IRG4BC20KD中文资料
ERA-4SM中文资料(mini circuits)中文数据手册「EasyDatasheet - 矽搜」
14.4 14.2 13.0 12.0 11.3 .003 .0025 .0031 .0042 .0051 35 30 21 21 35 21 21 16 23 17.5 17.3 16.1 14 11.7 17.8 16.5
36.1 35 30.4 25 4 4.2 4.2 4.5 80 65 4.6 -2.9 10.4 196
4
GHz
15
dB
13.6
12.2
.006
dB/°C
.006
.006
.008
.01
dB
dB
dB dBm
dBm dBm
5
dB
5.2
5.2
5.5
psec
mA
4.9
V
mV/°C
mV/mA
°C/W
绝对最大额定值
参数
额定值
工作温度 储存温度 工作电流 功耗 输入功率
-45°C至85°C -65℃至150℃
85mA 417mW 20 dBm的
RF IN
RF-OUT and DC-IN
GROUND
RF-OUT and DC-IN 3
4 GND
GND 2
1 RF IN
功能
RF在
引脚数
1
RF-OUT和DC-IN
3
GND
2,4
描述
射频输入引脚.该引脚需要使用选择用于操作频率外部隔直流电容器.
RF输出和偏置引脚.直流电压出现在该引脚;因此一个DC阻断 电容器是必要正确操作. RF扼流圈需要喂DC偏置 无RF信号损失,由于偏置连接,如图中"推荐 应用电路". 连接到地面.通孔使用,如图中"建议布局PCB 设计",以减少为最佳性能接地路径电感.
DA204K中文资料
Diodes1/4Switching diodeDA221M / DA221 / DA204U / DA204K DA228U / DA228K / UMR12Nz Applications Bias circuitsProtection circuitsz Features1) Three types of packages are available. (VMD3, EMD3, UMD3, SMD3)2) Two diode elements are connected in series (V F × 2) per circuit.z ConstructionSilicon epitaxial planarz Circuitz External dimensions (Unit : mm)Diodes2/4z MarkingUMD3DA204UDA228U UMD6UMR12N−−R12SMD3DA204KDA228KK BUKBU EMD3DA221K−−VMD3DA221MK−−z Absolute maximum ratings (T a=25°C)Type V RM (V)V R (V)I FM (mA)I O (mA)I surge (mA)(1µs)(TOTAL)Pd(mW)Tj(°C)Tstg(°C)DA2212020200100300150150−55 to +150DA221M 2020200100300150150−55 to +150DA204U 2020200100300200150−55 to +150DA228K 8080200100300200150−55 to +150UMR12N8080200100300200150−55 to +150−55 to +150DA228U 8080200100300200150−55 to +150DA204K 2020200100300200150Peak reverse voltage Peak forward current Mean rectifying current Surge current Power dissipation Junction temperatureStoragetemperature DC reverse voltagez Electrical characteristics (T a=25°C)TypeForward voltageV F (V)Max.I R (µA)Max.Reverse current Fig.Cond.Cond.I F (mA)V R (V)DA221 1.0100.115 1 to 4DA221M 1.0100.115 1 to 45 to 9UMR12N1.21000.180DA204U 1.0100.115 1 to 40.1DA228U 1.210080 5 to 90.11.01015DA204K 1 to 40.1DA228K 1.210080 5 to 9Diodes3/4z Electrical characteristic curves (T a=25°C) (DA221, DA204U, DA204K) …Fig.1 to 4T a =125°CD1D1+D20.40.8 1.2 1.6 2.0 2.41001011.00.0175°C25°C−25°C125°C75°C25°C−25°CF O R W A R D C U R R E N T : I F (m A )FORWARD VOLTAGE : V F (V)Fig.1 Forward characteristicsF O R W A R D C U R R E N T : I F (m A )FORWARD VOLTAGE : V F (V)Fig.2 Forward characteristicsD2 125°CD1 100°C D2 100°CD1 75°C D2 75°C51015200.010.1110100D1 Ta=125°CR E V E R S E CU R R E N T : I R (n A )REVERSE VOLTAGE : V R (V)Fig.3 Reverse characteristics12510C A P A C I T A N C E B E T W E E N T E R M I N A L S : C T (p F )REVERSE VOLTAGE : V R (V)Fig.4 Capacitance between terminals characteristicsDiodes4/4(DA228U, DA228K, UMR12N) …Fig.5 to 9F O R W A R D C U R R E N T : I F (m A )FORWARD VOLTAGE : V F (V)Fig.5 Forward characteristics F O R W A R D C U R R E N T : I F(m A )FORWARD VOLTAGE : V F (V)Fig.6 Forward characteristics R E V E R S E C U R R EN T : I R (n A )REVERSE VOLTAGE : V R (V)Fig.7 Reverse characteristicsR E V E R S E C U R RE N T : I R (n A )REVERSE VOLTAGE : V R (V)Fig.8 Reverse characteristics110C A P A C I T A N C E B E T W E E N T E R M I N A L S : C T (p F )REVERSE VOLTAGE : V R (V)Fig.9 Capacitance between terminals characteristicsAppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.0。
RCV420JPG4中文资料
±15 3
80
MAX 0.15 0.25 0.002
75.75 ±40
1
0.075 0.15
10.01
±18 4
+70 +85 +85
UNITS
V/mA % of span % of span
ppm/°C % of span
V mA Ω mA pF
Ω kΩ V dB dB dB
mV µV/°C
dB µV/mo
V+ 16 RCV420
常用二极管三极管参数
9月28日常用二极管参数整流二极管主要参数50V 100V 200V 300V 400V 500V 600V 800V 1000V1A 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N40071.5A 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 2A PS200 PS201 PS202 PS204 PS206 PS208 PS2093A 1N5400 1N5401 1N5402 1N5404 1N5405 1N5406 1N5407 1N5408 1N5409 稳压二极管主要参数型号最大功耗(mW) 稳定电压(V) 电流(mA) 代换型号国产稳压管日立稳压管最小值最大值新型号旧型号HZ4B2 500 3.8 4 5 2CW102 2CW21 4B2HZ4C1 500 4 4.2 5 2CW102 2CW21 4C1HZ6 500 5.5 5.8 5 2CW103 2CW21A 6B1HZ6A 500 5.2 5.7 5 2CW103 2CW21AHZ6C3 500 6 6.4 5 2CW104 2CW21B 6C3HZ7 500 6.9 7.2 5 2CW105 2CW21CHZ7A 500 6.3 6.9 5 2CW105 2CW21CHZ7B 500 6.7 7.3 5 2CW105 2CW21CHZ9A 500 7.7 8.5 5 2CW106 2CW21DHZ9CTA 500 8.9 9.7 5 2CW107 2CW21EHZ11 500 9.5 11.9 5 2CW109 2CW21GHZ12 500 11.6 14.3 5 2CW111 2CW21HHZ12B 500 12.4 13.4 5 2CW111 2CW21HHZ12B2 500 12.6 13.1 5 2CW111 2CW21H 12B2HZ18Y 500 16.5 18.5 5 2CW113 2CW21JHZ20-1 500 18.86 19.44 2 2CW114 2CW21KHZ27 500 27.2 28.6 2 2CW117 2CW21L 27-3HZT33-02 400 31 33.5 5 2CW119 2CW21MRD2.0E(B) 500 1.88 2.12 20 2CW100 2CW21P 2B1RD2.7E 400 2.5 2.93 20 2CW101 2CW21SRD3.9EL1 500 3.7 4 20 2CW102 2CW21 4B2RD5.6EN1 500 5.2 5.5 20 2CW103 2CW21A 6A1RD5.6EN3 500 5.6 5.9 20 2CW104 2CW21B 6B2RD5.6EL2 500 5.5 5.7 20 2CW103 2CW21A 6B1RD6.2E(B) 500 5.88 6.6 20 2CW104 2CW21BRD7.5E(B) 500 7 7.9 20 2CW105 2CW21CRD10EN3 500 9.7 10 20 2CW108 2CW21F 11A2RD11E(B) 500 10.1 11.8 15 2CW109 2CW21GRD12E 500 11.74 12.35 10 2CW110 2CW21H 12A1RD12F 1000 11.19 11.77 20 2CW109 2CW21GRD13EN1 500 12 12.7 10 2CW110 2CW21H 12A3RD15EL2 500 13.8 14.6 15 2CW112 2CW21J 12C3RD24E 400 22 25 10 2CW116 2CW21H 24-1RD24F 400 24 28 10 2CW117 2CW21LRD36EL1 500 32 34 15 2CW119 2CW21M 33-2RD57E 500 48 54 10 1DS55-1805Z5.1Y 500 4.94 5.2 2CW103 2CW21A 5C205Z5.6Z 500 5.61 5.91 2CW104 2CW21B 6B205Z6.2Y 500 5.96 6.27 41 2CW104 2CW21B 6C205Z7.5Y 500 7.07 7.45 34 2CW105 2CW21C05Z7.5Z 500 7.3 7.7 34 2CW105 2CW21C 7C205Z9.1Y 500 8.9 9.3 30 2CW107 2CW21E 9C105Z12 500 11.13 12.35 21 2CW110 2CW21H05Z12Z 500 12 12.6 20 2CW110 2CW21H 12A305Z13X 500 12.11 12.75 19 2CW110 2CW21H 12A305Z13Z 500 13.5 14.1 18 2CW111 2CW21H 12C205Z13Y 500 12.55 13.21 19 2CW111 2CW21H 12B205Z15 500 14.4 15 17 2CW112 2CW21J 15-205Z15Y 500 13.89 14.62 17 2CW111 2CW21H 12C305Z18 500 16.5 18.5 14 2CW113 2CW21J05Z18Y 500 16.82 17.7 14 2CW113 2CW21J 18-1EQA01-11B 500 10.1 11.8 15 2CW109 2CW21GEQA01-12Z 500 11.2 13.1 15 2CW110 2CW21HEQA02-07B 400 6.66 7.01 20 2CW105 2CW21C 7A3EQA02-25A 500 24 25.5 2CW116 2CW21L 24-3TVSQA106SB 500 5.88 6.6 20 2CW104 2CW21BTVSQA111SB 500 10.4 11.6 10 2CW109 2CW21GTVSQA111SE 500 11 11.5 10 2CW109 2CW21G 11C2MA1130 1000 12.4 14.1 5 2CW111 2CW21HMA1330 500 31 35 25 2CW120 2CW21NM4030 500 2.9 3 5 2CW101 2CW21SuPC574JAG 200 31 35 25 2CW120 2CW21NRIMV 135 160 ZDW59恒流二极管主要参数型号恒定电流(ma) 起始电压Us(V) 动态电阻(MΩ) 耐压分档(UHV) 2DH00 ≤0.05 〈0.5 ≥8 A:≥202DH01 0.1±0.05 〈0.8 ≥82DH02 0.2±0.05 〈1.5 ≥52DH03 0.3±0.05 〈1.5 ≥5 B:≥302DH04 0.4±0.05 〈2 ≥2.52DH05 0.5±0.05 〈2 ≥2.52DH06 0.6±0.05 〈2 ≥2.5 C:≥402DH07 0.7±0.05 〈2 ≥1.52DH08 0.8±0.05 〈3 ≥1.52DH09 0.9±0.05 〈3 ≥1 D:≥502DH1 1±0.05 〈3 ≥12DH2 2±0.05 〈3 ≥0.52DH3 3±0.05 〈3.5 ≥0.42DH4 4±0.05 〈3.5 ≥0.32DH5 5±0.05 〈4.5 ≥0.252DH6 6±0.05 〈4.5 ≥0.152DH7 7±0.05 〈5 ≥0.15变容二极管主要参型号电容量（工作电压）电容比率工作频率最小值最大值303B 3~5p(25V) 18p(3V) 〉6 1000MHz2AC1 2p(25V) 27p(3V) 〉7 50MHz2CC1 3.6p(25V) 20p(3V) 4~6 50MHz2CB14 3p(25V) 18~30p(3V) 5~7 50MHz2CC-32 2.5p(25V) 25p(3V) 4.5 〉800MHzISV-101 12p(10V) 32p(2.5V) 2.4 100MHzAM-109 30p(9V) 460p(1V) 15 AMBB-112 17p(6V) 12p(3V) 1.8 AMISV-149 30p(8V) 540p(1V) 18 AMS-153 2.3p(9V) 16p(2V) 7 〉600MHzMV-209 11p(9V) 33p(1.5V) 3 UHFKV-1236 30p(8V) 540p(1V) 20 AMKV-1310 43p(8V) 93p(2V) 2.3 〉100MHzIS149 30p(8V) 540p(1V) 18 AMS208 2.7p(9V) 17p(4V) 〉4.5 〉900MHzMV2105 6p(9V) 22p(4V) 2.5 UHFDB300 6.8p(25V) 18p(3V) 1.8 50MHzBB112 10p(25V) 180p(3V) 〉16 AM快恢复二极管主要参数国外型号Vr(V) If(A) Ifsm(A) VF(V) Trr(us) Ir(ua) 适用机型代用型号ES1A 400 0.75 30 2.5 1.5 10 日立三洋CN08EEU1 400 0.35 15 2.5 0.4 10 东芝三洋2CZ34HEU01A 600 0.35 15 2.5 0.4 10 三洋CF03-06EU2 400 1 15 1.4 0.3 10 三洋CFR10-04EU2Z 200 1 15 1.4 0.3 10 三洋CFR10-02EU3A 600 1.5 20 1.5 0.4 10 三洋CFR15-06RC2 600 1 20 1.5 0.4 10 松下CRR02-20RU3 800 1.5 20 1.5 0.4 10 三菱CRF15-06S5295G 400 0.5 30 2 0.4 10 东芝CFR05-04S5295J 600 0.5 30 1.5 0.4 10 东芝CFR05-06RGP10 600 1 30 1.3 0.4 10 胜利夏普CFR10-06RU2 600 1 20 1.5 0.4 10 松下胜利NEC CFR10-06 TVSC2406SM1-02FRA 200 0.8 35 1 0.4 10 东芝CFR08-02TVR06 400 0.6 25 1.4 0.3 10 NEC CFR06-04V09 400 0.8 35 1.6 0.4 10 日立胜利2CZ305V09C 200 0.8 35 1.6 0.4 10 日立CFR08-02V11 日立2CZ306IS2471 60 0.15 1 0.8 0.03 10 三菱IS2096IS1553 70 0.1 1 1.4 ---- 0.5 东芝IS1553IS1555 35 0.1 1 1.4 ---- 0.5 东芝IS15553JH61 600 3 60 1.5 0.2 10 东芝CFR30-0611:21 | 阅读评论(1) | 固定链接 | 电器维修资料常用三极管参数MPSA42 NPN 21E 电话视频放大300V 0.5A 0.625W MPSA92 PNP 21E 电话视频放大300V 0.5A 0.625WMPS2222A NPN 21 高频放大75V 0.6A 0.625W 300MHZ 9011 NPN EBC 高频放大50V 30mA 0.4W 150MHz9012 PNP 贴片低频放大50V 0.5A 0.625W9013 NPN EBC 低频放大50V 0.5A 0.625W9013 NPN 贴片低频放大50V0.5A0.625W9014 NPN EBC 低噪放大50V0.1A0.4W150MHZ9015 PNP EBC 低噪放大50V0.1A0.4W150MHZ9018 NPN EBC 高频放大30V50MA0.4W1GHZ8050 NPN EBC 高频放大40V1.5A1W100MHZ8550 PNP EBC 高频放大40V1.5A1W100MHZ2N2222 NPN 4A 高频放大60V0.8A0.5W25/200NSβ=452N2222A NPN 小铁高频放大75V0.6A0.625W300MHZ2N2369 NPN 4A 开关40V0.5A0.3W800MHZ2N2907 NPN 4A 通用60V0.6A0.4W26/70NSβ=2002N3055 NPN 12 功率放大100V15A115W2N3440 NPN 6 视放开关450V1A1W15MHZ2N3773 NPN 12 音频功放开关160V16A150W COP 2N6609 2N3904 NPN 21E 通用60V0.2Aβ=100-4002N3906 PNP 21E 通用40V0.2Aβ=100-4002N5401 PNP 21E 视频放大160V0.6A0.625W100MHZ2N5551 NPN 21E 视频放大160V0.6A0.625W100MHZ2N5685 NPN 12 音频功放开关60V50A300W2N6277 NPN 12 功放开关180V50A250W2N6609 PNP 12 音频功放开关160V15A150W COP 2N3773 2N6678 NPN 12 音频功放开关650V15A175W15MHZ2N6718 NPN 小铁音频功放开关100V2A2W50MHZ3DA87A NPN 6 视频放大100V0.1A1W3DG6A NPN 6 通用15V20mA0.1W100MHz3DG6B NPN 6 通用20V20mA0.1W150MHz3DG6C NPN 6 