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ASTM E11-04.3423-1

Designation:E11–04Standard Speciﬁcation forWire Cloth and Sieves for Testing Purposes1This standard is issued under theﬁxed designation E11;the number immediately following the designation indicates the year of original adoption or,in the case of revision,the year of last revision.A number in parentheses indicates the year of last reapproval.A superscript epsilon(e)indicates an editorial change since the last revision or reapproval.This standard has been approved for use by agencies of the Department of Defense.1.Scope1.1This speciﬁcation covers the requirements for design and construction of testing sieves using a medium of woven wire cloth mounted in a frame for use in testing for the classiﬁcation of materials according to designated particle size (See Note1and Note2),and wire cloth,meeting the speciﬁcations of Table1,to be designated test grade wire cloth. All subsequent references to wire cloth shall mean test grade wire cloth.Methods for checking testing sieves and wire cloth for conformance to this speciﬁcation are included in the annex. N OTE1—Complete instructions and procedures on the use and calibra-tion of testing sieves are contained in Manual32.2Note that sieve analysis results from two testing sieves of the same sieve designation may not be the same because of the variances in sieve opening permitted by this speciﬁcation.To minimize the differences in sieve analysis results,the use of testing sieves matched on a performance basis is suggested.Manual322 also contains a list of all published ASTM standards on sieve analysis procedures for speciﬁc materials or industries.This list may be referenced to obtain statements of precision and bias for sieve analysis of speciﬁc materials.N OTE2—For other types of sieves,see Speciﬁcation E323and Speciﬁcation E161.1.2The values stated in SI units shall be considered standard for the dimensions of the wire cloth openings and the diameter of the wires used in the wire cloth.The values stated in inch-pound units shall be considered standard with regard to the sieve frames.1.3The following precautionary statement refers only to the test method portion,Annex A1,of this speciﬁcation:This standard does not purport to address all of the safety concerns, if any,associated with its use.It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limita-tions prior to use.2.Referenced Documents2.1ASTM Standards:3C430Test Method for Fineness of Hydraulic Cement by the45-µm No.325SieveE161Speciﬁcation for Precision Electroformed SievesE323Speciﬁcation for Perforated-Plate Sieves for Testing PurposesE437Speciﬁcations for Industrial Wire Cloth and Screens (Square Opening Series)2.2Federal Standard:Fed.Std.No.123Marking for Shipment(Civil Agencies)4 2.3Military Standard:MIL-STD-129Marking for Shipment and Storage43.Ordering Information3.1Orders for items under this speciﬁcation include the following information as necessary:3.1.1Name of material(U.S.A.Standard Testing Sieves or U.S.A.Standard sieve cloth),3.1.2ASTM designation and year of issue(ASTM E11–01),3.1.3Quantity of each item,3.1.4Standard sieve designation(see Table1,Column1), 3.1.5Alternative sieve designation if needed(see Table1, Column2),3.1.6For testing sieves in standard circular frames:3.1.6.1Nominal sieve frame diameter(see5.2and5.3), 3.1.6.2Nominal sieve frame height(see Table2),3.1.7For sieve cloth not in frames or in nonstandard frames: 3.1.7.1Lateral dimensions of sieve cloth,3.1.7.2Description of nonstandard frame,3.1.8For ernment purchases,if supplementary requirements apply,3.1.9Compatible sieve pans and covers,and1This speciﬁcation is under the jurisdiction of ASTM Committee E29on Particleand Spray Characterization and is the direct responsibility of Subcommittee E29.01 on Sieves,Sieving Methods,and Screening Media.Current edition approved May1,2004.Published May2004.Originally approved st previous edition approved in2001as E11–01.2Manual on Testing Sieving Methods,ASTM Manual32,ISBN0-8-31-2495-3. Available from ASTM Headquarters.3For referenced ASTM standards,visit the ASTM website,,or contact ASTM Customer Service at service@.For Annual Book of ASTM Standards volume information,refer to the standard’s Document Summary page on the ASTM website.4Available from Standardization Documents Order Desk,Bldg.4Section D,700 Robbins Ave.,Philadelphia,PA19111-5094,Attn:NPODS.Copyright©ASTM International,100Barr Harbor Drive,PO Box C700,West Conshohocken,PA19428-2959,United States.TABLE 1Nominal Dimensions,Permissible Variations for Wire Cloth of Standard Test Sieves (U.S.A.)Standard SeriesSieve Designation Nominal Sieve Opening,in.A Permissible Variation of Average Opening from the Standard Sieve Designation Opening Dimension Exceeded By Not More Than 5%of theOpenings Maximum IndividualOpening Nominal Wire Diameter,mm B Standard CAlternative (1)(2)(3)(4)(5)(6)(7)125mm 5in.563.70mm 130.0mm 130.9mm 8.00106mm 4.24in. 4.2463.20mm 110.2mm 111.1mm 6.30100mm D 4in.D 463.00mm 104.0mm 104.8mm 6.3090mm 31⁄2in. 3.562.70mm 93.6mm 94.4mm 6.3075mm 3in.362.20mm 78.1mm 78.7mm 6.3063mm 21⁄2in. 2.561.90mm 65.6mm 66.2mm 5.6053mm 2.12in. 2.1261.60mm 55.2mm 55.7mm 5.0050mm D 2in.D 261.50mm 52.1mm 52.6mm 5.0045mm 13⁄4in. 1.7561.40mm 46.9mm 47.4mm 4.5037.5mm 11⁄2in. 1.561.10mm 39.1mm 39.5mm 4.5031.5mm 11⁄4in. 1.2561.00mm 32.9mm 33.2mm 4.0026.5mm 1.06in. 1.066.800mm 27.7mm 28.0mm 3.5525.0mm D 1.00in.D 16.800mm 26.1mm 26.4mm 3.5522.4mm 7⁄8in.0.8756.700mm 23.4mm 23.7mm 3.5519.0mm 3⁄4in.0.7506.600mm 19.9mm 20.1mm 3.1516.0mm 5⁄8in.0.6256.500mm 16.7mm 17.0mm 3.1513.2mm 0.530in.0.5306.410mm 13.83mm 14.05mm 2.8012.5mm D 1⁄2in.D 0.5006.390mm 13.10mm 13.31mm 2.5011.2mm 7⁄16in.0.4386.350mm 11.75mm 11.94mm 2.509.5mm 3⁄8in.0.3756.300mm 9.97mm 10.16mm 2.248.0mm 5⁄16in.0.3126.250mm 8.41mm 8.58mm 2.006.7mm 0.265in.0.2656.210mm 7.05mm 7.20mm 1.806.3mm D 1⁄4in.D0.2506.200mm 6.64mm 6.78mm 1.805.6mm No.31⁄2E 0.2236.180mm 5.90mm 6.04mm 1.604.75mm No.40.1876.150mm 5.02mm 5.14mm 1.604.00mm No.50.1576.130mm 4.23mm 4.35mm 1.403.35mm No.60.1326.110mm 3.55mm 3.66mm 1.252.80mm No.70.1106.095mm 2.975mm 3.070mm 1.122.36mm No.80.09376.080mm 2.515mm 2.600mm 1.002.00mm No.100.07876.070mm 2.135mm 2.215mm 0.9001.7mm No.120.06616.060mm 1.820mm 1.890mm 0.8001.4mm No.140.05556.050mm 1.505mm 1.565mm 0.7101.18mm No.160.04696.045mm 1.270mm 1.330mm 0.6301.00mm No.180.03946.040mm 1.080mm 1.135mm 0.560850µm F No.200.0331635µm 925µm 970µm 0.500710µm No.250.0278630µm 775µm 815µm 0.450600µm No.300.0234625µm 660µm 695µm 0.400500µm No.350.0197620µm 550µm 585µm 0.315425µm No.400.0165619µm 471µm 502µm 0.280355µm No.450.0139616µm 396µm 426µm 0.224300µm No.500.0117614µm 337µm 363µm 0.200250µm No.600.0098612µm 283µm 306µm 0.160212µm No.700.0083610µm 242µm 263µm 0.140180µm No.800.007069µm 207µm 227µm 0.125150µm No.1000.005968µm 174µm 192µm 0.100125µm No.1200.004967µm 147µm 163µm 0.090106µm No.1400.004166µm 126µm 141µm 0.07190µm No.1700.003565µm 108µm 122µm 0.06375µm No.2000.002965µm 91µm 103µm 0.05063µm No.2300.002564µm 77µm 89µm 0.04553µm No.2700.002164µm 66µm 76µm 0.03645µm No.3250.001763µm 57µm 66µm 0.03238µm No.4000.001563µm 48µm 57µm 0.03032µm No.4500.001263µm 42µm 50µm 0.02825µm D No.5000.001063µm 34µm 41µm 0.02520µm DNo.6350.000863µm29µm35µm0.020A Only approximately equivalent to the metric values in Column 1.BThe average diameter of the wires in the x and y direction,measured separately,of any wire cloth shall not deviate from the nominal values by more than 615%.CThese standard designations correspond to the values for test sieve openings recommended by the International Standards Organization,Geneva,Switzerland,except where noted.DThese sieves are not in the standard series but they have been included because they are in common usage.EThese numbers (31⁄2to 635)are the approximate number of openings per linear in.but it is preferred that the sieve be identiﬁed by the standard designation in millimetres or micrometres.F1000µm—1mm.3.1.10Special requirements (speciﬁc type of metal for sieve cloth and frames,matched sieves,for example).4.Sieve Cloth Requirements4.1Wire cloth used in U.S.A.standard testing sieves meet-ing the speciﬁcations shown in Table 1shall be designated “test grade”.Test grade sieve cloth shall be woven from stainless steel,brass,bronze,or other suitable wire with a plain weave,except that cloth with openings of 63µm (No.230)and ﬁner may be woven with a twill weave.For deﬁnitions of “plain”and “twill”weave,refer to Speciﬁcation E 437.The wire shall not be coated or plated.4.2The openings of the sieve cloth of successive sieves progress from a base of 1mm in the ratio of approximately 4=2:1.4.3All measurements of openings and wire diameters shall be made along the midpoints of the opening as shown in Fig.1.4.4Sieve cloth shall conform to the dimensional require-ments of Table 1.The average opening (distance between parallel wires measured at the center of the opening),in the x (horizontal)and y (vertical)directions measured separately,shall conform to the values in Column 1,within the permissible variation in average opening size shown in Column 4.Not more than 5%of the openings shall exceed the value shown in Column5.The maximum individual opening size shall not exceed the value shown in Column6.4.4.1The average diameter of the x (horizontal)and y (vertical)wires,measured separately,shall conform to the diameter in Column 7within the tolerances in Footnote A of Table 1.4.5Wires shall be crimped in such a manner that they will be rigid when in use.4.6There shall be no punctures or obvious defects in the cloth.5.Test Sieve Frames5.1General Requirements —Frames for wire cloth sieves shall be constructed in such a manner as to be rigid.The wire cloth shall be mounted on the frame without distortion,looseness,or waviness.To prevent the material being sieved from catching in the joint between the wire cloth and the frame,the joint shall be ﬁlled smoothly or constructed so that the material will not be trapped.5.2Standard Frames —Sieve frames shall be circular with nominal diameters of 3,6,8,10,or 12in.(76,152,203,254,or 305mm)as may be speciﬁed.The dimensions shall conform to the requirements in Table 2.Frames shall be made from noncorrosive material such as brass or stainless steel and be of seamless construction.5.2.1The bottom of the frame shall be constructed so as to provide an easy sliding ﬁt with any sieve frame of the same nominal diameter conforming to the speciﬁed dimensions.5.2.2The joint or ﬁllet at the connection of the sieve cloth to the frame will provide a minimum clear sieving surface with a diameter equal to the nominal diameter less 0.5in.(13mm).N OTE 3—Attention is called to Test Method C 430,which contains requirements for 2in.(51mm)diameter sieves used in the mineral industry,especially the cement group.5.3Nonstandard Frames —Other sieve frames may be ei-ther square,rectangular,or circular.The frame may have the sieve cloth permanently installed,or may be designed to permit replacement.The provisions of 5.1apply.N OTE 4—While there are no requirements for nesting of nonstandard sieve frames,care should be applied in use to prevent loss of material during analysis.5.4Pans and Covers —Pans and covers for use with sieves shall be made so as to nest with the sieves.Pans with extended rims (“stacking skirts”)shall be furnished when speciﬁed.The pans and covers shall conform to the dimensions in Table 2.6.Product Marking6.1Each test sieve shall bear a label marked with the following information:6.1.1U.S.A.standard testing sieve,6.1.2This designation (ASTM E 11),6.1.3Standard sieve designation (from Table 1,Column 1),6.1.4Name of manufacturer or distributor,and6.1.5Alternative sieve designation (from Table 1,Column 2)(optional).6.1.6Each test sieve shall bear a unique serial number permanently engraved or etched onto the sieve frame,skirt or nameplate.TABLE 2Dimensions of Standard FramesNominal Diameter Mean Diameter,in.(mm)Typical FrameAin.Inside at Top B Outside on Skirt Nominal Height Cin.(mm)3 3.000+0.030/−0.000 3.000+0.000/−0.03011⁄4(32)FH D (76+0.76/−0.00)(76+0.00/−0.76)5⁄8(16)HH 6 6.000+0.030/−0.000 6.000+0.000/−0.03013⁄4(45)FH (152+0.76/−0.00)(152+0.00/−0.76)1(25)HH 88.000+0.030/−0.000(203+0.76/−0.008.000+0.000/−0.030)(203+0.00/−0.76)2(50)FH 1(25)HH 1010.000+0.030/−0.00010.000+0.000/−0.0303(76)FH (254+0.76/−0.00)(254+0.00/−0.76)11⁄2(38)HH 1212.000+0.030/−0.00012.000+0.000/−0.03031⁄4(83)FH (305+0.76/−0.00)(305+0.00/−0.76)2(50)IH 15⁄8(41)HHA Other frame heights are not precluded.BMeasured 0.2in.(5mm)below the top of the frame.CDistance from the top of the frame to the sieve cloth surface.DFH =full height;HH =half height;IH =intermediateheight.FIG.1Proper Dimensioning of Wire ClothMesh7.Keywords7.1opening;particle size;sieve;sieve analysis;sieve cloth;sieve designation;test grade wire cloth;test sieveSUPPLEMENTARY REQUIREMENTSThe following supplementary requirements shall apply only when speciﬁed by the purchaser in thecontract or order.S1.Responsibility for InspectionS1.1Unless otherwise speciﬁed in the contract or purchase order,the producer is responsible for the performance of all inspection and test requirements speciﬁed herein.Except as otherwise speciﬁed in the contract or order,the producer may use his own or any other suitable facilities for the performance of the inspection and test requirements speciﬁed herein,unless disapproved by the purchaser.The purchaser shall have the right to perform any of the inspections and tests set forth in this speciﬁcation where such inspections are deemed necessary to ensure that materials meet the speciﬁernment ProcurementS2.1Unless otherwise speciﬁed in the contract,the materi-als shall be packaged in accordance with the suppliers’standard practice that will be acceptable to the carrier at lowest rates.Containers and packing shall comply with the Uniform Freight Classiﬁcation rules or National Motor Freight Classi-ﬁcation rules.Marking for shipment of such materials shall be in accordance with Fed.Std.No.123for civil agencies,and MIL-STD-129for military agencies.ANNEX(Mandatory Information)A1.TEST METHODS FOR CHECKING WIRE CLOTH AND TESTING SIEVES TO DETERMINE WHETHER THEY CONFORM TO SPECIFICATIONA1.1Every opening in the metal wire cloth in a test sieve shall be eligible for inspection for compliance with the requirements listed in Table1.A1.1.1When a sieve has30openings or less,measure all openings.In other cases the examination shall proceed in stages from a survey of general condition,to a methodical scrutiny of individual openings,andﬁnally to measurement of opening size for compliance with the tolerances.A1.1.2Measure opening size,as described in Test Methods Two,Three,and Four,on equipment with a precision of at least 2.5µm or10%of the value in Column4for the speciﬁc mesh designation,whichever is greater.A1.2Test Method One—Examination of General Condition of the Wire Cloth—For this purpose,view the sieve cloth against a uniformly illuminated background.If obvious devia-tions,for example,weaving defects,creases,wrinkles,foreign matter in the cloth,are found,the wire cloth is unacceptable. A1.3Test Method Two—Examination for Maximum Indi-vidual Opening—The observer shall carefully and methodi-cally examine the appearance of all the openings,in order to detect oversize openings.Openings whose width deviates by about10%of the average value are apparent to the unaided eye of a skilled observer.By this test method,known as the “handicap method”,it is probable that all oversize openings exceeding the average value by about10%or more will be detected.At the same time it is easily possible to detect sequences of large openings,and local irregularities in the weaving,appearing as distortions in the openings.If an opening is found to be larger than that permissible in accor-dance with Column6of Table1,the wire cloth is unacceptable. A1.4Test Method Three—Determination of the Size Dis-tribution of Wire Cloth Openings—To establish the size distri-bution of sieve openings,determine the frequency of opening size measurements using the following procedures:A1.4.1For samples(testing sieves or wire cloth)with30or less openings,measure all full openings.For samples with over 30openings,measure a minimum of30full openings.A1.4.2Select openings in a line or lines diagonal to the direction of the wires according to Fig.A1.1,and measure ten adjacent openings along each line.When greater numbers of openings are available,choose theﬁelds in such a manner that none of the openings being measured overlap.A1.4.3Measurement of the Average Opening Size Measure the average opening as the distance between parallel wires(measured at the center of the opening—see Fig.1)in both directions,being sure to keep the x and y measure-ments separate.Once the opening data is tabulated,check the data versus the prescribed limits in Table1.A1.5Test Method Four—Measurement of the Average Wire Diameter—Obtain the average diameter of the wiresbymeasuring 30different wires selected at random in each direction.Once the opening data is tabulated,check the data versus the prescribed limits in Table 1.ASTM International takes no position respecting the validity of any patent rights asserted in connection with any item mentioned in this ers of this standard are expressly advised that determination of the validity of any such patent rights,and the risk of infringement of such rights,are entirely their own responsibility.This standard is subject to revision at any time by the responsible technical committee and must be reviewed every ﬁve years and if not revised,either reapproved or withdrawn.Your comments are invited either for revision of this standard or for additional standards and should be addressed to ASTM International Headquarters.Your comments will receive careful consideration at a meeting of the responsible technical committee,which you may attend.If you feel that your comments have not received a fair hearing you should make your views known to the ASTM Committee on Standards,at the address shown below.This standard is copyrighted by ASTM International,100Barr Harbor Drive,PO Box C700,West Conshohocken,PA 19428-2959,United States.Individual reprints (single or multiple copies)of this standard may be obtained by contacting ASTM at the above address or at 610-832-9585(phone),610-832-9555(fax),or service@ (e-mail);or through the ASTM website().FIG.A1.1Orientation of Openings to be Measured in EachField。

