ONET4201LDRGET资料

FEATURES APPLICATIONS
DESCRIPTION
ONET4201LD
SLLS677–NOVEMBER2005
155-Mbps to4.25-Gbps LASER DRIVER
•SONET/SDH Transmission Systems •Multirate Operation From155Mbps up to4.25
Gbps•Fibre Channel Optical Modules
•Fiber Optic Data Links
•Bias Current Programmable From1mA
to100mA•Digital Cross-Connects
•Optical Transmitters
•Modulation Current Programmable From5mA
to85mA
•APC and Fault Detection
•Fault Mode Selection The ONET4201LD is a laser driver for multiple fiber
optic applications up to 4.25Gbps.The device •Bias and Photodiode Current Monitors
accepts CML input data and provides bias and •CML Data Inputs modulation currents for driving a laser diode.Also
•Temperature Compensation of Modulation provided are automatic power control(APC),
temperature compensation of modulation current, Current
fault detection,and current monitor features.•Single3.3-V Supply
The device is available in a small-footprint,4-mmוActive Back-Termination at the Output
4-mm,24-pin,QFN package.The circuit requires a •Surface-Mount,Small-Footprint,4-mm×
single3.3-V supply.
4-mm,24-Lead QFN Package
This power-efficient laser driver is characterized for
operation from–40°C to85°C.
Please be aware that an important notice concerning availability,standard warranty,and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.Copyright©2005,Texas Instruments Incorporated Products conform to specifications per the terms of the Texas
Instruments standard warranty.Production processing does not
necessarily include testing of all parameters.
DETAILED DESCRIPTION
BLOCK DIAGRAM
B0092-02 VCC
GND
DIN+
DIN–
MOD+
MOD–MODSET
MODTC
BIAS
MONB IBMAX
MONP
PD
APCSET
SDOWN DISABLE
CAPC FLTMODE
ONET4201LD
SLLS677–NOVEMBER2005
These devices have limited built-in ESD protection.The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
A simplified block diagram of the ONET4201LD is shown in Figure1.
This compact,low-power,4.25-Gbps laser driver circuit consists of a high-speed data path and a bias and control block.
The to the input
The bias(APC)to maintain
and for high-speed
The main
Figure1.Simplified Block Diagram of the ONET4201LD
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HIGH-SPEED DATA PATH
BIAS AND
BANDGAP
I PD[A])P
(1)
R APCSET[h
(2)
I BIASMAX
(3)
V MONB[V])R MONB[h]I BIAS[A]
68(4)
ONET4201LD
SLLS677–NOVEMBER2005 DETAILED DESCRIPTION(continued)
The high-speed data path consists of an input buffer stage and a current modulator.
The input buffer stage takes CML compatible differential signals.It provides on-chip50-Ωtermination to VCC. AC-coupling may be used at the DIN+and DIN–inputs.
The laser diode current modulator mainly consists of two common-emitter output transistors and the required driver circuitry.Depending on the input data stream,the modulation current is sunk at the MOD+or the MOD–pin.
Modulation is supervised by the
The laser is85mA.The modulation
For optimum provides active20-Ω
The bias the bias current generator,
The bandgap needed to set bias current,the biasing for all
The in laser threshold current over to the IBMAX and the average laser output be calculated by using the
In reference current I APCSET and external resistor R APCSET
The bias photodiode current.The
This current as in transient fault
An external current(1/68)is mirrored and MONB at MONB is given as:
If the voltage at MONB is greater than the programmed threshold,a fault mode occurs.
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V MONP [V])R MONP [h ] I PD [A](5)
I
MOD [A] (6)
FAULT ONET4201LD
SLLS677–NOVEMBER 2005
DETAILED DESCRIPTION (continued)
The MONP is also provided as a photocurrent monitor output.The photodiode current,I PD ,is mirrored and develops a voltage across an external resistor to ground,R MONP .The voltage at MONP is given as:If the voltage at MONP is greater than the programmed threshold,a fault mode occurs.
