irf650_188027

--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 32 A,
-- 220
--
ns
dIF / dt = 100 A/µs
(Note Байду номын сангаас)
--
1.89
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.15mH, IAS = 28A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 32A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
TL
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
IRF650B
IRFS650B
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
12
V = 40V DS
10 V = 100V
DS
V = 160V
8
DS
6
4
2
※ Note : ID = 32 A
0
0
20
40
200
28
28 *
17.7
17.7 *
112
112
± 30
600
28
15.6
5.5
156
50
1.25
0.4
-55 to +150
300
Thermal Characteristics
Symbol RθJC RθCS RθJA
Parameter Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max
VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125°C
--
--
--
--
IGSSF IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
VGS = 0 V, ID = 250 µA
200 --
ID = 250 µA, Referenced to 25°C -- 0.2
IDSS
Zero Gate Voltage Drain Current
Features
• 28A, 200V, RDS(on) = 0.085Ω @VGS = 10 V • Low gate charge ( typical 95 nC) • Low Crss ( typical 75 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
VGS 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
101
100 10-1
※ Notes : 1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
28
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
112
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 28 A
8000 6000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
4000 2000
Ciss Coss C
rss
※ Notes : 1. VGS = 0 V 2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V] DS
©2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002
Typical Characteristics
ID, Drain Current [A]
DS(ON) R [Ω ], Drain-Source On-Resistance
102 Top :
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 2600 3400 pF
-- 330 430
pF
--
75 100
pF
Switching Characteristics
td(on)
0.4
0.3
V = 10V GS
V = 20V GS
0.2
0.1
※ Note : TJ = 25℃
0.0
0
30
60
90
120
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
--
--
--
--
--
--
10 100 100 -100
V
V/°C
µA µA nA nA
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
V
VGS = 10 V, ID = 14 A
-- 0.071 0.085 Ω
VDS = 40 V, ID = 14 A
(Note 4)
--
25
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
102
101
100 0.2
150℃ 25℃
※ Notes :
1. 2.
2V5G0Sμ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
ID, Drain Current [A]
102
101 150oC 25oC
100
10-1 2
-55oC
※ Notes : 1. V = 40V 2. 25DS0μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
D
G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current - Continuous (TC = 25°C)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100 V, ID = 32 A, RG = 25 Ω
IRF650B / IRFS650B
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ
Figure 5. Capacitance Characteristics
Capacitance [pF]
©2002 Fairchild Semiconductor Corporation
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
-- 30
70
ns
-- 240 490
ns
-- 295 600
ns
(Note 4, 5)
--
195
400
ns
VDS = 160 V, ID = 32 A,
--
95
123
nC
VGS = 10 V
-- 13
--
nC
(Note 4, 5) --
43
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IRF650B / IRFS650B
IRF650B / IRFS650B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
IRF650B 0.8 0.5 62.5
IRFS650B 2.51 -62.5
Units V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Units °C/W °C/W °C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002