通用20V20mA0.1W250MHz3DG6D NPN 6 通用30V20mA0.1W150MHz3DG12C NPN 7 通用45V0.3A0.7W200MHz3DK2B NPN 7 开关30V30mA0.2W3DK4B NPN 7 开关40V0.8A0.7W3DK7C NPN 7 开关25V50mA0.3W3DD15D NPN 12 电源开关300V5A50W3DD102C NPN 12 电源开关300V5A50W3522V 5.2V稳压管录像机用A634 PNP 28E 音频功放开关40V2A10WA708 PNP 6 NF/S 80V0.7A0.8WA715C PNP 29 音频功放开关35V2.5A10W160MHZA733 PNP 21 通用50V0.1A180MHZA741 PNP 4 S 20V0.1A <70/120nSA781 PNP 39B 开关20V0.2A <80/160NSA928 PNP ECB 通用20V1A0.25WA933 PNP 21 Uni 50V0.1A140MHzA940 PNP 28 音频功放开关150V1.5A25W4MHZ /C2073A950 PNP 21 通用30V0.8A0.6WA966 PNP 21 音频激励输出30V1.5A0.9W COP:C2236A968 PNP 28 音频功放开关160V1.5A25W100MHZ /C2238 A1009 PNP BCE 功放开关350V2A15WA1012 PNP 28 音频功率放60V5A25WA1013 PNP 21 视频放大160V1A0.9WA1015 PNP 21 通用60V0.15A0.4W8MHZA1020 PNP 21 音频开关50V2A0.9WA1123 PNP 21 低噪放大150V0.05A0.75WA1162 PNP 21d 通用贴片50V0.15A0.15WA1216 PNP BCE 功放开关180V17A200W20MHZ /2922A1220 PNP 29 音频功放开关120V1.5A20W150MHZ/C2690 A1265 PNP BCE 功放开关140V10A100W30MHZ /C3182 A1295 PNP BCE 功放开关230V17A200W30MHZ /C3264 A1301 PNP BCE 功放开关160V10A100W30MHZ /C3280 A1302 PNP BCE 功放开关200V15A150W30MHZ /C3281 A1358 ? PNP 高频120V1A10W120MHZA1444 PNP BCE 高速电源开关100V15A30W80MHZA1494 PNP BCE 功放开关200V17A200W20MHZ /C3858 A1516 PNP BCE 功放开关180V12A130W25MHZA1668 PNP 28B 电源开关200V2A25W20MHZA1785 PNP BCE 驱动400V1A1W/120V1A0.9W140MHA1941 PNP BCE 功放开关140V10A100WCOP:5198A1943 PNP BCE 功放开关230V15A150W /C5200 原A1988 PNP 30 功放开关B449 PNP 12 功放开关50V3.5A22.5W 锗管B631K PNP 29 音频功放开关120V1A8W130MHZ /D600K B647 PNP 21 通用120V1A0.9W140MHZ /D667B649 PNP 29 视放180V1.5A1W /D669B669 PNP 28 达林顿功放70V4A40WB673 PNP 28 达林顿功放100V7A40WB675 PNP 28 达林顿功放60V7A40WB688 PNP BCE 音频功放开关120V8A80W /D718B734 PNP 39B 通用60V1A1W /D774B744 PNP 21 通用30V0.1A0.25WB772 PNP 29 音频功放开关40V3A10WB774 PNP 21 通用30V0.1A0.25WB817 PNP 30 功放开关160V12A100W /D1047B834 PNP 28 功放开关60V3A30WB937A PNP 功放开关60V2A35 DRALB1020 PNP 28 功放开关达林顿100V7A40Wβ=6000B1079 PNP 30 达林顿功放100V20A100Wβ=5000/D1559 B1185 PNP 28B 功放开关60V3A25W 70MHZ /D1762B1238 PNP ECB 功放开关80V0.7A1W 100MHZB1240 PNP 39B 功放开关40V2A1W100HZB1243 PNP 39B 功放开关40V3A1W70HZB1316 PNP 54B 驱动功放达林顿100V2A10Wβ=15000B1317 PNP BCE 音频功放180V15A150W COP:D1975B1335 PNP 28 音频功放低噪80V4A30W 12MHZB1375 PNP BCE 音频功放60V3A2W9MHZB1400 PNP 28B 达林顿功放120V6A25W β=1000-20000 B1429 PNP BCE 功放开关180V15A150WB1494 PNP BCE 达林顿功放120V25A120Wβ=2000-20000 C106 NPN EBC 音频功放开关60V1.5A15WC380 NPN 21 高频放大35V0.03A250MHZC458 NPN 21 通用30V0.1A230MHzC536 NPN 21 通用40V0.1A180MHZC752 NPN 21 通用30V0.1A300MHzC815 NPN 21 通用60V0.2A0.25WC828 NPN 21 通用45V0.05A0.25WC900 NPN 21 低噪放大30V0.03A100MHZC943 NPN 4A 通用60V0.2A200MHZC945 NPN 21 通用50V0.1A0.5W250MHZC1008 NPN 6 通用80V0.7A0.8W50MHZC1162 NPN 29 音频功放开关35V1.5A10WC1213 NPN 39B 监视器专用35V0.5A0.4WC1222 NPN 21 低噪放大60V0.1A100MHZC1494 ? NPN 40A 发射36V6A PQ=40W/175MHZC1507 NPN 28 视放300V0.2A15WC1674 NPN 21 HF/ZF 30V0.02A600MHzC1815 NPN 21 通用60V0.15A0.4W8MHZC1855 NPN 21f HF/ZF 20V0.02A550MHzC1875 NPN 12 彩行1500V3.5A50WC1906 NPN 21 高频放大30V0.05A1000MHZC1942 NPN 12 彩行1500V3A50WC1959 NPN 21 通用30V0.4A0.5W300MHzC1970 NPN 28 手机发射40V0.6A PQ=1.3W/175MHZC1971 NPN 28A 手机发射35V2.0A PQ=7.0W/175MHZC1972 NPN 28A 手机发射35V3.5A PQ=15W/175MHZC2012 NPN 21 HF 30V0.03A200MHZC2027 NPN 12 行管1500V5A50WC2036C2068 NPN 28E 视频放大300V0.05A1.5W80MHZC2073 NPN 28 功率放大150V1.5A25W4MHZ /A940C2078 NPN 28 音频功放开关80V3A10W150MHZC2120 NPN 21 通用30V0.8A0.6WC2228 NPN 21 视频放大160V0.05A0.75WC2230 NPN 21 视频放大200V0.1A0.8WC2233 NPN 28 音频功放开关200V4A40WC2236 NPN 21 通用30V1.5A0.9W /A966C2238 NPN 28 音频功放开关160V1.5A25W100MHZ /A968 C2320 NPN 21 通用50V0.2A0.3W200MHZC2335 NPN 28 视频功放500V7A40WC2373 NPN 28 功放200V7.5A40WC2383 NPN 21 视频开关160V1A0.9W /A1015C2443 NPN 大铁功放开关600V50A400WC2481 NPN 29 音频功放开关150V1.5A20WC2482 NPN 21 视频放大300V0.1A0.9WC2500 NPN 21 通用30V2A0.9W150MHZC2594 NPN 29 音频功放开关40V5A10WC2611 NPN 29 视频放大300V0.1A1.25WC2625 NPN 30 音频功放开关450V10A80WC2682 NPN 29 NF/Vid 180V0.1A8WC2688 NPN 29 视放管300V0.2A10W80MHZC2690 NPN 29 音频功放开关120V1.2A20W150MHZ/A1220P C2751 NPN BCE 电源开关500V15A120Wβ=40C2837 NPN 30 音频功放开关150V10A100WC2898 NPN 28 音频功放开关500V8A50WC2922 NPN 43 音频功放开关180V17A200W50MHZ /A1216 C3026 NPN 12 开关管1700V5A50Wβ=20C3030 NPN BCE 开关管达林顿900V7A80Wβ=15C3039 NPN 28 电源开关500V7A50Wβ=40C3058 NPN 12 开关管600V30A200W β=15C3148 NPN 28 电源开关900V3A40Wβ=15C3150 NPN 28 电源开关900V3A50Wβ=15C3153 NPN 30 电源开关900V6A100Wβ=15C3182 NPN 30 功放开关140V10A100Wβ=95/A1265C3198 NPN 21 高频放大60V0.15A0.4W130MHZC3262 NPN BCE 达林顿功放800V10A100WC3264 NPN BCE PA功放开关230V17A200Wβ=170/A1295 C3280 NPN 30 音频功放开关160V12A120Wβ=100C3281 NPN 30 音频功放开关200V15A150W30MHZβ=100 C3300 NPN 30 音频功放开关100V15A100W β=600C3310 NPN 28C 电源开关500V5A40W β= 20C3320 NPN 28C 电源开关500V15A80W β= 15C3355 NPN 21F 高频放大20V0.1A6500MHZC3358 NPN 40B 高频放大20V0.1A7000MHZC3457 NPN BCE 电源开关1100V3A50Wβ=12C3460 NPN BCE 电源开关1100V6A100Wβ=12C3466 NPN BCE 电源开关1200V8A120Wβ=10C3505 NPN 28B 电源开关900V6A80W β=20C3527 NPN BCE 电源开关500V15A100Wβ=13C3528 NPN BCE 电源开关500V20A150Wβ=13C3595 NPN 29 射频30V0.5A1.2Wβ=90C3679 NPN BCE 电源开关900V5A100W6MHZC3680 NPN BCE 电源开关900V7A120W6MHZC3688 NPN BCE 彩行1500V10A150WC3720 NPN BCE 彩行1200V10A200WC3783 NPN BCE 高压高速开关900V5A100W 黄河21"C3795 NPN BCE 高压高速开关900V5A2W8MHzC3807 NPN BCE 低噪放大30V2A1.2W260MHZC3858 NPN BCE 功放开关200V17A200W20MHZ /A1494 C3866 NPN BCE 高压高速开关900V3A40WC3873 NPN BCE 高压高速开关500V12A75W30MHZC3886 NPN BCE 开关,行管1400V8A50W8MHZC3893 NPN 28B 行管1400V8A50W8MHZC3907 NPN 28B 功放开关180V12A130W30MHZC3953 NPN 29 视放120V0.2A1.3W 4000MHZC3987 NPN 28 达林顿50V3A20W β=1000C3995 NPN BCE 行管1500V12A180W 34寸C3997 NPN BCE 行管1500V15A250WC3998 NPN BCE 行管1500V25A250WC4024 NPN BCE 功放开关100V10A35W 24MHZC4038 NPN BCE 门电路50V0.1A0.3W180MHZC4059 NPN BCE 高速开关600V15A130W 0.5/2.2USC4106 NPN BCE 电源开关500V7A50W20MHZ?C4111 NPN BCE 开关行管1500V10A150WC4119 NPN BCE 微波炉开关1500V15A250WC4231 NPN 50C 音频功放800V2A30WC4237 NPN BCE 高压高速开关1000V8A120W30MHZC4242 NPN BCE 高压高速开关450V7A40WC4288 NPN BCE 行管1400V12A200W8MHZC4297 NPN BCE 电源开关500V12A75W10MHZC4517 NPN BCE 音频功放550V3A30W6MHZC4532 NPN BCEC4582 NPN 28b 电源开关600V15A75W20MHZON4673 NPN BCEON4873 NPN BCEC4706 NPN BCE 电源开关900V14A130W6MHzC4742 NPN 46 彩行1500V6A50W(带阻尼)C4745 NPN 46 彩行1500V6A50WC4747 NPN 46 彩行1500V10A50WC4769 NPN BCE 微机行管1500V7A60W(带阻尼)C4913 NPN BCE 大屏视放管2000V0.2A35WC4924 NPN BCE 音频功放800V10A70WC4927 NPN BCE 行管1500V8A50WC4927 NPN BCE SONY29"行管1500V8A50W 原装C4941 NPN BCE 行管1500V6A65W 500/380NSC4953 NPN BCE 500V2A25WC5020 NPN BCE 彩行1000V7A100WC5068 NPN BCE 彩行1500V10A50WC5086 NPN BCE 彩行1500V10A50WC5088 NPN BCE 彩行1500V10A50WC5129 NPN BCE 彩显行管1500V8A50W(带阻)C5132 NPN BCE 彩行1500V16A50WC5144 NPN BCE 大屏彩行1700V20A200WC5148 NPN BCEC5149 NPN BCE 高速高频行管1500V8A50W(带阻)C5198 NPN BCE 功放开关140V10A100WC5200 NPN BCE 功放开关230V15A150W /A1943 原C5207 NPN BCE 彩行1500V10A50W 原C5243 NPN BCE 彩行1700V15A200W 原C5244 NPN BCE 彩行1700V15A200WC5249 NPN BCEC5250 NPN BCE 开关1000V7A100W 原C5251 NPN BCE 彩行1500V12A50W 原C5252 NPN BCE 彩行1500V15A100W 原C5294 NPN BCEC5296 NPN BCE 开关管25"--34"大屏彩显电源管C5297 NPN BCE 开关管25"--34"大屏彩显电源管C5331 NPN BCE 大屏彩显行管1500V15A180WC5423 NPN BCED40C NPN ECB 对讲机用40V0.5A40W75MHZ(达林顿) D325 NPN BCE 功放开关50V3A25WD385 NPN 11 达林顿功放100V7A30WD400 NPN 21 通用25V1A0.75WD415 NPN 29 音频功放开关120V0.8A5WD438 NPN 21 通用500V1A0.75W100MHzD547 NPN 大铁功放开关600V50A400WD560 NPN BCE 达林顿功放150V5A30WD600K NPN 29 音频功放开关120V1A8W130MHZ/B631K D637 NPN 39E 通用60V0.1A150MHZ ****D667 NPN 21 视频放大120V1A0.9W140MHZ/B647D669 NPN 29 视频放大180V1.5A1W140MHZ/D669D718 NPN 30 音频功放开关120V8A80W /B668D774 NPN 39B 通用100V1A1W /B734D789 NPN 21 音频输出100V1A0.9WD820 NPN 12 彩行1500V5A50WD870 NPN 12 彩行1500V5A50W RRRRD880 NPN 28 音频功放开关60V3A10WD882 NPN 29 音频功放开关40V3A30WD884 NPN 28 音频功放开关330V7A40WD898 NPN 12 彩行1500V3A50WD951 NPN 12 彩行1500V3A65WD965 NPN 21 音频40V5A0.75WD966 NPN 21 音频40V5A1WD985 NPN 29 功放150V1.5A10WD986 NPN 29 功放150V1.5A10WD1025 NPN 28 达林顿功放200V8A50WD1037 NPN BCE 音频功放开关150V30A180WD1047 NPN 30 音频功放开关160V12A100W /B817D1071 NPN 28 功放300V6A40W DRA-LD1163A NPN 28 行偏转用350V7A40W60MHzD1175 NPN 12 行偏转用1500V5A100W β=15 原D1273 NPN 28 音频功放80V3A40W50MHZβ=1500D1302 NPN 21 音频25V0.5A0.5W200MHZD1397 NPN BCE 开关1500V3.5A50W3MHzD1398 NPN BCE 开关1500V5A50W3MHzD1403 NPN 28B 彩行1500V6A120WD1403 NPN 28B 彩行1500V6A120W 原D1415 NPN 28B 功放电源开关100V7A40Wβ=6000达林顿D1416 NPN 28B 功放电源开关80V7A40Wβ=6000(达林顿) D1426 NPN 28B 彩行1500V3.5A80Wβ=12 RRRRRD1427 NPN 28B 彩行1500V5A80Wβ=12 RRRRRD1428 NPN 28B 彩行1500V6A80Wβ=12 RRRRD1431 NPN 28B 彩行1500V5A80Wβ=20D1433 NPN 28B 彩行1500V7A80Wβ=20D1439 NPN BCE 彩行1500V3A80Wβ=8D1541 NPN 28B 彩行1500V3A80Wβ=20D1545 NPN 28B 彩行1500V5A50Wβ=20D1547 NPN BCE 彩行1500V7A80Wβ=20D1554 NPN BCE 彩行1500V3.5A80Wβ=12D1555 NPN BCE 彩行1500V5A80Wβ=12D1556 NPN BCE 彩行1500V6A80Wβ=12D1559 NPN BCE 达林顿功放100V20A100Wβ=5000/B1079 D1590 NPN 28 达林顿功放150V8A25W β=15000D1632 NPN 28B 彩行1500V4A70WD1640 NPN 29 达林顿功放120V2A1.2W β=4000-40000D1651 NPN SP 彩行1500V5A60W3MHZD1710 NPN BCE 彩行1500V5A50WD1718 NPN 28C 音频功放180V15A3.5W20MHZD1762 NPN BCE 音频功放开关60V3A25W90MHZ /B1185 D1843 NPN BCE 低噪放大50V1A1WD1849 NPN 50A 彩行1500V7A120WD1850 NPN 50A 彩行1500V7A120WD1859 NPN 50A 音频80V0.7A1W120MHZD1863 NPN 50A 音频120V1A1W100MHZD1877 NPN 30 彩行1500V4A50W(带阻尼)D1879 NPN 30 彩行1500V6A60W(带阻尼)D1887 NPN 30 彩行1500V10A70WD1930 NPN 21 达林顿达林顿100V2A1.2Wβ=1000D1975 NPN 53A 音频功放180V15A150W COP:B1317D1978 NPN 21 达林顿120V1.5A0.9Wβ=30000D1980 NPN 61B 达林顿100V2A10Wβ=1000-10000D1981 NPN ECB 达林顿100V2A1WD1993 NPN 45B 音频低噪55V0.1A0.4WD1994A NPN ECB 音频驱动60V1A1WD1997 NPN 45B 激励管40V3A1.5W100MHZD2008 NPN ECB 音频功放80V1A1.2WD2012 NPN BCE 音频功放60V3A2W3MHZD2136 NPN ECB 功放80V1A1.2WD2155 