AOD4187中文资料
常用稳压管型号
经常使用稳压型号参数查询之蔡仲巾千创作DZ是稳压管的电器编号,1N4148就是一个0.6V的稳压管,下面是稳压管上的编号对应的稳压值,有些小的稳压管也会在管体上直接标稳压电压,如5V6就是5.6V的稳压管.美标稳压二极管型号：HITACHI(日立)：HITACHI(日立)0.5W稳压二极管型号参数稳压HZ3A1 2.5~2.7VHZ3A2 2.6~2.8VHZ3A3 2.6~2.9VHZ3B1 2.8~3.0VHZ3B2 2.9~3.1VHZ3B3 3.0~3.2V线性稳压器件(输入输出电流相等,压降3V以上)型号稳压(V) 最年夜输出电流可替代型号79L05 -5V 100mA79L06 -6V 100mA79L08 -8V 100mALM7805 5V 1A L7805,LM340T5LM7806 6V 1A L7806LM7808 8V 1A L7808LM7809 9V 1A L7809LM7812 12V 1A L7812,LM340T12LM7815 15V 1A L7815,LM340T15LM7818 18V 1A L7815LM7824 24V 1A L7824LM7905 -5V 1A L7905LM7906 -6V 1A L7906,KA7906LM7908 -8V 1A L7908LM7909 -9V 1A L7909LM7912 -12V 1A L7912LM7915 -15V 1A L7915LM7918 -18V 1A L7918LM7924 -24V 1A L792478L05 5V 100mA78L06 6V 100mA78L08 8V 100ma78L09 9V 100ma78L12 12V 100ma78L15 15V 100ma78L18 18V 100ma78L24 24V 100ma开关稳压器件(电压转换效率高)型号说明最年夜输出电流LM1575T-3.3 3.3V简易开关电源稳压器1ALM1575T-5.0 5V简易开关电源稳压器1ALM1575T-12 12V简易开关电源稳压器1ALM1575T-15 15V简易开关电源稳压器1ALM1575T-ADJ 简易开关电源稳压器(可调1.23V~37V) 1ALM1575HVT-3.3 3.3V简易开关电源稳压器1ALM1575HVT-5.0 5V简易开关电源稳压器1ALM1575HVT-12 12V简易开关电源稳压器1ALM1575HVT-15 15V简易开关电源稳压器1ALM1575HVT-ADJ 简易开关电源稳压器(可调1.23V~37V) 1ALM2575T-3.3 3.3V简易开关电源稳压器1ALM2575T-5.0 5V简易开关电源稳压器1ALM2575T-12 12V简易开关电源稳压器1ALM2575T-15 15V简易开关电源稳压器1ALM2575T-ADJ 简易开关电源稳压器(可调1.23V~ 37V) 1ALM2575HVT-3.3 3.3V简易开关电源稳压器1ALM2575HVT-5.0 5V简易开关电源稳压器1ALM2575HVT-12 12V简易开关电源稳压器1ALM2575HVT-15 15V简易开关电源稳压器1ALM2575HVT-ADJ 简易开关电源稳压器(可调1.23V~37V) 1ALM2576T-3.3 3.3V简易开关电源稳压器3ALM2576T-5.0 5.0V简易开关电源稳压器3ALM2576T-12 12V简易开关电源稳压器3ALM2576T-15 15V简易开关电源稳压器3ALM2576T-ADJ 简易开关电源稳压器(可调1.23V~37V) 3ALM2576HVT-3.3 3.3V简易开关电源稳压器3ALM2576HVT-5.0 5.0V简易开关电源稳压器3ALM2576HVT-12 12V简易开关电源稳压器3ALM2576HVT-15 15V简易开关电源稳压器3ALM2576HVT-ADJ 简易开关电源稳压器(可调1.23V~37V) 3A。
丹东华奥电子有限公司LD42794汽车半导体说明书
丹东华奥电子有限公司描述LD42794集成电路（类似TLE42794）设计用于建立5V 恒定电压，在负载电流为100mA 时的压差不超过0.5V ，主要用于电子设备的电源。
IC 具有过温关断时的内部最大负载电流限制。
该IC 设计用于汽车应用。
特性订货信息●输出电流范围为100μA 至-100mA ，输入电压范围为6至18V 时，输出电压精度为2％；●在高达45V 的输入电压范围内，输出电压精度为4％；●输出负载电流高达-150mA ；●输入电压范围5.7V 至45.0V ；●低电流消耗；●低压降；●重置功能；●检测（早期预警）；●可调整的复位门限；●内置热保护；●通过实施电流限制实现短路保护，并具有内部集成的过温关断功能；●反极性至-42V 容差；●适用于汽车电子；●芯片的工作温度范围为-40至+125°C ；●ESD 级别是2000V 。
封装说明SOP8管装，编带，无铅低压差固定电压调节器具有汽车电子特殊要求的附加功能QSI SO GNDIRO DRADJLD42794管脚分布图表1：管脚描述（SOP8）丹东华奥电子有限公司参考电流和饱和控制整理控制单元参考图1–集成电路方框图注：A1–逻辑元素A2,A3,A5–缓冲区A4–误差放大器G1–复位振荡器R1–R3-电阻VT1–VT4–晶体管丹东华奥电子有限公司丹东华奥电子有限公司注：1缩写：-U D–复位延迟电压(连接管脚4)；-C1–电容连接到复位信号延迟输出(连接管脚4)；丹东华奥电子有限公司--R1–电阻连接到管脚8。
2表中电流数值前面的符号«-»仅指示其方向（漏极电流）。
*环境温度参考参数：IC温度升高时的关闭温度T j,sd OFF,o C,min./max.=151/200;温度滞后T j,sdh OFF,o C,min./max.=5/30IC工作说明●IC包含：●控制放大器；●参考电压单元；●控制元件；●控制单元；●复位振荡器；●复位门限调节单元；●早期预警单元（检测）；●温度感应器；●晶体管电流和饱和控制电路。
SUP57N20-33_08中文资料
Vishay SiliconixSUP57N20-33N-Channel 200-V (D-S) 175 °C MOSFETFEATURES•TrenchFET ® Power MOSFET •175 °C Junction TemperatureAPPLICATIONS•Isolated DC/DC converters- Primary-Side SwitchPRODUCT SUMMARYV(BR)DSS (V)r DS(on) (Ω)I D (A)2000.033 at V GS = 10 V57Notes:a. Duty cycle ≤ 1 %.b. See SOA curve for voltage derating.c. When Mounted on 1" square PCB (FR-4 material).* Pb containing terminations are not RoHS compliant, exemptions may apply.ABSOLUTE MAXIMUM RATINGS T C = 25°C, unless otherwise notedParameterSymbol Limit Unit Drain-Source Voltage V DS 200VGate-Source VoltageV GS± 20Continuous Drain Current (T J = 175 °C)T C = 25 °C I D 57AT C = 125 °C33Pulsed Drain Current I DM 140Avalanche CurrentI AS35Single Pulse Avalanche Energy a L = 0.1 mH E AS 61mJ Maximum Power DissipationaT C = 25 °C P D 300b W T A = 25 °C c3.75Operating Junction and Storage T emperature RangeT J , T stg- 55 to 175°CTHERMAL RESISTANCE RATINGSParameterSymbol Limit Unit Junction-to-Ambient (PCB Mount)c R thJA 40°C/WJunction-to-Case (Drain)R thJC0.5Vishay SiliconixSUP57N20-33Notes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b. Guaranteed by design, not subject to production testing.c. Independent of operating temperature.