FRF1001G中文资料

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富光 FRP-Series 高功率厚膜晶片电阻器规格说明书

￭高功率厚膜晶片电阻（High Power Thick Film Chip Resistor )￭应用（Application）- Consumerelectrical - HomeAppliance:Airconditioner,Refrigerato - Computer & relative products:Mainboard - Communication equipment:Cell phone,Faxmachine - Power equipment: Power supply,lllumination equipment - Measuring instrument: Electric meter, Navigationequipment￭特性（Features）- Small size and light weight - Reliability, high quality - High Power￭产品料号（Parts Number Explanation ）示例（Example）: FRP1206J102TS- 消费类电子 - 家电：空调，冰箱 - 计算机及相关产品：主板 - 通讯设备：手机、传真机 - 电源设备：电源、照明设备 - 测量仪器：电表、导航设备- 体积小，重量轻 - 可靠性，高质量 - 高功率￭本体标识（Marking on the Resistor's Body）￭ 0603±1% E96系列电阻值代码Standard E96 Series Resistance Value Code for 0603 ±1% Marking代码 Code 阻值 Value49 31650 32451 33252 34053 34854 35755 36556 37457 383￭ 0603±1%标记的倍增码Multiplier Code for 0603 ±1% Marking10D=124×103=124KΩ 38Y=243×10-2=2.43Ω0603 ±1%的产品，在标准E24系列中，但不属于E96系列，标示与5%的字码相同，但是在中间字码下加㇐条线（Standard E24 and not belong to E96 series values of 0603 ±1%, the marking is thesame as 5% tolerance but marking as underline ）331=33×101=330Ω 560=56×100=56Ω￭尺寸(Dimension):单位（H T1 0.30±0.03 0.23±0.03 0.10±0.05 0.50±0.05 0.35±0.05 0.20±0.10 0.80±0.10 0.45±0.10 0.25±0.15 1.25±0.10 0.50±0.10 0.35±0.20 1.60±0.10 0.55±0.10 0.45±0.20 2.60±0.15 0.55±0.10 0.45±0.15￭功率衰减曲线（ Derating Curve）工作温度范围（Operating Temperature Range ）： -55℃~+155℃; 储存条件（storage condition ）： 5～30℃, 30～75%RH.￭电阻结构（Construction）(0201)（其他）￭阻值范围（Resistance range）:￭电气特性（Electrical characteristics）Array￭电性规格（Standard Electrical Specifiations）备注：（remark）: 额定电压计算公式（The rated voltage is calculated by the following formula）：RPE=E：额定电压（Rated Voltage）(V)P：额定功率（Rated Power ）(W)R：电阻阻值（Resistance ）(ohm)如果计算出的电压超过此型别的最大工作电压，则此型别的最大工作电压为此电阻的额定电压。

