DTS6400

V µA nA V mΩ
Gate Threshold Voltage Drain-Source On-state Resistance
Diode Forward Voltage Forward Tran conductance
VGS=4.5V,ID=3.0A
VSD gFS VGS=0V,IS=1.25A VGS=4.5V,ID=1A
May 2011
Doc ID 0065 Rev 1
森利威ＱＱ：２３５５３６８８７２罗薇ＭＰ：１３７６０３２５０７０
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DTS6400
Figure 1.Output Characteristics
Electrical characteristics (curves)
森利威ＱＱ：２３５５３６８８７２罗薇ＭＰ：１３７６０３２５０７０
Figure 6.Switching time waveform
May 2011
Doc ID 0065 Rev 1
森利威ＱＱ：２３５５３６８８７２罗薇ＭＰ：１３７６０３２５０７０
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DTS6400
Package Information SOT-23
Package mechanical data
森利威ＱＱ：２３５５３６８８７２罗薇ＭＰ：１３７６０３２５０７０
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Notes
(a). Surface Mounted on FR4 Board, t≦10sec (b). Pulse Test: Pulse Width≦300Us, Duty≦2% (c). Guaranteed by design, not subject to production testing.
May 2011
Doc ID 0065 Rev 1
森利威ＱＱ：２３５５３６８８７２罗薇ＭＰ：１３７６０３２５０７０
1/8
DTS6400
Electrical characteristics
森利威ＱＱ：２３５５３６８８７２罗薇ＭＰ：１３７６０３２５０７０
Electrical characteristics
T1 8.4+2.00 -0.00 P2 2.00±0.05
C 13.0+0.50 -0.20 D0 1.5+0.10 -0.00
d 1.5MIN. D1 1.0MIN.
D 20.2MIN. T 0.6+0.05 -0.40
W 8.0±0.30 A0 3.20±0.10
E1 1.75±0.10 B0 3.10±0.20
z
Dynamic (b)
1413 563 196 pF
Input capacitance Output capacitance Reverse transfer capacitance
z
Switching times
tD(ON) tr tD(OFF) tf VDD=15V, ID=1A, VGEN=10V RL=10ohm , RGEN=3ohm 10 14 39 26 ns
IDSS IGSS VGS(th) RDS(ON)(a)
Test Conditions
VGS=0V, IDS=250μA VDS=48V, VGS=0V
VGS=±20VDS=0V VDS=VGS,ID=250µA VGS=10V,ID=4.5A
Min.
Typ.
Max.
Unit
60 1 ±100 1.0 1.8 26 2.2 33
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter VDSS Drain-to-Source Voltage VGSS Gate-to-Source Voltage Continuous Drain Current@ TJ = 125℃ I D* VGS=10V IDM* Pulsed Drain Current (tp ≤10us) Diode Continuous Forward Current IS* P D* T J, TSTG Rth JA* Total Power Dissipation TA = 25℃ TA = 100℃
森利威ＱＱ：２３５５３６８８７２罗薇ＭＰ：１３７６０３２５０７０
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DTS6400
森利威ＱＱ：２３５５３６８８７２罗薇ＭＰ：１３７６０３２５０７０
Package
Carrier Tape & Reel Dimensions
SOT-23
Application
A 178.0±2.00
H 50 MIN P1 4.00±0.10
Pin Description
2 3 1
z z z
Lead Free and Green Devices Available (ROHS Compliant)
Applications
z Power Management in Notebook Computer, Portable Equipment and Battery Powered System.
