BTA416Y-600C中文资料

1.Product profile1.1General descriptionPassivated, new generation, high commutation triacs in an internally insulated TO-220plastic package.1.2Features1.3Applications1.4Quick reference data2.Pinning informationBTA416Y series B and C16A Three-quadrant triacs,insulated,high commutation,high temperatureRev. 01 — 3 October 2007Product data sheetI Very high commutation performance I High immunity to dV/dtI Isolated mounting baseI 2500 V RMS isolation voltageI High operating junction temperatureI Heating and cooking appliancesI Non-linear rectifier-fed motor loads I High power motor control e.g. vacuum cleanersI Electronic thermostats for heating and cooling loadsI Solid-state relaysI V DRM ≤600V (BT A416Y -600B and C)I I GT ≤50mA (BTA416Y series B)I V DRM ≤800V (BT A416Y -800B and C)I I GT ≤35mA (BTA416Y series C)I I TSM ≤160A (t =20ms)I I T(RMS)≤16ATable 1.PinningPin Description Simplified outlineSymbol1main terminal 1 (T1)SOT78D (TO-220)2main terminal 2 (T2)3gate (G)mbmounting base; isolated12mb3sym051T1GT23.Ordering information4.Limiting values[1]Although not recommended,off-state voltages up to 800V may be applied without damage,but the triac may switch to the on-state.The rate of rise of current should not exceed 15A/µs.Table 2.Ordering informationType numberPackage NameDescriptionVersionBT A416Y -600B TO-220plastic single-ended package;isolated heatsink mounted;1mounting hole;3-lead TO-220SOT78D BT A416Y -600C BT A416Y -800B BT A416Y -800CTable 3.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditionsMin Max Unit V DRM repetitive peak off-state voltage BTA416Y -600B; BTA416Y -600C [1]-600V BTA416Y -800B; BTA416Y -800C -800V I T(RMS)RMS on-state currentfull sine wave; T mb ≤108°C; see Figure 4 and 5-16AI TSMnon-repetitive peak on-state currentfull sine wave; T j =25°C prior to surge; see Figure 2 and 3t = 20 ms -160A t = 16.7 ms-176A I 2t I 2t for fusingt = 10 ms-128A 2s dI T /dt rate of rise of on-state current I TM =20A; I G =0.2A;dI G /dt =0.2A/µs-100A/µs I GM peak gate current -2A P GM peak gate power -5W P G(AV)average gate power over any 20ms period -0.5W T stg storage temperature −40+150°C T jjunction temperature-150°Cα=conduction angleFig 1.Total power dissipation as a function of RMS on-state current; maximum valuesf =50HzFig 2.Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues003aab816048121620024681012141618I T(RMS) (A)P tot (W)α = 180°120°90°60°30°conduction angle (degrees)form factor a 30609012018042.82.21.91.57α003aab8170306090120150180110102103n (number of cycles)I TSM (A)I TSM tI TT j(init) = 25 °C max1/ft p ≤20ms (1)dI T /dt limitFig 3.Non-repetitive peak on-state current as a function of pulse duration; maximum valuesf =50Hz;T mb =108°CFig 4.RMS on-state current as a function of surgeduration; maximum values Fig 5.RMS on-state current as a function of mountingbase temperature; maximum values003aab8181010210310-510-410-310-210-1t p (s)I TSM (A)(1)I TSM tI TT j(init) = 25 °C maxt p003aab819010203040506010-210-11 10surge duration (s)I T(RMS)(A)003aab820048121620-50050100150T mb (°C)I T(RMS)(A)5.Thermal characteristics6.Isolation characteristicsTable 4.Thermal characteristics Symbol ParameterConditionsMin Typ Max Unit R th(j-mb)thermal resistance from junction to mounting basefull cycle; see Figure 6-- 1.9K/W R th(j-a)thermal resistance from junction to ambientin free air -60-K/WFig 6.Transient thermal impedance from junction to mounting base as a function of pulse duration003aab82110−110−2110Z th(j-mb)(K/W)10−3t p (s)10−511010−110−210−410−3t pPtTable 5.Isolation limiting values and characteristics T h = 25°C unless otherwise specified.Symbol ParameterConditionsMin Typ Max Unit V isol(RMS)RMS isolation voltage from all three terminals toexternal heatsink; f = 50 Hz to 60 Hz; sinusoidal waveform;RH ≤65%;clean and dust free --2500VC isolisolation capacitancefrom pin 2to external heatsink;f =1MHz-10-pF7.Static characteristics Table 6.Static characteristicsT j=25°C unless otherwise specified.Symbol Parameter Conditions BTA416Y-600BBTA416Y-800B BTA416Y-600CBTA416Y-800CUnitMin Typ Max Min Typ MaxI GT gate triggercurrent V D=12V; I T=0.1A; see Figure8T2+ G+2-502-35mA T2+ G−2-502-35mA T2− G−2-502-35mAI L latching current V D=12V; I GT=0.1A; see Figure10T2+ G+--60--50mAT2+ G−--90--60mAT2− G−--60--50mA I H holding current V D=12V; I GT=0.1A; see Figure11--60--35mA V T on-statevoltageI T=20A; see Figure9- 1.2 1.5- 1.2 1.5VV GT gate triggervoltage V D=12V; I T=0.1A; see Figure7-0.7 1.5-0.7 1.5V V D=400V; I T=0.1A; T j=150°C0.250.4-0.250.4-VI D off-state current V D=V DRM(max); T j=125°C-0.10.5-0.10.5mAV D=V DRM(max); T j=150°C-0.42-0.42mA8.Dynamic characteristicsTable 7.Dynamic characteristics SymbolParameterConditionsBTA416Y-600B BTA416Y-800B BTA416Y-600C BTA416Y-800C UnitMinTypMaxMinTypMaxdV D /dtrate of rise of off-state voltageV DM =0.67× V DRM(max); exponential waveform; gate open circuit T j =125°C 1000--500--V/µs T j =150°C600--300--V/µsdI com /dtrate of change of commutating current V DM =400V; I T(RMS)=16A; without snubber; gate open circuit T j =125°C15--10--A/ms T j =150°C6--4--A/ms t gtgate-controlled turn-on timeI TM =20A;V D =V DRM(max);I G =0.1A;dI G /dt =5A/µs-2--2-µs(1)T2− G −(2)T2+ G −(3)T2+ G+Fig 7.Normalized gate trigger voltage as a function ofjunction temperature Fig 8.Normalized gate trigger current as a function ofjunction temperatureT j (°C)−50150100500001aag1680.81.21.6V GT 0.4V GT(25°C)T j (°C)−50150100050001aag1651230(1)(2)(3)I GT I GT(25°C)V o =1.086V R s =0.017Ω(1)T j = 150°C; typical values (2)T j = 150°C; maximum values (3)T j = 25°C; maximum valuesFig 9.On-state current as a function of on-statevoltageFig 10.Normalized latching current as a function ofjunction temperatureFig 11.Normalized holding current as a function of junction temperature003aab822102030405000.51 1.52V T (V)I T (A)(1)(2)(3)T j (°C)−50150100050001aag1661230I L I L(25°C)T j (°C)−50150100050001aag1671230I H I H(25°C)9.Package outlineFig 12.Package outline SOT78D (3-lead TO-220)REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDEC JEITASOT78DTO-220SOT78D07-04-0407-07-10UNIT A mm4.74.31.401.250.90.60.60.416.015.26.510.39.73.00.2A 1DIMENSIONS (mm are the original dimensions)Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-2200510 mmscaleb c D D 1ref E e 2.54L 14.012.8L 1ref p 3.73.5Q 2.62.2q 3.02.7w b 21.721.32b 11.41.1cQA 1A mounting baseeew M pbb 2b 1D 1LDL 1qE 12310.Revision historyTable 8.Revision historyDocument ID Release date Data sheet status Change notice Supersedes BT A416Y_SER_B_C_120071003Product data sheet--BT A416Y_SER_B_C_1© NXP B.V . 2007. All rights reserved.Product data sheet Rev. 01 — 3 October 200711 of 1211.Legal information11.1Data sheet status[1]Please consult the most recently issued document before initiating or completing a design.[2]The term ‘short data sheet’ is explained in section “Definitions”.[3]The product status of device(s)described in this document may have changed since this document was published and may differ in case of multiple devices.The latest product status information is available on the Internet at URL .11.2DefinitionsDraft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequences of use of such information.Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s)and title.A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.11.3DisclaimersGeneral —Information in this document is believed to be accurate andreliable.However,NXP Semiconductors does not give any representations or warranties,expressed or implied,as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and without notice.This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use —NXP Semiconductors products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure ormalfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage.NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134)may cause permanent damage to the device.Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale,as published at /profile/terms , including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant,conveyance or implication of any license under any copyrights,patents or other industrial or intellectual property rights.11.4TrademarksNotice:All referenced brands,product names,service names and trademarks are the property of their respective owners.12.Contact informationFor additional information, please visit:For sales office addresses, send an email to:salesaddresses@Document status [1][2]Product status [3]DefinitionObjective [short] data sheet Development This document contains data from the objective specification for product development.Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.Product [short] data sheetProductionThis document contains the product specification.13.Contents1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 11.1General description. . . . . . . . . . . . . . . . . . . . . . 11.2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4Quick reference data. . . . . . . . . . . . . . . . . . . . . 12Pinning information. . . . . . . . . . . . . . . . . . . . . . 13Ordering information. . . . . . . . . . . . . . . . . . . . . 24Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 25Thermal characteristics. . . . . . . . . . . . . . . . . . . 56Isolation characteristics . . . . . . . . . . . . . . . . . . 57Static characteristics. . . . . . . . . . . . . . . . . . . . . 68Dynamic characteristics . . . . . . . . . . . . . . . . . . 79Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 910Revision history. . . . . . . . . . . . . . . . . . . . . . . . 1011Legal information. . . . . . . . . . . . . . . . . . . . . . . 1111.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . 1111.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1111.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 1111.4T rademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1112Contact information. . . . . . . . . . . . . . . . . . . . . 1113Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.© NXP B.V.2007.All rights reserved.For more information, please visit: For sales office addresses, please send an email to: salesaddresses@Date of release: 3 October 2007Document identifier: BTA416Y_SER_B_C_1。