MMG1001T1中文资料

Will be replaced by MMG1001NT1 in Q305. N suffix indicates 260°C reflow capable.The PFP-16 package has had lead-free terminations from its initial release.Gallium ArsenideCATV Integrated Amplifier ModuleFeatures•Specified for 79-, 112- and 132-Channel Loading•Excellent Distortion Performance•Built-in Input Diode Protection•GaAs FET Transistor Technology•Unconditionally Stable Under All Load Conditions•In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.T1 Suffix = 1,000 Units per 16 mm, 13 inch Reel.Applications•CATV Systems Operating in the 40 to 870 MHz Frequency Range•Input Stage Amplifier in Optical Nodes, Line Extenders and TrunkDistribution Amplifiers for CATV Systems•Output Stage Amplifier on Applications Requiring Low Power Dissipationand High Output Performance•Driver Amplifier in Linear General Purpose ApplicationsDescription•24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATVIntegrated Forward Amplifier ModuleTable 1. Maximum RatingsRating Symbol Value Unit RF Voltage Input (Single T one)V in+65dBmV DC Supply Voltage24 V Application12 V ApplicationV CC+26+14VdcOperating Case T emperature Range T C-20 to +100°C Storage T emperature Range T stg-40 to +100°C Table 2. Thermal CharacteristicsCharacteristic Symbol Value Unit Thermal Resistance, Junction to Case RθJC 6.6°C/WDocument Number: MMG1001Rev. 5, 7/2005 Freescale SemiconductorTechnical Data2RF Device DataFreescale SemiconductorMMG1001R2 MMG1001T1Table 3. ESD Protection CharacteristicsTest ConditionsClass Human Body Model 1 (minimum)Machine Model M1 (minimum)Charge Device ModelC5 (minimum)Table 4. Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD 22-A113, IPC/JEDEC J-STD-0203260°CTable 5. Electrical Characteristics for 24 V Application (V CC = 24 Vdc, T C = +30°C, 75 Ω system unless otherwise noted)CharacteristicSymbol Min Typ Max Unit Frequency Range BW 40—870MHz Power Gain 50 MHz 870 MHz G p ——1819——dB Slope40-870 MHzS —0.6—dB Gain Flatness (40-870 MHz, Peak to Valley)G F —0.5—dB Input Return Loss (Z o = 75 Ohms)f = 40-160 MHz f = 161-450 MHz f = 451-870 MHzIRL——211922———dBOutput Return Loss (Z o = 75 Ohms)f = 40-400 MHz f = 401-870 MHz ORL——2217——dBComposite Second Order(V out = +44 dBmV/ch., Worst Case)132-Channel FLAT (V out = +46 dBmV/ch., Worst Case)112-Channel FLAT (V out = +48 dBmV/ch., Worst Case)79-Channel FLAT CSO 132CSO 112CSO 79———-65-65-71-58-59-62dBcCross Modulation Distortion @ Ch 2(V out = +44 dBmV/ch., FM = 55 MHz)132-Channel FLAT (V out = +46 dBmV/ch., FM = 55 MHz)112-Channel FLAT (V out = +48 dBmV/ch., FM = 55 MHz)79-Channel FLAT XMD 132XMD 112XMD 79———-64-63-62-52-52-52dBcComposite Triple Beat(V out = +44 dBmV/ch., Worst Case)132-Channel FLAT (V out = +46 dBmV/ch., Worst Case)112-Channel FLAT (V out = +48 dBmV/ch., Worst Case)79-Channel FLAT CTB 132CTB 112CTB 79———-63-64-65-56-56-58dBcNoise Figure50 MHz 870 MHzNF ——44 5.05.0dB DC Current (V DC = 24 V, T C = -20°to +100°C)I DC230250265mA (continued)MMG1001R2 MMG1001T13RF Device DataFreescale SemiconductorTable 4. Electrical Characteristics for 12 V Application (V CC = 12 Vdc, T C = +30°C, 75 Ω system unless otherwise noted) (continued)CharacteristicSymbol Min Typ Max Unit Frequency Range BW 40—870MHz Power Gain 50 MHz 870 MHz G p ——1819——dB Slope40-870 MHzS —0.6—dB Gain Flatness (40-870 MHz, Peak to Valley)G F —0.5—dB Input Return Loss (Z o = 75 Ohms)f = 40-160 MHz f = 161-450 MHz f = 451-870 MHzIRL——211919———dBOutput Return Loss (Z o = 75 Ohms)f = 40-400 MHz f = 401-750 MHz f = 751-870 MHz ORL———191715———dBComposite Second Order(V out = +42 dBmV/ch., Worst Case)112-Channel FLAT (V out = +42 dBmV/ch., Worst Case)79-Channel FLAT CSO 112CSO 79——-65-71——dBcCross Modulation Distortion @ Ch 2(V out = +42 dBmV/ch., FM = 55 MHz)112-Channel FLAT (V out = +42 dBmV/ch., FM = 55 MHz)79-Channel FLAT XMD 112XMD 79——-63-62——dBcComposite Triple Beat(V out = +42 dBmV/ch., Worst Case)112-Channel FLAT (V out = +42 dBmV/ch., Worst Case)79-Channel FLAT CTB 112CTB 79——-64-65——dBcNoise Figure50 MHz 870 MHzNF ——44 5.05.0dB DC Current (V DC = 12 V, T C = -20°to +100°C)I DC190210225mA4RF Device DataFreescale SemiconductorMMG1001R2 MMG1001T1Table 6. MMG1001 50-870 MHz Test Circuit Component Designations and ValuesDesignation Description (24 V Application)Description (12 V Application)C1, C7, C8, C11220 pF Chip Capacitors (0603)220 pF Chip Capacitors (0603)C2, C3, C4, C9, C100.01 m F Chip Capacitors (0603)0.01 m F Chip Capacitors (0603)C5, C6 1.8 pF Chip Capacitors (0603) 1.8 pF Chip Capacitors (0603)C12 5.6 pF Chip Capacitor (0603) 5.6 pF Chip Capacitor (0603)D1 5.1 V Zener Diode, On/MM3Z5V1T1 5.1 V Zener Diode, On/MM3Z5V1T1D227 V Zener Diode, On/MM3Z27VT127 V Zener Diode, On/MM3Z27VT1D3Transient Voltage Suppressor,On/1.5k27A/1.5SMC27A T3Transient Voltage Suppressor,On/1.5k27A/1.5SMC27A T3L1, L222 nH Chip Inductors (0603)22 nH Chip Inductors (0603)Q1, Q2Dual Transistors Package, On/MBT3904DW1T1Dual Transistors Package, On/MBT3904DW1T1R1 2.2 k W , 1/4 W Chip Resistor (1206)820 W , 1/4 W Chip Resistor (1206)R2560 W Chip Resistor (0603)560 W Chip Resistor (0603)R382 W Chip Resistor (0603)40 W Chip Resistor (0603)R4820 W Chip Resistors (0603)150 W Chip Resistors (0603)R5820 W Chip Resistors (0603)100 W Chip Resistors (0603)R6120 W Chip Resistor (0603)120 W Chip Resistor (0603)R7 1.5 k W Chip Resistor (0603) 1.5 k W Chip Resistor (0603)R812 W , 1 W Chip Resistor (2512) 4.8 W , 1 W Chip Resistor (2512)R9, R10, R15470 W Chip Resistors (0603)470 W Chip Resistors (0603)R11, R1218 W Chip Resistors (0603)18 W Chip Resistors (0603)R13, R14910 W Chip Resistors (0603)910 W Chip Resistors (0603)R16 2 k W Chip Resistor (0603) 2.7 k W Chip Resistor (0603)R17 6.2 k W Chip Resistor (0603) 6.2 k W Chip Resistor (0603)R1815 W Chip Resistor (0603)15 W Chip Resistor (0603)R190 W Chip Resistor (0603)0 W Chip Resistor (0603)T1Input Transformer , Mot/77PC016E068Input Transformer , 77PC016E068T2Output Transformer , Mot/77PC016E061Output Transformer , 77PC016E061PCBFR4, 62 mil, εr = 4.81FR4, 62 mil, εr = 4.81MMG1001R2 MMG1001T15RF Device DataFreescale SemiconductorFigure 4. MMG1001 50-870 MHz Test Circuit Component LayoutCC = 24 VCC = 12 VFreescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.6RF Device Data Freescale SemiconductorMMG1001R2 MMG1001T1TYPICAL CHARACTERISTICS FOR 24 V APPLICATION−75−60CTB,COMPOSITETRIPLEBEAT(dBc)−65−70−85−65CSO,COMPOSITESECONDORDER(dBc)−70−75−80600−75−55f, FREQUENCY (MHz)Figure 7. Cross Modulation Distortion versusFrequencyXMD,CROSSMODULATIONDISTORTION(dBc)−60−65−70400200MMG1001R2 MMG1001T17RF Device DataFreescale SemiconductorPACKAGE DIMENSIONSCASE 978-03ISSUE CDETAIL YPFP-16Information in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. There are no express orimplied copyright licenses granted hereunder to design or fabricate any integratedcircuits or integrated circuits based on the information in this document.Freescale Semiconductor reserves the right to make changes without further notice toany products herein. Freescale Semiconductor makes no warranty, representation orguarantee regarding the suitability of its products for any particular purpose, nor doesFreescale Semiconductor assume any liability arising out of the application or use ofany product or circuit, and specifically disclaims any and all liability, including withoutlimitation consequential or incidental damages. “Typical” parameters that may beprovided in Freescale Semiconductor data sheets and/or specifications can and dovary in different applications and actual performance may vary over time. All operatingparameters, including “Typicals”, must be validated for each customer application bycustomer’s technical experts. Freescale Semiconductor does not convey any licenseunder its patent rights nor the rights of others. Freescale Semiconductor products arenot designed, intended, or authorized for use as components in systems intended forsurgical implant into the body, or other applications intended to support or sustain life,or for any other application in which the failure of the Freescale Semiconductor productcould create a situation where personal injury or death may occur. Should Buyerpurchase or use Freescale Semiconductor products for any such unintended orunauthorized application, Buyer shall indemnify and hold Freescale Semiconductorand its officers, employees, subsidiaries, affiliates, and distributors harmless against allclaims, costs, damages, and expenses, and reasonable attorney fees arising out of,directly or indirectly, any claim of personal injury or death associated with suchunintended or unauthorized use, even if such claim alleges that FreescaleSemiconductor was negligent regarding the design or manufacture of the part.Freescale t and the Freescale logo are trademarks of Freescale Semiconductor, Inc.All other product or service names are the property of their respective owners.Freescale Semiconductor, Inc. 2005. All rights reserved.How to Reach Us:Home Page:E-mail:support@USA/Europe or Locations Not Listed:Freescale SemiconductorT echnical Information Center, CH3701300 N. Alma School RoadChandler, Arizona 85224+1-800-521-6274 or +1-480-768-2130support@Europe, Middle East, and Africa:Freescale Halbleiter Deutschland GmbHT echnical Information CenterSchatzbogen 781829 Muenchen, Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)support@Japan:Freescale Semiconductor Japan Ltd.HeadquartersARCO T ower 15F1-8-1, Shimo-Meguro, Meguro-ku,T okyo 153-0064Japan0120 191014 or +81 3 5437 9125support.japan@Asia/Pacific:Freescale Semiconductor Hong Kong Ltd.T echnical Information Center2 Dai King StreetT ai Po Industrial EstateT ai Po, N.T., Hong Kong+800 2666 8080@For Literature Requests Only:Freescale Semiconductor Literature Distribution CenterP.O. Box 5405Denver, Colorado 802171-800-441-2447 or 303-675-2140Fax: 303-675-2150LDCForFreescaleSemiconductor@。

SFF1006G中文资料

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元器件交易网
RATINGS AND CHARACTERISTIC CURVES (SFF1001G THRU SFF1008G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
NUMBER OF CYCLES AT 60Hz
10
01 SF F1 0
~S FF 10 G
FF 5G ~S SF F1 00 10
0 1
30பைடு நூலகம்
04 G
2
5
10
20
50
100
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
100
Tj=25 0C
3 1
90
G 08 10 FF ~S 7G 00 F1 SF
. 2 72 ( 6 .9 ) . 2 48 ( 6 .3 )
Mechanical Data
Case: ITO-220AB molded plastic Epoxy: UL 94V-O rate flame retardant Terminals: Leads solderable per MIL-STD202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260oC/10 seconds.16”,(4.06mm) from case. Weight: 2.24 grams Mounting torque: 5 in – 1bs. max.
. 6 06 (1 5. 5) . 5 83 (1 4. 8)

(欧瑞)惠丰变频器F1000-G

6.1 参数设置………………………………………………………1158 6.2 基本调速方式…………………………………………………2180 七段速控制……………………………………………………………1292
A
惠丰变频器 F1000-G 三相 220V 系列
7.1 参数设置………………………………………………………2202 7.2 多段速度调速及组合调速方式………………………………220 八端子定义……………………………………………………………235 8.1 可定义输入端子………………………………………………235 8.2 可定义输出端子………………………………………………246 8.3 特殊输出端子…………………………………………………247 九 V/F 控制与保护…………………………………………………….2285 9.1 V/F 控制……………………………………………………….2295 9.2 定时控制……………………………………………………….3218 9.3 可设定保护功能……………………………………………….3218 十模拟输入与频率输出……………………………………………….331 附录 1 常见故障处理………………………………………………….3342 附录 2 功能码速查表………………………………………………….3353 附录 3 产品一览表及结构形式一览表……………………………….4440
图 1-1 产品铭牌示例
以 30KW 变频器为例，其型号说明如图 1-2 所示。
F1000–G 0300 T2 C
结构型式代号 (B 表示塑壳；C 表示金属壁挂式) 电源输入类型 (T2 表示三相 220VAC 输入) 适配电机功率 (30kW) 系列代号公司名称及升级代号
图 1-2 产品型号示例

JFE厚钢板中文资料12(共23页)

