80A (RBSOA)Clamped inductive load, L = 30 µH @ 0.8 V CESP C T C = 25°C250W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°CM d Mounting torque (M3) 1.13/10Nm/lb.in.WeightTO-204 = 18 g, TO-247 = 6 gMaximum lead temperature for soldering 300°C1.6 mm (0.062 in.) from case for 10 sSymbol Test ConditionsCharacteristic Values(T J= 25°C, unless otherwise specified)min.typ.max.BV CES I C = 250 µA, V GE = 0 V 600V V GE(th)I C= 250 µA, V CE = V GE2.55V I CES V CE = 0.8 • V CES T J = 25°C 200µA V GE = 0 VTJ = 125°C1mA I GES V CE = 0 V, V GE = ±20 V ±100nA V CE(sat)I C= I C90, V GE = 15 V40N60 2.5V 40N60A3.0VTO-204 AE (IXGM)CG = Gate, C = Collector,E = Emitter,TAB = CollectorFeaturesl International standard packages l 2nd generation HDMOS TM process l Low V CE(sat)-for low on-state conduction losses l High current handling capability l MOS Gate turn-on -drive simplicitylVoltage rating guaranteed at high temperature (125°C)Applicationsl AC motor speed control l DC servo and robot drives l DC choppersl Uninterruptible power supplies (UPS)lSwitch-mode and resonant-mode power suppliesAdvantageslEasy to mount with 1 screw (TO-247)(isolated mounting screw hole)lHigh power density91513E (3/96)IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7154,850,0724,931,8445,034,7965,063,3075,237,4815,381,025IXYS reserves the right to change limits, test conditions, and dimensions.SymbolTest ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.g fs I C = I C90; V CE = 10 V,2535S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %C ies 4500pF C oes V CE = 25 V, V GE = 0 V, f = 1 MHz300pF C res 60pF Q g 200250nC Q ge I C = I C90, V GE = 15 V, V CE = 0.5 V CES 4580nC Q gc 88120nC t d(on)100ns t ri 200ns t d(off)600ns t fi 40N60A 200ns E off 40N60A 3mJ t d(on)100ns t ri 200ns E on 4mJ t d(off)6001000ns t fi 40N606002000ns 40N60A 300800ns E off 40N6012mJ 40N60A6mJ R thJC 0.5K/WR thCK0.25K/WInductive load, T J = 25°CI C = I C90, V GE = 15 V, L = 100 µH V CE = 0.8 V CES , R G = R off = 22 ΩSwitching times may increasefor V CE (Clamp) > 0.8 • V CES ,higher T J or increased R GInductive load, T J = 125°C I C = I C90, V GE = 15 V,L = 100 µH V CE = 0.8 V CES ,R G = R off = 22 ΩRemarks: Switching times may increase for V CE(Clamp) > 0.8 • V CES , higher T J or increased R GFig. 1Saturation CharacteristicsFig.7Gate Charge。
20n60场效应管参数
20n60场效应管参数20n60场效应管是电子设备中常用的一种功率放大器。
它有许多优点，能有效地实现大功率放大，抗干扰性能也很强。
它的参数也相当重要，控制也比较复杂，因此要全面了解20n60场效应管的参数是很有必要的。
20n60场效应管的参数主要有关于功率放大能力、频率特性、噪声特性以及其它功能特性。
1、功率放大能力功率放大能力是20n60场效应管参数中最重要的一个参数，它决定着20n60场效应管所能放大的最大信号输入和输出功率。
它有三个参数，分别是负载阻抗、输入功率以及输出功率。
负载阻抗即20n60场效应管的负载电阻，它决定着20n60场效应管的负载电路的抗干扰能力，从而也影响着20n60场效应管的功率放大能力。
输入功率是20n60场效应管能够放大的最大信号输入功率，也就是20n60场效应管所能接受的最大输入功率，一般来说输入功率要大于输出功率的90%。
输出功率是20n60场效应管能够放大的最大信号输出功率，也就是20n60场效应管所能输出的最大功率。
它与负载阻抗有关，当负载阻抗发生变化时，输出功率也会相应发生变化。
2、频率特性20n60场效应管参数中的频率特性是指20n60场效应管在不同频率下的表现，它会影响20n60场效应管的频率响应范围以及频率失真程度。
20n60场效应管的频率特性有两个参数，分别是最高频率（fh）和最低频率（fl）。
最高频率是20n60场效应管所能放大的最大信号频率，一般来说，它要大于最低频率。
最低频率是20n60场效应管所能放大的最小信号频率，一般来说，它要小于最高频率。
3、噪声特性20n60场效应管参数中的噪声特性是指20n60场效应管在输出信号中的噪声程度，它会影响20n60场效应管的静态噪声系数以及动态噪声系数。
20n60场效应管的噪声特性有两个参数，分别是噪声下降函数（No）和有效噪声系数（en）。
噪声下降函数是20n60场效应管在增益下噪声的变化情况，它决定了20n60场效应管的动态噪声系数。
供应二极管,整流二极管,肖特基二极管,快恢复二极管
我们始终秉承：高品质，优价格，全面及时的售后服务的宗旨；去服务客户，回报社会！富茁人坚信在不久的将来，通过我们不断的努力，把我们的产品推向全球．未来将朝着发展成为国际化企业及国内更好的整流半导体器件公司而奋斗．本公司愿与各地新老客户友好合作，共创美好明天 。
产品种类抱括:二极管，肖特基，快恢复，整流桥，整流二极管，肖特基二极管，快恢复二极管电子元件，SBL2040，S20C40，SBL1640，S16C40C，SR3040，F16C20C，F20C20C，MBR10100，MBR20100，MBR1040，1N4148，1N5819，1N5408，FR104，FR107，RL205，RL207，RL257，等。
6、薄型扁桥 GBL/GBU/KBJ/GBJ 4A/6A/8A/15/25A(50V~1000V)
7、圆 桥 W/2W 1A-2A(50V~1000V)
8、方 桥 KBPC15A/25A/35A/50A (50V~1000V) BR35A/50A (50V~1000V)
9、肖特基二极管 MBR1040/1045 MBR1240/1245 MBR1640/1645 MBR2040/2045 MBR10100/MBR10150/MBR10200/MBR20100/MBR20150/MBR20200
1、迷你桥 MB1M-MB10M/MB1S-10S 0.5A-1A (50V~1000V)
2、DIP/SMD桥 DF/DB 1A-1.5A(50V~1000V)
3、扁 桥 KBP 2A-3A(50V~1000V)
4、扁 桥 KBL/ RS 4A(50V~1000V)
5、扁 桥 KBU/ RS 6A-10A/(50V~1000V)
深圳市富茁投资发展有限公司,其前身是深圳市富茁电子有限公司成立于2002年，是一个朝气蓬勃且有强烈竟争意识、凝聚力的半导体企业，交通及优美的环境和完善的产业配套供应链为公司提供了优良的条件。
SGH30N60RUFDTU;中文规格书,Datasheet资料
-- 1733 2430 uJ
--
34
--
ns
--
67
--
ns
--
60
90
ns
--
281 400
ns
--
921
--
uJ
-- 1556 --
uJ
-- 2477 3470 uJ
10
--
--
us
--
85 120 nC
--
17
25
nC
--
39
55
nC
--
14
--
nH
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
E
SGH30N60RUFD 600 ± 20 48 30 90 25 220 10 235 90
-55 to +150 -55 to +150
300
Typ. ----
Max. 0.53 0.83 40
Units V V A A A A A us W W °C °C °C
Units °C/W °C/W °C/W
Symbol VCES VGES
IC
ICM (1) IF IFM TSC PD
TJ Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current Collector Current Pulsed Collector Current
Thermal Characteristics
INFINEON IKP20N60T 说明书
