NZT45H8资料

- 40 ºC 25 °C
0.8 0.6 0.4 0.1
25 °C
125 ºC
0.8 0.6 0.4 0.1
125 ºC
1 I C - COLLECTOR CURRENT (A)
10
1 I C - COLLECTOR CURRENT (A)
10
Collector-Cutoff Current vs Ambient Temperature
ON CHARACTERISTICS
hFE VCE(sat ) VBE( sat) VBE( on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage I C = 2.0 A, VCE = 1.0 V I C = 4.0 A, VCE = 1.0 V I C = 8.0 A, IB = 0.4 A I C = 8.0 A, IB = 0.8 A I C = 10 mA, VCE = 2.0 V 0.54 60 40 1.0 1.5 0.65 V V V
元器件交易网
D45H8 / NZT45H8
PNP Power Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
元器件交易网
D45H8 / NZT45H8
PNP Power Amplifier
(continued)
AC Typical Characteristics
(continued)
Maximum Power Dissipation vs. Case Temperature
Maximum Power Dissipation vs. Ambient Temperature
60 8.0 -55 to +150
Units
V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Max
*NZT45H8 1.5 12 83.3
Units
W mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 1997 Fairchild Semiconductor Corporation
200 180
125 °C Vce = 5V
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation Voltage vs Collector Current
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product I C = 500 mA, VCE = 10 V, 40 MHz
DC Typical Characteristics
Typical Pulsed Current Gain vs Collector Current
元器件交易网
D45H8 / NZT45H8
Discrete POWER & Signal Technologies
D45H8
NZT45H8
C
B
E C E C
TO-220
SOT-223
B
PNP Power Amplifier
This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient D45H8 60 480 2.1 62.5
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
VBESAT- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
Base-Emitter ON Voltage vs Collector Current
VCE = 5V
1.4 1.2 1
- 40 ºC
Absolute Maximum Ratings*
Symbol
VCEO IC TJ, Tstg Collector-Emitter Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
P Q
10 15
元器件交易网
D45H8 / NZT45H8
PNP Power Amplifier
(continued)
DC Typical Characteristics
(continued)
1.6 1.4 1.2 1
β = 10
VBE(ON) BASE-EMITTER ON VOLTAGE (V) -
1 β = 10
125 ºC
0.8 0.6 0.ቤተ መጻሕፍቲ ባይዱ 0.2
160 140 120 100 80 60
- 40 °C 25 °C
25 °C
- 40 ºC
40 0.01 0.02
0.05 0.1 0.2 0.5 1 2 I C - COLLECTOR CURRENT (A)
5
10
0 0.1
1 I C - COLLECTOR CURRENT (A)
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 100 mA, IB = 0 VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 60 10 100 V µA µA
POWER DISSIPATION vs AMBIENT TEMPERATURE
PD - POWER DISSIPATION (W) 1.5 1.25 1 0.75 0.5 0.25 0
SOT-223
0
25
50 75 100 o TEMPERATURE ( C)
125
150
Thermal Response in TO-220 Package
ICBO- COLLECTOR CURRENT (nA) 100 V CB = 50V 10
1
0.1
0.01 25
50 75 100 125 T A - AMBIENT TEMPERATURE (ºC)
P 5Q
150
AC Typical Characteristics
Safe Operating Area TO-220