SBR20A100CTFP中文资料

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SBR20A300CTB;SBR20A300CT;SBR20A300CTFP;中文规格书,Datasheet资料

20A SBRSUPER BARRIER RECTIFIERFeatures• Low Forward Voltage Drop• Excellent High Temperature Stability• Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability• Lead-Free Finish; RoHS Compliant (Notes 1 & 2) •Also Available in Green Molding CompoundHalogen and Antimony Free. “Green” Device (Note 3)Mechanical Data• Case: TO-220AB, ITO-220AB• Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0• Terminals: Matte Tin Finish annealed over Copper leadframe.Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3• Weight: TO-220AB – 1.85 grams (approximate)ITO-220AB – 1.65 grams (approximate)Ordering Information (Notes 4 & 5)Part Number Case PackagingPbSBR20A300CT TO-220AB 50 pieces/tube GreenSBR20A300CT-G TO-220AB 50pieces/tube PbSBR20A300CTFP ITO-220AB 50 pieces/tube GreenSBR20A300CTFP-G ITO-220AB 50pieces/tube GreenSBR20A300CTFP-JT-GITO-220AB (Alternate)50 pieces/tubeNotes:1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.2. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. For packaging details, go to our website at /datasheets/ap02007.pdf.5. For Green Molding Compound version part numbers, add "-G" suffix to part number above. Examples: SBR20A300CT-G.Marking InformationPackage Pin Out ConfigurationTO-220AB Top ViewITO-220AB Top ViewTO-220AB Bottom ViewITO-220AB Bottom ViewSBR20A300CTFP = Product Type Marking Code AB = Foundry and Assembly Code YYWW = Date Code MarkingYY = Last two digits of year (ex: 06 = 2006) WW = Week (01 - 53)SBR20A300CT = Product Type Marking Code AB = Foundry and Assembly Code YYWW = Date Code MarkingYY = Last two digits of year (ex: 06 = 2006) WW = Week (01 - 53)Maximum Ratings (Per Leg) @T A = 25°C unless otherwise specifiedSingle phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.Characteristic Symbol Value UnitPeak Repetitive Reverse VoltageWorking Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V RM 300 V Average Rectified Output Current (Per Leg) (Total) I O1020 A Non-Repetitive Peak Forward Surge Current 8.3msSingle Half Sine-Wave Superimposed on Rated Load I FSM180 A Peak Repetitive Reverse Surge Current (2uS-1Khz) I RRM 3 A Isolation Voltage (ITO-220AB Only)From terminal to heatsink t = 3 sec. V AC2000 VThermal Characteristics (Per Leg)Characteristic Symbol Value UnitTypical Thermal ResistancePackage = TO-220AB Package = ITO-220ABR θJC 24ºC/W Operating and Storage Temperature Range T J , T STG -65 to +175 ºCElectrical Characteristics (Per Leg) @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionForward Voltage Drop V F- - 0.70 - 0.920.78 1.06 V I F = 10A, T J = 25ºC I F = 10A, T J = 125ºC I F = 20A, T J = 25ºCLeakage Current (Note 6) I R- - 0.110 mA V R = 300V, T J = 25ºC V R = 300V, T J = 125ºCReverse Recovery Time t rr - 25 30 ns I F = 0.5A, I R = 1A, I RR = 0.25A- 28 35I F = 1A, V R = 30Vdi/dt = 100A/μs, T J = 25ºCNotes: 6. Short duration pulse test used to minimize self-heating effect. 7. Using heatsink (by black Aluminum 45mm * 20mm * 12mm)Fig. 1 Forward Power DissipationI , AVERAGE FORWARD CURRENT (A)F(AV)P , P O W E R D I S S I P A T I O N (W )DV , INSTANTANEOUS FORWARD VOLTAGE (mV)Fig. 2 Typical Forward Characteristics F 100I , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )FI , I N S T A N T A N E O U S R E V E R S E C U R R E N T (µA )R Fig. 3 Typical Reverse CharacteristicsV , INSTANTANEOUS REVERSE VOLTAGE (V)R Fig. 4 Forward Current Derating Curve2468T , AMBIENT TEMPERATURE (C)A °I , A V E R A G E F OR W A R D C U R R E N T (A )F (A V )Fig. 5 Operating T emperature DeratingV , DC REVERSE VOLTAGE (V)R T ,D E R A T E D A M B I E N T T E M P E R A T U R E (C )A °Package Outline DimensionsITO-220ABDim Min Typ MaxA 4.50 4.70 4.90A1 3.04 3.24 3.44A2 2.56 2.76 2.96b 0.500.600.75b1 1.10 1.20 1.35c 0.500.600.70D 15.6715.8716.07D1 8.999.199.39e 2.54E 9.9110.1110.31L 9.459.7510.05L1 15.8016.0016.20P 2.98 3.18 3.38Q 3.10 3.30 3.50All Dimensions in mm TO-220ABDim Min Typ MaxA 3.56- 4.82A1 0.51- 1.39A2 2.04- 2.92b 0.390.81 1.01b2 1.15 1.24 1.77c 0.356- 0.61D 14.22- 16.51D1 8.39- 9.01e 2.54e1 5.08E 9.66- 10.66H1 5.85- 6.85L 12.70- 14.73L1 - - 6.35P 3.54- 4.08Q 2.54- 3.42All Dimensions in mmITO220ABDim Min MaxA 4.36 4.77A1 2.54 3.10A2 2.54 2.80b 0.55 0.75b1 1.20 1.50c 0.38 0.68D 14.5015.50D1 8.38 8.89e 2.41 2.67E 9.72 10.27L 9.87 10.67L1 15.8 17.00P 3.08 3.39Q 2.60 3.00All Dimensions in mmPIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2012, Diodes Incorporated分销商库存信息:DIODESSBR20A300CTB SBR20A300CT SBR20A300CTFP。

SBR20100CTF中文资料

Major ratings and characteristicsValues UnitsDevice optimized for high temperature 20APower Supply applications100V 0.67V, typ -65 to 175O CELECTRICAL:MECHANICAL:* Low Forward Voltage Drop* Reliable High Temperature Operation ITO-220 packages* Super Barrier Design* Softest, Fast Switching Capability* 175O C Operating Junction Temperature Version 2.0 - April 20061SBR20100CT * Molded Plastic TO-220AB, TO-262, TO-263, and SBR20100CTF SBR20100CTI Tj (operating/storage)Using state-of-the-art SBR IC process technology,the following features are made possible in a single device:CharacteristicsI F(AV) Rectangular Waveform V F @10A, Tj=125OCV RRMSBR20100CTB________________________________________________________________________________________________SYMBOLUNITSV RM V RWM V RRM VoltsI O Amps I FSM Amps I RRMAmpsV F VoltsI R*uA mA dv/dt V/uSR θJC OC/WT JOC* Pulse width < 300 uS, Duty cycle < 2% Version 2.0 - April 20062Peak Forward Surge Current - 1/2 60hz DC Blocking VoltageWorking Peak Reverse Voltage Peak Repetitive Reverse VoltageMaximum Ratings and Electrical Characteristics (at 25O C unless otherwise specified)SBR20100CTF SBR20100CT 100Typ ------Max 0.820.75SBR20100CTBSBR20100CTI Instantaneous Forward Voltage (per leg) I F = 10A; T J = 25O CI F = 10A; T J = 125O C Average Rectified Forward Current(Rated V R -20Khz Square Wave) - 50% duty cycle________________________________________________________________________________________________Peak Repetitive Reverse Surge Current (2uS-1Khz)12020-65 to +175242Maximum Rate of Voltage Change (at Rated V R )Maximum Instantaneous Reverse Current at Rated V RM T J = 25O CT J = 125O CMax 1001010,000Typ ------Operating and Storage Junction TemperatureMaximum Thermal Resistance JC (per leg)Package = TO-220AB, TO-262, & TO-263Package = ITO-220Figure 2: Typical Forward Voltage Version 2.0 - April 20063________________________________________________________________________________________________SBR20100CT SBR20100CTF Figure 1: Typical Reverse Current SBR20100CTI Figure 3: Current Derating, CaseSBR20100CTBAPD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APD SEMICONDUCTOR does not convey any license under its patent rights nor the rights of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or otherapplications intended to support or sustain life, or for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer purchase or use APD SEMICONDUCTOR products for any such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent regarding the design or manufacture of the part..1 Lagoon Drive, Suite 410, Redwood City, CA 94065, USA Ph: 650 508 8896 FAX: 650 508 8865Homepage: email: info@。

