HD74ALVC1G126VS中文资料

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74HCT1G126中文资料

74HCT1G UNIT TYP. 5.0 − − +25 MAX. 5.5 VCC VCC +125 V V V °C
tr, tf
− − −
1000 500 400
− − −
− − −
− 500 −
ns ns ns
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V); notes 1 and 2. SYMBOL VCC IIK IOK IO ICC Tstg PD Notes 1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and functional operation of the device at these or any other conditions beyond those under ‘recommended operating conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 3. Above 55 °C the value of PD derates linearly with 2.5 mW/K. PARAMETER supply voltage input diode current output diode current output source or sink current VCC or GND current storage temperature power dissipation per package for temperature range from −40 to +125 °C; note 3 VI < −0.5 V or VI > VCC + 0.5 V VO < −0.5 V or VO > VCC + 0.5 V −0.5 V < VO < VCC + 0.5 V CONDITIONS MIN. −0.5 − − − − −65 − MAX. +7.0 ±20 ±20 ±35.0 ±70 +150 200 UNIT V mA mA mA mA °C mW

中微爱芯逻辑芯片AIP74LV AIP74LVC系列

概述：AiP74LVC1G18是2选1的同相多路分解器，具有3态输出。

设备根据输入的状态是否缓冲输入A上的数据并将其传递给输出1Y或2Y 输入（引脚S）为LOW或HIGH。

可以从3.3或5V设备驱动输入。

这些功能允许在3.3V和5V混合环境中使用这些设备。

该设备完全指定用于使用IOFF的部分掉电应用。

IOFF电路会禁用输出，以防止在断电时通过设备的有害回流电流。

特点：宽电源电压范围为1.65V至5.5V 5V耐压输入，可与5V逻辑±24mA 输出驱动器接口（VCC = 3.0V）CMOS低功耗锁存性能超过250mA 具有TTL电平的直接接口在-40℃至+ 85℃包装信息：SOT-23-6 / SOT-363AiP74LVC2G04概述：AiP74LVC2G04提供了双反相缓冲器。

输入可以由3.3V或5V器件驱动。

这些功能允许在3.3V和5V混合环境中使用这些器件。

该器件完全指定用于使用IOFF的部分掉电应用。

IOFF电路禁用输出，以防止在断电时流经该器件的有害回流电流。

宽电源电压范围为1.65V至5.5V5V耐压输入，用于与5V逻辑接口高抗扰度±24mA输出驱动（VCC = 3.0V）CMOS低功耗闩锁性能超过250mA与TTL电平直接接口输入可接受高达5V的电压多种包装选择规定温度为-40℃至+ 85℃包装信息：SOT23-6 / SOT36374系列产品AiP74HC/HCT/LVC系列:拥有74HC/HCT/LVC等系列品种上百款，可完全替换进口TI/NXP/ON等公司逻辑产品。

74系列产品广泛应用各种电子产品中，如家电、数码产品、仪器仪表、工业设备、电信及网络设备等，用于数据放大、运算、锁存、移位等处理，工作温度范围-40℃到85℃。

74HCXXX、74HCTXXX、74LVCXXX等是指对应的芯片系列，“XXX”表示芯片具体型号。

>> 有批量现货产品如下：•门电路AiP74HC00，AiP74HCT00，AiP74HC02，AiP74HC05，AiP74HC08，AiP74HCT08，AiP74HC20，AiP74HC32，AiP74HC86，AiP74HCT86•反相器/缓冲器/驱动器/收发器AiP74HC04，AiP74HCT04，AiP74HC07，AiP74HC14，AiP74HC125，AiP74HC126，AiP74HC244，AiP74HCT244，AiP74HC245，AiP74HCT245•编码器/译码器AiP74HC138，AiP74HCT138，AiP74HCT139，AiP74HC148，AiP74HC238•数字复用器AiP74HC157•触发器AiP74HC74，AiP74HC273，AiP74HC374，AiP74HC574•锁存器AiP74HC373，AiP74HC563，AiP74HC573，AiP74HCT573•移位寄存器AiP74HC164，AiP74HC165，AiP74HC595•计数器AiP74HC191，AiP74HC192，AiP74HC193•多频振荡器74HC123>> 可接受提前一个月订货产品如下：•门电路AiP74HCT02，AiP74HC03，AiP74HCT03，AiP74HC10，AiP74HCT10，AiP74HC11，AiP74HCT11，AiP74HCT20，AiP74HC21，AiP74HCT21，AiP74HC27，AiP74HCT27，AiP74HC30，AiP74HCT30，AiP74HCT32，AiP74HC58，AiP74HCT58，AiP74HC132，AiP74HCT132，AiP74HC4002，AiP74HCT4002，AiP74HC4075，AiP74HCT4075，AiP74HC7266，AiP74HCT7266•反相器/缓冲器/驱动器/收发器AiP74HCT05，AiP74HCT14，AiP74HCT125，AiP74HCT126，AiP74HC240，AiP74HCT240，AiP74HC241，AiP74HCT241，AiP74HC243，AiP74HCT243，AiP74HC365，AiP74HCT365，AiP74HC366，AiP74HCT366，AiP74HC367，AiP74HCT367，AiP74HC368，AiP74HCT368，AiP74HC540，AiP74HCT540，AiP74HC541，AiP74HCT541，AiP74HC640，AiP74HCT640，AiP74HC4049，AiP74HCT4049，AiP74HC4050，AiP74HCT4050，AiP74HC7014•编码器/译码器AiP74HC42，AiP74HCT42，AiP74HC47，AiP74HC48，AiP74HC137，AiP74HCT137，AiP74HCT139，AiP74HC147，AiP74HCT147，AiP74HCT148，AiP74HC237，AiP74HCT237，AiP74HC238，AiP74HCT238•数字复用器AiP74HC151，AiP74HCT151，AiP74HC153，AiP74HCT153，AiP74HCT157，AiP74HC158，AiP74HCT158，AiP74HC251，AiP74HCT251，AiP74HC253，AiP74HCT253，AiP74HC257，AiP74HCT257，AiP74HC258，AiP74HCT258•触发器AiP74HCT74，AiP74HCT273，AiP74HCT374，AiP74HC534，AiP74HCT534，AiP74HC564，AiP74HCT564，AiP74HCT574•锁存器AiP74HCT373，AiP74HCT563•计数器AiP74HC160，AiP74HCT160，AiP74HC161，AiP74HCT161，AiP74HC162，AiP74HC162，AiP74HC163，AiP74HCT163，AiP74HC190，AiP74HCT190，AiP74HCT191，AiP74HCT192，AiP74HCT193•数字比较器/多频振荡器/奇偶校验器/全加器AiP74HC85，AiP74HCT85，AiP74HCT123，AiP74HC280，AiP74HCT280，AiP74HC283，AiP74HCT283>> 有现货产品如下：•门电路AiP74LVC00，AiP74LVC08，AiP74LVC32，AiP74LVC1G00，AiP74LVC1G08，AiP74LVC1G27，AiP74LVC1G32，AiP74LVC1G38，AiP74LVC1G86，AiP74LVC2G08 •反相器/缓冲器/驱动器/收发器AiP74LVC04，AiP74LVC1G04，AiP74LVC1G07，AiP74LVC1G14，AiP74LVC1G17，AiP74LVC1G125，AiP74LVC1G126，AiP74LVC2G04，AiP74LVC2GU04，AiP74LVC2G14，AiP74LVC2G34•编码器/译码器AiP74LVC138，AiP74LVC1G18•数字复用器AiP74LVC157，AiP74LVC1G157•触发器AiP74LVC74，AiP74LVC1G74>> 可接受提前一个月订货产品如下：•门电路AiP74LVC02，AiP74LVC03，AiP74LVC10，AiP74LVC11，AiP74LVC20，AiP74LVC27，AiP74LVC30，AiP74LVC86，AiP74LVC132，AiP74LVC1G02，AiP74LVC1G10，AiP74LVC1G11，AiP74LVC1G57，AiP74LVC1G58，AiP74LVC1G97，AiP74LVC1G98，AiP74LVC1G99，AiP74LVC1G332，AiP74LVC1G386，AiPLVC2G00，AiPLVC2G02，AiPLVC2G32，AiPLVC2G38，AiPLVC2G86•反相器/缓冲器/驱动器/收发器AiP74LVCU04，AiP74LVC05，AiP74LVC06，AiP74LVC07，AiP74LVC14，AiP74LVC17，AiP74LVC125，AiP74LVC126，AiP74LVC240，AiP74LVC244，AiP74LVC245，AiP74LVC365，AiP74LVC367，AiP74LVC541，AiP74LVC623，AiP74LVC1GU04，AiP74LVC1G06，AiP74LVC1G34，AiP74LVC2G06，AiP74LVC2G07，AiP74LVC2G16，AiP74LVC2G17，AiPLVC2G125，AiPLVC2G126，AiPLVC2G240，AiPLVC2G241•编码器/译码器AiP74LVC139，AiP74LVC1G16，AiPLVC1G19•数字复用器AiP74LVC153，AiP74LVC251，AiP74LVC257•触发器AiP74LVC273，AiP74LVC374，AiP74LVC377，AiP74LVC574AiPLVC1G79，AiPLVC1G80，AiPLVC1G175•锁存器AiP74LVC373，AiP74LVC573•移位寄存器AiP74LVC594，AiP74LVC595以上是“奥伟斯科技”分享的产品信息，如果您需要订购此款物料，请查看我们的官网与我们联系，非常感谢您的关注与支持！奥伟斯科技提供专业的智能电子锁触摸解决方案,并提供电子锁整套的芯片配套:低功耗触摸芯片、低功耗单片机、马达驱动芯片、显示驱动芯片、刷卡芯片、时针芯片、存储芯片、语音芯片、低压MOS管、TVS二极管；中微爱芯LCD显示驱动IC：AiP31107 AiP31107E AiP31108、AiP31108U、AiP31108E、AiP31066 AiP31066LC AiP31068 AiP31065 AiP31065L AiP31063 AiP31086U AiP31020 AiP31021 AiP31520 CS1621 AIP31621D AIP31621E CS1622 CS75823优势产品未尽详细，欢迎查询！。

SN74LVC1G126DCKR中文资料

°C/W
°C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
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元器件交易网
SN74LVC1G126 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT
SCES224N – APRIL 1999 – REVISED FEBRUARY 2007
SON – DRY
Reel of 5000 SN74LVC1G126DRYR
–40°C to 85°C SOT (SOT-23) – DBV
Reel of 3000 SN74LVC1G126DBVR Reel of 250 SN74LVC1G126DBVT
SOT (SC-70) – DCK
Reel of 3000 SN74LVC1G126DCKR Reel of 250 SN74LVC1G126DCKT

HD74ACT126P中文资料

HD74AC126/HD74ACT126Quad Buffer/Line Driver with 3-State OutputADE-205-367 (Z)1st. EditionSep. 2000 DescriptionThe HD74AC126/HD74ACT126 is an quad buffer and line driver designed to be employed as a memory address driver, clock driver and bus oriented transmitter/receiver which provides improved PC board density.Features• 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers• Outputs Source/Sink 24 mA• HD74ACT126 has TTL-Compatible InputsPin ArrangementHD74AC126/HD74ACT1262Logic SymbolPin NamesD Data InputsE 3-State Output Enable Inputs (Active High)OOutputsTruth TableInputs E D Output H L L H H H L XZH :High Voltage Level L :Low Voltage Level X :ImmaterialZ:High ImpedanceDC Characteristics (unless otherwise specified)ItemSymbol Max Unit ConditionMaximum Quiescent Supply Current I CC 80µA V IN = V CC or ground, V CC = 5.5 V,Ta = Worst caseMaximum Quiescent Supply Current I CC 8.0µA V IN = V CC or ground, V CC = 5.5 V,Ta = 25°CMaximum I CC /Input (HD74ACT126)I CCT1.5mAV IN = V CC – 2.1 V, V CC = 5.5 V Ta = Worst caseHD74AC126/HD74ACT1263AC Characteristics: HD74AC126Ta = +25°C C L = 50 pFTa = –40°C to +85°C C L = 50 pF ItemSymbol V CC (V)*1Min Typ Max Min Max Unit Propagation Delay t PLH 3.3 1.0 6.59.0 1.010.0ns5.0 1.0 5.57.0 1.07.5Propagation Delay t PHL 3.3 1.06.59.0 1.010.05.0 1.0 5.07.0 1.07.5Enable Time t ZH 3.3 1.0 6.512.5 1.013.05.0 1.0 5.59.0 1.09.5Enable Time t ZL 3.3 1.07.012.0 1.013.05.0 1.0 5.59.0 1.09.5Disable Time t HZ 3.3 1.08.012.0 1.012.55.0 1.0 6.510.0 1.010.5Disable Time t LZ3.3 1.07.012.5 1.013.55.01.06.010.01.010.5Note:1.Voltage Range 3.3 is 3.3 V ± 0.3 VVoltage Range 5.0 is 5.0 V ± 0.5 VAC Characteristics: HD74ACT125Ta = +25°C C L = 50 pFTa = –40°C to +85°C C L = 50 pF ItemSymbol V CC (V)*1Min Typ Max Min Max Unit Propagation Delay t PLH 5.0 1.0 6.59.0 1.010.0nsPropagation Delay t PHL 5.0 1.07.09.0 1.010.0Enable Time t ZH 5.0 1.0 6.09.0 1.010.0Enable Time t ZL 5.0 1.07.010.0 1.011.0Disable Time t HZ 5.0 1.08.010.5 1.011.5Disable Time t LZ5.01.07.010.51.011.5Note:1.Voltage Range 5.0 is 5.0 V ± 0.5 VCapacitanceItemSymbol Typ Unit Condition Input CapacitanceC IN 4.5pF V CC = 5.5 V Power Dissipation CapacitanceC PD45.0pFV CC = 5.0 VHD74AC126/HD74ACT126 Package Dimensions4HD74AC126/HD74ACT1265HD74AC126/HD74ACT1266Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright © Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.Hitachi Asia Ltd. Hitachi Tower16 Collyer Quay #20-00, Singapore 049318Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877URL : .sg URLNorthAmerica : /Europe : /hel/ecg Asia : Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.(Taipei Branch Office)4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TPURL : Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre,Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong KongTel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281URL : Hitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 585160Hitachi Europe GmbHElectronic Components Group Dornacher Stra βe 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:Colophon 2.0。