NPN 53A 音频功放180V15A150WD2256 NPN 46 达林顿功放120V25A125Wβ=2000-20000 D2334 NPN 28B 彩行1500V5A80WD2335 NPN BCE 彩行1500V7A100WD2349 NPN BCE 大屏彩显行管D2374 NPN BCED2375 NPN BCED2388 NPN EBC 达林顿90V3A1.2WD2445 NPN BCE 彩行1500V12.5A120WD2498 NPN BCE 彩行1500V6A50WD2588 NPN BCE 点火器用DK55 NPN BEC 开关400V4A60WBC307 PNP 21a 通用50V0.2A0.3WBC327 PNP CBE 低噪音频50V0.8A0.625W COM BC337 BC337 NPN 21a 音频激励低噪50V0.8A0.625W COM BC327 BC338 NPN 21a 通用激励50V0.8A0.6BC546 NPN 21a 通用80V0.2A0.5WBC547 NPN CBE 通用50V0.2A0.5W300MHZBD135 NPN 29 音频功放45V1.5A12.5WBD136 PNP 29 音频功放45V1.5A12.5WBD137 NPN 29 音频功放60V1.5A12.5WBD138 PNP 29 音频功放60V1.5A12.5WBD139 PNP 29 音频功放80V1.5A12.5WBD237 NPN 29 音频功放100V2A25WBD238 PNP 29 音频功放100V2A25WBD243 NPN 28 音频功放45V6A65WBD244 PNP 28 音频功放45V6A65WBD681 NPN 29 达林顿功放100V4A40WBD682 NPN 29 达林顿功放100V4A40WBF458 NPN 29 视放250V0.1A10WBU208A NPN 12 彩行1500V5A12.5WBU208D NPN 12 彩行1500V5A12.5W (带阻尼)BU323 NPN 28 达林顿功放450V10A125WBU406 NPN 28 行管400V7A60WBU508A NPN 28 行管1500V7.5A75WBU508A NPN 28 行管1500V7.5A75W 原BU508D NPN 28 行管1500V7.5A75W (带阻尼)BU806 NPN 28 功放400V8A60W DAR-LBU932R NPN 12 功放500V15A150W DAR-LBU941 NPN 12BU1508DX NPN 28 开关功放BU2506DX NPN 30 开关功放1500V7A50W /600NSBU2508AF NPN 30 开关功放700V8A125W /600NSBU2508AX NPN 30 开关功放700V8A125W /600NSBU2508DF NPN 30 开关功放700V8A125W/600NS(带阻尼) BU2508DX NPN 30 开关功放1500V8A50W/600NS(带阻尼) BU2520AF NPN 30 开关功放800V10A150W 1/500NSBU2520AX NPN 30 开关功放1500V10A150W 1/500NS BU2520DF NPN 30 开关功放800V10A150W1/500NS(带阻) BU2520DX NPN 30 开关功放1500V10A50W/600NS (带阻) BU2522AF NPN 30 开关功放1500V11A150W /350NSBU2522AX NPN 30 开关功放1500V11A150W /350NSBU2525AF NPN 30 开关功放1500V12A150W /350NSBU2525AX NPN 30 开关功放1500V12A150W /350NSBU2527AF NPN 30 开关功放1500V15A150WBU2532AW NPN 30 开关功放1500V15A150W(大屏)BUH515 NPN BCE 行管1500V10A80WBUH515D NPN BCE 行管1500V10A80W(带阻尼)BUS13A NPN 12 开关功放1000V15A175WBUS14A NPN 12 开关功放1000V30A250WBUT11A NPN 28 开关功放1000V5A100WBUT12A NPN 28 开关功放450V10A125WBUV26 NPN 28 音频功放开关90V14A65W /250nsBUV28A NPN 28 音频功放开关225V10A65W /250nsBUV48A NPN 30 音频功放开关450V15A150WBUW13A NPN 30 功放开关1000V15A150WBUX48 NPN 12 功放开关850V15A125WBUX84 NPN 30 功放开关800V2A40WBUX98A NPN 12 功放开关400V30A210W5MHZDTA114 PNP 10K-10K 160V0.6A0.625W(带阻)DTC143 NPN 录像机用4.7K-4.7KHPA100 NPN BCE 大屏彩显行管21#HPA150 NPN BCE 大屏彩显行管21#HSE830 PNP BCE 音频功放80V115W1MHZHSE838 NPN BCE 音频功放80V115W1MHZ COP/MJ4502MN650 NPN BCE 行管1500V6A80WMJ802 NPN 12 音频功放开关90V30A200WMJ2955 PNP 12 音频功放开关60V15A115WMJ3055 NPN 12 音频功放开关60V15A115WMJ4502 PNP 12 音频功放开关90V30A200W COP/MJ802MJ10012 NPN 12 达林顿400V10A175WMJ10015 NPN 12 电源开关400V50A200WMJ10016 NPN 12 电源开关500V50A200WMJ10025 12 电源开关850V20A250WMJ11032 NPN 12 电源开关120V50A300W DAR-LMJ11033 PNP 12 电源开关120V50A300W DAR-LMJ13333 NPN 12 电源开关400V20A175WMJ15024 NPN 12 音频功放开关400V16A250W4MHZ(原25.00) MJ15025 PNP 12 音频功放开关400V16A250W4MHZ(原25.00) MJE271 PNP 29 达林顿MJE340 NPN 29 视放300V0.5A20WMJE350 PNP 29 视放300V0.5A20WMJE2955T PNP BCE 音频功放开关60V1075W2MHZMJE3055T NPN BCE 音频功放开关70V1075W2MHZMJE5822 PNP BCE 音频功放开关500V8AMJE9730 NPN BCEMJE13003 NPN 29 功放开关400V1.5A14WMJE13005 NPN 28 功放开关400V4A60WMJE13007 NPN 28 功放开关1500V2.5A60WSE800TIP31C NPN BCE 功放开关100V3A40W3MHZTIP32C PNP BCE 功放开关100V3A40W3MHZTIP35C NPN 30 音频功放开关100V25A125W3MHZTIP36C PNP 30 音频功放开关100V25A125W3MHZTIP41C NPN 30 音频功放开关100V6A65W3MHZTIP42C PNP 30 音频功放开关100V6A65W3MHZTIP102 NPN 28 音频功放开关100V8A2WTIP105 28 音频功放开关TIP122 NPN 28 音频功放开关100V8A65W DARLTIP127 PNP 28 音频功放开关100V8A65W DARLTIP137 PNP 28 音频功放开关100V8A70W DARLTIP142 NPN 30 音频功放开关100V10A125W DAR-LTIP142大NPN 30 音频功放开关100V10A125W DAR-L TIP147 PNP 30 音频功放开关100V10A125W DAR-L 0 TIP147大PNP 30 音频功放开关100V10A125W DAR-L 0 TIP152 电梯用TL431 21 电压基准源UGN3120 SGO 霍尔开关UGN3144 SGO 霍尔开关60MIAL1 电磁/微波炉1000V60A300WT30G40 NPN BCE 大功率开关管400V30A300W5609 COML:56105610 COML:56099626 NPN 21 通用。
IRG4BC20UD中文资料
A
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)
IC , Collector-to-Emitter Current (A)
100
TJ = 25°C TJ = 150°C
Absolute Maximum Ratings
TO-220AB
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
HP ProLiant BL20p第四代(G4)服务器 说明书
HP ProLiant BL20p第四代(G4)服务器HP ProLiant BL20p G4是一款专为企业设计的高性能双处理器刀片式服务器，可以充分满足企业级用户的需求。
ProLiant BL20p G4采用高性能英特尔®至强®新一代双内核处理器、具备4 MB二级高速缓存；高达32 GB全缓冲PC2-5300 DDR2内存，支持镜像和在线备用功能；热插拔小尺寸SAS硬盘，通过集成的SmartArray E200i控制芯片提供RAID0和1, 并可选带电池保护的高速写缓存；网络性能极高，带有令人惊讶的2个千兆多功能网卡接口，可支持新型iSCSI连接。
为了保护用户的投资，新型ProLiant BL20p G4可采用与BL20p G3、BL25p、BL35p和BL45p相同的基础设施架构组件(注：现在使用的BL p-class刀片式服务器机箱都带有增强型背板组件的), 用户可以灵活选择刀片服务器，并可以在相同基础架构组件中获得不同性能的服务器。
ProLiant BL20p G4通过可选的BL20p G4光纤组件，可支持SAN的实施，即可升级为光纤集群运行模式。
采用ProLiant BL20p G4实施SAN时，客户可获得更高的数据可用性、轻松的扩展功能，而且可通过整合磁盘资源，节省管理成本；同时新一代ProLiant BL20p G4服务器可选新型的中间卡和多动能网卡选件支持更广泛的存储连接。
此外，利用HP的SAN和NAS (网络连接存储)融合网络，客户可设计一款汇聚应用程序、数据库和文件服务解决方案功能的存储架构，并可面向高端应用。
ProLiant BL20p G4专门针对HP StorageWorks进行了优化设计，可兼容多家第三方存储厂商的产品。
在结合增强型BL p-class刀片式服务器机箱时，通过集成的iLO 2网卡可支持新一代远程管理技术。
全新特性使用全新的64位英特尔至强双核处理器，标配全新的Smart Array E200i SAS阵列控制器，支持SFF SAS 硬盘和新型多功能网卡，新一代远程管理iLO 2可支持虚拟VLAN和虚拟KVM。
g4bc30kd场效应管参数
场效应管是一种常见的半导体器件，广泛应用于电子电路中的放大、开关、调节等功能。
场效应管的性能参数对电路的稳定性和性能影响巨大，因此对场效应管参数的深入了解是非常重要的。
本文将就场效应管参数展开详细介绍。
一、场效应管的基本结构场效应管是一种特殊的晶体管，它具有三个电极：栅极、漏极和源极。
栅极是控制电流的电极，漏极是输出电流的电极，源极是输入电流的电极。
场效应管的工作原理是通过控制栅极电压来改变漏极和源极之间的电流，从而实现放大、开关和调节等功能。
二、场效应管的参数1. 饱和漏极电流（IDSS）饱和漏极电流是场效应管在栅极与漏极之间的最大电压下所能通过的最大漏极电流。
它是衡量场效应管输出能力的重要参数，代表了场效应管的最大输出电流。
2. 压控漏极电阻（rds(on)）压控漏极电阻是场效应管在导通状态时，栅极与漏极之间的电阻。
它决定了场效应管导通时的电压降，也是衡量场效应管导通能力的重要参数。
一般情况下，压控漏极电阻越小，导通能力越强。
3. 漏极-源极饱和电压（VGS(TH)）漏极-源极饱和电压是场效应管导通时，栅极与漏极之间的电压。
它是触发场效应管导通的临界电压，也是衡量场效应管导通特性的重要参数。
漏极-源极饱和电压越小，场效应管的导通特性越好。
4. 最大耗散功率（PD）最大耗散功率是场效应管能够散热的最大功率。
它取决于场效应管的结构和材料，也是场效应管稳定性和可靠性的重要指标。
在实际应用中，需要根据最大耗散功率选择合适的散热器，以确保场效应管的安全工作。
5. 开启时间（turn-on time）和关闭时间（turn-off time）开启时间和关闭时间分别表示场效应管从关断到导通和从导通到关断所需的时间。
它们直接影响了场效应管的开关速度，也是衡量场效应管开关特性的重要参数。
三、场效应管参数的测试方法1. IDSS的测试方法IDSS的测试方法通常是在栅极和源极之间加零电压，然后测量漏极和源极之间的电流。
IXGH20N120中文资料
元器件交易网
IGBT
Preliminary Data Sheet
IXGH 20N120 VCES IXGT 20N120 IC25 VCE(sat) tfi(typ)
= 1200 V = 40 A = 2.5 V = 380 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
power supplies discharge
Advantages
• Easy to mount with one screw • Reduces assembly time and cost • High power density
© 2002 IXYS All rights reserved
DS98966 (11/02)
TO-247 (IXGH)
TO-268 (IXGT)
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering Md Weight Mounting torque (TO-247) TO-247 TO-268
IRFR420资料
tf
-
12 18
ns
Qg(TOT) VGS = 10V, ID = 2.5A, VDS = 0.8 x Rated BVDSS
-
13 19 nC
IG(REF) = 1.5mA (Figure 14)
Qgs
Gate Charge is Essentially Independent of Operating Temperature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
DRAIN (FLANGE)
DRAIN SOURCE
4-407
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
300 260
oC oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
EGP20G中文资料(Micro Commercial)中文数据手册「EasyDatasheet - 矽搜」
微型商业组件公司
. 保留更改,恕不另行通知任何的权利
产品在此进行更正,修改,补充,改进,或其他变化.
微型商业组件公司
. 不承担因应用程序的任何责任或
使用本文所述的任何产品的;它也没有传达任何许可在其专利的权利,也没有
他人的权利.对在这类应用产品的用户须承担所有使用风险
并同意举行
微型商业组件公司
. 和所有的公司
极大
RMS电压
35V 70V 140V 210V 280V 420V 560V
最大直流 阻塞 电压
50V 100V 200V 300V 400V 600V 800V
电气特性@ 25
最大平均 正向电流 峰值正向浪涌 当前 极大 瞬时 正向电压
EGP20A-20D EGP20F-20G EGP20J-20K
.01 .4
.6 .8 1.0 1.2 1.4 Volts
瞬时正向电流 - 安培
与
正向电压 - 伏特
图2
远期降额曲线
3.0
2.5
2.0
安培1.5
1.0
0.5电阻或电感性负载 0.375“设计（9.5mm）引线长度
00
50 75 100 125 150 175
OC
平均正向整流电流 - 安培
与
环境温度 -
最大直流 反向电流 额定直流阻断 电压 最大反向 恢复时间
EGP20A-20D EGP20F-20K
典型结 电容
EGP20A-20D EGP20F-20K
OC除非另有说明
IF(AV)
2.0 A TA = 55OC
IFSM
75A 8.3ms的半正弦
VF
1.00V IFM = 2.0A;
BC214LC中文资料
Absolute Maximum Ratings* T a =25°C unless otherwise noted* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1)These ratings are based on a maximum junction temperature of 150 degrees C.2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operationsElectrical Characteristics T a =25°C unless otherwise noted* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%Symbol ParameterValue Units V CEO Collector-Emitter Voltage -30V V CBO Collector-Base Voltage -45V V EBO Emitter-Base Voltage -5.0V I C Collector Current (DC)-- Continuous-500mA T J , T STGOperating and Storage Junction Temperature Range- 55 ~ 150°CSymbolParameterTest ConditionMin.Max.Units Off Characteristics V (BR)CEO Collector-Emitter Voltage I C = -2mA, I B = 0-30V V (BR)CBO Collector-Base Voltage I C = -10µA, I E = 0-45V V (BR)EBO Emitter-Base Voltage I E = -10µA, I C = 0-5.0V I CBO Collector Cut-off Current V CB = -30V, I E = 0-15nA I EBO Emitter Cut-off Current V EB = -4V, I C = 0 -15nAOn Characteristics *h FE DC Current GainV CE = -5V, I C = -2mA 140400V CE (sat)Collector-Emitter Saturation Voltage I C = -10mA, I B = -0.5mA I C = -100mA, I B = -5mA -0.25-0.6V V BE (sat)Base-Emitter Saturation Voltage I C = -100mA, I B = -5mA -1.1V V BE (on)Base-Emitter On Voltage V CE = -5V, I C = -2mA -0.6-0.72V Small Signal Characteristicsf T Current gain Bandwidth Product V CE = -5V, I C = -10mA f = 100MHz200MHz NF Noise FigureV CE = -5V, I C = -200µA R G = 2k Ω, f = 15.7KHz 2.0dBh fe Small Signal Current Gain I C = -2mA, V CE = -5V f = 1KHz350600C OBOutput CapacitanceV CB = -10V, f = 1MHz10pFBC214LCPNP General Purpose Amplifier•This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA.•Sourced from process 68.1. Emitter2. Collector3. BaseTO-921RθJC Thermal Resistance, Junction to Case83.3°C/W RθJA Thermal Resistance, Junction to Ambient200°C/WBC214LCTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E2CMOS™EnSigna™FACT™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。