1座（5,500mm宽）１座１套２座１座１套 − − − −
西日本制铁所仓敷地区３座６座１座１套５座２座３座
1座（5,500mm宽）１座１套４座２座３套 − − ２套 −
西日本制铁所福山地区４座５座 − １套６座２座３座
２座（4,700mm宽）１座１套１座 − １套１座１座３套１套
SM490 A572
API 2H-50
SM490Y A573
2W-50
SN490 A633
A709 Gr. 50
A841
EN10025 S355 E295
EN10225 S355 EN10113 S355
G3106 SM520 A572 Gr. 60 API 2W-60 EN10225 S400
Gr. 65
EN10137 S890 S960
HW 885 LT360
EN10028 12Ni14
EN10028 X8Ni 9 EN10028 X7Ni 9 EN10028 P27‘5 L’
P35‘5 L’ EN10113 P27‘5 L’
P35‘5 L’ P42‘0 L’ EN10028 P46‘0 L’ LT450
API
BS
DIN
G3101 G3106 G3131
G3136
SS330 SS400 SM400 SPHC SPHD SPHE SN400
A36
API 2H-42
A131
2W-42
A283
A529
A573 Gr. 58
EN10025 S185 S235 S275
EN10113 S275
G3106 G3136

RF1001T2D中文资料

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元器件交易网
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.

78 ZIEHL industrie-elektronik UFR1001E 电压频率监测器商品说明

Voltage Monitoring Type UFRThe grid- and plant protection de-vice UFR1001E monitors voltage and frequency in plants for own generation of electricity. It com-plies with the requirements of VDE-AR-N 4105:2018-11, VDE-AR-N 4110:2018-11, G98, G99, ÖVE/ÖNORM E 8001-4-712:2009 and other standards for generators connected to the public grid.The UFR1001E is a dual-channel device and thus one-fault-proof.Voltage and Frequency Relay UFR1001EGrid- and Plant Protection VDE-AR-N 4105 and 4110, ÖVE-standard, G98 + G99, DIN V VDE 0126-1-1, VFR2013/2014, NRS 0972-1:2017 Ed 2, Synergrid C10/C11UFR1001E••••••••NEW: VDE-AR-N 4105:2018-11, VDE-AR-N 4110:2018-11Part number:S222296The function of the output-relays and of the connected switches can be monitored with feed-back contacts. When a connected switch does not switch off, the UFR does not switch on again. When a switch does not switch on it makes 2 restarts and thus improves availability of monitored plant.The limits are pre-set according to VDE-AR-N 4105-2018-11, VDE-AR-N 4105:2018-11 and other standards. They can be changed if required and be protected with a code and/or a seal.With a 2-step test both channels can be tested indivi-dually and the triggering time of connected switches is measured.The standby input allows a remote shutoff e.g. with a RCR.Under and overvoltage monitoring 15…520 VMeasuring phase-neutral or phase-phaseMonitoring of under- and overfre-quency 45…65 HzMonitoring of quality of voltage (10-minutes-average)Monitoring of vector shift 2…65°Monitoring of rate of change of frequency (ROCOF, df/dt) 0,100...5,000 Hz/sOne-fault-proof with monitoring of connected switches (defeatable), 2 automatic restarts at errorPassive anti-islanding pro-tection acc. to ch. 6.5.3 and app. D2Switching delay adjustable 0.05 … 300 sSwitching back delay adju-stable 0 … 6.000 s Preset values acc. toVDE-AR-N 4105:2018-11 (Pr2), VDE-AR-N 4105-2011-08 (Pr1)VDE-AR-N 4110:2018-11 (PR11-14) and BDEW (Pr 3-6)G98 (G83/2) and G99 (G59/3) for Great Britain ÖVE standard for AustriaVSE/EEA-CH 2014 for SwitzerlandAlarm counter for 100 alarms (trip value, cause and rel. time stamp)Record of added times of alarmsInput for standby with counter and recording of time Test button and simulation with measuring of switching-timesSealing. All values can be read-out when sealed Easy installation and programming with pre-set programsHousing for DIN-rail-mount, 105 mm wide, mounting height 66 mm•••••••••••-----Certificate of conformity Grid and Plant protection acc. to VDE-AR-N 4105 2011-08 and 2018-11 "Plants for generati-on of own energy in low voltage grid"Cerfiticate of conformity Grid and Plant protection acc. to BDEW requirement "Plants for generation of own energy in medium voltage grid"Certificates:CertificateÖVE/ÖNORM E 8001-4-712:2009-12, Anhang ACertificate of compliance DIN V VDE 0126-1-1Certificate de conformitéDIN V VDE 0126-1-1, VFR2013/VFR 2014Certificate of complianceNRS 097-2-1:2010 ed 2.0 South Africa approved Synergrid C10/C11approved Energex RED STD00233accepted by TepcoCertificate of compliance EN 50438:2013Certificate of compliance G59/3:2013, G83/2:2012, G99/1-1+2+3:2018 and G98/1-1+2:2018RD1699:2011 / RD413:2014Technical Data UFR1001EVoltage Monitoring Type UFR2AC/DC 24-270 V, 0/45...65 Hz, <5VA DC: 20,4...297 V, AC: 20,4...297 V 2 change-over contacts see operating manualAC 15...530 V (< 5 V display: 0)AC 15...520 VAC 10...310 V (< 5 V display: 0)AC 15...300 V true RMSadjustable 1,0...180 Vwith neutral: ±0,6% of measured value without neutral: ±0,8% of measured value >100V: -1 digit (resolution 1 V) <100V: -1 digit (resolution 0,1 V)3-phase with / without neutraladjustable 0,05 (± 15ms)...300,0 sadjustable 0 (approx. 200 ms)...6.000 s 40...70 Hz45,00...65,00 Hz 0,05...10,00 Hz ± 0,04 Hz ± 1 digitadjustable 0,05 (± 15ms)...300,0 s adjustable 0 (>200 ms)...6.000 s 0...90,0°2,0...65,0°< 50 msadjustable 3...240 s adjustable 2...20 s0,100...5,000 Hz/s, 4...50 cycles DC 4,5...27 Vmax. 20 mA / output DC 15...35 Vadjustable 0,5...99,0 sEN 602554000 V III 2300 V 100 %-20 °C...+55 °C -25 °C...+70 °C3K5 (except condesation and formation of ice)EN 61 000-6-2EN 61 000-6-3V690 x 105 x 69 mm, mounting height 66 mm IP30IP20DIN-rail 35 mm according to EN 60 715 or screws M4ca. 250 gPower supply Rated supply voltage UsMeasurement phase-phase Setting range phase-phaseMeasuring voltage phase-neutral Setting range phase-neutral Measurement method HysteresisMeasurement accuracy Accuracy of display Measurement functions Switching-delay (dAL)Switching-back-delay (doF)Measurement range Setting range HysteresisMeasurement accuracy Switching delay (dAL)Switching-back-delay (doF)Measurement range Setting rangeSwitching-delay (dAL)Switching-back-delay (doF)Delay at Us on Setting range Voltage I1Current Q1...Q5Voltage Y0...Y1/2Switching time connected swit-chesRated impulse voltage Overvoltage category Pollution degreeRated Insulation voltage Ui Operating timeOperating temperature Storage temperatureClimatic conditions (IEC/EN 60721-3-3)EMC - immunity EMC - emissionDesignDimensions (h x w x d) Protection housing Protection terminals Attachment WeightHousingRelay output Test ConditionsVoltageFrequencyVector-ShiftDigital outputs insulated Input Feed-back-contactsROCOF (df/dt)。

AIT1001非接触式红外测温模块说明书

AIT1001说明书非接触式红外测温模块●MEMS热电堆技术●快速响应●带NTC补偿●I2C通讯，PWM输出●应用广泛产品简述AIT1001是一款数字信号与PWM模拟信号双输出型的红外热电堆模块，包含MEMS热电堆芯片、NTC热敏电阻以及信号处理电路。