HD74ALVC162834T资料

HD74ALVC16283418-bit Universal Bus Driver with 3-state Outputsand Inverted Latch EnableADE-205-217D (Z)5th. EditionDecember 1999 DescriptionThe HD74ALVC162834 is an 18-bit universal bus driver designed for 2.3 V to 3.6 V Voperation.CCData flow from A to Y is controlled by the output enable (OE). The device operates in the transparent mode when the latch enable (LE) is low. When LE is low, the A data is latched if the clock (CLK) input is held at a high or low logic level. If the LE is high, the A data is stored in the latch/flip flop on the low to high transition of CLK. When OE is high, the outputs are in the high impedance state.To ensure the high impedance state during power up or power down, OE should be tied to Vthrough aCCpullup registor; the minimum value of the registor is determined by the current sinking capability of the driver.All outputs, which are designed to sink up to 12 mA, include 26 Ω resistors to reduce overshoot and undershoot.Features• Meets “PC SDRAM registered DIMM design support document, Rev. 1.2”• V CC = 2.3 V to 3.6 V• Typical V OL ground bounce < 0.8 V (@V CC = 3.3 V, Ta = 25°C)• Typical V OH undershoot > 2.0 V (@V CC = 3.3 V, Ta = 25°C)• High output current ±12 mA (@V CC = 3.0 V)• All outputs have equivalent 26 Ω series resistors, so no external resistors are requiredHD74ALVC1628342Function TableInputs OE LE CLK A Output Y H X X X Z L L X L L L L X H H L H ↑L L L H ↑H H L HL or HXY 0 *1H :High level L :Low level X :ImmaterialZ :High impedance↑ :Low to high transitionNote:1.Output level before the indicated steady-state input conditions were established.HD74ALVC162834 Pin Arrangement3HD74ALVC1628344Absolute Maximum RatingsItemSymbol Ratings Unit ConditionsSupply voltage range V CC –0.5 to 4.6V Input voltage range *1V I –0.5 to 4.6V Output voltage range *1, 2V O –0.5 to V CC +0.5V Input clamp current I IK –50mA V I < 0Output clamp current I OK ±50mA V O < 0 or V O > V CC Continuous output current I O±50mA V O = 0 to V CC V CC , GND current / pin I CC or I GND ±100mA Maximum power dissipation at Ta = 55°C (in still air) *3P T 1W TSSOP Storage temperature rangeTstg–65 to 150°CStresses beyond those listed under “absolute maximum ratings” may cause permanent damage to thedevice. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating condition” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.Notes: 1.The input and output negative-voltage ratings may be exceeded if the input and output clampcurrent ratings are observed.2.The input and output positive-voltage ratings may be exceeded up to 4.6 V if the input and outputclamp-current ratings are observed.3.The maximum power dissipation is calculated using a junction temperature of 150°C and boardtrace length of 750 mils.Recommended Operating ConditionsItemSymbol Min Max Unit ConditionsSupply voltage V CC 2.3 3.6V Input voltage V I 0V CC V Output voltageV O 0V CC V High-level output currentI OH—–6mAV CC = 2.3 V —–8V CC = 2.7 V —–12V CC = 3.0 V Low-level output currentI OL—6mA V CC = 2.3 V —8V CC = 2.7 V —12V CC = 3.0 V Input transition rise or fall rate ∆t/∆v 010ns/V Operating free-air temperatureTa–4085°C Note: Unused or floating control pins must be held high or low.HD74ALVC162834 Logic Diagram5HD74ALVC1628346Electrical CharacteristicsTa = –40 to 85°CItem Symbol V CC (V)Min Max Unit Test Conditions Input voltageV IH 2.3 to 2.7 1.7—V2.7 to3.6 2.0—V IL2.3 to 2.7—0.7V2.7 to3.6—0.8Output voltageV OH2.3 to3.6V CC –0.2—VI OH = –100 µA2.3 1.9—I OH = –4 mA, V IH = 1.7 V 2.3 1.7—I OH = –6 mA, V IH = 1.7 V3.0 2.4—I OH = –6 mA, V IH = 2.0 V 2.7 2.0—I OH = –8 mA, V IH = 2.0 V 3.02.0—I OH = –12 mA, V IH = 2.0 V V OL2.3 to3.6—0.2V I OL = 100 µA2.3—0.4I OL = 4 mA, V IL = 0.7 V 2.3—0.55I OL = 6 mA, V IL = 0.7 V3.0—0.55I OL = 6 mA, V IL = 0.8 V 2.7—0.6I OL = 8 mA, V IL = 0.8 V 3.0—0.8I OL = 12 mA, V IL = 0.8 V Input currentI IN 3.6—±5.0µA V IN = V CC or GND Off state output currentI OZ 3.6—±10µA V OUT = V CC or GND Quiescent supply current I CC3.6—40µA V IN = V CC or GND∆I CC3.0 to 3.6—750µA One input at (V CC –0.6)V,other inputs at V CC or GNDHD74ALVC1628347Switching Characteristics (Ta = –40 to 85°C)ItemSymbol V CC (V)Min Typ Max Unit From (Input)To (Output)Maximum clock f max2.5±0.2150——MHzfrequency2.7150——3.3±0.3150——Propagation delay timet PLH 2.5±0.2 1.0— 5.0nsAYt PHL2.7—— 5.03.3±0.3 1.0—4.22.5±0.2 1.4— 6.0LEY2.7—— 6.13.3±0.3 1.4— 5.42.5±0.2 1.4— 6.3CLKY2.7—— 6.13.3±0.31.4— 5.4Output enable timet ZH 2.5±0.2 1.4— 6.3nsOEYt ZL2.7—— 6.53.3±0.3 1.1— 5.5Output disable timet HZ 2.5±0.2 1.0— 4.4nsOEYt LZ2.7—— 4.93.3±0.3 1.3—4.5Input capacitance C IN 3.3 3.0 4.57.0pFControl inputs 3.3 3.0 6.09.0Data inputs Output capacitanceC O3.33.07.09.0pF Y portsHD74ALVC1628348Switching Characteristics (Ta = –40 to 85°C) (cont)Item Symbol V CC (V)Min Typ Max Unit From (Input)Setup timet su2.5±0.2 2.1——nsData before CLK ↑2.7 2.1——3.3±0.3 1.7——2.5±0.2 1.2——Data before LE ↑2.7 1.6——CLK “H”3.3±0.3 1.3——2.5±0.2 1.4——Data before LE ↑2.7 1.5——CLK “L”3.3±0.31.2——Hold timet h2.5±0.20.6——nsData after CLK ↑2.70.6——3.3±0.30.7——2.5±0.20.8——Data after LE ↑2.7 1.1——CLK “H” or “L”3.3±0.31.1——Pulse widtht w2.5±0.23.3——nsLE “L”2.7 3.3——3.3±0.3 3.3——2.5±0.2 3.3——CLK “H” or “L”2.73.3——3.3±0.33.3——Switching Characteristics (Ta = 0 to 85°C)Item Symbol V CC (V)Min Typ Max Unit FROM (Input)TO(Output)Propagation C L =0pF *1t PLH , t PHL 3.3±0.1650.9— 2.0nsA Y delay timeC L =50pF 3.3±0.165 1.0— 4.5C L =0pF *1 3.3±0.165 1.4— 2.9CLK Y C L =50pF 3.3±0.165 1.9— 4.5C L =50pFt SSO *1, 2 3.3±0.165 1.9— 4.8CLK, AY Output rise /fall timeC L =50pFt TLH , t THL*13.3±0.165 1.0—2.5volts/nsYNotes: 1.This parameter is characterized but not tested.2.t SSO : Simultaneous switching output time.HD74ALVC1628349Operating Characteristics (Ta = 25°C)ItemSymbolV CC = 2.5±0.2 V V CC = 3.3±0.3 V Unit Test ConditionsTypTyp Power dissipation Outputs enable C pd 22.024.5pFC L = 0, f = 10 MHz capacitanceOutputs disable5.06.0Test CircuitHD74ALVC162834 Waveforms – 1Waveforms – 210Waveforms – 3IV Characteristics for Register Output (Measured value)Package DimensionsUnit : mmCautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/index.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。

74LVC1G74DC-G中文资料

N JESD8-7 (1.65 V to 1.95 V) N JESD8-5 (2.3 V to 2.7 V) N JESD8-B/JESD36 (2.7 V to 3.6 V) I ±24 mA output drive (VCC = 3.0 V) I ESD protection: N HBM JESD22-A114E exceeds 2000 V N MM JESD22-A115-A exceeds 200 V I CMOS low power consumption I Latch-up performance exceeds 250 mA I Direct interface with TTL levels I Inputs accept voltages up to 5 V I Multiple package options I Speciﬁed from −40 °C to +85 °C and −40 °C to +125 °C
2 of 20
NXP Semiconductors
74LVC1G74
Single D-type ﬂip-ﬂop with set and reset; positive edge trigger
C
C C
D
C RD
SD
CP
C
C
Fig 3. Logic diagram
6. Pinning information
plastic extremely thin small outline package; no leads; SOT996-2 8 terminals; UTLP based; body 3 × 2 × 0.5 mm
plastic extremely thin quad ﬂat package; no leads; 8 terminals; UTLP based; body 1.6 × 1.6 × 0.5 mm

HD74ALVC1G04VS中文资料

Item Propagation delay time
Rev.0, Jun. 2001, page 6 of 10
HD74ALVC1G04
Operating Characteristics
(Ta = 25°C)
Item Power dissipation capacitance Symbol CPD VCC (V) 1.5 1.8 2.5 3.3 Min Typ 9.5 9.5 10.0 10.5 Max Unit pF Test conditions f = 10 MHz
Rev.0, Jun. 2001, page 4 of 10
HD74ALVC1G04
Electrical Characteristics
(Ta = −40 to 85°C)
Item Input voltage Symbol VIH VCC (V) 1.2 1.4 to 1.6 1.65 to 1.95 2.3 to 2.7 3.0 to 3.6 VIL 1.2 1.4 to 1.6 1.65 to 1.95 2.3 to 2.7 3.0 to 3.6 Output voltage VOH Min to Max 1.2 1.4 1.65 2.3 3.0 VOL Min to Max 1.2 1.4 1.65 2.3 3.0 Input current Quiescent supply current Output leakage current Input capacitance IIN ICC IOFF CIN 3.6 3.6 0 3.3
•
VCC = 1.8±0.15 V
Symbol tPLH tPHL Min 1.5 Typ Max 5.0 Unit ns Test conditions CL = 30 pF FROM (Input) A TO (Output) Y

74LVC1G125GW中文资料

4
Philips Semiconductors
Product speciﬁcation
Bus buffer/line driver; 3-state
74LVC1G125
handbook, halfpage
A
Y
OE
MNA120
Fig.5 Logic diagram.
2004 Sep 15
5
Philips Semiconductors
INTEGRATED CIRCUITS
DATA SHEET
74LVC1G125 Bus buffer/line driver; 3-state
Product speciﬁcation Supersedes data of 2002 Nov 18 2004 Sep 15
Philips Semiconductors
74LVC1G125
MAX. 5.5 5.5 VCC 5.5 5.5 +125 20 10 V V V V V
UNIT
°C ns/V ns/V
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC IIK VI IOK VO PARAMETER supply voltage input diode current input voltage output diode current output voltage VI < 0 V note 1 VO > VCC or VO < 0 V enable mode; notes 1 and 2 disable mode; notes 1 and 2 IO ICC, IGND Tstg Ptot Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation. output source or sink current VCC or GND current storage temperature power dissipation Tamb = −40 °C to +125 °C VO = 0 V to VCC CONDITIONS − −0.5 − −0.5 −0.5 − − −65 − MIN. −0.5 MAX. +6.5 −50 +6.5 ±50 +6.5 +6.5 ±50 ±100 +150 250 V mA V mA V V mA mA °C mW UNIT

74LVC1G10中文资料

Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
output voltage
Active mode
ambient temperature
Power-down mode; VCC = 0 V
input transition rise and fall rate VCC = 1.65 V to 2.7 V VCC = 2.7 V to 5.5 V
Tamb = −40 °C to +125 °C
-
100
mA
−100
-
mA
[3] -
250
mW
−65
+150
°C
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Features
s Wide supply voltage range from 1.65 V to 5.5 V s High noise immunity s Complies with JEDEC standard:
x JESD8-7 (1.65 V to 1.95 V) x JESD8-5 (2.3 V to 2.7 V) x JESD8-B/JESD36 (2.7 V to 3.6 V). s ±24 mA output drive (VCC = 3.0 V) s CMOS low power consumption s Latch-up performance exceeds 250 mA s Direct interface with TTL levels s Inputs accept voltages up to 5 V s ESD protection: x HBM JESD22-A114E exceeds 2000 V x MM JESD22-A115-A exceeds 200 V x CDM JESD22-C101-C exceeds 1000 V s Multiple package options s Speciﬁed from −40 °C to +85 °C and −40 °C to +125 °C

M74VHC1G126DFT1G,M74VHC1G126DTT1G,MC74VHC1G126DFT1,MC74VHC1G126DTT1, 规格书,Datasheet 资料

