赛米控丹佛斯电子 SEMiX402GAL066HDs 数据表

SEMiX ®
2s
Trench IGBT Modules
SEMiX402GAL066HDs
Features
•Homogeneous Si
•Trench = Trenchgate technology •V CE(sat) with positive temperature coefficient
•UL recognised file no. E63532
Typical Applications*
•Matrix Converter •Resonant Inverter
•Current Source Inverter
Remarks
•Case temperature limited to T C =125°C max.
•Product reliability results are valid for T j =150°C
•For short circuit: Soft R Goff recommended
•Take care of over-voltage caused by stray inductance
Absolute Maximum Ratings Symbol
Conditions Values Unit
IGBT V CES T j =25°C 600V I C T j =175°C
T c =25°C 502A T c =80°C
379A I Cnom 400A I CRM
I CRM = 2xI Cnom 800A V GES -20 (20)
V t psc V CC =360V V GE ≤ 15V V CES ≤ 600V
T j =150°C
6µs T j
-40...175°C Inverse diode I F T j =175°C
T c =25°C 543A T c =80°C 397A I Fnom
400
A I FRM I FRM = 2xI Fnom
800A I FSM t p =10ms, sin 180°, T j =25°C
1800A T j
-40 (175)
°C Freewheeling diode I F T j =175°C
T c =25°C 566A T c =80°C
412A I Fnom 400
A I FRM I FRM = 2xI Fnom
800A I FSM t p =10ms, sin 180°, T j =25°C
1800A T j -40 (175)
°C Module I t(RMS)T terminal =80°C
600A T stg -40...125°C V isol
AC sinus 50Hz, t =1min
4000
V
Characteristics Symbol
Conditions min.typ.max.Unit
IGBT V CE(sat)
I C =400A V GE =15V chiplevel
T j =25°C 1.45 1.85V T j =150°C 1.7 2.1V V CE0
T j =25°C 0.91V T j =150°C
0.850.9V r CE V GE =15V
T j =25°C 1.4 2.1m ΩT j =150°C
2.1
3.0m ΩV GE(th)V GE =V CE , I C =6.4mA 5
5.8
6.5V I CES V GE =0V V CE =600V T j =25°C 0.15
0.45
mA T j =150°C mA C ies V CE =25V V GE =0V
f =1MHz 24.7nF C oes f =1MHz 1.54nF C res f =1MHz
0.73nF Q G V GE =- 8 V...+ 15 V 3200nC R Gint
T j =25°C
1.00Ω
t d(on)V
CC =300V I C
=400A V GE =±15V R G on =4.5ΩR G off =4.5Ω
T j =150°C 150ns t r T j =150°C 125ns E on T j =150°C 22mJ t d(off)T j =150°C 900ns t f T j =150°C 65ns E off
T j =150°C
24
mJ
R th(j-c)per IGBT
0.12
K/W Inverse diode
V F = V EC I F =400A
V GE =0V chip
T j =25°C 1.4 1.60V T j =150°C 1.4
1.6V V F0T j =25°C 0.91 1.1V T j =150°C 0.750.850.95V r F T j =25°C 0.8 1.0 1.3m ΩT j =150°C
1.1
1.4 1.6
m ΩI RRM I F =400A di/dt off =3700A/µs V GE =-8V
V CC =300V
T j =150°C 250A Q rr T j
=150°C
47µC E rr T j =150°C 10
mJ R th(j-c)
per diode
0.15
K/W Freewheeling diode V F = V EC I F =400A
V GE =0V chip
T j =25°C 1.3 1.53V T j =150°C 1.3
1.5V V F0T j =25°C 0.91 1.1V T j =150°C 0.750.850.95V r F T j =25°C 0.70.9 1.1m ΩT j =150°C
1.0
1.2 1.4m ΩI RRM I F =400A di/dt off =3700A/µs V GE =-8V
V CC =300V
T j =150°C 250A Q rr T j
=150°C
47µC E rr T j =150°C 10
mJ R th(j-c)per diode
0.15
K/W Module L CE 18
nH R CC'+EE'res., terminal-chip T C =25°C 0.7m ΩT C =125°C
1m ΩR th(c-s)per module 0.045
K/W
M s to heat sink (M5)
3
5Nm M t to terminals (M6)
2.5
5Nm Nm w
250
g Temperatur Sensor R 100T c =100°C (R 25=5 k Ω)
493 ± 5%ΩB 100/125
R (T)=R 100exp[B 100/125(1/T-1/T 100)]; T[K];
3550 ±2%
K
Characteristics Symbol
Conditions
min.typ.
max.Unit
SEMiX ® 2s
Trench IGBT Modules
SEMiX402GAL066HDs
Features
•Homogeneous Si
•Trench = Trenchgate technology •V CE(sat) with positive temperature coefficient
•UL recognised file no. E63532
Typical Applications*
•Matrix Converter •Resonant Inverter
•Current Source Inverter
Remarks
•Case temperature limited to T C =125°C max.
•Product reliability results are valid for T j =150°C
•For short circuit: Soft R Goff recommended
•Take care of over-voltage caused by stray inductance
Fig. 1: Typ. output characteristic, inclusive R CC'+ EE'Fig. 2: Rated current vs. temperature I C = f (T C )
Fig. 3: Typ. turn-on /-off energy = f (I C )Fig. 4: Typ. turn-on /-off energy = f (R G )
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
Fig. 7: Typ. switching times vs. I C Fig. 8: Typ. switching times vs. gate resistor R G
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. R CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.。