ULN2003A中文资料_数据手册_参数

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ULN2003A中文说明

ULN2003A中文说明
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ULN2002A 最 小
-
最 大
-
典型 最大 13 V
VI(on)
6 5
VCE=2V, IC =300mA II=250μA,IC=100mA
-
-
VCE(sat) Collector-emitter
0.9 1.1 -
0.9 1.1 V
saturation voltage 集电极 -发射极饱和电压 VF Clamp forward voltage 正向钳位电压 Collector cutoff current 集电极截止电流 Off state input current 关 闭状态下输入电流 Input current 输入电流 Clamp reverse current 反向钳位电流 8 1 ICEX 2
-
1
1.3 -
1
1.3
1.2 1.6 1.7 2
-
1.2 1.6 1.7 2
-
V μA
-
50 100 -
50 100 500
-
VI=6V 50
-
-
-
-
II(off) II IR
3 4
65 -
50 65
-
μA
0.82 1.25 mA
-
100 50 -
100 50
-
μA
hFE
Static forward-current transfer ratio 静态正向电 5 流传输比 Input capacitance 输入电 容
-
15
15
pF
electrical characteristics, 电气特性( 除非另有说明) TA = 25℃ (unless otherwise noted) 测 PARAMETER 参数 试 图 TEST CONDITIONS 测试 条件 IC=125mA IC=200mA VI(on) On state input voltage 6 VCE=2V 输入电压 IC=250mA IC=275mA IC=300mA IC=350mA II = 250μA, IC=100mA ittCollector-emitter VCE(sat) saturation voltage 集电 5 II = 350μA, IC =200mA 极发射极饱和电压 II = 500μA, IC=350mA ICEX Collector cutoff current 集电极截止电流 Clamp forward voltage 正向钳位电压 Off state input current 关闭状态下输入电流 1 VCE = 50V, II = 0 22 VCE=50V 8 IF =350mA 3 VCE =50V, IC=500μA VI = 3.85V II Input current 输入电流 4 VI = 5V VI = 12V IR Ci Clamp reverse current 反向钳位电流 Input capacitance 输入 电容 7

hgsemi ULN2003A达林顿阵列功率驱动集成电路产品说明书

hgsemi ULN2003A达林顿阵列功率驱动集成电路产品说明书

达林顿阵列功率驱动集成电路产品说明书是高耐压、大电流达林顿陈列,由七个硅NPN 达林顿管组成。

所有单元共用发射极,每个单元采用开集电极输出。

为了提高输出效率,减小漏电,单元内部设计了镇流二极管以及适当的基—射极电阻。

SC2003的每一对达林顿都串联了一个2.7K 的基极电阻,在5V 的工作电压下能与TTL 和CMOS 电路兼容,可以直接处理原先需要标准逻辑缓冲器来处理的数据。

工作电压高,工作电流大,灌电流可达500mA ,并且能够在关态时承受50V 的电压,输出还可以在高负载电流下并行运行,很好的提供了需要多接口驱动电路的解决方案。

应用领域包括电磁阀、继电器、直流照明灯、小型电机以及LED 的驱动。

一、特点:1、七路高增益达林顿阵列;2、输出电压高(可达50V );3、输出电流大(可达350mA );4、可与TTL 、CMOS 、PMOS 直接连接;5、为感性负载设置了续流二极管;6、工作温度范围宽。

二、电路框图:ULN2003AULN2003A ULN2003A逻辑图三、极限参数:表1.极限参数存储温度:-65℃~150℃工作温度范围:-40℃~85℃结温度范围:-40℃~150℃输入电压:-0.3V~30V输出电压:55V 射极到基极的最高耐压: 6.0V 集电极持续工作电流:500mA 基极持续工作电流:25mAULN2003A四、电参数:表2.电参数(除非特殊说明:V+=5V,Ta=25℃)注:1、极限值是指超出该范围,器件有可能被损坏,并非器件的正常工作条件范围。

电参数表提供了器件的工作条件范围;2、除特别指明外,所有条件适用于达林顿阵列;3、通常条件下,每路输出在70°C、VCE(Sat)=1.6V下脉冲宽度为20ms的持续工作符号参数测试条件最小值典型值最大值单位I CEX 输出管漏电流TA=25°C,VCE=50V(图1)20μATA=85°C,VCE=50V(图1)100VCE(Sat)CE饱和压降IC=350mA,IB=500μA(图3)(Note3)1.30 1.6V IC=200mA,IB=350μA(图3)1.1 1.3IC=100mA,IB=250μA(图3)0.9 1.1II(ON)开态输入电流VI=3.85V(图4)0.93 1.35mAII(OFF)关态输入电流(Note4)IC=500μA(图5)50100μA TA=+25°C50100TA=+85°C2550VI(ON)输入电压(Note5)VCE=2.0V,IC=200mA(图6) 2.4V VCE=2.0V,IC=250mA(图6) 2.7VCE=2.0V,IC=300mA(图6) 3.0CI输入电容1530pFt PLH 导通延迟时间0.5VIto0.5VO1.0μst PHL 关断延迟时间0.5VIto0.5VO1.0IR嵌位二极管漏电流VR=50V(图7)μA TA=25°C510TA=85°C1050VF嵌位二极管正向压降IF=350mA(图8) 1.7 2.0V电流为350mA。

ULN2003A

ULN2003A

ULN2003A引脚图及功能一、集成电路简介:ULN是集成达林顿管IC,内部还集成了一个消线圈反电动势的二极管,可用来驱动继电器。

它是双列16脚封装,NPN晶体管矩阵,最大驱动电压=50V,电流=500mA,输入电压=5V,适用于TTL COMS,由达林顿管组成驱动电路。

ULN是集成达林顿管IC,内部还集成了一个消线圈反电动势的二极管,它的输出端允许通过电流为200mA,饱和压降VCE 约1V左右,耐压BVCEO 约为36V。

用户输出口的外接负载可根据以上参数估算。

采用集电极开路输出,输出电流大,故可直接驱动继电器或固体继电器,也可直接驱动低压灯泡。

通常单片机驱动ULN2003时,上拉2K的电阻较为合适,同时,COM引脚应该悬空或接电源。

ULN2003是一个非门电路,包含7个单元,但独每个单元驱动电流最大可达350mA.资料的最后有引用电路,9脚可以悬空。

比如1脚输入,16脚输出,你的负载接在VCC与16脚之间,不用9脚。

二、ULN2003的特点及作用ULN2003是大电流驱动阵列,多用于单片机、智能仪表、PLC、数字量输出卡等控制电路中,可直接驱动继电器等负载。

输入5VTTL电平,输出可达500mA/50V。

ULN2003是高耐压、大电流达林顿陈列,由七个硅NPN达林顿管组成。

该电路的特点如下: ULN2003的每一对达林顿都串联一个2.7K的基极电阻,在5V的工作电压下它能与TTL和CMOS电路直接相连,可以直接处理原先需要标准逻辑缓冲器。