As with any negative-feedback system design,care must be taken to assure stability of the loop.The loop bandwidth must not be too high in order to minimize pattern-dependent jitter.The dominant pole is determined by the capacitor C APC .The recommended value for C APC is 200nF.The capacitance of the monitor photodiode C PD adds value for this The and leaving PD open.In The either MOD+or MOD–,I MOD0at a reference current defined by Note that from part to part.To reduce DAC or digital The failure of the APC loop,and helps prevent transient is off,SDOWN is low,and current generator up the current delivered and bias current reach 95%during power on,the The to a low level,(hard-fault output on detection of by toggling V CC .Once If however,the bias and causing condition disappears.A 4
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B0093-01
DISABLE
SDOWN
MONP
MONB VCC
APCSET MODSET MODTC IBMAX
ONET4201LD
SLLS677–NOVEMBER 2005
DETAILED DESCRIPTION (continued)
A fault its causes greater than (short to V CC or GND)and the monitor voltages exceed their programmed threshold (see Table 1).
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PACKAGE
ONET4201LD
SLLS677–NOVEMBER 2005
DETAILED DESCRIPTION (continued)
Table 1.Response to I/O-Pin Shorts to VCC or GND
FLTMODE =LOW
FLTMODE =HIGH
PIN Response to Short to GND Response to Short to V CC Response to Short to GND
Response to Short to V CC
APCSET SDOWN latched high,I BIAS and No fault,I MOD unaffected SDOWN high,I BIAS and I MOD No fault I MOD disabled
unaffected BIAS SDOWN latched high,I MOD No fault,I BIAS goes to zero SDOWN high,I MOD No fault,I MOD unaffected disabled unaffected
CAPC No fault
No fault,I BIAS goes to zero No fault,I MOD unaffected No fault,I BIAS goes to zero DIN+No fault,I MOD disabled No fault No fault,I MOD disabled No fault DIN–No fault,I MOD disabled No fault
No fault,I MOD disabled No fault
DISABLE Normal circuit operation Normal circuit operation Normal circuit operation Normal circuit operation IBMAX SDOWN latched high,I BIAS and SDOWN latched high,I BIAS SDOWN high,I MOD SDOWN high,I MOD unaffected I MOD disabled
and I MOD disabled unaffected MOD+SDOWN latched high,I BIAS and No fault SDOWN high,I BIAS No fault I MOD disabled
unaffected MOD–SDOWN latched high,I BIAS and No fault
SDOWN high,I BIAS No fault
I MOD disabled
unaffected MODSET SDOWN latched high,I BIAS and No fault,disables I MOD SDOWN high,I BIAS No fault,disables I MOD
I MOD disabled
unaffected
MODTC SDOWN latched high,I BIAS and No fault
SDOWN high,I BIAS and I MOD No fault I MOD disabled unaffected MONB No fault SDOWN latched high,I BIAS No fault SDOWN high,I BIAS and I MOD and I MOD disabled
unaffected
MONP No fault
SDOWN latched high,I BIAS No fault
SDOWN high,I BIAS and I MOD and I MOD disabled unaffected OUTPOL No fault,polarity reverses No fault
No fault,polarity reverses No fault
PD No fault,I MOD unaffected No fault,I BIAS goes to zero No fault,I MOD unaffected No fault,I BIAS goes to zero SDOWN
No fault
No fault
No fault
No fault
For the ONET4201LD,a small-footprint,4-mm ×4-mm,24-lead QFN package is used,with a lead pitch of 0,5mm.The pinout is shown in Figure 3.
In order to achieve the required low thermal resistance of about 38K/W,which keeps the maximum junction temperature below 115°C,a good thermal connection of the exposed die pad is mandatory.