SBR20U60CT中文资料

20A SBR®Super Barrier RectifierFeatures MechanicalData• Case Material: Molded Plastic, UL FlammabilityClassification Rating 94V-0• Moisture Sensitivity: Level 1 per J-STD-020C• Terminals: Matte Tin Finish annealed overCopper leadframe. Solderable per MIL-STD-202,Method 208• Marking: See Page 3• Ordering Information: See Page 3• Low Forward Voltage Drop• Excellent High Temperature Stability• Super Barrier Design• Soft, Fast Switching Capability• Molded Plastic TO-220AB,and ITO-220AB packages• Lead Free Finish, RoHS Compliant (Note 2)Maximum Ratings @ T A = 25ºC unless otherwise specifiedSingle phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.Characteristic SymbolValueUnit Peak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageV RRMV RWMV RM60 VRMS Reverse Voltage V R(RMS)42 VAverage Rectified Output Current @ T C = 110ºC I O20 ANon-Repetitive Peak Forward Surge Current 8.3msSingle Half Sine-Wave Superimposed on Rated LoadI FSM200 APeak Repetitive Reverse Surge Current (2uS-1Khz) I RRM 3 AMaximum Thermal Resistance (per leg)Package = TO-220ABPackage = ITO-220ABRӨJC 24°C/WOperating and Storage Temperature Range T J, T STG-65 to +150 ºCElectrical Characteristics@ T A = 25ºC unless otherwise specifiedCharacteristic SymbolMin Typ Max Unit Test ConditionReverse Breakdown Voltage (Note 1) V(BR)R60 - - V I R = 0.5 mAForward Voltage Drop V F--0.45-0.570.470.71VI F = 10A, T J = 25ºCI F = 10A,T J = 125ºCI F = 20A, T J = 25ºCLeakage Current (Note 1) I R- -0.5100mAV R = 60V, T J= 25 ºCV R = 60V, T J = 125 ºCNotes:1. Short duration pulse test used to minimize self-heating effect.2. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.__________SBR is a registered trademark of Diodes Incorporated.Package Outline DrawingsTO-220ABITO-220ABTO-220ABDIM. MIN. MAX.A 4.47 4.67 b 0.71 0.91 b1 1.17 1.37 c 0.31 0.53 D 14.65 15.35 D1 8.50 8.90 E 10.01 10.31 e 2.54 typ e1 4.98 5.18 F 1.17 1.37 J1 2.52 2.82 L 13.40 13.80 L1 3.56 3.96 ØP 3.735 3.935 Q 2.59 2.89All Dimensions in MillimetersITO-220ABDIM. MIN. MAX.A 4.30 4.70b 0.50 0.75 b1 1.10 1.35 b2 1.50 1.75c 0.50 0.75 D 14.80 15.20 E 9.96 10.36 e 2.54 typ F 2.80 3.20 J1 2.50 2.90 L 12.80 13.60 L1 1.70 1.90 ØP 3.50 typ Q 2.70 typAll Dimensions in MillimetersMarking, Polarity, Weight & Ordering InformationSBR20U60CT SBR20U60CTFP Case StyleTO-220AB ITO-220ABtAnodeCommonCathode AnodePolarityCasetAnodeCommonCathode AnodeMarking2.1g 1.9gWeightOrderingInformationSBR20U60CT SBR20U60CTFP50 pieces/tube50 pieces/tubeYY = Last two digits of year, ex = 06 = 2006Date CodeWW = Week (01-52)Other MarkingInformationA = Foundry CodeB = Assembly CodeIMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changeswithout further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any productdescribed herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shallassume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed writtenapproval of the President of Diodes Incorporated.。

SBR20200F中文资料

10
5
125¢J
75¢J 25¢J 1
0 20 50 100 150 190
Tc, Case Temperature (¢J)
Typical Junction Capacitance
800
0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Forward Voltage (V)
Junction Capacitance (pF)
RATING AND CHARACTERISTIC CURVES
Typical Forward Current Derating Curve
15
Typical Forward Characteristic
100
Average Forward Current (A); per Leg
10
Instantaneous Forward Current (A),Per Leg
Number of Cycles at 60Hz
Any changing of specification will not be informed individua l

01-Jun-2006 Rev. A
Page 2 of 2
元器件交易网
SBR20200F
Elektronische Bauelemente
VOLTAGE 200V 20 .0AMP Schottky Barrier Rectifiers
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
2.54
0.2
0.7 2.54

安东帕流变学入门手册WEB

1
安东帕流变仪入门手册 3.1. 温度范围在-40~200℃内的 Peltier 控温系统 ...................................................... 27 3.2 温度范围在-130~400℃内的电加热控温系统 ....................................................... 28 3.3 强制对流辐射控温系统........................................................................................ 29 四. 流变仪安装的条件要求 ............................................................................................... 30 4.1 环境要求 ............................................................................................................. 30 4.2 电源 .................................................................................................................... 30 4.3 安装空间的布置： ............................................................................................... 30 4.4. 气源（空气轴承流变仪） .................................................................................. 31 五. 流变仪可以扩展的功能模块 – 组合流变测量技术简介 ................................................ 32 5.1 通过改变样品的受力方式、运动方式而拓展的附加测试功能 .............................. 32 5.2 把流变测试与结构分析方法相结合的附件 ........................................................... 32 5.3 在温度、剪切条件的基础上再增加其他影响因素的测试附件 .............................. 33 第三部分：服务与应用 ............................................................................................................ 34 一. 安东帕流变仪的售后服务方式 .................................................................................... 34 1.1 售后服务方式与联系方式 .................................................................................... 34 1.2 应用支持方式与联系方式 .................................................................................... 34 二. 流变仪的日常维护保养 ............................................................................................... 34 2.1 附属设备 ............................................................................................................. 34 2.2 流变仪主机 ......................................................................................................... 35