17431资料

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself.Renesas Technology Home Page: Renesas Technology Corp.Customer Support Dept.April 1, 2003CautionsKeep safety first in your circuit designs!1. Renesas Technology Corporation puts the maximum effort into making semiconductor products betterand more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.Notes regarding these materials1. These materials are intended as a reference to assist our customers in the selection of the RenesasTechnology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party.2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of anythird-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.3. All information contained in these materials, including product data, diagrams, charts, programs andalgorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein.The information described here may contain technical inaccuracies or typographical errors.Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page().4. When using any or all of the information contained in these materials, including product data, diagrams,charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from theinformation contained herein.5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a deviceor system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce inwhole or in part these materials.7. If these products or technologies are subject to the Japanese export control restrictions, they must beexported under a license from the Japanese government and cannot be imported into a country other than the approved destination.Any diversion or reexport contrary to the export control laws and regulations of Japan and/or thecountry of destination is prohibited.8. Please contact Renesas Technology Corporation for further details on these materials or the productscontained therein.HA17431 SeriesShunt RegulatorADE-204-049A (Z)Rev.1Sep. 2002 DescriptionThe HA17431 series is temperature-compensated variable shunt regulators. The main application of these products is in voltage regulators that provide a variable output voltage. The on-chip high-precisionmax of 16 volts. reference voltage source can provide ±1% accuracy in the V versions, which have a VKAThe HA17431VLP, which is provided in the MPAK-5 package, is designed for use in switching mode power supplies. It provides a built-in photocoupler bypass resistor for the PS pin, and an error amplifier can be easily constructed on the supply side.Features•The V versions provide 2.500 V ±1% at Ta = 25°C•The HA17431VLP includes a photocoupler bypass resistor (2 kΩ)•The reference voltage has a low temperature coefficient•The MPAK-5(5-pin), MPAK(3-pin) and UPAK miniature packages are optimal for use on high mounting density circuit boards•Car use is providedBlock DiagramHA17431 SeriesRev.1, Sep. 2002, page 2 of 24Application Circuit ExampleOrdering InformationVersionItemV VersionA Version Normal VersionPackage Operating Temperature Range Accuracy ±1% ±2.2% ±4% Max 2.525 V 2.550 V 2.595 V Typ 2.500 V 2.495 V 2.495 V Reference voltage (at 25°C)Min2.475 V 2.440 V 2.395 V Cathode voltage 16 V max 40 V max 40 V max Cathode current 50 mA max150 mA max150 mA maxHA17431VPJHA17431PNAJTO-92HA17431PAJ HA17431PJ TO-92MOD HA17431FPAJ Car useHA17431FPJFP-8D –40 to +85°CHA17431 SeriesRev.1, Sep. 2002, page 3 of 24Ordering Information (cont.)VersionItemV VersionA VersionNormal VersionPackage Operating Temperature Range HA17431VLTP HA17432VLTP MPAKHA17431VLP MPAK-5 HA17431VP HA17431PNA TO-92 HA17431VUP HA17431UPA HA17432VUPHA17432UPAUPAK HA17431PA HA17431P TO-92MOD HA17431FPA Industrial useHA17431FPFP-8D HA17431UA Commercial use HA17432UAUPAK –20 to +85°CPin ArrangementHA17431 SeriesRev.1, Sep. 2002, page 4 of 24Absolute Maximum Ratings(Ta = 25°C)Item Symbol HA17431VLP HA17431VP HA17431VPJ Unit Notes Cathode voltage V KA 16 16 16 V 1 PS term. voltage V PS V KA to 16 — — V 1,2,3Continuous cathode current I K –50 to +50 –50 to +50 –50 to +50 mA Reference input currentIref–0.05 to +10–0.05 to +10–0.05 to +10mAPower dissipation P T 150 *4 500 *5 500 *5 mW 4, 5 Operating temperature range Topr–20 to +85–20 to +85–40 to +85°CStorage temperatureTstg –55 to +150 –55 to +150 –55 to +150 °CItem Symbol HA17431VUP/HA17432VUP HA17431VLTP/HA17432VLTP Unit Notes Cathode voltage V KA 16 16V 1PS term. voltage V PS — — V 1,2,3 Continuouscathode current I K –50 to +50 –50 to +50 mA Reference input currentIref–0.05 to +10–0.05 to +10mAPower dissipation P T 800 *8 150 *4 mW 4, 8 Operating temperature range Topr–20 to +85–20 to +85°CStorage temperatureTstg –55 to +150 –55 to +150 °CItemSymbol HA17431PNA HA17431P/PAHA17431FP/FPA HA17431UA/UPA/ HA17432UA/UPAUnitNotes Cathode voltage V KA 4040 40 40 V 1Continuous cathode current I K –100 to +150 –100 to +150 –100 to +150 –100 to +150 mA Reference input currentIref–0.05 to +10–0.05 to +10–0.05 to +10–0.05 to +10mAPower dissipation P T 500 *5 800 *6 500 *7 800 *8 mW 5,6,7,8 Operating temperature range Topr–20 to +85–20 to +85–20 to +85–20 to +85°CStorage temperatureTstg –55 to +150 –55 to +150 –55 to +125 –55 to +150 °CHA17431 SeriesRev.1, Sep. 2002, page 5 of 24Absolute Maximum Ratings (cont.)(Ta = 25°C)Item Symbol HA17431PNAJ HA17431PJ/PAJ HA17431FPJ/FPAJ Unit Notes Cathode voltage V KA 40 40 40 V 1 Continuous cathode current I K –100 to +150 –100 to +150 –100 to +150 mA Reference input currentIref–0.05 to +10–0.05 to +10–0.05 to +10mAPower dissipation P T 500 *5 800 *6 500 *7 mW 5,6,7 Operating temperature range Topr–40 to +85–40 to +85–40 to +85°CStorage temperatureTstg –55 to +150 –55 to +150 –55 to +125 °CNotes: 1. Voltages are referenced to anode.2. The PS pin is only provided by the HA17431VLP.3. The PS pin voltage must not fall below the cathode voltage. If the PS pin is not used, the PS pinis recommended to be connected with the cathode.4. Ta ≤ 25°C. If Ta > 25°C, derate by 1.2 mW/°C.5. Ta ≤ 25°C. If Ta > 25°C, derate by 4.0 mW/°C.6. Ta ≤ 25°C. If Ta > 25°C, derate by 6.4 mW/°C.7. 50 mm × 50 mm × 1.5mmt glass epoxy board(5% wiring density), Ta ≤ 25°C. If Ta > 25°C,derate by 5 mW/°C.8. 15 mm × 25 mm × 0.7mmt alumina ceramic board,Ta ≤ 25°C. If Ta > 25°C, derate by 6.4mW/°C.HA17431 SeriesRev.1, Sep. 2002, page 6 of 24Electrical CharacteristicsHA17431VLP/VP/VPJ/VUP/VLTP, HA17432VUP/VLTP (Ta = 25°C, I K = 10 mA)Item Symbol Min Typ Max Unit Test Conditions Notes Reference voltage Vref 2.475 2.500 2.525 VV KA = VrefReference voltage temperature deviationVref(dev)— 10 — mV V KA = Vref,Ta = –20°C to +85°C 1Reference voltage temperature coefficient ∆Vref/∆Ta— ±30 — ppm/°C V KA = Vref,0°C to 50°C gradientReference voltage regulation ∆Vref/∆V KA — 2.0 3.7 mV/V V KA = Vref to 16 V Reference input currentIref — 2 6 µA R 1 = 10 k Ω, R 2 = ∞ Reference current temperature deviation Iref(dev)— 0.5 —µA R 1 = 10 k Ω, R 2 = ∞,Ta = –20°C to +85°CMinimum cathode currentImin — 0.4 1.0 mA V KA = Vref2 Off state cathode current Ioff — 0.001 1.0 µA V KA = 16 V, Vref = 0 V Dynamic impedance Z KA — 0.2 0.5 Ω V KA = Vref,I K = 1 mA to 50 mA Bypass resistance R PS 1.6 2.0 2.4 k ΩI PS = 1 mA3 Bypass resistance temperature coefficient ∆R PS /∆Ta— +2000 — ppm/°C I PS = 1 mA,0°C to 50°C gradient3HA17431 SeriesRev.1, Sep. 2002, page 7 of 24Electrical Characteristics (cont.)HA17431PJ/PAJ/FPJ/FPAJ/P/PA/UA/UPA/FP/FPA/PNA/PNAJ, HA17432UA/UPA (Ta = 25°C, I K = 10 mA)Item Symbol Min Typ Max Unit Test Conditions Notes 2.440 2.495 2.550 A Reference voltage Vref 2.395 2.495 2.595 V V KA = Vref Normal —11(30)Ta =–20°C to +85°C 1, 4Reference voltage temperature deviationVref(dev)— 5 (17)mV V KA = VrefTa = 0°C to +70°C1, 4 — 1.4 3.7 V KA = Vref to 10 V Reference voltage regulation ∆Vref/∆V KA — 1 2.2mV/V V KA = 10 V to 40 VReference input currentIref — 3.8 6 µA R 1 = 10 k Ω, R 2 = ∞ Reference current temperature deviation Iref(dev)— 0.5 (2.5) µA R 1 = 10 k Ω, R 2 = ∞,Ta = 0°C to +70°C 4Minimum cathode currentImin — 0.4 1.0 mA V KA = Vref2 Off state cathode current Ioff — 0.001 1.0 µA V KA = 40 V, Vref = 0 V Dynamic impedanceZ KA— 0.2 0.5 ΩV KA = Vref,I K = 1 mA to 100 mANotes: 1. Vref(dev) = Vref(max) – Vref(min)2. Imin is given by the cathode current at Vref = Vref (IK=10mA) – 15 mV.3. R PS is only provided in HA17431VLP.4. The maximum value is a design value (not measured).HA17431 SeriesRev.1, Sep. 2002, page 8 of 24MPAK-5(5-pin), MPAK(3-pin) and UPAK Marking PatternsThe marking patterns shown below are used on MPAK-5, MPAK and UPAK products. Note that the product code and mark pattern are different. The pattern is laser-printed.Notes: 1. Boxes (1) to (5) in the figures show the position of the letters or numerals, and are not actuallymarked on the package.2. The letters (1) and (2) show the product specific mark pattern.Product (1)(2) HA17431VLP 4 P HA17431VUP 4 R HA17432VUP 4 S HA17431VLTP 3 A HA17432VLTP 3 B HA17431UA 4 A HA17431UPA 4 B HA17432UA 4 C HA17432UPA 4F3. The letter (3) shows the production year code (the last digit of the year) for UPAK products.4. The bars (a), (b) and (c) show a production year code for MPAK-5 and MPAK products as shownbelow. After 2010 the code is repeated every 8 years.Year 2002 2003 2004 2005 2006 2007 2008 2009 (a) None None None Bar Bar Bar Bar None (b) None Bar Bar None None Bar Bar None (c) Bar None Bar None Bar None Bar None5. The letter (4) shows the production month code (see table below).Production month Jan. Feb. Mar. Apr. May. Jun. Jul. Aug. Sep. Oct. Nov. Dec. Marked code A B C D E F G H J K L M6. The letter (5) shows manufacturing code. For UPAK products.Characteristics CurvesHA17431VLP/VP/VPJ/VUP/VLTP, HA17432VUP/VLTPHA17431PJ/PAJ/FPJ/FPAJ/P/PA/UA/UPA/FP/FPA/PNA/PNAJ, HA17432UA/UPAApplication ExamplesAs shown in the figure on the right, this IC operates as an inverting amplifier, with the REF pin as input pin. The open-loop voltage gain is given by the reciprocal of “reference voltage deviation by cathodevoltage change ” in the electrical specifications, and is approximately 50 to 60 dB. The REF pin has a high input impedance, with an input current Iref of 3.8 µA Typ (V version: Iref = 2 µA Typ). The outputimpedance of the output pin K (cathode) is defined as dynamic impedance Z KA , and Z KA is low (0.2 Ω) over a wide cathode current range. A (anode) is used at the minimum potential, such as ground.Figure 1 Operation DiagramApplication HintsNo. Application Example Description1Reference voltage generation circuitVoutGND VinGNDThis is the simplest reference voltage circuit. The valueof the resistance R is set so that cathode current I K ≥ 1 mA.Output is fixed at Vout ≅ 2.5 V.The external capacitor C L (C L ≥ 3.3 µF) is used to prevent oscillation in normal applications.2 Variable output shunt regulator circuitThis is circuit 1 above with variable output provided.Vout ≅ 2.5 V ×Here,(R 1 + R 2)R 2Since the reference input current Iref = 3.8 µA Typ (V version: Iref = 2 µA Typ) flows through R 1, resistance values are chosen to allow the resultant voltage drop to be ignored.3Single power supply invertingcomparator circuitThis is an inverting type comparator with an input threshold voltage of approximately 2.5 V. Rin is the REF pin protection resistance, with a value of several k Ω to several tens of k Ω.R L is the load resistance, selected so that the cathode current I K • 1 mA when Vout is low.Condition C1C2Vin Less then 2.5 V 2.5 V or moreVout V CC (V OH )Approx. 2 V (V OL )ICOFF ON4 AC amplifier circuitGain G =(DC gain)R 1R 2 // R 3Cutoff frequency fc =12π Cf (R 1 // R 2 // R 3)This is an AC amplifier with voltage gain G = –R 1 / (R 2//R 3). The input is cut by capacitance Cin, so that the REF pin is driven by the AC input signal, centered on 2.5 V DC .R 2 also functions as a resistance that determines the DC cathode potential when there is no input, but if the input level is low and there is no risk of Vout clipping to V CC , this can be omitted.To change the frequency characteristic, Cf should be connected as indicated by the dotted line.5Switching power supply erroramplification circuit12Note:LED R3R4: Light emitting diode in photocoupler : Bypass resistor to feed IK(>Imin) when LED current vanishes : LED protection resistanceThis circuit performs control on the secondary side of a transformer, and is often used with a switching power supply that employs a photocoupler for offlining.The output voltage (between V+ and V –) is given by the following formula:Vout ≅ 2.5 V ×(R 1 + R 2)R 2In this circuit, the gain with respect to the Vout error is as follows:G =×R 2(R 1 + R 2)HA17431 open loop gain ×photocoupler total gainAs stated earlier, the HA17431 open-loop gain is 50 to60 dB.6Constant voltage regulator circuitV CCVoutGNDGNDThis is a 3-pin regulator with a discrete configuration, inwhich the output voltageVout = 2.5 V ×(R 2 + R 3)R 3R 1 is a bias resistance for supplying the HA17431 cathode current and the output transistor Q base current.7Discharge type constant current circuitV SI LThis circuit supplies a constant current ofI L ≅[A] into the load. Caution is required2.5 V R Ssince the HA17431 cathode current is also superimposed on IL .The requirement in this circuit is that the cathode current must be greater than Imin = 1 mA. The I Lsetting therefore must be on the order of several mA or more.8Induction type constant current circuitV I L SIn this circuit, the load is connected on the collector side of transistor Q in circuit 7 above. In this case, the load floats from GND, but the HA17431 cathode current is not superimposed on I L , so that I L can be kept small (1 mA or less is possible). The constant current value is the same as for circuit 7 above:I L ≅[A]2.5 V R SDesign Guide for AC-DC SMPS (Switching Mode Power Supply)Use of Shunt Regulator in Transformer Secondary Side ControlThis example is applicable to both forward transformers and flyback transformers. A shunt regulator is used on the secondary side as an error amplifier, and feedback to the primary side is provided via a photocoupler.Figure 2 Typical Shunt Regulator/Error AmplifierDetermination of External Constants for the Shunt RegulatorDC characteristic determination: In figure 2, R1 and R2are protection resistor for the light emitting diodein the photocoupler, and R2 is a bypass resistor to feed IKminimum, and these are determined as shownbelow. The photocoupler specification should be obtained separately from the manufacturer. Using the parameters in figure 2, the following formulas are obtained:R1 =V0– V F– V KI F + I B, R2 =V FI BVKis the HA17431 operating voltage, and is set at around 3 V, taking into account a margin for fluctuation.R2 is the current shunt resistance for the light emitting diode, in which a bias current IBof around 1/5 IFflows.Next, the output voltage can be determined by R3 and R4, and the following formula is obtained:V0 =R3 + R4R4× Vref, Vref = 2.5 V TypThe absolute values of R3 and R4are determined by the HA17431 reference input current Iref and the ACcharacteristics described in the next section. The Iref value is around 3.8 µA Typ. (V version: 2 µA Typ)AC characteristic determination: This refers to the determination of the gain frequency characteristic of the shunt regulator as an error amplifier. Taking the configuration in figure 2, the error amplifier characteristic is as shown in figure 3.Figure 3 HA17431 Error Amplification CharacteristicIn Figure 3, the following formulas are obtained: GainG 1 = G 0 ≈ 50 dB to 60 dB (determined by shunt regulator)G 2 =R 5R 3Corner frequenciesf 1 = 1/(2π C 1 G 0 R 3) f 2 = 1/(2π C 1 R 5)G 0 is the shunt regulator open-loop gain; this is given by the reciprocal of the reference voltage fluctuation ∆Vref/∆V KA , and is approximately 50 dB.Practical ExampleConsider the example of a photocoupler, with an internal light emitting diode V F = 1.05 V and I F = 2.5 mA, power supply output voltage V 2 = 5 V, and bias resistance R 2 current of approximately 1/5 I F at 0.5 mA. If the shunt regulator V K = 3 V, the following values are found.R 1 =5V – 1.05V – 3V2.5mA + 0.5mA= 316(Ω) (330Ω from E24 series)R 2 =1.05V0.5mA= 2.1(k Ω) (2.2k Ω from E24 series)Next, assume that R 3 = R 4 = 10 k Ω. This gives a 5 V output. If R 5 = 3.3 k Ω and C 1 = 0.022 µF, the following values are found.G 2 = 3.3 k Ω / 10 k Ω = 0.33 times (–10 dB) f 1 = 1 / (2 × π × 0.022 µF × 316 × 10 k Ω) = 2.3 (Hz) f 2 = 1 / (2 × π × 0.022 µF × 3.3 k Ω) = 2.2 (kHz)Package DimensionsDisclaimer1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant.6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Sales OfficesHitachi, Ltd.Semiconductor & Integrated CircuitsNippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.Hitachi Asia Ltd. Hitachi Tower16 Collyer Quay #20-00 Singapore 049318Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877URL : .sg URL /Hitachi Asia Ltd.(Taipei Branch Office)4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TPURL : Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components) 7/F., North TowerWorld Finance Centre,Harbour City, Canton RoadTsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281URL : Hitachi Europe GmbHElectronic Components Group Dornacher Straße 3D-85622 FeldkirchenPostfach 201, D-85619 Feldkirchen GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Europe Ltd.Electronic Components Group Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 585200Hitachi Semiconductor (America) Inc.179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:Colophon 6.0。

剧毒物品品名表

聚钒酸铵
钒酸铵钠
砷化汞
硝酸汞
氟化汞
碘化汞
氧化汞
亚碲酸钠
硝普钠
磷化锌
溴
溴化氢
锗烷
三氟化硼
三氯化硼[液化的]
原亚砷酸锶
亚砷酸氢铜
原亚砷酸银
祖母绿，翡翠绿，巴黎绿，醋酸亚砷酸铜
砷酸氢二铵
原砷酸钠；砷酸三钠
砷酸三钙
砷酸氢汞
氟化亚砷
溴化亚砷
碘化亚砷
亚硒酐；无水亚硒酸
硒酸高铜
二氯化二硒
二溴化二硒
金属铊
一氧化(二)铊
二氯二乙基硫醚[禁用]
乙酸三乙基锡
四乙基铅
乙基二氯胂
二氯苯肿
二苯(基)氯胂[禁用]
2－氯乙烯基二氯胂[禁用]
二苯(基)胺氯胂[禁用)
氟乙酸
氟乙酸钠
氟乙酸钾
氯甲酸氯甲酯
氯甲酸三氯甲酯(禁用)
异氰酸甲酯
氟代磺酸甲酯
氟代硫酸甲酯
二硫代焦磷酸四乙酯
氟磷酸(二)异丙酯
硫酸(二)甲酯
甲基氟磷酸异丙酯[禁用]
二甲胺氰磷酸乙酯[禁用]
砷化氢
硒化氢
锑化氢
一氧化氮
四氧化二氮[液化的]
二氧化硫[液化的]
二氧化氯
二氟化氧
三氟化氯
三氟化磷
四氟化硫
四氟化硅
五氟化氯
五氟化磷
六氟化硒
六氟化碲
六氟化钨
氯化溴
氯化氰
溴化羰
氰[液化的]
山奈
钴氰化钾
氰化亚镍
氰化钾镍
氰化高铜
银氰化钾
氰化高汞
氰化钾汞；汞氰化钾
溴化氰
无水氢氰酸
白砒；砒霜；亚砷(酸)酐

