NE85630-T1-A中文资料

NE85600 00 (CHIP)
NE85618 2SC5011
18
NE85619 2SC5006
19
NE85630 2SC4226
30
NE85632 2SC3355
32
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT
Gain Bandwidth Product at
VCE = 10 V, IC = 20 mA
GHz
7.0
6.5
6.5
VCE = 3 V, IC = 7 mA
GHz
3.0 4.5
4.5
NF
Noise Figure at
VCE = 10 V, IC = 7 mA, f = 1 GHz
dB
1.1
1.4
50 120 300
80 120 160 40 110 250
ICBO Collector Cutoff Current at VCB = 15 V, IE = 0 mA
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA
μA
1.0
1.0
1.0
1.0
in
permanent damage.
2. Maximum TJ for the NE85600 and NE85635 is 200°C.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE85633 AND NE85635 TOTAL POWER DISSIPATION vs.
t h i s f o r n e w f o r offers excellent performance and reliability at low cost. This is
achieved by NEC's titanium/platinum/gold metallization sys-
f = 2 GHz
GA
Associated Gain at
VCE = 10 V, IC = 7 mA, f = 1 GHz
f = 2 GHz
GHz
dB dB
dB dB
|S21E|2 Insertion Power Gain at
VCE = 10 V, IC = 20 mA, f = 1 GHz
dB
f = 2 GHz
Date Published: June 28, 2005
元器件交易网
NE856 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
NE85634 2SC3357
34
MIN TYP MAX
NE85635 2SC3603
35
MIN TYP MAX
NE85639/39R 2SC4093 39
MIN TYP MAX
7.0
6.5
1.4 2.0
1.4
9
7.0 2.1 3.4 10
9.0 1.5 2.1
13.5 8.5
11.5
9.5
13
79
PT
Total Power Dissipation
mW
700
150
100
150
600
RTH (J-A) Thermal Resistance (J-A)
°C/W
833
1000
833
210
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBER
COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR
TO BASE VOLTAGE
5.0
3.0
2.0
1.0
NE85634
0.7
NE85632/
0.5
33
NE85635 0.3
0.2
0.1
1
2 3 5 7 10
20 30 50
Collector to Base Voltage, VCB (V)
39R (SOT 143R STYLE)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series
Noise Figure, NF (dB) Maximum Associated Байду номын сангаасain, Maximum Stable Gain,
Associated Gain, MAG, MSG, GA (dB)
1.5
1.0 0.4 0.5
1.0
2
3
Frequency, f (GHz)
45
39 (SOT 143 STYLE)
7
50 120 300 50 120 300 50 120 300 50 120 300
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.55 1.0 200 625
0.65 1.0 20004 62.54
0.5 1.0 580 590
0.5 0.9 200 500
Notes: 1. Electronic Industrial Association of Japan. 2. Pulse width ≤ 350 μs, duty cycle ≤ 2% pulsed. 3. Cre measurement employs a three terminal capacitance bridge incorporating a
元器件交易网
NPN SILICON RF TRANSISTOR
NE856 SERIES
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
• LOW NOISE FIGURE: 1.1 dB at 1 GHz
DC Forward Current Gain, hFE
1.4
1.3
1.4
VCE = 10 V, IC = 7 mA, f = 2 GHz
dB
2.1
2.1
2.2
2.2
GA
Associated Gain at
VCE = 10 V, IC = 7 mA, f = 1 GHz
dB
13
12.5
12
10
f = 2 GHz
dB
10
7
6.5
6
|S21E|2 Insertion Power Gain at
dB
hFE
Forward Current Gain2 at
VCE = 10 V, IC = 20 mA
ICBO
Collector Cutoff Current
at VCB = 15 V, IE = 0 mA
μA
IEBO
Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
TJ
Junction Temperature
TSTG
Storage Temperature
UNITS V V V mA °C °C
RATINGS 20 12 3.0 100 1502
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
4.0
20
MSG
18 (SOT 343 STYLE)
35 (MICRO-X)
34 (SOT 89 STYLE)
19 (3 PIN ULTRA SUPER MINI MOLD)
3.5
GA
15
MAG
3.0
10
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
2.5
5
NFMIN 2.0
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
VCBO
Collector to Base Voltage
VCEO Collector to Emitter Voltage
VEBO
Emitter to Base Voltage
IC
Collector Current
guard circuit. The emitter terminal shall be connected to the guard terminal. 4. With 2.5 cm2 x 0.7 mm ceramic substrate (infinite heatsink).
元器件交易网
PACKAGE OUTLINE
SYMBOLS PARAMETERS AND CONDITIONS UNITS
fT
Gain Bandwidth Product at
VCE = 10 V, IC = 20 mA
NF
Noise Figure at
VCE = 10 V, IC = 7 mA, f = 1 GHz
μA
Cre
Feedback Capacitance3 at
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
PT
Total Power Dissipation
mW
RTH (J-A) Thermal Resistance (J to A)
°C/W
NE85633 2SC3356
33
MIN TYP MAX
1.0
μA
1.0
1.0
1.0
1.0
1.0
Cre
Feedback Capacitance3 at
VCB = 3 V, IE = 0 mA, f = 1 MHz
pF
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
0.5 1.0
0.5 0.9
0.7 1.5
0.7 1.5
0.65 1.0
several low cost plastic package styles.
00 (CHIP) 32 (TO-92)
Pdleetaasiel s : NE85600 N E 8 5 6 3 5 NOISE FIGURE AND GAIN
vs. FREQUENCY
N E 8 5 6 3 9 R VCC = 10 V, IC 7 mA
VCE = 10 V, IC = 20 mA, f = 1 GHz
dB
11 13
12
12
9.5
f = 2 GHz dB 7 9
7
6
hFE
Forward Current Gain2 at
VCE = 10 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
50 120 300 50 120 300
E B
• HIGH COLLECTOR CURRENT: 100 mA
• HIGH RELIABILITY METALLIZATION
• LOW COST
P L E A S E N O T E : p a r t n u m b enrost DESCRIPTION T h e f o l l o wdi nagt a s h e e t a r ed e s i g n . NEC's NE856 series of NPN epitaxial silicon transistors is
f r o m e n d e d o f f i c e tem and their direct nitride passivated base surface process.
The NE856 series is available in chip form and a Micro-x
r e c o m m c a l l s a l e s package for high frequency applications. It is also available in
AMBIENT TEMPERATURE
400
Total Power Dissipation, PT (mW)
300 NE85635
200
NE85633 100
0
0
50
100
150
200
Ambient Temperature, TA (°C)
Collector to Base Capacitance, COB (pF)