TPB120中文资料

TPB SERIES®BIDIRECTIONAL CROWBAR PROTECTION.VOLTAGERANGE:FROM 62V TO 270V.HOLDING CURRENT :I H =150mA min.REPETITIVE PEAK PULSE CURRENT :I PP =100A,10/1000µs.UL RECOGNIZED FILE #E136224FEATURESCB429The TPB series are TRISIL devices especially de-signed for protecting sensitive telecommunication equipment against lightning and transient voltages induced by AC power lines.They are available in the CB429axial package.TRISIL devices provide bidirectional protection by crowbar action.Their characteristic response to transient overvoltages makes them particularly suited to protect voltage sensitive telecommunica-tion equipment.DESCRIPTIONSCHEMATIC DIAGRAMTRISIL TMOctober 1998-Ed:6ACOMPLIES WITH THE FOLLOWING STANDARDS:Peak Surge Voltage (V)Voltage Waveform (µs)Current Waveform (µs)AdmissibleIpp (A)Necessary Resistor (Ω)CCITT K20400010/7005/310100-VDE0433400010/7005/310100-VDE08784000 1.2/501/20100-IEC-1000-4-5level 4level 410/7001.2/505/3108/20100100--FCC Part 68,lightning surge type A150080010/16010/56010/16010/560200100--FCC Part 68,lightning surge type B1005/3205/32025-BELLCORETR-NWT-001089First level250010002/1010/10002/1010/1000500100--BELLCORETR-NWT-001089Second level 5002/102/10500-CNET l31-2440000.5/7000.8/310100-1/5Symbol ParameterValue Unit R th (j-l)Junction to leads (L lead =10mm)20°C/W R th (j-a)Junction to ambient on printed circuit (L lead =10mm)75°C/WTHERMAL RESISTANCES TypeI RM @V RM I R @V R V BO @I BO I H C max.max.note1max.note2min.note3max.note4µAVµAVVmAmApFTPB62TPB68TPB100TPB120TPB130TPB180TPB200TPB220TPB240TPB27022222222225661901081171621801982162435050505050505050505062681001201301802002202402708290133160173240267293320360800800800800800800800800800800150150150150150150150150150150300300200200200200200200200200Note 1:I R measured at V R guarantees V BRmin ≥V R Note 2:Measured at 50Hz (1cycle)-See test circuit 1.Note 3:See test circuit 2.Note 4:V R =1V,F =1MHz,refer to fig.3for C versus V R.Symbol ParameterV RM Stand-offvoltageI RM Leakage current at stand-off voltage V R Continuous Reverse voltage V BR Breakdown voltage V BO Breakover voltage I H Holding current I BO Breakover current I PP Peak pulse current C CapacitanceELECTRICAL CHARACTERISTICS (T amb =25°C)Symbol ParameterValue Unit P Power dissipation on infinite heatsinkT amb =50 °C 5W I PPPeak pulse current10/1000µs 8/20µs 2/10µs 100150500AI TSM Non repetitive surge peak on-state current tp =20ms 50A I 2t I 2t value for fusingtp =20ms 25A 2s dV/dt Critical rate of rise of off-state voltage V RM5kV/µs T stg T j Storage temperature range Maximum junction temperature-55to +150150°C °C T LMaximum lead temperature for soldering during 10s at 5mm for case230°CABSOLUTE MAXIMUM RATINGS (T amb =25°C)TPB SERIES2/5TEST CIRCUIT 1FOR I BO andV BO parameters:220Vstatic relay.R1R2240140D.U.TV BO measureI BO measuretp =20msKTransformer 220V/800V5AAutoTransformer 220V/2AV outTEST PROCEDURE :Pulse Test duration (tp =20ms):-For Bidirectional devices =SwitchK is closed -For Unidirectional devices =Switch K is open.V OUT Selection-Device with V BO ≤200Volt-V OUT =250V RMS ,R 1=140Ω.-Device with V BO ≥ 200Volt-V OUT =480V RMS ,R 2=240Ω.TEST CIRCUIT 2for I H parameterThis is a GO-NO GO test which allows to confirm the holding current (I H )level in a functionaltest circuit.TEST PROCEDURE :-Adjust the current level at the I H value by short circuiting the D.U.T.-Fire the D.U.T.with a surge current :I pp =10A,10/1000µs.-The D.U.T.will come back to the off-state within 50ms max.R-V PV BAT =-48VSurge generatorD.U.T .TPB SERIES3/5Fig.1:Non repetitive surge peak on-state current versus overload duration (Tj initial=25°C).Fig.4:On-state current versus on-state voltage (typical values).Fig.3:Relative variation of junction capacitance versus reverse applied voltage(typical values).Note:For V RM upper than 56V,the curve is extrapolated(dotted line).Fig.2:Relative variation of holding current versus junction temperature.Fig.5:Transient thermal impedance junction to ambient versus pulse duration (for FR4PC Board with T Lead =10mm).TPB SERIES4/5PACKAGE MECHANICAL DATA.CB429PlasticCABO /O /DO /DCORDER CODETPB 100RLBREAKDOWN VOLTAGEPACKAGING:RL =tape and reel.=Ammopack.TRISIL PROTECTION 100APackaging :Standardpackagingis in tape andreel.MARKING :Logo,Date Code,Part Number.Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-proval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics ©1998STMicroelectronics -Printed in Italy -All rights reserved.STMicroelectronics GROUP OF COMPANIESAustralia -Brazil -Canada -China -France -Germany -Italy -Japan -Korea -Malaysia -Malta -Mexico -Morocco -The Netherlands -Singapore -Spain -Sweden -Switzerland -Taiwan -Thailand -United Kingdom -U.S.A.REF.DIMENSIONSMillimeters InchesMin.Typ.Max.Min.Typ.Max.A 9.459.509.800.3720.3740.386B 26 1.024∅C4.905.00 5.100.1930.1970.201∅D0.941.00 1.060.0370.0390.042L1 1.270.050note 1:the lead is not controlledin zone L 1Weight :0.85gTPB SERIES5/5。

MBR20H100CT中文资料

MBR20H100CT , MBRF20H100CT & MBRB20H100CT SeriesVishay Semiconductorsformerly General SemiconductorDocument Number New ProductCase:JEDEC TO-220AB, ITO-220AB, TO-263AB & TO-262AA molded plastic bodyTerminals:Plated leads, solderable per MIL-STD-750, Method 2026High temperature soldering guaranteed:250°C/10 seconds, 0.25" (6.35mm) from case (TO-220AB,ITO-220AB & TO-252AA) at terminals (TO-236AB)Polarity:As marked Mounting Position: Any Mounting Torque:10 in-lbs maximum Weight:0.08 oz., 2.24 g• Plastic package has Underwriters Laboratory Flammability Classification 94V-0• Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency• Guardring for overvoltage protection• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applicationsMBR20H100CT , MBRF20H100CT & MBRB20H100CT SeriesVishay Semiconductorsformerly General Semiconductor Document Number 88673Maximum Ratings (TC= 25°C unless otherwise noted)ParameterSymbol MBR20H90CTMBR20H100CTUnit Maximum repetitive peak reverse voltage V RRM 90100V Working peak reverse voltage V RWM 90100V Maximum DC blocking voltageV DC90100V Maximum average forward rectified current Total device20Per legI F(AV)10A Peak forward surge current8.3ms single half sine-wave superimposed I FSM 250A on rated load (JEDEC Method) per legPeak repetitive reverse current per leg at t p = 2µs, 1KH Z I RRM 1.0A Voltage rate of change (rated V R )dv/dt 10,000V/µs Operating junction and storage temperature range T J , T STG –65 to +175°C RMS Isolation voltage (MBRF type only) from terminals 4500(1)to heatsink with t = 1 second, RH ≤30%V ISOL3500(2)V1500 (3)Electrical Characteristics (TC= 25°C unless otherwise noted)ParameterSymbolValue UnitMaximum instantaneous I F = 10A,T C = 25°C 0.77forward voltage per leg at (4):I F = 10A,T C = 125°C 0.64I F = 20A,T C = 25°C V F 0.88V I F = 20A,T C = 125°C 0.73Maximum reverse current per leg T J = 25°C 4.5µA at working peak reverse voltageT J = 125°CI R6.0mAThermal Characteristics (TC= 25°C unless otherwise noted)ParameterSymbol MBR MBRF MBRB Unit Typical thermal resistance per legR ΘJC2.05.82.0°C/WNotes:(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)(4) Pulse test: 300µs pulse width, 1% duty cycleOrdering InformationProductCase Package CodePackage OptionMBR20H90CT - MBR20H100CT TO-220AB 45Anti-Static tube, 50/tube, 2K/carton MBRF20H90CT - MBRF20H100CT ITO-220AB 45Anti-Static tube, 50/tube, 2K/carton 3113” reel, 800/reel, 4.8K/cartonMBRB20H90CT - MBRB20H100CTTO-263AB45Anti-Static tube, 50/tube, 2K/carton81Anti-Static 13” reel, 800/reel, 4.8K/cartonMBR20H100CT , MBRF20H100CT & MBRB20H100CT SeriesVishay Semiconductorsformerly General SemiconductorDocument Number Ratings andCharacteristic Curves per leg (TA= 25°C unless otherwise noted)481220160.11101001000Fig. 1 — Forward Current Derating CurveFig. 2 — Maximum Non-Repetitive PeakForward Surge Current Per Leg0.010.1110。