1.2343 参考标准号-概述说明以及解释

1.2343 参考标准号-概述说明以及解释1.引言文章1.1 概述部分：概述部分旨在介绍本篇文章所要讨论的主题——1.2343 参考标准号。

本篇文章将通过深入研究和分析，对1.2343参考标准号进行全面的探讨和解读。

1.2343参考标准号作为一个重要的标准号，广泛应用于各行业的实践中。

它是指导和规范相关产品、材料或工艺的基准，具有重要的标志意义。

随着科技的快速发展和经济的不断进步，1.2343参考标准号的应用范围也越来越广泛。

在本篇文章中，我们将会对1.2343参考标准号的定义、重要性和应用进行详细的介绍。

并且，我们将从多个角度出发，对其进行全面的分析和解读。

我们将会深入研究其背后的原理和理论，探讨其在实际应用中的优势和局限性。

同时，我们还将通过具体案例和实例，来展示1.2343参考标准号在实践中的具体应用和效果。

本篇文章的目的是为读者提供关于1.2343参考标准号的全面了解，并引起读者对该标准号的重视和研究兴趣。

通过对其相关知识的介绍和讨论，我们希望能够提高读者对相关领域的认识和理解能力，促进相关行业的发展和进步。

总之，本篇文章将全面介绍1.2343参考标准号的概念、重要性、应用和相关理论。

通过仔细研究和深入探讨，我们希望能够为读者提供一个全面且准确的关于1.2343参考标准号的知识体系，以促进相关领域的发展和进步。

1.2文章结构文章结构在本文中，我们将按照以下结构来展开讨论1.2343参考标准号的相关内容。

第一部分是引言，该部分主要包括对本文的概述、文章的结构以及目的的介绍。

在概述部分，我们将简要介绍1.2343参考标准号的背景和重要性。

在文章结构部分，我们将详细说明本文的组织结构和每个部分的内容。

最后，目的部分将明确本文的写作目的和预期收益。

第二部分是正文，该部分将分为多个主要要点来介绍1.2343参考标准号的相关内容。

在要点1中，我们将详细阐述该标准的定义、适用范围以及主要特征。

要点2将进一步介绍该标准的应用场景、优势和限制。

LF13333中文资料

LF11331/LF13331/LF11332/LF13332/LF11333/LF13333/LF11201/LF13201/LF11202/LF13202Quad SPST JFET Analog SwitchesGeneral DescriptionThese devices are a monolithic combination of bipolar and JFET technology producing the industry’s first one chip quad JFET switch.A unique circuit technique is employed to main-tain a constant resistance over the analog voltage range of ±10V.The input is designed to operate from minimum TTL levels,and switch operation also ensures a break-before-make action.These devices operate from ±15V supplies and swing a ±10V analog signal.The JFET switches are designed for ap-plications where a dc to medium frequency analog signal needs to be controlled.Featuresn Analog signals are not loadedn Constant “ON”resistance for signals up to ±10V and 100kHzn Pin compatible with CMOS switches with the advantage of blow out free handlingn Small signal analog signals to 50MHz n Break-before-make action:t OFF <t ONn High open switch isolation at 1.0MHz:−50dB n Low leakage in “OFF”state:<1.0nA n TTL,DTL,RTL compatibilityn Single disable pin opens all switches in package on LF11331,LF11332,LF11333n LF11201is pin compatible with DG201Test Circuit and Schematic DiagramDS005667-2FIGURE 1.Typical Circuit for One SwitchDS005667-12FIGURE 2.Schematic Diagram (Normally Open)January 1995LF11331/LF13331/LF11332/LF13332/LF11333/LF13333/LF11201/LF13201/LF11202/LF13202Quad SPST JFET Analog Switches©1999National Semiconductor Corporation Absolute Maximum Ratings(Note1)If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.(Note2)Supply Voltage(V CC−V EE)36V Reference Voltage V EE≤V R≤V CC Logic Input Voltage V R−4.0V≤V IN≤V R+6.0V Analog Voltage V EE≤V A≤V CC+6V;V A≤V EE+36V Analog Current|I A|<20mA Power Dissipation(Note3)Molded DIP(N Suffix)500mW Cavity DIP(D Suffix)900mW Operating Temperature RangeLF11201,2and LF11331,2,3−55˚C to+125˚C LF13201,2and LF13331,2,30˚C to+70˚C Storage Temperature−65˚C to+150˚C Soldering InformationN and D Package(10sec.)300˚C SO Package:Vapor Phase(60sec.)215˚C Infrared(15sec.)220˚CElectrical Characteristics(Note4)LF11331/2/3LF13331/2/3Symbol Parameter Conditions LF11201/2LF13201/2UnitsMin Typ Max Min Typ MaxR ON“ON”Resistance V A=0,I D=1mA T A=25˚C150200150250Ω200300200350ΩR ON Match“ON”Resistance Matching T A=25˚C5201050ΩV A Analog Range±10±11±10±11V I S(ON)+Leakage Current in“ON”Condition Switch“ON,”V S=V D=±10V T A=25˚C0.350.310nA I D(ON)3100330nA I S(OFF)Source Current in“OFF”Condition Switch“OFF,”V S=+10V,T A=25˚C0.450.410nAV D=−10V3100330nA I D(OFF)Drain Current in“OFF”Condition Switch“OFF,”V S=+10V,T A=25˚C0.150.110nAV D=−10V3100330nA V INH Logical“1”Input Voltage 2.0 2.0V V INL Logical“0”Input Voltage0.80.8VI INH Logical“1”Input Current V IN=5V T A=25˚C 3.610253.640100µAI INL Logical“0”Input Current V IN=0.8T A=25˚C0.10.1µA11µA t ON Delay Time“ON”V S=±10V,(Figure3)T A=25˚C500500ns t OFF Delay Time“OFF”V S=±10V,(Figure3)T A=25˚C9090ns t ON−t OFF Break-Before-Make V S=±10V,(Figure3)T A=25˚C8080ns C S(OFF)Source Capacitance Switch“OFF,”V S=±10V T A=25˚C 4.0 4.0pF C D(OFF)Drain Capacitance Switch“OFF,”V D=±10V T A=25˚C 3.0 3.0pF C S(ON)+Active Source and Drain Capacitance Switch“ON,”V S=V D=0V T A=25˚C 5.0 5.0pF C D(ON)I SO(OFF)“OFF”Isolation(Figure4),(Note5)T A=25˚C−50−50dB CT Crosstalk(Figure4),(Note5)T A=25˚C−65−65dB SR Analog Slew Rate(Note6)T A=25˚C5050V/µsI DIS Disable Current(Figure5),(Note7)T A=25˚C0.4 1.00.6 1.5mA0.6 1.50.9 2.3mAI EE Negative Supply Current All Switches“OFF,”V S=±10V T A=25˚C 3.0 5.0 4.37.0mA4.27.5 6.010.5mAI R Reference Supply Current All Switches“OFF,”V S=±10V T A=25˚C 2.0 4.0 2.7 5.0mA2.8 6.03.87.5mAI CC Positive Supply Current All Switches“OFF,”V S=±10V T A=25˚C 4.5 6.07.09.0mA6.39.09.813.5mANote1:“Absolute Maximum Ratings”indicate limits beyond which damage to the device may occur.Operating Ratings indicate conditions for which the device is functional,but do not guarantee specific performance limits.Note2:Refer to RETSF11201X,RETSF11331X,RETSF11332X and RETSF11333X for military specifications.Note3:For operating at high temperature the molded DIP products must be derated based on a+100˚C maximum junction temperature and a thermal resistance of+150˚C/W,devices in the cavity DIP are based on a+150˚C maximum junction temperature and are derated at±100˚C/W.2Electrical Characteristics(Note4)(Continued)Note4:Unless otherwise specified,V CC=+15V,V EE=−15V,V R=0V,and limits apply for−55˚C≤T A≤+125˚C for the LF11331/2/3and the LF11201/2,−25˚C≤T A≤+85˚C for the LF13331/2/3and the LF13201/2.Note5:These parameters are limited by the pin to pin capacitance of the package.Note6:This is the analog signal slew rate above which the signal is distorted as a result of finite internal slew rates.Note7:All switches in the device are turned“OFF”by saturating a transistor at the disable node as shown in Figure5.The delay time will be approximately equal to the t ON or t OFF plus the delay introduced by the external transistor.Note8:This graph indicates the analog current at which1%of the analog current is lost when the drain is positive with respect to the source.Note9:θJA(Typical)Thermal ResistanceMolded DIP(N)85˚C/WCavity DIP(D)100˚C/WSmall Outline(M)105˚C/WConnection Diagrams(Top View for SO and Dual-In-Line Packages)(All Switches Shown are For Logical“0”)LF11331/LF13331DS005667-1LF11332/LF13332DS005667-13LF11333/LF13333DS005667-14LF11201/LF13201DS005667-15 3Connection Diagrams(Top View for SO and Dual-In-Line Packages)(All Switches Shown are For Logical “0”)(Continued)LF11202/LF13202DS005667-16Order Number LF13201D,LF11201D,LF11201D/883,LF13202D,LF11202D,LF11202D/883,LF13331D,LF11331D, LF11331D/883,LF13332D,LF11332D,LF11332D/883,LF13333D,LF11333D or LH11333D/883See NS Package Number D16COrder Number LF13201M,LF13202M,LF13331M,LF13332M or LF13333MSee NS Package Number M16AOrder Number LF13201N,LF13202N,LF13331N,LF13332N or LF13333NSee NS Package Number N16A4Test Circuit and Typical Performance CurvesDelay Time,Rise Time,Settling Time,andSwitching TransientsDS005667-17DS005667-18DS005667-19DS005667-20DS005667-21DS005667-225Additional Test CircuitsTypical Performance CharacteristicsDS005667-39DS005667-40FIGURE 3.t ON ,t OFF Test Circuit and Waveforms for a Normally Open SwitchDS005667-41FIGURE 4.“OFF”Isolation,Crosstalk,Small Signal Response“ON”ResistanceDS005667-23“ON”ResistanceDS005667-24“ON”ResistanceDS005667-25 6Typical Performance Characteristics(Continued)Break-Before-Make ActionDS005667-26Switching TimesDS005667-27Crosstalk and“OFF”Isolation vs FrequencyUsing Test Circuit ofFigure5DS005667-28Supply CurrentDS005667-29Supply CurrentDS005667-30Supply CurrentDS005667-31Switch Leakage CurrentsDS005667-32Switch Leakage CurrentDS005667-33Switch CapacitancesDS005667-34 7Typical Performance Characteristics(Continued)Application HintsGENERAL INFORMATIONThese devices are monolithic quad JFET analog switches with “ON”resistances which are essentially independent of analog voltage or analog current.The leakage currents are typically less than 1nA at 25˚C in both the “OFF”and “ON”switch states and introduce negligible errors in most applica-tions.Each switch is controlled by minimum TTL logic levels at its input and is designed to turn “OFF”faster than it will turn “ON.”This prevents two analog sources from being tran-siently connected together during switching.The switches were designed for applications which require break-before-make action,no analog current loss,medium speed switching times and moderate analog currents.Because these analog switches are JFET rather than CMOS,they do not require special handling.LOGIC INPUTSThe logic input (IN),of each switch,is referenced to two for-ward diode drops (1.4V at 25˚C)from the reference supply (V R )which makes it compatible with DTL,RTL,and TTL logic families.For normal operation,the logic “0”voltage can range from 0.8V to −4.0V with respect to V R and the logic “1”voltage can range from 2.0V to 6.0V with respect to V R ,pro-vided V IN is not greater than (V CC −2.5V).If the input voltage is greater than (V CC −2.5V),the input current will increase.Ifthe input voltage exceeds 6.0V or −4.0V with respect to V R ,a resistor in series with the input should be used to limit the input current to less than 100µA.ANALOG VOLTAGE AND CURRENTAnalog VoltageEach switch has a constant “ON”resistance (R ON )for analog voltages from (V EE +5V)to (V CC −5V).For analog voltages greater than (V CC −5V),the switch will remain ON indepen-dent of the logic input voltage.For analog voltages less than (V EE +5V),the ON resistance of the switch will increase.Al-though the switch will not operate normally when the analog voltage is out of the previously mentioned range,the source voltage can go to either (V EE +36V)or (V CC +6V),whichever is more positive,and can go as negative as V EE without de-struction.The drain (D)voltage can also go to either (V EE +36V)or (V CC +6V),whichever is more positive,and can go as negative as (V CC −36V)without destruction.Analog CurrentWith the source (S)positive with respect to the drain (D),the R ON is constant for low analog currents,but will increase at higher currents (>5mA)when the FET enters the saturation region.However,if the drain is positive with respect to the source and a small analog current loss at high analog cur-rents (Note 6)is tolerable,a low R ON can be maintained for analog currents greater than 5mA at 25˚C.Slew Rate of Analog Voltage Above Which Signal Loading OccursDS005667-35Small Signal ResponseDS005667-36Maximum Accurate Analog Current vs TemperatureDS005667-37Logical “1”Input Bias CurrentDS005667-38 8Application Hints(Continued)LEAKAGE CURRENTSThe drain and source leakage currents,in both the ON and the OFF states of each switch,are typically less than1nA at 25˚C and less than100nA at125˚C.As shown in the typical curves,these leakage currents are Dependent on power supply voltages,analog voltage,analog current and the source to drain voltage.DELAY TIMESThe delay time OFF(t OFF)is essentially independent of both the analog voltage and temperature.The delay time ON (t ON)will decrease as either(V CC−V A)decreases or the tem-perature decreases.POWER SUPPLIESThe voltage between the positive supply(V CC)and either the negative supply(V EE)or the reference supply(V R)can be as much as36V.To accommodate variations in input logic refer-ence voltages,V R can range from V EE to(V CC−4.5V).Care should be taken to ensure that the power supply leads for the device never become reversed in polarity or that the device is never inadvertently installed backwards in a test socket.If one of these conditions occurs,the supplies would zener an internal diode to an unlimited current;and result in a de-stroyed device.SWITCHING TRANSIENTSWhen a switch is turned OFF or ON,transients will appear at the load due to the internal transient voltage at the gate of the switch JFET being coupled to the drain and source by the junction capacitances of the JFET.The magnitude of these transients is dependent on the load.A lower value R L produces a lower transient voltage.A negative transient oc-curs during the delay time ON,while a positive transient oc-curs during the delay time OFF.These transients are rela-tively small when compared to faster switch families. DISABLE NODEThis node can be used,as shown in Figure5,to turn all the switches in the unit off independent of logic inputs.Normally, the node floats freely at an internal diode drop(≈0.7V)above V R.When the external transistor in Figure5is saturated,the node is pulled very close to V R and the unit is disabled.Typi-cally,the current from the node will be less than1mA.This feature is not available on the LF11201or LF11202series.Typical ApplicationsDS005667-6FIGURE5.Disable FunctionSample and Hold with ResetDS005667-42 9Typical Applications(Continued)Programmable Inverting Non-Inverting Operational AmplifierDS005667-43Programmable Gain Operational AmplifierDS005667-44 10Typical Applications(Continued)DemultiplexerDS005667-45Multiplexer/MixerDS005667-4611Typical Applications(Continued)8-Channel Analog Commutator with6-Channel Select LogicDS005667-47Chopper Channel AmplifierDS005667-48 12Typical Applications(Continued)Self-Zeroing Operational AmplifierDS005667-49Programmable Integrator with Reset and HoldDS005667-5013Typical Applications(Continued)Staircase Transfer Function Operational AmplifierDS005667-51 14Typical Applications(Continued)DSB Modulator-DemodulatorDS005667-111516Physical Dimensions inches(millimeters)unless otherwise notedOrder Number LF11201D,LF11201D/883,LF13201D,LF11202D,LF11202D/883,LF13202D,LF11331D,LF11331D/883,LF13331D,LF11332D,LF11332D/883,LF13332D,LF11333D,LF11333D/883or LF13333DNS Package Number D16COrder Number LF113201M,LF13202M,LF13331M,LF13332M or LF13333MNS Package Number M16A17Physical Dimensions inches(millimeters)unless otherwise noted(Continued)LIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DE-VICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMI-CONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or sys-tems which,(a)are intended for surgical implant intothe body,or(b)support or sustain life,and whose fail-ure to perform when properly used in accordancewith instructions for use provided in the labeling,canbe reasonably expected to result in a significant injuryto the user.2.A critical component is any component of a life supportdevice or system whose failure to perform can be rea-sonably expected to cause the failure of the life supportdevice or system,or to affect its safety or effectiveness.National SemiconductorCorporationAmericasTel:1-800-272-9959Fax:1-800-737-7018Email:support@National SemiconductorEuropeFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)180-5308585English Tel:+49(0)180-5327832Français Tel:+49(0)180-5329358Italiano Tel:+49(0)180-5341680National SemiconductorAsia Pacific CustomerResponse GroupTel:65-2544466Fax:65-2504466Email:sea.support@National SemiconductorJapan Ltd.Tel:81-3-5639-7560Fax:81-3-5639-7507Order Number LF13201N,LF13202N,LF13331N,LF13332N or LF13333NNS Package Number N16ALF11331/LF13331/LF11332/LF13332/LF11333/LF13333/LF1121/LF1321/LF1122/LF1322QuadSPSTJFETAnalogSwitchesNational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.。

