IRF540中文数据手册解读

IRF540_03中文资料

1/8February 2003NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &IRF540N-CHANNEL 100V - 0.055 Ω - 22A TO-220LOW GATE CHARGE STripFET™ II POWER MOSFETs TYPICAL R DS (on) = 0.055Ωs EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGEsAPPLICATION ORIENTED CHARACTERIZATIONDESCRIPTIONThis MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.APPLICATIONSs HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROLTYPE V DSS R DS(on)I D IRF540100 V<0.077 Ω22 AOrdering InformationABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.1) I SD ≤22A, di/dt ≤300A/µs, V DD ≤ V (BR)DSS , Tj ≤ T JMAX (2) Starting T j = 25 o C, I D = 12A, V DD = 30VSALES TYPEMARKINGPACKAGEPACKAGINGIRF540IRF540&TO-220TUBESymbol ParameterValue Unit V DS Drain-source Voltage (V GS = 0)100V V DGR Drain-gate Voltage (R GS = 20 k Ω)100V V GS Gate- source Voltage± 20V I D Drain Current (continuous) at T C = 25°C 22A I D Drain Current (continuous) at T C = 100°C 15A I DM (•)Drain Current (pulsed)88A P tot Total Dissipation at T C = 25°C 85W Derating Factor0.57W/°C dv/dt (1)Peak Diode Recovery voltage slope 9V/ns E AS (2)Single Pulse Avalanche Energy 220mJ T stg Storage Temperature-55 to 175°CT jMax. Operating Junction TemperatureIRF5402/8THERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)OFFON (1)DYNAMICRthj-case Rthj-ambT lThermal Resistance Junction-case Thermal Resistance Junction-ambientMaximum Lead Temperature For Soldering PurposeMax Max Typ1.7662.5300°C/W °C/W °CSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 0100V I DSSZero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating T C = 125°C 110µA µA I GSSGate-body Leakage Current (V DS = 0)V GS = ± 20V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 µA 234V R DS(on)Static Drain-source On ResistanceV GS = 10 VI D = 11 A0.0550.077ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (*)Forward Transconductance V DS =25 VI D =11 A20S C iss C oss C rssInput Capacitance Output Capacitance Reverse Transfer CapacitanceV DS = 25V, f = 1 MHz, V GS = 087012552pF pF pF3/8IRF540SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODEPulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(•)Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise TimeV DD = 50 VI D = 12 A R G =4.7 Ω V GS = 10 V (Resistive Load, Figure 3)6045ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 80 V I D = 22 A V GS = 10V3061041nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(off)t fTurn-off Delay Time Fall TimeV DD = 50 VI D = 12 A R G =4.7Ω, V GS = 10 V (Resistive Load, Figure 3)5020nsnsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (•)Source-drain CurrentSource-drain Current (pulsed)2288A A V SD (*)Forward On Voltage I SD = 22 AV GS = 01.3V t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 22 Adi/dt = 100A/µs V DD = 30 V T j = 150°C (see test circuit, Figure 5)1003757.5ns nC AELECTRICAL CHARACTERISTICS (continued)IRF540IRF540IRF5406/8Fig. 3: Switching Times Test Circuits For ResistiveFig. 5: Test Circuit For Inductive Load Switching7/8IRF540DIM.mm.inch.MIN.TYP. MAX.MIN.TYP. TYP .A 4.4 4.60.1730.181C 1.23 1.320.0480.051D 2.40 2.720.0940.107E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.40 2.700.0940.106H21010.400.3930.409L216.400.645L328.901.137L413140.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.20 6.600.2440.260L9 3.50 3.930.1370.154DIA3.753.850.1470.151TO-220 MECHANICAL DATAIRF540Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is registered trademark of STMicroelectronics® 2003 STMicroelectronics - All Rights ReservedAll other names are the property of their respective owners.STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.8/8。

