EM7164SU16W-55LL中文资料
宇电AI-716_716P型精密人工智能工业调节器 S082-10
AI-716/716P型精密人工智能工业调节器使用说明书(V8.3)目录1概述 (1)1.1主要特点 (1)1.2型号定义 (2)1.3模块使用 (5)1.3.1模块插座功能定义 (5)1.3.2常用模块型号 (6)1.3.3模块安装更换 (8)1.3.4模块的电气隔离 (8)1.3.5部分模块应用说明 (9)1.4技术规格 (10)1.5节能与环保的设计 (12)1.6接线方法 (13)2显示及操作 (21)2.1面板说明 (21)2.2参数设置流程 (22)2.3程序设置流程 (23)2.4操作方法 (24)2.4.1设置参数 (24)2.4.2快捷操作功能 (24)3参数功能 (27)3.1自定义现场参数 (27)3.2完整参数表 (28)3.3特殊功能补充说明 (38)3.3.1单相移相触发输出 (38)3.3.2上电时免除报警功能 (38)3.3.3通讯功能 (38)3.3.4温度变送器/程序给定发生器 (39)3.3.5精细控制 (39)3.3.6自定义输入规格 (40)4程序控制(仅适用AI-716P型) (41)4.1功能及概念 (41)4.2程序编排 (43)4.2.1斜率模式 (43)4.2.2平台模式 (44)4.2.3设置程序给定值及时间 (45)4.2.4运行多条曲线时程序的编排方法 (46)1概述1.1主要特点●输入可自由选择热电偶、热电阻、电压、电流并可扩充输入及自定义非线性校正表格。
●高精度、低温漂,热电偶冷端除自动补偿外可支持Cu50铜电阻或冰点等高精度补偿模式。
●采用先进的AI人工智能PID调节算法,无超调,具备自整定(AT)功能及全新的精细控制模式。
●采用先进的模块化结构,提供丰富的输出规格,能广泛满足各种应用场合的需要,交货迅速且维护方便。
●重视节能与环保的设计理念,采用高品质元件实现低功耗与低温漂,有效节约客户能源。
●每秒12.5次测量采样数率,最小控制周期达0.24秒,能适应快速变化对象的控制精度。
W9864G6IH-6中文资料
1M × 4BANKS × 16BITS SDRAM Table of Contents-1.GENERAL DESCRIPTION (3)2.FEATURES (3)3.AVAILABLE PART NUMBER (4)4.PIN CONFIGURATION (4)5.PIN DESCRIPTION (5)6.BLOCK DIAGRAM (6)7.FUNCTIONAL DESCRIPTION (7)7.1Power Up and Initialization (7)7.2Programming Mode Register Set command (7)7.3Bank Activate Command (7)7.4Read and Write Access Modes (7)7.5Burst Read Command (8)7.6Burst Command (8)7.7Read Interrupted by a Read (8)7.8Read Interrupted by a Write (8)7.9Write Interrupted by a Write (8)7.10Write Interrupted by a Read (8)7.11Burst Stop Command (9)7.12Addressing Sequence of Sequential Mode (9)7.13Addressing Sequence of Interleave Mode (9)7.14Auto-precharge Command (10)7.15Precharge Command (10)7.16Self Refresh Command (10)7.17Power Down Mode (11)7.18No Operation Command (11)7.19Deselect Command (11)7.20Clock Suspend Mode (11)8.OPERATION MODE (12)9.ELECTRICAL CHARACTERISTICS (13)9.1Absolute Maximum Ratings (13)9.2Recommended DC Operating Conditions (13)9.3Capacitance (13)9.4DC Characteristics (14)9.5AC Characteristics and Operating Condition (15)10.TIMING WAVEFORMS (18)10.1Command Input Timing (18)10.2Read Timing (19)10.3Control Timing of Input/Output Data (20)10.4Mode Register Set Cycle (21)11.OPERATINOPERATING TIMING EXAMPLE (22)11.1Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) (22)11.2Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge) (23)11.3Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) (24)11.4Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge) (25)11.5Interleaved Bank Write (Burst Length = 8) (26)11.6Interleaved Bank Write (Burst Length = 8, Auto-precharge) (27)11.7Page Mode Read (Burst Length = 4, CAS Latency = 3) (28)11.8Page Mode Read/Write (Burst Length = 8, CAS Latency = 3) (29)11.9Auto-precharge Read (Burst Length = 4, CAS Latency = 3) (30)11.10Auto-precharge Write (Burst Length = 4) (31)11.11Auto Refresh Cycle (32)11.12Self Refresh Cycle (33)11.13Bust Read and Single Write (Burst Length = 4, CAS Latency = 3) (34)11.14Power-down Mode (35)11.15Auto-precharge Timing (Write Cycle) (36)11.16Auto-precharge Timing (Read Cycle) (37)11.17Timing Chart of Read to Write Cycle (38)11.18Timing Chart of Write to Read Cycle (38)11.19Timing Chart of Burst Stop Cycle (Burst Stop Command) (39)11.20Timing Chart of Burst Stop Cycle (Precharge Command) (39)11.21CKE/DQM Input Timing (Write Cycle) (40)11.22CKE/DQM Input Timing (Read Cycle) (41)12.PACKAGE SPECIFICATION (42)12.154L TSOP (II)-400 mil (42)13.REVISION HISTORY (43)1. GENERAL DESCRIPTIONW9864G6IH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits. W9864G6IH delivers a data bandwidth of up to 200M words per second. For different application, W9864G6IH is sorted into the following speed grades: -5, -6, -7/-7S. The -5 parts can run up to 200MHz/CL3. The -6 parts can run up to 166MHz/CL3. The -7/-7S parts can run up to 143MHz/CL3. And the grade of -7S with t RP = 18nS.Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle.The multiple bank nature enables interleaving among internal banks to hide the precharging time.By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9864G6IH is ideal for main memory in high performance applications.2. FEATURES• 3.3V± 0.3V for -5/-6 speed grades power supply• 2. 7V~3.6V for -7/-7S speed grades power supply• 1,048,576 words × 4 banks × 16 bits organization•Self Refresh Current: Standard and Low Power•CAS Latency: 2 & 3•Burst Length: 1, 2, 4, 8 and full page•Sequential and Interleave Burst•Byte data controlled by LDQM, UDQM•Auto-precharge and controlled precharge•Burst read, single write operation•4K refresh cycles/64mS• Interface: LVTTL•Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant3. AVAILABLE PART NUMBERPART NUMBERSPEEDSELF REFRESH CURRENT (MAX.)OPERATING TEMPERATUREW9864G6IH-5 200MHz/CL3 2 mA 0°C ~ 70°C W9864G6IH-6 166MHz/CL3 2 mA 0°C ~ 70°C W9864G6IH-7 143MHz/CL3 2 mA 0°C ~ 70°C W9864G6IH-7S 143MHz/CL32 mA0°C ~ 70°C4. PIN CONFIGURATION5. PIN DESCRIPTION6. BLOCK DIAGRAM7. FUNCTIONAL DESCRIPTION7.1 Power Up and InitializationThe default power up state of the mode register is unspecified. The following power up and initialization sequence need to be followed to guarantee the device being preconditioned to each user specific needs.During power up, all V DD and V DDQ pins must be ramp up simultaneously to the specified voltage when the input signals are held in the "NOP" state. The power up voltage must not exceed V DD + 0.3V on any of the input pins or V DD supplies. After power up, an initial pause of 200 µS is required followed by a precharge of all banks using the precharge command. To prevent data contention on the DQ bus during power up, it is required that the DQM and CKE pins be held high during the initial pause period. Once all banks have been precharged, the Mode Register Set Command must be issued to initialize the Mode Register. An additional eight Auto Refresh cycles (CBR) are also required before or after programming the Mode Register to ensure proper subsequent operation.7.2 Programming Mode Register Set commandAfter initial power up, the Mode Register Set Command must be issued for proper device operation. All banks must be in a precharged state and CKE must be high at least one cycle before the Mode Register Set Command can be issued. The Mode Register Set Command is activated by the low signals of RAS, CAS, CS and WE at the positive edge of the clock. The address input data during this cycle defines the parameters to be set as shown in the Mode Register Operation table. A new command may be issued following the mode register set command once a delay equal to t RSC has elapsed. Please refer to the next page for Mode Register Set Cycle and Operation Table.7.3 Bank Activate CommandThe Bank Activate command must be applied before any Read or Write operation can be executed. The operation is similar to RAS activate in EDO DRAM. The delay from when the Bank Activate command is applied to when the first read or write operation can begin must not be less than the RAS to CAS delay time (t RCD). Once a bank has been activated it must be precharged before another Bank Activate command can be issued to the same bank. The minimum time interval between successive Bank Activate commands to the same bank is determined by the RAS cycle time of the device (t RC). The minimum time interval between interleaved Bank Activate commands (Bank A to Bank B and vice versa) is the Bank to Bank delay time (t RRD). The maximum time that each bank can be held active is specified as t RAS(max.).7.4 Read and Write Access ModesAfter a bank has been activated, a read or write cycle can be followed. This is accomplished by setting RAS high and CAS low at the clock rising edge after minimum of t RCD delay. WE pin voltage level defines whether the access cycle is a read operation (WE high), or a write operation (WE low). The address inputs determine the starting column address. Reading or writing to a different row within an activated bank requires the bank be precharged and a new Bank Activate command be issued. When more than one bank is activated, interleaved bank Read or Write operations are possible. By using the programmed burst length and alternating the access and precharge operations between multiple banks, seamless data access operation among many different pages can be realized. Read or Write Commands can also be issued to the same bank or between active banks on every clock cycle.7.5 Burst Read CommandThe Burst Read command is initiated by applying logic low level to CS and CAS while holding RAS and WE high at the rising edge of the clock. The address inputs determine the starting column address for the burst. The Mode Register sets type of burst (sequential or interleave) and the burst length (1, 2, 4, 8, full page) during the Mode Register Set Up cycle. Table 2 and 3 in the next page explain the address sequence of interleave mode and sequence mode.7.6 Burst CommandThe Burst Write command is initiated by applying logic low level to CS, CAS and WE while holding RAS high at the rising edge of the clock. The address inputs determine the starting column address. Data for the first burst write cycle must be applied on the DQ pins on the same clock cycle that the Write Command is issued. The remaining data inputs must be supplied on each subsequent rising clock edge until the burst length is completed. Data supplied to the DQ pins after burst finishes will be ignored.7.7 Read Interrupted by a ReadA Burst Read may be interrupted by another Read Command. When the previous burst is interrupted, the remaining addresses are overridden by the new read address with the full burst length. The data from the first Read Command continues to appear on the outputs until the CAS Latency from the interrupting Read Command the is satisfied.7.8 Read Interrupted by a WriteTo interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output drivers) in a high impedance state to avoid data contention on the DQ bus. If a Read Command will issue data on the first and second clocks cycles of the write operation, DQM is needed to insure the DQs are tri-stated. After that point the Write Command will have control of the DQ bus and DQM masking is no longer needed.7.9 Write Interrupted by a WriteA burst write may be interrupted before completion of the burst by another Write Command. When the previous burst is interrupted, the remaining addresses are overridden by the new address and data will be written into the device until the programmed burst length is satisfied.7.10 Write Interrupted by a ReadA Read Command will interrupt a burst write operation on the same clock cycle that the Read Command is activated. The DQs must be in the high impedance state at least one cycle before the new read data appears on the outputs to avoid data contention. When the Read Command is activated, any residual data from the burst write cycle will be ignored.7.11 Burst Stop CommandA Burst Stop Command may be used to terminate the existing burst operation but leave the bank open for future Read or Write Commands to the same page of the active bank, if the burst length is full page. Use of the Burst Stop Command during other burst length operations is illegal. The Burst Stop Command is defined by having RAS and CAS high with CS and WE low at the rising edge of the clock. The data DQs go to a high impedance state after a delay, which is equal to the CAS Latency in a burst read cycle, interrupted by Burst Stop.7.12 Addressing Sequence of Sequential ModeA column access is performed by increasing the address from the column address which is input to the device. The disturb address is varied by the Burst Length as shown in Table 2.7.14 Auto-precharge CommandIf A10 is set to high when the