GSO海湾认证

Full-Flow Lubricating Oil Filters for Internal Combustion Engines– Dimensions
Methods of Test for Full-flow Lubricating Oil Filters for InternalCombustion Engines - Part 6: Static Burst Pressure
Light Duty Diesel Engined Vehicles - Part 1: Determination of Exhaust Gaseous Pollutants
Motor Vehicles - Methods of Testing for Pollutants Emitted from Light Duty Diesel Engined Vehicles - Part 2: Determination of Smoke Motor Vehicles Tyres - Temporary Use Spare Wheel/Tyres and Their Methods of Test Motor Vehicles - Protection Against Theft Motor Vehicle - Head Lamps Safety Requirements. Motor Vehicles - Head Restraints and Their Methods of Test
Motor Vehicles - Methods of Test for Impact Strength - Part 4: Roof Strength
Motor Vehicles - Impact Strength Motor Vehicles: Front and Rear Exterior Protection Devices for

S-1133资料

Features
• Output voltage : • Voltage setting via external resistor : • Input voltage range : • High-accuracy output voltage : • Low dropout voltage : • Low current consumption : • Output current : • Low ESR capacitor can be used : 1.2 to 6.0 V, selectable in 0.1 V steps. Selectable from 1.8 to 8.2 V (S-1133B00/S-1133A00) 2.0 to 10 V ±1.0% accuracy (1.2 to 1.4 V output product : ±15 mV accuracy) 130 mV typ. (3.0 V output product, IOUT = 100 mA) During operation : 60 µA typ., 90 µA max. During shutdown : 0.1 µA typ., 1.0 µA max. 300 mA output is possible (at VIN ≥ VOUT(S) + 1.0 V)*1 A ceramic capacitor of 1.0 µF or more can be used for the input and output capacitors. (A ceramic capacitor of 2.2 µF or more can be used for products whose output voltage is 1.7 V or less.) 70 dB typ. (at 1.0 kHz, VOUT = 1.2 V) Overcurrent of output transistor can be restricted. Prevents damage due to overheating. Ensures long battery life. SOT-89-5, SNT-8A

3121中文资料

These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both tem-perature and supply voltage changes. The unipolar switching character-istic makes these devices ideal for use with a simple bar or rod magnet.The three basic devices (3121, 3122, and 3123) are identical except for magnetic switch points.Each device includes a voltage regulator for operation with supply voltages of 4.5 voltas to 24 volts, reverse battery protection diode,quadratic Hall-voltage generator, temperature compensation circuitry,small-signal amplifier, Schmitt trigger, and an open-collector output to sink up to 25 mA. With suitable output pull up, they can be used with bipolar or CMOS logic circuits. The 3121 is an improved replacement for the 3113 and 3119.The first character of the part number suffix determines the device operating temperature range. Suffix ‘E–’ is for the automotive and industrial temperature range of -40°C to +85°C. Suffix ‘L–’ is for the automotive and military temperature range of -40°C to +150°C. Three package styles provide a magnetically optimized package for mostapplications. Suffix ‘–LT’ is a miniature SOT-89/TO-243AA transistor package for surface-mount applications; suffix ‘–U’ is a three-lead plastic mini-SIP while suffix ‘–UA’ is a three-lead ultra-mini-SIP.HALL-EFFECT SWITCHESFOR HIGH-TEMPERATURE OPERATIONAlways order by complete part number, e.g., A3121EU .FEATURES and BENEFITSI Superior Temp. Stability for Automotive or Industrial Applications I 4.5 V to 24 V Operation … Needs Only An Unregulated Supply I Open-Collector 25 mA Output … Compatible with Digital Logic I Reverse Battery ProtectionI Activate with Small, Commercially Available Permanent Magnets I Solid-State Reliability … No Moving Parts I Small SizeI Resistant to Physical StressData Sheet 27621.4B3121, 3122, AND 31233121, 3122, AND 3123HALL-EFFECT SWITCHES FOR HIGH-TEMPERATUREOPERATION115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-5000LimitsCharacteristic Symbol Test ConditionsMin.Typ.Max.Units Supply VoltageV CC Operating 4.5—24VOutput Saturation Voltage V OUT(SAT)I OUT = 20 mA, B > B OP —140400mV Output Leakage Current I OFF V OUT = 24 V, B < B RP —<1.010µA Supply Current I CC B < B RP (Output OFF)— 4.69.0mA Output Rise Time t r R L = 820 Ω, C L = 20 pF —0.04 2.0µs Output Fall Timet fR L = 820 Ω, C L = 20 pF—0.182.0µsELECTRICAL CHARACTERISTICS over operating temperature range, at V CC = 12 V.MAGNETIC CHARACTERISTICS in gauss over operating supply voltage range.Part Numbers*A3121A3122A3123Characteristic Min.Typ.Max.Min.Typ.Max.Min.Typ.Max B OP at T A = 25°C250350450280340400250345440over operating temp. range 220350500260340430230345470B RP at T A = 25°C125245380140235330180240300over operating temp. range 80245410120235360160240330B hys at T A = 25°C701051407010514070105140over operating temp. range601051507010514070105140NOTES:Typical values are at T A = +25°C and V CC = 12 V.B OP = operate point (output turns ON); B RP = release point (output turns OFF); B hys = hysteresis (B OP - B RP ).*Complete part number includes a suffix to identify operating temperature range (E- or L-) and package type ( -LT, -U, or -UA).Copyright © 1992, 1999, Allegro MicroSystems, Inc.3121, 3122, AND 3123HALL-EFFECT SWITCHES FOR HIGH-TEMPERATUREOPERATIONSWITCH POINTSOUTPUT SATURATION VOLTAGE* Complete part number includes a suffix denoting operating temperature range (E- or L-) and package type ( -LT, -U, or -UA).TYPICAL OPERATING CHARACTERISTICSAMBIENT TEMPERATURE IN °CDwg. GH-038S W I T C H P O I N T I N G A U S S30040020010000AMBIENT TEMPERATURE IN °CDwg. GH-0400255075100AMBIENT TEMPERATURE IN °C-50Dwg. GH-039-25S U P P L Y C U R R E N T I N m A10152025SUPPLY VOLTAGE IN VOLTSDwg. GH-0415S U P P L Y C U R R E N T I N m A0SUPPLY CURRENTSUPPLY CURRENT3121, 3122, AND 3123HALL-EFFECT SWITCHES FOR HIGH-TEMPERATUREOPERATION115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-5000OPERATIONThe output of these devices (pin 3) switches low when the mag-netic field at the Hall sensor exceeds the operate point threshold (B OP ).At this point, the output voltage is V OUT(SAT). When the magnetic field is reduced to below the release point threshold (B RP ), the device output goes high. The difference in the magnetic operate and release points is called the hysteresis (B hys ) of the device. This built-in hysteresis allows clean switching of the output even in the presence of external mechani-cal vibration and electrical noise.APPLICATIONS INFORMATIONHall effect applications information is available in the “Hall-Effect IC Applications Guide”, which can be found in the latest issue of Allegro MicroSystems Data Book AMS-702.CHANGE IN OPERATE POINT10152025SUPPLY VOLTAGE IN VOLTSDwg. GH-04253121, 3122, AND 3123HALL-EFFECT SWITCHES FOR HIGH-TEMPERATUREOPERATIONPACKAGE DESIGNATOR ‘LT’Dimensions in Inches (for reference only)Dimensions in Millimeters (controlling dimensions)0.0140.0170.350.44NOTE: Exact body and lead configuration at vendor's option within limits shown.3121, 3122, AND 3123HALL-EFFECT SWITCHES FOR HIGH-TEMPERATUREOPERATION115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-5000°°PACKAGE DESIGNATOR ‘U’Dimensions in Inches Dimensions in Millimeters(controlling dimensions)(for reference only)NOTES: 1.Tolerances on package height and width represent allowable mold offsets.Dimensions given are measured at the widest point (parting line).2.Exact body and lead configuration at vendor’s option within limits shown.3.Height does not include mold gate flash.4.Recommended minimum PWB hole diameter to clear transition area is 0.035" (0.89 mm).5.Where no tolerance is specified, dimension is nominal.Devices in the ‘U’ package areNOT RECOMMENDED FOR NEW DESIGN3121, 3122, AND 3123HALL-EFFECT SWITCHES FOR HIGH-TEMPERATUREOPERATIONPACKAGE DESIGNATOR ‘UA’Dimensions in Inches Dimensions in Millimeters(controlling dimensions)(for reference only)NOTES: 1.Tolerances on package height and width represent allowable mold offsets.Dimensions given are measured at the widest point (parting line).2.Exact body and lead configuration at vendor’s option within limits shown.3.Height does not include mold gate flash.4.Recommended minimum PWB hole diameter to clear transition area is 0.035" (0.89 mm).5.Where no tolerance is specified, dimension is nominal.°°3121, 3122, AND 3123HALL-EFFECT SWITCHES FOR HIGH-TEMPERATUREOPERATION115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-5000The products described herein are manufactured under one or more of the following U.S. patents: 5,045,920; 5,264,783; 5,442,283;5,389,889; 5,581,179; 5,517,112; 5,619,137; 5,621,319; 5,650,719;5,686,894; 5,694,038; 5,729,130; 5,917,320; and other patents pending.Allegro MicroSystems, Inc. reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, ormanufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current.Allegro products are not authorized for use as critical components in life-support appliances, devices, or systems without express written approval.The information included herein is believed to be accurate andreliable. However, Allegro MicroSystems, Inc. assumes no responsibil-ity for its use; nor for any infringements of patents or other rights of third parties that may result from its use.。