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technologywith soft, fast recovery anti-parallel EmCon HE diode•Very low V CE(sat) 1.5 V (typ.)•Maximum Junction Temperature 175 °C•Short circuit withstand time – 5µs•Designed for :- Frequency Converters- Uninterrupted Power Supply•TrenchStop® and Fieldstop technology for 600 V applicationsoffers :- very tight parameter distribution- high ruggedness, temperature stable behavior- very high switching speed-lowV CE(sat)•Positive temperature coefficient in V CE(sat)• Low EMI•Low Gate Charge•Very soft, fast recovery anti-parallel EmCon HE diode•Qualified according to JEDEC1 for target applications•Pb-free lead plating; RoHS compliant•Complete product spectrum and PSpice Models :/igbt/Type V CE I C V CE(sat),Tj=25°C T j,max Marking PackageIKP20N60T 600V 20A 1.5V 175°C K20T60 PG-TO-220-3-1IKW20N60T 600V 20A 1.5V 175°C K20T60 PG-TO-247-3-21Maximum RatingsParameter SymbolValueUnit Collector-emitter voltage V C E600 VDC collector current, limited by T jmax T C = 25°CT C = 100°C I C4020Pulsed collector current, t p limited by T jmax I C p u l s60 Turn off safe operating area (V CE ≤ 600V, T j≤ 175°C) -60Diode forward current, limited by T jmax T C = 25°CT C = 100°C I F4020Diode pulsed current, t p limited by T jmax I F p u l s60AGate-emitter voltage V G E±20 VShort circuit withstand time2)V GE = 15V, V CC ≤ 400V, T j≤ 150°Ct S C 5 µsPower dissipation T C = 25°C P t o t166 W Operating junction temperature T j-40...+175Storage temperature T s t g-55...+175Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260°C1 J-STD-020 and JESD-0222) Allowed number of short circuits: <1000; time between short circuits: >1s.PG-TO-220-3-1Thermal Resistance Parameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance, junction – caseR t h J C0.9 Diode thermal resistance, junction – case R t h J C D 1.5 Thermal resistance, junction – ambient R t h J A 6240K/WElectrical Characteristic, at T j = 25 °C, unless otherwise specifiedValue Parameter Symbol Conditions min. Typ. max. UnitStatic CharacteristicCollector-emitter breakdown voltage V (B R )C E S V G E =0V, I C =0.2mA 600 - - Collector-emitter saturation voltageV C E (s a t )V G E = 15V, I C =20A T j =25°C T j =175°C- - 1.5 1.9 2.05 - Diode forward voltageV FV G E =0V, I F =20A T j =25°C T j =175°C- - 1.65 1.6 2.05 - Gate-emitter threshold voltage V G E (t h ) I C =290µA,V C E =V G E 4.1 4.9 5.7V Zero gate voltage collector currentI C E S V C E =600V , V G E =0V T j =25°C T j =175°C- -- -40 1000µAGate-emitter leakage current I G E S V C E =0V,V G E =20V - - 100 nA Transconductance g f s V C E =20V, I C =20A - 11 - S Integrated gate resistor R G i n t- ΩDynamic Characteristic Input capacitance C i s s - 1100 - Output capacitanceC o s s - 71-Reverse transfer capacitance C r s s V C E =25V, V G E =0V, f =1MHz-32- pFGate chargeQ G a t e V C C =480V, I C =20A V G E =15V - 120 - nC Internal emitter inductancemeasured 5mm (0.197 in.) from case L E TO-247-3-21 TO-220-3-1 - 13 7- nHShort circuit collector current 1)I C (S C )V G E =15V,t S C ≤5µsV C C = 400V, T j ≤ 150°C- 183.3 - A1) Allowed number of short circuits: <1000; time between short circuits: >1s.2)Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.Switching Characteristic, Inductive Load, at T j =25 °CValueParameter Symbol Conditions min. Typ. max. UnitIGBT Characteristic Turn-on delay time t d (o n ) - 18 - Rise timet r - 14 - Turn-off delay time t d (o f f ) - 199 - Fall time t f - 42 - ns Turn-on energy E o n - 0.31 - Turn-off energy E o f f - 0.46 - Total switching energyE t sT j =25°C,V C C =400V,I C =20A,V G E =0/15V, R G =12 Ω, L σ2)=131nH, C σ2)=31pFEnergy losses include “tail” and diode reverse recovery.- 0.77 -mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 41 - ns Diode reverse recovery charge Q r r - 0.31 - µC Diode peak reverse recovery current I r r m- 13.3 - A Diode peak rate of fall of reverse recovery current during t bdi r r /dtT j =25°C,V R =400V, I F =20A, di F /dt =880A/µs- 711 - A/µsSwitching Characteristic, Inductive Load, at T j =175 °CValueParameter Symbol Conditions min. Typ. max. UnitIGBT Characteristic Turn-on delay time t d (o n ) - 18 - Rise timet r - 18 - Turn-off delay time t d (o f f ) - 223 - Fall time t f - 76 - ns Turn-on energy E o n - 0.51 - Turn-off energy E o f f - 0.64 - Total switching energyE t s T j =175°C,V C C =400V,I C =20A,V G E =0/15V, R G = 12 Ω L σ1)=131nH, C σ1)=31pFEnergy losses include “tail” and diode reverse recovery. - 1.15 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time t r r - 176 - ns Diode reverse recovery charge Q r r - 1.46 - µC Diode peak reverse recovery current I r r m- 18.9 - A Diode peak rate of fall of reverse recovery current during t bdi r r /dtT j =175°CV R =400V, I F =20A, di F /dt =880A/µs- 467 - A/µs1)Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.I C , C O L L E C T O R C U R R E N T10Hz100Hz1kHz10kHz100kHz0A 10A 20A 30A 40A 50A 