IRF540 数据手册

1/8February 2003NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &IRF540N-CHANNEL 100V - 0.055 Ω - 22A TO-220LOW GATE CHARGE STripFET™ II POWER MOSFETs TYPICAL R DS (on) = 0.055Ωs EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGEsAPPLICATION ORIENTED CHARACTERIZATIONDESCRIPTIONThis MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.APPLICATIONSs HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROLTYPE V DSS R DS(on)I D IRF540100 V<0.077 Ω22 AOrdering InformationABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.1) I SD ≤22A, di/dt ≤300A/µs, V DD ≤ V (BR)DSS , Tj ≤ T JMAX (2) Starting T j = 25 o C, I D = 12A, V DD = 30VSALES TYPEMARKINGPACKAGEPACKAGINGIRF540IRF540&TO-220TUBESymbol ParameterValue Unit V DS Drain-source Voltage (V GS = 0)100V V DGR Drain-gate Voltage (R GS = 20 k Ω)100V V GS Gate- source Voltage± 20V I D Drain Current (continuous) at T C = 25°C 22A I D Drain Current (continuous) at T C = 100°C 15A I DM (•)Drain Current (pulsed)88A P tot Total Dissipation at T C = 25°C 85W Derating Factor0.57W/°C dv/dt (1)Peak Diode Recovery voltage slope 9V/ns E AS (2)Single Pulse Avalanche Energy 220mJ T stg Storage Temperature-55 to 175°CT jMax. Operating Junction TemperatureIRF5402/8THERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)OFFON (1)DYNAMICRthj-case Rthj-ambT lThermal Resistance Junction-case Thermal Resistance Junction-ambientMaximum Lead Temperature For Soldering PurposeMax Max Typ1.7662.5300°C/W °C/W °CSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 0100V I DSSZero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating T C = 125°C 110µA µA I GSSGate-body Leakage Current (V DS = 0)V GS = ± 20V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 µA 234V R DS(on)Static Drain-source On ResistanceV GS = 10 VI D = 11 A0.0550.077ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (*)Forward Transconductance V DS =25 VI D =11 A20S C iss C oss C rssInput Capacitance Output Capacitance Reverse Transfer CapacitanceV DS = 25V, f = 1 MHz, V GS = 087012552pF pF pF3/8IRF540SWITCHING ONSWITCHING OFFSOURCE DRAIN DIODEPulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(•)Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise TimeV DD = 50 VI D = 12 A R G =4.7 Ω V GS = 10 V (Resistive Load, Figure 3)6045ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 80 V I D = 22 A V GS = 10V3061041nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(off)t fTurn-off Delay Time Fall TimeV DD = 50 VI D = 12 A R G =4.7Ω, V GS = 10 V (Resistive Load, Figure 3)5020nsnsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (•)Source-drain CurrentSource-drain Current (pulsed)2288A A V SD (*)Forward On Voltage I SD = 22 AV GS = 01.3V t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 22 Adi/dt = 100A/µs V DD = 30 V T j = 150°C (see test circuit, Figure 5)1003757.5ns nC AELECTRICAL CHARACTERISTICS (continued)IRF540IRF540IRF5406/8Fig. 3: Switching Times Test Circuits For ResistiveFig. 5: Test Circuit For Inductive Load Switching7/8IRF540DIM.mm.inch.MIN.TYP. MAX.MIN.TYP. TYP .A 4.4 4.60.1730.181C 1.23 1.320.0480.051D 2.40 2.720.0940.107E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.40 2.700.0940.106H21010.400.3930.409L216.400.645L328.901.137L413140.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.20 6.600.2440.260L9 3.50 3.930.1370.154DIA3.753.850.1470.151TO-220 MECHANICAL DATAIRF540Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is registered trademark of STMicroelectronics® 2003 STMicroelectronics - All Rights ReservedAll other names are the property of their respective owners.STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.8/8。

IRF540中文资料

IRF540 N沟道MOS管特性‘Thrench’工艺低的导通内阻快速开关低热敏电阻综述使用沟渠工艺封装的N通道增强型场效应功率晶体管应用：DC到DC转换器开关电源电视及电脑显示器电源IRF540中提供的是SOT78(TO220AB)常规铅的包裹。