Read or Write Command is issued, then the auto-precharge function is entered. During auto-precharge, a Read Command will execute as normal with the exception that the active bank will begin to precharge automatically before all burst read cycles have been completed. Regardless of burst length, it will begin a certain number of clocks prior to the end of the scheduled burst cycle. The number of clocks is determined by CAS Latency.A Read or Write Command with auto-precharge cannot be interrupted before the entire burst operation is completed for the same bank. Therefore, use of a Read, Write, or Precharge Command is prohibited during a read or write cycle with auto-precharge. Once the precharge operation has started, the bank cannot be reactivated until the Precharge time (t RP) has been satisfied. Issue of Auto-Precharge command is illegal if the burst is set to full page length. If A10 is high when a Write Command is issued, the Write with Auto-Precharge function is initiated. The SDRAM automatically enters the precharge operation two clocks delay from the last burst write cycle. This delay is referred to as write t WR. The bank undergoing auto-precharge cannot be reactivated until t WR and t RP are satisfied. This is referred to as t DAL, Data-in to Active delay (t DAL = t WR + t RP). When using the Auto-precharge Command, the interval between the Bank Activate Command and the beginning of the internal precharge operation must satisfy t RAS(min).7.15 Precharge CommandThe Precharge Command is used to precharge or close a bank that has been activated. The Precharge Command is entered when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The Precharge Command can be used to precharge each bank separately or all banks simultaneously. Three address bits, A10, BS0, and BS1 are used to define which bank(s) is to be precharged when the command is issued. After the Precharge Command is issued, the precharged bank must be reactivated before a new read or write access can be executed. The delay between the Precharge Command and the Activate Command must be greater than or equal to the Precharge time (t RP).7.16 Self Refresh CommandThe Self Refresh Command is defined by having CS, RAS, CAS and CKE held low with WE high at the rising edge of the clock. All banks must be idle prior to issuing the Self Refresh Command. Once the command is registered, CKE must be held low to keep the device in Self Refresh mode. When the SDRAM has entered Self Refresh mode all of the external control signals, except CKE, are disabled. The clock is internally disabled during Self Refresh Operation to save power. The device will exit Self Refresh operation after CKE is returned high. A minimum delay time is required when the device exits Self Refresh Operation and before the next command can be issued. This delay is equal to the t AC cycle time plus the Self Refresh exit time.If, during normal operation, AUTO REFRESH cycles are issued in bursts (as opposed to being evenly distributed), a burst of 4,096 AUTO REFRESH cycles should be completed just prior to entering and just after exiting the self refresh mode.7.17 Power Down ModeThe Power Down mode is initiated by holding CKE low. All of the receiver circuits except CKE are gated off to reduce the power. The Power Down mode does not perform any refresh operations, therefore the device can not remain in Power Down mode longer than the Refresh period (t REF) of the device.The Power Down mode is exited by bringing CKE high. When CKE goes high, a No Operation Command is required on the next rising clock edge, depending on t CK. The input buffers need to be enabled with CKE held high for a period equal to t CKS(min.) + t CK(min.).7.18 No Operation CommandThe No Operation Command should be used in cases when the SDRAM is in a idle or a wait state to prevent the SDRAM from registering any unwanted commands between operations. A No Operation Command is registered when CS is low with RAS, CAS, and WE held high at the rising edge of the clock. A No Operation Command will not terminate a previous operation that is still executing, such as a burst read or write cycle.7.19 Deselect CommandThe Deselect Command performs the same function as a No Operation Command. Deselect Command occurs when CS is brought high, the RAS, CAS, and WE signals become don't Care.7.20 Clock Suspend ModeDuring normal access mode, CKE must be held high enabling the clock. When CKE is registered low while at least one of the banks is active, Clock Suspend Mode is entered. The Clock Suspend mode deactivates the internal clock and suspends any clocked operation that was currently being executed. There is a one clock delay between the registration of CKE low and the time at which the SDRAM operation suspends. While in Clock Suspend mode, the SDRAM ignores any new commands that are issued. The Clock Suspend mode is exited by bringing CKE high. There is a one clock cycle delay from when CKE returns high to when Clock Suspend mode is exited.8. OPERATION MODEFully synchronous operations are performed to latch the commands at the positive edges of CLK. Table 1 shows the truth table for the operation commands.Table 1 Truth Table (Note (1), (2))Notes:(1) v = valid, x = Don't care, L = Low Level, H = High Level(2) CKEn signal is input leve l when commands are provided.(3) These are state of bank designated by BS0, BS1 signals.(4) Device state is full page burst operation.(5) Power Down Mode can not be entered in the burst cycle.When this command asserts in the burst cycle, device state is clock suspend mode.9. ELECTRICAL CHARACTERISTICS9.1 Absolute Maximum RatingsNOTESUNIT PARAMETER SYMBOLRATINGInput, Column Output Voltage V IN, V OUT-0.3 ~ V DD+ 0.3V 1Power Supply Voltage V DD, V DDQ -0.3 ~ 4.6 V 1Operating Temperature T OPR 0 ~ 70 °C 1Storage Temperature T STG -55 ~ 150 °C 1Soldering Temperature (10s) T SOLDER 260 °C 11 Power Dissipation P D 1 WShort Circuit Output Current I OUT 50 mA1 Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliabilityof the device.9.2 Recommended DC Operating Conditions(T A = 0 to 70°C for -5/-6/-7/-7S)UNITNOTESMAX.PARAMETER SYM.MIN.TYP.Supply Voltage (Normal operation) V DD 3.0 3.3 3.6 V 2Supply voltage (for –7/-7S) V DD 2.7- 3.6 V 2 Supply Voltage for I/O Buffer V DDQ 3.0 3.3 3.6 V 2Supply Voltage for I/O Buffer (for -7/-7S) V DDQ 2.7- 3.6 V 2Input High Voltage V IH 2.0- V DD + 0.3 V 2Input Low Voltage V IL -0.3- 0.8 V 2Note: V IH(max) = V DD/ V DDQ+1.5V for pulse width < 5 nSV IL(min) = V SS/ V SSQ-1.5V for pulse width < 5 nS9.3 Capacitance(V DD =3V±0.3V for-5/-6, V DD = 2.7V-3.6V for -7/-7S , T A = 25 °C, f = 1 MHz)Note: These parameters are periodically sampled and not 100% tested9.4 DC Characteristics(V DD = 3V±0.3V for-5/-6 ,V DD = 2.7V-3.6V for -7/-7S on T A = 0 to 70°C)NOTESUNITMIN.PARAMETER SYMBOLMAX.Input Leakage CurrentI I(L) -5 5 µA(0V ≤V IN≤ V DD, all other pins not under test = 0V)Output Leakage Currentl O(L) -5 5 µA(Output disable, 0V ≤ V OUT≤ V DDQ)LVTTL Output ″H″ Level VoltageV OH 2.4 - V(I OUT = -2 mA)LVTTL Output“L″ Level VoltageV OL - 0.4 V(I OUT = 2 mA)9.5 AC Characteristics and Operating Condition(V DD =3V±0.3V for-5/-6, V DD = 2.7V-3.6V for -7/-7S on T A = 0 to 70°C) (Notes: 5, 6)-5 -6 -7 -7SPARAMETER SYM. MIN. MAX. MIN.MAX. MIN.MAX.MIN.MAX.UNIT NOTESRef/Active to Ref/ActiveCommand Period t RC 55 60 65 65 Active to precharge Command Period t RAS 40 10000042 10000045 10000045 100000 Active to Read/Write Command Delay Time t RCD 15 18 20 20 nSRead/Write(a) to Read/ Write(b) Command Periodt CCD 1 1 1 1 t CK Precharge to Active(b) Command Period t RP 15 18 20 18Active(a) to Active(b) Command Periodt RRD 10 12 14 14 nSWrite Recovery TimeCL* = 2CL* = 3t WR2 2 2 2 t CKCLK Cycle TimeCL* = 210 1000 7.5 1000 10 100010 1000 CL* = 3t CK 5 1000 6 1000 7 10007 1000CLK High Levelt CH 2 2 2 29 CLK Low Level t CL 2 2 2 29 Access Time from CLKCL* = 2 - 6 6 6CL* = 3 t AC4.5 55.5 5.5 10 Output Data Hold Time t OH 2 2 2 2 10 Output Data HighImpedance Time t HZ 2 5 2 6 2 7 2 7 7 Output Data Low Impedance Time t LZ 0 0 0 0 10 Power Down Mode Entry Timet SB 0 5 0 6 0 7 0 7 Transition Time of CLK (Rise and Fall) t T 1 1 1 1 Data-in-Set-up Time t DS 1.5 1.5 1.5 1.5 9 Data-in Hold Time t DH 1 1 1 1 9 Address Set-up Time t AS 1.5 1.5 1.5 1.5 9 Address Hold Time t AH 1 1 1 1 9 CKE Set-up Time t CKS 1.5 1.5 1.5 1.5 9 CKE Hold Time t CKH 1 1 1 1 9 Command Set-up Time t CMS 1.5 1.5 1.5 1.5 9 Command Hold Timet CMH 1 1 11nS 9AC Characteristics and Operating Condition, continued-5 -6 -7-7SPARAMETER SYM. MIN. MAX. MIN.MAX.MIN.MAX.MIN.MAX.UNIT NOTESRefresh Time t REF 64 64 64 64 mS Mode Register SetCycle Time t RSC 10 14 14 14 nS Exit self refresh to ACTIVE Commandt XSR 70 72 75 75 nSNotes:1.Operation exceeds “Absolute Maximum Ratings” may cause permanent damage to the devices.2. All voltages are referenced to V SS‧2.7V~3.6V power supply for -7/-7S speed grade.3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values of t CK and t RC .4. These parameters depend on the output loading conditions. Specified values are obtained with output open.5. Power up sequence please refer to "Functional Description" section described before.6. AC Test Load diagram.7. t HZ defines the time at which the outputs achieve the open circuit condition and is not referenced to output level.8. These parameters account for the number of clock cycles and depend on the operating frequencyof the clock, as follows the number of clock cycles = specified value of timing/ clock period (count fractions as whole number)(1)t CH is the pulse width of CLK measured from the positive edge to the negative edge referenced to V IH (min.).t CL is the pulse width of CLK measured from the negative edge to the positive edge referenced to V IL (max.).(2)A.C Latency Characteristics9. Assumed input rise and fall time (t T ) = 1nS.If tr & tf is longer than 1nS, transient time compensation should be considered,i.e., [(tr + tf)/2-1]nS should be added to the parameter( The t T maximum can’t be more than 10nS for low frequency application. )10. If clock rising time (t T) is longer than 1nS, (t T/2-0.5)nS should be added to the parameter.10. TIMING WAVEFORMS 10.1 Command Input Timing10.2 Read Timing10.3 Control Timing of Input/Output Data10.4 Mode Register Set Cycle11. OPERATINOPERATING TIMING EXAMPLE11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge)11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge)11.5 Interleaved Bank Write (Burst Length = 8)11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge)11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3)11.8 Page Mode Read/Write (Burst Length = 8, CAS Latency = 3)11.9 Auto-precharge Read (Burst Length = 4, CAS Latency = 3)11.10 Auto-precharge Write (Burst Length = 4)11.11 Auto Refresh Cycle11.12 Self Refresh Cycle11.13 Bust Read and Single Write (Burst Length = 4, CAS Latency = 3)11.14 Power-down Mode11.15 Auto-precharge Timing (Write Cycle)11.16 Auto-precharge Timing (Read Cycle)11.17 Timing Chart of Read to Write Cycle11.18 Timing Chart of Write to Read Cycle11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command)11.20 Timing Chart of Burst Stop Cycle (Precharge Command)11.21 CKE/DQM Input Timing (Write Cycle)11.22 CKE/DQM Input Timing (Read Cycle)Publication Release Date:Mar. 31, 200812. PACKAGE SPECIFICATION12.1 54L TSOP (II)-400 milPublication Release Date:Mar. 31, 2008Publication Release Date:Mar. 31, 200813. REVISION HISTORYVERSION DATEPAGEDESCRIPTIONP01 Sep. 14, 2007 All Create preliminary data sheet A01 Dec. 12, 2007 AllInitial formal data sheetA02Dec. 24, 20073, 4, 13, 14,15, 16Remove -6I speed grade13Revise overshoot/undershoot pulse widthBefore V IH (max.) = V CC /V CCQ +1.2V for pulse width < 5 nS After V IH (max.) = V CC /V CCQ +1.2V for pulse width < 3 nS Before V IL (min.) = V SS /V SSQ -1.2V for pulse width < 5 nS After V IL (min.) = V SS /V SSQ -1.2V for pulse width < 3 nSA03Jan. 29, 20083, 4, 15Revise -7/-7S parts AC parameter CLK cycle time of CL2 t CK value from 7nS to 7.5nSA04Feb. 26, 200815Revise -6 part AC parameter Access Time from CLK of CL2 t AC value from 5.5nS to 6nS13Revise overshoot/undershoot pulse widthBefore V IH (max.) = V CC /V CCQ +1.2V for pulse width < 3 nS After V IH (max.) = V CC /V CCQ +1.5V for pulse width < 5 nS Before V IL (min.) = V SS /V SSQ -1.2V for pulse width < 3 nS After V IL (min.) = V SS /V SSQ -1.5V for pulse width < 5 nSA05Mar. 31, 200815Revise -7/-7S parts AC parameter CLK cycle time of CL2 t CK value from 7.5nS to 10nSImportant NoticeWinbond products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for other applications intended to support or sustain life. Further more, Winbond products are not intended for applications wherein failure of Winbond products could result or lead to a situation wherein personal injury, death or severe property or environmental damage could occur.Winbond customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Winbond for any damages resulting from such improper use or sales.。