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RGE PACKAGE (TOP VIEW)
ONET4201LD
SLLS677–NOVEMBER 2005
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ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
ONET4201LD
SLLS677–NOVEMBER 2005
over operating free-air temperature range (unless otherwise noted)(1)
VALUE
UNIT V CC Supply voltage (2)–0.3to 4V I IBIAS
Current into BIAS
–20to 120mA I IMOD+,I IMOD–Current into MOD+,MOD––20to 120mA I PD
Current into PD
–5to 5mA V DIN+,V DIN–,V DISABLE ,Voltage at DIN+,DIN–,DISABLE,MONB,MONP,FLTMODE,SDOWN (2)
–0.3to 4
V
V MONB ,V MONP ,V FLTMODE ,V SDOWN
V CAPC ,V IBMAX ,V MODSET ,Voltage at CAPC,IBMAX,MODSET,APCSET,MODTC (2)–0.3to 3V V APCSET ,V MODTC V MOD+,V MOD-Voltage at MOD+,MOD–(2)0.6to VCC+1.5
V V BIAS Voltage at BIAS (2)
1to 3.5V ESD rating at all pins except MOD+,MOD–2ESD kV (HBM)
ESD rating at MOD+,MOD-1T J,max Maximum junction temperature 150°C T stg Storage temperature range
–65to 150°C T A Characterized free-air operating temperature range
–40to 85°C T LEAD Lead temperature 1,6mm (1/16inch)from case for 10seconds
260
°C
(1)Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device.These are stress ratings only,and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.(2)
All voltage values are with respect to network ground terminal.
over operating free-air temperature range (unless otherwise noted)
MIN
NOM MAX UNIT V CC Supply voltage
3 3.3
3.6V T A
Operating free-air temperature
–40
85
°C
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DC ELECTRICAL CHARACTERISTICS
ONET4201LD SLLS677–NOVEMBER2005
over recommended operating conditions(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V CC Supply voltage3 3.3 3.6V
I MOD=30mA,I BIAS=20mA(excluding I MOD,I BIAS)32mA
I VCC Supply current
I MOD=60mA,I BIAS=100mA(excluding I MOD,I BIAS)55mA
I BIAS Bias current range100mA
I BIAS-OFF Bias off-current DISABLE=high or hard-fault mode;V BIAS≤3.5V25µA
Bias overshoot During module hot plugging.V CC turn on time must be10%
≤0.8s
Bias current temperature APC open loop–480480ppm/°C
stability
Bias current absolute I BIAS≥1mA–15%15%
accuracy(1)I
BIAS
=1mA,T A=25°C±15%
Bias current monitor gain I BIAS/I MONB68mA/mA
MONB and MONP threshold A fault is never detected for V MONB/P≤1V and a fault1 1.25 1.35V
range always occurs for V MONB/P≥1.35V
PD current monitor gain I PD/I MONP1mA/mA
V ID Differential input signal2001600mVp-p SDOWN output high voltage I OH=100µA sourcing 2.4V
SDOWN output low voltage I OL=1mA sinking0.4V
DISABLE input impedance 4.77.410kΩ
DISABLE input high voltage2V
DISABLE input low voltage0.8V
V PD Monitor diode voltage 1.6V Monitor diode dc current range181500µA (1)Absolute accuracy refers to part-to-part variation.