IRF540S中提供的是SOT404(D PAK)表面安装的包裹。

管脚管脚描述1 Gate2 Drain3 SourceTab Drain极限值系统绝对最大值依照限制值符号参数条件最小值最大值单位 V_DSS 漏源极电压 Tj= 25 ˚C to 175˚C - 100 VV_DGR V_GS I_D I_DM P_D Tj，Tsig漏门极电压门源极电压连续漏电流脉冲漏电流总功耗操作点和存储温度Tj = 25 ˚C to 175˚C; RGS = 20 k Ω Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C- - -- -- -55100 ±20 23 16 92 100 175V V A A A W ℃雪崩能量极限值符号参数条件最小值最大值单位AS E AS I非重复性雪崩能量最大非重复性雪崩电流Unclamped inductive load, IAS = 10 A; tp = 350 µs; Tj prior to avalanche = 25˚C; VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer to fig:14- - 230 23mJ A热敏电阻符号参数条件最小值典型值最大值单位thj mb R - thj a R -安装底座交界处的热阻周围环境热阻SOT78封装，自由空间SOT404封装，PCB 上- - -- 60 501.5 - -K/W K/W K/W电特性25℃ 除非另有说明符号参数条件最小值典型值最大值单位 ()BR DSS V()GS TO V()DS ON R漏源极崩溃电压门阀电压漏源极导通电阻GS V =0V ；D I =0.25mATj = -55˚CDS V = ; ID = 1 mAGS V Tj = 175˚C Tj = -55˚CGS V = 10 V; ID = 17 ATj = 175˚C10089 21 - -- - 3 - - 49 132- - 4 - 6 77 193V V V V V m Ωm Ωfs g GSS I DSS I 向前跨导门源极泄漏电流 0门极电压漏电流DS V =25V; D I =17A GS V =±20 V;DS V =0VVDS = 100 V; VGS = 0 VVDS=80V;VGS=0V;Tj= 175˚C 8.7 - - - 15.5 10 0.05 - - 100 10 250 S nA uA uA ()g tot Q gs Q gd Q 总共门极电荷门源极电荷门漏极电荷 ID = 17 A VDD = 80 V; VGS = 10 V- - - - - - 65 10 29 nC nC nC d on Tr T doff Tf T 开启延迟时间开启上沿时间关闭延迟时间关闭下沿时间 DD V = 50 V; D R = 2.2 Ω; DD V = 10 V; G R = 5.6 ΩResistive load- - - -8 39 26 24 - - - -ns ns ns ns d L d Ls L内部漏电感内部漏电感内部源极电感Measured tab to centre of die Measured from drain lead to centre of die (SOT78 package only)Measured from source lead to source bond pad--- 3.5 4.5 7.5- - -nH nH nHiSS C oSS C rSS C输入电容输出电容反馈电容GS V = 0 V; S D V = 25 V; f = 1 MHz- - -890 139 831187 167 109pF pF pF反向二极管极限值及特性符号参数条件最小值典型值最大值单位S I SM IDS V连续源极电流脉冲源极电流二极管正向电压F I =28A ； GS V =0V- - - - - 0.94 23 92 1.5 A A V t rrrr Q反向恢复之间反向恢复命令F I =17A ；=0V;GS V -d F I /dt=100A/us;=25VR V - -61 200- -ns nC底座温度-自然功率降低百分比图1：自然功率损耗底座温度-漏电流降低百分比图2 ：自然持续漏电流漏源极电压-脉冲漏极电流峰值图3 ：安全操作区域脉宽-瞬态热阻抗图4：瞬态热阻抗漏源极电压-漏极电流图5：典型输出特性漏极电流-漏源极导通阻抗图6：典型导通阻抗图7：典型传递特性图8：典型跨导图9：漏源极导通阻抗图10：门阀电压图11：阈漏极电流图12：典型电容值图13：典型的反向二极管电流图14：最大允许非重复性雪崩电流(IAS)和雪崩的时间。

irf540nspbf中文资料

IRF540NSPbF IRF540NLPbFHEXFET ® Power MOSFET3/18/04 1Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D 2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRF540NL) is available for low-profile applications.lAdvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Ratingl 175°C Operating Temperature l Fast Switchingl Fully Avalanche Rated l Lead-Free DescriptionAbsolute Maximum RatingsParameterMax.UnitsI D @ T C= 25°C Continuous Drain Current, V GS @ 10V 33I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 23A I DMPulsed Drain Current 110P D @T C = 25°C Power Dissipation 130W Linear Derating Factor 0.87W/°C V GS Gate-to-Source Voltage ± 20V I AR Avalanche Current16A E AR Repetitive Avalanche Energy 13mJ dv/dt Peak Diode Recovery dv/dt 7.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds 300 (1.6mm from case )°CMounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m)D 2Pak IRF540NSPbF TO-262IRF540NLPbFParameterTyp.Max.UnitsR θJC Junction-to-Case––– 1.15R θJAJunction-to-Ambient (PCB mount)**–––40Thermal Resistance°C/WPD - 95130IRF540NS/LPbFSource-Drain Ratings and CharacteristicsRepetitive rating; pulse width limited bymax. junction temperature. (See fig. 11) Starting T J = 25°C, L =1.5mHR G = 25Ω, I AS = 16A. (See Figure 12)I SD ≤ 16A , di/d t ≤ 340A/µs, V DD ≤ V (BR)DSS , T J ≤ 175°CPulse width ≤ 400µs; duty cycle ≤ 2%.Notes:This is a typical value at device destruction and represents operation outside rated limits.This is a calculated value limited to T J = 175°C . Uses IRF540N data and test conditions.**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994Electrical Characteristics @ T J = 25°C (unless otherwise specified)IRF540NS/LPbF 3Fig 4. Normalized On-ResistanceVs. TemperatureIRF540NS/LPbFFig 8. Maximum Safe Operating AreaGate-to-Source VoltageDrain-to-Source Voltage Fig 7. Typical Source-Drain DiodeForward Voltage1101001000V DS , Drain-toSource Voltage (V)0.11101001000I D , D r a i n -t o -S o u r c e C u r r e n t (A )IRF540NS/LPbF 5Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseCase TemperatureV V d(on)rd(off)fV DDFig 10a. Switching Time Test CircuitFig 10b. Switching Time WaveformsIRF540NS/LPbF6VDSCurrent Sampling ResistorsV GSFig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive WaveformsI ASFig 12c. Maximum Avalanche EnergyVs. Drain CurrentV DDIRF540NS/LPbF 7Peak Diode Recovery dv/dt Test CircuitV DD* Reverse Polarity of D.U.T for P-ChannelV GS*** V GS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET ® power MOSFETsTO-262 Package OutlineIRF540NS/LPbFData and specifications subject to change without notice.This product has been designed and qualified for the industrial market.Qualification Standards can be found on IR’s Web site.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .03/04344TRRFEED DIRECTION1.85 (.073)1.65 (.065)1.60 (.063)1.50 (.059)4.10 (.161)3.90 (.153)TRLFEED DIRECTION 10.90 (.429)10.70 (.421)16.10 (.634)15.90 (.626)1.75 (.069)1.25 (.049)11.60 (.457)11.40 (.449)15.42 (.609)15.22 (.601)4.72 (.136)4.52 (.178)24.30 (.957)23.90 (.941)0.368 (.0145)0.342 (.0135)1.60 (.063)1.50 (.059)13.50 (.532)12.80 (.504)330.00(14.173) MAX.27.40 (1.079)23.90 (.941)60.00 (2.362) MIN.30.40 (1.197) MAX.26.40 (1.039)24.40 (.961)NOTES :1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSION MEASURED @ HUB.4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.D 2Pak Tape & Reel InfomationDimensions are shown in millimeters (inches)/package/。