60AI C , C O L L E C T O R C U R R E N T1V10V100V 1000V0.1A1A10Af , SWITCHING FREQUENCYV CE , COLLECTOR -EMITTER VOLTAGEFigure 1. Collector current as a function ofswitching frequency(T j ≤ 175°C, D = 0.5, V CE = 400V, V GE = 0/+15V, R G = 12Ω) Figure 2. Safe operating area(D = 0, T C = 25°C, T j ≤175°C; V GE =15V)P t o t , P O W E R D I S S I P A T I O N25°C50°C 75°C 100°C 125°C 150°C0W 20W 40W 60W 80W 100W 120W 140W160W I C , C O L L E C T O R C U R R E N T0A5A 10A 15A 20A 25A 30AT C , CASE TEMPERATURET C , CASE TEMPERATUREFigure 3. Power dissipation as a function ofcase temperature (T j ≤ 175°C)Figure 4. Collector current as a function ofcase temperature(V GE ≥ 15V, T j ≤ 175°C)I C , C O L L E C T O R C U R R E N T0V1V2V3V0A10A 20A30A40A50AI C , C O L L E C T O R C U R R E N T0V1V2V 3V 4V0A10A20A30A40A50AV CE , COLLECTOR -EMITTER VOLTAGEV CE , COLLECTOR -EMITTER VOLTAGEFigure 5. Typical output characteristic(T j = 25°C)Figure 6. Typical output characteristic(T j = 175°C)I C , C O L L E C T O R C U R R E N T0A5A 10A 15A 20A 25A 30A 35AV C E (s a t ), C O L L E C T O R -E M I T T S A T U R A T I O N V O L T A G E0°C50°C100°C150°C0.0V0.5V1.0V1.5V2.0V2.5VV GE , GATE-EMITTER VOLTAGET J , JUNCTION TEMPERATUREFigure 7. Typical transfer characteristic(V CE =10V)Figure 8. Typical collector-emittersaturation voltage as a function of junction temperature (V GE = 15V)t , S W I T C H I N G T I M E S0A 5A 10A 15A 20A 25A 30A 35At , S W I T C H I N G T I M E S10Ω20Ω30Ω40Ω50Ω60Ω70ΩI C , COLLECTOR CURRENTR G , GATE RESISTORFigure 9. Typical switching times as afunction of collector current (inductive load, T J =175°C,V CE = 400V, V GE = 0/15V, R G = 12Ω, Dynamic test circuit in Figure E) Figure 10. Typical switching times as afunction of gate resistor (inductive load, T J = 175°C,V CE = 400V, V GE = 0/15V, I C = 20A, Dynamic test circuit in Figure E)t , S W I T C H I N G T I M ES25°C50°C75°C100°C 125°C 150°CV G E (t h ), G A T E -E M I T T T R S H O L D V O L T A GE-50°C0°C 50°C 100°C 150°CT J , JUNCTION TEMPERATURET J , JUNCTION TEMPERATUREFigure 11. Typical switching times as afunction of junction temperature (inductive load, V CE = 400V, V GE = 0/15V, I C = 20A, R G =12Ω, Dynamic test circuit in Figure E)Figure 12. Gate-emitter threshold voltage asa function of junction temperature (I C = 0.29mA)E , S W I T C H I N G E N E R G Y L O S S E S0A5A10A15A20A25A30A35A0.0mJ0.4mJ0.8mJ1.2mJ1.6mJ2.0mJ 2.4mJE , S W I T C H I N G E N E R G Y L O S S E S0Ω15Ω30Ω45Ω60Ω0.0m0.4m 0.8m 1.2m 1.6m 2.0m 2.4mI C , COLLECTOR CURRENTR G , GATE RESISTORFigure 13. Typical switching energy lossesas a function of collector current (inductive load, T J = 175°C,V CE = 400V, V GE = 0/15V, R G = 12Ω, Dynamic test circuit in Figure E) Figure 14. Typical switching energy lossesas a function of gate resistor (inductive load, T J = 175°C,V CE = 400V, V GE = 0/15V, I C = 20A, Dynamic test circuit in Figure E)E , S W I T C H I N G E N E R G Y L O S S E S25°C50°C 75°C 100°C 125°C 150°C0.0mJ0.2mJ0.4mJ0.6mJ0.8mJ1.0mJE , S W I T C H I N G E N E R G Y L O S S E S0.0m 0.2m 0.4m 0.6m 0.8m 1.0m 1.2m 1.4m 1.6m 1.8m 2.0mT J , JUNCTION TEMPERATUREV CE , COLLECTOR -EMITTER VOLTAGEFigure 15. Typical switching energy lossesas a function of junction temperature(inductive load, V CE = 400V,V GE = 0/15V, I C = 20A, R G = 12Ω, Dynamic test circuit in Figure E)Figure 16. Typical switching energy lossesas a function of collector emitter voltage(inductive load, T J = 175°C,V GE = 0/15V, I C = 20A, R G = 12Ω, Dynamic test circuit in Figure E)V G E , G A T E -E M I T TE R V O L T A G E0V5V10V15Vc , C A P A C I T A NC EQ GE , GATE CHARGEV CE , COLLECTOR -EMITTER VOLTAGEFigure 17. Typical gate charge(I C =20 A)Figure 18. Typical capacitance as a functionof collector-emitter voltage (V GE =0V, f = 1 MHz)I C (s c ), s h o r t c i r c u i t C O L L E C T O R C U R R E N T12V14V 16V 18V0A 50A 100A 150A 200A 250A 300A t S C , S H O R T C I R C U I T W I T H ST A N D T I M E10V11V 12V 13V 14V0µs2µs4µs6µs8µs10µs12µsV GE , GATE -EMITTETR VOLTAGEV GE , GATE -EMITETR VOLTAGEFigure 19. Typical short circuit collectorcurrent as a function of gate-emitter voltage(V CE ≤ 400V, T j ≤ 150°C)Figure 20. Short circuit withstand time as afunction of gate-emitter voltage (V CE =600V , start at T J =25°C, T Jmax <150°C)Z t h J C , T R A N S I E N T T H E R M A L R E S I S T A N C E1µs 10µs 100µs 1ms 10ms 100ms10-2K/W10-1K/WZ t h J C , T R A N S I E N T T H E R M A L R E S I S T A N C E1µs10µs 100µs 1ms 10ms 100ms10-210-1100t P , PULSE WIDTHt P , PULSE WIDTHFigure 21. IGBT transient thermal resistance(D = t p / T )Figure 22. Diode transient thermalimpedance as a function of pulse width (D =t P /T )t r r , R E V E R S E R E C O V E R Y T I M E0ns50ns100ns150ns200ns250nsQ r r , R E V E R S E R E C O V E R Y C H A R