JUMO设备型号说明书
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Accessories for Programmers, Thermostats, Microstats and Controllers
Device designation
DICON 400/500 DICON 401/501
Data Sheet 70.3570 Data Sheet 70.3580
Software programs1 (multilingual)
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Setup program, program editor and Startup
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Setup program
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Setup program
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Setup program
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Program editor
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Setup program and program editor
e-mail:
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JUMO Instrument Co. Ltd. JUMO House Temple Bank, Riverway Harlow, Essex CM 20 2TT, UK Phone: +44 1279 635533 Fax: +44 1279 635262 e-mail: sales@ Internet:
eTRON T eTRON M
Data Sheet 70.1050 Data Sheet 70.1060
eTRON M100
Data Sheet 70.1061
iTRON 04 B
Data Sheet 70.2050
mTRON
Data Sheet 70.4010 ... 45
AVXX16中文资料
GENERAL DESCRIPTION:The AVH316B, AVH316C, AVH316D, AV0716C, AV0716D, AV1416D, AV2116A, AV2816A is a single-chip synthesizing CMOS VLSI that can synthesize voice up to 3.5,7,14,21,28 seconds using APLUS qualified coding algorithm (LOGPCM).Customer speech data will be edited and programmed into ROM by changing one mask during one mask during the device fabrication.FEATURES:1. Single power supply can operate from2.4v through 5v.2. The total voice duration is about3.5,7,14,21,28,42 seconds could be partitioned up to 16 voice sections.Each voice section could have 4 playing lengths; the longest one is the origional voice+mute length.3. Voice + mute length could up to 22 seconds ( 11 seconds in AVH316 ) (6k sampling rate) for each voice section.4. One 112 voice-steps table, could be partitioned up to 16 subtables of steps.5. 5 mask option of playback speed : 1> 4.3K ; 2> 5.0K ; 3>6.0K ; 4>7.5K ; 5> 10.0K ( Hz )6. 1 trigger input (TG): with resistive schmitt input (270K---1M) for CDS interface.sequential function : once the input was triggered sequentially the device will response by one subtable of voice_stepsequentially and cyclically , from subtable_m ( m= 1 -16 ) to user defined subtable_n ( n= 1 - 16 ) .random function : Once the input was trigger , the device will response from subtable_m ( m: 1 - 16 ) to subtable_n( n: 1 - 16 ) at random .snooze function : use 2 subtables : 1st stores ringing voice , playing when time's up.2nd stores ( greeting sound + ) snooze time .7.Has two debounce time : 10 ms, 50 us. with following mask optionA>50us B>10ms C>IO1(VDD-50us,GND-10ms) D>IO2(VDD-50us,GND-10ms) E>IO3(VDD-50us,GND-10ms)C,D,E;could only be selected when IO1,IO2,IO3 are mask_option as control input .8. Automatic Rosc selection : enable - the device will use external Rosc if it has external Rosc ; the device will use internal Roscautomatically if it hasn't external Rosc . ( It must be determined before operation )disable - use external Rosc only . IO2 - VDD : disable GND : enableInternal Rosc options : (mask option)For VH316B ,AVH316C ,AVH316D ,AV0716C ,AV0716D ,AV1416D ,AV2116A , AV2816A :playbackA B C D E F G H I J K L Mspeed(khz)4.38.98.67.97 6.35.8 5.4 5.1 4.7 4.3 4.1 3.9 3.6510.3109.28.27.3 6.8 6.3 5.9 5.55 4.8 4.6 4.2612.412119.88.88.17.57.1 6.66 5.7 5.557.515.51513.812.31110.19.48.98.37.57.1 6.9 6.31020.72018.316.314.713.512.511.811109.59.28.39. Playing mode :EDGEL/LEVEL , HOLD/UNHOLD , RETRIGGER/IRRETRIGGER with following mask options :EDGE/LEVEL HOLD/UNHOLD RETRIGGERING/IRRETRIGGERA>EDGE A>HOLD A>IRRETRIGGERB>LEVEL B>UNHOLD B>RETRIGGERC>IO1(VDD-edge.GND-level) C>IO1(VDD-hold,GND-unhold) C>IO1(VDD-irretrigger,GND-retrigger)D>IO2(VDD-edge.GND-level) D>IO2(VDD-hold,GND-unhold) D>IO2(VDD-irretrigger,GND-retrigger)E>IO3(VDD-edge.GND-level) E>IO3(VDD-hold,GND-unhold) E>IO3(VDD-irretrigger,GND-retrigger)C, D, E could only be selected when IO1,IO2,IO3 are mask_option as control input .10. 3 I/O PINS WITH FOLLOWING OPTIONS:* IO1 * IO2 * IO3A>COUT B>STOPH C>STOPL A>PWM1 B>STOPH C>STOPL A>PWM2 B>STOPH C>STOPLD>BUSYH E>BUSYL F>6HZ D>BUSYH E>BUSYL F>6HZ D>BUSYH E>BUSYL F>6HZG>DYNA1/4 H>DYN2/4 I>DYN3/4 G>DYNA1/4 H>DYN2/4 I>DYN3/4 G>DYNA1/4 H>DYN2/4 I>DYN3/4J>USED AS CONTROL INPUT J>USED AS CONTROL INPUT J>USED AS CONTROL INPUTItem_F : 0.75Hz or 1.5Hz or 3Hz or 6Hz(mask option)Item_B~I : with one subtable enable status option for IO1, IO2, IO3.COUT : 3 current output levels, with 4 mask options (1.5mA;3mA;4.5mA;IO3<GND-3mA,VDD-4.5mA>).PWM1, PWM2 : must be selected on the same time ,direct driving buzzer or 8 or 32 or 64 ohm speaker.STOPH, STOPL : 40 ms high/low output when device stop playing.(drive 1.8 mA,sink 10mA;3v).BUSYH, BUSYL : high/low output during device playing (drive 1.8 mA,sink 10mA;3v).6Hz/3Hz, DYNA1/4, 2/4, 3/4 : LED driving. (drive 1.8 mA, sink 10mA;3v)Used as control input : internal pull GND (0.5uA,3V)For all the IO options : the dynamic should choice same level.If IO2 and IO3 are both at 6Hz(3Hz), they will flash alternatively.When used as control input, they could be used to control following options by bonding or toggle switch.EDGE/LEVEL, HOLD/UNHOLD, RETRIGGER/IRRETRIGGER, DEBOUNCE 10ms/50us㆒般規格:AVH316B ,AVH316C ,AVH316D ,AV0716C ,AV0716D ,AV1416D ,AV2116A,AV2816A 乃㆒單晶片CMOS VLSI語音合成器,它以LOGPCM編碼方式,合成長達3.5、7、14、21、28、42 秒之語音。
星级酒店弱电系统报价单
二、现场直接数字式控制器(DDC)
三、现场末端装置(传感器及执行机构)
小计
电视监控系统
序号
1 2 3 4 5 6
设备名称 数字硬盘录像机 液晶显示器 硬盘 室内一体化高速半球型摄像机 高清彩色红外半球 电梯专业半球摄像机
规格型号 HDB-DVR416E 19寸 2T HDB-527PCB-3 HDB-701MM HDB-9003WCB
系统调试
5
6
7
8
9
10
11
12
大口径—1.2m MW-MOD-9631 MW-BLE-L32-*/* 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) SYV-75-5
明月谷酒店楼控系统序号名称规格型号品牌数量单位单价合计一监控站楼宇自控系统设备中央站p4tdell打印机epson1600kepson不间断电源ups05kvasantakinsightsoftware571010siemens通讯接口trunkinterfaceii538675siemensddcmec200mec200siemensddcmec201mec201siemens549210siemens549214siemens10定做11定做三现场末端装置传感器及执行机构12风道温湿度空气品质传感器qpm2162siemens13液位传感器mac3mac14一氧化碳传感器cmd5b2000greystone15风道温湿度传感器qfm2160siemens16风道温度传感器54433918aqm2000siemens17防冻开关qaf813siemens18压差开关qbm813siemens19gbb1611esiemens20gbb1311esiemens21vvg4425sqs65alg252siemens22cvvi414025siemens23cvvi415040siemens24vvf4180skc62siemens25vvf4190skc62siemens26包塑金属软管20国产27网络线awg18国产28电源线rvv3x15国产29信号线rvvp3x10国产30信号线rvvp2x10国产31信号线rvv2x10国产小计电视监控系统序号设备名称规格型号品牌数量单位单价合计数字硬盘录像机hdbdvr416e液晶显示器三星11硬盘2t希捷11室内一体化高速半球型摄像机hdb527pcb3高清彩色红外半球hdb701mm电梯专业半球摄像机hdb9003wcb彩色红外高清摄像机hdb5680yc视频矩阵hdbd2025a25616控制键盘hdbd207810视频分配器hdbd1632v11高清彩色逐行监视器hdbcm21aa12电视墙及操作台1611定制13电源12v2a国产14214球机电源24v2a国产26156kw16视频线syv755国产1100017电源线rvv210国产300018控制线rvvp210国产1100国产40019管材国产400021系统调试22小计电子巡更系统感应巡更棒0compa1602ocom通讯座0compbu320ocom地点识别卡pid2ocom120人员识别卡ocom5
SL2.2S规格书,usb HUB大全,替换FE1.1S,GL850,GL852,PL2586
USB2.0 HUB控制器集成电路USB 2.0 HIGH SPEED 4-PORT HUB CONTROLLERSL2.2s数据手册Data Sheet内容目录第一章管脚分配 (3)1.1 SL2.2S管脚图 (3)1.2 SL2.2S管脚定义 (3)第二章 功能叙述 (5)2.1综述 (5)2.2指示灯 (5)2.2.1单灯方案 (5)2.2.2多灯方案 (6)2.2.3 LED指示定义 (6)2.3过流保护 (6)2.4充电支持 (6)2.5I2C接口 (7)2.6EEPROM设置 (7)第三章电气特性 (8)3.1极限工作条件 (8)3.2工作范围 (8)3.3直流电特性 (8)3.4HS/FS/LS电气特性 (8)3.5ESD特性 (8)附录一封装 (9)表格目录表格1: 端口LED定义 (6)表格 2 : ACTIVE LED定义 (6)表格3:EEPROM数据结构定义 (7)表格4: 最大额定值 (8)表格5: 工作范围 (8)表格6: 直流电特性 (8)插图目录图1:SSOP28 管脚图 (3)图2:单灯方案配置 (5)图3: 5灯方案配置 ............................................................................... (6)图 4:附录 封装图 ................................................................................... .9第一章管脚分配1.1SL2.2s管脚图图1:SSOP28 管脚图1.2SL2.2s管脚定义管脚名称28Die IO类型定义Pin#VSS 1 P 芯片地XOUT 2 O晶振PAD XIN 3 IDM4 4 B下行口4的USB信号DP4 5 BDM3 6 B下行口3的USB信号DP3 7 BDM2 8 B下行口2的USB信号DP2 9 BDM1 10 B下行口1的USB信号DP1 11 BVDD18 12 P 模拟1.8vVDD33 13 P 模拟3.3v - 14 NCUDM 15 B上行口的USB信号UDP 16 BRESET_N 17 I,Pu 芯片外部复位输入- 18 NCPSELF 19 I,Pu 高为自供电,低为总线供电VDD5 20 P 5v输入VDD33 21 P 3.3v输出DRV 22 B,Pu 点灯驱动信号LED1 23 B,Pu 点灯驱动信号LED2 24 B,Pu 点灯驱动信号PWRN 25 B,Pu 下行口电源输出控制,低有效OVCRN/SDA 26 B,PuI2C SDA数据线,内部上拉;芯片初始化完成后作为过流保护输入脚,低有效SCL 27 B,Pu I2C SCL时钟输出VDD18 28 P 数字1.8v注释:O,输出;I 输入;B 双向;P 电源/接地;Pu 上拉;Pd 下拉;NC 悬空;第二章 功能叙述2.1综述SL2.2s 是一颗高集成度,高性能,低功耗的USB2.0集线器主控芯片;该芯片采用STT 技术,单电源供电方式,芯片供电电压为5v , 内部集成5V 转3.3V,只需在外部电源添加滤波电容;芯片自带复位电路,低功耗技术让他更加出众。
珠海市海威尔电器有限公司 HCES1 系列 1-6W 电源模块 商品说明书
选型表产品特性封装形式:SIP工作温度范围:-40℃-105℃ 隔离电压:3000VDC 效率:最高效率可达85% 符合标准:国际标准引脚方式应用领域:电力、工控、通信、物联网、汽车等输入特性输出特性24VDC输出--5--纹波噪声20MHz带宽--60150mVp-p 温度漂移系数满载--±0.03--%/℃短路保护可持续,自恢复输出特性物理特性外壳材料黑色阻燃耐热塑料(UL94V-0)封装尺寸19.65*6.00*10.16mm重量 2.4g冷却方式自然空冷EMC特性EMI 传导骚扰CISPR32/EN55032CLASS B(推荐电路见图5)辐射骚扰CISPR32/EN55032CLASS B(推荐电路见图5)EMS静电放电IEC/EN61000-4-2Contact±8KV perf.Criteria B产品特性曲线图外观尺寸/建议印刷版图电路设计与应用1.典型应用若要求进一步减小输入输出纹波,可在输入输出端连接一个电容滤波网络,应用电路如图4所示。
但应注意选用合适的滤波电容。
若电容太大,很可能会造成启动问题。
对于每一路输出,在确保安全可靠工作的条件下,推荐容性负载值详见表1。
2.EMC典型推荐电路见图53.输出负载要求为了确保该模块能够高效可靠的工作,使用时,其输出最小负载不能小于额定负载的10%。
若您所需功率确实较小,请在输出端并联一个电阻(电阻消耗功率与实际使用功率之和大于等于10%的额定功率)标注:输入电压不能超过所规定范围值,否则可能造成永久性不可恢复的损坏;如没有特殊说明,本手册的参数都在25℃,湿度40%~75%,输入标称电压和输出纯电阻模式满负载下测得;所有指标测试方法均依据本公司企业标准。
珠海市海威尔电器有限公司公司地址:广东省珠海市高新区创新海岸科技二路10号电话:************销售邮箱:*******************技术支持邮箱:*****************。
铝电合成电容器说明书
本产品目录之规格如有变更恕不另行通知(CAT. 2018C1)137RZW 系列特长/用途‧105℃, 4,000 ~ 10,000小时寿命保证‧低等效串联电阻(ESR),适用交换式电源供应器(SPS) ‧制品尺寸较小并可承受大纹波电流 ‧符合RoHS 指令套管与标示颜色:黑色/金色规格表寸法图制品各项寸法单位:毫米φD 5 6.3 8 10 12.5 16 18 P 2.02.53.55.0 5.07.57.5 φd 0.50.60.8α L<20: 1.5, L ≧20: 2.0β0.5制品尺寸如为12.5×16、16×16、16×20、18×16、18×20、18×25适用下列制品尺寸图:引线型容许纹波电流:毫安/均方根值(mA/rms),100k赫兹(Hz), 105℃制品尺寸与容许纹波电流一览表阻抗值:欧姆(Ω)/最大值,100k赫兹(Hz), 20℃本产品目录之规格如有变更恕不另行通知(CAT. 2018C1)138容许纹波电流:毫安/均方根值(mA/rms),100k赫兹(Hz), 105℃制品尺寸与容许纹波电流一览表阻抗值:欧姆(Ω)/最大值,100k赫兹(Hz), 20℃产品编码说明RZW系列470微法拉± 20% 16V 长脚8φ×15L 无铅引线与PET套管RZW 471 M 1C BK - 0815系列额定静电容量额定静电容量容许误差值额定电压引线加工/包装型式胶盖型式制品尺寸制品引线与套管材质注:如需了解更详细之介绍,请参阅目录第13页”引线型产品编码说明”。
引线型本产品目录之规格如有变更恕不另行通知(CAT. 2018C1) 139。
EM7164SU16W-70L中文资料(Emerging Memory)中文数据手册「EasyDatasheet - 矽搜」
y
+
30
(0.0)
x
器件代码
(EM716XSU16)
31 32
3
芯片中文手册,看全文,戳
初稿
EM7164SU16W系列
1Mx16单管 RAM
绝对最大额定值 参数
任何引脚相对于VSS电压 供应相对Vss 电压Vcc 功耗 储存温度 工作温度
1)
符号
V IN, V OUT V CC , V CCQ PD T STG TA
(I SB1 ,最大)
(I CC2 ,最大)
EM7164SU16W
-25 oC至85 oC
2.7V至3.3V
70ns
80uA
25mA
功能块图 /ZZ /CS /UB /LB /WE /OE
自刷新 控制 控制
列选择
LOGIC
地址
内存阵列 行选择
A0~A19
解码器
1M X 16
DQ0~ DQ15
Din/Dout BUFFER I / O电路
额定值
-0.2到V CCQ +0.3V -0.2 2) 至3.6V 1.0 -65至150 -25至85
Unit
V V W
oC oC
1.
强调超过上述"绝对最大额定值"可能会对设备造成永久性损坏.功能
操作应仅限于推荐工作条件.暴露在绝对最大额定值条件下长时间可能会影响其可靠性.