IRF540驱动电磁阀电路分析

IRF540 MOS管应用VDSS=100V RDS<0.077 ID=22AVGS(th)=4VVGS=10. RDS接近0.007 ID=11A负载电流小的情况下可以5V驱动IRF540，IN4007 MOS管内部等效，100/10W（可用2W）功率电阻，电磁阀驱动电路原理图ABS压力调节器的4个常开进油电磁阀的最大起动电流约为3.6 A;4个常闭出油电磁阀最大起动电流约为2.4 A。

而L9349的工作电压4.5～32 V，两路通道内阻0.2Ω，最大负载电流3A；另两路内阻0.3Ω，最大负载电流5A，恰好能满足ABS常开和常闭电磁阀的驱动电流要求，而且较低的导通内阻又能保证低功耗，因此L9349非常适合进行ABS电磁阀的驱动控制。

电磁阀驱动电路原理图见图。

电磁阀驱动电路原理图在图中，每片L9349能驱动4个电磁阀工作，属于典型的低端驱动。

通过Vs端口给芯片提供12V供电电压；当给输入端IN1～IN4 PWM控制信号，就能方便地控制输出端以驱动4路电磁阀工作，OUT1和OUT2端口的最大驱动能力为5A，应该连接ABS的常闭电磁阀；OUT3和OUT4端口最大驱动能力为3A，应连接ABS常开电磁阀，不可接反；EN 端口为使能端，能通过MCU快速关闭芯片；L9349的数字地和模拟地分开，提高了驱动模块的抗干扰能力。

24V电磁阀驱动电路8推荐说明：驱动24V直流电磁阀的驱动电路：，此电路已经在实际应用中，稳定，可靠。

此电路虽然在现场已经稳定运行很久，但有不合理的地方，不知道大家有没有发现。

---2007-07-24此电路驱动24V的电磁阀，电流只能在2A左右，不能太大，因为 Vgs 只有5V，IRF540没有达到完全的导通状态，如果要增大电流得重新设计驱动电路，使Vgs在10V左右才能充分发挥IRF540的驱动能力。

这么久了都没人提出这问题，还是出来补充下，以免大家误解 ---2007-09-07欢迎大家交流探讨！-------------------------------- 最新更新 2008.04.16 -----------------------------------重新设计了驱动电路，已经在实际电路可靠工作，供参考！（如果浏览器不能看到全图，请把图片保存到你的电脑即可）posted @ 2007-1-18 9:24:00 AVR猎手阅读全文(8305) | 回复(35) |反映问题 | 引用通告(0) | 编辑∙标签：单片机电磁阀驱动电路∙上一篇：24V继电器的驱动电路∙下一篇：★卷布机（布料、薄膜等）光电对边控制器纠偏控制器（纠偏器_对边器）★2007-7-30 15:12:00Re:24V电磁阀驱动电路图不全，后面的看不清楚，大哥能不能把全图给小妹看看啊！谢谢！！！！！以下为blog主人的回复：点右键，图片另存为，放到你的电脑上就看清楚，看不清楚后面的是因为你电脑的尺寸的问题。

IRF540中文资料

IRF540 N 沟道 MOS 管
特性
‘Thrench’工艺低的导通内阻快速开关低热敏电阻
综述
使用沟渠工艺封装的 N 通道增强型场效应功率晶体管应用： DC 到 DC 转换器开关电源电视及电脑显示器电源 IRF540 中提供的是 SOT78(TO220AB)常规铅的包裹。 IRF540S中提供的是SOT404(D PAK)表面安装的包裹。
热敏电阻
符号参数
安装底座交界处的热阻周围环境热阻
条件
最小值 -
典型值 60 50
最大值 1.5 -
单位 K/W K/W K/W
Rthj mb Rthj a
SOT78 封装，自由空间 SOT404 封装，PCB 上
-
电特性
25℃ 除非另有说明符号参数漏源极崩溃电压条件最小值 100 Tj = -55˚C 门阀电压 89 2 Tj = 175˚C Tj = -55˚C 漏源极导通电阻 1 Tj = 175˚C 典型值 3 49 132 最大值 4 6 77 193 单位 V V V V V mΩ mΩ
-
Ls
内部源极电感
Measured from source lead to source bond pad
-
7.5
-
nH
CiSS CoSS CrSS
输入电容输出电容反馈电容
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
890 139 83
1187 167 109
pF pF pF
反向二极管极限值及特性
符号
参数连续源极电流脉冲源极电流二极管正向电压反向恢复之间反向恢复命令