MC74VHC1G126Noninverting 3-State BufferThe MC74VHC1G126 is an advanced high speed CMOS noninverting 3−state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.The internal circuit is composed of three stages, including a buffered 3−state output which provides high noise immunity and stable output.The MC74VHC1G126 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G126 to be used to interface 5 V circuits to 3 V circuits.Features•High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V•Low Power Dissipation: I CC = 1 m A (Max) at T A = 25°C •Power Down Protection Provided on Inputs •Balanced Propagation Delays•Pin and Function Compatible with Other Standard Logic Families •Chip Complexity: FETs = 58; Equivalent Gates = 15•These Devices are Pb −Free and are RoHS CompliantFigure 1. Pinout (Top View)V CCOE IN A OUT YGNDIN AOUT YOE Figure 2. Logic SymbolSee detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.ORDERING INFORMATIONFUNCTION TABLEL H XA InputY OutputL H ZOE InputH H LPIN ASSIGNMENT123GND OE IN A 45V CCOUT Y SC −88A / SOT −353 / SC −70DF SUFFIX CASE 419ATSOP −5 / SOT −23 / SC −59DT SUFFIX CASE 483MARKINGDIAGRAMS515W2= Device Code M = Date Code*G = Pb −Free Package15W2 M G G M(Note: Microdot may be in either location)*Date Code orientation and/or position may vary depending upon manufacturing location.MAXIMUM RATINGSSymbol CharacteristicsValue Unit V CC DC Supply Voltage −0.5 to +7.0V V IN DC Input Voltage −0.5 to +7.0V V OUT DC Output Voltage V CC = 0High or Low State−0.5 to 7.0−0.5 to V CC + 0.5V I IK Input Diode Current −20mA I OK Output Diode Current V OUT < GND; V OUT > V CC+20mA I OUT DC Output Current, per Pin +25mA I CC DC Supply Current, V CC and GND +50mA P D Power dissipation in still air SC −88A, TSOP −5200mW q JA Thermal resistanceSC −88A, TSOP −5333°C/W T L Lead temperature, 1 mm from case for 10 secs 260°C T J Junction temperature under bias +150°C T stg Storage temperature −65 to +150°C V ESDESD Withstand VoltageHuman Body Model (Note 1)Machine Model (Note 2)Charged Device Model (Note 3)> 2000> 200N/A VI LatchupLatchup Performance Above V CC and Below GND at 125°C (Note 4)±500mAStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.Tested to EIA/JESD22−A114−A2.Tested to EIA/JESD22−A115−A3.Tested to JESD22−C101−A4.Tested to EIA/JESD78RECOMMENDED OPERATING CONDITIONSSymbol CharacteristicsMin Max Unit V CC DC Supply Voltage 2.0 5.5V V IN DC Input Voltage 0.0 5.5V V OUT DC Output Voltage0.0V CC V T A Operating Temperature Range −55+125°C t r , t fInput Rise and Fall TimeV CC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V0010020ns/VDevice Junction Temperature versus Time to 0.1% Bond FailuresJunction Temperature °CTime, Hours Time, Years801,032,200117.890419,30047.9100178,70020.411079,6009.412037,000 4.213017,800 2.01408,9001.011101001000TIME, YEARSN O R M A L I Z E D F A I L U R E R A T EFigure 3. Failure Rate vs. Time Junction TemperatureDC ELECTRICAL CHARACTERISTICSSymbol Parameter Test Conditions V CC(V)T A = 25°C T A≤ 85°C−55 ≤ T A≤ 125°CUnit Min Typ Max Min Max Min MaxV IH Minimum High−LevelInput Voltage 2.03.04.55.51.52.13.153.851.52.13.153.851.52.13.153.85VV IL Maximum Low−LevelInput Voltage 2.03.04.55.50.50.91.351.650.50.91.351.650.50.91.351.65VV OH Minimum High−LevelOutput VoltageV IN = V IH or V IL V IN = V IH or V ILI OH = −50 m A2.03.04.51.92.94.42.03.04.51.92.94.41.92.94.4VV IN = V IH or V ILI OH = −4 mAI OH = −8 mA3.04.52.583.942.483.802.343.66VV OL Maximum Low−LevelOutput VoltageV IN = V IH or V IL V IN = V IH or V ILI OL = 50 m A2.03.04.50.00.00.00.10.10.10.10.10.10.10.10.1VV IN = V IH or V ILI OL = 4 mAI OL = 8 mA3.04.50.360.360.440.440.520.52VI OZ Maximum 3−StateLeakage Current V IN = V IH or V ILV OUT = V CC or GND5.5±0.25±2.5±2.5m AI IN Maximum InputLeakage Current V IN = 5.5 V or GND0 to5.5±0.1±1.0±1.0m AI CC Maximum QuiescentSupply CurrentV IN = V CC or GND 5.5 1.02040m A AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f= 3.0 nsSymbol Parameter Test ConditionsT A = 25°C T A≤ 85°C−55 ≤ T A≤ 125°CUnit Min Typ Max Min Max Min Maxt PLH, t PHL Maximum PropagationDelay, Input A to Y(Figures 3. and 5.)V CC = 3.3 ± 0.3 V C L = 15 pFC L = 50 pF4.56.48.011.59.513.012.016.0nsV CC = 5.0 ± 0.5 V C L = 15 pFC L = 50 pF3.54.55.57.56.58.58.510.5t PZL, t PZH Maximum Output EnableTime, Input OE to Y(Figures 4. and 5.)V CC = 3.3 ± 0.3 V C L = 15 pFR L = 1000 W C L = 50 pF4.56.48.011.59.513.011.515.0nsV CC = 5.0 ± 0.5 V C L = 15 pFR L = 1000 W C L = 50 pF3.54.55.17.16.08.08.510.5t PLZ, t PHZ Maximum Output DisableTime, Input OE to Y(Figures 4. and 5.)V CC = 3.3 ± 0.3 V C L = 15 pFR L = 1000 W C L = 50 pF6.58.09.713.211.515.014.518.0nsV CC = 5.0 ± 0.5 V C L = 15 pFR L = 1000 W C L = 50 pF4.87.06.88.88.010.010.012.0C IN Maximum InputCapacitance4.0101010pFC OUT Maximum 3−State OutputCapacitance (Output inHigh Impedance State)6.0pFC PD Power Dissipation Capacitance (Note 5)Typical @ 25°C, V CC = 5.0 VpF8.05.C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.Average operating current can be obtained by the equation: I CC(OPR) = C PD V CC f in + I CC. C PD is used to determine the no−load dynamic power consumption; P D = C PD V CC2 f in + I CC V CC.SWITCHING WAVEFORMSFigure 4. Switching Waveforms Figure 5.YV CC GNDHIGHIMPEDANCEYYOE*Includes all probe and jig capacitance C L *TEST POINT Figure 6. Test Circuit *Includes all probe and jig capacitanceFigure 7. Test CircuitTEST POINT CONNECT TO V CC WHEN TESTING t PLZ AND t PZL.CONNECT TO GND WHEN TESTING t PHZ AND t PZH.HIGHIMPEDANCEV CCGNDAFigure 8. Input Equivalent CircuitINPUTORDERING INFORMATIONDevicePackageShipping †M74VHC1G126DFT1G SC −88A/SOT −353/SC −70(Pb −Free)3000 Units / Tape & ReelM74VHC1G126DFT2G SC −88A/SOT −353/SC −70(Pb −Free)M74VHC1G126DTT1GTSOP −5/SOT −23/SC −59(Pb −Free)†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.419A −01 OBSOLETE. NEW STANDARD 419A −02.4.DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.DIM A MIN MAX MIN MAX MILLIMETERS1.802.200.0710.087INCHES B 1.15 1.350.0450.053C 0.80 1.100.0310.043D 0.100.300.0040.012G 0.65 BSC 0.026 BSC H ---0.10---0.004J 0.100.250.0040.010K 0.100.300.0040.012N 0.20 REF 0.008 REF S2.00 2.200.0790.087B0.2 (0.008)MMD 5 PL SC −88A (SC −70−5/SOT −353)CASE 419A −02ISSUE KTSOP −5CASE 483−02ISSUE HNOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.5.OPTIONAL CONSTRUCTION: ANADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY .DIM MIN MAX MILLIMETERS A 3.00 BSC B 1.50 BSC C 0.90 1.10D 0.250.50G 0.95 BSC H 0.010.10J 0.100.26K 0.200.60L 1.25 1.55M 0 10 S2.503.00__ǒmm inchesǓ*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*2X2XDETAIL ZON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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SN74AHC1G126DBV中文资料