2.冲在断电:-1.0V情况下,脉冲宽度为20ns
功能说明 CS
H X X L L L L L L L L
ZZ
H L H H H H H H H H H
OE
X X X H H L L L X X X
Vivitek DU719EZAA 高效能雷射光源工程機 使用手冊说明书
V1 - 10282016 高效能雷射光源工程機Vivitek DU719EZAAHigh Performance WUXGA Large Venue Laser Projector with HDBaseT™ Connectivity, MHL Compatibility and 3D ReadyFeatures最先進的高亮度雷射光源工程用投影機 出色的亮度和色彩均勻性雷射光源可使用 20,000 小時以上免換燈泡可高達9,000 流明高亮度以及 20,000:1 超高對比度 高解析度WUXGA可交換式鏡頭設計可便利規劃及安裝於各種環境場地 置中鏡頭便利安裝施工水平及垂直鏡頭位移易於調整及安裝施工4角梯形校正角調整可以輕鬆校正扭曲和梯形圖像問題多種不同的輸入介面: HDMI v1.4b, MHL/HDMI 1.4b, DVI-D, Component (5 BNC) (RGBHV), VGA-In, VGA-Out, HDBaseT/LAN (Shared)支援3D DLP® Link™ and HDMI 1.4藍光技術 支援RS-232 OUT 多埠多台影像連結3D同步訊號支援 IR (infrared) 3D 訊號輸出提供便利的網路控制介面提供七顆不同交段鏡頭供選購規劃Photos©2016 Vivitek. Vivitek is a trademark of Delta Electronics, Inc. Other trademarks are theproperties of their respective owners. Values, weights and dimensions shown are approximate. Errors and omissions accepted. Specifications are subjection to change without prior notice .。
优光W461项目机产品介绍说明书
W461Bright Powerful and Business ReadyBright WXGA projector - 5000 ANSI LumensUltimate Control - Crestron, Extron, AMX, PJ-Link and Telnet LAN commands Easy connectivity – 2x HDMI + MHL, RJ45, USB Power, 12V TriggerQuality audio featuring 10W speakerGive hassle free and cable free presentations from aUSB stick using the built-in photo and document viewer.You can even give presentations wirelessly from a mobiledevice using the optional wireless dongle.Speci ficationsDisplay/imageDisplay technology DLP ™Resolution WXGA (1280x800)Brightness 5,000 lumensContrast ratio 20,000:1Native aspect ratio 16:10Aspect ratio - compatible 4:3,16:9Keystone correction -horizontal+/-25°Keystone correction -vertical+/-30°Horizontal scan rate 15.375 ~ 91.146KhzVertical scan rate 24 ~ 85(120 for 3D)HzUniformity 75%Screen size 0.94m ~ 5.19m (37.2" ~ 204.2") diagonalLamp infoLight source type LampLamp watts 285Lamp life hours (up to)3500 (Bright), 4500 (Dynamic), 3500 (Eco), 4500 (Eco+)OpticalThrow ratio 1.28:1 ~ 1.54:1Projection distance (m) 1.23m - 5.63mZoom 1.2Zoom type ManualFocal length (mm)16.87 ~ 21.87Native o ffset 111%ConnectivityConnections Inputs 1 x HDMI 1.4a 3D support, 1 x HDMI 1.4a 3D support + MHL, 1 x VGA (YPbPr/RGB), 1 x Audio 3.5mm,1 x USB-A readerOutputs 1 x VGA (YPbPr/RGB), 1 x Audio 3.5mmControl 1 x USB-A wireless, 1 x RS232, 1 x RJ45, 1 x 12V trigger, 1 x mini USB mouse/serviceGeneralNoise level (typical)29dBNoise level (max)31dBPC compatibility FHD, UXGA, SXGA, WXGA, HD, XGA, SVGA, VGA, Mac2D compatibility NTSC M/J, 3.58MHz, 4.43MHz PAL B/D/G/H/I/M/N,4,43MHz SECAM B/D/G/K/K1/L, 4.25/4.4MHz 480i/p,576i/p, 720p(50/60Hz), 1080i(50/60Hz), 1080p(50/60Hz)3D compatibility Side-by-Side:1080i50 / 60, 720p50 / 60 Frame-pack:1080p24, 720p50 / 60 Over-Under: 1080p24, 720p50 / 603D Full 3DSecurity Security bar, Kensington Lock, Password protected interfaceOSD / display languages 25 languages: Arabic, Czech, Danish, Dutch, English, Farsi,Finnish, French, German, Greek, Hungarian, Indonesian,Italian, Japanese, Norwegian, Polish, Portuguese, Romanian,Russian, Chinese (simpli fied), Spanish, Swedish, Chinese (traditional), Turkish, VietnameseOperating conditions 5°C ~ 40°C, Max. Humidity 85%, Max. Altitude 3000mRemote control Data remote with laser and mouse functionSpeaker count 1Watts per speaker 10WIn the box AC power cord, remote control, 2x AA batteries, basic user manualOperating system compatibility Windows 7 / 8 / 8.1 / 10, MacOSX 10.9 +, Android 4.0+,iOS 8+Optional wireless models QuickCast Bundle, QuickCast starter kit, WHD200, WUSBNetworkingLAN - control YesLAN - display YesLAN - wireless networking Yes - optionalPowerPower supply 100 ~ 240V, 50 ~ 60HzPower consumption (standby)0.5W Power consumption (min)290WPower consumption (max)350WWeight and dimensionsDimensions (W x D x H)mm345 x 216 x 109Gross weight 4.13 kgNet weight 2.95 kgCopyright © 2021, Optoma and its logo is a registered trademark of Optoma Corporation. Optoma Europe Ltd is the licensee of the registered trademark. All other product names and company names used herein are for identi fication purposes only and may be trademarks or registered trademarks of their respective owners.Errors and omissions excepted, all speci fications are subject to change without notice.All images are for representation purposes only and may be simulated. 13072021061311。
MB16AWP 无线便携式显示器用户指南说明书
MB16AWP无线便携式显示器用户指南第一版2022 年 1 月版权所有 © 2022 ASUSTeK COMPUTER INC. 保留所有权利。
未经 ASUSTeK COMPUTER INC. ("ASUS") 明确书面同意,不得以任何形式或通过任何方式复制、传播、转录本手册的任何部分,包括其中介绍的产品和软件,也不得存储到检索系统中或翻译成任何语言,购买者出于备份目的而保留的文档除外。
在下列情况下,不能享受产品保修或维修服务:(1) 产品被修理、修改或改动,除非此类修理、修改或改动得到 ASUS 的书面授权;(2) 产品序列号损毁或缺失。
ASUS“按原样”提供本手册,不提供任何明示或隐含的担保,包括但不限于对于适销性或针对特定目的的适用性的隐含担保或条件。
无论在任何情况下,ASUS 及其董事成员、高级职员、员工或代理不对由于本手册或产品中存在任何缺陷或错误而导致的任何间接、特殊、偶然或必然损失(包括收益损失、业务损失、不能使用或数据丢失、业务中断等)承担任何责任,即使 ASUS 已被告知此类损失的可能性。
本手册中包含的规格和信息仅供一般性参考,可能会随时变更而无需另行通知,因此不应构成 ASUS 的承诺。
ASUS 对本手册(包括其中介绍的产品和软件)中可能存在的任何错误不承担任何责任。
本手册中出现的产品名称和公司名称可能分别是或不是相应公司的注册商标或版权,仅用于标示或解释目的,无意侵犯其所有者的权益。
ii目录 (iii)声明 (iv)安全信息 (xi)保养和清洁 (xii)中国产品回收服务 (xiii)北美可充电电池回收服务 (xiii)产品欧盟能源标识信息 (xiii)第 1 章:产品介绍1.1 欢迎使用! .....................................................................................1-11.2 物品清单.........................................................................................1-11.3 显示器简介 .....................................................................................1-21.3.1 前部概览/侧面概览 ........................................................1-2第 2 章:设置2.1 显示器竖立位置 ..............................................................................2-12.2 调整显示器 .....................................................................................2-12.3 连接线缆.........................................................................................2-22.4 打开显示器电源 ..............................................................................2-22.5 执行无线投影..................................................................................2-32.6 将显示器连接到 Internet ................................................................2-42.7 更新无线投影固件 ..........................................................................2-52.8 通知 ................................................................................................2-6第 3 章:一般说明3.1 OSD(屏幕显示)菜单...................................................................3-13.1.1 如何重新配置 ..................................................................3-13.1.2 OSD功能介绍.................................................................3-23.2 规格摘要.........................................................................................3-93.3 外形尺寸.......................................................................................3-113.4 故障排除(常见问题) .................................................................3-123.5 支持的运行模式 ............................................................................3-13iii联邦通信委员会声明本设备符合 FCC 规则第 15 部分的要求。
SOYAL AR-716EV2 716Ei 说明书
AR-716EV2 (RS-485)AR-716Ei (10 Base-T)Multi-door Networking ControllerUser’s GuideVersion: 7.2May 6, 2004Table of Contents1. Introduction --------------------------------------------------------------------------------------------- 22. Installation --------------------------------------------------------------------------------------------- 33. Software Setting --------------------------------------------------------------------------------------------- 43.1 701 Server software setting of external weigand reader --------------------------------- 43.2 Door number setting of 701E Parameter --------------------------------- 43.3 DI Input V.S. Relay Output Connection Setting of 701E Parameter --------------- 53.4 Weigand reader LED and Buzzer indicators --------------------------------- 5Setting --------------------------------- 6 Software4. AR-716E-IO4.1 Set relay time --------------------------------- 64.2 AR-716E-IO hardware installation --------------------------------- 64.3 Push Button & Lock installation ---------------------------------75. AR-727i Configuration --------------------------------- 85.1 Reset to Factory Default of the AR-727i --------------------------------- 8--------------------------------- 85.2 DIPSettingsSwitch5.3 AR-727i’s contains three LED indicators, as described in the following table --- 85.4 How to set IP address on the AR-716Ei --------------------------------- 9--------------------------------- 95.4.1 Get IP address by using Net727i software5.4.2 Get IP address by DHCP Server --------------------------------- 135.4.3 Get IP address by AR-801CM (COM Port) connects to PC --------------------------- 166. Installation diagram --------------------------------------------------------------------------------------- 19AR-721H networking installation --------------------------------- 196.1 AR-716Eiand6.2 AR-716EV2 and AR-721H networking installation --------------------------------- 206.3 Points for attation --------------------------------------------------------------------------------- 213. Software Setting3.1 701 Server software setting of external weigand reader How to enter?Step1: Click the 701 Server Icontwice to access the Server on the down right corner of thewindows. Step2: Click Tool Bar Icon(701E parameter) for the windows.Step3: Enter networking controller node ID, then click “Read”. Step4: Click the page of Door Number.3.2 Door number setting of 701E Parameter1. Reader 1-8 is the door number of the CH1 RS-485 readers. (The CH1 can connect to on-line reader ID node 1-8).2. Reader 9-16 is the door number of the CH2 RS-485 readers. (The CH2 can connect to on-line reader ID node 9-16).3. ID Node of WG reader port 1 is fixed to no.17 on the 716EV2/Ei PCB. If enable anti-pass-back, ID Node 17 is fixed to be in door.4. ID Node of WG reader port 2 is fixed to no.18 on the 716EV2/Ei PCB. If enable anti-pass-back, ID Node 18 is fixed to be out door.Note: The above Door number can be both changeable.3123456781286414216832Node00100212AR-716EiPower ResetChannel 2 RX Channel 2 TXChannel 1 RX Channel 1 TX Host RXHost TXBatteryPORT1JP4CN5D10D9D11K4RELAY K3D12RELAY JP3CN3K2JP2RELAYRELAY K1JP12CN1CN2PORT2Busy1JP53O NONONONONAR-727i3.3 DI Input V.S. Relay Output Connection setting of 701E Parameter 1. The DI.2 is exit button input of reader port 1 and the K1 is open door relay.(1) Choose “DI 2” under the menu item.(2) Click “K1”.2. The DI.3 is exit button input of reader port 2 and the K2 is open door relay.(1) Choose “DI 3” under the menu item.(2) Click “K2”.Note: Active second can be set only when the window is DI 1.3.4 Weigand reader LED and Buzzer indicators1. LED light green and one beep sound mean acknowledge, LED light green twice and two beep sounds mean not acknowledge.2. In anti-pass-back access mode, LED light green five times and five beep sounds mean violates access function.3. When access modes have entering user code, after flash card, LED light green four times and four beep sounds mean that reader wait for being entered the 4-digit user code.4. AR-716E-IO Software Setting (Optional)4.1 Set relay timeStep1: Click the page of Reader Relay V.S. 701E RelaysStep2: Enter relay time in the blank column. Range from 0 to 60,000. (Default 7 sec.)Step3: Press [ Write ].4.2 AR-716E-IO hardware installationStep1: Take away each screw on the top left and on the down left of AR-716EV2 \ 716Ei PCB board. Step2: Screw copper column to fix AR-716E-IO PCB board.Step3: Then, screw tightly copper column by using screw before take away.Step4: Connect plug DB1 of AR-716E-IO to socket DB1 of AR-716EV2 \ 716Ei PCB board.Connect plug DB2 of AR-716E-IO to socket DB2 of AR-716EV2 \ 716Ei PCB board.4.3 Push Button & Lock installation5. AR-727i Configuration5.1 Reset to Factory Default of the AR-727iPress RESET button more than 5 seconds,then AR-727i will restore to Factory Default value. IP Address : 192.168.001.127 Gateway IP : 192.168.001.254 Subnet Mask : 255.255.255.000 Serail Port : 9600,N,8,1 TCP Port : 1621 Password : none5.2 DIP Switch Settings5.3 AR-727i’s contains three LED indicators, as described in the following tableDescription Switch 1 DHCP Function AR-727i support Auto Configuration of the IP and gateway addresses and subnet mask function, but must make sure the DHCP Server is active. Switch 2 Serial Setup Mode LED Name LED Color LED Function Yellow Media is connected. Link Off Media is not connected. Green 10 Mbps Ethernet connection. ACT Off Ethernet cable is disconnected, or has a short. Red Configuration Setup. BUSY Off No.5.4 How to set IP address on the AR-716Ei5.4.1 Get IP address by using Net727i softwareUsually, the network of some company don’t built-in the DHCP Server. Therefore, we can use the following method to get default IP address and modify it. The steps as follows:Step 1: Press RESET button more than 5 seconds, The BUSY LED will flash 5 times, then AR-727i will restore to Factory Default value.Step 2: Open explorer, click “My Network Places” and press right key to open Properties.Step 3: Click “Local Area Connection” and press right key to open Properties.Then double click Internet Protocol (TCP/IP) to open Properties.Step 4: Click ”Use the following IP address” and enter IP address 192.168.001.64, Subnet mask 255.255.255.0Step 5: Click “ok” to exit.Step 6: Install Net727i.exe into your PC and run Net727i.exe(Start → Programs → soyal software → Net727i )Step 7: Click “Get” to get default Local IP Address, Gateway, Netmask and TCP Port.Step 8: Change new address and parameters then click “write”.Step 9: switch DIP SW-1 and SW-2 to “OFF” position.Remark:(1) How to know PC’s IP Address? (Win98)Start → execute → enter “winipcfg”.(2) How to know PC’s IP Address? (Win2000)Start → Programs → Accessories → Command Prompt → C:\> ipconfig(3) Please see detailed parameter in next page:Setting Value Notes Necessity Local IP Address 192.168.001.127 Defines own IP Address of theAR-727CMRequiredLocal Gateway IP Address 192.168.001.254 Defines the IP Address of the defaultgatewayRequiredLocal Subnet Mask 255.255.255.000 Defines the IP Address range for thelocal network segmentRequiredTCP Port 1621 The TCP port that other devices mustuse to contact this device. To avoidconflicts with standard TCP ports.RequiredMAC Address 00.E0.4C.00.00.50The MAC (Media Access Control)address is a unique identifier set at thefactory.