IRF540中文数据手册知识讲解

I R F540中文数据手册
IRF540 N沟道MOS管
特性
‘Thrench’工艺
低的导通内阻
快速开关
低热敏电阻
综述
使用沟渠工艺封装的N通道增强型场效应功率晶体管应用：
DC到DC转换器
开关电源
电视及电脑显示器电源
IRF540中提供的是SOT78(TO220AB)常规铅的包裹。

IRF540S中提供的是SOT404(D PAK)表面安装的包裹。

管脚
管脚描述
1 Gate
2 Drain
3 Source
Tab Drain
极限值
雪崩能量极限值
热敏电阻
电特性
25℃除非另有说明
反向二极管极限值及特性
底座温度-自然功率降低百分比
图1：自然功率损耗
底座温度-漏电流降低百分比
图2 ：自然持续漏电流
漏源极电压-脉冲漏极电流峰值
图3 ：安全操作区域
脉宽-瞬态热阻抗
图4：瞬态热阻抗
漏源极电压-漏极电流
图5：典型输出特性
漏极电流-漏源极导通阻抗
图6：典型导通阻抗
图7：典型传递特性
图8：典型跨导
图9：漏源极导通阻抗
图10：门阀电压
图11：阈漏极电流
图12：典型电容值
图13：典型的反向二极管电流
图14：最大允许非重复性雪崩电流(IAS)和雪崩的时间。

IRF540中文资料_数据手册_参数

Ciss
1500
1000 500 0 1
Coss
Crss
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

PD - 94812
IRF540NPbF
HEXFET® Power MOSFET
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
1A)
TJ = 25°C 100

MOSFETIRF540 资料

MOSFET IRF540 N沟道MOS管特性
‘Thrench’工艺
低的导通内阻
快速开关
低热敏电阻
综述
使用沟渠工艺封装的N通道增强型场效应功率晶体管
应用：
DC到DC转换器
开关电源
电视及电脑显示器电源
IRF540中提供的是SOT78(TO220AB)常规铅的包裹。

IRF540S中提供的是SOT404(D PAK)表面安装的包裹。

管脚
极限值
雪崩能量极限值
热敏电阻
电特性
反向二极管极限值及特性
底座温度-自然功率降低百分比
图1：自然功率损耗
底座温度-漏电流降低百分比
图2 ：自然持续漏电流
漏源极电压-脉冲漏极电流峰值
图3 ：安全操作区域
脉宽-瞬态热阻抗
图4：瞬态热阻抗
漏源极电压-漏极电流
图5：典型输出特性
漏极电流-漏源极导通阻抗
图6：典型导通阻抗
图7：典型传递特性
图8：典型跨导
图9：漏源极导通阻抗
图10：门阀电压
图11：阈漏极电流
图12：典型电容值
图13：典型的反向二极管电流
图14：最大允许非重复性雪崩电流(IAS)和雪崩的时间。

irf0中文数据手册要点

IRF540 N 沟道MOS 管
特性
‘Thrench ’工艺低的导通内阻快速开关低热敏电阻
综述
使用沟渠工艺封装的N 通道增强型场效应功率晶体管应用：
DC 到DC 转换器开关电源
电视及电脑显示器电源
IRF540中提供的是SOT78(TO220AB)常规铅的包裹。

IRF540S 中提供的是SOT404(D PAK)表面安装的包裹。

管脚
极限值
雪崩能量极限值
热敏电阻
电特性
反向二极管极限值及特性
底座温度-自然功率降低百分比
图1：自然功率损耗底座温度-漏电流降低百分比
图2 ：自然持续漏电流漏源极电压-脉冲漏极电流峰值
图3 ：安全操作区域
脉宽-瞬态热阻抗
图4：瞬态热阻抗
漏源极电压-漏极电流
图5：典型输出特性
漏极电流-漏源极导通阻抗
图6：典型导通阻抗
图7：典型传递特性
图8：典型跨导
图9：漏源极导通阻抗
图10：门阀电压
图11：阈漏极电流
图12：典型电容值
图13：典型的反向二极管电流
图14：最大允许非重复性雪崩电流(IAS)和雪崩的时间。

IRF540中文数据手册

IRF540 N沟道MOS管特性
‘Thrench’工艺
低的导通内阻
快速开关
低热敏电阻
综述
使用沟渠工艺封装的N通道增强型场效应功率晶体管应用：
DC到DC转换器
开关电源
电视及电脑显示器电源
IRF540中提供的是SOT78(TO220AB)常规铅的包裹。