G E600A/µs900A/µs1200A/µs0.2µC0.4µC 0.6µC 0.8µC 1.0µC 1.2µC 1.4µC 1.6µC1.8µCdi F /dt , DIODE CURRENT SLOPEdi F /dt , DIODE CURRENT SLOPEFigure 23. Typical reverse recovery time asa function of diode current slope (V R =400V, I F =20A,Dynamic test circuit in Figure E)Figure 24. Typical reverse recovery chargeas a function of diode current slope(V R = 400V, I F = 20A,Dynamic test circuit in Figure E)I r r , R E V E R S E R E C O V E R Y C U R R E N T600A/µs 900A/µs 1200A/µs0A4A 8A 12A 16A20A 24Ad i r r /d t , D I O D E P E A K R A T E O F F A L L O F R E V E R S E R E C O V E R Y C U R R E NTdi F /dt , DIODE CURRENT SLOPEdi F /dt , DIODE CURRENT SLOPEFigure 25. Typical reverse recovery currentas a function of diode current slope(V R = 400V, I F = 20A,Dynamic test circuit in Figure E) Figure 26. Typical diode peak rate of fall ofreverse recovery current as a function of diode current slope (V R =400V, I F =20A,Dynamic test circuit in Figure E)I F , F O R W A R D C U R R E NT0V 1V 2V0A10A20A30A40A50AV F , F O R W A R D V O L T A G E0°C50°C 100°C 150°C0.0V0.5V1.0V1.5V2.0VV F , FORWARD VOLTAGET J , JUNCTION TEMPERATUREFigure 27. Typical diode forward current asa function of forward voltageFigure 28. Typical diode forward voltage as afunction of junction temperaturePG-TO-220-3-1PG-TO247-3-21Edition 2006-01Published byInfineon Technologies AG81726 München, Germany© Infineon Technologies AG 9/12/07.All Rights Reserved.Attention please!The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ().WarningsDue to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to supportand/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.。
F20UP60DN中文资料
FFPF20UP60DN Rev. A
3
元器件交易网
FFPF20UP60DN
Mechanical Dimensions
TO-220F
3.30 ±0.10
10.16 ±0.20 (7.00)
ø3.18 ±0.10
2.54 ±0.20 (0.70)
10
100
200 300 400 Reverse Voltage, VR [V]
500
600
Figure 3. Typical Junction Capacitance
125
Reverse Recovery Time, trr [ns]
Typical Capacitance at 0V = 124 pF
®
PDP-SPM™ Power220®
Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6
Figure 4. Typical Reverse Recovery Time vs. di/dt
160
Capacitances , Cj [pF]
100
120
TC = 100 C
o
75
50
80
25
TC = 25 C
o
0 0.1
1 10 Reverse Voltage, VR [V]
100
20吨一拖二中频炉技术参数英文翻译对照
20吨一拖二中频炉技术参数英文翻译对照为我们节省电气电炉工程师们的时间和精力，现将中频炉技术参数翻译英文希望查阅。
20吨一拖二中频炉/10000KW/350Hz中频炉（24脉中频炉）20吨一拖二中频炉功率为10000 kw的24脉中频电源配20吨中频熔炼炉两台。
用二台5000KVA专用整流变压器供10000KW中频电源使用，用于铸钢熔炼炉熔炼。
此套中频炉符合GB5959.3《电热设备的安全第三部分对感应和导电加热设备以及感应熔炼设备的特殊要求》、GB10067.3《电热设备基本技术条件第三部分感应电热设备》和JB42《中频无芯感应炉》的要求。
20 ton intermediate frequency furnace20 ton/10000KW/350Hz 24 pulse intermediate frequency furnace（24 pulse）Our company designed 10000kW 24 pulse intermediate frequency power source supplied with two 20-ton intermediate frequency melting furnace。
The 10000KW intermediate frequency power source are supplied with two 5000KVA special rectifier transformer for melting。
The set of intermediate frequency furnace conforms standards of GB5959.3-《Part III of the safety of electrical equipment for induction and conduction heating and induction melting equipment under special requirements》，GB10067.3-《Part III of electric equipment basic technical conditions for induction heating equipment》，and JB42- 《Intermediate frequency Coreless Induction Furnace》。
FKPF12N60中文资料
FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80Electrical Characteristics T C =25°C unless otherwise notedNotes:1.Gate Open2.Measurement using the gate trigger characteristics measurement circuit3.The critical-rate of rise of the off-state commutating voltage is shown in the table below4.The contact thermal resistance R TH(c-f) in case of greasing is 0.5 °C/WQuadrant Definitions for a TriacSymbol ParameterTest ConditionMin.Typ.Max.Units I DRM Repetieive Peak Off-State Current V DRM applied--20µA V TMOn-State VoltageT C =25°C, I TM =17AInstantaneous measurement-- 1.5V V GTGate Trigger Voltage (Note 2)I V D =6V, R L =6Ω, R G =330ΩT2(+), Gate (+)-- 1.5V II T2(+), Gate (-)-- 1.5V IIIT2(-), Gate (-)-- 1.5V I GT Gate Trigger Current (Note 2)I V D =6V, R L =6Ω, R G =330ΩT2(+), Gate (+)--30mA II T2(+), Gate (-)--30mA IIIT2(-), Gate (-)--30mA V GD Gate Non-Trigger Voltage T J =125°C, V D =1/2V DRM 0.2--V I H Holding Current V D = 12V, I TM = 1A 50mA I L Latching Current I, III V D = 12V, I G = 1.2I GT 50mA II70mA dv/dt Critical Rate of Rise of Off-State VoltagV DRM = Rated, T j = 125°C,Exponential Rise300V/µs (dv/dt)CCritical-Rate of Rise of Off-State Commutating Voltage (Note 3)10--V/µsV DRM (V)Test ConditionCommutating voltage and current waveforms(inductive load)FKPF12N601. Junction Temperature T J =125°C2. Rate of decay of on-state commutating current (di/dt)C = - 6.0A/ms3. Peak off-state voltage V D = 400VFKPF12N80Supply VoltageMain CurrentMain VoltageTimeTimeTime V D(dv/dt)C(di/dt)CT2 Positive+-T2 NegativeQuadrant IIQuadrant IQuadrant IIIQuadrant IVI GT -+I GT(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。