-Force Transmit time 5 Forces AR-727CM device’s TCP/IPprotocol software to try to pack serialdata received during the specified timeinto the same data frame.OptionalForce Transmit Bytes 32 Defines the amount of data in theserial, Ethernet buffer at which thebreak condition will be generated andthe contents of buffer will be sent outvia the Ethernet port.OptionalLock Remote IP Address - Allows contact with only the specifiedremote IP address.OptionalLock Serial Port (Free Run or Freeze Over) - To avoid the hacker use this IP tointercept data when Remote IPAddress doesn’t receive data.OptionalSetup Password none Console password Optional Serial Port Speed 9600 Changes current baud rate of theAR-727CM’s serial port (from 2400bpsto 57600bps).RequiredTCP Auto Disconnect Time(Second) 60 This device automatically closes TCPconnection if there is no TCP activityfor the given time.OptionalSerial Port Hardware Handshaking (RTS/CTS) - An exchange of signal over specificwires which each device indicates itsreadiness to send or receive data.OptionalDHCP - Selectingtheenable option allowsDHCP to automatically assign theAR-727CM’s IP address.Optional5.5.2 Get IP address by DHCP Server:AR-727i support Auto Configuration of the IP and gateway addresses and subnet mask function, but must make sure the DHCP Server is active. The steps as follows:Step 1: Power off.Step 2: PCB diagram as follows by using DHCP Function.Switch DIP SW-1 to “ON” position.Switch DIP SW-2 to “OFF” position.Switch Jumper J3, J4 and J5 to Net position.No IC Chip in the U3 position.Step 3: Power on. In begging state the ACT LED will flashing, after IP has got ACT LED will off and auto save the new IP address to EEPROM.Step 4: Power off.Step 5: Change communication IC Chip from the “U2” position to the “U3” position.Step 6: Then, Switch DIP SW-1 to “OFF” position and Switch DIP SW-2 to “ON” position.( return to Serial Setup Mode)Step 7: Connect AR-801CM to the HOST of the PCB.Step 8: Power on.Step 9:To modify parameter on the AR-727i through the Hyper-Terminal function of the Window.(Start → Programs → Accessories → Communication → Hyper Terminal)Step 10: Click “Hyper-Terminal”. Step 11: key-in any temporary name.Shown as follows: It is not important matter.Step 12: Choose which COM port that Step 13:Set Port Settings to 9600, 8, None, 1, AR-801CM connect and click OK to exit. None and click “OK” to save.Step 14: AR-727i already gets IP address now shown as follows:Note that save it after set all parameters.Step 15: Power off. Then switch DIP SW-2 to “OFF” position, take away communication IC Chip on the U3 position of the PCB and AR-801CM.5.5.3 Get IP address by AR-801CM (COM Port) connects to PCAt first, PCB diagram as follows and Connect AR-801CM to the HOST of the PCB:Switch DIP SW-1 to “OFF” position.Switch DIP SW-2 to “ON” position. (Serial Setup Mode)Switch Jumper J3, J4 and J5 to RS-485 position.Make sure that have communication IC Chip in the U3 position.Step 1: To modify parameter on the AR-727i through the Hyper-Terminal function of the Window.(Start → Programs → Accessories → Communication → Hyper Terminal)Step 2: Click “Hyper-Terminal”. Step 3: key-in any temporary name.Shown as follows: It is not important matter.Step 4: Choose which COM port that Step 5:Set Port Settings to 9600, 8, None, 1, AR-801CM connect and click OK to exit. None and click “OK” to save.Step 6: AR-727i already gets IP address now shown as follows:Step 7: Please refer above item and enter item on the so that set all parameters.Step 8: Note that enter item 6 on the to save parameter after finishing to set parameter. Step 9: Then switch DIP SW-1 and SW-2 to “OFF” position.6. Installation diagram6.1 AR-716Ei and AR-721H networking installation6.2 AR-716EV2 and AR-721H networking installation6.3 Points for attention1. Please use the following installation method, it is correct.2. Don’t use the following installation method, it will cause communication error.3. We suggest using the following cable in RS-485 communication。
华视伟业55寸触摸一体机参数规格书
P 外设接口 S 电 支持操作系统 脑
其他
四个 USB 2.0 端口,一个音频线路输入、一个音频线路输出、一个网络接口、HDMI 输出 Windows 7 , Windows XP , Windows Vista 安装操作系统及常用软件及教学所需的有关软件,相关软件能免费升级,具有系统还原功能
功 整机寿命 耗 电源要求
芯片组
Intel 22 纳米
内存 4G 硬盘 128G 固态或 500G 机械 网络接口
有线 (无线 150M WIFI)
Realtek ALC622 音频编码解码器、支持 6 声道(5.1 音频)
华视伟业(深 圳)科 技 有 限 公 司
Fvasee Albert ( ShenZhen ) Technology Co.,LTD
细节图
华视伟业(深 圳)科 技 有 限 公 司
Fvasee Albert ( ShenZhen ) Technology Co.,LTD
外观尺寸:
华视伟业(深 圳)科 技 有 限 公 司
Fvasee Albert ( ShenZhen ) Technology Co.,LTD
1显示类型led最大可视角度178视频制式palntsc物理分辨率1920x1080全高清输入端口路vga音频输出端口嵌入方式内置红外触摸屏通讯端口usb书写材质4mm全钢化防暴玻璃感应方式嵌入式红外影像触摸技术响应速度4ms两点触摸定位分辨率3276832768定位精度2mm校准符合hid设备要求无需校准多点触摸win71016点触摸触摸次数无限制触摸压力无压力要求供电方式usb直接供电书写方式手指白板笔或任意不透明物体操作软件配套的交互式教学应用软件具有教学相关工具字符图形编辑和资源库中央处理器intelj1900四核四线程180ghz芯片组intel22纳米内存内存4g硬盘128g固态或500g机械网络接口有线无线150mwifi声卡realtekalc622音频编码解码器支持6声道51音频华视伟业深fvaseealberttechnologyco
16路高清解码器_产品技术参数
解码器报警
具有保护电路,确保主设备不受损坏。
串口
普通串口
设备调试控制台。
网络键盘
键盘通过网络接口控制设备。
控制键盘
键盘通过232串口控制设备。
透明串口
透明串口功能。
解码
解码能力
(设备自动判断当前解码负荷,及时提醒用户解码异常情况)
语音对讲路数
1路
语音对讲接口
3.5mm jack口,输入接口:3.5mm接口(电平2.0V Line in/50mV Mic in,输入阻抗10K);输出接口:3.5mm接口(电平2.0V,输出阻抗16Ω)
报警输入
无
报警输出
无
工作环境及其他物理参数
电源
AC100-240V,50 Hz~60Hz
功耗
≤90W
被动接收
在转发模式下,解码器准确接收由网络服务器转发的任意数据流,实现解码输出。
输出
画面分割
NVS1604DH所有屏支持1/4画面分割。
显示轮巡
NVS1604DH设备同时具备16个VGA接口、16个HDMI接口。
报警
外部报警
具备多路继电器开关量报警输出,便捷实现报警联动外部报警设备(如:现场的灯光)控制,手动控制,联动画面输出。
产品技术参数:
系统参数
设备型号
NVS1604DH
主处理器
高性能工业级嵌入式微控制器
操作系统
嵌入式LINUX
输入设备
前面板按键,键盘控制
快捷功能
无
硬件接口参数
视频标准
MPEG4/H.264/MJPEG
音频标准
PCM/G711
欧特斯顿9E XL系列10kVA 8kW无线电源说明书
Eaton 9E10KIXLSAI Eaton 9E XL, 10 kVA, 8 kW, Entrada: cableada, Salida:cableada, torreEspecificaciones generalesNombre del producto N.º de catálogoSAI Eaton 9E9E10KIXLUPC Longitud/profundidad de producto74317206768561.29 cmAltura del producto Anchura del producto70.85 cm26.24 cmPeso del producto Conformidad(es)28.86 kg Con marca CETUVCertificación(es)IEC/EN 62040-1IEC/EN 62040-2CEEAC60 HzOnda sinusoidal48 kW0,8Torre3NoConexiones de cables/fijas110 V240 V50 HzEaton Intelligent Power Manager Eaton Intelligent Power ProtectorSin batería921EU declaration of conformity Eaton 9E UPSFrecuencia secundaria (máx.)Forma de onda de salidaNúmero máximo de bateríasPotencia en vatiosFactor de potencia de salidaDiseño externoSalida de distorsión de tensión (carga lineal) (máx.)Incluye tarjeta de redConexión de entradaTensión de entrada (mín.)Tensión de salida (máx.)Frecuencia secundaria (mín.)Compatibilidad de softwareSustitución de la bateríaRendimientoNúmero de salidas cableadasCaracterísticas especialesCompliance information Topología de dobleconversiónEl Eaton 9SX monitoriza de manera constante lascondiciones energéticas yregula la tensión y lafrecuenciaBypass interno que permitela continuidad en caso defallo del SAIPantalla LCD para estado y mediciones en tiempo real Compatible con entornosvirtuales (VMware, Hyper-V,Citrix Xen, Redhat)Tipo de construcciónModelo independienteTensión de salida (mín.)220 VColorNegroCapacidad de batería ampliadaSíRango de tensión de salida220/230/240 V +/- 2%TopologíaConversión doble/OnlineClasificación BTUOnline: 2456Eficiencia (modo Eco)96Tiempo de autonomía con carga media 0 minTensión nominal de entrada230 V predeterminado (220/230/240V)Factor de potencia de entrada Superior a 0,99Rango de frecuencia de entrada45-66HzBypass internoSíTensión de entrada (máx.)276 VTipo de tensiónCAFase (salida)1Gestión de la bateríaPrueba automática de labateríaProtección contra descarga profunda (Deep discharge protection)Función de apagado automáticoSíCapacidad nominal VA10 kVAContacto de maniobra sin potencialSíContenido del paqueteUPSCable USBCable serieManual de usuarioNivel de ruidoMenos de 55 dB a 1 metroTipo de alimentación1Gráfico de tiempo de ejecuciónVer gráfico de tiempo de autonomíaInterfaz de usuarioPantalla LCDCantidad de bateríasTensión230/400 VAlimentación intercambiable en caliente NoMargen de temperaturaDe 0 °C a 40 °C (de 32 °F a 104 °F)Interfaz EthernetNoComunicacionesPuerto USB (compatible conHID)Puerto serie RS-232Bloque de mini terminalespara el paro de emergenciaPérdida de comunicaciónHumedad relativa0-95% sin condensaciónSet de montaje en rackNoFrecuencia de salida50/60 HzTiempo de autonomía a carga completa0 minTipo de interfazOtrosFrecuencia principal - Mín.45 HzTipoUPSTensión nominal de salida230 V predeterminado (220/230/240V)Ranuras de expansiónRanura para una tarjeta de comunicación opcionalRango de tensión de entrada176-276 V (110-276 V con pérdida de potencia)Frecuencia nominal50/60 HzFrecuencia principal - Máx.66 HzAltitud3.000 mEaton Corporation plc Eaton House30 Pembroke Road Dublin 4, Ireland © 2023 Eaton. All Rights Reserved. Eaton is a registered trademark.All other trademarks areproperty of their respectiveowners./socialmedia。
EM7164SU16中文资料
Document Title1M x 16 bit Single Transistor RAMRevision HistoryRevision No. History Draft Date Remark0.0Initial Draft Jul. 11 , 2005PreliminaryNov. 24 , 2005Preliminary0.11’st Revision DNU pin location changed from E3 to H6.Added Pb-free&Green part.Feb. 15 , 2006Preliminary0.22’nd Revision Change tRC/tWC maximum from 40us to10us.Emerging Memory & Logic Solutions Inc.4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-717Tel : +82-64-740-1700 Fax : +82-64-740-1749~1750 / Homepage : The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office.1M x16 bit Single Transistor RAMGENERAL DESCRIPTIONThe EM7164SU16 is 16,777,216 bits of Single Transistor RAM which uses DRAM type memory cells, but this device has refresh-free operation and extreme low power consumption technology. Furthermore the interface is compatible to a low power Asynchronous type SRAM. The EM7164SU16 is organized as 1,048,576 Words x 16 bit.FEATURES- Organization :1M x16- Power Supply Voltage : 2.7 ~ 3.3V- Separated I/O power(VccQ) & Core power(Vcc)- Three state outputs- Byte read/write control by UB/LB- Support Direct Deep Power Down control by ZZ and Auto TCSR for power saving - Package type : 48-FPBGA 6.0x7.0PRODUCT FAMILYPart NumberOperating Temp.Power SupplySpeed(t RC )Power DissipationStandby(I SB1, Max.)Operating(I CC2, Max.)EM7164SU16-25o C to 85o C2.7V to3.3V 70ns 80uA 25mAFUNCTION BLOCK DIAGRAMCOLUMN SELECTI/O CIRCUITMemory Array 1M X 16R O W S E L E C TSelf-Refresh CONTROLCONTROL LOGICADDRESS DECODERDin/Dout BUFFERDQ0~DQ15A0~A19/ZZ /CS /UB /LB /WE /OEPIN DESCRIPTION ( 48-FBGA-6.00x7.00 )TOP VIEW (Ball Down)Name Function Name Function /CS Chip select inputs /LB Lower byte (DQ 0~7) /OE Output enable input /UB Upper byte (DQ 8~15) /WE Write enable input VCC Power supply /ZZLow Power ControlVCCQI/O Power supplyDQ 0-15 Data In-out VSS(Q) Ground A 0-19 Address inputs NCNo connectionDNUDo Not UseLBOEA0A1A2ZZDQ8UB A3A4 CS DQ0DQ9DQ10A5A6DQ1DQ2VSSQDQ11A17A7DQ3VCCVCCQDQ12NC A16DQ4VSSDQ14DQ13DQ5DQ6A15A14DQ15A19DNUA12A13DQ7WEA18A8A9A10A11123456ABC DEFGHABSOLUTE MAXIMUM RATINGS 1)1. Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functionaloperation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.2. Undershoot at power-off : -1.0V in case of pulse width < 20nsParameterSymbolRatingsUnitVoltage on Any Pin Relative to Vss V IN , V OUT -0.2 to V CCQ +0.3V V Voltage on Vcc supply relative to Vss V CC , V CCQ -0.22) to 3.6V V Power Dissipation P D 1.0 WStorage Temperature T STG -65 to 150 oCOperating TemperatureT A-25 to 85o CFUNCTIONAL DESCRIPTIONNote: X means don’t care. (Must be low or high state)CS ZZ OE WE LB UB DQ 0~7DQ 8~15Mode Power H H X X X X High-Z High-Z Deselected Stand by X L X X X X High-Z High-Z DeselectedDeep Power DownX H X X H H High-Z High-Z Deselected Stand by L H H H L X High-Z High-Z Output Disabled Active L H H H X L High-Z High-Z Output Disabled Active L H L H L H Data Out High-Z Lower Byte Read Active L H L H H L High-Z Data Out Upper Byte Read Active L H L H L L Data Out Data Out Word Read Active L H X L L H Data In High-Z Lower Byte Write Active L H X L H L High-Z Data In Upper Byte Write Active LHXLLLData InData InWord WriteActiveDC AND OPERATING CHARACTERISTICS1. Maximum Icc specifications are tested with V CC = V CCmax.ParameterSymbol Test ConditionsMin Typ Max Unit Input leakage current I LI V IN =V SS to V CCQ , V CC=V CCmax-1-1uA Output leakage currentI LO CS=V IH , /ZZ=V IH , OE=V IH or WE=V IL ,V IO =V SS to V CCQ , V CC=V CCmax-1-1uA Average operating currentI CC1Cycle time=1µs, 100% duty, I IO =0mA,CS<0.2V, ZZ=V IH , V IN <0.2V or V IN >V CCQ -0.2V--3mA I CC2Cycle time = Min, I IO =0mA, 100% duty,CS=V IL , ZZ=V IH , V IN =V IL or V IH--25mA Output low voltage V OL I OL = 0.5mA, V CC=V CCmin --0.2*V CCQV Output high voltageV OH I OH = -0.5mA, V CC=V CCmin0.8*V CCQ--VStandby Current (CMOS)I SB1CS,ZZ>V CCQ -0.2V, Other inputs = 0 ~ V CCQ (Typ. condition : V CC =3.0V @ 25o C)(Max. condition : V CC =3.3V @ 85oC)LL --80uARECOMMENDED DC OPERATING CONDITIONS 1)1. T A = -25 to 85o C, otherwise specified2. Overshoot: V CC +1.0 V in case of pulse width < 20ns3. Undershoot: -1.0 V in case of pulse width < 20ns4. Overshoot and undershoot are sampled, not 100% tested .Parameter Symbol Min Typ Max Unit Supply voltage V CC 2.7 3.0 3.3 V V CCQ 2.7 3.0 3.3 V GroundV SS , V SSQ 0 0 0VInput high voltage V IH 0.8 * V CCQ - V CCQ + 0.22) V Input low voltageV IL-0.23)-0.2 * V CCQVCAPACITANCE 1) (f =1MHz, T A =25o C)1. Capacitance is sampled, not 100% testedItemSymbol Test ConditionMin Max Unit Input capacitance C IN V IN =0V -8pF Input/Ouput capacitanceC IOV IO =0V-8pFAC OPERATING CONDITIONSTest Conditions (Test Load and Test Input/Output Reference)Input Pulse Level : 0.2V to V CCQ-0.2VInput Rise and Fall Time : 5nsInput and Output reference Voltage : V CCQ/2Output Load (See right) : CL1) = 30pF1. Including scope and Jig capacitanceCL1)AC CHARACTERISTICS (V cc = 2.7 to 3.3V, Gnd = 0V, T A = -25C to +85o C)DoutParameter List SymbolSpeedUnit Min MaxRead Read Cycle Time t RC7010k ns Address access time t AA-70ns Chip enable to data output t CO-70ns Output enable to valid output t OE-25ns UB, LB enable to data output t BA-70ns Chip enable to low-Z output t LZ10-ns UB, LB enable to low-Z output t BLZ10-ns Output enable to low-Z output t OLZ5-ns Chip disable to high-Z output t HZ015ns UB, LB disable to high-Z output t BHZ015ns Output disable to high-Z output t OHZ015ns Output hold from Address change t OH5-nsWrite Write Cycle Time t WC7010k ns Chip enable to end of write t CW60-ns Address setup time t AS0-ns Address valid to end of write t AW60-ns UB, LB valid to end of write t BW60-ns Write pulse width t WP50-ns Write recovery time t WR0-ns Write to output high-Z t WHZ015ns Data to write time overlap t DW20-ns Data hold from write time t DH0-ns End write to output low-Z t OW5-nsTIMING DIAGRAMSAddressCS LB, UB OE Data Outt CO t OHt BA t OEt BHZ t OHZData Vaildt OLZ t BLZt LZ t AAt HZREAD CYCLE (2) (ZZ=WE=VIH)NOTES (READ CYCLE)1. t HZ , t BHZ and t OHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels.2. Do not Access device with cycle timing shorter than t RC for continuous periods > 40us.READ CYCLE (1) (Address controlled, CS=OE=VIL, ZZ=WE=VIH, UB or/and LB=VIL)t RCAddresst AAData OutData Validt OHPrevious Data ValidHigh-Zt RCt WR t WCAddressCS LB, UB WEData Int CWt AW