产品具有体积小、精度高、质优价廉等优点。

应用范围AIT1001适用于需要非接触方式进行测温的场景，如冰箱、吸油烟机和空调等家用电器、汽车空调、室内暖气、手持设备以及医疗设备应用等。

图1.AIT1001实物图1.极限额定值表1.极限额定值2.性能参数及电气接口表2.模块性能参数表表3.电气接口说明注：上拉电阻的阻值推荐4.7kΩ。

AIT1001对应表3的电气接口如图2所示，其中端子规格为MX1.25-5PIN端子座。

图2.电气接口图3.产品尺寸图图3.产品尺寸图（单位：mm，公差：±0.3mm）4.通用寄存器表4.通用寄存器说明如需校准uValAdj或NtcAdj参数时，应将模块放置在与被测物体温度相同的环境中，根据如下条件进行校准：1、AIT1001模块输出的NTC温度应与环境温度相同，若偏差过大（>±0.5℃）可将修正值写入NtcAdj寄存器进行校准；2、热电堆电压uVal应在-15~+15µV内，若偏差过大可将修正值写入uValAdj寄存器进行校准。

发射率（Coef）是指被测物体表面辐射出的能量与相同温度的黑体辐射出的能量的比率。

不同的物体，其发射率亦有所不同，可根据实际使用需要进行修改。

5.I2C数字协议AIT1001遵循I2C总线规范，并需作为从机使用。

SCL为时钟输入线，SDA为串行数据输入/输出线。

表5.I2C通讯说明表6.I2C时序及CRC校验6.1读取模块数据的时序在一个I2C完整的Start-Stop读取模块数据通信中，每个寄存器数据后跟随一个对该寄存器数据的CRC校验字节，其CRC校验码字节的计算是对该寄存器数据字节进行CRC计算所得，如图4所示。

GS100102;GS100101;中文规格书,Datasheet资料

SpecificationsThe GS1001-1002 series gear tooth sensors are Hall Effect devices designed for use in applications where ferrous edge detection or near zero speed sensing (without power uprecognition) is needed. Current sinking output requires the use of a pull up resistor. Circuit protected with adjustable stainless steel housingFeatures and Benefits∙ Immune to rotational alignment∙ ESD resistant to 4kV (contact discharge) ∙ Mating connector: Delphi 12162280∙Discrete wire version: 22awg, tin plated polyolefin insulation.Applications∙ CNC machine tools ∙ Transmission speed∙Industrial feedback controlNote: These sensors require the use of an external pull-up resistor, the value is dependent upon the supply voltage. Pull-up resistor should be connected between output (Black) and Vcc (Brown). See chart on next page for recommendations.Dimensions mmGS100101 GS100102GS100201 GS100202Mechanical SpecificationsAirgrap Application dependentMaximum Installation Torque 50 in-lbs (for a ¼ - 20 Hex Cap screw)Electrical SpecificationsOperating Voltage Range 5 - 24 VDCSupply Current 6 mA maxOutput Saturation Voltage 400 mV maxOutput Current 20 mA maxOperating Temperature -40° to +125°CStorage Temperature Range-40° to +125°COutput Rise time 5μSOutput Fall time 5μSElectrostatic Discharge Immunity + 3kV indirect contact, + 4kV direct contactElectric Field Radiated Immunity At 10V/m (using 30% amplitude modulation @ 1kHz) from 26Mz to 1000 MHz Electrical Fast Transient Test + 2kV on DC power supplyMagnetic Field Immunity Test Subjected to 30 A/m at 50 HzConducted Immunity Test Injected with 10Vrms from 150kHz to 80 MHzDielectric Withstand Voltage MIL-STD-202F, Method 301 1000V applied for a minimum of one minute. Insulation Resistance MIL-STD-202F, Method 302, Test Condition B 500V applied for one minute.Water Immersion MIL-STD 202F, Method 104, Test Condition ASalt Spray MIL-STD-202F, Method 101, Test Condition BSinusoidal Vibration MIL-STD-202F Method 204, Test Condition C from 55-2000 HzRandom Vibration MIL-STD-20F Method 214, Test Condition ICMechanical Shock 18 shocks at 50g’s 11ms per Mil Std 202FRecommended external pull-up resistor: Open Collector Sinking Block DiagramSpecifications subject to change without notice.ContactCall, fax or visit our websiteFor more information.ZF Electronics Corporation11200 88th AvenuePleasant Prairie, WI 53158Phone: 262.942.6500Web: E-Mail: cep_sales@Fax: 262.942.6566© 2008 ZF Electronics CorporationRevised 050311分销商库存信息:CHERRYGS100102GS100101。

FRAF1001G_1中文资料

Dimensions in inches and (millimeters)Version: A06FRAF1001G - FRAF1007GIsolated 10 AMPS. Glass PassivatedFast Recovery RectifiersITO-220ACPIN 1PIN 2Case PositiveFeaturesGlass passivated chip junction. High efficiency, Low VF High current capability High reliabilityHigh surge current capability Low power lossMechanical DataCases: ITO-220AC molded plasticEpoxy: UL 94V-0 rate flame retardantTerminals: Pure tin plated, Lead free. Leads solderable per MIL-STD-202, Method 208 guaranteedPolarity: As markedHigh temperature soldering guaranteed:260 oC /10 seconds 0.25”,(6.35mm) from case.Mounting position: Any Weight: 2.24 gramsMounting torque: 5 in – 1bs. max. Maximum Ratings and Electrical Characteristics Rating at 25o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%Type NumberSymbol FRAF 1001G FRAF 1002G FRAF 1003G FRAF 1004G FRAF 1005G FRAF 1006G FRAF 1007GUnitsMaximum Recurrent Peak Reverse Voltage V RRM 50 100200 400 600 8001000 V Maximum RMS Voltage V RMS 35 70 140 280 420 560700 V Maximum DC Blocking VoltageV DC 50 100200 400 600 8001000 VMaximum Average Forward Rectified Current @T C = 55 o CI (AV) 10 APeak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method )I FSM 150 AMaximum Instantaneous Forward Voltage @ 10A V F 1.3 VMaximum DC Reverse Current @ T C =25 oC at Rated DC Blocking Voltage @ T C =125 o C I R5.0 100 uAuAMaximum Reverse Recovery Time ( Note 2 ) Trr 150 250 500 nS Typical Junction Capacitance ( Note 1 ) T J=25 o C Cj 60 pFTypical Thermal Resistance (Note 3) R θJC 5.0 oC/WOperating and Storage Temperature RangeT J ,T STG -65 to +150 oCNotes:1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.2. Reverse Recovery Test Conditions: I F =0.5A, I R =1.0A, I RR =0.25A3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate.RATINGS AND CHARACTERISTIC CURVES (FRAF1001G THRU FRAF1007G)FIG.1-MAXIMUM FORWARD CURRENT DERATINGCURVER O F E G A R E V A T N E R R U C D R A W )A (.005100105108642CASE TEMPERATURE.(C)oFIG.3-MAXIMUM NON-REPETITIVE FORWARDP E A K F O R W A R D S U R G E C U R R E N T .(A )125102010050NUMBER OF CYCLES AT 60HzC A P A C I T A N C E .(p F )REVERSE VOLTAGE.(V)FIG.6-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM50WNONINDUCTIVE1W NONINDUCTIVEOSCILLOSCOPE (NOTE 1)PULSEGENERATOR (NOTE 2)DUT(+)50Vdc (approx)(-)NOTES:1.Rise Time=7ns max.Input Impedance=1megohm 22pf2.Rise Time=10ns max.Sourse Impedance=50ohms(-)(+)10WNONINDUCTIVE-1.0A0+0.5AFOR Version:A06FIG.5-TYPICAL INSTANTANEOUSI N S T A N T A N E O U S F O R W A R D C U R R E N T .(A )INSTANTANEOUS FORWARD VOLTAGE.(V)0.60.81.01.21.41.61.82.0FIG.2-TYPICAL REVERSE CHARACTERISTICSPERCENT OF RATED PEAK REVERSE VOLTAGE.(%)I N S T A N T A N E O U S R E V E R S E C U R R E N T .A )。