ULN2003 是高压大电流达林顿晶体管阵列系列产品,具有电流增益高、工作电压高、温度范围宽、带负载能力强等特点,适应于各类要求高速大功率驱动的系统。

三、ULN2003A引脚图及功能ULN2003 是高耐压、大电流、内部由七个硅NPN 达林顿管组成的驱动芯片。

经常在以下电路中使用,作为:1、显示驱动2、继电器驱动3、照明灯驱动4、电磁阀驱动5、伺服电机、步进电机驱动等电路中。

ULN2003AD中文资料

ULN2003AD中文资料

PACKAGING INFORMATIONOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)ULN2001AD OBSOLETE SOIC D16TBD Call TI Call TIULN2001ADR OBSOLETE SOIC D16TBD Call TI Call TIULN2001AN OBSOLETE PDIP N16TBD Call TI Call TIULN2002AD OBSOLETE SOIC D16TBD Call TI Call TIULN2002AN ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NCULN2002ANE4ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NCULN2003AD ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003ADE4ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003ADR ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003ADRE4ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003AJ OBSOLETE CDIP J16TBD Call TI Call TIULN2003AN ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NCULN2003ANE4ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NCULN2003ANSR ACTIVE SO NS162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003ANSRE4ACTIVE SO NS162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003ANSRG4ACTIVE SO NS162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003APW ACTIVE TSSOP PW1690Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003APWE4ACTIVE TSSOP PW1690TBD Call TI Call TIULN2003APWG4ACTIVE TSSOP PW1690Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003APWR ACTIVE TSSOP PW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003APWRE4ACTIVE TSSOP PW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2004AD ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2004ADE4ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2004ADR ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2004ADRE4ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2004AN ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NCULN2004ANE4ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NCOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)ULN2004ANSR ACTIVE SO NS162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2004ANSRG4ACTIVE SO NS162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULQ2003AD ACTIVE SOIC D1640Pb-Free(RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIMULQ2003ADR ACTIVE SOIC D162500Pb-Free(RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIMULQ2003AN ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NCULQ2004AD ACTIVE SOIC D1640Pb-Free(RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIMULQ2004ADR ACTIVE SOIC D162500Pb-Free(RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIMULQ2004AN ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NC(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-The planned eco-friendly classification:Pb-Free(RoHS)or Green(RoHS&no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all6substances,including the requirement that lead not exceed0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green(RoHS&no Sb/Br):TI defines"Green"to mean Pb-Free(RoHS compatible),and free of Bromine(Br)and Antimony(Sb)based flame retardants(Br or Sb do 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ULN2003A引脚图及功能

ULN2003A引脚图及功能

ULN2003集成达林顿管ULN是集成达林顿管IC,内部还集成了一个消线圈反电动势的二极管,可用来驱动继电器。

它是双列16脚封装,NPN晶体管矩阵,最大驱动电压=50V,电流=500mA,输入电压=5V,适用于TTL COMS,由达林顿管组成驱动电路。

内部还集成了一个消线圈反电动势的二极管,它的输出端允许通过电流为200mA,饱和压降VCE 约1V左右,耐压BVCEO 约为36V。

用户输出口的外接负载可根据以上参数估算。

采用集电极开路输出,输出电流大,故可直接驱动继电器或固体继电器,也可直接驱动低压灯泡。

通常单片机驱动ULN2003时,上拉2K 的电阻较为合适,同时,COM引脚应该悬空或接电源。

ULN2003是一个非门电路,包含7个单元,但独每个单元驱动电流最大可达350mA.资料的最后有引用电路,9脚可以悬空。

比如1脚输入,16脚输出,你的负载接在VCC与16脚之间,不用9脚。

ULN2003是大电流驱动阵列,多用于单片机、智能仪表、PLC、数字量输出卡等控制电路中。

可直接驱动继电器等负载,输入5VTTL电平,输出可达500mA/50V。

ULN2003是高耐压、大电流达林顿陈列,由七个硅NPN达林顿管组成。

该电路的特点如下:ULN2003的每一对达林顿都串联一个2.7K的基极电阻,在5V的工作电压下它能与TTL和CMOS电路直接相连,可以直接处理原先需要标准逻辑缓冲器。

ULN2003 是高压大电流达林顿晶体管阵列系列产品,具有电流增益高、工作电压高、温度范围宽、带负载能力强等特点,适应于各类要求高速大功率驱动的系统。

经常在以下电路中使用,作为:1、显示驱动2、继电器驱动3、照明灯驱动4、电磁阀驱动5、伺服电机、步进电机驱动等电路中。

ULN2003 的每一对达林顿都串联一个2.7K 的基极电阻,在5V 的工作电压下它能与TTL 和CMOS 电路直接相连,可以直接处理原先需要标准逻辑缓冲器来处理的数据。

uln2003ULN2003A中文资料

uln2003ULN2003A中文资料

uln2003/ULN2003A中文资料时间:2009-06-10 17:35:13 来源:资料室作者:在自动化密集的的场合会有很多被控元件如继电器,微型电机,风机,电磁阀,空调,水处理等元件及设备,这些设备通常由CPU所集中控制,由于控制系统不能直接驱动被控元件,这需要由功率电路来扩展输出电流以满足被控元件的电流,电压。

ULN2XXXX高压大电流达林顿晶体管阵列系列产品就属于这类可控大功率器件,由于这类器件功能强、应用范围语广。

因此,许多公司都生产高压大电流达林顿晶体管阵列产品,从而形成了各种系列产品。

原理:LN2003也是一个7路反向器电路,即当输入端为高电平时ULN2003输出端为低电平,当输入端为低电平时ULN2003输出端为高电平,继电器得电吸合。

如图九所示功能特点:高电压输出50V输出钳位二极管输入兼容各种类型的逻辑电路应用继电器驱动器ULN200X逻辑图electrical characteristics, 电气特性(除非另有说明)TA = 25℃(unless otherwise noted)switching characteristics over recommended operating conditions (unless otherwise noted)开关特性的建议运行条件(除非另有说明)图一ULN2001A内部电路图图二ULN2002A内部电路图图三ULN2003A ULN2004A ULQ2003A ULQ2004A内部电路图图1 ICEX测试电路图2 ICEX测试电路图3 ICEX测试电路图4ICEX测试电路图5 hFE, VCE(sat)测试电路图6 VI(on) 测试电路图四参数测量信息应用电路:图五MOS管加载到输入端图六TTL电路到输入端图七冲区高电流负载图八使用上拉电阻提高驱动电流图九实际应用的UL2003电路图。