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74AUP1G126GW中文资料

74AUP1G126Low-power buffer/line driver; 3-stateRev. 01 — 25 July 2005Product data sheet1.General descriptionThe 74AUP1G126 is a high-performance, low-power, low-voltage, Si-gate CMOS device,superior to most advanced CMOS compatible TTL families.Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and falltimes across the entire V CC range from 0.8 V to 3.6 V.This device ensures a very low static and dynamic power consumption across the entireV CC range from 0.8 V to 3.6 V.This device is fully speciﬁed for partial Power-down applications using I OFF.The I OFF circuitry disables the output, preventing the damaging backﬂow current throughthe device when it is powered down.The 74AUP1G126 provides the single non-inverting buffer/line driver with 3-state output.The 3-state output is controlled by the output enable input (OE). A LOW level at pin OEcauses the output to assume a high-impedance OFF-state.This device has the input-disable feature, which allows ﬂoating input signals. The inputsare disabled when the output enable input OE is LOW.2.Featuress Wide supply voltage range from 0.8 V to3.6Vs High noise immunitys Complies with JEDEC standards:x JESD8-12 (0.8 V to1.3 V)x JESD8-11 (0.9 V to1.65V)x JESD8-7 (1.2 V to1.95V)x JESD8-5 (1.8 V to2.7V)x JESD8-B (2.7 V to3.6V)s ESD protection:x HBM JESD22-A114-C exceeds 2000Vx MM JESD22-A115-A exceeds 200Vx CDM JESD22-C101-C exceeds 1000Vs Low static power consumption; I CC = 0.9µA (maximum)s Latch-up performance exceeds 100mA per JESD 78 Class IIs Inputs accept voltages up to 3.6Vs Low noise overshoot and undershoot < 10 % of V CCs Input-disable feature allows ﬂoating input conditionss I OFF circuitry provides partial Power-down mode operation s Multiple package optionss Speciﬁed from −40°C to +85°C and −40°C to +125°C3.Quick reference data[1]C PD is used to determine the dynamic power dissipation (P D in µW).P D =C PD ×V CC 2×f i ×N +Σ(C L ×V CC 2×f o ) where:f i =input frequency in MHz;f o =output frequency in MHz;C L =output load capacitance in pF;V CC =supply voltage in V;N =number of inputs switching;Σ(C L ×V CC 2×f o )=sum of the outputs.[2]The condition is V I =GND to V CC .4.Ordering informationTable 1:Quick reference data GND =0V; T amb =25°C; t r =t f ≤3ns.SymbolParameterConditionsMin Typ Max Unit t PHL , t PLH propagation delay A to Y C L =5pF; R L =1M Ω;V CC =0.8V-20.6-ns C L =5pF; R L =1M Ω;V CC =1.1V to 1.3 V 2.8 5.511.8ns C L =5pF; R L =1M Ω;V CC =1.4V to 1.6 V 2.2 3.97.0ns C L =5pF; R L =1M Ω;V CC =1.65V to 1.95 V 1.9 3.2 5.5ns C L =5pF; R L =1M Ω;V CC =2.3V to 2.7 V 1.7 2.6 4.2ns C L =5pF; R L =1M Ω;V CC =3.0V to 3.6 V1.72.43.7ns C i input capacitance -0.9-pF C PDpower dissipation capacitancef = 10 MHz; output enabled [1][2]V CC =1.8 V - 3.6-pF V CC =3.3 V- 4.4-pF f =10MHz;output disabled [1][2]V CC =0.8 V to 3.6 V--pFTable 2:Ordering informationType numberPackageTemperature range NameDescriptionVersion 74AUP1G126GW −40°C to +125°C TSSOP5plastic thin shrink small outline package; 5 leads;body width 1.25 mmSOT353-174AUP1G126GM−40°C to +125°CXSON6plastic extremely thin small outline package;no leads;6 terminals; body 1×1.45×0.5mmSOT8865.Marking6.Functional diagram7.Pinning information7.1PinningTable 3:MarkingType number Marking code 74AUP1G126GW pN 74AUP1G126GMpNFig 1.Logic symbol Fig 2.IEC logic symbolFig 3.Logic diagrammna125A OEY 214mna12614OE2001aad069A OEYFig 4.Pin conﬁguration SOT353-1(TSSOP5)Fig 5.Pin conﬁguration SOT886 (XSON6)126OE V CCA GNDY001aab65312354126A 001aab654OEGNDn.c.V CCYTransparent top view2315467.2Pin description8.Functional description8.1Function table[1]H =HIGH voltage level;L =LOW voltage level;X =Don’t care;Z =high-impedance OFF-state.9.Limiting valuesTable 4:Pin descriptionSymbol Pin DescriptionTSSOP5XSON6OE 11output enable input A 22data input A GND 33ground (0V)Y 44data output Y n.c.-5not connected V CC56supply voltage Table 5:Function table [1]Input OutputOE A Y H L L H H H LXZTable 6:Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).Symbol Parameter Conditions Min Max Unit V CC supply voltage −0.5+4.6V I IK input clamping current V I <0V-−50mA V I input voltage [1]−0.5+4.6V I OK output clamping current V O >V CC or V O <0V -±50mAV O output voltage active mode [1]−0.5V CC +0.5V Power-down mode [1]−0.5+4.6V I O output current V O =0 V to V CC-±20mA I CCquiescent supply current-+50mA[1]The input and output voltage ratings may be exceeded if the input and output current ratings are observed.[2]For TSSOP5 packages: above 87.5°C the value of P tot derates linearly with 4.0mW/K.For XSON6 packages: above 45°C the value of P tot derates linearly with 2.4mW/K.10.Recommended operating conditions11.Static characteristicsI GND ground current -−50mA T stg storage temperature −65+150°C P tottotal power dissipationT amb =−40°C to +125°C[2]-250mWTable 6:Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).Symbol Parameter Conditions Min Max Unit Table 7:Recommended operating conditions Symbol Parameter ConditionsMin Max Unit V CC supply voltage 0.8 3.6V V I input voltage 0 3.6V V O output voltage active mode0V CC V Power-down mode; V CC =0V 0 3.6V T amb ambient temperature −40+125°C t r , t finput rise and fall timesV CC =0.8 V to 3.6V 0200ns/VTable 8:Static characteristicsAt recommended operating conditions; voltages are referenced to GND (ground =0V).Symbol Parameter ConditionsMinTypMaxUnitT amb = 25°C V IHHIGH-state input voltageV CC = 0.8 V0.70× V CC --V V CC = 0.9 V to 1.95 V 0.65× V CC --V V CC = 2.3 V to 2.7 V 1.6--V V CC = 3.0 V to 3.6 V2.0--VV ILLOW-state input voltageV CC = 0.8 V--0.30× V CC V V CC = 0.9 V to 1.95 V --0.35× V CC V V CC = 2.3 V to 2.7 V --0.7V V CC = 3.0 V to 3.6 V--0.9VV OHHIGH-state output voltageV I = V IH or V ILI O =−20µA; V CC = 0.8 V to 3.6 V V CC − 0.1--V I O =−1.1 mA; V CC = 1.1 V 0.75× V CC --V I O =−1.7 mA; V CC = 1.4 V 1.11--V I O =−1.9 mA; V CC = 1.65 V 1.32--V I O =−2.3 mA; V CC = 2.3 V 2.05--V I O =−3.1 mA; V CC = 2.3 V 1.9--V I O =−2.7 mA; V CC = 3.0 V 2.72--V I O =−4.0 mA; V CC = 3.0 V2.6--V V OLLOW-state output voltageV I = V IH or V ILI O = 20µA; V CC = 0.8 V to 3.6 V --0.1V I O = 1.1 mA; V CC = 1.1 V --0.3× V CC V I O = 1.7 mA; V CC = 1.4 V --0.31V I O = 1.9 mA; V CC = 1.65 V --0.31V I O = 2.3 mA; V CC = 2.3 V --0.31V I O = 3.1 mA; V CC = 2.3 V --0.44V I O = 2.7 mA; V CC = 3.0 V --0.31V I O = 4.0 mA; V CC = 3.0 V--0.44V I LI input leakage current V I =GND to 3.6V;V CC =0V to 3.6V --±0.1µA I OZ 3-state output OFF-state currentV I = V IH or V IL ; V O = 0 V to 3.6V;V CC = 0 V to 3.6 V--±0.1µA I OFF power-off leakage current V I or V O = 0 V to 3.6 V; V CC = 0 V --±0.2µA ∆I OFF additional power-off leakage current V I or V O = 0 V to 3.6V;V CC =0V to 0.2 V --±0.2µA I CC quiescent supply currentV I = GND or V CC ; I O =0A;V CC =0.8V to 3.6 V--0.5µA ∆I CCadditional quiescent supply current data input;V I =V CC −0.6V;I O =0A;V CC =3.3V[1]--40µA OE input; V I = V CC − 0.6 V; I O = 0A;V CC =3.3V[1]--110µA all inputs; V I = GND to 3.6 V;OE =GND; V CC =0.8V to 3.6V[2]--1µA C i input capacitance V CC = 0 V to 3.6 V; V I = GND or V CC -0.9-pF C ooutput capacitanceoutput enabled;V O =GND;V CC =0V - 1.7-pF output disabled; V CC = 0 V to 3.6 V;V O = GND or V CC-1.5-pFT amb =−40°C to +85°C V IHHIGH-state input voltageV CC = 0.8 V0.70× V CC --V V CC = 0.9 V to 1.95 V 0.65× V CC --V V CC = 2.3 V to 2.7 V 1.6--V V CC = 3.0 V to 3.6 V2.0--VTable 8:Static characteristics …continuedAt recommended operating conditions; voltages are referenced to GND (ground =0V).Symbol Parameter Conditions Min Typ Max UnitV ILLOW-state input voltageV CC = 0.8 V--0.30× V CC V V CC = 0.9 V to 1.95 V --0.35× V CC V V CC = 2.3 V to 2.7 V --0.7V V CC = 3.0 V to 3.6 V--0.9V V OHHIGH-state output voltageV I = V IH or V ILI O =−20µA; V CC = 0.8 V to 3.6 V V CC − 0.1--V I O =−1.1 mA; V CC = 1.1 V 0.7× V CC --V I O =−1.7 mA; V CC = 1.4 V 1.03--V I O =−1.9 mA; V CC = 1.65 V 1.30--V I O =−2.3 mA; V CC = 2.3 V 1.97--V I O =−3.1 mA; V CC = 2.3 V 1.85--V I O =−2.7 mA; V CC = 3.0 V 2.67--V I O =−4.0 mA; V CC = 3.0 V2.55--V V OLLOW-state output voltageV I = V IH or V ILI O = 20µA; V CC = 0.8 V to 3.6 V --0.1V I O = 1.1 mA; V CC = 1.1 V --0.3× V CC V I O = 1.7 mA; V CC = 1.4 V --0.37V I O = 1.9 mA; V CC = 1.65 V --0.35V I O = 2.3 mA; V CC = 2.3 V --0.33V I O = 3.1 mA; V CC = 2.3 V --0.45V I O = 2.7 mA; V CC = 3.0 V --0.33V I O = 4.0 mA; V CC = 3.0 V--0.45V I LI input leakage current V I =GND to 3.6V;V CC =0V to 3.6V --±0.5µA I OZ 3-state output OFF-state currentV I = V IH or V IL ; V O = 0 V to 3.6V;V CC = 0 V to 3.6 V--±0.5µA I OFF power-off leakage current V I or V O = 0 V to 3.6 V; V CC = 0 V --±0.5µA ∆I OFF additional power-off leakage current V I or V O = 0 V to 3.6V;V CC =0V to 0.2 V --±0.6µA I CC quiescent supply currentV I = GND or V CC ; I O =0A;V CC =0.8V to 3.6 V--0.9µA ∆I CCadditional quiescent supply current data input;V I =V CC −0.6V;I O =0A;V CC =3.3V[1]--50µA OE input; V I = V CC − 0.6 V; I O = 0A;V CC =3.3V[1]--120µA all inputs; V I = GND to 3.6 V;OE =GND; V CC =0.8V to 3.6V[2]--1µAT amb =−40°C to +125°C V IHHIGH-state input voltageV CC = 0.8 V0.75× V CC --V V CC = 0.9 V to 1.95 V 0.70× V CC --V V CC = 2.3 V to 2.7 V 1.6--V V CC = 3.0 V to 3.6 V2.0--VTable 8:Static characteristics …continuedAt recommended operating conditions; voltages are referenced to GND (ground =0V).Symbol Parameter Conditions Min Typ Max Unit[1]One input at V CC − 0.6 V , other input at V CC or GND.[2]To show I CC remains very low when the input-disable feature is enabled.V ILLOW-state input voltageV CC = 0.8 V--0.25× V CC V V CC = 0.9 V to 1.95 V --0.30× V CC V V CC = 2.3 V to 2.7 V --0.7V V CC = 3.0 V to 3.6 V--0.9V V OHHIGH-state output voltageV I = V IH or V ILI O =−20µA; V CC = 0.8 V to 3.6 V V CC − 0.11--V I O =−1.1 mA; V CC = 1.1 V 0.6× V CC --V I O =−1.7 mA; V CC = 1.4 V 0.93--V I O =−1.9 mA; V CC = 1.65 V 1.17--V I O =−2.3 mA; V CC = 2.3 V 1.77--V I O =−3.1 mA; V CC = 2.3 V 1.67--V I O =−2.7 mA; V CC = 3.0 V 2.40--V I O =−4.0 mA; V CC = 3.0 V2.30--V V OLLOW-state output voltageV I = V IH or V ILI O = 20µA; V CC = 0.8 V to 3.6 V --0.11V I O = 1.1 mA; V CC = 1.1 V --0.33× V CC VI O = 1.7 mA; V CC = 1.4 V --0.41V I O = 1.9 mA; V CC = 1.65 V --0.39V I O = 2.3 mA; V CC = 2.3 V --0.36V I O = 3.1 mA; V CC = 2.3 V --0.50V I O = 2.7 mA; V CC = 3.0 V --0.36V I O = 4.0 mA; V CC = 3.0 V--0.50V I LI input leakage current V I =GND to 3.6V;V CC =0V to 3.6V --±0.75µA I OZ 3-state output OFF-state currentV I = V IH or V IL ; V O = 0 V to 3.6V;V CC = 0 V to 3.6 V--±0.75µA I OFF power-off leakage current V I or V O = 0 V to 3.6 V; V CC = 0 V --±0.75µA ∆I OFF additional power-off leakage current V I or V O = 0 V to 3.6V;V CC =0V to 0.2 V --±0.75µA I CC quiescent supply currentV I = GND or V CC ; I O =0A;V CC =0.8V to 3.6 V-- 1.4µA ∆I CCadditional quiescent supply current data input;V I =V CC −0.6V;I O =0A;V CC =3.3V[1]--75µA OE input; V I = V CC − 0.6 V; I O = 0A;V CC =3.3V[1]--180µA all inputs; V I = GND to 3.6 V;OE =GND; V CC =0.8V to 3.6V[2]--1µATable 8:Static characteristics …continuedAt recommended operating conditions; voltages are referenced to GND (ground =0V).Symbol Parameter Conditions Min Typ Max Unit12.Dynamic characteristicsTable 9:Dynamic characteristicsVoltages are referenced to GND (ground=0V); for test circuit see Figure8Symbol Parameter Conditions Min Typ[1]Max Unit T amb = 25°C; C L = 5 pFt PHL, t PLH propagation delay A to Y see Figure6V CC = 0.8 V-20.6-nsV CC = 1.1 V to 1.3 V 2.8 5.511.8nsV CC = 1.4 V to 1.6 V 2.2 3.97.0nsV CC = 1.65 V to 1.95 V 1.9 3.2 5.5nsV CC = 2.3 V to 2.7 V 1.7 2.6 4.2nsV CC = 3.0 V to 3.6 V 1.7 2.4 3.7nst PZH, t PZL3-state output enable timeOE to Y see Figure7V CC = 0.8 V-71.6-ns V CC = 1.1 V to 1.3 V 3.1 6.213.7ns V CC = 1.4 V to 1.6 V 2.3 4.27.7ns V CC = 1.65 V to 1.95 V 1.9 3.3 5.9ns V CC = 2.3 V to 2.7 V 1.5 2.4 4.1ns V CC = 3.0 V to 3.6 V 1.3 2.0 