大功率元器件替换手册
大功率元器件替换手册大功率元器件替换手册IRF630B/IRF640B IRF730B/ IRF740B SSH45N20B IRF830B/IRF840B IRFP250B/ IRFP450B IRFP460CIRFP460A SSH70N10AQ型 MOSFET：Rds(on)为标准值FQP50N06 FQP65N06 FQP85N06FQP90N08 80V/71A/0.012ΩFQP33N10 100V/33A/0.04ΩFQP70N10 100V/57A/ 0.019ΩFQP46N15 150V/46A/0.12FQP34N20 200V/34A/0.065FQP13N50 500V/13A/0.33Fqa62n25 250v/62a/0.029FQP18N20V2 200V/18A/0.14ΩFQP13N50 500V/13A/ 0.33ΩFQPF12N60 600V/12A/ 0.55ΩFQP4N90 900V/4.2A/2.7ΩFQP7N80 800V/6.6A/1.2ΩFQA160N08 80V/160A/0.0056ΩFQA70N10 100V/70A/0.019ΩFQA140N10 100V/140A/0.008ΩFQA90N15 150V/90A/0.014ΩFQA34N20 200V/34A/0.06ΩFQA48N20 200V/48A/0.037ΩFQA65N20 200V/65A/0.025ΩFQA40N25 250V/40A/0.051ΩFQA55N25 250V/55A/0.03ΩFQA17N40 400V/17A/0.21ΩFQA35N40 400V/35A/0.08ΩFQA16N50 500V/16A/0.25ΩFQA18N50V2 500V/20A/0.265ΩFQA13N80 800V/13A/0.58ΩFQA7N90 900V/7.4A/1.2ΩFQA9N90C 900V/9A/1.12ΩFQA11N90C 900V/11A/0.91Ω新的内置软特性超快二极管型Q-FET FQA24N50F 500V/24A/0.156ΩFQA28N50F 500V/28A/0.126ΩFQL40N50F 500V/40A/0.085Ω同步整流用低压逻辑电平FETFQP140N03LP沟道MOSFET：SFP9530/9540 -100V/-12A/-19A SFP9630/9640 -100V/-6.5A/-11AFQP17/47P06 -60V/-17A/-47A FQP12P20 –200V/-11.5AFQP3P50 -500V/-2.7ADNI系列DFU/D1N60 DFP/F2N60DFF/P4N60 DFF/P7N60WISDOM系列WFP50N06WFP70N06WFP75N08新一代FRD--超快恢复二极管: FFPF06U20DN 200V/2*6A/40ns/TO220F FFPF10U20DN 200V/2*10A/40ns/TO220F FFA15U20DN 200V/2*15A/40ns/TO3P FFA30U20DN 200V/2*30A/40ns/TO3P FFPF10U30DN 200V/2*10A/60ns/TO220F FFP06U40DN 400V/2*6A/50ns/TO220 FFA15U40DN 400V/2*15A/50ns/TO3P FFA20U40DN 400V/2*20A/50ns/TO3P FFPF20U60S 600V/20A/90ns/TO220F FFPF30U60S 600V/30A/90ns/TO220F FFPF10U60DN 600V/2*10A/90ns/TO220F FFA20U60DN 600V/2*20A/90ns/TO3P FFA30U60DN 600V/2*30A/90ns/TO3P FFA60U60DN 600V/2*60A/110ns/TO3P肖特基二极管:FYP1045DN FYP1545DNFYP2045DN FYAF3045DNFYP2006DN FYP1010DNFYP2010DN原Intersil 超快恢复二极管：RHRP8120 1200V/11A/55ns/TO220RHRP15120 1200V/15A/65ns/TO220RHRP30120 1200V/30A/65ns/TO220RHRG30120 1200V/30A/65ns/TO247RHRG75120 1200V/75A/65ns/TO247新一代专为高频开关电源PFC电路所设计超快软恢复隐形二极管：ISL9R860P2 600V/8A/TO220ISL9R1560P2 600V/15A/TO220ISL9K1560G3 600V/2*15A/TO247ISL9R3060G2 600V/30A/TO247ISL9K3060G3 600V/2*30A/TO247ISL9R8120P2 1200V/8A/TO220ISL9R18120G2 1200V/18A/TO247ISL9R30120G2 1200V/30A/TO247一、IGBT单管及模块，600V 改进的两单元模块系列特优价供货：FMG2G100US60 600V/100AFMG2G150US60 600V/150AFM2G200US60 600V/200AFM2G300US60 600V/300AFM2G400US60 600V/400A新一代高速智能6单元模块—SPM FSBB15CH60 600V/15AFSBB20CH60 600V/20AFSBB30CH60 600V/30AFSAM15SH60 600V/15AFSAM30SM60A 600V/30单管UF系列，高速型SGP13N60UFD 600V/13A/TO220SGH23N60UFD 600V/23A/TO3PSGH40N60UFD 600V/40A/TO3PSGH80N60UFD 600V/80A/TO3P SGL160N80UFD 600V/160A/TO264 10us短路时间，适用于马达调速等感性负载SGP10N60RUFD 600V/16A/75W/TO220 SGH15N60RUFD 600V/24A/160W/TO3P SGH20N60RUFD 600V/32A/195W/TO3P SGH30N60RUFD 600V/48A/235W/TO3P SGL50N60RUFD 600V/80A/250W/TO264 SGL60N90DG3 900V/60A/2.0V/TO264 FGL60N100D 1000V/60A/2.2V/TO264 1200 RUF系列硅直接键合技术单管FGA15N120AND 1200V/15A/192W/TO3P FGA25N120ANTD 1200V/50A/312W/TO3P SGL25N120RUFD 1200V/40A/270W/TO264 SGL40N150D 1500V/40A/200W/TO264FGL60N170D 1700V/60A/200W/TO264原Intersil专为高频开关电源所设计HGTG12N60A4D 600V/54A/167W/Tf18ns HGTG30N60A4D 600V/75A/463W/Tf38ns 原INTERSIL NPT工艺大功率IGBT单管HGTG10N120BND 1200V/35A/298W/Tf100ns HGTG11N120CND 1200V/43A/298W/Tf190ns HGTG18N120BND 1200V/54A/390W/Tf90ns二、智能电源开关管--SPSKA5H0165RN KA5H0280R KA5L/5H0380R 100W~250W : KA1M0680RB, KA1M0880B三、新一代FRD--超快恢复二极管: FFPF06U20DN 200V/2*6A/40ns/TO220F FFPF10U20DN 200V/2*10A/40ns/TO220F FFA15U20DN 200V/2*15A/40ns/TO3PFFA30U20DN 200V/2*30A/40ns/TO3P FFPF10U30DN 200V/2*10A/60ns/TO220F FFP06U40DN 400V/2*6A/50ns/TO220FFA15U40DN 400V/2*15A/50ns/TO3PFFA20U40DN 400V/2*20A/50ns/TO3PFFPF20U60S 600V/20A/90ns/TO220FFFPF30U60S 600V/30A/90ns/TO220FFFPF10U60DN 600V/2*10A/90ns/TO220FFFA20U60DN 600V/2*20A/90ns/TO3PFFA30U60DN 600V/2*30A/90ns/TO3PFFA60U60DN 600V/2*60A/110ns/TO3P肖特基二极管:FYP1045DN FYP1545DN FYP2045DNFYAF3045DN 45V/30A/TO3PFYP2006DN 60V/20A/ TO220FYP1010DN 100V/10A/TO220FYP2010DN 100V/20A/TO220原Intersil 超快恢复二极管：RHRP8120 1200V/11A/55ns/TO220RHRP15120 1200V/15A/65ns/TO220RHRP30120 1200V/30A/65ns/TO220RHRG30120 1200V/30A/65ns/TO247RHRG75120 1200V/75A/65ns/TO247新一代专为高频开关电源PFC电路所设计超快软恢复隐形二极管：ISL9R860P2 600V/8A/TO220ISL9R1560P2 600V/15A/TO220ISL9K1560G3 600V/2*15A/TO247ISL9R3060G2 600V/30A/TO247ISL9K3060G3 600V/2*30A/TO247ISL9R8120P2 1200V/8A/TO220 ISL9R18120G2 1200V/18A/TO247 ISL9R30120G2 1200V/30A/TO247。
SVF20N60F(PN)说明书_1.1-L
产品规格分类
产品名称 封装形式 打印名称 材料
包装 SVF20N60F TO-220F-3L SVF20N60F 无铅 料管 SVF20N60PN
TO-3PN
20N60
无铅
料管
20A 、600V N 沟道增强型场效应管
描述
SVF20N60F/PN 是N 沟道增强型高压功率MOS 场效应晶体管，采用士兰微电子的F-Cell TM 平面高压VDMOS 工艺技术制造。
先进的工艺及条状的原胞设计结构使得该产品具有较低的导
极限参数(除非特殊说明，T C=25°C)
源-漏二极管特性参数
典型特性曲线
图1. 输出特性图2. 传输特性
0.1110100
漏源电压– V DS(V)0102050
总栅极电荷– Q g(nC)
40
3060
典型特性曲线（续）
图7. 击穿电压vs.温度特性图8. 导通电阻vs.温度特性
255075100125150
壳温– T C(°C)