IRG4PH40KD中文资料
IRG4PH40KDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEV CES = 1200VV CE(on) typ.= 2.74V@V GE = 15V, I C = 15APD- 91577BShort Circuit RatedUltraFast IGBTParameterMax.UnitsV CESCollector-to-Emitter Voltage 1200VI C @ T C = 25°C Continuous Collector Current 30I C @ T C = 100°C Continuous Collector Current 15I CM Pulsed Collector Current Q60AI LMClamped Inductive Load Current R 60I F @ T C = 100°C Diode Continuous Forward Current 8.0I FM Diode Maximum Forward Current 130t sc Short Circuit Withstand Time 10µs V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 160P D @ T C = 100°C Maximum Power Dissipation 65T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf•in (1.1 N•m)2/7/2000Parameter Min.Typ.Max.UnitsR θJC Junction-to-Case - IGBT ––––––0.77R θJC Junction-to-Case - Diode–––––– 1.7°C/WR θCS Case-to-Sink, flat, greased surface–––0.24–––R θJA Junction-to-Ambient, typical socket mount ––––––40WtWeight–––6 (0.21)–––g (oz)Thermal ResistanceAbsolute Maximum RatingsWFeatures• High short circuit rating optimized for motor control, t sc =10µs, V CC = 720V , T J = 125°C, V GE = 15V• Combines low conduction losses with high switching speed• Tighter parameter distribution and higher efficiency than previous generations• IGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodes• Latest generation 4 IGBT's offer highest power density motor controls possible• HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses• This part replaces the IRGPH40KD2 and IRGPH40MD2 products• For hints see design tip 97003Benefits 1IRG4PH40KDParameter Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)—94140I C = 15A Q ge Gate - Emitter Charge (turn-on)—1422nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on)—3755V GE = 15V t d(on)Turn-On Delay Time —50—t r Rise Time —31—T J = 25°Ct d(off)Turn-Off Delay Time —96140I C = 15A, V CC = 800V t f Fall Time —220330V GE = 15V, R G = 10ΩE on Turn-On Switching Loss — 1.31—Energy losses include "tail"E off Turn-Off Switching Loss — 1.12—mJ and diode reverse recovery E ts Total Switching Loss — 2.43 2.8See Fig. 9,10,18t sc Short Circuit Withstand Time 10——µs V CC = 720V, T J = 125°CV GE = 15V, R G = 10Ω , V CPK < 500Vt d(on)Turn-On Delay Time —49—T J = 150°C, See Fig. 10,11,18t rRise Time—33—I C = 15A, V CC = 800Vt d(off)Turn-Off Delay Time —290—V GE = 15V, R G = 10Ω,t f Fall Time—440—Energy losses include "tail"E ts Total Switching Loss— 5.1—mJ and diode reverse recovery L E Internal Emitter Inductance —13—nH Measured 5mm from package C ies Input Capacitance —1600—V GE = 0V C oes Output Capacitance—77—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance —26—ƒ = 1.0MHz t rr Diode Reverse Recovery Time —6395ns T J = 25°C See Fig.—106160T J = 125°C 14 I F = 8.0A I rr Diode Peak Reverse Recovery Current — 4.58.0A T J = 25°C See Fig.— 6.211T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge —140380nC T J = 25°C See Fig.—335880T J = 125°C 16 di/dt = 200Aµs di (rec)M /dtDiode Peak Rate of Fall of Recovery —133—A/µs T J = 25°C See Fig.During t b—85—T J = 125°C 17Switching Characteristics @ T J = 25°C (unless otherwise specified)nsnsParameter Min.Typ.Max.Units ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage S 1200——V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage —0.37—V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage — 2.74 3.4I C = 15A V GE = 15V — 3.29—V I C = 30A See Fig. 2, 5— 2.53—I C = 15A, T J = 150°C V GE(th)Gate Threshold Voltage 3.0— 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage —-3.3—mV/°C V CE = V GE , I C = 250µA g fe Forward Transconductance T 8.012—S V CE = 100V, I C = 15A I CES Zero Gate Voltage Collector Current ——250µAV GE = 0V, V CE = 1200V——3000V GE = 0V, V CE = 1200V, T J = 150°C V FM Diode Forward Voltage Drop — 2.6 3.3VI C = 8.0A See Fig. 13— 2.4 3.1I C = 8.0A, T J = 125°C I GES Gate-to-Emitter Leakage Current ——±100nAV GE = ±20VElectrical Characteristics @ T J = 25°C (unless otherwise specified)IRG4PH40KD 3Fig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4PH40KDFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4PH40KD 5Resistance Junction TemperatureFig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageIRG4PH40KDFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward CurrentCollector-to-Emitter Current110100246810FM F I n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A )Fo rwa rd Voltage Drop - V (V)IRG4PH40KD 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt01002003004005006001001000fdi /dt - (A/µs)R R Q - (n C )1010010001001000fdi /dt - (A/µs)d i (r e c )M /d t - (A /µs )40801201602001001000fdi /dt - (A/µs)t - (n s )r r1101001001000fdi /dt - (A/µs)I - (A )I R R MIRG4PH40KDFig. 18a - Test Circuit for Measurement ofI LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t ft1t2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrIRG4PH40KD 9V g G A T E S IG NA LDEV ICE U NDER T ES TCUR REN T D.U.T.V O LT A G E IN D.U.T.CUR REN T IN D1t0t1t2Figure 19. Clamped Inductive Load Test CircuitFigure 20. Pulsed Collector CurrentTest Circuit=800V4 X I C @25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitIRG4PH40KDD im en sion s in M illim eters a nd (Inches)CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P)- D - 5.30 (.209)4.70 (.185)3.65 (.143)3.55 (.140) 2.50 (.089)1.50 (.059)43X0.80 (.031)0.40 (.016)2.60 (.102)2.20 (.087)3.40 (.133)3.00 (.118)3X0.25 (.010)MC A S4.30 (.170)3.70 (.145)- C -2X5.50 (.217)4.50 (.177)5.50 (.217)0.25 (.010)1.40 (.056)1.00 (.039)D MMB - A -15.90 (.626)15.30 (.602)- B -12320.30 (.800)19.70 (.775)14.80 (.583)14.20 (.559)2.40 (.094)2.00 (.079)2X 2X5.45 (.215)*N O T E S :1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14.5M , 1982.2 C O N T R O L L IN G D IM E N S IO N : IN C H.3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ).4 C O N F O R M S T O JE D E C O U T L IN E T O -247A C.L EA D A S S IG N M EN T S 1 - G A T E2 - C O L L E C T O R3 - E M IT T E R4 - C O L L E C T O R*LO N G E R LEA D ED (20m m )V ER S IO N A V A IL A B L E (T O -247A D)T O O R D ER A D D "-E" S U F F IX T O P A R T N U M B ERCase Outline — TO-247ACNotes:Q Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)R V CC =80%(V CES ), V GE =20V, L=10µH, R G = 10Ω (figure 19)S Pulse width ≤ 80µs; duty factor ≤ 0.1%.T Pulse width 5.0µs, single shot.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936Data and specifications subject to change without notice. 6/00。
TPS73201DBVRG4中文资料
DRB PACKAGE 3mm x 3mm SON (TOP VIEW) OUT 1 N/C 2 NR/FB 3 GND 4 8 7 6 5 IN N/C N/C EN
Optional Typical Application Circuit for Fixed-Voltage Versions
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Copyright © 2003–ቤተ መጻሕፍቲ ባይዱ006, Texas Instruments Incorporated
元器件交易网
TPS732xx
SBVS037I – AUGUST 2003 – REVISED MAY 2006
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
SIHLI520G中文资料
Power MOSFETIRLI520G, SiHLI520GVishay SiliconixFEATURES•Isolated Package•H igh Voltage Isolation = 2.5 kV RMS (t = 60 s;f = 60 Hz)•Sink to Lead Creepage Distance = 4.8 mm •Logic-Level Gate Drive•R DS (on) Specified at V GS = 4 V and 5 V •Fast Switching•Ease of Paralleling•Lead (Pb)-free Available DESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 25 V, starting T J = 25 °C, L = 4.9 mH, R G = 25 Ω, I AS = 7.2 A (see fig. 12).c.I SD ≤ 9.2 A, dI/dt ≤ 110 A/µs, V DD ≤ V DS , T J ≤ 175 °C.d. 1.6 mm from case.PRODUCT SUMMARYV DS (V)100R DS(on) (Ω)V GS = 5 V 0.27Q g (Max.) (nC)12Q gs (nC) 3.0Q gd (nC)7.1ConfigurationSingle ORDERING INFORMATIONPackage TO-220 FULLPAK Lead (Pb)-free IRLI520GPbF SiHLI520G-E3 SnPbIRLI520G SiHLI520GABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedPARAMETER SYMB O L LIMIT UNIT Drain-Source Voltage V DS100VGate-Source Voltage V GS ± 10 Continuous Drain Current V GS at 5 VT C = 25 °C I D7.2A T C = 100 °C5.1Pulsed Drain Current a I DM 29Linear Derating Factor0.24W/°C Single Pulse Avalanche Energy b E AS 170mJ Repetitive Avalanche Current a I AR 7.2 A Repetitive Avalanche Energy a E AR 3.7mJ Maximum Power Dissipation T C = 25 °CP D 37WPeak Diode Recovery dV/dt cdV/dt 5.5V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 175°C Soldering Recommendations (Peak Temperature)for 10 s 300d Mounting Torque6-32 or M3 screw10 lbf · in 1.1N · mIRLI520G, SiHLI520GVishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSPARAMETER SYMBL TYP.MAX.UNIT Maximum Junction-to-Ambient R thJA -65°C/WMaximum Junction-to-Case (Drain)R thJC- 4.1IRLI520G, SiHLI520GVishay SiliconixIRLI520G, SiHLI520G Vishay SiliconixIRLI520G, SiHLI520GVishay SiliconixFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 12b - Unclamped Inductive WaveformsIRLI520G, SiHLI520GVishay SiliconixFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test CircuitIRLI520G, SiHLI520GVishay Siliconix ArrayFig.14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see /ppg?90397.Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。
IRG4BC30KDPBF中文资料