ULN2003A引脚图及功能资料讲解

ULN2003A引脚图及功能资料讲解

U L N2003A引脚图及功能ULN2003步进电机驱动电路ULN是集成达林顿管IC,内部还集成了一个消线圈反电动势的二极管,可用来驱动继电器。

它是双列16脚封装,NPN晶体管矩阵,最大驱动电压=50V,电流=500mA,输入电压=5V,适用于TTL COMS,由达林顿管组成驱动电路。

ULN是集成达林顿管IC,内部还集成了一个消线圈反电动势的二极管,它的输出端允许通过电流为200mA,饱和压降VCE 约1V左右,耐压BVCEO 约为36V。

用户输出口的外接负载可根据以上参数估算。

采用集电极开路输出,输出电流大,故可直接驱动继电器或固体继电器,也可直接驱动低压灯泡。

通常单片机驱动ULN2003时,上拉2K的电阻较为合适,同时,COM引脚应该悬空或接电源。

ULN2003是一个非门电路,包含7个单元,但独每个单元驱动电流最大可达350mA.资料的最后有引用电路,9脚可以悬空。

比如1脚输入,16脚输出,你的负载接在VCC与16脚之间,不用9脚。

ULN2003的作用:ULN2003是大电流驱动阵列,多用于单片机、智能仪表、PLC、数字量输出卡等控制电路中。

可直接驱动继电器等负载。

输入5VTTL电平,输出可达500mA/50V。

ULN2003是高耐压、大电流达林顿陈列,由七个硅NPN达林顿管组成。

ULN2003的每一对达林顿都串联一个2.7K的基极电阻,在5V的工作电压下它能与TTL和CMOS电路直接相连,可以直接处理原先需要标准逻辑缓冲器。

ULN2003 是高压大电流达林顿晶体管阵列系列产品,具有电流增益高、工作电压高、温度范围宽、带负载能力强等特点,适应于各类要求高速大功率驱动的系统。

ULN2003A引脚图及功能:图七 ULN2003引脚图ULN2003 是高耐压、大电流、内部由七个硅NPN 达林顿管组成的驱动芯片。

经常在以下电路中使用,作为显示驱动、继电器驱动、照明灯驱动、电磁阀驱动、伺服电机、步进电机驱动等电路中。

ULN2003 ULN2003A中文资料

ULN2003 ULN2003A中文资料

2 70℃
VI=6V
Off state input current 关 VCE=50V,TA=70℃
闭状态下输入电流
3 IC=500μA,
50
Input current 输入电流 4 VI = 17 V
Clamp reverse current
VR=50V, TA=70℃
反向钳位电流
7 VR = 50 V
TEST CONDITIONS ULQ2003A,ULQ2004A 单
测试条件
最小
典型 最大 位
Propagation delay time, low- to tPLH high-level output 传播延迟时间,See Figure 9
从低到高输出
1 10 μs
Propagation delay time, hightPHL to low-level output 传播延迟时
ULN200X 逻辑图
DISSIPATION RATING TABLE 耗散评级表
PACKAGE TA=25℃ POWER 封装 RATING 额定功率
DERATING FACTOR ABOVE TA=85℃ POWER
功耗系数 TA=25℃
RATING 额定功率
D
950 mW
7.6 mW/℃
494 mW
典最 最
最小
典型 最大
型大 小
On-state input voltage
VI(on) 输入电压
6 VCE=2V, IC =300mA
13 V
VCE(sat) Collector-emitter
II=250μA,IC=100mA 5
0.9 1.1

uln2803a中文资料.doc

uln2803a中文资料.doc

要: ULN2000、 ULN2800是高压大电流达林顿晶体管阵列系列产品, 具有电流增益高、工作电压高、温度范围宽、带负载能力强等特点, 适应于各类要求高速大功率驱动的系统。

ULN2003A电路是美国Texas Instruments 公司和 Sprague 公司开发的高压大电流达林顿晶体管阵列电路, 文中介绍了它的电路构成、特征参数及典型应用。

关键词:达林顿晶体管阵列驱动电路ULN2003 ULN2000系列ULN2800系列1概述功率电子电路大多要求具有大电流输出能力,以便于驱动各种类型的负载。

功率驱动电路是功率电子设备输出电路的一个重要组成部分。

在大型仪器仪表系统中, 经常要用到伺服电机、步进电机、各种电磁阀、泵等驱动电压高且功率较大的器件。

ULN2000、 ULN2800高压大电流达林顿晶体管阵列系列产品就属于这类可控大功率器件, 由于这类器件功能强、应用范围语广。

因此, 许多公司都生产高压大电流达林顿晶体管阵列产品, 从而形成了各种系列产品,ULN2000、ULN2800系列就是美国Texas Instruments 公司、美国 Sprague 公司开发的高压大电流达林顿晶体管阵列产品。

它们的系列型号分类如表 1 所列 , 生产 2000、2800 高压大电流达林顿晶体管阵列系列产品的公司与型号对照表如表 2 所列。

在上述系列产品中,ULN2000 系列能够同时驱动 7 组高压大电流负载 ,ULN2800 系列则能够同时驱动8 组高压大电流负载。

美国Texas Instruments 公司、美国 Sprague 公司生产的 ULN2003A由 7 组达林顿晶体管阵列和相应的电阻网络以及钳位二极管网络构成, 具有同时驱动 7 组负载的能力 , 为单片双极型大功率高速集成电路。

以下介绍该电路的构成、性能特征、电参数以及典型应用。

2000、2800 高压大电流达林顿晶体管阵列系列中的其它产品的性能特性与应用可参考ULN2003A。

ULN2003应用电路及中文资料

ULN2003应用电路及中文资料

ULN2003应用电路及中文资料ULN2000、ULN2800是高压大电流达林顿晶体管阵列系列产品,具有电流增益高、工作电压高、温度范围宽、带负载能力强等特点,适应于各类要求高速大功率驱动的系统。

ULN2003A电路是美国Texas Instruments公司和Sprague公司开发的高压大电流达林顿晶体管阵列电路,文中介绍了它的电路构成、特征参数及典型应用。

关键词:达林顿晶体管阵列驱动电路ULN2003 ULN2000系列ULN2800系列1 概述功率电子电路大多要求具有大电流输出能力,以便于驱动各种类型的负载。

功率驱动电路是功率电子设备输出电路的一个重要组成部分。

在大型仪器仪表系统中,经常要用到伺服电机、步进电机、各种电磁阀、泵等驱动电压高且功率较大的器件。

ULN2000、ULN2800高压大电流达林顿晶体管阵列系列产品就属于这类可控大功率器件,由于这类器件功能强、应用范围语广。

因此,许多公司都生产高压大电流达林顿晶体管阵列产品,从而形成了各种系列产品,ULN2000、ULN2800系列就是美国Texas Instruments公司、美国Sprague公司开发的高压大电流达林顿晶体管阵列产品。

它们的系列型号分类如表1所列,生产2000、2800高压大电流达林顿晶体管阵列系列产品的公司与型号对照表如表2所列。

在上述系列产品中,ULN2000系列能够同时驱动7组高压大电流负载,ULN2800系列则能够同时驱动8组高压大电流负载。

美国Texas Instruments公司、美国Sprague公司生产的ULN2003A由7组达林顿晶体管阵列和相应的电阻网络以及钳位二极管网络构成,具有同时驱动7组负载的能力,为单片双极型大功率高速集成电路。