典型测试电路
12V
栅极电荷量测试电路及波形图
封装外形图
声明：
•士兰保留说明书的更改权，恕不另行通知！客户在下单前应获取最新版本资料，并验证相关信息是否完整和最新。
•任何半导体产品特定条件下都有一定的失效或发生故障的可能，买方有责任在使用Silan产品进行系统设计和整机制造时遵守安全标准并采取安全措施，以避免潜在失败风险可能造成人身伤害或财产损失情况的发生！
•产品提升永无止境，我公司将竭诚为客户提供更优秀的产品！。
FCPF20N60中文资料
FCP20N60 / FCPF20N60 600V N-Channel MOSFETFCP20N60 / FCPF20N60 600V N-Channel MOSFETPackage Marking and Ordering InformationElectrical Characteristics T C= 25°C unless otherwise notedNotes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. I AS = 10A, V DD = 50V, R G = 25Ω, Starting T J = 25°C3. I SD ≤ 20A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°C4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical CharacteristicsDevice MarkingDevicePackageReel SizeTape WidthQuantityFCP20N60FCP20N60TO-220--50FCPF20N60FCPF20N60TO-220F--50SymbolParameterConditionsMinTypMax UnitsOff Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D = 250µA, T J = 25°C 600----V V GS = 0V, I D = 250µA, T J = 150°C --650--V ∆BV DSS / ∆T J Breakdown Voltage Temperature CoefficientI D = 250µA, Referenced to 25°C --0.6--V/°C BV DS Drain-Source Avalanche Breakdown VoltageV GS = 0V, I D = 20A --700--V I DSS Zero Gate Voltage Drain Current V DS = 600V, V GS = 0V V DS = 480V, T C = 125°C --------110µA µA I GSSF Gate-Body Leakage Current, Forward V GS = 30V, V DS = 0V ----100nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30V, V DS = 0V -----100nA On CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250µA 3.0-- 5.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10V, I D = 10A --0.150.19Ωg FS Forward Transconductance V DS = 40V, I D = 10A (Note 4)--17--S Dynamic CharacteristicsC iss Input Capacitance V DS = 25V, V GS = 0V,f = 1.0MHz--23703080pF C oss Output Capacitance--12801665pF C rss Reverse Transfer Capacitance --95--pF C oss Output CapacitanceV DS = 480V, V GS = 0V, f = 1.0MHz --6585pF C oss eff.Effective Output Capacitance V DS = 0V to 400V, V GS = 0V --165--pF Switching Characteristicst d(on)Turn-On Delay Time V DD = 300V, I D = 20A R G = 25Ω(Note 4, 5)--62135ns t r Turn-On Rise Time --140290ns t d(off)Turn-Off Delay Time --230470ns t f Turn-Off Fall Time --65140ns Q g Total Gate Charge V DS = 480V, I D = 20A V GS = 10V(Note 4, 5)--7598nC Q gs Gate-Source Charge --13.518nC Q gd Gate-Drain Charge--36--nC Drain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----20A I SM Maximum Pulsed Drain-Source Diode Forward Current ----60A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 20A---- 1.4V t rr Reverse Recovery Time V GS = 0V, I S = 20AdI F /dt =100A/µs (Note 4)--530--ns Q rrReverse Recovery Charge--10.5--µCTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FCP20N60 / FCPF20N60 600V N-Channel MOSFETDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which,(a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®UniFET™VCX™Wire™ACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™。
IGBT
STGW40N120KD
STGW40NC60WD
FGH60N60UFDTU
FSAM15SM60A
STGY50NC60WD
HGTG27N120BN
IRG4PC30FDPBF
IRGP4066DPBF
HGTG40N60A4
STGD7NC60HT4
STGW20NC60VD
FGA25N120ANTDTU
2SC0435T2A0-17
STGF7NB60SL
FNA41560
STGW60H65F
STGB20NC60V
STGIPL14K60
STGW35NC120HD
HGTP10N120BN
STGIPS14K60T
IRG7PH46UDPBF
IRG4RC10UTRPBF
IRGP4062DPBF
FGPF4533
SKW15N60
IRG7I313UPBF
IRG4PC40UD-EPBF
FGH80N60FD2TU
IRG4PC30FPBF
STGP18N40LZ
IRG7PH42U-EP
IRGP4066-EPBF
HGTG10N120BND
IRGP4063DPBF
FGH75N60UFTU
STGD10NC60KT4
STGIPL20K60
STGIPS20K60
STGWA45HF60WDI
FGL60N100BNTD
STGD18N40LZT4
STGIPS10K60T
IRG7PH42UPBF
HGTG30N60A4
STGW45HF60WD
20装载机参数
20装载机参数
20号装载机是一款国产装载机，具有较高的性能与质量，具备多个车型选择，可以灵活适应各种地形和环境。
20号装载机整套装载总重量可达3.6吨，装载能力最大可达2.2吨。
配备有一个6.5千瓦的柴油发动机，最大输出功率为47.7千瓦，燃油消耗率低，具有良好的综合经济性。
型号为HaixiA6-84S，大中型柴油发动机可达168HP，最大扭矩为815N/M，装载机的动力系统可以实现安静的运作。
20号装载机的操作室采用优质的瓷砖，机架采用韩国制造的无毒耐冲击金属。
手柄采用新型无毒非塑料材料，具有滑动、耐磨、耐冲击等优点，外观要求紧凑、小巧、完美，设计使用更为紧凑却不失实用。
20号装载机的传送系统具有强大的仰角攀爬能力，满足各种工作场合的需要。
采用双联链系统，可克服恶劣环境如草莓大量的软土下的低抓取能力，实现抗震的同时，又能达到良好的抓取能力。
装载可
以在180度的范围内旋转，可实现各个方向的移动，提高工作灵活性，使工作效率大幅提升。
除此之外，20号装载机还采用了抗压气缸驱动臂，提高抓取力，
抗衡外来冲撞力，保障装载有足够的抗击能力，符合各种地形环境的
要求。
总的来说，20号装载机是一款卓越的装载机，它的高性能、耐用
及紧凑实用等优点，使得它更符合用户的需求，也是众多工程作业和
节能环保的首选装载产品。
常见钢号对照表
1 总则1.1 范围本文件适用于石油化工设计中的国内、外管道材料的代用。
1.2 规范性引用文件GB 150 《钢制压力容器》2 常用钢号对照表2.1 管子材料美国规范中国规范日本规范德国规范A53-A 10（GB/T 8163）（GB 9948）STB 340St37.0（1.0254）A53-B 20（GB/T 8163）（GB 9948）STPT 370STS 370St35.0（1.0308）St35.4（1.0309）A53-C STPG 410STPT 410STS 410STB 410St44.0（1.0256）St45.0（1.0408）St45.4（1.0418）St45.8（1.0405）C22（1.0611）A106-A 10（GB/T 8163）（GB 9948）STPB 340St37.0（1.0254）A106-B 20（GB/T 8163）（GB 9948）20G（GB 5310）STPT 370STS 370STB 370STPG 410STPT 410STS 410STB 410St35.0（1.0308）St35.4（1.0309）St35.8（1.0305）St44.0（1.0256）St45.0（1.0408）St45.4（1.0418）St45.8（1.0405）A106-C 16Mn（GB/T 8163）STPT 480STS 48017Mn4（1.0481）St52.0（1.0831）St52.4（1.0382）碳钢A120Q235（GB/T 3092）G3452 SGP1629 St00管子（续表）材料美国规范中国规范日本规范德国规范A134Q235（GB/T 3092）STPY 400St33.0（1.0035）A139Q235（GB/T 3092）STPY 400St33.0（1.0035）A333-1STPL 380TTSt35N （1.0356）碳钢A333-6STBL 38016Mn（-40℃）（GB/T 8163）STS 480（-45℃）17Mn4（1.0481）A333-3STPL 450STBL 45010Ni14（1.5637）A333-8STPL 690STBL 690X8Ni9（1.5662）A335-P116Mo15Mo3STPA 12STBA 1215Mo3（1.5415）A335-P212CrMo（GB 5310）（GB 9948）STPA 20STBA 2013CrMo44（1.7335）A335-P51Cr5Mo（GB 5310）（GB 9948）STPA 25STBA 2512CrMo195（1.7380）A335-P9STPA 26STBA 26X12CrMo91（1.7386）A335-P1112Cr1MoV（GB 5310）STPA 23STBA 2313CrMo44（1.7335）A335-P1215CrMo（GB 9948）STPA 22STBA 2213CrMo44（1.7335）A335-P2212Cr2Mo（GB 5310）10MoWVNbSTPA 24STBA 2410CrMo910（1.7380）低合金钢A335-P91KA-STPA 28 ATBA 28A312-TP3040Cr19Ni9（GB 12771）0Cr18Ni9（GB 13296）（GB/T 14976）SUS304TPX5CrNi189（1.4301）A312-TP304H 1Cr18Ni9（GB 13296）1Cr19Ni9（GB 5310）（GB 9948）SUS304HTPX5CrNi189（1.4301）X12CrNi188（1.4300）不锈钢A312-TP304L 00Cr19Ni10（GB 13296）（GB/T 14976）00Cr19Ni11（GB 12771）SUS304LTPX2CrNi1810（1.4305）X2CrNi1911（1.4306）管子（续表）材料美国规范中国规范日本规范德国规范A312-TP3090Cr23Ni13（GB 13296）（GB/T 14976）SUS309STPX7CrNi2314（1.4833）A312-TP3100Cr25Ni20（GB 12771）（GB 13296）（GB/T 14976）SUS310STPX12CrNi2521（1.4845）A312-TP3160Cr17Ni12Mo2（GB 13296）（GB/T 14976）SUS316TPX5CrNiMo17133（1.4436）X5CrNiMo17122（1.4401）A312-TP316H 1Cr17Ni12Mo2（GB 13296）（1Cr18Ni12Mo2Ti）（GB/T 14976）SUS316HTP X5CrNiMo17133（1.4436）A312-TP316L00Cr17Ni14Mo2（GB 13296）（GB/T 14976）SUS316LTPX2CrNiMo18143（1.4435）A312-TP3170Cr19Ni13Mo3（GB 13296）（GB/T 14976）SUS317TPX5CrNiMo17133（1.4449）A312-TP317L 00Cr19Ni13Mo3（GB 13296）（GB/T 14976）SUS317LTPX2CrNiMo18164（1.4438）A312-TP3210Cr18Ni10Ti（GB 13296）（GB/T 14976）SUS321TPX6CrNiTi1810（1.4541）A312-TP321H 1Cr18Ni9Ti（GB/T 14976）（GB 12771）（GB 13296）SUS321HTPX6CrNiTi1810（1.4541）A312-TP3470Cr18Ni11Nb（GB 12771）（GB 13296）（GB/T 14976）SUS347TPX6CrNiTi1810（1.4550）A312-TP347H 1Cr18Ni11Nb（GB 12771）（GB 13296）1Cr19Ni11Nb（GB 5310）（GB 9948）SUS347HTP X6CrNiNb1810（1.4550）不锈钢A312-TP4100Cr13（GB/T 14976）SUS410TPX10Cr13（1.4006）2.2 板材材料美国规范中国规范日本规范德国规范A283-C SS 400St37.2（1.0037）A283-D Q235-B（GB/T 700）SS 400St42.2（1.0044）A283-D Q235-C（GB/T 700）SM 400AA515Gr.55H I （1.0345）A515Gr.6020g,（GB 713）20R（GB 6654）20（GB 710）SB 410SPV 235H II （1.0425）A515Gr.6522g,12Mng （GB 713）SB 45017Mn4（1.0481）A515Gr.70SB 48019Mn6A516-6020g（GB 713）20R（GB 6654）SM 400B SPV 235ASt 41A516-6522g,16Mng （GB 713）SM 400B SPV 235ASt 45 碳钢A516-70SM 490B SPV 315ASt 52A662-C16Mng（GB 713）16MnR（GB 6654）SPV 35519Mn6（1.0473）A662-C 16MnDR（GB 3531）SLA325SLA360A204-A SB 450M 15Mo3（1.5415）A204-B SB 480M 16Mo5A387-2SCMV1A387-12SCMV2A387-11SCMV3A387-22SCMV4A387-21SCMV5低 合 金 钢A387-5SCMV6A240-TY3040Cr19Ni9（GB 4237）（GB 4238）（GB 3280）SUS304X5CrNi1810（1.4301）A240-TY304L00Cr19Ni10（GB 3280）（GB 4237）SUS304LX2CrNi1911（1.4306）不 锈 钢A240-TY309S （H ）0Cr23Ni13（GB 4237）（GB 4238）（GB 3280）SUS309SX7CrNi2314（1.4833）板材（续表）材料美国规范中国规范日本规范德国规范A240-TY310S （H）0Cr25Ni20（GB 4237）（GB 4238）（GB 3280）SUS310SX12CrNi2521（1.4845）A240-TY3160Cr17Ni12Mo2（GB 4237）（GB 4238）（GB 3280）SUS316X5CrNiMo17133（1.4436）X5CrNiMo17122（1.4401）A240-TY316L 00Cr17Ni14Mo2（GB 4237）（GB 3280）SUS316LX2CrNiMo17132（1.4404）X2CrNiMo18143（1.4435）A240-TY3170Cr19Ni13Mo3（GB 4237）（GB 4238）（GB 3280）SUS317A240-TY317L 00Cr19Ni13Mo3（GB 4237）（GB 3280）SUS317LA240-TY3210Cr18Ni10Ti（GB 4237）（GB 4238）（GB 3280）SUS321X6CrNiTi1810（1.4541）A240-TY321H 1Cr18Ni9Ti（GB 4237）（GB 4238）（GB 3280）SUS321HX6CrNiTi1810（1.4541）A240-TY3470Cr18Ni11Nb（GB 4237）（GB 4238）（GB 3280）SUS347X6CrNiNb1810（1.4550）A240-TY4101Cr13（GB 4237）（GB 4238）（GB 3280）SUS410X15Cr13（1.4024）不锈钢A240-TY4301Cr17（GB 4237）（GB 3280）SUS430X6Cr17（1.4016）材料美国规范中国规范日本规范德国规范A234-WPB20PG 37020GPG 410PS 370PS 410PT 370PT 410A234-WPC PS 480PT 480 碳钢A420-WPL6PL 380TTST 35N/V A234-WP116Mo PA 1216Mo5A234-WP1215CrMo PA 2214CrMo44A234-WP1112Cr1MoV PA 2314CrMo44A234-WP2212Cr2Mo PA 2410CrMo910A234-WP51Cr5MoPA 2512CrMo19.5A234-WP9PA 26A420-WPL3PL 450 低 合 金钢A420-WPL8PL 690A403-WP3040Cr19Ni9SUS304A403-WP304H 1Cr18Ni9SUS304H A403-WP304L 00Cr19Ni10SUS304L A403-WP3160Cr17Ni12Mo2SUS316A403-WP316H 1Cr17Ni14Mo2SUS316H A403-WP316L 00Cr17Ni14Mo2SUS316L A403-WP3170Cr19Ni13Mo3SUS317A403-WP317L 00Cr17Ni14Mo3SUS317L A403-WP3210Cr18Ni10Ti SUS321A403-WP321H 1Cr18Ni11Ti SUS321H A403-WP3470Cr19Ni11Nb SUS347A403-WP347H 1Cr19Ni11Nb SUS347H A403-WP3090Cr23Ni13SUS309 不锈 钢A403-WP3100Cr25Ni20SUS310材料美国规范中国规范日本规范德国规范A105SF440A SFVC2A SF490A C22N C22.320Mn5A181-I S25C St44.2A181-II S30C St50.22碳 钢A350-LF2SFL2TTSt41VA182-F116Mo SFVA F116Mo5（1.5423）A182-F212CrMo（JB 4726）SFVA F2A182-F51Cr5Mo（JB 4726）SFVA F5B 12CrMo195（1.7366）A182-F91Cr9Mo SFVA F9X12CrMo91A182-F1112Cr1MoV （JB 4726）SFVA F11A 16CrMo4413CrMo44A182-F1215CrMo（JB 4726）SFVA F1216CrMo4413CrMo44A182-F2212Cr2Mo1（JB 4726）SFVA F22B 10CrMo910（1.7380）低 合 金 钢A350-LF3SFL310Ni14（1.5637）A182-F6a Class1SUS410X10Cr13A182 Cr.F3040Cr18Ni9（JB 4728）SUS F304X5CrNi1810（1.4301）A182 Cr.F304H SUS F304H X5CrNi1810（1.4301）A182 Cr.F304L00Cr19Ni10（JB 4728）SUS F304L X2CrNi1911（1.4306）A182-F310Cr25Ni20SUS