AZ1117H-3.3E1中文资料

CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ11171Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedGeneral DescriptionThe AZ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output cur-rent.The AZ1117 series provides current limiting and ther-mal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within 1% for 1.5V , 1.8V , 2.5V , 2.85V , 3.3V , 5.0V and adjustable versions or 2% for 1.2V version. Current limit is trimmed to ensure specified output current and controlled short-circuit current. On-chip thermal shut-down provides protection against any combination of overload and ambient temperature that would create excessive junction temperature.The AZ1117 has an adjustable version, that can pro-vide the output voltage from 1.25V to 12V with only 2external resistors.The AZ1117 series is available in the industry standard SOT-223, SOT-89-3, TO-220-3, TO-252-2 and TO-263-3 power packages.Features·Low Dropout V oltage: 1.15V at 1A Output Cur-rent·Trimmed Current Limit ·On-chip Thermal Shutdown·Three-terminal Adjustable or Fixed 1.2V , 1.5V ,1.8V , 2.5V , 2.85V , 3.3V , 5.0V·Operation Junction Temperature: -40 to 125o CApplications·PC Motherboard ·LCD Monitor·Graphic Card·DVD-video Player·NIC/Switch·Telecom Equipment ·ADSL Modem·Printer and other Peripheral EquipmentSOT-223 TO-220-3TO-252-2Figure 1. Package Types of AZ1117SOT-89-3 TO-263-3CURRENT MODE PWM CONTROLLER AZ2842/3/4/51A LOW DROPOUT LINEAR REGULATOR AZ11172Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedH Package(SOT-223)T Package (TO-220-3)(TO-252-2)Pin ConfigurationV OUT INPUT OUTPUT ADJ/GNDV OUTINPUT OUTPUT ADJ/GNDV OUTFigure 2. Pin Configuration of AZ1117R Package INPUTV OUTS Package (TO-263-3)D Package INPUT OUTPUT ADJ/GND(SOT-89-3)V OUTCURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ11173Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedFunctional Block DiagramFigure 3. Functional Block Diagram of AZ1117CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ11174Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedCircuit Type PackageR: SOT-89-3D: TO-252-2H: SOT-223T: TO-220-3ADJ: Adjustable Output 1.5: Fixed Output 1.5V S: TO-263-3 1.8: Fixed Output 1.8V 2.5: Fixed Output 2.5V 3.3: Fixed Output 3.3V 5.0: Fixed Output 5.0VE1: Lead FreeBlank: Tin Lead AZ1117 -TR: Tape and ReelBlank: TubePackageTempera-ture RangePart NumberMarking IDPackingTypeTin Lead Lead FreeTin Lead Lead FreeSOT-223-40 to 125o CAZ1117H-ADJTR AZ1117H-ADJTRE1H11A EH11A Tape & Reel AZ1117H-1.2TR AZ1117H-1.2TRE1H18A EH18A Tape & Reel AZ1117H-1.5TRAZ1117H-1.5TRE1H12A EH12A Tape & Reel AZ1117H-1.8TR AZ1117H-1.8TRE1H13A EH13A Tape & Reel AZ1117H-2.5TR AZ1117H-2.5TRE1H14A EH14A Tape & Reel AZ1117H-2.85TR AZ1117H-2.85TRE1H15A EH15A Tape & Reel AZ1117H-3.3TR AZ1117H-3.3TRE1H16A EH16A Tape & Reel AZ1117H-5.0TR AZ1117H-5.0TRE1H17A EH17A Tape & Reel SOT-89-3-40 to 125o CAZ1117R-ADJTR AZ1117R-ADJTRE1R17A E17A Tape & Reel AZ1117R-1.2TR AZ1117R-1.2TRE1R17G E17G Tape & Reel AZ1117R-1.5TRAZ1117R-1.5TRE1R17B E17B Tape & Reel AZ1117R-1.8TR AZ1117R-1.8TRE1R17C E17C Tape & Reel AZ1117R-2.5TR AZ1117R-2.5TRE1R17D E17D Tape & Reel AZ1117R-2.85TR AZ1117R-2.85TRE1R17H E17H Tape & Reel AZ1117R-3.3TR AZ1117R-3.3TRE1R17E E17E Tape & Reel AZ1117R-5.0TR AZ1117R-5.0TRE1R17F E17F Tape & ReelTO-220-3-40 to 125o CAZ1117T-ADJ AZ1117T-ADJE1AZ1117T-ADJ AZ1117T-ADJE1Tube AZ1117T-1.2AZ1117T-1.2E1 AZ1117T-1.2 AZ1117T-1.2E1Tube AZ1117T-1.5AZ1117T-1.5E1 AZ1117T-1.5 AZ1117T-1.5E1Tube AZ1117T-1.8AZ1117T-1.8E1 AZ1117T-1.8 AZ1117T-1.8E1Tube AZ1117T-2.5AZ1117T-2.5E1 AZ1117T-2.5 AZ1117T-2.5E1Tube AZ1117T-2.85AZ1117T-2.85E1 AZ1117T-2.85 AZ1117T-2.85E1Tube AZ1117T-3.3AZ1117T-3.3E1 AZ1117T-3.3 AZ1117T-3.3E1Tube AZ1117T-5.0AZ1117T-5.0E1AZ1117T-5.0AZ1117T-5.0E1Tube1.2: Fixed Output 1.2V2.85: Fixed Output 2.85V Ordering InformationCURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ11175Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedPackageTempera-ture RangePart NumberMarking IDPackingTypeTin Lead Lead FreeTin Lead Lead FreeTO-252-2-40 to 125o CAZ1117D-ADJ AZ1117D-ADJE1AZ1117D-ADJ AZ1117D-ADJE1Tube AZ1117D-ADJTR AZ1117D-ADJTRE1AZ1117D-ADJ AZ1117D-ADJE1Tape & ReelAZ1117D-1.2AZ1117D-1.2E1AZ1117D-1.2AZ1117D-1.2E1Tube AZ1117D-1.2TR AZ1117D-1.2TRE1AZ1117D-1.2AZ1117D-1.2E1Tape & ReelAZ1117D-1.5AZ1117D-1.5E1AZ1117D-1.5AZ1117D-1.5E1Tube AZ1117D-1.5TR AZ1117D-1.5TRE1AZ1117D-1.5AZ1117D-1.5E1Tape & ReelAZ1117D-1.8AZ1117D-1.8E1AZ1117D-1.8AZ1117D-1.8E1Tube AZ1117D-1.8TR AZ1117D-1.8TRE1AZ1117D-1.8AZ1117D-1.8E1Tape & ReelAZ1117D-2.5AZ1117D-2.5E1AZ1117D-2.5AZ1117D-2.5E1Tube AZ1117D-2.5TR AZ1117D-2.5TRE1AZ1117D-2.5AZ1117D-2.5E1Tape & ReelAZ1117D-2.85AZ1117D-2.85E1AZ1117D-2.85AZ1117D-2.85E1Tube AZ1117D-2.85TR AZ1117D-2.85TRE1AZ1117D-2.85AZ1117D-2.85E1Tape & ReelAZ1117D-3.3AZ1117D-3.3E1AZ1117D-3.3AZ1117D-3.3E1Tube AZ1117D-3.3TR AZ1117D-3.3TRE1AZ1117D-3.3AZ1117D-3.3E1Tape & ReelAZ1117D-5.0AZ1117D-5.0E1AZ1117D-5.0AZ1117D-5.0E1Tube AZ1117D-5.0TR AZ1117D-5.0TRE1AZ1117D-5.0AZ1117D-5.0E1Tape & ReelTO-263-3-40 to 125o CAZ1117S-ADJ AZ1117S-ADJE1AZ1117S-ADJ AZ1117S-ADJE1Tube AZ1117S-ADJTR AZ1117S-ADJTRE1AZ1117S-ADJ AZ1117S-ADJE1Tape & ReelAZ1117S-1.2AZ1117S-1.2E1AZ1117S-1.2AZ1117S-1.2E1Tube AZ1117S-1.2TR AZ1117S-1.2TRE1AZ1117S-1.2AZ1117S-1.2E1Tape & ReelAZ1117S-1.5AZ1117S-1.5E1AZ1117S-1.5AZ1117S-1.5E1Tube AZ1117S-1.5TR AZ1117S-1.5TRE1AZ1117S-1.5AZ1117S-1.5E1Tape & ReelAZ1117S-1.8AZ1117S-1.8E1AZ1117S-1.8AZ1117S-1.8E1Tube AZ1117S-1.8TR AZ1117S-1.8TRE1AZ1117S-1.8AZ1117S-1.8E1Tape & ReelAZ1117S-2.5AZ1117S-2.5E1AZ1117S-2.5AZ1117S-2.5E1Tube AZ1117S-2.5TR AZ1117S-2.5TRE1AZ1117S-2.5AZ1117S-2.5E1Tape & ReelAZ1117S-2.85AZ1117S-2.85E1AZ1117S-2.85AZ1117S-2.85E1Tube AZ1117S-2.85TR AZ1117S-2.85TRE1AZ1117S-2.85AZ1117S-2.85E1Tape & ReelAZ1117S-3.3AZ1117S-3.3E1AZ1117S-3.3AZ1117S-3.3E1Tube AZ1117S-3.3TR AZ1117S-3.3TRE1AZ1117S-3.3AZ1117S-3.3E1Tape & ReelAZ1117S-5.0AZ1117S-5.0E1AZ1117S-5.0AZ1117S-5.0E1Tube AZ1117S-5.0TRAZ1117S-5.0TRE1AZ1117S-5.0AZ1117S-5.0E1Tape & ReelBCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.Ordering Information (Continued)CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ11176Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedNote 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.Recommended Operating ConditionsParameter SymbolMinMaxUnit Input V oltageV IN 20VMaximum Junction Temperature T J 150oC Storage TemperatureT S -65150 oCLead Temperature (Soldering, 10sec)T LEAD 300 o CESD (Machine Model)ESD600VParameter SymbolMinMaxUnitInput V oltageV IN 15VOperating Junction Temperature RangeT J-40 125o CAbsolute Maximum Ratings (Note 1)CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ11177Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedParameter Symbol ConditionsMin Typ Max Unit Reference V oltageV REFI OUT = 10m Α, V IN -V OUT = 2V 10mA ≤ I OUT ≤ 1Α, 1.4V ≤ V IN -V OUT ≤ 8V , P ≤ Maximum Power Dissipation 1.238 1.2251.250 1.250 1.2621.270VLine Regulation ∆V OUT I OUT = 10mA, 1.5V ≤ V IN -V OUT ≤ 10V 0.035 0.2 %Load Regulation ∆V OUTV IN -V OUT = 2V , 10mA ≤ I OUT ≤ 1Α 0.2 0.4 %Dropout V oltage∆V REF = 1%, I OUT = 0.1Α 1.00 1.1 V ∆V REF = 1%, I OUT = 0.5Α 1.08 1.18 V ∆V REF = 1%, I OUT = 1.0Α1.15 1.25V Current Limit I LIMITV IN -V OUT = 2V1.25 1.35 A Adjust Pin Current 60 120 µA Adjust Pin Current Change1.4V ≤ V IN -V OUT ≤ 10V , 10mA ≤ I OUT ≤ 1A 0.2 5 µA Minimum Load Current (ADJ)1.5V ≤ V IN -V OUT ≤ 10V (ADJ only)1.7 5 mA Quiescent Current V IN =V OUT +1.25V5 10 mA Ripple Rejection f =120Hz, C OUT =22µF Tantalum, V IN -V OUT = 3V , I OUT =1A60 75 dB Temperature Stability 0.5 %Long -Term Stability T A =125o C, 1000hrs 0.3 %RMS Output Noise (% of V OUT )T A =25o C, 10Hz ≤ f ≤ 10kHz 0.003 %Thermal Resistance, Junction to CaseθJCSOT-223SOT-89-3TO-252-2TO-220-3TO-263-315 75 10 4.5 4 oC/WThermal Shutdown Junction Temperature150 o C Thermal Shutdown Hysteresis25oCOperating Conditions: V IN ≤10V , T J =25o C, unless otherwise specified.AZ1117-ADJ Electrical CharacteristicsElectrical CharacteristicsCURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ11178Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedParameter Symbol Conditions Min Typ MaxUnitOutput V oltage V OUT I OUT = 10m Α, V IN = 3.2V10mA ≤ I OUT ≤ 1A, 3.0V ≤ V IN ≤ 10V 1.176 1.1521.21.2 1.224 1.248 V Line Regulation ∆V OUT I OUT = 10mA, 1.5V ≤ V IN -V OUT ≤ 10V 1 6 mV Load Regulation ∆V OUTV IN -V OUT = 2V , 10mA ≤ I OUT ≤1Α 1 10 mV Dropout V oltage∆V OUT = 1%, I OUT = 0.1Α 1.00 1.1 V ∆V OUT = 1%, I OUT = 0.5Α 1.08 1.18 V ∆V OUT = 1%, I OUT = 1.0Α1.15 1.25V Current Limit I LIMITV IN -V OUT = 2V 1.25 1.35 A Quiescent Current V IN =V OUT +1.25V5 10 mA Ripple Rejection f =120Hz, C OUT =22µF Tantalum, V IN -V OUT = 3V , I OUT =1A60 75 dB Temperature Stability 0.5 %Long -Term Stability T A =125o C, 1000hrs 0.3 %RMS Output Noise (% of V OUT )T A =25o C, 10Hz ≤ f ≤ 10kHz 0.003 %Thermal Resistance, Junction to CaseθJCSOT-223SOT-89-3TO-252-2TO-220-3TO-263-315 75 10 4.5 4 o C/WThermal Shutdown Junction Temperature150 o C Thermal Shutdown Hysteresis25oCOperating Conditions: V IN ≤10V , T J =25o C, unless otherwise specified.AZ1117-1.2V Electrical CharacteristicsElectrical Characteristics (Continued)CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ11179Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedParameter Symbol Conditions Min Typ MaxUnitOutput V oltage V OUT I OUT = 10m Α, V IN = 3.5V10mA ≤ I OUT ≤ 1A, 3.0V ≤ V IN ≤ 10V 1.485 1.4701.5 1.5 1.515 1.530 V Line Regulation ∆V OUT I OUT = 10mA, 1.5V ≤ V IN -V OUT ≤ 10V 1 6 mV Load Regulation ∆V OUTV IN -V OUT = 2V , 10mA ≤ I OUT ≤1Α 1 10 