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SPECIFICATIONS T J = 25°C, unless otherwise notedParameter Symbol Test Conditions Min Typ Max UnitStaticDrain-Source Breakdown Voltage V (BR)DSS V DS = 0 V , I D = 250 µA 200V Gate-Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 24Gate-Body LeakageI GSS V DS = 0 V, V GS = ± 20 V ± 100nAZero Gate Voltage Drain Current I DSS V DS = 160 V , V GS = 0 V 1µA V DS = 160 V, V GS = 0 V , T J = 125 °C 50V DS = 160 V, V GS = 0 V , T J = 175 °C250On-State Drain Current aI D(on) V DS ≥ 5 V , V GS = 10 V 120A Drain-Source On-State Resistance a r DS(on) V GS = 10 V, I D = 30 A 0.0270.033ΩV GS = 10 V, I D = 30 A, T J = 125 °C 0.069V GS = 10 V, I D = 30 A, T J = 175 °C0.093Forward T ransconductance a g fsV DS = 15 V , I D = 30 A25S Dynamic bInput Capacitance C iss V GS = 0 V , V DS = 25 V , f = 1 MHz5100pFOutput CapacitanceC oss 480Reverse Transfer Capacitance C rss 210Total Gate Charge c Q g V DS = 100 V , V GS = 10 V , ID = 85 A 90130nC Gate-Source Charge c Q gs 23Gate-Drain Charge c Q gd 34Turn-On Delay Time c t d(on) V DD = 100 V, R L = 1.5 Ω I D ≅ 65 A, V GEN = 10 V , R G = 2.5 Ω2435nsRise Time ct r 220330Turn-Off Delay Time c t d(off) 4570Fall Time ct f200300Source-Drain Diode Ratings and Characteristics (T C = 25°C)b Continuous Current I S 65A Pulsed Current I SM 140Forward Voltage a V SD I F = 65 A, V GS = 0 V 1.0 1.5V Reverse Recovery Time t rr I F = 50 A, di/dt = 100 A/µs130200ns Peak Reverse Recovery Current I RM(REC)812A Reverse Recovery ChargeQ rr0.521.2µCOutput CharacteristicsTransfer CharacteristicsVishay SiliconixSUP57N20-33TYPICAL CHARACTERISTICS 25°C, unless otherwise notedAvalanche Current vs. TimeDrain Source Breakdown vs. Junction TemperatureVishay SiliconixSUP57N20-33THERMAL RATINGSVishay Silicon ix main tain s worldwide man ufacturin g capability. Products may be man ufactured at on e of several qualified location s. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawin gs, part markin g, an d reliability data, see /ppg?72100.Maximum Avalanche and Drain Currentvs. Case TemperatureSafe Operating AreaNormalized Thermal Transient Impedance, Junction-to-CaseDisclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。
OPA4188零漂移4运放
OPA2188 采用微型小外形尺寸 (MSOP)-8 和小外形尺 寸 (SO)-14 封装。 此器件额定工作温度范围为 ―40°C 至 +105°C。
145 OPA2188 Zero-Drift Architecture
125
Precision Laser Trim Architecture
Offset Voltage (mV)
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the device product folder at .
OPA2188
PARAMETER
CONDITIONS
MIN
TYP
OFFSET VOLTAGE
VOS PSRR
Input offset voltage Power-supply rejection ratio Long-term stability
TA = –40°C to +105°C
VS = 4 V to 36 V, VCM = VS / 2
PACKAGE- PACKAGE PRODUCT LEAD DESIGNATOR
OPA2188
SO-8 MSOP-8
D DGK
PACKAGE INFORMATION(1)
SPECIFIED TEMPERATURE
RANGE
PACKAGE MARKING
–40°C to +105°C
2188
–40°C to +105°C
抗硫球阀
1
3
8
6
8
6
6
3
OQK抗硫球阀是根据用户的需求，为满足在硫化环境下的抗硫化就力裂化的要求，我们从设计，选材、制造、试验、表面处理及涂漆都严格按美国腐蚀化工程师协会NACE的有关标准要求进行。
OQK抗硫球阀不仅选材广泛且内件材料均采用表面镀镍或316材质、密封圈采用特制的聚合物材料。
使阀门不仅防腐蚀，抗硫化能力强，防火、防静电、密封性能好，适用压力与温度范围广，全通径与缩经齐备，并可配多种驱动装置，是化工、石油炼制、油气开采与输送系统理想的用阀选择。
公称通径：DN50-400mm 2"-16"
缩径：DN50-450mm 2"-18"
公称压力：PN2.5-10.0MPa
CLASS：150-900Lb
适用温度：－196℃-300℃主要性能及规范
型号、零件材料及主要参数。
AOD438中文资料
SymbolTyp Max 14.2203950R θJC 0.8 1.5Maximum Junction-to-AmbientASteady-State °C/W Maximum Junction-to-CaseCSteady-State°C/WThermal Characteristics ParameterUnits Maximum Junction-to-Ambient At ≤ 10s R θJA °C/W AOD438AOD438SymbolMin TypMaxUnits BV DSS 30V 1T J =55°C5I GSS 100nA V GS(th)1 1.83V I D(ON)85A 2.8 3.5T J =125°C4.45.54.4 5.5m Ωg FS 106S V SD 0.721V I S85A C iss 32003840pF C oss 590pF C rss 414pF R g0.540.7ΩQ g (10V)6376nC Q g (4.5V)3340nC Q gs 8.6nC Q gd 17.6nC t D(on)12ns t r 15.5ns t D(off)40ns t f 14ns t rr 3441ns Q rr30nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Gate Drain Charge V GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate resistanceV GS =0V, V DS =0V, f=1MHzV GS =4.5V, V DS =15V, I D =20ATotal Gate Charge Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L =0.75Ω, R GEN =3ΩTurn-Off Fall TimeTurn-On DelayTime m ΩV GS =4.5V, I D =20AI S =1A,V GS =0VV DS =5V, I D =20AMaximum Body-Diode Continuous CurrentInput Capacitance Output CapacitanceDYNAMIC PARAMETERS R DS(ON)Static Drain-Source On-ResistanceForward TransconductanceDiode Forward Voltage I DSS µA Gate Threshold Voltage V DS =V GS I D =250µA V DS =24V, V GS =0VV DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery TimeBody Diode Reverse Recovery Charge I F =20A, dI/dt=100A/µsDrain-Source Breakdown Voltage On state drain currentI D =250µA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =20AReverse Transfer Capacitance I F =20A, dI/dt=100A/µsA: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any givenapplication depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.G. The maximum current rating is limited by the package current capability. Rev 2: July 2005AOD438AOD438AOD438。