FS100R12KT3中文资料

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IGBT-Module IGBT-modules

调压器技术资料

G
终端连接形式一般来说，对于确定的调压器尺寸，以下的终端连接形式宜于采用： ● NPT 螺钉连接或管座焊接：2 英寸（DN50）以及
更小尺寸。 ● 平焊接：1- 英寸（DN25）及更大尺寸。 ● 法兰焊接：1- 英寸（DN25）及更大尺寸。注意：并非所有的终端连接形式对于任何调压器均适用。
控制线路对于压力记录来说，控制线路由下游的减压调压器和上游的背压调压器连接而成。典型的大型自力式调压器具有外置式控制线路，而小型的自力式调压器具有内置式压力记录装置来取代控制线路。大多数指挥器作用式调压器都具有外置式控制线路，但在使用具体的调压器时，必须予以确定。
所需材料调压器的结构材料通常取决于其实际的应用情况。标准材料包括： ●铝 ● 锻铁或球墨铸铁 ●钢 ● 铜或黄铜 ● 不锈钢
处理过程中所需要的特殊材料可能影响到可使用的调压器类型。如：供氧设备需要特殊的材料，并要求调压器内没有油或润滑油。
需使用关闭控制型调压器的实际情况包括以下几中： ● 燃烧器控制。在燃烧起中，燃料 / 空气的比值是影
G
G-5
技术资料
调压器介绍
调压器调压器用于维持所需要的减小后的出口压力，同时提供为确保下游流量所需的流体流动。调压器所要维持的压力就是它的出口压力设定值。
真空泵
被限制的真空空间
真空断路器色标
入口压力控制压力（真空）大气压
大气压或实际压力
被控制的真空空间
入口压力出口压力负载压力大气压
调压器的类型这一节中介绍了不同型号的调压器、所有的调压器都可以被划分成以下两种类型：
1. 直接作用式（也称作自控型） 2. 指挥器控制式
自力式调压器自力式调压器广泛应用于出口压力小于1 psig（0.069 bar）的情况，可作为更高出口压力的第一步粗略的减压。尽管更精细的控制可根据具体的应用需求达到，但它通常可产生的压力变化为 10％～20％。

SFF1005G中文资料

. 6 06 (1 5. 5) . 5 83 (1 4. 8)
. 11 0 (2 .8 ) .09 8 ( 2 . 5 )
. 5 43 (1 3. 8) . 5 12 (1 3. 2)
PIN 1 PIN 3 PIN 2 Positive CT
Dimensions in inches and (millimeters)
- 274 -
元器件交易网
RATINGS AND CHARACTERISTIC CURVES (SFF1001G THRU SFF1008G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
SF
1 2
1.2
1.4
1.6
1.8
5
10
20
50
100
200
500
1000
REVERSE VOLTAGE. (V)
FORWARD VOLTAGE. (V)
- 275 -
元器件交易网
SFF1001G THRU SFF1008G
Isolation 10.0 AMPS. Glass Passivated Super Fast Rectifiers
Voltage Range 50 to 600 Volts Current 10.0 Amperes
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SFF SFF SFF SFF Type Number

CP1001中文资料

CP1000 THRU CP1008SINGLE-PHASE SILICON BRIDGEVOLTAGE - 50 to 800 Volts CURRENT - P .C. MTG 3A, HEA T-SINK MTG 10AFEATURESl Surge overload rating—200 Amperes peak l Low forward voltage drop and reverse leakage l Small size, simple installationl Plastic package has Underwriter Laboratory Flammability Classification 94V-Ol Reliable low cost construction utilizing molded plastic techniqueMECHANICAL DA TACase: Molded plastic with heatsink integrally mounted in the bridge encapsulation Terminals: Leads solderable per MIL-STD-202, Method 208Weight: 0.21 ounce, 6.1 gramsMACXIMUM RA TINGS AND ELECTRICAL CHARACTERISTICSAt 25¢J ambient temperature unless otherwise noted; resistive or inductive load at 60Hz .CP1000CP1001CP1002CP1004CP1006CP1008UNITS Max Recurrent Peak Rev Voltage 50100200400600800V Max Bridge Input Voltage RMS3570140280420560VMax Average Rectified Output at T C =50¢J *See Fig. 2 at T C =100¢J * at T A =50¢J **10.03.03.0A A Peak One Cycle Surge Overload Current 200A Max Forward Voltage Drop per element at 5.0A DC & 25¢J . See Fig. 31.1VMax Rev Leakage at rated Dc Blocking Voltage per element at 25¢J See Fig 4 at100¢J10.01.0£g A m A Typical junction capacitance per leg (Note 4) CJ200P F I 2t Rating for fusing ( t<8.3ms)164A 2S Typical Thermal Resistance (Note 2) R £K JA Typical Thermal Resistance (Note 3) R £K JC 255¢J /W Operating Temperature Range -55 TO +125¢J Storage Temperature Range-55 TO +150¢JNOTES:* Unit mounted on metal chassis.** Unit mounted on P.C. board.1. Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw.2. Units Mounted in free air, no heatsink. P .C.B at 0.375”(9.5mm) lead length with 0.5¡Ñ0.5” (12¡Ñ12mm)copper pads.3. Units Mounted on a 3.0¡Ñ3.0” ¡Ñ0.11” thick (7.5¡Ñ7.5¡Ñ0.3cm) AL plate heatsink.4. Measured at 1.0MHZ and applied reverse voltage of 4.0 volts.CP-10RATING AND CHARACTERISTIC CURVES CP1000 THRU CP1008NO. OF CYCLES AT 60HzAMBIENT TEMPERATURE, ¢JFig. 1-NON-RECURRENT SURGE RATINGFig. 2-DERATING CURVE FOR OUTPUT RECTIFIEDCURRENT0 0.2 0.4 0.6 0.8 1.0 1.2 1.4INSTANTANEOUS FWD VOLTAGE, VOLTSPERCENT OF RATED PEAK REVERSE VOLTAGEFig. 3-TYPICAL FORWARD CHARACTERISTICS(25¢J )Fig. 4-REVERSE CHARACTERISTICS。

质量流量计.操作手册.F系列传感器

过程在管道中安装传感器时，请参阅图 3 。图 3 安装传感器
注意 • 不得用传感器来支撑管道。 • 传感器不需要外部支撑。法兰可在所有方向支撑传感器。
不要通过电子部件或吹扫接头提升传感器。通过电子部件或吹扫接头提升传感器可能会损坏设备。
安装手册
5
安装方式
安装高温型传感器的电子部件
高温型 F 系列传感器的电子部件安装在 32″ (812 mm) 预装挠性管的末端。电子部件必须单独安装在墙上或仪表柱上。高温型传感器的电子部件如图 4 所示。图 4 高温型传感器电子部件
安装手册 P/N 20002132, Rev. CA 2010 年 6 月
高准 F 系列科里奥利流量和密度传感器
计划
安装方式
接线
接地
安全和认证信息根据本手册中的说明，在正确安装设备时高准产品符合所有适用的欧洲规范。有关适用本产品规范的相关信息，请参考欧洲规范的符合性声明。所有适用欧洲规范的 EC 符合性声明以及完整的 ATEX 安装图纸和说明可通过网站 /atex或通过当地的高准支持中心获取。符合压力设备规范的设备所附信息可通过网站/documentation获取。对于欧洲的危险环境安装，如果本国没有相关标准，可参考标准 EN 60079-14。
• 如要选择电子设备选项，该图只可用作一般指导。如果过程条件接近灰色区域，使用接线盒以外的电子设备选项就可能不合适。请咨询当地高准机构。
安装手册
3
计划图 2 高温型 F 系列传感器的环境限制
注意
• 当环境温度低于 –40 °F (–40 °C) 时，必须对核心处理器或 2400S 型变送器采取伴热措施，使其所处环境温度介于 –40 °F (–40 °C) 和 +140 °F (+60 °C) 之间。建议不要将电子设备长期储存在低于 –40 °F (–40 °C) 的环境温度中。