3.4nst PHZ, t PLZ3-state output disable timeOE to Y see Figure7V CC = 0.8 V-10.3-ns V CC = 1.1 V to 1.3 V 2.6 4.27.0ns V CC = 1.4 V to 1.6 V 2.1 3.2 5.0ns V CC = 1.65 V to 1.95 V 2.1 3.1 4.7ns V CC = 2.3 V to 2.7 V 1.7 2.4 3.6ns V CC = 3.0 V to 3.6 V 2.1 2.8 4.2nsT amb = 25°C; C L = 10 pFt PHL, t PLH propagation delay A to Y see Figure6V CC = 0.8 V-24.0-nsV CC = 1.1 V to 1.3 V 3.2 6.413.7nsV CC = 1.4 V to 1.6 V 2.1 4.58.1nsV CC = 1.65 V to 1.95 V 1.9 3.8 6.3nsV CC = 2.3 V to 2.7 V 2.2 3.2 4.9nsV CC = 3.0 V to 3.6 V 2.1 3.0 4.5nst PZH, t PZL3-state output enable timeOE to Y see Figure7V CC = 0.8 V-75.3-ns V CC = 1.1 V to 1.3 V 3.57.115.5ns V CC = 1.4 V to 1.6 V 2.2 4.88.7ns V CC = 1.65 V to 1.95 V 1.8 3.9 6.7ns V CC = 2.3 V to 2.7 V 1.5 2.9 4.8ns V CC = 3.0 V to 3.6 V 1.4 2.6 4.1nst PHZ , t PLZ3-state output disable time OE to Ysee Figure 7V CC = 0.8 V -12.2-ns V CC = 1.1 V to 1.3 V 3.5 5.38.5ns V CC = 1.4 V to 1.6 V 2.2 4.1 6.1ns V CC = 1.65 V to 1.95 V 2.4 4.2 6.2ns V CC = 2.3 V to 2.7 V 1.9 3.2 4.7ns V CC = 3.0 V to 3.6 V2.44.15.9nsT amb = 25°C; C L = 15 pF t PHL , t PLHpropagation delay A to Ysee Figure 6V CC = 0.8 V -27.4-ns V CC = 1.1 V to 1.3 V 3.67.215.5ns V CC = 1.4 V to 1.6 V 3.0 5.19.1ns V CC = 1.65 V to 1.95 V 2.2 4.37.1ns V CC = 2.3 V to 2.7 V 2.0 3.7 5.6ns V CC = 3.0 V to 3.6 V2.03.55.2nst PZH , t PZL3-state output enable time OE to Ysee Figure 7V CC = 0.8 V -79.2-ns V CC = 1.1 V to 1.3 V 4.07.817.2ns V CC = 1.4 V to 1.6 V 3.0 5.49.7ns V CC = 1.65 V to 1.95 V 2.1 4.37.4ns V CC = 2.3 V to 2.7 V 1.8 3.4 5.4ns V CC = 3.0 V to 3.6 V1.63.14.7nst PHZ , t PLZ3-state output disable time OE to Ysee Figure 7V CC = 0.8 V -14.9-ns V CC = 1.1 V to 1.3 V 4.3 6.410.0ns V CC = 1.4 V to 1.6 V 3.0 5.07.2ns V CC = 1.65 V to 1.95 V 3.1 5.47.7ns V CC = 2.3 V to 2.7 V 2.4 4.0 5.8ns V CC = 3.0 V to 3.6 V3.25.37.7nsT amb = 25°C; C L = 30 pF t PHL , t PLHpropagation delay A to Ysee Figure 6V CC = 0.8 V -37.6-ns V CC = 1.1 V to 1.3 V 4.89.620.8ns V CC = 1.4 V to 1.6 V 4.0 6.712.0ns V CC = 1.65 V to 1.95 V 2.9 5.69.4ns V CC = 2.3 V to 2.7 V 2.7 4.87.3ns V CC = 3.0 V to 3.6 V2.74.66.4nsTable 9:Dynamic characteristics …continuedVoltages are referenced to GND (ground =0V); for test circuit see Figure 8Symbol ParameterConditions MinTyp[1]Max Unit[1]All typical values are measured at nominal V CC .[2]C PD is used to determine the dynamic power dissipation (P D in µW).P D =C PD ×V CC 2×f i ×N +Σ(C L ×V CC 2×f o ) where:f i =input frequency in MHz;f o =output frequency in MHz;C L =output load capacitance in pF;V CC =supply voltage in V;N =number of inputs switching;Σ(C L ×V CC 2×f o )=sum of the outputs.[3]The condition is V I =GND to V CC .t PZH , t PZL3-state output enable time OE to Ysee Figure 7V CC = 0.8 V -90.6-ns V CC = 1.1 V to 1.3 V 5.110.022.1ns V CC = 1.4 V to 1.6 V 4.0 6.912.3ns V CC = 1.65 V to 1.95 V 2.8 5.69.4ns V CC = 2.3 V to 2.7 V 2.4 4.57.0ns V CC = 3.0 V to 3.6 V2.4 4.2 6.4ns t PHZ , t PLZ3-state output disable time OE to Ysee Figure 7V CC = 0.8 V -51.6-ns V CC = 1.1 V to 1.3 V 6.09.814.9ns V CC = 1.4 V to 1.6 V 4.57.710.7ns V CC = 1.65 V to 1.95 V 5.28.812.2ns V CC = 2.3 V to 2.7 V 3.9 6.49.1ns V CC = 3.0 V to 3.6 V5.59.012.9nsT amb = 25°C C PDpower dissipation capacitance f = 10 MHz[2][3]output enabled V CC = 0.8 V - 3.2-pF V CC = 1.1 V to 1.3 V - 3.4-pF V CC = 1.4 V to 1.6 V - 3.5-pF V CC = 1.65 V to 1.95 V - 3.6-pF V CC = 2.3 V to 2.7 V - 4.0-pF V CC = 3.0 V to 3.6 V - 4.4-pF output disabled V CC = 3.0 V to 3.6 V--pFTable 9:Dynamic characteristics …continuedVoltages are referenced to GND (ground =0V); for test circuit see Figure 8Symbol ParameterConditions Min Typ [1]Max UnitTable 10:Dynamic characteristicsVoltages are referenced to GND (ground=0V); for test circuit see Figure8Symbol Parameter Conditions−40°C to +85°C−40°C to +125°C UnitMin Max Min MaxC L = 5 pFt PHL, t PLH propagation delayA to Y see Figure6V CC = 1.1 V to 1.3 V 2.613.2 2.614.5ns V CC = 1.4 V to 1.6 V 2.08.2 2.09.0ns V CC = 1.65 V to 1.95 V 1.7 6.5 1.77.2ns V CC = 2.3 V to 2.7 V 1.5 5.0 1.5 5.5ns V CC = 3.0 V to 3.6 V 1.5 4.4 1.5 4.9nst PZH, t PZL3-state outputenable timeOE to Y see Figure7V CC = 1.1 V to 1.3 V 2.916.2 2.917.9ns V CC = 1.4 V to 1.6 V 2.28.9 2.29.8ns V CC = 1.65 V to 1.95 V 1.7 6.8 1.77.5ns V CC = 2.3 V to 2.7 V 1.4 4.8 1.4 5.3ns V CC = 3.0 V to 3.6 V 1.2 4.0 1.2 4.4nst PHZ, t PLZ3-state outputdisable timeOE to Y see Figure7V CC = 1.1 V to 1.3 V 2.97.7 2.98.5ns V CC = 1.4 V to 1.6 V 2.2 5.6 2.2 6.2ns V CC = 1.65 V to 1.95 V 1.7 5.4 1.7 6.0ns V CC = 2.3 V to 2.7 V 1.4 4.2 1.4 4.7ns V CC = 3.0 V to 3.6 V 1.2 4.7 1.2 5.2nsC L = 10 pFt PHL, t PLH propagation delayA to Y see Figure6V CC = 1.1 V to 1.3 V 3.015.4 3.017.0ns V CC = 1.4 V to 1.6 V 1.99.5 1.910.5ns V CC = 1.65 V to 1.95 V 1.77.6 1.78.4ns V CC = 2.3 V to 2.7 V 1.6 5.9 1.6 6.5ns V CC = 3.0 V to 3.6 V 1.6 5.3 1.6 5.9nst PZH, t PZL3-state outputenable timeOE to Y see Figure7V CC = 1.1 V to 1.3 V 3.318.1 3.320.0ns V CC = 1.4 V to 1.6 V 2.110.0 2.111.0ns V CC = 1.65 V to 1.95 V 1.77.8 1.78.6ns V CC = 2.3 V to 2.7 V 1.4 5.6 1.4 6.2ns V CC = 3.0 V to 3.6 V 1.3 4.9 1.3 5.4nst PHZ, t PLZ3-state outputdisable timeOE to Y see Figure7V CC = 1.1 V to 1.3 V 3.39.4 3.310.4ns V CC = 1.4 V to 1.6 V 2.1 6.9 2.17.6ns V CC = 1.65 V to 1.95 V 1.77.0 1.77.7ns V CC = 2.3 V to 2.7 V 1.4 5.3 1.4 5.9ns V CC = 3.0 V to 3.6 V 1.3 6.6 1.37.3nsC L = 15 pFt PHL, t PLH propagation delayA to Y see Figure6V CC = 1.1 V to 1.3 V 3.417.5 3.419.3ns V CC = 1.4 V to 1.6 V 2.510.8 2.511.9ns V CC = 1.65 V to 1.95 V 2.08.6 2.09.5ns V CC = 2.3 V to 2.7 V 1.8 6.7 1.87.4ns V CC = 3.0 V to 3.6 V 1.8 6.1 1.8 6.8nst PZH, t PZL3-state outputenable timeOE to Y see Figure7V CC = 1.1 V to 1.3 V 3.719.9 3.721.9ns V CC = 1.4 V to 1.6 V 2.511.1 2.512.3ns V CC = 1.65 V to 1.95 V 2.08.6 2.09.5ns V CC = 2.3 V to 2.7 V 1.7 6.3 1.77.0ns V CC = 3.0 V to 3.6 V 1.5 5.6 1.5 6.2nst PHZ, t PLZ3-state outputdisable timeOE to Y see Figure7V CC = 1.1 V to 1.3 V 3.711.0 3.712.1ns V CC = 1.4 V to 1.6 V 2.58.1 2.59.0ns V CC = 1.65 V to 1.95 V 2.08.6 2.09.5ns V CC = 2.3 V to 2.7 V 1.7 6.5 1.77.2ns V CC = 3.0 V to 3.6 V 1.58.5 1.59.4nsC L = 30 pFt PHL, t PLH propagation delayA to Y see Figure6V CC = 1.1 V to 1.3 V 4.423.5 4.425.9ns V CC = 1.4 V to 1.6 V 3.014.2 3.015.7ns V CC = 1.65 V to 1.95 V 2.611.3 2.612.5ns V CC = 2.3 V to 2.7 V 2.58.8 2.59.7ns V CC = 3.0 V to 3.6 V 2.58.1 2.59.0nst PZH, t PZL3-state outputenable timeOE to Y see Figure7V CC = 1.1 V to 1.3 V 4.725.2 4.727.8ns V CC = 1.4 V to 1.6 V 3.014.1 3.015.6ns V CC = 1.65 V to 1.95 V 2.611.0 2.612.1ns V CC = 2.3 V to 2.7 V 2.38.4 2.39.3ns V CC = 3.0 V to 3.6 V 2.27.6 2.28.4nst PHZ, t PLZ3-state outputdisable timeOE to Y see Figure7V CC = 1.1 V to 1.3 V 4.716.5 4.718.2ns V CC = 1.4 V to 1.6 V 3.011.9 3.013.1ns V CC = 1.65 V to 1.95 V 2.613.5 2.614.9ns V CC = 2.3 V to 2.7 V 2.310.0 2.311.0ns V CC = 3.0 V to 3.6 V 2.214.1 2.215.6nsTable 10:Dynamic characteristics …continuedVoltages are referenced to GND (ground=0V); for test circuit see Figure8Symbol Parameter Conditions−40°C to +85°C−40°C to +125°C UnitMin Max Min Max13.WaveformsMeasurement points are given in Table 11.Logic levels: V OL and V OH are typical output voltage drop that occur with the output load.Fig 6.The data input (A) to output (Y) propagation delays Table 11:Measurement pointsSupply voltageOutput Input V CCV M V M V I t r = t f 0.8 V to 3.6 V0.5× V CC0.5× V CCV CC≤ 3.0 nsMeasurement points are given in Table 12.Logic levels: V OL and V OH are typical output voltage drop that occur with the output load.Fig 7.Turn-on and turn-off times001aad070A inputY outputt PLHt PHLGNDV IV MV Mmna646t PLZt PHZoutput disabledoutput enabledV YV Xoutput enabledoutput LOW-to-OFF OFF-to-LOWoutput HIGH-to-OFF OFF-to-HIGHOE inputV IV CCV OLV OHV MGNDGNDt PZLt PZHV MV M[1]For measuring enable and disable times R L =5k Ω,for measuring propagation delays,setup and hold times and pulse width R L = 1 M Ω.Table 12:Measurement pointsSupply voltage Input Output V CCV M V M V XV Y0.8 V to 1.6 V 0.5× V CC 0.5× V CC V OL +0.1V V OH −0.1V 1.65 V to 2.7 V 0.5× V CC 0.5× V CC V OL +0.15V V OH −0.15V 3.0 V to 3.6 V0.5× V CC0.5× V CCV OL +0.3VV OH −0.3VTest data is given in T able 13.Deﬁnitions for test circuit:R L = Load resistorC L = Load capacitance including jig and probe capacitanceR T =Termination resistance should be equal to the output impedance Z o of the pulse generatorFig 8.Load circuitry for switching times Table 13:Test dataSupply voltageLoad V EXT V CCC LR L[1]t PLH , t PHLt PZH , t PHZ t PZL , t PLZ 0.8 V to 3.6 V5 pF , 10 pF ,15pF and 30 pF5 k Ω or 1 M Ωopen GND2× V CC001aac521PULSE GENERATORDUTR TV I V OV EXTV CC R L5 k ΩC L14.Package outlineFig 9.Package outline SOT353-1 (TSSOP5)UNIT A 1A max.A 2A 3b p L H E L p w y v c e D (1)E (1)Z (1)θ REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDEC JEITA mm0.101.00.80.300.150.250.082.251.851.351.150.65e 11.32.252.00.600.157°0°0.10.10.30.425DIMENSIONS (mm are the original dimensions)Note1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.0.460.21SOT353-1MO-203SC-88A00-09-0103-02-19w Mb pD Zee 10.151354θAA 2A 1L p (A 3)detail XLH EE cv M AXAy1.5 3 mm0scaleTSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mmSOT353-11.1Fig 10.Package outline SOT886 (XSON6)terminal 1index areaREFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDEC JEITASOT886MO-252SOT88604-07-1504-07-22DIMENSIONS (mm are the original dimensions)XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm DEe 1eA 1bLL 1e 11 2 mmscaleNotes1. Including plating thickness.2. Can be visible in some manufacturing processes.UNIT mm0.250.171.51.40.350.27A 1max b E 1.050.95D e e 1L 0.400.32L 10.50.6A (1)max 0.50.041625346×(2)4×(2)A15.AbbreviationsTable 14:AbbreviationsAcronym DescriptionCMOS Complementary Metal Oxide SemiconductorTTL T ransistor T ransistor LogicHBM Human Body ModelESD ElectroStatic DischargeMM Machine ModelCDM Charged Device Model16.Revision historyTable 15:Revision historyDocument ID Release date Data sheet status Change notice Doc. number Supersedes 74AUP1G126_120050725Product data sheet-9397 750 14686-17.Data sheet status[1]Please consult the most recently issued data sheet before initiating or completing a design.[2]The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL .[3]For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.18.DeﬁnitionsShort-form speciﬁcation —The data in a short-form speciﬁcation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device.These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.19.DisclaimersLife support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductorscustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’),relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes noresponsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to theseproducts,and makes no representations or warranties that these products are free from patent,copyright,or mask work right infringement,unless otherwise speciﬁed.20.TrademarksNotice —All referenced brands, product names, service names and trademarks are the property of their respective owners.21.Contact informationFor additional information, please visit: For sales ofﬁce addresses, send an email to: sales.addresses@Level Data sheet status [1]Product status [2][3]DeﬁnitionI Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips Semiconductors reserves the right to change the speciﬁcation in any manner without notice.IIPreliminary dataQualiﬁcationThis data sheet contains data from the preliminary speciﬁcation.Supplementary data will be published at a later date.Philips Semiconductors reserves the right to change the speciﬁcation without notice,in order to improve the design and supply the best possible product.III Product data ProductionThis data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to make changes at any time in order to improve the design,manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).。

