M1MA142KT1资料

0.68 CD, DIODE CAPACITANCE (pF)
0.64
0.6
0.56
0.52
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
OUTPUT PULSE
trr t
A
DEVICE MARKING — EXAMPLE
Marking Symbol
Type No. Symbol 141K MH 142K MI
MHX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
1
元器件交易网 M1MA141KT1 M1MA142KT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE
tr tp IF t RL 10% Irr = 0.1 IR 90% VR tp = 2 µs tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100 Ω
元器件交易网
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by M1MA141KT1/D
Single Silicon Switching Diode
This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications. • Fast trr, < 3.0 ns • Low CD, < 2.0 pF • Available in 8 mm Tape and Reel Use M1MA141/2KT1 to order the 7 inch/3000 unit reel. Use M1MA141/2KT3 to order the 13 inch/10,000 unit reel.
M1MA141KT1 M1MA142KT1
Motorola Preferred Devices
CATHODE 3
SC–70/SOT–323 PACKAGE SINGLE SILICON SWITCHING DIODE 40/80 V–100 mA SURFACE MOUNT
3
ANODE NO CONNECTION 1 2
元器件交易网
M1MA141KT1 M1MA142KT1
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
100 IF, FORWARD CURRENT (mA) IR , REVERSE CURRENT (µA)
10 TA = 150°C TA = 85°C 1.0 TA = 125°C
10 TA = – 40°C
0.1
TA = 85°C
1.0
TA = 25°C
TA = 55°C 0.01 TA = 25°C
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 – 55 ~ + 150 Unit mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol IR
Condition VR = 35 V VR = 75 V
Min — — — 40 80
Max 0.1 0.1 1.2 — — 2.0 3.0
Unit µAdc
VF VR
IF = 100 mA IR = 100 µA
Vdc Vdc
CD trr(2)
VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR
— —
pF ns
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C.
0.025 0.65
0.075 1.9 0.035 0.9 0.028 0.7 inches mm
SC–70/SOT–323 POWER DISSIPATION
The power dissipation of the SC–70/SOT–323 is a function of the collector pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = TJ(max) – TA RθJA the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150°C – 25°C 833°C/W = 150 milliwatts
0.025 0.65
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
1 2
MAXIMUM RATINGS (TA = 25°C)
Rating Reverse Voltage M1MA141KT1 M1MA142KT1 Peak Reverse Voltage M1MA141KT1 M1MA142KT1 Forward Current Peak Forward Current Peak Forward Surge Current IF IFM IFSM(1) VRM Symbol VR Value 40 80 40 80 100 225 500 mAdc mAdc mAdc Vdc Unit Vdc CASE 419–02, STYLE 2 SC–70/SOT–323
Characteristic Reverse Voltage Leakage Current M1MA141KT1 M1MA142KT1 Forward Voltage Reverse Breakdown Voltage M1MA141KT1 M1MA142KT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit Thermal Clad is a trademark of the Bergquist Company
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
Figure 1. Forward Voltage
Figure 2. Reverse Current
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into
The 833°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using a board material such as Thermal Clad, a power dissipation of 300 milliwatts can be achieved using the same footprint.