FR1601G中文资料

FR1601G – FR1607G16A FAST RECOVERY GLASS PASSIVATED RECTIFIERSingle Phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.CharacteristicSymbol FR 1601G FR 1602G FR 1603G FR 1604G FR 1605G FR 1606G FR 1607G UnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWM V R 501002004006008001000V RMS Reverse VoltageV R(RMS)3570140280420560700V Average Rectified Output Current @T C = 105°C I O16ANon-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)I FSM 150A Forward Voltage @I F = 8.0A V FM 1.3V Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 125°C I RM 5.0100µA Reverse Recovery Time (Note 1)t rr 150250500nS Operating and Storage Temperature RangeT j , T STG-65 to +150°CNote: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.W T EWER SEMICONDUCTORS04812160255075100125150175I ,A V E R A G E F O R W A R D C U R R E N T(A V )T ,CASE TEMPERATURE ( C )Fig.1,Typical Forward Current Derating CurveC °0.111010010000.60.81.01.21.41.6 1.82.0I ,I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )F V ,INSTANTANEOUS FORWARD VOLTAGE (V)Fig.3,Typical Instantaneous Forward Characteristics F0100200300110100I ,P E A K F O R W A R D S U R G E C U R R E N T (A )F s m NUMBER OF CYCLES AT 60HzFig.2Max Non-Repetitive Peak Surge Current1.01010010001.010100C ,C A P A C I T A N C E (p F )j V ,REVERSE VOLTAGE (V)Fig.4Typical Junction CapacitanceR 50NI (Non-inductive)Ω10NIΩSet time base for 5/10ns/cm+0.5A0A -0.25A-1.0ANotes:1.Rise Time =7.0ns max.Input Impedance =1.0M ,22pF.2.Rise Time =10ns max.Input Impedance =50.ΩΩFig.5Reverse Recovery Time Characteristic and Test CircuitORDERING INFORMATIONProduct No.Package TypeShipping QuantityFR1601G TO-22050 Units/Tube FR1602G TO-22050 Units/Tube FR1603G TO-22050 Units/Tube FR1604G TO-22050 Units/Tube FR1605G TO-22050 Units/Tube FR1606G TO-22050 Units/Tube FR1607GTO-22050 Units/TubeShipping quantity given is for minimum packing quantity only. For minimum orderquantity, please consult the Sales Department.Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice.WARNING : DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval.We power your everyday.Won-Top Electronics Co., Ltd.No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410Fax: 886-7-822-5417Email: sales@Internet: 。