ADA4817-1中文资料
FEATURES
High speed −3 dB bandwidth (G = 1, RL = 100 Ω): 1050 MHz Slew rate: 870 V/μs 0.1% settling time: 9 ns
Low input bias current: 2 pA Low input capacitance
NC = NO CONNECT
Figure 1. 8-Lead ADA4817-1 LFCSP (CP-8-2)
ADA4817-2
TOP VIEW (Not to Scale)
16 FB1 15 PD1 14 +VS1 13 OUT1
–IN1 1 +IN1 2
NC 3 –VS2 4
12 –VS1 11 NC 10 +IN2 9 –IN2
Low Noise, 1 GHz FastFET Op Amps ADA4817-1/ADA4817-2
CONNECTION DIAGRAMS
ADA4817-1
TOP VIEW (Not to Scale)
PD 1 FB 2 –T 6 NC 5 –VS
07756-001
元器件交易网
ADA4817-1/ADA4817-2
TABLE OF CONTENTS
Features .............................................................................................. 1 Applications....................................................................................... 1 Connection Diagrams...................................................................... 1 General Description ......................................................................... 1 Revision History ............................................................................... 2 Specifications..................................................................................... 3
AOD冶炼设备主要参数一缆表
~5620
托圈高度
mm
1408
托圈外径
mm
4858
托圈内径
mm
4258
负载容量
ton
200
托圈的耳轴直径
mm
~530
轴承座
PCS
2
倾炉驱动机构
AOD炉倾动速度
rpm
0.2-1.0
总传动比
1168.42
电动机
KW
18.5×4
力矩能力
KN.M
~500
定位系统
绝对值编码器
顶枪
顶枪长度
mm
~5700
顶枪直径
mm
~150
氧气流量
Nm3/min
最大80
氧气压力（顶枪入口）
Mpa
~1.1
冷却水流量
m3/h
~50
冷却水压力（顶枪入口）
Mpa
~1.2
喷吹对冷却水入口/出口平均升温
0C
<15
70TAOD炉
炉子跨二期
3台
AOD炉体
公称容量
t
70
炉体直径
mm
4644
炉体高度
mm
6160（有效高度）
新砌筑耐材的炉体容积比
型号
两台ZSSP-9000
总容量
千伏安
18000
一次电压
千伏
35
二次电压
伏
1000
中频电源
功率范围
千瓦
10000～16000
进线电压
伏
1000
最大进线电流
安
260600
中频频率
赫兹
150
设备名称
设备安装位置
AOD4184中文资料
SymbolTyp Max 18224455R θJC2.43Steady-StateMaximum Junction-to-AmbientA,GSteady-State °C/WThermal Characteristics ParameterUnits Maximum Junction-to-AmbientA,Gt ≤ 10s R θJA °C/W °C/W Maximum Junction-to-CaseD,FAOD4184SymbolMin TypMaxUnits BV DSS 40V 1T J =55°C5I GSS ±100nA V GS(th) 1.7 2.23V I D(ON)120A6.78T J =125°C11138.511g FS 100S V SD 0.721V I S20A C iss 1500pF C oss 215pF C rss 135pF R g23.55ΩQ g (10V)27.235.4nC Q g (4.5V)13.6nC Q gs 4.5nC Q gd 6.4nC t D(on) 6.4ns t r 17.2ns t D(off)29.6ns t f 16.8ns t rr 2938ns Q rr26nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.TBDGate Source Charge Gate resistanceV GS =0V, V DS =0V, f=1MHzV GS =10V, V DS =20V, I D =20ATBD Total Gate Charge m ΩTurn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =20V, R L =1Ω, R GEN =3ΩTurn-Off Fall TimeTurn-On DelayTime Gate Drain Charge V GS =0V, V DS =20V, f=1MHz SWITCHING PARAMETERS Total Gate Charge V GS =4.5V, I D =15AI S =1A,V GS =0V V DS =5V, I D =20AMaximum Body-Diode Continuous CurrentInput Capacitance Output Capacitance DYNAMIC PARAMETERS R DS(ON)Static Drain-Source On-ResistanceForward TransconductanceDiode Forward VoltageElectrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions I DSS µA Body Diode Reverse Recovery ChargeI F =20A, dI/dt=100A/µsBody Diode Reverse Recovery Time V GS =10V, I D =20AReverse Transfer Capacitance I F =20A, dI/dt=100A/µs Gate Threshold Voltage V DS =V GS I D =250µA Drain-Source Breakdown Voltage On state drain currentI D =250µA, V GS =0V V GS =10V, V DS =5V V DS =40V, V GS =0VV DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM are based on T J(MAX)=150°C, using steady state junction-to-ambient thermal resistance.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.H. The maximum current rating is limited by bond-wires. Rev0: March 2008。
AOD4144中文资料
ID=250µA, VGS=0V
30
V
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
10 µA
50
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS (V) =30V ID = 55A RDS(ON) < 8mΩ RDS(ON) < 14mΩ
(VGS = 10V) (VGS = 10V) (VGS = 4.5V)
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
RθJA
18 44
22 55
Maximum Junction-to-Case
Steady-State
RθJC
2.4
3
Alpha & Omega Semiconductor, Ltd.