74V1G126资料

74V1G126SINGLE BUS BUFFER (3-STATE)PRELIMINARY DATAOctober 1999s HIGH SPEED:t PD =3.8ns (TYP.)at V CC =5V sLOW POWER DISSIPATION:I CC =1µA (MAX.)at T A =25o C sHIGH NOISE IMMUNITY:V NIH =V NIL =28%V CC (MIN.)s POWER DOWN PROTECTION ON INPUTS sSYMMETRICAL OUTPUT IMPEDANCE:|I OH |=I OL =8mA (MIN)sBALANCED PROPAGATION DELAYS:t PLH ≅t PHLsOPERATING VOLTAGERANGE:V CC (OPR)=2V to 5.5VsIMPROVED LATCH-UP IMMUNITYDESCRIPTIONThe 74V1G125is an advanced high-speed CMOS SINGLE BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C 2MOS technology.3-STATE control input G has to be set LOW toplace the output into the high impedance state.Power down protection is provided on all inputs and 0to 7V can be accepted on inputs with no regard to the supply voltage.This device can be used to interface 5V to 3V.PIN CONNECTION AND IEC LOGIC SYMBOLS®S(SOT23-5L)C (SC-70)ORDER CODE:74V1G126S 74V1G126C1/8INPUT EQUIVALENT CIRCUITABSOLUTE MAXIMUM RATINGSSymbol ParameterValue Unit V CC Supply Voltage -0.5to +7.0V V I DC Input Voltage -0.5to +7.0V V O DC Output Voltage -0.5to V CC +0.5V I IK DC Input Diode Current -20mA I OK DC Output Diode Current ±20mA I O DC Output Current ±25mA I CC or I GND DC V CC or Ground Current±50mAT stg Storage Temperature -65to +150o C T LLead Temperature (10sec)260oCAbsolute Maximum Ratingsarethose values beyond which dam age to the device may occur.Functional operation un der these condition is not implied.TRUTH TABLEA G Y X L Z L H L HHHX:”H”or ”L”Z:High ImpedancePIN DESCRIPTIONPIN NoSYMBOLNAME AND FUNCTION 11G Output Enable Input 21A Data Input 41Y Data Output 3GND Ground (0V)5V CCPositive Supply VoltageRECOMMENDED OPERATING CONDITIONSSymbol ParameterValue Unit V CC Supply Voltage 2.0to 5.5V V I Input Voltage 0to 5.5V V O Output Voltage 0to V CC VT op Operating Temperature-40to +85oCdt/dvInput Rise and Fall Time (see note 1)(V CC =3.3±0.3V)(V CC =5.0±0.5V)0to 1000to 20ns/V ns/V1)V IN from 30%to70%of V CC74V1G1262/8DC SPECIFICATIONSSymbolParameterTest Conditions ValueUnitV CC (V)T A =25oC -40to 85oC Min.Typ.Max.Min.Max.V IH High Level Input Voltage 2.0 1.5 1.5V 3.0to 5.50.7V CC0.7V CCV IL Low Level Input Voltage2.00.50.5V3.0to 5.50.3V CC0.3V CC V OHHigh Level Output Voltage2.0I O =-50µA 1.9 2.0 1.9V3.0I O =-50µA 2.9 3.0 2.94.5I O =-50µA 4.4 4.54.43.0I O =-4mA 2.58 2.484.5I O =-8mA 3.943.8V OLLow Level Output Voltage2.0I O =50µA 0.00.10.1V3.0I O =50µA 0.00.10.14.5I O =50µA 0.00.10.13.0I O =4mA 0.360.444.5I O =8mA 0.360.44I OZHigh Impedance Output Leakage Current5.5V I =V IH or V IL V O =V CC or GND ±0.25±2.5µAI I Input Leakage Current 0to 5.5V I =5.5V or GND ±0.1±1.0µA I CCQuiescent Supply Current5.5V I =V CC or GND110µAAC ELECTRICAL CHARACTERISTICS (Input t r =t f =3ns)SymbolParameterTest Condition ValueUnitV CC (V)CL (pF)T A =25oC-40to 85oCMin.Typ.Max.Min.Max.t PLH t PHL Propagation Delay Time3.3(*)15 5.68.01.09.5ns3.3(*)508.111.5 1.013.05.0(**)15 3.8 5.5 1.0 6.55.0(**)50 5.37.5 1.08.5t PLZ t PHZOutput Disable Time3.3(*)15R L =1K Ω7.09.7 1.011.5ns3.3(*)509.513.2 1.015.05.0(**)154.6 6.8 1.08.05.0(**)506.18.8 1.010.0t PZL t PZHOutput Enable Time3.3(*)15R L =1K Ω 5.48.0 1.09.5ns3.3(*)507.911.5 1.013.05.0(**)15 3.6 5.1 1.0 6.05.0(**)505.17.11.08.0(*)Voltag e range is 3.3V ±0.3V (**)Voltage range is 5V ±0.5V74V1G1263/874V1G126CAPACITIVE CHARACTERISTICSSymbol Parameter Test Conditions Value UnitT A=25o C-40to85o CMin.Typ.Max.Min.Max.C IN Input Capacitance41010pFC OUT Output Capacitance10pF14pFC PD Power DissipationCapacitance(note1)1)C PD isdefined as the value of the IC’sinternal equiva lent capacitance which is calculated fromthe operating current consumption without load.(Referto Test Circuit).Average operting curren t can be obtained bythe followingequa tion.I CC(opr)=C PD•V CC•f IN+I CCTEST CIRCUITTEST SWITCHt PLH,t PHL Opent PZL,t PLZ V CCt PZH,t PHZ GNDC L=15/50pF or equ ivalent(includes jigand probe capacitance)R L=R1=1KΩorequivalentR T=Z OU T of pulse generator(typ ically50Ω)4/874V1G126 WAVEFORM1:PROPAGATION DELAYS(f=1MHz;50%duty cycle)WAVEFORM2:OUTPUT ENABLE AND DISABLE TIME(f=1MHz;50%duty cycle)5/8DIM.mmmils MIN.TYP.MAX.MIN.TYP.MAX.A 0.90 1.4535.457.1A10.000.150.0 5.9A20.90 1.3035.451.2b 0.350.5013.719.7C 0.090.20 3.57.8D 2.80 3.00110.2118.1E 2.60 3.00102.3118.1E1 1.50 1.7559.068.8L 0.350.5513.721.6e 0.9537.4e11.974.8SOT23-5L MECHANICAL DATA74V1G1266/8DIM.mmmils MIN.TYP.MAX.MIN.TYP.MAX.A 0.80 1.1031.543.3A10.000.100.0 3.9A20.80 1.0031.539.4b 0.150.30 5.911.8C 0.100.18 3.97.1D 1.80 2.2070.986.6E 1.80 2.4070.994.5E1 1.15 1.3545.353.1L 0.100.303.911.8e 0.6525.6e11.351.2SC-70MECHANICAL DATA74V1G1267/874V1G126Information furnished is believed to be accurate and reliable.However,STMicroelectroni c s assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectroni c s.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all informati o n previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics©1999STMicroelectronics–Printed in Italy–All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia-Brazil-China-Finland-France-Germany-Hong Kong-India-Italy-Japan-Malaysia-Malta-MoroccoSingapore-Spain-Sweden-Switzerland-United Kingdom-U.S.A..8/8。

HD74AC126T中文资料

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself.Renesas Technology Home Page: Renesas Technology Corp.Customer Support Dept.April 1, 2003CautionsKeep safety first in your circuit designs!1. Renesas Technology Corporation puts the maximum effort into making semiconductor products betterand more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.Notes regarding these materials1. These materials are intended as a reference to assist our customers in the selection of the RenesasTechnology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party.2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of anythird-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.3. All information contained in these materials, including product data, diagrams, charts, programs andalgorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. 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Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from theinformation contained herein.5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a deviceor system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce inwhole or in part these materials.7. 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EditionSep. 2000 DescriptionThe HD74AC126/HD74ACT126 is an quad buffer and line driver designed to be employed as a memory address driver, clock driver and bus oriented transmitter/receiver which provides improved PC board density.Features• 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers• Outputs Source/Sink 24 mA• HD74ACT126 has TTL-Compatible InputsPin ArrangementHD74AC126/HD74ACT1262Logic SymbolPin NamesD Data InputsE 3-State Output Enable Inputs (Active High)OOutputsTruth TableInputs E D Output H L L H H H L XZH :High Voltage Level L :Low Voltage Level X :ImmaterialZ:High ImpedanceDC Characteristics (unless otherwise specified)ItemSymbol Max Unit ConditionMaximum Quiescent Supply Current I CC 80µA V IN = V CC or ground, V CC = 5.5 V,Ta = Worst caseMaximum Quiescent Supply Current I CC 8.0µA V IN = V CC or ground, V CC = 5.5 V,Ta = 25°CMaximum I CC /Input (HD74ACT126)I CCT1.5mAV IN = V CC – 2.1 V, V CC = 5.5 V Ta = Worst caseHD74AC126/HD74ACT1263AC Characteristics: HD74AC126Ta = +25°C C L = 50 pFTa = –40°C to +85°C C L = 50 pF ItemSymbol V CC (V)*1Min Typ Max Min Max Unit Propagation Delay t PLH 3.3 1.0 6.59.0 1.010.0ns5.0 1.0 5.57.0 1.07.5Propagation Delay t PHL 3.3 1.06.59.0 1.010.05.0 1.0 5.07.0 1.07.5Enable Time t ZH 3.3 1.0 6.512.5 1.013.05.0 1.0 5.59.0 1.09.5Enable Time t ZL 3.3 1.07.012.0 1.013.05.0 1.0 5.59.0 1.09.5Disable Time t HZ 3.3 1.08.012.0 1.012.55.0 1.0 6.510.0 1.010.5Disable Time t LZ3.3 1.07.012.5 1.013.55.01.06.010.01.010.5Note:1.Voltage Range 3.3 is 3.3 V ± 0.3 VVoltage Range 5.0 is 5.0 V ± 0.5 VAC Characteristics: HD74ACT125Ta = +25°C C L = 50 pFTa = –40°C to +85°C C L = 50 pF ItemSymbol V CC (V)*1Min Typ Max Min Max Unit Propagation Delay t PLH 5.0 1.0 6.59.0 1.010.0nsPropagation Delay t PHL 5.0 1.07.09.0 1.010.0Enable Time t ZH 5.0 1.0 6.09.0 1.010.0Enable Time t ZL 5.0 1.07.010.0 1.011.0Disable Time t HZ 5.0 1.08.010.5 1.011.5Disable Time t LZ5.01.07.010.51.011.5Note:1.Voltage Range 5.0 is 5.0 V ± 0.5 VCapacitanceItemSymbol Typ Unit Condition Input CapacitanceC IN 4.5pF V CC = 5.5 V Power Dissipation CapacitanceC PD45.0pFV CC = 5.0 VHD74AC126/HD74ACT126 Package Dimensions4HD74AC126/HD74ACT1265HD74AC126/HD74ACT1266Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright © Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.Hitachi Asia Ltd. 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74AHC1G126和74AHCT1G126高速Si-门CMOS芯片说明书