以下介绍该电路的构成、性能特征、电参数以及典型应用。

2000、2800高压大电流达林顿晶体管阵列系列中的其它产品的性能特性与应用可参考ULN2003A。

表1 ULN2000、ULN2800系列型号分类表输出电压50V 50V 95V 50V 50V 95V输出电流500mA 600mA 500mA 500mA 600mA 500mA型号型号普通PMOS、CMOS输入ULN2001A ULN2011A ULN2021 ULN2801A ULN2811A ULN2821A14~25C PMOS输入ULN2002A ULN2012A ULN2022 ULN2802A ULN2812A ULN2822A 5V TTL、CMOS输入ULN2003A ULN2013A ULN2023A ULN2803A ULN2813A ULN2823A 6~15V PMOS、CMOS输入ULN2004A ULN2014A ULN2024A ULN2804A ULN2814A ULN2824A 高输出TTL接口ULN2005A ULN2015A ULN2025A ULN2805A ULN2815A ULN2825AULN200A电路具有以下特点:●电流增益高(大于1000);●带负载能力强(输出电流大于500mA);●温度范围宽(-40~85℃);●工作电压高(大于50V)。

ULN2003ANSR中文资料

ULN2003ANSR中文资料

PACKAGING INFORMATIONOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)ULN2001AD OBSOLETE SOIC D16TBD Call TI Call TIULN2001ADR OBSOLETE SOIC D16TBD Call TI Call TIULN2001AN OBSOLETE PDIP N16TBD Call TI Call TIULN2002AD OBSOLETE SOIC D16TBD Call TI Call TIULN2002AN ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeULN2002ANE4ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeULN2003AD ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003ADE4ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003ADG4ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003ADR ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003ADRE4ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003ADRG4ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003AJ OBSOLETE CDIP J16TBD Call TI Call TIULN2003AN ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeULN2003ANE4ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeULN2003ANSR ACTIVE SO NS162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003ANSRE4ACTIVE SO NS162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003ANSRG4ACTIVE SO NS162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003APW ACTIVE TSSOP PW1690Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003APWE4ACTIVE TSSOP PW1690Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003APWG4ACTIVE TSSOP PW1690Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003APWR ACTIVE TSSOP PW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003APWRE4ACTIVE TSSOP PW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2003APWRG4ACTIVE TSSOP PW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2004AD ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2004ADE4ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2004ADG4ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)ULN2004ADR ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2004ADRE4ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2004ADRG4ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2004AN ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeULN2004ANE4ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeULN2004ANSR ACTIVE SO NS162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULN2004ANSRG4ACTIVE SO NS162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULQ2003AD ACTIVE SOIC D1640Pb-Free(RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIMULQ2003ADG4ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULQ2003ADR ACTIVE SOIC D162500Pb-Free(RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIMULQ2003ADRG4ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULQ2003AN ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU N/A for Pkg TypeULQ2004AD ACTIVE SOIC D1640Pb-Free(RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIMULQ2004ADG4ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULQ2004ADR ACTIVE SOIC D162500Pb-Free(RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIMULQ2004ADRG4ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMULQ2004AN ACTIVE PDIP N1625Pb-Free(RoHS)CU NIPDAU N/A for Pkg Type(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-The planned eco-friendly classification:Pb-Free(RoHS),Pb-Free(RoHS Exempt),or Green(RoHS&no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all6substances,including the requirement that lead not exceed0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free(RoHS Exempt):This component has a RoHS exemption for either1)lead-based flip-chip solder bumps used between the die and package,or2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free(RoHS compatible)as defined above.Green(RoHS&no Sb/Br):TI defines"Green"to mean Pb-Free(RoHS compatible),and free of Bromine(Br)and Antimony(Sb)based flame retardants(Br or Sb do not exceed0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.OTHER QUALIFIED VERSIONS OF ULQ2003A,ULQ2004A:•Automotive:ULQ2003A-Q1,ULQ2004A-Q1NOTE:Qualified Version Definitions:•Automotive-Q100devices qualified for high-reliability automotive applications targeting zero defectsTAPE AND REEL INFORMATION*All dimensions are nominal Device Package Type Package DrawingPinsSPQ Reel Diameter (mm)Reel Width W1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant ULN2003ADR SOICD 162500330.016.4 6.510.3 2.18.016.0Q1ULN2003ADR SOICD 162500330.016.4 6.510.3 2.18.016.0Q1ULN2003ANSR SONS 162000330.016.48.210.5 2.512.016.0Q1ULN2003APWR TSSOPPW 162000330.012.47.0 5.6 1.68.012.0Q1ULN2004ADR SOICD 162500330.016.4 6.510.3 2.18.016.0Q1ULN2004ADR SOICD 162500330.016.4 6.510.3 2.18.016.0Q1ULN2004ANSR SO NS 162000330.016.48.210.5 2.512.016.0Q1*All dimensions are nominalDevice Package Type Package Drawing Pins SPQ Length(mm)Width(mm)Height(mm) ULN2003ADR SOIC D162500333.2345.928.6 ULN2003ADR SOIC D162500346.0346.033.0 ULN2003ANSR SO NS162000346.0346.033.0 ULN2003APWR TSSOP PW162000346.0346.029.0 ULN2004ADR SOIC D162500333.2345.928.6 ULN2004ADR SOIC D162500346.0346.033.0 ULN2004ANSR SO NS162000346.0346.033.0IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries(TI)reserve the right to make corrections,modifications,enhancements,improvements, and other changes to its products and services at any time and to discontinue any product or service without notice.Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty.Testing and other quality 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ULN2003ADRG4中文资料