SBR30A40CT;SBR30A40CTFP;中文规格书,Datasheet资料

SBR is a registered trademark of Diodes Incorporated.30A SBRSUPER BARRIER RECTIFIERFeatures• Low Forward Voltage Drop• Excellent High Temperature Stability• Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability• Lead Free Finish, RoHS Compliant (Note 1)• Also Available in Green Molding Compound (Note 2)Mechanical Data• Case: TO-220AB, ITO-220AB• Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0• Terminals: Matte Tin Finish annealed over Copper leadframe.Solderable per MIL-STD-202, Method 208 • Weight: TO-220AB – 1.85 grams (approximate)ITO-220AB – 1.65 grams (approximate)Ordering Information (Notes 2 and 3)Part Number Case PackagingSBR30A40CT TO-220AB 50 pieces/tube SBR30A40CT-G TO-220AB50 pieces/tube SBR30A40CTFP ITO-220AB 50pieces/tube SBR30A40CTFP-G ITO-220AB 50 pieces/tube SBR30A40CTFP-JT ITO-220AB (Alternate)50 pieces/tubeNotes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes . 2. For Green Molding Compound version part numbers, add "-G" suffix to part number above. Examples: SBR30A40CT-G. 3. For packaging details, go to our website at .Marking InformationTO-220AB Top View ITO-220AB Top View Package Pin Out ConfigurationTO-220AB Bottom View ITO-220AB Bottom ViewSBR30A40CTFP = Product Type Marking Code AB = Foundry and Assembly Code YYWW = Date Code MarkingYY = Last two digits of year (ex: 06 = 2006) WW = Week (01-52)SBR30A40CT = Product Type Marking Code AB = Foundry and Assembly Code YYWW = Date Code MarkingYY = Last two digits of year (ex: 06 = 2006) WW = Week (01-52)SBR is a registered trademark of Diodes Incorporated.Maximum Ratings @T A = 25°C unless otherwise specifiedSingle phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.Characteristic Symbol Value Unit Peak Repetitive Reverse VoltageWorking Peak Reverse Voltage DC Blocking VoltageV RRM V RWM V RM 40 VAverage Rectified Output Current @ T C = 110ºC I O 30 ANon-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load I FSM 250 APeak Repetitive Reverse Surge Current (2uS-1Khz) I RRM 3 AIsolation Voltage (ITO-220AB Only) From terminal to heatsink t = 3 sec. V AC2000 VThermal CharacteristicsCharacteristic Symbol Value UnitTypical Thermal Resistance (per leg)Package = TO-220AB Package = ITO-220ABR θJC2 4 ºC/W Operating and Storage Temperature Range T J , T STG-65 to +150ºCElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristicSymbol Min Typ Max UnitTest ConditionForward Voltage Drop V F -- 0.420.50 0.45V I F = 15A, T J = 25ºC I F = 15A, T J= 125ºC Leakage Current (Note 4)I R- -0.5100mAV R = 40V, T J = 25ºC V R = 40V, T J = 125ºCNotes: 4. Short duration pulse test used to minimize self-heating effect.255075100125150T C CASE TEMPERATURE (°C)I F (A V E ), A V E R A G E F O R W A R D C U R R E N T (A )Figure 1: Current Derating Curve, Per ElementSBR is a registered trademark of Diodes Incorporated.V , INSTANTANEOUS FORWARD VOLTAGE (mV)Fig. 2 F Typical Forward CharacteristicsV , INSTANTANEOUS REVERSE VOLTAGE (V)Fig. 3 Typical Reverse CharacteristicsR I , I N S T A N T A N E O U S R E V E R S E C U R R E N T (µA )RPackage Outline DimensionsNotes:5. For product manufactured with Date Code 0733 (week 33, 2007) and newer, please refer to ITO-220AB dimensions. For product manufactured prior to Date Code 0733, please refer to ITO-220AB ALTERNATE dimensions.ITO-220AB (Note 5)Dim Min Typ Max A 4.50 4.70 4.90A1 3.04 3.24 3.44A2 2.56 2.76 2.96b 0.500.600.75b1 1.10 1.20 1.35c 0.500.600.70D 15.6715.8716.07D1 8.999.199.39e 2.54E 9.9110.1110.31L 9.459.7510.05L1 15.8016.0016.20P 2.98 3.18 3.38Q 3.10 3.30 3.50All Dimensions in mmTO-220ABDim Min Typ MaxA 3.56- 4.82A1 0.51- 1.39A2 2.04- 2.92b 0.390.81 1.01b2 1.15 1.24 1.77c 0.356- 0.61D 14.22- 16.51D1 8.39- 9.01e 2.54 e1 5.08 E 9.66- 10.66H1 5.85- 6.85L 12.70- 14.73L1 - - 6.35P 3.54- 4.08Q 2.54- 3.42All Dimensions in mmITO-220AB ALTERNATE (Note 5)DIM. MIN. MAX. A 4.30 4.70 A1 1.3 b 0.50 0.75 b1 1.10 1.35 b2 1.50 1.75 c 0.50 0.75 D 14.80 15.20 E 9.96 10.36 e 2.54 typ F 2.80 3.20 J1 2.50 2.90 L 12.80 13.60 L1 1.70 1.90 L2 1.90 2.10 ØP 3.50 typ Q 2.70 typ All Dimensions in mmIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2011, Diodes IncorporatedSBR is a registered trademark of Diodes Incorporated.分销商库存信息:DIODESSBR30A40CT SBR30A40CTFP。

MBR20200CTP中文资料

MBR20200CTP SWITCHMODE™ PowerDual Schottky Rectifiering Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs.They block up to 200 volts and offer improved Schottky performance at frequencies from 250 kHz to 5.0 MHz.•200 Volt Blocking Voltage•Low Forward V oltage Drop•Guardring for Stress Protection and High dv/dt Capability (10,000 V/µs)•Dual Diode Construction — Terminals 1 and 3 Must be Connected for Parallel Operation at Full RatingMechanical Characteristics•Case: Epoxy, Molded•Weight: 1.9 grams (approximately)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead Temperature for Soldering Purposes:260°C Max. for 10 Seconds•Shipped 50 units per plastic tube•Marking: B20200PMAXIMUM RATINGS (Per Leg)Device Package Shipping ORDERING INFORMATIONMBR20200CTP TO–22050 Units/RailTHERMAL CHARACTERISTICS (Per Leg)ELECTRICAL CHARACTERISTICS (Per Leg)DYNAMIC CHARACTERISTICS (Per Leg)1001010.1i F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )Figure 3. Typical Reverse Current V R , REVERSE VOLTAGE (VOLTS)Figure 4. Typical CapacitanceV R , REVERSE VOLTAGE (VOLTS)I R , R E V E R S E C U R R E N T (A )Figure 5. Current Derating, Case, Per Diode T C , CASE TEMPERATURE (°C)Figure 6. Forward Power Dissipation, Per DiodeI F(AV), AVERAGE FORWARD CURRENT (AMPS)I F (A V ), A V E R A G E F O R W A R D C U R R E N T (A )PACKAGE DIMENSIONSTO–220THREE–LEADTO–220ABCASE 221A–09ISSUE AASWITCHMODE is a trademark of Semiconductor Components Industries, LLC.ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATIONCENTRAL/SOUTH AMERICA:Spanish Phone:303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)Email:ONlit–spanish@Toll–Free from Mexico: Dial 01–800–288–2872 for Access –then Dial 866–297–9322ASIA/PACIFIC: LDC for ON Semiconductor – Asia SupportPhone:303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)Toll Free from Hong Kong & Singapore:001–800–4422–3781Email: ONlit–asia@JAPAN: ON Semiconductor, Japan Customer Focus Center4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031Phone: 81–3–5740–2700。