ParameterMax.UnitsV CESCollector-to-Emitter Voltage 600VI C @ T C = 25°C Continuous Collector Current 28I C @ T C = 100°C Continuous Collector Current 16I CM Pulsed Collector Current58AILMClamped Inductive Load Current 58I F @ T C = 100°C Diode Continuous Forward Current 12I FM Diode Maximum Forward Current 58t sc Short Circuit Withstand Time 10µs V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 100P D @ T C = 100°C Maximum Power Dissipation 42T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf in (1.1 N m)IRG4BC30KDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE V CES = 600VV CE(on) typ. = 2.21V@V GE = 15V, I C = 16AShort Circuit RatedUltraFast IGBT12/23/03PD -94910Parameter Min.Typ.Max.UnitsR θJC Junction-to-Case - IGBT 1.2R θJC Junction-to-Case - Diode2.5°C/WR θCS Case-to-Sink, flat, greased surface0.50 R θJA Junction-to-Ambient, typical socket mount 80WtWeight2 (0.07)g (oz)Thermal ResistanceAbsolute Maximum RatingsW FeaturesHigh short circuit rating optimized for motor control, t sc =10µs, @360V V CE (start), T J = 125°C, V GE = 15VCombines low conduction losses with high switching speedtighter parameter distribution and higher efficiency than previous generationsIGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodes Lead-FreeLatest generation 4 IGBTs offer highest power density motor controls possibleHEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching lossesThis part replaces the IRGBC30KD2 and IRGBC30MD2 productsFor hints see design tip 97003Benefits 1IRG4BC30KDPbFParameter Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on) 67100I C = 16A Q ge Gate - Emitter Charge (turn-on) 1116nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on) 2537V GE = 15V t d(on)Turn-On Delay Time 60 t r Rise Time 42 T J = 25°Ct d(off)Turn-Off Delay Time 160250I C = 16A, V CC = 480V t f Fall Time 80120V GE = 15V, R G = 23ΩE on Turn-On Switching Loss 0.60 Energy losses include "tail"E off Turn-Off Switching Loss 0.58 mJ and diode reverse recovery E ts Total Switching Loss 1.18 1.6See Fig. 9,10,14t sc Short Circuit Withstand Time 10 µs V CC = 360V, T J = 125°CV GE = 15V, R G = 10Ω , V CPK < 500Vt d(on)Turn-On Delay Time 58 T J = 150°C,See Fig. 11,14t rRise Time42 I C = 16A, V CC = 480Vt d(off)Turn-Off Delay Time 210 V GE = 15V, R G = 23Ωt f Fall Time160 Energy losses include "tail"E ts Total Switching Loss1.69 mJ and diode reverse recovery L E Internal Emitter Inductance 7.5 nH Measured 5mm from package C ies Input Capacitance 920 V GE = 0V C oes Output Capacitance110 pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance 27 = 1.0MHz t rr Diode Reverse Recovery Time 4260ns T J = 25°C See Fig. 80120T J = 125°C 14 I F = 12A I rr Diode Peak Reverse Recovery Current 3.5 6.0AT J = 25°C See Fig. 5.610T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge 80180nC T J = 25°C See Fig. 220600T J = 125°C 16 di/dt = 200Aµs di (rec)M /dtDiode Peak Rate of Fall of Recovery 180 A/µs T J = 25°C See Fig.During t b160 T J = 125°C 17Parameter Min.Typ.Max.Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage 0.54 V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage 2.21 2.7I C = 16A V GE = 15V2.88 V I C = 28A See Fig. 2, 5 2.36 I C = 16A, T J = 150°CV GE(th)Gate Threshold Voltage 3.0 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage -12 mV/°C V CE = V GE , I C = 250µAg feForward Transconductance 5.48.1 S V CE = 100V, I C = 16A I CES Zero Gate Voltage Collector Current 250µAV GE = 0V, V CE = 600V2500V GE = 0V, V CE = 600V, T J = 150°CV FM Diode Forward Voltage Drop 1.4 1.7V I C = 12A See Fig. 131.3 1.6I C = 12A, T J = 150°CI GES Gate-to-Emitter Leakage Current ±100nAV GE = ±20VSwitching Characteristics @ T J = 25°C (unless otherwise specified)Electrical Characteristics @ T J = 25°C (unless otherwise specified)nsnsIRG4BC30KDPbF 3Fig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4BC30KDPbFFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4BC30KDPbF 5Resistance Junction TemperatureFig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current1101000.40.8 1.2 1.6 2.0 2.4FMFI n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A ) Forward Voltage Drop - V (V)IRG4BC30KDPbF 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt2004006001001000fdi /dt - (A/µs)R R Q - (n C )101001000100001001000fdi /dt - (A/µs)d i (r e c )M /d t - (A /µs)40801201601001000fdi /dt - (A/µs)t - (ns )r r 1101001001000fdi /dt - (A/µs)I - (A )I R RMIRG4BC30KDPbFFig. 18a - Test Circuit for Measurement ofI LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t ft2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrIRG4BC30KDPbF 9Vg GATE SIGNALDEVICE UNDER TESTCURRENT D.U.T.VOLTAGE IN D.U.T.CURRENT IN D1t0t1t2Figure 19. Clamped Inductive Load Test CircuitFigure 20. Pulsed Collector CurrentTest Circuit=480V4 X I C @25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitIRG4BC30KDPbFNotes:Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)V CC =80%(V CES ), V GE =20V, L=10µH, R G = 23Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot.TO-220AB Package OutlineData and specifications subject to change without notice.233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .12/03元器件交易网Note: For the most current drawings please refer to the IR website at:/package/。
1320G4中文资料
Anderson Power Products®HEADQUARTERS: 13 Pratts Junction Road, Sterling, MA 01564-2305 USA T:978-422-3600 F:978-422-3700EUROPE: Rathealy Road, Fermoy Co. Cork, Ireland T:353-(0)25-32277 F:353-(0)25-32296ASIA/PACIFIC: IDEAL Anderson Asia Pacific Ltd., Unit 922-928 Topsail Plaza, 11 On Sum Street, Shatin N.T., Hong Kong T:852-2636-0836 F:852-2635-9036CHINA: IDEAL Anderson T echnologies (Shenzhen) Ltd., Block A8 T antou W. Ind. Par, Songgang Baoan District, Shenzhen, PR. China 51810 T: 86-755-2768-2118 F: 86-755-2768-2218TAIWAN: IDEAL Anderson Asia Pacific Ltd., Taiwan Branch, 4F.-2, No.116, Dadun 20th St., Situn District, Taichung City 407, Taiwan (R.O.C.) T: 886-4-2310-6451 F:886-4-2310-6460PP120 Powerpole®ConnectorPRODUCT SPECIFICATIONS111111111115920 Use with 1319 #2 to #6 33.6/13.35921 Use with 1319 #2 to #8 33.6/8.4Powerpole ® connectors provide cost-effective reliability, design flexibility and safety for your products' manufacture, installation and maintenance. Powerpoles are stackable and color-coded for easycustomization into multipole blocks.The housings are modular and genderless.Powerpole ® connectors provide 600 Volts continuous AC or DC operation. Wire sizes range from #2 to #8 AWG (33.6 to 8.4 mm²).1319G6Individual#6 13.31389G4 - locator #2 to #8FEATURES • Flat wiping contact system Minimal contact resistance at high current, wiping action cleans contact surface during connection/disconnection • Colored modular housingsProvides visual identification of proper mating connector• Molded-in dovetailsSecures individual connectors into "keyed" assemblies which prevents misconnection with similar configurationsNote: For additional colors please contact customer serviceAnderson Power Products®EUROPE: Rathealy Road, Fermoy Co. Cork, Ireland T:353-(0)25-32277 F:353-(0)25-32296ASIA/PACIFIC: IDEAL Anderson Asia Pacific Ltd., Unit 922-928 Topsail Plaza, 11 On Sum Street, Shatin N.T., Hong Kong T:852-2636-0836 F:852-2635-9036CHINA: IDEAL Anderson Technologies (Shenzhen) Ltd., Block A8 T antou W. Ind. Par, Songgang Baoan District, Shenzhen, PR. China 51810 T : 86-755-2768-2118 F: 86-755-2768-2218TAIWAN: IDEAL Anderson Asia Pacific Ltd., Taiwan Branch, 4F.-2, No.116, Dadun 20th St., Situn District, Taichung City 407, Taiwan (R.O.C.) T: 886-4-2310-6451 F:886-4-2310-6460PP120 Powerpole ®ConnectorDIMENSIONSTEMPERATURE RISE CHARTSBushings - (for use with 1319 contacts)Part Reduces -A- -B- -C- Number From mm in. mm in. mm in.5919 #2 to #4 AWG 21.4 .84 8.4 .33 7.2 .295920 #2 to #6 AWG 21.4 .84 8.4 .33 5.8 .235921#2 to #8 AWG 21.4 .84 8.4 .33 4.6 .18PP120 SinglepoleTemperature Rise at Constant CurrentAmperes AppliedT e m p e r a t u r e (°C )010203040204060801001201401602 AWG 4 AWG 6 AWGPP120 MultipoleTemperature Rise at Constant CurrentAmperes AppliedT e m p e r a t u r e (°C )010*******20406080100120140160PP120 Multipole Pulse Current CapabilityDuration of Current (seconds)A m p e r e s1002003004005006007000.51248163264128256512 2 AWG 4 AWG 6 AWG2 AWG 4 AWG 6 AWGContactPart -A- -B- -C- -D- -E- Number mm in. mm in. mm in. mm in. mm in. 1319 50.8 2.00 11.1 0.44 8.7 0.34 21.6 0.85 10.4 0.41 1319G4 50.8 2.00 11.1 0.44 7.5 0.30 21.6 0.85 10.4 0.41 1319G650.8 2.00 11.1 0.44 5.6 0.22 21.6 0.85 10.4 0.412 or 4 Pole PoleMounting ClampsPart -A- -B- -C- -D- -E- Number Number mm in. mm in. mm in. mm in. mm in. of Poles 1464G1 60.5 2.38 47.7 1.88 38.1 1.50 44.5 1.75 4.0 0.16 (2 Pole)1464G1 60.5 2.38 70.0 2.75 60.3 2.37 44.5 1.75 4.0 0.16 (4 Pole)1464G2 82.6 3.25 47.7 1.88 38.1 1.50 66.7 2.63 4.0 0.16 (3 Pole)1464G2 82.6 3.25 70.0 2.7560.3 2.37 66.7 2.63 4.0 0.16 (6 Pole)Housing[ 22.2 ]。
IRGP20B120-PDF
V G E (th)
∆V G E (th) / ∆Tj
G a te T h re sh o ld V o lta g e T e m p e ra tu re C o e ff. o f T h re sh o ld V o lta g e F o rw a rd T ra n sco n d u cta n ce
M in. 1200
Typ. + 1 .2 3 .0 5
M ax. Units V 3 .4 5 3 .8 0 4 .8 5 4 .5 0 5 .0 6 6 .0 1 7 .8 250 750 2200 1 .9 6 2 .0 6 2 .0 3 2 .1 8 ±1 0 0 nA V V
mV/ C
o
Conditions
P aram eter
V (B R )C E S
C o lle cto r-to -E m itte r B re a kd o w n V o lta g e
∆V (B R )C E S / ∆Tj T e m p e ra tu re C o e ff. o f B re a kd o w n V o lta g e
M in.
Typ. 169 24 82 850 425 1275 1350 610 1960 50 20 204 24 2200 210 85
M ax. Units 254 36 126 1050 650 1800 1550 875 2425 65 30 230 35
VGE = 0V IC = 2 0 A
Conditions
VCC = 6 0 0 V VGE = 15V IC = 2 0 A , V C C = 6 0 0 V
Fig.
DF04-G中文资料
5-G 0-G1387, A$ $ & $ % $ *+ ,l 5-G 1-G 2-G 4-G 6-G 8-G 0-G # $- . & . & / $" 0 - " # $- . & / $" 1 - " / $" / / / 2 ' 3 / .4! . & / $"/ 5623 2'6/ 7& $" . 8 2 9 7 : ;. & # $- $ ! " 3 5 ! " $ ; $& $ $ <=> > 4 ?9 5 7 $ / $" 9 7 / / # $- . & 7 .$ 1 - " / $" 9 @7 + $ = $ $ $ <: ? + $ $ . $ <: ? . 2 A 0 8 $ " $ ! $" $ .$ "%; B: 4 $ $ 4() $ $ & & $" 2 /$ $ C $ * # * $ 5$Green Products 元器件交易网0.010.11.0100.40.60.81.01.21.4I ,I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )F V ,INSTANTANEOUS FORWARD VOLTAGE (V)Fig.2T yp Forward Characteristics (per element)F 0102030405060110100I ,P E A K F O R W A R D S U R G E C U R R E N T (A )F S M NUMBER OF CYCLES AT 60 HzFig. 3 Max Non-Repetitive Peak Forward Surge Current110100110100C ,C A P A C I T A N C E (p F )J V ,REVERSE VOLTAGE (V)Fig.4Typ Junction Capacitance (per element)R 0.010.11.01010020406080100120140I ,I N S T A N T A N E O U S R E V E R S E C U R R E N T (µA )R PERCENT OF RATED PEAK REVERSE VOLTAGE (%)Fig.5Typ Reverse Characteristics (per element)1.00.5406080100120140I ,A V E R A G E F O R W A R D C U R R E N T (A )(A V )T ,AMBIENT TEMPERATURE (°C)Fig.1Output Current Derating CurveA 5-G 0-G元器件交易网DISCLAIMER :1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improveproduct characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement .3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectualproperty claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting fromuse at a value exceeding the absolute maximum rating.5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of Sensitron Semiconductor.7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.Green ProductsSENSITRON SEMICONDUCTOR• ! ! !! "#$ • • % & ' (& ) *+,,---. & ./ 0 • 1 2 &% # % 3 & ./ 0 •5-G 0-G1387, A•••••元器件交易网。
COP840CJ资料
COP820CJ/COP840CJ Family8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory,Comparator and Brown Out DetectorGeneral DescriptionThe COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory,an Analog comparator and Brownout detection.These single-chip CMOS devices are suited for lower-functionality applications where power and voltage fluctua-tions are a consideration.Pin and software compatible (no Brownout;different Vcc range)4k/32k OTP versions are available (COP87LxxCJ/RJ Family)for pre-production,and for use with a range of COP8software and hardware devel-opment tools.Family features include an 8-bit memory mapped architec-ture,10MHz CKI with 1us instruction cycle,one multi-function 16-bit timer/counter,MICROWIRE/PLUS ™serial I/O,one analog comparator,power saving HALT mode,MIWU,on-chip R/C oscillator capacitor (COP840CJ),high current outputs,software selectable I/O options,WATCH-DOG ™timer,modulator/timer,Brownout detector,Power on Reset,2.5v-6.0v operation,and 16/20/28pin packages.In this datasheet,the term COP820CJ refers to packages in-cluding the COP820CJ,COP822CJ,and COP823CJ;and COP840CJ refers to COP840CJ,COP842CJ,COP940CJ,and COP942CJ.Devices included in this data sheet are:Device Memory (bytes)RAM (bytes)I/O Pins Packages Temperature CommentsCOP820CJ 1k ROM 642428DIP/SOIC -40to +85˚C COP822CJ 1k ROM 541620DIP/SOIC -40to +85˚C COP823CJ 1k ROM 641216SOIC -40to +85˚C COP840CJ 2k ROM 1282428DIP/SOIC -40to +85˚C Low EMICOP940CJ 2k ROM 1282428DIP/SOIC -0to +70˚C 2.5V-4.5V,CJH =4V-6VCOP842CJ 2k ROM 1281620DIP/SOIC -40to +85˚C COP942CJ2k ROM1281620DIP/SOIC-0to +70˚C2.5V-4.5V,CJH =4V-6V Key Featuresn Multi-Input Wake Up (on the 8-bit Port L)n Brown out detector n Analog comparatorn Modulator/timer (High speed PWM for IR transmission)n16-bit multi-function timer supporting —PWM mode—External event counter mode —Input capture moden 1024or 2048bytes of ROM n 64or 128bytes of RAMn Quiet design (low radiated emissions)nIntegrated capacitor for the R/C oscillator for COP840CJI/O Featuresn Software selectable I/O options (TRI-STATE ®output,push-pull output,weak pull-up input,high impedance input)n High current outputs (8pins)n Packages—16SO with 12I/O pins for COP820CJ —20DIP/SO with 16I/O pins —28DIP/SO with 24I/O pinsn Schmitt trigger inputs on Port G n MICROWIRE/PLUS serial I/OCPU/Instruction Set Featuren 1µs instruction cycle timen Three multi-source vectored interrupts servicing —External interrupt with selectable edge —Timer interrupt —Software interruptn 8-bit Stack Pointer (SP)—stack in RAMn Two 8-bit register indirect data memory pointers (B,X)Fully Static CMOSn Low current drain (typically <1µA)n Single supply operation:2.5V to 6.0Vn Temperature ranges:−0˚C to +70˚C and −40˚C to +85˚CDevelopment Supportn Emulation and OTP devicesn Real time emulation and full program debug offered by MetaLink Development SystemTRI-STATE ®is a registered trademark of National Semiconductor Corporation.COP8™,MICROWIRE ™,MICROWIRE/PLUS ™and WATCHDOG ™are trademarks of National Semiconductor Corporation.iceMASTER ®is a registered trademark of MetaLink Corporation.September 1999COP820CJ/COP840CJ Family,8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory,Comparator and Brown Out Detector©2000National Semiconductor Corporation Block DiagramConnection DiagramsDS011208-12k ROM and 128Bytes RAM for COP840CJFIGURE 1.Block DiagramDS011208-3Top ViewOrder Number COPCJ820-XXX/N orCOPCJ820-XXX/M,Order Number COPCJ840-XXX/N orCOPCJ840-XXX/M,Order Number COPCJ940-XXX/N orCOPCJ940-XXX/MSee NS Package Number N28B orM28BDS011208-4Top ViewOrder Number COPCJ822-XXX/N orCOPCJ822-XXX/MOrder Number COPCJ842-XXX/N orCOPCJ842-XXX/MOrder Number COPCJ942-XXX/N orCOPCJ942-XXX/MSee NS Package Number N20A orM20B 2Connection Diagrams(Continued)COP820CJ/COP840CJ Pin AssignmentPort Pin Typ.ALT Function16-Pin20-Pin28-Pin L0I/O MIWU/CMPOUT5711 L1I/O MIWU/CMPIN−6812 L2I/O MIWU/CMPIN+7913 L3I/O MIWU81014 L4I/O MIWU91115 L5I/O MIWU101216 L6I/O MIWU111317 L7I/O MIWU/MODOUT121418 G0I/O INTR1725 G1I/O1826 G2I/O1927 G3I/O TIO152028 G4I/O SO11 G5I/O SK1622 G6I SI133 G7I CKO244 I0I7 I1I8 I2I9 I3I10 D0O19 D1O20 D2O21 D3O22 VCC466 GND131523 CKI355 RESET141624COP820CJ/COP840CJ Family 3Absolute Maximum Ratings (Note 1)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.Supply Voltage (V CC )7.0V Voltage at any Pin−0.3V to V CC+0.3VTotal Current into V CC pin (Source)80mA Total Current out of GND pin (sink)80mAStorage Temperature Range −65˚C to +150˚CNote 1:Absolute maximum ratings indicate limits beyond which damage to the device may occur.DC and AC electrical specifications are not ensured when operating the de-vice at absolute maximum ratings.DC Electrical Characteristics−0˚C ≤T A ≤+70˚C for COP94x and −40˚C ≤T A ≤+85˚C for all othersParameterConditionsMin TypMax Units Operating Voltage Brown Out Disabled 2.5 6.0V COP94xCJ Brown Out Disabled 2.5 4.5V COP94xCJHBrown Out Disabled 4.56.0V Power Supply Ripple 1(Note 2)Peak to Peak0.1V CCVSupply Current (Note 3)CKI =10MHz V CC =6V,tc =1µs 6.0mA CKI =4MHz V CC =6V,tc =2.5µs 3.5mA CKI =4MHz V CC =4.0V,tc =2.5µs 2.0mA CKI =1MHzV CC =4.0V,tc =10µs 1.5mA HALT Current with Brown Out Disabled (Note 4)V CC =6V,CKI =0MHz <110µA HALT Current with Brown Out EnabledV CC =6V,CKI =0MHz<50110µACOP840CJ Supply Current (Note 3)CKI =10MHz,R =2.2k V CC =6V,tc =1µs 8.0mA CKI =4MHz,R =4.7k V CC =6V,tc =2.5µs 6.0mA CKI =4MHz,R =4.7k V CC =4.5V,tc =2.5µs 2.5mA CKI =1MHz,R =20k V CC =4.5V,tc =10µs 1.5mA HALT Current with Brown Out DisabledV CC =6V,CKI =0MHz <2.28µA HALT Current with Brown Out EnabledV CC =6V,CKI =0MHz<50100µA Brown Out Trip Level (Brown Out Enabled)1.8 3.1 4.2V COP840CJ Brown Out Trip Level (Brown Out Enabled) 1.93.13.9VINPUT LEVELS (V IH ,V IL )Reset,CKI:Logic High 0.8V CCV Logic Low 0.2V CCVAll Other Inputs Logic High 0.7V CCV Logic Low 0.2V CCV Hi-Z Input Leakage V CC =6.0V−2+2µA Input Pullup CurrentV CC =6.0V,V IN =0V−40−250µA L-and G-Port Hysteresis (Note 6)COP840CJ 0.05V CC0.35V CCVC O P 820C J /C O P 840C J F a m i l y 4DC Electrical Characteristics(Continued)−0˚C≤T A≤+70˚C for COP94x and−40˚C≤T A≤+85˚C for all othersParameter Conditions Min Typ Max Units Output Current LevelsD Outputs:Source V CC=4.5V,V OH=3.8V−0.4mAV CC=2.5V,V OH=1.8V−0.2mA Sink V CC=4.5V,V OL=1.0V10mAV CC=2.5V,V OH=0.4V2mA L4–L7Output Sink V CC=4.5V,V OL=2.5V15mA All OthersSource(Weak Pull-up Mode)V CC=4.5V,V OH=3.2V−10−110µAV CC=2.5V,V OH=1.8V−2.5−33µA Source(Push-pull Mode)V CC=4.5V,V OH=3.8V−0.4mAV CC=2.5V,V OH=1.8V−0.2mA Sink(Push-pull Mode)V CC=4.5V,V OL=0.4V 1.6mAV CC=2.5V,V OL=0.4V0.7mA TRI-STATE Leakage−2.0+2.0µA Allowable Sink/SourceCurrent Per PinD Outputs15mA L4–L7(Sink)20mA All Others3mA Maximum Input Current Room Temperature±100mA without Latchup(Note5)RAM Retention Voltage,V r500ns Rise and 2.0VFall Time(Min)Input Capacitance7pF Load Capacitance on D21000pF Note2:Rate of voltage change must be less than10V/mS.Note3:Supply current is measured after running2000cycles with a square wave CKI input,CKO open,inputs at rails and outputs open.Note4:The HALT mode will stop CKI from oscillating in the RC and crystal configurations.HALT test conditions:L,and G0..G5ports configured as outputs and set high.The D port set to zero.All inputs tied to V CC.The comparator and the Brown Out circuits are disabled.Note5:Pins G6and RESET are designed with a high voltage input network.These pins allow input voltages greater than V CC and the pins will have sink current to V CC when biased at voltages greater than V CC(the pins do not have source current when biased at a voltage below V CC).The effective resistance to V CC is750Ω(typical).These two pins will not latch up.The voltage at the pins must be limited to less than14V.COP820CJ/COP840CJ Family 5AC Electrical Characteristics−40˚C ≤T A ≤+85˚C unless otherwise specifiedParameterConditions Min Typ Max Units Instruction Cycle Time (tc)Crystal/Resonator 4.5V ≤V CC ≤6.0V 1DC µs 2.5V ≤V CC ≤4.5V 2.5DC µs R/C Oscillator4.5V ≤V CC ≤6.0V 3DC µs COP840CJ 2DC µs 2.5V ≤V CC ≤4.5V 7.5DC µs COP840CJ5DCµs V CC Rise Time when Using Brown OutV CC =0V to 6V50µsFrequency at Brown Out Reset 4MHz CKI Frequency For Modular Output 4MHz CKI Clock Duty Cycle (Note 6)fr =Max4060%Rise Time (Note 6)fr =10MHz ext.Clock 12ns Fall Time (Note 6)fr =10MHz ext.Clock 8ns Inputs t Setup 4.5V ≤V CC ≤6.0V 200ns 2.5V ≤V CC ≤4.5V 500ns t Hold4.5V ≤V CC ≤6.0V 60ns 2.5V ≤V CC ≤4.5V 150nsOutput Propagation Delay R L =2.2k,CL =100pF t PD1,t PD0SO,SK 4.5V ≤V CC ≤6.0V 0.7µs 2.5V ≤V CC ≤4.5V 1.75µs All Others 4.5V ≤V CC ≤6.0V 1µs 2.5V ≤V CC ≤4.5V5µs Input Pulse Width Interrupt Input High Time 1tc Interrupt Input Low Time 1tc Timer Input High Time 1tc Timer Input Low Time1tc MICROWIRE Setup Time (t µWS )20ns MICROWIRE Hold Time (t µWH )56ns MICROWIRE Output 220ns Propagation Delay (t µPD )Reset Pulse Width1.0µsNote 6:Parameter characterized but not production tested.DS011208-2FIGURE 3.MICROWIRE/PLUS TimingC O P 820C J /C O P 840C J F a m i l y 6Comparator DC and AC Characteristics4V≤V CC≤6V,−40˚C≤T A≤+85˚C(Note7)Parameters Conditions Min Type Max Units Input Offset Voltage0.4V<V IN<V CC−1.5V±10±25mV Input Common Mode Voltage Range0.4V CC−1.5V Voltage Gain300k V/V DC Supply Current(when enabled)V CC=6.0V250µA Response Time100mV Overdrive60100140ns500mV Overdrive80125165ns1000mV Overdrive135215300ns Note7:For comparator output current characteristics see L-Port specs.Typical Performance Characteristics for COP820CJDynamic—I DD vs V CC(Crystal Clock Option)DS011208-32Halt—I DD vs V CC(Brown Out Disabled)DS011208-33Halt—I DD vs V CC(Brown Out Enabled)DS011208-34Ports L/G WeakPull-Up Source CurrentDS011208-35Ports L/G Push-PullSource CurrentDS011208-36Ports L/G Push-PullSink CurrentDS011208-37COP820CJ/COP840CJFamily7Typical Performance Characteristics for COP820CJ(Continued)Typical Performance Characteristics for COP840CJPorts L4–L7Sink CurrentDS011208-38Port D Source CurrentDS011208-39Port D Sink CurrentDS011208-40Brown Out Voltage vs TemperatureDS011208-41Port D Sink currentDS011208-42Halt Current with Brown Out DisabledDS011208-43Halt Current with Brown Out EnabledDS011208-44C O P 820C J /C O P 840C J F a m i l y 8Typical Performance Characteristics for COP840CJ(Continued)Halt Current with Comparator EnabledDS011208-45Ports L/G Push-Pull Source CurrentDS011208-46Ports L/G Push-Pull Sink CurrentDS011208-47Port D Source Current DS011208-48Port D Sink CurrentDS011208-49Brown Out Voltage vs TemperatureDS011208-50COP820CJ/COP840CJ Family9Pin DescriptionV CC and GND are the power supply pins.CKI is the clock input.This can come from an external source,a R/C generated oscillator or a crystal (in conjunc-tion with CKO).See Oscillator description.RESET is the master reset input.See Reset description.PORT I is a 4-bit Hi-Z input port.PORT L is an 8-bit I/O port.There are two registers associated with the L port:a data register and a configuration register.Therefore,each L I/O bit can be individually configured under software control as shown below:Port L Port L Port L Config.Data Setup00Hi-Z Input (TRI-STATE)01Input with Weak Pull-up 10Push-pull Zero Output 11Push-pull One OutputThree data memory address locations are allocated for this port,one each for data register [00D0],configuration register [00D1]and the input pins [00D2].Port L has the following alternate features:L7MIWU or MODOUT (high sink current capability)L6MIWU (high sink current capability)L5MIWU (high sink current capability)L4MIWU (high sink current capability)L3MIWUL2MIWU or CMPIN+L1MIWU or CMPIN−L0MIWU or CMPOUTThe selection of alternate Port L functions is done through registers WKEN [00C9]to enable MIWU and CNTRL2[00CC]to enable comparator and modulator.All eight L-pins have Schmitt Triggers on their inputs.PORT G is an 8-bit port with 6I/O pins (G0–G5)and 2input pins (G6,G7).All eight G-pins have Schmitt Triggers on the inputs.There are two registers associated with the G port:a data register and a configuration register.Therefore each G port bit can be individually configured under software control as shown below:Port G Port G Port G Config.Data Setup00Hi-Z Input (TRI-STATE)01Input with Weak Pull-up 10Push-pull Zero Output 11Push-pull One OutputThree data memory address locations are allocated for this port,one for data register [00D4],one for configuration reg-ister [00D5]and one for the input pins [00D6].Since G6and G7are Hi-Z input only pins,any attempt by the user to con-figure them as outputs by writing a one to the configuration register will be disregarded.Reading the G6and G7configu-ration bits will return zeros.Note that the device will be placed in the Halt mode by writing a “1”to the G7data bit.Six pins of Port G have alternate features:G7CKO crystal oscillator output (selected by mask option)or HALT restart input/general purpose input (if clock option is R/C or external clock)G6SI (MICROWIRE serial data input)G5SK (MICROWIRE clock I/O)G4SO (MICROWIRE serial data output)G3TIO (timer/counter input/output)G0INTR (an external interrupt)Pins G2and G1currently do not have any alternate func-tions.The selection of alternate Port G functions are done through registers PSW [00EF]to enable external interrupt and CN-TRL1[00EE]to select TIO and MICROWIRE operations.PORT D is a four bit output port that is preset when RESET goes low.One data memory address location is allocated for the data register [00DC].Note:Care must be exercised with the D2pin operation.At RESET,the ex-ternal loads on this pin must ensure that the output voltages stay above 0.8V CC to prevent the chip from entering special modes.Also keep the external loading on D2to less than 1000pF.Functional DescriptionThe internal architecture is shown in the block diagram.Data paths are illustrated in simplified form to depict how the vari-ous logic elements communicate with each other in imple-menting the instruction set of the device.ALU and CPU RegistersThe ALU can do an 8-bit addition,subtraction,logical or shift operations in one cycle time.There are five CPU registers:A is the 8-bit Accumulator registerPC is the 15-bit Program Counter registerPU is the upper 7bits of the program counter (PC)PL is the lower 8bits of the program counter (PC)B is the 8-bit address register and can be auto incre-mented or decremented.X is the 8-bit alternate address register and can be autoincremented or decremented.SP is the 8-bit stack pointer which points to the subroutinestack (in RAM).B,X and SP registers are mapped into the on chip RAM.The B and X registers are used to address the on chip RAM.The SP register is used to address the stack in RAM during sub-routine calls and returns.The SP must be preset by software upon initialization.MemoryThe memory is separated into two memory spaces:program and data.PROGRAM MEMORYProgram memory consists of 1024x 8ROM or 2048x 8ROM.These bytes of ROM may be instructions or constant data.The memory is addressed by the 15-bit program counter (PC).ROM can be indirectly read by the LAID in-struction for table lookup.DATA MEMORYThe data memory address space includes on chip RAM,I/O and registers.Data memory is addressed directly by the in-struction or indirectly through B,X and SP registers.The de-vice has 64or 128bytes of RAM.Sixteen bytes of RAM areC O P 820C J /C O P 840C J F a m i l y10Memory(Continued)mapped as“registers”,these can be loaded immediately, decremented and tested.Three specific registers:X,B,and SP are mapped into this space,the other registers are avail-able for general usage.Any bit of data memory can be directly set,reset or tested. All I/O and registers(except A and PC)are memory mapped; therefore,I/O bits and register bits can be directly and indi-vidually set,reset and tested,except the write once only bit (WDREN,WATCHDOG Reset Enable),and the unused and read only bits in CNTRL2and WDREG registers.Note:RAM contents are undefined upon power-up.ResetEXTERNAL RESETThe RESET input pin when pulled low initializes the micro-controller.The user must insure that the RESET pin is held low until V CC is within the specified voltage range and the clock is stabilized.An R/C circuit with a delay5x greater than the power supply rise time is recommended(Figure4). The device immediately goes into reset state when the RE-SET input goes low.When the RESET pin goes high the de-vice comes out of reset state synchronously.The device will be running within two instruction cycles of the RESET pin go-ing high.The following actions occur upon reset:Port L TRI-STATEPort G TRI-STATEPort D HIGHPC CLEAREDRAM Contents RANDOM with Power-On-ResetUNAFFECTED with externalReset(power already applied) B,X,SP Same as RAMPSW,CNTRL1,CNTRL2and WDREG Reg.CLEAREDMulti-Input WakeupReg.WKEDG,WKEN CLEAREDWKPND UNKNOWNData and ConfigurationRegisters for L&G CLEAREDWATCHDOG Timer Prescaler/Counter eachloaded with FFThe device comes out of the HALT mode when the RESET pin is pulled low.In this case,the user has to ensure that the RESET signal is low long enough to allow the oscillator to re-start.An internal256t c delay is normally used in conjunction with the two pin crystal oscillator.When the device comes out of the HALT mode through Multi-Input Wakeup,this de-lay allows the oscillator to stabilize.The following additional actions occur after the device comes out of the HALT mode through the RESET pin.If a two pin crystal/resonator oscillator is being used:RAM Contents UNCHANGEDTimer T1and A Contents UNKNOWN WATCHDOG Timer Prescaler/Counter ALTEREDIf the external or RC Clock option is being used:RAM Contents UNCHANGEDTimer T1and A Contents UNCHANGED WATCHDOG Timer Prescaler/Counter ALTEREDThe external RESET takes priority over the Brown Out Re-set.Note:If the RESET pin is pulled low while Brown Out occurs(Brown Out cir-cuit has detected Brown Out condition),the external reset will not oc-cur until the Brown Out condition is removed.External reset has prior-ity only if V CC is greater than the Brown Out voltage.WATCHDOG RESETWith WATCHDOG enabled,the WATCHDOG logic resetsthe device if the user program does not service the WATCH-DOG timer within the selected service window.The WATCH-DOG reset does not disable the WATCHDOG.Upon WATCHDOG reset,the WATCHDOG Prescaler and Counterare each initialized with FF Hex.The following actions occur upon WATCHDOG reset that are different from external reset.WDREN WATCHDOG Reset Enable bit UNCHANGED WDUDFWATCHDOG Underflow bitUNCHANGEDAdditional initialization actions that occur as a result of WATCHDOG reset are as follows:Port L TRI-STATEPort G TRI-STATEPort D HIGHPC CLEAREDRAM Contents UNCHANGED/RANDOMB,X,SP UNCHANGEDPSW,CNTRL1andCNTRL2(except WDUDFBit)RegistersCLEAREDMulti-Input WakeupRegistersWKEDG,WKEN CLEAREDWKPND UNKNOWNData and ConfigurationRegisters for L&G CLEAREDWATCHDOG Timer Prescalar/Countereach loaded with FFDS011208-51RC>5x Power Supply Rise TimeFIGURE4.Recommended Reset CircuitCOP820CJ/COP840CJFamilyReset(Continued)BROWN OUT RESETThe on-board Brown Out protection circuit resets the device when the operating voltage (V CC )is lower than the Brown Out voltage.The device is held in reset when V CC stays be-low the Brown Out Voltage.The device will remain in RESET as long as V CC is below the Brown Out Voltage.The Device will resume execution if V CC rises above the Brown Out Volt-age.If a two pin crystal/resonator clock option is selected,the Brown Out reset will trigger a 256tc delay.This delay al-lows the oscillator to stabilize before the device exits the re-set state.The delay is not used if the clock option is either R/C or external clock.The contents of data registers and RAM are unknown following a Brown Out reset.The external reset takes priority over Brown Out Reset and will deactivate the 256t c cycles delay if in progress.The Brown Out reset takes priority over the WATCHDOG reset.The following actions occur as a result of Brown Out reset:Port L TRI-STATE Port G TRI-STATE Port D HIGH PCCLEARED RAM Contents RANDOM B,X,SPUNKNOWNPSW,CNTRL1,CNTRL2and WDREG Registers CLEARED Multi-Input Wakeup Registers WKEDG,WKEN CLEARED WKPNDUNKNOWN Data and Configuration Registers for L &G CLEAREDWATCHDOG Timer Prescalar/Counter each loaded with FFTimer T1and AccumulatorUnknown data after coming out of the HALT (through Brown Out Reset)with any Clock option Note 8:The development system will detect the BROWN OUT RESET ex-ternally and will force the RESET pin low.The Development System does not emulate the 256tc delay.Brown Out DetectionAn on-board detection circuit monitors the operating voltage (V CC )and compares it with the minimum operating voltage specified.The Brown Out circuit is designed to reset the de-vice if the operating voltage is below the Brown Out voltage (between 1.8V to 4.2V at −40˚C to +85˚C).The Minimum op-erating voltage for the device is 2.5V with Brown Out dis-abled,but with BROWN OUT enabled the device is guaran-teed to operate properly down to minimum Brown Outvoltage (Max frequency 4MHz),For temperature range of 0˚C to 70˚C the Brown Out voltage is expected to be be-tween 1.9V to 3.9V.The circuit can be enabled or disabled by Brown Out mask option.If the device is intended to oper-ate at lower V CC (lower than Brown Out voltage VBO max),the Brown Out circuit should be disabled by the mask option.The Brown Out circuit may be used as a power-up reset pro-vided the power supply rise time is slower than 50µs (0V to 6.0V).Brown Out should not be used at frequencies over 4MHz (COP840CJ).Note:Brown Out Circuit is active in HALT mode (with the Brown Out maskoption selected).Oscillator CircuitsEXTERNAL OSCILLATORCKI can be driven by an external clock signal provided it meets the specified duty cycle,rise and fall times,and input levels.G7/CKO is available as a general purpose input G7and/or Halt control.CRYSTAL OSCILLATORBy selecting G7/CKO as a clock output,CKI and G7/CKO can be connected to create a crystal controlled oscillator.Table 1shows the component values required for various standard crystal values.R/C OSCILLATOR (COP820CJ)For COP820CJ,selecting CKI as a single pin oscillator,CKI can make a R/C oscillator.G7/CKO is available as a general purpose input and/or HALT control.Table 2shows variation in the oscillator frequencies as functions of the component (R and C)values.TABLE 1.Crystal Oscillator ConfigurationR1R2C1C2CKI Freq.Conditions (k Ω)(M Ω)(pF)(pF)(MHz)013030–3610V CC =5V 013030–364V CC =5V 5.61100/200100–1560.455V CC =5VDS011208-7FIGURE 5.Clock Oscillator ConfigurationsC O P 820C J /C O P 840C J F a m i l yReset(Continued)TABLE2.R/C Oscillator Configuration(Part-To-Part Variation)R C CK1Freq.Instr.CycleConditions (kΩ)(pF)(MHz)(µs)3.382 2.2to2.7 3.7to4.6V CC=5V5.6100 1.1to1.37.4to9.0V CC=5V6.81000.9to1.18.8to10.8V CC=5VR/C OSCILLATOR(COP840CJ)For COP840CJ,selecting the R/C oscillator option makes a R/C oscillator when connecting a resistor from the CKI pin to V.The capacitor is on-chip.The G7/CKO pin is available as a general purpose input G7and/or Halt control.Adding an external capacitor will jeopardize the clock frequency toler-ance and increase EMI emissions.Table3shows the clock frequency for the different resistor values.TABLE3.RC Oscillator Configuration(Part-To-Part Variation)R(kΩ)CK1Freq.