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AC ELECTRICAL CHARACTERISTICS
ONET4201LD
SLLS677–NOVEMBER 2005
Typical operating condition is at V CC =3.3V,I MOD =30mA,I BIAS =20mA and T A =25°C,over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS
MIN TYP MAX
UNIT Data Rate
4.25Gbps I MOD Modulation current range Current into MOD+/MOD–pin;5
85mA V MOD+,V MOD–≥0.6V
I MOD-OFF
Modulation off-current DISABLE =high or hard-fault occurred
25µA Modulation current stability –600
600
ppm/°C
I MOD =10mA ±40%Modulation current absolute I MOD =50mA ±25%accuracy (1)
I MOD =80mA ±20%R MODTC =3.125k Ω8300Modulation current
ppm/°C temperature compensation (2)
R MODTC =Open
630t r Output rise time (20%to 80%)V MOD+≥1V,V MOD–≥1V,I MOD =30mA 5575ps t f Output fall time (20%to 80%)V MOD+≥1V,V MOD–≥1V,I MOD =30mA
5575ps t OFF
Disable assert time (see Figure 4)
Time from rising edge of DISABLE to when output 0.06
5
µs
currents fall below the maximum limits of I MOD-OFF and I BIAS-OFF
t ON Disable negate time (see Figure 5)Time from falling edge of DISABLE to when output is 200µs 90%of nominal
t INIT Time to initialize From power on or negation of SDOWN using 200µs DISABLE
t FAULT Fault assert time
Time from fault to SDOWN rising edge 3.3
50µs Maximum spike pulse length at DISABLE being 10
µs ignored
t RESET
DISABLE reset (see Figure 6)
Time DISABLE must be high to reset SDOWN
20µs
Output overshoot/undershoot –13.5%
13.5%Random jitter
I MOD =60mA
0.60.9ps RMS 10mA ≤I MOD ≤60mA,with K28.5pattern 1530ps p-p at 4.25Gbps
10mA ≤I MOD ≤60mA,with 223–1PRBS or 1332
ps p-p DJ
Deterministic jitter (3)
equivalent pattern at 2.67Gbps K28.5pattern at 1.06Gbps
5ps p-p 223–1PRBS or equivalent pattern at 155Mbps
10
ps p-p
(1)Absolute accuracy refers to part-to-part variation.
(2)For a given external resistor connected to the MODTC pin,the modulation current temperature compensation will vary due to part-to-part variations.
(3)
Jitter measured at positive edge and negative edge crossing of eye diagram.
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SLLS677–NOVEMBER2005
SLLS677–NOVEMBER2005
SLLS677–NOVEMBER2005
TYPICAL CHARACTERISTICS
S i n g l e -E n d e d O u t p u t V o l t a g e [50m V /D i v ]
G002
S i n g l e -E n d e d O u t p u t V o l t a g e [50m V /D i v ]
Time [100ps/Div]
G003
S i n g l e -E n d e d O u t p u t V o l t a g e [50m V /D i v ]
Time [200ps/Div]
SLLS677–NOVEMBER 2005
Typical operating condition is at V CC =3.3V,I MOD =30mA,I BIAS =20mA and T A =25°C (unless otherwise noted)
ELECTRICAL EYE-DIAGRAM AT 4.25Gbps
ELECTRICAL EYE-DIAGRAM AT 2.125Gbps
WITH K28.5PATTERN,I MOD =30mA
WITH K28.5PATTERN,I MOD =30mA
0.0
0.51.01.52.02.53.0R a n d o m J i t t e r − p s R M S
20304050607080R i s e T i m e a n d F a l l T i m e − p s
SLLS677–NOVEMBER 2005
TYPICAL CHARACTERISTICS (continued)
Typical operating condition is at V CC =3.3V,I MOD =30mA,I BIAS =20mA and T A =25°C (unless otherwise noted)
020406080100120I B I A S − B i a s C u r r e n t − m A
0.0
0.20.40.60.81.01.21.41.61.8I P D − M o n i t o r D i o d e C u r r e n t − m A
SLLS677–NOVEMBER 2005
TYPICAL CHARACTERISTICS (continued)
Typical operating condition is at V CC =3.3V,I MOD =30mA,I BIAS =20mA and T A =25°C (unless otherwise noted)
10
12
14
1618
20B i a s C u r r e n t M o n i t o r G a i n − m A /A
V SDOWN
Time [500 ns/Div]
V DISABLE I MOD+I BIAS ∆t = 2.21 µs
G016
V SDOWN
V DISABLE
I ∆t = 240 µs
G017
V SDOWN
V DISABLE
I MOD+
∆t = 12.8 µs
G018
Time [5 µs/Div]
SLLS677–NOVEMBER 2005
TYPICAL CHARACTERISTICS (continued)
Typical operating condition is at V CC =3.3V,I MOD =30mA,I BIAS =20mA and T A =25°C (unless otherwise noted)
ON
Figure 23.