PBYR1540CTF中文资料

0.9 0.7 2.54
top view
0.55 max 1.3
Fig.7. SOT186; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
The PBYR1545CTF series is supplied in the SOT186 package. The PBYR1545CTX series is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN
DESCRIPTION
CONDITIONS
Visol
Peak isolation voltage from SOT186 package; R.H. ≤ 65%; clean and
all terminals to external
dustfree
heatsink
Visol
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;
October 1998
4
Rev 1.300
元器件交易网
Philips Semiconductors
Rectifier diodes Schottky barrier
Product specification
PBYR1545CTF, PBYR1545CTX series

BTA20-700BW中文资料

September2001-Ed:1A SNUBBERLESS TRIACSSymbol Parameter Value Unit I T(RMS)RMS on-state current(360°conduction angle)BTA Tc=70°C20ABTB Tc=90°CI TSM Non repetitive surge peak on-state current(Tj initial=25°C)tp=8.3ms210A tp=10ms200I2t I2t value tp=10ms200A2sdI/dt Critical rate of rise of on-state currentGate supply:I G=500mA dI G/dt=1A/µsRepetitiveF=50Hz20A/µs Non repetitive100Tstg Tj Storage and operating junction temperature range-40to+150-40to+125°CTl Maximum lead soldering temperature during10s at4.5mm from case260°C ABSOLUTE RATINGS(limiting values)Symbol Parameter BTA/BTB20-...BW/CWUnit 600700V DRMV RRMRepetitive peak off-state voltage Tj=125°C600700V1/6BTA20 BW/CW BTB20 BW/CW2/6Symbol Parameter Value Unit Rth(j-a)Junction to ambient60°C/WRth(j-c)DC Junction to case for DC BTA 2.8°C/WBTB 1.7Rth(j-c)AC Junction to case for360°conduction angle(F=50Hz)BTA 2.1°C/WBTB 1.3GATE CHARACTERISTICS(maximum values)P G(AV)=1W P GM=10W(tp=20µs)I GM=4A(tp=20µs)V GM=16V(tp=20µs)THERMAL RESISTANCESymbol Test conditions QuadrantBTA/BTB20Unit BW CWI GT V D=12V(DC)R L=33ΩTj=25°C I-II-III MIN.21mAMAX.5035V GT V D=12V(DC)R L=33ΩTj=25°C I-II-III MAX. 1.5V V GD V D=V DRM R L=3.3kΩTj=125°C I-II-III MIN.0.2V tgt V D=V DRM I G=500mAdI G/dt=3A/µsTj=25°C I-II-III TYP.2µs I L I G=1.2I GT Tj=25°C I-III TYP.50-mAII90-I-II-III MAX.-80I H*I T=500mA Gate open Tj=25°C MAX.7550mA V TM*I TM=28A tp=380µs Tj=25°C MAX. 1.70VI DRM I RRM V DRM ratedV RRM ratedTj=25°C MAX.0.01mATj=125°C MAX.3dV/dt*Linear slope up toV D=67%V DRM gate openTj=125°C TYP.750500V/µsMIN.500250(dI/dt)c*Without snubber Tj=125°C TYP.3622A/msMIN.1811*For either polarity of electrode A2voltage with reference to electrode A1ELECTRICAL CHARACTERISTICSBTA20 BW/CW BTB20 BW/CW3/6Package I T(RMS)V DRM /V RRMSensitivity SpecificationA V BW CW BTA(Insulated)20600X X 700XX BTB(Uninsulated)600XPRODUCT INFORMATIONORDERING INFORMATIONBTA20 BW/CW BTB20 BW/CW4/6Fig.3:Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase)for different thermal resistances heatsink +contact(BTB).Fig.4:RMS on-state current versus case temper-ature.1E-31E-21E-11E+01E+11E+25E+2Zth/Rth Fig.5:Relative variation of thermal impedance versus pulseduration.Fig.6:Relative variation of gate trigger current and holding current versus junctiontemperature.Fig.1:Maximum RMS power dissipation versus RMS on-state current (F =50Hz).(Curves are cut off by (dI/dt)climitation)Fig.2:Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase)for different thermal resistances heatsink +contact (BTA).BTA20 BW/CW BTB20 BW/CW5/6Fig.9:On-state characteristics (maximumvalues).Fig.7:Non repetitive surge peak on-state current versus number ofcycles.Fig.8:Non repetitive surge peak on-state current for a sinusoidal pulse with width:t ≤10ms,and cor-responding value of I 2t.BTA20 BW/CW BTB20 BW/CW6/6Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-proval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics ©2001STMicroelectronics -Printed in Italy -All rights reserved.STMicroelectronics GROUP OF COMPANIESAustralia -Brazil -China -Finland -France -Germany -Hong Kong -India -Italy -Japan -MalaysiaMalta -Morocco -Singapore -Spain -Sweden -Switzerland -United Kingdom -U.S.A.Ordering type Marking Package Weight Base qty Delivery modeBTA/BTB20-xxxyzBTA/BTB20-xxxyzTO-220AB2.3g250Bulks Epoxy meets UL94,V0s Cooling method:Cs Recommended torque value:0.8m.N.sMaximum torque value:1m.N.OTHER INFORMATIONPACKAGE MECHANICAL DATA。

百灵达中文操作说明

操作步骤1 将水样加入试管直至10ml刻度线（执行空白检测）2 加入一片碱度试剂片，碾碎、搅拌使之溶解3 将水样静置1分钟后重新混匀水样。

4 在光度计上选择Phot 2号检测程序。

5 参照光度计操作手册说明，用光度计读取测量值6 测量结果以为mg/l CaCO3单位显示注：如将碱度表示方式由CaCO3转化为HCO3-请乘以系数1.22。

____________________________水样采集由于铝极容易吸附在采样杯的表面，特别是玻璃材质的采样杯。

为了防止铝的丢失，请用塑料瓶盛放水样并尽快完成分析。

采样瓶需要在进行酸洗并用去离子水冲洗干净后才能重复使用。

操作步骤1 将水样加入试管直至10ml刻度线（执行空白检测）2 加入一片铝试剂片1号，碾碎、搅拌使之溶解3 加入一片铝试剂片2号，碾碎、慢慢搅拌使之溶解，请不要剧烈搅动4 静置5分钟，使之完全显色5 在光度计上选择Phot 3铝检测程序6 将试管放入光度计进行测量（参照光度计说明书）7 测量结果的单位为mg/l Al.干扰聚磷酸盐或氟离子的存在会导致测量结果偏低。