1. General description74AHC1G126 and 74AHCT1G126 are high-speed Si-gate CMOS devices. They provideone non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input pin (OE). A LOW at pin OE causes the output to assume a high-impedance OFF-state.The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.2. Features and benefits⏹Symmetrical output impedance ⏹High noise immunity ⏹Low power dissipation⏹Balanced propagation delays ⏹Multiple package options ⏹ESD protection:◆HBM JESD22-A114F: exceeds 2000V ◆MM JESD22-A115-A: exceeds 200 V ◆CDM JESD22-C101E: exceeds 1000V ⏹Specified from -40︒C to +125︒C3. Ordering information74AHC1G126; 74AHCT1G126Bus buffer/line driver; 3-stateRev. 8 — 23 August 2012Product data sheetTable 1.Ordering informationType numberPackageTemperature rangeName DescriptionVersion 74AHC1G126GW -40 ︒C to +125 ︒CTSSOP5plastic thin shrink small outline package; 5leads; body width 1.25mmSOT353-174AHCT1G126GW 74AHC1G126GV -40 ︒C to +125 ︒CSC-74Aplastic surface-mounted package; 5 leadsSOT75374AHCT1G126GV 74AHC1G126GM -40 ︒C to +125 ︒CXSON6plastic extremely thin small outline package; noleads; 6 terminals; body 1 ⨯ 1.45 ⨯ 0.5 mm SOT88674AHCT1G126GM 74AHC1G126GF -40 ︒C to +125 ︒CXSON6plastic extremely thin small outline package; no leads; 6 terminals; body 1⨯1⨯0.5mmSOT89174AHCT1G126GF4. MarkingTable 2.Marking codesType number Marking[1]74AHC1G126GW AN74AHCT1G126GW CN74AHC1G126GV A2674AHCT1G126GV C2674AHC1G126GM AN74AHCT1G126GM CN74AHC1G126GF AN74AHCT1G126GF CN[1]The pin 1 indicator is located on the lower left corner of the device, below the marking code.5. Functional diagram6. Pinning information6.1Pinning6.2Pin descriptionTable 3.Pin descriptionSymbol Pin DescriptionSOT353-1/SOT753SOT886/SOT891OE11output enable inputA22data input AGND33ground (0 V)Y44data output Yn.c.-5not connectedV CC56supply voltage7. Functional descriptionTable 4.Function tableH = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-stateInput OutputOE A YH L LH H HL X Z8. Limiting valuesTable 5.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit V CC supply voltage-0.5+7.0VV I input voltage-0.5+7.0VI IK input clamping current V I < -0.5 V[1]-20-mAI OK output clamping current V O < -0.5V or V O>V CC+0.5V[1]-±20mAI O output current-0.5 V < V O<V CC+0.5V-±25mAI CC supply current-75mAI GND ground current-75-mAT stg storage temperature-65+150︒CP tot total power dissipation T amb = -40︒C to+125 ︒C[2]-250mW[1]The input and output voltage ratings may be exceeded if the input and output current ratings are observed.[2]For TSSOP5 and SC-74A packages: above 87.5︒C the value of P tot derates linearly with 4.0mW/K.For XSON6 packages: above 118︒C the value of P tot derates linearly with 7.8mW/K.9. Recommended operating conditions10. Static characteristicsTable 6.Recommended operating conditions Voltages are referenced to GND (ground = 0 V).Symbol Parameter Conditions74AHC1G12674AHCT1G126UnitMin Typ Max Min Typ Max V CC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5V V I input voltage 0- 5.50- 5.5V V O output voltage 0-V CC 0-V CC V T amb ambient temperature -40+25+125-40+25+125︒C ∆t/∆Vinput transition rise and fall rateV CC = 3.3 V ± 0.3 V --100---ns/V V CC = 5.0 V ± 0.5 V --20--20ns/V Table 7.Static characteristicsVoltages are referenced to GND (ground = 0 V).Symbol Parameter Conditions25 ︒C -40︒C to +85 ︒C -40︒C to +125 ︒C Unit MinTypMaxMinMaxMinMax74AHC1G126V IHHIGH-level input voltageV CC = 2.0 V 1.5-- 1.5- 1.5-V V CC = 3.0 V 2.1-- 2.1- 2.1-V V CC = 5.5 V3.85-- 3.85- 3.85-V V ILLOW-level input voltageV CC = 2.0 V --0.5-0.5-0.5V V CC = 3.0 V --0.9-0.9-0.9V V CC = 5.5 V-- 1.65- 1.65- 1.65V V OHHIGH-level output voltage V I = V IH or V IL I O = -50μA; V CC =2.0 V1.92.0- 1.9- 1.9-V I O = -50μA; V CC =3.0 V 2.9 3.0- 2.9- 2.9-V I O = -50μA; V CC =4.5 V4.44.5- 4.4- 4.4-V I O = -4.0mA; V CC =3.0 V 2.58-- 2.48- 2.40-V I O = -8.0mA; V CC =4.5 V 3.94-- 3.8- 3.70-V V OLLOW-level output voltage V I = V IH or V IL I O = 50μA; V CC =2.0 V-00.1-0.1-0.1V I O = 50μA; V CC =3.0 V -00.1-0.1-0.1V I O = 50μA; V CC =4.5 V -00.1-0.1-0.1V I O = 4.0mA; V CC =3.0 V --0.36-0.44-0.55V I O = 8.0mA; V CC =4.5 V--0.36-0.44-0.55V I OZ OFF-state output current V I = V IH or V IL ; V O = V CC or GND; V CC =5.5V --±0.25-±2.5-±10μA I I input leakage current V I =5.5V or GND; V CC =0V to 5.5V --0.1- 1.0- 2.0μA I CCsupply current V I =V CC or GND; I O = 0 A;V CC =5.5 V-- 2.0-20-40μA11. Dynamic characteristicsC Iinputcapacitance -310-10-10pF74AHCT1G126V IH HIGH-level input voltage V CC = 4.5 V to 5.5 V 2.0-- 2.0- 2.0-V V IL LOW-level input voltageV CC = 4.5 V to 5.5 V --0.8-0.8-0.8VV OHHIGH-level output voltage V I = V IH or V IL ; V CC =4.5 V I O = -50μA4.4 4.5- 4.4- 4.4-V I O = -8.0mA3.94-- 3.8- 3.70-V V OLLOW-level output voltage V I = V IH or V IL ; V CC =4.5 V I O = 50μA-00.1-0.1-0.1V I O = 8.0mA--0.36-0.44-0.55V I OZ OFF-state output current V I = V IH or V IL ; V O = V CC or GND; V CC =5.5V --±0.25-±2.5-±10μA I I input leakage current V I =5.5V or GND; V CC =0V to 5.5V --0.1- 1.0- 2.0μA I CC supply current V I =V CC or GND; I O = 0 A;V CC =5.5 V-- 2.0-20-40μA ∆I CCadditional supply current per input pin; V I =V CC -2.1V;other inputs at V CC or GND; I O =0 A;V CC =4.5V to 5.5V --1.35-1.5-1.5mAC Iinputcapacitance-310-10-10pFTable 7.Static characteristics …continued Voltages are referenced to GND (ground = 0 V).Symbol Parameter Conditions25 ︒C -40︒C to +85 ︒C -40︒C to +125 ︒C Unit Min Typ Max MinMax MinMaxTable 8.Dynamic characteristics GND = 0 V; For test circuit see Figure 9.Symbol Parameter Conditions25 ︒C -40︒C to +85 ︒C -40︒C to +125 ︒C Unit MinTypMaxMinMaxMinMax74AHC1G126t pdpropagation delay A to Y;see Figure 7[1]V CC = 3.0 V to 3.6 V[2]C L =15pF - 4.48.0 1.09.5 1.010.0ns C L =50pF - 6.311.5 1.013.0 1.014.5ns V CC = 4.5 V to 5.5 V [3]C L =15pF - 3.4 5.5 1.0 6.5 1.07.0ns C L =50pF-4.77.51.08.51.09.5nst enenable timeOE to Y; see Figure 8[1]V CC = 3.0 V to 3.6 V [2]C L =15pF - 4.98.0 1.09.5 1.010.0ns C L =50pF -7.011.5 1.013.0 1.014.5ns V CC = 4.5 V to 5.5 V [3]C L =15pF - 3.6 5.6 1.0 6.3 1.07.0ns C L =50pF-5.48.01.09.01.09.5nst disdisable time OE to Y; see Figure 8[1]V CC = 3.0 V to 3.6 V [2]C L =15pF - 6.39.7 1.011.5 1.012.5ns C L =50pF -9.013.2 1.015.0 1.016.5ns V CC = 4.5 V to 5.5 V [3]C L =15pF - 4.3 6.8 1.08.0 1.08.5ns C L =50pF- 6.18.8 1.010.01.011.0ns C PDpower dissipation capacitanceper buffer;C L =50pF;f =1 MHz; V I =GND to V CC[4]-9-----pF74AHCT1G126t pdpropagation delay A to Y;see Figure 7[1]V CC = 4.5 V to 5.5 V[3]C L =15pF - 3.4 5.5 1.0 6.5 1.07.0ns C L =50pF-4.77.51.08.51.09.5nst enenable timeOE to Y; see Figure 8[1]V CC = 4.5 V to 5.5 V [3]C L =15pF - 3.4 5.6 1.0 6.3 1.0 6.5ns C L =50pF-4.88.01.09.01.09.0nst disdisable time OE to Y; see Figure 8[1]V CC = 4.5 V to 5.5 V [3]C L =15pF 4.0 6.8 1.08.0 1.08.5ns C L =50pF5.78.81.010.01.011.5nsTable 8.Dynamic characteristics …continued GND = 0 V; For test circuit see Figure 9.Symbol Parameter Conditions25 ︒C -40︒C to +85 ︒C -40︒C to +125 ︒C Unit MinTypMaxMinMaxMinMax[1]t pd is the same as t PLH and t PHL .t en is the same as t PZL and t PZH .t dis is the same as t PLZ and t PHZ .[2]Typical values are measured at V CC = 3.3 V.[3]Typical values are measured at V CC = 5.0 V.[4]C PD is used to determine the dynamic power dissipation P D (μW).P D =C PD ⨯V CC 2⨯f i +∑(C L ⨯V CC 2⨯f o )where:f i =input frequency in MHz;f o =output frequency in MHz;C L =output load capacitance in pF;V CC =supply voltage in Volts.12. WaveformsC PDpower dissipation capacitanceper buffer;C L =50pF;f =1 MHz; V I =GND to V CC[4]-11-----pFTable 8.Dynamic characteristics …continued GND = 0 V; For test circuit see Figure 9.Symbol Parameter Conditions25 ︒C -40︒C to +85 ︒C -40︒C to +125 ︒C Unit MinTyp Max Min Max Min MaxTable 9.Measurement pointsType Input OutputV M V I V M74AHC1G1260.5 ⨯V CC GND to V CC0.5 ⨯V CC 74AHCT1G126 1.5V GND to 3.0 V0.5 ⨯V CCTable 10.Test dataType Input Load S1 positionV I t r, t f C L R L t PHL, t PLH t PZH, t PHZ t PZL, t PLZ 74AHC1G126V CC≤ 3ns15 pF, 50 pF 1 kΩopen GND V CC74AHCT1G1263V≤ 3ns15 pF, 50 pF 1 kΩopen GND V CC13. Package outlineTSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1Fig 10.Package outline SOT353-1 (TSSOP5)Plastic surface-mounted package; 5 leads SOT753Fig 11.Package outline SOT753 (SC-74A)Fig 12.Package outline SOT886 (XSON6)Fig 13.Package outline SOT891 (XSON6)14. AbbreviationsTable 11.AbbreviationsAcronym DescriptionCMOS Complementary Metal Oxide SemiconductorCDM Charged Device ModelDUT Device Under TestESD ElectroStatic DischargeHBM Human Body ModelMM Machine ModelTTL Transistor-Transistor Logic15. Revision historyTable 12.Revision historyDocument ID Release date Data sheet status Change notice Supersedes74AHC_AHCT1G126 v.820120823Product data sheet-74AHC_AHCT1G126 v.7 Modifications:•Package outline drawing of SOT886 (Figure12) modified.74AHC_AHCT1G126 v.720090617Product data sheet-74AHC_AHCT1G126 v.6 74AHC_AHCT1G126 v.620070525Product data sheet-74AHC_AHCT1G126 v.5 74AHC_AHCT1G126 v.520070514Product data sheet-74AHC_AHCT1G126 v.4 74AHC_AHCT1G126 v.420020606Product specification-74AHC_AHCT1G126 v.3 74AHC_AHCT1G126 v.320020215Product specification-74AHC_AHCT1G126 v.2 74AHC_AHCT1G126 v.220010406Product specification-74AHC1G_AHCT1G126 v.1 74AHC1G_AHCT1G126 v.119990920Product specification--16. 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Export might require a prior authorization from competent authorities.Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified,the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use ofnon-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of theproduct for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies Nexperia for anyliability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’sstandard warranty and Nexperia’s product specifications.Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.16.4 TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.17. Contact informationFor more information, please visit: For sales office addresses, please send an email to: ***************************18. Contents1 General description. . . . . . . . . . . . . . . . . . . . . . 12 Features and benefits . . . . . . . . . . . . . . . . . . . . 13 Ordering information. . . . . . . . . . . . . . . . . . . . . 14 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 26 Pinning information. . . . . . . . . . . . . . . . . . . . . . 26.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 37 Functional description . . . . . . . . . . . . . . . . . . . 38 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 39 Recommended operating conditions. . . . . . . . 410 Static characteristics. . . . . . . . . . . . . . . . . . . . . 411 Dynamic characteristics . . . . . . . . . . . . . . . . . . 512 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 713 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 1014 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 1415 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 1416 Legal information. . . . . . . . . . . . . . . . . . . . . . . 1516.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 1516.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1516.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 1516.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1617 Contact information. . . . . . . . . . . . . . . . . . . . . 1618 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17© Nexperia B.V. 2017. All rights reserved For more information, please visit: Forsalesofficeaddresses,pleasesendanemailto:*************************** Date of release:。

HD74LV1G08A中文资料

Ta = –40 to 85°C
Unit t
FROM
TO (Output) Y
Min 1.0 1.0
Max 7.0 9.0 ns
Conditions (Input) CL = 15 pF CL = 50 pF A or B
Operating Characteristics
• CL = 50 pF
I IN I CC I OFF
0 to 5.5 5.5 0 3.3
Input capacitance CIN
Note: For conditions shown as Min or Max, use the appropriate values under recommended operating conditions.
Features
• The basic gate function is lined up as hitachi uni logic series. • Supplied on emboss taping for high speed automatic mounting. • Electrical characteristics equivalent to the HD74LV08A Supply voltage range : 1.65 to 5.5 V Operating temperature range : –40 to +85°C • All inputs VIH (Max.) = 5.5 V (@VCC = 0 V to 5.5 V) All outputs VO (Max.) = 5.5 V (@VCC = 0 V) • Output current ±6 mA (@VCC = 3.0 V to 3.6 V), ±12 mA (@VCC = 4.5 V to 5.5 V) • All the logical input has hysteresis voltage for the slow transition.

HD74LV1GT126A资料

HD74LV1GT126ABus Buffer Gate with 3–state Output /CMOS Logic Level ShifterREJ03D0124-0900Rev.9.00Mar 21, 2008 DescriptionThe HD74LV1GT126A has a bus buffer gate with 3–state output in a 5 pin package. Output is disabled when the associated output enable (OE) input is low. To ensure the high impedance state during power up or power down, OE should be connected to V CC through a pull-down resistor; the minimum value of the resistor is determined by the current sourcing capability of the driver. The input protection circuitry on this device allows over voltage tolerance on the input, allowing the device to be used as a logic–level translator from 3.0 V CMOS Logic to 5.0 V CMOS Logic or from 1.8 V CMOS logic to 3.0 V CMOS Logic while operating at the high-voltage power supply. Low voltage and high-speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power consumption extends the battery life.Features• The basic gate function is lined up as Renesas uni logic series.• Supplied on emboss taping for high-speed automatic mounting.• TTL compatible input level.Supply voltage range : 3.0 to 5.5 VOperating temperature range : –40 to +85°C• Logic-level translate function3.0 V CMOS logic → 5.0 V CMOS logic (@V CC = 5.0 V)1.8 V or2.5 V CMOS logic →3.3 V CMOS logic (@V CC = 3.3 V)• All inputs V IH (Max.) = 5.5 V (@V CC = 0 V to 5.5 V)All outputs V O (Max.) = 5.5 V (@V CC = 0 V, Output : Z)• Output current ±6 mA (@V CC = 3.0 V to 3.6 V), ±12 mA (@V CC = 4.5 V to 5.5 V)• All the logical input has hysteresis voltage for the slow transition.• Ordering InformationPart Name Package TypePackage Code(Previous Code)PackageAbbreviationTaping Abbreviation(Quantity)HD74LV1GT126ACME CMPAK–5pin PTSP0005ZC-A(CMPAK-5V)CM E (3000 pcs/reel)HD74LV1GT126AVSE VSON–5pin PUSN0005KA-A(TNP-5DV)VS E (3000 pcs/reel)Note: Please consult the sales office for the above package availability.Outline and Article IndicationFunction TableInputsOutput YOE AH H HH L LL X Z H : High levelL : Low levelX : ImmaterialZ : High impedancePin ArrangementAbsolute Maximum RatingsItem Symbol Ratings Unit Test ConditionsSupply voltage range V CC –0.5 to 7.0 V Input voltage range *1 V I–0.5 to 7.0 V –0.5 to V CC + 0.5 Output : H or LOutput voltage range *1, 2 V O –0.5 to 7.0 VV CC : OFF or Output : ZInput clamp current I IK –20 mA V I < 0 Output clamp currentI OK ±50 mA V O < 0 or V O > V CC Continuous output current I O ±25 mA V O = 0 to V CC Continuous current through V CC or GNDI CC or I GND ±50 mAMaximum power dissipationat Ta = 25°C (in still air) *3P T 200 mW Storage temperature Tstg–65 to 150°CNotes: The absolute maximum ratings are values, which must not individually be exceeded, and furthermore no twoof which may be realized at the same time.1. The input and output voltage ratings may be exceeded if the input and output clamp-current ratings areobserved.2. This value is limited to 5.5 V maximum.3. The maximum package power dissipation was calculated using a junction temperature of 150°C.Recommended Operating ConditionsItem Symbol Min Max Unit ConditionsSupply voltage range V CC 3.0 5.5 V Input voltage range V I 0 5.5 V0 V CCOutput voltage range V O 0 5.5 VOutput : Z — 6 V CC = 3.0 to 3.6 VI OH — 12 mAV CC = 4.5 to 5.5 V— –6 V CC = 3.0 to 3.6 VOutput currentI OL — –12 mAV CC = 4.5 to 5.5 V 0 100 V CC = 3.0 to 3.6 VInput transition rise or fall rate ∆t / ∆v 0 20 ns / VV CC = 4.5 to 5.5 VOperating free-air temperature T a –40 85 °C Note: Unused or floating inputs must be held high or low.• Ta = –40 to 85°CItem Symbol V CC (V) * Min Typ Max Unit Test condition3.0 to 3.6 1.5 — —V IH4.5 to5.5 2.0 — —3.0 to 3.6 — — 0.6Input voltage V IL4.5 to5.5 — — 0.8V3.3 — 0.10 —Hysteresis voltage V H 5.0 — 0.15 — V V T + – V T –Min to Max V CC –0.1— — I OH = –50 µA3.0 2.48 — — I OH = –6 mAV OH 4.5 3.8 — — I OH = –12 mAMin to Max — — 0.1 I OL = 50 µA3.0 — — 0.44 I OL = 6 mAOutput voltage V OL 4.5 — — 0.55 VI OL = 12 mAInput current I IN 0 to 5.5 — — ±1 µA V IN = 5.5 V or GND Off state output current I OZMin to Max—±5—µA V O = 5.5 V or GNDQuiescent supply current I CC 5.5 — — 10µA V IN = V CC or GND, I O = 0∆I CC 5.5 — — 1.5 mAOne input V IN = 3.4 V,other input V CC or GNDOutput leakage current I OFF 0 — — 5 µA V IN or V O = 0 to 5.5 V Input capacitanceC IN 5.0 — 3.0 — pF V IN = V CC or GNDNote: For conditions shown as Min or Max, use the appropriate values under recommended operating conditions.Switching Characteristics• V CC = 3.3 ± 0.3 VTa = 25°C Ta = –40 to 85°C Item Symbol Min Typ Max Min MaxUnitTestConditions FROM (Input) TO(Output)— 5.0 9.0 1.0 10.5 C L = 15 pF Propagation delay time t PLHt PHL — 6.5 11.5 1.0 13.0 nsC L = 50 pFA Y — 5.0 9.0 1.0 10.5 C L = 15 pF Enable timet ZHt ZL — 6.5 11.5 1.0 13.0 ns C L = 50 pFOE Y — 4.5 10.0 1.0 11.5 C L = 15 pF Disable timet HZt LZ — 6.0 13.5 1.0 15.0 ns C L = 50 pF OE Y• V CC = 5.0 ± 0.5 VTa = 25°C Ta = –40 to 85°C Item Symbol Min Typ Max Min MaxUnitTestConditions FROM (Input) TO(Output)— 3.5 5.5 1.0 6.5 C L = 15 pF Propagation delay time t PLHt PHL — 4.6 7.5 1.0 8.5 nsC L = 50 pFA Y — 3.6 5.1 1.0 6.0 C L = 15 pF Enable timet ZHt ZL — 4.6 7.1 1.0 8.0 ns C L = 50 pFOE Y — 3.3 6.8 1.0 8.0 C L = 15 pF Disable timet HZt LZ — 4.3 8.8 1.0 10.0 ns C L = 50 pF OE Y• C L = 50 pFTa = 25°CItem Symbol V CC (V)Min Typ Max Unit Test ConditionsPower dissipationcapacitance C PD5.0—11.5—pFf = 10 MHzTest CircuitWaveformsPackage DimensionsRefer to "/en/network " for the latest and detailed information.Renesas Technology America, Inc.450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501Renesas Technology Europe LimitedDukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900Renesas Technology (Shanghai) Co., Ltd.Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898Renesas Technology Hong Kong Ltd.7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473Renesas Technology Taiwan Co., Ltd.10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399Renesas Technology Singapore Pte. Ltd.1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001Renesas Technology Korea Co., Ltd.Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145Renesas Technology Malaysia Sdn. BhdUnit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510RENESAS SALES OFFICES。