IP1001中文资料

• 3.3V to 12V input voltage 1•20A maximum load capability, with no derating up to T PCB = 90°C • 5 bit DAC settable, 0.925V to 2V output voltage range 2•Configurable down to 3.3Vin & up to 3.3Vout with simple external circuit 3•200kHz or 300kHz nominal switching frequency •Optimized for very low power losses •Over & undervoltage protection •Adjustable lossless current limit•Internal features minimize layout sensitivity *•Very small outline 14mm x 14mm x 3mmFull Function Synchronous Buck Power BlockIntegrated Power Semiconductors, Control IC & PassivesThe iP1001 is a fully optimized solution for high current synchronous buck applications requiring up to 20A.The iP1001 is optimized for single-phase applications, and includes a full function fast transient response PWM control, with an optimized power semiconductor chip-set and associated passives, achieving benchmark power density. Very few external components are required, including output inductor, input & output capacitors.Further range of operation to 3.3Vin can be achieved with the addition of a simple external boost circuit, and operation up to 3.3Vout can be achieved with a simple external voltage divider.iPOWIR technology offers designers an innovative board space-saving solution for applications requiring high power densities. iPOWIR technology eases design for applications where component integration offers benefits in performance and functionality. iPOWIR technology solutions are also optimized internally for layout,heat transfer and component selection.DescriptioniP1001 Power BlockFeatures* Although, all of the difficult PCB layout and bypassing issues have been addressed with the internal design of the iPOWIR block, proper layout techniques should be applied for the design of the power supply board. There are no concerns about unwanted shutdowns common to switching power supplies, if operated as specified. TheiPOWIR block will function normally, but not optimally without any additional input decoupling capacitors. Input decoupling capacitors should be added at Vin pin for stable and reliable long term operation. No additional bypassing is required on the Vdd pin. See layout guidelines in datasheet for more detailed information.PD - 94336c05/20/03iP1001 1iP1001Absolute Maximum Ratings Recommended Operating ConditionsElectrical Specifications @ VDD = 5V & TPCB0°C - 90°C (Unless otherwise specified)All specifications @ 25°C (unless otherwise specified) 2 3iP1001Electrical Specifications (continued)Notes :1 For Vin less than 4.5V requires external 5V DD supply.2 Can be modified to operate up to 3.3V OUT , outside of DAC settable range. See Design Guidelines on how to setoutput voltage greater than 2V.3 See design guidelines.4 See Fig.5 for Recommended Operating Area4iP1001Fig 1. Power Loss vs CurrentFig 2. Safe Operating Area (SOA) vs T PCBAdjusting the Power Loss and SOA curves for different operating conditionsTo make adjustments to the power loss curves in Fig. 1, multiply the normalized value obtained from the curves in Figs. 3,or 4 by the value indicated on the power loss curve in Fig. 1. If multiple adjustments are required, multiply all of the normalized values together, then multiply that product by the value indicated on the power loss curve in Fig. 1. The resulting product is the final power loss based on all factors.To make adjustments to the SOA curve in Fig. 2, determine the maximum allowed PCB temperature in Fig. 2 at the required operating current. Then, add the correction temperature from the normalized curves in Figs. 3 or 4 to find the final maximum allowable PCB temperature. When multiple adjustments are required, add all of the temperatures together, then add the sum to the PCB temperature indicated on the SOA graph to determine the final maximum allowable PCB temperature based on all factors.Note: If input voltage <5Vin nominal operation is required then first see Fig. 5 for maximum current capability limit.Operating Conditions for the examples below:Output Current = 20A Input Voltage = 7VOutput Voltage = 2.5VAdjusting for Maximum Power Loss:(Fig. 1)Maximum power loss =5 W(Fig. 3)Normalized power loss for output voltage ≈1.14(Fig. 4)Normalized power loss for input voltage ≈0.89Adjusted Power Loss = 5W x 0.89 x 1.14 ≈ 5.07WAdjusting for SOA Temperature:(Fig. 2)SOA PCB Temperature = 90°C(Fig. 3)Normalized SOA PCB Temperature for output voltage ≈ -4.5°C (Fig. 4)Normalized SOA PCB Temperature for input voltage ≈ 4°C Adjusted SOA PCB Temperature = 90°C + 4°C -4.5°C ≈ 89.5°CGuaranteed Performance Curves0.00.51.01.52.02.53.03.54.04.55.002468101214161820Output Current (A)P o w e r L o s s (W )2468101214161820220102030405060708090100110120130PCB Temperature (°C)O u t p u t C u r r e n t (A ) 5iP1001Fig 4. Normalized Power Loss vs V INFig 3. Normalized Power Loss vs V OUTFig 5. Recommended Operating AreaFor 200kHz frequency setting there will be a 10% power loss reduction and a positive PCB temperature adjustment of 3°C.Typical Performance CurvesOutput Voltage (V)05101520250.91.21.51.82.12.42.73.03.3Input Voltage (V)SOA PCB Temperature Adjustmentltage (°C)SOA PCB Temperature Adjustmentltage (°C)P o w e r L o s s (N o r m a l i z e d )P o w e r L o s s (N o r m a l i z e d )Output Voltage (V)L o a d C u r r e n t (A )0.880.941.001.061.121.181.241.301.360.91.3 1.72.1 2.5 2.93.3-13-11-9-6-4-20240.830.860.890.910.940.971.00345678910111201234566iP1001D4 D3 D2 D1 D0 OUTPUTVOLTAGE(V)0 0 0 0 0 2.00 0 0 0 0 1 1.95 0 0 0 1 0 1.90 0 0 0 1 1 1.85 0 0 1 0 0 1.80 0 0 1 0 1 1.750 0 1 1 0 1.70 0 0 1 1 1 1.65 0 1 0 0 0 1.60 0 1 0 0 1 1.55 0 1 0 1 0 1.50 0 1 0 1 1 1.45 0 1 1 0 0 1.40 0 1 1 0 1 1.35 0 1 1 1 0 1.30 0 1 1 1 1 Shutdown* 1 0 0 0 0 1.275 1 0 0 0 1 1.250 1 0 0 1 0 1.225 1 0 0 1 1 1.200 1 0 1 0 0 1.175 1 0 1 0 1 1.150 1 0 1 1 0 1.125 1 0 1 1 1 1.100 1 1 0 0 0 1.075 1 1 0 0 1 1.050 1 1 0 1 0 1.025 1 1 0 1 1 1.000 1 1 1 0 0 0.975 1 1 1 0 1 0.950 1 1 1 1 0 0.925 1 1 1 1 1Shutdown** Shutdown : Upon receipt of the shutdown code (per VID code table above), both FET s are turned OFF and the output is discharged as the undervoltage protection is activated.Table 1. VID Code Table 2Fig 6. Overcurrent adjustment settings using R LIM7iP1001Table 2. Pin DescriptioniP100189iP1001Fig 8. Recommended PCB Footprint (Top View)NCNC NC NC NC NC NCNC NC NCNC NCNC NC NC NC NC NC NC NC NC NC NCNC NC NCNCNC NC NC NC NCNC NCNCENABLEPGOOD D0D1D2D3D4 V DDV SWPGNDPGNDV ING N D SSGND FREQ ILIMV FNC V FSiP1001iP1001 User’s Design GuidelinesThe iP1001 is a 20A power block that consists of optimized power semiconductors, PWM control and its associated passive components. It is based on a synchronous buck topology and offers an optimized solution where space, efficiency and noise caused by stray parasitics are of concern. The iP1001 com-ponents are integrated in a ball grid array (BGA) pack-age where the electrical and thermal conduction is accomplished through solder balls. FUNCTIONAL DESCRIPTIONVINThe standard iP1001 operating input voltage range is 5V to 12V. The input voltage can also be easily configured to run at voltages down to 3.3V.FREQThe PWM control is pseudo current mode. The ESR of the output filter capacitor is used for current sens-ing and the output voltage ripple developed across the ESR provides the PWM ramp signal.iP1001 offers two switching frequency settings, 200kHz and 300kHz. At a given setting the switching frequency will remain relatively constant indepen-dent of load current.VDD(+5V bias)An external 5V bias supply is required to operate the iP1001. In applications where input voltages are lower than 4.5V, and where 5V is not available, aspecial boost circuit is required to supply VDD with 5V(as shown in the reference design). Soft Start, VDDUndervoltage LockoutWhen VDD rises above 4.2V a soft start is initiated byramping the maximum allowable current limit. The ramp time is typically 1.8ms. An external capacitor can be added across the current limit resistor from ILIM to PGND to provide up to 5ms ramp time. Select the capacitor according to the 10nf/ms rule. PGOODThe PGOOD comparator constantly monitors VFfor undervoltage. A 5% drop in output voltage can cause PGOOD to go low. PGOOD pin is internally pulled-up to VDDthrough a 100K, 5% resistor. If it is desired to use the PGOOD signal to enable another stage using iP1001, then it is recommended to filter and buffer PGOOD to prevent transients appearing at the output from pulling PGOOD low.OVP (Output Overvoltage Protection)If the overvoltage trip 2.25V threshold is reached, the OVP is triggered, the circuit is shutdown and the bottom FET is latched on discharging the output filter capacitor. Pulling ENABLE low resets the latch. The overvoltage trip threshold is scaled accordingly, if output voltages greater than 2V are set through voltage dividers.UVP (Output Undervoltage Protection)The Output Undervoltage Protection trip threshold is fixed at 0.8V. If ENABLE is pulled up and VFis below 0.8V for a duration of 10-20ms, the PWM will be in a latched state, with the bottom FET latched on, and will not restart until ENABLE is recycled.DAC Converter (D0-D4)The output voltage is programmed through a 5-bit DAC (see the VID code in table 1). The output volt-age can be programmed from 0.925V to 2V. To elimi-nate external resistors, the DAC pins are internally pulled up. To set for output voltages above 2V, the DAC must be set to 2V and a resistor divider,R3 & R4 (see Fig 10.), is used. The values of the resistors are selected using equation 1.Equation 1 : Vout = VFx (1 + R3/R4)where VFis equal to the DAC settingand R4 is recommended to be ~1kΩTable 3 - iP1001 Operating Truth Table10 11iP1001DESIGN PROCEDUREInductor SelectionThe inductor is selected according to the following expression.L = V OUT x (1-D) / (fsw x ∆I L )where, D = VOUT/ VINV OUT is the output voltage in Volts,fsw is the switching frequency in kHz,∆I L is the output inductor ripple current.The inductor value should be selected from 0.8µH to 2.0µH range.Output Capacitor SelectionUse tantalum or POSCAP type capacitors for iP1001.Selection of the output capacitors depends on several factors.•Low effective ESR for ripple and load transient requirements.•Stability.To support the load transients and to stay within a specified voltage dip ∆V due to the transients, ESR selection should satisfy the following equation:R ESR ≤ ∆V/∆Iwhere, ∆I is the transient load stepIf output voltage ripple is required to be maintained at specified levels then, the following expression should be used to select the output capacitors.R ESR ≤ V p-p / ∆I Lwhere, V p-p is the peak to peak output voltage ripple.The value of the output capacitor ESR zero frequency also determines stability. The value of the ESR zero frequency is calculated by the expression:R ESR = 1 / (2π x f ESR x C OUT )A 470µF POSCAP capacitor has a maximum 35m Ωof ESR which provides 9.7kHz zero frequency.The ESR zero frequency must be set below 12kHz.This value is calculated assuming the capacitor datasheet maximum ESR value.Example:To determine the amount of capacitance to meet a 30mVp-p output ripple, with 4A inductor current ripple requirement.The calculated ESR will be = 30mV/4A =7.5m Ω. This will require 5 x 470uF POSCAP capacitors. The total ESR will result in a 9.7kHz zero frequency.For stable operation:• Set the resonant frequency f o of the output inductor and capacitor between 2kHz and 4kHz.The resonant frequency is calculated using the following expression:f o = 1/ (2π x (√LC))• Select the output inductor value between 0.8µHto 2.0µH and the output capacitance between 1880µF (4x 470µF) and 5600µF (12x470µF)• Set the minimum output ripple voltage to begreater than 0.5% of the output voltage. Select the capacitor by ESR and by voltage rating rather than capacitance.External Input Capacitor SelectionThe switching currents impose RMS current requirements on the input capacitors. The following expression allows the selection of the input capacitors, based on the input RMS current:I RMS = I LOAD x ( √D x (1-D))where, D = V OUT /V IN12iP1001Application IssuesSetting V OUT above 2VIn certain applications where the output voltage is required to be set higher than the maximum DAC code setting of 2V, it is possible to use an external resistive voltage divider which, for accuracy, needs to have 1% or better tolerance. The switching frequency should be set at 200kHz by connecting the FREQ pin to V DD . Also, the output voltage should never be set higher than 3.3V with a V IN minimum of 5V, or 2.5V with a V IN minimum of 3.3V. The DAC code should be set to 2V and the following equation used to select the resistors:V OUT = V F x (1 + R3/R4)See the reference design for reference designators.Note that the impedance at V F is 180K Ω ±35%. It is recommended that R3 be calculated assuming a value of 1k Ω for R4. Connect V FS to V F and GNDS to PGND.Duty Cycle D = V OUT / V IN >50%For duty cycles >50% the switching frequency should be set at 200kHz. 300kHz switching frequency can be selected if the output is less than 2V and the duty cycle is <50%.For duty cycles >50%, add external compensation ramp from the Vsw terminal of the iP1001 device as shown in the reference design through R9 resistor and C21 capacitor (Fig 10a.). For optimum perfor-mance maintain a RC time constant of approximately 5µs. 13iP1001For stable and noise free operation of the whole power system it is recommended that the designer uses to the following guidelines.1. Follow the layout scheme presented in Fig.9.Make sure that the output inductor L1 is placed as close to the iP1001 as possible to prevent noise propagation that can be caused by switching of power at the switching node V SW , to sensitive circuits.2. Provide a mid-layer solid ground with connections to the top layer through vias. The two PGND pads of the iP1001 also need to be connected to the same ground plane through vias.3. Do not connect SGND pins of the iP1001 to PGND.4. To increase power supply noise immunity, place input and output capacitors close to one another, as shown in the layout diagram. This will provide short high current paths that are essential at the ground terminals.Fig 9. iP1001 suggested layout5. Although there is a certain degree of V IN bypassing inside the iP1001, the external input decoupling capacitors should be as close to the device as possible.6. In situations where the load is located at an appreciable distance from the iP1001 block, it is recommended that at least one or two capacitors be placed close to the iP1001 to derive the V F signal.7. The V F connection to the output capacitors should be as short as possible and should be routed as far away from noise generating traces as possible.8. V FS & GNDS pins need to be connected at the load for remote sensing. If remote sensing is not used connect V FS to V F and GNDS to PGND.9. Refer to IR application note AN-1029 to determine what size vias and what copper weight and thickness to use when designing the PCB.Layout GuidelinesInput TerminalLoad T erminalV OUTOutput Caps (C OUT )Input Caps (C IN )V INPGNDV SWOutput Inductor (L 1)PGNDiP1001 BlockiP1001The schematics in Fig.10a & 10b and complete Bill of Materials in Table 4 are provided as a reference design to enable a preliminary evaluation of iP1001. They represent a simple method of applying the iP1001 solution in a synchronous buck topology. Fig. 10a shows the implementation for <5VIN nominal applications, and Fig. 10b shows theimplementation for 5VIN - 12VINnominalapplications.The connection pins are provided through the solder balls on the bottom layer of the package. A total power supply solution is presented with the addition of inductor L1 and the output capacitors C11-C14. Input capacitors C1-C10 are for bypassing in the5VIN - 12VINapplication, but only C1-C3 are requiredfor <5VIN applications (refer to the BOM for values).Switches 1-5 of SW1 are used to program the output voltage. Refer to the VID table provided in this datasheet for the code that corresponds to the desired output voltage. Resistors R2 & R4 need to be removed for operation at standard VID levels (0.925V - 2.0V, leave R3 = 0Ω). Switch 8 of SW1 enables the output when floating (internally pulledhigh). The 5V VDD power terminal and input powerterminals are provided as separate inputs. They can be connected together if the application requires only 5V nominal input voltage.The reference design also offers a higher output voltage option for greater than 2.0V, up to 3.3V. For output voltages above 2V, the DAC setting must be set to 2V, and then select resistors R3 & R4 per Equation 1 on page 10 for the desired output volt-age. Remove R5 and connect VF to VFSthrough R2,where R2=0Ω. In this case, GNDS should be refer-enced to PGND. Tighter regulation can be achieved by using resistors with less than 1% tolerance. For Vin < 5V and Vout > 2V, the frequency select pin (FREQ) must be set to 200kHz (connected to VDD).For applications with VIN < 5V and where there is noauxiliary 5V available, connections JP2 and JP3 must be provided in order to enable the boost cir-cuit. This will provide 5V VDD necessary for theiP1001 internal logic to function. The boost circuit will convert 3.3V input voltage to 5V, to power theVDD , and will provide enough power to supply theinternal logic for up to five iP1001 power blocks.iP1001 Reference Design 1415iP1001Fig 10a. - Reference Design Schematic For <4.5V INFig 10b. - Reference Design Schematic For 5V IN - 12V IN Nominal16iP1001Table 4 - Reference Design Bill of MaterialsIRDCiP1001-A (For operation <4.5V IN )Designator Value Part TypeFootprint Mfr.Mfr. P/N C1, C3, C5100uFCapacitor, 6.3V, 20%, X5R1812TDK C4532X5R0J107MT C2, C4, C6, C7, C8, C9, C10, C15-Not Installed---C11, C12, C13, C14470uFCapacitor, 6.3V, 20%, Tantalum 7343Sanyo 6TPB470M C16, C190.100uF Capacitor, 50V, 10%, X7R 1206Novacap 1206B104K500N C17, C1810.0uF Capacitor, 16V, 10%, X5R 1210TDK C3225X5R1C106KT C20 1.00uF Capacitor, 10V, 10%, X7R 0805MuRata GRM40X7R105K010C2147.0pF Capacitor, 50V, 5%, C0G 1206MuRata GRM42-6C0G470J050AD140V Schottky Diode, 40V, 2.1AD-64International Rectifier 10MQ040NJP1, JP2, JP3-Test Point -Samtec TSW-102-07-LS JP1-1, JP2-1, JP3-1-Shunt-Samtec SNT-100-BKT L1 1.06uHInductor, 16A, 20%, Ferrite SMT Panasonic ETQP6F1R1BFA L222uH Inductor, 0.68A, 20%, FerriteSMT Sumida CR43-220R10:Resistor, 0:Jumper 2716Isotek Corp SMT-R000R2-For <2Vout, Not installed For >2Vout, Resistor, 0:Jumper SMT --R3-For <2Vout, Resistor, 0: Jumper For >2Vout see formula for valueSMT --R4-For <2Vout, Not installed For >2Vout recommend 1k :see formula for detailSMT --R5-For <2Vout, Resistor, 0: JumperFor >2Vout, Not installed 1206PanasonicERJ-8GEY0R00R60:Resistor, 0:Jumper 1206--R7340k :Resistor, 340k :, 1%340k : sets for 20A limit.See ILIM formula for other values1206ROHMMCR18EZHF3403R8100k :Resistor, 100k :, 5%1206ROHM MCR18EZHJ104R991k :Resistor, 91k :, 5%1206ROHM MCR18EZHJ913SW1-8-position DIP switchSMT C&K Components SD08H0SKTP1, TP3-Not Installed ---TP2, TP4, TP5-Test Point-Keystone1502-2U1-Power BlockSSBGA14mmx14mm International RectifieriP1001U2-IC, Step-Up DC-DC Converter, 0.5A8uMAX MaximMAX1675EUAIRDCiP1001-B (For operation 5V IN to 12V IN )DesignatorValuePart TypeFootprint Mfr.Mfr. P/NC1 C2 C3 C4 C5 C6 C7 C8 C9 C1010.0uF Capacitor, 25V, 10%, X5R 1812MuRata GRM43-2X5R106K25A C11 C12 C13 C14470uF Capacitor, 6.3V, 20%, Tantalum7343Sanyo 6TPB470M C160.100uFCapacitor, 50V, 10%, X7R1206Novacap1206B104K500NC15, C17, C18, C19, C20, C21-Not Installed---D140V Schottky Diode, 40V, 2.1AD-64International Rectifier10MQ040NJP1, JP2, JP3-Not Installed ---JP1-1, JP2-1, JP3-1-Not Installed---L1 1.06uH Inductor, 16A, 20%, FerriteSMT PanasonicETQP6F1R1BFAL2-Not Installed ---R10:Resistor, 0:Jumper 2716Isotek CorpSMT-R000R2-For <2Vout, Not installed For >2Vout, Resistor, 0:Jumper SMT --R3-For <2Vout, Resistor, 0: Jumper For >2Vout see formula for valueSMT --R4-For <2Vout, Not installed For >2Vout recommend 1k :see formula for detailSMT --R5-For <2Vout, Resistor, 0: JumperFor >2Vout, Not installed 1206PanasonicERJ-8GEY0R00R60:Resistor, 0:Jumper 1206--R7340k :Resistor, 340k :, 1%340k : sets for 20A limit.See ILIM formula for other values1206ROHM MCR18EZHF3403R8, R9-Not Installed ---SW1-8-position DIP switchSMT C&K ComponentsSD08H0SK TP1 TP2 TP4 TP5-Test Point -Keystone1502-2TP3-Not Installed---U1-Power Block SSBGA14mmx14mmInternational RectifieriP1001U2-Not Installed---17iP1001iPOWIR Technology products:AN-1028: Recommended Design, Integration and Rework Guidelines for International Rectifier’s iPOWIR Technology BGA PackagesThis paper discusses the assembly considerations that need to be taken when mounting iPOWIR BGA’s on printed circuit boards. This includes soldering, pick and place, reflow, inspection, cleaning and reworking recommendations.AN-1029: Optimizing a PCB Layout for an iPOWIR Technology DesignThis paper describes how to optimize the PCB layout design for both thermal and electrical performance.This includes placement, routing, and via interconnect suggestions.AN-1030: Applying iPOWIR Products in Your Thermal EnvironmentThis paper explains how to use the Power Loss and SOA curves in the data sheet to validate if theoperating conditions and thermal environment are within the Safe Operating Area of the iPOWIR product.。