APPLICATION INFORMATION
S0154-02
DIN+DIN –
MONP MONB
SLLS677–NOVEMBER 2005
Figure 24shows the ONET4201LD connected with a dc-coupled interface to the laser diode,alternatively the APC loop in this case,it is
SELECT A LASER
I PD [A](7)R (8)
R (9)I
MOD [A](10)
I MOD
(11)
I
MOD [A](12)
SLLS677–NOVEMBER 2005
APPLICATION INFORMATION (continued)
In the laser When of the IPD and the The R For the APCSET is
Note APCSET
resistor average optical r e :
Using average optical The where T is the ambient temperature in °C and T 0is the reference temperature (T 0=60°C).
The temperature coefficient of the modulation current TC is typically adjustable between 630ppm/°C and 8300
ppm/°C.
For calculation of the required external resistor R MODSET for a given modulation current and a given temperature,the formula can be modified as follows:
R
MODSET [h ] 265V I MOD
[A]
ƪ
1)TC ƪ
T[o C]*T 0[o C]
ƫƫ
(13)
R MODSET [h ] 265V 36.3mA ƪ1)4000ppm
o C (25o C *60o C )ƫ
6.3k h (14)
TC LD (15)
TC LD (16)R (17)
R (18)
I (19)R (20)
SLLS677–NOVEMBER 2005
If 4000ppm/°C is the desired temperature coefficient and the modulation current from the example above,36.3mA,is required at a temperature of 25°C,the MODSET resistor R MODSET is given by Equation 14.
Note that the modulation current I MOD must not exceed 85mA over the complete temperature range,corresponding to a minimum MODSET resistor R MODSET,MIN =3.1k Ω.
The R to compensate for the TC LD of the laser can T 2as shown in As an =0.2mW/mA.At
coefficient TC LD laser The TC LD in order to R MODTC may be To °C.This The To determined.The
R For the example laser diode,the maximum threshold current is 40mA at 85°C.Therefore,R BIASMAX can be
approximated by Equation 21.
R
BIASMAX 343V 40mA
8.6k h
(21)
SELECT V MONB AND V MONP RANGE
V MONB [V])R MONB [h ] I BIAS [A]68)768h I BIAS [A]68)11.29h I BIAS [A]
(22)V MONP [V])R MONP [h ] I PD [A])200h I PD [A](23)
LASER DIODE INTERFACE
ONET4201LD
SLLS677–NOVEMBER 2005
Monitoring the bias current is achieved by taking the fractional (1/68)bias current and developing a voltage across an external resistor to ground.Equation 22provides the value for V MONB for a resistor value equal to 768Ω.
Monitoring of the photodiode current is achieved by taking a mirror of I PD and developing a voltage across an external resistor to ground.Equation 23provides the value for V MONP for a resistor equal to 200Ω.The output stage of the ONET4201LD is optimized for driving a 20-Ωload.The combination of a damping resistor,R D ,along with the resistance of the laser diode must be 20Ωfor impedance matching.The suggested typical value for R D is 6Ωto 15Ω.A bypass capacitor of 10nF placed close to the laser anode also helps to optimize performance.
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PACKAGING INFORMATION
Orderable Device Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)
Lead/Ball Finish MSL Peak Temp (3)ONET4201LDRGER ACTIVE QFN RGE 243000Green (RoHS &
no Sb/Br)CU NIPDAU Level-2-260C-1YEAR ONET4201LDRGERG4ACTIVE QFN RGE 243000Green (RoHS &
no Sb/Br)CU NIPDAU Level-2-260C-1YEAR ONET4201LDRGET ACTIVE QFN RGE 24250Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR ONET4201LDRGETG4
ACTIVE
QFN
RGE
24
250
Green (RoHS &no Sb/Br)
CU NIPDAU
Level-2-260C-1YEAR
(1)
The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.
LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.
NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.
PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.
(2)
Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS)or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight in homogeneous material)
(3)
MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases
its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
16-Dec-2005
Addendum-Page 1
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