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
元器件交易网
4.5V
50
40
4V
30
20
10
VGS=3.5V
0
0
1
2
3
4
5
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
ID(A)
100
VDS=5V 80
60
AOD4185中文资料
Symbol V DS V GSI DM I AR E AR SymbolTyp Max 15204150R θJC2 2.4Continuous Drain Units T C =25°C T C =100°CAbsolute Maximum Ratings T C =25°C unless otherwise noted T A =70°C Power Dissipation B Avalanche CurrentC Repetitive avalanche energy L=0.1mH C ID Pulsed Drain Current CGate-Source Voltage Drain-Source Voltage Steady-StateT A =25°C P DSM T C =25°C Maximum Junction-to-Ambient A,G Steady-State Power Dissipation AP D T C =100°C °C/WThermal CharacteristicsParameterUnits Maximum Junction-to-Ambient A,Gt ≤ 10sR θJA °C/W °C/W Maximum Junction-to-CaseD,FAOD4185P-Channel Enhancement Mode Field Effect Transistor= -4.5V) 100% UIS Tested! 100% Rg Tested!General DescriptionThe AOD4185 uses advanced trench technology to GD-PAKTop ViewSBottom ViewDGSSymbolMin TypMaxUnits BV DSS -40V -1T J =55°C-5I GSS ±100nA V GS(th)-1.7-1.9-3V I D(ON)-115A12.515T J =125°C19231620g FS 50S V SD -0.72-1V I S-20A C iss 2550pF C oss 280pF C rss 190pF R g2.546ΩQ g (-10V)4255nC Q g (-4.5V)18.6Q gs 7nC Q gd 8.6nC t D(on)9.4ns t r 20ns t D(off)55ns t f 30ns t rr 3849ns Q rr47nCCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.TBD Gate Source Charge Gate resistanceV GS =0V, V DS =0V, f=1MHzV GS =-10V, V DS =-20V,I D =-20ATBD Total Gate Charge m ΩTurn-On Rise Time Turn-Off DelayTime V GS =-10V, V DS =-20V, R L =1Ω,R GEN =3ΩTurn-Off Fall TimeTurn-On DelayTime Gate Drain Charge V GS =0V, V DS =-20V, f=1MHz SWITCHING PARAMETERS Total Gate Charge V GS =-4.5V, I D =-15AI S =-1A,V GS =0VV DS =-5V, I D =-20A Maximum Body-Diode Continuous CurrentInput Capacitance Output CapacitanceDYNAMIC PARAMETERS R DS(ON)Static Drain-Source On-ResistanceForward Transconductance Diode Forward VoltageElectrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions I DSS µA Body Diode Reverse Recovery Charge I F =-20A, dI/dt=100A/µsBody Diode Reverse Recovery TimeV GS =-10V, I D =-20AReverse Transfer Capacitance I F =-20A, dI/dt=100A/µsGate Threshold Voltage V DS =V GS I D =-250µA Drain-Source Breakdown Voltage On state drain currentI D =-250µA, V GS =0V V GS =-10V, V DS =-5V V DS =-40V, V GS =0VV DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM are based on T J(MAX)=150°C, using steady state junction-to-ambient ther mal resistance.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuminga maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse ratin g.G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.H. The maximum current rating is limited by bond-wires.*This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev1: Oct 2008VdsChargeGate Charge Test Circuit & WaveformVddVdsIdVgsUnclamped Inductive Switching (UIS) Test Circuit & Waveforms2E = 1/2 LI AR ARBV DSSI ARVdd VddResistive Switching Test Circuit & Waveforms90%10%。
cd4067、4097数据手册完整版
Data sheet acquired from Harris SemiconductorSCHS052B – Revised June 2003The CD4067B and CD4097B types are suppliedin 24-lead hermetic dual-in-line ceramicpackages (F3A suffix), 24-lead dual-in-lineplastic packages (E suffix), 24-leadsmall-outline packages (M, M96, and NSRsuffixes), and 24-lead thin shrink small-outlinepackages (P and PWR suffixes).Copyright© 2003, Texas Instruments IncorporatedPACKAGING INFORMATIONAddendum-Page 1(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check /productcontent for the latest availability information and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.(4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.Addendum-Page 2Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.OTHER QUALIFIED VERSIONS OF CD4067B, CD4067B-MIL, CD4097B, CD4097B-MIL :•Catalog: CD4067B, CD4097B•Military: CD4067B-MIL, CD4097B-MILNOTE: Qualified Version Definitions:•Catalog - TI's standard catalog product•Military - QML certified for Military and Defense ApplicationsAddendum-Page 3TAPE AND REELINFORMATION *Alldimensions are nominal Device Package Type Package DrawingPinsSPQ Reel Diameter (mm)Reel Width W1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant CD4067BM96SOICDW 242000330.024.410.7515.7 2.712.024.0Q1CD4067BM96G4SOICDW 242000330.024.410.7515.7 2.712.024.0Q1CD4097BPWR TSSOP PW 242000330.016.4 6.958.3 1.68.016.0Q1PACKAGE MATERIALS INFORMATION 11-Oct-2012Pack Materials-Page 1*All dimensionsare nominal DevicePackage Type Package Drawing Pins SPQ Length (mm)Width (mm)Height (mm)CD4067BM96SOIC DW 242000367.0367.045.0CD4067BM96G4SOIC DW 242000367.0367.045.0CD4097BPWR TSSOP PW 242000367.0367.038.0PACKAGE MATERIALS INFORMATION 11-Oct-2012Pack Materials-Page 2MECHANICAL DATAMCDI004A – JANUARY 1995 – REVISED NOVEMBER 1997J (R-GDIP-T**)CERAMIC DUAL-IN-LINE PACKAGE24 PINS SHOWNAC0.018 (0,46) MINSeating Plane0.010 (0.25) MAX Lens Protrusion (Lens Optional)WIDE NARR WIDE 32NARR WIDE 0.125 (3,18) MIN 0.514(13,06) 0.571(14,50)0.541(13,74) 0.598(15,19)1.668(42,37) 1.668(42,37)1.632(41,45) 1.632(41,45)0.590(14,99) 0.590(14,99)0.624(15,85) 0.624(15,85)4040084/C 10/970.012 (0,30)0.008 (0,20)400.624(15,85) 0.624(15,85)0.590(14,99) 0.590(14,99)2.032(51,61) 2.032(51,61)2.068(52,53) 2.068(52,53)0.541(13,74) 0.598(15,19)0.514(13,06) 