SOP8Plastic-EncapsulateMOSFETS-长电科技

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4435 P-Channel Power MOSFET
DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent R DS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion.
APPLICATIONS
z Battery Switch z Load Switch
MARKING
Q4435= Device code
Solid dot=Pin1 indicator
Solid dot = Green molding compound device,
if none, the normal device
Front side YY=Date Code
MAXIMUM RATINGS ( T a =25℃ unless otherwise noted )
Parameter Symbol Limit Unit
Drain-Source Voltage V DS
-30
V
Gate-Source Voltage V GS ±20 V Continuous Drain Current I D -9.1 A Pulsed Drain Current
I DM -36 A Single Pulsed Avalanche Energy E AS (1) 20 mJ Power Dissipation
P D 1.4 W Thermal Resistance from Junction to Ambient R θJA 89 ℃/W Junction Temperature T J 150 ℃ Storage Temperature Range
T stg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) T L 260 ℃
(1).E AS condition: V DD =-50V,L=0.5mH, R G =25Ω, Starting T J = 25°C
ELECTRICAL CHARACTERISTICS(T a =25℃ unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
Off characteristics
Drain-source breakdown voltage V (BR) DSS V GS = 0V, I D =-250µA -30
V Zero gate voltage drain current I DSS V DS =-30V, V GS =0V -1 µA Gate-body leakage current I GSS
V DS =0V, V GS =±20V
±100
nA
On characteristics (note1) Gate-threshold voltage
V GS(th) V DS =V GS , I D =-250µA -1.0 -3.0 V V GS =-10V, I D =-9.1A 24 m Ω Static drain-source on-sate resistance R DS(on)
V GS =-4.5V, I D =-6.9A 35 m Ω Forward transconductance
g FS
V DS =-10V, I D =-9.1A
20
S
Dynamic characteristics (note 2) Input capacitance C iss 1350 Output capacitance
C oss 215 Reverse transfer capacitance C rss
V DS =-15V,V GS =0V, f =1MHz
185
pF
Switching characteristics (note 2)
V DS =-15V, V GS =-10V,
I D =-9.1A
50 Total gate charge
Q g
25 Gate-source charge Q gs 4 Gate-drain charge Q gd V DS =-15V, V GS =-4.5V, I D =-9.1A
7.5 nC Turn-on delay time t d (on) 15 Turn-on rise time t r 15
Turn-off delay time t d(off) 70 Turn-off fall time t f V DD =-15V,I D =-1A, V GS =-10V,R G =1Ω, R L =15Ω
25
ns
Gate Resistance
R g
f =1MHz, V DS =0V, V GS =0V,
5.8 Ω
Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) V SD V GS =0V, I S =-2A
-1.2 V
Continuous drain-source diode forward current
I S -9.1 A Pulsed drain-source diode forward current I SM
-36 A
Notes: 1. Pulse Test : Pulse Width ≤300µs, duty cycle ≤2%. 2.
Guaranteed by design, not subject to production testing.
255075100125-0.2-0.4-0.6-0.8-1.0
JUNCTION TEMPERATURE T
J ()
℃SOURCE TO DRAIN VOLTAGE V
SD
(V)
SO P8 Suggested Pad Layout
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SO P8 Tape and Reel。