(MHz)Temperature V CC2.27.0±15%-40˚C to+85˚C 4.5V to5.5V4.7 4.2±10%-40˚C to+85˚C 4.5V to5.5V20.07.1±10%-40˚C to+85˚C 4.5V to5.5VNote9:The resistance level is calculated with a total of5.3pF capacitance added from the printed circuit board.It is important to take this into account when figuring the clock frequency.HALT ModeThe device is a fully static device.The device enters the HALT mode by writing a one to the G7bit of the G data reg-ister.Once in the HALT mode,the internal circuitry does not receive any clock signal and is therefore frozen in the exact state it was in when halted.In this mode,the chip will only draw leakage current(output current and DC current due to the Brown Out circuit if Brown Out is enabled).The device supports four different methods of exiting the HALT mode.The first method is with a low to high transition on the CKO(G7)pin.This method precludes the use of the crystal clock configuration(since CKO is a dedicated out-put).It may be used either with an RC clock configuration or an external clock configuration.The second method of exit-ing the HALT mode is with the multi-Input Wakeup feature on the L port.The third method of exiting the HALT mode is by pulling the RESET input low.The fourth method is with the operating voltage going below Brown Out voltage(if Brown Out is enabled by mask option).If the two pin crystal/resonator oscillator is being used and Multi-Input Wakeup or Brown Out causes the device to exit the HALT mode,the WAKEUP signal does not allow the chip to start running immediately since crystal oscillators have a delayed start up time to reach full amplitude and freuqency stability.The WATCHDOG timer(consisting of an8-bit pres-caler followed by an8-bit counter)is used to generate a fixed delay of256tc to ensure that the oscillator has indeed stabi-lized before allowing instruction execution.In this case,upon detecting a valid WAKEUP signal only the oscillator circuitry is enabled.The WATCHDOG Counter and Prescaler are each loaded with a value of FF Hex.The WATCHDOG pres-caler is clocked with the t c instruction cycle.(The t c clock is derived by dividing the oscillator clock down by a factor of 10).The Schmitt trigger following the CKI inverter on the chip ensures that the WATCHDOG timer is clocked only when the oscillator has a sufficiently large amplitude to meet the Schmitt trigger specs.This Schmitt trigger is not part of the oscillator closed loop.The start-up timeout from the WATCH-DOG timer enables the clock signals to be routed to the rest of the chip.The delay is not activated when the device comes out of HALT mode through RESET pin.Also,if the clock option is either RC or External clock,the delay is notused,but the WATCHDOG Prescaler/Counter contents are changed.The Development System will not emulate the256tc delay.The RESET pin or Brown Out will cause the device to resetand start executing from address X’0000.A low to high tran-sition on the G7pin(if single pin oscillator is used)orMulti-Input Wakeup will cause the device to start executingfrom the address following the HALT instruction.When RESET pin is used to exit the device from the HALTmode and the two pin crystal/resonator(CKI/CKO)clock op-tion is selected,the contents of the Accumulator and theTimer T1are undetermined following the reset.All other in-formation except the WATCHDOG Prescaler/Counter con-tents is retained until continuing.If the device comes out ofthe HALT mode through Brown Out reset,the contents ofdata registers and RAM are unknown following the reset.All information except the WATCHDOG Prescaler/Counter con-tents is retained if the device exits the HALT mode throughG7pin or Multi-Input Wakeup.G7is the HALT-restart pin,but it can still be used as an input.If the device is not halted,G7can be used as a general pur-pose input.If the Brown Out Enable mask option is selected,the BrownOut circuit remains active during the HALT mode causing ad-ditional current to be drawn.Note:To allow clock resynchronization,it is necessary to program two NOP’s immediately after the device comes out of the HALT mode.The usermust program two NOP’s following the“enter HALT mode”(set G7data bit)instruction.MICROWIRE/PLUSMICROWIRE/PLUS is a serial synchronous bidirectional communications interface.The MICROWIRE/PLUS capabil-ity enables the device to interface with any of National Semi-conductor’s MICROWIRE peripherals(i.e.A/D converters,display drivers,EEPROMS,etc.)and with other microcon-trollers which support the MICROWIRE/PLUS interface.It consists of an8-bit serial shift register(SIO)with serial dataCOP820CJ/COP840CJFamily。
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ParameterMax.UnitsV CESCollector-to-Emitter Voltage 600VI C @ T C = 25°C Continuous Collector Current 16I C @ T C = 100°C Continuous Collector Current 9.0I CM Pulsed Collector Current Q32AILMClamped Inductive Load Current R 32I F @ T C = 100°C Diode Continuous Forward Current 7.0I FM Diode Maximum Forward Current 32t sc Short Circuit Withstand Time 10µs V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 60P D @ T C = 100°C Maximum Power Dissipation 24T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf•in (1.1 N•m)IRG4BC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEFeaturesV CES = 600VV CE(on) typ. = 2.27V@V GE = 15V, I C = 9.0AShort Circuit RatedUltraFast IGBT4/24/2000• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, V GE = 15V • Generation 4 IGBT design provides tighterparameter distribution and higher efficiency than previous generation• IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations• Industry standard TO-220AB packageBenefitsPD -91599AParameter Min.Typ.Max.UnitsR θJC Junction-to-Case - IGBT –––––– 2.1R θJC Junction-to-Case - Diode–––––– 3.5°C/WR θCS Case-to-Sink, flat, greased surface–––0.50–––R θJA Junction-to-Ambient, typical socket mount ––––––80WtWeight–––2 (0.07)–––g (oz)Thermal ResistanceAbsolute Maximum RatingsW• Latest generation 4 IGBTs offer highest power density motor controls possible• HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses• This part replaces the IRGBC20KD2 and IRGBC20MD2 products• For hints see design tip 97003 1IRG4BC20KDParameter Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)—3451I C = 9.0A Q ge Gate - Emitter Charge (turn-on)— 4.97.4nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on)—1421V GE = 15V t d(on)Turn-On Delay Time —54—t r Rise Time —34—T J = 25°Ct d(off)Turn-Off Delay Time —180270I C = 9.0A, V CC = 480V t f Fall Time —72110V GE = 15V, R G = 50ΩE on Turn-On Switching Loss —0.34—Energy losses include "tail"E off Turn-Off Switching Loss —0.30—mJ and diode reverse recovery E ts Total Switching Loss —0.640.96See Fig. 9,10,14t sc Short Circuit Withstand Time 10——µs V CC = 360V, T J = 125°CV GE = 15V, R G = 50Ω , V CPK < 500Vt d(on)Turn-On Delay Time —51—T J = 150°C,See Fig. 11,14t rRise Time—37—I C = 9.0A, V CC = 480Vt d(off)Turn-Off Delay Time —220—V GE = 15V, R G = 50Ωt f Fall Time—160—Energy losses include "tail"E ts Total Switching Loss—0.85—mJ and diode reverse recovery L E Internal Emitter Inductance —7.5—nH Measured 5mm from package C ies Input Capacitance —450—V GE = 0V C oes Output Capacitance—61—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance —14—ƒ = 1.0MHz t rr Diode Reverse Recovery Time —3755ns T J = 25°C See Fig.—5590T J = 125°C 14 I F = 8.0A I rr Diode Peak Reverse Recovery Current — 3.5 5.0A T J = 25°C See Fig.— 4.58.0T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge —65138nC T J = 25°C See Fig.—124360T J = 125°C 16 di/dt = 200Aµs di (rec)M /dtDiode Peak Rate of Fall of Recovery —240—A/µs T J = 25°C See Fig.During t b—210—T J = 125°C 17Parameter Min.Typ.Max.Units ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage S 600——V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage —0.49—V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage — 2.27 2.8I C = 9.0A V GE = 15V— 3.01—V I C = 16ASee Fig. 2, 5— 2.43—I C = 9.0A, T J = 150°C V GE(th)Gate Threshold Voltage 3.0— 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage —-10—mV/°CV CE = V GE , I C = 250µA g feForward Transconductance T 2.9 4.3—S V CE = 100V, I C = 9.0A I CES Zero Gate Voltage Collector Current ——250µAV GE = 0V, V CE = 600V——1000V GE = 0V, V CE = 600V, T J = 150°C V FM Diode Forward Voltage Drop — 1.4 1.7VI C = 8.0A See Fig. 13— 1.3 1.6I C = 8.0A, T J = 150°C I GES Gate-to-Emitter Leakage Current ——±100nAV GE = ±20VSwitching Characteristics @ T J = 25°C (unless otherwise specified)Electrical Characteristics @ T J = 25°C (unless otherwise specified)nsnsIRG4BC20KD 3Fig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4BC20KDFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4BC20KD 5Fig. 7 - Typical Capacitance vs.Collector-to-Emitter VoltageFig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageFig. 9 - Typical Switching Losses vs. GateResistance Fig. 10 - Typical Switching Losses vs.Junction TemperatureCollector-to-Emitter CurrentFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current0.11101000.40.81.21.62.02.42.83.2FM F I n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A )Forward Voltage Drop - V (V)IRG4BC20KD 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt1002003004005001001000fdi /dt - (A/µs)R R Q - (n C )1001000100001001000fdi /dt - (A/µs)d i (r e c )M /d t - (A /µs )204060801001001000fdi /dt - (A/µs)t - (n s)r r 1101001001000fdi /dt - (A/µs)I - (A )I RR MIRG4BC20KDFig. 18a - Test Circuit for Measurement ofI LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t ft1t2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrIRG4BC20KD 9V g G A T E S IG NA LDE V ICE U NDE R T E S TCUR RE N T D.U.T.V O LT A G E IN D.U.T.CUR RE N T IN D1t0t1t2Figure 19. Clamped Inductive Load TestCircuit Figure20. Pulsed Collector CurrentTest Circuit=480V4 X I C @25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitIRG4BC20KDNotes:Q Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)R V CC =80%(V CES ), V GE =20V, L=10µH, R G = 50Ω (figure 19)S Pulse width ≤ 80µs; duty factor ≤ 0.1%.T Pulse width 5.0µs, single shot.Case Outline TO-220AB0.55 (.022)0.46 (.018)3 X2.92 (.115)2.64 (.104)1.32 (.052)1.22 (.048)- B -4.69 (.185)4.20 (.165)3.78 (.149)3.54 (.139)- A -6.47 (.255)6.10 (.240)1.15 (.045) M IN4.06 (.160)3.55 (.140)3 X3.96 (.160)3.55 (.140)3 X 0.93 (.037)0.69 (.027)0.36 (.014) M B A M10.54 (.415)10.29 (.405)2.87 (.113)2.62 (.103)15.24 (.600)14.84 (.584)14.09 (.555)13.47 (.530)1.40 (.055)1.15 (.045)3 X2.54 (.100)2X1 2 34CONFORMS TO JEDEC OUTLINE TO-220ABD im e ns io ns in M illim e ters a nd (In c he s)LE A D A S S IG N M E N T S 1 - G A TE2 - C O LLE C TO R3 - EM IT TE R4 - C O LLE C TO RN O TE S :1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14.5M , 1982.2 C O N TR O LLIN G D IM E N S IO N : IN C H.3 D IM E N S IO N S A R E S H O W N M ILLIM E TE R S (IN C HES ).4 C O N FO R M S TO JE D E C O U TLIN E T O -220AB.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936Data and specifications subject to change without notice. 10/00元器件交易网Note: For the most current drawings please refer to the IR website at:/package/。