SPP70N10L中文资料

SIPMOS =Power-TransistorProduct Summary V DS 100V R DS(on)16m I D70AFeatureN-ChannelEnhancement mode Logic LevelOrdering Code Q67040-S4175Q67040-S4170Q67060-S7428Maximum Ratings ,at T j = 25 °C, unless otherwise specified ParameterSymbol Value Unit Continuous drain currentT C =25°C T C =100°CI D7050APulsed drain currentT C =25°CI D puls 280Avalanche energy, single pulseI D =70 A , V DD =25V, R GS =25E AS 700mJAvalanche energy, periodic limited by T jmax E AR 25Reverse diode d v /d tI S =70A, V DS =0V, d i /d t =200A/µsd v /d t 6kV/µs Gate source voltage V GS ±20V Power dissipationT C =25°CP tot 250W Operating and storage temperature T j , T stg-55... +175°C IEC climatic category; DIN IEC 68-155/175/56Thermal CharacteristicsParameter Symbol Values Unitmin.typ.max. CharacteristicsThermal resistance, junction - case R thJC --0.6K/W Thermal resistance, junction - ambient, leaded R thJA--62.5SMD version, device on PCB: @ min. footprint@ 6 cm2 cooling area 1)R thJA----6240Electrical Characteristics, at T j = 25 °C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max. Static CharacteristicsDrain-source breakdown voltageV GS=0V, I D=2mAV(BR)DSS100--V Gate threshold voltage, V GS = V DSI D = 2 mAV GS(th) 1.2 1.62Zero gate voltage drain current V DS=100V, V GS=0V, T j=25°CV DS=100V, V GS=0V, T j=150°C I DSS--0.1-1100µAGate-source leakage currentV GS=20V, V DS=0VI GSS-10100nA Drain-source on-state resistanceV GS=4.5V, I D=50AR DS(on)-1425m Drain-source on-state resistanceV GS=10V, I D=50AR DS(on)-10161Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.Electrical Characteristics, at T j = 25 °C, unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max. Dynamic CharacteristicsTransconductance g fs V DS 2*I D*R DS(on)max ,I D=50A3065-SInput capacitance C iss V GS=0V, V DS=25V,f=1MHz -36304540pFOutput capacitance C oss-640800 Reverse transfer capacitance C rss-345430Turn-on delay time t d(on)V DD=50V, V GS=4.5V,I D=70A, R G=1.3 -70105nsRise time t r-250375 Turn-off delay time t d(off)-250375Fall time t f-95145Gate Charge CharacteristicsGate to source charge Q gs V DD=80V, I D=70A-1015nC Gate to drain charge Q gd-3451Gate charge total Q g V DD=80V, I D=70A,V GS=0 to 10V-160240 Gate plateau voltage V(plateau)V DD=80V, I D=70A- 3.22-V Reverse DiodeInverse diode continuousforward currentI S T C=25°C--70AInverse diode direct current,pulsedI SM--280 Inverse diode forward voltage V SD V GS=0V, I F=140A- 1.2 1.8VReverse recovery time t rr V R=50V, I F=l S,d i F/d t=100A/µs -100150nsReverse recovery charge Q rr-600900nC1 Power dissipation P tot = f (T C)SPP70N10LPtot2 Drain currentI D = f (T C)parameter:V GS10 VSPP70N10LID3 Safe operating areaI D = f ( V DS )parameter : D = 0 , T= 25 °C3ID4 Transient thermal impedanceZ thJC = f (t p)parameter : D = t/T5 Typ. output characteristicI D = f (V DS); T j=25°C parameter: t p = 80 µsID6 Typ. drain-source on resistanceR DS(on) = f (I D)parameter: V GS7 Typ. transfer characteristicsI D= f ( V GS ); V DS 2 x I D x R DS(on)maxparameter: t p = 80 µsID8 Typ. forward transconductanceg fs = f(I D); T j=25°Cparameter: g fsgfs9 Drain-source on-state resistance R DS(on) = f (T j )parameter : I D = 50 A, V GS = 4.5 Vm110SPP70N10LR D S (o n )10 Gate threshold voltage V GS(th) = f (T j )parameter:V GS = V DS , I D = 2 mAV G S (t h )11 Typ. capacitances C = f (V DS )parameter: V GS =0V, f =1 MHzC12 Forward character. of reverse diode I F = f (V SD )parameter: T, t p = 80 µsI F13 Typ. avalanche energyE AS = f (T j)par.: I D = 70 A , V DD = 25 V, R GS = 25mJ700EAS14 Typ. gate chargeV GS= f (Q Gate)parameter: I D= 70 A pulsedVGS15 Drain-source breakdown voltageV(BR)DSS= f (T j)SPP70N10LV(BR)DSSPublished byInfineon Technologies AG,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 1999All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). WarningsDue to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the expresswritten approval of Infineon Technologies, if a failure of such components can reasonably be expected tocause the failure of that life-support device or system, or to affect the safety or effectiveness of that deviceor system Life support devices or systems are intended to be implanted in the human body, or to supportand/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the healthof the user or other persons may be endangered.Further informationPlease notice that the part number is BSPP70N10L, BSPB70N10L and BSPI70N10L, forsimplicity the device is referred to by the term SPP70N10L, SPB70N10L and SPI70N10Lthroughout this documentation。