RF1001T2D;中文规格书,Datasheet资料

200
100
0.01
10
0.001 0 100 200 300 400 500 600 700 800 900 100 110 120 0 0 0 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 0 50 100 150 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30
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2.8±0.2 0.1
(1) (2) (3)
15.0±0.4 0.2 13.5MIN
8.0±0.2
12.0±0.2
Construction Silicon epitaxial planar
1.3 0.8 (1) (2) (3)
5.0±0.2
0.7±0.1 0.05
8.0
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.05 - Rev.D
/
RF1001T2D
Electrical characteristics curves
10000 Ta=150 C 1 Ta=125C 0.1 Ta=75C Ta=-25C Ta=25C 1000
ELECTROSTATIC DISCHARGE TEST ESD(KV)
VR
VR
20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k
D=1/2
CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc)

SF1004G中文资料

50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr
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Байду номын сангаас1.0
1.2
1.4
元器件交易网
SF1001G THRU SF1008G
10.0 AMPS. Glass Passivated Super Fast Rectifiers
Voltage Range 50 to 600 Volts Current 10.0 Amperes
Features
Low forward voltage drop High current capability High reliability High surge current capability
~S
1
2
5
10
20
50
100
F1
00
30 10
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4G
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NUMBER OF CYCLES AT 60Hz
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG