NITRIDE LIGHT-EMITTING DIODE ELEMENT AND METHOD OF
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专利名称：NITRIDE LIGHT-EMITTING DIODE ELEMENT
AND METHOD OF MANUFACTURING SAME
发明人：Yuki HARUTA,Tadahiro Katsumoto,Kenji
Shimoyama
申请号：US14054079
申请日：20131015
公开号：US20140103391A1
公开日：
20140417
专利内容由知识产权出版社提供
专利附图：
摘要：A nitride LED having improved light extraction efficiency and/or axial luminous intensity is provided. The nitride LED contains a nitride semiconductor substrate having,
on a front face thereof, a light-emitting structure made of a nitride semiconductor, wherein a roughened region is provided on a back face of the substrate, the roughened region has a plurality of protrusions, each of the plurality of protrusions has a top point or top plane and has a horizontal cross-section which is circular, except in areas where the protrusion is tangent to other neighboring protrusions, and which has a surface area that decreases on approaching the top point or top plane, the plurality of protrusions are arranged such that any one protrusion is in contact with six other protrusions, and light generated in the light-emitting structure is output to the exterior through the roughened region.
申请人：MITSUBISHI CHEMICAL CORPORATION
地址：Chiyoda-ku JP
国籍：JP
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