常规水样中的聚磷酸盐含量极少，所以由它产生的干扰不多。

氟离子仅在自来水厂的加氟处理工艺中才会使用，这种情况下，请在加氟处理步骤前对水样进行监测。

如待分析水样为加氟处理后的水样，如供水系统中的水样或者含氟天然水体，所测得的铝离子浓度需要进行修正。

修正方法为：在测得的铝离子浓度基础上乘以（1+0.4F），其中F为氟离子浓度（mg/l F）。

氟离子浓度的检测方法见Phot 14 氟离子检测方法。

一些工业废水。

氨氮对鱼类和其它水生生物是有害的，渔场和水族馆用水的氨氮浓度必须进行严格控制。

氨氮检测是地表水、海水、工业废水和污水水质例行检测的重要参数。

百灵达氨氮测量法可以测量0 - 1.0 mg/l N浓度范围的水中氨氮（氨态氮）含量。

测量原理百灵达氨氮测量法的测量原理为水杨酸盐比色法。

碱性并有余氯存在的条件下，氨与水杨酸盐反应生成蓝绿色的靛酚化合物。

SBR20A100CTFP;SBR20A100CT;中文规格书,Datasheet资料

20A SBRSUPER BARRIER RECTIFIERFeatures• Low Forward Voltage Drop• Excellent High Temperature Stability• Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability• Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Also Available in Green Molding Compound (Note 3)Halogen and Antimony Free. “Green” Device (Note 4)Mechanical Data• Case: TO-220AB, ITO-220AB• Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0• Terminals: Matte Tin Finish annealed over Copper leadframe.Solderable per MIL-STD-202, Method 208 • Weight: TO-220AB – 1.85 grams (approximate)ITO-220AB – 1.65 grams (approximate)Ordering Information (Notes 3 & 4)Part Number Case PackagingSBR20A100CT TO-220AB 50pieces/tube SBR20A100CTFP ITO-220AB 50 pieces/tube SBR20A100CT-G TO-220AB 50pieces/tube SBR20A100CTFP-G ITO-220AB 50 pieces/tube SBR20A100CTFP-JT-G ITO-220AB (Alternate)50 pieces/tubeNotes:1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.2. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. For Green Molding Compound version part numbers, add "-G" suffix to part number above. Examples: SBR20A100CT-G.4. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.Marking InformationTO-220AB Top ViewITO-220ABTop View Package Pin Out ConfigurationTO-220AB Bottom ViewITO-220AB Bottom ViewSBR20A100CTFP = Product Type Marking Code AB = Foundry and Assembly Code YYWW = Date Code MarkingYY = Last two digits of year (ex: 06 = 2006) WW = Week (01 - 53)SBR20A100CT = Product Type Marking Code AB = Foundry and Assembly Code YYWW = Date Code MarkingYY = Last two digits of year (ex: 06 = 2006) WW = Week (01 - 53)Maximum Ratings (Per Leg) @T A = 25°C unless otherwise specifiedSingle phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.Characteristic Symbol Value UnitPeak Repetitive Reverse VoltageWorking Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V RM 100 V Average Rectified Output Current per Device (Per Leg) (Total) I O1020 A Non-Repetitive Peak Forward Surge Current 8.3msSingle Half Sine-Wave Superimposed on Rated LoadI FSM250 A Peak Repetitive Reverse Surge Current (2uS-1Khz) I RRM3 A Isolation Voltage (ITO-220AB Only)From Terminal to Heatsink t = 3 sec V AC2000 VThermal Characteristics (Per Leg)Characteristic Symbol Value UnitTypical Thermal ResistancePackage = TO-220AB Package = ITO-220ABR θJC2 4 ºC/W Operating and Storage Temperature Range T J , T STG-65 to +175 ºCElectrical Characteristics (Per Leg) @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionForward Voltage Drop V F- - 0.60 - 0.750.64 0.85 V I F = 10A, T J = 25ºC I F = 10A, T J = 125ºC I F = 20A, T J = 25ºCLeakage Current (Note 5) I R- - 0.110 mA V R = 100V, T J = 25ºC V R = 100V, T J = 125ºCNotes:5. Short duration pulse test used to minimize self-heating effect.I , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )F V , INSTANTANEOUS FORWARD VOLTAGE (V)F Fig. 1 Typical Forward CharacteristicsI , I N S T AN T A N E O U S R E V E R S E C U R R E N T (µA )V , INSTANTANEOUS REVERSE VOLTAGE (V)R Fig. 2 Typical Reverse CharacteristicsT , CASE TEMPERATURE (°C)C Fig. 3 Forward Current Derating Curve, Per ElementI , A V E R A G E F O R W A R D C U R R E N T (A )F (A V )I , AVERAGE FORWARD CURRENT (A)F(AV)Fig. 4 Forward Power DissipationP , P O W E R D I S S I P A T I O N (W )DPackage Outline DimensionsNotes:6. For product manufactured with Date Code 0733 (week 33, 2007) and newer, please refer to ITO-220AB dimensions. For product manufactured prior to Date Code 0733, please refer to ITO-220AB ALTERNATE dimensions.ITO-220AB(Note 5)Dim Min Typ Max A 4.50 4.70 4.90A1 3.04 3.24 3.44A2 2.56 2.76 2.96b 0.500.600.75b1 1.10 1.20 1.35c 0.500.600.70D 15.6715.8716.07D1 8.999.199.39e 2.54E 9.9110.1110.31L 9.459.7510.05L1 15.8016.0016.20P 2.98 3.18 3.38Q 3.10 3.30 3.50All Dimensions in mmTO-220ABDim Min Typ Max A 3.56- 4.82A1 0.51- 1.39A2 2.04- 2.92b 0.390.81 1.01b2 1.15 1.24 1.77c 0.356- 0.61D 14.22- 16.51D1 8.39- 9.01e 2.54 e1 5.08 E 9.66- 10.66H1 5.85- 6.85L 12.70- 14.73L1 - - 6.35P 3.54- 4.08Q 2.54- 3.42All Dimensions in mmITO220AB Alternate (Note 6) Dim Min Max A 4.36 4.77 A1 2.54 3.10 A2 2.54 2.80 b 0.55 0.75 b1 1.20 1.50 c 0.38 0.68 D 14.5015.50 D1 8.38 8.89 e 2.41 2.67 E 9.72 10.27 L 9.87 10.67 L1 15.8 17.00 P 3.08 3.39 Q 2.60 3.00 All Dimensions in mmPIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2011, Diodes Incorporated分销商库存信息:DIODESSBR20A100CTFP SBR20A100CT。

