A PHOTOMASK STRUCTURE WITH AN ETCH STOP LAYER THAT
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专利名称：A PHOTOMASK STRUCTURE WITH AN ETCH STOP LAYER THAT ENABLES REPAIRS OF
DRTECTED DEFECTS THEREIN AND EXTREME
ULTRAVIOLET(EUV) PHOTOLITHOGRAPY
METHODS USING THE PHOTOMASK
STRUCTURE
发明人：Zhengqing John Qi,Jed H. Rankin
申请号：US15041476
申请日：20160211
公开号：US20170235217A1
公开日：
20170817
专利内容由知识产权出版社提供专利附图：
摘要：Disclosed are a repairable photomask structure and extreme ultraviolet (EUV) photolithography methods. The structure includes a multilayer stack, a protective layer above the stack and a light absorber layer above the protective layer. The stack includes alternating layers of high and low atomic number materials and a selected one of the high atomic number material layers is different from the others such that it functions as an etch stop layer. This configuration allows the photomask structure to be repaired
if/when defects are detected near exposed surfaces of the multilayer stack following light absorber layer patterning. For example, when a defect is detected near an exposed surface of the stack in a specific opening in the light absorber layer, the opening can be selectively extended down to the etch stop layer or all the openings can be extended down to the etch stop layer in order to remove that defect.
申请人：GLOBALFOUNDRIES INC.
地址：Grand Cayman KY
国籍：KY
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