0.571(14,50)B13120.090 (2,29)0.060 (1,53)0.045 (1,14)0.065 (1,65)241280.022 (0,56)0.014 (0,36)NARR 24NARR WIDE 0.624(15,85) 0.624(15,85)0.590(14,99) 0.590(14,99)1.235(31,37) 1.235(31,37)1.265(32,13) 1.265(32,13)0.541(13,74) 0.598(15,19)0.514(13,06) 0.571(14,50)”A”DIM”B””C”PINS **MAXMINMINMAXMAXMIN 0.514(13,06) 0.571(14,50)0.541(13,74) 0.598(15,19)1.465(37,21) 1.465(37,21)1.435(36,45) 1.435(36,45)0.590(14,99) 0.590(14,99)0.624(15,85) 0.624(15,85)0.175 (4,45)0.140 (3,56)0.100 (2,54)NOTES: A.All linear dimensions are in inches (millimeters).B.This drawing is subject to change without notice.C.Window (lens) added to this group of packages (24-, 28-, 32-, 40-pin).D.This package can be hermetically sealed with a ceramic lid using glass frit.E.Index point is provided on cap for terminal identification.MECHANICAL DATAMPDI006B – SEPTEMBER 2001 – REVISED APRIL 2002N (R–PDIP–T24)PLASTIC DUAL–IN–LINE0.020 (0,51) MIN 0.021 (0,53)0.015 (0,38)0.100 (2,54)1240.070 (1,78) MAX 12131.222 (31,04) MAX0.125 (3,18) MIN0’–15’0.010 (0,25) NOM0.425 (10,80) MAXSeating Plane0.200 (5,08) MAX0.360 (9,14) MAX0.010 (0,25)4040051–3/D 09/01NOTES: A.All linear dimensions are in inches (millimeters).B.This drawing is subject to change without notice.C.Falls within JEDEC MS–010IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries(TI)reserve the right to make corrections,enhancements,improvements and other changes to its semiconductor products and services per JESD46,latest issue,and to discontinue any product or service per JESD48,latest issue.Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.All semiconductor products(also referred to herein as“components”)are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its components to the specifications applicable at the time of sale,in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products.Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty.Except where mandated by applicable law,testing of all parameters of each component is not necessarily performed.TI assumes no liability for applications assistance or the design of Buyers’products.Buyers are responsible for their products and applications using TI components.To minimize the risks associated with Buyers’products and applications,Buyers should provide adequate design and operating safeguards.TI does not warrant or represent that any license,either express or implied,is granted under any patent right,copyright,mask work right,or other intellectual property right relating to any combination,machine,or process in which TI components or services are rmation published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement e of such information may require a license from a third party under the patents or other intellectual property of the third party,or a license from TI under the patents or other intellectual property of TI.Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties,conditions,limitations,and notices.TI is not responsible or liable for such altered rmation of third parties may be subject to additional restrictions.Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements.Buyer acknowledges and agrees that it is solely responsible for compliance with all legal,regulatory and safety-related requirements concerning its products,and any use of TI components in its applications,notwithstanding any applications-related information or support that may be provided by TI.Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which anticipate dangerous consequences of failures,monitor failures and their consequences,lessen the likelihood of failures that might cause harm and take appropriate remedial actions.Buyer will fully indemnify TI and its representatives against any damages arising out of the use of any TI components in safety-critical applications.In some cases,TI components may be promoted specifically to facilitate safety-related applications.With such components,TI’s goal is to help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and requirements.Nonetheless,such components are subject to these terms.No TI components are authorized for use in FDA Class III(or similar life-critical medical equipment)unless authorized officers of the parties have executed a special agreement specifically governing such use.Only those TI components which TI has specifically designated as military grade or“enhanced plastic”are designed and intended for use in military/aerospace applications or environments.Buyer acknowledges and agrees that any military or aerospace use of TI components which have not been so designated is solely at the Buyer's risk,and that Buyer is solely responsible for compliance with all legal and regulatory requirements in connection with such use.TI has specifically designated certain components as meeting ISO/TS16949requirements,mainly for automotive use.In any case of use of non-designated products,TI will not be responsible for any failure to meet ISO/TS16949.Products ApplicationsAudio /audio Automotive and Transportation /automotiveAmplifiers Communications and Telecom /communicationsData Converters Computers and Peripherals /computersDLP®Products Consumer Electronics /consumer-appsDSP Energy and Lighting /energyClocks and Timers /clocks Industrial /industrialInterface Medical /medicalLogic Security /securityPower Mgmt Space,Avionics and Defense /space-avionics-defense Microcontrollers Video and Imaging /videoRFID OMAP Applications Processors /omap TI E2E Community Wireless Connectivity /wirelessconnectivityMailing Address:Texas Instruments,Post Office Box655303,Dallas,Texas75265Copyright©2013,Texas Instruments Incorporated。
AOD4184中文资料
AOS SemiconductorProduct Reliability ReportAOD4184/AOD4184L, rev APlastic Encapsulated DeviceALPHA & OMEGA Semiconductor, Inc495 Mercury DriveSunnyvale, CA 94085U.S.Tel: (408) 830-9742 Apr 15, 2008This AOS product reliability report summarizes the qualification result for AOD4184. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOD4184 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality.Table of Contents:I. Product DescriptionII. Package and Die informationIII. Environmental Stress Test Summary and ResultIV. Reliability Evaluation V. Quality Assurance InformationI. Product Description:The AOD4184/L uses advanced trench technology and design to provide excellent R DS(ON) withlow gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant-AOD4184L is Halogen FreeAbsolute Maximum Ratings T A =25°C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage V DS 40 VGate-Source Voltage V GS±20 VT A =25°C 50Continuous Drain CurrentT A =100°C I D40 Pulsed Drain Current I DM 120A T A =25°C 50Power Dissipation T A =100°C P D 25 WT A =25°C 2.3Power DissipationT A =70°C P DSM1.45W Junction and StorageTemperature Range T J , T STG -55 to 175 °CThermal CharacteristicsParameter Symbol Typ Max Units Maximum Junction-to-Ambient T ≤ 10s18 22 °C/WMaximum Junction-to-Ambient Steady-State R θJA44 55 °C/WMaximum Junction-to-LeadSteady-State R θJL 2.4 3 °C/WII. Die / Package Information:AOD4184 AOD4184L (Green Compound)Process Standard sub-micron Standard sub-micronLow voltage N channel process low voltage N channel processPackage Type 3 leads TO252 3 leads TO252 Lead Frame Bare Cu Bare Cu Die Attach Soft solder Soft solder Bond wire S: Al, 20mils; G: Au, 1.3mils S: Al, 20mils; G: Au, 1.3mils Mold Material Epoxy resin with silica filler Epoxy resin with silica fillerFiller % (Spherical/Flake) 90/10100/0 Flammability Rating UL-94 V-0 UL-94 V-0 Backside Metallization Ti / Ni / Ag Ti / Ni / Ag Moisture Level Up to Level 1 * Up to Level 1*Note * based on info provided by assembler and mold compound supplierIII. Result of Reliability Stress for AOD4184 (Standard) & AOD4184L (Green)Test Item Test ConditionTime PointLot AttributionTotal Sample sizeNumber ofFailuresSolder ReflowPrecondition Standard: 1hr PCT+3 cycle reflow@260°c Green: 168hr 85°c /85%RH +3 cycle reflow@260°c 0hrStandard: 26 lots Green: 3 lots4675pcsHTGBTemp = 150°c ,Vgs=100% of Vgsmax168 / 500 hrs1000 hrs1 lot(Note A*) 82pcs77+5 pcs / lot 0HTRBTemp = 150°c ,Vds=80% of Vdsmax168 / 500 hrs1000 hrs 1 lot(Note A*) 82pcs77+5 pcs / lot 0HAST130 +/- 2°c , 85%RH, 33.3 psi, Vgs = 80% of Vgs max 100 hrsStandard : 26 lots Green: 3 lots(Note B**) 1595pcs50+5 pcs / lotPressure Pot 121°c , 29.7psi,100%RH96 hrs Standard : 25 lots Green: 3 lots (Note B**) 1540pcs50+5 pcs / lotTemperature Cycle-65°c to 150°c , air to air, 250 / 500 cyclesStandard : 25 lots Green: 3 lots(Note B**)1540pcs50+5 pcs / lotIII. Result of Reliability Stress for AOD4184 (Standard) & AOD4184L (Green) ContinuesDPA Internal VisionCross-sectionX-ray NA 555555CSAM NA 5 5Bond Integrity Room Temp150°c bake150°c bake 0hr250hr500hr40404040 wires40 wires40 wiresSolderability 245°c 5 sec15 15 leads 0Note A: The HTGB and HTRB reliability data presents total of available AOD4184 andAOD4184L burn-in data up to the published date.Note B: The pressure pot, temperature cycle, HAST and HTS reliability data for AOD4184 andAOD4184L comes from the AOS generic package qualification data.IV. Reliability EvaluationFIT rate (per billion): 43.2MTTF = 2642 yearsIn general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years oflifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activationenergy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliabilitygroup also routinely monitors the product reliability up to 1000 hr at and performs the necessaryfailure analysis on the units failed for reliability test(s).The presentation of FIT rate for the individual product reliability is restricted by the actual burn-insample size of the selected product (AOD4184). Failure Rate Determination is based on JEDECStandard JESD 85. FIT means one failure per billion hours.Failure Rate = Chi2x 109/ [2 (N) (H) (Af)] = 1.83 x 109/ [2 (164) (500) (258)] = 43.2MTTF = 109/ FIT =2.31 x 107hrs =2642 yearsChi² = Chi Squared Distribution, determined by the number of failures and confidence intervalN = Total Number of units from HTRB and HTGB testsH = Duration of HTRB/HTGB testingAf = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s]Acceleration Factor ratio list:55 deg C70 deg C85 deg C100 deg C115 deg C130 deg C150 deg CAf 2588732135.642.59 1Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16Tj u =The use junction temperature in degree (Kelvin), K = C+273.16k = Boltzmann’s constant, 8.617164 X 10 -5eV / KV. Quality Assurance InformationAcceptable Quality Level for outgoing inspection: 0.1% for electrical and visual. Guaranteed Outgoing Defect Rate: < 25 ppmQuality Sample Plan: conform to Mil-Std-105D。
