fdt3612

TA=25oC unless otherwise noted
Parameter
Ratings
100 ±20
(Note 1a)
Units
V V A W
3.7 20 3.0 1.3 1.1 –55 to +150
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
FDT3612
March 2001
FDT3612
100V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDT3612 Rev. C1 (W)
FDT3612
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 3.7A VDS = 40V 8 CAPACITANCE (pF) 60V 80V
12
8 TA = 125oC 4 -55oC 0 2 2.5 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V) 25oC
0
0.2
0.4
ห้องสมุดไป่ตู้0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
VDD = 50 V, VGS = 10 V,
ID = 1 A, RGEN = 6 Ω
8.5 2 23 4.5
17 4 37 9 20
ns ns ns ns nC nC nC
VDS = 50 V, VGS = 10 V
ID = 3.7 A,
14 2.4 3.8
Drain–Source Diode Characteristics and Maximum Ratings
20 IS, REVERSE DRAIN CURRENT (A) VDS = 10V ID, DRAIN CURRENT (A) 16
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 1 0.1 -55oC 0.01 0.001 0.0001 TA = 125oC 25oC
Symbol
W DSS IAR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Test Conditions
Single Pulse, VDD = 50 V, ID= 3.7 A
2
2.5 –6 88 94 170
4
V mV/°C
120 130 245
mΩ
ID(on) gFS
10 11
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 3.7 A ID = 3.5 A VGS = 6 V, VGS = 10 V, ID = 3.7A, TJ = 125°C VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 3.7 A
a) 42°C/W when mounted on a 1in2 pad of 2 oz copper
b) 95°C/W when mounted on a .0066 2 in pad of 2 oz copper
c) 110°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
ID = 1.9 A 0.3
0.2
TA = 125oC TA = 25oC
0.1
125
150
0 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
FDT3612 Rev. C1 (W)
FDT3612
Typical Characteristics
20 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 16 5.0V
1.8
1.6 VGS = 4.0V 4.5V 5.0V 6.0V
0.4 RDS(ON), ON-RESISTANCE (OHM)
2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100
o
ID = 3.7A VGS = 10V
Min
Typ
Max Units
90 3.7 mJ A
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
(Note 2)
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 80 V, VGS = 20 V, VGS = –20 V, VGS = 0 V VDS = 0 V VDS = 0 V
100 106 10 100 –100
V mV/°C µA nA nA
(Note 2)
VDS = 50 V, f = 1.0 MHz
V GS = 0 V,
632 40 20
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
Features
• 3.7 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V RDS(ON) = 130 mΩ @ VGS = 6 V • Fast switching speed • Low gate charge (14nC typ) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability in a widely used surface mount package
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A