ULN2003ADRG4中文资料

PACKAGING INFORMATIONOrderableDevice Status (1)Package Type Package DrawingPins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)ULN2001AD OBSOLETE SOIC D 16TBD Call TI Call TI ULN2001ADR OBSOLETE SOIC D 16TBD Call TI Call TI ULN2001AN OBSOLETE PDIP N 16TBD Call TI Call TI ULN2002AD OBSOLETE SOIC D 16TBD Call TI Call TIULN2002AN ACTIVE PDIP N 1625Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type ULN2002ANE4ACTIVE PDIP N 1625Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type ULN2003AD ACTIVE SOIC D 1640Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003ADE4ACTIVE SOIC D 1640Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003ADG4ACTIVE SOIC D 1640Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003ADR ACTIVE SOIC D 162500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003ADRE4ACTIVE SOIC D 162500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003ADRG4ACTIVE SOIC D 162500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003AJ OBSOLETE CDIP J 16TBD Call TI Call TIULN2003AN ACTIVE PDIP N 1625Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type ULN2003ANE4ACTIVE PDIP N 1625Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type ULN2003ANSR ACTIVE SO NS 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003ANSRE4ACTIVE SO NS 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003ANSRG4ACTIVE SO NS 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003APW ACTIVE TSSOP PW 1690Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003APWE4ACTIVE TSSOP PW 1690Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003APWG4ACTIVE TSSOP PW 1690Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003APWR ACTIVE TSSOP PW 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003APWRE4ACTIVE TSSOP PW 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003APWRG4ACTIVE TSSOP PW 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2004AD ACTIVE SOIC D 1640Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2004ADE4ACTIVE SOIC D 1640Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2004ADG4ACTIVESOICD1640Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIM22-Aug-2007Orderable Device Status (1)Package Type Package DrawingPins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)ULN2004ADR ACTIVE SOIC D 162500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2004ADRE4ACTIVE SOIC D 162500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2004ADRG4ACTIVE SOIC D 162500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2004AN ACTIVE PDIP N 1625Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type ULN2004ANE4ACTIVE PDIP N 1625Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type ULN2004ANSR ACTIVE SO NS 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2004ANSRG4ACTIVE SO NS 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULQ2003AD NRND SOIC D 1640Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM ULQ2003ADG4ACTIVE SOIC D 1640Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULQ2003ADR NRND SOIC D 162500Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM ULQ2003ADRG4ACTIVE SOICD 162500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULQ2003AN ACTIVE PDIP N 1625Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type ULQ2004AD NRND SOIC D 1640Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM ULQ2004ADG4ACTIVE SOIC D 1640Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULQ2004ADR NRND SOIC D 162500Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM ULQ2004ADRG4ACTIVE SOIC D 162500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULQ2004ANACTIVEPDIPN1625Pb-Free (RoHS)CU NIPDAUN /A for Pkg Type(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS),Pb-Free (RoHS Exempt),or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1)lead-based flip-chip solder bumps used between the die and package,or 2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free (RoHS compatible)as defined above.Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight in homogeneous material)22-Aug-2007(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annualbasis.22-Aug-2007TAPE AND REEL BOXINFORMATIONDevicePackage Pins SiteReel Diameter (mm)Reel Width (mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant ULN2003ADR D 16SITE 2733016 6.510.3 2.1816Q1ULN2003ADR D 16SITE 4133016 6.510.3 2.1816Q1ULN2003ANSR NS 16SITE 41330168.210.5 2.51216Q1ULN2003APWR PW 16SITE 41330127.0 5.6 1.6812Q1ULN2004ADR D 16SITE 2733016 6.510.3 2.1816Q1ULN2004ADR D 16SITE 4133016 6.510.3 2.1816Q1ULN2004ANSRNS16SITE 41330168.210.52.51216Q122-Sep-2007DevicePackagePins Site Length (mm)Width (mm)Height (mm)ULN2003ADR D 16SITE 27342.9336.60.0ULN2003ADR D 16SITE 41346.0346.00.0ULN2003ANSR NS 16SITE 41346.0346.00.0ULN2003APWR PW 16SITE 41346.0346.00.0ULN2004ADR D 16SITE 27342.9336.60.0ULN2004ADR D 16SITE 41346.0346.00.0ULN2004ANSRNS16SITE 41346.0346.00.022-Sep-2007IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries(TI)reserve the right to make corrections,modifications,enhancements, improvements,and other changes to its products and services at any time and to discontinue any product or service without notice. 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uln2803a中文资料

uln2803a中文资料

要:ULN2000、ULN2800是高压大电流达林顿晶体管阵列系列产品,具有电流增益高、工作电压高、温度范围宽、带负载能力强等特点,适应于各类要求高速大功率驱动的系统。

ULN2003A电路是美国Texas Instruments公司和Sprague公司开发的高压大电流达林顿晶体管阵列电路,文中介绍了它的电路构成、特征参数及典型应用。

关键词:达林顿晶体管阵列驱动电路 ULN2003 ULN2000系列 ULN2800系列1 概述功率电子电路大多要求具有大电流输出能力,以便于驱动各种类型的负载。

功率驱动电路是功率电子设备输出电路的一个重要组成部分。

在大型仪器仪表系统中,经常要用到伺服电机、步进电机、各种电磁阀、泵等驱动电压高且功率较大的器件。

ULN2000、ULN2800高压大电流达林顿晶体管阵列系列产品就属于这类可控大功率器件,由于这类器件功能强、应用范围语广。

因此,许多公司都生产高压大电流达林顿晶体管阵列产品,从而形成了各种系列产品,ULN2000、ULN2800系列就是美国Texas Instruments公司、美国Sprague公司开发的高压大电流达林顿晶体管阵列产品。

它们的系列型号分类如表1所列,生产2000、2800高压大电流达林顿晶体管阵列系列产品的公司与型号对照表如表2所列。

在上述系列产品中,ULN2000系列能够同时驱动7组高压大电流负载,ULN2800系列则能够同时驱动8组高压大电流负载。

美国Texas Instruments公司、美国Sprague公司生产的ULN2003A由7组达林顿晶体管阵列和相应的电阻网络以及钳位二极管网络构成,具有同时驱动7组负载的能力,为单片双极型大功率高速集成电路。

以下介绍该电路的构成、性能特征、电参数以及典型应用。

2000、2800高压大电流达林顿晶体管阵列系列中的其它产品的性能特性与应用可参考ULN2003A。

表1 ULN2000、ULN2800系列型号分类表输出电压50V50V95V50V50V95V输出电流500mA600mA500mA500mA600mA500mA型号型号普通PMOS、CMOS输入ULN2001A ULN2011A ULN2021ULN2801A ULN2811A ULN2821A 14~25C PMOS输入ULN2002A ULN2012A ULN2022ULN2802A ULN2812A ULN2822A 5V TTL、CMOS输入ULN2003A ULN2013A ULN2023A ULN2803A ULN2813A ULN2823A 6~15V PMOS、CMOS输入ULN2004A ULN2014A ULN2024A ULN2804A ULN2814A ULN2824A 高输出TTL接口ULN2005A ULN2015A ULN2025A ULN2805A ULN2815A ULN2825AULN200A电路具有以下特点:●电流增益高(大于1000);●带负载能力强(输出电流大于500mA);●温度范围宽(-40~85℃);●工作电压高(大于50V)。

ULN2003A

ULN2003A

1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
1B 2B 3B 4B 5B 6B 7B E
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
1C 2C 3C 4C 5C 6C 7C COM
DESCRIPTION
The ULN2002A, ULN2003A, ULN2003AI, ULN2004A, ULQ2003A, and ULQ2004A are high-voltage high-current Darlington transistor arrays. Each consists of seven npn Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The collector-current rating of a single Darlington pair is 500 mA. The Darlington pairs can be paralleled for higher current capability. Applications include relay drivers, hammer drivers, lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers. For 100-V (otherwise interchangeable) versions of the ULN2003A and ULN2004A, see the SN75468 and SN75469, respectively. The ULN2002A is designed specifically for use with 14-V to 25-V PMOS devices. Each input of this device has a Zener diode and resistor in series to control the input current to a safe limit. The ULN2003A and ULQ2003A have a 2.7-kΩ series base resistor for each Darlington pair for operation directly with TTL or 5-V CMOS devices. The ULN2004A and ULQ2004A have a 10.5-kΩ series base resistor to allow operation directly from CMOS devices that use supply voltages of 6 V to 15 V. The required input current of the ULN/ULQ2004A is below that of the ULN/ULQ2003A, and the required voltage is less than that required by the ULN2002A.