AOD417中文资料
SymbolTyp Max 16.7254050R θJL 2.53Maximum Junction-to-Case DSteady-State°C/WThermal Characteristics ParameterUnits Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W AOD417AOD417SymbolMin TypMaxUnits BV DSS -30V -1T J =55°C-5I GSS ±100nA V GS(th)-1-1.9-3V I D(ON)-60A 2734T J =125°C364055m Ωg FS 18S V SD -0.75-1V I S-6A C iss 920pF C oss 140pF C rss 90pF R g69ΩQ g (10V)16.2nC Q g (4.5V)8.2nC Q gs 2.9nC Q gd 3.6nC t D(on)8ns t r 30ns t D(off)22ns t f 26ns t rr 23ns Q rr14nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Maximum Body-Diode Continuous CurrentInput Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS V GS =0V, V DS =-15V, f=1MHz Gate Drain Charge Total Gate Charge (10V)V GS =-10V, V DS =-15V, I D =-20ATurn-On Rise Time Turn-Off DelayTime V GS =-10V, V DS =-15V, R L =0.75Ω, R GEN =3ΩGate resistanceV GS =0V, V DS =0V, f=1MHzTurn-Off Fall TimeSWITCHING PARAMETERSTotal Gate Charge (4.5V)Gate Source Charge m ΩV GS =-4.5V, I D =-7AI S =-1A,V GS =0V V DS =-5V, I D =-20AR DS(ON)Static Drain-Source On-ResistanceForward TransconductanceDiode Forward VoltageI DSS µA Gate Threshold Voltage V DS =V GS I D =-250µA V DS =-24V, V GS =0VV DS =0V, V GS =±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions Body Diode Reverse Recovery TimeBody Diode Reverse Recovery Charge I F =-20A, dI/dt=100A/µsDrain-Source Breakdown Voltage On state drain currentI D =-250µA, V GS =0V V GS =-10V, V DS =-5V V GS =-10V, I D =-20AReverse Transfer Capacitance I F =-20A, dI/dt=100A/µsA: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment withT A =25°C. The Power dissipation P DSM is based on R θJA (<10s) and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C.G. The maximum current rating is limited by bond-wires.H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev 0: Oct. 2006AOD417AOD417AOD417TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS。
亚德诺ADA4177-1 ADA4177-2 ADA4177-4运算放大器数据手册说明书
提供OVP 和EMI 保护的精密、 低噪声、低偏置电流运算放大器 数据手册ADA4177-1/ADA4177-2/ADA4177-4Rev. DDocument FeedbackInformation furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks andregistered trademarks are the property of their respective owners.One Technology Way, P .O. Box 9106, Norwood, MA 02062-9106, U.S.A.Tel: 781.329.4700 ©2014–2017 Analog Devices, Inc. All rights reserved. Technical Support /cnADI 中文版数据手册是英文版数据手册的译文，敬请谅解翻译中可能存在的语言组织或翻译错误，ADI 不对翻译中存在的差异或由此产生的错误负责。
如需确认任何词语的准确性，请参考ADI 提供的最产品特性低失调电压：60 μV （最大值，25°C ，8引脚和14引脚SOIC ） 低失调电压漂移：1 μV/°C （最大值，8引脚和14引脚SOIC ） 低输入偏置电流：1 nA （最大值，25°C ）低电压噪声密度：8 nV/√Hz （典型值，1 kHz ）大信号电压增益(AVO)：100 dB （最小值，全电源电压和工作温度范围）支持高于或低于供电轨电压32 V 的输入过压保护 集成EMI 滤波器70 dB （1000 MHz 下的典型抑制） 90 dB （2400 MHz 下的典型抑制） 轨到轨输出摆幅低供电电流：每个放大器500 µA （典型值） 宽带宽增益带宽积(A V = 100)：3.5 MHz （典型值） 单位增益交越(A V = 1)：3.5 MHz （典型值） −3 dB 带宽(A V = 1)：6 MHz （典型值） 双电源供电额定电压±5 V 至±15 V ，工作电压±2.5 V 至±18 V 单位增益稳定 无反相长期失调电压漂移（10,000小时）：2 µV （典型值） 温度迟滞：2 µV （典型值）应用无线基站控制电路 光纤网络控制电路 仪器仪表传感器和控制元件热电偶、RTD 、应变计、分流测量概述ADA4177-1单通道、ADA4177-2双通道和ADA4177-4四通道放大器具有低失调电压（2 μV 典型值）和低漂移（1 μV/°C 最大值）、低输入偏置电流、低噪声和低功耗（500 μA 典型值）特性。
OP4177中文资料
14-Lead SOIC (R-Suffix)
OUT A 1 ؊IN A 2 +IN A 3 V+ 4 +IN B 5 ؊IN B 6 OUT B 7 14 OUT D 13 ؊IN D
OUT A –IN A +IN A V+ +IN B –IN B OUT B
14-Lead TSSOP (RU-Suffix)
8-Lead SOIC (R-Suffix)
OP2177
4 5
OUT A
1
8 V+
؊IN A 2 +IN A 3 V؊ 4
OP2177
7 OUT B 6 ؊ OPx177 family consists of very high-precision, single, dual, and quad amplifiers featuring extremely low offset voltage and drift, low input bias current, low noise, and low power consumption. Outputs are stable with capacitive loads of over 1,000 pF with no external compensation. Supply current is less than 500 µA per amplifier at 30 V. Internal 500 Ω series resistors protect the inputs, allowing input signal levels several volts beyond either supply without phase reversal. Unlike previous high-voltage amplifiers with very low offset voltages, the OP1177 and OP2177 are available in the tiny MSOP 8-lead surface-mount package, while the OP4177 is available in TSSOP14. Moreover, specified performance in the MSOP/TSSOP package is identical to performance in the SOIC package. OPx177 family offers the widest specified temperature range of any high-precision amplifier in surface-mount packaging. All versions are fully specified for operation from –40°C to +125°C for the most demanding operating environments. Applications for these amplifiers include precision diode power measurement, voltage and current level setting, and level detection in optical and wireless transmission systems. Additional applications include line powered and portable instrumentation
AOD414中文资料
