IRFP246资料

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BVDSS VGS = 0V, ID = 250µA (Figure 10)
250
-
-
V
IRFP246, IRFP247
275
-
-
V
Gate to Threshold Voltage Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2) IRFP244, IRFP246
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . Tpkg
550 -55 to 150
-
-
±100 nA
-
0.20 0.28

IRFP245, IRFP247
-
0.24 0.34

Forward Transconductance (Note 2)
gfs
VDS ≥ 50V, ID = 10A (Figure 12)
6.7
11
-
S
Turn-On Delay Time Rise Time Turn-Off Delay Time
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
±20
±20
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . PD
150
150
150
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage IRFP244, IRFP245
元器件交易网
Semiconductor
July 1998
IRFP244, IRFP245, IRFP246, IRFP247
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
Features
Qgd
-
20
-
nC
5-2
元器件交易网
IRFP244, IRFP245, IRFP246, IRFP247
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
D
Measured from The
LD
Source Lead, 6mm
(0.25in) from the
G
HeaderBiblioteka to the SourceLS
Bonding Pad S
Junction to Case Junction to Ambient
TO-247
IRFP247
NOTE: When ordering, include the entire part number.
D G
S
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
2.0
-
4.0
V
-
-
25
µA
-
-
250
µA
15
-
-
A
IRFP245, IRFP247
14
-
-
A
Gate to Source Leakage Drain to Source On Resistance (Note 2)
IRFP244, IRFP246
IGSS rDS(ON)
VGS = ±20V VGS = 10V, ID = 10A (Figures 8, 9)
Copyright © Harris Corporation 1998
5-1
File Number 2211.2
元器件交易网
IRFP244, IRFP245, IRFP246, IRFP247
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
VGS(TH) IDSS
ID(ON)
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS TJ =
= 0.8 x 125oC
Rated
BVDSS
,
VGS
=
0V
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)
9.7
8.8
9.7
8.8
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM
60
56
60
56
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
• 15A and 14A, 275V and 250V • rDS(ON) = 0.28Ω and 0.34Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 275V, 250VDC Rated, 120VAC Line System Operation • Related Literature
300 260
550 -55 to 150
300 260
550 -55 to 150
300 260
550
mJ
-55 to 150
oC
300
oC
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
250
250
275
275
V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
15
14
15
14
A
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Formerly developmental type TA17423.
Symbol
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP244
TO-247
IRFP244
IRFP245
TO-247
IRFP245
IRFP246
TO-247
IRFP246
IRFP247
IRFP244
IRFP245
IRFP246
IRFP247 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS
250
250
275
275
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . .VDGR
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
Measured fRom the Drain Lead, 6mm (0.25in) From Package to the Center of Die
Modified MOSFET Symbol Showing the Internal Devices Inductances
1.2
1.2
1.2
1.2
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering
td(ON) VDD = 125V, ID ≈ 15A, RG = 9.1Ω, VGS = 10V,
-
RL = 8Ω (Figures 17, 18) MOSFET Switching
tr
Times are Essentially Independent of
-
Operating Temperature
td(OFF)
-
16
24
ns
67 100
ns
53
80
ns
Fall Time
tf
-
49
74
ns
Total Gate Charge (Gate to Source + Gate to Drain)
Gate to Source Charge
Qg(TOT) VGS = 10V, ID = 15A, VDS = 0.8 x Rated
TEST CONDITIONS
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
Internal Source Inductance
CISS COSS CRSS
LD
LS
-
39
59
nC
BVDSS, IG(REF) = 1.5mA (Figures 14, 19, 20)
Gate charge is Essentially Independent of
Qgs
Operating Temperature
-
6.6
-
nC
Gate to Drain “Miller” Charge
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