t BWt WPt ASt DW t DHWRITE CYCLE (1) (WE controlled, ZZ=OE=VIH)Data ValidHigh-ZData UndefinedData Outt OWt WHZt WRt WCAddressCS LB, UB WEData In t CWt AWt BW t WPt ASt DWt DHWRITE CYCLE (2) (CS controlled, ZZ=OE=VIH)Data ValidHigh-ZData OutNOTES (WRITE CYCLE)1. A write occurs during the overlap(t WP ) of low CS, low WE and low UB or LB. A write begins at the last transition among low CS and low WE with asserting UB or LB low for single byte operation or simultaneously asserting UB and LB low for word operation. A write ends at the earliest transition among high CS and high WE. The t WP is measured from the beginning of write to the end of write.2. t CW is measured from CS going low to end od write.3. t AS is measured from the address valid to the beginning of write.4. t WR is measured from the end of write to the address change. t WR applied in case a write ends as CS or WE going high.5. Do not Access device with cycle timing shorter than t WC for continuous periods > 40us.t WRt WCAddressCSLB, UB WEData In t CWt AWt BW t WPt ASt DWt DHWRITE CYCLE (3) (UB, LB controlled, ZZ=OE=VIH)Data ValidHigh-ZData OutLOW POWER MODESDeep Power Down Mode Entry/Exitt CSZZCSZZt ZZCSDeep Power Down Entry t RDeep Power Down ExitNormaloperation~~~~t ZZPLow Power Mode CharacteristicsParameter Description Min.Max.Units t ZZCS ZZ low to CS low 0-ns t CSZZ CS high to ZZ high 0-ns t R Operation Recovery Time200-us t ZZPZZ pulse width20-nsParameter Symbol Test ConditionsMin Typ Max Unit Deep Power DownCurrentI ZZZZ < 0.2V, Other inputs = 0 ~ V CCQ(Max. condition : V CC =3.3V @ 85o C)--10uA~~NOTES ( DEEP POWER DOWN )During Deep Power Down mode, all referesh related activity are disabled.TIMING WAVEFORM OF POWER UPV CCCSNOTE . ( POWER UP )1. After Vcc reaches Vcc(Min.) , wait 200us with CS high. Then you get into the normal operation.0.5#A1A0.79 T y p .0.25 T y p .E 20.26E 1E AB CDEF G H654321B B10.5CC 1B/2C 1/2BCPACKAGE DIMENSION48 Ball Fine Pitch BGA (0.75mm ball pitch)Bottom ViewTop ViewCDYMinTyp Max A -0.75-B 5.93 6.00 6.03B1- 3.75-C 6.937.007.03C1- 5.25-D 0.300.350.40E 1.00 1.04 1.10E1-0.79-E2-0.25-Y--0.08NOTES.1. Bump counts : 48(8row x 6column)2. Bump pitch : (x,y)=(0.75x0.75) (typ.)3. All tolerence are +/-0.050 unless otherwise specified.4. Typ : Typical5. Y is coplanarity : 0.08(Max)Side ViewDetail AA1 index MarkUnit: millimetersMEMORY FUNCTION GUIDEEM X XX X X X XX X X - XX XX1. EMLSI Memory2. Device Type3. Density5. Technology6. Operating Voltage8. Version9. Packages10. Speed 7. Organization1. Memory Component2. Device Type6 ---------------------- Low Power SRAM7 ---------------------- STRAM3. Density1 ----------------------- 1M2 ----------------------- 2M4 ----------------------- 4M8 ----------------------- 8M16 --------------------- 16M32 --------------------- 32M64 --------------------- 64M4. Function0 ---------------------- Dual CS1 ---------------------- Single CS2 ---------------------- Multiplexed3----------------------- Single CS with /ZZ4----------------------- Single CS with /ZZ & Direct DPD 5 ---------------------- Multiplexed with Sync. mode 5. TechnologyBlank ---------------- CMOSF ----------------------- Full CMOSS ----------------------- Single Transistor6. Operating VoltageBlank ---------------- 5VV ----------------------- 3.3VU ----------------------- 3.0VS ----------------------- 2.5VR ----------------------- 2.0VP ----------------------- 1.8VO ----------------------- 1.5V 7. Organization8 ---------------------- x8 bit16 ---------------------- x16 bit32 ---------------------- x32 bit8. VersionBlank ----------------- Mother dieA ----------------------- First versionB ----------------------- Second versionC ----------------------- Third versionD ----------------------- Fourth versionE ----------------------- Fifth version9. PackageBlank ---------------------- PackageW --------------------- Wafer10. Speed45 ---------------------- 45ns55 ---------------------- 55ns70 ---------------------- 70ns85 ---------------------- 85ns90 ---------------------- 90ns10 --------------------- 100ns12 --------------------- 120ns11. PowerLL ---------------------- Low Low PowerLF ---------------------- Low Low Power(Pb-Free&Green) L ---------------------- Low PowerS ---------------------- Standard Power4. Option11. Power。
Wells Ventless Universal Hood System电子烹饪器型号WVU48 W
p/n 2M-Z16247Rev. D M522 150804Unless otherwise specified, all commercial cooking equipment manufactured by Wells Manufacturing isperformed by unauthorized personnel. The prices chargedby Wells Manufacturing for its products are based upon the limitations in this warranty. Seller’s obligation under this for information and other details concerning warranty.LIMITED WARRANTY STATEMENTSERVICE POLICY AND PROCEDURE GUIDE and ADDITIONAL WARRANTY EXCLUSIONSNOTE: For your protection, please note that equipment 3.CONCEALED LOSS OR DAMAGE: if damage isSHIPPING DAMAGE CLAIM PROCEDURE1. Resetting of safety thermostats, circuit breakers, overpreventative maintenance items, such as servicing andcleaning schedules, are customer responsibility. Those M 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dM 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dThank You for purchasing this Wells Manufacturing appliance.TABLE OF CONTENTSELECTRICAL SPECIFICATIONSINTRODUCTIONModelVoltsAmpsPower SupplyM 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dFEATURES & OPERATING CONTROLSM 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dFEATURES & OPERATING CONTROLS continuedM 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dPRECAUTIONS AND GENERAL INFORMATIONThis ventilator hood is part of an engineered system and is intended for use in commercial establishments only.DANGER:SUFFOCATION HAZARD Do not attempt to use this ventilator with gas-fired units.This ventilator will not remove WARNING:SHOCK HAZARDAll servicing requiring access to non-insulatedM 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dAGENCY LISTING INFORMATIONINSTALLATIONNOTE: DO NOT discard WARNING:RISK OF INJURYInstallation procedures must be performed by a qualified technician with full knowledge of all applicable electrical codes. Failure can result in UNPACKING & INSPECTIONCarefully remove the appliance from the carton. Remove allprotective plastic film, packing materials and accessories from the This appliance conforms to NSF Standard 2 for sanitation only if UL710BRecurculating SystemSANITATIONNSF/ANSI 2M 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dINSTALLATION (continued)UNDER-HOOD APPLIANCE LIMITATIONS:1. Appliance must be installed per manufactures instructions.M 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dINSTALLATION (continued)SERVICE TECHNICIAN INSTALLATION NOTESDANGER:SUFFOCATION HAZARD Do not attempt to use this ventilator with gas-fired units.This ventilator will not remove WARNING:SHOCK HAZARDAll servicing requiring access to non-insulated electrical components must be performed by a factory authorized technician.CAUTION:RISK OF DAMAGEDO NOT connect or energize this appliance until allinstallation instructions are read and followed. Property damage or bodily injury couldM 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dINSTALLATION (continued)Hardware ProvidedINSTALLATION (continued)Base DeflectorsRTV SealantM 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dELECTRICAL INSTALLATIONINSTALLATIONDANGER:SUFFOCATION HAZARD Do not attempt to use this ventilator with gas-fired units.can be deadly.WARNINGSHOCK HAZARDElectrical connections must be made by a licensed electrician.CAUTION:FIRE HAZARD HEALTH HAZARDAll cooking appliance must be connected to the cooking appliance contactor, the control circuit of which is controlled by the ventilator.M 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dDANGER:SHOCK HAZARD Turn power off to the unit before removing the side electrical box cover.CAUTION:SHOCK HAZARDThe ground lug of this appliance must be connected to a suitable building ground.IMPORTANT:Contact a licensed electrician INSTALLATION continuedM 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dINSTALLATION continuedDANGERFIRE HAZARDFire suppression systemmust be charged and certified by an authorized Ansul® distributor.DO NOT attempt to modify or The alarm relay is activated by the Ansul® fire detection system. If theM 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dINSTALLATIONDANGERBURN HAZARDAny additional remote pull station must NOT be installed on the front of the cooking appliances,FIRE SUPPRESSION SYSTEM INSTALLATION (continued)M 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dINSTALLATIONNOTE:WARNINGSLIP AND FALL HAZARDDO NOT operate any grease-producing cooking appliance(e.g. fryer or griddle) unless the grease cup is properly CAUTIONBURN HAZARDDO NOT operate any cooking appliance unless the grease cup is installed.Moisture dripping onto hot surfaces, oil or grease can FILTER INSTALLATIONM 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dCAUTION:HOT SURFACEExposed surfaces can be hot to the touch and may cause burns.CAUTION:SHOCK HAZARDDO NOT splash or pour water or grease onto control panel or wiring.OPERATIONM 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dCLEANING INSTRUCTIONSPRECAUTIONS: Disconnect unit from electric power and allow to cool CAUTION:HOT SURFACEExposed surfaces can be hotto the touch and may cause burns. Allow unit to cool before cleaning.CAUTION:SHOCK HAZARDDO NOT splash or pour water or grease onto control panel or wiring.M 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dCLEANING INSTRUCTIONSPRECAUTIONS: Disconnect unit from electric power and allow to coolRemove BAFFLE FILTERS, GREASE CUP(s), and all FILTER PACK(s).CAUTION:HOT SURFACEExposed surfaces can be hot to the touch and may cause burns. Allow unit to cool before cleaning.CAUTION:SHOCK HAZARDDO NOT splash or pour water or grease onto control panel or wiring.IMPORTANT:MAINTENANCE: DISCHARGE DIRECTION CHANGEProcedure for changing the discharge on a WVU-48 / 96M 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dREQUIRED MAINTENANCEUSE AND MAINTENANCE SHALL BE IN ACCORDANCE WITH THE STANDARD FOR VENTILATION CONTROL AND FIRE PROTECTION OF COMMERIAL COOKING OPERATIONS, N.F.P .A. 96 (current edition).IMPORTANT:Per NFPS 96, a signed and dated VENTILATOR HOOD MAINTENANCE LOG20M 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dM 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o d22M 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o dANSUL ®A N S U L IN C O R P O R ATE D M A R IN E TTE , W I 54143-2542MATERIAL SAFETY DATA SHEETANSULEX Low pHQ U IC K ID E N TIFIE R (In P lant C om m on N ame)M anufacturer’s N am e:E m ergency Telephone N o.:ANSUL INCORPORATEDCHEMTREC(800) 424-9300 or (703) 527-3887P repared B y:A ddress:O ne Stan to n Stre et, M a rin ette, W I 54143-2542S a fe ty an d H ea lth D e pa rtm en tO ther Information C alls:(715) 735-7411D ate Prepared:Fe brua ry 1, 1999SECTION 1 - IDENTITYSECTION 2 - INGREDIENTSSECTION 3 - PHYSICAL AND CHEMICAL CHARACTERISTICS (Fire and Explosion Data)C om m on N am e (U sed on Label):(Trade N ame and S ynonym s)A N S U LE X L ow p H L iq uid Fire S up pre ssa ntC A S N o.:N /A N /A N /A N /A N /AN /A N /AN /AN /AN /E N /E N /EN /E N /E N D A N D A N D AN D A N /AC hem ical N am e:N /A T his is a M ixtu re C hem ical Fam ily:M ixtu reFormula:PART A - HAZARDOUS INGREDIENTSPART B - OTHER INGREDIENTSP rincipal H azardous C om ponent(s) (chem ical and com m on nam e(s)):O ther C om ponent(s) (chemical and com m on nam e(s)):W t.%W t.%C A S N o.C A S N o.A C G IH TLVA C G IH TLVA cute Toxicity D ataA cute Toxicity D ataN o ne P ro prie ta ry M ixtu re o f O rga nic an d Ino rg an ic S a lts 48.0 - 50.0P h osp ho ric A cid 0.27664-38-2Ye llow -G re en F lu ore sce nt D ye 0.011518-47-8O ra l L D (rat)506800 m g /kg E D TA0.6564--02-8W a te rA p pro x. 50.07732-18-5B oiling P oint:P ercent Volatile by Volum e (%):S olubility in W ater:A ppearance and O dor:Flash P oint:Special FireFighting P rocedures:U nusual Fire and E xplosion H azards:113ºC A p pro x. 50.0100%Fluo re scen t Ye llo w C o lo re d L iq uid, M ild O d or N o ne to b oilin gN O N E - T H IS IS A N E X TIN G U IS H IN G A G E N T N o neVapor D ensity:(A ir = 1):Flam mable Lim its in A ir % by Volum e:1.03SpecificG ravity (H O =1):Vapor P ressure (m m H g):1.33N o t D e te rm ine dE vaporation R ate:(B utyl Acetate=1):A p pro x. 0.005R eactivity in W ater:M ild e xoth e rm ic rea ctio nE xtinguisher M edia:A uto-Ignition Tem perature:M 522 p /n 2M -Z 16247 O p M W V U - U n i v e r s a l H o o d23SECTION 6 - EMERGENCY AND FIRST AID PROCEDURESSECTION 7 - SPECIAL PROTECTION INFORMATIONSECTION 8 - SPECIAL PRECAUTIONS AND SPILL/LEAK PROCEDURESHAZARDOUS MATERIAL IDENTIFICATION SYSTEMANSULEX Low pH (continued)S kin C ontact:Inhalation:Ingestion:E ye C ontact:Flush an d irriga te w ith w ate r for 15 m in ute s w h ile h olding e ye lids o pe n.If irritation p ersists, see k m ed ical a tte ntio n.W a sh tho ro ug hly w ith soa p an d w ater. If irritatio n p e rsists, se ek m ed ica l a tte ntio n.Fre sh air if sym ptom s o ccur. If irrita tio n pe rsists, se e k m e dica l atten tion.D ilute by d rin king large qu an titie s of w ater.R espiratory P rotection(Specify Type):N /AN /AN /AVentilation:Local E xhaust:M echanical (G eneral):P rotective G loves:R u bb er gloves for spill/lea kE yeP rotection:C h em ica l g og gles re com m en de d du rin g spill/le ak p roce du res.O ther Protective C lothing or E quipm ent:E ye w ash an d sa fe ty sho w ers are g oo d sa fety pra ctice.P recautions to be taken in H andling and Storage:O therP recautions:Steps to be taken in C ase M aterial is R eleased or Spilled:W aste D isposalM ethods:Store in origina l co nta in er. K e ep tig htly close d. K e ep sepa ra te fro m acid.S e e incom patibility in fo rm ation in S ection 4.Stop lea ks. C o ntain sp ills. R em o ve a s m u ch a s po ssible. P lace in clo se d co nta in er fo r prop er disp osa l W a sh sp ill a rea w ith la rge a m o un ts of w ater to rem o ve traces a nd n eu tra lize.D isp ose of in com p lia n ce w ith lo ca l, sta te an d fe de ral re gu la tio n s.HAZARD INDEX4 SE V E R E H A ZA R D 0 H E A LTH 3 SE R IO U S H A ZA R D2 M O D E R ATE H AZ AR D 0 FLA M M AB ILITY 1 SLIG H T H AZ AR D0 M IN IMA L H A ZA R D 0 R E A C TIV ITYN /A = N o t A pp lica b le N D A = N o D a ta Ava ila b le N /E = N o t E sta blishe dA N SU L and AN S U LE X are registered tradem arks.Internet A ddress: http://w w A N SU L IN C O R P O R ATE D , O N E S TA N TO N S TR E E T, M A R IN ET TE , W I 54143-2542 Form N o. 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SM39R16A3内嵌16KB具...
