Near ultraviolet photocell
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专利名称：Near ultraviolet photocell
发明人：Jeffrey M. Raynor
申请号：US16534056
申请日：20190807
公开号：US10748951B2
公开日：
20200818
专利内容由知识产权出版社提供
专利附图：
摘要：In an embodiment, an image sensor includes a semiconductor substrate, an epitaxial layer disposed over the semiconductor substrate, a first heavily doped region disposed in the epitaxial layer, and a shallow trench isolation region disposed in the epitaxial layer and surrounding the first heavily doped region. The semiconductor
substrate and the epitaxial layer are of a first doping type and the semiconductor substrate is coupled to a reference potential node. The first heavily doped region is of a second doping type opposite to the first doping type. The epitaxial layer, the first heavily doped region, and the shallow trench isolation region are part of a p-n junction photodiode configured to operate in the near ultraviolet region.
申请人：STMicroelectronics (Research & Development) Limited
地址：Marlow, Bucks GB
国籍：GB
代理机构：Slater Matsil, LLP
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