2SD2549资料
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Power Transistors
2SD2549
Silicon NPN triple diffusion planar type
For power amplification
9.9±0.3
Unit: mm
4.6±0.2 2.9±0.2
3.0±0.5
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw
Tstg
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Symbol VCEO VBE ICES Collector-emitter voltage (Base open) Base-emitter voltage
tf o ht llow tp in :// g pa U na RL so a ni bo c. u ne t l t/s ate c/ st en in f
1
ICP
or m
t=10ms
10
10−1
1
101
10−2
0.1
10−3 10−2
10−1
1
10
1 10−2
10−1
1
10
1
10
Collector current IC (A)
Collector current IC (A)
Collector-emitter voltage VCE (V)
Rth t
12
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
Collector-emitter saturation voltage VCE(sat) (V)
10−1
Pl
1
10
102
103
Time t (s)
2
SJD00276BED
at io n.
t=1ms t=1s
VCE(sat) IC
hFE IC
Safe operation area
Non repetitive pulse TC=25˚C
100
Request for your special attention and precautions in using the technical information and semiconductors described in this book
Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio
20
15
4
IB=100mA
10
(2)
90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 10mA
Collector current IC (A)
6
6
4
M Di ain sc te on na tin nc ue e/ d
5
(3)
2
2
0
0
40
80
120
160
0
0
2
4
6
8
10
10
Ta=25˚C
103
Ta=25˚C
Forward current transfer ratio hFE
tf o ht llow tp in :// g pa U na RL so a ni bo c. u ne t l t/s ate c/ st en in f
IC
102
Collector current IC (A)
0.8±0.1
0.55±0.15
Rating 80 80 6 3 5
Unit V V V A A
Emitter-base voltage (Collector open) Collector current
1
2
3
Collector power dissipation
Ta = 25°C
Junction temperature Storage temperature
15.0±0.5
φ 3.2±0.1
M Di ain sc te on na tin nc ue e/ d
13.7±0.2 4.2±0.2 Solder Dip
1.4±0.2 1.6±0.2
2.6±0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol VCBO VCEO VEBO IC ICP PC Tj Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
102
(1)
Thermal resistance Rth (°C/W)
ea s
e
vi
si
(2)
10
1
Note: Rth was measured at Ta=25˚C and under natural convection. (1)PT=10V×0.2A(2W) and without heat sink (2)PT=10V×0.8A(8W) and with a 100×100×2mm Al heat sink
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
20 W 2.0 150 °C −55 to +150 °C Conditions Min 80 Typ
Peak collector current
or m
30
1: Base 2: Collector 3: Emitter TO-220D-A1 Package
IC = 30 mA, IB = 0
VCE = 4 V, IC = 3 A VCE = 70 V, IB = 0 VEB = 6 V, IC = 0
VCE = 70 V, VBE = 0
ICEO IEBO hFE2 fT ton tstg tf
si
vi
ea s
e
hFE1 *
VCE = 4 V, IC = 1 A
70
VCE = 4 V, IC = 3 A
10
Pl
Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
30
(1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)Without heat sink (PC=2W)
IC VCE
8
TC=25˚C
IC VBE
8
Ta=25˚C
Collector power dissipation PC (W)
25
(1)
Collector current IC (A)
at io n.
Max 1.8 100 100 1 250 0.7 0.5 4.5 0.5
2.54±0.30 5.08±0.50
Unit V V µA µA mA V MHz µs µs µs
Publication date: April 2003
SJD00276BED
1
2SD2549
PC Ta
VCE(sat)
IC = 3 A, IB = 0.375 A
VCE = 10 V, IC = 0.5 A, f = 10 MHz IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A VCC = 50 V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 70 to 150 P 120 to 250
2SD2549
Silicon NPN triple diffusion planar type
For power amplification
9.9±0.3
Unit: mm
4.6±0.2 2.9±0.2
3.0±0.5
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw
Tstg
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Symbol VCEO VBE ICES Collector-emitter voltage (Base open) Base-emitter voltage
tf o ht llow tp in :// g pa U na RL so a ni bo c. u ne t l t/s ate c/ st en in f
1
ICP
or m
t=10ms
10
10−1
1
101
10−2
0.1
10−3 10−2
10−1
1
10
1 10−2
10−1
1
10
1
10
Collector current IC (A)
Collector current IC (A)
Collector-emitter voltage VCE (V)
Rth t
12
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
Collector-emitter saturation voltage VCE(sat) (V)
10−1
Pl
1
10
102
103
Time t (s)
2
SJD00276BED
at io n.
t=1ms t=1s
VCE(sat) IC
hFE IC
Safe operation area
Non repetitive pulse TC=25˚C
100
Request for your special attention and precautions in using the technical information and semiconductors described in this book
Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio
20
15
4
IB=100mA
10
(2)
90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 10mA
Collector current IC (A)
6
6
4
M Di ain sc te on na tin nc ue e/ d
5
(3)
2
2
0
0
40
80
120
160
0
0
2
4
6
8
10
10
Ta=25˚C
103
Ta=25˚C
Forward current transfer ratio hFE
tf o ht llow tp in :// g pa U na RL so a ni bo c. u ne t l t/s ate c/ st en in f
IC
102
Collector current IC (A)
0.8±0.1
0.55±0.15
Rating 80 80 6 3 5
Unit V V V A A
Emitter-base voltage (Collector open) Collector current
1
2
3
Collector power dissipation
Ta = 25°C
Junction temperature Storage temperature
15.0±0.5
φ 3.2±0.1
M Di ain sc te on na tin nc ue e/ d
13.7±0.2 4.2±0.2 Solder Dip
1.4±0.2 1.6±0.2
2.6±0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol VCBO VCEO VEBO IC ICP PC Tj Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
102
(1)
Thermal resistance Rth (°C/W)
ea s
e
vi
si
(2)
10
1
Note: Rth was measured at Ta=25˚C and under natural convection. (1)PT=10V×0.2A(2W) and without heat sink (2)PT=10V×0.8A(8W) and with a 100×100×2mm Al heat sink
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
20 W 2.0 150 °C −55 to +150 °C Conditions Min 80 Typ
Peak collector current
or m
30
1: Base 2: Collector 3: Emitter TO-220D-A1 Package
IC = 30 mA, IB = 0
VCE = 4 V, IC = 3 A VCE = 70 V, IB = 0 VEB = 6 V, IC = 0
VCE = 70 V, VBE = 0
ICEO IEBO hFE2 fT ton tstg tf
si
vi
ea s
e
hFE1 *
VCE = 4 V, IC = 1 A
70
VCE = 4 V, IC = 3 A
10
Pl
Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
30
(1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)Without heat sink (PC=2W)
IC VCE
8
TC=25˚C
IC VBE
8
Ta=25˚C
Collector power dissipation PC (W)
25
(1)
Collector current IC (A)
at io n.
Max 1.8 100 100 1 250 0.7 0.5 4.5 0.5
2.54±0.30 5.08±0.50
Unit V V µA µA mA V MHz µs µs µs
Publication date: April 2003
SJD00276BED
1
2SD2549
PC Ta
VCE(sat)
IC = 3 A, IB = 0.375 A
VCE = 10 V, IC = 0.5 A, f = 10 MHz IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A VCC = 50 V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 70 to 150 P 120 to 250