SBR10U200CTFP;SBR10U200CTB;SBR10U200CT;中文规格书,Datasheet资料

10A SBRSUPER BARRIER RECTIFIERFeatures• Ultra Low Forward Voltage Drop • Excellent High Temperature Stability• Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability• Lead-Free Finish; RoHS Compliant (Notes 1 & 2) •Also Available in Green Molding Compound • Halogen and Antimony Free. “Green” Device (Note 3)Mechanical Data•Case: TO-220AB, ITO-220AB, D 2Pak• Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0• Terminals: Matte Tin Finish annealed over Copper leadframe.Solderable per MIL-STD-202, Method 208 • Weight: TO-220AB – 1.85 grams (approximate)ITO-220AB – 1.65 grams (approximate)D 2Pak – 2.1 grams (approximate)Ordering Information (Notes 4 and 5)Part Number CasePackagingPbSBR10U200CT TO-220AB 50 pieces/tubeGreenSBR10U200CT-G TO-220AB 50pieces/tubePbSBR10U200CTFP ITO-220AB 50 pieces/tube GreenSBR10U200CTFP-G ITO-220AB 50 pieces/tubePbSBR10U200CTFP-JT ITO-220AB (Alternate)50 pieces/tube PbSBR10U200CTB D 2Pak50 pieces/tube GreenSBR10U200CTB-G D 2Pak 50 pieces/tube PbSBR10U200CTB-13 D 2Pak 800/Tape & Reel GreenSBR10U200CTB-13-GD 2Pak800/Tape & ReelNotes:1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.2. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. For Green Molding Compound version part numbers, add "-G" suffix to part number above. Examples: SBR10U200CTB-G.5. For packaging details, go to our website at .Marking InformationPackage Pin-Out ConfigurationTO-220AB Top View ITO-220AB Top View TO-220AB Bottom View ITO-220AB Bottom ViewSBR10U200CTFP = Product Type Marking Code AB = Foundry and Assembly Code YYWW = Date Code MarkingYY = Last two digits of year (ex: 06 = 2006) WW = Week (01 - 53)SBR10U200CT = Product Type Marking Code AB = Foundry and Assembly Code YYWW = Date Code MarkingYY = Last two digits of year (ex: 06 = 2006) WW = Week (01 - 53)SBR10U200CTB = Product Type Marking Code AB = Foundry and Assembly Code YYWW = Date Code MarkingYY = Last two digits of year (ex: 06 = 2006) WW = Week (01 - 53)D 2Pak Top ViewMaximum Ratings (Per Leg) @T A = 25°C unless otherwise specifiedSingle phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.Characteristic Symbol Value UnitPeak Repetitive Reverse VoltageWorking Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V RM 200 V Average Rectified Output Current (Per Leg) (Total) I O510 A Non-Repetitive Peak Forward Surge Current 8.3msSingle Half Sine-Wave Superimposed on Rated LoadI FSM150 A Peak Repetitive Reverse Surge Current (2μS-1Khz) I RRM3 A Isolation Voltage (ITO-220AB Only)From terminal to heatsink t = 3 sec. V AC2000 VThermal Characteristics (Per Leg)Characteristic Symbol Value UnitTypical Thermal Resistance Package = TO-220AB & D 2Pak Package = ITO-220ABR θJC2 4 ºC/W Operating and Storage Temperature Range T J , T STG-65 to +175 ºCElectrical Characteristics (Per Leg) @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionForward Voltage Drop V F- -0.60 - 0.82 0.65 0.88 V I F = 5A, T J = 25ºC I F = 5A, T J = 125ºC I F = 10A, T J = 25ºCLeakage Current (Note 6) I R- - 0.225 mA V R = 200V, T J = 25ºC V R = 200V, T J = 125ºCReverse Recovery Time t rr - 24 30 ns I F = 0.5A, I R = 1A, I RR = 0.25A- 20 25I F = 1A, V R = 30V,di/dt = 100A/μs, T J = 25ºCNotes: 6. Short duration pulse test used to minimize self-heating effect. 7. Using heatsink (by Black Aluminum 45mm * 20mm * 12mm)Fig. 1 Forward Power Dissipation I , AVERAGE FORWARD CURRENT (A)F(AV)P , P O W E R D I S S I P A T I O N (W )D10100I , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )F V , INSTANTANEOUS FORWARD VOLTAGE (mV)Fig. 2 Typical Forward CharacteristicsF Fig. 3 Typical Reverse CharacteristicsV , INSTANTANEOUS REVERSE VOLTAGE (V)R I , I N S T A N T A N E O U S R E V E R S E C U R R E N T (µA )R Fig. 4 Forward Current Derating CurveT , AMBIENT TEMPERATURE (C)A °I , A V E R A G E F O R W A R D C U R R E N T (A )F (A V )Fig. 5 Operating Temperature DeratingV , DC REVERSE VOLTAGE (V)R T ,D E R A T E D A M B I E N T T E M P E R A T U R E (C )A °Package Outline DimensionsSuggested Pad LayoutITO-220ABDim Min Typ Max A 4.50 4.70 4.90A1 3.04 3.24 3.44A2 2.56 2.76 2.96b 0.500.600.75b1 1.10 1.20 1.35c 0.500.600.70D 15.6715.8716.07D1 8.999.199.39e 2.54E 9.9110.1110.31L 9.459.7510.05L1 15.8016.0016.20P 2.98 3.18 3.38Q 3.10 3.30 3.50All Dimensions in mmTO-220ABDim Min Typ Max A 3.56- 4.82A1 0.51- 1.39A2 2.04- 2.92b 0.390.81 1.01b2 1.15 1.24 1.77c 0.356- 0.61D 14.22- 16.51D1 8.39- 9.01e 2.54 e1 5.08 E 9.66- 10.66H1 5.85- 6.85L 12.70- 14.73L1 - - 6.35P 3.54- 4.08Q 2.54- 3.42All Dimensions in mmITO-220AB AlternateDim Min MaxA 4.36 4.77 A1 2.54 3.1 A2 2.54 2.8 b 0.55 0.75 b1 1.2 1.5 c 0.38 0.68 D 14.5 15.5 D1 8.38 8.89 E 9.72 10.27 e 2.41 2.67 L 9.87 10.67 L1 15.8 17 ØP 3.08 3.39 Q 2.6 3.0 All Dimensions in mmD 2PAKDim Min Max A 4.07 4.82 b 0.51 0.99 b1 1.15 1.77 c 0.356 0.58 c1 1.143 1.65 D 8.39 9.65 D1 6.55 ⎯E 9.66 10.66 E1 6.23 ⎯ e 2.54 Typ H 14.61 15.87 L 1.78 2.79 L1 ⎯ 1.67 L2 ⎯ 1.77 a 0° 8° All Dimensions in mmDimensionsValue (in mm)Z 16.9 X1 1.1 X2 10.8 Y1 3.5 Y2 11.4 C 9.5 E1 2.5X2CZX1Y1E1Y2IMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2012, Diodes Incorporated分销商库存信息:DIODESSBR10U200CTFP SBR10U200CTB SBR10U200CT。