IRF540S中提供的是SOT404(D PAK)表面安装的包裹。

管脚
极限值
雪崩能量极限值
热敏电阻
电特性
反向二极管极限值及特性
底座温度-自然功率降低百分比
图1：自然功率损耗
底座温度-漏电流降低百分比
图2 ：自然持续漏电流
漏源极电压-脉冲漏极电流峰值
图3 ：安全操作区域
脉宽-瞬态热阻抗
图4：瞬态热阻抗
漏源极电压-漏极电流
图5：典型输出特性
漏极电流-漏源极导通阻抗
图6：典型导通阻抗
图7：典型传递特性
图8：典型跨导
图9：漏源极导通阻抗
图10：门阀电压
图11：阈漏极电流
图12：典型电容值
图13：典型的反向二极管电流
图14：最大允许非重复性雪崩电流(IAS)和雪崩的时间。

irf540场效应管参数

irf540场效应管参数IRF540场效应管参数一、IRF540场效应管简介IRF540是一种N沟道MOSFET，是国际上常用的高功率场效应管之一。

它具有低开启电压、高控制灵敏度和大电流能力等特点，广泛应用于各种开关电源、逆变器、电机驱动器等高频高压开关电路中。

二、IRF540场效应管参数1. 最大耗散功率（Pd）：150W最大耗散功率是指场效应管在正常工作状态下能够承受的最大功率。

超过这个值会导致场效应管过热甚至烧毁。

2. 最大漏极-源极电压（Vds）：100V最大漏极-源极电压是指场效应管在正常工作状态下能够承受的最大电压。

超过这个值会导致场效应管击穿损坏。

3. 最大漏极电流（Id）：33A最大漏极电流是指场效应管在正常工作状态下能够承受的最大电流。

超过这个值会导致场效应管过载损坏。

4. 静态漏极-源极电阻（Rds(on)）：0.077Ω静态漏极-源极电阻是指场效应管在正常工作状态下漏极-源极间的电阻值。

该值越小，表示场效应管的导通能力越强。

5. 门极-源极开启电压（Vgs(th)）：4V ~ 5V门极-源极开启电压是指场效应管开始导通的门极-源极电压。

该值越小，表示场效应管的控制灵敏度越高。

6. 门极最大电压（Vgs(max)）：20V门极最大电压是指场效应管能够承受的最大门极-源极电压。

超过这个值会导致场效应管损坏。

三、IRF540场效应管特性曲线IRF540场效应管特性曲线反映了其在不同工作条件下的漏电流与漏极-源极电压之间的关系。

通过分析特性曲线可以得到IRF540的一些重要参数，如开启电压、截止电流等。

四、IRF540场效应管使用注意事项1. 在使用前必须仔细阅读数据手册，并按照手册规定进行正确连接和使用。

2. 需要注意场效应管的静态电压和电流，避免超过最大值。

3. 在使用场效应管时需要注意散热，以免过热损坏。

4. 在选择场效应管时需要根据实际需求选择合适的型号和参数，以免出现过载或不足的情况。

irf540参数 (2)

irf540参数1. 引言IRF540是一种常见的功率MOSFET（金属氧化物半导体场效应晶体管），被广泛用于高功率应用中，如电源电路、开关电源和马达控制等。

本文将介绍IRF540的参数和特性。

2. 参数IRF540的主要参数如下：2.1 静态参数•额定电压（VDS）：100V•最大漏极电流（ID）：33A•最大漏源极间电阻（RDS(on)）：0.077Ω•栅极漏源电压（VGS(th)）：2V至4V•静态导通电阻（RDS(on)）：0.11Ω2.2 动态参数•输入电容（Ciss）：1700pF•输出电容（Coss）：500pF•反向传输电容（Crss）：45pF•开关时间（tON和tOFF）：50ns至100ns•最大漏源极间电感（LDS）：17nH3. 特性IRF540具有以下特点：•高压功率：IRF540的额定电压为100V，使其可以在高电压应用中使用，如电源和开关电源。

•高电流：IRF540的最大漏极电流为33A，使其适用于需要大电流传输的应用，如马达控制。

•低导通电阻：IRF540的静态导通电阻（RDS(on)）为0.11Ω，可以减小功率损耗和热量产生。

•快速开关速度：IRF540的开关时间为50ns至100ns，适用于高速开关应用，可以减小功耗和提高效率。

•稳定性良好：IRF540具有稳定的电性能和温度性能，可以在各种环境条件下稳定工作。

4. 应用IRF540广泛应用于以下领域：•电源电路：IRF540的高电压和高电流特性使其成为电源电路中的理想选择，如开关电源和逆变器。

•马达控制：IRF540的高电流和稳定性使其适用于马达控制应用，如步进电机和直流电机驱动。

•汽车电子：IRF540在汽车电子中也有一定的应用，如电动汽车的控制和驱动系统。

5. 结论IRF540是一种功能强大的功率MOSFET，具有高电压、高电流、低导通电阻和快速开关速度等优点。

它在电源电路、马达控制和汽车电子等领域有广泛的应用。

irf540参数

IRF540参数简介IRF540是一种高功率N沟道MOSFET（金属氧化物半导体场效应晶体管）。

它具有低开启电阻和高电流能力，适用于各种高电压和高功率应用，如电源开关、电机驱动器和电子开关等。

参数概述IRF540的参数可以分为静态参数和动态参数两部分：静态参数静态参数是指在稳态工作条件下的性能指标，包括： - 额定电压：VDS（Drain-Source Voltage）表示MOSFET的最大允许电压，通常为100V。