74LVC1Gxx系列：单栅极逻辑产品

ＭＳ１业电压降低至１４．Ｖ。在１８．Ｖ的情况下，该系列比标准ＬＣ到第一级潮湿敏感度（Ｌ）界标准，所采用的材料不ＶＲＨＳ。产品的开关速度提高了３％。两个产品系列均拥有５５含铅，并符合电子产品有害物质管制规定（ｏ）０．Ｖ
月度新品总汇＿—● 月度新
７Ｌｘ系列：极逻辑产品４ＶＣ１Ｇｘ单栅
Ｄｉｅｏｓ公司推出７ＬＣ１ｘ系列单栅极逻辑产品，ｄ４ＶＧｘ
Ｓ＿３Ｍ０ＳＦＴ０Ｔ２Ｅ系列：率ＭＯＳＥ功ＦＴ
Ｉ司推出全新ＨＥＦＴ功率ＭＯＳＥＲ公ＸＥＦＴ系列。该器
即可替代占位至少２．ｍｍ０８的多个分立器件解决方案。
ＥＦ２ＭＩ０ＦＭＩ０一Ｃ７３采用意法半导体ＰＴ（酸铅）制程，Ｚ钛接口器件全部制作在一颗芯片上，小的空间内获得高电容值，让产品设计人员更自由地优化滤波器的电特性。
其ＩＦ输出电路可保证在器件掉电时输出被禁用，ＯＦ
从而防止破坏性的回流电流进入器件或载入共享信号线。
Ｄｉｏｄｅｗｗｗ．ｏｄｅｃｓｄｉｓ．ｏｍ
ＩｔｒａｉｎＩｃｉｅｎｅｎｔａ。Ｒｅｔｉｒｆ
ｃｍＤ
衄
ＥＭＩＯＣ０Ｆ：Ｓ９３双晶体管、双ＭＯＳＦＴ及ＥＦ２ＭＩ７３麦克风接口芯片ＯＴ６：瞬态电压抑制器ＳＴ推出一款全新麦克风接口芯片ＥＦ２ＭＩ０Ｆ。ＭＩ０一Ｃ７３

HD74LVC125A资料

HD74LVC125AQuad. Bus Buffer Gates with 3-state OutputsADE-205-108B(Z)3rd EditionDecember 1996 DescriptionThe HD74LVC125A has four bus buffer gates in a 14 pin package. The device require the three state control input C to be taken high to put the output into the high impedance condition, whereas the device requires the control input to be low to put the output into high impedance. Low voltage and high speed operation is suitable at the battery drive product (note type personal computer) and low power consumption extends the life of a battery for long time operation.Features• V CC = 2.0 V to 5.5 V• All inputs V IH (Max.) = 5.5 V (@V CC = 0 V to 5.5 V)• All outputs V OUT (Max.) = 5.5 V (@V CC = 0 V or output off state)• Typical V OL ground bounce < 0.8 V (@V CC = 3.3 V, Ta = 25°C)• Typical V OH undershoot > 2.0 V (@V CC = 3.3 V, Ta = 25°C)• High output current ±24 mA (@V CC = 3.0 V to 5.5 V)Function TableInputsC A Outputs YH X ZL L LL H HH :High levelL :Low levelX :ImmaterialZ :High impedanceHD74LVC125A2Pin ArrangementAbsolute Maximum RatingsItemSymbol Ratings Unit ConditionsSupply voltage V CC –0.5 to 6.0V Input diode current I IK –50mA V I = –0.5 V Input voltage V I –0.5 to 6.0V Output diode current I OK –50mA V O = –0.5 V 50mA V O = V CC +0.5 V Output voltage V O –0.5 to V CC +0.5V Output "H" or "L"–0.5 to 6.0V Output "Z" or V CC :OFF Output current I O±50mA V CC , GND current / pin I CC or I GND 100mA Storage temperatureTstg–65 to +150°CNote:The absolute maximum ratings are values which must not individually be exceeded, and furthermore,no two of which may be realized at the same time.HD74LVC125A3Recommended Operating ConditionsItemSymbol Ratings Unit Conditions Supply voltage V CC 1.5 to 5.5V Data hold 2.0 to 5.5V At operation Input / output voltageV I 0 to 5.5V C, AV O0 to V CC V Output "H" or "L"0 to 5.5V Output "Z" or V CC :OFFOperating temperature Ta –40 to 85°C Output currentI OH –12mA V CC = 2.7 V –24*2mA V CC = 3.0 V to 5.5 V I OL12mA V CC = 2.7 V 24*2mA V CC = 3.0 V to 5.5 V Input rise / fall time *1t r , t f10ns/VNotes: 1.This item guarantees maximum limit when one input switches.Waveform : Refer to test circuit of switching characteristics.2.duty cycle ≤ 50%HD74LVC125A4Electrical CharacteristicsTa = –40 to 85°CItem Symbol V CC (V)MinMax Unit Test ConditionsInput voltageV IH 2.7 to 3.62.0—V 4.5 to 5.5V CC ×0.7—V V IL2.7 to3.6—0.8V 4.5 to 5.5—V CC ×0.3V Output voltageV OH2.7 to 5.5V CC –0.2—V I OH = –100 µA 2.7 2.2—V I OH = –12 mA 3.0 2.4—V 3.0 2.2—V I OH = –24 mA 4.53.8—V V OL2.7 to 5.5—0.2V I OL = 100 µA 2.7—0.4V I OL = 12 mA 3.0—0.55V I OL = 24 mA 4.5—0.55V Input currentI IN 0 to 5.5—±5.0µA V IN = 5.5 V CC GND Off state output currentI IOZ2.7 to 5.5—±5.0µA V IN = V CC , GND V OUT = 5.5 V or GNDOutput leak currentI OFF—20µA V IN / V OUT = 5.5 V Quiescent supply current I CC2.7 to3.6—±10µA V IN / V OUT = 3.6 to 5.5 V 2.7 to 5.5—10µA V IN = V CC or GND∆I CC3.0 to 3.6—500µAV IN = one input at (V CC –0.6) V,other inputs at V CC or GNDHD74LVC125A5Switching CharacteristicsTa = –40 to 85°CItemSymbol V CC (V)Min Typ Max Unit From (Input)To (Output)Propagation delay timet PLH 2.7—— 6.5ns AYt PHL3.3±0.3 1.5— 6.0ns 5.0±0.5—— 5.0ns Output enable timet ZH 2.7——8.0ns CYt ZL3.3±0.3 1.5—7.0ns 5.0±0.5—— 6.0ns Output disable timet HZ 2.7—— 6.5ns CYt LZ3.3±0.3 1.5— 5.5ns 5.0±0.5——4.5ns Between output pins skew *1t OSLH2.7———ns t OSHL3.3±0.3—— 1.0ns 5.0±0.5—— 1.0ns Input capacitance C IN 2.7— 3.0—pF Output capacitance C O2.7—15.0—pFNote:1.This parameter is characterized but not tested.tos LH = | t PLHm - t PLHn |, tos HL = | t PHLm - t PHLn |HD74LVC125A Test Circuit6HD74LVC125A Waveforms – 1Waveforms – 27Hitachi Code JEDEC EIAJWeight (reference value)TTP-14D ——0.05 gUnit: mm*Dimension including the plating thicknessBase material dimension元器件交易网Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。

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Rev.1, Jul. 2001, page 5 of 13
HD74ALVC1G126
Switching Characteristics
(Ta = −40 to 85°C) • VCC = 1.2 V
Symbol tPLH tPHL tZH tZL tHZ tLZ Min Typ 5.5 6.0 4.5 Max Unit ns ns ns Test conditions CL = 15 pF CL = 15 pF CL = 15 pF FROM (Input) A OE OE TO (Output) Y Y Y
Rev.1, Jul. 2001, page 3 of 13
HD74ALVC1G126
Recommended Operating Conditions
Item Supply voltage range Input voltage range Output voltage range Output current Symbol VCC VI VO IOH Min 1.2 0 0 IOL Input transition rise or fall rate ∆t / ∆v Ta 0 0 Operating free-air temperature −40 Note: Unused or floating inputs must be held high or low. Max 3.6 3.6 VCC −2 −4 −6 −18 −24 2 4 6 18 24 20 10 85 °C ns / V Unit V V V mA VCC = 1.2 V VCC = 1.4 V VCC = 1.65 V VCC = 2.3 V VCC = 3.0 V VCC = 1.2 V VCC = 1.4 V VCC = 1.65 V VCC = 2.3 V VCC = 3.0 V VCC = 1.2 to 2.7 V VCC = 3.3±0.3 V Conditions
Item Propagation delay time Enable time Disable time
Rev.1, Jul. 2001, page 6 of 13
HD74ALVC1G126
Switching Characteristics (cont)
Unit V
Test conditions
VCC×0.75
V
IOH = −100 µA IOH = −2 mA IOH = −4 mA IOH = −6 mA IOH = −18 mA IOH = −24 mA IOL = 100 µA IOL = 2 mA IOL = 4 mA IOL = 6 mA IOL = 18 mA IOL = 24 mA
Package type VSON-5 pin Package code TNP-5D Package suffix VS Taping code E (3,000 pcs / Reel)
HD74ALVC1G126
Outline and Article Indication
• HD74ALVC10.7 1.7 2.0 VCC−0.2 0.9 1.1 1.2 1.7 2.2
Typ 4.0
Max VCC×0.25 VCC×0.3 VCC×0.3 0.7 0.8 0.2 0.3 0.3 0.3 0.55 0.55 ±5 ±5 10 5
Ratings −0.5 to 4.6 −0.5 to 4.6 −0.5 to VCC+0.5 −0.5 to 4.6 −50 ±50 ±50 ±100 200 −65 to 150
Unit V V V
Conditions
Output voltage range
Output : H or L or Z VCC : OFF
Item Propagation delay time Enable time Disable time
•
VCC = 1.5±0.1 V
Symbol tPLH tPHL tZH tZL tHZ tLZ Min 2.0 2.0 2.0 Typ Max 7.0 7.0 7.0 Unit ns ns ns Test conditions CL = 15 pF CL = 15 pF CL = 15 pF FROM (Input) A OE OE TO (Output) Y Y Y
µA µA µA µA pF
VIN = 3.6 V or GND VO = VCC or GND VIN = VCC or GND, IO = 0 VIN or VO = 0 to 3.6 V VIN = VCC or GND
Note: For conditions shown as Min or Max, use the appropriate values under recommended operating conditions.
HD74ALVC1G126
Bus Buffer Gate with 3-state Output
ADE-205-618A (Z) Rev. 1 July 2001 Description
The HD74ALVC1G126 has a bus buffer gate with 3-state output in a 5 pin package. Output is disabled when the associated output enable (OE) input is low. To ensure the high impedance state during power up or power down, OE should be connected to GND through a pull-down resistor; the minimum value of the resistor is determined by the current souring capability of the driver. Low voltage and high speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power consumption extends the battery life.
mA mA mA mA mW °C
VI < 0 VO < 0 or VO > VCC VO = 0 to VCC
The absolute maximum ratings are values which must not individually be exceeded, and furthermore, no two of which may be realized at the same time. 1. The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. 2. This value is limited to 4.6 V maximum. 3. The maximum package power dissipation was calculated using a junction temperature of 150°C.
Input clamp current Output clamp current Continuous output current Continuous current through VCC or GND Maximum power dissipation *3 at Ta = 25°C (in still air) Storage temperature Notes:
Item Propagation delay time Enable time Disable time
•
VCC = 1.8±0.15 V
Symbol tPLH tPHL tZH tZL tHZ tLZ Min 1.5 1.5 1.5 Typ Max 5.0 5.0 5.0 Unit ns ns ns Test conditions CL = 30 pF CL = 30 pF CL = 30 pF FROM (Input) A OE OE TO (Output) Y Y Y
Features
• The basic gate function is lined up as hitachi uni logic series. • Supplied on emboss taping for high speed automatic mounting. • Supply voltage range : 1.2 to 3.6 V Operating temperature range : −40 to +85°C • All inputs VIH (Max.) = 3.6 V (@VCC = 0 V to 3.6 V) All outputs VO (Max.) = 3.6 V (@VCC = 0 V) • Output current ±2 mA (@VCC = 1.2 V) ±4 mA (@VCC = 1.4 V to 1.6 V) ±6 mA (@VCC = 1.65 V to 1.95 V) ±18 mA (@VCC = 2.3 V to 2.7 V) ±24 mA (@VCC = 3.0 V to 3.6 V) • Package type
Marking
A
C
VSON-5
= Control code