20TT100资料

Document Number: 94531For technical questions, contact: diodes-tech@High PerformanceSchottky Generation 5.0, 20 A20TT100Vishay High Power ProductsFEATURES•175 °C high performance Schottky diode •Very low forward voltage drop •Extremely low reverse leakage•Optimized V F vs. I R trade off for high efficiency•Increased ruggedness for reverse avalanche capability •RBSOA available•Negligible switching losses •Submicron trench technology•Full lead (Pb)-free and RoHS compliant devices •Designed and qualified for industrial levelAPPLICATIONS•High efficiency SMPS •Automotive•High frequency switching •Output rectification•Reverse battery protection •Freewheeling •Dc-to-dc systems•Increased power density systemsPRODUCT SUMMARYI F(AV)20 A V R100 VMAJOR RATINGS AND CHARACTERISTICSSYMBOL CHARACTERISTICSVALUES UNITS I F(AV)Rectangular waveform20A V RRM 100V V F 20 Apk, T J = 125 °C (typical)0.63T JRange- 55 to 175°CVOLTAGE RATINGSPARAMETER SYMBOL TEST CONDITIONS 20TT100UNITS Maximum DC reverse voltageV RT J = 25 °C100VABSOLUTE MAXIMUM RATINGSPARAMETER SYMBOL TEST CONDITIONS VALUESUNITSMaximum average forward current I F(AV)50 % duty cycle at T C = 160 °C, rectangular waveform 20A Maximum peak one cyclenon-repetitive surge current I FSM 5 µs sine or 3 µs rect. pulse Following any rated loadcondition and with rated V RRM applied90010 ms sine or 6 ms rect. pulse 300Non-repetitive avalanche energy E AS T J = 25 °C, I AS = 1.5 A, L = 60 mH67.5mJ Repetitive avalanche currentI ARLimited by frequency of operation and time pulse duration sothat T J < T J max. I AS at T J maximum as a function of time pulseSee fig. 8I AS atT J maximumA 元器件交易网For technical questions, contact: diodes-tech@Document Number: 9453120TT100Vishay High Power ProductsHigh PerformanceSchottky Generation 5.0, 20 ANote(1)Pulse width < 300 µs, duty cycle < 2 %ELECTRICAL SPECIFICATIONSPARAMETER SYMBOLTEST CONDITIONS TYP. MAX. UNITSForward voltage dropV FM (1)20 AT J = 25 °C -0.8V40 A -0.9520 A T J = 125 °C -0.6740 A-0.8Reverse leakage current I RM (1)T J = 25 °C V R = Rated V R-150µA T J = 125 °C-6mA Junction capacitance C T V R = 5 V DC (test signal range 100 kHz to 1 MHz) 25 °C 850-pF Series inductanceL S Measured lead to lead 5 mm from package body 8.0-nH Maximum voltage rate of change dV/dtRated V R-10 000V/µs THERMAL - MECHANICAL SPECIFICATIONSPARAMETER SYMBOL TEST CONDITIONSVALUES UNITS Maximum junction andstorage temperature range T J , T Stg- 55 to 175°CMaximum thermal resistance,junction to caseR thJC DC operation 2°C/WTypical thermal resistance,case to heatsink R thCSMounting surface, smooth and greased0.5Approximate weight 2g 0.07oz.Mounting torque minimum 6 (5)kgf · cm (lbf · in)maximum12 (10)Case style TO-220ACMarking device20TT100元器件交易网Document Number: 94531For technical questions, contact: diodes-tech@20TT100High Performance Schottky Generation 5.0, 20 AVishay High Power ProductsFig. 1 - Maximum Forward Voltage Drop CharacteristicsFig. 2 - Typical Values of Reverse Current vs.Reverse VoltageFig. 3 - Typical Junction Capacitance vs. Reverse VoltageFig. 4 - Maximum Thermal Impedance Z thJC Characteristics元器件交易网 For technical questions, contact: diodes-tech@Document Number: 9453120TT100Vishay High Power ProductsHigh PerformanceSchottky Generation 5.0, 20 AFig. 5 - Maximum Allowable Case Temperature vs.Average Forward CurrentFig. 6 - Forward Power Loss CharacteristicsFig. 7 - Maximum Non-Repetitive Surge CurrentNote(1)Formula used: T C = T J - (Pd + Pd REV ) x R thJC ;Pd = Forward power loss = I F(AV) x V FM at (I F(AV)/D) (see fig. 6);Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = 80 % rated V R元器件交易网Document Number: 94531For technical questions, contact: diodes-tech@20TT100High Performance Schottky Generation 5.0, 20 AVishay High Power ProductsFig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)元器件交易网元器件交易网Vishay High Power Products High PerformanceSchottky Generation 5.0, 20 AORDERING INFORMATION TABLELINKS TO RELATED DOCUMENTSDimensions /doc?95221Part marking information /doc?95224SPICE model /doc?95228 For technical questions, contact: diodes-tech@ Document Number: 94531Legal Disclaimer NoticeVishayDocument Number: NoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.International Rectifier ®, IR ®, the IR logo, HEXFET ®, HEXSense ®, HEXDIP ®, DOL ®, INTERO ®, and POWIRTRAIN ®are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.元器件交易网。

S10040200P资料

SYMBOL
Vi Vov Tstg Tmb
PARAMETER
RF input voltage (single tone) DC supply over-voltage (5 minutes) storage temperature operating mounting base temperature
S10040200P
GaAs Push Pull Hybrid
40 – 1000MHz 20dB min. Gain @ 1000MHz
260mA max. @ 24VDC
MIN.
- 40 - 30
MAX.
75 30 + 100 + 100
UNIT
dBmV V °C °C
CHARACTERISTICS
19.5 20.0 0.5
-
TYP.
20.0
20.0
18.0
15.0
20.0
18.0
15.0
-
4.0
255.0
MAX.
20.5 21.5 1.5 ±0.4
4.5 260.0
UNIT
dB dB dB dB
dB dB dB dB dB dB dB mA
Notes: 1) The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
I U
123 5 789 C
E
M
R
J
S
P
K
O
T
øG
Q
N

TPMS方案介绍

+/- 7 kPa (Note 1: @ 200kPa to 450kPa/ -30c to 100c） +/- 10 kPa (Note 2: @ 100kPa to 450kPa/ -40c to 120c） +/- 20 kPa (Note 3: @ all recommended temp and pressure）
合格的汽车应用每个驱动程序都有使能开关高± 4 A电流驱动能力独特的双极型和CMOS驱动输出级
提供最大的电流阈值 TTL / CMOS兼容输入电压的电源独立 4 - V至15 V电源电压双输出可以并联以满足更高的驱动电流在-40 ° C至125 ° C额定
主要应用
开关电源直流/直流转换器电机控制器线路驱动器 D类开关放大器
功能板：
TPMS DEMO开发套件
目标板：提供测试软件
TPMS 方案介绍
市场部：范顺旭（Andy） 2010.5.10
TPMS 整体框图构架
TMS3705
TPIC82000的基本资源：
基于8051的核 Code Memory : 16KB RAM: 128Byte Ext RAM: 128Byte EEPROM: 7bit x 40
集成模块功能：
Pressure Sensor（压力传感器） G Sensor（加速度传感器） Temp. Sensor （温度传感器） Voltage Sensor（电压检测） LF Receiver （低频接收） RF Tx Contorl （高频发射控制）
TPIC82000 基本参数
TPIC82000是一颗低频唤醒，高频传输数据的芯片，集成度非常高
低功耗Stand by mode：0.2 uA (typ)

MPSA20中文资料

θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.4
1.6 0.8
*APPLIES for IC/IB ≤ hFE/2 25°C to 125°C
0
*qVC for VCE(sat) – 55°C to 25°C
– 0.8 25°C to 125°C – 1.6
qVB for VBE
BANDWIDTH = 1.0 Hz
2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k
Figure 5. Narrow Band, 100 Hz
Figure 6. Narrow Band, 1.0 kHz
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit °C/W °C/W
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
IC, COLLECTOR CURRENT (µA)
Figure 7. Wideband Motorola Small–Signal Transistors, FETs and Diodes Device Data 3
元器件交易网 MPSA20
元器件交易网
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSA20/D

Abracon AMCA系列：多层矿物芯片抗波阻抗器产品说明书

2710MHz 5.2 x 2.1 x 1.0mm
2610~ 2810MHz 2780MHz 5.2 x 2.1 x 1.0mm
2680 ~ 2880MHz
AMCA622R640G-01F40MHz 6.0 x 2.0 x 1.0mm
2540 ~ 2740MHz
AMCA
31
2R450G
S1F
Part Series
Size
Center
Series Code /
Frequency Hazardous Substance
T
Packaging Code
Multilayer Chip Ant
31, 52, 62 72, 81 & 92
2R450G equals 2.450GHz
Multilayer Ceramic Technology The AMCA Series are made from LTCC (Low Temperature Co-fired Ceramic). This technology is the same used in multilayer inductors and capacitors, allowing the devices to be small but especially low profile. The metallization is all within the devices, so only the pads and can be seen at the ends of the package.
In this WiFi or ISM example; the 2.45GHz antenna provides the transmission and reception of signals. In many handheld solution the choice of antenna will be a ceramic chip type. Abracon also provides other BOM elements for example SAW, Balun, BPF, as well as Crystals or Resonators.