- 额定电流：ID （Drain Current）表示经过MOSFET的最大允许电流，它受到功率和散热的限制，通常为28A。

- 导通电阻：RDS(ON)（Drain-Source On-Resistance）表示MOSFET在导通状态下的电阻，一般为0.077Ω。

- 阈值电压：VGS(TH)（Gate-Source Threshold Voltage）表示MOSFET的门极阈值电压，它决定了其导通状态，通常为2-4V。

- 级间电容：Ciss（Input Capacitance）表示MOSFET的输入电容，一般为1100pF。

- 级间电容：Crss（Reverse Transfer Capacitance）表示MOSFET的反向传输电容，一般为5pF。

- 输出电容：Coss（Output Capacitance）表示MOSFET的输出电容，一般为400pF。

动态参数动态参数是指在快速开关过程中的性能指标，包括： - 上升时间：tr（Turn-On Time）表示MOSFET从导通到截止的时间，当输入信号施加到开关管时，tr是S型曲线上的一点。

- 下降时间：tf（Turn-Off Time）表示MOSFET从截止到导通的时间。

主要应用IRF540由于其高功率和高电流能力，在各个领域中得到了广泛的应用，包括但不限于以下几个方面：电源开关IRF540可以作为电源开关使用，用于调节和分配电源。

功率放大芯片IRF540NS资料

IRF540NSIRF540NLHEXFET ® Power MOSFET02/14/02 1Advanced HEXFET ®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D 2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRF540NL) is available for low-profile applications.lAdvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Ratingl 175°C Operating Temperature l Fast Switchingl Fully Avalanche Rated Description Absolute Maximum RatingsParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS@ 10V 33I D @ TC = 100°C Continuous Drain Current, V GS @ 10V 23A I DMPulsed Drain Current 110P D @T C = 25°C Power Dissipation 130WLinear Derating Factor 0.87W/°C V GS Gate-to-Source Voltage ± 20V I AR Avalanche Current16A E AR Repetitive Avalanche Energy 13mJ dv/dt Peak Diode Recovery dv/dt 7.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds 300 (1.6mm from case )°CMounting torque, 6-32 or M3 srew10 lbf •in (1.1N •m)D 2Pak IRF540NS TO-262IRF540NLParameterTyp.Max.UnitsR θJC Junction-to-Case––– 1.15R θJAJunction-to-Ambient (PCB mount)**–––40Thermal Resistance°C/WPD - 91342IRF540NS/IRF540NLSource-Drain Ratings and CharacteristicsRepetitive rating; pulse width limited bymax. junction temperature. (See fig. 11) Starting T J = 25°C, L =1.5mHR G = 25Ω, I AS = 16A. (See Figure 12)I SD ≤ 16A, di/dt ≤ 340A/µs, V DD ≤ V (BR)DSS , T J ≤ 175°CPulse width ≤ 400µs; duty cycle ≤ 2%.Notes:This is a typical value at device destruction and represents operation outside rated limits.This is a calculated value limited to T J = 175°C . Uses IRF540N data and test conditions.**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994Electrical Characteristics @ T J = 25°C (unless otherwise specified)IRF540NS/IRF540NL 3Fig 4. Normalized On-ResistanceVs. TemperatureIRF540NS/IRF540NLFig 8. Maximum Safe Operating AreaGate-to-Source VoltageFig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 7. Typical Source-Drain DiodeForward Voltage1101001000V DS , Drain-toSource Voltage (V)0.11101001000I D , D r a i n -t o -S o u r c e C u r r e n t (A )IRF540NS/IRF540NL 5Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseCase TemperatureV V d(on)rd(off)fV DDFig 10a. Switching Time Test CircuitFig 10b. Switching Time WaveformsIRF540NS/IRF540NL6VDSCurrent Sampling ResistorsV GSFig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive WaveformsI A SFig 12c. Maximum Avalanche EnergyVs. Drain CurrentV D DRIRF540NS/IRF540NL 7Peak Diode Recovery dv/dt Test CircuitV DD* Reverse Polarity of D.U.T for P-ChannelV GS*** V GS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET ® power MOSFETsIRF540NS/IRF540NLD 2Pak Package OutlineD 2Pak Part Marking Information10.16 (.400) RE F.6.47 (.255)6.18 (.243)2.61 (.103)2.32 (.091)8.89 (.350) RE F.- B -1.32 (.052)1.22 (.048)2.79 (.110)2.29 (.090)1.39 (.055)1.14 (.045)5.28 (.208)4.78 (.188)4.69 (.185)4.20 (.165)10.54 (.415)10.29 (.405)- A -21 315.49 (.610)14.73 (.580)3X0.93 (.037)0.69 (.027)5.08 (.200)3X1.40 (.055)1.14 (.045)1.78 (.070)1.27 (.050)1.40 (.055) M AX.NO TE S:1 DIM ENS IONS A FTER SO LDE R DIP.2 DIM ENSIONING & TOLE RANCING P ER ANS I Y14.5M , 1982. 3 CONTROLLING DIM ENS ION : INCH.4 HE ATSINK & LEA D DIM E NSIONS DO NOT INCLUDE B URRS.0.55 (.022)0.46 (.018)0.25 (.010) M B A MMINIMUM RECOM ME NDE D F OOTP RINT11.43 (.450)8.89 (.350)17.78 (.700)3.81 (.150)2.08 (.082) 2XLE AD AS SIGNME NTS 1 - GATE 2 - DRA IN 3 - SOURCE2.54 (.100) 2XT N UM B ERIN TER NA RE CTIFIE R LO G O DATE C OD E (YYW W )YY = YEAR W W = W EE KA S SEM BLY LO T CO DEIRF540NS/IRF540NL 9TO-262 Package OutlineIRF540NS/IRF540NLData and specifications subject to change without notice.This product has been designed and qualified for the industrial market.Qualification Standards can be found on IR ’s Web site.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .02/02D 2Pak Tape & Reel Information344TR RFEED D IRE CTION1.85 (.073)1.65 (.065) 1.60 (.063)1.50 (.059)4.10(.161)3.90(.153)TR LFEE D D IREC TIO N 10.90(.429)10.70(.421)16.10(.634)15.90(.626)1.75 (.069)1.25 (.049)11.60(.457)11.40(.449)15.42 (.609)15.22 (.601)4.72 (.136)4.52 (.178)24.30 (.957)23.90 (.941)0.368 (.0145)0.342 (.0135)1.60 (.063)1.50 (.059)13.50 (.532)12.80 (.504)330.00(14.173) M A X.27.40 (1.079)23.90 (.941)60.00 (2.362) M IN.30.40 (1.197) M A X.26.40 (1.039)24.40 (.961)N O TE S :1. CO M F OR M S TO E IA -418.2. CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER.3. DIM E NS IO N M EA S UR E D @ H U B.4. IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.。

