P-N 接面二极体 P-N Junction Diode
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P-N
P-N Junction Diode
P
N
P-N
P-N
Junction diodeP
N
Depletion
regionSpacecharge r
egionò
N
P
N
P
P
N
Potential barrier 0.2~0.3V Si P-N
Ge P-N 0.6~0.7V
10-4
P
-N
PN Forward bias
P P-N
N N
P-N
P
ID = Is(ekVD/ TK − 1)
Is k=11,600 =1 for Ge =2
for Si
10-5
NOTE
VT V
P
-N
T=0.7V Si VT=0.3V Ge
PN
Reverse bias
ê
P Reverse current
-N P-N
Is
Zener potential Vz
Avalanche来自百度文库breakdown Zener breakdown
10-6
q
q Is
P
-N
P
-N
Terminal characteristics
V
T
rav
10-7
rav VT
P
-N
10-8
P-N Junction Diode
P
N
P-N
P-N
Junction diodeP
N
Depletion
regionSpacecharge r
egionò
N
P
N
P
P
N
Potential barrier 0.2~0.3V Si P-N
Ge P-N 0.6~0.7V
10-4
P
-N
PN Forward bias
P P-N
N N
P-N
P
ID = Is(ekVD/ TK − 1)
Is k=11,600 =1 for Ge =2
for Si
10-5
NOTE
VT V
P
-N
T=0.7V Si VT=0.3V Ge
PN
Reverse bias
ê
P Reverse current
-N P-N
Is
Zener potential Vz
Avalanche来自百度文库breakdown Zener breakdown
10-6
q
q Is
P
-N
P
-N
Terminal characteristics
V
T
rav
10-7
rav VT
P
-N
10-8