KMM372V213CK中文资料

元器件交易网
DRAM MODULE
AC CHARACTERISTICS (0°C≤TA≤70°C, VCC=3.3V±0.3V. See notes 1,2.)
Test condition : Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V, Output loading CL=100pF Parameter RAS to W delay time CAS setup time(CAS-before-RAS refresh) CAS hold time(CAS-before-RAS refresh) RAS precharge to CAS hold time Access time from CAS precharge Fast page mode cycle time Fast page mode read-modify-write cycle time CAS precharge time(Fast page cycle) RAS pulse width (Fast page cycle) RAS hold time from CAS precharge W to RAS precharge time (C-B-R refresh) W to RAS hold time (C-B-R refresh) OE access time OE to data delay Output buffer turn off delay time from OE OE command hold time Present Detect Read Cycle PDE to Valid PD bit PDE to PD bit Inactive Symbol Min -5 Max Min 83 10 8 3 35 35 75 10 50 35 15 8 18 18 5 13 18 20 5 15 200K 40 80 10 60 40 15 8 71 10 8 3
-25 -5 2.4 -
ICC1* : Operating Current * (RAS, CAS, Address cycling @tRC=min) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3* : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min) ICC4* : Fast Page Mode Current * (RAS=VIL, CAS cycling : tPC=min) ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V) ICC6* : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) II(L) : Input Leakage Current (Any input 0≤VIN≤Vcc+0.3V, all other pins not under test=0 V) IO(L) : Output Leakage Current(Data Out is disabled, 0V≤VOUT≤Vcc) VOH : Output High Voltage Level (IOH = -2mA) VOL : Output Low Voltage Level (IOL = 2mA) * NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle, tPC.
元器件交易网
元器件交易网
元器件交易网
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN, VOUT VCC Tstg PD IOS
元器件交易网
DRAM MODULE
CAPACITANCE (TA = 25°C, Vcc=3.3V, f = 1MHz) Item Input capacitance[A0-A10, B0] Input capacitance[W0, W2, OE0, OE2] Input capacitance[RAS0, RAS2] Input capacitance[CAS0, CAS4] Input/Output capacitance[DQ0 - 71] Symbol CIN1 CIN2 CIN3 CIN4 CDQ1 Min
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Symbol VCC VSS VIH VIL
Min 3.0 0 2.0 -0.3*2
Typ 3.3 0 -
Max 3.6 0 VCC+0.3*1 0.8来自Unit V V V V
Max 990 900 100 990 900 810 720 30 990 900 25 5 0.4
Unit mA mA mA mA mA mA mA mA mA mA uA uA V V
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KMM372V213CK/CS
Max 20 20 45 20 20 Unit pF pF pF pF pF
AC CHARACTERISTICS (0°C≤TA≤70°C, VCC=3.3V±0.3V. See notes 1,2.)
Test condition : Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V, Output loading CL=100pF Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address CAS to output in Low-Z Output buffer turn-off delay Transition time(rise and fall) RAS precharge time RAS pulse width RAS hold time CAS hold time CAS pulse width RAS to CAS delay time RAS to column address delay time CAS to RAS precharge time Row address set-up time Row address hold time Column address set-up time Column address hold time Column address to RAS lead time Read command set-up time Read command hold referenced to CAS Read command hold referenced to RAS Write command hold time Write command pulse width Write command to RAS lead time Write command to CAS lead time Data set-up time Data hold time Refresh period (2K refresh) Write command set-up time CAS to W delay time Column address to W delay time CAS precharge to W delay time Symbol Min -5 Max Min 110 155 50 18 30 5 5 2 30 50 18 48 13 18 13 10 5 8 0 10 30 0 0 -2 10 10 18 13 -2 15 32 0 36 48 53 0 40 55 60 10K 32 20 10K 18 50 5 5 3 40 60 20 58 15 18 13 10 5 8 0 10 35 0 0 -2 10 10 20 15 -2 20 32 10K 40 25 10K 20 50 60 20 35 90 133 -6 Max ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ns ns ns ns 7 7 7 7 9,11 9,11 11 8 8,11 11 4,11 10,11 11 11 11 11 11 3,4 3,4,5,11 3,10,11 3,11 6,11 2 Unit Note
KMM372V213CK/CS
Rating -0.5 to +4.6 -0.5 to +4.6 -55 to +125 9 50 Unit V V °C W mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (Voltage referenced to V SS, TA = 0 to 70°C) Item Supply Voltage Ground Input High Voltage Input Low Voltage *1 : VCC+1.3V/15ns, Pulse width is measured at VCC. *2 : -1.3V/15ns, Pulse width is measured at VSS. DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted) Symbol ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 II(L) IO(L) VOH VOL Speed -5 -6 Don′t care -5 -6 -5 -6 Don′t care -5 -6 Don′t care Don′t care KMM372V213CK/CS Min