ULN2003应用电路及中文资料

ULN2003应用电路及中文资料

ULN2003应用电路及中文资料ULN2000、ULN2800是高压大电流达林顿晶体管阵列系列产品,具有电流增益高、工作电压高、温度范围宽、带负载能力强等特点,适应于各类要求高速大功率驱动的系统。

ULN2003A电路是美国Texas Instruments公司和Sprague公司开发的高压大电流达林顿晶体管阵列电路,文中介绍了它的电路构成、特征参数及典型应用。

功率电子电路大多要求具有大电流输出能力,以便于驱动各种类型的负载。

功率驱动电路是功率电子设备输出电路的一个重要组成部分。

在大型仪器仪表系统中,经常要用到伺服电机、步进电机、各种电磁阀、泵等驱动电压高且功率较大的器件。

ULN2000、ULN2800高压大电流达林顿晶体管阵列系列产品就属于这类可控大功率器件,由于这类器件功能强、应用范围语广。

因此,许多公司都生产高压大电流达林顿晶体管阵列产品,从而形成了各种系列产品,ULN2000、ULN2800系列就是美国Texas Instruments公司、美国Sprague公司开发的高压大电流达林顿晶体管阵列产品。

它们的系列型号分类如表1所列,生产2000、2800高压大电流达林顿晶体管阵列系列产品的公司与型号对照表如表2所列。

在上述系列产品中,ULN2000系列能够同时驱动7组高压大电流负载,ULN2800系列则能够同时驱动8组高压大电流负载。

美国Texas Instruments 公司、美国Sprague公司生产的ULN2003A由7组达林顿晶体管阵列和相应的电阻网络以及钳位二极管网络构成,具有同时驱动7组负载的能力,为单片双极型大功率高速集成电路。

以下介绍该电路的构成、性能特征、电参数以及典型应用。

2000、2800高压大电流达林顿晶体管阵列系列中的其它产品的性能特性与应用可参考ULN2003A。

ULN200A电路具有以下特点:●电流增益高(大于1000);●带负载能力强(输出电流大于500mA);●温度范围宽(-40~85℃);●工作电压高(大于50V)。

ULN2003 ULN2003A中文资料

ULN2003 ULN2003A中文资料

ULN2003 ULN2003A中文资料在自动化密集的的场合会有很多被控元件如继电器,微型电机,风机,电磁阀,空调,水处理等元件及设备,这些设备通常由CPU所集中控制,由于控制系统不能直接驱动被控元件,这需要由功率电路来扩展输出电流以满足被控元件的电流,电压。

ULN2XXXX高压大电流达林顿晶体管阵列系列产品就属于这类可控大功率器件,由于这类器件功能强、应用范围语广。

因此,许多公司都生产高压大电流达林顿晶体管阵列产品,从而形成了各种系列产品。

原理:LN2003也是一个7路反向器电路,即当输入端为高电平时ULN2003输出端为低电平,当输入端为低电平时ULN2003输出端为高电平,继电器得电吸合。

如图九所示功能特点:高电压输出50V输出钳位二极管输入兼容各种类型的逻辑电路应用继电器驱动器ULN200X逻辑图DISSIPATION RATING TABLE耗散评级表TA=25 POWER TA=85 POWER PACKAGEDERATING FACTOR ABOVERATING RATING TA=257.6 mW/? D 950 mW 494 mW9.2 mW/? N 1150 mW 598 mW electrical characteristics, 电气特性(除非另有说明)TA = 25? (unless otherwise noted)ULN2001A ULN2002A TEST CONDITIONS PARAMETEROn-state input voltage VI(on) 6 VCE=2V, IC =300mA 13 V 输入电压II=250μA,IC=100mA 0.9 1.1 0.9 1.1 Collector-emitter 5 VCE(sat) V saturation voltage集电极II=350μA, IC=200mA 1 1.3 1 1.3 -发射极饱和电压II=500μA, IC=350mA 1.2 1.6 1.2 1.6 Clamp forward voltage VF 8 IF = 350mA 1.7 2 1.7 2 V 正向钳位电压1 VCE = 50V, II = 0 50 50 μA Collector cutoff current ICEX II=0 100 100 VCE=50V,TA= 集电极截止电流2 70? VI=6V 500 Off state input current 关VCE=50V,TA=70? II(off)3 50 65 50 65 μA 闭状态下输入电流IC=500μA,Input current 输入电流 II 4 VI = 17 V 0.82 1.25 mAVR=50V, TA=70? 100 100 Clamp reverse current IR 7 μA 反向钳位电流VR = 50 V 50 50 Static forward-currenttransfer ratio 静态正向电hFE 5 VCE=2V, IC =350mA 1000流传输比Input capacitance 输入电 Ci VI = 0, f = 1MHz 15 25 15 25 pF 容electrical characteristics, 电气特性(除非另有说明)TA = 25? (unless otherwise noted)ULN2003A ULN2004APARAMETER TEST CONDITIONSIC=125mA 5IC=200mA 2.4 6IC=250mA 2.7 On state input VI(on) 66 VCE=2V V voltage输入电压IC=275mA 7IC=300mA 3IC=350mA 8ittCollector-emitter II = 250μA, IC=100mA 0.9 1.1 0.9 1.1saturation voltage II = 350μA, IC =200mA 1 1.3 1 1.3 VCE(sat) 5 V 集电极发射极饱和电II = 500μA, IC=350mA 1.2 1.6 1.2 1.6 压1 VCE = 50V, II = 0 50 50 μA Collector cutoffcurrent 集电极截止ICEX II = 0 100 100 VCE=50V,TA=70? 22 电流 VI = 1V 500 Clamp forwardvoltage 正向钳位电VF 8 IF = 350mA 1.7 2 1.7 2 V 压Off state input VCE = 50 V, CE , TA = 70? IC = current 关闭状态下II(off) 33 50 65 50 65 μA 500μA 输入电流Input current输入II 4 VI = 3.85 V 0.93 1.35 mA电流 VI = 5 V 0.35 0.5VI = 12 V 1 1.45Clamp reverse VR = 50 V 50 50 current 反向钳位电IR 77 μA VR = 50 V, TA = 70? 100 100 流Input capacitance Ci VI = 0, f =1MHz 15 25 15 25 pF 输入电容electrical characteristics, 电气特性(除非另有说明)TA = 25? (unless otherwise noted)ULQ2003A ULQ2004A TEST CONDITIONS PARAMETERIC=125mA 5IC=200mA 2.7 6IC=250mA 2.9 On state input voltageVI(on) 6 VCE=2V V 输入电压IC=275mA 7IC=300mA 3IC=350mA 8II = 250μA, IC=100mA 0.9 1.1 0.9 1.1 ittCollector-emittersaturation voltage集电VCE(sat) 5 II = 350μA, IC =200mA 1 1.3 1 1.3 V 极发射极饱和电压II = 500μA, IC=350mA 1.2 1.6 1.2 1.61 VCE = 50V, II = 0 50 50 Collector cutoff current ICEX II = 0 100 100 μA 集电极截止电流 22 VCE=50V VI = 1V 500 Clamp forward voltage VF 8 IF =350mA 1.7 2 1.7 2 V 正向钳位电压Off state input current II(off) 3 VCE =50V, IC=500μA 30 65 50 65μA 关闭状态下输入电流VI = 3.85V 0.93 1.35Input current输入电流 II 4 VI = 5V 0.35 0.5 mAVI = 12V 1 1.45VR = 50V TA =25? 100 50 Clamp reverse current IR 7 μA 反向钳位电流VR = 50V 100 100 Input capacitance输入 Ci VI = 0, f=1MHz 15 25 15 25 pF 电容switching characteristics, 开关特性TA = 25?ULN2001A,ULN2002A, TEST CONDITIONS ULN2003A,ULN2004A PARAMETERPropagation delay time, low- tohigh-level output传播延迟时间,tPLH See Figure 9 0.25 1 μs从低到高输出Propagation delay time, high-to low-level output 传播延迟时tPHL See Figure 9 0.25 1 μs间,从高到低输出High-level output voltage after VS=50V, IO?300mA, See VOH VS–20 mV switching 输出高电平电压 Figure 10switching characteristics over recommended operating conditions (unless otherwisenoted)开关特性的建议运行条件(除非另有说明)ULQ2003A,ULQ2004A TEST CONDITIONS PARAMETERPropagation delay time, low- tohigh-level output 传播延迟时间,tPLH See Figure 9 1 10 μs从低到高输出Propagation delay time, high-to low-level output 传播延迟时tPHL See Figure 9 1 10 μs间,从高到低输出High-level output voltage after VS=50V, IO?300mA, VOH VS–500 mV switching 输出高电平电压 See Figure 10图一 ULN2001A内部电路图图二 ULN2002A内部电路图图三 ULN2003A ULN2004A ULQ2003A ULQ2004A内部电路图图1 ICEX测试电路图2 ICEX测试电路图3 ICEX测试电路图4ICEX测试电路图5 hFE, VCE(sat)测试电路图6 VI(on) 测试电路图四参数测量信息应用电路:图五MOS管加载到输入端图六 TTL电路到输入端图七冲区高电流负载图八使用上拉电阻提高驱动电流图九实际应用的UL2003电路图absolute maximum ratings at=25 free-air temperature (unlessotherwise noted)†at=25Collector-emitter voltage 集电极-发射极电压 50 V Clamp diode reverse voltage 钳位二极管的反向电压(见注1 ) 50 V Input voltage, VI (see Note 1) 输入电压 30 V Peak collector current (see Figures 14 and 15)峰值集电极电流 500 mA Output clamp current, IOK .输出钳位电流 500 mA Totalemitter-terminal current 共发射极端子电流–2.5 A Continuous total power dissipation . 连续总功耗 See Dissipation Rating Table73?/W D packagePackage thermal impedance, θJA 封装热阻(see 67?/W N package Note 2):64?/W NS package–20? to 70? ULN200xA Operating free-air temperature range, TA 自由空气的温度范围内–40? to 85? ULQ200xA260? Lead temperature 1.6mm(1/16inch)from case for 10 seconds Storage temperature range, Tstg 储存温度范围–65? to 150?。