mV Dropout V oltage∆V OUT = 1%, I OUT = 0.1Α 1.00 1.1 V ∆V OUT = 1%, I OUT = 0.5Α 1.08 1.18 V ∆V OUT = 1%, I OUT = 1.0Α1.15 1.25V Current Limit I LIMITV IN -V OUT = 2V 1.25 1.35 A Quiescent Current V IN =V OUT +1.25V5 10 mA Ripple Rejection f =120Hz, C OUT =22µF Tantalum, V IN -V OUT = 3V , I OUT =1A60 75 dB Temperature Stability 0.5 %Long -Term Stability T A =125o C, 1000hrs 0.3 %RMS Output Noise (% of V OUT )T A =25o C, 10Hz ≤ f ≤ 10kHz 0.003 %Thermal Resistance, Junction to CaseθJCSOT-223SOT-89-3TO-252-2TO-220-3TO-263-315 75 10 4.5 4 o C/WThermal Shutdown Junction Temperature150 o C Thermal Shutdown Hysteresis25oCOperating Conditions: V IN ≤10V , T J =25o C, unless otherwise specified.AZ1117-1.5V Electrical CharacteristicsElectrical Characteristics (Continued)CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ111710Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedParameter Symbol Conditions Min Typ MaxUnitOutput V oltage V OUT I OUT = 10m Α, V IN = 3.8V10mA ≤ I OUT ≤ 1A, 3.2V ≤ V IN ≤ 10V 1.782 1.7461.8 1.8 1.818 1.854 V Line Regulation ∆V OUT I OUT = 10mA, 1.5V ≤ V IN -V OUT ≤ 10V 1 6 mV Load Regulation ∆V OUTV IN -V OUT = 2V , 10mA ≤ I OUT ≤ 1Α 1 10 mV Dropout V oltage∆V OUT = 1%, I OUT = 0.1Α 1.00 1.1 V ∆V OUT = 1%, I OUT = 0.5Α 1.08 1.18 V ∆V OUT = 1%, I OUT = 1.0Α1.15 1.25V Current Limit I LIMITV IN -V OUT = 2V 1.25 1.35 A Quiescent Current V IN =V OUT +1.25V5 10 mA Ripple Rejection f =120Hz, C OUT =22µF Tantalum, V IN -V OUT = 3V , I OUT =1A60 75 dB Temperature Stability 0.5 %Long -Term Stability T A =125o C, 1000hrs 0.3 %RMS Output Noise (% of V OUT )T A =25o C, 10Hz ≤ f ≤ 10kHz 0.003 %Thermal Resistance, Junction to CaseθJCSOT-223SOT-89-3TO-252-2TO-220-3TO-263-315 75 10 4.5 4 o C/WThermal Shutdown Junction Temperature150 o C Thermal Shutdown Hysteresis25oCOperating Conditions: V IN ≤10V , T J =25o C, unless otherwise specified.AZ1117-1.8V Electrical CharacteristicsElectrical Characteristics (Continued)CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ111711Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedParameter Symbol Conditions Min Typ MaxUnitOutput V oltage V OUT I OUT = 10m Α, V IN = 4.5V10mA ≤ I OUT ≤ 1A, 3.9V ≤ V IN ≤ 10V 2.475 2.4502.5 2.5 2.525 2.550 V Line Regulation ∆V OUT I OUT = 10mA, 1.5V ≤ V IN -V OUT ≤ 10V 1 6 mV Load Regulation ∆V OUTV IN -V OUT = 2V , 10mA ≤ I OUT ≤ 1Α 1 10 mV Dropout V oltage∆V OUT = 1%, I OUT = 0.1Α 1.00 1.1 V ∆V OUT = 1%, I OUT = 0.5Α 1.08 1.18 V ∆V OUT = 1%, I OUT = 1.0Α1.15 1.25V Current Limit I LIMITV IN -V OUT = 2V 1.25 1.35 A Quiescent Current V IN =V OUT +1.25V5 10 mA Ripple Rejection f =120Hz, C OUT =22µF Tantalum, V IN -V OUT = 3V , I OUT =1A60 75 dB Temperature Stability 0.5 %Long -Term Stability T A =125o C, 1000hrs 0.3 %RMS Output Noise (% of V OUT )T A =25o C, 10Hz ≤ f ≤ 10kHz 0.003 %Thermal Resistance, Junction to CaseθJCSOT-223SOT-89-3TO-252-2TO-220-3TO-263-315 75 10 4.5 4 o C/WThermal Shutdown Junction Temperature150 o C Thermal Shutdown Hysteresis25oCOperating Conditions: V IN ≤10V , T J =25o C, unless otherwise specified.AZ1117-2.5V Electrical CharacteristicsElectrical Characteristics (Continued)CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ111712Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedParameter Symbol Conditions Min Typ MaxUnitOutput V oltage V OUT I OUT = 10mA , V IN = 4.85V10mA ≤ I OUT ≤ 1A, 4.25V ≤ V IN ≤ 10V 2.822 2.7932.852.85 2.8782.907 V Line Regulation ∆V OUT I OUT = 10mA, 1.5V ≤ V IN -V OUT ≤ 10V 1 6 mV Load Regulation ∆V OUTV IN -V OUT = 2V , 10mA ≤ I OUT ≤1Α 1 10 mV Dropout V oltage∆V REF = 1%, I OUT = 0.1A 1.00 1.1 V ∆V REF = 1%, I OUT = 0.5A 1.08 1.18 V ∆V REF = 1%, I OUT = 1.0A1.15 1.25V Current Limit I LIMITV IN -V OUT = 2V 1.25 1.35 A Quiescent Current V IN =V OUT +1.25V5 10 mA Ripple Rejection f =120Hz, C OUT =22µF Tantalum, V IN -V OUT = 3V , I OUT =1A60 75 dB Temperature Stability 0.5 %Long -Term Stability T A =125o C, 1000hrs 0.3 %RMS Output Noise (% of V OUT )T A =25o C, 10Hz ≤ f ≤ 10kHz 0.003 %Thermal Resistance, Junction to CaseθJCSOT-223SOT-89-3TO-252-2TO-220-3TO-263-315 75 10 4.5 4 o C/WThermal Shutdown Junction Temperature150 o C Thermal Shutdown Hysteresis25o CAZ1117-2.85V Electrical CharacteristicsOperating Conditions: V IN ≤10V , T J =25o C, unless otherwise specified.Electrical Characteristics (Continued)CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ111713Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedParameter Symbol Conditions Min TypMaxUnitOutput V oltage V OUT I OUT = 10m Α, V IN = 5.0V10mA ≤ I OUT ≤ 1A, 4.75V ≤ V IN ≤ 10V 3.267 3.2353.3 3.3 3.3333.365 V Line Regulation ∆V OUT I OUT = 10mA, 1.5V ≤ V IN -V OUT ≤ 10V 1 6 mV Load Regulation ∆V OUTV IN -V OUT = 2V , 10mA ≤ I OUT ≤ 1Α 1 10 mV Dropout V oltage∆V OUT = 1%, I OUT = 0.1Α 1.00 1.1 V ∆V OUT = 1%, I OUT = 0.5Α 1.08 1.18 V ∆V OUT = 1%, I OUT = 1.0Α1.15 1.25V Current Limit I LIMITV IN -V OUT = 2V 1.25 1.35 A Quiescent Current V IN =V OUT +1.25V5 10 mA Ripple Rejection f =120Hz, C OUT =22µF Tantalum, V IN -V OUT = 3V , I OUT =1A60 75 dB Temperature Stability 0.5 %Long -Term Stability T A =125o C, 1000hrs 0.3 %RMS Output Noise (% of V OUT )T A =25o C, 10Hz ≤ f ≤ 10kHz 0.003 %Thermal Resistance, Junction to CaseθJCSOT-223SOT-89-3TO-252-2TO-220-3TO-263-315 75 10 4.5 4 o C/WThermal Shutdown Junction Temperature150 o C Thermal Shutdown Hysteresis25oCOperating Conditions: V IN ≤10V , T J =25o C, unless otherwise specified.AZ1117-3.3V Electrical CharacteristicsElectrical Characteristics (Continued)CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ111714Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedParameter Symbol Conditions Min Typ MaxUnitOutput V oltage V OUT I OUT = 10m Α, V IN = 7.0V10mA ≤ I OUT ≤ 1A, 6.5V ≤ V IN ≤ 12V 4.950 4.9005.0 5.0 5.050 5.100 V Line Regulation ∆V OUT I OUT = 10mA, 1.5V ≤ V IN -V OUT ≤ 10V 1 10 mV Load Regulation ∆V OUTV IN -V OUT = 2V , 10mA ≤ I OUT ≤ 1Α 1 15 mV Dropout V oltage∆V OUT = 1%, I OUT = 0.1Α 1.00 1.1 V ∆V OUT = 1%, I OUT = 0.5Α 1.08 1.18 V ∆V OUT = 1%, I OUT = 1.0Α1.15 1.25V Current Limit I LIMITV IN -V OUT = 2V 1.25 1.35 A Quiescent Current V IN =V OUT +1.25V5 10 mA Ripple Rejection f =120Hz, C OUT =22µF Tantalum, V IN -V OUT = 3V , I OUT =1A60 75 dB Temperature Stability 0.5 %Long -Term Stability T A =125o C, 1000hrs 0.3 %RMS Output Noise (% of V OUT )T A =25o C, 10Hz ≤ f ≤ 10kHz 0.003 %Thermal Resistance, Junction to CaseθJCSOT-223SOT-89-3TO-252-2TO-220-3TO-263-315 75 10 4.5 4 o C/WThermal Shutdown Junction Temperature150 o C Thermal Shutdown Hysteresis25oCOperating Conditions: V IN ≤10V , T J =25o C, unless otherwise specified.AZ1117-5.0V Electrical CharacteristicsElectrical Characteristics (Continued)CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ111715Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedTypical Performance CharacteristicsFigure 5. Load Regulation vs. Junction TemperatureFigure 6. Reference Voltage vs. Junction TemperatureFigure 7. Output Voltage vs. Junction TemperatureFigure 4. Dropout Voltage vs. Output CurrentCURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ111716Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedFigure 8. Minimum Load Current vs. Junction TemperatureFigure 10. Short-Circuit Current vs. Junction TemperatureFigure 11. Maximum Power DissipationTypical Performance Characteristics (Continued)Figure 9. Adjust Pin Current vs. TemperatureCURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ111717Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedTypical Performance Characteristics (Continued)Figure 14. Ripple Rejection vs. FrequencyFigure 12. Line Transient ResponseFigure 13. Load Transient ResponseLine_transient_responseV IN =4.8V, V OUT =3.33V , C IN =1µ,C OUT =10µ (TAN)V OUTV IN =5.8V V IN =4.8VV IN =4.8V, V OUT =3.33V , C IN =C OUT =10µ (TAN)preload=0.1ALine_transient_responseV OUTI OUT =0.5AI OUT =0.1ACURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ111718Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedTypical ApplicationsFigure 15. Typical Applications of AZ1117CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ111719Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedUnit: mm(inch)Mechanical DimensionsSOT- 223CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ111720Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedSOT-89-3Mechanical Dimensions (Continued)Unit: mm(inch)CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ111721Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedTO-252-2Mechanical Dimensions (Continued)Unit: mm(inch)CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ111722Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedTO-220-3Mechanical Dimensions (Continued)Unit: mm(inch)CURRENT MODE PWM CONTROLLER AZ2842/3/4/5 1A LOW DROPOUT LINEAR REGULATOR AZ111723Oct. 2005 Rev. 1. 7BCD Semiconductor Manufacturing LimitedMechanical Dimensions (Continued)TO-263-3Unit: mm(inch)IMPORTANT NOTICEBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others.- Wafer FabShanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008BCD Semiconductor Manufacturing LimitedMAIN SITEREGIONAL SALES OFFICEShenzhen OfficeShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166Taiwan OfficeBCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, TaiwanTel: +886-2-2656 2808, Fax: +886-2-2656 2806USA OfficeBCD Semiconductor Corporation3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.ATel: +1-408-988 6388, Fax: +1-408-988 6386- IC Design GroupAdvanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673BCD Semiconductor Manufacturing Limited。

调查问卷统计分析工具(人力资源)

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1278348-1中文资料

1278348-1 Product DetailsHome | Customer Support | Suppliers | Site Map | Privacy Policy | Browser Support© 2008 Tyco Electronics Corporation All Rights Reserved Searc hProducts Documentation Resources My Account Customer SupportHome > Products > By Type > Single Fiber/Duplex Connectors > Product Feature Selector > Product Details1278348-1Active SC ConnectorsNot EU RoHS or ELV Compliant (Find RoHS CompliantAlternates)Product Highlights:l Coupling Receptaclel Multimode, Singlemodel Fiber Optic Connector Type = Simplexl Zinc Diecast Housing Materiall Metal Alignment Sleeve MaterialView all Features | Find SimilarProductsCheck Pricing &AvailabilitySearch for ToolingProduct FeatureSelectorContact Us AboutThis ProductQuick LinksDocumentation & Additional InformationProduct Drawings:l ASSEMBLY, RECEPTACLE, SC/SC SIMPLEX, DIECAST HOUSING(PDF, English)Catalog Pages/Data Sheets:l None AvailableProduct Specifications:l None AvailableApplication Specifications:l None AvailableInstruction Sheets:l None AvailableCAD Files:l None AvailableList all Documents Additional Information:l Product Line InformationRelated Products:l ToolingProduct Features (Please use the Product Drawing for all design activity)Product Type Features:l Product Type = Coupling Receptaclel Fiber Optic Connector Type = Simplexl Protective Cover = WithMechanical Attachment:l Panel Attachment Method = Clip Retention,Flangedl AMP Logo = WithTermination Related Features:l Mode = Multimode, SinglemodeBody Related Features:l Alignment Sleeve Material = Metal Contact Related Features:l EMI Shielded Flange = NoHousing Related Features:l Housing Material = Zinc DiecastIndustry Standards:l RoHS/ELV Compliance = Not ELV/RoHScompliantl Lead Free Solder Processes = Not relevant forlead free processPackaging Related Features:l Packaging Method = IndividualOther:l Brand = AMPProvide Website Feedback | Contact Customer Support。