(S) 6 5 4 3 2 1
IS/A 20 10
1
2 4 6 8 10 12 ID/A
0
0
0.6
0.8
1
1.2
1.4
1.6 VSD/V
Figure9. Gate charge VS. Gate-source Voltage
Figure10.Maximum Safe Operating Area
ID/A
Figure 2.Transfer Characteristics
ID/A VGS=3V 10 VGS=10,9,8,7,6,5,4V 8 6 VGS=2V 4 2
ID/A TJ=125℃ 25 20 -55℃ 15 10 5 25℃
0
1
2
3
4
5
6 VDS/V
0
1
1.2
1.8
2
2.5
3
VGS/V
Figure3.Capacitance variations
Figure4.On-Resistance Variation with Temperature
C/PF Ciss 1400 1100 880
RDS(on)/m Ω 1.8 1.6 1.4 1.2
VGS=4V ID=3A
660 440 Crss 220
Coss
1 0.6 0.2 -55 -25 0 25 50 125 Tj/℃
DTS6400
森利威ＱＱ：２３５５３６８８７２罗薇ＭＰ：１３７６０３２５０７０
N-Channel Enhancement Mode Field Effect Transistor
Features
z 60V/4.5A RDS (ON) =26mΩ (Type) @ VGS=10V RDS (ON) =36mΩ (Type) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged SOT-23-3L package
Figure7.Transconductance Current Variation With
Electrical characteristics (curves)
森利威ＱＱ：２３５５３６８８７２罗薇ＭＰ：１３７６０３２５０７０
Drain Figure8.Body Diode Forward Voltage Variation with Source Current
0
5
10
15
20
25
30 VGS/V
Figure5.Gate Threshold Variation with Temperatures
Figure6.Breakdown Voltage Variation with temperatures
Vth/V 1.15 1.1 1.05 1 0.95 0.9 0.85 ID=250uA
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森利威ＱＱ：２３５５３６８８７２罗薇ＭＰ：１３７６０３２５０７０
DTS6400
Figure 2.
Test circuit
Gate charge test circuit
Figure 1．Switching times test circuit for Resistive load
森利威ＱＱ：２３５５３６８８７２罗薇ＭＰ：１３７６０３２５０７０
Value 60 ±20 4.5 20 1.7 1.25 0.5 -55 to 150 100 260
Unit V V A A W W ℃ ℃/W ℃
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for TL Soldering Purposes, 1/8″from case for 10 seconds Note: *Surface Mounted on 1in*1in pad area, t ≤ 10 Sec.
Note: Dimension O and E1 do not include mold flash, protrusions or gate Burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. May 2011 Doc ID 0065 Rev 1
Parameter z States Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-body leakage current
TCASE = 25 °C unless otherwise specified
Symbol BVDSS
Figure 3．Test circuit for inductive load and diode recovery times
Figure 4. Unclamped Inductive load test circuit switching
Figure 5. Unclamped inductive waveform
VGS/V 18 15
VGS=10V ID=3.6A
50 10
RDS(ON)Limit 100mS 10mS
1
1S
12 9 6 3
0.03 0.1 0.1 VGS
0
5
10
15
20
25
30
nC
1
10
60
70
VDS/V
May 2011
Doc ID 0065 Rev 1
F 3.5±0.10 K0 1.5±0.10
SOT-23
P0 4.00±0.10
Devices per Unit
Package Type SOT-23 Unit Quantity Tape & Reel Quantity 3000
Vth/V 1.3 1.2 1.1 1 0.8 0.7 0.6 -55 -25 0 25 50
VDS=VGS ID=250uA
125
Tj/℃
-55
-25
0
25
50
125
Tj/℃
May 2011
Doc ID 0065 Rev 1
森利威ＱＱ：２３５５３６８８７２罗薇ＭＰ：１３７６０３２５０７０
3/8
DTS6400
36
0.84 5
42
1.3 V S
z
Gate charge
Qg Qgs Qg Ciss Coss Crss VDS=15V,VGS=0V f=1.0MHZ VDS=15V,ID=2A , VGS=10V 9.2 1.6 2.6 nC
Total gate charge Gate-source charge Input capacitance
SOT-23-3 SYMBOL MIN. A A1 A2 b c D E E1 e e1 L θ 0.30 0° 0.00 0.90 0.30 0.08 2.70 2.60 1.40 0.95 BSC 1.90 BSC 0.60 8 0.012 0 MILLIMETERS MAX. 1.45 0.15 1.30 0.50 0.22 3.10 3.00 1.80 0.000 0.035 0.012 0.003 0.106 0.102 0.055 0.037 BSC 0.075 BSC 0.024 8 MIN. INCHES MAX. 0.057 0.006 0.051 0.020 0.009 0.122 0.118 0.071