ULN2003A引脚图及功能-uln2003a原理

ULN2003A引脚图及功能-uln2003a原理

ULN2003步进电机驱动电路ULN是集成达林顿管IC,内部还集成了一个消线圈反电动势的二极管,可用来驱动继电器。

它是双列16脚封装,NPN晶体管矩阵,最大驱动电压=50V,电流=500mA,输入电压=5V,适用于TTL COMS,由达林顿管组成驱动电路。

ULN是集成达林顿管IC,内部还集成了一个消线圈反电动势的二极管,它的输出端允许通过电流为200mA,饱和压降VCE 约1V左右,耐压BVCEO 约为36V。

用户输出口的外接负载可根据以上参数估算。

采用集电极开路输出,输出电流大,故可直接驱动继电器或固体继电器,也可直接驱动低压灯泡。

通常单片机驱动ULN2003时,上拉2K的电阻较为合适,同时,COM引脚应该悬空或接电源。

ULN2003是一个非门电路,包含7个单元,但独每个单元驱动电流最大可达350mA.资料的最后有引用电路,9脚可以悬空。

比如1脚输入,16脚输出,你的负载接在VCC 与16脚之间,不用9脚。

ULN2003的作用:ULN2003是大电流驱动阵列,多用于单片机、智能仪表、PLC、数字量输出卡等控制电路中。

可直接驱动继电器等负载。

输入5VTTL电平,输出可达500mA/50V。

ULN2003是高耐压、大电流达林顿陈列,由七个硅NPN达林顿管组成。

ULN2003的每一对达林顿都串联一个2.7K的基极电阻,在5V的工作电压下它能与TTL和CMOS电路直接相连,可以直接处理原先需要标准逻辑缓冲器。

ULN2003 是高压大电流达林顿晶体管阵列系列产品,具有电流增益高、工作电压高、温度范围宽、带负载能力强等特点,适应于各类要求高速大功率驱动的系统。

ULN2003A引脚图及功能:图七ULN2003引脚图ULN2003 是高耐压、大电流、内部由七个硅NPN 达林顿管组成的驱动芯片。

经常在以下电路中使用,作为显示驱动、继电器驱动、照明灯驱动、电磁阀驱动、伺服电机、步进电机驱动等电路中。

ULN2003 的每一对达林顿都串联一个2.7K 的基极电阻,在5V 的工作电压下它能与TTL 和CMOS 电路直接相连,可以直接处理原先需要标准逻辑缓冲器来处理的数据。

ULN2003A

ULN2003A

PACKAGING INFORMATION OrderableDeviceStatus (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)ULN2001ADOBSOLETE SOIC D 16TBD Call TI Call TI ULN2001ADROBSOLETE SOIC D 16TBD Call TI Call TI ULN2001ANOBSOLETE PDIP N 16TBD Call TI Call TI ULN2002ADOBSOLETE SOIC D 16TBD Call TI Call TI ULN2002ANACTIVE PDIP N 1625Pb-Free (RoHS)CU NIPDAU Level-NC-NC-NC ULN2002ANE4ACTIVE PDIP N 1625Pb-Free (RoHS)CU NIPDAU Level-NC-NC-NC ULN2003ADACTIVE SOIC D 1640Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003ADE4ACTIVE SOIC D 1640Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003ADRACTIVE SOIC D 162500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003ADRE4ACTIVE SOIC D 162500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003AJOBSOLETE CDIP J 16TBD Call TI Call TI ULN2003ANACTIVE PDIP N 1625Pb-Free (RoHS)CU NIPDAU Level-NC-NC-NC ULN2003ANE4ACTIVE PDIP N 1625Pb-Free (RoHS)CU NIPDAU Level-NC-NC-NC ULN2003ANSRACTIVE SO NS 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003ANSRE4ACTIVE SO NS 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003ANSRG4ACTIVE SO NS 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003APWACTIVE TSSOP PW 1690Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003APWE4ACTIVE TSSOP PW 1690TBD Call TI Call TI ULN2003APWG4ACTIVE TSSOP PW 1690Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003APWRACTIVE TSSOP PW 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2003APWRE4ACTIVE TSSOP PW 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2004ADACTIVE SOIC D 1640Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2004ADE4ACTIVE SOIC D 1640Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2004ADRACTIVE SOIC D 162500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2004ADRE4ACTIVE SOIC D 162500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2004ANACTIVE PDIP N 1625Pb-Free (RoHS)CU NIPDAU Level-NC-NC-NC ULN2004ANE4ACTIVE PDIP N 1625Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NC 1-Dec-2005Orderable DeviceStatus (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)ULN2004ANSRACTIVE SO NS 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULN2004ANSRG4ACTIVE SO NS 162000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM ULQ2003ADACTIVE SOIC D 1640Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM ULQ2003ADRACTIVE SOIC D 162500Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM ULQ2003ANACTIVE PDIP N 1625Pb-Free (RoHS)CU NIPDAU Level-NC-NC-NC ULQ2004ADACTIVE SOIC D 1640Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM ULQ2004ADRACTIVE SOIC D 162500Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM ULQ2004ANACTIVE PDIP N 1625Pb-Free (RoHS)CU NIPDAU Level-NC-NC-NC (1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS)or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis. 1-Dec-2005IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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T o minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. 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ULN2003A引脚图及功能-uln2003a原理