数独入门-儿童数独游戏第1级-唯一法4X4

數獨入門教材第一級---4x4 唯一法可解題
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42 13 13 42
24 31 31 24
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43 12 21 34
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31 42 24 31
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24 31 13 42
41 23 32 14
69、
3
12
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4
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數獨入門教材第一級---4x4 唯一法可解題
12
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31 42 42 31
13 24 24 13
5、
41 32 32 41
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5103310-1资料

5103310-1 Product DetailsHome | Customer Support | Suppliers | Site Map | Privacy Policy | Browser Support© 2008 Tyco Electronics Corporation All Rights Reserved SearchProducts Documentation Resources My Account Customer SupportHome > Products > By Type > Ribbon and Flat Flex Wire Connectors -Ribbon Cable > Product Feature Selector > Product Details5103310-1Active Pin and Pinless Headers (AMP-LATCH)Always EU RoHS/ELV Compliant (Statement of Compliance)Product Highlights:?Connector Type = Pin Headers?Low Profile?Number of Positions = 10? 2.54 x 2.54 mm Centerline, Matrix?PCB Mount Angle = Right AngleView all Features | Find SimilarProductsCheck Pricing &AvailabilitySearch for ToolingView MatingProducts (13)Product FeatureSelectorContact Us AboutThis ProductQuick LinksDocumentation & Additional InformationProduct Drawings:?HEADER ASSY, RIGHT ANGLE, LOW PROFILE, AMP-LATCH(PDF, English)Catalog Pages/Data Sheets:?None AvailableProduct Specifications:?AMP-LATCH* and IDC Header Connectors, .100 x .100 In...(PDF, English)Application Specifications:?None AvailableInstruction Sheets:?None AvailableCAD Files: (CAD Format & Compression Information)?2D Drawing (DXF, Version B)?3D Model (IGES, Version B)?3D Model (STEP, Version B)List all Documents Additional Information:?Product Line InformationRelated Products:?Tooling?Mating Products (13)Product Features (Please use the Product Drawing for all design activity)Product Type Features:?Connector Type = Pin Headers?Profile = Low?Number of Positions = 10?PCB Mount Angle = Right Angle?PCB Retention Feature = No?Mating Polarization Method = Center, DualPolarizing Bar?Mating Connector Lock = Without?Housing Style = 4-Sided?Ejection Latches = Without?Post Size (mm [in]) = 0.64 [.025]?Shrouded = Yes?Mating Polarization = With?Shrouded End Dimension (mm [in]) = 3.81[0.150]Electrical Characteristics:?Current Rating (Amps.) = 1?Insulation Resistance (M?) = 5,000Termination Related Features:?Termination (Solder) Post Length (mm [in]) =3.43 [0.135]?Solder Tail Contact Plating = Tin over NickelBody Related Features:?Centerline, Matrix (mm [in]) = 2.54 x 2.54[.100 x .100]?Daisy Chain = With Contact Related Features:?Contact Mating Area Plating Material = Gold(15) over Nickel, Gold Flash over PalladiumNickel?Contact Shape = Square?Contact Material = Copper Alloy?Approved Standards = UL E28476, CSA LR7189 Housing Related Features:?Housing Material = Thermoplastic?Housing Flammability Rating = UL 94V-0?Housing Color = BlackIndustry Standards:?RoHS/ELV Compliance = RoHS compliant, ELVcompliant?Lead Free Solder Processes = Wave soldercapable to 240°C, Wave solder capable to 260°C, Wave solder capable to 265°C?RoHS/ELV Compliance History = Always wasRoHS compliantConditions for Usage:?Temperature Rating = Standard?Operating Temperature (°C) = -65 –+105 Other:?Brand = AMPProvide Website Feedback | Contact Customer Support。

管网平差计算

管段 1—2 2—5 1—4 4—5 2—5 2—3 5—6 3—6 4—5 5—9 4—8 8—9 5—9 Ⅳ
消防校核第一次校正环状网平差计算表
管长管径第一次校正后比阻a 摩阻S h(m) L(m) d(mm 流量q(L/s) 685 600 0.026 17.8237 296.82 1.57 630 600 0.026 16.3926 -385.71 -2.44 630 500 0.0684 43.0857 236.49 2.41 685 250 2.752 1885.12 -27.92 -1.47 △h1=0.07m 0.07 630 600 0.026 16.3926 385.71 2.44 470 700 0.0115 5.405 -547.18 -1.62 470 200 9.029 4243.63 14.92 0.94 630 700 0.0115 7.245 -487.82 -1.72 △h2=0.04m 0.04 685 250 2.752 1885.12 27.92 1.47 920 450 0.1195 109.94 -196.97 -4.27 920 500 0.0684 62.9188 185.88 2.17 685 300 1.025 702.125 20.53 0.30 △h3=-0.33m -0.33 920 450 0.1195 109.94 196.97 4.27 ︱sq︱ 5.29 6.32 10.19 52.63 74.43 6.32 2.96 63.31 3.53 76.13 52.63 21.65 11.70 14.41 100.39 21.65
表十五
环号管段
第六次校正环状网平差计算表
比阻a 摩阻S 第六次校正后流量q(L/s) h(m) ︱sq︱

GSO海湾认证

Lead-Acid Starter Batteries Used for Motor Cars & Internal Combustion Engines
Methods of Test for Lead-Acid Starter Batteries Used for Motor Cars & Internal Combustion Engines
Motor Vehicles - Allowable Limits of Pollutants Emitted to the Atmosphere from Heavy Duty Diesel Engined Vehicles
Motor Vehicles - Methods of Testing for Pollutants Emitted from Heavy Duty Diesel Engined Vehicles – Part 1: Determination of
2006
72
1781
2006
73
1782
2008
74
1783
2006
75
1784
2006
GSO ISO
76
1585
2008
序号
SASO No.
1
380*
SASO/C
ITC RI
054/200
2
7*
3
1323*
Additional requirements for certificatio
Technical Regulation 英文
Motor Vehicles - Safety Requirements for Maintenance and Repair Workshop

逆序数n阶行列式的定义

Th2：任意一个排列经过一个对换后奇偶性改变。如：24153 对换（4，5）得 25143，从一个偶排列变为一个奇排列。
Th3： n 个数码（n>1）共有
n! 个 n 级排列，其中奇偶排
列各占一半。如：123，132，231，213，312，321
§2、n 阶行列式定义一、二阶行列式
a11 a12
a1 j1 a 2 j2 a 3 j3
2， 3的标准排列；行标：第一个下标 123是1，列标：第二个下标 j j j 是1， 2， 3的某个排列， 1 2 3 这样的排列共有 6 3!种，对应 6 3!项。
2）符号：3 项正 3 项负：即
(1)
N ( j1 j2 j3 )
(i, j 1,2,..., n)
，组成记号
a11 a 21 ... a n1
a12 a 22 ... an 2
... a1n ... a 2 n ... ... ... a nn
n 阶行列式，记Dn ，称为（其中横
排称为行，纵排称为列）。
n 阶行列式表示这样项的代数和： 1）、项数：n 个数字所有排列共n! 个，共有n! 项，每一项是位于不同行不同列 n 个元素的乘积，且每一项可表示为
a11a23a32 a12 a21a33 a13a22 a31
＝ (1)
N ( j1 j2 j3 )
a1 j1 a2 j2 a3 j3 称为三阶行列式，记 D3
分析三阶行列式的结构： 1）项数：共 6＝3！项，每一项都是位于不同行不同列的三个元素的乘积，且每一项可以表示为
a1 j1 a 2 j2 ...a njn

贵州 - 安顺目前已开通的手机号段

贵州 - 安顺目前已开通的手机号段130联通号段 (共10个)计算得出安顺联通130号段共有超过10万个手机号(计算方式：号段数*万门 10*10000=100000)• 1300789• 1301708• 1301709• 1301744• 1302789• 1303558• 1304950• 1304951• 1308690• 1309853131联通号段 (共11个)计算得出安顺联通131号段共有超过11万个手机号(计算方式：号段数*万门 11*10000=110000)• 1311640• 1311641• 1311853• 1312363• 1312463• 1315813• 1315823• 1315831• 1315833• 1319513• 1319523132联通号段 (共4个)计算得出安顺联通132号段共有超过4万个手机号(计算方式：号段数*万门 4*10000=40000)• 1320850• 1320853• 1323850• 1323851133电信CDMA手机号码 (共13个)计算得出安顺电信133号段共有超过13万个手机号(计算方式：号段数*万门 13*10000=130000)• 1330853• 1331043• 1331073• 1331240• 1331241• 1332963• 1333963• 1336853• 1336863• 1337853• 1338513• 1338553• 1339853134移动号段 (共0个)计算得出安顺移动134号段共有超过0万个手机号(计算方式：号段数*万门 0*10000=00000)135移动电话号码号段 (共12个)计算得出安顺移动135号段共有超过12万个手机号(计算方式：号段数*万门 12*10000=120000)• 1350853• 1351853• 1359530• 1359531• 1359532• 1359533• 1359534• 1359535• 1359536• 1359537• 1359538• 1359539136移动号段 (共10个)计算得出安顺移动136号段共有超过10万个手机号(计算方式：号段数*万门 10*10000=100000)• 1361853• 1363853• 1364853• 1365853• 1366853• 1367853• 1368853• 1369850• 1369851• 1369852137移动手机号码号段 (共14个)计算得出安顺移动137号段共有超过14万个手机号(计算方式：号段数*万门 14*10000=140000)• 1370853• 1372153• 1372154• 1372155• 1376530• 1376531• 1376532• 1376533• 1376534• 1376535• 1376536• 1376537• 1376538• 1376539138移动号段 (共10个)计算得出安顺移动138号段共有超过10万个手机号(计算方式：号段数*万门 10*10000=100000)• 1388533• 1388534• 1388535• 1388536• 1388537• 1388538• 1388539139移动号段 (共10个)计算得出安顺移动139号段共有超过10万个手机号(计算方式：号段数*万门 10*10000=100000)• 1390853• 1398443• 1398530• 1398531• 1398532• 1398570• 1398571• 1398572• 1398573• 1398574150移动号段 (共1个)计算得出安顺移动150号段共有超过1万个手机号(计算方式：号段数*万门 1*10000=10000)• 1500853151移动号段 (共21个)计算得出安顺移动151号段共有超过21万个手机号(计算方式：号段数*万门 21*10000=210000)• 1510853• 1511775• 1511776• 1511777• 1511778• 1512132• 1512133• 1512134• 1518535• 1518536• 1518537• 1518538• 1518539• 1518540• 1518541• 1518542• 1518543• 1518544152移动号段 (共1个)计算得出安顺移动152号段共有超过1万个手机号(计算方式：号段数*万门 1*10000=10000)• 1520853153电信CDMA (共14个)计算得出安顺电信153号段共有超过14万个手机号(计算方式：号段数*万门 14*10000=140000)• 1530853• 1532903• 1532913• 1532923• 1532933• 1532943• 1532953• 1532963• 1532973• 1532983• 1533853• 1533863• 1533953• 1534853155联通号段 (共7个)计算得出安顺联通155号段共有超过7万个手机号(计算方式：号段数*万门 7*10000=70000)• 1551930• 1558533• 1558536• 1559780• 1559919• 1559930• 1559931156联通电话号码号段 (共9个)计算得出安顺联通156号段共有超过9万个手机号(计算方式：号段数*万门 9*10000=90000)• 1560853• 1567093• 1568535• 1568536• 1568537• 1568538• 1568539• 1568543• 1569273157移动号段 (共2个)计算得出安顺移动157号段共有超过2万个手机号(计算方式：号段数*万门 2*10000=20000)• 1571853• 1571863158移动手机号码号段 (共11个)计算得出安顺移动158号段共有超过11万个手机号(计算方式：号段数*万门 11*10000=110000)• 1580853• 1587015• 1587016• 1588572• 1588573• 1588574• 1588575• 1588576159移动号段 (共7个)计算得出安顺移动159号段共有超过7万个手机号(计算方式：号段数*万门 7*10000=70000)• 1590253• 1590254• 1590263• 1590264• 1590853• 1598530• 1598531186联通WCDMA (共7个)计算得出安顺联通186号段共有超过7万个手机号(计算方式：号段数*万门 7*10000=70000)• 1860853• 1868535• 1868536• 1868537• 1868538• 1868539• 1868543187移动TD-SCDMA (共29个)计算得出安顺移动187号段共有超过29万个手机号(计算方式：号段数*万门 29*10000=290000)• 1870853• 1872270• 1872271• 1872272• 1872276• 1872277• 1872278• 1872279• 1874470• 1874471• 1874472• 1874473• 1874474• 1878530• 1878531• 1878532• 1878533• 1878534• 1878535• 1878536• 1878537• 1878538• 1878539• 1878865• 1878866• 1878867188移动TD-SCDMA可挑选号码的号段 (共11个)计算得出安顺移动188号段共有超过11万个手机号(计算方式：号段数*万门 11*10000=110000)• 1880853• 1888530• 1888531• 1888532• 1888533• 1888534• 1888535• 1888539189电信天翼 (共10个)计算得出安顺电信189号段共有超过10万个手机号(计算方式：号段数*万门 10*10000=100000)• 1890853• 1898530• 1898531• 1898532• 1898543• 1898570• 1898571• 1898572• 1898573• 1898574。