AON6850;中文规格书,Datasheet资料

Symbol

t ≤ 10s Steady-State Steady-State

R θJC

Parameter

Typ Max Thermal Characteristics

Units Maximum Junction-to-Ambient A °C/W R θJA 206024=25°C unless otherwise noted Maximum Junction-to-Case

°C/W

°C/W Maximum Junction-to-Ambient A D 1.8722.2DFN5X6 EP2

G2

D2

Symbol

Min Typ Max Units BV DSS 100

V

V DS =100V, V GS =0V

10T J =55°C

50I GSS 100

nA V GS(th)Gate Threshold Voltage 2.5 3.4

4

V I D(ON)55

A 2735T J =125°C

46563242

m Ωg FS 15S V SD 0.7

1V I S

45

A C iss 1220

15301840pF C oss 108155202pF C rss 396693pF R g

0.30.7 1.1ΩQ g (10V)19

2429nC Q gs 7911nC Q gd 4.8

811.2nC t D(on)11ns t r 5.5ns t D(off)16ns t f 4

ns t rr 162330ns Q rr

58

83

108nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge I F =5A, dI/dt=500A/µs

Maximum Body-Diode Continuous Current

Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =50V, R L =9.8Ω, R GEN =3Ω

Gate resistance

V GS =0V, V DS =0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge V GS =10V, V DS =50V, I D =5A

Gate Source Charge Gate Drain Charge m ΩI S =1A,V GS =0V V DS =5V, I D =5A

V GS =7V, I D =4A

Forward Transconductance

Diode Forward Voltage R DS(ON)Static Drain-Source On-Resistance

I DSS µA V DS =V GS I D =250µA V DS =0V, V GS = ±25V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage On state drain current

I D =250µA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =5A

Reverse Transfer Capacitance I F =5A, dI/dt=500A/µs

V GS =0V, V DS =50V, f=1MHz SWITCHING PARAMETERS A. The value of R θJA is measured with the device mounted on 1in 2

FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The

Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.

B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.