ULN2003A引脚图及功能-uln2003a原理

ULN2003步进电机驱动电路ULN是集成达林顿管IC,内部还集成了一个消线圈反电动势的二极管,可用来驱动继电器。

它是双列16脚封装,NPN晶体管矩阵,最大驱动电压=50V,电流=500mA,输入电压=5V,适用于TTL COMS,由达林顿管组成驱动电路。

ULN是集成达林顿管IC,内部还集成了一个消线圈反电动势的二极管,它的输出端允许通过电流为200mA,饱和压降VCE 约1V左右,耐压BVCEO 约为36V。

用户输出口的外接负载可根据以上参数估算。

采用集电极开路输出,输出电流大,故可直接驱动继电器或固体继电器,也可直接驱动低压灯泡。

通常单片机驱动ULN2003时,上拉2K的电阻较为合适,同时,COM引脚应该悬空或接电源。

ULN2003是一个非门电路,包含7个单元,但独每个单元驱动电流最大可达350mA.资料的最后有引用电路,9脚可以悬空。

比如1脚输入,16脚输出,你的负载接在VCC 与16脚之间,不用9脚。

ULN2003的作用:ULN2003是大电流驱动阵列,多用于单片机、智能仪表、PLC、数字量输出卡等控制电路中。

可直接驱动继电器等负载。

输入5VTTL电平,输出可达500mA/50V。

ULN2003是高耐压、大电流达林顿陈列,由七个硅NPN达林顿管组成。

ULN2003的每一对达林顿都串联一个2.7K的基极电阻,在5V的工作电压下它能与TTL和CMOS电路直接相连,可以直接处理原先需要标准逻辑缓冲器。

ULN2003 是高压大电流达林顿晶体管阵列系列产品,具有电流增益高、工作电压高、温度范围宽、带负载能力强等特点,适应于各类要求高速大功率驱动的系统。

ULN2003A引脚图及功能:图七ULN2003引脚图ULN2003 是高耐压、大电流、内部由七个硅NPN 达林顿管组成的驱动芯片。

经常在以下电路中使用,作为显示驱动、继电器驱动、照明灯驱动、电磁阀驱动、伺服电机、步进电机驱动等电路中。

ULN2003 的每一对达林顿都串联一个2.7K 的基极电阻,在5V 的工作电压下它能与TTL 和CMOS 电路直接相连,可以直接处理原先需要标准逻辑缓冲器来处理的数据。

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2
Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
TA = 85 °C for ULN2002, VCE = 50 V, VI = 6 V (Figure 4.)
500 µA
TA = 85 °C for ULN2002, VCE = 50 V, VI = 1V (Figure 4.)
500
VCE(SAT)
Collector-emitter saturation voltage (Figure 5.)
The versions interface to all common logic families: ULN2001 (general purpose, DTL, TTL, PMOS, CMOS); ULN2002 (14 - 25 V PMOS); ULN2003 (5 V TTL, CMOS); ULN2004 (6 - 15 V CMOS, PMOS).
Seven Darlington array
Datasheet - production data
Description
The ULN2001, ULN2002, ULN2003 and ULN 2004 are high voltage, high current Darlington arrays each containing seven open collector Darlington pairs with common emitters. Each channel rated at 500 mA and can withstand peak currents of 600 mA. Suppression diodes are included for inductive load driving and the inputs are pinned opposite the outputs to simplify board layout.
9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
DocID5279 Rev 9
ULN2001, ULN2002, ULN2003, ULN2004
July 2015
This is information on a product in full production.
DocID5279 Rev 9
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Contents
Contents
ULN2001, ULN2002, ULN2003, ULN2004
1
Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
hFE
DC Forward current gain (Figure 5.)
for ULN2001, VCE = 2 V, IC = 350 mA
1000
CI Input capacitance
15 25 pF
tPLH Turn-on delay time
0.5 VI to 0.5 VO
0.25 1
7.1 DIP-16L package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
7.2 Plastic DIP-16L package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
The ULN2001A/2002A/2003A and 2004A are supplied in 16 pin plastic DIP packages with a copper leadframe to reduce thermal resistance. They are available also in small outline package (SO-16) as ULN2001D1/2002D1/2003D1/ 2004D1.
DocID5279 Rev 9
5/19
19
Electrical characteristics
4
Electrical characteristics
ULN2001, ULN2002, ULN2003, ULN2004
TA = 25 °C unless otherwise specified.
Symbol
1
Diagram
Figure 1. Schematic diagram
Diagram
ULN2001 (each driver)
ULN2002 (each driver)
ULN2003 (each driver)
ULN2004Βιβλιοθήκη (each driver)DocID5279 Rev 9
3/19
19
Pin configuration
loads • Outputs can be paralleled for higher current • TTL/CMOS/PMOS/DTL compatible inputs • Inputs pinned opposite outputs to simplify
layout
ULN2001, ULN2002 ULN2003, ULN2004
DIP-16L Plastic DIP-16L
SO-16 (Narrow)
Features
• Seven Darlingtons per package • Output current 500 mA per driver (600 mA
peak) • Output voltage 50 V • Integrated suppression diodes for inductive
6
Typical performance characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
for ULN2003, VI = 3.85 V for ULN2004, VI = 5 V
0.93 1.35 mA
0.35 0.5
VI = 12 V
1 1.45
II(OFF) Input current (Figure 7.)
TA = 85 °C, IC = 500 µA
50
65
µA
VI(ON) Input voltage (Figure 8.)
Maximum ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VO
VI
IC IB TA TSTG TJ
Output voltage Input voltage (for ULN2002A/D - 2003A/D 2004A/D) Continuous collector current Continuous base current Operating ambient temperature range Storage temperature range Junction temperature
VCE= 2 V, for ULN2002 IC = 300 mA for ULN2003
IC = 200 mA IC = 250 mA IC = 300 mA for ULN2004
IC = 125 mA IC = 200 mA IC = 275 mA IC = 350 mA
13
2.4
2.7
3
V
5 6 7 8
4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
7.3 SO-16 narrow package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
8
Order code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
µs
tPHL Turn-off delay time
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