产品目录 (3)描述 (3)订货信息 (3)特征 (3)各封装引脚配置 (4)系统方框图 (6)管脚描述 (7)特殊功能寄存器(SFR) (8)功能描述 (12)1.总特征 (12)1.1嵌入式程序存储器 (12)1.2IO口 (12)1.3指令时钟周期选择 (12)1.4时钟输出选择 (13)1.5复位 (13)1.6时钟源 (15)2.指令设置 (16)3.存储器结构 (20)3.1程序存储器 (20)3.2数据存储器 (21)3.3数据内存-低128字节(00H TO 7F H) (21)3.4数据存储器-高128字节(80H TO FF H) (21)3.5存储器-扩展的256字节($00到$FF) (21)4.CPU结构 (22)4.1累加器 (22)4.2B寄存器 (22)4.3程序状态字 (23)4.4堆栈指针 (23)4.5数据指针 (23)4.6数据指针1 (24)4.7时钟控制寄存器 (24)4.8接口控制寄存器 (25)5.GPIO管脚型态 (26)6.定时器0 和定时器1 (28)6.1定时器/计数器模式控制寄存器(TMOD) (28)6.2定时/计数控制寄存器(TCON) (29)6.3定时器输入频率控制寄存器 (29)6.4模式0(13位定时/计数) (30)6.5模式1(16位定时/计数) (31)6.6模式2(8位自动重载定时/计数) (31)6.7模式3(两个独立8位定时/计数(仅定时器0)) (32)7.定时器2 以及捕捉/比较单元 (32)7.1定时器2功能 (35)7.2比较功能 (36)7.3捕获功能 (38)8.串行接口0 (39)8.1串行接口由以下4种模式可以设置 (40)8.2串行接口的多重机通讯 (42)8.3输入频率控制寄存器 (42)8.4波特率发生器 (42)9.看门狗定时器 (44)10.中断 (48)10.1优先权配置 (51)11.电源管理单元 (53)11.1待机模式(空闲模式) (53)11.2停止模式 (53)12.脉宽调制器(PWM) (54)13.IIC 功能 (57)14.SPI功能 (62)15.KBI –键盘接口 (67)16.LVI –低压侦测中断 (70)17.10位模拟数字转换器(ADC) (71)18.在系统编程(INTERNAL ISP) (75)18.1ISP服务程序 (75)18.2锁定位(N) (75)18.3对ISP服务程序编程 (76)18.4启动ISP服务程序 (76)18.5ISP寄存器–TAKEY,IFCON,ISPFAH,ISPFAL,ISPFD AND ISPFC (76)19.比较器(COMPARATOR) (80)工作环境 (83)DC电气特性 (83)ADC电气特性 (85)COMPARATOR 电气特性 (85)LVI& LVR电气特性 (86)产品目录SM39R16A3U20,SM39R16A3U16,SM39R16A3U14,描述原来的8052有12时钟结构,一个机器周期需要12个时钟,大多数指令是一个或两个机器周期.因此,除了乘和除指令, 8052的每个指令使用12或24个时钟,此外,8052中的每个周期用了两个记忆提取.在许多情况下,第二个是假的提取,和额外的时钟被浪费了该SM39R16A3是一个快速的单芯片8位微控制器内核.这是一个全功能的8位嵌入式控制器,执行所有ASM51指令,具有与MCS - 51相同的指令设置订货信息SM39R16A3ihhkL yymmvi: 工艺标志{ U = 1.8V ~ 5.5V}hh: 封装脚位k: 封装形式后缀{as table below }L: 无铅标志{无文字即含铅,”P” 即无铅}yy: 年mm: 月v: 版本标志{ A, B,…}Postfix PackageN PDIP (300 mil)S SOP (300 mil)O SOP (150 mil)G SSOP (150 mil) 特征●工作电压: 1.8V ~ 5.5V●高速1T 架构,最高可达25MHz●1~8T 模式可使用软件编程●指令设置兼容 MCS-51●内置22.1184MHz RC振荡器,及可程序化的分频器●16KB字节的片上闪存程序存储器●512B 字节的标准的8052 RAM●双16-bit 数据指针 (DPTR0&DPTR1)●一个全双工通信的串行接口.附加波特率产生器●三个16-bit 的定时器/计数器(计时器0,1,2)●12 ~18 GPIOs(14L~ 20L封装脚位),GPIOs 可选择四种型态(准双向口、推挽、开漏、只输入),默认准双向口(上拉)●具有四级优先权的外部中断0&外部中断1●可编程的看门狗定时器(WDT)●一个IIC 接口(主/从机模式)●一个SPI 接口(主/从机模式)●4路 10bit 脉宽调制(PWM)●4路16bit 比较(PWM)/捕获/重载功能●7路10bit 模拟数字转换(ADC)加上1路通道0链接内部Vref●片上内建比较器●片上闪存存储器支持ISP/IAP/ICP及EEPROM 功能●ISP服务程序存储空间设置为N*128 byte (N=0 to 8) ●片上在线仿真功能(ICE)及片上在线调试功能(OCD) ●键盘接口(KBI) 共4个的中断源●ALE 输出选择●低电压中断/低电压复位(LVI/LVR )●管脚ESD性能超过4KV●增强用户代码保护●电源管理单元空闲及掉电模式各封装引脚配置20 Pin PDIP/SOP/SSOPCmp1Out/SPICLK/KBI0/P0.0 PWM1/MOSI/CC2/P1.7PWM0/MISO/CC1/P1.6RST/P1.5VSSOSC_IN/XTAL1/P3.1CLKOUT/XTAL2/P3.0SS/INT1/P1.4 OCISDA/IICSDA/INT0/P1.3 OCISCL/IICSCL/T0/P1.2P0.1/KBI1/ADC1/Cmp1NInP0.2/KBI2/ADC2/Cmp1PInP0.3/KBI3/T2/ADC3/Cmp0NIn P0.4/ADC4/Cmp0PInP0.5/ADC5/CC0/PWM2 VDDP0.6/ADC6/Cmp0OutP0.7/T1/ADC7/CC3/PWM3P1.0/TXDP1.1/RXD/T2EX16 Pin SOPPWM0/MISO/CC1/P1.6RST/P1.5VSS OSC_IN/XTAL1/P3.1CLKOUT/XTAL2/P3.0SS/INT1/P1.4 OCISDA/IICSDA/INT0/P1.3 OCISCL/IICSCL/T0/P1.2P0.3/KBI3/T2/ADC3/Cmp0NIn P0.4/ADC4/Cmp0PInP0.5/ADC5/CC0/PWM2 VDDP0.6/ADC6/Cmp0OutP0.7/T1/ADC7/CC3/PWM3P1.0/TXDP1.1/RXD/T2EX14 Pin SOPSM39R16A3PWM0/MISO/CC1/P1.6RST/P1.5VSSOSC_IN/XTAL1/P3.1CLKOUT/XTAL2/P3.0OCISDA/IICSDA/INT0/P1.3P1.2/IICSCL/T0/OCISCLVDD P1.0/TXD P1.1/RXD/T2EX PWM1/MOSI/CC2/P1.7P0.0/KBI0/SPICLK/Cmp1Out P0.1/KBI1/ADC1/Cmp1NIn P0.2/KBI2/ADC2/Cmp1PIn附注:出厂默认值注意事项(1) 管脚RST/P1.5于出厂时设置为一般双向I/O(P1.5)脚,若使用者需切换为复位脚可于刻录时将此管脚定义为RESET 脚(2) 2. 为避免偶然的情况下误入ISP 刻录状态(参考第18.4单元),在上电时请确保没有连续的脉冲信号在管脚RXD P1.1及管脚P1.6必须置高,可于刻录时(3) 3. OSI_SDA/P1.3及OCI_SCL/P1.2于复位期间为ICP 刻录功能管脚,复位完成后切换成双向I/O.系统方框图Port 0Port 1Port 3T0T1CC0~CC3T2T2EXI C _S C L P W M 0P W M 1R X DX Dm p 0N I n /C m 1N I n m p 0O u t /C m p 1O u tXTAL1XTAL2D C 1 D C 2 D C 3 I C _S D AP I _M I S O P I _M O S I P I _C L K P I _S SD C 4D C 5 D C 6 D C 7O C I _S C (s h a r e w i t h I I C O C I _S D (s h a r e w i t h I I C RESET m p 0P I n /C m p 1P I n P W M 2P W M 3管脚描述20L 16L 14L 代号I/O 描述1 - 14 P0.0/KBI0/SPICLK/ADC0/ CMP1OutI/O P0口的位0 & 键盘接口中断0 & SPI 接口时钟&模数转换通道0 &比较器1输出2 - 1 P1.7/CC2/MOSI/PWM1 I/O P1口的位7 &计时器2及捕获/比较单元通道2& SPI 接口串行数据线主输出或从输入口&宽脉调制通道13 1 2 P1.6/CC1/MISO/PWM0 I/O P1口的位6 &计时器2及捕获/比较单元通道1& SPI 接口串行数据线主输入或从输出口&宽脉调制通道04 2 3 P1.5/RST I/O P1口的位5 &复位 5 3 4 VSSI 供电电源地6 4 5 P3.1/XTAL1/OSC_IN I/O P3口的位1 &晶振输入&外部振荡器输入7 5 6 P3.0/XTAL2/CLKOUT I/O P3口的位0 &晶振输出&时钟输出8 6 - P1.4/INT1/SS I/O P1口的位4 &外部中断1& SPI 接口从机跳线9 7 7 P1.3/INT0/IICSDA/OCISDA I/O P1口的位3 &外部中断0 & IIC 串行数据线 & ICE 和 ICP 功能的指令及数据输入10 8 8 P1.2/T0/IICSCL/ OCISCL I/O P1口的位2 &计时器0外部输入& IIC 串行时钟线 & ICE 和 ICP 功能的时钟输入11 9 9 P1.1/RXD/T2EX I/O P1口的位1 & 串行接口通道接收/发送数据 & 计时器2捕捉触发及捕获触发器12 10 10 P1.0/TXDI/O P1口的位0 &串行接口通道数据传输或接收模式0时钟13 11 - P0.7/T1/ADC7/ CC3/PWM3I/O P0口的位7 &计时器1外部输入&模数转换通道7 &计时器2及捕获/比较单元通道3 &宽脉调制通314 12 - P0.6/ADC6/CMP0Out I/O P0口的位6 & 模数转换通道6 &比较器0输出 15 13 11 VDDI 数位电源电压16 14 - P0.5/ADC5/CC0/PWM2 I/O P0口的位5 & 模数转换通道5 &计时器2及捕获/比较单元通道0 &宽脉调制通道217 15 - P0.4/ADC4/ CMP0PIn I/O P0口的位4 & 模数转换通道4 & 比较器0非反向输入18 16 - P0.3/KBI3/T2/ ADC3/CMP0NIn I/O P0口的位3 & 键盘接口中断3 & 计时器2外部输入时钟 &模数转换通道3 & 比较器0反向输入19 - 12 P0.2/KBI2/ADC2/ CMP1PIn I/O P0口的位2 & 键盘接口中断2 & 模数转换通道2 & 比较器1非反向输入20-13P0.1/KBI1/ADC1/ CMP1NInI/OP0口的位0 & 键盘接口中断1 & 模数转换通道1 & 比较器1反向输入特殊功能寄存器(SFR)特殊功能寄存器分布图如下所示:注:SM39R16A3特殊功能寄存器的重置值在下表描述寄存器地址重置值描述SYSTEMSP 81h 07h Stack PointerACC E0h 00h AccumulatorPSW D0h 00h Program Status WordB F0h 00h B RegisterDPL 82h 00h Data Pointer 0 low byteDPH 83h 00h Data Pointer 0 high byteDPL1 84h 00h Data Pointer 1 low byteDPH1 85h 00h Data Pointer 1 high byteAUX 91h 00h Auxiliary registerPCON 87h 00h Power ControlCKCON 8Eh 10h Clock control registerINTERRUPT & PRIORITYIRCON C0h 00h Interrupt Request Control RegisterIRCON2 97h 00h Interrupt Request Control Register 2寄存器地址重置值描述IEN0 A8h 00h Interrupt Enable Register 0IEN1 B8h 00h Interrupt Enable Register 1IEN2 9Ah 00h Interrupt Enable Register 2IP0 A9h 00h Interrupt Priority Register 0IP1 B9h 00h Interrupt Priority Register 1KBIKBLS 93h 00h Keyboard level selector RegisterKBE 94h 00h Keyboard input enable RegisterKBF 95h 00h Keyboard interrupt flag RegisterKBD 96h 00h Keyboard interface De-bounce control register UARTPCON 87h 00h Power ControlAUX 91h 00h Auxiliary registerSCON 98h 00h Serial Port, Control RegisterSBUF 99h 00h Serial Port, Data BufferSRELL AAh 00h Serial Port, Reload Register, low byteSRELH BAh 00h Serial Port, Reload Register, high bytePFCON D9h 00h Peripheral Frequency control registerADCADCC1 ABh 00h ADC Control 1 RegisterADCC2 ACh 00h ADC Control 2 RegisterADCDH ADh 00h ADC data high byteADCDL AEh 00h ADC data low byteADCCS AFh 00h ADC clock selectWDTRSTS A1h 00h Reset status registerWDTC B6h 04h Watchdog timer control registerWDTK B7h 00h Watchdog timer refresh key.TAKEY F7h 00h Time Access Key registerPWMPWMC B5h 00h PWM control registerPWMD0H BCh 00h PWM channel 0 data high bytePWMD0L BDh 00h PWM channel 0 data low bytePWMD1H BEh 00h PWM channel 1 data high bytePWMD1L BFh 00h PWM channel 1 data low bytePWMD2H B1h 00h PWM channel 2 data high bytePWMD2L B2h 00h PWM channel 2 data low bytePWMD3H B3h 00h PWM channel 3 data high bytePWMD3L B4h 00h PWM channel 3 data low bytePWMMDH CEh 00h PWM Max Data Register, high byte. PWMMDL CFh FFh PWM Max Data Register, low byte.寄存器地址重置值描述TIMER0/TIMER1TCON 88h 00h Timer/Counter ControlTMOD 89h 00h Timer Mode ControlTL0 8Ah 00h Timer 0, low byteTL1 8Bh 00h Timer 1, low byteTH0 8Ch 00h Timer 0, high byteTH1 8Dh 00h Timer 1, high bytePFCON D9h 00h Peripheral Frequency control registerPCA(TIMER2)CCEN C1h 00h Compare/Capture Enable RegisterCCL1 C2h 00h Compare/Capture Register 1, low byteCCH1 C3h 00h Compare/Capture Register 1, high byteCCL2 C4h 00h Compare/Capture Register 2, low byteCCH2 C5h 00h Compare/Capture Register 2, high byteCCL3 C6h 00h Compare/Capture Register 3, low byteCCH3 C7h 00h Compare/Capture Register 3, high byteT2CON C8h 00h Timer 2 ControlCCCON C9h 00h Compare/Capture ControlCRCL CAh 00h Compare/Reload/Capture Register, low byte CRCH CBh 00h Compare/Reload/Capture Register, high byte TL2 CCh 00h Timer 2, low byteTH2 CDh 00h Timer 2, high byteCCEN2 D1h 00h Compare/Capture Enable 2 registerGPIOP0 80h FFh Port 0P1 90h FFh Port 1P3 B0h FFh Port 3P0M0 D2h 00h Port 0 output mode 0P0M1 D3h 00h Port 0 output mode 1P1M0 D4h 00h Port 1 output mode 0P1M1 D5h 00h Port 1 output mode 1P3M0 DAh 00h Port 3 output mode 0P3M1 DBh 00h Port 3 output mode 1ISP/IAP/EEPROMIFCON 8Fh 00h Interface control registerISPFAH E1h FFh ISP Flash Address-High registerISPFAL E2h FFh ISP Flash Address-Low registerISPFD E3h FFh ISP Flash Data registerISPFC E4h 00h ISP Flash control registerTAKEY F7h 00h Time Access Key registerLVI/LVR/SOFTRESET寄存器地址重置值描述RSTS A1h 00h Reset status registerLVC E6h 20h Low voltage control registerSWRES E7h 00h Software Reset registerTAKEY F7h 00h Time Access Key registerSPIAUX 91h 00h Auxiliary registerSPIC1 F1h 08h SPI control register 1SPIC2 F2h 00h SPI control register 2SPITXD F3h 00h SPI transmit data bufferSPIRXD F4h 00h SPI receive data bufferSPIS F5h 40h SPI status registerIICAUX 91h 00h Auxiliary registerIICS F8h 00h IIC status registerIICCTL F9h 04h IIC control registerIICA1 FAh A0h IIC channel 1 Address 1 registerIICA2 FBh 60h IIC channel 1 Address 2 registerIICRWD FCh 00h IIC channel 1 Read / Write Data buffer IICEBT FDh 00h IIC Enable Bus Transaction register OPAOPPIN F6h 00H Comparator Pin Select registerCMP0CON FEh 00h Comparator 0 Control registerCMP1CON FFh 00h Comparator 1 Control register功能描述1. 总特征SM39R16A3是一个8位的微处理器,它的所有功能以及特殊功能寄存器(SFR)的详细定义将在以下章节给出.1.1 嵌入式程序存储器可通过编程器或在线编程(ISP)将程序加载到16KB的嵌入式闪存体中,其高品质的闪存体具有100K次的重复可擦写编程并记忆数据,如EEPROM。
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Document Title1M x 16 bit Single Transistor RAMRevision HistoryRevision No. History Draft Date Remark0.0Initial Draft Jun. 07 , 2005Preliminary0.12’nd Draft Add net die and pad coordinates Aug. 22 , 2005Emerging Memory & Logic Solutions Inc.4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-717Tel : +82-64-740-1700 Fax : +82-64-740-1749~1750 / Homepage : The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office.1M x16 bit Single Transistor RAMGENERAL DESCRIPTIONThe EM7164SU16 is 16,777,216 bits of Single Transistor RAM which uses DRAM type memory cells, but this device has refresh-free operation and extreme low power consumption technology. Furthermore the interface is compatible to a low power Asynchronous type SRAM. The EM7164SU16 is organized as 1,048,576 Words x 16 bit.FEATURES- Organization :1M x16- Power Supply Voltage : 2.7 ~ 3.3V- Separated I/O power(VccQ) & Core power(Vcc)- Three state outputs- Support Direct Deep Power Down control by ZZ and Auto TCSR for power savingPRODUCT FAMILYPart NumberOperating Temp.Power SupplySpeed(t RC )Power DissipationStandby(I SB1, Max.)Operating(I CC2, Max.)EM7164SU16W-25o C to 85o C2.7V to3.3V 70ns 80uA 25mAFUNCTION BLOCK DIAGRAMCOLUMN SELECTI/O CIRCUITMemory Array 1M X 16R O W S E L E C TSelf-Refresh CONTROLCONTROL LOGICADDRESS DECODERDin/Dout BUFFERDQ0~DQ15A0~A19/ZZ /CS /UB /LB /WE /OEGENERAL WAFER SPECIFICATIONS- Process Technology : 0.13um CMOS Deep trench process - 3 Metal layers including local inter-connection - Wafer thickness : 725 +/- 25um - Minimum Pad Pitch : 100um - Wafer diameter : 8-inch131 +(0.0)1M x16 bit Single Transistor RAM60xyDEVICE CODE 3230(EM716XSU16)PAD DESCRIPTIONName Function Name Function /CS Chip select inputs /LB Lower byte (DQ 0~7) /OE Output enable input /UB Upper byte (DQ 8~15) /WE Write enable input VCC Power supply /ZZLow Power ControlVCCQI/O Power supplyDQ 0-15 Data In-out VSS(Q) Ground A 0-19Address inputsNCNo connectionABSOLUTE MAXIMUM RATINGS 1)Parameter Symbol Ratings Unit Voltage on Any Pin Relative to Vss V IN, V OUT -0.2 to V CCQ+0.3V V Voltage on Vcc supply relative to Vss V CC, V CCQ -0.22) to 3.6V V Power Dissipation P D 1.0 W Storage Temperature T STG -65 to 150 o C Operating Temperature T A -25 to 85 o C1.Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.2. Undershoot at power-off : -1.0V in case of pulse width < 20nsFUNCTIONAL DESCRIPTIONCS ZZ OE WE LB UB DQ0~7DQ8~15Mode PowerH H X X X X High-Z High-Z Deselected Stand byX L X X X X High-Z High-Z Deselected Deep Power Down X H X X H H High-Z High-Z Deselected Stand by L H H H L X High-Z High-Z Output Disabled Active L H H H X L High-Z High-Z Output Disabled Active L H L H L H Data Out High-Z Lower Byte Read Active L H L H H L High-Z Data Out Upper Byte Read Active L H L H L L Data Out Data Out Word Read Active L H X L L H Data In High-Z Lower Byte Write Active L H X L H L High-Z Data In Upper Byte Write Active L H X L L L Data In Data In Word Write ActiveNote: X means don’t care. (Must be low or high state)DC AND OPERATING CHARACTERISTICS1. Maximum Icc specifications are tested with V CC = V CCmax.ParameterSymbol Test ConditionsMin Typ Max Unit Input leakage current I LI V IN =V SS to V CCQ , V CC=V CCmax-1-1uA Output leakage currentI LO CS=V IH , /ZZ=V IH , OE=V IH or WE=V IL ,V IO =V SS to V CCQ , V CC=V CCmax-1-1uA Average operating currentI CC1Cycle time=1µs, 100% duty, I IO =0mA,CS<0.2V, ZZ=V IH , V IN <0.2V or V IN >V CCQ -0.2V--3mA I CC2Cycle time = Min, I IO =0mA, 100% duty,CS=V IL , ZZ=V IH , V IN =V IL or V IH--25mA Output low voltage V OL I OL = 0.5mA, V CC=V CCmin --0.2*V CCQV Output high voltageV OH I OH = -0.5mA, V CC=V CCmin0.8*V CCQ--VStandby Current (CMOS)I SB1CS,ZZ>V CCQ -0.2V, Other inputs = 0 ~ V CCQ (Typ. condition : V CC =3.0V @ 25o C)(Max. condition : V CC=3.3V @ 85o C)LL --80uARECOMMENDED DC OPERATING CONDITIONS 1)1. T A = -25 to 85o C, otherwise specified2. Overshoot: V CC +1.0 V in case of pulse width < 20ns3. Undershoot: -1.0 V in case of pulse width < 20ns4. Overshoot and undershoot are sampled, not 100% tested .Parameter Symbol Min Typ Max Unit Supply voltage V CC 2.7 3.0 3.3 V V CCQ 2.7 3.0 3.3 V GroundV SS , V SSQ 0 0 0VInput high voltage V IH 0.8 * V CCQ - V CCQ + 0.22) V Input low voltageV IL-0.23)- 0.2 * V CCQVCAPACITANCE 1) (f =1MHz, T A =25o C)1. Capacitance is sampled, not 100% testedItemSymbol Test ConditionMin Max Unit Input capacitance C IN V IN =0V -8pF Input/Ouput capacitanceC IOV IO =0V-8pFAC OPERATING CONDITIONSTest Conditions (Test Load and Test Input/Output Reference)Input Pulse Level : 0.2V to V CCQ-0.2VInput Rise and Fall Time : 5nsInput and Output reference Voltage : V CCQ/2Output Load (See right) : CL1) = 30pF1. Including scope and Jig capacitanceCL1)AC CHARACTERISTICS (V cc = 2.7 to 3.3V, Gnd = 0V, T A = -25C to +85o C)DoutParameter List SymbolSpeedUnit Min MaxRead Read Cycle Time t RC7040k ns Address access time t AA-70ns Chip enable to data output t CO-70ns Output enable to valid output t OE-25ns UB, LB enable to data output t BA -70ns Chip enable to low-Z output t LZ10-ns UB, LB enable to low-Z output t BLZ10-ns Output enable to low-Z output t OLZ5-ns Chip disable to high-Z output t HZ015ns UB, LB disable to high-Z output t BHZ015ns Output disable to high-Z output t OHZ015ns Output hold from Address change t OH5-nsWrite Write Cycle Time t WC7040k ns Chip enable to end of write t CW60-ns Address setup time t AS0-ns Address valid to end of write t AW60-ns UB, LB valid to end of write t BW60-ns Write pulse width t WP50-ns Write recovery time t WR0-ns Write to output high-Z t WHZ015ns Data to write time overlap t DW20-ns Data hold from write time t DH0-ns End write to output low-Z t OW5-nsTIMING DIAGRAMSAddressCS OE Data Outt CO t OHt BA t OEt BHZ t OHZData Vaildt OLZ t BLZt LZ t AAt HZREAD CYCLE (2) (ZZ=WE=VIH)NOTES (READ CYCLE)1. t HZ , t BHZ and t OHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels.2. Do not Access device with cycle timing shorter than t RC for continuous periods > 40us.READ CYCLE (1) (Address controlled, CS=OE=VIL, ZZ=WE=VIH, UB or/and LB=VIL)t RCAddresst AAData OutData Validt OHPrevious Data ValidHigh-Zt RCt WR t WCAddress CS LB, UB Data In t CWt AW t BWt WPt ASt DW t DHWRITE CYCLE (1) (WE controlled, ZZ=OE=VIH)Data ValidHigh-ZData UndefinedData Outt OWt WHZt WRt WCAddressWEData In t CWt AWt BW t WPt ASt DWt DHWRITE CYCLE (2) (CS controlled, ZZ=OE=VIH)Data ValidHigh-ZData OutNOTES (WRITE CYCLE)1. A write occurs during the overlap(t WP among low CS and low WE with asserting UB or LB low for single byte operation or simultaneously asserting UB and LB low for word operation. A write ends at the earliest transition among high CS and high WE. The t WP is measured from the beginning of write to the end of write.2. t CW is measured from CS going low to end od write.3. t AS is measured from the address valid to the beginning of write.4. t WR is measured from the end of write to the address change. t WR applied in case a write ends as CS or WE going high.5. Do not Access device with cycle timing shorter than t WC for continuous periods > 40us.t WRt WCAddressLB, UB WEData In t CWt AWt BW t WPt ASt DWt DHWRITE CYCLE (3) (UB, LB controlled, ZZ=OE=VIH)Data ValidHigh-ZData OutLOW POWER MODESDeep Power Down Mode Entry/Exitt CSZZZZt ZZCSDeep Power Down Entryt RDeep Power Down ExitNormaloperation~~~~t ZZPLow Power Mode CharacteristicsParameter Description Min.Max.Units t ZZCS ZZ low to CS low 0-ns t CSZZ CS high to ZZ high 0-ns t R Operation Recovery Time200-us t ZZPZZ pulse width20-nsParameter Symbol Test ConditionsMin Typ Max Unit Deep Power DownCurrentI ZZZZ < 0.2V, Other inputs = 0 ~ V CCQ(Max. condition : V CC =3.3V @ 85o C)--10uA~~NOTES ( DEEP POWER DOWN )During Deep Power Down mode, all referesh related activity are disabled.TIMING WAVEFORM OF POWER UPV CCCSNOTE . ( POWER UP )1. After Vcc reaches Vcc(Min.) , wait 200us with CS high. Then you get into the normal operation.EM X XX X X X XX X X - XX XX MEMORY FUNCTION GUIDE1. EMLSI Memory2. Device Type3. Density5. Technology6. Operating Voltage8. Version9. Packages10. Speed 7. Organization1. Memory Component2. Device Type6 ------------------------ Low Power SRAM7 ------------------------ STRAM3. Density1 ------------------------- 1M2 ------------------------- 2M4 ------------------------- 4M8 ------------------------- 8M16 ----------------------- 16M32 ----------------------- 32M64 ----------------------- 64M4. Function0 ----------------------- Dual CS1 ----------------------- Single CS2 ----------------------- Multiplexed3----------------------- Single CS with /ZZ 4----------------------- Single CS with /ZZ for Direct DPD mode 5. TechnologyBlank ----------------- CMOSF ------------------------ Full CMOSS ------------------------ Single Transistor6. Operating VoltageBlank ------------------- 5VV ------------------------- 3.3VU ------------------------- 3.0VS ------------------------- 2.5VR ------------------------- 2.0VP ------------------------- 1.8VO ------------------------- 1.5V 7. Organization8 ---------------------- x8 bit16 ---------------------- x16 bit32 ---------------------- x32 bit8. VersionBlank ----------------- Mother dieA ----------------------- First versionB ----------------------- Second versionC ----------------------- Third versionD ----------------------- Fourth versionE ----------------------- Fifth version9. PackageBlank ---------------------- PackageW --------------------- Wafer10. Speed45 ---------------------- 45ns55 ---------------------- 55ns70 ---------------------- 70ns85 ---------------------- 85ns90 ---------------------- 90ns10 --------------------- 100ns12 --------------------- 120ns11. PowerLL ---------------------- Low Low PowerLF ---------------------- Low Low Power(Pb-Free) L ---------------------- Low PowerS ---------------------- Standard Power4. Option11. Power。