F310A182 Cr.F3160Cr17Ni12Mo20Cr18Ni12Mo2Ti （JB 4728）SUS F316X5CrNiMo17133（1.4436）X5CrNiMo17122（1.4401）A182 Cr.F316HSUS F316HX5CrNiMo17133A182 Cr.F316L00Cr17Ni14Mo2（JB 4728）SUS F316LX2CrNiMo18143（1.4435）X2CrNiMo17132（1.4404）X2CrNiMo17122（1.4404）A182-F317X6CrNi1811（1.4948）A182-F3210Cr18Ni10Ti （JB 4728）SUS F321X6CrNiTi1810（1.4541）A182-F321H 1Cr18Ni9Ti （JB 4728）SUS F321H X6CrNiTi1810（1.4541）A182-F347H SUS F347H X6CrNiNb1810（1.4550） 不锈钢A182-F347SUS F347X6CrNiNb1810（1.4550）材料美国规范中国规范日本规范德国规范A216-WCAWCA（GB 11352）SCPH1GS-38（1.0416）A216-WCB WCB（GB 11352）SCPH2GS-45（1.0446）A216-WCC WCC（GB 11352）GS-52（1.0552） 碳 钢A352-LCB SCPL1GS-CK25A217-WC1ZG20CrMo SCPH11GS-22Mo4（1.5419）A217-WC6WC6（ZG20CrMoV ）SCPH21GS-17CrMo55（1.7357）A217-WC9WC9（ZG15Cr1Mo1V ）SCPH32GS-18CrMo910（1.7379）A217-C5C5ZG2Cr5Mo SCPH61GS-12CrMo195A217-C12C12A352-LC1SCPL11GS-Ck16GS-Ck24A352-LC2SCPL21GS-10Ni6 低 合 金 钢A352-LC3SCPL31GS-10Ni14A217-CA15ZG1Cr13（GB 2100）SCS1G-X20Cr14A351-CF3CF3*（ZG00Cr18Ni10）（GB 2100）SCS19AG-X2CiNi189（1.4306）A351-CF8CF8*（ZG0Cr18Ni9）（GB 2100）SCS13A G-X6CiNi189（1.4308）A351-CF3M CF3M*（ZG00Cr17Ni14Mo2）SCS16A A351-CF8M CF8M*（ZG0Cr18Ni12Mo2Ti ）（GB 2100）SCS14A G-X6CrNiMo1810（1.4408）A351-CF8CCF8C SCS21G-X5CrNiNb189（1.4552）A351-CH20SCS17G-X15CrNi2512A351-CK20SCS18G-X15CrNi2520不 锈 钢A351-CN7M CN7M （20号合金）SCS23A494-M-35-1NCuCA494-CY40NCrFC特殊合金A494-CW-12MW NMCrC注：*为国外材料，目前国内多数直接采用，它与（）内的材料可以互代。
山猫轮式滑移装载机大全
山猫轮式滑移装载机大全滑移装载机已逐渐成为管理者和操作员最信赖和认可的装载机，无论是大型作业还是小型作业，也无论是常规作业还是高难度作业，它都可以让工作变得更加方便，更加高效。
目前世界上生产滑移装载机的代表企业就是山猫，拥有50多年的滑移装载机生产史。
今天，就带大家来了解一下山猫滑移装载机的各种型号，包括S70、S450、S550、S570、S630、S650、S750、S770和S850。
S70S70额定工作载荷343kg，采用弧形举升方式，功率17.5kw。
S450S450滑移装载机作为S130机型的替代品，在S130机型成功的基础上，融合了小型滑移装载机自身特有的优势以及新一代大机型的各项改善。
更小的转弯半径、更加灵活的操控，适合更加狭小的空间。
S510S510额定工作载荷810kg，同样也是采用弧形举升方式，发动机功率36.5kw。
S530S510额定工作载荷869kg，采用的是垂直举升方式，发动机功率也是36.5kw。
S550S550是S160的升级替代型号，该车在中国国内配置了双速行驶的选项，非工作状态行驶可以达到17.3千米每小时的速度。
S570S570是S185的升级替代型号，该车型在中国国内配置了双速行驶的选项，并且具有高液压流量选项，以适应更多工作附件的液压性能需求。
S630S630为山猫径向举升滑移装载机，额定工作载荷1040kg，额定功率55.2千瓦。
有超过50种山猫附件可供S630使用。
S650额定工作载荷1282kg，额定功率55.2千瓦。
这款机型是回填和装载作业的良好选择。
S750垂直提举的S750拥有3.3米的提举高度，是装载应用的理想选择。
S770S770是山猫M系列的典型代表，除了继承K系列的灵活与高操控性外，在整机舒适性、安全性、日常维护性等方面有显著提高。
整机超强的动力性能与精细的微动性能，足以担当更繁重与更精密的作业任务。
发动机横直设计、双通道散热系统、神秘的免维护链条箱似乎都在诠释山猫设计师的奇思妙想。
莱富康螺杆压缩机技术特性
SRC-S型压缩机附录(SA-90-00-CH)90.附录 2 90.1新的SRC-S-255/305压缩机技术特性2 90.1.1简介 2 90.1.2技术特性 2 90.1.3尺寸特性 4 90.1.4附件/零部件 5 90.1.5技术参数 6 90.1.6电气参数 7 90.1.7应用范围 8 90.1.8外形尺寸和接线图 1290. 附录90.1新型 SRC-S-255/305压缩机的技术特性90.1.1 介绍SRC-S 系列中推出了新的型号： 255 和305 取代 了253 和 303。
其技术参数和外形尺寸均有改变。
另外，由于其主要部件和零件组件及代码都有所不同，对此请予以注意。
90.1.2 技术特性与SRC-S-253/303相比，新的SRC-S-255/305 采用本公司最新的SRC-134-S 型压缩机的设计布局，下面对其特性进行详细介绍。
自上而下的压缩过程：能量调节滑阀布置在螺杆的下部。
图 1: 自上而下的压缩过程部分负荷时的控制还是采用三个电磁阀，与原来不同的是只须将电磁阀下面的垫片更换后即可完成制冷量从有级调节到无级调节的转换（见图2）。
因此，就不需要拆装并在14和15号电磁阀下加装扼流螺丝，更无需更换外部的毛细管。
不过，在进行此类转换时，还是需要专用组件（见90.1.4章节）。
Label11416图 2: 全新的制冷量控制装置全新的润滑油进/出接口，在压缩机的机体上直接配有这两个接口，在采用外置油冷却时不需要特殊的组件，见图3，只要将进出口之间的螺栓A 用螺栓B 来替换即可。
螺栓B 在接线盒里可以找到，另外，油进出口的管径没有改变，还是16mm 。
B : T.E.I.F. M14x35螺栓采用外部油冷却器时用，与压缩机一起提供但未安装。
进油口16mm回油口16mmA : T.C.E.I.. M14x16螺栓不用外部油冷却器时安装，供货时已经安装。
图 3:当采用外部油冷却装置时用螺栓B 替换螺栓A机器配有两个油位视镜用于观察油位。
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CES CE CES GE
I GES G-E Leakage Current V GE = V GES, V CE = 0V ----± 100nA
On Characteristics
V GE(th)G-E Threshold Voltage I C = 20mA, V CE = V GE 5.0 6.08.5V
V CE(sat)Collector to Emitter
Saturation Voltage
I C = 20A, V GE = 15V-- 2.2 2.8V
I C = 32A, V GE = 15V-- 2.5--V
Dynamic Characteristics
C ies Input Capacitance
V CE = 30V, V GE = 0V,
f = 1MHz --1323--pF
C oes Output Capacitance--254--pF C res Reverse Transfer Capacitance--47--pF
Switching Characteristics
t d(on)Turn-On Delay Time
V CC = 300 V, I C = 20A,
R G = 10Ω, V GE = 15V,
Inductive Load, T C = 25°C --30--ns
t r Rise Time--49--ns t d(off)Turn-Off Delay Time--4870ns t f Fall Time--152200ns E on Turn-On Switching Loss--524--uJ E off Turn-Off Switching Loss--473--uJ E ts Total
Switching
Loss--9971400uJ
t d(on)Turn-On Delay Time
V CC = 300 V, I C = 20A,
R G = 10Ω, V GE = 15V,
Inductive Load, T C = 125°C --30--ns
t r Rise Time--51--ns t d(off)Turn-Off Delay Time--5275ns t f Fall Time--311400ns E on Turn-On Switching Loss--568--uJ E off Turn-Off Switching Loss--1031--uJ E ts Total
Switching
Loss--15992240uJ
T sc Short Circuit Withstand Time V CC = 300 V, V GE = 15V
@ T C = 100°C
10----us
Q g Total Gate Charge
V CE = 300 V, I C = 20A,
V GE = 15V --5580nC
Q ge Gate-Emitter Charge--1015nC Q gc Gate-Collector Charge--2540nC L e Internal Emitter Inductance Measured 5mm from PKG--14--nH
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Advance Information
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This datasheet contains preliminary data, and
supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
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