SymbolTyp Max 14.2204050R θJL 0.56 1.5°C/W Maximum Junction-to-Ambient ASteady-State Maximum Junction-to-Lead CSteady-State°C/WThermal Characteristics ParameterUnits Maximum Junction-to-Ambient At ≤ 10s R θJA °C/WSymbolMin TypMaxUnits BV DSS 30V 0.0051T J =55°C5I GSS 100nA V GS(th) 1.2 1.82.4V I D(ON)110A 4.2 5.2T J =125°C67.55.67m Ωg FS 85S V SD 0.71V I S85A C iss 60607000pF C oss 638pF C rss 355pF R g0.450.6ΩQ g (10V)96.4115nC Q g (4.5V)46.455nC Q gs 13.6nC Q gd 15.6nC t D(on)15.721ns t r 14.221ns t D(off)55.575ns t f 1421ns t rr 3138ns Q rr2429nCT C =100°C T A =25°C-55 to 175THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Gate Drain Charge V GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate resistanceV GS =0V, V DS =0V, f=1MHzTotal Gate Charge V GS =4.5V, V DS =15V, I D =20ATurn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L =0.75Ω, R GEN =3ΩTurn-Off Fall TimeTurn-On DelayTime m ΩV GS =4.5V, I D =20AI S =1A,V GS =0V V DS =5V, I D =20AMaximum Body-Diode Continuous CurrentInput Capacitance Output Capacitance DYNAMIC PARAMETERS R DS(ON)Static Drain-Source On-ResistanceForward TransconductanceDiode Forward VoltageI DSS µA Gate Threshold Voltage V DS =V GS I D =250µA V DS =24V, V GS =0VV DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery ChargeI F =20A, dI/dt=100A/µsDrain-Source Breakdown Voltage On state drain currentI D =250µA, V GS =0V V GS =4.5V, V DS =5V V GS =10V, I D =20AReverse Transfer Capacitance I F =20A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.G. The maximum current rating is limited by the package current capability.。
不锈钢牌号对照表之欧阳文创编
不锈钢牌号对照表
欧阳文创编
欧阳文创编
欧阳文创编
欧阳文创编
世界金属牌号对照表
碳素结构钢
欧阳文创编
欧阳文创编
［返回］优质碳素结构钢
欧阳文创编
欧阳文创编
欧阳文创编
欧阳文创编
欧阳文创编
［返回］碳素工具钢
欧阳文创编
［返回］合金结构钢
欧阳文创编
欧阳文创编
欧阳文创编
欧阳文创编
欧阳文创编
欧阳文创编
［返回］淬透性合金结构钢
欧阳文创编
欧阳文创编
［返回］弹簧钢
欧阳文创编
［返回］滚动轴承钢
［返回］高速工具钢
欧阳文创编
欧阳文创编
［返回］不锈耐酸钢
欧阳文创编
欧阳文创编
欧阳文创编
［返回］耐热钢
欧阳文创编
欧阳文创编
［返回］易切结构钢
欧阳文创编
合金工具钢
欧阳文创编
欧阳文创编
欧阳文创编
欧阳文创编。
常用不锈钢弹片的牌号特性及用途
常用不锈钢弹片的牌号特性及用途 ， 1，奥氏体形 1Cr17Mn6Ni5N 节镍钢种，代替牌号1Cr17Ni7，冷加工后具有磁性。
铁道车辆用。
2， 1Cr18Mn8Ni5N 节镍钢种，代替牌号1Cr18Ni9 ；3， 1Cr17Ni7 经冷加工有高的强度。
铁道车辆，传送带，螺栓螺母；4， 1Cr18Ni9 经冷加工有高的强度，但伸长率比1Cr17Ni7稍差。
建筑用装饰部件。
5， Y1Cr18Ni9 提高切削、耐烧蚀性。
最适用于自动车床。
螺栓螺母；6， Y1Cr18Ni9Se 提高切削、耐烧蚀性。
最适用于自动车床。
铆钉、螺钉；7， 0Cr19Ni9 作为不锈耐热钢使用最广泛，食品用设备，一般化工设备，原子能工业用；8， 00Cr19Ni11 比0Cr19Ni9碳含量更低的钢，耐晶间腐蚀性优越，为焊接后不进行热处理部件类；9， 0Cr19Ni9N 在牌号0Cr19Ni9上加N，强度提高，塑性不降低。
使材料的厚度减少。
作为结构用强度部件；10， 0Cr19Ni10NbN 在牌号0Cr19Ni9上加N和Nb，具有与0Cr19Ni9N相同的特性和用途；11， 00Cr18Ni10N 在牌号00Cr19Ni11上加N，具有以上牌号同样特性，用途与0Cr19Ni9N相同，但耐晶间腐蚀性更好；12， 1Cr18Ni12 与0Cr19Ni9相比，加工硬化性。
旋压加工，特殊拉拨，冷镦用；13， 0Cr23Ni13 耐腐蚀性，耐热性均比0Cr19Ni9；14， 0Cr25Ni20 搞氧化性比0Cr23Ni13好。
实际上多作为耐热钢使用；15， 0Cr17Ni12Mo2 在海水和其他各种介质中，耐腐蚀性比0Cr19Ni9好。
主要作耐点蚀材料；16， 0Cr18Ni12Mo2Ti 用于抗硫酸、磷酸、蚁酸、醋酸的设备，有良好耐晶间腐蚀性；17，00Cr17Ni14Mo2 为0Cr17Ni12Mo2的超低碳钢，比0Cr17Ni12Mo2耐晶间腐蚀性好；18， 0Cr17Ni12Mo2N 在牌号0Cr17Ni12Mo2中加入N，提高强度，不降低塑性，使材料厚度减薄。
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
Symbol V DS V GSI DMI AR E AR SymbolTyp Max 15204150R θJC2 2.5T =70°CContinuous Drain T C =25°C I DSM T C =100°CP D T C =100°C I D Continuous Drain Parameter T C =25°C T C =100°C Maximum Junction-to-Ambient A D Steady-State Avalanche CurrentCPower DissipationAT A =25°C P DSM °C/W Absolute Maximum Ratings T A =25°C unless otherwise noted Pulsed Drain Current CPower DissipationBT C =25°C Gate-Source Voltage Drain-Source Voltage Maximum Junction-to-CaseSteady-State°C/WThermal CharacteristicsParameterUnits Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Repetitive avalanche energy L=0.1mH CAOD4187P-Channel Enhancement Mode Field Effect Transistor= -10V) = -10V) = -4.5V) 100% UIS Tested! 100% Rg Tested!General DescriptionThe AOD4187 uses advanced trench technology and DSGD-PAKTop ViewSBottom ViewDGSSymbolMin TypMaxUnits BV DSS -40V -1T J =55°C -5I GSS ±100nA V GS(th)-1.7-1.9-3V I D(ON)-100A1417T J =125°C 21261823g FS 40S V SD -0.7-1V I S-50A C iss 196023502850pF C oss 185240320pF C rss 130185260pF R g2 5.511ΩQ g (-10V)354250nC Q g (-4.5V)162025nC Q gs 5.5 6.68nC Q gd 79.714nC t D(on)9.6ns t r 29ns t D(off)56ns t f 19.2ns t rr 141721ns Q rr404960nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICEBody Diode Reverse Recovery TimeBody Diode Reverse Recovery Charge I F =-12A, dI/dt=500A/µsDrain-Source Breakdown Voltage On state drain currentI D =-250µA, V GS =0V V GS =-10V, V DS =-5V V GS =-10V, I D =-12AReverse Transfer Capacitance I F =-12A, dI/dt=500A/µsElectrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions I DSS µA Gate Threshold Voltage V DS =V GS I D =-250µA V DS =-40V, V GS =0VV DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance Diode Forward VoltageR DS(ON)Static Drain-Source On-ResistanceMaximum Body-Diode Continuous CurrentInput Capacitance Output CapacitanceDYNAMIC PARAMETERS I S =-1A,V GS =0VV DS =-5V, I D =-12A V GS =-4.5V, I D =-8Am ΩTurn-On Rise Time Turn-Off DelayTime V GS =-10V, V DS =-20V, R L =1.6Ω,R GEN =3ΩTurn-Off Fall TimeTurn-On DelayTime Total Gate Charge Gate Drain Charge V GS =0V, V DS =-20V, f=1MHz SWITCHING PARAMETERS Gate Source Charge Gate resistanceV GS =0V, V DS =0V, f=1MHzTotal Gate Charge V GS =-10V, V DS =-20V, I D =-12AA: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows i t.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keepinitial T J =25°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C.The SOA curve provides a single pulse rating.G. The maximum current rating is limited by bond-wires.H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.*This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev 1: Oct-2008VdsChargeGate Charge Test Circuit & WaveformVddVdsIdVgsUnclamped Inductive Switching (UIS) Test Circuit & Waveforms2E = 1/2 LI AR ARBV DSSI ARVdd VddResistive Switching Test Circuit & Waveforms。