IRFI540N中文资料

IRFI540N IRFI540N IRFI540N IRFI540N IRFI540N IRFI540N IRFI540N
文档之家的所有文档均为用户上传分享文档之家仅负责分类整理如有任何问题可通过上方投诉通道反馈
IRFI540N中文资料
HEXFET ? Power MOSFET IRFI540N PD - 9 Technology
l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated
Absolute Maximum Ratings Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. PRELIMINARY

irf540场效应管参数

IRF540场效应管参数1. 引言在现代电子设备中，场效应管（FET）被广泛应用于功率放大器、开关、模拟电路等领域。

IRF540是一种常见的N沟道增强型MOSFET（金属-氧化物-半导体场效应晶体管），具有优异的性能和可靠性。

本文将对IRF540场效应管的参数进行详细探讨。

2. 参数介绍IRF540场效应管具有多个重要参数，下面将分别进行介绍。

2.1 阈值电压（Vth）阈值电压是指控制压（Gate）与源端（Source）之间的电压达到临界值时，场效应管开始导通的电压。

对于IRF540，其阈值电压通常在2V至4V之间。

2.2 最大漏极-源极电压（Vds_max）最大漏极-源极电压指的是场效应管所能承受的最大电压，超过该电压可能会导致损坏。

IRF540的最大漏极-源极电压一般为100V。

2.3 最大漏极电流（Id_max）最大漏极电流是指当控制压施加时，从漏极流出的最大电流。

IRF540的最大漏极电流一般为33A。

2.4 漏极-源极电阻（Rds_on）漏极-源极电阻是指在导通状态下，漏极-源极之间产生的电阻。

IRF540的漏极-源极电阻较低，通常在0.077Ω至0.095Ω之间。

3. 参数影响因素IRF540场效应管的参数受多个因素影响，下面将分别进行介绍。

3.1 温度温度是影响场效应管性能的重要因素之一。

温度升高会导致部分参数值发生变化，例如阈值电压、最大漏极电流等。

因此，在设计电子设备时，需要考虑温度对IRF540的参数的影响。

3.2 应用电压应用电压是指场效应管在工作时所受到的电压大小。

应用电压的增加会导致参数值的变化，例如漏极-源极电阻的增加。

因此，在选择IRF540时，需要根据实际应用的电压范围来确定其性能是否满足要求。

3.3 外部电路外部电路的设计对IRF540的参数也有一定影响。

例如，驱动电路的设计直接影响到场效应管的导通和截止；负载电路的特性也会影响到其工作状态。

因此，在设计电路时，需要综合考虑外部电路对IRF540参数的影响。